| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 257425000 | Magnetic field detector using compound semiconductor material (e.g., GaAs, InSb, etc.) | 10 |
| 20100207222 | Hall Effect Element Having a Hall Plate with a Perimeter Having Indented Regions - A Hall effect element includes a Hall plate with an outer perimeter. The outer perimeter includes four corner regions, each tangential to two sides of a square outer boundary associated with the Hall plate, and each extending along two sides of the square outer boundary by a corner extent. The outer perimeter also includes four indented regions. Each one of the four indented regions deviates inward toward a center of the Hall plate. The Hall plate further includes a square core region centered with and smaller than the square outer boundary. A portion of each one of the four indented regions is tangential to a respective side of the square core region. Each side of the square core region has a length greater than twice the corner extent and less than a length of each side of the square outer boundary. | 08-19-2010 |
| 20130069186 | MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a magnetoresistive element comprises a first magnetic layer having a magnetization direction invariable and perpendicular to a film surface, a tunnel barrier layer formed on the first magnetic layer, and a second magnetic layer formed on the tunnel barrier layer and having a magnetization direction variable and perpendicular to the film surface. The first magnetic layer includes an interface layer formed on an upper side in contact with a lower portion of the tunnel barrier layer, and a main body layer formed on a lower side and serving as an origin of perpendicular magnetic anisotropy. The interface layer includes a first area provided on an inner side and having magnetization, and a second area provided on an outer side to surround the first area and having magnetization smaller than the magnetization of the first area or no magnetization. | 03-21-2013 |
| 20130187248 | MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY - The present invention makes it possible to inhibit an MR ratio from decreasing by high-temperature heat treatment in a magnetoresistive effect element using a perpendicular magnetization film. The magnetoresistive effect element includes a data storage layer, a data reference layer, and an MgO film interposed between the data storage layer and the data reference layer. The data storage layer includes a CoFeB film coming into contact with the MgO film, a perpendicular magnetization film, and a Ta film interposed between the CoFeB film and the perpendicular magnetization film. The CoFeB film is magnetically coupled to the perpendicular magnetization film through the Ta film. | 07-25-2013 |
| 20140084401 | MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY - A magnetoresistive element according to an embodiment includes a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, the first magnetic layer including a magnetic film of Mn | 03-27-2014 |
| 20140131824 | MAGNETORESISTIVE ELEMENT - According to one embodiment, a magnetoresistive element includes a recording layer having magnetic anisotropy perpendicular to a film surface and having a variable magnetization direction, a reference layer having magnetic anisotropy perpendicular to a film surface and having an invariable magnetization direction, an intermediate layer provided between the recording layer and the reference layer, and a underlayer containing AlTiN and provided on an opposite side of a surface of the recording layer on which the intermediate layer is provided. | 05-15-2014 |
| 20140145279 | MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY - The present invention relates to a magnetoresistive element including a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, a third magnetic layer. The first magnetic layer includes a magnetic film of Mn | 05-29-2014 |
| 20140159177 | MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY - A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including Mn | 06-12-2014 |
| 20140175582 | METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS HAVING ENGINEERED PERPENDICULAR MAGNETIC ANISOTROPY - A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a reference layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the reference layer and the free layer. The free layer has an engineered perpendicular magnetic anisotropy. The engineered PMA includes at least one of an insulating insertion layer induced PMA, a stress induced PMA, PMA due to interface symmetry breaking, and a lattice mismatch induced PMA. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. | 06-26-2014 |
| 20150338474 | INTEGRATED DUAL AXIS FLUXGATE SENSOR USING DOUBLE DEPOSITION OF MAGNETIC MATERIAL - A method of fabricating fluxgate devices to measure the magnetic field in two orthogonal, in plane directions, by using a composite-anisotropic magnetic core structure. | 11-26-2015 |
| 20160099407 | MULTILAYERED MAGNETIC THIN FILM STACK AND NONVOLATILE MEMORY DEVICE HAVING THE SAME - A multilayered magnetic thin-film stack including a tunneling barrier layer; a magnetic finned layer formed on a first surface of the tunneling barrier layer; and a magnetic free layer formed on a second surface of the tunneling barrier layer, which is opposite to the first surface, wherein at least one of the magnetic finned layer and the magnetic free layer includes a FeZr alloy layer and a first magnetic layer having a ( | 04-07-2016 |
