Class / Patent application number | Description | Number of patent applications / Date published |
257101000 | With particular dopant concentration or concentration profile (e.g., graded junction) | 40 |
20080217645 | Thick nitride semiconductor structures with interlayer structures and methods of fabricating thick nitride semiconductor structures - A semiconductor structure includes a substrate, a nucleation layer on the substrate, a compositionally graded layer on the nucleation layer, and a layer of a nitride semiconductor material on the compositionally graded layer. The layer of nitride semiconductor material includes a plurality of substantially relaxed nitride interlayers spaced apart within the layer of nitride semiconductor material. The substantially relaxed nitride interlayers include aluminum and gallium and are conductively doped with an n-type dopant, and the layer of nitride semiconductor material including the plurality of nitride interlayers has a total thickness of at least about 2.0 μm. | 09-11-2008 |
20080217646 | Nitride semiconductor light emitting device - The present invention presents a nitride semiconductor light emitting device including a substrate, a first n-type nitride semiconductor layer, a light emitting layer, a p-type nitride semiconductor layer, a p-type nitride semiconductor tunnel junction layer, an n-type nitride semiconductor tunnel junction layer, and a second n-type semiconductor layer, in which the p-type and n-type nitride semiconductor tunnel junction layers form a tunnel junction, at least one of the p-type and n-type nitride semiconductor tunnel junction layers contains In, at least one of In-containing layers contacts with a layer having a larger band gap than the In-containing layer, and at least one of shortest distances between an interface of the In-containing layer and the layer having a larger band gap and an interface of the p-type and n-type nitride semiconductor tunnel junction layers is less than 40 nm. | 09-11-2008 |
20080283864 | Single Crystal Phosphor Light Conversion Structures for Light Emitting Devices - Solid state light emitting devices include a solid state light emitting die and a light conversion structure. The light conversion structure may include a single crystal phosphor and may be on a light emitting surface of the solid state light emitting die. The light conversion structure may be attached to the light emitting surface of the solid state light emitting die via an adhesive layer. The light conversion structure may also be directly on a light emitting surface of the solid state light emitting die. Related methods are also disclosed. | 11-20-2008 |
20080315243 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - A group III nitride semiconductor light-emitting device comprises an n-type gallium nitride-based semiconductor layer, a first p-type Al | 12-25-2008 |
20080315244 | LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - Provided are a light emitting diode (LED) and a method for manufacturing the same. The LED includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The active layer includes a well layer and a barrier layer that are alternately laminated at least twice. The barrier layer has a thickness at least twice larger than a thickness of the well layer. | 12-25-2008 |
20080315245 | Nitride-based semiconductor substrate and semiconductor device - A nitride-based semiconductor substrate has a diameter of 25 mm or more, a thickness of 250 micrometers or more, a n-type carrier concentration of 1.2×10 | 12-25-2008 |
20090020780 | LIGHT EMITTING DIODE WITH IMPROVED STRUCTURE - Disclosed is a light emitting diode (LED) with an improved structure. The LED comprises an N-type semiconductor layer, a P-type semiconductor layer and an active layer interposed between the N-type and P-type semiconductor layers. The P-type compound semiconductor layer has a laminated structure comprising a P-type clad layer positioned on the active layer, a hole injection layer positioned on the P-type clad layer, and a P-type contact layer positioned on the hole injection layer. Accordingly, holes are more smoothly injected into the active layer from the P-type semiconductor layer, thereby improving the recombination rate of electrons and holes. | 01-22-2009 |
20090085054 | III-Nitride Semiconductor Light Emitting Device - The present disclosure relates to a III-nitride semiconductor light emitting device, and more particularly, to a III-nitride semiconductor light emitting device which can facilitate current spreading and improve electrostatic discharge characteristic by providing an undoped GaN layer with a thickness over 300 Å in an n-side contact layer. | 04-02-2009 |
20090152584 | LIGHT EMITTING DEVICE WITH BONDED INTERFACE - In some embodiments of the invention, a transparent substrate AlInGaP device includes an etch stop layer that may be less absorbing than a conventional etch stop layer. In some embodiments of the invention, a transparent substrate AlInGaP device includes a bonded interface that may be configured to give a lower forward voltage than a conventional bonded interface. Reducing the absorption and/or the forward voltage in a device may improve the efficiency of the device. | 06-18-2009 |
20090166666 | Semiconductor device - An exemplary semiconductor device is provided. The semiconductor device includes a semiconductor stacked layer and a conductive structure. The conductive structure is located on the semiconductor stacked layer. The conductive structure includes a bottom portion and a top portion on opposite sides thereof. The bottom portion is in contact with the semiconductor stacked layer. A ratio of a top width of the top portion to a bottom width of the bottom portion is less than 0.7. The conductive structure can be a conductive dot structure or a conductive line structure. | 07-02-2009 |
20090256172 | METHOD OF LASER ANNEALING SEMICONDUCTOR LAYER AND SEMICONDUCTOR DEVICES PRODUCED THEREBY - A laser annealing method includes forming a nitrogen-doped layer on a semiconductor layer, the nitrogen-doped layer having a nitrogen concentration of at least 3×10 | 10-15-2009 |
20090278163 | LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME - A light-emitting device ( | 11-12-2009 |
20090315067 | SEMICONDUCTOR DEVICE FABRICATION METHOD AND STRUCTURE THEREOF - A semiconductor device fabrication method is disclosed. A buffer layer is provided and a first semiconductor layer is formed on the buffer layer. Next, a first intermediate layer is formed on the first semiconductor layer by dopant with high concentration during an epitaxial process. A second semiconductor layer is overlaid on the first intermediate layer. A semiconductor light emitting device is grown on the second semiconductor layer. The formation of the intermediate layer and the second semiconductor layer is a set of steps. | 12-24-2009 |
20090321780 | GALLIUM NITRIDE-BASED LIGHT EMITTING DEVICE WITH ROUGHENED SURFACE AND FABRICATING METHOD THEREOF - A gallium nitride-based light emitting device with a roughened surface is described. The light emitting device comprises a substrate, a buffer layer grown on the substrate, an n-type III-nitride semiconductor layer grown on the buffer layer, a III-nitride semiconductor active layer grown on the n-type III-nitride semiconductor layer, a first p-type III-nitride semiconductor layer grown on the III-nitride semiconductor active layer, a heavily doped p-type III semiconductor layer grown on the first p-type III-nitride semiconductor, and a roughened second p-type III-nitride semiconductor layer grown on the heavily doped p-type III semiconductor layer. | 12-31-2009 |
20100001312 | Light-emitting device and method for manufacturing the same - A light-emitting device is disclosed. The light-emitting device comprises a substrate, wherein an ion implanted layer on the top surface of the substrate; a thin silicon film disposing on the ion implanted layer; and a light-emitting stack layer on the thin silicon film. This invention also discloses a method of manufacturing a light-emitting device comprising providing a substrate; forming an ion implanted layer on the top surface of the substrate; providing a light-emitting stack layer; forming a thin silicon film on the bottom surface of the light-emitting stack layer; and bonding the light-emitting stack layer to the substrate with the anodic bonding technique. | 01-07-2010 |
20100001313 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A light emitting device and a method of manufacturing the same are provided. The light emitting device comprises a first conductive type lower semiconductor layer, a current diffusion layer, a first conductive type upper semiconductor layer, an active layer, and a second conductive type semiconductor layer. The current diffusion layer is formed on the first conductive type lower semiconductor layer. The first conductive type upper semiconductor layer is formed on the current diffusion layer. The active layer is formed on the first conductive type upper semiconductor layer. The second conductive type semiconductor layer is formed on the active layer. | 01-07-2010 |
20100219445 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD FOR MANUFACTURING THE SAME, AND LAMP - A buffer layer | 09-02-2010 |
20100289056 | SEMICONDUCTOR LIGHT-EMITTING DEVICES - A semiconductor laser device comprises an n-type cladding layer, a p-type cladding layer, and an active layer which is sandwiched between the n-type cladding layer and the p-type cladding layer. The p-type cladding layer contains magnesium as a dopant impurity. Further, an n-type diffusion blocking layer of a nitride compound semiconductor material located between the active layer and the p-type cladding layer and is In | 11-18-2010 |
20110073902 | Semiconductor Body and Method of Producing a Semiconductor Body - A semiconductor body includes an n-conductive semiconductor layer and a p-conductive semiconductor layer. The p-conductive semiconductor layer contains a p-dopant and the n-conductive semiconductor layer an n-dopant and a further dopant. | 03-31-2011 |
20110147790 | Light Emitting Diode and Fabricating Method thereof - A light emitting diode and a fabricating method thereof are provided. The method including the steps of sequentially forming a first-type semiconductor layer, a light emitting layer and a second-type semiconductor layer with a first region and a second region on a substrate. Next, an ion implantation process is performed to make the resistance of the first region be larger than of the second region. Afterward, a first electrode is formed above the first region of the second-type semiconductor layer. Since the method uses the ion implantation process to make the inner resistance of the second-type semiconductor layer various, the light emitting intensity and efficiency may both be increased. | 06-23-2011 |
20120080715 | SEMICONDUCTOR DEVICE - A structure of semiconductor device includes a first semiconductor layer; an intermediate layer on a surface of said first semiconductor layer; a second semiconductor layer on said intermediate layer, wherein said intermediate layer and said second semiconductor layer are integrated to a set of sub-structures; and a semiconductor light emitting device on said second semiconductor layer. | 04-05-2012 |
20120119254 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM INCLUDING THE SAME - Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises a first conductive type first semiconductor layer, an active layer, a second conductive type second semiconductor layer, a reliability enhancement layer, and a second conductive type third semiconductor layer. The active layer is disposed on the first conductive type first semiconductor layer. The second conductive type second semiconductor layer is disposed on the active layer. The reliability enhancement layer is disposed on the second conductive type second semiconductor layer. The second conductive type third semiconductor layer is disposed on the reliability enhancement layer and comprises a light extraction pattern. The reliability enhancement layer and the active layer are spaced apart from each other by a distance of 0.3 μm to 5 μm. | 05-17-2012 |
20120313138 | OPTOELECTRONIC SEMICONDUCTOR CHIP AND USE OF AN INTERMEDIATE LAYER BASED ON AlGaN - An optoelectronic semiconductor chip includes an epitaxially grown semiconductor layer sequence based on GaN, InGaN, AlGaN and/or InAlGaN, a p-doped layer sequence, an n-doped layer sequence, an active zone that generates an electromagnetic radiation and is situated between the p-doped layer sequence and the n-doped layer sequence, and at least one AlxGa 1-xN-based intermediate layer where 012-13-2012 | |
20130026534 | SILICON LIGHT EMITTING DEVICE AND METHOD OF FABRICATING SAME - A light emitting device ( | 01-31-2013 |
20130099277 | SELECTIVE DRY ETCHING OF N-FACE (Al,In,Ga)N HETEROSTRUCTURES - A method of selective dry etching of N-face (Al,In,Ga)N heterostructures through the incorporation of an etch-stop layer into the structure, and a controlled, highly selective, etch process. Specifically, the method includes: (1) the incorporation of an easily formed, compatible etch-stop layer in the growth of the device structure, (2) the use of a laser-lift off or similar process to decouple the active layer from the original growth substrate, and (3) the achievement of etch selectivity higher than 14:1 on N-face (Al,In,Ga)N. | 04-25-2013 |
20130134475 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device is provided and includes an n-type semiconductor layer, a p-type semiconductor layer having a structure in which first and second doping regions including p-type impurities provided in different doping concentrations are alternately disposed one or more times; and an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer, wherein the p-type semiconductor layer includes at least one interface between the first and second doping regions to prevent diffusion of p-type impurities. | 05-30-2013 |
20130292737 | GaN-CRYSTAL FREE-STANDING SUBSTRATE AND METHOD FOR PRODUCING THE SAME - A GaN-crystal free-standing substrate obtained from a GaN crystal grown by HVPE with a (0001) plane serving as a crystal growth plane and at least one plane of a {10-11} plane and a {11-22} plane serving as a crystal growth plane that constitutes a facet crystal region, except for the side surface of the crystal, wherein the (0001)-plane-growth crystal region has a carbon concentration of 5×10 | 11-07-2013 |
20140167097 | OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method of fabricating an optoelectronic device comprising, providing a substrate, wherein the substrate comprises a first major surface and a second major surface opposite to the first major surface; forming a semiconductor epitaxial stack on the first major surface including a first conductive-type semiconductor layer having a first doping concentration, an active layer, and a second conductive-type semiconductor layer wherein the semiconductor epitaxial stack having four boundaries and a geometric center; and forming a plurality of the hollow components in the first conductive-type semiconductor layer wherein the plurality of the hollow components is formed from the boundary of the semiconductor epitaxial stack to the geometric center of the semiconductor epitaxial stack. | 06-19-2014 |
20140175506 | LED EPITAXIAL STRUCTURE - An LED epitaxial structure includes a substrate, a buffer layer and an epitaxial layer. The buffer layer is grown on a top surface of the substrate, and the epitaxial layer is formed on a surface of the buffer layer. The epitaxial layer has a first n-type epitaxial layer and a second n-type epitaxial layer. The first n-type epitaxial layer is formed between the buffer layer and the second n-type epitaxial layer. The first n-type epitaxial layer has a plurality of irregular holes therein. The first n-type epitaxial layer has a doping concentration which varies along a thickness direction of the first n-type epitaxial layer. | 06-26-2014 |
20140339598 | NITRIDE-BASED LIGHT-EMITTING ELEMENT COMPRISING A CARBON-DOPED P-TYPE NITRIDE LAYER - The present invention relates to a nitride-semiconductor light-emitting element in which a p-type nitride layer is doped with carbon, and to a production method therefor. More specifically, the present invention relates to a nitride-semiconductor light-emitting element comprising a p-type nitride layer formed from a nitride having a high concentration of free holes as the carbon is auto-doped in accordance with adjustment of the rate of flow of a nitrogen source. The nitride-semiconductor light-emitting element of the present invention can provide a high free-hole concentration, which is difficult to achieve with conventional single p-type dopants, and can therefore lower the resistance and increase the light efficiency of the light-emitting element. | 11-20-2014 |
20150115312 | GROUP III NITRIDE SEMICONDUCTOR DEVICE, AND METHOD FOR FABRICATING GROUP III NITRIDE SEMICONDUCTOR DEVICE - In a group III nitride semiconductor device according to one aspect of the present invention, in a p-type group III nitride semiconductor region formed on a semi-polar plane substrate, the concentration of hydrogen (H) contained in the p-type group III nitride semiconductor region is 25% or less of the concentration of a p-type dopant therein, and the concentration of oxygen contained in the p-type group III nitride semiconductor region is 5×10 | 04-30-2015 |
20150137173 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A nitride semiconductor light-emitting element including a high concentration silicon-doped layer doped with silicon at a high concentration of 2×10 | 05-21-2015 |
20160049543 | OPTOELECTRONIC COMPONENT AND METHOD OF PRODUCING AN OPTOELECTRONIC COMPONENT - An optoelectronic device includes a carrier on which a semiconductor layer sequence is applied, said semiconductor layer sequence including an n-doped semiconductor layer and a p-doped semiconductor layer such that a p-n junction is formed which includes an active zone that generates electromagnetic radiation, wherein at least one of the n-doped semiconductor layer and the p-doped semiconductor layer includes a doped region having a first doping concentration greater than a second doping concentration in a surrounding area of the region in the semiconductor layer including the region. | 02-18-2016 |
20160072012 | LIGHT-EMITTING DIODE - A light-emitting diode (LED) includes a first type semiconductor layer, a second type semiconductor layer, a current controlling structure, a first electrode, and a second electrode. The second type semiconductor layer is joined with the first type semiconductor layer. The current controlling structure is joined with the first type semiconductor layer, and the current controlling structure has at least one current-injecting zone therein. The first electrode is electrically coupled with the first type semiconductor layer through the current-injecting zone of the current controlling structure. The second electrode is electrically coupled with the second type semiconductor layer. | 03-10-2016 |
20160104816 | LIGHT EMITTING DEVICE AND METHOD FOR PREPARING THE SAME - Provided are a light-emitting element and a method for preparing same. The method includes a method for growing a p-type semiconductor layer having a low-concentration doping layer, an undoped layer and a high-concentration doping layer. During the growth of the low-concentration doping layer and the high-concentration doping layer, both N | 04-14-2016 |
20160126416 | OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING SAME - The invention relates to an optoelectronic device and to the method for manufacturing same. The optoelectronic device ( | 05-05-2016 |
20160163928 | NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - To realize a nitride semiconductor light-emitting element having excellent lifespan characteristics in addition to improved light emission efficiency compared with conventional elements. A nitride semiconductor light-emitting element having a light-emitting layer obtained by alternately stacking a well layer comprising a nitride semiconductor and a barrier layer comprising a nitride semiconductor between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, wherein a final barrier layer, which is the barrier layer formed at a position in contact with the p-type nitride semiconductor layer, contains n-type impurities, and the concentration of n-type impurities at the interface with the p-type nitride semiconductor layer is 4×10 | 06-09-2016 |
20160380155 | LIGHT EMITTING ELEMENT AND LIGHTING DEVICE COMPRISING SAME - The present disclosure provides a light emitting element, wherein each of first and second semiconductor layers has first and second pits disposed therein, wherein the first pit has a first depth and the second pit has a second depth smaller than the first depth, and the first and second pits are coupled to each other, wherein a density of the second pits in an upper portion of the second semiconductor layer is lower than a density of the second pits in an upper portion of the first semiconductor layer, wherein a density of the first pits in the upper portion of the second semiconductor layer is equal to a density of the first pits in the upper portion of the first semiconductor layer. | 12-29-2016 |
20180026158 | LIGHT-EMITTING DEVICE | 01-25-2018 |
20190148591 | LIGHT-EMITTING DEVICE | 05-16-2019 |