| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 257095000 | With contoured external surface (e.g., dome shape to facilitate light emission) | 35 |
| 20090014734 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes an active layer, an electrode formed above the active layer, a current spreading layer formed between the active layer and the electrode, having n-type conductivity, having a larger bandgap energy than the active layer, and spreading electrons injected from the electrode in the plane of the active layer, and a surface processed layer formed on the current spreading layer, having a larger bandgap energy than the active layer, and having an uneven surface region with a large number of concave-convex structures. The electrode is not formed on the uneven surface region. The conduction band edge energy from the Fermi level of the surface processed layer is higher than that of the current spreading layer. | 01-15-2009 |
| 20090159908 | SEMICONDUCTOR LIGHT EMITTING DEVICE WITH LIGHT EXTRACTION STRUCTURES - Structures are incorporated into a semiconductor light emitting device which may increase the extraction of light emitted at glancing incidence angles. In some embodiments, the device includes a low index material that directs light away from the metal contacts by total internal reflection. In some embodiments, the device includes extraction features such as cavities in the semiconductor structure which may extract glancing angle light directly, or direct the glancing angle light into smaller incidence angles which are more easily extracted from the device. | 06-25-2009 |
| 20090194775 | SEMICONDUCTOR LIGHT EMITTING DEVICES WITH HIGH COLOR RENDERING - A packaged light emitting device (LED) includes a light emitting diode configured to emit primary light having a peak wavelength that is less than about 465 nm and having a shoulder emission component at a wavelength that is greater than the peak wavelength, and a wavelength conversion material configured to receive the primary light emitted by the light emitting diode and to responsively emit light having a color point with a ccx greater than about 0.4 and a ccy less than about 0.6. | 08-06-2009 |
| 20090236621 | Low index spacer layer in LED devices - A light emitting diode (LED) device having a low index of refraction spacer layer separating the LED chip and a functional layer. The LED chip has a textured light emission surface to increase light extraction from the chip. The spacer layer has an index of refraction that is lower than both the LED chip and the functional layer. Most of the light generated in the LED chip passes easily into the spacer layer due to the textured surface of the chip. At the interface of the spacer layer and the functional layer the light sees a step-up in index of refraction which facilitates transmission. A portion of the light that has passed into the functional layer will be reflected or scattered back toward the spacer layer where some of it will experience total internal reflection. Total internal reflection at this interface may increase extraction efficiency by reducing the amount of light that re-enters the spacer layer and, ultimately, the LED chip where it may be absorbed. The spacer layer also provides a thermal buffer between the LED chip and the functional layer. Thus, the functional layer, which may be a wavelength conversion layer comprising phosphors, for example, is insulated from direct thermal transfer from the LED chip. The spacer layer can also function as a passivation layer. | 09-24-2009 |
| 20090261363 | Group-III Nitride Epitaxial Layer on Silicon Substrate - A semiconductor device includes a silicon substrate; silicon faceted structures formed on a top surface of the silicon substrate; and a group-III nitride layer over the silicon faceted structures. The silicon faceted structures are separated from each other, and have a repeated pattern. | 10-22-2009 |
| 20100006876 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE WITH SURFACE TEXTURE AND ITS MANUFACTURE - A nitride semiconductor light emitting device includes: a substrate for growing nitride semiconductor of a hexagonal crystal structure; a first nitride semiconductor layer of a first conductivity type formed above the substrate; an active layer formed on the first nitride semiconductor layer for emitting light when current flows; a second nitride semiconductor layer of a second conductivity type opposite to the first conductivity type formed on the active layer; texture formed above at least a partial area of the second nitride semiconductor layer and having a plurality of protrusions of a pyramid shape, each of the protrusions including a lower layer made of nitride semiconductor doped with impurities of the second conductivity type and an upper layer made of nitride semiconductor not intentionally doped with impurities; and a transparent electrode covering surfaces of the second nitride semiconductor layer and the texture. | 01-14-2010 |
| 20100072497 | LIGHT EMITTING DIODE CHIP - A light emitting diode chip includes a permanent substrate having a holding space formed on the permanent substrate; an insulating layer and a metal layer sequentially formed on the permanent substrate and the holding spacer; a die having a eutectic layer and a light-emitting region and bonded to the metal layer within the holding space via the eutectic layer coupling to the metal layer; a filler structure filled between the holding space and the die; and an electrode formed on the die and in contact with the light-emitting region. | 03-25-2010 |
| 20100090234 | LIGHT EMITTING DEVICE HAVING LIGHT EXTRACTION STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer. | 04-15-2010 |
| 20100163894 | Group III nitride-based compound semiconductor light-emitting device - In the Group III nitride-based compound semiconductor light-emitting device of the invention, an non-light-emitting area is formed in a light-emitting layer. In a light-emitting diode where light is extracted on the side of an n-layer, an outer wiring trace portion and an inner wiring trace portion of an n-contact electrode impedes light emission from the light-emitting layer. Therefore, there are provided, at the interface between a p-layer and a p-contact electrode, high-resistance faces having a width wider than the orthogonal projections of contact areas between the outer and inner wiring trace portions and the n-layer on the interface between the p-contact electrode and the p-layer. Through this configuration, current flow is limited, and portions having a total area equivalent to that of the high-resistance faces of the light-emitting layer serve as non-light-emitting areas. Thus, current can be supplied preferentially to an area of the light-emitting area where the outer wiring trace portion and the inner wiring trace portion are difficult to shade light, whereby light extraction efficiency with respect to supplied current can be enhanced. | 07-01-2010 |
| 20110057214 | EPITAXIAL WAFER, LIGHT-EMITTING ELEMENT, METHOD OF FABRICATING EPITAXIAL WAFER AND METHOD OF FABRICATING LIGHT-EMITTING ELEMENT - An epitaxial wafer, a light-emitting element, a method of fabricating the epitaxial wafer and a method of fabricating the light-emitting element, which have a high output and a low forward voltage, and can be fabricated without increasing fabricating cost, are provided. The epitaxial wafer is formed with a light-emitting portion, a reflective portion provided between a semiconductor substrate and the light-emitting portion and a current dispersing layer having first and second current dispersing layers, wherein the reflective portion has plural pairs of layers having first and second semiconductor layers wherein the first semiconductor layer has a thickness of T | 03-10-2011 |
| 20110062467 | LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A light emitting device according to the embodiment includes a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, a current spreading layer on the second conductive semiconductor layer, a bonding layer on the current spreading layer, and a light extracting structure on the bonding layer. | 03-17-2011 |
| 20110079800 | LIGHT EMITTING ELEMENT - A light emitting element according to an embodiment of the invention includes a semiconductor substrate, a light emitting part having a first conductivity type first cladding layer; a second conductivity type second cladding layer different from the first cladding layer in the conductivity type and an active layer sandwiched between the first cladding layer and the second cladding layer, a reflecting part for reflecting a light emitted from the active layer, disposed between the semiconductor substrate and the light emitting part so as to have a thickness of 1.7 μm to 8.0 μm and an electric current dispersing layer disposed on a side of the light emitting part opposite to the reflecting part, having a uneven part on the surface thereof, wherein the reflecting part is formed so as to have at least three pair layers formed of a first semiconductor layer and a second semiconductor layer different from the first semiconductor layer, the first semiconductor layer has a thickness T | 04-07-2011 |
| 20110133230 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed are a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises a substrate, in which concave-convex patterns are in at least a portion of a backside of the substrate, and a light emitting structure on the substrate and comprising a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer. | 06-09-2011 |
| 20110163335 | SHAPED CONTACT LAYER FOR LIGHT EMITTING HETEROSTRUCTURE - An improved light emitting heterostructure and/or device is provided, which includes a contact layer having a contact shape comprising one of: a clover shape with at least a third order axis of symmetry or an H-shape. The use of these shapes can provide one or more improved operating characteristics for the light emitting devices. The contact shapes can be used, for example, with contact layers on nitride-based devices that emit light having a wavelength in at least one of: the blue spectrum or the deep ultraviolet (UV) spectrum. | 07-07-2011 |
| 20120205691 | Controlling Pit Formation in a III-Nitride Device - A device includes a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region and a plurality of layer pairs disposed within one of the n-type region and the p-type region. Each layer pair includes an InGaN layer and pit-filling layer in direct contact with the InGaN layer. The pit-filling layer may fill in pits formed in the InGaN layer. | 08-16-2012 |
| 20130020596 | LUMINOUS DEVICES, PACKAGES AND SYSTEMS CONTAINING THE SAME, AND FABRICATING METHODS THEREOF - The present invention is directed to a vertical-type luminous device and high through-put methods of manufacturing the luminous device. These luminous devices can be utilized in a variety of luminous packages, which can be placed in luminous systems. The luminous devices are designed to maximize light emitting efficiency and/or thermal dissipation. Other improvements include an embedded zener diode to protect against harmful reverse bias voltages. | 01-24-2013 |
| 20130032836 | N-TYPE GALLIUM-NITRIDE LAYER HAVING MULTIPLE CONDUCTIVE INTERVENING LAYERS - A vertical GaN-based blue LED has an n-type layer comprising multiple conductive intervening layers. The n-type layer contains a plurality of periods. Each period of the n-type layer includes a gallium-nitride (GaN) sublayer and a thin conductive aluminum-gallium-nitride (AlGaN:Si) intervening sublayer. In one example, each GaN sublayer has a thickness substantially more than 100 nm and less than 1000 nm, and each AlGaN:Si intervening sublayer has a thickness less than 25 nm. The entire n-type layer is at least 2000 nm thick. The AlGaN:Si intervening layer provides compressive strain to the GaN sublayer thereby preventing cracking. After the epitaxial layers of the LED are formed, a conductive carrier is wafer bonded to the structure. The silicon substrate is then removed. Electrodes are added and the structure is singulated to form a finished LED device. Because the AlGaN:Si sublayers are conductive, the entire n-type layer can remain as part of the finished LED device. | 02-07-2013 |
| 20130228807 | METHOD OF SEPARATING NITRIDE FILMS FROM GROWTH SUBSTRATES BY SELECTIVE PHOTO-ENHANCED WET OXIDATION AND ASSOCIATED SEMICONDUCTOR STRUCTURE - Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a semiconductor structure may comprise: a first substrate structure; a III-nitride structure bonded with the first substrate structure; a plurality of air gaps formed between the first substrate structure and the III-nitride structure; and a III-oxide layer formed on surfaces around the air gaps, wherein a portion of the III-nitride structure including surfaces around the air gaps is transformed into the III-oxide layer by a selective photo-enhanced wet oxidation, and the III-oxide layer is formed between an untransformed portion of the III-nitride structure and the first substrate structure. | 09-05-2013 |
| 20130248901 | LIGHT-EMITTING DIODE COMPRISING DIELECTRIC MATERIAL LAYER AND MANUFACTURING METHOD THEREOF - Disclosed is a light-emitting diode with a semiconductor layer including dielectric material layer, and a manufacturing method thereof for increasing the external quantum efficiency. The semiconductor layer includes a non-flat structure having a plurality of recess regions, and at least one dielectric material layer disposed within each recess region, the dielectric material layer has a generally inverted pyramid shape or a ball shape, and a portion of the non-flat structure is exposed outside the dielectric material layer. Photons emitted from the active layer are scattered by the dielectric material layer as photon scattering structure, and are guided by the inclined internal side faces of the recess regions so that the probability of photons escaping from the light-emitting diode is increased, and thus total internal reflection is reduced, thereby increasing the extraction efficiency and hence the external quantum efficiency. | 09-26-2013 |
| 20130270589 | OPTOELECTRONIC DEVICE WITH NON-CONTINUOUS BACK CONTACTS - An optoelectronic device is disclosed. The optoelectronic device comprises a semiconductor structure; a plurality of contacts on the front side of the semiconductor structure; and a plurality of non-continuous metal contacts on a back side of the semiconductor structure. In an embodiment, a plurality of non-continuous back contacts on an optoelectronic device improve the reflectivity and reduce the losses associated with the back surface of the device. | 10-17-2013 |
| 20130313587 | LIGHT EMITTING ELEMENT AND LIGHT EMITTING MODULE THEREOF - A light emitting element including an epitaxy layer, at least one first electrode, at least one second electrode, a first bonding pad and a second bonding pad. The epitaxy layer includes in sequence a first semiconductor layer, an active layer and a second semiconductor layer, and the first semiconductor layer has an exposed portion exposed from the second semiconductor layer and the active layer. The first electrode is disposed at the exposed portion. The second electrode is disposed at the second semiconductor layer. The first bonding pad is connected with the first electrode. The second bonding pad is connected with the second electrode. Two light emitting elements with different structures and the light emitting module utilizing the light emitting elements mentioned above are also disclosed. | 11-28-2013 |
| 20140061694 | Method for Producing a Thin-Film Semiconductor Body and Thin-Film Semiconductor Body - A method for producing a thin-film semiconductor body is provided. A growth substrate is provided. A semiconductor layer with funnel-shaped and/or inverted pyramid-shaped recesses is epitaxially grown onto the growth substrate. The recesses are filled with a semiconductor material in such a way that pyramid-shaped outcoupling structures arise. A semiconductor layer sequence with an active layer is applied on the outcoupled structures. The active layer is suitable for generating electromagnetic radiation. A carrier is applied onto the semiconductor layer sequence. At least the semiconductor layer with the funnel-shaped and/or inverted pyramid-shaped recesses is detached, such that the pyramid-shaped outcoupling structures are configured as projections on a radiation exit face of the thin-film semiconductor body. | 03-06-2014 |
| 20140103376 | LIGHT-EMITTING DEVICE HAVING A PATTERNED SURFACE - The disclosure provides a light-emitting device. The light-emitting device comprises: a substrate having a first patterned unit; and a light-emitting stack on the substrate and having an active layer with a first surface; wherein the first patterned unit, protruding in a direction from the substrate to the light-emitting stack, has side surfaces abutting with each other and substantially non-parallel to the first surface in cross-sectional view, and has a non-polygon shape in top view. | 04-17-2014 |
| 20140124804 | HETERO-SUBSTRATE, NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE, AND METHOD FOR MANUFACTURING THE SAME - A hetero-substrate, a nitride-based semiconductor light emitting device, and a method of manufacturing the same are provided. The hetero-substrate may include a substrate including a silicon semiconductor, a buffer layer disposed on the substrate, a first semiconductor layer disposed on the buffer layer and including a nitride semiconductor, a second semiconductor layer disposed on the first semiconductor layer and including a first conductive type nitride semiconductor having a first doping concentration, and a stress control structure disposed between the first semiconductor layer and the second semiconductor layer and including at least one stress compensation layer and at least one third semiconductor layer including a first conductive type nitride semiconductor having a second doping concentration that is the same or lower than the first doping concentration. | 05-08-2014 |
| 20140124805 | METHOD FOR MANUFACTURING SUBSTRATE FOR SEMICONDUCTOR LIGHT EMITTING ELEMENT AND SEMICONDUCTOR LIGHT EMITTING ELEMENT USING THE SAME - A light emitting element having a recess-protrusion structure on a substrate is provided. A semiconductor light emitting element | 05-08-2014 |
| 20140159082 | LIGHT-EMITTING DEVICE - A light-emitting device including a substrate, a photoelectric structure and a coarse structure is provided. The substrate has an upper surface and a lower surface opposite to each other, and an annular side surface connecting the upper surface and the lower surface. The photoelectric structure is disposed on the upper surface of the substrate. The coarse structure is formed on the annular side surface of the substrate. A ratio of a thickness of the substrate and a thickness of the coarse structure is greater than or equal to 1 and less than or equal to 20. Therefore, the overall light-emitting efficiency of the light-emitting device may be improved. | 06-12-2014 |
| 20140167082 | GaN LEDs WITH IMPROVED AREA AND METHOD FOR MAKING THE SAME - Enlightening device and method for making the same are disclosed. Individual light emitting devices such as LEDs are separated to form individual dies by process in which a first narrow trench cuts the light emitting portion of the device and a second trench cuts the substrate to which the light emitting portion is attached. The first trench can be less than 10 μm. Hence, a semiconductor area that would normally be devoted to dicing streets on the wafer is substantially reduced thereby increasing the yield of devices. The devices generated by this method can also include base members that are electrically conducting as well as heat conducting in which the base member is directly bonded to the light emitting layers thereby providing improved heat conduction. | 06-19-2014 |
| 20140284637 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a method for manufacturing a semiconductor light emitting device includes performing plasma processing of a stacked body. The stacked body has a first semiconductor layer and a second semiconductor layer provided on the first semiconductor layer. The plasma processing is performed on a surface of the stacked body where the second semiconductor layer is exposed such that the second semiconductor layer remains. The first semiconductor layer includes gallium and nitrogen. The second semiconductor layer includes aluminum and nitrogen. The method includes forming a plurality of protrusions by performing wet etching of the surface after the plasma processing is performed. At least a lower portion of the plurality of protrusions is made of the first semiconductor layer. | 09-25-2014 |
| 20140299901 | LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF - A light-emitting diode, comprising: a substrate, the substrate comprising an upper surface, a bottom surface opposite to the upper surface, and a side surface; a first type semiconductor layer on the upper surface, wherein the first type semiconductor layer comprises a first portion and a second portion, and the second portion comprises an edge surrounding the first portion; a light-emitting layer on the first portion; and a second type semiconductor layer on the light-emitting layer, wherein the second portion comprising a first surface and a second surface, and a first distance is between the first surface and the upper surface, and a second distance is between the second surface and the upper surface and is smaller than the first distance; wherein the first surface is rougher than the second surface, and the second surface is located at the edge. | 10-09-2014 |
| 20140346541 | METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP AND OPTOELECTRONIC SEMICONDUCTOR CHIP - A method of producing an optoelectronic semiconductor chip includes providing a growth substrate, producing a III nitride nucleation layer on the growth substrate by sputtering, wherein a material of the growth substrate differs from a material of the nucleation layer, and growing a III nitride semiconductor layer sequence having an active layer onto the nucleation layer. | 11-27-2014 |
| 20140346542 | HIGH LIGHT EXTRACTION EFFICIENCY NITRIDE BASED LIGHT EMITTING DIODE BY SURFACE ROUGHENING - A III-nitride light emitting diode (LED) and method of fabricating the same, wherein at least one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured, thereby forming a textured surface in order to increase light extraction. The texturing may be performed by plasma assisted chemical etching, photolithography followed by etching, or nano-imprinting followed by etching. | 11-27-2014 |
| 20140353700 | HETEROJUNCTION LIGHT EMITTING DIODE - A method for forming a light emitting device includes forming a monocrystalline III-V emissive layer on a monocrystalline substrate and forming a first doped layer on the emissive layer. A first contact is deposited on the first doped layer. The monocrystalline substrate is removed from the emissive layer by a mechanical process. A second doped layer is formed on the emissive layer on a side from which the substrate has been removed. The second doped layer has a dopant conductivity opposite that of the first doped layer. A second contact is deposited on the second doped layer. | 12-04-2014 |
| 20150123152 | LIGHT-EMITTING ELEMENT - A light-emitting element includes a light-emitting stacked layer including an upper surface, wherein the upper surface includes a first flat region; a protective layer including a current blocking region on the first flat region; and a cap region on the upper surface, wherein the current blocking region is spatially separate from the cap region; and a first electrode covering the current blocking region. | 05-07-2015 |
| 20160013363 | LIGHT-EMITTING ELEMENT AND THE MANUFACTURING METHOD THEREOF | 01-14-2016 |
| 20160043157 | ORGANIC LIGHT EMITTING DISPLAY DEVICES AND METHODS OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY DEVICES - An organic light emitting display device may include a substrate having a pixel region and a transparent region, a first capacitor disposed in the transparent region of the substrate, a semiconductor device disposed in the pixel region of the substrate, a second capacitor disposed on the semiconductor device, and an organic light emitting structure disposed on the second capacitor. The organic light emitting display device may have a sufficient capacitance for components including the semiconductor device and the organic light emitting structure without increasing an area of the pixel region while maintaining a transmittance of the organic light emitting display device. | 02-11-2016 |
