Entries |
Document | Title | Date |
20080197357 | DISPLAY PANEL AND MANUFACTURING METHOD - A display panel includes a semiconductor layer formed on a substrate, a first insulating layer formed on the semiconductor layer, a gate line including a gate electrode and formed on the first insulating layer, a second insulating layer formed on the gate line, and a data line including a source electrode and a drain electrode formed on the second insulating layer. The second insulating layer covered with the drain electrode and the data line may be thicker than the second insulating layer not covered with the drain electrode and the data line. The data conductors are disposed on a higher interlayer insulating layer than the others such that diffused or migrating aluminum material is placed on the lower interlayer insulating layer to be prevented from being connected to the data conductors. | 08-21-2008 |
20080203395 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device and a method for manufacturing the same are provided. First, a transparent substrate is provided. Next, a light-shielding layer is formed over the transparent substrate and a first buffer layer is formed to cover the light-shielding layer. A semiconductor layer is formed over the first buffer layer. Then, the light-shielding layer, the first buffer layer and the semiconductor layer are patterned to form a laminate pattern. A channel and a source/drain region at two sides of the channel are formed within the semiconductor layer. Then, a gate insulating layer is formed over the transparent substrate to cover the laminate pattern. A gate electrode is formed on the gate insulating layer above the channel. | 08-28-2008 |
20080203396 | Electro-Optical Substrate, Method for Designing the Same, Electro-Optical Device, and Electronic Apparatus - An electro-optical substrate, including: a transparent substrate; a first light-shielding layer arranged on a first surface of the transparent substrate, in at least part of a region surrounding an opening in plan view; a first insulating layer arranged in a position facing the transparent substrate with the first light-shielding layer interposed therebetween, the first insulating layer having a refraction index n and a layer thickness t measured in nanometers, and covering at least part of the first light-shielding layer; a semiconductor layer, arranged in a position facing the transparent substrate, with the first light-shielding layer interposed therebetween, containing part of a thin film transistor, the thin film transistor including a channel region which is, in plan view, positioned within the first light-shielding layer, a corner edge of the first light-shielding layer and a corner edge of the channel region having a distance L | 08-28-2008 |
20080210947 | Solid-state imaging device - A solid-state imaging device having an arrangement in which well contact is achieved for each pixel is provided. In the solid-state imaging device, a well contact part is formed in an activation region of a photoelectric conversion portion. The well contact part fixes a well in which the photoelectric conversion portion and transistors of the pixel are provided at a predetermined potential. | 09-04-2008 |
20080224146 | Semiconductor Apparatus, Solid State Image Pickup Device Using the Same, and Method of Manufacturing Them - The invention provides a semiconductor apparatus provided with at least one set of buried channel type first conductive type MOS transistor and surface channel type first conductive type MOS transistor on the same substrate, in which a first conductive type impurity region is provided below a gate electrode of the buried channel type and surface channel type MOS transistors and between source drain regions. Further, the invention provides a solid state image pickup device having a photoelectric conversion portion and a pixel including a plurality of transistors formed in correspondence to the photoelectric conversion portion, in a substrate, wherein the plurality of transistors includes a buried channel type first conductive type MOS transistor and a surface channel type first conductive type MOS transistor, and a first conductive type impurity region is provided below a gate electrode of the buried channel type and surface channel type MOS transistors and between source drain regions. | 09-18-2008 |
20080224147 | THIN FILM TRANSISTOR, DISPLAY DEVICE USING THEREOF AND METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR AND THE DISPLAY DEVICE - A thin film transistor includes a gate electrode, a gate insulating film formed to cover the gate electrode, a semiconductor layer including a channel region formed over the gate electrode, a source electrode and a drain electrode including a region connected to the semiconductor layer, where at least a part of the region is overlapped with the gate electrode, an upper insulating film formed to cover the semiconductor layer, the source electrode and the drain electrode, where the upper insulating film is directly in contact with the channel region of the semiconductor layer and discharges moisture by a heat treatment and a second upper insulating film formed to cover the first protective film and suppress moisture out-diffusion. | 09-18-2008 |
20080246036 | Semiconductor Device, Television Set, and Method for Manufacturing The Same - An object of the invention is to provide a method for manufacturing a substrate having a film pattern such as an insulating film, a semiconductor film, or a conductive film with an easy process, and further, a semiconductor device and a television set having a high throughput or a high yield at low cost and a manufacturing method thereof. One feature of the invention is that a first film pattern is formed by a droplet discharge method, a photosensitive material is discharged or applied to the first film pattern, a mask pattern is formed by irradiating a region where the first film pattern and the photosensitive material are overlapped with a laser beam and by developing, and a second film pattern having a desired shape is formed by etching the first film pattern using the mask pattern as a mask. | 10-09-2008 |
20080246037 | Flat display device and method of manufacturing the same - Provided is a flat display device, and more particularly, an active matrix (AM) flat display device having a thin film transistor (TFT). The flat display device includes a substrate, a plurality of TFTs (thin film transistors) provided on the substrate, each TFT comprising an active layer, a source electrode and a drain electrode that contact the active layer, and an ohmic contact layer interposed between the active layer and the source and drain electrodes, and a light emitting device electrically connected to the TFT, wherein the ohmic contact layer and a layer including the source and drain electrodes are formed to have the same pattern. | 10-09-2008 |
20080246038 | DISPLAY DEVICE AND CONTROL METHOD OF THE SAME - A display device including a first gate line and a second gate line that extend in parallel with each other, a data line crossing the first and second gate lines to form a pixel region, a pixel electrode in the pixel region and including a main pixel electrode and a sub pixel electrode, which are connected to the first gate line and the data line, a control thin film transistor connected to the second gate line and the sub pixel electrode, and a gate driver. The gate driver outputs a first gate signal to the first gate line and a second gate signal to the second gate line. The first gate signal activates the first gate line during a first time and a second time following the first time, and the second gate signal activates the second gate line during the first time but not the second time. | 10-09-2008 |
20080246039 | Method for producing a semiconductor integrated circuit including a thin film transistor and a capacitor - The formation of contact holes and a capacitor is performed in a semiconductor integrated circuit such as an active matrix circuit. An interlayer insulator having a multilayer (a lower layer is silicon oxide; an upper layer is silicon nitride) each having different dry etching characteristic is formed. Using a first mask, the silicon nitride corresponding to the upper layer in the interlayer insulator is etched by dry etching. This etching is completed by using the silicon oxide corresponding to the lower layer as an etching stopper. A pattern is formed using a second mask to form selectively the silicon oxide corresponding to the lower layer. Thus a first portion that the silicon oxide and the silicon nitride are etched and a second portion that only silicon nitride is etched are obtained. The first portion is used as a contact hole. A capacitor is formed in the second portion. | 10-09-2008 |
20080251792 | Luminescent device and process of manufacturing the same - In the case where a material containing an alkaline metal or an alkaline-earth metal in a cathode, an anode, a buffer layer, or an organic compound layer is used, there is a fear of the diffusion of an impurity ion (representatively, alkaline metal ion or alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. | 10-16-2008 |
20080258148 | THIN FILM TRANSISTOR AND ORGANIC ELECTROLUMINESCENCE DISPLAY USING THE SAME - In a thin film transistor, a semiconductor layer containing Si and Ge is applied, a Ge concentration of this semiconductor layer is high at the side of the insulating substrate, and crystalline orientation of the semiconductor layer indicates a random orientation in a region of 20 nm from the side of the insulating substrate, and indicates a (111), (110) or (100) preferential orientation at the film surface side of the semiconductor layer. | 10-23-2008 |
20080258149 | LIQUID CRYSTAL DISPLAY AND PANEL THEREFOR - A thin film transistor array panel according to an embodiment of the present invention includes: a gate line; a data line intersecting the gate line; a thin film transistor connected to the gate line and the data line; a pixel electrode connected to the thin film transistor; and a shielding electrode electrically isolated from the data line, covering the data line at least in part, and having an aperture exposing the data line. | 10-23-2008 |
20080265257 | THIN FILM TRANSISTOR - Embodiments of a thin film transistor (TFT) are disclosed. | 10-30-2008 |
20080272375 | THIN FILM TRANSISTOR ARRAY PANEL, DISPLAY DEVICE INCLUDING THE PANEL, AND METHOD FOR MANUFACTURING THE DISPLAY DEVICE - A thin film transistor array panel, a display device including the thin film transistor array panel, and a method for manufacturing the display device. The thin film transistor array panel includes a substrate having first and second surfaces, a first thin film form formed on the first surface and including a first electrode, and a second thin film form formed on the second surface and including a second electrode, to thereby improve the viewing angle and contrast ratio of the display device. | 11-06-2008 |
20080272376 | Semiconductor Device and Method of Manufacturing the Same - In a semiconductor device having a substrate which has a metal surface, an insulating film which is formed on the substrate having the metal surface, and a pixel unit which is formed on the insulating film; the pixel unit includes a TFT, and wiring lines connected with the TFT, and a storage capacitor is constituted by the substrate ( | 11-06-2008 |
20080283842 | METHOD FOR MAKING SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR APPARATUS OBTAINED BY THE METHOD, METHOD FOR MAKING THIN FILM TRANSISTOR SUBSTRATE AND THIN FILM TRANSISTOR SUBSTRATE OBTAINED BY THE METHOD, AND METHOD FOR MAKING DISPLAY APPARATUS AND DISPLAY APPARATUS OBTAINED BY THE METHOD - A method for making a semiconductor apparatus including the steps of: forming a laminate structure of an insulating film made of a metal oxide and a semiconductor thin film on a substrate; forming a light absorption layer on top of the laminate structure; and irradiating an energy beam of a wavelength capable of being absorbed by the light absorption layer on the light absorption layer and simultaneously crystallizing the insulating film and the semiconductor thin film by means of heat generated in the light absorption layer. | 11-20-2008 |
20080283843 | DISPLAY DEVICE AND ELECTRONIC DEVICE USING THIN-FILM TRANSISTORS FORMED ON SEMICONDUCTOR THIN FILMS WHICH ARE CRYSTALLIZED ON INSULATING SUBSTRATES - A method of receiving video data, a control signal, etc. via a non-contact transmission path is adopted, and a receiving circuit for receiving and amplifying a signal is formed on the same insulating substrate as a display device. Thus, there are provided a thin-film transistor which is formed in a semiconductor thin film that is formed on the insulating substrate and crystallized in a predetermined direction, and an inductor for forming an inductive-coupling circuit, which is formed by using an electrically conductive thin film provided on the insulating substrate. The direction of movement of carriers flowing in the thin-film transistor is parallel to the direction of crystallization of the semiconductor thin film, and the inductor and the thin-film transistor are integrated so as to be electrically coupled directly or indirectly. | 11-20-2008 |
20080290345 | SEMICONDUCTOR DEVICE HAVING DISPLAY DEVICE - A semiconductor integrated circuit having a high withstand voltage TFT and a TFT which is capable of operating at high speed in a circuit of thin film transistors (TFT) and methods for fabricating such circuit will be provided. A gate insulating film of the TFT required to operate at high speed (e.g., TFT used for a logic circuit) is relatively thinned less than a gate insulating film of the TFT which is required to have high withstand voltage (e.g., TFT used for switching high voltage signals). | 11-27-2008 |
20080296582 | TFT-LCD ARRAY SUBSTRATE - A thin film transistor liquid crystal display (TFT-LCD) array substrate with a repairable pixel structure is provided. The array substrate comprises a gate line and a data line, and the gate line and the data line intersect with each other to define a pixel unit. The pixel unit comprises a TFT and a pixel electrode, and a spare source electrode, a spare drain electrode, and a spare channel region are formed alongside a channel region of the TFT to form a spare TFT. | 12-04-2008 |
20080296583 | Display Device And Manufacturing Method of The Same - A display device includes a capacitive element configured so that a portion of a semiconductor layer which is made conductive constitutes one electrode, an insulation film which covers the semiconductor layer constitutes a dielectric film, and a conductive layer which includes a portion which is formed over the insulation film and is overlapped to the one electrode constitutes another electrode. The conductive layer has an extension portion which extends outside of a region where the semiconductor layer is formed from the inside of the region where the semiconductor layer is formed, and is formed over the insulation film. The insulation film has, in a region where the insulation film is overlapped to both the semiconductor layer and the extension portion of the conductive layer, a film thickness which is larger than a film thickness at a portion thereof which is overlapped to the one electrode. | 12-04-2008 |
20080303029 | Structure, Semiconductor Device, Tft Driving Circuit, Panel, Display and Sensor for Maintaining Microstructure, Methods for Fabricating the Structure, the Semiconductor Device, the Tft Driving Circuit, the Panel, the Display and the Sensor - A method for fabricating a structure according to the present invention includes the steps of: forming a groove in a substrate, dropping a solution in which microstructures such as nanowires are dispersed into the groove and the step of evaporating the solution to arrange the microstructures in the groove in a self-organizing manner. | 12-11-2008 |
20080303030 | Display device and method of manufacturing the same - A semiconductor device includes an insulating substrate and a TFT element disposed on the substrate. The TFT element includes a gate electrode, a gate insulating film, a semiconductor layer, and a source electrode and a drain electrode arranged in that order on the insulating substrate. The semiconductor layer includes an active layer composed of polycrystalline semiconductor and a contact layer segment interposed between the active layer and the source electrode and another contact layer segment interposed between the active layer and the drain electrode. The source and drain electrodes each have a first face facing the opposite face of the active layer from the interface with the gate insulating layer and a second face facing an etched side face of the active layer. Each contact layer segment is disposed between the active layer and each of the first and second faces of the source or drain electrode. | 12-11-2008 |
20080308810 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - The invention relates to a semiconductor device and a method for manufacturing the semiconductor device, which includes: an insulating film over a substrate; a first pixel electrode embedded in the insulating film; an island-shaped single-crystal semiconductor layer over the insulating film; a gate insulating film and a gate electrode; an interlayer insulating film which covers the island-shaped single-crystal semiconductor layer and the gate electrode; a wiring which electrically connects a high-concentration impurity region and the first pixel electrode to each other; a partition which covers the interlayer insulating film, the island-shaped single-crystal semiconductor layer, and the gate electrode and has an opening in a region over the first pixel electrode; a light-emitting layer formed in a region which is over the pixel electrode and surrounded by the partition; and a second pixel electrode electrically connected to the light-emitting layer. A surface of the first pixel electrode, which is in contact with the light-emitting layer, is flat, and a surface where the insulating film is in contact with the island-shaped single-crystal semiconductor layer roughly coincides with a surface where the first pixel electrode is in contact with the light-emitting layer. | 12-18-2008 |
20080308811 | Display device - The present invention provides a display device having thin film transistors which can reduce an OFF current in spite of the extremely simple constitution. In the display device having thin film transistors on a substrate, each thin film transistor includes a gate electrode which is connected with a gate signal line, a semiconductor layer which is formed astride the gate electrode by way of an insulation film, a drain electrode which is connected with a drain signal line and is formed on the semiconductor layer, and a source electrode which is formed on the semiconductor layer in a state that the source electrode faces the drain electrode in an opposed manner, and a side of the drain electrode which faces the source electrode does not overlap the gate electrode as viewed in a plan view, and a side of the source electrode which faces the drain electrode does not overlap the gate electrode as viewed in a plan view. | 12-18-2008 |
20080315208 | Semiconductor device and manufacturing method thereof - [Problem] A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high. | 12-25-2008 |
20090001379 | SEMICONDUCTOR DEVICE - In a semiconductor device having a plurality of thin film transistors and matrix wiring lines formed on a substrate, the matrix wiring lines are electrically connected via resistors in order to prevent electrostatic destructions during a panel manufacture process and improve a manufacture yield. | 01-01-2009 |
20090001380 | THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE SAME AND METHOD OF FABRICATING THE SAME - A thin film transistor includes a substrate, a semiconductor layer disposed on the substrate, including a channel region and source and drain regions and crystallized using a metal catalyst, a gate electrode disposed to correspond to a predetermined region of the semiconductor layer, a gate insulating layer disposed between the gate electrode and the semiconductor layer to insulate the semiconductor layer from the gate electrode, and source and drain electrodes electrically connected to the source and drain regions of the semiconductor layer, respectively. The metal catalyst within 150 Å from a surface of the semiconductor layer in a vertical direction is formed to have a concentration exceeding 0 and not exceeding 6.5×E | 01-01-2009 |
20090014726 | ACTIVE DEVICE ARRAY SUBSTRATE - An active device array substrate including a substrate, a pixel array, pads, first switching devices, and second switching devices is provided. The pixel array is disposed on a display region of the substrate. The pads, the first and the second switching devices are disposed on a peripheral circuit region of the substrate. The pads and the pixel array are electrically connected. The first and the second switching devices are at the outside of the pads. Each first switching device is electrically connected to one of the pads and has a source, a drain, and a gate electrically connected to the source and the pad. Each second switching device is electrically connected to two adjacent first switching devices and has a gate, a source, and a drain. The source and the drain are electrically connected to the drain and the source of the adjacent first switching device, respectively. | 01-15-2009 |
20090014727 | THIN FILM ARRAY PANEL AND MANUFACTURING METHOD THEREOF - A thin film array panel is provided, which includes: a plurality of signal lines including contact parts for contact with an external device; a plurality of thin film transistors connected to the signal lines; an insulating layer formed on the signal lines and the thin film transistors; and a plurality of pixel electrodes formed on the insulating layer and connected to the thin film transistors, wherein the insulating layer includes a contact portion disposed on the contact parts of the signal lines and having a thickness smaller than other portions and the contact portion of the insulating layer includes an inclined portion having an inclination angle smaller than about 45 degrees. | 01-15-2009 |
20090020762 | DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - To achieve promotion of stability of operational function of display device and enlargement of design margin in circuit design, in a display device including a pixel portion having a semiconductor element and a plurality of pixels provided with pixel electrodes connected to the semiconductor element on a substrate, the semiconductor element includes a photosensitive organic resin film as an interlayer insulating film, an inner wall face of a first opening portion provided at the photosensitive organic resin film is covered by a second insulating nitride film, a second opening portion provided at an inorganic insulating film is provided on an inner side of the first opening portion, the semiconductor and a wiring are connected through the first opening portion and the second opening portion and the pixel electrode is provided at a layer on a lower side of an activation layer. | 01-22-2009 |
20090026461 | Semiconductor device including semiconductor circuit made from semiconductor element and manufacturing method thereof - In the present invention, a semiconductor film is formed through a sputtering method, and then, the semiconductor film is crystallized. After the crystallization, a patterning step is carried out to form an active layer with a desired shape. The present invention is also characterized by forming a semiconductor film through a sputtering method, subsequently forming an insulating film. Next, the semiconductor film is crystallized through the insulating film, so that a crystalline semiconductor film is formed. According this structure, it is possible to obtain a thin film transistor with a good electronic property and a high reliability in a safe processing environment. | 01-29-2009 |
20090026462 | WIRING SUBSTRATE AND METHOD OF MANUFACTURING SAME, AND DISPLAY DEVICE - A wiring substrate includes a plurality of lines provided on the substrate, and a plurality of mounting terminals each for respective one of the plurality of lines, the plurality of mounting terminals being arranged in several rows in a staggered pattern, wherein the mounting terminal includes a first conductive film formed in the same layer as the lines, an insulating film covering the lines and the first conductive film, the insulating film having an opening above the first conductive film, and an upper layer conducive film electrically connected to the first conductive film through the opening, and wherein the insulating film includes a thick film portion located on the outside of the area where the plurality of mounting terminals are arranged in several rows in the staggered pattern, and a thin film portion located in the area adjacent to the opening in the row direction of the staggered pattern with a thickness thinner than the thick film portion. | 01-29-2009 |
20090026463 | ARRAY SUBSTRATE FOR A DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An array substrate includes a thin-film transistor (TFT), a first insulation layer and a second insulation layer. The TFT is formed on the substrate. The TFT includes an active pattern, a gate metal pattern and a data metal pattern. The first insulation layer insulates the active pattern from the gate metal pattern. The second insulation layer is formed spaced apart by a predetermined width from at least one edge of the substrate. The second insulation layer insulates the gate metal pattern from the data metal pattern. Therefore, the second insulation layer is formed so that stress that is inflicted on a substrate may be decreased, thereby preventing deformation during a manufacturing process of the substrate. | 01-29-2009 |
20090026464 | Semiconductor device and manufacturing method thereof - A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high. | 01-29-2009 |
20090032819 | Array substrate for liquid crystal display device and method of fabricating the same - An array substrate for a liquid crystal display device, including: a substrate; a gate line on the substrate; a data line crossing the gate line to define a pixel region; a thin film transistor connected to the gate line and the data line, the thin film transistor including a gate electrode connected to the gate line, a semiconductor layer whose boundary is within the gate electrode, a source electrode connected to the data line and a drain electrode spaced apart from the source electrode; a passivation pattern covering the data line and the thin film transistor; and a pixel electrode extending from the drain electrode. | 02-05-2009 |
20090039353 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display device includes a substrate; a gate electrode disposed on the substrate, the gate electrode including a first portion of a metal oxide layer and a metal layer; a pixel electrode disposed on the substrate so as to be insulated from the gate electrode, the pixel electrode including a second portion of the metal oxide layer; a gate insulating layer disposed on the substrate to cover the gate electrode; a semiconductor layer disposed on the gate insulating layer, the semiconductor layer including a channel region corresponding to the gate electrode, and first and second regions disposed outside the channel region; a first electrode connected to the first region of the semiconductor layer; a second electrode connected to the second region of the semiconductor layer and the pixel electrode; an ohmic contact layer disposed between the first region of the semiconductor layer and the first electrode and between the second region of the semiconductor layer and the second electrode; a pixel defining layer disposed on the substrate to cover the first electrode, the second electrode, the semiconductor layer, and the pixel electrode, the pixel defining layer including an opening through which the pixel electrode is partially exposed; an organic light-emitting layer disposed on the pixel electrode exposed through the opening; and an opposite electrode covering the organic light-emitting layer. | 02-12-2009 |
20090039354 | TFT ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - Provided are a thin film transistor (TFT) array substrate and the method manufacturing thereof. The TFT array substrate comprising: a substrate, and a gate line and a data line formed on the substrate, the gate line and the data line being separated by a gate insulating layer therebetween and intersecting to define a pixel unit, the pixel unit at least including a TFT device and a pixel electrode. The data line and a source electrode of the thin film transistor device are formed as an integral structure, and an active layer is formed below both the data line and the source electrode of the thin film transistor device. | 02-12-2009 |
20090039355 | Display Device - A current pixel circuit of a display device includes a switching transistor which may be turned on in response to the current selection signal to transfer a data signal, a driving transistor for outputting a current corresponding to the data signal, and first and second transistors being turned on in response to the previous selection signal. In the display device, the gate electrodes of the switching transistor of a previous pixel and the first and second transistors of the current pixel are coupled to one scan line for transferring the previous selection signal. Accordingly, the transistors are arranged in the order of the switching transistor of the previous pixel and the first and second transistors of the current pixel on the scan line at an area between two adjacent data lines. | 02-12-2009 |
20090045407 | SOLID-STATE IMAGING DEVICE - Realized is a solid-state imaging device capable of achieving both a finer pixel size and high light receiving efficiency with an excellent image characteristic. A high concentration p-well layer ( | 02-19-2009 |
20090045408 | Display device - A display device includes a display panel which forms a plurality of sub pixels on a substrate thereof, and a drive circuit which is configured to drive the plurality of sub pixels, wherein the drive circuit has a thin film transistor formed on the substrate, and the thin film transistor has a semiconductor layer made of poly-silicon. The thin film transistor includes: a source electrode, a semiconductor layer and a drain electrode which are formed on the substrate; a gate insulation film which is formed on the source electrode, the semiconductor layer and the drain electrode; a gate electrode which is formed on the gate insulation film and above the semiconductor layer; an insulation film which is formed on the gate electrode; and a metal layer which is formed on the insulation film in a state that the metal layer covers at least a portion of the gate electrode. | 02-19-2009 |
20090045409 | Display device - A display device including both an n-channel thin film transistor and a p-channel thin film transistor each having excellent electric characteristics and high reliability is demonstrated, and a method for manufacturing thereof is also provided. The display device includes an inverted-staggered p-channel thin film transistor and an inverted-staggered n-channel thin film transistor in which a gate insulating film, a microcrystalline semiconductor film, and an amorphous semiconductor film are sequentially stacked over a gate electrode. The microcrystalline semiconductor film contains oxygen at a concentration of 1×10 | 02-19-2009 |
20090050893 | THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE SAME - A thin film transistor (TFT) includes a substrate, a semiconductor layer disposed on the substrate and crystallized using a metal catalyst, a gate insulating layer disposed on the semiconductor layer, a gate electrode disposed on the gate insulating layer, an interlayer insulating layer disposed on the gate electrode, and source and drain electrodes disposed on the interlayer insulating layer and electrically connected to source and drain regions of the semiconductor layer through contact holes exposing predetermined regions of the source and drain regions of the semiconductor layer formed within the gate insulating layer and the interlayer insulating layer. A metal silicide including a metal that is different from the metal catalyst is present within a region of the semiconductor layer under the contact hole from the surface of the semiconductor layer to a predetermined depth. | 02-26-2009 |
20090050894 | THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE HAING THE TFT, AND METHOD OF FABRICATING THE OLED DISPLAY DEVICE - A thin film transistor (TFT) includes a substrate, a semiconductor layer disposed on the substrate and including a channel region and source and drain regions, a gate electrode disposed in a position corresponding to the channel region of the semiconductor layer, a gate insulating layer interposed between the gate electrode and the semiconductor layer to electrically insulate the semiconductor layer from the gate electrode, a metal structure made up of metal layer, a metal silicide layer, or a double layer thereof disposed apart from the gate electrode over or under the semiconductor layer in a position corresponding to a region of the semiconductor layer other than a channel region, the structure being formed of the same material as the gate electrode, and source and drain electrodes electrically connected to the source and drain regions of the semiconductor layer. | 02-26-2009 |
20090050895 | SEMICONDUCTOR MANUFACTURING METHOD, SEMICONDUCTOR MANUFACTURING APPARATUS, AND DISPLAY UNIT - In a semiconductor manufacturing method that manufactures a coplanar type thin film transistor, a microcrystalline film | 02-26-2009 |
20090050896 | Display device - The present invention provides a display device which forms a drive circuit using a bottom-gate-type TFT made of poly-Si which generates a small leak current in a periphery of a display region. A gate electrode is made of Mo having a high melting point, and a gate insulation film is formed on the gate electrode. A channel layer constituted of a poly-Si layer is formed on the gate insulation film, and the poly-Si layer is covered with an a-Si layer. An n+ Si layer is formed on the a-Si layer, and an SD electrode is formed on the n+ Si layer. Although holes are induced in the poly-Si layer when a negative voltage (inverse bias) is applied to the gate electrode, the holes cannot pass through the a-Si layer and hence, no drain current flows. Accordingly, it is possible to realize a bottom-gate-type TFT using poly-silicon which generates a small leak current. | 02-26-2009 |
20090057682 | ACTIVE MATRIX SUBSTRATE, DISPLAY DEVICE, TELEVISION RECEIVER, MANUFACTURING METHOD OF ACTIVE MATRIX SUBSTRATE, FORMING METHOD OF GATE INSULATING FILM - In an active matrix substrate of the present invention, a gate insulating film for covering a gate electrode of each transistor has a thin portion, having a reduced film thickness, which is provided on a part overlapped on the gate electrode, and the thin portion is formed by using the gate electrode, on which the thin portion is overlapped, as a mask, and each transistor has a first drain electrode section and a second drain electrode section which are respectively provided on both sides of a source electrode, and the thin portion has two edges opposite to each other, and the first drain electrode section is overlapped on the one edge, and the second drain electrode section is overlapped on the other edge. This makes it possible to provide an active matrix substrate which realizes high display quality while suppressing unevenness of parasitic capacitances (particularly, Cgd) of TFTs in the active matrix substrate whose each TFT has a thin portion in its gate insulating film. | 03-05-2009 |
20090057683 | Semiconductor Device and Method of Manufacturing The Semiconductor Device - In a semiconductor device, a first interlayer insulating layer made of an inorganic material and formed on inverse stagger type TFTs, a second interlayer insulating layer made of an organic material and formed on the first interlayer insulating layer, and a pixel electrode formed in contact with the second interlayer insulating layer are disposed on a substrate, and an input terminal portion that is electrically connected to a wiring of another substrate is provided on an end portion of the substrate. The input terminal portion includes a first layer made of the same material as that of the gate electrode and a second layer made of the same material as that of the pixel electrode. With this structure, the number of photomasks used in the photolithography method can be reduced to 5. | 03-05-2009 |
20090065782 | FIELD SHIELD DIELECTRIC AS A MASK DURING SEMICONDUCTOR INK JET PRINTING - A display device and method for fabricating includes patterning a field shield dielectric layer to expose conductors and form a cavity over the conductors. InkJet printing a semiconductor material fills a portion of the cavity in contact with the conductors. An insulation material is deposited on the semiconductor material. A pixel pad is formed over the insulation material and the field shield dielectric layer. A pixel is formed which includes a thin film transistor with an ink jet printed semiconductor layer. | 03-12-2009 |
20090065783 | ELECTRO-OPTICAL DEVICE AND ELECTRONIC APPARATUS - An electro-optical device includes a semiconductor layer, a first insulating film, a second insulating film, and a gate electrode. The first insulating film is formed in an island shape so as to cover a first junction region of the semiconductor layer. The second insulating film is formed in an island shape so as to cover a second junction region of the semiconductor layer. The gate electrode faces the channel region through a gate insulating film and extends onto the first and second insulating films. | 03-12-2009 |
20090065784 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A display device including a thin film transistor with high electric characteristics and high reliability, and a method for manufacturing the display device in high yield are proposed. In a display device including a channel stop thin film transistor with an inverted-staggered structure, the channel stop thin film transistor with the inverted-staggered structure includes a microcrystalline semiconductor film including a channel formation region. An impurity region including an impurity element imparting one conductivity type is formed as selected in a region in the channel formation region of the microcrystalline semiconductor film which does not overlap with a source electrode or a drain electrode. In the channel formation region, a non-doped region, to which the impurity element imparting one conductivity type is not added, is formed between the impurity region, which is a doped region to which the impurity element is added, and the source region or the drain region. | 03-12-2009 |
20090072237 | METHOD FOR MANUFACTURING THIN FILM TRANSISTOR AND DISPLAY DEVICE INCLUDING THE THIN FILM TRANSISTOR - To provide a method for manufacturing a thin film transistor with excellent electric characteristics and high reliability and a display device including the thin film transistor. A gate insulating film is formed over a gate electrode, crystal nuclei is formed over the gate insulating film using fluorosilane and silane, and crystal growth is generated using the crystal nuclei as nuclei to form a microcrystalline semiconductor film, so that crystallinity at an interface between the gate insulating film and the microcrystalline semiconductor film is improved. Next, a thin film transistor is manufactured using the microcrystalline semiconductor film having crystallinity improved at the interface between the gate insulating film and the microcrystalline semiconductor film as a channel formation region. | 03-19-2009 |
20090072238 | INSULATED GATE FIELD EFFECT SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME - An LDD structure is manufactured to have a desired aspect ratio of the height to the width of a gate electrode. The gate electrode is first deposited on a semiconductor substrate followed by ion implantation with the gate electrode as a mask to form a pair of impurity regions. The gate electrode is then anodic oxidized to form an oxide film enclosing the electrode. With the oxide film as a mask, highly doped regions are formed by ion implantation in order to define lightly doped regions between the highly doped regions and the channel region located therebetween. | 03-19-2009 |
20090078941 | BACKPLANE STRUCTURES FOR SOLUTION PROCESSED ELECTRONIC DEVICES - There is provided a backplane for an organic electronic device. The backplane has a TFT substrate; a multiplicity of electrode structures; and a bank structure defining a multiplicity of pixel openings on the electrode structures. The bank structure has a height adjacent to the pixel opening, h | 03-26-2009 |
20090085038 | SUBSTRATE FOR DISPLAY DEVICE, MANUFACTURING METHOD FOR SAME AND DISPLAY DEVICE - The present invention provides the substrate for a display device, comprising a scan line, a signal line and a switching element on an insulating substrate, and further comprising an interlayer insulation film and a pixel electrode, the switching element is provided at an intersection of the scan line and the signal line, and have a gate electrode connected to the scan line, a source electrode connected to the signal line, and a drain electrode connected to the pixel electrode, the interlayer insulation film has a contact hole for connecting the drain electrode of the switching element to the pixel electrode, and a protective layer is provided above the scan line and/or the signal line in the substrate for a display device. | 04-02-2009 |
20090085039 | Image display system and fabrication method thereof - The invention provides a method for fabricating a low-temperature polysilicon (LTPS) driving circuit and thin film transistor. The method includes: providing a substrate, forming an active layer, forming a gate insulating layer, forming a dielectric layer having an extending portion and forming a gate electrode. The extending portion of the dielectric layer and the gate electrode are formed during the same step, and they can serve as a mask during a later doping process so that a lightly doped source/drain region and a source/drain region are formed during the same time without forming extra masks. | 04-02-2009 |
20090085040 | Liquid crystal display device and fabricating method thereof - A thin film transistor substrate and a fabricating method simplify a process and enlarge a capacitance value of a storage capacitor without any reduction of aperture ratio. A transparent first conductive layer and an opaque second conductive layer of a double-layer structured gate line are formed having a step coverage. A pixel electrode is provided on the gate insulating film within a pixel hole of said pixel area passing through the passivation film to be connected to the thin film transistor. A storage capacitor overlaps with the pixel electrode with having the gate insulating film therebetween and has a lower storage electrode protruded from the first conductive layer. | 04-02-2009 |
20090085041 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - A method of manufacturing a thin film transistor array panel is provided, which includes: forming a thin film transistor including a gate electrode, a drain electrode, a source electrode and a semiconductor on a substrate; forming a first passivation layer on the drain and the source electrodes; forming a transparent conductive layer on the first passivation layer; etching the transparent conductive layer using a photoresist as an etch mask to expose the portion of the first passivation layer and to form a pixel electrode connected the drain electrode; ashing the first passivation layer and the photoresist; and removing the photoresist. | 04-02-2009 |
20090101913 | APPARATUS AND METHOD FOR REDUCING PHOTO LEAKAGE CURRENT FOR TFT LCD - A method of forming a thin film transistor (TFT) array panel, comprising the steps of: (i) forming a patterned first conductive layer, which includes a gate line and a shielding portion, on a substrate, (ii) forming a gate insulating layer on the patterned first conductive layer and the substrate, (iii) forming a patterned semiconductor layer on the gate insulating layer, (iv) forming a patterned second conductive layer, which includes a source electrode, and a drain electrode on the patterned semiconductor layer, and a data line that is electrically connected to the source electrode, (v) forming a patterned passivation layer on the patterned second conductive layer and the substrate, and (vi) forming a patterned transparent conductive layer on the patterned passivation layer. | 04-23-2009 |
20090101914 | Semiconductor Image Sensing Device - A signal charge corresponding to an incident light quantity is accumulated in a first node of each pixel circuit. An accumulated charge exhaust circuit includes each of first nodes of the plurality of pixel circuits belonging to the same pixel group, and a second node connected through discharge gates functioning as variable resistance elements. Second node functions as a floating drain during an ON period of a control switch, while accumulating the signal charge overflowing from each pixel circuit, in a capacitor during an OFF period of control switch provided at an intermediate timing in one frame period. When the incident light to the pixel group is intense, a resistance value of each discharge gate is lowered in response to an increase of the signal charge accumulated in capacitor, so that the signal charge accumulated in each pixel circuit can be exhausted once at the above intermediate timing. | 04-23-2009 |
20090101915 | PHOTO SENSOR AND FABRICATION METHOD THEREOF - A photo sensor includes a patterned shielding conductive layer disposed on a transparent substrate, and a buffer dielectric layer, a patterned semiconductor layer, and a dielectric layer disposed on the patterned shielding layer in order. The patterned semiconductor layer includes an intrinsic region, a first doped region, and a second doped region, wherein the first and second doped regions are positioned at two sides of the intrinsic region separately. A patterned transparent conductive layer is disposed on the dielectric layer and covers the boundary of the intrinsic region and the first doped region and the boundary of the intrinsic region and the second doped region. The patterned transparent conductive layer is electrically connected to the patterned shielding conductive layer. | 04-23-2009 |
20090101916 | MICROCRYSTALLINE SEMICONDUCTOR FILM, THIN FILM TRANSISTOR, AND DISPLAY DEVICE INCLUDING THIN FILM TRANSISTOR - A thin film transistor with excellent electric characteristics and a display device having the thin film transistor are proposed. The thin film transistor includes a gate insulating film formed over a gate electrode; a microcrystalline semiconductor film including an impurity element which serves as a donor, formed over the gate insulating film; a buffer layer formed over the microcrystalline semiconductor film; a pair of semiconductor films to which an impurity element imparting one conductivity type is added, formed over the buffer layer; and wirings formed over the pair of semiconductor films. The concentration of the impurity element which serves as a donor in the microcrystalline semiconductor film is decreased from the gate insulating film side toward the buffer layer, and the buffer layer does not include the impurity element which serves as a donor at a higher concentration than the detection limit of SIMS. | 04-23-2009 |
20090101917 | THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY APPARATUS HAVING THE SAME - A TFT substrate with reduced pixel defect rate is presented. The TFT substrate includes a pixel electrode, a negative line to apply a reverse voltage to the pixel electrode, and a recovery transistor including a drain electrode overlapping a part of the negative line with a insulating layer disposed between the negative line and the drain electrode. A contact hole is formed on the negative line and the drain electrode, and a bridge electrode connects the negative line and the drain electrode through the contact hole. | 04-23-2009 |
20090114921 | THIN FILM TRANSISTOR, AND DISPLAY DEVICE HAVING THE THIN FILM TRANSISTOR - The thin film transistor includes a gate insulating film formed over a gate electrode; a microcrystalline semiconductor film including an impurity element which serves as a donor, formed over the gate insulating film; a pair of buffer layers formed over the microcrystalline semiconductor film; a pair of semiconductor films to which an impurity element imparting one conductivity type is added, formed over the pair of buffer layers; and wirings formed over the pair of semiconductor films to which an impurity element imparting one conductivity type is added. The concentration of the impurity element which serves as a donor in the microcrystalline semiconductor film is decreased from the gate insulating film side toward the buffer layers, and the buffer layers do not include the impurity element which serves as a donor at a higher concentration than the detection limit of SIMS. | 05-07-2009 |
20090114922 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME, LIQUID CRYSTAL TELEVISION, AND EL TELEVISION - An object of the present invention is to provide a method for manufacturing a semiconductor device having a semiconductor element capable of reducing a cost and improving a throughput with a minute structure, and further, a method for manufacturing a liquid crystal television and an EL television. According to one feature of the invention, a method for manufacturing a semiconductor device comprises the steps of: forming a light absorption layer over a substrate, forming a first region over the light absorption layer by using a solution, generating heat by irradiating the light absorption layer with laser light, and forming a first film pattern by heating the first region with the heat. | 05-07-2009 |
20090121232 | ARRAY SUBSTRATE, METHOD FOR MANUFACTURING THE SAME AND DISPLAY PANEL HAVING THE SAME - An array substrate, a method for manufacturing the array substrate and a display panel having the array substrate are presented. The method includes forming a thin-film transistor (TFT) on a base substrate. A passivation layer covers the TFT. A color filter layer is formed on the passivation layer. An organic protective layer is formed on the color filter layer, and has a type of photoresist that is substantially the same as that of the color filter layer. A contact hole is formed through the organic protective layer, the color filter layer and the passivation layer, partially exposing the TFT. A pixel electrode is formed on the organic protective layer to be electrically connected to a portion of the TFT. The contact hole may be formed through the organic protective layer, the color filter layer and the passivation layer by a single photolithography process, simplifying the array substrate manufacturing process. | 05-14-2009 |
20090121233 | ELECTRO-OPTICAL DEVICE AND ELECTRONIC APPARATUS - An electro-optical device includes a semiconductor layer, a gate electrode, and a first insulating film, and a second insulating under the semiconductor layer. The first insulating film overlaps a junction region, but not a channel region, of the semiconductor layer. The gate electrode includes a first extended portion that continuously covers an upper and side face and of the first insulating film at the junction region. The gate electrode includes a second extended portion that overlaps and fills a groove in the second insulating that extends along at least the junction region. | 05-14-2009 |
20090121234 | Liquid crystal display device and fabrication method thereof - A liquid crystal display device including a gate electrode and a gate line formed on a first substrate, a first insulating layer formed on the first substrate, an active pattern, an ohmic-contact layer, and a diffusion preventing layer formed on the gate electrode, a data line to cross source and drain electrodes and the gate line formed on the diffusion preventing layer to define a pixel area, a second insulating layer formed on the first substrate, a contact hole formed by removing a portion of the second insulating layer and exposing a portion of the drain electrode, a pixel electrode electrically connected with the drain electrode via the contact hole, and a second substrate attached with the first substrate in a facing manner, wherein the diffusion preventing layer comprises a metal tip protruded to the side of the source and drain electrodes. | 05-14-2009 |
20090127563 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - According to an embodiment, the method of manufacturing a thin film transistor array panel includes forming a gate wire, a data wire, and a thin film transistor on a substrate and depositing an organic material layer on the gate wire, the data wire, and the thin film transistor. The method further includes forming an optical pattern on the upper surface of the organic material layer, depositing a reflecting electrode layer on the organic material layer, etching the reflecting electrode layer, etching the organic material layer after etching the reflecting electrode layer, and forming a pixel electrode on the reflecting electrode layer. Accordingly, the optical pattern on the upper surface of organic material may be transcribed to the reflecting electrode layer without damage and with clarity. | 05-21-2009 |
20090134396 | SEMICONDUCTOR RANGE-FINDING ELEMENT AND SOLID-STATE IMAGING DEVICE - To transfer signal charges generated by a semiconductor photoelectric conversion element in opposite directions, the center line of a first transfer gate electrode and that of a second transfer gate electrodes are arranged on the same straight line, and a U-shaped first exhausting gate electrode and a second exhausting gate electrode are arranged to oppose to each other. The first exhausting gate electrode exhausts background charges generated by a background light in the charge generation region, and the second exhausting gate electrode exhausts background charges generated by the background light in the charge generation region. The background charges exhausted by the first exhausting gate electrode are received by a first exhausting drain region and the background charges exhausted by the second exhausting gate electrode are received by a first exhausting drain region. | 05-28-2009 |
20090134397 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND ELECTRONIC APPLIANCE - A non-single-crystal semiconductor layer is formed over a substrate, and then a single crystal semiconductor layer is formed over part of the non-single-crystal semiconductor layer. Thus, a semiconductor element of a region which requires a large area (e.g. a pixel region in a display device) can be formed using the non-single-crystal semiconductor layer, and a semiconductor element of a region which requires high speed operation (e.g. a driver circuit region in a display device) can be formed using the single crystal semiconductor layer. | 05-28-2009 |
20090134398 | Array substrate for liquid crystal display device - An array substrate for an LCD device and a method of fabricating the same are disclosed. The array substrate includes: a substrate defining a display area and a non-display area; an n-type driving TFT and a p-type driving TFT in the non-display area; a switching TFT in the display region; a storage capacitor in the display region, the storage capacitor including first to third storage layers sequentially layered with intervening insulating layers, wherein the first storage layer contacts a first semiconductor layer under the first storage layer; and a pixel electrode in the display region, the pixel electrode connected to the switching TFT. | 05-28-2009 |
20090134399 | Semiconductor Device and Method for Manufacturing the Same - A manufacturing method of an active matrix light emitting device in which the active matrix light emitting device can be manufactured in a shorter time with high yield at low cost compared with conventional ones will be provided. It is a feature of the present invention that a layered structure is employed for a metal electrode which is formed in contact with or is electrically connected to a semiconductor layer of each TFT arranged in a pixel area of an active matrix light emitting device. Further, the metal electrode is partially etched and used as a first electrode of a light emitting element. A buffer layer, a layer containing an organic compound, and a second electrode layer are stacked over the first electrode. | 05-28-2009 |
20090134400 | LTPS-LCD Structure and Method for Manufacturing the Same - An LTPS-LCD structure and a method for manufacturing the structure are provided. The structure comprises a substrate where a plurality of pixels are formed thereon. Each of these pixels comprises a control area, a capacitance area, and a display area. The structure is initially formed with a transparent electrode on the substrate, followed by a control device, a capacitance storage device. The display unit is then formed on the control area, the capacitance area, and the display area, respectively. As a result, the capacitance of the structure can be enhanced and the manufacturing processes of masks can be reduced. | 05-28-2009 |
20090134401 | Thin Film Transistor and Display Device, Method for Manufacturing the Same, and Television System - The present invention provides a technique by which a component forming a display device, such as a wiring can be formed with good adhesion. | 05-28-2009 |
20090140260 | Liquid crystal display device and fabricating method thereof - A method for fabricating a liquid crystal display (LCD) device comprises forming an active pattern and a data line on a substrate, the active pattern including a source, a drain, and a channel regions; a first insulation film on a portion of the substrate; forming a gate electrode in a portion of the active pattern where the first insulation film is formed; a second insulation film on the substrate; forming a plurality of first contact holes exposing a portion of the source and drain regions and a second contact hole exposing a portion of the data line; forming a source electrode from a transparent conductive material connected to a source region within the respective first contact hole and a data line within the second contact hole; and forming a pixel and a drain electrodes from the transparent conductive material connected to a drain region within the respective first contact hole. | 06-04-2009 |
20090140261 | MOS SOLID-STATE IMAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - A sidewall film | 06-04-2009 |
20090146152 | Thin film transistor array panel and method for manufacturing the same - A thin film transistor array panel and a method of its manufacture are presented. The thin film transistor array panel according to an embodiment includes a substrate, a gate line extending in a first direction on the substrate, a data line extending in a second direction on the substrate and intersecting and insulated from the gate line, a thin film transistor including a control terminal connected to the gate line, an input terminal connected to the data line and an output terminal, a color filter formed on the thin film transistor, a light blocking member formed on the thin film transistor, defining the space for storing the color filter, and including a first protection portion surrounding at least the region of the output terminal of the thin film transistor, and a pixel electrode formed on the light blocking member and the color filter and contacting the region of the output terminal surrounded by the first protection portion of the light blocking member. | 06-11-2009 |
20090146153 | PIXEL WITH STRAINED SILICON LAYER FOR IMPROVING CARRIER MOBILITY AND BLUE RESPONSE IN IMAGERS - An imager having a pixel cell having an associated strained silicon layer. The strained silicon layer increases charge transfer efficiency, decreases image lag, and improves blue response in imaging devices. | 06-11-2009 |
20090152560 | Method for fabricating thin film transistor array substrate and thin film transistor array substrate - After forming a gate electrode ( | 06-18-2009 |
20090152561 | ORGANIC THIN FILM TRANSISTOR DISPLAY SUBSTRATE, METHOD OF FABRICATING THE SAME, AND DISPLAY APPARATUS HAVING THE SAME - In an organic thin film transistor display substrate, a thin film transistor and a pixel electrode electrically connected to the thin film transistor are formed on an array substrate in which a plurality of pixel areas is defined. Also, color filters are formed in the pixel areas. Each color filter is provided with an opening formed therethrough and an active pattern of thin film transistor is received into the opening. Since the active pattern is formed on the array substrate through an inkjet method, the color filter may receive the active pattern therein in lieu of a bank pattern, thereby simplifying the structure of the organic thin film transistor display substrate and improving its productivity. | 06-18-2009 |
20090152562 | Liquid crystal display device and fabricating method thereof - A method of fabricating a liquid crystal display device includes forming first, second, and third active patterns on a substrate having a pixel region and a driving region, wherein the first and second active patterns are in the driving region and the third active pattern is in the pixel region, the first, second, and third active patterns each having an active region, a source region, and a drain region with the source and drain regions on opposing sides of the active region, forming a gate insulator on the first, second, and third active patterns, forming first, second, and third gate electrodes on the gate insulator, wherein the first, second, and third gate electrodes correspond to the active regions of the first, second, and third active patterns, respectively, doping the source and drain regions of the first, second, and third active patterns with n− ions using the first, second, and third gate electrodes as a doping mask, doping the n− doped source and drain regions of the second active pattern with p+ ions, forming an interlayer insulating film on the first, second, and third gate electrodes and patterning the interlayer insulating film to form contact holes exposing each source and drain regions of the first, second, and third active patterns, and doping the source and drain regions of the first, second, and third active patterns with n+ ions through the contact holes. | 06-18-2009 |
20090152563 | PHOTO-SENSOR AND MANUFACTURING METHOD FOR PHOTO-SENSOR - The present invention prevents disconnection of a source electrode and a drain electrode, taking account of adhesion with amorphous silicon. A photo-sensor according to the present invention is a photo-sensor having a TFT array substrate that has an element region in which thin film transistors are arranged in an array, the photo-sensor comprising a passivation film which is provided above the thin film transistor and in which a contact hole is formed, and a photo-diode which is connected to a drain electrode of the thin film transistor via the contact hole, wherein the passivation film and a gate insulation film are removed in the peripheral area outside the element region of the TFT array substrate, and the edge of the passivation film in the peripheral area is formed at the same position as the edge of the gate insulation film on the periphery of the substrate, or outside the edge of the gate insulation film. | 06-18-2009 |
20090152564 | THIN FILM TRANSISTOR ARRAY SUBSTRATE - A thin film transistor array substrate includes an insulating substrate, a plurality of scan lines, an insulating layer, a plurality of data lines, and a plurality of pixels arranged in an array of rows and columns. The pixels in each row are aligned in a row direction, the pixels in each column are aligned in a column direction, and the pixels are separated from each other by the scan lines and the data lines. Each pixel includes a thin film transistor and a pixel electrode. The pixel electrode has at least one opening that extends from the periphery to the inside of the pixel electrode and at least one extension part that extends in the row direction into an opening of a neighboring pixel electrode in the same row. Each of the scan lines alternately controls one of the pixel electrodes in a first row and one of the pixel electrodes in a second row immediately adjacent to the first row. | 06-18-2009 |
20090159894 | SEMICONDUCTOR DEVICE AND DISPLAY DEVICE - To provide a semiconductor device and a display device which include a circuit element capable of improving performances and a circuit element capable of increasing a withstand voltage on the same substrate and which can improve the reliability. The semiconductor device of the present invention includes a first circuit element and a second circuit element on a substrate, the first circuit element having a structure in which a first semiconductor layer, a first insulating film, a first conductive layer, and a third insulating film are stacked in this order, the second circuit element having a structure in which a second semiconductor layer, a second insulating film having a thickness larger than a thickness of the first insulating film, and a second conductive layer are stacked in this order, wherein the first insulating film has a multilayer structure including a silicon nitride layer as the uppermost layer, the second insulating film has a lower part and an upper part, the lower part includes the multilayer structure of the first insulating film, and the upper part includes a structure of the third insulating film formed on the first conductive layer. | 06-25-2009 |
20090159895 | Array substrate for liquid crystal display device and fabricating method of the same - A method of manufacturing an array substrate for a liquid crystal display device includes forming a gate line, a gate pad, a gate electrode, and a data pad on a substrate through a first mask process, forming a gate insulating layer on a substantial part of an entire surface of the substrate including the gate line, the gate pad, the gate electrode, and the data pad, forming a data line, a source-drain pattern and an active layer on the gate insulating layer and forming a gate pad contact hole and a data pad contact hole in the gate insulating layer through a second mask process, and forming a pixel electrode, a gate pad terminal, a data pad terminal, a source electrode, a drain electrode, and an ohmic contact layer through a third mask process. | 06-25-2009 |
20090166639 | ACTIVE FIELD EMISSION SUBSTRATE AND ACTIVE FIELD EMISSION DISPLAY - An active field emission substrate including a thin film transistor (TFT) substrate and a field emission device substrate is provided. The TFT substrate has a plurality of TFTs, and each TFT at least includes a source, a drain, and a gate. The field emission device substrate is disposed on the TFT substrate and has a plurality of conductive channels and a plurality of field emission sources. Each conductive channel passes through the field emission device substrate and is electrically connected with each field emission source. Moreover, each conductive channel in the field emission device substrate is electrically conducted with the source or the drain of each TFT in the TFT substrate. The active field emission substrate is made up of two substrates fabricated by separate processes, so the procedures can be simplified and the yield can be improved. | 07-02-2009 |
20090166640 | Copper wire, method for fabricating the same, and thin film transistor substrate with the same - The present invention relates to a copper wire in a semiconductor device in which a barrier layer is formed for improving adhesion of a copper wire without any additional fabricating step; a method for fabricating the same, and a flat panel display device with the same. The copper wire includes a barrier layer formed on an underlying structure, and a copper conductive layer on the barrier layer, wherein the barrier layer includes at least one of a Cu | 07-02-2009 |
20090166641 | Thin film transistor, method of fabricating a thin film transistor and flat panel display device having the same - A thin film transistor (TFT) includes a substrate, a transparent semiconductor layer on the substrate, the transparent semiconductor layer including zinc oxide and exhibiting a charge concentration of about 1×10 | 07-02-2009 |
20090173946 | PIXEL STRUCTURE AND ACTIVE DEVICE ARRAY SUBSTRATE - A pixel structure including an active device, a common line pattern, a protective layer, a pixel electrode, and a patterned semiconductor layer is provided. The active device is disposed on a substrate. In addition, the common line pattern is disposed on the substrate and covered with an insulation layer. The protective layer covers the active device and a part of the insulation layer. The protective layer has a contact window exposing the active device. The pixel electrode is disposed on the protective layer and electrically connected to the active device through the contact window. The patterned semiconductor layer is disposed on the insulation layer above the common line pattern. The patterned semiconductor layer is located between the common line pattern and the pixel electrode. | 07-09-2009 |
20090173947 | DISPLAY SUBSTRATE AND DISPLAY PANEL HAVING THE SAME - A display substrate according to exemplary embodiments of the present invention includes a transistor layer, a color filter layer and a pixel electrode. The transistor layer includes a transistor connected to a gate line and a data line crossing each other, and a contact part extending from a drain electrode of the transistor. The color filter layer is disposed on the transistor layer. The color filter layer has an opening formed therein, and a center of the opening is spaced apart from a center of the contact part. The pixel electrode is electrically connected to the transistor through a contact hole exposing the contact part. | 07-09-2009 |
20090173948 | UNIFORM LARGE-GRAINED AND GRAIN BOUNDARY LOCATION MANIPULATED POLYCRYSTALLINE THIN FILM SEMICONDUCTORS FORMED USING SEQUENTIAL LATERAL SOLIDIFICATION AND DEVICES FORMED THEREON - Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed. In one preferred arrangement, a method includes the steps of generating a sequence of excimer laser pulses, controllably modulating each excimer laser pulse in the sequence to a predetermined fluence, homoginizing each modulated laser pulse in the sequence in a predetermined plane, masking portions of each homoginized fluence controlled laser pulse in the sequence with a two dimensional pattern of slits to generate a sequence of fluence controlled pulses of line patterned beamlets, each slit in the pattern of slits being sufficiently narrow to prevent inducement of significant nucleation in region of a silicon thin film sample irradiated by a beamlet corresponding to the slit, irradiating an amorphous silicon thin film sample with the sequence of fluence controlled slit patterned beamlets to effect melting of portions thereof corresponding to each fluence controlled patterned beamlet pulse in the sequence of pulses of patterned beamlets, and controllably sequentially translating a relative position of the sample with respect to each of the fluence controlled pulse of slit patterned beamlets to thereby process the amorphous silicon thin film sample into a single or polycrystalline silicon thin film. | 07-09-2009 |
20090184323 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME - The present invention relates to a thin film transistor array panel and a method for manufacturing the same. A thin film transistor array panel according to the present invention includes a substrate, a light blocking member formed on the substrate and including a first furrow and a receiving portion, a gate line disposed on the first furrow, a semiconductor layer disposed on the gate line, a source electrode and a drain electrode formed on the semiconductor layer, and a pixel electrode connected to the drain electrode. The source electrode is an extension of the data line. | 07-23-2009 |
20090184324 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME - The present invention relates to a thin film transistor array panel and a manufacturing method thereof. The thin film transistor array panel according to the present invention includes a substrate, a light blocking member formed on the substrate, a gate line disposed on the light blocking member. The gate line and the light blocking member define a closed region A color filter is formed in the closed region and contacts the side surface of the gate line. A gate insulating layer is formed on the gate line and the color filter, a data line and a drain electrode are formed on the gate insulating layer, and a pixel electrode is connected to the drain electrode. | 07-23-2009 |
20090184325 | METHOD OF PLANARIZING SUBSTRATE, ARRAY SUBSTRATE AND METHOD OF MANUFACTURING ARRAY SUBSTRATE USING THE SAME - A method of planarizing a substrate. An organic layer is formed on a base substrate to cover a metal line formed on the base substrate. A portion of the organic layer is removed to form a pre-planarization layer exposing the metal layer, so that a surface of the base substrate having the metal line is planarized. The pre-planarization layer is cured to flow toward a side surface of the metal line to form a planarization layer making contact with the side surface of the metal line. Therefore, a stepped portion between the base substrate and the metal line can be minimized or substantially eliminated, thereby increasing the surface uniformity of a subsequent layer, thereby improving the reliability of the manufacturing process. | 07-23-2009 |
20090184326 | DISPLAY SUBSTRATE, METHOD FOR MANUFACTURING THE DISPLAY SUBSTRATE AND DISPLAY APPARATUS HAVING THE DISPLAY SUBSTRATE - A display substrate includes a base substrate, a gate line, a gate insulation layer, a data line, a thin-film transistor (TFT) and a pixel electrode. The gate line is extended in a first direction on the base substrate. The gate insulation layer is formed on the base substrate to cover the gate line. The data line is extended in a second direction and intersects the gate line at an intersecting portion. At the intersecting portion, the data line is separated from the gate line by an air gap. In another embodiment, the data line also includes at least one etching hole extending to the air gap. The TFT is electrically connected to the data and the gate lines. The pixel electrode is electrically connected to the TFT. | 07-23-2009 |
20090189161 | Light Emitting Device - While suppressing the frequency of a signal line driver circuit, a blur of a moving image of a light-emitting device using a light-emitting transistor can be prevented, without reducing a frame frequency. A switching element is provided in a path of a current which flows between a source and a drain of a light-emitting transistor, and the light-emitting transistor is made not to emit light by turning off the switching element, whereby pseudo-impulse driving is performed. Switching of the switching element can be controlled by a scan line driver circuit. In a specific structural example, the light-emitting device includes, in a pixel, a light-emitting transistor, a first switching element which controls supply of a potential of a video signal to a gate of the light-emitting transistor, and a second switching element which controls a current which flows between a source and a drain of the light-emitting transistor. | 07-30-2009 |
20090189162 | ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An organic light emitting diode display device to display a main image and a sub-image, such as background, illumination, or the like, without additional processes or a reduction in the resolution of the image, and a method of fabricating the same, the organic light emitting diode display device including: a substrate; a thin film transistor disposed on the substrate, including a semiconductor layer, a source electrode, a drain electrode, a gate insulating layer, and a gate electrode; an insulating layer disposed on the thin film transistor; a first lower electrode disposed on the insulating layer, electrically connected to the source electrode and the drain electrode of the thin film transistor; an auxiliary lower electrode disposed on the insulating layer, spaced apart from the first lower electrode; a first organic layer disposed on the first lower electrode, including at least one emission layer; a second organic layer disposed on the auxiliary lower electrode, including at least one emission layer; and an upper electrode disposed on the first organic layer and the second organic layer. | 07-30-2009 |
20090189163 | THIN FILM TRANSISTOR ARRAY SUBSTRATE - A TFT array substrate includes a substrate, a patterned first metallic layer, a patterned stack layer, a patterned dielectric layer, a patterned transparent conductive layer, and a patterned third metallic layer. Elements of each TFT in the TFT array substrate are arranged vertically, so that the TFT array substrate has relatively small fabrication area and is operable with a high conducting current. Further, the storage capacitance can be enhanced by enclosing or sandwiching the second metallic layer with the common lines and the transparent electrodes. In such a way, pixel flashing caused by those coupled signals can be reduced, thus promoting displaying quality thereof. | 07-30-2009 |
20090189164 | UNIFORM LARGE-GRAINED AND GRAIN BOUNDARY LOCATION MANIPULATED POLYCRYSTALLINE THIN FILM SEMICONDUCTORS FORMED USING SEQUENTIAL LATERAL SOLIDIFICATION AND DEVICES FORMED THEREON - Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed. In one preferred arrangement, a method includes the steps of generating a sequence of excimer laser pulses, controllably modulating each excimer laser pulse in the sequence to a predetermined fluence, homoginizing each modulated laser pulse in the sequence in a predetermined plane, masking portions of each homoginized fluence controlled laser pulse in the sequence with a two dimensional pattern of slits to generate a sequence of fluence controlled pulses of line patterned beamlets, each slit in the pattern of slits being sufficiently narrow to prevent inducement of significant nucleation in region of a silicon thin film sample irradiated by a beamlet corresponding to the slit, irradiating an amorphous silicon thin film sample with the sequence of fluence controlled slit patterned beamlets to effect melting of portions thereof corresponding to each fluence controlled patterned beamlet pulse in the sequence of pulses of patterned beamlets, and controllably sequentially translating a relative position of the sample with respect to each of the fluence controlled pulse of slit patterned beamlets to thereby process the amorphous silicon thin film sample into a single or polycrystalline silicon thin film. | 07-30-2009 |
20090194770 | DOUBLE-ACTIVE-LAYER STRUCTURE WITH A POLYSILICON LAYER AND A MICROCRYSTALLINE SILICON LAYER, METHOD FOR MANUFACTURING THE SAME AND ITS APPLICATION - A first amorphous silicon layer is formed over a substrate and a second amorphous silicon layer is formed over the first amorphous silicon layer. When a laser annealing process is performed, the second amorphous silicon layer absorbs more laser light than the first amorphous silicon layer does. The first amorphous silicon layer crystallizes into a microcrystalline silicon layer and the second amorphous silicon layer crystallizes into a polysilicon layer. During the laser annealing process, light interference between the first amorphous silicon layer and an underlying buffer layer is eliminated owing to that the second amorphous silicon layer absorbs more laser light. The laser fringe is eliminated. The microcrystalline silicon layer with better crystalline uniformity can serve as an active layer for TFTs in the display area of an OLED display to improve its illumination uniformity. | 08-06-2009 |
20090194771 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object of the present invention is to provide a semiconductor device which has flexibility and resistance to a physical change such as bending and a method for manufacturing the semiconductor device. A semiconductor device of the present invention includes a plurality of transistors provided over a flexible substrate, each of which has a semiconductor film, a gate electrode provided over the semiconductor film with a gate insulating film therebetween, and an interlayer insulating film provided to cover the gate electrode, and a bending portion provided between the plurality of transistors, in which the bending portion is provided by filling an opening formed in the interlayer insulating film with a material having a lower elastic modulus, a material having a lower glass transition point, or a material having a higher plasticity than that of the interlayer insulating film. | 08-06-2009 |
20090200558 | Method and apparatus of fabricating liquid crystal display device - A method and an apparatus of fabricating a liquid crystal display device adapted to improve a lift-off efficiency are disclosed. The liquid crystal display device is also disclosed. The method includes forming a first thin film on a substrate; forming a photo-resist pattern on the first thin film; etching the first thin film using the photo-resist pattern as a mask; forming a second thin film on the substrate having the photo-resist pattern; forming a plurality of stripper infiltration paths; and removing the photo-resist pattern and the second thin film using a stripper within the stripper infiltration paths. The device includes two substrates facing each other; a liquid crystal layer; data lines and gate lines that cross each other to define pixel regions; thin film transistors; pixel electrodes connected to the thin film transistors; and an inorganic layer in each pixel region, wherein the inorganic layer includes a plurality of cracks. | 08-13-2009 |
20090206342 | DISPLAY DEVICE - An object is to reduce an occupied area of a protection circuit. Another object is to increase the reliability of a display device including the protection circuit. The protection circuit includes a first wiring over a substrate, an insulating film over the first wiring, and a second wiring over the insulating film. | 08-20-2009 |
20090206343 | DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - In a display apparatus and a method of manufacturing the display apparatus, a first insulating layer having a trench and a second insulating layer having a via hole corresponding to the trench are formed on an array substrate. After forming a seed layer in the trench, a conductive layer is formed on the seed layer through a plating process, thereby forming the gate line, the gate electrode and the storage line accommodated in the trench and the via hole. | 08-20-2009 |
20090206344 | System for displaying images - A system for displaying images is disclosed. The system includes a self-emitting display device including an array substrate having a pixel region. A light-emitting diode is disposed on the array substrate of the pixel region. First and second driving thin film transistors are electrically connected to a light-emitting diode. The first driving thin film transistor includes a first gate and an active layer stacked on the array substrate of the pixel region and the second driving thin film transistor includes the active layer and a second gate thereon. The first gate is coupled to a first voltage and the second gate is coupled to a second voltage different from the first voltage during the same frame. | 08-20-2009 |
20090206345 | SEMICONDUCTOR DEVICE - A semiconductor device having a display unit, which is small in size, suppresses the defect caused by the mounting of IC chips and the like on the substrate, and operates at a high speed. A semiconductor display unit and other circuit blocks are integrally formed on the substrate having an insulating surface by using a process for fabricating TFTs that realize a high degree of mobility. Concretely, there is employed a process for crystallizing a semiconductor active layer by using a continuously oscillating laser. Further, the process for crystallization relying upon the continuously oscillating laser is selectively effected for only those circuit blocks that must be operated at high speeds, thereby to realize a high production efficiency. | 08-20-2009 |
20090206346 | TFT LCD ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - The present invention discloses a method for manufacturing a TFT LCD array substrate by utilizing the gray tone mask technology and the photoresist lifting-off technology with only two masks in two photolithography processes, and to a TFT LCD array substrate manufactured by the same. In the resultant array substrate, the gate line and the data line are perpendicular to and intersect with each other to define the pixel area, and one of the gate line and the data line is continuous and the other is discontinuous. The array substrate is covered with a passivation protection film. The disconnected gate line or the data line is connected together through the via holes formed in the passivation protection film and the connecting conductive film formed on the passivation protection film. The data line and the source electrode and drain electrode of the TFT are made of the same conductive film, and the connecting conductive film and the pixel electrode are made of the same conductive film in the same photolithography process. | 08-20-2009 |
20090212298 | Thin Film Transistor Substrate Having Nickel-Silicide Layer - Disclosed are a thin film transistor substrate of an LCD device and a method of manufacturing the same. The thin film transistor substrate includes a nickel-silicide layer formed on an insulating layer pattern including silicon and a metal layer formed on the nickel-silicide layer. Nickel is coated on the insulating layer pattern including silicon and a metal material is coated on the nickel-coated layer. After that, a heat treatment is performed at about 200 to about 350° C. to obtain the nickel-silicide layer. Since the thin film transistor substrate of the LCD device is manufactured by applying the nickel-silicide wiring, a device having low resistivity and good ohmic contact property can be obtained. | 08-27-2009 |
20090212299 | DISPLAY ELEMENT - A thin film transistor layer including a thin film transistor is formed at a liquid crystal layer side of a color filter layer on an array substrate. Since it becomes possible to form the color filter layer at a position on a relatively flat glass substrate, satisfactory characteristics of the color filter layer can be obtained. The color filter layer is unlikely to have influence on the thin film transistor layer, so that the yield can be improved. | 08-27-2009 |
20090212300 | LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE - An objective is simplification of a manufacturing method of a liquid crystal display device or the like. In a manufacturing method of a thin film transistor, a stack in which a first conductive film, an insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film are stacked in this order is formed, and the first conductive film is exposed by first etching and a pattern of the second conductive film is formed by second etching. Further, after thin film transistors are formed, a color filter layer is formed so that unevenness caused by the thin film transistors or the like is relieved; thus, the level difference of the surface where the pixel electrode layer is formed is reduced. Alternatively, a color filter layer is selectively formed utilizing the unevenness caused by thin film transistors or the like. | 08-27-2009 |
20090218574 | Display device and manufacturing method therefor - A display device includes a thin film transistor above a substrate, in which the thin film transistor is configured to include a gate electrode, a gate insulating film formed to cover the gate electrode, a semiconductor layer formed to stride over the gate electrode on the gate insulating film, an inter-layer insulating film formed to cover the semiconductor layer, and a pair of electrodes formed to be connected to each of sides of the semiconductor layer interposing the gate electrode therebetween through contact holes formed through the inter-layer insulating film, high concentration impurity layers are formed at each connecting portion of the electrodes of the semiconductor layer, and an annular low-concentration impurity layer is formed to surround at least one of the high concentration impurity layers. | 09-03-2009 |
20090218575 | Display device and manufacturing method thereof - Provided is a display device including a p-type thin film transistor formed on a substrate, in which the p-type thin film transistor includes: a gate electrode; a drain electrode; a source electrode; an insulating film; a semiconductor layer formed on a top surface of the gate electrode through the insulating film; and diffusion layers of p-type impurities formed at each of an interface between the drain electrode and the semiconductor layer and an interface between the source electrode and the semiconductor layer, the drain electrode and the source electrode being formed so as to be opposed to each other with a clearance formed therebetween on a top surface of the semiconductor layer. | 09-03-2009 |
20090218576 | THIN-FILM TRANSISTOR AND DISPLAY DEVICE - A thin-film transistor includes a pair of impurity semiconductor layers in which an impurity element imparting one conductivity type is added to form a source and drain regions so as to be overlapped at least partly with a gate electrode with a gate insulating layer interposed between the gate electrode and the impurity semiconductor layers; a pair of conductive layers which is overlapped over the gate insulating layers at least partly with the gate electrode and the impurity semiconductor layers, and is disposed with a space therebetween in a channel length direction; and an amorphous semiconductor layer which is in contact with the gate insulating layer and the pair of conductive layers and is extended between the pair of conductive layers. | 09-03-2009 |
20090230401 | LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A liquid crystal display device includes a gate line placed above a substrate, a gate insulating layer to cover the gate line, a source line placed above the gate insulating layer, an interlayer insulating layer to cover the source line, a comb-shaped or slit-shaped pixel electrode electrically connected a drain electrode of a TFT through a contact hole penetrating the interlayer insulating layer, a first counter electrode placed below and opposite to the pixel electrode with an insulating layer interposed therebetween to generate an oblique electric field with the pixel electrode, and a second counter electrode formed in the same layer as the pixel electrode and placed overlapping the source line in a given area to generate an in-plane electric field with the pixel electrode. | 09-17-2009 |
20090230402 | DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - A display apparatus including a first substrate including a pixel area; a gate line disposed on the first substrate; a data line disposed on the first substrate and insulated from the gate line; an insulating layer pattern interposed between the gate line and the data line in an area where the gate line and the data line overlap; a gate insulating layer interposed between the gate line and the data line; a pixel electrode disposed in the pixel area; and a second substrate facing the first substrate. | 09-17-2009 |
20090230403 | Dual Gate Layout for Thin Film Transistor - A dual gate layout of a thin film transistor of liquid crystal display to alleviate dark current leakage is disclosed. The layout comprises (1) a polysilicon on a substrate having a L-shaped or a snake shaped from top-view, which has a heavily doped source region, a first lightly doped region, a first gate channel, a second lightly doped region, a second gate channel, a third lightly doped region and a heavily doped drain region formed in order therein; (2) a gate oxide layer formed on the polysilicon layer and the substrate, (3) a gate metal layer then formed on the gate oxide layer having a scanning line and an extension portion with a L-shaped or an I-shaped. The gate metal intersects with the polysilicon layer thereto define the forgoing gate channels. Among of gate channels, at least one is along the signal line, which is connected to the source region through a source contact. | 09-17-2009 |
20090236604 | THIN FILM TRANSISTOR SUBSTRATES AND METHOD OF MANUFACTURING THE SAME - A thin film transistor substrate includes a color filter layer and a gate line. The color filter layer has a reverse taper shape, which is used to pattern the gate line without a separate mask. Thus, the total number of masks used to manufacture the thin film transistor substrate can be reduced, thereby reducing the manufacturing cost and improving the productivity. | 09-24-2009 |
20090236605 | TFT-LCD PIXEL STRUCTURE AND MANUFACTURING METHOD THEREOF - A thin film transistor liquid crystal display (TFT-LCD) pixel structure comprising: a gate line and a gate electrode formed on a substrate; a first insulating layer, a semiconductor layer, and a doped semiconductor layer formed sequentially on the gate electrode and the gate line, wherein an isolating groove is formed above the gate line which disconnects the semiconductor layer on the gate line; a second insulating layer covering the isolating groove and a portion of the substrate where the gate line and the gate are not formed; a pixel electrode formed on the second insulating layer, wherein the pixel electrode is integral with a drain electrode and is connected with the doped semiconductor layer on the gate electrode at a place where the drain electrode is formed; a source electrode, which is a portion of a data line, formed on the doped semiconductor layer; and a channel formed between the source electrode and the drain electrode. | 09-24-2009 |
20090236606 | Dual Gate Layout for Thin Film Transistor - A dual gate layout of a thin film transistor of liquid crystal display to alleviate dark current leakage is disclosed. The layout comprises ( | 09-24-2009 |
20090236607 | ELECTRONIC CIRCUIT - An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layer is less than 1500 Å, e.g., between 100 and 750 Å. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting of aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer. | 09-24-2009 |
20090242893 | Semiconductor device, production method thereof, and display device - The present invention provides a semiconductor device which can be produced by simple and cheap processes and effectively achieve improved performances and a reduced electric power consumption. Further, the present invention provides a production method thereof and a display device including the semiconductor device or a semiconductor device produced by the production method. The present invention is a semiconductor device including a pixel part and an integrated circuit part on a substrate, the pixel part including a switching element having a gate electrode formed on a semiconductor thin film, the integrated circuit part including a semiconductor layer on a gate electrode, wherein a passivation film is formed on the gate electrode in the pixel part. | 10-01-2009 |
20090242894 | Thin-Film-Transistor Structure, Pixel Structure and Manufacturing Method Thereof - A thin-film-transistor (TFT) structure, a pixel structure and a manufacturing method thereof are provided. The TFT structure is formed in the pixel structure of a liquid crystal display (LCD). The TFT structure comprises a gate, a first dielectric layer, a patterned semiconductor layer, a second dielectric layer and a third dielectric layer stacked sequentially. The second dielectric layer and the third dielectric layer are formed on part of the patterned semiconductor layer to define a covered region and an uncovered region on the patterned semiconductor layer. The uncovered region of the second dielectric layer and the third dielectric layer jointly define an opening, which has at least one top lateral dimension and a bottom lateral dimension smaller than the top lateral dimension. Thereby, a lightly doped structure is formed in a portion of the covered region via the second dielectric layer after ion implantation. | 10-01-2009 |
20090242895 | THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHTING EMITTING DIODE DISPLAY DEVICE INCLUDING THE SAME - A thin film transistor, a method of fabricating the same, and an organic light emitting diode display device including the same. The thin film transistor includes: a substrate; a semiconductor layer disposed on the substrate, including a channel region, source/drain regions, and a body contact region; a gate insulating layer disposed on the semiconductor layer so as to expose the body contact region; a gate electrode disposed on the gate insulating layer, so as to contact the body contact region; an interlayer insulating layer disposed on the gate electrode; and source/drain electrodes disposed on the interlayer insulating layer and electrically connected to the source/drain regions. The body contact region is formed in an edge of the semiconductor layer. | 10-01-2009 |
20090250701 | Circuit board, electronic device, and method for producing circuit board - The present invention provides a circuit board which can improve characteristics of a circuit element, an electronic device, and a method for producing a circuit board. The method for producing a circuit board of the present invention is a method for producing a circuit board including one or more polysilicon layers at the same layer level, wherein the method includes the steps of: forming a photoresist film on the polysilicon layer; forming a photoresist pattern film having side surfaces with different inclination angles by patterning the photoresist film; forming the one or more polysilicon layers having side surfaces with different inclination angles by etching the polysilicon film using the photoresist pattern film. | 10-08-2009 |
20090250702 | STATIC-TOLERANT DISPLAY APPARATUS - A display apparatus includes a thin film transistor having a top-gate structure and a storage capacitor that are arranged on a first substrate. An upper electrode of the storage capacitor has a size larger than a size of a lower electrode, so as to cover an entire surface of the lower electrode in a plan view. Thus, electric field caused by static electricity may be prevented from accumulating at a corner of the upper electrode when the electric filed flows from the lower electrode to the upper electrode, thereby preventing an intermediate insulating layer from being burnt. | 10-08-2009 |
20090250703 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - It is provided a contacting method when a plurality of films to be peeled are laminating. Reduction of total layout area, miniaturization of a module, weight reduction, thinning, narrowing a frame of a display device, or the like can be realized by sequentially laminating a plurality of films to be peeled which are once separately formed over a plastic film or the like. Moreover, reliable contact having high degree of freedom is realized by forming each layer having a connection face of a conductive material and by patterning with the use of a photomask having the same pattern. | 10-08-2009 |
20090250704 | Semiconductor Device and Method of Fabricating the Same - An active matrix display device having a pixel structure in which pixel electrodes, gate wirings and source wirings are suitably arranged in the pixel portions to realize a high numerical aperture without increasing the number of masks or the number of steps. The device comprises a gate electrode and a source wiring on an insulating surface, a first insulating layer on the gate electrode and on the source wiring, a semiconductor layer on the first insulating film, a second insulating layer on the semiconductor film, a gate wiring connected to the gate electrode on the second insulating layer, a connection electrode for connecting the source wiring and the semiconductor layer together, and a pixel electrode connected to the semiconductor layer. | 10-08-2009 |
20090256155 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME - A thin film transistor panel includes a substrate, a gate line extending in a first direction on the substrate, a data line disposed on the substrate, the data line crossing the gate line with an insulation layer therebetween and extending in a second direction, a thin film transistor including a control terminal connected to the gate line, an input terminal connected to the data line, and an output terminal, a color filter disposed on the thin film transistor, the color filter having an opening corresponding to the output terminal of the thin film transistor, a light blocking member disposed in the opening of the color filter, the light blocking member exposing a first region of a first end portion of the output terminal of the thin film transistor and having an output terminal light blocking portion enclosing the circumference of the first region, and a pixel electrode disposed on the light blocking member and the color filter, the pixel electrode contacting the first region of the output terminal. | 10-15-2009 |
20090256156 | Hybrid imaging sensor with approximately equal potential photodiodes - A hybrid MOS or CMOS image sensor. The sensor includes photon-sensing elements comprised of an array of photo-sensing regions deposited in the form of separate islands on or in a substrate. Pixel circuitry is created on and/or in the substrate at or near the edge of or beneath the photon-sensing elements. The photo-sensing elements may be comprised of multiple photo-sensing semiconductor layers or be created in a single photon-sensing semiconductor layer. Special circuitry is provided to keep the potential across the pixel photon-sensing element at or near zero volts to minimize or eliminate dark current. The potential difference is preferably less than 1.0 volt. The circuitry also keeps the small potential difference across the photodiodes constant or approximately constant throughout the charge collection cycle. In preferred embodiments the substrate is a crystalline substrate and the photon-sensing elements are separated from the substrate by a dielectric material except for a hole at the bottom through which the material of the photon-sensing element can be grown epitaxially from the substrate. | 10-15-2009 |
20090256157 | DISPLAY DEVICE AND MANUFACTURING METHOD OF DISPLAY DEVICE - A display device includes a first substrate on which a semiconductor circuit is formed. A second substrate is disposed over the first substrate to include a first electrode formed on a first surface to perform image displaying, and a second electrode exposed to a second surface and bonded to the first electrode via a contact hole. A third substrate is disposed over the second substrate to include a third electrode formed to perform image displaying in association with the first electrode of the second substrate. An image displaying layer is disposed between the second substrate and the third substrate to perform image displaying. An electrode on a surface of the first substrate on which the semiconductor circuit is formed is electrically connected to the second electrode exposed to the second surface of the second substrate. | 10-15-2009 |
20090256158 | ARRAY SUBSTRATE OF LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An array substrate comprising a base substrate, a common electrode, a gate line, a data line, a thin film transistor, a passivation layer and a pixel electrode of “ | 10-15-2009 |
20090261337 | SEMICONDUCTOR DEVICE - It is an object to provide a transistor having a new multigate structure in which operating characteristics and reliability are improved. In a transistor having a multigate structure, which includes two gate electrodes electrically connected to each other and a semiconductor layer including two channel regions connected in series formed between a source region and a drain region, and a high concentration impurity region is formed between the two channel regions; the channel length of the channel region adjacent to the source region is longer than the channel length of the channel region adjacent to the drain region. | 10-22-2009 |
20090261338 | ACTIVE MATRIX SUBSTRATE, DISPLAY DEVICE, AND TELEVISION RECEIVER - An active matrix substrate includes a plurality of transistors. A source electrode is connected with a data signal line, and a drain electrode is connected with a pixel electrode in each transistor. The source electrode is located on a semiconductor layer, and at least a portion of the drain electrode is overlapped with the gate electrode. A gate insulating film covering the gate electrode of each transistor has a thin section having a reduced film thickness, at a portion where the gate insulating film is overlapped with each gate electrode. An overlapping area of the thin section with the source electrode is smaller than an overlapping area of the thin section with the drain electrode. Thus, the active matrix substrate can prevent the generation of short-circuits between the signal lines (between the data signal line and a scanning signal line) in a TFT forming region, while guaranteeing TFT characteristics. | 10-22-2009 |
20090261339 | GATE DRIVER ON ARRAY OF A DISPLAY AND METHOD OF MAKING DEVICE OF A DISPLAY - In a method of making device of a display, an insulating layer, a semiconductor layer, an ohmic contact layer, a second conductive layer, and a photoresist pattern are consecutively formed on a first conductive structure. The photoresist pattern includes a first thickness region, and a second thickness region outside the first thickness region. The thickness of the second thickness region is smaller than that of the first thickness region. In addition, in a gate driver on array (GOA) of a display, it includes a gate driver on array structure with a pull-down transistor. The pull-down transistor has a gate electrode, a semiconductor island, a source electrode and a drain electrode. The semiconductor island extends out of the edges of the gate electrode, the source electrode, and the drain electrode. | 10-22-2009 |
20090261340 | DISPLAY SUBSTRATE, LIQUID CRYSTAL DISPLAY DEVICE HAVING THE SAME AND METHOD OF MANUFACTURING A DISPLAY SUBSTRATE - A display substrate includes; a gate line disposed on a substrate, a first insulating layer disposed on the substrate including the gate line, the first insulating layer including an opening part extended in a direction crossing the gate line, a data line disposed on the first insulating layer and an inner surface of the opening part, the data line extending in a direction substantially parallel with an extension direction of the opening part, a protective layer disposed on the first insulating layer and the data line, a switching element electrically connected to the gate line and the data line and a pixel electrode electrically connected to the switching element. | 10-22-2009 |
20090261341 | ORGANIC LIGHT EMITTING DISPLAY AND METHOD OF MANUFACTURING THE SAME - An organic light emitting display includes a pixel part adapted to generate a light and a metal oxide layer. The metal oxide layer is formed by oxidation of a metal layer combined with oxygen of gas or humidity in an inner space of the organic light emitting display. Accordingly, gas or humidity in the organic light emitting display is removed by the oxidation of the metal oxide layer to thereby inhibit deterioration in a light emitting function of the pixel part. | 10-22-2009 |
20090261342 | ARRAY SUBSTRATE OF THIN FILM TRANSISTOR LIQUID CRYSTAL DISPLAY AND METHOD OF MANUFACTURING THE SAME - An embodiment of the invention provides an array substrate of a thin film transistor liquid crystal display comprising a gate line and a data line formed on a base substrate, a pixel electrode formed in a pixel region defined by intersecting of the gate line and data line, and a thin film transistor (TFT) formed at the intersection as an switch device. The TFT comprises a gate electrode, a gate insulating layer, a transparent conductive layer, a source electrode and a drain electrode, an ohmic contact, a semiconductor layer, and a passivation layer in order from the base substrate. At the drain electrode side the transparent conductive layer is formed by the same layer as the pixel electrode and contacts with the drain electrode, and the source electrode is connected with the data line. | 10-22-2009 |
20090267074 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A organic light emitting display device includes a thin film transistor (TFT) having a gate electrode, a source electrode and a drain electrode which are insulated from the gate electrode, and a semiconductor layer which is insulated from the gate electrode and which contacts each of the source electrode and the drain electrode; and a pixel electrode electrically connected to one of the source electrode and the drain electrode. The gate electrode is made up of a first conductive layer and a second conductive layer on the first conductive layer, and the pixel electrode is formed of the same material as the first conductive layer of the gate electrode on a same layer as the first conductive layer of the gate electrode. | 10-29-2009 |
20090267075 | OGANIC THIN FILM TRANSISTOR AND PIXEL STRUCTURE AND METHOD FOR MANUFACTURING THE SAME AND DISPLAY PANEL - A method of manufacturing an organic thin film transistor is described. A patterned insulating layer having an opening therein is formed on a substrate. A gate is formed in the opening of the insulating layer, and a gate insulating layer is formed on the gate. A conductive material layer is formed on the gate insulating layer by a printing process. One of the gate insulating layer and the conductive material layer is hydrophobic or hydrophilic and the other is hydrophilic or hydrophobic, such that the conductive material layer is naturally separated to two sides of the gate insulating layer to form a source and a drain. An active layer is formed on the gate insulating layer between the source and the drain. | 10-29-2009 |
20090267076 | EL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - Plurality of pixels ( | 10-29-2009 |
20090267077 | SEMICONDUCTOR ELEMENT, ORGANIC TRANSISTOR, LIGHT-EMITTING DEVICE, AND ELECTRONIC DEVICE - It is an object of the present invention to provide an organic transistor having a low drive voltage. It is also another object of the present invention to provide an organic transistor, in which light emission can be obtained, which can be manufactured simply and easily. According to an organic light-emitting transistor, a composite layer containing an organic compound having a hole-transporting property and a metal oxide is used as part of the electrode that injects holes among source and drain electrodes, and a composite layer containing an organic compound having an electron-transporting property and an alkaline metal or an alkaline earth metal is used as part of the electrode that injects electrons, where either composite layer has a structure of being in contact with an organic semiconductor layer. | 10-29-2009 |
20090272979 | Active Matrix Electronic Array Device - An active matrix device has an array ( | 11-05-2009 |
20090272980 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD OF THE SAME - A semiconductor including a channel, a data line including a source electrode, a drain electrode, and a pixel area definition member is formed on a gate insulating layer, and a passivation layer is deposited on the data line, the pixel area definition member, and the channel of the semiconductor. A first photosensitive film pattern including a first portion disposed at a position corresponding to the drain electrode and a second portion that is thicker than the first portion, and exposing the passivation layer at a position corresponding to the pixel area definition member, is formed on the passivation layer, the passivation layer that is exposed by using the first photosensitive film pattern as an etch mask is etched, and a second photosensitive film pattern is formed by etching the whole surface of the first photosensitive film pattern to remove the first portion. The pixel area definition member exposed by the passivation layer is etched, and the passivation layer exposed by the removal of the first portion and the semiconductor exposed by the removal of the pixel area definition member are etched. A conductor layer for a pixel electrode is formed, and the second photosensitive film pattern is removed to form the pixel electrode. | 11-05-2009 |
20090272981 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A display substrate includes a gate electrode, a gate insulating layer, and a semiconductor layer that are sequentially formed on a substrate. Also, the display substrate includes a color filter layer formed on the substrate and exposing a portion of the semiconductor layer, and source and drain electrodes that each overlap with the semiconductor layer and the color filter layer. The gate electrode, the gate insulating layer, and the semiconductor layer have the same shape as each other, and the gate electrode is insulated from the gate insulating layer and the semiconductor layer by the color filter layer. | 11-05-2009 |
20090278131 | Thin film transistor array arrangement, organic light emitting display device having the same, and manufacturing method thereof - A thin film transistor (TFT) array arrangement, an organic light emitting display device that includes the TFT array arrangement and a method of making the TFT array arrangement and the organic light emitting display device. The method seeks to reduce the number of masks used in the making of the TFT array arrangement by employing half-tone masks that are followed by a two step etching process and by forming layers of the capacitor simultaneous with the formation of layers of the source, drain and pixel electrodes. As a result, individual layers of the capacitor are on the same level and are made of the same material as ones of the layers of the source, drain and pixel electrodes. The capacitor has three electrodes spaced apart by two separate dielectric layers to result in an increased capacity capacitor without increasing the size of the capacitor. | 11-12-2009 |
20090278132 | ARRAY SUBSTRATE OF LIQUID CRYSTAL DISPLAY DEVICE HAVING THIN FILM TRANSISTOR ON COLOR FILTER AND METHOD OF FABRICATING THE SAME - An array substrate of a liquid crystal display device having a color filter on a gate metal layer, and a data metal layer formed on the color filter. First a gate insulating layer is formed on the gate metal layer to protect and a second gate insulating layer is formed on the color filter layer. Gate lines and gate electrodes are formed in direct contact with the substrate, and color filters are formed on the gate electrodes. To protect gate lines in the patterning process of color filters, a first gate insulating layer is formed on the gate lines and electrodes. Therefore, a high aperture ratio may be enhanced, and the manufacturing yield may be increased. | 11-12-2009 |
20090278133 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME, AND LIQUID CRYSTAL DISPLAY - A thin film transistor array panel includes a substrate, a first thin film transistor formed on the substrate, a color filter formed on the first thin film transistor and having a through hole, a capping layer formed on the color filter and having an opening, and a pixel electrode formed on the capping layer and connected to the first thin film transistor through the through hole. The opening exposes the color filter outside the through hole. | 11-12-2009 |
20090278134 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE - In a semiconductor device according to the present invention, an insulator layer on a substrate is provided with a trench. A gate electrode is formed in the trench so that an upper surface of the gate electrode is approximately flush with an upper surface of the insulator layer. On the gate electrode, a semiconductor layer is provided via a gate insulating film. At least one of a source electrode and a drain electrode is electrically connected to the semiconductor layer. Particularly, the gate insulating film includes an insulator coating film provided on the gate electrode, and an insulator CVD film formed on the insulator coating film. | 11-12-2009 |
20090278135 | THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE USING THE SAME - Disclosed herein is a thin film transistor, including: a gate electrode; a crystallized semiconductor layer formed through a gate insulating film on the gate electrode; and a drain electrode and a source electrode provided on both end sides of the crystallized semiconductor layer, respectively, and provided through impurity doped layers each contacting the crystallized semiconductor layer, respectively. | 11-12-2009 |
20090283773 | Production Method of Semiconductor Device and Semiconductor Device - To provide a method for producing a high-performance semiconductor device by a simple and low-temperature process. The method for producing a semiconductor device, in accordance with the present invention, is a production method of a semiconductor device including a first insulating film, a semiconductor layer, and a second insulating film in this order on a substrate, the method including the steps of: forming a first insulating film including a hydrogen barrier layer; forming a semiconductor layer on a region where the hydrogen barrier layer of the first insulating film is formed; injecting hydrogen into the semiconductor layer; forming a second insulating film, the second insulating film including a hydrogen barrier layer on at least a region where the semiconductor layer is formed; and subjecting the semiconductor layer to hydrogenation annealing. | 11-19-2009 |
20090283774 | ORGANIC LIGHT EMITTING DISPLAY AND METHOD FOR MAKING THE SAME - An organic light emitting display and a method for making the same includes protection circuitry to avoid damage from static electricity. The display and method allow performing a lighting test during display manufacturing. The organic light emitting display includes a substrate, a display region on the transparent substrate with a matrix of pixels, and a signal transfer unit on the transparent substrate for transferring lighting test signals to the pixels. The signal transfer unit includes transistors for transferring the lighting test signals and a resistor coupled to drains and gates of the transistors for protecting the transistors against damage from static electricity. | 11-19-2009 |
20090283775 | SEMICONDUCTOR DEVICE - Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented. | 11-19-2009 |
20090289259 | PIXEL STRUCTURE OF DISPLAY PANEL AND METHOD OF MAKING THE SAME - A pixel structure of a display panel is provided. The pixel structure includes a first storage capacitor formed by a pixel electrode and a common electrode pattern, and a second storage capacitor formed by an electrode pattern and the common electrode pattern. Accordingly, the storage capacitance is greatly improved without sacrificing the aperture ratio, or the aperture ratio is improved by reducing the area of the storage capacitor while the storage capacitance is maintained. | 11-26-2009 |
20090289260 | LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF MANUFACTURING THAT - A liquid crystal display device which can reduce or eliminate a display defect is provided. The liquid crystal display device includes a first alignment film formed on one of the pair of substrates; a second alignment film formed on another of the pair of substrates; first projecting portions which are provided to the first alignment film and project into the liquid crystal layer by first constitutional members which constitute a layer below the first alignment film; and second projecting portions which are provided to the second alignment film, face the first projecting portions, and project into the liquid crystal layer by second constitutional members which constitute a layer below the second alignment film, the first projecting portion being set lower than the second projecting portion, and an area of an upper surface of the first projecting portion being set smaller than an area of an upper surface of the second projecting portion. The first alignment film is made of a photo-decomposition-type alignment film material. | 11-26-2009 |
20090294773 | BOROALUMINO SILICATE GLASSES - Disclosed are alkali-free glasses having a liquidus viscosity of greater than or equal to about 90,000 poises, said glass comprising SiO | 12-03-2009 |
20090302323 | Method and apparatus for providing a low-level interconnect section in an imager device - Imager pixels with low-level interconnect sections, methods of assembling imager pixels with low-level interconnect sections, and systems containing imager pixels with low-level interconnect sections. Imager pixels are formed such that specific interconnections between transistors and other components of an imager array are removed from one or more upper level metallization sections and placed on a low-level interconnect section closer to the photodetector, such that one upper metallization section is eliminated. | 12-10-2009 |
20090302324 | Thin film transistor panel - A thin film transistor panel includes an insulating substrate. The insulating substrate includes a number of parallel source lines, a number of parallel gate lines crossed with the source lines, and a number of girds defined by the source lines and the gate lines. Each of the girds includes a pixel electrode and a thin film transistor. The thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The source electrode is connected with one of the source lines defining the grid. The drain electrode is spaced from the source electrode and connected with the pixel electrode. The semiconducting layer is connected with the source electrode and the drain electrode. The semiconducting layer includes a semiconducting carbon nanotube layer. The gate electrode is connected with one of the gate lines defining the grid. | 12-10-2009 |
20090302325 | THIN FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY APPARATUS HAVING THE SAME - In a thin film transistor substrate, an active pattern of a thin film transistor includes a lower semiconductor pattern and an upper semiconductor pattern that are patterned through different process steps. The lower semiconductor pattern defines a channel area of the thin film transistor, and the upper semiconductor pattern is connected to a side portion of the lower semiconductor pattern and makes contact with the source electrode and the drain electrode. An etch stop layer is formed on the lower semiconductor pattern corresponding to the channel area, and the etch stop layer is formed through the same patterning process as the lower semiconductor pattern. Also, an ohmic contact pattern is formed on the upper semiconductor pattern, and the ohmic contact pattern is formed by the same patterning process as the upper semiconductor pattern. | 12-10-2009 |
20090309102 | Array substrate for liquid crystal display device and method of fabricating the same - An array substrate for a liquid crystal display device includes: a gate line and a gate electrode on a substrate, the gate electrode connected to the gate line; a gate insulating layer on the gate line and the gate electrode, the gate insulating layer including an organic insulating material such that a radical of carbon chain has a composition ratio of about 8% to about 11% by weight; a semiconductor layer on the gate insulating layer over the gate electrode; a data line crossing the gate line to define a pixel region; source and drain electrodes on the semiconductor layer, the source electrode connected to the data line and the drain electrode spaced apart from the source electrode; a passivation layer on the data line, the source electrode and the drain electrode, the passivation layer having a drain contact hole exposing the drain electrode; and a pixel electrode on the passivation layer, the pixel electrode connected to the drain electrode through the drain contact hole | 12-17-2009 |
20090309103 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A display device includes source/drain electrodes on a substrate, a pixel electrode, an insulating partition wall layer, a channel-region semiconductor layer. The source/drain electrodes and the pixel electrode are formed on the substrate and in contact with each other. The insulating partition wall layer is formed on the substrate and provided with a first opening extending to between the source electrode and the drain electrode and a second opening formed on the pixel electrode and extending to the pixel electrode. The channel-region semiconductor layer is formed on the bottom of the first opening. The insulating film is formed on the partition wall layer so as to cover the first opening including the channel-region semiconductor layer. The oriented film covers the first opening from above the insulating film and the second opening from the pixel electrode. | 12-17-2009 |
20100001284 | METHOD OF MANUFACTURING TRANSISTOR AND METHOD OF MANUFACTURING ORGANIC ELECTROLUMINESCENCE DISPLAY USING THE SAME - A method of manufacturing a transistor and a method of manufacturing an organic electroluminescence display are disclosed. When an amorphous silicon layer is crystallized, a silicon oxide layer formed on a polysilicon layer is subsequently patterned. Impurity ions are implanted into first and second regions of the amorphous silicon layer to form first and second doped regions. The silicon oxide layer is patterned so that the silicon oxide layer may be removed from an ohmic contact region of the polysilicon layer, and covers only a channel region of the polysilicon layer. | 01-07-2010 |
20100001285 | Semiconductor Structure and Method for Manufacturing the Same - A semiconductor structure and a method for manufacturing the same are provided. Compared to conventional structures of thin film transistors, the structure of the present invention uses a patterned first metal layer as a data line, and a patterned second metal layer as a gate line. In a thin film transistor, a gate is also located in the patterned first metal layer, and is electrically connected to the gate line located in the patterned second metal layer through a contact hole. A source and a drain of the thin film transistor are electrically connected to the data line through a contact hole. The structure of the present invention increases a storage capacitance and an aperture ratio. | 01-07-2010 |
20100001286 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND FABRICATING METHOD THEREOF - A TFT array substrate is disclosed. In the pixel structure of the TFT array substrate, patterned transparent conductive layers are disposed under a first metal layer (M | 01-07-2010 |
20100001287 | Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the same - A thin film transistor (TFT), including a crystalline semiconductor pattern on a substrate, a gate insulating layer on the crystalline semiconductor pattern, the gate insulating layer having two first source/drain contact holes and a semiconductor pattern access hole therein, a gate electrode on the gate insulating layer, the gate electrode being between the two first source/drain contact holes, an interlayer insulating layer covering the gate electrode, the interlayer insulating layer having two second source/drain contact holes therein, and source and drain electrodes on the interlayer insulating layer, each of the source and drain electrodes being insulated from the gate electrode, and having a portion connected to the crystalline semiconductor pattern through the first and second source/drain contact holes. | 01-07-2010 |
20100006851 | Thin film transistor and method of manufacturing the same - A thin film transistor comprises a substrate; a semiconductor layer disposed on the substrate, the semiconductor layer having a source region, a drain region, and a channel region between the source region and the drain region; a gate insulating layer disposed on the semiconductor layer and on the substrate; a gate electrode disposed on the insulating layer over the channel region; an passivation layer disposed on the gate electrode and the gate insulating layer; a source electrode disposed in contact with upper, lower and side surfaces of the source region via a first contact hole through passivation layer, the gate insulating layer and the semiconductor layer; and a drain electrode disposed in contact with upper, lower and side surfaces of the drain region via a second contact hole through the passivation layer, the gate insulating layer and the semiconductor layer. | 01-14-2010 |
20100006852 | Thin film transistor and method of fabricating the same - A thin film transistor includes a substrate; a semiconductor layer disposed on the substrate, the semiconductor layer having a source region, a drain region, and a channel region between the source region and the drain region; a gate insulating layer disposed on the semiconductor layer and on the substrate; and a gate electrode disposed on the insulating layer over the channel region, wherein the semiconductor layer includes tapered edge portions with a taper angle defined between the tapered edge portions and a surface of the substrate is less than about 30 degrees. | 01-14-2010 |
20100006853 | ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME - An electronic device includes: a substrate; and a plurality of thin film transistors disposed in lines at least in one direction in terms of planar view when viewed from one principal surface of the substrate; each of the plurality of thin film transistors including a preliminary heating layer on the substrate, an insulating layer on the preliminary heating layer, and a thin film semiconductor layer a part of which overlaps the preliminary heating layer through the insulating film, wherein a portion of the preliminary heating layer other than the portion overlapping the thin film semiconductor layer has a planar shape which is line-symmetrical with respect to an axis extending in a direction perpendicularly intersecting the one direction. | 01-14-2010 |
20100006854 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - In a semiconductor device, typically an active matrix display device, the structure of TFTs arranged in the respective circuits are made suitable in accordance with the function of the circuit, and along with improving the operating characteristics and the reliability of the semiconductor device, the manufacturing cost is reduced and the yield is increased by reducing the number of process steps. A semiconductor device has a semiconductor layer, an insulating film formed contacting the semiconductor layer, and a gate electrode having a tapered portion on the insulating film, in the semiconductor device, the semiconductor layer has a channel forming region, a first impurity region for forming a source region or a drain region and containing a single conductivity type impurity element, and a second impurity region for forming an LDD region contacting the channel forming region, a portion of the second impurity region is formed overlapping a gate electrode, and the concentration of the single conductivity type impurity element contained in the second impurity region becomes larger with distance from the channel forming region. | 01-14-2010 |
20100006855 | THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE THIN FILM TRANSISTOR - A thin film transistor (TFT), a method of fabricating the same, and an organic light emitting diode (OLED) display device having the TFT. The TFT includes: a substrate; a polycrystalline silicon (poly-Si) semiconductor layer disposed on the substrate, including source, drain, and channel regions, a crystallization-inducing metal, first gettering sites disposed on opposing edges of the semiconductor layer, and a second gettering site spaced apart from the first gettering sites; a gate insulating layer disposed on the semiconductor layer; a gate electrode disposed on the gate insulating layer; an interlayer insulating layer disposed on the gate electrode; and source and drain electrodes disposed on the interlayer insulating layer and electrically connected to the source and drain regions of the semiconductor layer. | 01-14-2010 |
20100006856 | PROCESS FOR MANUFACTURING A THIN-FILM TRANSISTOR (TFT) DEVICE AND TFT DEVICE MANUFACTURED BY THE PROCESS - A process for manufacturing a thin-film transistor device includes forming a dielectric insulation layer on a substrate, forming an amorphous silicon layer on the dielectric insulation layer, crystallizing the amorphous silicon layer, so as to obtain polycrystalline silicon, forming gate structures on the polycrystalline silicon, and forming first doped regions within the polycrystalline silicon laterally with respect to the gate structures. The crystallizing step includes forming first capping dielectric regions on the amorphous silicon layer, and then irradiating the amorphous silicon layer using a laser so as to form active areas of polycrystalline silicon separated by separation portions of amorphous silicon underlying the first capping dielectric regions. | 01-14-2010 |
20100012944 | THIN FILM TRANSISTOR SUBSTRATE AND THIN FILM TRANSISTOR OF DISPLAY PANEL AND METHOD OF MAKING THE SAME - A thin film transistor (TFT) formed on a transparent substrate is provided. The thin film transistor includes a patterned semiconductor layer, a gate insulating layer disposed on the patterned semiconductor layer, a gate electrode disposed on the gate insulating layer, and a patterned light-absorbing layer. The patterned semiconductor layer includes a channel region, and a source region and a drain region disposed on two opposite sides of the channel region in the pattern semiconductor layer. The patterned light-absorbing layer is disposed between the transparent substrate and the patterned semiconductor layer. | 01-21-2010 |
20100012945 | METHOD OF FORMING PHOTORESIST BURR EDGE AND METHOD OF MANUFACTURING ARRAY SUBSTRATE - A method of forming a photoresist burr edge and a method of manufacturing an array substrate are provided in the present invention. The method of manufacturing an array substrate comprises: forming a gate line and a gate electrode on a substrate; forming a data line, a source electrode, a drain electrode and a TFT channel region without removing the photoresist on the data line, the source electrode and the drain electrode; depositing a passivation layer; removing the remained photoresist and the passivation layer thereon by a lifting-off process; applying a photoresist layer; forming a photoresist burr edge of peak shape; depositing a transparent conductive film; forming a pixel electrode by a lifting-off process, wherein the pixel electrode is directly connected with the drain electrode. | 01-21-2010 |
20100012946 | TFT-LCD ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - A liquid crystal display (LCD) array substrate and a manufacturing method thereof are provided. The manufacturing method comprises depositing a semiconductor layer, a doped semiconductor layer and a metal film for source and drain electrodes sequentially on a base substrate and then forming a data line, a source electrode, a drain electrode and a thin film transistor (TFT) channel region by a first patterning process; depositing a first insulating film and a gate metal film sequentially and then forming a gate line and a gate electrode by a second patterning process and forming an insulating layer via hole in the first insulating layer above the drain electrode; depositing a transparent conductive film and then forming a pixel electrode by a third patterning process; and forming a second insulating layer. | 01-21-2010 |
20100019246 | THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a thin film transistor array panel includes; forming a gate line including a gate electrode and a height increasing member on a substrate, forming a gate insulating layer on the gate line and the height increasing member, forming a semiconductor, a data line including a source electrode, and a drain electrode facing the source electrode and overlapping at least a portion of the height increasing member on the gate insulating layer, forming a first insulating layer on the gate insulating layer, a data line and the drain electrode, forming a light-blocking member on a portion of the first insulating layer corresponding to the gate line and the data line, forming a color filter in an area bound by the light-blocking member, forming a second insulating layer on the light-blocking member and the color filter, and patterning the second insulating layer, the light-blocking member or the color filter, and the first insulating layer to form a contact hole exposing a portion of the drain electrode aligned with the height increasing member. | 01-28-2010 |
20100025691 | SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF - The present invention provides a semiconductor device having a high breakdown voltage and high reliability even if a gate electrode is formed to be thin. The present invention is a semiconductor device including a polycrystal semiconductor layer, a gate insulating film, and a gate electrode, stacked on an insulating substrate in this order, wherein the polycrystal semiconductor layer has a surface roughness of 9 nm or less, the gate insulating film has a multilayer structure including a silicon oxide film on the polycrystal semiconductor layer side and a film containing a material with a dielectric constant higher than a dielectric constant of silicon oxide on the gate electrode side. | 02-04-2010 |
20100025692 | PIXEL STRUCTURE - A pixel structure formed on a substrate and electrically connected with a scan line and a data line, and including a semiconductor pattern and a pixel electrode is provided. The semiconductor pattern includes at least two channel areas, at least one doping area, a source area, and a drain area. The channel areas are located below the scan line and have different aspect ratios. The doping area is connected between the channel areas. The pixel electrode electrically connects the drain area, the source area is connected between one of the channel areas and the data line, and the drain area is connected between the other channel area and the pixel electrode. The scan line has different widths above different channel areas, and a length of each channel area is substantially equal to the width of the scan line. | 02-04-2010 |
20100032678 | Light emitting display device and method for fabricating the same - A light emitting display device includes a first electrode formed at a light emitting region of a first substrate; a transparent oxide thin film of about 1 Å to about 200 Å in thickness formed on an entire surface of the first electrode at the light emitting region to substantially cover particle on the entire surface of the first electrode; an organic light emitting layer formed on an entire surface of the oxide thin film to emit a light; and a second electrode formed on an entire surface of the first substrate including the organic light emitting layer. | 02-11-2010 |
20100032679 | SEMICONDUCTOR DEVICE AND DISPLAY DEVICE - A thin film transistor whose threshold voltage can be controlled and which has a favorable switching characteristic is provided. The thin film transistor includes a first gate electrode layer; a semiconductor layer; a first gate insulating layer provided between the first gate electrode layer and the semiconductor layer; source electrode and drain electrode layers which are provided over the semiconductor layer; a conductive layer covered by the first gate insulating layer and the semiconductor layer and provided so as to overlap with part of the first gate electrode layer; a second gate insulating layer provided so as to cover at least a back channel portion of the semiconductor layer; and a second gate electrode layer provided over the second gate insulating layer so as to overlap with the back channel portion of the semiconductor layer. | 02-11-2010 |
20100032680 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - Provided is a display device including: a gate electrode (GT); a semiconductor film (S) which controls a current flowing between a source electrode (ST) and a drain electrode (DT), the semiconductor film including a channel region and two impurity regions formed of regions which sandwich the channel region; two Ohmic contact layers (DS) being interposed between the source electrode and the like and the two impurity regions; and an insulating film laminated on a partial region of the semiconductor film, the partial region being around a position corresponding to a substantial center of the semiconductor film, in which: the semiconductor film is formed of one of microcrystalline-silicon and polycrystalline-silicon; the two impurity regions are formed in regions on which the insulating film is absent; the two Ohmic contact layers cover the two impurity regions therewith; and the source electrode and the like cover the Ohmic contact layers therewith. | 02-11-2010 |
20100032681 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A display device includes: a transparent substrate; gate electrodes which are stacked on the transparent substrate; semiconductor films which are stacked above the gate electrodes and constitute thin film transistors together with the gate electrodes; source electrodes and drain electrodes which are formed above the semiconductor films; an insulation film which is stacked between the source electrodes and the semiconductor films and between the drain electrodes and the semiconductor films; and contact holes which are formed in the insulation film so as to connect the source electrodes and the drain electrodes with the semiconductor films. The semiconductor film includes a connection region which is positioned at least below the contact hole and is connected with the source electrode, and a connection region which is positioned at least below the contact hole and is connected with the drain electrode, and impurities are implanted into the connection regions. | 02-11-2010 |
20100038647 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - A thin film transistor substrate according to one or more embodiments of the present invention includes a gate line formed on a substrate, a data line that is insulated from and intersects the gate line, a thin film transistor connected to the gate line and the data line, a barrier rub formed on the thin film transistor and partitioning a plurality of first openings, a reflecting electrode formed in each of the first openings, and a pixel electrode formed on the reflecting electrode and that is electrically connected to the thin film transistor. | 02-18-2010 |
20100038648 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME - A thin film transistor array panel including a substrate; a display area signal line; a display area thin film transistor; a peripheral area signal line; a black matrix disposed on the display area signal line, the display area thin film transistor, and the peripheral area signal line, the black matrix including a first and a second contact holes exposing the peripheral area signal line; a protrusion member disposed on the peripheral area signal line, the protrusion member overlapping the peripheral area signal line; a transparent connector disposed on the black matrix and within the peripheral area, wherein the transparent connector contacts the peripheral area signal line through at least one of the first and the second contact holes and includes a protrusion within at least one of the first and the second contact holes which corresponds to the protrusion member; and a pixel electrode. | 02-18-2010 |
20100038649 | MOLD, MANUFACTURING METHOD OF MOLD, METHOD FOR FORMING PATTERNS USING MOLD, AND DISPLAY SUBSTRATE AND DISPLAY DEVICE MANUFACTURED BY USING METHOD FOR FORMING PATTERNS - The present invention relates to a mold, a manufacturing method of the mold, and a method of forming patterns using the mold. The mold may include a main body having a convex portion and a recess portion, and a polymer layer formed over the main body by processing a surface of the main body with a high molecular weight material through a surface treatment. | 02-18-2010 |
20100038650 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A display device includes first and second substrates, and first and second alignment keys. The first and second substrates have first and second display regions and first and second peripheral regions, respectively. The first alignment key is disposed in the first peripheral region of the first substrate. The first alignment key includes a first pattern and a second pattern. The second alignment key is disposed in the second peripheral region of the second substrate such that the second alignment key faces the first alignment key. As a result, first alignment key may be formed through a procedure of forming the pixel electrode. Therefore, there exists no deviation between the first alignment key and the pixel electrode and the first alignment key may be easily detected because of the first pattern that is opaque, so that misalignment is prevented. | 02-18-2010 |
20100038651 | SEMICONDUCTOR DEVICE INCLUDING SEMICONDUCTOR CIRCUIT MADE FROM SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREOF - In the present invention, a semiconductor film is formed through a sputtering method, and then, the semiconductor film is crystallized. After the crystallization, a patterning step is carried out to form an active layer with a desired shape. The present invention is also characterized by forming a semiconductor film through a sputtering method, subsequently forming an insulating film. Next, the semiconductor film is crystallized through the insulating film, so that a crystalline semiconductor film is formed. According this structure, it is possible to obtain a thin film transistor with a good electronic property and a high reliability in a safe processing environment. | 02-18-2010 |
20100044715 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME - A TFT array substrate including a substrate, a plurality of pixel structures and a plurality of cutting marks is provided. The substrate has a device region and a cutting mark region. The pixel structures are disposed in the device region and each pixel structure includes a TFT, a pixel electrode and a passivation layer covering the TFT. The cutting marks are within the cutting mark region, disposed at two sides of a predetermined cutting position, and are arranged as a row or column perpendicular to a predetermined cutting direction. In particular, the cutting marks are constituted of at least two colors, at least two shapes, at least one color and at least one shape, or a combination thereof. | 02-25-2010 |
20100044716 | PIXEL STRUCTURE AND LIQUID CRYSTAL DISPLAY PANEL - A pixel structure is disclosed. The pixel structure is suitable to be disposed on a substrate and includes a first pixel electrode, a second pixel electrode and a top gate TFT. The first pixel electrode and the second pixel electrode are disposed over the substrate, wherein the first pixel electrode and the second pixel electrode are separated from each other. The top gate TFT is disposed between the substrate and the first pixel electrode and includes a patterned semiconductor layer and a gate. | 02-25-2010 |
20100044717 | THIN FILM TRANSISTOR PANEL AND METHOD OF MANUFACTURING THE SAME - After forming a signal line including aluminum, an upper layer of an oxide layer including aluminum that covers the signal line is formed in the same chamber and by using the same sputtering target as the signal line, or a buffer layer of an oxide layer including aluminum is formed in a contact hole exposing the signal line during the formation of the contact hole. Accordingly, the contact characteristic between an upper layer including indium tin oxide (“ITO”) or indium zinc oxide (“IZO”) and the signal line may be improved to enhance the adhesion therebetween while not increasing the production cost of the thin film transistor (“TFT”) array panel. | 02-25-2010 |
20100051956 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME - A thin film transistor array panel includes a substrate; a first gate line disposed on the substrate and including a gate electrode; a storage electrode disposed in a layer which is the same layer as a layer of the first gate line; a gate insulating layer disposed on the first gate line and the storage electrode; a semiconductor disposed on the gate insulating layer and including a channel portion; a data line disposed on the semiconductor and including a source electrode; a drain electrode disposed on the semiconductor and facing the source electrode; a passivation layer disposed on the gate insulating layer, the data line, and the drain electrode, the passivation layer including a contact hole which exposes a portion of the drain electrode; and a pixel electrode disposed on the passivation layer and electrically connected to the drain electrode through the contact hole, wherein the gate insulating layer and the passivation layer are interposed between the pixel electrode and the substrate except for a region corresponding to the contact hole, and wherein the pixel electrode overlaps the storage electrode via the gate insulating layer and the passivation layer. | 03-04-2010 |
20100051957 | THIN FILM TRANSISTOR ARRAY PANEL - A thin film transistor array panel, in which a middle storage electrode and a storage electrode overlapping a drain electrode of a thin film transistor thereby forming a storage capacitance are formed. Accordingly, sufficient storage capacitance may be formed without a decrease of the aperture ratio and fight transmittance of a liquid crystal display. Also, the capacitance may be sufficiently formed through the connecting member connected to a gate metal layer. | 03-04-2010 |
20100051958 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A display device includes an insulation substrate on which TFT elements, first electrodes, light emitting layers and a second electrode are stacked in this order. Auxiliary lines are arranged between the insulation substrate and the second electrodes, and an insulation layer is interposed between the auxiliary lines and the second electrode. The auxiliary lines and the second electrode are connected with each other via contact holes formed in the insulation layer. Due to such a constitution, it is possible to enhance image quality of an organic EL display device. | 03-04-2010 |
20100051959 | CIRCUIT BOARD AND DISPLAY DEVICE - The present invention provides a circuit board that includes high-performance thin film transistors whose characteristics are hardly varied thereamong in a monolithic circuit and also provide a display device including the circuit board. The circuit board of the present invention is a circuit board including a monolithic circuit including a thin film transistor on a substrate, wherein the thin film transistor includes a semiconductor layer, a gate insulating film, and a gate electrode, stacked in this order, a portion where the gate electrode overlaps with the semiconductor layer has an area of 40 μm | 03-04-2010 |
20100059757 | APPARATUS AND METHOD OF MANUFACTURING THE SAME - An apparatus includes a substrate having a plurality of pixels, wherein the substrate comprises a concave-convex surface and a cured adhesive layer formed on the concave-convex surface. | 03-11-2010 |
20100059758 | PIXEL STRUCTURE OF A DISPLAY PANEL - A tri-gate pixel structure includes three sub-pixel regions, three gate lines, a data line, three thin film transistors (TFTs), three pixel electrodes, and a common line. The gate lines are disposed along a first direction, and the data line is disposed along a second direction. The TFTs are disposed in the sub-pixel regions respectively, wherein each TFT has a gate electrode electrically connected to a corresponding gate line, a source electrode electrically connected to the data line, and a drain electrode. The three pixel electrodes are disposed in the three sub-pixel regions respectively, and each pixel electrode is electrically connected to the drain electrode of one TFT respectively. The common line crosses the gate lines and partially overlaps the three gate lines, and the common line and the three pixel electrodes are partially overlapped to respectively form three storage capacitors. | 03-11-2010 |
20100065849 | ORGANIC LIGHT EMITTING DISPLAY AND FABRICATION METHOD OF THE SAME - Disclosed is an organic light emitting display. In the organic light emitting display, a substrate is divided into a display region, in which an image is displayed, and a non-display region surrounding the display region. The organic light emitting display includes a plurality of pixels provided on the display region. At least one thin film transistor is formed on the non-display region. The display region includes a first electrode connected to the thin film transistor, an organic light emitting layer formed on the first electrode, and a second electrode formed on the organic light emitting layer to apply voltage to the organic light emitting layer with the first electrode. A light blocking layer having an opening formed below the semiconductor layer is formed on the non-display region. | 03-18-2010 |
20100065850 | ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - An array substrate includes a substrate including a display area and a peripheral area surrounding the display area, a transistor layer formed in the display area of the substrate and electrically connected to a gate line and a data line, a color filter formed in a pixel region on the transistor layer, a first light blocking member disposed between adjacent color filters, a first transparent member formed on the first light blocking member to cover the first light blocking member, a first color pattern formed in a peripheral area of the substrate and including substantially the same material as the color filter, and a second transparent member including substantially the same material as the first transparent member. The second transparent member is disposed in the peripheral area of the substrate to cover the first color pattern. | 03-18-2010 |
20100065851 | SEMICONDUCTOR DEVICE, AND ITS MANUFACTURING METHOD - A semiconductor device | 03-18-2010 |
20100065852 | SYSTEM FOR DISPLAYING IMAGES AND FABRICATING METHOD THEREOF - A system for displaying images and fabricating method thereof are provided. The system includes a thin film transistor substrate including a substrate having a display area and a pad area. The thin film transistor substrate further includes a conductive line disposed on the substrate in the display area. The conductive line includes a lower metal line, an upper metal line and a middle metal line therebetween. The width of the middle metal line is narrower than that of the upper metal line. | 03-18-2010 |
20100072481 | Method and Resulting Structure Using Silver for LCOS Devices - A method for fabricating an LCOS device. The method includes providing a semiconductor substrate and forming a plurality of MOS transistor devices formed on a portion of the semiconductor substrate. The method includes forming a first dielectric layer overlying the plurality of transistor devices and forming a first metal layer overlying the first dielectric layer. The method includes forming a second dielectric layer overlying the first metal layer and forming a plurality of pixel regions made substantially of silver bearing material overlying the second dielectric layer. In a preferred embodiment, the silver bearing material has much higher reflectivity for wavelengths of 450 nanometers and greater. | 03-25-2010 |
20100072482 | ORGANIC LIGHT EMITTING DISPLAY AND METHOD OF MANUFACTURING THE SAME - Disclosed are an organic light emitting display and a method of manufacturing the same. The organic light emitting includes a first substrate, a first electrode, an organic light emitting layer, and a second electrode. The first substrate includes a pixel region showing an image and a peripheral region surrounding the pixel region. The first electrode is formed in the pixel region of the first substrate. The organic light emitting layer is formed on the first electrode. The second electrode is formed on the organic light emitting layer and extends to the peripheral region. An auxiliary electrode is formed on the second electrode to contact the second electrode on an entire surface of the first substrate, thereby applying a voltage having the same voltage level as that of the second electrode. | 03-25-2010 |
20100072483 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME - A thin film transistor array panel according to the present invention includes: a gate line formed on a substrate and including a gate electrode; a gate insulating layer formed on the gate electrode; a mold layer formed on the gate insulating layer and having an opening overlapping the gate electrode; a semiconductor layer filled in the opening; a data line formed on the mold layer and including a source electrode contacted with the semiconductor layer; a drain electrode contacted with the semiconductor layer on the mold layer and facing the source electrode; a passivation layer formed on the data line and the drain electrode; and a pixel electrode formed on the passivation layer and connected to the drain electrode, wherein the passivation layer, the source electrode, and the drain electrode have at least one through-hole connected to the opening. | 03-25-2010 |
20100078646 | DISPLAY DEVICE - A display device including an active area having a plurality of pixels comprises an array substrate including a plurality of display elements disposed at said pixels respectively; a sealing substrate disposed to be opposed to said array substrate; and a seal member disposed between said array substrate and said sealing substrate and encircling said active area; wherein said seal member is made of frit glass, and a resin layer is disposed between said array substrate and said sealing substrate in said active area. | 04-01-2010 |
20100078647 | THIN FILM TRANSISTOR SUBSTRATE AND ORGANIC LIGHT EMITTING DISPLAY HAVING THE SAME - In an organic light emitting display, a switching transistor includes an active pattern having a crystal structure grown at an angle of 0°±10° relative to a current flow direction, and a driving transistor includes an active pattern having a crystal structure grown at an angle of 90°±10° relative to a current flow direction. As a result, the driving transistor more precisely controls intensity of supply voltage applied to an organic light emitting layer. | 04-01-2010 |
20100084661 | DISPLAY SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY APPARATUS HAVING THE SAME - The present invention relates to a display substrate in which sound devices serving as speakers or a microphones are built, and the display substrate includes a substrate including a sound processing area and a display area, a plurality of sound devices arranged in the sound processing area, and a plurality of pixels arranged in the display area. The sound devices may be formed on the substrate together with the pixels using a same manufacturing process as that used to form the pixels. | 04-08-2010 |
20100090224 | THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE HAVING THE THIN FILM TRANSISTOR - A thin film transistor (TFT), a method of fabricating the same, and an organic light emitting diode (OLED) display device having the TFT, the TFT includes a substrate, a protection layer disposed on the substrate, a buffer layer disposed on the protection layer, a semiconductor layer disposed on the buffer layer, a gate electrode disposed on the semiconductor layer, a gate insulating layer to electrically insulate the semiconductor layer from the gate electrode, and source and drain electrodes electrically insulated from the gate electrode and connected to the semiconductor layer. The protection layer is formed of an amine-containing clay. The OLED includes the TFT, an insulating layer disposed on the TFT, a first electrode connected to the drain electrode of the TFT, an organic layer disposed on the first electrode, and a second electrode disposed on the organic layer. | 04-15-2010 |
20100096638 | THIN FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY APPARATUS HAVING THE SAME - A thin film transistor substrate that includes a substrate, first and second gate electrodes that are formed on the substrate, a gate insulating layer that is formed on the first and second gate electrodes, a first semiconductor and a second semiconductor that are formed on the gate insulating layer, and that overlap the first gate electrode and the second gate electrode, respectively, a first source electrode and a first drain electrode that are formed on the first semiconductor, and positioned opposed to and spaced from each other, a source electrode connected to the first drain electrode and a second drain electrode positioned opposed to and spaced from the second source electrode, wherein the second source and second drain electrodes are formed on the second semiconductor, and a pixel electrode that is electrically connected to the second drain electrode, a method of manufacturing the same, and a display apparatus having the same. | 04-22-2010 |
20100096639 | ACTIVE MATRIX SUBSTRATE - The active-matrix substrate ( | 04-22-2010 |
20100109013 | Thin film transistor, method of manufacturing the same, and organic light emitting diode display device including the same - A thin film transistor for an organic light emitting diode includes a substrate including a pixel portion and an interconnection portion, a buffer layer on the substrate, a gate electrode and a gate interconnection on the buffer layer, wherein the gate electrode is located at the pixel portion and the gate interconnection is located at the interconnection portion, a gate insulating layer on the substrate, a semiconductor layer on the gate electrode, source and drain electrodes electrically connected to the semiconductor layer, and a metal pattern on the gate interconnection. | 05-06-2010 |
20100109014 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A display device includes: a conductive layer on which gate electrodes are formed; a first insulation layer which is formed on the conductive layer; a semiconductor layer which is formed on the first insulation layer and is provided for forming semiconductor films which contain poly-crystalline silicon above the gate electrodes; and a second insulation layer which is formed on the semiconductor layer. Here, the semiconductor film includes a channel region which overlaps with the gate electrode as viewed in a plan view. In the channel region, a portion of the semiconductor film which is in contact with the second insulation layer exhibits higher impurity concentration than a portion of the semiconductor film which is in contact with the first insulation layer. | 05-06-2010 |
20100117090 | ARRAY SUBSTRATE INCLUDING THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME - A method of fabricating an array substrate includes: forming a gate line and a gate electrode connected to the gate line; forming a gate insulating layer on the gate line and the gate insulting layer; sequentially forming an intrinsic amorphous silicon pattern and an impurity-doped amorphous silicon pattern on the gate insulating layer over the gate electrode; forming a data line on the gate insulating layer and source and drain electrodes on the impurity-doped amorphous silicon pattern, the data line crossing the gate line to define a pixel region, and the source and drain electrodes spaced apart from each other; removing a portion of the impurity-doped amorphous silicon pattern exposed through the source and drain electrodes to define an ohmic contact layer; irradiating a first laser beam onto the intrinsic amorphous silicon pattern through the source and drain electrode to form an active layer including a first portion of polycrystalline silicon and a second portion of amorphous silicon at both sides of the first portion; forming a passivation layer on the data line, the source electrode and the drain electrode, the passivation layer having a drain contact hole exposing the drain electrode; and forming a pixel electrode on the passivation layer in the pixel region, the pixel electrode connected to the drain electrode through the drain contact hole. | 05-13-2010 |
20100117091 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A display device having thin film transistors which can acquire an appropriate ON current and an appropriate OFF current and a manufacturing method thereof are provided. A display device includes: a transparent substrate; and a plurality of thin film transistors which are formed on the transparent substrate. Each thin film transistor includes a gate electrode which is stacked on the transparent substrate, a source electrode and a drain electrode which are stacked over the gate electrode, a first semiconductor film which is stacked between the gate electrode, and the source electrode and the drain electrode so as to control an electric current which flows between the source electrode and the drain electrode, an insulation film which is stacked on the first semiconductor film in a contacting manner in a state where a source-electrode-side edge portion and a drain-electrode-side edge portion of the first semiconductor film are exposed, and a second semiconductor film and a third semiconductor film which are stacked between the source-electrode-side edge portion and the source electrode T as well as between the drain-electrode-side edge portion and the drain electrode. The third semiconductor film is connected with the source electrode and the drain electrode by an ohmic contact. The second semiconductor film is formed below the third semiconductor film with resistance higher than resistance of the third semiconductor film. | 05-13-2010 |
20100117092 | SEMICONDUCTOR DEVICE - In a conventional analog buffer circuit composed of polycrystalline semiconductor TFTs, a variation in the output is large. Thus, a measure such as to provide a correction circuit has been taken. However, there has been such a problem that a circuit and driver operation are complicated. Therefore, a gate length and a gate width of a TFT composing an analog buffer circuit is set to be larger. Also, a multi-gate structure is adopted thereto. In addition, the arrangement of channel regions is devised. Thus, the analog buffer circuit having a small variation is obtained without using a correction circuit, and a semiconductor device having a small variation can be provided. | 05-13-2010 |
20100117093 | LASER IRRADIATION DEVICE, PATTERNING METHOD AND METHOD OF FABRICATING ORGANIC LIGHT EMITTING DISPLAY (OLED) USING THE PATTERNING METHOD - In a laser irradiation device, a patterning method and a method of fabricating an Organic Light Emitting Display (OLED) using the same. The laser irradiation device includes a light source, a mask, a projection lens, and a Fresnel lens formed at a predetermined portion of the mask to change an optical path. When an organic layer pattern is formed using the laser irradiation device, laser radiation is irradiated onto a region of an organic layer, which is to be cut, and the laser radiation is appropriately irradiated onto a region of the organic layer, which is to be separated from a donor substrate. The laser radiation irradiated onto an edge of the organic layer pattern has a laser energy density greater than that of the laser radiation irradiated onto other portions of the organic layer pattern. As a result, it is possible to form a uniform organic layer pattern and reduce damage of the organic layer. | 05-13-2010 |
20100123138 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a display device includes forming a gate electrode on a substrate, a gate insulating layer on the gate electrode, and an active layer on the gate insulating layer, the gate electrode made of extrinsic polycrystalline silicon, the active layer made of intrinsic polycrystalline silicon; forming an etch stopper on the active layer; forming source and drain electrodes spaced apart from each other on the etch stopper; forming an ohmic contact layer each between a side of the active layer and the source electrode and between an opposing side of the active layer and the drain electrode; forming a gate line connected to the gate electrode; and forming a data line crossing the gate line. | 05-20-2010 |
20100127271 | ELECTRONIC CIRCUIT STRUCTURE AND METHOD FOR FORMING SAME - A thin film transistor (TFT) structure is implemented. This embodiment is much less sensitive than conventional TFTs to alignment errors and substrate distortion. In such a configuration, there is no need to define gate features, so the layout is simplified. Moreover, the gate layer may be patterned by several inexpensive printing or non-printing methods. | 05-27-2010 |
20100127272 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - A thin film transistor array panel according to the present invention includes: a gate line formed on a substrate; a data line insulated from and intersecting the gate line; a thin film transistor connected to the gate line and the data line; a light blocking layer formed on the thin film transistor and having a first transmitting window; a reflection layer formed on the light blocking layer and a second transmitting window overlapping the first transmitting window; a color filter formed in the first transmitting window and the second transmitting window and on the reflection layer; and a pixel electrode formed on the color filter and overlapping the second transmitting window, wherein the reflection layer includes protrusions and depressions corresponding to a portion of the pixel area defined by the gate line and data line. | 05-27-2010 |
20100127273 | Light emitting device and manufacturing method thereof and light emitting display and manufacturing method thereof - The present invention provides a light emitting device comprising a substrate comprising a thin film transistor, a first electrode formed on the substrate and electrically connected to the thin film transistor, a light emitting part formed on the first electrode; | 05-27-2010 |
20100133545 | THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME - A thin film transistor includes a multi-coaxial silicon nanowire unit including a plurality of coaxial silicon nanowires on a substrate, the multi-coaxial silicon nanowire unit including a central portion and end portions of the central portion; a gate electrode on the central portion; and a source electrode and a drain electrode on the respective end portions, respectively, so as to electrically connect to the multi-coaxial silicon nanowire unit. | 06-03-2010 |
20100133546 | System and Method for Manufacturing Thick and Thin Film Devices Using a Donee Layer Cleaved From a Crystalline Donor - Various embodiments of fabricated crystalline-based structures for the electronics, optoelectronics and optics industries are disclosed. Each of these structures is created in part by cleaving a donee layer from a crystalline donor, such as a micaceous/lamellar mass comprising a plurality of lamelliform sheets separable from each other along relatively weak cleavage planes. Once cleaved, one or more of these lamelliform sheets become the donee layer. The donee layer may be used for a variety of purposes, including a crystalline layer for supporting heteroepitaxial growth of one or more semiconductor layers thereon, an insulating layer, a barrier layer, a planarizing layer and a platform for creating useful structures, among others. | 06-03-2010 |
20100148182 | THIN FLIM TRANSISTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF - A thin film transistor (TFT) substrate is provided in which a sufficiently large contact area between conductive materials is provided in a contact portion and a method of fabricating the TFT substrate. The TFT substrate includes a gate interconnection line formed on an insulating substrate, a gate insulating layer covering the gate interconnection line, a semiconductor layer arranged on the gate insulating layer, a data interconnection line including a data line, a source electrode and a drain electrode formed on the semiconductor layer, a first passivation layer formed on the data interconnection line and exposing the drain electrode, a second passivation layer formed on the first passivation film and a pixel electrode electrically connected to the drain electrode. An outer sidewall of the second passivation layer is positioned inside an outer sidewall of the first passivation layer. | 06-17-2010 |
20100155736 | THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE HAVING THE THIN FILM TRANSISTOR - A thin film transistor (TFT), a method of fabricating the same, and an organic light emitting diode (OLED) display device including the TFT. The TFT includes a substrate having a pixel region and a non-pixel region, a semiconductor layer, a gate insulating layer, a gate electrode, and source and drain electrodes disposed on the pixel region, at least one gettering site disposed on the non-pixel region, and at least one connection portion to connect the at least one gettering site and the semiconductor layer The method of fabricating the TFT includes patterning a polycrystalline silicon (poly-Si) layer to form a plurality of semiconductor layers, connection portions, and at least one gettering site, the semiconductor layers being connected to the at least one gettering site via the connection portions, and annealing the substrate to getter the plurality of semiconductor layers. | 06-24-2010 |
20100155737 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A purpose of the invention is to provide a method for leveling a semiconductor layer without increasing the number and the complication of manufacturing processes as well as without deteriorating a crystal characteristic, and a method for leveling a surface of a semiconductor layer to stabilize an interface between the surface of the semiconductor layer and a gate insulating film, in order to achieve a TFT having a good characteristic. In an atmosphere of one kind or a plural kinds of gas selected from hydrogen or inert gas (nitrogen, argon, helium, neon, krypton and xenon), radiation with a laser beam in the first, second and third conditions is carried out in order, wherein the first condition laser beam is radiated for crystallizing a semiconductor film or improving a crystal characteristic; the second condition laser beam is radiated for eliminating an oxide film; and the third condition laser beam is radiated for leveling a surface of the crystallized semiconductor film. | 06-24-2010 |
20100163885 | THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE THIN FILM TRANSISTOR - A thin film transistor (TFT) includes a substrate, a semiconductor layer disposed on the substrate and including source and drain regions, each having a first metal catalyst crystallization region and a second metal catalyst crystallization region, and a channel region having the second metal catalyst crystallization region, a gate electrode disposed in a position corresponding to the channel region of the semiconductor layer, a gate insulating layer interposed between the semiconductor layer and the gate electrode to electrically insulate the semiconductor layer from the gate electrode, and source and drain electrodes electrically insulated from the gate electrode and electrically connected to the source and drain regions, respectively. An OLED display device includes the thin film transistor and a first electrode, an organic layer, and a second electrode electrically connected to the source and drain electrodes. | 07-01-2010 |
20100171123 | DISPLAY APPARATUS AND MANUFACTURING METHOD THEREOF - A display apparatus includes a gate electrode, a first insulating layer pattern formed over the gate electrode, a second insulating layer pattern formed over the first insulating layer pattern, exposing a portion of the first insulating layer, a semiconductor film pattern formed over the second insulating layer pattern and over the first insulating layer pattern, an impurity-doped semiconductor film pattern formed on the semiconductor film pattern, wherein the impurity-doped semiconductor film pattern contacts the top surface of the semiconductor film pattern and exposes a portion of the semiconductor film pattern formed over the gate electrode, a source electrode and a drain electrode each formed over a portion of the impurity doped semiconductor film pattern, a protection film pattern formed over the source electrode and the drain electrode in a TFT area, the protection film pattern having a contact hole over the drain electrode, a pixel electrode pattern formed on the protection film pattern and_electrically connected to the drain electrode. | 07-08-2010 |
20100176402 | THIN FILM TRANSISTOR SUBSTRATE, ELECTRONIC APPARATUS, AND METHODS FOR FABRICATING THE SAME - A TFT substrate includes a substrate and at least a TFT disposed thereon. The TFT includes a semiconductor island and at least a gate. The semiconductor island has a source region, a drain region, and a channel region interposed therebetween. The semiconductor island has sub-grain boundaries. The gate corresponds to the channel region. A first included angle between an extending direction of the gate and a line connecting the centroid of the source region with the centroid of the drain region is not substantially equal to 90 degrees. A second included angle between the sub-grain boundaries in the channel region and the line connecting the centroid of the source region with the centroid of the drain region is not substantially equal to 0 degree or 90 degrees. Additionally, a method of fabricating a TFT substrate, an electronic apparatus, and a method of fabricating the electronic apparatus are also provided. | 07-15-2010 |
20100181574 | THIN FILM TRANSISTOR DEVICES WITH DIFFERENT ELECTRICAL CHARACTERISTICS AND METHOD FOR FABRICATING THE SAME - A system for displaying images. The system includes a thin film transistor (TFT) device including a first insulating layer covering a first region and a second region of a substrate. A first polysilicon active layer is disposed in the first region and between the substrate and the first insulating layer. A second polysilicon active layer is disposed on the first insulating layer in the second region. A polysilicon gate layer is disposed above the first polysilicon active layer. A second insulating layer covers the polysilicon gate layer and the second polysilicon active layer. A metal gate layer is disposed above the second polysilicon active layer. A method for fabricating the system for displaying images including the TFT device is also disclosed. | 07-22-2010 |
20100181575 | SEMICONDUCTOR DEVICE PROVIDED WITH THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE - A semiconductor device includes at least one thin-film transistor | 07-22-2010 |
20100187537 | Thin Film Transistor Array Substrate and Method for Manufacturing the Same - A thin film transistor array structure and a method for manufacturing the same are provided. The thin film transistor array structure comprises a substrate, including a transition area and a pad area. A patterned first metal layer is formed on the substrate, wherein the patterned first metal layer includes a data connecting line disposed in the transition area, and a data pad and a gate pad disposed in the pad area. A patterned first insulation layer is formed on the patterned first metal layer. The patterned first insulation layer at least defines a first opening on the gate pad, a second opening on the data pad, and a third opening in the transition area, so as to simplify following processes to increase the yield. | 07-29-2010 |
20100187538 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME - A thin film transistor array panel according to the present invention includes: an insulation substrate having a display area and a peripheral area; a plurality of thin film transistors disposed in the display area; a plurality of gate lines connected to the thin film transistors; a plurality of data lines connected to the thin film transistors; a driving unit disposed in the peripheral area of the insulation substrate, and controlling the thin film transistor; a plurality of signal lines connecting between the driving unit and the gate lines or the data lines; and a dummy pattern overlapping the signal line and made of a transparent conductive material. | 07-29-2010 |
20100200861 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD OF MANUFACTURING THE SAME - An organic light emitting diode display and a method of manufacturing the display, the organic light emitting diode display including: a substrate; a semiconductor layer formed on the substrate, having a channel region, a source region, and a drain region; a gate insulating layer covering the semiconductor layer; a gate electrode formed on the channel region; and an interlayer insulating layer covering the gate electrode. Source and drain electrodes are formed on the interlayer insulating layer, and are connected to the source and drain regions, respectively. A pixel electrode extends from the drain electrode, in the same plane as the source and drain electrodes. The source and drain electrodes each have a first conductive layer formed of a transparent conductive material, and a metallic second conductive layer formed on the first conductive layer. The pixel electrode is formed from the first conductive layer. | 08-12-2010 |
20100200862 | LIQUID CRYSTAL DISPLAY DEVICE AND FABRICATING METHOD THEREOF - A liquid crystal display device may comprise a semiconductor layer on a substrate and including a channel portion and ohmic contact portions at both sides of the channel portion, wherein an edge portion of the semiconductor layer has a side surface of a substantially tapered shape; a gate insulating layer covering the semiconductor layer; a gate electrode on the gate insulating layer and substantially corresponding to the channel portion; source and drain electrodes contacting the semiconductor layer; and a pixel electrode contacting the drain electrode. | 08-12-2010 |
20100213466 | PHOTOSENSORS INCLUDING SEMICONDUCTOR-ON-INSULATOR STRUCTURE - Photosensor based on SOI technology and display devices comprising the same. The photosensor can be a photodiode or a phototransistor, or a combination thereof when incorporated in a device. The photosensor exhibits a higher photoresponse than a traditional photosensor based on amorphous silicon film or polysilicon thin film technology. The present invention is useful, e.g., in making multifunctional display devices having photosensing function integrated therein. | 08-26-2010 |
20100219415 | TRANSISTOR, FABRICATING METHOD THEREOF AND FLAT PANEL DISPLAY THEREWITH - A transistor includes a substrate, an active region including a source region, a channel region, and a drain region which are crystallized using an SGS crystallization method and are formed on the substrate so that a grain size of a first annealed portion and a second annealed portion are different from each other, a gate insulating layer formed on the active region, and a gate electrode formed on the gate insulating layer. | 09-02-2010 |
20100224882 | THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE HAVING THE SAME - A thin film transistor, a method of fabricating the same, and an organic light emitting diode display device having the same, the thin film transistor including: a substrate; a silicon layer formed on the substrate; a diffusion layer formed on the silicon layer; a semiconductor layer that is crystallized using a metal catalyst, formed on the diffusion layer; a gate electrode disposed on the diffusion layer, facing a channel region of the semiconductor layer; a gate insulating layer disposed between the gate electrode and the semiconductor layer; and source and drain electrodes electrically connected to source and drain regions of the semiconductor layer. | 09-09-2010 |
20100224883 | THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE SAME - A thin film transistor (TFT) and an organic light emitting diode (OLED) display device. The TFT and the OLED display device include a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate electrode insulated from the semiconductor layer, a gate insulating layer insulating the semiconductor layer from the gate electrode, and source and drain electrodes insulated from the gate electrode and partially connected to the semiconductor layer, wherein the semiconductor layer is formed from a polycrystalline silicon layer crystallized by a metal catalyst and the metal catalyst is removed by gettering using an etchant. In addition, the OLED display device includes an insulating layer disposed on the entire surface of the substrate, a first electrode disposed on the insulating layer and electrically connected to one of the source and drain electrodes, an organic layer, and a second electrode. | 09-09-2010 |
20100237355 | THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THIN FILM TRANSISTOR, AND DISPLAY DEVICE - A thin film transistor with a large on-current and a reduced off-current is provided with high fabrication efficiency. | 09-23-2010 |
20100244036 | THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE SAME - A thin film transistor, a method of fabricating the same, and an organic light emitting diode (OLED) display device including the same. The thin film transistor includes a substrate; a semiconductor layer disposed on the substrate and including a channel region; source/drain regions including ions and an offset region; a gate insulating layer disposed on the semiconductor layer; a gate electrode disposed on the gate insulating layer; a first insulating layer disposed on the gate electrode; a second insulating layer disposed on the first insulating layer; and source/drain electrodes disposed on the second insulating layer, and electrically connected to the source/drain regions of the semiconductor layer, respectively. The sum of thicknesses of the gate insulating layer and the first insulating layer that are on the source/drain regions is less than the vertical dispersion depth of the ions included in the source/drain regions. | 09-30-2010 |
20100244037 | THIN FILM TRANSISTOR, ITS MANUFACTURING METHOD, AND LIQUID CRYSTAL DISPLAY PANEL AND ELECTRONIC DEVICE USING SAME - A thin film transistor (TFT) is provided which is capable of reducing leakage currents in a polycrystalline silicon TFT without causing an increase in manufacturing processes. Source/drain regions of an activated layer of the TFT to be formed in a circuit region and pixel region formed on a glass substrate of a liquid crystal display panel for a mobile phone is formed so that its boron impurity falls within a range of 2.5×10 | 09-30-2010 |
20100244038 | THIN FILM TRANSISTOR AND FABRICATING METHOD OF THE SAME - Provided are thin film transistor, a method of fabricating the same, a flat panel display device including the same, and a method of fabricating the flat panel display device, that are capable of applying an electric field to a gate line to form a channel region of a semiconductor layer of a thin film transistor using a polysilicon layer crystallized by a high temperature heat generated by Joule heating of a conductive layer. As a result, a process can be simplified using a gate line included in the thin film transistor as the conductive layer, and the channel region of the semiconductor layer can be formed of polysilicon having a uniform degree of crystallinity. The thin film transistor includes a straight gate line disposed in one direction, a semiconductor layer crossing the gate line, and source and drain electrodes connected to source and drain regions of the semiconductor layer. | 09-30-2010 |
20100244039 | PIXEL STRUCTURE - A pixel structure includes a patterned semiconductor layer disposed on a transistor region of the substrate, a first capacitor electrode disposed on a capacitor region of the substrate, a gate dielectric layer disposed on the first capacitor electrode, a gate disposed on a channel region of the patterned semiconductor layer, a second capacitor electrode, a dielectric layer, and an aluminum capacitor electrode sequentially disposed on the gate dielectric layer of the capacitor region, a first dielectric layer disposed on the gate and the aluminum capacitor electrode, at least one first wire disposed in the first dielectric layer for electrically connecting source/drain region of the patterned semiconductor layer and the aluminum capacitor electrode, a second dielectric layer disposed on the first wire, and a first transparent conductive layer disposed on the second dielectric layer and connected to the first wire. | 09-30-2010 |
20100258811 | Semiconductor Device and Method of Manufacturing the Same - In manufacturing a semiconductor device, static electricity is generated while contact holes are formed in an interlayer insulating film by dry etching. Damage to a pixel region or a driving circuit region due to travel of the static electricity generated is prevented. Gate signal lines are spaced apart from each other above a crystalline semiconductor film. Therefore a first protective circuit is not electrically connected when contact holes are opened in an interlayer insulating film. The static electricity generated during dry etching for opening the contact holes moves from the gate signal line, damages a gate insulating film, passes the crystalline semiconductor film, and again damages the gate insulating film before it reaches the gate signal line. As the static electricity generated during the dry etching damages the first protective circuit, the energy of the static electricity is reduced until it loses the capacity of damaging a driving circuit TFT. The driving circuit TFT is thus prevented from suffering electrostatic discharge damage. | 10-14-2010 |
20100264422 | Thin film semiconductor device, display device using such thin film semiconductor device and manufacturing method thereof - A thin film semiconductor device formed as integrated circuits on an insulating substrate with bottom gate type thin film transistors stacked with gate electrodes, a gate insulating film and a semiconductor thin film in the order from below upward. The gate electrodes comprise metallic materials with thickness less than 100 nm. The gate insulating film has a thickness thicker than the gate electrodes. The semiconductor thin film comprises polycrystalline silicon crystallized by a laser beam. By reducing thickness of metallic gate electrodes, thermal capacity becomes small and difference in thermal condition on the metallic gate electrodes and on the insulating substrate made of glass or the like becomes small. This invention relates to the task of uniforming and optimizing recrystallization by a laser anneal treatment provided for the semiconductor thin film which works as an active layer of the bottom gate type thin film transistors. | 10-21-2010 |
20100276694 | DISPLAY DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC DEVICE HAVING THE SAME - In a case where a p-channel thin film transistor is used as a thin film transistor that is electrically connected to a light-emitting element and drives the light-emitting element, a value of cutoff current of the p-channel thin film transistor is made lower than that of a p-channel thin film transistor of a driver circuit. Specifically, channel doping is selectively performed on a semiconductor layer of a thin film transistor included in a pixel. | 11-04-2010 |
20100276695 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - It is an object of the present invention to prevent an influence of voltage drop due to wiring resistance, trouble in writing of a signal into a pixel, and trouble in gray scales, and provide a display device with higher definition, represented by an EL display device and a liquid crystal display device. | 11-04-2010 |
20100276696 | Semiconductor Device and Method of Fabricating the Same - An active matrix display device having a pixel structure in which pixel electrodes, gate wirings and source wirings are suitably arranged in the pixel portions to realize a high numerical aperture without increasing the number of masks or the number of steps. The device comprises a gate electrode and a source wiring on an insulating surface, a first insulating layer on the gate electrode and on the source wiring, a semiconductor layer on the first insulating film, a second insulating layer on the semiconductor film, a gate wiring connected to the gate electrode on the second insulating layer, a connection electrode for connecting the source wiring and the semiconductor layer together, and a pixel electrode connected to the semiconductor layer. | 11-04-2010 |
20100289028 | ELECTRONIC DEVICE, DISPLAY DEVICE, INTERFACE CIRCUIT AND DIFFERENTIAL AMPLIFICATION DEVICE, WHICH ARE CONSTITUTED BY USING THIN-FILM TRANSISTORS - An integrated circuit, which is configured such that a MOS transistor and a bipolar transistor are integrated at the same time, is formed on an insulating substrate which includes a display device. An electronic device or a display includes a plurality of semiconductor devices which are formed by using a semiconductor thin film and are formed in the semiconductor thin film that is provided on an insulating substrate and is crystallized in a predetermined direction. The plurality of semiconductor devices include a MOS transistor and at least either one of a lateral bipolar thin-film transistor and a MOS-bipolar hybrid thin film transistor. | 11-18-2010 |
20100295053 | THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY DEVICE - The present invention provides a thin film transistor substrate and a display device in which a decrease in the dry etching rate of a source electrode and drain electrode is not caused; no etching residues are generated; and a barrier metal can be eliminated between a semiconductor layer and metal wires such as the source and drain electrodes. The present invention is a thin film transistor substrate having a semiconductor layer | 11-25-2010 |
20100301346 | THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPLIANCE - A thin film transistor in which an effect of photo current is small and an On/Off ratio is high is provided. In a bottom-gate bottom-contact (coplanar) thin film transistor, a channel formation region overlaps with a gate electrode, a first impurity semiconductor layer is provided between the channel formation region and a second impurity semiconductor layer which is in contact with a wiring layer. A semiconductor layer which serves as the channel formation region and the first impurity semiconductor layer preferably overlap with each other in a region where they overlap with the gate electrode. The first impurity semiconductor layer and the second impurity semiconductor layer preferably overlap with each other in a region where they do not overlap with the gate electrode. | 12-02-2010 |
20100327289 | FLAT DISPLAY PANEL, UV SENSOR AND FABRICATION METHOD THEREOF - A UV sensor comprises a silicon-rich dielectric layer with a refractive index in a range of about 1.7 to about 2.5 for serving as the light sensing material of the UV sensor. The fabrication method of the UV sensor can be integrated with the fabrication process of semiconductor devices or flat display panels. | 12-30-2010 |
20100327290 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF DISPLAY DEVICE, SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND ELECTRONIC DEVICE - A method for manufacturing a semiconductor device provided with a circuit capable of high speed operation while the manufacturing cost is reduced. A method for manufacturing a semiconductor device which includes forming an ion-doped layer at a predetermined depth from a surface of a single-crystal semiconductor substrate and forming a first insulating layer over the single-crystal semiconductor substrate; forming a second insulating layer over part of an insulating substrate and forming a non-single-crystal semiconductor layer over the second insulating layer; bonding the single-crystal semiconductor substrate to a region of the insulating substrate where the second insulating layer is not formed, with the first insulating layer interposed therebetween; and forming a single-crystal semiconductor layer over the insulating substrate by separating the single-crystal semiconductor substrate at the ion-doped layer which acts as a separation surface so that the ion-doped layer is separated from the insulating substrate. | 12-30-2010 |
20110006306 | LIGHT EMITTING DEVICE - A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving. | 01-13-2011 |
20110012124 | Metal-Induced Crystallization of Amorphous Silicon in Thin Film Transistors - The invention provides a method for forming thin film transistors including a polycrystalline semiconducting film. The method comprises depositing a first layer of amorphous semiconducting thin film on to a substrate; depositing a second layer of thin film on to the first layer of amorphous semiconducting thin film; patterning the second layer of thin film so that the first layer of amorphous semiconducting thin film is exposed at selected locations; exposing the first and second layers of thin film to a nickel containing compound in either a solution or a vapor phase ; removing the second layer of thin film; and annealing the first layer of amorphous semiconducting thin film at an elevated temperature so the first layer of amorphous semiconducting thin film converts into a polycrystalline semiconducting thin film. | 01-20-2011 |
20110012125 | THIN FILM TRANSISTOR AND ACTIVE MATRIX DISPLAY - A thin film transistor is formed in a semiconductor island on an insulating substrate. The transistor comprises a source ( | 01-20-2011 |
20110017999 | Array substrate and method of fabricating the same - An array substrate includes first and second gate electrodes on a substrate; a gate insulating layer on the first and second gate electrodes; first and second active layers on the gate insulating layer; an interlayer insulating layer on the first and second active layers; first to fourth ohmic contact layers respectively contacting both sides of the first active layer and both sides of the second active layer; first and second source electrodes and first and second drain electrodes respectively on the first, third, second and fourth ohmic contact layers; a data line connected to the first source electrode; a first passivation layer connected to the first gate electrode; a power line; one end and the other end of a connection electrode respectively connected to the first drain electrode and the second gate electrode; a second passivation layer; and a pixel electrode-connected to the second drain electrode. | 01-27-2011 |
20110018000 | DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - Disclosed is a method of fabricating a display device that includes forming a buffer layer; forming a gate electrode of extrinsic polycrystalline silicon, a gate insulating layer, an active layer of intrinsic polycrystalline silicon and an auxiliary active layer of intrinsic amorphous silicon on the buffer layer; forming an ohmic contact layer of extrinsic amorphous silicon and contacting the auxiliary active layer, source and drain electrodes and a data line; patterning a first passivation layer, an insulating interlayer and the gate insulating layer to form a gate contact hole exposing the gate electrode; forming a gate line on the first passivation layer, made of a metal material, and contacting the gate electrode through the gate contact hole; forming a second passivation layer on the gate line; patterning the first and second passivation layers to form a drain contact hole exposing the drain electrode; and forming a pixel electrode on the second passivation layer in the pixel region and contacting the drain electrode through the drain contact hole. | 01-27-2011 |
20110018001 | GATE DRIVER ON ARRAY OF A DISPLAY - A gate driver on array of a display includes a substrate having a peripheral region, and a gate driver on array structure formed in the peripheral region. The gate driver on array structure includes a pull-down transistor, and the pull-down transistor has a gate electrode, an insulating layer, a semiconductor island, a source electrode, and a drain electrode. The semiconductor island extends out of both edges of the gate electrode, and extends out of an edge of the source electrode and an edge of the drain electrode. | 01-27-2011 |
20110024763 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A display device which has thin film transistors, wherein a semiconductor layer includes a first layer, second layers and third layers, the first layer has a channel region, the second layers are an impurity layer, the third layers are a low-concentration impurity layer, the second layers have connection portions connected with an electrodes, the third layers are formed to annularly surround the second layers, a channel-region-side edge portion out of edge portions of the third layer is in contact with the first layer, the edge portions of the third layer but the channel-region-side edge portion are in contact with an interlayer insulation film, the second layers have a first region where the second layer overlaps with a gate electrode and a second region where the second layer does not overlap with the gate electrode, and the connection portion is in the second region. | 02-03-2011 |
20110024764 | SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING THE SAME, AND DISPLAY DEVICE - The present invention provides a semiconductor device which can reduce I | 02-03-2011 |
20110037074 | Thin film transistor method of fabricating the same, and organic light emitting diode dislplay device having the same - A thin film transistor includes a substrate, a buffer layer on the substrate, a semiconductor layer on the buffer layer, source and drain electrodes directly on the semiconductor layer, each of the source and drain electrodes including at least one hole therethrough, a gate insulating layer on the substrate, and a gate electrode on the gate insulating layer and corresponding to the semiconductor layer. | 02-17-2011 |
20110042678 | Pad area, organic light emitting diode display device having the same, and method of fabricating the same - An organic light emitting diode (OLED) display device having a pixel area and a pad area. The pad area includes a silicon layer pattern arranged on the substrate, an insulating layer arranged on the silicon layer pattern, an interconnection layer arranged on the insulating layer, and a protective layer surrounding an edge of the interconnection layer and having an opening exposing the interconnection layer. Since a surface area of the interconnection layer is increased due to a roughness of the underlying polycrystalline silicon layer pattern in the pad area, resulting in increased contact area and reduced contact resistance between parts configured to operate a flat panel display device and the interconnection layer is increased. | 02-24-2011 |
20110042679 | Electro-Optical Device and Electronic Device - An object of the present invention is to provide an EL display device, which has a high operating performance and reliability. | 02-24-2011 |
20110049521 | ACTIVE DEVICE ARRAY MOTHER SUBSTRATE AND METHOD OF FABRICATING DISPLAY PANEL - An active device array mother substrate including a substrate, pixel arrays, and a polymer-stabilized alignment curing circuit is provided. The substrate has panel regions, a circuit region, a first cutting line, and a second cutting line. The first cutting line is disposed on the circuit region between an edge of the substrate and the second cutting line. The active devices of the pixel arrays have a semiconductor layer. The polymer-stabilized alignment curing circuit disposed on the circuit region includes curing pads disposed between the edge of the substrate and the first cutting line and curing lines having an upper conductive layer connected to the corresponding curing pads and the corresponding pixel array. The upper conductive layer is in the same layer as the source/drain conductor. Therefore, the curing lines are capable of preventing problems such as peeling, so as to keep the polymer-stabilized alignment curing circuit operating normally. | 03-03-2011 |
20110049522 | SEMICONDUCTOR DISPLAY DEVICE - It is an object of the present invention to provide a semiconductor display device having an interlayer insulating film which can obtain planarity of a surface while controlling film formation time, can control treatment time of heating treatment with an object of removing moisture, and can prevent moisture in the interlayer insulating film from being discharged to a film or an electrode adjacent to the interlayer insulating film. An inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover a TFT. Next, an organic resin film containing photosensitive acrylic resin is applied to the organic insulting film, and the organic resin film is partially exposed to light to be opened. Thereafter, an inorganic insulting film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover the opened organic resin film. Then, in the opening part of the organic resin film, a gate insulating film and the two layer inorganic insulating film containing nitrogen are opened partially is by etching to expose an active layer of the TFT. | 03-03-2011 |
20110049523 | Organic light emitting diode display and method of manufacturing the same - An OLED display including a substrate main body; a first gate electrode and a second semiconductor layer; a gate insulating layer on the first gate electrode and the second semiconductor layer; a first semiconductor layer and a second gate electrode overlying the first gate electrode and the second semiconductor layer, respectively; etching stopper layers contacting portions of the first semiconductor layer; an interlayer insulating layer on the first semiconductor layer and the second gate electrode and including contact holes exposing the plurality of etching stopper layers, respectively; a first source electrode and a first drain electrode on the interlayer insulating layer and the contact holes being indirectly connected to the first semiconductor layer via the etching stopper layers or directly connected to the first semiconductor layer; and a second source electrode and a second drain electrode on the interlayer insulating layer being connected to the second semiconductor layer. | 03-03-2011 |
20110049524 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - Provided is a display device including a thin-film transistor and a capacitor element, the thin-film transistor includes: a first insulating film (IN | 03-03-2011 |
20110049525 | ACTIVE MATRIX SUBSTRATE, DISPLAY DEVICE, TELEVISION APPARATUS, MANUFACTURING METHOD OF AN ACTIVE MATRIX SUBSTRATE, AND MANUFACTURING METHOD OF A DISPLAY DEVICE - An active matrix substrate includes: a plurality of pixel electrodes arranged in a matrix pattern and each forming a pixel; a plurality of gate lines each provided between the corresponding pixel electrodes and extending in parallel with each other; a plurality of first source lines each provided between the corresponding pixel electrodes and extending in a direction crossing an extending direction of the gate lines; a plurality of TFTs provided corresponding to the respective pixel electrodes and connected to the respective pixel electrodes, the respective gate lines, and the respective first source lines; a plurality of capacitor lines each provided between the corresponding gate lines and extending in parallel with each other; and a plurality of second source lines each provided between the corresponding pixel electrodes and extending in parallel with the first source lines. | 03-03-2011 |
20110057195 | POLY-SI THIN FILM TRANSISTOR AND ORGANIC LIGHT-EMITTING DISPLAY HAVING THE SAME - A thin film transistor comprises an Si-based channel having a nonlinear electron-moving path, a source and a drain disposed at both sides of the channel, a gate disposed above the channel, an insulator interposed between the channel and the gate, and a substrate supporting the channel and the source and the drain disposed at either side of the channel respectively. | 03-10-2011 |
20110062447 | LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR MANUFACTURING LIQUID CRYSTAL DISPLAY DEVICE - A reflection-type or transflective-type liquid crystal display device having excellent efficiency of light utility is provided at low cost. | 03-17-2011 |
20110068346 | DISPLAY DEVICE - A display device includes a wire substrate including a wire unit for driving the display device, an integrated circuit chip mounted at the wire substrate, and a pad unit extended from the wire unit to be disposed between the wire substrate and the integrated circuit chip. The pad unit is connected to the integrated circuit chip. The pad unit includes a first conductive layer extended from the wire unit, and a second conductive layer disposed on the first conductive layer. The hardness of the second conductive layer is less than the hardness of the first conductive layer. | 03-24-2011 |
20110073867 | ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - An array substrate comprises a substrate provided with a circuit pattern and covering layers that cover the upper surfaces and side surfaces of respective portions of the circuit pattern. | 03-31-2011 |
20110073868 | ELECTRO-OPTICAL DEVICE AND ELECTRONIC APPARATUS - An electro-optical device comprises: a first data line extending in a first direction; a second data line extending in the first direction and arranged so as to be at least partially overlapped with the first data line; a first scanning line and a second scanning line extending in a second direction intersecting the first direction; a first transistor electrically connected to the first data line and electrically connected to the first scanning line; a first pixel electrode electrically connected to the first transistor; a second transistor electrically connected to the second data line and electrically connected to the second scanning line; and a second pixel electrode electrically connected to the second transistor. | 03-31-2011 |
20110079789 | DISPLAY PANEL - A display panel includes a plurality of pads, a plurality of first contacts connected to the pads, a plurality of second contacts provided so as to be opposed to the plurality of first contacts, a polysilicon layer configured to form a plurality of polysilicon films to connect the plurality of first contacts and second contacts, and a gate metal layer. The gate metal layer forms at least one gate metal. The gate metal layer traverses the plurality of polysilicon films so as to form a plurality of transistors. The plurality of transistors are arranged in a zigzag pattern for each transistor set. A width of a portion of each of the polysilicon films, the portion forming a corresponding one of the transistors, is larger than a width of another portion of the polysilicon films. The other portion is connected to a corresponding one of the first contacts and second contacts. | 04-07-2011 |
20110089428 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device having high operating performance and reliability, and a manufacturing method thereof are provided. | 04-21-2011 |
20110095299 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING DISPLAY DEVICE - Disclosed herein is a display device, including: a substrate; a circuit part configured to include a drive element formed over the substrate; a planarization insulating layer configured to be formed on the circuit part; an electrically-conductive layer configured to be formed on the planarization insulating layer and include a plurality of first electrodes and an auxiliary interconnect; an aperture-defining insulating layer configured to insulate the plurality of first electrodes from each other and have an aperture through which part of the first electrode is exposed; a plurality of light emitting elements configured to be formed by stacking the first electrode, an organic layer including a light emitting layer, and a second electrode in that order; and a separator configured to be formed by removing the planarization insulating layer at a position surrounding a display area in which the plurality of light emitting elements connected to the drive element are disposed. | 04-28-2011 |
20110095300 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME - A manufacturing method of a thin film transistor array panel includes forming a gate line on a substrate and a gate insulating layer on the gate line, forming a semiconductor on the gate insulating layer, forming a first data line and a first drain electrode on the semiconductor, forming a lower passivation layer on the first data line and the first drain electrode, forming an upper passivation layer on the lower passivation layer and a metal layer on the upper passivation layer, etching the metal layer by using a photosensitive film as a mask to form a reflecting electrode and to expose the lower passivation layer, etching the exposed lower passivation layer to form a first contact hole exposing the first drain electrode, and forming a connection assistance member connecting the first drain electrode and the reflecting electrode through the first contact hole after removing the photosensitive film. | 04-28-2011 |
20110108845 | DISPLAY DEVICE - In a display device, the display device includes a substrate, a red color filter layer, a green color filter layer, and a blue color filter layer. The substrate has red, green and blue sub-pixel regions. The red color filter layer is located on the red, green and blue sub-pixel regions, and has a first opening formed in the green sub-pixel region and a second opening formed in the blue sub-pixel region. The green color filter layer is located in the first opening. The blue color filter layer is located in the second opening. Since the red color filter layer is used as an interlayer insulating layer, there is no need to perform a separate process to form a color filter layer and a process for an interlayer insulating layer can be omitted. Thus, it can simplify a process. | 05-12-2011 |
20110108846 | ARRAY SUBSTRATE FOR DISPLAY DEVICE - Disclosed is array substrate including a pixel region having a switching region, a driving region and a storage region. A switching TFT in the switching region includes a first gate electrode, a first gate insulating layer, a switching active layer on the first gate insulating layer, a switching source electrode on a first switching ohmic contact layer, and a switching drain electrode on a second switching ohmic contact layer; a driving TFT in the driving region is connected to the switching TFT and includes a first gate electrode, a second gate insulating layer, a driving active layer on the second gate insulating layer, a driving source electrode on a first driving ohmic contact layer, and a driving drain electrode on a second driving ohmic contact layer; wherein at least one of the switching and driving TFTs further includes a second gate electrode over the switching or driving active layers. | 05-12-2011 |
20110108847 | THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE HAVING THE SAME, AND METHOD OF FABRICATING THE SAME - A thin film transistor (TFT), a method of fabricating the same, an organic light emitting diode (OLED) display device having the same, and a method of fabricating the same. The TFT includes a substrate; a buffer layer disposed on the substrate; a semiconductor layer disposed on the buffer layer; a gate insulating layer disposed on the semiconductor layer; a gate electrode disposed on the gate insulating layer and corresponding to the semiconductor layer; and source and drain electrodes insulated from the gate electrode, and electrically connected to the semiconductor layer. Here, the semiconductor layer includes a plurality of seed regions separated from each other by a distance of 50 μm or more. | 05-12-2011 |
20110108848 | Organic Light Emitting Display Device and Manufacturing Method Thereof - An organic light emitting display having an active layer of a thin film transistor formed on a substrate, a first conductive layer formed at an edge of the active layer, a first insulation layer formed on the substrate and the first conductive layer, a second conductive layer corresponding to a central area of the active layer formed on the first insulation layer, a fanout lower electrode separated a predetermined distance from the second conductive layer, a pixel electrode, a third conductive layer formed on the second conductive layer, a fanout upper electrode formed on the fanout lower electrode, a second insulation layer formed on the third conductive layer, the fanout upper electrode, and the pixel electrode, and source and drain electrodes contacting the pixel electrode and formed on the second insulation layer. | 05-12-2011 |
20110108849 | TFT-LCD PIXEL UNIT AND METHOD FOR MANUFACTURING THE SAME - A thin film transistor liquid crystal display (TFT-LCD) pixel unit and a method for manufacturing the same. The pixel unit comprises a gate line and a gate electrode formed on a substrate and a first gate insulating layer, an active layer, and a doped layer sequentially that are formed on the gate line and the gate electrode. An intercepting trench is formed on the gate line to cut off the doped layer and the active layer on the gate line. A second insulating layer covers the intercepting trench and the substrate where the gate line and the gate electrode are not formed. A pixel electrode is formed on the second insulating layer and is integrated with the second source/drain electrode. | 05-12-2011 |
20110114961 | METHOD OF FORMING POLYCRYSTALLINE SILICON LAYER, THIN FILM TRANSISTOR, ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE HAVING THE SAME, AND METHODS OF FABRICATING THE SAME - A method of forming a polycrystalline silicon layer, a thin film transistor (TFT), an organic light emitting diode (OLED) display device having the same, and methods of fabricating the same. The method of forming a polycrystalline silicon layer includes providing a substrate, forming a buffer layer on the substrate, forming an amorphous silicon layer on the buffer layer, forming a groove in the amorphous silicon layer, forming a capping layer on the amorphous silicon layer, forming a metal catalyst layer on the capping layer, and annealing the substrate and crystallizing the amorphous silicon layer into a polycrystalline silicon layer. | 05-19-2011 |
20110114962 | ARRAY SUBSTRATE FOR DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An array substrate for a display device includes a gate electrode on a substrate; a gate insulating layer on the gate electrode and having the same plane area and the same plane shape as the gate electrode; an active layer on the gate insulating layer and exposing an edge of the gate insulating layer; an interlayer insulating layer on the active layer and including first and second active contact holes, the first and second active contact holes respectively exposing both sides of the active layers; first and second ohmic contact layers contacting the active layer through the first and second active contact holes, respectively; a source electrode on the first ohmic contact layer; a drain electrode on the second ohmic contact layer; a data line on the interlayer insulating layer and connected to the source electrode; a first passivation layer on the source electrode, the drain electrode and the data line, the first passivation layer, the interlayer insulating layer and the gate insulating layer have a first gate contact hole exposing a portion of the gate electrode; a gate line on the first passivation layer and contacting the gate electrode through the first gate contact hole, the gate line crossing the data line; a second passivation layer on the gate line and having a drain contact hole exposing the drain electrode; and a pixel electrode on the second passivation layer and contacting the drain electrode through the contact hole. | 05-19-2011 |
20110114963 | Thin film transistor, organic light emitting diode display device having the same, and method of fabricating the same - A thin film transistor includes a substrate, a buffer layer on the substrate, a semiconductor layer including source/drain regions and a channel region on the buffer layer, a gate insulating layer corresponding to the channel region, a gate electrode corresponding to the channel region, and source/drain electrodes electrically connected to the semiconductor layer. A polysilicon layer of the channel region may include only a low angle grain boundary, and a high angle grain boundary may be disposed in a region of the semiconductor layer that is apart from the channel region. | 05-19-2011 |
20110114964 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF - To provide a liquid crystal display device having high quality display by obtaining a high aperture ratio while securing a sufficient storage capacitor (Cs), and at the same time, by dispersing a load (a pixel writing-in electric current) of a capacitor wiring in a timely manner to effectively reduce the load. A scanning line is formed on a different layer from a gate electrode and the capacitor wiring is arranged so as to be parallel with a signal line. Each pixel is connected to the individually independent capacitor wiring via a dielectric. Therefore, variations in the electric potential of the capacitor wiring caused by a writing-in electric current of a neighboring pixel can be avoided, whereby obtaining satisfactory display images. | 05-19-2011 |
20110121309 | METHOD OF FABRICATING POLYSILICON LAYER, THIN FILM TRANSISTOR, ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE SAME, AND METHOD OF FABRICATING THE SAME - A method of fabricating an organic light emitting diode (OLED) display device having a thin film transistor including a polysilicon layer. The method of fabricating a polysilicon layer includes forming a buffer layer on a substrate, forming a metal catalyst layer on the buffer layer, diffusing a metal catalyst into the metal catalyst layer to the buffer layer, removing the metal catalyst layer, forming an amorphous silicon layer on the buffer layer, and annealing the substrate to crystallize the amorphous silicon layer into a polysilicon layer. The thin film transistor includes a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate insulating layer disposed above the substrate and on the semiconductor layer, a gate electrode disposed on the gate insulating layer, a source electrode and a drain electrode both electrically connected to the semiconductor layer, and a metal silicide disposed between the buffer layer and the semiconductor layer. | 05-26-2011 |
20110127538 | ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE - An organic light emitting diode (OLED) display device, including a first substrate and a second substrate facing each other, a sealant arranged between the first and second substrates to adhere the first and second substrates together, a plurality of interconnections arranged on one of the first and second substrates and a plurality of cladding parts covering at least a portion of each of the plurality of interconnections at a location that corresponds to the sealant, each of the cladding parts including a material having a higher melting point than that of the interconnections. By including the cladding parts, a short circuit between the interconnections caused by heat applied to the sealant can be prevented, and safety and reliability of the OLED display device can be improved. | 06-02-2011 |
20110133199 | ARRRAY SUBSTRATE FOR LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An array substrate for an LCD device includes a first TFT including a first semiconductor layer, a first gate electrode, wherein the first gate electrode is directly over the first semiconductor layer; a first protrusion extending from the first gate electrode along an edge of the first semiconductor layer; a second TFT including a second semiconductor layer, a second gate electrode, wherein the second gate electrode is directly over the second semiconductor layer; a second protrusion extending from the second gate electrode along an edge of the second semiconductor layer; a third TFT connected to crossed data and gate lines including a third semiconductor layer, a third gate electrode, wherein the third gate electrode is directly over the third semiconductor layer; a third protrusion extending from the third gate electrode along an edge of the third semiconductor layer; and a pixel electrode. | 06-09-2011 |
20110133200 | Dual Gate Layout for Thin Film Transistor - A dual gate layout of a thin film transistor of liquid crystal display to alleviate dark current leakage is disclosed. The layout includes (1) a polysilicon on a substrate having a L-shaped or a snake shaped from top-view, which has a heavily doped source region, a first lightly doped region, a first gate channel, a second lightly doped region, a second gate channel, a third lightly doped region and a heavily doped drain region formed in order therein; (2) a gate oxide layer formed on the polysilicon layer and the substrate, (3) a gate metal layer then formed on the gate oxide layer having a scanning line and an extension portion with a L-shaped or an I-shaped. The gate metal intersects with the polysilicon layer thereto define the forgoing gate channels. Among of gate channels, at least one is along the signal line, which is connected to the source region through a source contact. | 06-09-2011 |
20110133201 | ELECTRONIC CIRCUIT - An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layer is less than 1500 Å, e.g., between 100 and 750 Å. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting of aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer. | 06-09-2011 |
20110140119 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display device and a method of manufacturing the same, the organic light-emitting display device including: a substrate; a display unit disposed on the substrate; a sealing substrate disposed facing the display unit; a sealant adhering the substrate to the sealing substrate; and a getter formed on surfaces of the substrate, the sealing substrate, and the sealant that face a space formed inside the display device. | 06-16-2011 |
20110140120 | Semiconductor Device - It is an object of the present invention to connect a wiring, an electrode, or the like formed with two incompatible films (an ITO film and an aluminum film) without increasing the cross-sectional area of the wiring and to achieve lower power consumption even when the screen size becomes larger. The present invention provides a two-layer structure including an upper layer and a lower layer having a larger width than the upper layer. A first conductive layer is formed with Ti or Mo, and a second conductive layer is formed with aluminum (pure aluminum) having low electric resistance over the first conductive layer. A part of the lower layer projected from the end section of the upper layer is bonded with ITO. | 06-16-2011 |
20110156046 | PHOTOMASK AND THIN-FILM TRANSISTOR FABRICATED USING THE PHOTOMASK - A photomask includes; a source electrode pattern including; a first electrode portion which extends in a first direction, a second electrode portion which extends in the first direction and is substantially parallel to the first electrode portion, and a third electrode portion which extends from a first end of the first electrode portion to a first end of the second electrode portion and is rounded with a first curvature, a drain electrode pattern which extends in the first direction and is disposed between the first electrode portion and the second electrode portion, wherein an end of the drain electrode pattern is rounded to correspond to the third electrode portion; and a channel region pattern which is disposed between the source electrode pattern and the drain electrode pattern, wherein a center location of the first curvature and a center location of the rounded portion of the end of the drain electrode pattern are the same. | 06-30-2011 |
20110169009 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THE SAME - In an organic light emitting diode (OLED) display and a manufacturing method thereof, the OLED display includes a substrate main body; an insulation layer pattern formed on the substrate main body, and including a first thickness layer and a second thickness layer thinner than the first thickness layer; a metal catalyst that is scattered on the first thickness layer of the insulation layer pattern; and a polycrystalline semiconductor layer formed on the insulation layer pattern, and divided into a first crystal area corresponding to the first thickness layer and to a portion of the second thickness layer adjacent to the first thickness layer and a second crystal area corresponding to the remaining part of the second thickness layer. The first crystal area of the polycrystalline semiconductor layer is crystallized through the metal catalyst, and the second crystal area of the polycrystalline semiconductor layer is solid phase crystallized. | 07-14-2011 |
20110169010 | Organic light emitting diode display device and method of fabricating the same - An organic light emitting diode display device and a method of manufacturing thereof, the device including a substrate, the substrate including a pixel part and a circuit part; a first semiconductor layer and a second semiconductor layer on the pixel part of the substrate; a gate insulating layer on an entire surface of the substrate; gate electrodes on the gate insulating layer, the gate electrodes corresponding to the first semiconductor layer and the second semiconductor layer, respectively; source/drain electrodes insulated from the gate electrodes, the source/drain electrodes being connected to the first and second semiconductor layers, respectively; a first electrode connected to the source/drain electrodes of the first semiconductor layer; an organic layer on the first electrode; a second layer on the organic layer; and a metal catalyst layer under the first semiconductor layer. | 07-14-2011 |
20110169011 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - The present invention improves the aperture ratio of a pixel of a reflection-type display device or a reflection type display device without increasing the number of masks and without using a blackmask. A pixel electrode ( | 07-14-2011 |
20110175101 | LIGHT-EMITTING DEVICE, FLEXIBLE LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE AND FLEXIBLE-LIGHT EMITTING DEVICE - To simply provide a flexible light-emitting device with long lifetime. To provide a flexible light-emitting device with favorable display characteristics, high yield, and high reliability without display unevenness. Provided is a flexible light-emitting device including: a substrate having flexibility and a property of transmitting visible light; an adhesive layer provided over the substrate; a conductive layer having a property of transmitting visible light provided over the adhesive layer; an insulating layer disposed over the conductive layer; a transistor provided over the insulating layer; an interlayer insulating layer covering the transistor, a light-emitting element including a first electrode electrically connected to source or drain electrodes of the transistor and provided over the interlayer insulating layer, a second electrode facing the first electrode, and a layer including an organic compound having a light-emitting property provided between the first and second electrodes; and a sealing layer covering the light-emitting element. | 07-21-2011 |
20110175102 | LIGHT-EMITTING DEVICE, FLEXIBLE LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, LIGHTING APPARATUS, AND METHOD OF MANUFACTURING LIGHT-EMITTING DEVICE AND FLEXIBLE-LIGHT EMITTING DEVICE - An object is to provide a light-emitting device or a flexible light-emitting device having low surface temperature, a long lifetime, and high reliability. Another object is to provide a simple method of manufacturing the light-emitting device or the flexible light-emitting device. Provided is a light-emitting device or a flexible light-emitting device which includes: a substrate having a light-transmitting property with respect to visible light; a first adhesive layer provided over the substrate; an insulating layer located over the first adhesive layer; a light-emitting element comprising a first electrode formed over the insulating layer, a second electrode facing the first electrode, and a layer including an organic compound having a light-emitting property between the first electrode and the second electrode, a second adhesive layer formed over the second electrode; a metal substrate provided over the second adhesive layer; and a heat radiation material layer formed over the metal substrate. | 07-21-2011 |
20110186853 | THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND DISPLAY UNIT - A thin film transistor is provided. The thin film transistor includes a gate electrode, a gate insulating film, and an oxide semiconductor film, wherein at least a portion of the gate electrode includes a metal oxide. An electric device and a display device that include the thin film transistor are also provided in addition to a manufacture method. | 08-04-2011 |
20110186854 | SINGLE-SHOT SEMICONDUCTOR PROCESSING SYSTEM AND METHOD HAVING VARIOUS IRRADIATION PATTERNS - High throughput systems and processes for recrystallizing thin film semiconductors that have been deposited at low temperatures on a substrate are provided. A thin film semiconductor workpiece ( | 08-04-2011 |
20110198606 | THIN FILM TRANSISTOR AND DISPLAY DEVICE - An exemplary aspect of the present invention is a thin film transistor including: a gate electrode formed on a substrate; a gate insulating film that includes a nitride film and covers the gate electrode; and a semiconductor layer that is disposed to be opposed to the gate electrode with the gate insulating film interposed therebetween, and has a microcrystalline semiconductor layer formed in at least an interface in contact with the nitride film, in which the microcrystalline semiconductor layer contains oxygen at a concentration higher than that of contained nitrogen in at least the vicinity of the interface with the nitride film, the nitrogen being diffused from the nitride film. | 08-18-2011 |
20110198607 | THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, DISPLAY DEVICE, AND ELECTRONIC APPARATUS - A thin-film transistor manufactured on a transparent substrate has a structure of a top gate type crystalline silicon thin-film transistor in which a light blocking film, a base layer, a crystalline silicon film, a gate insulating film, and a gate electrode film arranged not to overlap at least a channel region are sequentially formed on the transparent substrate. The channel region has channel length L, LDD regions having LDD length d on both sides of the channel region, a source region, and a drain region are formed in the crystalline silicon film. The light blocking film is divided across the channel region. Interval x between the divided light blocking films is equal to or larger than channel length L and equal to or smaller than a sum of channel length L and a double of LDD length d (L+2d), allowing low the manufacturing cost and suppressed photo leak current. | 08-18-2011 |
20110198608 | SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND DISPLAY DEVICE - A semiconductor device includes a thin film transistor and a thin film diode on a same substrate. A semiconductor layer ( | 08-18-2011 |
20110204375 | THIN FILM TRANSISTOR STRUCTURE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE - A high-performance thin film transistor structure which is easily manufactured is provided. The thin film transistor structure includes: a first electrode; second and third electrodes apart from each other in a hierarchical level different from that of the first electrode; first, second, and third wirings connected to the first, second, and third electrodes, respectively; a main stack body disposed so as to be opposed to the first electrode with an interlayer insulating layer in between, between the first electrode, and the second and third electrodes; and a sub stack body including an insulating layer and a semiconductor layer, disposed so as to be opposed to the first wiring with the interlayer insulating layer in between, between the first and second wirings in a position where the first and second wirings overlap and/or between the first and third wirings in a position where the first and third wirings overlap. | 08-25-2011 |
20110215337 | ELECTRIC OPTICAL DEVICE AND ELECTRONIC DEVICE - An electric optical device includes a transistor that includes a semiconductor layer having a source region connected to a data line, a drain region connected to a pixel electrode, and a channel region, and a gate electrode, a first light blocking film that is formed to be wider than the gate electrode and that is connected to the gate electrode via a first contact hole which is opened in a first insulating film disposed on the gate electrode, and a second light blocking film that is provided between the semiconductor layer and a substrate and is connected to the first light blocking film via a second contact hole which is opened to penetrate the first insulating film, a gate insulating film, and a second insulating film. | 09-08-2011 |
20110220906 | PIXEL STRUCTURE AND FABRICATION METHOD THEREOF - The present invention discloses pixel structures and fabrication methods thereof. The pixel includes a thin film transistor forming at a thin film transistor region and a storage capacitor forming at a pixel electrode region. The method includes: forming a gate conduction layer on a substrate; forming a gate insulation layer on the gate conduction layer; forming a source conduction layer and a drain conduction layer on the gate insulation layer, in which the drain conduction layer has an extension section extending to the pixel electrode region; forming a channel layer on the source conduction layer and the drain conduction layer; and forming a protection layer on the channel layer. The extension section and an electrode layer serve as the upper and lower electrode of the storage capacitor, respectively. Wherein the gate conduction layer, the source conduction layer, the drain conduction layer, and the channel layer are made of metallic oxides. | 09-15-2011 |
20110220907 | SEMICONDUCTOR DEVICE - In an inverted staggered thin film transistor, a microcrystalline silicon film and a pair of silicon carbide films are provided between a gate insulating film and wirings serving as a source wiring and a drain wiring. The microcrystalline silicon film is formed on the gate insulating film side and the pair of silicon carbide films are formed on the wiring side. In such a manner, a semiconductor device having favorable electric characteristics can be manufactured with high productivity. | 09-15-2011 |
20110220908 | Organic light emitting display device - An organic light emitting display device includes a substrate, a plurality of sub-pixels on the substrate, each sub-pixel including a first region configured to emit light and a second region configured to transmit external light, a plurality of thin film transistors disposed in the first region of the each sub-pixel, a plurality of first electrodes disposed in the first region of each sub-pixel and electrically connected to the thin film transistors, a first insulating layer on at least a portion of the first region of each sub-pixel to cover a portion of the first electrode, an organic emission layer on the first electrode, a second insulating layer on at least a portion of the second region of each sub-pixel, the second insulating layer including a plurality of openings therein, and a second electrode covering the organic emission layer, the first insulating layer, and the second insulating layer. | 09-15-2011 |
20110220909 | BACKPLANE STRUCTURES FOR SOLUTION PROCESSED ELECTRONIC DEVICES - There is provided a backplane for an organic electronic device. The backplane has a TFT substrate having a multiplicity of electrode structures thereon. There are spaces around the electrode structures and a layer of inorganic filler in the spaces. The thickness of the layer of inorganic filler is the same as the thickness of the electrode structures. | 09-15-2011 |
20110227088 | EL Display Device and Method for Manufacturing the Same - Plurality of pixels ( | 09-22-2011 |
20110241013 | Thin film transistor, method of producing the same and flexible display device including the thin film transistor - A thin film transistor includes a polymer substrate having a weight loss of 0.95% or less at a temperature in the range of 400 to 600° C. A method of producing the thin film transistor includes forming a polymer substrate by forming a polymer layer and annealing the polymer layer at a temperature in the range of 150 to 550° C. A flexible display device includes the thin film transistor. | 10-06-2011 |
20110241014 | Organic light emitting display device - An organic light emitting display device includes a substrate having transmitting and pixel regions, the pixel regions being separated by the transmitting regions, at least one thin film transistor in each of the pixel regions, a plurality of transparent first conductive lines electrically connected to the thin film transistors and extending across the transmitting regions, a plurality of second conductive lines electrically connected to the thin film transistors and extending across the transmitting regions, a passivation layer, a plurality of pixel electrodes on the passivation layer, the pixel electrodes being separated and positioned to correspond to respective pixel regions, each of the pixel electrodes being electrically connected to and overlapping a corresponding thin film transistor, an opposite electrode overlapping the pixel electrodes in the transmitting and pixel regions, and an organic emission layer between the pixel electrodes and the opposite electrode. | 10-06-2011 |
20110241015 | PIXEL STRUCTURE - A pixel structure including a scan line, a data line intersecting the scan line, a first gate, a second gate, a third gate, a semiconductor layer, a source, a first drain, a second drain, a first pixel electrode, and a second pixel electrode is provided. The dataline and the scan line are interlaced disposed. The semiconductor layer is disposed on the scan line to define the first gate and the second gate. The source is directly connected to the data line and located between the first gate and the second gate. The first gate is located between the first drain and the source. The second gate is located between the second drain and the source. The third gate is electrically connected to the scan line. The first pixel electrode and the second pixel electrode are respectively electrically connected to the first drain and the second drain. | 10-06-2011 |
20110248279 | Thin film transitor, fabrication method of the same, and display device having the same - A thin film transistor, a method of manufacturing the same, and a display device including the same, the thin film transistor including a substrate; a polysilicon semiconductor layer on the substrate; and a metal pattern between the semiconductor layer and the substrate, the metal pattern being insulated from the semiconductor layer, wherein the polysilicon of the semiconductor layer includes a grain boundary parallel to a crystallization growing direction, and a surface roughness of the polysilicon semiconductor layer defined by a distance between a lowest peak and a highest peak in a surface thereof is less than about 15 nm. | 10-13-2011 |
20110254011 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A display substrate includes a gate line, a gate insulation layer, a data line, a switching element, a protection insulation layer, a gate pad portion and a data pad portion. The gate insulation layer is disposed on the gate line. The switching element is connected to the gate line and the data line. The protection insulation layer is disposed on the switching element. The gate pad portion includes a first gate pad electrode which makes contact with an end portion of the gate line through a first hole formed through the gate insulation layer, and a second gate pad electrode which makes contact with the first gate pad electrode through a second hole formed through the protection insulation layer. The data pad portion includes a data pad electrode which makes contact with an end portion of the data line through a third hole formed through the protection insulation layer. | 10-20-2011 |
20110260172 | EL DISPLAY DEVICE AND ELECTRONIC DEVICE - An EL display device capable of producing a vivid multi-gradation color display, and an electronic device having the EL display device. An electric current supplied to an EL element is controlled by providing a resistor between a current control TFT and the EL element formed in a pixel, the resistor having a resistance higher than the on-resistance of the current control TFT. The gradation display is executed by a time-division drive system which controls the emission and non-emission of light of the EL element by time, preventing the effect caused by a dispersion in the characteristics of the current control TFT. | 10-27-2011 |
20110278583 | THIN-FILM SEMICONDUCTOR DEVICE FOR DISPLAY APPARATUS AND MANUFACTURING METHOD THEREOF - A thin-film semiconductor device includes, in order, a substrate, a gate electrode, a gate insulating film, a first channel layer, and a second channel layer. The second channel layer includes a protrusion between first top surface end portions. The protrusion has first lateral surfaces that each extend between one of the first top surface end portions and a top surface of the protrusion. An insulation layer is on the top surface of the protrusion. The insulation layer has second lateral surfaces that each extend to one of second top surface end portions of the insulation layer. Two contact layers are each on one of the second top surface end portions of the insulation layer, adjacent one of the second lateral surfaces of the insulation layer, adjacent one of the first lateral surfaces of the protrusion, and on one of the first top surface end portions of the second channel layer. A source electrode is on one of the two contact layers, and a drain electrode is on the other of the two contact layers. The two contact layers and the upper portion of the protrusion of said second channel layer are of opposite conductivity types. | 11-17-2011 |
20110278584 | Liquid Crystal Display Panel - A laminated spacer portion formed by laminating various thin films that constitute thin-film transistors is disposed in peripheral driver circuits. As a result, even in a structure in which part of a sealing member is disposed above the peripheral driver circuits, pressure exerted from spacers in the sealing member is concentrated on the laminated spacer portion, whereby destruction of a thin-film transistor of the peripheral driver circuits can be prevented caused by the pressure from the sealing portion. | 11-17-2011 |
20110284861 | LOW-TEMPERATURE POLYSILICON THIN FILM AND METHOD OF MANUFACTURING THE SAME, TRANSISTOR, AND DISPLAY APPARATUS - A method for manufacturing a low-temperature polysilicon thin film comprises the steps of providing a substrate and forming a buffer layer on the substrate; forming a first amorphous silicon thin film on the buffer layer; forming catalyst particles on the first amorphous silicon thin film; forming a second amorphous silicon thin film to cover the first amorphous silicon thin film and the catalyst particles; and performing a crystallization of the first and second amorphous silicon thin films by using the catalyst particles so as to form the low-temperature polysilicon thin film. | 11-24-2011 |
20110291101 | Display and manufacturing method of the same - A display, including a substrate, a plurality of signal wires, a first gate electrode, a second gate electrode, a gate insulating layer, a first semiconductor layer including a first source/drain region doped with a p-type impurity, a second semiconductor layer including a second source/drain region doped with an n-type impurity, a planarization layer having a first contact hole exposing a portion of the first source/drain region, a second contact hole exposing a portion of the second source/drain region, and a third contact hole exposing a portion of any one of the signal wires, a first connection electrode, a second connection electrode, a lower electrode, an organic film layer, and an upper electrode. | 12-01-2011 |
20110291102 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME, AND LIQUID CRYSTAL DISPLAY - A thin film transistor array panel includes a substrate, a first thin film transistor formed on the substrate, a color filter formed on the first thin film transistor and having a through hole, a capping layer formed on the color filter and having an opening, and a pixel electrode formed on the capping layer and connected to the first thin film transistor through the through hole. The opening exposes the color filter outside the through hole. | 12-01-2011 |
20110297952 | THIN FILM TRANSISTOR AND DISPLAY DEVICE USING THE SAME AND METHOD FOR MANUFACTURING THE SAME - A thin film transistor according to an example embodiment includes: a substrate body; a semiconductor layer formed on the substrate body and comprising a polycrystalline silicon film having a surface resistance from about 2000 ohm/sq to about 8000 ohm/sq; and a source electrode and a drain electrode each contacted with the semiconductor layer and comprising a metallic material having a resistance from about 350 to about 2000 ohm. | 12-08-2011 |
20110303923 | TFT, ARRAY SUBSTRATE FOR DISPLAY APPARATUS INCLUDING TFT, AND METHODS OF MANUFACTURING TFT AND ARRAY SUBSTRATE - A thin film transistor (TFT), an array substrate including the TFT, and methods of manufacturing the TFT and the array substrate. The TFT includes an active layer, and a metal member that corresponds to a portion of each of the source region and the drain region of the active layer, and is arranged on the active layer, a portion of the metal member contacts the source and drain regions of the active layer and the source and drain electrodes, and portions of the active layer that corresponds to portions below the metal member of the active layer are not doped. | 12-15-2011 |
20110309369 | LIQUID CRYSTAL DISPLAY DEVICE - Techniques are provided for unifying steps of sealing material so that the yield and the reliability of a liquid-crystal display device become high. A starting film of scanning lines is patterned so that prismatic dummy wirings | 12-22-2011 |
20110315993 | Light Emitting Device and Method of Manufacturing the Same - There is provided a light emitting device in which low power consumption can be realized even in the case of a large screen. The surface of a source signal line or a power supply line in a pixel portion is plated to reduce a resistance of a wiring. The source signal line in the pixel portion is manufactured by a step different from a source signal line in a driver circuit portion. The power supply line in the pixel portion is manufactured by a step different from a power supply line led on a substrate. A terminal is similarly plated to made the resistance reduction. It is desirable that a wiring before plating is made of the same material as a gate electrode and the surface of the wiring is plated to form the source signal line or the power supply line. | 12-29-2011 |
20110315994 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a display device includes forming a gate electrode on a substrate, a gate insulating layer on the gate electrode, and an active layer on the gate insulating layer, the gate electrode made of extrinsic polycrystalline silicon, the active layer made of intrinsic polycrystalline silicon; forming an etch stopper on the active layer; forming source and drain electrodes spaced apart from each other on the etch stopper; forming an ohmic contact layer each between a side of the active layer and the source electrode and between an opposing side of the active layer and the drain electrode; forming a gate line connected to the gate electrode; and forming a data line crossing the gate line. | 12-29-2011 |
20120007093 | TRANSISTOR STRUCTURE AND LIGHT EMITTING APPARATUS - Disclosed is a transistor structure including: a first thin film transistor including, a first gate electrode; a first insulating film which covers the first gate electrode; and a first semiconductor film formed on the first insulating film in a position corresponding to the first gate electrode; and a second thin film transistor including, a second semiconductor film formed on the first insulating film; a second insulating film which covers the second semiconductor film; and a second gate electrode formed in a position corresponding to a channel portion of the second semiconductor film on the second insulating film, wherein the first semiconductor film and the second semiconductor film include a first portion on the first insulating film side and a second portion on the opposite surface side, and one of the first portion or the second portion has a higher degree of crystallization of silicon compared to the other. | 01-12-2012 |
20120007094 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A semiconductor device includes a thin film transistor. The thin film transistor includes a semiconductor film over a substrate, in which the semiconductor film includes a pair of first regions, a pair of second regions interposed between the pair of first regions, and a channel formation region interposed between the pair of second regions. A concentration of an impurity in the pair of second regions is smaller than a concentration of the impurity in the pair of first regions. The thin film transistor includes an insulating film, in which a portion of the insulating film is provided over the semiconductor film. The thin film transistor includes a conductive film over the portion, and the conductive film includes a taper shape. | 01-12-2012 |
20120007095 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - This invention provides a semiconductor device having high operation performance and high reliability. An LDD region | 01-12-2012 |
20120007096 | ID CHIP AND IC CARD - The present invention provides an ID chip or an IC card in which the mechanical strength of an integrated circuit can be enhanced without suppressing a circuit scale. An ID chip or an IC card of the present invention has an integrated circuit in which a TFT (a thin film transistor) is formed from an insulated thin semiconductor film. Further, an ID chip or an IC card of the present invention has a light-emitting element and a light-receiving element each using a non-single-crystal thin film for a layer conducting photoelectric conversion. Such a light-emitting element or a light-receiving element may be formed consecutively to (integrally with) an integrated circuit or may be formed separately and attached to an integrated circuit. | 01-12-2012 |
20120012852 | METHOD OF MANUFACTURING THIN FILM TRANSISTOR - The object of the present invention is to form a low-concentration impurity region with good accuracy in a top gate type TFT. Phosphorus is added to a semiconductor layer by using a pattern made of a conductive film as a mask to form an N-type impurity region in a self-alignment manner. A positive photoresist is applied to a substrate so as to cover the pattern and then is exposed to light applied to the back of the substrate and then is developed, whereby a photoresist | 01-19-2012 |
20120012853 | TFT ARRANGEMENT FOR DISPLAY DEVICE - A new TFT arrangement is demonstrated, which enables prevention of TFT to be formed over a joint portion between the adjacent SOI layers prepared by the process including the separation of a thin single crystal semiconductor layer from a semiconductor wafer. The TFT arrangement is characterized by the structure where a plurality of TFTs each belonging to different pixels is gathered and arranged close to an intersection portion of a scanning line and a signal line. This structure allows the distance between regions, which are provided with the plurality of TFTs, to be extremely large compared with the distance between adjacent TFTs in the conventional TFT arrangement in which all TFTs are arranged in at a regular interval. The formation of a TFT over the joint portion can be avoided by the present arrangement, which leads to the formation of a display device with a negligible amount of display defects. | 01-19-2012 |
20120012854 | ACTIVE MATRIX SUBSTRATE, DISPLAY PANEL, DISPLAY DEVICE, AND LASER IRRADIATION METHOD - In an active matrix substrate ( | 01-19-2012 |
20120018731 | LIQUID CRYSTAL DISPLAY DEVICE - A liquid crystal display device includes a gate electrode formed on a substrate; a active pattern and an ohmic contact pattern formed to overlap with the gate electrode with a gate insulating film therebetween; a source electrode formed on the active pattern and the ohmic contact; a drain electrode formed to oppose the source electrode; a pixel electrode overlapped with the drain electrode and directly contacted with the drain electrode; a common electrode formed to overlap with the pixel electrode with a passivation film therebetween and having a plurality of holes; and wherein the plurality of holes of the common electrode are only formed on a region in which the pixel electrode is formed. | 01-26-2012 |
20120025197 | THIN FILM TRANSISTOR SUBSTRATE OF LIQUID CRYSTAL DISPLAY PANEL - A thin film transistor substrate of a liquid crystal display panel and manufacturing method thereof are disclosed. The thin film transistor substrate of the liquid crystal display panel includes a substrate, a storage capacitor electrode, a first insulated layer, a gate electrode, a gate insulated layer, a patterned semiconductor layer, a source electrode, a drain electrode, a second insulated layer, and at least one pixel electrode. A part of the storage capacitor electrode overlaps a part of the pixel electrode to form a storage capacitor and the storage capacitor electrode includes a patterned transparent conducting layer and a patterned opaque conducting layer. Moreover, the patterned transparent conducting layer and the patterned opaque conducting layer are defined by a gray-tone mask, and an area of the patterned transparent conducting layer is larger than an area of the patterned opaque conducting layer to improve the aperture ratio. | 02-02-2012 |
20120025198 | THIN FILM TRANSISTOR ARRAY SUBSTRATE - A thin film transistor array substrate includes a substrate having a plurality of pixel units arranged in a matrix, a plurality of first gate lines and second gate lines alternately arranged on the substrate, a plurality of source lines perpendicular to the first gate lines and the second gate lines formed on the substrate, and a plurality of thin film transistors respectively positioned in the pixel units. Each of the source lines further includes a main source line and a sub source line electrically connected to each other in parallel connection. | 02-02-2012 |
20120032181 | SEMICONDUCTOR DEVICE AND DISPLAY DEVICE - It is an object of the invention to provide a thin, lightweight, high performance, and low in cost semiconductor device and a display device by reducing an arrangement area required for a power supply wiring and a ground wiring of a functional circuit and decreasing a drop in power supply voltage and a rise in ground voltage. In the functional circuit of the semiconductor device and the display device, a power supply wiring and a ground wiring are formed in a comb-like arrangement, and the tips thereof are electrically connected with a first wiring, a second wiring, and a contact between the first wiring and the second wiring, thereby forming in a grid-like arrangement. The drop in power supply voltage and the rise in ground voltage can be decreased and the arrangement area can be decreased in the grid-like arrangement. | 02-09-2012 |
20120037916 | Organic light-emitting diode display device and method of manufacturing the same - An organic light-emitting diode display device includes a substrate, a display unit on the substrate, a touch unit facing the substrate, and a sealing portion surrounding the display unit. The sealing portion couples the substrate to the touch unit and includes glass frit. The touch unit includes an encapsulation substrate, a first conductive layer on the encapsulation substrate, an insulating layer on a portion of the first conductive layer and the encapsulation substrate, and a second conductive layer on the first conductive layer and the insulating layer. The insulating layer of the touch unit includes an organosilicon compound and has a thermal decomposition temperature of about 360° C. or more. | 02-16-2012 |
20120056188 | Organic light emitting diode display and manufacturing method thereof - The described technology relates generally to an OLED display and manufacturing method thereof. The OLED display includes a substrate, a thin film transistor on the substrate and including a semiconductor layer, a gate electrode, a source electrode, and a drain electrode, and an organic light emitting element coupled to the thin film transistor and including a pixel electrode, an organic emission layer, and a common electrode, wherein the semiconductor layer is formed of a polycrystalline silicon layer, and remnants and contaminants at a surface of the polycrystalline silicon layer are reduced or eliminated through an atmospheric pressure plasma treatment. The semiconductor layer is formed of a polycrystalline silicon layer where remnants and contaminants at the surface thereof are reduced or eliminated through an atmospheric pressure plasma treatment. | 03-08-2012 |
20120056189 | THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE USING THE SAME - A thin film transistor includes a substrate, a semiconductor layer provided on the substrate and crystallized by using a metal catalyst, a gate electrode insulated from and disposed on the semiconductor layer, and a getter layer disposed between the semiconductor layer and the gate electrode and formed with a metal oxide having a diffusion coefficient that is less than that of the metal catalyst in the semiconductor layer. | 03-08-2012 |
20120056190 | EL Display Device and a Method of Manufacturing the Same - To provide a high throughput film deposition means for film depositing an organic EL material made of polymer accurately and without any positional shift. A pixel portion is divided into a plurality of pixel rows by a bank, and a head portion of a thin film deposition apparatus is scanned along a pixel row to thereby simultaneously apply a red light emitting layer application liquid, a green light emitting layer application liquid, and a blue light emitting layer application liquid in stripe shapes. Heat treatment is then performed to thereby form light emitting layers luminescing each of the colors red, green, and blue. | 03-08-2012 |
20120061677 | SEMICONDUCTOR DEVICE - To provide a semiconductor device including a transistor formed using a highly reliable oxide semiconductor. To provide a semiconductor device which can be manufactured with high productivity and high yield by reducing the number of photolithography steps. The semiconductor device includes a first wiring, a second wiring, and a third wiring whose potential is lower than those of the first wiring and the second wiring between the first wiring and the second wiring. In the semiconductor device, the first wiring is electrically connected to the third wiring through a first transistor in which a gate electrode layer is electrically connected to a source electrode layer, the second wiring is electrically connected to the third wiring through a second transistor in which the gate electrode layer is electrically connected to the source electrode layer, and a continuous oxide semiconductor film used for a semiconductor region of the first transistor and the second transistor is provided above or below the first wiring, the second wiring, and the third wiring. | 03-15-2012 |
20120061678 | METHOD OF LASER ANNEALING SEMICONDUCTOR LAYER AND SEMICONDUCTOR DEVICES PRODUCED THEREBY - A laser annealing method includes forming a nitrogen-doped layer on a semiconductor layer, the nitrogen-doped layer having a nitrogen concentration of at least 3×10 | 03-15-2012 |
20120068185 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THE SAME - An organic light emitting diode (OLED) display and a method for manufacturing the same are provided. The OLED display includes a substrate, an active layer and a capacitor lower electrode positioned on the substrate, a gate insulating layer positioned on the active layer and the capacitor lower electrode, a gate electrode positioned on the gate insulating layer at a location corresponding to the active layer, a capacitor upper electrode positioned on the gate insulating layer at a location corresponding to the capacitor lower electrode, a first electrode positioned to be separated from the gate electrode and the capacitor upper electrode, an interlayer insulating layer positioned on the gate electrode, the capacitor upper electrode, and the first electrode, a source electrode and a drain electrode positioned on the interlayer insulating layer, and a bank layer positioned on the source and drain electrodes. | 03-22-2012 |
20120074420 | Organic light emitting diode display and manufacturing method thereof - An organic light emitting diode (OLED) display includes: a substrate; a semiconductor layer on the substrate; a gate insulating layer covering the semiconductor layer; a gate electrode formed in the gate insulating layer and overlapping the semiconductor layer; a pixel electrode formed in a pixel area over the gate insulating layer; an interlayer insulating layer covering the gate electrode and the gate insulating layer, and exposing the pixel electrode through a pixel opening; a source electrode and a drain electrode formed in the interlayer insulating layer and connected to the semiconductor layer; and a barrier rib covering the interlayer insulating layer, the source electrode, and the drain electrode, and the drain electrode contacts a side wall of the pixel opening and is connected to the pixel electrode. Such an OLED display may have an improved aperture ratio. | 03-29-2012 |
20120074421 | THIN-FILM TRANSISTOR ARRAY DEVICE, EL DISPLAY PANEL, EL DISPLAY DEVICE, THIN-FILM TRANSISTOR ARRAY DEVICE MANUFACTURING METHOD, EL DISPLAY PANEL MANUFACTURING METHOD - A thin-film transistor array device includes a passivation film above first and second bottom gate transistors. A source wire is below the passivation film. A gate wire and a relay electrode are above the passivation film. The gate wire is electrically connected to a gate electrode of the first transistor via a first hole in the passivation film. A conductive oxide film is between the passivation film and both the gate wire and the relay electrode and not electrically connected between the gate wire and the relay electrode. The conductive oxide film covers an end portion of the source wire that is exposed via a second hole in the passivation film. The conductive oxide film is between the relay electrode and a current-supply electrode of the second transistor and electrically connects the relay electrode and the current-supply electrode via a third hole in the passivation film. | 03-29-2012 |
20120074422 | THIN-FILM TRANSISTOR ARRAY DEVICE, EL DISPLAY PANEL, EL DISPLAY DEVICE, THIN-FILM TRANSISTOR ARRAY DEVICE MANUFACTURING METHOD, EL DISPLAY PANEL MANUFACTURING METHOD - A thin-film transistor array device includes a passivation film above first and second bottom gate transistors. A gate wire is below the passivation film. A source wire and a relay wire are above the passivation film. The source wire is electrically connected to a source electrode of the first transistor via a first hole in the passivation film. A conductive oxide film is between the passivation film and both the source wire and the relay electrode and not electrically connected between the source wire and the relay electrode. The conductive oxide film covers an end portion of the gate wire that is exposed via a second hole in the passivation film. The conductive oxide film is between the relay electrode and a current-supply electrode of the second transistor and electrically connects the relay electrode and the current-supply electrode via a third hole in the passivation film. | 03-29-2012 |
20120074423 | EL DISPLAY PANEL, EL DISPLAY APPARATUS, AND METHOD OF MANUFACTURING EL DISPLAY PANEL - An EL display panel includes an organic EL device and a thin film semiconductor unit. The organic EL device includes a lower electrode, an organic light-emitting layer, and an upper electrode. The thin film semiconductor unit includes a first gate electrode, a gate insulating film, a first source electrode, a second drain electrode formed in a same layer as the first source electrode, a first power supply line formed in a same layer as the second drain electrode, and a first interlayer insulating film formed on the first source electrode and the second drain electrode. A gate line connected to the first gate electrode, a second power supply line formed in a same layer as the gate line and connected to the first power supply line, and an auxiliary line formed in a same layer as the second power supply line and connected to the upper electrode are included. | 03-29-2012 |
20120080684 | THIN FILM TRANSISTOR AND FLAT PANEL DISPLAY DEVICE INCLUDING THE SAME - A thin film transistor (TFT) and a flat panel display device including the same. The TFT includes a substrate, a gate electrode formed over the substrate, the gate electrode formed with silicon doped with impurities, a gate wiring connected to the gate electrode, an active layer formed over the gate electrode, and source and drain electrodes connected to the active layer. According to such a structure, since heat flow to the gate electrode during crystallization of the active layer may be prevented, stable crystallization of the active layer may be performed, and thus an error rate of a product may be decreased. | 04-05-2012 |
20120080685 | Semiconductor Device and Method of Fabricating the Same - An active matrix display device having a pixel structure in which pixel electrodes, gate wirings and source wirings are suitably arranged in the pixel portions to realize a high numerical aperture without increasing the number of masks or the number of steps. The device comprises a gate electrode and a source wiring on an insulating surface, a first insulating layer on the gate electrode and on the source wiring, a semiconductor layer on the first insulating film, a second insulating layer on the semiconductor film, a gate wiring connected to the gate electrode on the second insulating layer, a connection electrode for connecting the source wiring and the semiconductor layer together; and a pixel electrode connected to the semiconductor layer. | 04-05-2012 |
20120086013 | THIN FILM TRANSISTOR, ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - A thin film transistor is provided, which comprises at least an active layer, a source electrode and a drain electrode, wherein the source electrode and the drain electrode are located on the active layer and spaced apart from each other; a channel is defined in the active layer between the source electrode and the drain electrode; edges of the active layer are aligned with outer edges of the source electrode and the drain electrode, the outer edge of the source electrode is an edge of the source electrode opposite to the drain electrode, and the outer edge of the drain electrode is an edge of the drain electrode opposite to the source electrode. Also, a method of manufacturing a thin film transistor is provided. | 04-12-2012 |
20120097965 | THIN FILM TRANSISTOR AND DISPLAY DEVICE USING THE SAME - In a thin film transistor and a display device provided with the same, a thin film transistor according to an exemplary embodiment includes: a semiconductor layer including a channel region, a source region, a drain region, a light-doped source region, and a light-doped drain region; a gate electrode overlapping the channel region; a source electrode contacting the source region; and a drain electrode contacting the drain region. The channel region includes a main channel portion, a source channel portion, and a drain channel portion, and the source channel portion and the drain channel portion are extended from the main channel portion and separated from each other. The light-doped source region is disposed between the source channel portion and the source region and the light-doped drain region is disposed between the drain channel portion and the drain region. | 04-26-2012 |
20120097966 | Thin Film Transistor, Organic Light Emitting Diode (OLED) Display Including the Same, and Manufacturing Methods of Them - The present invention relates generally to a thin film transistor, an organic light emitting diode (OLED) display including the same, and manufacturing methods of them. The thin film transistor comprises: a substrate; a gate electrode disposed on the substrate; a gate insulating layer disposed on the gate electrode; a semiconductor layer disposed on the gate insulating layer; an inter layer dielectric disposed on the entire surface of the substrate; and source and drain electrodes disposed on the inter layer dielectric and connected to the semiconductor layer, and in which the gate electrode is disposed so as to correspond to the entire surface of the semiconductor layer, and a manufacturing method thereof. The organic light emitting diode (OLED) display comprises the elements of the thin film transistor described above, and also includes an insulating film disposed on the entire surface of the substrate, and a first electrode, an organic layer, and a second electrode disposed on the insulating film, the first electrode being electrically connected to any one of the source and drain electrodes, and the gate electrode is disposed so as to correspond to the entire surface of the semiconductor layer. | 04-26-2012 |
20120097967 | Organic light-emitting display device and method of manufacturing the same - An organic light-emitting display device includes a buffer layer on a substrate that has a plurality of insulating layers having different refractive indexes, and at least one of the insulating layers have different thicknesses on the same level. The device further includes an active layer of a thin film transistor in a thick area of the buffer layer, a pixel electrode in a thin area of the buffer layer, a gate electrode of the thin film transistor on the active layer and source and drain electrodes of the thin film transistor connected to the active layer, and a gate insulating layer between the gate electrode and the source and drain electrodes. The device also includes an emission layer on the pixel electrode, an opposite electrode facing the pixel electrode, and the emission layer is between the opposite electrode and the pixel electrode. | 04-26-2012 |
20120104404 | HIGH LIGHT TRANSMITTANCE IN-PLANE SWITCHING LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - The present disclosure relates to a high light transmittance in-plan switching liquid crystal display device and a method for manufacturing the same. The liquid crystal display device includes: a substrate; a gate line disposed in horizontal direction on the substrate; a gate insulating layer covering the gate line; a data line disposed in vertical direction on the gate insulating layer; an additional insulating layer on the data line having same size and shape with the data line; a passivation layer covering the additional insulating layer; and a common electrode overlapping with the data line on the passivation layer. According to the present disclosure, the failure due to the parasitic capacitance and the load for driving the display panel are reduced and it is possible to make large and high definition display panel. | 05-03-2012 |
20120104405 | ARRAY SUBSTRATE FOR ORGANIC ELECTROLUMINESCENT DEVICE AND METHOD OF FABRICATING THE SAME - A method of fabricating an array substrate for an organic electroluminescent device includes forming a semiconductor layer of polysilicon in an element region, and a semiconductor pattern of polysilicon in a storage region on a substrate; forming a multiple-layered gate electrode corresponding to a center portion of the semiconductor layer and a first storage electrode corresponding to the semiconductor pattern; performing an impurity-doping to make a portion of the semiconductor layer not covered by the gate electrode into an ohmic contact layer and make the semiconductor pattern into a second storage electrode; forming source and drain electrodes and a third storage electrode corresponding to the first storage electrode; forming a first electrode contacting the drain electrode and a fourth storage electrode corresponding to the third storage electrode. | 05-03-2012 |
20120104406 | THIN-FILM TRANSISTOR, DISPLAY DEVICE, AND MANUFACTURING METHOD FOR THIN-FILM TRANSISTORS - Disclosed is a high-quality, efficiently manufacturable thin film transistor in which leakage current is minimized. The thin film transistor is provided with a semiconductor layer ( | 05-03-2012 |
20120112199 | THIN FILM TRANSISTOR ARRAY PANEL - A thin film transistor array panel according to an exemplary embodiment of the present invention floats all data lines during a manufacturing process by forming the data lines DL separate from each other and separate from the data pad connecting lines DLL, and only connecting the lines DL to the corresponding lines DLL after the data lines DL are etched. This reduces etching speed differences between data wires, thereby reducing the problem of differing thicknesses for different data lines DL. Therefore, it is possible to prevent performance deterioration or display quality deterioration of the transistor due to a thickness difference of data wires. | 05-10-2012 |
20120112200 | LIQUID CRYSTAL PANEL AND LIQUID CRYSTAL DISPLAY - A liquid crystal panel, comprising: an array substrate including: a display area, in which pixels disposed, wherein the pixel includes: a switching device; a lower electrode; an insulating layer formed on the lower electrode; an upper electrode, which has a plurality of slits to generate a fringe electric field; and a common signal line; a scanning line; a signal line crossing the scanning line; and a contact hole; and an opposite substrate, wherein one electrode of the upper electrode and the lower electrode is a pixel electrode connected to the switching element, and the other electrode thereof is a common electrode, wherein the signal line is disposed at every two pixels adjacent in a scanning line direction, wherein the contact hole is shared by the adjacent two pixels and is formed at an intervening region of the two adjacent pixels in which the signal line is not provided. | 05-10-2012 |
20120119217 | NONPLANAR DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - In one embodiment, a nonplanar display devise includes an array substrate and a counter substrate formed of non-glass material. The array substrate includes a polishing stopper layer formed on a glass substrate. A ground layer is formed on a polishing layer. A switching element is arranged on the ground layer, and a pixel electrode is connected to the switching element. The nonplanar display device is manufactures as follows. First, the glass substrate is removed from the display cell. Then, the polishing stopper layer of the array substrate is removed. Finally, the nonplanar display device is manufactured by attaching an exposed ground layer of the array substrate and an insulating layer formed of the non-glass material in the display cell. | 05-17-2012 |
20120126238 | SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS USING THE SAME - A semiconductor device with high function, multifunction and high added value. The semiconductor device includes a PLL circuit that is provided over a substrate and outputs a signal with a correct frequency. By providing such a PLL circuit over the substrate, a semiconductor device with high function, multifunction and high added value can be achieved. | 05-24-2012 |
20120132920 | Organic Light Emitting Display Device and Method for Manufacturing the Same - In an organic light emitting diode (OLED) display and a manufacturing method, an organic light emitting diode (OLED) display includes: a substrate; a semiconductor layer pattern formed on the substrate and including a first capacitor electrode; a gate insulating layer covering the semiconductor layer pattern; a first conductive layer pattern formed on the gate insulating layer and including a second capacitor electrode having at least a portion overlapping the first capacitor electrode; an interlayer insulating layer having a capacitor opening exposing a portion of the second capacitor electrode and covering the second capacitor electrode; and a second conductive layer pattern formed on the interlayer insulating layer, wherein the capacitor opening includes a first transverse side wall parallel to and overlapping the second capacitor electrode, a second transverse side wall parallel to and not overlapping the second capacitor electrode, and a longitudinal side wall connecting the first transverse side wall and the second transverse side wall to each other and overlapping the first capacitor electrode. | 05-31-2012 |
20120146040 | SUBSTRATE AND DISPLAY DEVICE INCLUDING THE SAME - Disclosed is a substrate for a display device that includes a composite material layer including an inorganic fiber material and a resin, and a metal layer disposed on the composite material layer, and a display device including the substrate. | 06-14-2012 |
20120146041 | ORGANIC LIGHT EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - An organic light emitting display apparatus includes a first substrate including a display region disposed in a center of one surface thereof and a bonding region formed along a closed loop to surround the display region; a semiconductor layer corresponding to the bonding region of the first substrate, formed along the closed loop to surround the display region, and comprising a polycrystal; at least one insulation layer formed over the semiconductor layer; a bonding member formed over the at least one insulation layer and formed in a region corresponding to the semiconductor layer; and a second substrate having the one surface disposed to face one surface of the first substrate and coupled to the bonding member to encapsulate the display region of the first substrate. | 06-14-2012 |
20120146042 | MICRO-CRYSTALLINE THIN FILM TRANSISTOR, DISPLAY DEVICE INCLUDING THE SAME AND MANUFACTURING METHOD THEREOF - A display device includes: a substrate; gate and data lines crossing each other on the substrate to define a pixel region; a thin film transistor that is connected to the gate and data lines, and includes a gate electrode, an active layer made of micro-crystalline silicon, and source and drain electrodes which are sequentially formed; a passivation layer on the thin film transistor; and a first electrode in the pixel region on the passivation layer and connected to the drain electrode, wherein a first overlap width between the drain electrode and the gate electrode is less than a second overlap width between the source electrode and the gate electrode. | 06-14-2012 |
20120146043 | SEMICONDUCTOR DEVICE, ACTIVE MATRIX SUBSTRATE, AND DISPLAY DEVICE - Provided are a semiconductor device that can be fabricated easily and can achieve leakage current reduction, without its structure becoming complex or the device becoming bulky; an active matrix substrate in which the device is used; and a display device in which the device is used. A switching portion ( | 06-14-2012 |
20120153292 | LIQUID CRYSTAL DISPLAY DEVICE - In a liquid crystal display device that uses a top gate TFT, a contact hole is formed to connect to an image signal line. An inorganic passivation film and an organic passivation film are formed in this order so as to cover the TFT, on which a common electrode is formed. Then, an interlayer insulating film is formed on the common electrode. A through hole for gas release is formed in the interlayer insulating film. The diameter of the through hole is greater than the diameter of the contact hole, so as to be able to easily release gas from the organic passivation film, and to prevent the interlayer insulating film from peeling off. | 06-21-2012 |
20120153293 | Display Device - There is provided an active matrix EL display device that can display a clear multi gray-scale color display to reduce the shift in the potential caused by the potential drop due to the wiring resistance of a power source supply line, in order to decrease the unevenness in a display region. A plurality of drawing out ports of the power source supply line are arranged. Further, in the wiring resistance between the external input terminal and the pixel portion power source supply line, potential compensation is performed by supplying potential to the power source supply line by a feedback amplifier. Further, in addition to above structure, the power source supply line may be arranged in a matrix. | 06-21-2012 |
20120168765 | Flexible Substrate and Display Device Including the Flexible Substrate - A flexible substrate for a display device comprises a polymer resin, an inorganic fiber material, and an antistatic agent, and has a surface resistivity of less than 10 | 07-05-2012 |
20120175627 | Dual Gate Layout for Thin Film Transistor - A dual gate layout of a thin film transistor of liquid crystal display to alleviate dark current leakage is disclosed. The layout includes (1) a polysilicon on a substrate having a shaped of L- or of snake from top-view, having a heavily doped source region, a first lightly doped region, a first gate channel, a second lightly doped region, a second gate channel, a third lightly doped region and a heavily doped drain region formed in order therein; (2) a gate oxide layer formed on the poly-Si layer and the substrate, (3) a gate metal layer then formed on the gate oxide layer having a scanning line and an extension portion with a L-shaped or an I-shaped. The gate metal intersects with the poly-Si layer thereto define the forgoing gate channels. Among of gate channels, at least one is along the signal line through a source contact. | 07-12-2012 |
20120181544 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE - An organic light-emitting display device includes a substrate; a thin-film transistor on the substrate; a first insulating layer covering the thin-film transistor; a first electrode on the first insulating layer, and electrically connected to the thin-film transistor; a second insulating layer on the first insulating layer so as to cover the first electrode, and having an opening for exposing a part of the first electrode; a porous member in the second insulating layer; a second electrode on the second insulating layer, and facing the first electrode so as to correspond to the opening; and an organic emission layer between the first electrode and the second electrode so as to correspond to the opening. The organic light-emitting display device may prevent degradation of characteristics of an organic light-emitting device due to discharge of gas from an organic material. | 07-19-2012 |
20120181545 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME, AND DISPLAY DEVICE PROVIDED WITH SEMICONDUCTOR DEVICE - A thin film diode ( | 07-19-2012 |
20120187411 | Semiconductor Device and Method for Manufacturing the Same - An object of the present invention is to prevent the deterioration of a TFT (thin film transistor). The deterioration of the TFT by a BT test is prevented by forming a silicon oxide nitride film between the semiconductor layer of the TFT and a substrate, wherein the silicon oxide nitride film ranges from 0.3 to 1.6 in a ratio of the concentration of N to the concentration of Si. | 07-26-2012 |
20120193635 | SEMICONDUCTOR DEVICE, PROCESS FOR PRODUCTION OF THE SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE EQUIPPED WITH THE SEMICONDUCTOR DEVICE - A thin film diode ( | 08-02-2012 |
20120205659 | CRYSTALLIZATION APPARATUS, CRYSTALLIZATION METHOD, AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY APPARATUS - An organic light-emitting display apparatus includes a substrate, a thin film transistor, a reflective layer, and an organic emission device. The thin film transistor includes an active layer patterned on the substrate at a predetermined interval, a gate electrode, and source/drain electrodes. The reflective layer is between the substrate and the active layer. The organic emission device has sequentially stacked therein a pixel electrode electrically connected to the TFT, an intermediate layer including an emission layer, and an opposing electrode. | 08-16-2012 |
20120205660 | METHOD OF MANUFACTURING THIN FILM TRANSISTOR, THIN FILM TRANSISTOR, AND DISPLAY UNIT - A thin film transistor having a crystalline silicon film that is formed over an insulating substrate with a gate electrode and a gate insulating film in between, and has a channel region in a region corresponding to the gate electrode; an insulating channel protective film that is selectively formed in a region corresponding to the channel region on the crystalline silicon film; an n+ silicon film having a source region and a drain region that sandwich a region corresponding to the channel region on the channel protective film and the crystalline silicon film; and a metal film having a source electrode and a drain electrode that respectively correspond to the source region and the drain region. | 08-16-2012 |
20120211758 | THIN-FILM TRANSISTOR DEVICE MANUFACTURING METHOD, THIN-FILM TRANSISTOR DEVICE, AND DISPLAY DEVICE - A thin-film transistor device manufacturing method of forming a crystalline silicon film of stable crystallinity using a laser of a wavelength in a visible region is provided. The thin-film transistor device manufacturing method forms a plurality of gate electrodes above a substrate. A gate insulation layer is formed on the plurality of gate electrodes. An amorphous silicon layer is formed on the gate insulation layer. The amorphous silicon layer is crystallized using predetermined laser light to produce a crystalline silicon layer. A source electrode and a drain electrode are formed on the crystalline silicon layer in a region that corresponds to each of the plurality of gate electrodes. A film thickness of the gate insulation layer and a film thickness of the amorphous silicon layer satisfy predetermined conditional expressions. | 08-23-2012 |
20120217502 | DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME - Provided is a display device which includes: a gate electrode; a first semiconductor layer in a crystallized state which is formed over the gate electrode; a source electrode and a drain electrode which are formed over the first semiconductor layer; and a second semiconductor layer which extends from a side of the first semiconductor layer and is interposed between one of the source electrode and the drain electrode and the first semiconductor layer, wherein the second semiconductor layer includes a first portion which is formed in a crystallized state and brought into contact with the first semiconductor layer, and a second portion which has lower crystallinity than the first portion. | 08-30-2012 |
20120223315 | DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME - Disclosed is a display device including: a gate electrode; a semiconductor layer formed into an island shape on an upper side of the gate electrode; a side wall oxide film formed on a lateral surface of the semiconductor layer; and a drain electrode and a source electrode formed on an upper side of the semiconductor layer extending from a lateral side of the semiconductor layer, wherein the side wall oxide film has a thickness of 2.1 nm or more. | 09-06-2012 |
20120223316 | THIN FILM TRANSISTOR AND DISPLAY DEVICE - Disclosed is a thin film transistor wherein an ON current is increased and a leak current is reduced. The channel layer | 09-06-2012 |
20120228623 | DISPLAY DEVICE AND ELECTRONIC DEVICE - Disclosed herein is a display device including: a thin film transistor; and a wiring layer; wherein the thin film transistor includes a semiconductor layer, a gate electrode disposed so as to be opposed to the semiconductor layer, the gate electrode being different in thickness from the wiring layer, and a gate insulating film between the semiconductor layer and the gate electrode. | 09-13-2012 |
20120228624 | IMAGE DISPLAY DEVICE - The image display device according to the present invention is an image display device where a pixel unit and an external connection terminal unit are provided on a substrate (SUB), and the pixel unit and the external connection terminal unit are connected by an aluminum wire (LN), having; an organic protective film (OPAS) directly covering the aluminum wire, except a contact hole (CH) of the external connection terminal unit and part of the pixel unit; and an ITO film (ITO) provided on the upper side of the organic protective film so as to cover the aluminum wire, including the external connection terminal unit and reaching to the pixel unit. | 09-13-2012 |
20120235153 | Semiconductor Device and Method of Manufacturing the Same - In a semiconductor device, gate signal lines are spaced apart from each other above a crystalline semiconductor film. Therefore a first protective circuit is not electrically connected when contact holes are opened in an interlayer insulating film. The static electricity generated during dry etching for opening the contact holes moves from the gate signal line, damages a gate insulating film, passes the crystalline semiconductor film, and again damages the gate insulating film before it reaches the gate signal line. As the static electricity generated during the dry etching damages the first protective circuit, the energy of the static electricity is reduced until it loses the capacity of damaging a driving circuit TFT. The driving circuit TFT is thus prevented from suffering electrostatic discharge damage. | 09-20-2012 |
20120235154 | Semiconductor Device - To realize a semiconductor device including a capacitor element capable of obtaining a sufficient capacitor without reducing an opening ratio, in which a pixel electrode is flattened in order to control a defect in orientation of liquid crystal. A semiconductor device of the present invention includes a light-shielding film formed on the thin film transistor, a capacitor insulating film formed on the light-shielding film, a conductive layer formed on the capacitor insulating film, and a pixel electrode that is formed so as to be electrically connected to the conductive layer, in which a storage capacitor element comprises the light-shielding film, the capacitor insulating film, and the conductive layer, whereby an area of a region serving as the capacitor element can be increased. | 09-20-2012 |
20120235155 | DISPLAY DEVICE - The present invention is intended to suppress power consumption of an EL display. In accordance with the brightness of an image to be displayed in a pixel portion, the contrast of the image is determined whether to be inverted or not, and the number of bits of the digital video signal to be input into the pixel portion is reduced, and the magnitude of a current to flow through the EL element is allowed to be maintained at a constant level even when a temperature of an EL layer changes by providing the EL display with another EL element to be used for monitoring a temperature. | 09-20-2012 |
20120248454 | EL Display Device and Manufacturing Method Thereof - Reducing the manufacturing cost of an EL display device and an electronic device furnished with the EL display device is taken as an objective. A textured structure in which projecting portions are formed on the surface of a cathode is used. External stray light is diffusely (irregularly) reflected by the action of the projecting portions when reflected by the surface of the cathode, and therefore a defect in which the face of an observer or the surrounding scenery is reflected in the surface of the cathode can be prevented. This can be completed without using a conventionally necessary high price circular polarizing film, and therefore it is possible to reduce the cost of manufacturing the EL display device. | 10-04-2012 |
20120256186 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - Disclosed is an organic light-emitting display device including a transparent substrate which includes a display portion and a pad portion formed in a region around the display portion, a first semiconductor layer formed on the display portion, a second semiconductor layer formed on the pad portion, and a transparent electrode formed on each of the first the second semiconductor layers, where the first and second semiconductor layers include the same material. | 10-11-2012 |
20120261670 | BACK-SIDE ILLUMINATED IMAGE SENSOR WITH A JUNCTION INSULATION - A method for forming a back-side illuminated image sensor, including the steps of: a) forming, from the front surface, doped polysilicon regions, of a conductivity type opposite to that of the substrate, extending in depth orthogonally to the front surface and emerging into the first layer; b) thinning the substrate from its rear surface to reach the polysilicon regions, while keeping a strip of the first layer; c) depositing, on the rear surface of the thinned substrate, a doped amorphous silicon layer, of a conductivity type opposite to that of the substrate; and d) annealing at a temperature capable of transforming the amorphous silicon layer into a crystallized layer. | 10-18-2012 |
20120261671 | DISPLAY DEVICE AND MANUFACTURING METHOD OF THE DISPLAY DEVICE - It is an object of the present invention to provide a technique to manufacture a highly reliable display device at a low cost with high yield. A display device according to the present invention includes a semiconductor layer including an impurity region of one conductivity type; a gate insulating layer, a gate electrode layer, and a wiring layer in contact with the impurity region of one conductivity type, which are provided over the semiconductor layer; a conductive layer which is formed over the gate insulating layer and in contact with the wiring layer; a first electrode layer in contact with the conductive layer; an electroluminescent layer provided over the first electrode layer; and a second electrode layer, where the wiring layer is electrically connected to the first electrode layer with the conductive layer interposed therebetween. | 10-18-2012 |
20120267634 | Display Device and Electronic Equipment Using the Same - In an active matrix EL display device, pixels which are suitable for a constant current drive are structured. The pixel includes a first switch which has one end connected to a source signal line and the other end connected to a current-voltage conversion element, a second switch which has one end connected to the current-voltage conversion element and the other end connected to a voltage holding capacitor and to a voltage-current conversion element, and a pixel electrode connected to the current-voltage conversion element and to the voltage-current conversion element. | 10-25-2012 |
20120267635 | THIN FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY APPARATUS HAVING THE SAME - In a method of manufacturing a thin film transistor substrate, a semiconductor pattern is formed on a substrate, a first etch stop layer and a second etch stop layer are sequentially formed on the semiconductor pattern, and the second etch stop layer and the first etch stop layer are sequentially patterned to form a second etch stop pattern and a first etch stop pattern. Thus, when the second etch stop layer is patterned using an etchant, the first etch stop layer covers the semiconductor pattern, thereby preventing the semiconductor pattern from being etched by the etchant. | 10-25-2012 |
20120286281 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display device includes a thin film transistor (TFT) including an active layer, a gate electrode comprising a first electrode and a second electrode, a source electrode, and a drain electrode, a photoresist layer on the source electrode and the drain electrode, a pixel electrode electrically coupled to the TFT, comprising a same material as the first electrode, and at a same layer as the first electrode, a pixel defining layer having a hole exposing the pixel electrode, the pixel defining layer covering the photoresist layer, an intermediate layer on the pixel electrode and comprising a light-emitting layer, and an opposite electrode covering the intermediate layer and facing the pixel electrode. | 11-15-2012 |
20120286282 | THIN-FILM TRANSISTOR DEVICE MANUFACTURING METHOD, THIN-FILM TRANSISTOR DEVICE, AND DISPLAY DEVICE - A thin-film transistor device manufacturing method for forming a crystalline silicon film of stable crystallinity using a visible wavelength laser includes: a process of forming a plurality of gate electrodes above a substrate; a process of forming a silicon nitride layer on the plurality of gate electrodes; a process of forming a silicon oxide layer on the silicon nitride layer; a process of forming an amorphous silicon layer on the silicon oxide layer; a process of crystallizing the amorphous silicon layer using predetermined laser light to produce a crystalline silicon layer; and a process of forming a source electrode and a drain electrode on the crystalline silicon layer in a region that corresponds to each of the plurality of gate electrodes. A film thickness of the silicon oxide layer, a film thickness of the silicon nitride layer, and a film thickness of the amorphous silicon layer satisfy predetermined conditional expressions. | 11-15-2012 |
20120286283 | EL Display device and Method for Manufacturing the Same - Plurality of pixels ( | 11-15-2012 |
20120292628 | THIN FILM TRANSISTOR, ARRAY SUBSTRATE AND PREPARATION METHOD THEREOF - One or more embodiments of the disclosed technology provide a thin film transistor, an array substrate and a method for preparing the same. The thin film transistor comprises a base substrate, and a gate electrode, a gate insulating layer, an active layer, an ohmic contact layer, a source electrode, a drain electrode and a passivation layer prepared on the base substrate in this order. The active layer is formed of microcrystalline silicon, and the active layer comprises an active layer lower portion and an active layer upper portion, and the active layer lower portion is microcrystalline silicon obtained by using hydrogen plasma to treat at least two layers of amorphous silicon thin film prepared in a layer-by-layer manner. | 11-22-2012 |
20120299007 | THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THIN FILM TRANSISTOR, AND ORGANIC LIGHT EMITTING DIODE DISPLAY - There is provided a thin film transistor including an active layer on a substrate (the active layer including polysilicon and a metal catalyst dispersed in the polysilicon, a source area, a drain area, and a channel area), a gate electrode disposed on the channel area of the active layer, a source electrode electrically connected to the source area, and a drain electrode electrically connected to the drain area, wherein the gate electrode, the source area, and the drain area of the active layer include metal ions, the source area and the drain area are separate from each other, and the channel is disposed between the source area and the drain area. | 11-29-2012 |
20120299008 | LIQUID CRYSTAL DISPLAY DEVICE - Techniques are provided for unifying steps of sealing material so that the yield and the reliability of a liquid-crystal display device become high. A starting film of scanning lines is patterned so that prismatic dummy wirings | 11-29-2012 |
20120299009 | Method of Manufacturing Thin Film Transistor - The object of the present invention is to form a low-concentration impurity region with good accuracy in a top gate type TFT. Phosphorus is added to a semiconductor layer by using a pattern made of a conductive film as a mask to form an N-type impurity region in a self-alignment manner. A positive photoresist is applied to a substrate so as to cover the pattern and then is exposed to light applied to the back of the substrate and then is developed, whereby a photoresist | 11-29-2012 |
20120305930 | SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD FOR SAME - A semiconductor device of the present invention includes an n-channel first thin film transistor and a p-channel second thin film transistor on one and the same substrate. The first thin film transistor has a first semiconductor layer ( | 12-06-2012 |
20120319122 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE INCLUDING BLACK MATRIX-CONTAINING NEUTRAL DENSITY FILM - An organic light-emitting display device including: a substrate; a plurality of pixels each including a first electrode, a second electrode, and an organic emission layer interposed between the first electrode and the second electrode; and a black matrix-containing neutral density (ND) film formed in a direction in which light is emitted from the plurality of pixels. | 12-20-2012 |
20120319123 | Display Device and Method of Manufacturing the Same - A display device may include a first substrate comprising a display region and a non-display region surrounding the display region, a first metal wiring formed in the display region of the first substrate, a second metal wiring formed in the non-display region of the first substrate, a sealing member formed on the second metal wiring, and a second substrate disposed on the sealing member so as to face the first substrate. The first metal wiring and the second wiring are made of the same material. | 12-20-2012 |
20120319124 | THIN FILM TRANSISTOR SUBSTRATE AND LIQUID CRYSTAL DISPLAY DEVICE HAVING THE SAME - A display device with a display region and a non-display region surrounding the display region, the display device comprising: a first substrate and a second substrate. The first substrate comprises: a first insulating substrate; a gate line formed on the first insulating substrate; a pixel thin film transistor formed on the display region and electrically connected to the gate line; a pixel electrode electrically connected to the pixel thin film transistor; a gate driver formed on the non-display region and connected to the gate line; and a direct current (DC)/DC converter formed on the non-display region and having a capacitance part. The capacitance part includes: a first capacitance part with a first electrode, a first dielectric layer, and a second electrode; and a second capacitance part with the second electrode, a second dielectric layer, and a third electrode. | 12-20-2012 |
20120326157 | Method of Manufacturing Thin Film Transistor, Thin Film Transistor Manufactured Using the Method, Method of Manufacturing Organic Light-Emitting Display Apparatus, and Organic Light-Emitting Display Apparatus Manufactured Using the Method - A method of manufacturing a TFT, including forming a buffer layer, an amorphous silicon layer, an insulating layer, and a first conductive layer on a substrate, forming a polycrystalline silicon layer by crystallizing the amorphous silicon layer, forming a semiconductor layer, a gate insulating layer, and a gate electrode that have a predetermined shape by simultaneously patterning the polycrystalline silicon layer, the insulating layer, and the first conductive layer, wherein the polycrystalline silicon layer is further etched to produce an undercut recessed a distance compared to sidewalls of the insulating layer and the first conductive layer, forming source and drain regions within the semiconductor layer by doping corresponding portions of the semiconductor layer, forming an interlayer insulating layer on the gate electrode, the interlayer insulating layer covering the gate insulating layer and forming source and drain electrodes that are electrically connected to source and drain regions respectively. | 12-27-2012 |
20120326158 | FLAT PANEL DISPLAY AND METHOD OF MANUFACTURING THE SAME - A flat panel display having a thin-film transistor (TFT) and a pixel unit and a method of manufacturing the same are disclosed. In one embodiment, the method includes forming a step difference layer having a relatively high step and a relatively low step on a substrate and forming an amorphous silicon layer on the step difference layer along a height shape of the step difference layer. The method further includes crystallizing the amorphous silicon layer into a crystalline silicon layer and polishing the crystalline silicon layer to form a planarized surface of the crystalline silicon layer having no height differences so that the crystalline silicon layer remains on a region corresponding to the low step and an active layer is formed. According to this method, crystallization protrusions are effectively removed from the active layer, and thus, stable brightness characteristics of the display apparatus are guaranteed. | 12-27-2012 |
20130001579 | Array Substrate for Fringe Field Switching Mode Liquid Crystal Display and Method of Manufacturing the Same - A method of manufacturing an array substrate for a fringe field switching mode liquid crystal display includes: forming an auxiliary insulating layer having a first thickness; forming first and second photoresist patterns on the auxiliary insulating layer; performing an ashing to remove the second photoresist pattern and expose the auxiliary insulating layer therebelow; performing a dry etching to remove the auxiliary insulating layer not covered by the first photoresist pattern and expose a first passivation layer and to form an insulating pattern below the first photoresist pattern, the insulating pattern and the first photoresist pattern forming an undercut shape; forming a transparent conductive material layer having a fourth thickness less than the first thickness; and performing a lift-off process to remove the first photoresist pattern and the transparent conductive material layer thereon together and form a pixel electrode. | 01-03-2013 |
20130001580 | THIN FILM TRANSISTOR AND ORGANIC LIGHT EMITTING DIODE DISPLAY USING THE SAME AND METHOD FOR MANUFACTURING THE SAME - A thin film transistor includes an active layer on a substrate and crystallized through growth of crystals due to an action of metal catalysts, a gate insulating layer pattern on a part of the active layer; a gate electrode on a part of the gate insulating layer pattern; an anti-etching layer pattern formed on the gate insulating layer pattern to cover the gate electrode, the anti-etching layer pattern being coextensive with the gate insulating layer pattern; a source electrode and a drain electrode on the active layer and the anti-etching layer pattern; and gettering layer patterns between the active layer and the anti-etching layer pattern and between the source electrode and the drain electrode to eliminate the metal catalysts used for crystallization of the active layer, the gettering layer patterns being coextensive with the source electrode and drain electrode. | 01-03-2013 |
20130001581 | ACTIVE MATRIX LIQUID CRYSTAL DISPLAY DEVICE - A first insulating thin film having a large dielectric constant such as a silicon nitride film is formed so as to cover a source line and a metal wiring that is in the same layer as the source line. A second insulating film that is high in flatness is formed on the first insulating film. An opening is formed in the second insulating film by etching the second insulating film, to selectively expose the first insulating film. A conductive film to serve as a light-interruptive film is formed on the second insulating film and in the opening, whereby an auxiliary capacitor of the pixel is formed between the conductive film and the metal wiring with the first insulating film serving as a dielectric. | 01-03-2013 |
20130001582 | Semiconductor Device and A Method of Manufacturing the Same - A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained. | 01-03-2013 |
20130001583 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - This invention provides a semiconductor device having high operation performance and high reliability. An LDD region | 01-03-2013 |
20130009162 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE - An organic light-emitting display device may include a substrate; a plurality of thin film transistors (TFTs) on the substrate; a plurality of first electrodes respectively on the TFTs; a pixel-defining layer between the first electrodes, the pixel-defining layer including a covered portion and an uncovered portion; a plurality of organic layers respectively on the first electrodes, each organic layer including an emission layer; a second electrode covering at least a part of the organic layers and the pixel-defining layer, a portion of the pixel-defining layer covered by the second electrode defining the covered portion, wherein at least one outgassing hole is in the uncovered portion of the pixel-defining layer, the uncovered portion being an exposed area of the pixel-defining layer. | 01-10-2013 |
20130009163 | SEMICONDUCTOR DEVICE, ACTIVE MATRIX SUBSTRATE, AND DISPLAY DEVICE - A semiconductor device that includes a substrate | 01-10-2013 |
20130015459 | THIN FILM TRANSISTOR ARRAY SUBSTRATE, ORGANIC LIGHT-EMITTING DISPLAY DEVICE INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE ORGANIC LIGHT-EMITTING DISPLAY DEVICEAANM Lee; June-WooAACI Yongin-CityAACO KRAAGP Lee; June-Woo Yongin-City KRAANM Choi; Jae-BeomAACI Yongin-CityAACO KRAAGP Choi; Jae-Beom Yongin-City KRAANM Jung; Kwan-WookAACI Yongin-CityAACO KRAAGP Jung; Kwan-Wook Yongin-City KRAANM Oh; Jae-HwanAACI Yongin-CityAACO KRAAGP Oh; Jae-Hwan Yongin-City KRAANM Jin; Seong-HyunAACI Yongin-CityAACO KRAAGP Jin; Seong-Hyun Yongin-City KRAANM Kim; Kwang-HaeAACI Yongin-CityAACO KRAAGP Kim; Kwang-Hae Yongin-City KRAANM Choi; Jong-HyunAACI Yongin-CityAACO KRAAGP Choi; Jong-Hyun Yongin-City KR - A thin film transistor (TFT) array substrate includes a TFT on a substrate, the TFT including an active layer, gate electrode, source electrode, drain electrode, first insulating layer between the active layer and the gate electrode, and second insulating layer between the gate electrode and the source and drain electrodes; a pixel electrode on the first insulating layer and the second insulating layer, the pixel electrode being connected to one of the source electrode and drain electrode; a capacitor including a lower electrode on a same layer as the gate electrode and an upper electrode including the same material as the pixel electrode; a third insulating layer directly between the second insulating layer and the pixel electrode and between the lower electrode and the upper electrode; and a fourth insulating layer covering the source electrode, the drain electrode, and the upper electrode, and exposing the pixel electrode. | 01-17-2013 |
20130020579 | Display Device - A display device which can suppress waveform distortion and lowered transmission coefficient of pixels, and suppress display irregularity is provided. In a display device having pixels arranged in a delta arrangement, a pixel includes a pixel portion which comprises a TFT including a source electrode, a drain electrode and a gate electrode, a common electrode and a pixel electrode, an organic passivation film has asymmetrical opening portions above a contact portion of the source electrode, and the orientations of the asymmetrical opening portions in the organic passivation films of pixels adjacent to each other are the same. | 01-24-2013 |
20130037818 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display device includes a thin film transistor including an active layer, a gate electrode, source/drain electrodes, a first insulating layer between the active layer and the gate electrode, and a second insulating layer over the gate electrode; a pixel electrode on the first insulating layer and the second insulating layer and connected to the source or drain electrode; a first wire on the first insulating layer, of the same material as the gate electrode; a second wire on the second insulating layer to at least partially overlap the first wire and including a lower wiring layer of the same material as the pixel electrode and an upper wiring layer on the lower wiring layer, of the same material as the source/drain electrodes; and third insulating layers between the second insulating layer and the pixel electrode and between the second insulating layer and the second wire. | 02-14-2013 |
20130049002 | THIN FILM TRANSISTOR OF DISPLAY PANEL AND METHOD OF MAKING THE SAME - A thin film transistor (TFT) includes a gate electrode, a gate insulating layer, a first protective pattern, a second protective pattern, a source electrode, a drain electrode, a semiconductor channel layer, and a passivation layer. The first protective pattern and the second protective pattern are disposed on the gate insulating layer above the gate electrode. The source electrode is disposed on the gate insulating layer and the first protective pattern. The drain electrode is disposed on the gate insulating layer and the second protective pattern. The semiconductor channel layer is disposed on the gate insulating layer, the source electrode, and the drain electrode. In an extending direction from the source electrode to the drain electrode, a length of the first protective pattern is shorter than that of the source electrode, and a length of the second protective pattern is shorter than that of the drain electrode. | 02-28-2013 |
20130049003 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - An OLED device is disclosed. The OLED device includes: a substrate defined into an active area in which a plurality of pixels are formed in a matrix shape, a GIP (gate-in-panel) area in which drive elements are formed, a ground contact area, and a seal line area; a thin film transistor formed in each pixel region within the active area; an organic light emission diode formed on a protective film and configured to include a first electrode, an organic light emission layer and a second electrode; a bank layer formed to divide the organic light emission diode into pixel units; a signal wiring formed in the ground contact area and the seal line area; and an extended portion formed from the same material as the first electrode of the organic light emission diode and configured to cover the signal wiring. | 02-28-2013 |
20130049004 | THIN-FILM TRANSISTOR ARRAY MANUFACTURING METHOD, THIN-FILM TRANSISTOR ARRAY, AND DISPLAY DEVICE - A method of manufacturing a thin-film transistor array includes: forming a gate insulating layer on gate electrodes; forming an amorphous silicon layer on the gate insulating layer; generating a crystalline silicon layer by crystallizing the amorphous silicon layer; and forming source electrodes and drain electrodes. The thicknesses of the gate insulating layer on the gate electrode is within a range in which there is a positive correlation between light absorbances of the amorphous silicon layer above the gate electrodes for the laser light and equivalent oxide thicknesses of the gate insulating layer on the gate electrodes. The thicknesses of the amorphous silicon layer above the gate electrodes is within a range in which variation of the light absorbances according to variation of the thicknesses of the amorphous silicon layer is within a predetermined range from a first standard. | 02-28-2013 |
20130069070 | MANUFACTURING METHOD FOR DISPLAY DEVICE HAVING A PLURALITY OF THIN FILM TRANSISTORS AND DISPLAY DEVICE FORMED THEREBY - A manufacturing method of a thin film transistor includes: forming semiconductor layers for a plurality of thin film transistors over a substrate; forming an insulating layer covering the semiconductor layers; and forming a metal layer over the insulating layer. The method further includes: patterning the metal layer to form mask patterns; doping first ions using a first mask pattern among the mask patterns into a first semiconductor layer among the semiconductor layers to simultaneously form source region/a drain regions and an active region of the first thin film transistor; and doping second ions using a second mask pattern among the mask patterns into a second semiconductor layer among the semiconductor layers to form a source region and a drain region of the second thin film transistor. | 03-21-2013 |
20130075744 | DISPLAY APPARATUS - Provided is a display apparatus using an organic EL device in which blur in a display image to be a problem for the display apparatus is reduced while propagating light propagating through a high-refractive-index transparent layer is efficiently extracted outside. The display apparatus has a configuration in which a high-refractive-index transparent layer is provided on a light exit side of the organic EL device, a light extraction structure is provided on the high-refractive-index transparent layer so as to surround each of subpixels, a visible light absorbing member is arranged between pixels adjacent to each other, and the visible light absorbing member is not arranged in a region between subpixels adjacent to each other within a pixel. | 03-28-2013 |
20130075745 | THIN-FILM SEMICONDUCTOR DEVICE, DISPLAY APPARATUS, AND METHOD FOR MANUFACTURING THIN-FILM SEMICONDUCTOR DEVICE - A thin-film semiconductor device includes: a first gate line; a metal line; a first gate electrode extending from the first gate line; a second gate electrode on the first gate electrode; an insulating layer provided in a crossing area where the first gate line and the metal line cross; and a second gate line formed in the same layer as the second gate electrode, and on the first gate line in other than the crossing area, wherein the metal line is on the insulating layer, the second gate line and the second gate electrode are thicker than the first gate line and the first gate electrode, and an interface between the metal line and the insulating layer is positioned above a top surface of the second gate electrode, in a cross section in a direction in which the first and second gate lines extend. | 03-28-2013 |
20130082270 | THIN-FILM TRANSISTOR ARRAY DEVICE, EL DISPLAY PANEL, EL DISPLAY DEVICE, THIN-FILM TRANSISTOR ARRAY DEVICE MANUFACTURING METHOD, EL DISPLAY PANEL MANUFACTURING METHOD - A thin-film transistor array includes first and second bottom-gate transistors, a passivation film, a conductive oxide film below the passivation film, and a relay electrode between a first conductive material in a same layer as a first electrode of the first transistor and a second conductive material in an electroluminescence layer. A first line is in a layer lower than the passivation film and a second line is above the passivation film. A terminal to which an external signal is input is provided in a periphery of the substrate in the same layer as the first electrode. The conductive oxide film covers an upper surface of the terminal and is between the relay electrode and the first conductive material. The relay electrode is formed in a same layer and comprises a same material as the second line. | 04-04-2013 |
20130082271 | THIN-FILM SEMICONDUCTOR DEVICE FOR DISPLAY APPARATUS, METHOD FOR MANUFACTURING THIN-FILM SEMICONDUCTOR DEVICE FOR DISPLAY APPARATUS, EL DISPLAY PANEL, AND EL DISPLAY APPARATUS - A thin-film semiconductor device for a display apparatus according to the present disclosure includes: a gate electrode above a substrate; a gate insulating film above the gate electrode; a semiconductor layer on the gate insulating film; a first electrode above the semiconductor layer; a second electrode in a same layer as the first electrode; an interlayer insulating film covering the first electrode and the second electrode; a gate line above the interlayer insulating film; and a power supply line in a same layer as the gate line and adjacent to the gate line. Furthermore, the gate electrode and the gate line are electrically connected via a first conductive portion, and the second electrode and the power supply line are electrically connected via a second conductive portion. | 04-04-2013 |
20130082272 | ACTIVE MATRIX SUBSTRATE - Disclosed is an active matrix substrate ( | 04-04-2013 |
20130087800 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - The present invention relates to a thin film transistor array panel and a manufacturing method thereof that prevent disconnection of wiring due to misalignment of a mask, and simplify a process and reduce cost by reducing the number of masks. The thin film transistor array panel according to the disclosure includes a source electrode enclosing an outer part of the first contact hole and formed on the second insulating layer; a drain electrode enclosing an outer part of the second contact hole and formed on the second insulating layer; a first connection electrode connecting the source region of the semiconductor layer and the source electrode through the first contact hole; and a second connection electrode connecting the drain region of the semiconductor layer and the drain electrode through the second contact hole. | 04-11-2013 |
20130087801 | LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A break on a video signal line is prevented during patterning on the video signal line. A video signal line, a drain electrode, and a source electrode are simultaneously formed in the same layer. The video signal line includes three layers: a base layer, an AlSi layer, and a cap layer. Conventionally, an alloy having a high etching rate is formed at the boundary between the AlSi layer and the cap layer, causing breakage during patterning on the video signal line. According to the present invention, in the formation of the video signal line, the AlSi layer is formed by sputtering, a TFT is exposed to the atmosphere to form an Al oxide layer on the surface of the AlSi layer, and then the cap layer is formed by sputtering. Thus, the formation of an alloy having a high etching rate on a part of the AlSi layer is prevented, precluding the occurrence of a break on the video signal line. | 04-11-2013 |
20130087802 | THIN FILM TRANSISTOR, FABRICATION METHOD THEREFOR, AND DISPLAY DEVICE - It is an object to increase the mobility of a thin film transistor having an active layer including a microcrystalline semiconductor film. Upon fabricating an inverted staggered type TFT | 04-11-2013 |
20130112984 | FLEXIBLE DISPLAY APPARATUS - A flexible display apparatus is disclosed. The flexible display apparatus includes: a substrate on which a display unit for displaying an image, a non-display area formed outside the display unit, and at least one pad for inputting an electrical signal to the display unit are located; and a circuit board including circuit terminals to be electrically connected to the at least one pad. A stiffener including a plurality of reinforcement lines that are patterned to reduce or prevent thermal deformation of the substrate is formed on the substrate. | 05-09-2013 |
20130119392 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display device having a thin film transistor including an active layer, a gate electrode, a lower gate electrode, an upper gate electrode, an insulating layer covering the gate electrode, source and drain electrodes that are formed on the insulating layer and contact the active layer. An organic light-emitting diode is electrically connected to the thin film transistor and includes a pixel electrode formed at the same layer level as the lower gate electrode, an intermediate layer including an emission layer, and a counter electrode. A lower pad electrode is formed at the same layer level as the lower gate electrode and an upper pad electrode is formed at the same layer level as the upper gate electrode. | 05-16-2013 |
20130126883 | Wiring Material, Semiconductor Device Provided with a Wiring Using the Wiring Material and Method of Manufacturing Thereof - A semiconductor device having good TFT characteristics is realized. By using a high purity target as a target, using a single gas, argon (Ar), as a sputtering gas, setting the substrate temperature equal to or less than 300° C., and setting the sputtering gas pressure from 1.0 Pa to 3.0 Pa, the film stress of a film is made from −1×10 | 05-23-2013 |
20130134431 | THIN-FILM TRANSISTOR ARRAY MANUFACTURING METHOD, THIN-FILM TRANSISTOR ARRAY, AND DISPLAY DEVICE - Preparing a substrate; forming a plurality of gate electrodes above the substrate; forming a gate insulating layer above the gate electrodes; forming an amorphous silicon layer above the gate insulating layer; forming crystalline silicon layer regions by irradiating the amorphous silicon layer in regions above the gate electrodes with a laser beam having a wavelength from 473 nm to 561 nm so as to crystallize the amorphous silicon layer in the regions above the gate electrodes, and forming an amorphous silicon layer region in a region other than the regions above the gate electrodes; and forming source electrodes and drain electrodes above the crystalline silicon layer regions are included, and a thickness of the gate insulating layer and a thickness of the amorphous silicon layer satisfy predetermined expressions. | 05-30-2013 |
20130134432 | SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATING THE SAME - A multi-layered gate electrode of a crystalline TFT is constructed as a clad structure formed by deposition of a first gate electrode, a second gate electrode and a third gate electrode, to thereby to enhance the thermal resistance of the gate electrode. Additionally, an n-channel TFT is formed by selective doping to form a low-concentration impunty region which adjoins a channel forming region, and a sub-region overlapped by the gate electrode and a sub-region not overlapped by the gate electrode, to also mitigate a high electric field near the drain of the TFT and to simultaneously prevent the OFF current of the TFT from increasing. | 05-30-2013 |
20130153914 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display device includes a thin film transistor on a substrate, a first wiring and a second wiring overlapping each other, the first and second wirings being at different heights relative to the substrate and being connected to the thin film transistor, and a plurality of insulating layers between the first wiring and the second wiring. | 06-20-2013 |
20130153915 | ORGANIC LIGHT EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE ORGANIC LIGHT EMITTING DISPLAY APPARATUS - An organic light-emitting display apparatus includes a substrate including a plurality of red, green, and blue sub-pixel regions, a pixel electrode in each of the plurality of the red, green, and blue sub-pixel regions on the substrate, a Distributed Bragg Reflector (DBR) layer between the substrate and the pixel electrodes, a high-refractive index layer between the substrate and the DBR layer in the blue sub-pixel region, the high-refractive index layer having a smaller area than an area of a corresponding pixel electrode in the blue sub-pixel region, an intermediate layer including an emissive layer on the pixel electrode, and an opposite electrode on the intermediate layer. | 06-20-2013 |
20130161632 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY APPARATUS - An OLED apparatus including a thin film transistor including an activation layer, a gate electrode insulated from the activation layer and including a lower gate electrode and an upper gate electrode, an interlayer insulation film covering the gate electrode, and a source and drain electrode on the insulation film and contacting the activation layer; an OLED including a pixel electrode electrically connected to the thin film transistor, an intermediate layer including an emissive layer, and an opposite electrode; a blister prevention layer on a same level as the activation layer; a gate insulation layer covering the activation layer and the blister prevention layer and insulating the activation layer from the gate electrode; and an interconnection unit including first and second layers on a portion of the gate insulation layer overlying the blister prevention layer, wherein the blister prevention layer protects the interconnection unit on the gate insulation layer from blistering. | 06-27-2013 |
20130175536 | EL DISPLAY DEVICE, DRIVING METHOD THEREOF, AND ELECTRONIC EQUIPMENT PROVIDED WITH THE EL DISPLAY DEVICE - An EL display device capable of performing clear multi-gradation color display and electronic equipment provided with the EL display device are provided, wherein gradation display is performed according to a time-division driving method in which the luminescence and non-luminescence of an EL element ( | 07-11-2013 |
20130187167 | THIN FILM TRANSISTOR ARRAY PANEL AND ORGANIC LIGHT EMITTING DIODE DISPLAY INCLUDING THE SAME, METHOD FOR CUTTING WIRE IN THIN FILM TRANSISTOR ARRAY PANEL - A thin film transistor display panel includes a plurality of pixels arranged in a matrix format, the plurality of pixels include thin film transistors, respectively, a plurality of first signal lines connected with the pixels, a plurality of second signal lines connected with the pixels, the plurality of second signal lines cross the first signal lines in an insulated manner, at least one of the second signal lines includes a cut portion, and an organic repairing member overlaps the cut portion | 07-25-2013 |
20130200385 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a thin film transistor (TFT) array substrate and a method for manufacturing the same. A transparent and electrically conductive layer and a first metal layer are deposited on a substrate, and a first multi tone mask is utilized to form gate electrodes and common electrodes. A gate insulating layer, a semiconductor layer and a second metal layer are deposited on the substrate, and a second multi tone mask is utilized to form source electrodes, drain electrodes and pixel electrodes. The present invention can simplify the manufacturing process thereof. | 08-08-2013 |
20130221361 | SEMICONDUCTOR DISPLAY DEVICE - It is an object of the present invention to provide a semiconductor display device having an interlayer insulating film which can obtain planarity of a surface while controlling film formation time, can control treatment time of heating treatment with an object of removing moisture, and can prevent moisture in the interlayer insulating film from being discharged to a film or an electrode adjacent to the interlayer insulating film. An inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover a TFT. Next, an organic resin film containing photosensitive acrylic resin is applied to the organic insulting film, and the organic resin film is partially exposed to light to be opened. Thereafter, an inorganic insulting film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover the opened organic resin film. Then, in the opening part of the organic resin film, a gate insulating film and the two layer inorganic insulating film containing nitrogen are opened partially by etching to expose an active layer of the TFT. | 08-29-2013 |
20130221362 | Electro-Optical Device and Electronic Device - An object of the present invention is to provide an EL display device, which has a high operating performance and reliability. | 08-29-2013 |
20130228786 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE - An organic light-emitting display device including a thin film transistor (TFT) on a substrate; an organic light emitting diode (OLED) electrically connected to the TFT, the OLED including a pixel electrode, an organic layer, and an opposite electrode; a pixel defining layer (PDL) on the pixel electrode, the PDL including an opening that exposes at least one portion of the pixel electrode; and a light scattering layer between the pixel electrode and the organic layer. | 09-05-2013 |
20130234144 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - RC delay in gate lines of a wide display is reduced by using a low resistivity conductor in the gate lines and a different conductor for forming corresponding gate electrodes. More specifically, a corresponding display substrate includes a gate line made of a first gate line metal, a data line made of a first data line metal, a pixel transistor and a first connection providing part. The pixel transistor includes a first active pattern formed of polycrystalline silicon (poly-Si) and a first gate electrode formed there above and made of a conductive material different from the first gate line metal. The first connection providing part connects the first gate electrode to the gate line. On the other hand, the source electrode is integrally extended from the data line. | 09-12-2013 |
20130256676 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR REPAIRING ORGANIC LIGHT EMITTING DIODE DISPLAY - An organic light emitting diode (OLED) display includes a first electrode, an organic emission layer positioned on the first electrode, and a second electrode positioned on the organic emission layer. The OLED display includes a substrate, a thin film transistor including an active layer positioned on the substrate, a gate electrode positioned on the active layer and formed with the same layer as the first electrode, and a source electrode and a drain electrode positioned on the gate electrode and connected to the active layer, a pixel defining layer positioned between the source electrode and the drain electrode, and the second electrode, the pixel defining layer including a pixel opening exposing the first electrode and a pin hole opening exposing at least one of the source electrode and the drain electrode; and a coated portion filling the pin hole opening. | 10-03-2013 |
20130256677 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A display device is provided, which includes a transparent substrate, an active device array, a solar cell structure and an electrophoretic display film. The transparent substrate has an upper surface and a lower surface opposite to each other. The active device array has a plurality of pixel structures, in which the pixel structures are disposed on the upper surface of the transparent substrate. The solar cell structure is directly disposed on the lower surface of the transparent substrate. The electrophoretic display film is disposed over the transparent substrate and includes a transparent protection film, an electrode layer and a plurality of display media, in which the electrode layer is disposed between the transparent protection film and the display media and the display media are located between the electrode layer and the active device array. | 10-03-2013 |
20130256678 | THIN FILM TRANSISTOR ARRAY SUBSTRATE - The present invention provides a thin film transistor array substrate that can eliminate short-circuiting between a source electrode and a drain electrode, while ensuring electrical connection between the drain electrode and a pixel electrode. The thin film transistor array substrate has a thin film transistor, a first interlayer insulating film, a lower layer electrode, a second interlayer insulating film, and an upper layer electrode laminated therein in this order. The first interlayer insulating film has a first through hole in a region where the drain electrode of the thin film transistor is disposed, the second interlayer insulating film has a second through hole in a region where the first through hole is disposed, the lower layer electrode has a portion on the first interlayer insulating film and a portion in the first through hole separated from each other, the drain electrode has a portion covered with the first interlayer insulating film, and a portion in contact with a portion of the lower layer electrode in the first through hole, and the portion of the lower layer electrode in the first through hole is in contact with a portion of an upper layer electrode disposed in the second through hole. | 10-03-2013 |
20130270570 | METHOD OF MANUFACTURING THIN FILM TRANSISTOR - The object of the present invention is to form a low-concentration impurity region with good accuracy in a top gate type TFT. Phosphorus is added to a semiconductor layer by using a pattern made of a conductive film as a mask to form an N-type impurity region in a self-alignment manner. A positive photoresist is applied to a substrate so as to cover the pattern and then is exposed to light applied to the back of the substrate and then is developed, whereby a photoresist | 10-17-2013 |
20130277679 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A high performance electric device which uses an adhesive layer over a substrate. A color filter is over a substrate, and an adhesive layer is also located over the substrate and color film. An insulating layer is over the adhesive layer, and thin film transistors cover the insulating film and the color filters. Light emitting elements cover the thin film transistors and emit light through the substrate that is through the adhesive layer and color filter. The substrate may be plastic, thus increasing the heat resistance. | 10-24-2013 |
20130285063 | THIN-FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - The present invention discloses a thin-film transistor (TFT) array substrate and a manufacturing method thereof. Depositing a transparent conductive layer and a first metal layer on a substrate, which is patterned by a multi-tone mask (MTM) to form a gate, a common electrode and a reflecting layer; depositing a gate insulation layer, which is patterned by a first mask to remain the gate insulation layer on the gate; depositing a semiconductor layer, which is patterned by a second mask to remain the semiconductor layer on the gate; and depositing a second metal layer, which is patterned by a third mask to form a source and a drain. | 10-31-2013 |
20130299838 | THIN-FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD FOR THE SAME - A thin-film transistor (TFT) array substrate and manufacturing method thereof are disclosed herein. A first metal layer is deposited on a substrate, and a first mask is utilized for patterning the first metal layer to form a gate. A gate insulative layer and a semiconductive layer are deposited on the substrate, and a second mask is utilized to pattern the semiconductive layer except which above the gate is retained. A transparent conductive layer and a second metal layer are disposed on the substrate, and a multi-stage mask adjustment is used for patterning the transparent conductive layer and the second metal layer to form a source, a drain and a common electrode. A reflective layer is formed with the second metal layer on the common electrode. | 11-14-2013 |
20130299839 | SEMICONDUCTOR DEVICE INCLUDING SEMICONDUCTOR CIRCUIT MADE FROM SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREOF - In the present invention, a semiconductor film is formed through a sputtering method, and then, the semiconductor film is crystallized. After the crystallization, a patterning step is carried out to form an active layer with a desired shape. The present invention is also characterized by forming a semiconductor film through a sputtering method, subsequently forming an insulating film. Next, the semiconductor film is crystallized through the insulating film, so that a crystalline semiconductor film is formed. According this structure, it is possible to obtain a thin film transistor with a good electronic property and a high reliability in a safe processing environment. | 11-14-2013 |
20140021478 | Display panel - A display panel includes a plurality of pads configured to provide a driver thereon, a plurality of first contacts respectively connected to the plurality of pads, a plurality of second contacts respectively provided so as to be opposed to the plurality of first contacts, a semiconductor layer configured to form a plurality of polysilicon films that are respectively extended to connect the plurality of first contacts and the plurality of second contacts to each other, and a gate metal layer different from the polysilicon layer. Each of a plurality of transistors is formed at a position where the gate metal layer traverses the polysilicon layer, and a plurality of transistor groups of the plurality of transistors are arranged in a zigzag pattern. Each of the plurality of transistor groups include three adjacent transistors of the plurality of transistors. | 01-23-2014 |
20140042445 | System and Method for Fabricating a 3D Image Sensor Structure - A system and method for fabricating a 3D image sensor structure is disclosed. The method comprises providing an image sensor with a backside illuminated photosensitive region on a substrate, applying a first dielectric layer to the first side of the substrate opposite the substrate side where image data is gathered, and applying a semiconductor layer that is optionally polysilicon, to the first dielectric layer. A least one control transistor may be created on the first dielectric layer, within the semiconductor layer and may optionally be a row select, reset or source follower transistor. An intermetal dielectric may be applied over the first dielectric layer; and may have at least one metal interconnect disposed therein. A second interlevel dielectric layer may be disposed on the control transistors. The dielectric layers and semiconductor layer may be applied by bonding a wafer to the substrate or via deposition. | 02-13-2014 |
20140048813 | METHOD FOR FABRICATING THIN-FILM SEMICONDUCTOR DEVICE AND THIN-FILM SEMICONDUCTOR DEVICE - A thin-film semiconductor device) having two thin-film transistors, wherein one of the thin-film transistors includes: a first gate electrode; a first gate insulating film; a first semiconductor film; an intrinsic semiconductor layer; a first contact layer of n-type in contact with and above a portion of the intrinsic semiconductor layer; a first source electrode; and a first drain electrode, and the other of the thin-film transistors includes: a second gate electrode; a second gate insulating film; a second semiconductor film; an intrinsic semiconductor layer; a second contact layer of p-type in contact with portions of sides of the semiconductor film and the intrinsic semiconductor layer; a second source electrode; and a second drain electrode. | 02-20-2014 |
20140048814 | FILM SEMICONDUCTOR DEVICE, DISPLAY DEVICE USING SUCH THIN FILM SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A thin film semiconductor device formed as integrated circuits on an insulating substrate with bottom gate type thin film transistors stacked with gate electrodes, a gate insulating film and a semiconductor thin film in the order from below upward. The gate electrodes comprise metallic materials with thickness less than 100 nm. The gate insulating film has a thickness thicker than the gate electrodes. The semiconductor thin film comprises polycrystalline silicon crystallized by a laser beam. By reducing thickness of metallic gate electrodes, thermal capacity becomes small and difference in thermal condition on the metallic gate electrodes and on the insulating substrate made of glass or the like becomes small. This invention relates to the task of uniforming and optimizing recrystallization by a laser anneal treatment provided for the semiconductor thin film which works as an active layer of the bottom gate type thin film transistors. | 02-20-2014 |
20140061656 | Two Doping Regions in Lightly Doped Drain for Thin Film Transistors and Associated Doping Processes - A method is provided for fabricating thin-film transistors (TFTs) for an LCD having an array of pixels. The method includes depositing a first photoresist layer over a portion of a TFT stack that includes a conductive gate layer, and a semiconductor layer. The method also includes doping the exposed semiconductor layer with a first doping dose. The method further includes etching a portion of the conductive gate layer to expose a portion of the semiconductor layer, and doping the exposed portion of the semiconductor layer with a second doping dose. The method also includes depositing a second photoresist layer over a first portion of the doped semiconductor layer in an active area of the pixels to expose a second portion of the doped semiconductor layer in an area surrounding the active area, and doping the second portion of the doped semiconductor layer with a third doping dose. | 03-06-2014 |
20140061657 | ARRAY SUBSTRATE FOR ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An array substrate for an organic electroluminescent display device includes a substrate including a display area and a non-display area; a gate line and a data line; a thin film transistor including a semiconductor layer of polycrystalline silicon, a gate insulating layer, a gate electrode, an inter insulating layer, a source electrode, and a drain electrode; auxiliary lines formed of a same material and on a same layer as the data line; a passivation layer of organic insulating material and including a drain contact hole exposing the drain electrode, and an auxiliary line contact hole exposing one of the auxiliary lines; and a first electrode and a line connection pattern on the passivation layer, wherein the first electrode contacts the drain electrode and the line connection pattern contacts the one of the first auxiliary pattern. | 03-06-2014 |
20140070225 | Hydrogenation and Crystallization of Polycrystalline Silicon - A TFT stack for a liquid crystal display is provided. The TFT stack includes a silicon layer that includes a heavily doped region, a non-doped region, and a lightly doped region between the heavily doped region and the non-doped region. The heavily doped region is hydrogenated. The TFT stack also includes an insulation layer that includes a first portion formed over the lightly doped region and a second portion disposed over the non-doped region and a gate metal electrode layer formed over the second portion of the non-doped region. The TFT stack also includes a first dielectric layer disposed over the gate metal electrode and over the first portion of the insulation layer. The heavily doped region is hydrogenated to reduce the dependence of the capacitance between the gate metal electrode and the conductive layer C | 03-13-2014 |
20140077216 | POLY-SILICON TFT, POLY-SILICON ARRAY SUBSTRATE AND PREPARING METHOD THEREOF, DISPLAY DEVICE - Provided are a poly-silicon thin film transistor (TFT), a poly-silicon array substrate and a preparing method thereof, and a display device for solving the problems of excessive mask plates, complicated process and high costs in a conventional technology. The method of preparing the poly-silicon TFT comprising a doped region comprises steps: forming a poly-silicon layer on a substrate, forming an active layer by a patterning process; forming a first insulating layer; forming, by a patterning process, via holes exposing the active layer, the source electrode and the drain electrode being connected through the via holes to the active layer; doping the active layer through the via holes by a doping process to form a doped region; forming a source-drain metal layer, and forming the source electrode and the drain electrode by a patterning process. | 03-20-2014 |
20140097440 | FLEXIBLE DISPLAY PANEL - A flexible display panel includes a first display region that is flat, second display regions located at both sides of the first display region and curved by a predetermined angle, a plurality of pixels formed in the first display region, and a plurality of pixels formed in the second display regions, Each of the plurality of pixels formed in the first display region and the second display regions includes a light-emitting diode and a driving thin-film transistor (TFT) connected to the light-emitting diode, the driving TFT supplying a driving current to the light-emitting diode. A size of the driving TFT varies for each of the plurality of pixels formed in the second display regions so that driving currents supplied by driving TFTs in the second display regions vary in one direction with respect to boundaries between the first display region and the second display regions. | 04-10-2014 |
20140103349 | DIFFERENT LIGHTLY DOPED DRAIN LENGTH CONTROL FOR SELF-ALIGN LIGHT DRAIN DOPING PROCESS - A method is provided for fabricating thin-film transistors (TFTs) for an LCD having an array of pixels. The method includes depositing a first photoresist layer over a portion of a TFT stack. The TFT stack includes a conductive gate layer, and a semiconductor layer. The method also includes doping the exposed semiconductor layer with a first doping dose. The method further includes etching a portion of the conductive gate layer to expose a portion of the semiconductor layer, and doping the exposed portion of the semiconductor layer with a second doping dose. The method also includes removing the first photoresist layer, and depositing a second photoresist layer over a first portion of the doped semiconductor layer in an active area of the pixels to expose a second portion of the doped semiconductor layer in an area surrounding the active area. The method further includes doping the second portion of the doped semiconductor layer with a third doping dose, the first dose being higher than the second dose and the third dose. | 04-17-2014 |
20140103350 | Pixel electrode structure and display using the same - The present invention relates to a pixel electrode structure, comprising: at least one scanning line disposed on a substrate; at least one data line disposed on the substrate and intersecting the scanning line to define a pixel area; a pixel electrode disposed in the pixel area; an active element comprising a gate electrode, a source electrode and a drain electrode, wherein the gate electrode is electrically connected to the scanning line, the source electrode is electrically connected to the data line, and the drain electrode is electrically connected to the pixel electrode; and a shielding electrode overlapping one side of the scanning line and electrically connected to the pixel electrode with a first connecting part, wherein the shielding electrode has a jag structure, and the first connecting part is disposed at a junction between jags of the jag structure protruding in different orientations. | 04-17-2014 |
20140103351 | Low Temperature Poly-Silicon Thin Film Transistor, Manufacturing Method thereof, and Display Device - The present invention discloses a low temperature poly-silicon thin film transistor, a manufacturing method thereof, and a display device. Particularly, a metal film is formed between source and drain electrodes and a first conductive layer, and the metal film reacts with the poly-silicon of the source and drain electrodes to form metal silicide, whereby activating the source and drain electrodes at a low temperature. As such, the temperature of the manufacturing process of low temperature poly-silicon thin film transistor can be confined to 350° C. or lower. | 04-17-2014 |
20140110719 | ARRAY SUBSTRATE, MANUFACTURING METHOD THEREFOR AND DISPLAY DEVICE - Provided is a manufacturing method for an array substrate, which relates to the technical field of displaying and comprises the steps of: S1: forming a pattern which comprises a first gate electrode ( | 04-24-2014 |
20140117370 | ARRAY SUBSTRATE, DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A manufacturing method of an arrayed substrate is disclosed, in which ion-doping is performed by using photoresist as a barrier layer instead of using a gate electrode, which process can reduces the short channel effect that is caused by diffusion of doped ions toward a channel region, and meanwhile decrease the coupling capacitance between the gate electrode and the source-drain electrodes, thereby improving the performance of the prepared TFT. | 05-01-2014 |
20140117371 | ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE - Embodiments of the present invention relate to an array substrate, a manufacturing method thereof and a display device. The manufacturing method of the array substrate comprises: preparing a base substrate; forming a gate electrode pattern on the base substrate; forming a gate insulating layer pattern on the base substrate with the gate electrode pattern formed thereon; and forming an active layer pattern, a pixel electrode pattern and source and drain patterns above the gate insulating layer pattern through a three-gray-tone mask process in one patterning process, wherein the gate electrode pattern, the active layer pattern, the source pattern and the drain pattern constitute a thin film transistor. | 05-01-2014 |
20140117372 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND PRODUCING METHOD THEREOF - Disclosed are a thin film transistor array substrate and a producing method thereof in the embodiments of the present invention, the producing method comprising: forming an active layer thin film and a conductive layer thin film on a substrate; depositing a source/drain electrode layer thin film on the conductive layer thin film, treating the conductive layer thin film and the source/drain electrode layer thin film using gray tone or half tone masking process, to form at least two data lines, a pixel electrode and source/drain electrodes of the thin film transistor (TFT); after depositing an insulating layer thin film covered the active layer thin film, the source/drain electrodes, the data lines and the pixel electrode, forming a through hole and a gate insulating layer of the TFT on the insulating layer, to form an active layer of the TFT; forming a gate electrode of the TFT and at least two gate scanning lines cross with the data wires. | 05-01-2014 |
20140124787 | THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE - Embodiments of the present invention provide a thin film transistor, a manufacturing method thereof and a display device. The method for manufacturing the thin film transistor, comprising the following steps: providing a substrate; forming a semiconductor layer on the substrate; forming a gate insulating layer; and forming a gate electrode, wherein the gate insulating layer comprises a first gate insulating layer, the first gate insulating layer being formed by oxidizing a portion of the semiconductor layer, and the unoxidized portion of the semiconductor layer forming an active layer, and wherein the gate electrode is formed in such a way that the gate insulating layer is sandwiched between the gate electrode and the active layer. | 05-08-2014 |
20140131719 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - This invention aims at reducing the probability of short-circuiting between terminals in a display device in which an IC driver is connected by COG. Terminals for connection with the IC driver are formed in a terminal region of a TFT substrate. The terminals are each comprised of a terminal metal, a first through-hole formed in a first insulation film, a second through-hole formed in a second insulation film, a first ITO formed in the first through-hole and being in contact with the terminal metal, and a second ITO formed over the first ITO. The second ITO is formed within an area where the second ITO is in contact with the first ITO but is not formed outside the second through-hole. This ensures that the distance between the ITOs of the adjacent terminals can be enlarged, whereby the probability of short-circuiting between the terminals can be lowered. | 05-15-2014 |
20140138695 | LOW TEMPERATURE POLYCRYSTALLINE SILICON THIN FILM AND METHOD OF PRODUCING THE SAME, ARRAY SUBSTRATE AND DISPLAY APPARATUS - A method for producing a low temperature polycrystalline silicon thin film, comprising steps of: providing a substrate; forming a thermal conduction and electrical insulation layer, a buffer layer and an amorphous silicon layer on the substrate in this order; and performing a high-temperature treatment and a laser annealing on the amorphous silicon layer to convert the amorphous silicon layer to a polycrystalline silicon thin film, wherein the thermal conduction and electrical insulation layer comprises regular patterns distributed on the substrate. | 05-22-2014 |
20140145199 | Array Substrate and Method for Fabricating Array Substrate, and Display Device - The present invention discloses an array substrate, a method for fabricating an array substrate, and a display device, the array substrate includes: a base substrate; a TFT, a gate line, a data line and a pixel electrode formed on the base substrate, the TFT includes: a bottom gate, a first gate insulating layer, an active layer, a second gate insulating layer, a top gate, a gate isolation layer and a source electrode and a drain electrode sequentially formed on the base substrate; wherein, the source electrode and the drain electrode are in contact with the active layer through a first via hole and a second via hole passing through the gate isolation layer and the second insulating layer, respectively; the pixel electrode is in contact with the drain electrode. | 05-29-2014 |
20140145200 | ARRAY SUBSTRATE, FABRICATION METHOD THEREOF AND DISPLAY DEVICE - Embodiments of the present invention provide an array substrate and a fabrication method thereof, and a display device, the array substrate comprises gate lines, data lines, and pixel units defined by the gate lines and the data lines crossing with each other, and each pixel unit comprises a first TFT, whose gate is electrically connected with the gate line, wherein each pixel unit further comprises an auxiliary turn-on structure for forming a turn-on voltage at a channel of the first TFT when the first TFT is switched into conduction. In the embodiments of the present invention, a dual-drive voltage for the first TFT is formed by the auxiliary turn-on structure together with the gate of the first TFT, so that when the turn-on voltage provided by the gate lines is relatively low, the channel of the first TFT can also be turned on, therefore lowering power consumption. | 05-29-2014 |
20140151708 | THIN FILM TRANSISTOR, DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A thin film transistor and a method of manufacturing the same, and a display device and a method of manufacturing the same are disclosed, in which the thin film transistor substrate comprises an active layer formed on a substrate; a gate electrode controlling electron transfer within the active layer; a source electrode connected with one end area of the active layer; a drain electrode connected with the other end area of the active layer; and a light-shielding layer formed under the active layer to shield light from entering the active layer. | 06-05-2014 |
20140151709 | DISPLAY PANEL AND PRODUCTION METHOD FOR SAME - Provided is a display panel having a plurality of pixels arranged in a matrix of rows and columns. Each of the pixels is composed of a plurality of first sub-pixels emitting light of different colors. Each of the first sub-pixels is composed of a plurality of second sub-pixels emitting light of the same color. Each of the second sub-pixels includes: a first electrode; a second electrode above the first electrode; and a light-emitting layer between the first electrode and the second electrode. | 06-05-2014 |
20140159046 | FLEXIBLE DISPLAY SUBSTRATE, THE MANUFACTURING METHOD THEREOF AND A FLEXIBLE DISPLAY DEVICE - The present invention provides a flexible display substrate, the manufacturing method thereof and a flexible display device, relates to the field of flexible display technology, and can solve the technical problems that the existing flexible display substrate is easy to be damaged during deforming, has small amount of deformation, degraded display performance or high costs, or has difficulty in manufacturing process. The flexible display substrate according to the present invention comprising a hard material layer disposed at the fragile positions of the flexible display substrate. The manufacturing method for the flexible display substrate according to the present invention comprises forming a pattern of a hard material layer. The flexible display device of the present invention comprises the flexible display substrate mentioned above. The present invention is applicable to flexible display devices such as flexible organic electroluminescent display device, flexible electrophoretic display device, or liquid crystal display device. | 06-12-2014 |
20140175448 | ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE - An array substrate, a manufacturing method thereof and a display device are provided. As for the method of manufacturing the array substrate, the common electrode and the pixel electrode are formed by a single process simultaneously. | 06-26-2014 |
20140175449 | TFT ARRANGEMENT FOR DISPLAY DEVICE - A new TFT arrangement is demonstrated, which enables prevention of TFT to be formed over a joint portion between the adjacent SOI layers prepared by the process including the separation of a thin single crystal semiconductor layer from a semiconductor wafer. The TFT arrangement is characterized by the structure where a plurality of TFTs each belonging to different pixels is gathered and arranged close to an intersection portion of a scanning line and a signal line. This structure allows the distance between regions, which are provided with the plurality of TFTs, to be extremely large compared with the distance between adjacent TFTs in the conventional TFT arrangement in which all TFTs are arranged in at a regular interval. The formation of a TFT over the joint portion can be avoided by the present arrangement, which leads to the formation of a display device with a negligible amount of display defects. | 06-26-2014 |
20140183539 | ULTRA HIGH RESOLUTION LIQUID CRYSTAL DISPLAY HAVING A COMPENSATING THIN FILM TRANSISTOR AT EACH PIXEL - The present disclosure relates to an ultra high-resolution liquid crystal display having a compensating thin film transistor at each pixel. The present disclosure suggests a thin film transistor substrate comprising: gate lines running in horizontal direction and data lines running in vertical direction which define a plurality of pixel area on a substrate; a first gate electrode and a second gate electrode formed by dividing any one gate line disposed at any one of an upper side and a lower side; a first thin film transistor connected to the first gate electrode; and a second thin film transistor connected to the first thin film transistor and the second gate electrode. The flat panel display according to the present disclosure has an ultra high-density resolution over 300PPI with the high aperture ratio. | 07-03-2014 |
20140183540 | Display Device - There is provided an active matrix EL display device that can display a clear multi gray-scale color display to reduce the shift in the potential caused by the potential drop due to the wiring resistance of a power source supply line, in order to decrease the unevenness in a display region. A plurality of drawing out ports of the power source supply line are arranged. Further, in the wiring resistance between the external input terminal and the pixel portion power source supply line, potential compensation is performed by supplying potential to the power source supply line by a feedback amplifier. Further, in addition to above structure, the power source supply line may be arranged in a matrix. | 07-03-2014 |
20140183541 | THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY DEVICE - A thin film transistor and a manufacturing method for the same, an array substrate, and a display device are disclosed. The thin film transistor comprises: a substrate ( | 07-03-2014 |
20140183542 | LIGHT EMITTING DEVICE - There is provided a light emitting device which enables a color display with good color balance. A triplet compound is used for a light emitting layer of an EL element that emits red color, and a singlet compound is used for a light emitting layer of an EL element that emits green color and a light emitting layer of an EL element that emits blue color. Thus, an operation voltage of the EL element emitting red color may be made the same as the EL element emitting green color and the EL element emitting blue color. Accordingly, the color display with good color balance can be realized. | 07-03-2014 |
20140191239 | DISPLAY DEVICE - Disclosed is a display device and an electronic apparatus incorporating the display device. The display device includes a transistor and a planarization film over the transistor. The planarization film has an opening where an edge portion is rounded. The display device further includes a first electrode over the planarization film and an organic resin film over the first electrode. The organic resin film also has an opening where an edge portion is rounded. The organic resin film is located in the opening of the planarization film. The first electrode and the transistor are electrically connected to each other through a conductive film. The first electrode is in contact with a top surface of the conductive film. Over the first electrode, a light-emitting member and a second electrode are provided. | 07-10-2014 |
20140197417 | METHOD FOR PRODUCING DISPLAY PANEL, AND DISPLAY PANEL - In a method for producing a display panel, a base substrate having an upper surface on which an electrode is located is prepared. A first layer having a first opening overlapping with the electrode in plan-view is formed on the base substrate. A second layer having a second opening overlapping with the first opening in plan-view is formed on the first layer. The second opening has a smaller area than the first opening in plan-view. A wiring layer is formed in the first opening and the second opening, in contact with the electrode. The second layer includes a portion located on an upper surface of the first layer and a portion located in the first opening. The portion of the second layer located in the first opening covers an internal side surface of the first layer located around the first opening. | 07-17-2014 |
20140203285 | ELECTROOPTIC DEVICE SUBSTRATE, ELECTROOPTIC DEVICE, AND ELECTRONIC APPARATUS - An electrooptic device substrate includes a scan line that is provided on an element substrate, a foundation insulating layer, a semiconductor layer provided on the foundation insulating layer, a gate insulating layer, recesses that are provided at both sides of the semiconductor layer so as to penetrate through the foundation insulating layer and the gate insulating layer, a gate electrode that is provided on the gate insulating layer and is electrically connected to the scan line in the recesses, an insulating interlayer that covers the gate insulating layer, the gate electrode, and the recesses, and a data line that is provided on the insulating interlayer so as to overlap with the scan line, the semiconductor layer, the gate electrode, and the recesses. The recesses include first recesses that overlap with the scan line and second recesses that extend to outer sides of the scan line. | 07-24-2014 |
20140203286 | Electro-Optical Device and Electronic Device - An object of the present invention is to provide an EL display device, which has a high operating performance and reliability. A third passivation film | 07-24-2014 |
20140209913 | Array Substrate And Display Device Comprising The Same - An array substrate, which is formed with a gate electrode ( | 07-31-2014 |
20140209914 | DISPLAY UNIT, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - A display unit includes: a display layer including a pixel electrode; a semiconductor layer provided in a layer below the display layer, the semiconductor layer including a wiring layer that includes a material removable by an etchant by which the pixel electrode is also removable; and a terminal section configured to electrically connect the semiconductor layer to an external circuit, the terminal section including a first electrically-conductive layer made of a material same as a material of the wiring layer. | 07-31-2014 |
20140209915 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - A thin film transistor (TFT) array panel and a manufacturing method thereof are disclosed. A contact hole may be formed to expose a pad disposed on a substrate of the TFT array panel. A first layer of a connecting member is formed with the same layer as a first field generating electrode and is disposed in the contact hole. A second passivation layer is disposed in the TFT array panel, but is removed at a region where the contact hole is formed and portions of the second passivation layer that cover the first layer of the connecting member. A second layer of the connecting member is formed on the first layer of the connecting member. | 07-31-2014 |
20140209916 | Semiconductor Device and A Method of Manufacturing the Same - A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained. | 07-31-2014 |
20140209917 | DISPLAY DEVICE WITH THRESHOLD CORRECTION - A display device comprises a first pixel circuit and a second pixel circuit adjacent to the first pixel circuit along a first direction. The first pixel circuit includes a first transistor and a first electro-optic element, and the second pixel circuit includes a second transistor and a second electro-optic element. A power supply line extends along the first direction. A connection wiring is connected between the first transistor and the second transistor, and is connected to the power supply line via a contact portion having at least two contact holes. | 07-31-2014 |
20140217415 | THIN FILM TRANSISTOR AND ORGANIC LIGHT-EMITTING DISPLAY - A thin film transistor including: a substrate; an active layer formed over the substrate; a gate insulating layer formed over the active layer; a gate electrode formed over the gate insulating layer; an interlayer insulating layer formed over the gate electrode; and source and drain electrodes that contact the active layer via the interlayer insulating layer. The source and drain electrodes may have a structure including an aluminum (Al) layer, an aluminum-nickel alloy (AlNiX) layer, and an indium tin oxide (ITO) layer, which are sequentially stacked. | 08-07-2014 |
20140231814 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME - In a thin film transistor array panel and a method of manufacturing the same, a thin passivation layer is positioned between a first field generating electrode and a second field generating electrode. The thin passivation layer overlaps the first and second field generating electrodes. The thin passivation layer includes a transparent photosensitive organic material. When forming the first field generating electrode, the passivation layer is used as a photosensitive film. Accordingly, the passivation layer and the first field generating electrode may be formed using a same single photo-mask. Accordingly, the manufacturing cost of the thin film transistor array panel may be reduced. | 08-21-2014 |
20140239304 | DISPLAY DEVICE - According to one embodiment, a display device includes a semiconductor including a first channel region, a second channel region, a source region, a drain region, a first region located between the source region and the first channel region, a second region formed between the first channel region and the second channel region, and a third region located between the drain region and the second channel region, wherein the second region has a length of 5 μm or more, which is greater than a length of each of the first region and the third region. | 08-28-2014 |
20140252364 | THIN FILM TRANSISTOR ARRAY PANEL - A thin film transistor (TFT) array panel includes: first and second pixel electrodes neighboring each other; a data line extending between the first and the second pixel electrodes; first and second gate lines extending perpendicularly to the data line; a first TFT including a first gate electrode connected to the first gate line, a first source electrode connected to the data line, and a first drain electrode facing the first source electrode and connected to the first pixel electrode; and a second TFT including a second gate electrode connected to the second gate line, a second source electrode connected to the data line, and a second drain electrode facing the second source electrode and connected to the second pixel electrode. The first source electrode has the same relative position with respect to the first drain electrode as the second source electrode with respect to the second drain electrode. | 09-11-2014 |
20140252365 | THIN FILM TRANSISTOR ARRAY AND EL DISPLAY EMPLOYING THEREOF - EL display has a luminescence unit having a luminescence layer being disposed between a pair of electrodes and a thin film transistor array unit controlling luminescence of the luminescence unit. An interlayer insulation film is disposed between the luminescence unit and the transistor array unit. An anode of the luminescence unit is connected electrically to the thin film transistor array via a contact hole of the interlayer insulation film. The thin film transistor array further has a current supplying relaying electrode that is connected to the anode of the luminescence unit via the contact hole of the interlayer insulation film. A diffusion prevention film is formed on the boundary face of the anode of the luminescence unit and the relaying electrode. | 09-11-2014 |
20140264356 | DIMENSIONALLY-STABLE, DAMAGE-RESISTANT, GLASS SHEETS - Described herein are aluminoborosilicate glass compositions that are substantially alkali-free and exhibit desirable physical and chemical properties for use as substrates in flat panel display devices, such as, active matrix liquid crystal displays (AMLCDs). The glass compositions can be formed into glass sheets by, for example, the float process. When used as substrates, the glass sheets exhibit dimensional stability during processing and damage resistance during cutting. | 09-18-2014 |
20140264357 | DISPLAY PANEL - A display device includes a plurality of pixel units. Each of the pixel units at least includes three sub-pixels for displaying different colors. The three sub-pixels are electrically connected to three different gate lines, and at least two of the three sub-pixels are electrically connected to the same data line. | 09-18-2014 |
20140284608 | LASER ANNEALING APPARATUS AND METHOD, AND DISPLAY APPARATUS MANUFACTURED BY THIS METHOD - A laser annealing apparatus reduces laser annealing time and has a simple configuration. A laser annealing method is used to manufacture a display apparatus. The laser annealing apparatus includes a mounting unit, a substrate mounted on the mounting unit, first and second driving modules installed on the mounting unit and adjusting locations of first and second mark masks to be placed on a part of the substrate, first and second image modules that may obtain image data regarding the first and second mark masks to be location-adjusted by first and second driving modules, and a laser module that radiates a laser beam to the substrate and changes at least a part of an amorphous silicon layer of the substrate to crystalline silicon. | 09-25-2014 |
20140291687 | DISPLAY UNIT, MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPARATUS - Provided is a display unit that includes: a laminated structure including two first wirings, a first insulating layer, and a concave part, in which the first wirings are adjacent to each other, the first insulating layer is provided on the first wirings and is made of an organic material, and the concave part penetrates, between the first wirings, from the first insulating layer to the first wirings in a laminated direction; and a second insulating layer provided in the concave part and on the laminated structure. | 10-02-2014 |
20140291688 | ACTIVE MATRIX SOLID STATE LIGHT DISPLAY - An exemplary active matrix solid state light display includes a substrate, a plurality of solid state lighting elements and a plurality of thin film transistors. A buffer layer is formed on the substrate. The solid state lighting elements are formed on the buffer layer, and the thin film transistors are formed on the substrate. The thin film transistor is located at a lateral side of the solid state lighting element. The solid state lighting element is a light emitting diode. The thin film transistor electrically connects with the solid state lighting element by a way of a source electrode or a drain electrode connecting with the solid state lighting element. | 10-02-2014 |
20140299884 | Flexible Display With Bent Edge Regions - An electronic device may have a flexible display with portions that are bent along a bend axis. The display may have display circuitry such as an array of display pixels in an active area. Contact pads may be formed in an inactive area of the display. Signal lines may couple the display pixels to the contact pads. The signal lines may overlap the bend axis in the inactive area of the display. During fabrication, an etch stop may be formed on the display that overlaps the bend axis. The etch stop may prevent over etching of dielectric such as a buffer layer on a polymer flexible display substrate. A layer of polymer that serves as a neutral stress plane adjustment layer may be formed over the signal lines in the inactive area of the display. Upon bending, the neutral stress plane adjustment layer helps prevent stress in the signal lines. | 10-09-2014 |
20140306227 | DISPLAY APPARATUS, ARRAY SUBSTRATE, AND METHOD FOR PRODUCING THE ARRAY SUBSTRATE - A display apparatus, an array substrate, and a method for producing the array substrate are provides to so as to effectively reduce a horizontal distance occupied by the ESD assembly at each side of the display region of the substrate and achieve a good performance of the narrow edge frame of the TFT-LCD. The array substrate comprises a pixel region and a periphery wiring region, wherein an Electro-Static Discharge (ESD) assembly and a short-circuit ring are disposed in the periphery wiring region, and wherein the ESD assembly comprises a plurality of Thin Film Transistors (TFTs) each having a source electrode and a drain electrode that are disposed within the short-circuit ring. | 10-16-2014 |
20140306228 | LIGHT EMITTING DEVICE - It is an object of the present invention to prevent an insulating film from peeling in a section where the insulating film is adjacent to a sealing region. Over a first substrate | 10-16-2014 |
20140306229 | DISPLAY PANEL AND METHOD FOR PRODUCING DISPLAY PANEL - A display panel includes: a substrate; a bottom-gate thin-film transistor above the substrate and including a gate electrode, a first electrode, and a second electrode ; an insulating layer above the thin-film transistor and including a contact hole penetrating the insulating layer in a thickness direction of the insulating layer; a pixel electrode above the insulating layer and electrically connected to the second electrode via the contact hole; and a height adjusting layer selectively located below the contact hole to allow the contact hole to have a bottom at a raised level. | 10-16-2014 |
20140312351 | TFT SUBSTRATE AND METHOD FOR CORRECTING WIRING FAULT ON TFT SUBSTRATE - A TFT substrate is provided in which a wire defect can be easily solved. A method of solving a wire defect in the TFT substrate is also provided. In an embodiment, the TFT substrate is configured so that (i) a plurality of gate lines and a plurality of source lines are arranged in a matrix manner, (ii) a TFT is provided in at least one of intersection regions where the plurality of gate lines and the plurality of source lines intersect with each other, and (iii) the at least one of intersection regions is divided by a slit, which is formed in a corresponding one of the plurality of gate lines, so that the at least intersection region is divided into parts arranged along a longitudinal direction of the plurality of source lines. | 10-23-2014 |
20140312352 | SEMICONDUCTOR DEVICE, ELECTRO-OPTICAL DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING ELECTRO-OPTICAL DEVICE, AND ELECTRONIC APPARATUS - A lower insulation layer includes a concave portion that has a back surface on a first base member side, first to third surfaces which are opposed to the back surface, a fourth surface which is arranged between the first surface and the third surface, and a fifth surface which is arranged between the second surface and the third surface. A semiconductor layer is arranged on the first surface and the second surface. A gate electrode is arranged so as to be opposed to the semiconductor layer on at least the third surface, the fourth surface, and the fifth surface via a gate insulation layer. | 10-23-2014 |
20140312353 | THIN FILM TRANSISTOR ARRAY PANEL - A thin film transistor array panel includes a gate line and the driver connection line formed with the same layer material, a data line and a driving pad formed with the same layer material, a first field generating electrode and a connecting member formed with the same layer material, and a second field generating electrode and a dummy electrode layer formed with the same layer material. | 10-23-2014 |
20140312354 | ACTIVE MATRIX SUBSTRATE - The lateral electric field liquid crystal display device ( | 10-23-2014 |
20140319530 | ARRAY SUBSTRATE FOR LIQUID CRYSTAL DISPLAY DEVICE - An array substrate for a liquid crystal display device, comprises: a substrate having a display region and a non-display region; a gate line and first and second data lines on the substrate; first and second thin film transistors in the first and second pixel regions, respectively, the first thin film transistor connected to the gate line and the first data line, the second thin film transistor connected to the gate line and the second data line; a planarization layer on the first and second thin film transistors, the planarization layer having a drain contact hole exposing both of drain electrodes of the first and second thin film transistors; and a pixel electrode and a common electrode over the planarization layer. | 10-30-2014 |
20140319531 | Display Device and Method for Fabricating the Same - An inexpensive display device, as well as an electrical apparatus employing the same, can be provided. In the display device in which a pixel section and a driver circuit are included on one and the same insulating surface, the driver circuit includes a decoder | 10-30-2014 |
20140327008 | Pulse Output Circuit, Shift Register and Display Device - A pulse is inputted to TFTs | 11-06-2014 |
20140327009 | DISPLAY AND METHOD FOR MANUFACTURING DISPLAY - A display includes a pixel array part with pixels that each have at least one transistor whose conduction state is controlled by a drive signal input to a control terminal, and a scanner including a plurality of buffers that are formed of transistors. The buffers correspond to a pixel arrangement and output a drive signal to the control terminals of the transistors of the pixels. The transistors of the pixels and the transistors of the buffers are formed through irradiation with laser light that is moved for scanning in a predetermined direction and has a predetermined wavelength. The transistors in the buffers are formed in such a way that the channel length direction of the transistors is set parallel to the scan direction of the laser light. | 11-06-2014 |
20140332817 | Thin Film Transistor, Thin Film Transistor Array Substrate, and Method for Making the Same - The present invention provides a thin film transistor including a first drain electrode, a second drain electrode, a first source electrode, and a second source electrode, wherein the first drain electrode and the first source electrode jointly define a first U-shaped channel facing toward a first direction. Wherein the second drain electrode and the second source electrode jointly define a second U-shaped channel facing a second direction which is different to the first direction, wherein the bottom width of the second U-shaped channel is larger then the bottom width of the first U-shaped channel. The present invention further provides an array substrate of the thin film transistor, and a method for making the array substrate. By way of the forgoing, short-circuit between the source electrode and the drain electrode resulted from the cleaning agent residue located in the bottom of the U-shaped channel of the thin film transistor can be avoided. | 11-13-2014 |
20140332818 | LOW TEMPERATURE POLYSILICON FILM, THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF AND DISPLAY PANEL - A low temperature polysilicon film and a manufacturing method thereof, a thin film transistor and a manufacturing method thereof and a display panel are provided. The manufacturing method of the low temperature polysilicon film includes crystallizing a nano-silicon thin film to form the low temperature polysilicon film. | 11-13-2014 |
20140332819 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a method for manufacturing a highly reliable display device at a low cost with high yield. According to the present invention, a step due to an opening in a contact is covered with an insulating layer to reduce the step, and is processed into a gentle shape. A wiring or the like is formed to be in contact with the insulating layer and thus the coverage of the wiring or the like is enhanced. In addition, deterioration of a light-emitting element due to contaminants such as water can be prevented by sealing a layer including an organic material that has water permeability in a display device with a sealing material. Since the sealing material is formed in a portion of a driver circuit region in the display device, the frame margin of the display device can be narrowed. | 11-13-2014 |
20140339563 | PIXEL STRUCTURE, DISPLAY PANEL AND METHOD FOR FABRICATING PIXEL STRUCTURE - A pixel structure disposed on a substrate is provided. The pixel structure includes a gate electrode, a first gate insulation layer, a pixel electrode, a second gate insulation layer, a channel layer, a source electrode, a drain electrode and a common electrode. The gate electrode is disposed on the substrate and covered by the first gate insulation layer. The pixel electrode is disposed on the first gate insulation layer and covered by the second gate insulation layer. The pixel electrode is located between the first and the second gate insulation layers. The second gate insulation layer has a first contact opening exposing a portion of the pixel electrode. The channel layer is disposed on the second gate insulation layer. The drain electrode electrically connected to the pixel electrode. The source electrode is disposed on the second gate insulation layer. The common electrode is disposed on the second gate insulation layer. | 11-20-2014 |
20140339564 | PEELING METHOD AND METHOD FOR MANUFACTURING DISPLAY DEVICE USING THE PEELING METHOD - The present invention provides a simplifying method for a peeling process as well as peeling and transcribing to a large-size substrate uniformly. A feature of the present invention is to peel a first adhesive and to cure a second adhesive at the same time in a peeling process, thereby to simplify a manufacturing process. In addition, the present invention is to devise the timing of transcribing a peel-off layer in which up to an electrode of a semiconductor are formed to a predetermined substrate. In particular, a feature is that peeling is performed by using a pressure difference in the case that peeling is performed with a state in which plural semiconductor elements are formed on a large-size substrate. | 11-20-2014 |
20140346521 | DISPLAY DEVICE AND ELECTRONIC DEVICE - A display device includes a circuit layer including: a plurality of transistors; a plurality of metal layers; and a plurality of wirings. The display device includes a display layer including first, second and third light emitting elements. The first light emitting element includes a first anode electrode and a first light emitting layer, a surface of the first anode electrode having a first surface contour structure; the second light emitting element includes a second anode electrode and a second light emitting layer, a surface of the second anode electrode having a second surface contour structure which is different from the first surface contour structure; and the third light emitting element includes a third anode electrode and a third light emitting layer, a surface of the third anode electrode having a third surface contour structure which is different from the second surface contour structure. | 11-27-2014 |
20140353668 | ANTI-COLORCAST DISPLAY PANEL - An anti-colorcast display panel is provided, comprising horizontal scanning lines and vertical data lines. It further includes sub-pixels disposed between adjacent scanning lines and adjacent data lines and arranged in a form of array. Every m×n sub-pixels form a pixel unit. Each sub-pixel includes a transistor whose gate is connected to the scanning line, source is connected to the data line, and drain is connected to two capacitors. The connections of the transistors in corresponding sub-pixels in each pixel unit are same. The data line will connect two adjacent sub-pixels in one row respectively when connecting the sources in the pixel unit, while the gates of the two adjacent sub-pixels are connected to the upper and lower scanning line. The extent of colorcast can be suppressed when implementing color mixing with the present invention, thus improving the color-displaying effect of the display panel, especially for the narrow-frame monitor. | 12-04-2014 |
20140353669 | FLAT PANEL DISPLAY APPARATUS AND METHOD FOR MANUFACTURING THE FLAT PANEL DISPLAY APPARATUS - A display apparatus includes an active layer that overlaps a substrate and comprises a channel region. The display apparatus further includes an insulating layer disposed on the substrate and the active layer. The display apparatus further includes a gate electrode disposed on the insulating layer, overlapping the channel region, and comprising a first gate electrode layer and a second gate electrode layer, wherein the first gate electrode layer is formed of a first material and is disposed between the insulating layer and the second electrode layer, and wherein the second gate electrode layer is formed of a second material that is different from the first material. The display apparatus further includes a contact portion disposed on the insulating layer and comprising a first contact layer that is formed of the first material. The display apparatus further includes a pixel electrode that contacts the first contact layer. | 12-04-2014 |
20140353670 | FLEXIBLE DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - Discussed is a flexible display device to reduce a width of a bezel. The flexible display device includes a substrate being formed of a flexible material, a plurality of gate lines and a plurality of data lines crossing each other, a plurality of pads formed in a pad area of a non-display area, a plurality of links formed in a link area of the non-display area, a plurality of insulation films formed over the entire surface of the substrate, and a first bending hole formed in a bending area of the non-display area, the first bending hole passing through at least one of the insulation films disposed under the link, wherein the bending area is bent such that the pads are disposed on the lower surface of the substrate. | 12-04-2014 |
20140353671 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A display device may include a display area for displaying an image. The display device may further include a peripheral area that surrounds the display area. The display device may further include a pixel disposed in the display area. The display device may further include a bus line disposed in the peripheral area and configured to transmit a signal. The display device may further include a connection conductor set electrically connected to the bus line. The display device may further include a branch line electrically connected to the connection conductor set, configured to receive the signal from the bus line, and configured to transmit the signal to the pixel, wherein a portion of the branch line is disposed in the display area. | 12-04-2014 |
20140353672 | ARRAY SUBSTRATE, METHOD FOR FABRICATING THE SAME AND DISPLAY DEVICE - An array substrate, a method for fabricating the same and a display device are disclosed. The array substrate comprises a plurality of gate lines and a plurality of data lines which intersect each other to define a plurality of pixel regions, each of the pixel regions comprises a thin film transistor and further comprises: a base substrate; more than one protrusion disposed apart from each other on the base substrate; a first electrode layer comprising at least one first electrode strip disposed in a gap between adjacent protrusions; a second electrode layer comprising at least one second electrode strip disposed on the protrusions. | 12-04-2014 |
20140367691 | SEMICONDUCTOR SUBSTRATE, THIN FILM TRANSISTOR, SEMICONDUCTOR CIRCUIT, LIQUID CRYSTAL DISPLAY APPARATUS, ELECTROLUMINESCENT APPARATUS, SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD, AND SEMICONDUCTOR SUBSTRATE MANUFACTURING APPARATUS - According to a semiconductor substrate ( | 12-18-2014 |
20140374762 | CIRCUIT INCLUDING FOUR TERMINAL TRANSISTOR - An electrical circuit includes a substrate and a plurality of transistors. The plurality of transistors includes a first electrically conductive material layer positioned on the substrate and a first electrically insulating material layer positioned on the first electrically conductive material layer. A gate includes a second electrically conductive material and a reentrant profile in which a first portion of the gate is sized and positioned to extend beyond a second portion of the gate. A second electrically insulating material layer conforms to the reentrant profile of the gate and in positioned on at least a portion of the first electrically insulating material layer. A semiconductor material ayer conforms to and is in contact with the second electrically insulating material layer. | 12-25-2014 |
20140374763 | TFT-DRIVEN DISPLAY DEVICE - A TFT-driven display device includes an upper substrate and a lower substrate facing each other, multiple TFTs disposed on a side of the lower substrate facing the upper substrate, and a metal layer disposed on a side of the upper substrate facing to the lower substrate. The metal layer includes a portion that does not overlap with the active layer of the TFTs in a light transmission direction, or the metal layer includes portions overlapping with the active layer of the TFTs in the light transmission direction, the overlapping portions have a pattern width less than a pattern width of other portions that do not overlap with the active layer. In the TFT-driven display device, a photo leakage current caused by the light reflected by the metal may be reduced, because no portion of the metal layer is provided in the position opposed to the active layer of the TFTs located on a TFT array substrate. | 12-25-2014 |
20140374764 | THIN FILM TRANSISTOR ARRAY PANEL AND A METHOD FOR MANUFACTURING THE SAME - A thin film transistor array panel includes a substrate; a plurality of gate lines that are formed on the substrate; a plurality of data lines that intersect the gate lines; a plurality of thin film transistors that are connected to the gate lines and the data lines; a plurality of color filters that are formed on upper parts of the gate lines, the data lines, and the thin film. transistors; a common electrode that is formed on the color filters and that includes a transparent conductor; a passivation layer that is formed on an upper part of the common electrode; and a plurality of pixel electrodes that are formed on an upper part of the passivation layer and that are connected to a drain electrode of each of the thin film transistors. | 12-25-2014 |
20150008438 | DISPLAY DEVICE - There is provided a display device comprising a display panel, wherein the display panel comprises pixels, data lines, thin film transistors including first electrodes electrically connected with the data lines, second electrodes disposed to be spaced apart from the first electrodes in a first direction, semiconductor layers overlapping the first electrodes and the second electrodes, and gate electrodes overlapping the semiconductor layers and pads electrically connected with the second electrodes, wherein the thin film transistors includes first thin film transistors and second thin film transistors, which are alternately disposed, the semiconductor layers are divided into first semiconductor layers included in the first thin film transistors and second semiconductor layers included in the second thin film transistors, which are alternately disposed, and a length of the first semiconductor layer in the first direction is larger than a length of the second semiconductor layer in the first direction. | 01-08-2015 |
20150008439 | LIGHT EMITTING APPARATUS AND METHOD FOR MANUFACTURING THE SAME - The light-emitting apparatus comprising thin film transistors and light emitting elements, comprises; a second inorganic insulation layer on a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, an anode on the third inorganic insulation layer, a second organic insulation layer overlapping with the end of the anode and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer on the upper and side surfaces of the second organic insulation layer and having an opening over the anode, an organic compound layer in contact with the anode and the fourth inorganic insulation layer and containing light-emitting material, and a cathode in contact with the organic compound layer, wherein the third and the fourth inorganic insulation layers comprise silicon nitride or aluminum nitride. | 01-08-2015 |
20150008440 | Semiconductor Device and Method of Manufacturing the Same - An object of the present invention is to provide a semiconductor device having high operation characteristic and reliability. The measures taken are: A pixel capacitor is formed between an electrode comprising anodic capable material over an organic resin film, an anodic oxide film of the electrode and a pixel electrode above. Since the anodic oxide film is anodically oxidized by applied voltage per unit time at 15V/min, there is no wrap around on the electrode, and film peeling can be prevented. | 01-08-2015 |
20150014692 | Array Substrate, Manufacturing Method Thereof, And Display Device - Embodiments of the present invention provide an array substrate, a manufacturing method thereof, and a display device. The array substrate comprises: a pixel region, a data-line pad region and a gate-line pad region; the pixel region comprises: a pixel electrode, a gate electrode of a TFT, source and drain electrodes of the TFT, a connection electrode, and a common electrode; the data-line pad region comprises: an insulating layer, a semiconductor layer, a data line, and a data-line connection pad; the data line and the source and drain electrodes are of a same layer and a same material; and the gate-line pad region comprises: a gate line, an insulating layer, and a gate-line connection pad; the gate line and the gate electrode are of a same layer and a same material; and the gate-line connection pad and the source and drain electrodes are of a same layer and a same material. The array substrate can reduce the number of masks and exposure times, thereby reducing manufacturing costs and improving production efficiency. | 01-15-2015 |
20150014693 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A display substrate is provided. The display substrate includes a switching element disposed on a base substrate, wherein the switching element comprises a gate electrode, an active pattern, a source electrode, and a drain electrode. The display substrate also includes a first electrode disposed on a same layer as the gate electrode, wherein the first electrode includes a wire grid pattern; and a second electrode overlapping the first electrode. | 01-15-2015 |
20150014694 | Pixel Structure, Array Substrate and Display Device - A pixel structure, an array substrate and a display device are provided. The invention relates to the field of liquid crystal display technology, and can solve the problem of large shadow zones formed between slit electrodes in the existing pixel structure. The pixel structure of the invention comprises a slit electrode and a plate electrode. The slit electrode includes at least two layers, each of which includes a plurality of strip-shaped electrode sections and a plurality of slits located between the adjacent electrode sections, the electrode sections in an upper layer are positioned over the slits in a lower layer, projections of the electrode sections in the layers on a substrate are not overlapped with each other, and the layers are separated from each other by a first insulation layer. The plate electrode is provided under the slit electrode and separated from the slit electrode by a second insulation layer. | 01-15-2015 |
20150021611 | ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - An array substrate of an LCD includes a substrate, a first wiring layer, a semiconductor film, an insulating layer, a second wiring layer, a passivation layer, a conductive film, and a spacer. The first wiring layer is patterned to a gate line, a gate electrode, and a first laminating layer. The semiconductor film is patterned to a channel layer and a second laminating layer. The second wiring layer is patterned to a source line, a source electrode, a drain electrode, and a third laminating layer. The conductive film is patterned to a pixel electrode and a fourth laminating layer. The spacer is a laminating structure at least includes the first, second, third, fourth laminating layers. A portion of insulating layer overlaps with the first laminating layer, and a portion of passivation layer overlaps with the third laminating layer. | 01-22-2015 |
20150021612 | ARRAY SUBSTRATE, DISPLAY DEVICE AND MANUFACTURING METHOD OF ARRAY SUBSTRATE - An array substrate, a display device and a method of producing the array substrate are provided, and the array substrate includes a substrate and a thin film field effect transistor and a data line formed on the substrate, and the thin film field effect transistor includes a gate electrode, an active layer, a source electrode and a drain electrode, a gate insulating layer is formed between the gate electrode and the active layer, and the array substrate includes: a protection layer formed between the gate insulating layer and the data line and being in direct contact with the data line; and the protection layer is provided on the same layer with and has the same material with the active layer. | 01-22-2015 |
20150021613 | PHOTOSENSOR - For a photosensor, an array substrate is provided, wherein the edge of a photodiode is enclosed by the opening edge of a contact hole formed on a drain electrode. | 01-22-2015 |
20150028340 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - Source wires having a semiconductor film thereunder are formed wide within a range that does not overlap pixel electrodes formed later. Thereafter, a resist pattern for use in patterning the pixel electrodes is formed so as to overlap edge portions of the source wires, and etching using the resist pattern as a mask is performed, whereby the pixel electrodes are formed, and in addition, the edge portions of the source wires are removed, whereby a structure in which the semiconductor film has a portion projecting beyond the source wires on both sides is formed. | 01-29-2015 |
20150028341 | Array Substrate, Display Device, and Method for Manufacturing the Array Substrate - An array substrate includes a substrate and data lines and scan lines arranged on the substrate, The data lines and the scan lines define plural pixel regions. A thin film transistor is arranged in each pixel region and includes a gate electrode, a source electrode, a drain electrode, and an active region. The gate electrode is arranged above the active region. The source electrode and the drain electrode are arranged at two opposite sides of the active region respectively. A light shielding metal layer is further arranged in each pixel region. The light shielding metal layer and the data lines are arranged in the same layer on the substrate. The light shielding metal layer is arranged under the active region and at least partially overlaps with the active region. The data line is close to the source electrode and does not overlap with the active region at least partially. | 01-29-2015 |
20150028342 | ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE - An array substrate, a manufacturing method thereof and a display device are provided, and the array substrate comprises: a substrate ( | 01-29-2015 |
20150028343 | DISPLAY PANEL, METHOD FOR FABRICATING THE SAME AND DISPLAY DEVICE - A display panel is discloses. A gate line and a gate connection line of an array substrate are disposed perpendicular to each other. A passivation layer is formed on a side of a source electrode or a drain electrode of the array substrate which is close to the color filter substrate. A first via hole is disposed in the passivation layer. A color filter substrate includes a first substrate, and a data line parallel to the gate connection line is formed on a side of the first substrate which is close to the array substrate. A protection layer, a black matrix and a common electrode are sequentially formed on a side of the data line which is close to the array substrate. A second via hole is disposed in a region of the protection layer, the black matrix and the common electrode which corresponds to the data line. A first end of a conductive spacer is connected to the source electrode or the drain electrode by way of the first via hole, a second end of the conductive spacer is connected to the data line by way of the second via hole. A method for fabricating a display panel and a display device are further disclosed. | 01-29-2015 |
20150028344 | SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND ELECTRONIC DEVICE - A pixel includes a load, a transistor which controls a current supplied to the load, a storage capacitor, and first to fourth switches. By inputting a potential in accordance with a video signal into the pixel after the threshold voltage of the transistor is held in the storage capacitor, and holding a voltage of the sum of the threshold voltage and the potential, variations of a current value caused by variations of threshold voltage of a transistor can be suppressed. Consequently, a predetermined current can be supplied to the load such as a light-emitting element. Further, by changing the potential of a power supply line, a display device with a high duty ratio can be provided. | 01-29-2015 |
20150034955 | THIN FILM TRANSISTOR ARRAY SUBSTRATE - A pixel electrode is connected to a drain electrode of TFT via a first aperture formed on a second interlayer insulating film, a second aperture, which includes a bottom portion of the first aperture and is formed on a common electrode, and a third aperture, which is included in the bottom portion of the first aperture and is formed on a first interlayer insulating film and a third interlayer insulating film. The common electrode is connected to a common wiring via a fourth aperture formed on the second interlayer insulating film, and a fifth aperture that is included in a bottom portion of the fourth aperture and is formed on the first interlayer insulating film, and a contact electrode that is formed in the fourth aperture and the fifth aperture. | 02-05-2015 |
20150034956 | ARRAY SUBSTRATE FOR LIQUID CRYSTAL DISPLAY AND MANUFACTURING METHOD THEREOF - An array substrate for a liquid crystal display (LCD) and manufacturing method thereof are provided. The array substrate for a liquid crystal display (LCD) includes: a substrate, including: a gate electrode, a pixel electrode, and a common electrode, a gate pad formed on the substrate, and connected to the gate electrode, a gate insulating layer formed on the gate pad, a first protective layer formed on the gate insulating layer, a second protective layer formed on the first protective layer, a first metal layer formed on the second protective layer, and connected to the gate pad through a first contact hole which exposes the gate pad, a third protective layer formed on the first metal layer and the second protective layer, and a second metal layer formed on the third protective layer, and connected to the first metal layer through a second contact hole which exposes the first metal layer. | 02-05-2015 |
20150041818 | DISPLAY APPARATUS AND MANUFACTURING METHOD OF THE SAME - Provided are a display apparatus and a manufacturing method of the same. The display apparatus includes: a counter substrate, and an active matrix substrate including a pixel area. The active matrix substrate includes, in a non-transmissive region of each pixel, a transparent substrate, a polycrystalline silicon film, a gate insulating film, a gate electrode, an interlayer insulating film, and a drain layer including patterned conductive films, and includes, in a transparent region of each pixel, the transparent substrate, the gate insulating film and the interlayer insulating film. The interlayer insulating film includes zones where the interlayer insulating film is thinner than a part of the interlayer insulating film at the middle of each transmissive region. The zones are each located so as to extend between the neighboring patterned conductive films and are further located so as not to overlap with the transmissive regions and regions laid over LDD portions of the polycrystalline silicon film. | 02-12-2015 |
20150048377 | SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD FOR SAME - A semiconductor device of the present invention includes an n-channel first thin film transistor and a p-channel second thin film transistor on one and the same substrate. The first thin film transistor has a first semiconductor layer ( | 02-19-2015 |
20150053987 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - Exemplary embodiments of the present disclosure provide a thin film transistor array panel including a first insulating substrate; a gate line and a data line disposed on the first insulating substrate, intersecting with each other, and being insulated from each other; a first passivation layer disposed on the gate line and the data line and comprising a plurality of first openings; a first electrode disposed on the first passivation layer; and a second electrode disposed in the first opening, thereby simplifying a manufacturing process of the thin film transistor array panel. | 02-26-2015 |
20150053988 | ARRAY SUBSTRATE, METHOD FOR MANUFACTURING THE SAME AND DISPLAY DEVICE - The present invention provides an array substrate, a method for manufacturing the same and a display device, and relates to technical field of displays. The method for manufacturing an array substrate comprises forming a metal layer on a substrate and removing superficial metallic oxide on the metal layer by a washing process. The method for manufacturing an array substrate according to the present inversion can remove the superficial metal oxide on the metal layer and improve the performance of a TFT. | 02-26-2015 |
20150053989 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE DISPLAY SUBSTRATE - A display substrate includes a base substrate, a common line on the base substrate, a first insulation layer covering the common line and having a first insulating material, a conductive pattern on the first insulation layer and including a source electrode and a drain electrode, a second insulation layer covering the drain electrode and the common line, and including a lower second insulation layer having a second insulating material and an upper second insulation layer having the first insulating material, a first electrode electrically connected to the drain electrode through a first contact hole in the second insulation layer, and a second electrode electrically connected to the common line through a second contact hole in the first and second insulation layers. The upper and lower second insulation layers on the drain electrode have a first hole and a second hole respectively that form the first contact hole. | 02-26-2015 |
20150060866 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - A thin film transistor array panel includes a first insulation substrate, a gate line and a data line which are positioned on the first insulation substrate, are insulated from each other, and cross each other, a thin film transistor connected to the gate line and the data line, an organic film positioned on the thin film transistor, a second passivation layer which is positioned on the organic film and defines a plurality of second openings therein, a common electrode positioned on the second passivation layer, and a pixel electrode positioned in the plurality of second openings, where a thickness of the common electrode is larger than a thickness of the pixel electrode. | 03-05-2015 |
20150060867 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A display device including a substrate including a display area and a non-display area, wherein the non-display area comprises a gate metal line positioned on the substrate, a gate insulating layer insulating the gate metal layer, a data metal line positioned on the gate insulating layer, and two or more protective layers positioned in a region in which the gate metal line and the data metal line overlap above the data metal line. | 03-05-2015 |
20150060868 | ARRAY SUBSTRATE, METHOD FOR MANUFACTURING THE SAME AND DISPLAY DEVICE - The present disclosure discloses an array substrate including a display area and a data lead area. The display area includes data signal lines and gate lines. The data lead area includes peripheral wirings connecting the data signal lines and wiring terminals. The peripheral wirings include a plurality of metal traces which are corresponding to the data signal lines in a one-to-one manner and manufactured from a same layer as the gate lines. Each of the metal traces is connected to one of the data signal lines which is corresponding to the each of the metal trace. | 03-05-2015 |
20150060869 | SUPPORTING SUBSTRATE FOR MANUFACTURING FLEXIBLE INFORMAITON DISPLAY DEVICE USING TEMPORARY BONDING/DEBONDING LAYER, MANUFACTURING METHOD THEREOF, AND FLEXIBLE INFORMATION DISPLAY DEVICE - Disclosed are a supporting substrate for manufacturing a flexible information display device using a temporary bonding/debonding layer, a manufacturing method thereof, and a flexible information display device. A supporting substrate for manufacturing a flexible information display device, the supporting substrate comprising: a temporary bonding/debonding layer having a thickness in a range of 0.1 nm to 1000 nm and comprising an adhesive material bonded to the supporting substrate through Van der Waals bonding force. Provided is a method capable of economically manufacturing the display device having a high resolution while reviewing a cost competitive force by reducing a device investment cost and improving the yield rate in the flexible flat panel information display device. | 03-05-2015 |
20150060870 | SUPPORTING SUBSTRATE FOR MANUFACTURING FLEXIBLE INFORMATION DISPLAY DEVICE, MANUFACTURING METHOD THEREOF, AND FLEXIBLE INFORMATION DISPLAY DEVICE - Disclosed are a supporting substrate for manufacturing a flexible information display device capable of easily separating the flexible information display device from the supporting substrate without deforming or damaging the flexible information display device, a manufacturing method thereof, and a flexible information display device manufactured thereby. The supporting substrate for manufacturing a flexible information display device includes: a coating layer formed therein with a plurality micro-protrusions formed on the supporting substrate; and a temporary bonding/debonding layer formed on the coating layer and including an adhesive material mechanically interlocked with and bonded to the supporting substrate through Van der Waals bonding force. The method provides a method capable of economically manufacturing the display device having a high resolution while reviewing a cost competitive force by reducing a device investment cost and improving the yield rate in the flexible flat panel information display device. | 03-05-2015 |
20150060871 | THIN FILM TRANSISTOR, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME - A semiconductor element is operated without being affected even when the substrate is largely affected by heat shrink such as a large substrate. Furthermore, a thin film semiconductor circuit and a thin film semiconductor device each having the semiconductor element. Also, a semiconductor element is operated without being affected even if there is slight mask deviation. In view of them, a plurality of gate electrodes formed so as to overlap a lower concentration impurity region of a semiconductor layer than drain regions on a drain region side. Also, source regions and the drain regions corresponding to the respective gate electrodes are formed so that current flows in opposite directions each other through channel regions corresponding to the gate electrodes. Further, the number of the channel regions in which a current flows in a first direction is equal to the number of the channel regions in which a current flows in a direction opposite to the first direction. | 03-05-2015 |
20150069401 | THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR SUBSTRATE - A thin film transistor substrate includes a base substrate, an active pattern provided on the base substrate and including a source electrode, a drain electrode and a channel between the source electrode and the drain electrode, a gate insulation layer provided on the active pattern, a gate electrode which is provided on the active pattern and overlaps the channel, a first contact pad disposed on at least one of the source electrode and the drain electrode and including a first metal, and a first non-conductive metal oxide layer on the base substrate to cover the gate electrode and including the first metal. | 03-12-2015 |
20150069402 | TFT ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE - A method of manufacturing a TFT array substrate and a TFT array substrate and a display device are provided. During a pattern of a gate layer ( | 03-12-2015 |
20150069403 | FLEXIBLE SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE - A flexible semiconductor device includes a wire embedded layer that has flexibility and has a first principal surface and a second principal surface, a thick wire embedded in the wire embedded layer so as to be substantially flush with the first principal surface of the wire embedded layer, and a thin film transistor element electrically connected to the thick wire. The thin film transistor element is disposed on the first principal surface of the wire embedded layer. The flexible semiconductor device is suitable for increasing the area and can be manufactured with a high productivity. A display device including the flexible semiconductor device and a method for manufacturing the flexible semiconductor device are also disclosed. | 03-12-2015 |
20150076501 | THIN FILM TRANSISTOR ARRAY SUBSTRATE - A pixel electrode of an array substrate is connected with a drain electrode of a TFT via a first aperture formed on a second interlayer insulating film, a second aperture that includes a bottom portion of the first aperture and is formed on a common electrode, a third aperture that includes at least a part of the bottom portion of the first aperture, is included in a second aperture and is formed on a third interlayer insulating film, and a fourth aperture that is formed on the first interlayer insulating film in a region where the third aperture overlaps with the bottom portion of the first aperture. | 03-19-2015 |
20150076502 | METHOD OF PRODUCING DISPLAY DEVICE, DISPLAY DEVICE, METHOD OF PRODUCING THIN-FILM TRANSISTOR SUBSTRATE, AND THIN FILM TRANSISTOR SUBSTRATE - A method of producing a display device includes the steps of forming gate electrodes on a substrate so that an arrangement of a source and a drain, in a pixel row direction, of a thin-film transistor formed in each of pixels on the substrate is reversed every pixel row; forming a gate insulating film and an amorphous semiconductor thin film on the substrate in that order so as to cover the gate electrodes; crystallizing the semiconductor thin film by irradiating the semiconductor thin film with an energy beam so that a scanning direction of the energy beam is the same with respect to the arrangement of the source and the drain in the pixel row direction; and forming a light-emitting element connected to the thin-film transistor. | 03-19-2015 |
20150076503 | LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A light emitting device of the invention includes a thin film transistor, an insulating layer covering the thin film transistor, an electrode which is electrically connected to the thin film transistor through a contact hole formed on the insulating layer, and a light emitting element formed by interposing a light emitting layer between a first electrode which is electrically connected to the electrode and a second electrode. The light emitting device further includes a layer formed of a different material from that of the insulating layer only between the electrode and the first electrode over the insulating layer and the insulating layer. | 03-19-2015 |
20150084054 | PIXEL STRUCTURE OF INORGANIC LIGHT EMITTING DIODE - This disclosure provides a pixel structure of inorganic light emitting diode. A first power line is disposed between two adjacent first sub-pixel and second sub-pixel, and the first sub-pixel and second sub-pixel are electrically connected to the same first power line. Also, a first reference line is disposed on an opposite side of the first sub-pixel away from the second sub-pixel, and a second reference line is disposed on an opposite side of the second sub-pixel away from the first sub-pixel. The first sub-pixel and the second sub-pixel have substantially the same length. | 03-26-2015 |
20150084055 | DISPLAY DEVICE - A display device includes a first substrate having a first step part formed in a frame area on a periphery of a display area, a second substrate arranged facing the first substrate, and a filler material filled between the first substrate in one part of the display area and the frame area, and the second substrate, a periphery edge part being located in a range from the first step part to an end part of the first substrate and the second substrate. | 03-26-2015 |
20150084056 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME - The present disclosure discloses a method for manufacturing a TFT array substrate, comprising: depositing a gate metal layer, a gate insulating layer, a semiconductor layer and a source-drain electrode layer in this order on a base substrate, performing a first photolithograph process to form a common electrode line, a gate line, a gate electrode, a source electrode, a drain electrode and a channel defined between the source electrode and the drain electrode; depositing a passivation layer, performing a second photolithograph process to form a first via hole and a second via hole in the passivation layer; and depositing a pixel electrode layer and a data line layer in this order, perform a third photolithograph process to form a data line connected to the source electrode through the first via hole and a pixel electrode connected to the drain electrode through the second via hole. | 03-26-2015 |
20150091011 | DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME - A display device and a method for fabricating a display device are provided. According to one embodiment of the present invention, a display device includes a substrate, an insulating layer arranged on the substrate, a wiring pattern arranged on the insulating layer, an organic layer arranged on the wiring pattern, and a contact hole penetrating the organic layer to expose at least a portion of the wiring pattern. The side wall of the organic layer that defines the contact hole includes a first side wall portion and a second side wall portion, and a value obtained by dividing a vertical distance of the first side wall portion by a horizontal distance of the first side wall portion is different from a value obtained by dividing a vertical distance of the second side wall portion by a horizontal distance of the second side wall portion. | 04-02-2015 |
20150091012 | DISPLAY APPARATUS - A display apparatus includes: a flexible display panel including: a base substrate including a display area and a non-display area; a pixel at the display area of the base substrate; and signal lines at the non-display area of the base substrate; and a protective film coupled to the flexible display panel and including: a first portion under the flexible display panel; and a second portion extending from the first portion and configured to be bent to overlap with the signal lines and to overlap with the first portion, wherein the display apparatus is configured to be bent along a folding line crossing an area of the display apparatus in which the first portion and the second portion are configured to be overlapped with each other. | 04-02-2015 |
20150091013 | DISPLAY PANEL AND DISPLAY DEVICE HAVING THE SAME - A display panel includes a base substrate including a display area and a peripheral area, a pixel at the display area of the base substrate, a signal line coupled to the pixel and configured to apply a signal to the pixel, and a pad part including a plurality of pads at the peripheral area. The pad part being electrically coupled to the signal line, and the plurality of pads includes at least two pads having widths different from each other. | 04-02-2015 |
20150091014 | Display Device and Method of Manufacturing the Same - A display device and a method of manufacturing the same are disclosed, in which a sensing electrode for sensing a touch of a user is built in a display panel, whereby a separate touch screen is not required on an upper surface of the display panel and thus thickness and manufacturing cost are reduced. | 04-02-2015 |
20150091015 | Display Device and Method of Manufacturing the Same - A display device and a method of manufacturing the same are disclosed, in which a sensing electrode for sensing a touch of a user is built in a display panel, whereby a separate touch screen is not required on an upper surface of the display panel unlike the related art and thus thickness and manufacturing cost are reduced. | 04-02-2015 |
20150091016 | Flexible Display - A flexible display has a display layer, a thin-film transistor (TFT) layer and a flexible substrate. The display layer has a plurality of display units. The TFT layer has a plurality of pixel control circuits and a plurality of sensing circuits. The pixel control circuits are configured to control operations of the plurality of display units. Each of the sensing circuits is configured to generate a deformation signal according to deformation of the flexible display. The flexible substrate and the TFT layer are stacked. | 04-02-2015 |
20150091017 | Semiconductor Device and Fabrication Method Thereof - A p channel TFT of a driving circuit has a single drain structure and its n channel TFT, an LDD structure. A pixel TFT has the LDD structure. A pixel electrode disposed in a pixel unit is connected to the pixel TFT through a hole bored in at least a protective insulation film formed of an inorganic insulating material and formed above a gate electrode of the pixel TFT, and in an inter-layer insulation film disposed on the insulation film in close contact therewith. These process steps use 6 to 8 photo-masks. | 04-02-2015 |
20150091018 | SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND ELECTRONIC APPARATUS - To prevent an electrostatic damage on a display device formed with a driving circuit. Protective circuits are provided not only at input terminal parts, but also at intermediate parts of a circuit or at the ends of wiring lines. Otherwise, the protective circuits are provided at the ends of the wiring lines and at the places immediately before and after the input terminals, respectively, and then the circuit is interposed therebetween. Further, the protective circuits are provided around a circuit with a large current consumption. | 04-02-2015 |
20150097190 | TFT ARRAY SUBSTRATE, DISPLAY PANEL AND DISPLAY DEVICE - A TFT array substrate having compensated gate signal delays is disclosed. The TFT array substrate includes a plurality of gate lines, a plurality of data lines insulatedly intersecting with the plurality of the gate lines, and a plurality of TFT switches, each of which is connected with one of the gate lines and one of the data lines. The TFT array substrate also includes a plurality of driving units, where the driving units are located at both ends of the gate lines, and each of the driving units is connected with at least one gate line to drive the TFT switches connected to the at least one gate line. | 04-09-2015 |
20150097191 | PIXEL STRUCTURE - A pixel structure is provided. The pixel structure includes a scan line, a data line, an active device, a covering layer, and a reflective pixel electrode. The active device is electrically connected with the scan line and the data line. The covering layer covers the scan line, the data line, and the active device. The reflective pixel electrode is disposed on the covering layer, and electrically connected with the active device. The reflective pixel electrode includes a first region having a plurality of first protruding structures and a second region having a planar surface. The area occupied by the first region is 50% to 70% of the total area of the reflective pixel electrode, and the area occupied by the second region is 30% to 50% of the total area of the reflective pixel electrode. | 04-09-2015 |
20150097192 | DISPLAY DEVICE - A display device is configured that the common electrode wiring layer is divided in a source wiring layer direction, the metal wiring layer is disposed above the source wiring layer at a position in contact with the upper part of the common electrode wiring layer, and the metal wiring layer is not disposed at a position where the common electrode wiring layer is divided. Alternatively, the metal wiring layer is not disposed at a position between the same colors as those at the division position of the common electrode wiring layer. | 04-09-2015 |
20150102353 | TFT ARRAY SUBSTRATE, DISPLAY PANEL AND DISPLAY DEVICE - A TFT array substrate is disclosed. The TFT array substrate includes a substrate, a data line disposed above the substrate, and a gate insulating layer disposed above the substrate, where the gate insulating layer includes a groove. The TFT array substrate also includes a data line disposed within the groove of the gate insulating layer. | 04-16-2015 |
20150102354 | ANTISTATIC STRUCTURE OF ARRAY SUBSTRATE - The present invention provides an antistatic structure of an array substrate, which includes: an effective zone ( | 04-16-2015 |
20150102355 | DISPLAY SUBSTRATES AND METHODS OF MANUFACTURING DISPLAY SUBSTRATES - A display substrate and a method of manufacturing a display substrate are disclosed. The display substrate includes an active pattern, a first gate electrode and a second gate electrode. The active pattern is disposed on a base substrate. The first gate electrode overlaps the active pattern. The first gate electrode is spaced apart from the active pattern by a first distance. The second gate electrode overlaps the active pattern. The second gate electrode is spaced apart from the active pattern by a second distance which is larger than the first distance. | 04-16-2015 |
20150102356 | LIQUID CRYSTAL DEVICE AND MANUFACTURING METHOD FOR SAME - Display device, including: substrates, color filters having first and second color filters, drain and gate signal lines (of light blocking material), wherein, an overlapping portion adjacent the first and second color filter overlap, is formed on a region with one of the drain or gate signal lines, a first color filter edge is a first taper and a second color filter edge is a second taper, in the overlapping portion, the first taper is closer to the drain or gate signal line than the second taper in the overlapping portion, the first taper angle is 45° or more and 90° or less corresponding to a surface of the drain or gate signal line, the second taper angle is 45° or more and 90° or less corresponding to a surface of the first taper and, the first taper angle is larger than the second taper angle. | 04-16-2015 |
20150108486 | PIXEL ELECTRODE, ARRAY SUBSTRATE AND DISPLAY DEVICE - A pixel electrode, an array substrate and a display device are configured to provide a display apparatus with higher transmittance. The pixel electrode includes at least one electrode unit, wherein the electrode unit includes a plurality of strip electrodes and has a non-closed shape. | 04-23-2015 |
20150108487 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A means of forming unevenness for preventing specular reflection of a pixel electrode, without increasing the number of process steps, is provided. In a method of manufacturing a reflecting type liquid crystal display device, the formation of unevenness (having a radius of curvature r in a convex portion) in the surface of a pixel electrode is performed by the same photomask as that used for forming a channel etch type TFT, in which the convex portion is formed in order to provide unevenness to the surface of the pixel electrode and give light scattering characteristics. | 04-23-2015 |
20150108488 | DISPLAY DEVICE - According to one embodiment, a display device includes an underlying insulation layer formed on a surface of a resin layer, and a thin-film transistor formed above the surface of the resin layer via the underlying insulation layer. The underlying insulation layer includes a three-layer multilayer structure of a first silicon oxide film, a silicon nitride film formed above the first silicon oxide film, and a second silicon oxide film formed above the silicon nitride film. | 04-23-2015 |
20150108489 | CONTACT PORTION OF WIRE AND MANUFACTURING METHOD THEREOF - A contact portion of wiring and a method of manufacturing the same are disclosed. A contact portion of wiring according to an embodiment includes: a substrate; a conductive layer disposed on the substrate; an interlayer insulating layer disposed on the conductive layer and having a contact hole; a metal layer disposed on the conductive layer and filling the contact hole; and a transparent electrode disposed on the interlayer insulating layer and connected to the metal layer, wherein the interlayer insulating layer includes a lower insulating layer and an upper insulating layer disposed on the lower insulating layer, the lower insulating layer is undercut at the contact hole, and the metal layer fills in the portion where the lower insulating layer is undercut. | 04-23-2015 |
20150115271 | DISPLAY DEVICE INCLUDING ELECTROSTATIC DISCHARGE CIRCUIT - The present invention relates to a display device including a static electricity discharge circuit. The display device according to an exemplary embodiment of the present invention includes: a thin film transistor array panel including a display area including a plurality of pixels and a peripheral area around the display area; a signal wire positioned at the peripheral area; and a static electricity discharge circuit unit positioned at the peripheral area and connected to the signal wire, wherein the static electricity discharge circuit unit includes a first portion and a second portion positioned at a same layer as a portion of the signal wire and facing each other with a separation space therebetween, and a connecting member positioned at a different layer from the first portion and the second portion and electrically connecting the first portion and the second portion. | 04-30-2015 |
20150115272 | ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE - Embodiments of the disclosure provide an array substrate and a manufacturing method thereof, and a display device. The array substrate includes a thin film transistor formed on a base substrate, a plurality of strip pixel electrodes connected to a drain electrode of the thin film transistor, and a common electrode overlapping with and insulating from the plurality of strip pixel electrodes. The drain electrode has an extension portion, the extension portion extends in an arrangement direction of the plurality of strip pixel electrodes, and each of the strip pixel electrodes is connected to the extension portion. | 04-30-2015 |
20150115273 | ARRAY SUBSTRATE, METHOD FOR MANUFACTURING THE SAME AND DISPLAY DEVICE - The present invention provides an array substrate, a method for manufacturing the array substrate and a display device, and belongs to a field of display technology. A gate electrode and a gate line of the array substrate are coated with a metal oxide thin film. By applying the technical scheme of the present invention, diffusion of a metal atom of the gate electrode and the gate line is prevented in the array substrate. | 04-30-2015 |
20150115274 | DISPLAY DEVICE - Provided is a display device ( | 04-30-2015 |
20150115275 | DISPLAY DEVICE - A display device includes gate lines, data lines, first wires and second wires extending in the directions of the gate lines and data lines, and pixels having a first subpixel and a second subpixel each. The first subpixel has a first subpixel electrode and a first switching element, and the second subpixel has a second subpixel electrode and second and third switching elements. The control terminals of the three switching elements are connected to the same gate line, and the input terminals of the first and second switching elements are connected to the same data line. The first and second switching elements have output terminals connected to the first and second subpixel electrodes, respectively. The second switching element's output terminal connects to the third switching element, which has an output terminal connected to a second wire. The first wires and the second wires are connected in a pixel. | 04-30-2015 |
20150123134 | INFRARED DETECTOR, INFRARED DETECTION SENSOR HAVING AN INFRARED DETECTOR AND METHOD OF MANUFACTURING THE SAME - An infrared detector includes a substrate, a light blocking layer on the substrate, a lower electrode on the light blocking layer, the lower electrode electrically connected to the light blocking layer, a lower insulating layer on the light blocking layer, a first semiconductor layer on the lower insulating layer, a first source electrode and a first drain electrode on the first semiconductor layer, an upper insulating layer on the first semiconductor layer, and a first gate electrode on the upper insulating layer, the first gate electrode electrically connected to the lower electrode, where the first semiconductor layer includes a zinc and a nitrogen, and the first semiconductor layer is configured to generate electric charges by reacting with an infrared ray. | 05-07-2015 |
20150123135 | ARRAY SUBSTRATE, METHOD FOR FABRICATING THE SAME AND LIQUID CRYSTAL PANEL - An array substrate, a method for fabricating the same and a liquid crystal panel are disclosed. The array substrate includes a display region and a frame region surrounding the display region. The display region includes a plurality of data lines, a plurality of scan lines and a plurality of scan connection lines. The plurality of data lines and the plurality of scan lines intersect each other to divide the display region into a plurality of pixel regions. The plurality of scan lines are electrically connected to the plurality of scan connection lines in a one-to-one correspondence in the display region. | 05-07-2015 |
20150123136 | Array Substrate For Display Panel And Method For Manufacturing Thereof - Disclosed are an array substrate and a method of fabricating the same. The array substrate includes an active area including a plurality of pixels defined at an intersection area of a gate line and a data line, a gate driving circuit formed at one side of a non-active area and a signal line extending in parallel with the data line in the non-active area to transfer a signal to the gate driving circuit. The signal line includes a first line with a plurality of segmental lines, and at least one additional line formed of a different material and formed at a different layer than the first line. The at least one additional line electrically connects two segmental lines of the first line adjacent to each other. | 05-07-2015 |
20150123137 | FLEXIBLE DISPLAY DEVICE AND CURVED DISPLAY DEVICE - Provided is a configuration for a semiconductor layer and a line for reducing the segment length of the semiconductor layer with respect to the bending direction of the flexible substrate. Such a configuration reduces the probability of cracks occurring in the semiconductor layer of the thin-film transistor, thereby improving the stability and durability of the thin-film transistor employed in a curved or a flexible display device. The configuration includes a thin-film transistor (TF) on the flexible substrate. The TFT includes the semiconductor layer extending obliquely with respect to the direction of the line. | 05-07-2015 |
20150129880 | ACTIVE DEVICE ARRAY SUBSTRATE - An active device array substrate includes a substrate, first signal lines, second signal lines, pixel units, selection units, an insulating layer, and a driving unit. The second signal lines and the selection lines are electrically connected with the driving unit. The insulating layer is disposed among he first signal lines, the second signal lines and the selection lines and has contact holes. The contact holes are disposed corresponding to the first signal lines, and a portion of the selection lines are electrically connected with the first signal lines via the contact holes. The selection line corresponding to the contact hole the farthest from the driving unit and the closest to a reference axis of the substrate and the selection line corresponding to the contact hole the closest to the driving unit and the reference axis respectively receive a start signal and a terminal signal provided by the driving unit. | 05-14-2015 |
20150129881 | PIXEL UNIT AND METHOD OF FABRICATING THE SAME, ARRAY SUBSTRATE AND DISPLAY DEVICE - The present invention provides a pixel unit including a thin film transistor and a pixel electrode, the thin film transistor includes a gate, a source and a drain, and the pixel electrode is electrically connected to the drain through a via hole. An upper end surface of the via hole is connected to the pixel electrode, and a lower end surface of the via hole is connected to the drain. The via hole is a step-shaped hole, and an area of the upper end surface of the via hole is larger than that of the lower end surface of the via hole. The present invention also provides a method of fabricating the pixel unit, an array substrate including the pixel unit, and a display device including the array substrate. | 05-14-2015 |
20150129882 | ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE - The invention relates to an array substrate for a display device and to a method for manufacturing an array substrate comprising a thin-film transistor (“TFT”). An array substrate according to an embodiment of the invention comprises a source electrode, a gate electrode and a drain electrode, wherein the gate electrode is located on a first metal layer, the source electrode and the drain electrode are located on a second metal layer, and in the case that dislocation occurs between the first metal layer and the second metal layer, the area of the overlapping region between the source electrode and the gate electrode keeps constant. | 05-14-2015 |
20150129883 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - It is an object of the present invention to form a pixel electrode and a metal film using one resist mask in manufacturing a stacked structure by forming the metal film over the pixel electrode. A conductive film to be a pixel electrode and a metal film are stacked. A resist pattern having a thick region and a region thinner than the thick region is formed over the metal film using an exposure mask having a semi light-transmitting portion. The pixel electrode, and the metal film formed over part of the pixel electrode to be in contact therewith are formed using the resist pattern. Accordingly, a pixel electrode and a metal film can be formed using one resist mask. | 05-14-2015 |
20150129884 | DISPLAY DEVICE AND TERMINAL DEVICE - To provide a plural-viewpoint display device having an image separating optical element such as a lenticular lens or a parallax barrier, which is capable of arranging thin film transistors and wirings while achieving substantially trapezoid apertures and high numerical aperture, and to provide a driving method thereof, a terminal device, and a display panel. A neighboring pixel pair arranged with a gate line interposed therebetween is connected to the gate line placed between the pixels, each of the pixels configuring the neighboring pixel pair is connected to the data line different from each other, and each of the neighboring pixel pairs neighboring to each other in an extending direction of the gate lines is connected to the gate line different from each other. | 05-14-2015 |
20150129885 | MANUFACTURING METHOD OF THIN FILM AND METAL LINE FOR DISPLAY USING THE SAME, THIN FILM TRANSISTOR ARRAY PANEL, AND METHOD FOR MANUFACTURING THE SAME - A method for forming a thin film according to an exemplary embodiment of the present invention includes forming the thin film at a power density in the range of approximately 1.5 to approximately 3 W/cm | 05-14-2015 |
20150137129 | TFT SUBSTRATE AND METHOD OF REPAIRING THE SAME - A thin film transistor (TFT) substrate includes; a substrate; a plurality of scan lines, disposed on the substrate; a plurality of data lines, disposed across the scan lines; a scan line insulting layer disposed between the scan lines and the data lines; a plurality of thin film transistors, each of thin film transistors disposed on an intersection of each scan line and each data, line; a data line insulting layer, disposed on a top surface of the scan line insulting layer and used to cover the data lines; and a common electrode, disposed on the data line insulting a layer, and comprising a plurality of positioning through holes, wherein the positioning through holes expose the data line insulting layer, and are located right above the data lines. | 05-21-2015 |
20150137130 | TFT ARRAY SUBSTRATE, DISPLAY PANEL AND DISPLAY DEVICE - The present invention discloses a TFT array substrate, comprising: a plurality of scan lines; a plurality of data lines; pixel units located in areas defined by adjacent scan lines and adjacent data lines; wherein each of the pixel units comprises a first electrode and a second electrode stacked and insulated from each other, the first electrode is flat shape, and the second electrode comprises a plurality of strip electrodes extending along a first direction and arranged along a second direction; a first pixel unit and a second pixel unit adjacent to each other form a unit group; the first pixel unit comprises a first part extending along the first direction and a second part extending from an end area of the first part to the second pixel unit; the second pixel unit comprises a third part extending along the first direction and a fourth part extending from an end area of the third part to the first pixel unit; and the second part is staggered with the fourth part. With such design, the color resistance compensation can not be needed, and also the transmittance is increased. | 05-21-2015 |
20150137131 | FLEXIBLE DISPLAY APPARATUS AND A MANUFACTURING METHOD THEREOF - A flexible display apparatus includes: a flexible substrate; a display unit on the flexible substrate; and a thin-film encapsulating layer on the display unit. The thin-film encapsulating layer includes at least one organic layer and at least one inorganic layer. The inorganic layer comprises carbon having a concentration gradient distributed at an interface between the at least one organic layer and the at least one inorganic layer. A manufacturing method of the flexible display apparatus is also disclosed. | 05-21-2015 |
20150137132 | ELECTROLUMINESCENCE DISPLAY DEVICE - Disclosed is an electroluminescence device having a substrate, a thin film transistor over the substrate, an insulating film over the thin film transistor, an electroluminescence element over the insulating film, a passivation film over the electroluminescence element, and a counter substrate over the passivation film. The electroluminescence element is configured to emit light through the counter substrate, and a space between the substrate and the counter substrate is filled with a filler. The electroluminescence device is featured by the tapered side surface of a gate electrode of the thin film transistor. | 05-21-2015 |
20150144950 | THIN FILM TRANSISTOR STRUCTURE HAVING BIG CHANNEL-WIDTH AND TFT SUBSTRATE CIRCUIT - The present invention discloses a thin film transistor (TFT) structure having big channel-width. The TFT structure comprises a gate, a source and a drain. The source and the drain are respectively be a spiral, and are symmetrical and corresponding to each other to form as a double spiral arrangement. By the source and the drain forming as a symmetrical and corresponding double spiral, the TFT of the present invention can increase the channel-width between the source and the drain, so as to increase width/length rate, so that the charge ability of the TFT can be increased. | 05-28-2015 |
20150144951 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - A thin film transistor array panel including: an insulation substrate, a gate line provided on the insulation substrate and including a gate electrode, a gate insulating layer provided on the gate line, a semiconductor layer provided on the gate insulating layer, and a source electrode and a drain electrode provided on the semiconductor layer and separated from each other, and the gate insulating layer includes a fluorinated silicon oxide (SiOF) layer, and the gate electrode, the semiconductor layer, the source electrode, and the drain electrode form a thin film transistor, and a threshold voltage shift value of the thin film transistor is substantially less than 4.9 V. | 05-28-2015 |
20150144952 | DISPLAY SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE INCLUDING THE SAME - A display substrate, method of manufacturing the same, and a display device including the same are disclosed. In one aspect, a display substrate includes a first gate electrode formed on a base substrate, a scan line electrically connected to the first gate electrode, a gate insulation layer, an etch stop layer and a passivation layer formed on the base substrate to at least partially overlap the first gate electrode and the scan line, and a data line formed on the passivation layer to at least partially overlap the scan line. | 05-28-2015 |
20150293396 | ARRAY SUBSTRATE, FABRICATING METHOD THEREOF AND DISPLAY DEVICE - The present invention discloses an array substrate, a fabricating method of thereof and a display device. The array substrate comprises a base substrate, and a pattern of a gate, a pattern of a gate insulating layer, a pattern of a pixel electrode, a pattern of an ohmic contact layer, a pattern of an active layer, and a pattern of source-drain electrodes formed on the base substrate. The pattern of the pixel electrode is positioned between the pattern of the gate insulating layer and the pattern of the ohmic contact layer. The technical solutions of the present disclosure can reduce one mask process, thus lowering fabrication cost and improving product yield. | 10-15-2015 |
20150294987 | TFT ARRAY SUBSTRATE, DISPLAY PANEL AND DISPLAY DEVICE - A TFT array substrate, a display panel and a display device are disclosed. The TFT array substrate includes a substrate, a display area and a peripheral area surrounding the display area. The display area and the peripheral area are arranged above the substrate. The peripheral area comprises a signal line and a shielding layer arranged above the signal line, and the shielding layer covers the signal line to shield EMI caused by a signal on the signal line. The TFT array substrate, the display panel and the display device can protect the display panel against EMI caused by the signal on the signal lines in the peripheral area, thereby improving stability and reliability of the TFT array substrate, the display panel and the display device, and enhancing sensitivity of a cellphone having the display panel. | 10-15-2015 |
20150294988 | FAN-OUT STRUCTURE AND DISPLAY PANEL USING THE SAME - A display panel comprising a fan-out structure located in a peripheral region is provided. The peripheral region has two border regions and a central region. The fan-out structure of the peripheral region comprises a plurality of first fan-out wires and a plurality of second fan-out wires alternatively arranged with the first fan-out wires. In the border regions, resistance of the first fan-out wire is lower than that of the adjacent second fan-out wire. In the central region, resistance of the first fan-out wire is higher than that of the adjacent second fan-out wire. | 10-15-2015 |
20150301414 | THIN FILM TRANSISTOR ARRAY SUBSTRATE, DISPLAY DEVICE AND METHOD - A thin film transistor array substrate includes a base substrate and a thin film transistor, a second insulation layer, a first electrode and a second electrode formed on the base substrate. The first electrode and the second electrode are used to form an electric field, and the second insulation layer is interposed between the first electrode and the second electrode. The second electrode is a comb-like electrode, and located at a side of the second insulation layer away from the base substrate. The array substrate further includes protrusion structure located at a side of the first electrode close to the base substrate, the position of the protrusion structure corresponds to the slit portions of the comb-like electrode. A manufacturing method of a thin film transistor array substrate and a display device are further provided. | 10-22-2015 |
20150303123 | Array Substrate for Display Device and Manufacturing Method Thereof - The present disclosure provides an array substrate for a display device and a manufacturing method thereof. A transparent electrode pattern (ITO) may be formed between a source/drain metal pattern and a passivation layer located above the source/drain metal pattern, which are formed in a passivation hole area of a non-active area of the array substrate. Accordingly, it may be possible to prevent display failure caused by a delamination phenomenon or peel-off of a material of the passivation layer due to the lack of adhesion strength between a metal layer and the passivation layer in the passivation hole area. | 10-22-2015 |
20150303150 | Array Substrate, Method of Manufacturing The Same and Display Device - An array substrate and manufacturing method thereof, and a display device are provided. The array substrate comprises a TFT, an isolating layer (M), a pixel electrode ( | 10-22-2015 |
20150303221 | ARRAY SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE COMPRISING ARRAY SUBSTRATE - An embodiment of the disclosure provides an array substrate comprising: a base substrate, an active layer and a transparent electrode disposed on the base substrate, an etch stop layer disposed on the active layer and configured for protecting a portion of the active layer, wherein the active layer, the transparent electrode and the etch stop layer are formed through one patterning process and one doping process, the doped region and the first transparent electrode are made of same material and are disposed on the same layer. | 10-22-2015 |
20150303223 | METHOD FOR MANUFACTURING ESD DEVICE, ESD DEVICE AND DISPLAY PANEL - There is disclosed a method for manufacturing an Electro Static Discharge (ESD) device, an ESD device and a display panel, which are capable of addressing an issue that static-electric charges accumulated on the array substrate damage the unformed ESD device and improving a yield ratio of the array substrate. The method includes forming a TFT, a first lead wire, wherein the first lead wire or the second lead wire comprises at least two separate lead-wire segments; depositing a layer of passivation thin film, and forming via-holes for connecting the at least two separate lead-wire segments on the layer of passivation thin film; depositing a layer of transparent conductive film on the substrate on which the via-holes are formed, wherein the layer of transparent conductive film connects the lead-wire segments by the via-holes. | 10-22-2015 |
20150303225 | ARRAY SUBSTRATE, FABRICATION METHOD THEREOF AND DISPLAY DEVICE - An array substrate and a fabrication method thereof and a display device are provided. The fabrication method comprises: preparing a base substrate, the base substrate including a pixel region and a gate on array region; forming a pattern including a gate electrode and a pattern of an active layer on the base substrate, and forming a gate lead on the gate on array region, by a first patterning process; forming a pattern of a gate insulating layer by a second patterning process; forming a pattern including a source/drain electrode by a third patterning process; forming a pattern of a planarization layer by a fourth patterning layer; and forming a pattern including a pixel electrode by a fifth patterning layer. | 10-22-2015 |
20150303314 | Reflective Type Display Device Including Multifunctional Electrode and Method of Manufacturing the Same - A reflective type display device may include: in each of the unit pixel regions of a lower substrate, a gate electrode connected to a gate line; a first insulating layer formed on the gate electrode; a semiconductor layer planarly overlapped with the gate electrode, with the first insulating layer interposed therebetween; a source electrode having one side connected to a data line and the other side formed to be overlapped with a portion of the semiconductor layer; a second insulating layer formed on the semiconductor layer and the source electrode; a contact hole formed by removing a portion of the second insulating layer so as to expose a partial region of the semiconductor layer; and a multifunction electrode formed on an upper portion of the second insulating layer and directly connected to the semiconductor layer through the contact hole. | 10-22-2015 |
20150303388 | DISPLAY SUBSTRATE, MANUFACTURING METHOD THEREOF AND FLEXIBLE DISPLAY DEVICE - The invention provides a display substrate, a manufacturing method thereof and a flexible display device. The display substrate in the present invention includes a base substrate and a vulnerable member arranged on the base substrate, as well as a stress absorption layer arranged between the base substrate and the vulnerable member, wherein the projection of the vulnerable member on the base substrate is within the projection region of the stress absorption layer on the base substrate; the stress absorption layer is not arranged on part of the base substrate. Since the display substrate and the flexible display device provided by the present invention are provided with the stress absorption layer, stress generated during bending may be dispersed through the stress absorption layer to protect the vulnerable member from being damaged, so as to improve the reliability of the display substrate and the flexible display device. | 10-22-2015 |
20150309351 | ULTRA HIGH RESOLUTION LIQUID CRYSTAL DISPLAY HAVING A COMPENSATING THIN FILM TRANSISTOR AT EACH PIXEL - The present disclosure relates to an ultra high-resolution liquid crystal display having a compensating thin film transistor at each pixel. The present disclosure suggests a thin film transistor substrate comprising: gate lines running in horizontal direction and data lines running in vertical direction which define a plurality of pixel area on a substrate; a first gate electrode and a second gate electrode formed by dividing any one gate line disposed at any one of an upper side and a lower side; a first thin film transistor connected to the first gate electrode; and a second thin film transistor connected to the first thin film transistor and the second gate electrode. The flat panel display according to the present disclosure has an ultra high-density resolution over 300 PPI with the high aperture ratio. | 10-29-2015 |
20150309379 | PIXEL UNIT, ARRAY SUBSTRATE, METHOD FOR MANUFACTURING ARRAY SUBSTRATE, METHOD FOR REPAIRING ARRAY SUBSTRATE, AND DISPLAY DEVICE - A pixel unit comprises a pixel electrode, a data line and a TFT, and further comprises: a backup TFT, a source electrode of which is isolated from the data line, and a drain electrode of which is isolated from the pixel electrode; a first repair line, one end of the first repair line and the source electrode of the backup TFT being isolated from each other and there being an overlapping region therebetween, and the other end of the first repair line and the data line or a source electrode of the TFT being isolated from each other and there being an overlapping region therebetween; and a second repair line. | 10-29-2015 |
20150311222 | Array Substrate, Its Manufacturing Method, and Display Device - The present invention provides an array substrate, its manufacturing method, and a display device. The array substrate comprises a gate metal layer, a gate insulating layer, a source/drain metal layer, first common electrode lines arranged on an identical layer to the gate metal layer, a first via hole arranged in the gate insulating layer and corresponding to the first common electrode line, a source/drain metal filling part arranged within the first via hole, a second via hole in communication with the first via hole, and a transparent connection part. The first common electrode lines are, by means of the transparent connection part and the source/drain metal filling part, in electrical connection with each other through the second via hole. According to the present invention, it is able to reduce the depth of the via holes in the array substrate, and improve the uneven diffusion of an alignment layer. | 10-29-2015 |
20150311223 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE - A thin film transistor array substrate and a manufacturing method thereof, and a display device comprising the thin film transistor array substrate, including a gate electrode ( | 10-29-2015 |
20150311224 | THIN FILM TRANSISTOR ARRAY SUBSTRATE, METHOD FOR FABRICATING THE SAME AND DISPLAY DEVICE - Disclosed are a TFT array substrate, a method for fabricating the same and a display device. The TFT array substrate includes a plurality of pixel units, each of the plurality of pixel units includes a common electrode ( | 10-29-2015 |
20150311225 | ARRAY SUBSTRATE, MANUFACTURE METHOD THEREOF, AND DISPLAY DEVICE - Disclosed are an array substrate, a manufacture method thereof, and a display device. The array substrate includes a substrate ( | 10-29-2015 |
20150311226 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A display device includes a substrate including a plurality of pixel areas, a thin film transistor disposed on the substrate, a color filter and a light blocking member disposed on the thin film transistor, an insulating layer which is disposed on the color filter and the light blocking member and includes an exposed region through which the light blocking member is exposed, a pixel electrode which is disposed on the insulating layer and is connected to the thin film transistor through a contact hole, a common electrode which is spaced apart from the pixel electrode with a microcavity therebetween, a roof layer disposed on the common electrode, a liquid crystal layer which is filled in the microcavity, and an overcoat which is disposed on the roof layer and configured to seal the microcavity. | 10-29-2015 |
20150311228 | SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND ELECTRONIC DEVICE - A semiconductor device including: one or more pieces of first wiring having a main wiring section and a bifurcation wiring section; one or a plurality of pieces of second wiring having a trunk wiring section and a plurality of branch wiring sections within a gap region between the main wiring section and the bifurcation wiring section; one or a plurality of transistors each divided and formed into a plurality of pieces, the plurality of branch wiring sections individually functioning as a gate electrode and the one or plurality of transistors having a source region formed within the main wiring section and within the bifurcation wiring section and having a drain region formed between the plurality of branch wiring sections; and one or a plurality of pieces of third wiring electrically connected to the drain region of the one or plurality of transistors. | 10-29-2015 |
20150311231 | ARRAY SUBSTRATE, METHOD FOR MANUFACTURING THE SAME AND DISPLAY APPARATUS - An array substrate, a method for manufacturing the same and a display apparatus are provided. The array substrate comprises: a substrate ( | 10-29-2015 |
20150311232 | ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE - The invention discloses an array substrate and a manufacturing method thereof and a display device, which can solve the problems such as complicated, high cost, time-consuming process in the prior art, and increase the storage capacitance. In the array substrate, data lines and a common electrode line are provided in the same layer on the base substrate and below an active layer, the data lines and the common electrode line are provided separately, the common electrode is provided with a connection part which partly overlaps with the common electrode line in an orthographic projection direction, and the common electrode is electrically connected to the common electrode line through a first via between the connection part and the common electrode line. | 10-29-2015 |
20150311236 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND FABRICATING METHOD THEREOF - A thin film transistor array substrate is discussed. The thin film transistor array substrate includes, according to one embodiment, gate and data lines crossing each other, a gate insulation film, a gate electrode, an active layer, an etch stop layer formed on the active layer to define a channel region of the active layer, and a source electrode and a drain electrode formed on the active layer. The etch stop layer is between the source and drain electrodes spaced apart from the etch stop layer. The source electrode and the drain electrode include a first electrode layer and a second electrode layer disposed on the first electrode. The first electrode layer is formed from a dry-etchable material and the second electrode layer is formed from a wet-etchable material. | 10-29-2015 |
20150311237 | REWORK METHOD OF ARRAY SUBSTRATE FOR DISPLAY DEVICE AND ARRAY SUBSTRATE FORMED BY THE METHOD - The present invention provides a method of reworking an array substrate including a gate metal layer, a gate insulation layer (G | 10-29-2015 |
20150311344 | THIN-FILM FIELD EFFECT TRANSISTOR, DRIVING METHOD THEREOF, ARRAY SUBSTRATE, DISPLAY DEVICE, AND ELECTRONIC PRODUCT - The disclosure provides a thin film field effect transistor, a driving method thereof, an array substrate, a display device and an electronic product. The thin film field effect transistor comprises a gate metal layer and a semiconductor layer, and further comprises a guide layer, wherein when an electric field is formed between the gate metal layer and the semiconductor layer, an electric field is also formed between the guide layer and the gate metal layer, the semiconductor layer accumulates electrons or holes to reinforce the electric field between the gate metal layer and the semiconductor layer by utilizing the electric field between the guide layer and the gate metal layer. Through the guide layer, it is able to affect the current characteristics of the thin film field effect transistor by improving its structure, thereby to reduce a threshold voltage and a leakage current. | 10-29-2015 |
20150311351 | THIN FILM TRANSISTOR AND DISPLAY DEVICE - For improved high-definition of liquid crystal display devices and the use thereof in bright places, luminance of backlights is being increased. Thus, when a light-shielding layer is employed for suppressing a light leakage current, characteristic fluctuations of transistors are caused, which may result in showing faulty display. In a dual-gate thin film transistor having a floating light-shielding layer, the layout is designed in such a manner that the film thickness of the insulating layer is equal to or more than 200 nm and equal to or less than 500 nm and that Sg/Sd becomes 4.7 or more, provided that an opposing area between the light-shielding layer and a drain region in a place at the outermost side of the active layer is Sd and the opposing area between the light-shielding layer and the gate electrode is Sg. | 10-29-2015 |
20150311472 | DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - Provided are a display apparatus and a method of manufacturing the same. The display apparatus includes a display substrate arranged with a display portion including a display device; a sealing substrate disposed to face the display substrate; and a sealing portion that bonds the display substrate and the sealing substrate and surrounds the display portion. The sealing portion includes a first sealing portion that includes a sealing material and an insulating layer that includes at least one first opening; and a second sealing portion that is disposed outside the first sealing portion and includes at least one gas hole. | 10-29-2015 |
20150316803 | CURVED SURFACE DISPLAY APPARATUS AND METHOD FOR PRODUCING THE SAME - An embodiment of the present invention discloses a curved surface display apparatus and a method for producing the same, which can simplify the structure of the curved surface display apparatus and reduce its producing process. The method comprises: adhering frame regions of a first substrate and a second substrate to each other by using a sealing agent to form the assembled first substrate and second substrate, the first substrate and the second substrate having different coefficients of thermal expansion; heating the assembled first substrate and second substrate from a first predetermined temperature value at which the sealing agent is not curable to a second predetermined temperature value at which the sealing agent is curable; and cooling the heated first substrate and second substrate. | 11-05-2015 |
20150316824 | Active Matrix Circuit, Method of Manufacturing Active Matrix Circuit and Image Display Apparatus - The active matrix circuit comprises a protection circuit which protects an active element from static electricity. In the protection circuit, a TFT (switching element) is connected via a connection wire between gate wires (signal wires). The connection wire includes a cutoff part, and a mark representing the cutoff part is located. A middle point which is equally distant from two contact holes (connection points) closest to the connection wire is included in a range of the cutoff part. In a case where a defect occurs, the cutoff part of the connection wire connected to the TFT concerned with the defect is cut. The protection circuit is modified by the cutting. The cutoff part is away from the contact hole, thereby preventing an electrically conductive material which disperses from adhering to the contact hole. | 11-05-2015 |
20150316825 | Z-Inversion Type Display Device and Method of Manufacturing the Same - The present invention provides a Z-inversion type display device comprising a gate line and a data line that intersect with each other to define a pixel area on a substrate, a thin film transistor that includes a gate electrode, a semiconductor layer, a source electrode and a drain electrode, and a pixel electrode that is formed in the pixel area, and is electrically connected to the drain electrode of the thin film transistor, wherein the drain electrode completely overlaps the gate line such that a drain electrode area is wholly included in a gate line area on a plan view. | 11-05-2015 |
20150318310 | Array Substrate and Method for Manufacturing the Same, and Display Device - Embodiments of the invention disclose an array substrate and a method for manufacturing the same, and a display device. The method for manufacturing an array substrate comprising: forming a gate metal layer, wherein the gate metal layer comprises gate lines; film-forming an active layer and film-forming a signal line metal layer, wherein the signal line metal layer comprises data lines; and forming both a pattern of the active layer and a pattern of the signal line metal layer simultaneously using a half-tone mask process, wherein after film-forming the active layer and before film-forming the signal line metal layer, the method further comprising: hollowing out a first region of the active layer through a patterning process, wherein the first region is below the data lines in a display area, and the first region excludes portions of the active layer corresponding to overlapping regions of the data lines and the gate lines. | 11-05-2015 |
20150318313 | ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, DISPLAY DEVICE - An array substrate, comprising a display region and a GOA region. In the GOA region, a gate metal electrode, a gate insulating layer, an active layer, a transition layer, and a source-drain metal electrode are formed in sequence from bottom to top, and a via hole is provided penetrating the transition layer, the active layer and the gate insulating layer, the source-drain metal electrode is electrically connected to the gate metal electrode through the via hole; and at an edge of the via hole, there is formed an angle opening upward at edges of the transition layer and the active layer. There are further disclosed a manufacturing method of the array substrate and a display device provided with the array substrate. | 11-05-2015 |
20150318315 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD FOR MAKING THE SAME - The present application provides a thin film transistor array substrate and a method for making the same. A technical solution of the present application is to divide a removable area from a planarization layer of a thin film transistor array substrate, all organic photoresist material in the removable area is entirely removed, and sealant is directly spread on the protection layer, which is easier to stick, to achieve better sealant adhesion effect. In this way, the whole structure of a TFT-LCD using the thin film transistor array substrate provided by the present application is adhered more firmly. Compared with the prior art, the method of the present application can improve the product pass rate effectively, and is simple and easy to execute. | 11-05-2015 |
20150318337 | ORGANIC LIGHT EMITTING DIODE DISPLAY - An organic light emitting diode (OLED) display including: a substrate; a semiconductor layer disposed on the substrate and including a switching semiconductor layer and a driving semiconductor layer connected to the switching semiconductor layer; a first gate insulating layer disposed on the semiconductor layer; a switching gate electrode and a driving gate electrode disposed on the first gate insulating layer and respectively overlapping with the switching semiconductor layer and the driving semiconductor layer; a second gate insulating layer disposed on the switching gate electrode and the driving gate electrode; a driving voltage line configured to transmit a driving voltage and disposed on the second gate insulating layer; an interlayer insulating layer disposed on the driving voltage line and the second gate insulating layer; and a data line configured to transmit a data signal and disposed on the interlayer insulating layer. | 11-05-2015 |
20150318362 | THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - A thin film transistor and manufacturing method thereof, an array substrate ( | 11-05-2015 |
20150325591 | ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF AS WELL AS DISPLAY PANEL - An array substrate and a manufacturing method thereof as well as a display panel are provided. The manufacturing method comprises: forming a pattern including a scanning line ( | 11-12-2015 |
20150325592 | SUBSTRATE AND DISPLAY DEVICE - The present disclosure provides a substrate and a display device. The substrate is an array substrate or a color filter substrate of a display panel. The substrate includes at least one spacer-supporting region. The spacer-supporting region includes a recess configured to support a spacer. By the presence of the recess configured to support a spacer in the spacer-supporting region, an upper of the spacer abuts within the recess. When the display panel is squeezed, the upper of the spacer does not move, thereby ensuring a uniform cell gap of the display panel and improving quality of products. | 11-12-2015 |
20150325594 | DISPLAY AND ELECTRONIC APPARATUS - A display includes: row interconnects configured to be disposed along rows; column interconnects configured to be disposed along columns; and pixels configured to be disposed corresponding to intersections of the row and column interconnects arranged in a lattice manner. Each of the pixels includes at least a sampling transistor, a drive transistor, a holding capacitor, and a light-emitting element. The sampling transistor is turned on in response to a control signal supplied from one of the interconnects to thereby sample a video signal supplied from another of the interconnects and write the video signal to the holding capacitor. The drive transistor supplies the light-emitting element with a drive current dependent upon the video signal written to the holding capacitor. | 11-12-2015 |
20150325705 | ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE - A array substrate is disclosed. The array substrate includes: a substrate ( | 11-12-2015 |
20150333113 | Light Emitting Device and Electronic Appliance - The present invention is to provide a light emitting device capable of obtaining a certain luminance without influence by the temperature change, and a driving method thereof. A current mirror circuit formed by using a transistor is provided for each pixel. The first transistor and the second transistor of the current mirror circuit are connected such that the drain currents thereof are maintained at proportional values regardless of the load resistance value. Thereby, a light emitting device capable of controlling the OLED driving current and the luminance of the OLED by controlling the drain current of the first transistor at a value corresponding to a video signal in a driving circuit, and supplying the drain current of the second transistor to the OLED, is provided. | 11-19-2015 |
20150338691 | DISPLAY PANEL AND METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE - The invention provides a display panel and a method for manufacturing the same, and a display device, belonging to the field of liquid crystal display technology, and can solve the problem existing in the prior art that amount of light absorbed by the solar cell in the display panel is limited. The display panel of the invention includes a light-transmissive region formed of sub-pixels, and at least one solar cell, and the solar cell is at least arranged at a part of the light-transmissive region of the display panel to supply power to the display panel; both a first electrode and a second electrode of the solar cell are made of a transparent conductive material, and at least light with the same color as the sub-pixels at the light-transmissive region can transmit the solar cell. | 11-26-2015 |
20150340378 | Pulse Output Circuit, Shift Register and Display Device - A pulse is inputted to TFTs | 11-26-2015 |
20150340387 | DISPLAY APPARATUS - Disclosed herein is a display apparatus, including, a panel having a plurality of pixels disposed in a matrix and each including a self-luminous element for emitting light, the panel including first to third conductive layers laminated in order on a supporting substrate, a first contact portion between the first and second conductive layers and a second contact portion between the second and third conductive layers being disposed at the same position in a planar direction. | 11-26-2015 |
20150340510 | DISPLAY DEVICE - According to one embodiment, a display device includes a first light shielding layer, a second light shielding layer, a first semiconductor layer, a second semiconductor layer, a gate line, a first source line, a second source line, a switching element, and a pixel electrode, wherein an area in which the first light shielding layer and the pixel electrode are opposed to each other and an area in which the second light shielding layer and the pixel electrode are opposed to each other are equal in size. | 11-26-2015 |
20150340512 | THIN FILM TRANSISTOR, ARRAY SUBSTRATE, METHOD OF FABRICATING SAME, AND DISPLAY DEVICE - A thin film transistor, an array substrate, a method of fabricating the same, and a display device are provided. The thin film transistor includes a substrate plate, and an active layer, a source, and a drain which are arranged on the substrate plate. The thin film transistor also includes an inclined portion which is arranged on the substrate plate in an inclined manner. The active layer is at least partially arranged on the inclined portion. The source and the drain are arranged over the active layer and at least partially overlap the active layer. In this manner, the size of the thin film transistor in a direction parallel with the substrate plate can be effectively reduced. | 11-26-2015 |
20150346546 | COA SUBSTRATE, METHOD FOR FABRICATING THE SAME AND DISPLAY DEVICE - A COA substrate and its fabrication method as well as a display device are disclosed. The method includes steps of: forming a TFT ( | 12-03-2015 |
20150346565 | Display Device and Method of Manufacturing Thin Film Transistor - The plurality of thin film transistors are provided corresponding to intersections between a plurality of gate wires and a plurality of source wires, respectively. The pixel electrodes are connected to the thin film transistors. The counter electrodes face the pixel electrodes. The leading line is provided outside a display area and connected to one of gate wires. The conversion portion is provided in the vicinity of the display area, at which the leading line is connected to another wiring layer. The insulating film is provided on the conversion portion at a side of the counter substrate. The conductive layer faces the conversion portion with the insulating film interposed therebetween and has transparency. To the conductive layer together with the counter electrodes, applied is a common potential. | 12-03-2015 |
20150355486 | Liquid Crystal Display Panel, Thin Film Transistor Array Substrate and Color Filter Substrate - The invention discloses a LCD panel including a display substrate. The display substrate includes a transparent substrate, pixel units, dummy pixel units, and a first wall. The transparent substrate includes a visual region, a dummy pixel setting region located outside the visible region, and a frame glue setting region located outside the dummy pixel setting region. The pixel units are disposed on the transparent substrate in the visual region. The dummy pixel units are disposed on the transparent substrate in the dummy pixel setting region. The first wall is set on the transparent substrate between the dummy pixel setting region and the frame glue setting region. The invention avoids the abnormal situation happening when coating the frame glue in the frame glue setting region, avoids the problems caused by the difficulty in controlling the accuracy of an alignment film, e.g. Mura, and improves the product yield. | 12-10-2015 |
20150355492 | PIXEL MATRIX AND DISPLAY USING THE SAME - A pixel matrix includes pixel units. The pixel units are arranged in a repeating pattern, in which each of the pixel units includes transparent pixels, reflective pixels, and switch components. Each of the transparent pixels includes a transparent electrode and a transparent color resist layer disposed on the transparent electrode. Each of the reflective pixels includes a reflective electrode. The switch components are connected to the transparent electrodes of the transparent pixels and the reflective electrodes of the reflective pixels respectively for driving the transparent pixels and the reflective pixels individually. | 12-10-2015 |
20150355515 | PIXEL STRUCTURE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE - The present invention provides a pixel structure and a display device, the pixel structure comprises thin film transistors; a substrate, and common electrodes, a gate insulation layer, a passivation layer and pixel electrodes stacked in order on the substrate. The pixel structure further comprises electrically conductive electrodes located between the passivation layer and the gate insulation layer, and the electrically conductive electrodes are located within overlapped regions between the pixel electrodes and the common electrodes and electrically connected with the pixel electrodes, respectively. In the above pixel structure, the common electrode and both of the electrically conductive electrode and the pixel electrode form storage capacitors, so that there is only one film layer, that is, the gate insulation layer, between the pixel electrode and the common electrode, thereby reducing a distance between two parts forming the storage capacitor, increasing the storage capacitor, and improving display performance of the display device. | 12-10-2015 |
20150355517 | ARRAY SUBSTRATE AND DISPLAY DEVICE - The present disclosure discloses an array substrate and a display device so as to alleviate the toothed edge appearance when an image is displayed in a dual-gate array substrate structure. The array substrate includes at least one row of pixel elements, a first gate line, and a second gate line. The first gate line and the second gate line are disposed on the same side of the least one row of pixel elements. Thin film transistors are disposed in the pixel elements, and gates of the thin film transistors in two adjacent pixel elements are coupled with the first gate line and the second gate line, respectively. | 12-10-2015 |
20150357389 | EL Display Device and Method for Manufacturing the Same - A plurality of pixels are arranged on the substrate. Each of the pixels is provided with an EL element which utilizes as a cathode a pixel electrode connected to a current control TFT. On a counter substrate, a light shielding film, a first color filter having a first color and a second color filter having a second color are provided. The second color is different from the first color. | 12-10-2015 |
20150357390 | DISPLAY DEVICE AND ELECTRONIC EQUIPMENT - A display device includes a pixel array section, the pixel array section having pixels arranged in a matrix form, at least one of the pixels including an electro-optical element, a write transistor, a capacitor, a drive transistor, and a switching transistor. A write scan line is disposed for each pixel row of the pixel array section and adapted to convey a write signal to be applied to a gate electrode of the write transistor. The wiring structure of the write scan line does not cross a wiring pattern connected to a gate electrode of the drive transistor. | 12-10-2015 |
20150357391 | DISPLAY DEVICE WITH TRANSISTOR SAMPLING FOR IMPROVED PERFORMANCE - A display device including a pixel array having a plurality of pixels arranged in a matrix form, each of the pixels including a sampling transistor configured to sample a data potential from a video signal line which is insulated from and intersects a control line in response to the change in potential of the control line, and a light-emitting element configured to emit light at the brightness commensurate with the magnitude of the post-sampling data potential. | 12-10-2015 |
20150357478 | THIN FILM TRANSISTOR DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME - A thin film transistor display panel according to an exemplary embodiment of the present invention includes a substrate, a first insulating layer formed on the substrate, a semiconductor layer formed on the first insulating layer, a second insulating layer formed on the semiconductor layer, and a gate electrode formed on the second insulating layer, in which the first insulating layer includes a light blocking material, and a thickness of the first insulating layer is greater than or equal to a thickness of the second insulating layer. | 12-10-2015 |
20150362771 | COLOR FILTER ARRAY SUBSTRATE, DISPLAY DEVICE AND MANUFACTURING METHOD OF COLOR FILTER ARRAY SUBSTRATE - The invention discloses a color filter array substrate, a display device, and a manufacturing method of the color filter array substrate. The color filter array substrate comprises a substrate, a thin film transistor array formed on the substrate, and a color filter formed on the thin film transistor array, wherein the color filter array substrate further comprises a black matrix formed on the color filter, and a planarization layer formed on the black matrix. In the invention, position of the black matrix in the color filter array substrate is changed, and the planarization layer is formed on the black matrix, so that the black matrix is isolated from the first and second electrode layers, thus the black matrix is effectively prevented from affecting the electric field between the first and second electrode layers. | 12-17-2015 |
20150364494 | ARRAY SUBSTRATE AND DISPLAY DEVICE - The present disclosure provides an array substrate and a display device. The array substrate includes gate lines, data lines, and thin film transistors (TFTs) connected to the gate lines and the data lines. At least one of the data lines is divided into a first branch and a second branch at a predetermined region where an intersection of the at least one of the data lines and at least one of the gate lines is located. The first branch overlaps the at least one of the gate lines, and has a width less than a width of a non-overlapping portion of the at least one of the data lines which does not overlap the at least one of the gate lines. The second branch overlaps a gate electrode of a corresponding one of the TFTs, and serves as, or is connected to, a source electrode of the corresponding TFT. | 12-17-2015 |
20150364495 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A display substrate includes a gate line extending in a first direction, a floating electrode disposed on the same layer as the gate line, and a data line. Opposite ends of the floating electrode are electrically connected with the data line. The floating electrode extends in a second direction that crosses the first direction. The data line includes a recess disposed adjacent to the gate line. The data line overlaps with the floating electrode and also extends in the second direction. | 12-17-2015 |
20150364497 | THIN FILM TRANNSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - The present disclosure provides a thin film transistor array. In an exemplary embodiment, the thin film transistor array includes: a substrate; a gate line including a gate pad and disposed on the substrate; a gate insulating layer disposed on the gate line and the gate pad; a data line including a data pad and disposed on the gate insulating layer; a first passivation layer disposed on the data line; a first electrode disposed on the first passivation layer; a second passivation layer disposed on the first electrode; and a second electrode disposed on the second passivation layer. The gate pad is exposed through a first contact hole, and the gate insulating layer, the first passivation layer, and the second passivation layer include at least a portion of the first contact hole. | 12-17-2015 |
20150370136 | ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, DISPLAY DEVICE - The present disclosure provides an array substrate including a substrate, a plurality of pixel units arranged on the substrate. Each pixel unit includes a TFT, first transparent electrode and a second transparent electrode which are insulated from each other, the first transparent electrode includes a plurality of strip electrodes, the second transparent electrode includes a first electrode portion and a second electrode portion, the second electrode portion electrically connects to the first electrode portion, the first electrode portion includes a plurality of strip electrodes, the strip electrodes of the first electrode portion and the strip electrodes of the first transparent electrode are arranged in a staggered manner, the second electrode portion is arranged on a layer different from that of the first transparent electrode and the first electrode portion. | 12-24-2015 |
20150370138 | LIQUID CRYSTAL DISPLAY - A liquid crystal display includes a first substrate, a gate line and a data line disposed on the first substrate, a first insulating layer disposed on the gate line and the data line, a first electrode disposed on the first insulating layer and having a flat form in a planar shape, a second insulating layer disposed on the first electrode, and a second electrode disposed on the second insulating layer and including a plurality of branch electrodes, where a width of a branch electrode of the plurality of branch electrodes is equal to or less than about 2 micrometers. | 12-24-2015 |
20150372011 | ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, DISPLAY DEVICE - An array substrate and manufacturing method thereof, and a display device are capable of preventing light reflection from a drain electrode, and guaranteeing the display effect of the display device. The array substrate includes a drain electrode of a thin film transistor unit, an insulating layer and a pixel electrode. The insulating layer is located between the drain electrode and the pixel electrode, and has a via hole formed therein, and the drain electrode and the pixel electrode are connected through the via hole. A surface of the pixel electrode at the via hole is a rough face. | 12-24-2015 |
20150372012 | ARRAY SUBSTRATE, METHOD OF PRODUCING ARRAY SUBSTRATE, AND DISPLAY PANEL - An array substrate, a method of producing the array substrate, and a display panel incorporating the array substrate are disclosed. The array substrate includes a substrate, a gate line, a gate insulating layer, and a data line. The gate line and/or the data line is provided with a via hole at a position corresponding to a spacer. In this manner, a problem of a display panel having gaps of different sizes after assembly because of nonuniform thicknesses of the gate line and/or the data line can be avoided, which, in turn, prevents inhomogeneous color in the display. | 12-24-2015 |
20150372013 | ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE - The present invention provides an array substrate, a manufacturing method thereof and a display device, relates to the field of display technology. The array substrate comprises: a substrate; a gate metal layer comprising gate lines; a source and drain metal layer comprising data lines, the gate lines and the data lines intersecting with each other to define a plurality of sub-pixel areas; a pixel electrode layer provided on the substrate, which comprises a plurality of pixel electrodes which are in one-to-one correspondence with the plurality of sub-pixel areas; a common electrode layer provided on the substrate, which is provided with a plurality of cutting hole at positions corresponding to spaces between the pixel electrodes; a first insulating layer provided between the pixel electrode layer and the common electrode layer; and a second insulating layer provided between the gate metal layer and the source and drain metal layer. | 12-24-2015 |
20150372014 | ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE - The present invention relates to an array substrate, a method for manufacturing the same and a display device. The array substrate comprises a substrate, and a first region and a second region that are provided on the substrate and adjacent to each other and a difference in level between the two exceeds a threshold, a difference-in-level compensation pattern is provided on the substrate, which overlaps with both the first region and the second region in a direction perpendicular to the substrate and does not exceed the first region and the second region. By the technical solution of the present invention, the difference in level between the data line and an adjacent region on the array substrate is reduced, so that during a rubbing process, the rubbing area of a polyimide solution is increased, and the risk of light leakage is reduced without a decrease of the pixel aperture ratio. | 12-24-2015 |
20150372016 | ARRAY SUBSTRATE AND DISPLAY DEVICE - The invention provides an array substrate and a display device. The array substrate comprises a plurality of gate lines and a plurality of data lines which are arranged crosswise and are insulated from each other, and a plurality of pixel units, wherein each pixel unit comprises a control section and a display section, each of which is symmetrically distributed with the central line of a corresponding gate line as a symmetry axis, the control section is located at a cross-point of the gate line and the data line, and is at least partially overlapped with the gate line and the data line, the display section is located at a region defined by the gate line and the data line; and the control section is connected to the display section to control the display section for display. In the present invention, the aperture ratio of the array substrate is increased. | 12-24-2015 |
20150372018 | ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF AND DISPLAY PANEL - The invention provides an array substrate, a method for manufacturing the array substrate, and a display panel, the array substrate includes a plurality of thin film transistors, and the method includes: S1. preparing a base substrate on which sources and drains of the thin film transistors are formed; S2. forming an insulation layer on the base substrate such that the insulation layer includes spacer regions and a plurality of strip-shaped electrode regions, and every two adjacent strip-shaped electrode regions are separated from each other by the spacer region; S3. forming a spacer layer on the spacer regions of the insulation layer; S4. forming a pattern including strip-shaped electrodes on the strip-shaped electrode regions of the insulation layer; S5. peeling off the spacer layer on the spacer region. The invention can prevent every two adjacent strip-shaped electrodes from interconnecting due to etching residues, so as to improve product performance. | 12-24-2015 |
20150372020 | THIN FILM TRANSISTOR AND METHOD FOR REPAIRING THE SAME, GOA CIRCUIT AND A DISPLAY DEVICE - The present disclosure provides a thin film transistor and method for repairing the same, GOA circuit and a display device, which aims to solve the problem that the source and/or drain of thin film transistor can not be repaired once it is short circuited with other conductive functional layers. The thin film transistor comprises a source, a drain, and a gate. The source and the drain have a comb shape and respectively comprise a plurality of comb-tooth portions and comb-handle portions for connecting each comb-tooth portion, and the gate is insulated from the source and the drain. Comb-tooth portions of the source are arranged by an interval with respect to comb-tooth portions of the drain. The comb-handle portion of the source and the gate do not overlap in their projections in the vertical direction, and the comb-handle portion of the drain and the gate do not overlap in their projections in the vertical direction. | 12-24-2015 |
20150372021 | DISPLAY DEVICE, ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME - A manufacturing method of an array substrate, an array substrate and a display device are provided. The array substrate includes a first thin film transistor and a pixel electrode ( | 12-24-2015 |
20150372024 | ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE - The invention discloses an array substrate, a manufacturing method thereof and a display device. The array substrate includes a gate, an active layer, a source and a drain on a substrate, and a pixel electrode located above the drain and lapped with the drain, and a part of the pixel electrode lapped with the drain is a lapping part of the pixel electrode; the array substrate further includes a first insulation layer located below the pixel electrode and in contact with the drain, the first insulation layer extends along the edge of the lapping part towards a direction away from the lapping part, part of the drain to be in contact with the lapping part is exposed from the first insulation layer, and the plane where the upper surface of the first insulation layer is located is lower than the plane where the upper surface of the drain is located. | 12-24-2015 |
20150372201 | ARRAY PANEL AND MANUFACTURING METHOD FOR THE SAME - An array panel including a substrate, a scanning line, a data line, and a pixel array is disclosed. A pixel unit in the pixel array includes a thin film transistor, a pixel electrode, and a color filter layer disposed between a first plane and a second plane. The first plane is a plane in which a gate electrode of the thin film transistor is located. The second plane is a plane in which the pixel electrode is located. The scanning line, the data line, and the pixel array are disposed on the substrate. The present invention is advantageous since it reduces power consumption. | 12-24-2015 |
20150378202 | LIQUID CRYSTAL PANEL AND MANUFACTURING METHOD OF THE LIQUID CRYSTAL PANEL - The present disclosure provides a liquid crystal panel, including: a first substrate and a second substrate opposite to the first substrate; a first optical spacer formed on one side of the first substrate facing the second substrate; a pad formed on one side of the second substrate facing the first substrate and corresponding to the first optical spacer; a TFT formed on the side of the second substrate facing the first substrate, being provided with a plurality of scanning lines and a plurality of data lines vertically intersecting with the scanning lines; and a second optical spacer and a third optical spacer formed on the side of the first substrate facing the second substrate, with the second optical spacer corresponding to two sides of the TFT along a direction of the scanning line. | 12-31-2015 |
20150378209 | SUBSTRATE FOR ELECTRO-OPTICAL DEVICE, ELECTRO-OPTICAL DEVICE, ELECTRONIC EQUIPMENT, AND METHOD FOR MANUFACTURING SUBSTRATE FOR ELECTRO-OPTICAL DEVICE - A substrate for an electro-optical device includes a substrate main body | 12-31-2015 |
20150380434 | ARRAY SUBSTRATE AND A DISPLAY DEVICE - The embodiment of the present invention provides an array substrate and a display device, which relates to the field of display technology, where the aperture opening ratio can be increased; the array substrate comprises a plurality of subpixels, each of the subpixels comprising: at least one thin film transistor, an organic resin layer, and uncontacted first pixel electrode and second pixel electrode arranged along the data line direction; the first pixel electrode extends to the above of a first gate line, the second pixel electrode extends to the above of a second gate line, the first gate line and the second gate line are adjacent to each other; the first pixel electrodes of two adjacent subpixels located at two sides of the first gate line are connected above the first gate line, the second pixel electrodes of two adjacent subpixels located at two sides of the second gate line are connected above the second gate line; the first pixel electrodes of two adjacent subpixels are electrically connected with the drain of at least one thin film transistor, the second pixel electrodes are electrically connected with the drain of at least one thin film transistor. It is used in manufacture of an array substrate and a display device that need to increase the aperture opening ratio. | 12-31-2015 |
20150380437 | THIN-FILM TRANSISTOR ARRAY SUBSTRATE, MANUFACTURING METHOD THEREFOR AND DISPLAY DEVICE THEREOF - A thin-film transistor array substrate is disclosed. The array substrate includes a support substrate, a plurality of scan lines on the support substrate, and a plurality of data lines on the support substrate, where the plurality of scan lines are insulated and intersect with the plurality of data lines. The array substrate also includes a plurality of pixel units located near intersections of the scan lines and the data lines, a first metal layer on the support substrate, and an insulating layer on the first metal layer, where the insulating layer includes a plurality of via holes, each exposing a portion of the first metal layer. The array substrate also includes a semiconductor layer on the insulating layer and electrically connected to the first metal layer, and a second metal layer on the semiconductor layer and electrically connected to the semiconductor layer. | 12-31-2015 |
20150380439 | FLEXIBLE DISPLAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND FLEXIBLE DISPLAY DEVICE - The present invention provides a flexible display substrate, comprising a flexible base; an ultraviolet reflecting layer disposed on the flexible base and capable of reflecting ultraviolet light and transmitting visible light, comprising a stacked structure consisting of alternate first transparent material layers and second transparent material layers, wherein the numbers of the two kinds of transparent material layers are equal, and are at least two respectively, and the two kinds of transparent material layers also satisfy: 4nd=λ, wherein d is the thickness of any one of the transparent material layers, n is a refractive index of the transparent material layer and λ is the wavelength of ultraviolet light; and a display structure disposed above the ultraviolet reflecting layer. The present invention is applicable to flexible display substrates, particularly flexible array substrates comprising low-temperature polycrystalline silicon thin film transistors. | 12-31-2015 |
20150380442 | ARRAY SUBSTRATE AND DISPLAY DEVICE - An array substrate and a display device incorporating the array substrate are disclosed. The array substrate comprises a first material layer located on a thin film transistor, the first material layer having a first via hole; a conductive interlayer located on the first material layer, the conductive interlayer being electrically connected with the drain of the thin film transistor through the first via hole; and a second material layer located on the conductive interlayer, the second material layer having a second via hole staggered with the first via hole. A pixel electrode is located on the second material layer. The conductive interlayer is electrically connected with the pixel electrode through the second via hole, so as to form a storage capacitance with a common electrode. The array substrate has an increased storage capacitance and provides the display device with improved display stability, pixel opening ratio, and display quality. | 12-31-2015 |
20150380475 | BOTTOM-EMITTING SUBSTRATE, DISPLAY DEVICE AND MANUFACTURING METHOD OF SUBSTRATE - A bottom-emitting substrate, a display device and a method for manufacturing the bottom emitting substrate are provided. The bottom-emitting substrate comprises: a base substrate ( | 12-31-2015 |
20150380565 | THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME, ARRAY SUBSTRATE AND DISPLAY DEVICE - The present disclosure provides a TFT, a method for manufacturing the same, an array substrate and a display device, so as to effectively reduce a TFT edge leakage current I | 12-31-2015 |
20160004127 | ARRAY SUBSTRATE, DRIVING METHOD OF ARRAY SUBSTRATE, AND DISPLAY DEVICE - Disclosed are an array substrate, a driving method of the array substrate, and a display device. The array substrate includes gate lines ( | 01-07-2016 |
20160005600 | METHOD OF MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING DISPLAY APPARATUS, THIN FILM TRANSISTOR SUBSTRATE, AND DISPLAY APPARATUS - A method of manufacturing a thin film transistor substrate includes forming an amorphous silicon layer on a substrate, the substrate having a rectangular shape, and irradiating the amorphous silicon layer with a laser beam at a random pitch, such that the amorphous silicon layer is crystallizes into a polycrystalline silicon layer, wherein the laser beam has a major axis and a minor axis, the major axis being non-parallel with respect to sides of the substrate. | 01-07-2016 |
20160005766 | ARRAY SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, DISPLAY DEVICE - The embodiments of the present invention disclose an array substrate, a method for manufacturing the same, and a display device. With the solutions of the embodiments, aperture rate is increased, and gate signal delay caused by increased connection resistance of gate line is alleviated. The array substrate of the present invention includes a thin film transistor; a substrate; a common electrode provided on the substrate; a gate line comprising a plurality of separate segments arranged to be spaced apart from each other and connected with each other through a bridge; and a common electrode line provided to be spaced apart from the gate line, the gate line and the common electrode line being in the same layer, wherein the common electrode line comprises a connection segment extending through a gap between separate segments to electrically connect with the common electrode directly. | 01-07-2016 |
20160005767 | ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE - An array substrate, a manufacturing method thereof and a display device are provided; in the array substrate, two adjacent rows of the pixel units ( | 01-07-2016 |
20160005768 | THIN FILM TRANSISTOR ARRAY PANEL - A thin film transistor array panel includes: a data line which extends in a column direction and transfers a data voltage; a first pixel electrode and a second pixel electrode connected to the data line and adjacent in a row direction; a first thin film transistor connected to the first pixel electrode and the data line, and including a first source electrode and a first drain electrode; and a second thin film transistor connected to the second pixel electrode and the data line, and including a second source electrode and a second drain electrode. The first pixel electrode is at the right of the data line, the second pixel electrode is at the left of the data line, and relative positions of the first source electrode and the first drain electrode are the same as relative positions of the second source electrode and the second drain electrode. | 01-07-2016 |
20160005798 | EL DISPLAY DEVICE - An EL display device including a light emitter configured to emit at least red, green, and blue light; and a thin film transistor array that controls light emission. The light emitter includes light-emitting layers within areas defined by a bank that emit at least red, green, and blue light. The light emitter further includes electrodes that extend under the bank and hole transport layers that are above the electrodes within the areas defined by the bank, the light-emitting layers being formed on the hole transport layers. The hole transport layers each have a main portion and a peripheral protrusion in contact with a side surface of the bank that protrudes upwards from the main portion. The light-emitting layers each have a peripheral protrusion in contact with a side surface of the bank, formed above a corresponding one of the peripheral protrusions. | 01-07-2016 |
20160005804 | ORGANIC LIGHT EMITTING DISPLAY AND METHOD OF FABRICATING THE SAME - A subpixel structure for a display device and a method of fabricating the display device are discussed. The subpixel structure can include a light emitting diode, a first switching transistor having a first gate electrode and a first active layer, a driving transistor having a second gate electrode and a second active layer, a second switching transistor including a third gate electrode and a third active layer, and at least one of the first, second and third gate electrodes is disposed between the corresponding first, second and third active layers and a substrate. | 01-07-2016 |
20160005880 | THIN FILM SEMICONDUCTOR DEVICE - According to one embodiment, provided is a thin film transistor with which it is possible to reduce the leakage current and thereby, for a liquid crystal display device, to ensure a good display quality. The thin film transistor includes a semiconductor layer, gate electrodes, first light-blocking electrodes, and second light-blocking electrodes. The first light-blocking electrodes are disposed opposite to the gate electrodes with respect to the semiconductor layer and opposed to channel regions to block light incident into the channel regions. The second light-blocking electrodes are disposed opposite to the semiconductor layer with respect to the gate electrodes, arranged to block light incident into the channel regions, and electrically connected with one of a signal line and a pixel electrode. | 01-07-2016 |
20160011466 | ARRAY SUBSTRATE, LIQUID CRYSTAL DISPLAY PANEL AND DISPLAY DEVICE | 01-14-2016 |
20160011467 | ARRAY SUBSTRATE, LIQUID CRYSTAL DISPLAY PANEL AND DISPLAY DEVICE | 01-14-2016 |
20160011473 | TFT ARRANGEMENT FOR DISPLAY DEVICE | 01-14-2016 |
20160011475 | LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF AND ELECTRONIC DEVICE | 01-14-2016 |
20160011478 | Liquid Crystal Display Device | 01-14-2016 |
20160013060 | THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE | 01-14-2016 |
20160013210 | ARRAY SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE | 01-14-2016 |
20160013211 | ARRAY SUBSTRATE AND MANUFACTURING AND REPAIRING METHOD THEREOF, DISPLAY DEVICE | 01-14-2016 |
20160013281 | THIN FILM TRANSISTOR, FABRICATION METHOD THEREOF, REPAIR METHOD THEREOF AND ARRAY SUBSTRATE | 01-14-2016 |
20160013323 | THIN FILM TRANSISTOR SUBSTRATE, DISPLAY APPARATUS, METHOD FOR MANUFACTURING THE THIN FILM TRANSISTOR SUBSTRATE, AND METHOD FOR MANUFACTURING THE DISPLAY APPARATUS | 01-14-2016 |
20160016185 | SLOT DIE COATING APPARATUS AND COATING METHOD USING THE SAME - A slot die coater planarizing an upper surface of an encapsulation layer and a coating method using the same. The slot die coater includes a slit nozzle configured to supply a coating solution. The slit nozzle includes a hole vertically penetrating a center portion thereof, a first bottom surface disposed at a movement direction side of the slit nozzle with reference to the hole, and a second bottom surface disposed at an opposite direction side of the movement direction of the slit nozzle with reference to the hole. A width of the first bottom surface is different from the width of the second bottom surface. | 01-21-2016 |
20160018684 | SUBSTRATE, DISPLAY DEVICE, AND METHOD FOR MANUFACTURING ALIGNMENT FILM - In the technical field of display, a substrate, a display device and a method for manufacturing an alignment film are disclosed. The present disclosure can solve the technical problem of image sticking of the liquid crystal display caused by the difference of feedthrough at different locations of the liquid crystal display device. The substrate of the present disclosure comprises a glass base and an alignment film formed on the glass base. The thickness of the alignment film measured along a lateral direction gradually becomes thinner from both ends of the alignment film to the center thereof, and/or the thickness of the alignment film measured along a longitudinal direction gradually becomes thinner from one end of the alignment film to the other end thereof. The present disclosure can be applied to display devices, such as liquid crystal television, liquid crystal display, mobile phone, and PC tablet, etc. | 01-21-2016 |
20160018703 | ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE - The present invention provides an array substrate, a manufacturing method thereof and a display device, relates to the field of liquid crystal display technology, and can solve the problem of low aperture ratio of the existing array substrate. The array substrate of the present invention comprises: a light filtering layer provided on a substrate a thin film transistor formed thereon, a planarization layer covering the light filtering layer, and a pixel electrode provided above the planarization layer, the array substrate further comprises: a third electrode layer connected to a drain of the thin film transistor and extending onto the light filtering layer; and a contacting via penetrating through the planarization layer and provided above a portion of the third electrode layer on the light filtering layer, the pixel electrode being connected to the third electrode layer through the contacting via. | 01-21-2016 |
20160020103 | BARRIER LAYER, METHOD FOR FABRICATING THE SAME, THIN FILM TRANSISTOR AND ARRAY SUBSTRATE - A barrier layer, a method for fabricating the same, a thin film transistor (TFT) and an array substrate are disclosed and related to display technology field. When the barrier layer ( | 01-21-2016 |
20160020223 | FLAT DISPLAY PANEL - A flat display panel includes a plurality of gate lines, a plurality of data lines, a plurality of tracking gate lines and a display area. The display area is disposed with pixel modules therein. Each pixel module includes a first pixel unit and a second pixel unit. The first pixel unit is configured to determine whether to receive a data transmitted on the first predetermined data line according to a voltage level of the first predetermined gate line. The second pixel unit is configured to determine whether to receive a voltage level of the second predetermined gate line according to a voltage level of the first predetermined gate line and determine whether to receive a data from the first pixel unit according to a voltage level received from the second predetermined gate line. | 01-21-2016 |
20160020226 | FLEXIBLE DISPLAY SUBSTRATE AND FLEXIBLE DISPLAY - The present invention discloses a flexible display substrate including a first flexible substrate and a plurality of display elements disposed on a first side of the first flexible substrate, each of the display elements including a thin film transistor. The flexible display substrate further includes a plurality of protrusions each provided on a second side of the first flexible substrate opposite to the first side and corresponding to a respective thin film transistor in a thickness direction of the first flexible substrate. A projection area of each protrusion, in the thickness direction of the first flexible substrate, on the second side of the first flexible substrate at least partially overlaps with a projection area of the thin film transistor corresponding to the protrusion, in the thickness direction of the first flexible substrate, on the second side of the first flexible substrate. In the present invention, it can avoid or alleviate the damage to the thin film transistor during bending the flexible display substrate. | 01-21-2016 |
20160020231 | METHOD FOR FORMING A THIN-FILM LAYER PATTERN, DISPLAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE - A method for forming a thin-film layer pattern, a display substrate and a manufacturing method thereof, and a display device are provided. The method for forming the thin-film layer pattern comprises: forming a first thin-film layer to be patterned on a substrate; forming a first overcoat (OC) layer on a surface of the first thin-film layer; forming a first overcoat layer pattern by beam melting; and removing the first thin-film layer not covered by the first overcoat layer pattern to form a first thin-film layer pattern. The method adopts beam melting process and hence can improve the accuracy and the resolution of the display substrate, improve the product quality and reduce the manufacturing cost. | 01-21-2016 |
20160026024 | POST SPACER, DISPLAY PANEL AND DISPLAY DEVICE - The present invention relates to the technical field of display, and in particular to a post spacer, a display panel and a display device. The post spacer includes a support post and a support pillow, wherein the support pillow is formed of a plurality of sub-pillows dispersedly arranged below the bottom of the support post. Since the post spacer is provided with the support pillows dispersedly arranged below the bottom of the support post, the bottom of the support post can be more uniformly stressed, and the support pillow can further provide a certain antiskid effect. Therefore, the post spacer of the present invention has a better supporting effect and can effectively avoid Mura faults. | 01-28-2016 |
20160026048 | ARRAY SUBSTRATE, DISPLAY PANEL AND DISPLAY DEVICE - An array substrate, a display panel and a display device are provided. The array substrate comprises pixel units. The pixel unit comprises four sub-pixel electrodes and at least one thin film transistor for controlling the four sub-pixel electrodes. Domain alignments of the four sub-pixel electrodes within the pixel unit differ from each other, and domain alignments of the four sub-pixel electrodes within the pixel unit have a mirror-symmetrical distribution in up and down directions and in left and right directions. | 01-28-2016 |
20160026049 | THIN-FILM TRANSISTOR SUBSTRATE AND DISPLAY PANEL HAVING THE SAME - A thin-film transistor substrate includes a base substrate, a gate line, a data line, a thin-film transistor, an organic insulating pattern and a common electrode. The base substrate includes a plurality of pixel areas. The gate line is disposed on the base substrate, and the gate line is extended in a first direction. The data line is disposed on the gate line, and the data line is extended in a second direction crossing the first direction. The thin-film transistor is connected to the gate line and the data line. The organic insulating pattern covers the data line and the thin-film transistor, and the organic insulating pattern includes an opening overlapping with the pixel areas. The common electrode is disposed on the base substrate. Thus, an organic insulating layer in a pixel area may be partially removed, so that a yellowish screen may be prevented, thereto improve a display quality. In addition, an organic insulating pattern may be formed on a data pattern, a coupling capacitance between the data pattern and a common electrode may be prevented or decreased, thereto prevent a data signal delay. | 01-28-2016 |
20160027765 | Display Device - A display device includes at least one semiconductor body, which has a semiconductor layer sequence, which has an active region provided for producing radiation and forms a plurality of pixels. The device also includes a driver circuit that has a plurality of switches, which are each provided for controlling at least one pixel. A first metallization layer and/or the second metallization layer are electroconductively connected to at least one of the pixels. The first metallization layer and the second metallization layer are arranged overlapping one another in such a manner that, in a plan view onto the display device, the driver circuit is covered with at least one of the metallization layers at every point which overlaps with one of the pixels or is arranged between two adjacent pixels. | 01-28-2016 |
20160027798 | ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE - The embodiments of the invention provide an array substrate, a method for manufacturing the same and a display device, relate to the field of display technology, and can reduce the color cast phenomenon of the display device, and improve the display effect. | 01-28-2016 |
20160027799 | ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE - An array substrate, a manufacturing method thereof and a display device are disclosed. The manufacturing method of an array substrate including: forming patterns including a thin film transistor, a gate wiring and a data wiring on the base substrate; the gate wiring and the data wiring are located in a PAD area; forming patterns of an insulating spacing layer, a first transparent electrode and a passivation layer, and forming a first via hole and a second via hole in areas corresponding to the gate wiring and the data wiring respectively to expose the gate wiring and the data wiring; a thickness of the insulating spacing layer in the PAD area on the array substrate is less than that of the insulating spacing layer in other areas. Therefore, the connection electrode can make better contact with the corresponding signal lines to avoid abnormal rubbing mura. | 01-28-2016 |
20160027802 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - A thin film transistor array panel includes: a substrate; a gate line and a common voltage line electrically separated from each other and elongated parallel with each other on the substrate; a gate insulating layer on the gate line and the common voltage line; a first passivation layer on the gate insulating layer; a common electrode on the first passivation layer; a second passivation layer on the common electrode; and a pixel electrode and a connection member on the second passivation layer and electrically separated from each other. The connection member is elongated in a horizontal direction parallel with the gate line and connects the common voltage line and the common electrode to each other. | 01-28-2016 |
20160027807 | ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, DISPLAY DEVICE, THIN-FILM TRANSISTOR (TFT) AND MANUFACTURING METHOD THEREOF - An array substrate and a manufacturing method thereof, a display device, a thin-film transistor (TFT) and a manufacturing method thereof. The array substrate comprises a base substrate and a pixel electrode and a TFT formed on the base substrate. The TFT includes an active layer and a source/drain pattern. The source/drain pattern is connected with the active layer. The pixel electrode is connected with the active layer. The array substrate can improve the aperture ratio of pixels and the chargeability of the TFT. | 01-28-2016 |
20160027816 | MASK SET, PIXEL UNIT AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY DEVICE - A mask set, a pixel unit and a manufacturing method thereof, an array substrate and a display device are provided to overcome the problem of low brightness of a display screen of a display device. In the pixel unit, the maximum size value of an overlapped area between an active layer and a drain electrode of a thin-film transistor (TFT) in the direction parallel to data line is less than the size value of one side, overlapped with the data line, in an overlapped area between the active layer and a source electrode; and the source electrode is the portion of the data line disposed in an overlapped area between the active layer and the data line. The pixel unit has the advantages of a larger opening area and higher light transmittance. Thus, the brightness of a display screen of the display device comprising the pixel units can be enhanced. Moreover, the problem of screen flicker can be avoided to some extent, and hence the display quality of images can be improved. | 01-28-2016 |
20160027819 | ARRAY SUBSTRATE AND METHOD FOR FABRICATING THE SAME - An array substrate and a method for fabricating the same are disclosed. The method includes steps of providing a substrate ( | 01-28-2016 |
20160027855 | ORGANIC LIGHT EMITTING DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME - A display panel and a method for manufacturing the display panel are discussed. The display panel includes a substrate; an active layer on the substrate; and a passivation layer on the active layer, wherein the active layer includes a channel part, a first electrode connection part and a second electrode connection part on opposite sides of the channel part in a first direction, and a first taper part and a second taper part on opposite sides of the channel part in a second direction crossing the first direction, and wherein a carrier concentration of each of the first taper part and the second taper part is different from those of the channel part, the first electrode connection part and the second electrode connection part. | 01-28-2016 |
20160027927 | THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF AND ARRAY SUBSTRATE - A thin film transistor, a manufacturing method thereof and an array substrate are provided. The thin film transistor comprises: a gate electrode ( | 01-28-2016 |
20160027930 | PIXEL ARRAY STRUCTURE AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY DEVICE - A pixel array structure and manufacturing method thereof, an array substrate and a display device are provided. The manufacturing method of the pixel array structure includes: forming a doped active layer over an active layer, the doped active layer having a portion with a larger thickness and a portion with a smaller thickness; forming a source/drain metal layer on the doped active layer and the active layer; conducting an etching process on the source/drain metal layer, so as to form a source electrode and a drain electrode, one of which partially covers the portion of the doped active layer with a larger thickness; conducting an etching process on the doped active layer and the active layer in a region between the source electrode and the drain electrode, so as to forming an optimized channel. With the manufacturing method, the on-state current of a channel of a thin film transistor can be raised. | 01-28-2016 |
20160033801 | ARRAY SUBSTRATE AND DISPLAY DEVICE - An array substrate and a display device are disclosed. The array substrate includes a display area and a gate driver circuit located outside of the display area. The display area is covered with an alignment film, and the gate driver circuit is also covered with the alignment film. With the array substrate, damage, caused by static electricity generated between conductive particles in a sealant and the gate driver circuit, to the gate driver circuit can be effectively reduced. | 02-04-2016 |
20160033802 | DISPLAY PANEL AND DISPLAY DEVICE - The present invention discloses a display panel and a display device. The display panel includes a first substrate, a second substrate disposed opposite the first substrate, and a pixel array. The pixel array is disposed on the first substrate and at least includes a pixel. The pixel has a first electrode layer. The first electrode layer has an auxiliary electrode portion and a driving electrode portion connecting to the auxiliary electrode portion. The driving electrode portion has a plurality of strip electrodes spaced from each other and arranged along a first direction. The area of the auxiliary electrode portion is denoted by A | 02-04-2016 |
20160033811 | LIQUID CRYSTAL DISPLAY AND METHOD FOR MANUFACTURING LIQUID CRYSTAL DISPLAY - A liquid crystal display includes a first substrate, which includes a first surface and a second surface opposite to the first surface, the first surface of the first substrate including a TFT array and a color filter layer formed thereon, the color filter layer including a plurality of color filter units arranged in an array and gaps formed between adjacent color filter units; and a second substrate, which includes a third surface and a fourth surface opposite to the third surface, the third surface and the first surface facing each other, the third surface including a black matrix layer formed thereon and including a plurality of black matrixes respectively corresponding to the gaps between the plurality of color filter units, the black matrix layer including a layer of a transparent conductive film coated thereon. The material of the black matrix layer is molybdenum. A method for manufacturing the liquid crystal display is also provided. The liquid crystal display has enhanced quality. | 02-04-2016 |
20160033826 | ARRAY SUBSTRATE AND LIQUID CRYSTAL DISPLAY DEVICE - The array substrate according to the present disclosure may include gate lines, data lines, pixel units defined by the gate lines and the data lines, and an alignment film formed above the pixel units. The gate lines may extend in a horizontal direction, and a rubbing direction of the alignment film may be angled relative to a longitudinal direction at a first non-zero angle β. | 02-04-2016 |
20160035573 | ARRAY SUBSTRATE, DISPLAY DEVICE, AND MANUFACTURING METHOD OF ARRAY SUBSTRATE - An array substrate is provided, wherein a pixel electrode has the same material as a source/drain and has a thickness less than that of the source/drain, or a common electrode has the same material as a gate and has a thickness less than that of the gate, which guarantees transmittance of the array substrate while reducing the process complexity. A display device and a manufacturing method of the array substrate are also provided. | 02-04-2016 |
20160035744 | ARRAY SUBSTRATE AND DISPLAY DEVICE - An array substrate and a display device, the array substrate comprises a fan-out area ( | 02-04-2016 |
20160035745 | DISPLAY SUBSTRATE AND FABRICATING METHOD THEREOF, DISPLAY PANEL, AND DISPLAY DEVICE - The present invention provides a display substrate and a fabricating method thereof, a display panel, and a display device. The display substrate comprises a base substrate, gate lines and data lines formed on the base substrate, and at least one pixel unit defined by the gate lines and the date lines, wherein, each pixel unit comprises a thin film transistor and a pixel electrode, and in each pixel unit, a drain electrode of the thin film transistor is electrically connected with the pixel electrode by at least part of an edge region of at least one side of the drain electrode. The technical solution of the present invention can increase the number of contact points and/or contact area for connecting the pixel electrode and the drain electrode, and thus display quality is improved. | 02-04-2016 |
20160035746 | ARRAY SUBSTRATE, METHOD FOR MANUFACTURING THE SAME AND DISPLAY DEVICE - Disclosed is an array substrate, a method of manufacturing the same, and a display device in use of the array substrate. The array substrate includes a gate electrode layer and a pixel electrode layer on a substrate. The gate electrode layer and the pixel electrode layer are stacked in contact with each other. The pixel electrode layer includes a first part and a second part separated from each other, the gate electrode layer includes a first part. The first part of the gate electrode layer and the first part of the pixel electrode layer are positioned as face-to-face. The gate electrode includes the first part of the gate electrode layer and the first part of the pixel electrode layer, and the pixel electrode includes the second part of the pixel electrode layer. The patterns of gate electrode layer and pixel electrode layer are manufactured with the same mask, which reduces the number of masks. | 02-04-2016 |
20160035747 | ARRAY SUBSTRATE AND FABRICATION METHOD THEREOF - An array substrate and a fabrication method thereof are provided. The array substrate comprises a plurality of wiring regions (S-S′) disposed in a non-display region, a plurality of signal lines ( | 02-04-2016 |
20160035748 | ARRAY SUBSTRATE, METHOD FOR MANUFACTURING THEREOF, AND DISPLAY DEVICE - Disclosed is an array substrate, a method for manufacturing the same, and a display device. The array substrate includes: a base substrate and a plurality of data lines disposed on the base substrate, The base substrate comprises a plurality of attaching areas in which the end of each data line attaches to the base substrate, and non-attaching areas between each two adjacent attaching areas, and a height layer is disposed between a passivation layer and the base substrate in the non-attaching area. By interposing a height layer between the passivation layer and the base substrate in the non-attaching area, the height difference between the passivation layer in the attaching area and the non-attaching area is decreased or disappeared, then the problem of fall-off of the passivation layer is solved, and the reliability of the product is increased. | 02-04-2016 |
20160035750 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - A thin film transistor array panel is provided. A thin film transistor is positioned on a substrate. A first passivation layer is positioned on the thin film transistor. A common electrode is positioned on the first passivation layer. A second passivation layer positioned on the common electrode. A pixel electrode is positioned on the second passivation layer. The pixel electrode is coupled to the thin film transistor through a first contact hole penetrating the first passivation layer, the common electrode, and the second passivation layer. A first part of the first contact hole formed in the common electrode is larger than a second part of the first contact hole formed in the second passivation layer. | 02-04-2016 |
20160035761 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A display device including a substrate including a display area and a non-display area, a common electrode line in the non-display area, and a protective layer coating at least a part of an end portion of the common electrode line. | 02-04-2016 |
20160035811 | ORGANIC LIGHT EMITTING DISPLAY DEVICE - Discussed is an organic light emitting display device that may include a first pixel on a substrate; a switching transistor with a first active layer provided inside the first pixel; a driving transistor with a second active layer provided inside the first pixel; a first light shielding layer overlapping the second active layer; and a second light shielding layer overlapping the first active layer, wherein the first light shielding layer is connected with the driving transistor, and the second light shielding layer is electrically insulated from the first light shielding layer. | 02-04-2016 |
20160041414 | ARRAY SUBSTRATE, LIQUID CRYSTAL DISPLAY PANEL AND DISPLAY DEVICE - An array substrate, a liquid crystal display panel and a display device are disclosed. The array substrate includes a base substrate, a plurality of pixel units disposed on the base substrate, a drive module providing each of the pixel units with a display signal; a photovoltaic battery component electrically connected to the drive module, which includes a plurality of photovoltaic sub-batteries, each of the photovoltaic sub-batteries including a first transparent electrode, a photovoltaic thin film and a second transparent electrode; the orthographic projection of the photovoltaic thin film on the base substrate lies within the light blocking region. Because the orthographic projection of the photovoltaic thin film on the base substrate lies within the light blocking region, aperture ratio of each pixel unit in the array substrate will not be affected. | 02-11-2016 |
20160041416 | DISPLAY SUBSTRATE, PREPARING METHOD THEREOF, AND DISPLAY DEVICE - A display substrate, a preparing method thereof, and a display device are disclosed; the display substrate comprises a display region, a non-display region, and a transparent support enhancement layer, the support enhancement layer is disposed at least in a region corresponding to the display region. The display substrate is not easy to be damaged by pressure, and can efficiently avoid a phenomenon of display defects of a display device. | 02-11-2016 |
20160041442 | ARRAY SUBSTRATE AND DISPLAY DEVICE - An array substrate and a display device are provided. The array substrate comprises: a plurality of gate lines arranged in parallel, a plurality of common electrode lines and a common electrode signal line which is disposed in a non-display region on the array substrate. Each of the gate lines corresponds to one common electrode line Each of the common electrode lines is electrically connected with the common electrode signal line through a corresponding signal line through-hole region. The signal line through-hole region is provided with at least one identification through hole, the signal line through-hole region is configured for indicating a number according to a position of the identification through hole. The array substrate can reduce the frame width of the display device. | 02-11-2016 |
20160042959 | THIN FILM TRANSISTOR, DISPLAY APPARATUS COMPRISING THE SAME, METHOD OF MANUFACTURING THIN FILM TRANSISTOR, AND METHOD OF MANUFACTURING DISPLAY APPARATUS - A thin film transistor includes a polysilicon layer on a substrate, which includes a first area between second and third areas. A polysilicon layer is formed on the substrate, and a source electrode and a drain electrode are formed on the polysilicon layer in the first and third areas. Each of the source electrode and the drain electrode includes a metal silicide layer adjacent the polysilicon layer. | 02-11-2016 |
20160043102 | Array Substrate and Method for Manufacturing the Same, and Display Device - The invention belongs to the field of display technology, and particularly provides an array substrate and a method for manufacturing the same, and a display device. The array substrate includes a base substrate, and a thin film transistor and at least one driving electrode provided on the base substrate, and the thin film transistor includes a gate, and a source and a drain provided in the same layer, wherein the gate, the source or the drain is formed with the same material as the at least one driving electrode, and thickness thereof is larger than that of the at least one driving electrode. Regarding the array substrate, the manufacturing procedure of the array substrate is effectively simplified, cost for mask plate and material is reduced, equipment investment is reduced, production cost is saved, productivity is improved, and competitiveness of the display device is increased, while the transmittance requirement is met. | 02-11-2016 |
20160043105 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - According to an exemplary embodiment, a display substrate includes a gate metal pattern comprising a gate electrode, an active pattern disposed on the gate pattern and a source metal pattern disposed on the active pattern. The source metal pattern includes a first lower pattern disposed on the active pattern, a second lower pattern disposed on the first lower pattern, a low-resistance metal pattern disposed on the second lower pattern, and an upper pattern disposed on the low-resistance metal pattern. The first lower pattern, the second lower pattern, and the upper pattern each include a material that is the same. | 02-11-2016 |
20160043107 | DISPLAY DEVICE AND MANUFACTURING AND TESTING METHODS THEREOF - A display device is disclosed which includes: gate lines and data lines crossing each other to define unit pixel regions in a display area; a pixel electrode in each unit pixel region; a data shorting bar in a non-display area in substantially parallel with the gate lines; a gate shorting bar in the non-display area in substantially parallel with the data lines; gate link lines electrically connecting the gate lines to the gate shorting bar; data link lines electrically connecting the data lines to the data shorting bar; and shield electrodes on at least one of the gate link lines and the data link lines, the shield electrodes including a conductive material that has a higher melting temperature than that of the at least one of the gate link lines and the data link lines. | 02-11-2016 |
20160043109 | FLEXIBLE DISPLAY DEVIE AND METHOD OF MANUFACTURING THE SAME - A flexible display device is discussed. The flexible display device includes a substrate having multiple signal lines arranged on the substrate; a transistor disposed on the substrate, the transistor including a gate electrode, a source electrode, and a drain electrode; and a second electrode disposed to correspond to a first electrode connected to the source electrode or the drain electrode of the transistor, wherein at least one of the multiple signal lines, the gate electrode, the source electrode, the drain electrode, and the second electrode is formed of a conductor having a metal nanowire structure and a polymer substance, the metal nonwire structure being disposed in the polymer substance. Also discussed is a method of manufacturing the flexible display device. | 02-11-2016 |
20160043188 | Selective Polysilicon Doping for Gate Induced Drain Leakage Improvement - Some embodiments of the present disclosure relate to deceasing off-state leakage current within a metal-oxide-semiconductor field-effect transistor (MOSFET). The MOSFET includes source and drain regions. The source and drain regions are separated by a channel region. A gate is arranged over the channel region. The gate has a first gate region adjacent to the source region and a second gate region adjacent to the drain region. The first gate region is selectively doped adjacent the source region. The second gate region is undoped or lightly-doped. The undoped or lightly-doped second gate region reduces the electric field between the gate and the drain region, and hence reduces a gate induced drain leakage (GIDL) current between the gate and drain region. The undoped or lightly-doped region of the gate can reduce the GIDL current within the MOSFET by about three orders of magnitude. Other embodiments are also disclosed. | 02-11-2016 |
20160048044 | DISPLAY PANEL AND MANUFACTURING METHOD THEROF - A display panel is provided. The display panel includes a TFT substrate and a photo-alignment layer. The TFT substrate includes a plurality of pixel units, wherein each pixel unit includes a plurality of sub-pixels. The photo-alignment layer is located on the pixel units, and has at least two different aligning directions corresponding to each sub-pixel. When light passes through each sub-pixel, the display panel shows a dark line pattern. The dark line pattern includes a major line and a minor line. The major line is located on the boundary between the two different aligning directions in the photo-alignment layer, and extends along a first direction, wherein the major line has a major line width. The minor line is connected to the major line, and extends along a second direction, wherein the minor line has a minor line width, and the major line width is greater than the minor line width. | 02-18-2016 |
20160049424 | ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, DISPLAY DEVICE - An array substrate, a manufacturing method of the array substrate and a display device including the array substrate are disclosed. The array substrate includes a substrate ( | 02-18-2016 |
20160049425 | ARRAY SUBSTRATE AND FABRICATION METHOD THEREOF, AND DISPLAY DEVICE - An array substrate and a fabrication method thereof, and a display device are provided. The array substrate comprises a gate line and a data line intersecting with each other. The data line and the gate line are formed in a same layer on a substrate, the data line is disconnected in a region of the gate line. A connection pattern is formed in the region of the gate line, the connection pattern is insulated from the gate line, and ends of the data line located on both sides of the gate line are electrically connected by the connection pattern. | 02-18-2016 |
20160049426 | ORGANIC LIGHTING EMITTING DISPLAY DEVICE INCLUDING LIGHT ABSORBING LAYER AND METHOD FOR MANUFACTURING SAME - Provided is a display device including: a plurality of pixels where a plurality of gate lines cross a plurality of data lines, respectively, each of the pixels including a thin film transistor (TFT) region and a display region; a TFT formed in the TFT region; light emitting elements formed in the display region for displaying images based on signals from the TFT; a metallic layer disposed in the TFT region for electrical connection of the TFT; and a light absorbing layer disposed on the metallic layer and configured to absorb at least part of light propagating toward the metallic layer. | 02-18-2016 |
20160049453 | OLED ARRAY SUBSTRATE, MANUFACTURING METHOD OF THE SAME, DISPLAY PANEL, AND DISPLAY DEVICE - The present invention provides an OLED array substrate, a manufacturing method of the same, a display panel, and a display device, and relates to the field of active matrix organic light-emitting diode (AMOLED) display technology. The present invention can solve the problem that turn-on and turn-off of a switching thin film transistor and grayscale control cannot be performed effectively because the switching thin film transistor and a driving thin film transistor are manufactured as thin film transistors having same performance parameters in an existing OLED array substrate. The OLED array substrate according to the present invention includes a switching thin film transistor and a driving thin film transistor, wherein, an S factor of the switching thin film transistor is less than that of the driving thin film transistor. | 02-18-2016 |
20160049479 | ARRAY SUBSTRATE STRUCTURE AND CONTACT STRUCTURE - A contact structure is provided, including a substrate, an active layer, an inter-layer dielectric (ILD) layer, a contact opening, and a conductive layer. The active layer is disposed over the substrate, and the insulating layer is disposed over the active layer; an inter-layer dielectric (ILD) layer over the insulating layer. The contact opening penetrates a portion of the ILD layer and the insulating layer to expose a portion of the active layer, wherein the contact opening includes a first recess portion, and the first recess portion is defined by a bottom surface of the ILD layer, a sidewall of the insulating layer and a top surface of the active layer. The conductive layer is in the contact opening and is electrically connected to the active layer. | 02-18-2016 |
20160054611 | DISPLAY SUBSTRATE, METHOD OF MANUFACTURING THE SAME, DISPLAY APPARATUS - The present invention discloses a display substrate, a method of manufacturing the same, and a display apparatus. The display substrate comprises a substrate body and a support spacer provided on the substrate body. In the display substrate, a contact surface between the support spacer and the substrate body is configured to be a non-flat surface. On one hand, the non-flat contact surface has a larger contact area than a flat contact surface and increases an adhesion force between the support spacer and the substrate body. Thereby, it can prevent the support spacer from being separated from the substrate body. On the other hand, the non-flat contact surface can hinder the movement of the support spacer relative to the substrate body in some directions. Thereby, it also can prevent the support spacer from being separated from the substrate body. | 02-25-2016 |
20160056176 | ARRAY SUBSTRATE AND DISPLAY DEVICE - An array substrate and a display including the array substrate, the array substrate includes a substrate ( | 02-25-2016 |
20160056177 | Array Substrate, Manufacturing Method Thereof and Display Device - The present invention provides array substrate, manufacturing method thereof, and display device, relating to manufacturing technology field of liquid crystal display. The array substrate of the present invention includes: a base substrate, on which a plurality of gate lines and a plurality of data lines are provided; shielding electrodes, which are provided above and electrically insulated from the data lines, and the shielding electrodes at least partially cover the data lines; first electrodes, which are provided in the same layer as the shielding electrodes and are electrically insulated from the shielding electrodes; second electrodes, which are provided above and electrically insulated from the first electrodes, wherein, the shielding electrodes are applied with a shielding voltage signal, the second electrodes are applied with a stable voltage signal, and no electric field or weak electric filed is formed between the shielding electrodes and the second electrodes. | 02-25-2016 |
20160056178 | Array Substrate and Method for Fabricating the Same, and Display Panel - The embodiments of the present invention provide an array substrate, a method for fabricating the array substrate and a display panel. The array substrate comprises a first region and a second region adjoining the first region, a plurality of signal lines are provided in the first region, and a plurality of lead wires connected with the plurality of signal lines are provided in the second region, the array substrate comprises at least one conductive member, each conductive member is connected in parallel with one lead wire, and an overall resistance of the conductive member and the lead wire connected in parallel with the conductive member is smaller than a resistance of the lead wire connected in parallel with the conductive member. | 02-25-2016 |
20160056182 | ARRAY SUBSTRATE OF DISPLAY PANEL - An array substrate of display panel comprises a substrate, a first and second transistors disposed on the substrate. The first and second transistors are electrically connected and share a semiconducting layer which comprises a first lateral portion, a turning portion and a bottom portion. The turning portion connects to the first lateral portion. The bottom portion connects to the turning portion. In one embodiment, a first outer edge extending line of the first lateral portion, a second outer edge extending line of the bottom portion and a third outer edge of the turning portion defines a first region. A first inner edge extending line of the first lateral portion, a second inner edge extending line of the bottom portion and a third inner edge of the turning portion defines a second region. The area of the first region is smaller than that of the second region. | 02-25-2016 |
20160056222 | ORGANIC EL DISPLAY DEVICE - A terminal is formed on a substrate. An anisotropic conductive film is disposed on the terminal. A flexible printed board is connected to the terminal via the anisotropic conductive film. At least one opening is formed in the terminal. An adhesion reinforcing portion as a projection is formed inside the opening. The adhesion reinforcing portion is formed of a material having higher adhesion to the anisotropic conductive film than a material constituting the surface of the terminal, and is adhered to the anisotropic conductive film. | 02-25-2016 |
20160056300 | THIN FILM TRANSISTOR AND FABRICATING METHOD THEREOF - A thin film transistor and a fabricating method thereof is provided. The thin film transistor includes a gate, a gate insulation layer, a semiconductor layer, a conductive pattern, a first electrode and a second electrode. The gate is disposed on a substrate. The gate insulation layer is disposed on the substrate to cover the gate. | 02-25-2016 |
20160062162 | THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY PANEL HAVING THE SAME - A thin film transistor substrate includes a base substrate and a thin film transistor. The base substrate includes a gate line and a data line. The thin film transistor is connected to the gate line and the data line. The thin film transistor includes a gate electrode, a semiconductor pattern and source, drain electrodes. The gate electrode is disposed on the base substrate. The semiconductor pattern overlaps with the gate electrode. The source, drain electrodes is spaced apart from each other. The source electrode includes a first source layer, a second source layer disposed on the first source layer and a first diffusion barrier disposed between the first source layer and second source layer. The drain electrode includes a first drain layer, a second drain layer disposed on the first drain layer and a second diffusion barrier disposed between the first drain layer and second drain layer. | 03-03-2016 |
20160062187 | TOUCH DISPLAY PANEL AND FABRICATION METHOD THEREOF, AND DISPLAY DEVICE - Embodiments of the invention provide an array substrate, a display panel and a display device. The array substrate comprises a pixel electrode layer. The pixel electrode layer comprises a first pixel electrode layer, a second pixel electrode layer and an insulation layer ( | 03-03-2016 |
20160062197 | PIXEL STRUCTURE - A pixel structure is provided. The pixel structure includes a scan line, a data line, an active device, a pixel electrode, and a common electrode. The active device is electrically connected to the scan line and the data line. The pixel electrode is electrically connected to the active device. The pixel electrode includes multiple first layer pixel electrode patterns and multiple second layer pixel electrode patterns. The common electrode includes a plurality of first layer common electrode patterns and a plurality of second layer common electrode patterns. A fringe electric field is between each first layer pixel electrode pattern and corresponding portion of second layer common electrode patterns, and between each first layer common electrode pattern and corresponding portion of second layer pixel electrode patterns. A horizontal electric field is between each second layer pixel electrode pattern and the adjacent portion of second layer common electrode patterns. | 03-03-2016 |
20160062198 | DISPLAY PANEL AND MANUFACTURING METHOD THEREOF - A display panel includes a substrate, a plurality of thin film transistors (TFTs), a plurality common electrodes, a plurality of common electrode lines, a plurality of coupling electrodes, and a plurality of pixel electrodes. Each of the TFTs comprises a gate, a source, a drain and a channel layer coupling the source to the drain. The gate, the common electrodes, and the common electrode lines are formed on a surface of the substrate and are separated from each other. Each of the coupling electrodes couples a corresponding common electrode to a corresponding common electrode line, and a space is defined between the corresponding common electrode and the corresponding common electrode line. | 03-03-2016 |
20160062199 | DISPLAY DEVICE, ARRAY SUBSTRATE, PIXEL STRUCTURE, AND MANUFACTURING METHOD THEREOF - A display device, an array substrate, a pixel structure and a manufacturing method thereof are disclosed, and the pixel structure comprises a thin film transistor ( | 03-03-2016 |
20160064412 | DISPLAY SUBSTRATE AND METHOD OF FABRICATING THE SAME - A display substrate including a lower common electrode disposed on a substrate, an insulating layer disposed on the lower common electrode, a gate pattern including a gate electrode disposed on the insulating layer and a common electrode contact part and a direct contact part spaced apart from the gate electrode, a gate insulating layer disposed on the gate pattern, a semiconductor layer disposed on the gate insulating layer, an etch stopping layer disposed on the gate insulating layer, source and drain electrodes disposed on the etch stopping layer, pixel part extending from the source and drain electrodes, a first conductive layer connected to the common electrode contact part, a second conductive layer connected to the direct contact part, and a passivation layer disposed on the source and drain electrodes, the first conductive layer, and the second conductive layer. | 03-03-2016 |
20160064414 | DISPLAY SUBSTRATE AND METHOD OF FABRICATING THE SAME - Disclosed are a display substrate, of which productivity is improved by decreasing five mask (M) processes utilized for fabricating the display substrate used in a liquid crystal display device in a horizontal field (Plane to Line Switching (PLS)) mode to four mask processes, and a method of fabricating the same. | 03-03-2016 |
20160064415 | ARRAY SUBSTRATE AND FABRICATING METHOD THEREOF, DISPLAY PANEL AND DISPLAY APPARATUS - An array substrate and a fabricating method thereof, a display panel and a display apparatus are disclosed. The array substrate includes a base substrate and a gate metal layer, a gate insulating layer, an active layer, a source-drain electrode metal layer, a passivation layer and a common electrode layer which are sequentially formed on the base substrate, as well as a pixel electrode layer which is positioned between the active layer and the source-drain electrode metal layer or between the source-drain electrode metal layer and the passivation layer; the gate metal layer including a gate electrode and a common electrode line. The pixel electrode layer or the source-drain electrode metal layer includes a connecting electrode, the connecting electrode being electrically connected with the common electrode line through a first via hole in the gate insulating layer, and the connecting electrode being electrically connected with the common electrode of the common electrode layer through a second via hole in the passivation layer. | 03-03-2016 |
20160064419 | ARRAY SUBSTRATE, METHOD OF MANUFACTURING THE SAME AND DISPLAY DEVICE - The present invention discloses an array substrate, a method of manufacturing the array substrate and a display device. Since the respective surfaces of the sources, the drains and the data lines are clad by the respective insulating films, in formation of the patterns of the pixel electrodes above the insulating films by using a patterning process, the insulating films can prevent the sources and the data lines provided under them from being corroded by an etching agent when an etching process is performed to form the patterns of the pixel electrodes, so as to avoid an influence on display quality of a display panel. Furthermore, since the insulating films are formed by curing the insulating material, instead of the photoresist, remained on the patterns of the sources, the drains and the data lines when forming the patterns of the sources, the drains and the data lines by using the insulating material (replacing the photoresist), formation of the insulating films will not increase the number of masks, and a step of peeling off the insulating material is omitted. Furthermore, the respective connecting portions electrically connects the respective drains with the respective pixel electrodes through the respective first via holes A located above the respective drains and passing through the respective insulating films, so that a normal display function of the display panel can be ensured. | 03-03-2016 |
20160064420 | DISPLAY SUBSTRATE AND METHOD OF FABRICATING THE SAME - A display substrate and its fabricating method have been disclosed. In a horizontal-field-mode liquid crystal display device, while maintaining five mask processes, additional direct contact has been formed to implement a narrow bezel. | 03-03-2016 |
20160064687 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - To realize a high-performance liquid crystal display device or light-emitting element using a plastic film. A CPU is formed over a first glass substrate and then, separated from the first substrate. A pixel portion having a light-emitting element is formed over a second glass substrate, and then, separated from the second substrate. The both are bonded to each other. Therefore, high integration can be achieved. Further, in this case, the separated layer including the CPU serves also as a sealing layer of the light-emitting element. | 03-03-2016 |
20160066408 | Pixel Design for Flexible Active Matrix Array - A flexible active matrix array is provided, made with a flexible substrate and an array of pixels overlying the substrate, where each pixel includes an active device and a light controlling device. The array also includes a plurality of parallel row lines overlying the substrate, with each row line formed in serpentine pattern with a plurality of partial-loops, to supply a first signal to a corresponding plurality of pixels. A plurality of parallel column lines overlies the substrate, orthogonal to the row lines. Each column line is formed in a serpentine pattern with a plurality of partial-loops, to supply a second signal to a corresponding plurality of pixels. Each pixel has a border, with each row line partial-loop formed along about 75% of a pixel border, and each column line partial-loop formed along about 75% of a pixel border. Also provided is a printed circuit board with serpentine traces. | 03-03-2016 |
20160071834 | ARRAY SUBSTRATE, DISPLAY DEVICE AND MANUFACTURING METHOD OF ARRAY SUBSTRATE - Embodiments of the invention provide an array substrate, a display device and a manufacturing method of the array substrate. The array substrate comprises a substrate ( | 03-10-2016 |
20160071887 | THIN FILM TRANSISTOR SUBSTRATE - A thin film transistor substrate is disclosed, which comprises: a substrate; and plural thin film transistor units disposed on the substrate and respectively comprising: an active layer disposed on the substrate and made of polysilicon; an insulating layer disposed on the active layer; and a source electrode and a drain electrode disposed on the insulating layer, wherein the insulating layer comprises a first region corresponding to the active layer and a second region corresponding to a region outside the active layer, and a roughness of the first region is larger than that of the second region. | 03-10-2016 |
20160071891 | THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF FABRICATING THE SAME - A thin film transistor substrate according to an embodiment includes a data line and a light barrier film to overlap an active layer of a thin film transistor, wherein the data line and the light barrier film are formed simultaneously, thereby reducing the cost of fabricating the thin film transistor substrate. | 03-10-2016 |
20160071915 | LIGHT EMITTING DEVICE - An object of the present invention is to provide a light emitting device in which variations in an emission spectrum depending on a viewing angle with respect to a side from which luminescence is extracted are decreased. A light emitting device according to the invention has a transistor, an insulating layer covering the transistor and a light emitting element provided in an opening of the insulating layer. The transistor and the light emitting element are electronically connected through a connecting portion. Additionally, the connecting portion is connected to the transistor through a contact hole penetrating the insulating layer. Note that the insulating layer may be a single layer or a multilayer in which a plurality of layers including different substances is laminated. | 03-10-2016 |
20160079202 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - A technique which improves the reliability in coupling between a bump electrode of a semiconductor chip and wiring of a mounting substrate, more particularly a technique which guarantees the flatness of a bump electrode even when wiring lies in a top wiring layer under the bump electrode, thereby improving the reliability in coupling between the bump electrode and the wiring formed on a glass substrate. Wiring, comprised of a power line or signal line, and a dummy pattern are formed in a top wiring layer beneath a non-overlap region of a bump electrode. The dummy pattern is located to fill the space between wirings to reduce irregularities caused by the wirings and space in the top wiring layer. A surface protection film formed to cover the top wiring layer is flattened by CMP. | 03-17-2016 |
20160079278 | METHOD FOR FABRICATING ARRAY SUBSTRATE, ARRAY SUBSTRATE AND DISPLAY DEVICE - A method for fabricating an array substrate, an array substrate and a display device are provided. The method for fabricating the array substrate includes: forming a spacer layer on the array substrate, the spacer layer is disposed under a planarized layer and corresponds to a location of a via hole in the planarized layer, wherein the planarized layer is formed of a hot melt material. | 03-17-2016 |
20160079281 | Flexible Display With Bent Edge Regions - An electronic device may have a flexible display with portions that are bent along a bend axis. The display may have display circuitry such as an array of display pixels in an active area. Contact pads may be formed in an inactive area of the display. Signal lines may couple the display pixels to the contact pads. The signal lines may overlap the bend axis in the inactive area of the display. During fabrication, an etch stop may be formed on the display that overlaps the bend axis. The etch stop may prevent over etching of dielectric such as a buffer layer on a polymer flexible display substrate. A layer of polymer that serves as a neutral stress plane adjustment layer may be formed over the signal lines in the inactive area of the display. Upon bending, the neutral stress plane adjustment layer helps prevent stress in the signal lines. | 03-17-2016 |
20160079283 | SEMICONDUCTOR DEVICE AND PEELING OFF METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The present invention provides a peeling off method without giving damage to the peeled off layer, and aims at being capable of peeling off not only a peeled off layer having a small area but also a peeled off layer having a large area over the entire surface at excellent yield ratio. The metal layer or nitride layer | 03-17-2016 |
20160079285 | DOUBLE THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A double thin film transistor includes a first semiconductor layer, a gate, a second semiconductor layer, a first insulating layer, a second insulating layer, a first source, a first drain, a second source and a second drain. The first semiconductor layer is disposed over a substrate. The gate is disposed over the first semiconductor layer. The second semiconductor layer is disposed over the gate, and the first and second semiconductor layers are the same conductive type. The first insulating layer is disposed between the first semiconductor layer and the gate. The second insulating layer is disposed between the gate and the second semiconductor layer. The first source and the first drain are disposed between the substrate and the second insulating layer. The second source and the second drain are disposed over the second insulating layer. | 03-17-2016 |
20160079333 | Display Device - Provided is a display device with high resolution, high display quality, or high aperture ratio. A pixel includes three subpixels and is electrically connected to two gate lines. One of the gate lines is electrically connected to a gate of a transistor included in each of the two subpixels, and the other gate line is electrically connected to a gate of a transistor included in the other subpixel. Display elements of the three subpixels are arranged in the same direction. Three pixel electrodes of the three subpixels are arranged in the same direction. | 03-17-2016 |
20160079550 | Active Device Substrate and Display Device - An active device substrate includes a flexible substrate, an inorganic de-bonding layer, and at least one active device. The flexible substrate has a first surface and a second surface opposite to the first surface, wherein the first surface is a flat surface. The inorganic de-bonding layer covers the first surface of the flexible substrate, and the material of the inorganic de-bonding layer is metal, metal oxide or combination thereof. The active device is disposed on or above the second surface of the flexible substrate. | 03-17-2016 |
20160085115 | LIQUID CRYSTAL DISPLAY DEVICE - A liquid crystal display panel for displaying images in an active area includes a first substrate having a pair of first short ends and first long ends. A second substrate faces the first substrate so as to hold a liquid crystal layer therebetween. A first polarization plate is arranged on an outside surface of the first substrate. The first polarization plate has a pair of second short ends longer than the first short ends, a pair of second long ends, and a first absorption axis. The angle a1 made by the first absorption axis with respect to the second short ends is smaller than an angle b1 made by the first absorption axis with respect to the second long ends. A second polarization plate is arranged on an outside surface of the second substrate and has a second absorption axis. | 03-24-2016 |
20160085124 | PIXEL STRUCTURE AND MANUFACTURING METHOD THEREOF, DISPLAY PANEL AND DISPLAY DEVICE - The present invention relates to a pixel structure and a manufacturing method thereof, a display panel and a display device. The pixel structure comprises a plurality of columns of pixels, a data line is provided between every two adjacent columns of pixels, each pixel comprises a pixel electrode and a thin film transistor comprising a gate, an active layer, a source and a drain, wherein, a gate protective layer is provided between the gates and the active layers, grooves, each of which is at least partially located between two adjacent columns of pixels, are provided in the gate protective layer, for opposite ends of the pixel electrodes of the two adjacent columns of pixels and the data line between the two adjacent columns of pixels, one is located in the groove, and the other is located on a part of the gate protective layer without the groove. | 03-24-2016 |
20160086911 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - A technique which improves the reliability in coupling between a bump electrode of a semiconductor chip and wiring of a mounting substrate, more particularly a technique which guarantees the flatness of a bump electrode even when wiring lies in a top wiring layer under the bump electrode, thereby improving the reliability in coupling between the bump electrode and the wiring formed on a glass substrate. Wiring, comprised of a power line or signal line, and a dummy pattern are formed in a top wiring layer beneath a non-overlap region of a bump electrode. The dummy pattern is located to fill the space between wirings to reduce irregularities caused by the wirings and space in the top wiring layer. A surface protection film formed to cover the top wiring layer is flattened by CMP. | 03-24-2016 |
20160086978 | DISPLAY - A display is disclosed. The display includes a display panel including pixel units in an image-displaying region. Each of the pixel units includes an AND gate and a pixel electrode electrically connected to an output terminal of the AND gate. | 03-24-2016 |
20160086982 | DISPLAY DEVICE - Disclosed is a display device and an electronic apparatus incorporating the display device. The display device includes a transistor and a planarization film over the transistor. The planarization film has an opening where an edge portion is rounded. The display device further includes a first electrode over the planarization film and an organic resin film over the first electrode. The organic resin film also has an opening where an edge portion is rounded. The organic resin film is located in the opening of the planarization film. The first electrode and the transistor are electrically connected to each other through a conductive film. The first electrode is in contact with a top surface of the conductive film. Over the first electrode, a light-emitting member and a second electrode are provided. | 03-24-2016 |
20160087020 | FLEXIBLE DISPLAY PANEL AND ELECTRO-OPTICAL APPARATUS - A first etching stop layer and an active layer are formed on an inner surface of a first glass substrate, and a second etching stop layer and a cover layer are formed on an inner surface of a second glass substrate. A display media is formed between the first glass substrate and the second glass substrate. A first passivation layer is formed on an outer surface of the second glass substrate. A first etching process is performed to expose the first etching stop layer. A first flexible substrate is formed on the exposed first etching stop layer, and a second passivation layer is formed on the first flexible substrate. The first passivsation layer is removed. A second etching process is performed to expose the second etching stop layer. A second flexible substrate is formed on the exposed second etching stop layer, and the second passivation layer is removed. | 03-24-2016 |
20160090291 | SEMICONDUCTOR DEVICE, DISPLAY MODULE, AND ELECTRONIC DEVICE - An object is to continuously apply voltage to a MEMS device using first to fifth or sixth transistors. One of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor. One of a source and a drain of the third transistor is electrically connected to one of a source and a drain of the fourth transistor. A gate of the first transistor is electrically connected to one of a source and a drain of the fifth transistor. A gate of the second transistor is electrically connected to the one of the source and the drain of the third transistor. A gate of the fourth transistor is electrically connected to the gate of the first transistor. The MEMS device is electrically connected to the one of the source and the drain of the first transistor. | 03-31-2016 |
20160091765 | ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE - An array substrate and a manufacturing method thereof and a display device are provided, and the array substrate comprises: a substrate ( | 03-31-2016 |
20160093596 | PANEL, DISPLAY APPARATUS INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME - Disclosed are a display apparatus, where a component disposition area facing a component disposed on a lower end of a non-display area of a panel is removed in a lower substrate configuring the panel, and a method of manufacturing the same. | 03-31-2016 |
20160093640 | DISPLAY DEVICE - Provided is a display device, including: a plurality of gate lines extending in a first direction; a plurality of source lines extending in a second direction; a gate driver configured to output a gate signal; and a plurality of gate lead-out lines extending in the second direction and being configured to transmit the gate signal to the plurality of gate lines, in which each of the plurality of gate lines is electrically connected to at least one of the plurality of gate lead-out lines, and at least one of the plurality of gate lines is electrically connected to at least two of the plurality of gate lead-out lines. | 03-31-2016 |
20160096725 | SEMICONDUCTOR DEVICE, DISPLAY MODULE, AND ELECTRONIC DEVICE - To reduce the amplitude voltage of control signals of a MEMS device. A semiconductor device includes a MEMS device, a first transistor, a second transistor whose source or drain is electrically connected to a source or a drain of the first transistor, a third transistor which sets the potential of a gate of the first transistor to a value at which the first transistor is turned on, a fourth transistor which sets the potential of the gate of the first transistor to a value at which the first transistor is turned off, and a fifth transistor which supplies a signal to a gate of the second transistor and a gate of the fourth transistor. | 04-07-2016 |
20160097947 | LIQUID CRYSTAL DISPLAY DEVICE - A liquid crystal display device includes: a TFT substrate having gate lines and data lines arranged thereon, the gate lines extending in a first direction and arranged in a second direction, the data lines extending in the second direction and arranged in the first direction; a counter substrate having a black matrix and a color filter; and liquid crystals put between the TFT substrate and the counter substrate. Columnar spacers are formed on the counter substrate. Pedestals are formed on portions of the TFT substrate, the portions corresponding to the columnar spacers. A convex portion and a concave portion are present at the top end of the columnar spacer. The pedestal is formed corresponding to the concave portion. The concave portion is opened at the ends thereof and connected to the lateral side of the columnar spacer. | 04-07-2016 |
20160099261 | Metal Wiring and Method of Manufacturing the Same, and Metal Wiring Substrate and Method of Manufacturing the Same - A metal wiring suitable for a substrate of large size is provided. The present invention is characterized in that at least one layer of conductive film is formed on an insulating surface, a resist pattern is formed on the conductive film, and the conductive film having the resist pattern is etched to form a metal wiring while controlling its taper angle α in accordance with the bias power density, the ICP power density, the temperature of lower electrode, the pressure, the total flow rate of etching gas, or the ratio of oxygen or chlorine in etching gas. The thus formed metal wiring has less fluctuation in width or length and can satisfactorily deal with an increase in size of substrate. | 04-07-2016 |
20160099263 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided are a display device and a method of manufacturing of the display device. The display device includes a substrate subjected to a primary preprocess; a conductor formed on the substrate and subjected to a secondary preprocess; and an insulating layer formed on the substrate and the conductor, in which the primary preprocess is performed for a surface energy of the first substrate higher than a first reference value and the secondary preprocess is performed for a surface energy of the conductor lower than a second reference value. | 04-07-2016 |
20160099327 | THIN FILM TRANSISTOR ARRAY PANEL - A thin film transistor array panel is capable of increasing an aperture ratio and decreasing parasitic capacitance between a gate electrode and a drain electrode by reducing an area of a thin film transistor. The thin film transistor array panel includes: a substrate; a gate line disposed on the substrate and including a gate electrode; a gate insulating layer on the gate line; a semiconductive island on the gate insulating layer; a circular drain electrode on the semiconductive island; and a source electrode disposed on the semiconductive island and shaped like a circular band bent in a direction from which the drain electrode is disposed. The gate electrode may include a circular portion that is overlapped by the drain electrode and a circular sector portion that is overlapped by the source electrode. | 04-07-2016 |
20160103350 | PIXEL STRUCTURE AND MANUFACTURING METHOD THEREFOR, ARRAY STRUCTURE, DISPLAY PANEL AND DISPLAY DEVICE - A pixel structure and manufacturing method therefor, an array structure, a display panel and a display device. And the pixel structure includes data lines; scan lines; pixel units formed by intersecting the data lines with the scan lines, where each pixel unit corresponds to one data line and one scan line; a TFT and a pixel electrode disposed in each of pixel units, where the pixel electrode includes slits, at least one of which includes at least one corner area at an end thereof; where the pixel electrode in a row is electrically connected to a TFT in a pixel unit, the pixel unit is disposed in the same row as and adjacently at one side of the pixel electrode, and at least one corner area of the pixel electrode extends toward the TFT electrically connected to the pixel electrode. | 04-14-2016 |
20160103372 | PIXEL STRUCTURE, MANUFACTURING METHOD OF PIXEL STRUCTURE, ARRAY SUBSTRATE, DISPLAY PANEL, AND DISPLAY DEVICE - The present disclosure provides a pixel structure, a manufacturing method of a pixel structure, an array substrate, a display panel, and a display device. The pixel structure includes a plurality of data lines, a plurality of scan lines, a plurality of pixel units and a pixel electrode in each pixel unit including a plurality of slits. An end of the slit includes at least one corner. The white pixel unit includes a first TFT and a second TFT. In a row of pixel units, a first TFT of each white pixel unit is electrically connected to a pixel electrode of the white pixel unit, and a second TFT of each white pixel unit is electrically connected to a pixel electrode of a pixel unit adjacent to the white pixel unit. The corner of the slit in the pixel electrode electrically connected with the second TFT extends toward the second TFT. | 04-14-2016 |
20160103376 | ELECTRO-OPTICAL DEVICE AND ELECTRONIC APPARATUS - In an electro-optical device, a first transistor includes a first gate electrode electrically connected to a scanning line via a first contact hole in an insulating film. A second transistor includes a second gate electrode electrically connected to the scanning line via a second contact hold in the insulating film. A planar size of the first contact hole is different from a planar size of the second contact hole. | 04-14-2016 |
20160104722 | DISPLAY DEVICE - A display device according to an exemplary embodiment of the present invention includes: a first insulation substrate; a thin film transistor disposed on the first insulation substrate; a pixel electrode coupled to the thin film transistor; a second insulation substrate facing the first insulation substrate; and a common electrode disposed on the second insulation substrate. The pixel electrode includes a first subpixel electrode that includes a first horizontal stem portion by which two different regions where arrangements of liquid crystal molecules are respectively different are divided, and a second subpixel electrode that includes a second horizontal stem portion by which two regions where the arrangements of the liquid crystal molecules are respectively different are divided and a cross-shaped stem portion by which four regions where the arrangements of the liquid crystal molecules are respectively different are divided. | 04-14-2016 |
20160104726 | THIN FILM TRANSISTOR SUBSTRATE, DISPLAY APPARATUS INCLUDING THE SAME, METHOD OF MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE, AND METHOD OF MANUFACTURING DISPLAY APPARATUS - Thin film transistor substrate includes: a substrate; a crystalline silicon layer on the substrate; and a capping layer covering the crystalline silicon layer and including a first portion having a first thickness and a second portion having a second thickness that is greater than the first thickness. | 04-14-2016 |
20160104727 | ARRAY SUBSTRATE AND MANUFACTURE METHOD THEREOF - Embodiments of the disclosure provide an array substrate and a manufacture method thereof. The array substrate comprises a display region and a non-display region, the display region comprises a transistor, the transistor comprises a source electrode, a drain electrode and an active layer, the source electrode and the drain electrode are provided on the active layer and are respectively provided at two ends of the active layer. The non-display region is provided with an alignment mark, the alignment mark is provided in a same layer as the active layer and is configured for aligning the source electrode and the drain electrode with the active layer in the case of re-fabricating the source electrode and the drain electrode. | 04-14-2016 |
20160109739 | MANUFACTURING METHOD OF TFT ARRAY SUBSTRATE, TFT ARRAY SUBSTRATE AND DISPLAY DEVICE - Embodiments of the disclosure provide a manufacturing method of a TFT array substrate, a TFT array substrate and a display device. The method comprises steps of: S1. forming a thin film transistor on a base substrate; S2. forming a passivation layer thin film on the base substrate after the step S1; S3. forming a passivation layer via hole and a light-shielding pattern on the base substrate after the step S2; and S4. forming a color filter layer and a pixel electrode on the base substrate after the step S3. The pixel electrode is electrically connected to a drain electrode of the thin film transistor through the passivation layer via hole, and the color filter layer is in correspondence with a position of the pixel electrode. | 04-21-2016 |
20160109763 | CURVED DISPLAY DEVICE - A display device according to an exemplary embodiment of the present inventive concept includes: a first insulation substrate; a thin film transistor disposed on the first insulation substrate; a pixel electrode coupled to the thin film transistor; a second insulation substrate facing the first insulation substrate; and a common electrode disposed on the second insulation substrate. The pixel electrode includes a first subpixel electrode including a first vertical stem portion and a first horizontal stem portion that is disposed perpendicular to the first vertical stem portion at an end of the first vertical stem portion, and a second subpixel electrode including a second vertical stem portion and a second horizontal stem portion that is disposed perpendicular to the second vertical stem portion at an end of the second vertical step portion. | 04-21-2016 |
20160109768 | DISPLAY DEVICE - A display device according to an exemplary embodiment includes: a first insulation substrate; a thin film transistor disposed on the first insulation substrate; and a pixel electrode coupled to the thin film transistor. The pixel electrode includes a first subpixel electrode that is divided into two regions configured to arrange liquid crystal molecules while including one first horizontal stem portion, and a second subpixel electrode that includes a plurality of second horizontal stem portions. | 04-21-2016 |
20160109770 | DISPLAY DEVICE INCLUDING SHORTING BAR - A display device includes a substrate including an array area in which an image is displayed and a pad area in which an image is not displayed, gate lines in the array area and elongated in a first direction on the substrate, gate lines pads in the pad area and respectively electrically connected to the gate lines, floating patterns disposed in the pad area, a first shorting bar in the pad area and with which electrostatic energy from the floating patterns is dissipated; and first shorting bar lines in the pad area and defined by first lines respectively connected to the floating patterns and second lines spaced apart from the first lines and connected to the first shorting bar, wherein ends of the second lines respectively face ends of the first lines. | 04-21-2016 |
20160109771 | LIQUID CRYSTAL DISPLAY DEVICE - in a liquid crystal display device, a common electrode is formed on an organic passivation film, an interlayer insulating film is formed on the common electrode, a pixel electrode with a slit is formed on the interlayer insulating film, and a through hole is formed in the organic passivation film and the interlayer insulating film, so that the pixel electrode is connected to a source electrode of a TFT through the through hole. Further, the taper angle around the upper base of the through hole is smaller than the taper angle around the lower base. Thus, the alignment film material can easily flow into the through hole when the diameter of the through hole is reduced to connect the pixel and source electrodes, preventing display defects such as uneven brightness due to the absence of the alignment film or due to the alignment film irregularity around the through hole. | 04-21-2016 |
20160111442 | ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE - An array substrate and a manufacturing method thereof and a display device are provided, wherein the array substrate includes: a substrate, and a gate electrode, a gate insulating layer, an active layer, a source electrode, a drain electrode and an insulating protection layer sequentially formed on the substrate, and the substrate is further provided with a pixel electrode and a common electrode, and a first leading wire hole connecting the pixel electrode with the drain electrode and a second leading wire hole connecting the common electrode with a common electrode line, the pixel electrode is provided on the substrate, and the gate electrode is directly provided on a transparent conductive layer which is provided at the same layer with the pixel electrode; the pixel electrode is connected with the drain electrode through a first metal connection layer provided in the first leading wire hole, and the first metal connection layer is provided at the same layer with the gate electrode. | 04-21-2016 |
20160111443 | GLASS PANEL AND METHOD FOR MANUFACTURING THE SAME - The field of manufacturing liquid crystal display panels, and in particular a modified glass panel is related. The glass panel comprises: a first metal layer used for forming scan lines and charge sharing lines, and a wiring metal layer used for forming connecting wires, wherein the connecting wires each have a via hole portion, and connect to the scan line and/or the charge sharing line via a via hole in the via hole portion. A corresponding manufacturing method is further provided. In this manner, a subsequently activated scan line can be used for activating a charge sharing line in a previous group. Hence, a reduced amount of chips on film will be used in the manufacturing and packaging procedures. | 04-21-2016 |
20160111444 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - An exemplary embodiment of the present inventive concept provides a display device including: an insulation substrate; a thin film transistor disposed on the substrate; a common electrode and a pixel electrode disposed on the thin film transistor to overlap each other with an insulating layer therebetween; a roof layer formed to be spaced apart from the pixel electrode with a microcavity therebetween; and a liquid crystal layer filling the microcavity. A lower portion of the roof layer includes a valley where a thickness of the roof layer is increased and a peak where the thickness of the roof layer is reduced. | 04-21-2016 |
20160111451 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE PRODUCTION SYSTEM - A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film. | 04-21-2016 |
20160111453 | THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY - Disclosed is a TFT substrate, including a substrate and a gate electrode thereon. A gate insulation layer over the substrate covers the gate electrode. An active layer is disposed over the gate insulation layer. An etch stop layer is disposed over the active layer and the gate insulation layer. A first opening penetrates the etch stop layer to expose a first part of the active layer. A source electrode over the etch stop layer is electrically connected to the first part of the active layer through the first opening. A first inorganic insulation layer is disposed over the source electrode and the etch stop layer. A second opening penetrates the first inorganic insulation layer and the etch stop layer to expose a second part of the active layer. | 04-21-2016 |
20160111455 | ARRAY SUBSTRATE AND THE METHOD FOR MAKING THE SAME, AND DISPLAY DEVICE - An array substrate and the method for making the same, and a display device are provided. The method includes step 1, forming a pattern comprising a gate electrode and a gate line on a substrate, and providing photoresist at a position reserved for a first via hole above the gate line in a non-display area; step 2, forming a pattern of functional layers of a thin film transistor (TFT) and a data line on the substrate after the above step; step 3, forming a pattern comprising a first pixel electrode on the substrate after the above steps, and then forming a passivation layer; step 4, removing the photoresist provided above the position reserved for the first via hole and film layer thereabove from the substrate after the above steps, so as to form the first via hole. | 04-21-2016 |
20160111484 | ORGANIC LIGHT-EMITTING DIODE DISPLAY AND METHOD OF MANUFACTURING THE SAME - An OLED display and a method of manufacturing the same are disclosed. In one aspect, the display device includes a plurality of pixels, wherein each of the pixels includes a plurality of wires including a first wire extending in a first direction and a second wire extending in a second direction crossing the first direction, the second wire having top and bottom portions opposing each other. The pixels also include a plurality of switching TFTs electrically connected to the wires, a driving TFT configured to supply a driving current, a storage capacitor electrically connected to the wires and the driving TFT, and a connecting wire electrically connecting the driving TFT to a selected one of the switching TFTs, wherein the connecting wire has top and bottom portions opposing each other, and wherein at least the top portions of the connecting wire and the second wire are formed on different layers. | 04-21-2016 |
20160111682 | DISPLAY DEVICE - A display device comprises a substrate comprising a first surface and a second surface facing away from the first surface; a protection layer disposed over and bonded to the first surface of the substrate; and a plurality of pixels formed over the second surface of the substrate. The protection layer comprises a concave-convex pattern. | 04-21-2016 |
20160116771 | LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A method of manufacturing a liquid crystal display device including a TFT substrate with display and peripheral regions. The display region has pixels each having a pixel electrode and a TFT. A counter substrate opposes the TFT substrate and has a color filter formed at a position corresponding to a position at which the pixel electrode is formed above the TFT substrate. The method includes coating, outside of the display region of the TFT substrate, a second alignment film in the shape of a frame, and coating, in the display region, a first alignment film that dries more slowly than the second alignment film. The first and second alignment films are in contact, and the second alignment film is thicker than the first alignment film. | 04-28-2016 |
20160116773 | LIQUID CRYSTAL DISPLAY DEVICE - An IPS system liquid crystal display device is provided to prevent reliability for a seal portion from lowering, which is caused by the fact that an overcoat film at a portion where an alignment film is not present is deteriorated by ultraviolet light during optical alignment process. An alignment film | 04-28-2016 |
20160116812 | LIQUID CRYSTAL DISPLAY DEVICE COMPRISING A TRANSPARENT PIXEL ELECTRODE CONNECTED WITH A THIN FILM TRANSISTOR THROUGH A CONTACT HOLE AND A TRANSPARENT COUNTER ELECTRODE HAVING MULTIPLE SLITS - To form a sufficiently large storage capacitor, a liquid crystal display device includes a liquid crystal display panel having a first substrate, a second substrate, and a liquid crystal held between the first substrate and the second substrate, the liquid crystal display panel having multiple pixels arranged in matrix. The first substrate has, in a transmissive display area provided in each of the pixels, a laminated structure containing a first transparent electrode, a first insulating film, a second transparent electrode, a second insulating film, and a third transparent electrode which are laminated in this order. The first transparent electrode and the second transparent electrode are electrically insulated from each other and together form a first storage capacitor through the first insulating film, and the second transparent electrode and the third transparent electrode are electrically insulated from each other and together form a second storage capacitor through the second insulating film. | 04-28-2016 |
20160118330 | REPAIRING LINE STRUCTURE AND CIRCUIT REPAIRING METHOD USING SAME - The present invention discloses a repairing line structure for repairing a breakage at a crossing point of electric wires extending along different directions on a thin film transistor panel. The repairing line structure includes a repair line extending from a same side of the electric wire where the breakage is defined and connecting opposite ends of the breakage and an amorphous silicon protection pattern. The repairing line traverses the other electric wire crossing with the electric wire where the breakage is defined. The amorphous silicon protection pattern is located between the repairing line and the electric wire traversed by the repairing line. | 04-28-2016 |
20160118408 | ARRAY SUBSTRATE AND DISPLAY DEVICE - Disclosed is an array substrate including gate lines ( | 04-28-2016 |
20160118411 | TFT ARRAY SUBSTRATE, DISPLAY PANEL, AND TFT STRUCTURE - A TFT array substrate includes a plurality of scan lines, a plurality of date lines, a plurality of pixels, a first TFT, and a second TFT. The number of scan lines includes a first scan line. The date lines are insulated with the scan lines include a first date line and a second date line. The first date line is insulated and at least partly covering the second date line. The pixels are defined by two adjacent scan lines and two adjacent date lines. The first TFT is configured to drive a first pixel at the first side of the first scan line and being coupled with the first scan line and the first date line. The second TFT is configured to drive a second pixel at the second side of the first scan line and being coupled with the first scan line and the second date line. | 04-28-2016 |
20160118413 | THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY APPARATUS - A thin film transistor (TFT) substrate comprises a substrate, a plurality of pixel electrodes, a gate layer, an active layer, a first source layer and a second source layer, and a drain layer. The pixel electrodes are disposed on the substrate. The gate layer is disposed on the substrate. The active layer is disposed corresponding to the gate layer. The first source layer and the second source layer contact the active layer respectively. The drain layer contacts the active layer and is electrically coupled to one of the pixel electrodes. The gate layer, the active layer, the first source layer and the drain layer constitute a first transistor. The gate layer, the active layer, the second source layer and the drain layer constitute a second transistor. When the first and second transistors are disabled, the first and second source layers are electrically isolated from each other. | 04-28-2016 |
20160118419 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - A thin film transistor array panel includes a substrate, a gate line and a gate pad disposed on the substrate, a gate insulating layer disposed on the gate line and the gate pad, a data line and a data pad disposed on the gate insulating layer, an organic layer disposed on the data line and the data pad, and a connecting member disposed on one of the gate pad and the data pad, in which the organic layer includes a first portion overlapping the connecting member and a second portion not overlapping the connecting member, and a height of the first portion of the organic layer is greater than a height of the second portion of the organic layer. | 04-28-2016 |
20160118447 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display apparatus includes a gate electrode of a thin-film transistor (TFT) and a gate wiring electrically connected to the gate electrode and formed on different layers with an insulating layer disposed between the gate electrode and the gate wiring. | 04-28-2016 |
20160124279 | LIQUID CRYSTAL ARRAY SUBSTRATE, ELECTRONIC DEVICE, AND METHOD FOR TESTING LIQUID CRYSTAL ARRAY SUBSTRATE - A liquid crystal (LC) array substrate includes a number of pixel regions, each pixel region includes a main region, a sub-region, and an adjustment thin film transistor (TFT), the adjustment TFT adjusts a ratio of voltage of the main region and the sub-region to achieve a LCS design. The main region comprises a first TFT and a main region array common electrode lead wire, the sub-region comprises a second TFT and a sub-region array common electrode lead wire, and the main region array common electrode lead wire and the sub-region array common electrode lead wire are electrically isolated. The main region array common electrode lead wire of all pixel regions of the LC array substrate are connected to a main region conductive pad, the sub-region array common electrode lead wire of all pixel regions of the LC array substrate are connected to a sub-region conductive pad. | 05-05-2016 |
20160126255 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A display substrate includes a gate metal pattern including a gate line on a base substrate and extending in a first direction, and a gate electrode electrically connected with the gate line, a data metal pattern on the gate metal pattern and including a data line extending in a second direction crossing the first direction, a source electrode electrically connected with the gate line and a drain electrode spaced apart from the source electrode, a first electrode pattern on the data metal pattern, a low-resistance electrode pattern on the first electrode pattern and entirely overlapping with the gate metal pattern and the data metal pattern and a second electrode pattern overlapping with the first electrode pattern. | 05-05-2016 |
20160126256 | THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A TFT substrate including a base substrate that includes a plurality of pixel areas; a gate line on the base substrate and extending in a first direction; a data line on the gate line and extending in a second direction; a TFT connected to the gate line and the data line, the TFT including a gate electrode, a semiconductor pattern, and source and drain electrodes, the semiconductor pattern overlapping the gate electrode, the source electrode and the drain electrode overlapping the semiconductor pattern, and the drain electrode being spaced apart from the source electrode; an inorganic insulating pattern covering the data line, the inorganic insulating pattern including an opening aligned with the pixel areas; a shielding electrode overlapping the data line, the shielding electrode on the inorganic insulating pattern; and a pixel electrode on the pixel areas, the pixel electrode being electrically connected to the drain electrode through a first contact hole. | 05-05-2016 |
20160126257 | ARRAY SUBSTRATE, DISPLAY PANEL AND DISPLAY DEVICE - An array substrate includes a substrate, a plurality of gate lines and a plurality of data lines intersecting each other and being insulating from each other, and a plurality of pixel units arranged in an array and surrounded by the intersecting gate lines and data lines. The array substrate also includes at least one temperature measuring unit and at least one gate signal start control line. The temperature measuring unit includes at least one thin film transistor. The array substrate further includes a signal input line, a signal output line, and resistor is arranged on the signal input line. The temperature measuring unit includes a first terminal electrically connected with the signal input line and a second terminal electrically connected with the signal output line. | 05-05-2016 |
20160126258 | LOW TEMPERATURE POLY-SILICON ARRAY SUBSTRATE AND FORMING METHOD THEREOF - A low temperature poly-silicon (LTPS) array substrate is disclosed. The array substrate includes a first substrate and a stack structure on the first substrate, where the stack structure includes a first conductive layer, and a second conductive layer. The first and second conductive layers are insulated from each other. The array substrate also includes a polysilicon layer above the first and second conductive layers, an interlayer insulating layer above the polysilicon layer, and a source-drain metal layer on the interlayer insulating layer. The source-drain metal layer includes a source and a drain, the source and the drain are electrically connected with the polysilicon layer through a first via, and one of the source and the drain is electrically connected with the first conductive layer through a second via. | 05-05-2016 |
20160126260 | LIQUID CRYSTAL DISPLAY - A liquid crystal display including a plurality of pixels that display an image, each pixel includes a thin film transistor that includes a gate electrode, a source electrode having a bar-shape and partially overlapping the gate electrode, and a drain electrode facing the source electrode at a location corresponding to the gate electrode, the drain electrode includes a first end portion having a C-shape that surrounds a distal end of the bar-shaped source electrode. This design eliminates an overlap between a data line and the gate electrode, which eliminates an overlap between the data line and the channel area of a semiconductor layer, which reduces a parasitic capacitor of the data line, resulting in less current to drive the data line, resulting in reduced power consumption of the display. | 05-05-2016 |
20160126261 | ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME, AND DISPLAY DEVICE - The present invention provides an array substrate, a method of fabricating the array substrate, and a display device. The method of fabricating the array substrate of the present invention comprises steps of: sequentially forming a first transparent conductive film and a source-drain metal film on a substrate; forming a source-drain metal pattern by performing a patterning process on the source-drain metal film; forming a pattern comprising a pixel electrode and a compensation structure that is provided below the source-drain metal pattern by performing a patterning process on the first transparent conductive film. | 05-05-2016 |
20160126421 | COMPOSITE ELECTRODE, ARRAY SUBSTRATE AND DISPLAY DEVICE - A composite electrode comprises at least one graphene layer and at least one doping layer, and two adjacent layers are not both the doping layer; wherein the doping layer is an aluminum chloride layer or a zinc iodide layer. It is used for manufacture of a display device. | 05-05-2016 |
20160126494 | TRANSPARENT DISPLAY SUBSTRATES, TRANSPARENT DISPLAY DEVICES AND METHODS OF MANUFACTURING TRANSPARENT DISPLAY DEVICES - A transparent display substrate, a transparent display device, and a method of manufacturing a transparent display device, the substrate including a base substrate including a pixel area and a transmission area; a pixel circuit on the pixel area of the base substrate; an insulation layer covering the pixel circuit on the base substrate; a pixel electrode selectively disposed on the pixel area of the base substrate, the pixel electrode being electrically connected to the pixel circuit at least partially through the insulation layer; and a transmitting layer structure selectively disposed on the transmission area of the base substrate, the transmitting layer structure including at least an inorganic material, the inorganic material consisting essentially of silicon oxynitride. | 05-05-2016 |
20160131929 | DISPLAY PANELS - A display panel is provided. The display panel includes a first substrate having a display area and a non-display area. A sealant is disposed on the first substrate and on the non-display area. A planarization layer is disposed on the first substrate. The planarization layer has a first trench formed therein on the non-display area. The first trench has a bottom and a side adjacent to the bottom. The bottom has a roughness that is greater than the roughness of the side. | 05-12-2016 |
20160132162 | ARRAY SUBSTRATE, FABRICATING METHOD THEREOF AND DISPLAY DEVICE - An array substrate, a fabricating method thereof and a display device are provided, and the array substrate comprises: a plurality of gate lines ( | 05-12-2016 |
20160133473 | LTPS TFT Having Dual Gate Structure and Method for Forming LTPS TFT - The present invention proposes a low temperature poly-silicon thin-film transistor having a dual-gate structure and a method for forming the low temperature poly-silicon thin-film transistor. The low temperature poly-silicon thin-film transistor includes: a substrate, one or more patterned amorphous silicon (a-Si) layers, disposed in a barrier layer on the substrate, for forming a bottom gate, an NMOS disposed on the barrier layer, and a PMOS disposed on the barrier layer. The NMOS comprises a patterned gate electrode (GE) layer as a top gate, and the patterned GE layer and the bottom gate formed by the one or more patterned a-Si layers form a dual-gate structure. The present invention proposes a low temperature poly-silicon thin-film transistor with a more stabilized I-V characteristic, better driving ability, low power consumption, and higher production yield. | 05-12-2016 |
20160133646 | ARRAY SUBSTRATE, DISPLAY DEVICE AND REPAIR METHOD OF THE ARRAY SUBSTRATE - An array substrate, a display device and a repair method of the array substrate. The array substrate may include: a base ( | 05-12-2016 |
20160133647 | DISPLAY DEVICE - In view of the problem that a reduced thickness of an EL film causes a short circuit between an anode and a cathode and malfunction of a transistor, the invention provides a display device that has a light emitting element including an electrode and an electroluminescent layer, a wire electrically connected to the electrode of the light emitting element, a transistor provided with an active layer including a source, a drain and a channel forming region, and a power supply line electrically connected to one of the source and the drain of the transistor, wherein the wire is electrically connected to the other of the source and the drain of the transistor, and the width of a part of the electrode in the vicinity of a portion where the electrode is electrically connected to the wire is smaller than that of the electrode in the other portion. | 05-12-2016 |
20160133652 | ARRAY SUBSTRATE AND LIQUID CRYSTAL DISPLAY PANEL - An array substrate and a liquid crystal display panel including the array substrate are provided. The array substrate includes: multiple pixel units; at least one additional functional area located in each row of a matrix formed by the multiple pixel units, where the additional functional area is provided with a gate signal detecting transistor; and a detection signal output line and a preset signal line connected with each other. By detecting whether a drive signal on a gate line is normal using the gate signal detecting transistor, the problem of manually detecting one-by one whether a signal on a gate line is normal can be avoided, thereby improving the detection efficiency and accuracy. | 05-12-2016 |
20160133682 | ORGANIC LIGHT-EMITTING DIODE DISPLAY HAVING HIGH APERTURE RATIO AND METHOD FOR MANUFACTURING THE SAME - An organic light-emitting diode display includes a substrate in which an emission area and a non-emission area are defined; a thin film transistor disposed in the non-emission area on the substrate; passivation layer disposed on the thin film transistor; a first storage capacitor electrode and a second storage capacitor electrode superposed thereon, having the passivation layer interposed therebetween, in the emission area; an overcoat layer disposed on the second storage capacitor electrode; and an anode disposed on the overcoat layer, coming into contact with one side of the second storage capacitor electrode through an overcoat layer contact hole penetrating the overcoat layer and, coming into contact with part of the thin film transistor through a passivation layer contact hole disposed in the overcoat layer contact hole and penetrating the passivation layer. | 05-12-2016 |
20160133755 | LOW TEMPERATURE POLY-SILICON THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY DEVICE - A low temperature poly-silicon thin film transistor and its manufacturing method, an array substrate and a display device are provided. The method comprises: forming a poly-silicon film on a base substrate ( | 05-12-2016 |
20160139444 | DISPLAY PANEL, MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE - A display panel includes: an array substrate, which includes a gate line and a data line crossing to each other, a thin film transistor disposed in a crossing region of the gate line and the data line; a color filter substrate, cell-assembled with the array substrate; and a spacer, located between the array substrate and the color filter substrate, wherein a contact face between the spacer and the array substrate is positioned in a region of the gate line and/or a region of the data line except a region where the thin film transistor is located. A manufacturing method of a display panel and a display device also are provided. | 05-19-2016 |
20160141305 | ARRAY SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE - An array substrate comprises a TFT, a data line, a gate line and a passivation layer covering the TFT, the data line and the gate line. The array substrate further includes a first conductive structure and a second conductive structure connected with the first conductive structure, the first conductive structure is disposed on the passivation layer and above the TFT, and the second conductive structure is disposed on the passivation layer and above the data line and/or gate line. A method for manufacturing the array substrate and a display device having such an array substrate are also provided. | 05-19-2016 |
20160141306 | METHOD FOR MANUFACTURING ARRAY SUBSTRATE, ARRAY SUBSTRATE THEREOR AND DISPLAY DEVICE - The present disclosure provides a method for manufacturing an array substrate, an array substrate and a display device. The method includes: forming a gate line, a gate electrode and an insulating layer which covers the gate line and the gate electrode on a first surface of a substrate; forming a semiconductive film on the insulating layer; patterning the semiconductive film using the gate electrode and the gate line as a mask, so as to form an source semiconductive layer at a region where the gate line and the gate electrode are located; and manufacturing a target semiconductive layer using the source semiconductive layer. | 05-19-2016 |
20160141307 | ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - A method of manufacturing an array substrate includes applying a first color filter and a second color filter over a first and second pixel regions respectively and the color filters have an overlapped portion in wiring region; and forming a contact hole, which partially exposes the drain electrode therethrough, by etching at least one of the overlapping first and the second color filters, and the forming the contact hole includes selectively etching an upper part of the overlapped portion during etching a photoresist layer covering the overlapped portion, the overlapped portion of first and second color filters is etched without requiring an additional masking process, preventing a decrease of liquid crystal margin due to large height difference of the overlapped color filters, preventing misalignment of color filters and mixing of colors. | 05-19-2016 |
20160141309 | DISPLAY DEVICE AND ELECTRONIC DEVICE - An object of the invention is to provide a circuit technique which enables reduction in power consumption and high definition of a display device. A switch controlled by a start signal is provided to a gate electrode of a transistor, which is connected to a gate electrode of a bootstrap transistor. When the start signal is input, a potential is supplied to the gate electrode of the transistor through the switch, and the transistor is turned off. The transistor is turned off, so that leakage of a charge from the gate electrode of the bootstrap transistor can be prevented. Accordingly, time for storing a charge in the gate electrode of the bootstrap transistor can be shortened, and high-speed operation can be performed. | 05-19-2016 |
20160141311 | THIN FILM TRANSISTOR AND A MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND A MANUFACTURING METHOD THEREOF, DISPLAY DEVICE - A thin film transistor and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display device are disclosed. The manufacturing method of the array substrate includes depositing an amorphous silicon thin film layer on a base substrate; performing a patterning process on the amorphous silicon thin film layer, so as to form a pattern with multiple small pores at a surface of the amorphous silicon thin film layer. With this method, when a laser annealing treatment of amorphous silicon is performed, the molten silicon after melting fills the space of small pores at a surface of the amorphous silicon thin film layer firstly, thereby avoiding forming a protruded grain boundary that is produced because the excess volume of polysilicon is squeezed. | 05-19-2016 |
20160141314 | THIN FILM TRANSISTOR ARRAY SUBSTRATE, MANUFACTURING METHOD AND DISPLAY DEVICE - A thin film transistor array substrate, a manufacturing method thereof and a display device are provided. The array substrate includes a substrate and a plurality of pixel units arranged on the substrate, each of which includes a display zone and a non-display zone including a thin film transistor and a black matrix that are provided on the substrate, wherein the black matrix is disposed between the substrate and the thin film transistor. | 05-19-2016 |
20160141341 | DISPLAY DEVICE - A sub-pixel is provided in a display area of an organic EL display device. A bank layer surrounds an outer periphery of the sub-pixel. A contact area is positioned in the display area and is adjacent to the sub-pixel through the bank layer. A pixel electrode is provided in the sub-pixel. A common electrode is disposed across the sub-pixel and the contact area. At least a part of an auxiliary conductive layer is positioned in the contact area. A contact hole is provided in the contact area and electrically connects the common electrode and the auxiliary conductive layer. | 05-19-2016 |
20160141342 | ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND DISPLAY APPARATUS - An array substrate and a manufacturing method thereof, and a display apparatus are provided. The array substrate may include a base substrate, a scan line, a data line arranged to cross each other on the base substrate, pixel units arranged in a matrix and defined by the scan lines and data lines, wherein a thin film transistor, a pixel electrode and a light emitting structure are disposed in the pixel unit, the pixel electrode is disposed above the layer where the thin film transistor is located, the region covered by the pixel electrode includes a region over the thin film transistor; the light emitting structure is disposed above the layer where the thin film transistor is located, and its covered region corresponds to the region covered by the pixel electrode. | 05-19-2016 |
20160141425 | THIN FILM TRANSISTOR ASSEMBLY, ARRAY SUBSTRATE METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE - The present disclosure discloses a thin film transistor assembly, an array substrate and a method of manufacturing the same, and a display device including the array substrate. The array substrate includes a substrate; a plurality of thin film transistors formed on the substrate; and a plurality of light shielding layers, each of the light shielding layers being arranged between a source electrode and a drain electrode of the thin film transistor and configured to block light from the exterior from illuminating an active layer of the thin film transistor. The light shielding layer and the source electrode and the drain electrode of the thin film transistor are formed in the same layer on the substrate. As the light shielding layer, the source electrode and the drain electrode of the thin film transistor and a data line may be formed on the substrate by using the same material layer through a single patterning process, times of performing patterning processes and the number of masks used may be reduced and thus manufacturing process and cost of the array substrate may be decreased. | 05-19-2016 |
20160147122 | DISPLAY DEVICE - A display device may include a transistor, which includes a first transistor electrode and a second transistor electrode. The display device may further include a pixel electrode, which is electrically connected to the second transistor electrode. The display device may further include a data line, which is electrically connected to the first transistor electrode, wherein the data line includes a bent structure. The display device may further include a light blocking member, which includes a light blocking portion, wherein the light blocking portion extends perpendicular to a section of the data line, and wherein the light blocking portion overlaps both the transistor and the bent structure without overlapping the section of the data line in a direction perpendicular to the light blocking member. | 05-26-2016 |
20160147123 | ARRAY SUBSTRATE AND DISPLAY DEVICE - An array substrate and a display device are provided. A common electrode line with the same extending direction as a gate line is disposed at one end near a thin film transistor, and forms a storage capacitor with a drain electrode of the thin film transistor. As compared with the case in the prior art that a common electrode line and a thin film transistor in an array substrate are disposed at both ends of a pixel, respectively, and it is necessary to separately provide a storage capacitance electrode useful for forming a storage capacitor with the common electrode line, the pixel region occupied by the thin film transistor and the common electrode line can be effectively decreased. Thus, the aperture ratio is increased, and the display brightness of an IPS liquid crystal display device is enhanced. | 05-26-2016 |
20160147124 | PIXEL STRUCTURE OF DISPLAY PANEL - A pixel structure of display panel includes a first thin film transistor device, a second thin film transistor device, a first passivation layer, a common electrode, a second passivation layer, a first pixel electrode and a second pixel electrode. The first passivation layer has a first opening partially exposing a first drain electrode of the first thin film transistor device and a second drain electrode of the second thin film transistor device. The common electrode has a second opening partially exposing the first drain electrode and the second drain electrode. The second passivation layer has a third opening partially exposing the first drain electrode and the second drain electrode. The first pixel electrode is electrically connected to the first drain electrode through the third opening, the second opening and the first opening, and the second pixel electrode is electrically connected to the second drain electrode through the third opening, the second opening and the first opening. | 05-26-2016 |
20160148838 | ARRAY SUBSTRATE AND FABRICATION METHOD THEREOF, AND DISPLAY DEVICE - Embodiments of the disclosure disclose an array substrate and a fabrication method thereof, and a display device. The fabrication method of the array substrate comprises: forming a thin film transistor; forming a passivation layer covering the thin film transistor, the passivation layer having a via hole and the via hole exposing at least a portion of a drain electrode of the thin film transistor; forming a via-hole conductive layer, the via-hole conductive layer covering the portion of the drain electrode exposed at the via hole and connected to the drain electrode; treating the via-hole conductive layer, so that a reflectivity of the via-hole conductive layer is lower than a reflectivity of the drain electrode; and forming a pixel electrode, the pixel electrode being connected with the drain electrode through the via-hole conductive layer. | 05-26-2016 |
20160148950 | THIN-FILM TRANSISTOR ARRAY SUBSTRATE, MANUFACTURING METHOD, AND DISPLAY DEVICE - A thin-film transistor array substrate includes a substrate and a plurality of thin-film transistors and a plurality of open areas formed on the substrate in a grid arrangement and also includes a first insulation protection layer, a color filter layer, a pixel electrode, a common electrode, a second insulation protection layer, a via, an insulation layer, and a black matrix arranged on the substrate. The first insulation protection layer is formed on the plurality of thin-film transistors and the plurality of open areas. The thin-film transistors each include a gate and a drain. The pixel electrode is connected through the via to the drain. The black matrix is located on the insulation layer or alternatively on the pixel electrode and the insulation layer to shield the thin-film transistors and the via. A display device and a manufacturing method of the thin-film transistor array substrate are also provided. | 05-26-2016 |
20160148951 | ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME, AND LIQUID CRYSTAL DISPLAY SCREEN - Embodiments of the present invention disclose an array substrate and a method of manufacturing the same, and a liquid crystal display screen. The array substrate comprises gate lines, data lines arranged to intersect the gate lines, common electrode signal lines, and a plurality of pixels defined by the gate lines and the data lines, wherein each pixel comprises a drive transistor, a pixel electrode connected with one of a source electrode and a drain electrode of the drive transistor while the other one of the source electrode and the drain electrode of the drive transistor is connected with the respective data line, and a common electrode electrically connected with the respective common electrode signal line, and, the common electrode signal lines and the gate lines are formed in the same layer and extend in the same direction as the gate lines, wherein each pixel further comprises a common electrode connection line formed in the same layer as the respective common electrode signal line and extending in a direction of the respective data line, and the common electrode connection line is electrically connected with the respective common electrode signal line and the respective common electrode. Embodiments of the present invention is made so that the pixel resistance value is reduced, reducing the phenomenon of partial green picture in the liquid crystal display screen as a whole. | 05-26-2016 |
20160148953 | ARRAY SUBSTRATE, RADIATION DETECTOR, AND WIRING SUBSTRATE - According to the embodiment, an array substrate includes a substrate, a plurality of first wirings, a plurality of second wirings, a thin film transistor, a protective layer, and a plurality of connection parts electrically connected to each of the plurality of first wirings and the plurality of second wirings, and including a conductive material having higher corrosion resistance than a material of the plurality of first wirings and the plurality of second wirings. | 05-26-2016 |
20160148954 | MANUFACTURING METHOD OF ARRAY SUBSTRATE, ARRAY SUBSTRATE AND DISPLAY DEVICE - The present invention provides an array substrate and a manufacturing method thereof and a display device. The manufacturing method comprises: forming a pattern including a pixel electrode and a source of a thin film transistor on a base substrate through a single patterning process, the pixel electrode is provided in a layer under a layer in which the source is located; forming a pattern including a drain, an active layer, a gate insulation layer and a gate of the thin film transistor through a single patterning process, the active layer covers the source and the drain, and is separated from the gate through the gate insulation layer; and forming a pattern including a passivation layer, a common electrode and a gate line through a single patterning process, the common electrode is a slit electrode and separated from the active layer and the pixel electrode through the passivation layer. | 05-26-2016 |
20160148955 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME - A thin film transistor array panel according to an exemplary embodiment of the present invention has a first gate insulting layer and a second gate insulating layer disposed on the first gate insulating layer. The gate electrode of the present invention is formed in an opening of the first gate insulating layer with the same height as that of the gate electrode. Therefore, the second gate insulating layer formed on the gate electrode and the first gate insulating layer renders a flat surface without a step. This may reduce or eliminate any defects caused by the step around gate electrodes, such as source electrode and/or drain electrode cracks. | 05-26-2016 |
20160148956 | TFT SUBSTRATES AND THE MANUFACTURING METHOD THEREOF - A TFT substrate and the manufacturing method thereof are disclosed. The method includes: providing a substrate; forming a gate electrode on the substrate; forming a first insulation layer and an active layer on the gate electrode in turn; forming a first black matrix on the active layer; forming a source electrode and a drain electrode on the first black matrix; forming a second insulation layer on the source electrode and the drain electrode; and forming a pixel electrode on the second insulation layer. The pixel electrode is electrically connected to the source electrode or the drain electrode via the second insulation layer. In this way, the masking effect of the display panel assembled by the TFT substrate can be ensured. In addition, the coupling capacitance between the data line and the scanning line may be reduced. | 05-26-2016 |
20160148957 | LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A liquid crystal display device is disclosed. The liquid crystal display device includes a first substrate, a second substrate opposite of the first substrate, and a TFT layer on the first substrate. The TFT layer includes a gate electrode metal layer, and a source/drain electrode metal layer, where the source/drain electrode metal layer overlaps the gate electrode metal layer. The display device also includes an alignment film layer on a side of the first substrate that faces the second substrate, and on a side of the second substrate that faces the first substrate. The display device also includes at least one protrusion on at least a part of a side of at least one of the gate electrode metal layer and the source/drain electrode metal layer that faces the first substrate, where the protrusion is configured to reflect incident light from a side of the first substrate. | 05-26-2016 |
20160154265 | DISPLAY PANEL, METHOD FOR MANUFACTURING DISPLAY PANEL AND DISPLAY DEVICE | 06-02-2016 |
20160154281 | LIQUID CRYSTAL DISPLAY | 06-02-2016 |
20160155752 | DISPLAY PANEL | 06-02-2016 |
20160155753 | DISPLAY DEVICE | 06-02-2016 |
20160155755 | DISPLAY PANEL | 06-02-2016 |
20160155756 | PIXEL STRUCTURE, MANUFACTURING METHOD OF PIXEL STRUCTURE, ARRAY SUBSTRATE, AND DISPLAY PANEL | 06-02-2016 |
20160155787 | METHOD FOR FABRICATING DISPLAY DEVICE AND DISPLAY DEVICE THEREOF | 06-02-2016 |
20160155847 | THIN FILM TRANSISTOR AND ARRAY SUBSTRATE HAVING SAME | 06-02-2016 |
20160163737 | ARRAY SUBSTRATE, MANUFACTURING METHOD OF ARRAY SUBSTRATE AND DISPLAY DEVICE - Embodiments of the present invention disclose an array substrate, a manufacturing method of the array substrate and a display device, and the manufacturing method of the array substrate comprises: forming a gate line and a gate electrode on a base substrate; forming a gate insulating layer above the gate line and the gate electrode; successively depositing a semiconductor layer and a metal layer above the gate insulating layer, and forming an active layer, a source electrode and a drain electrode that are disposed above the gate electrode and a residual semiconductor layer disposed above the gate line and a signal line covering the residual semiconductor layer by using one patterning process; performing a patterning process for the signal line, the residual semiconductor layer disposed below the signal line and the gate insulating layer to form a via hole, so that a surface of the gate line, side sectional surfaces of the signal line, side sectional surfaces of the residual semiconductor layer and side sectional surfaces of the gate insulating layer are exposed through the via hole; and forming a lapping conductive layer at a position where the via hole is located, so that the signal line and the gate line are electrically connected. | 06-09-2016 |
20160163762 | RADIATION IMAGE PICKUP UNIT AND RADIATION IMAGE PICKUP DISPLAY SYSTEM - There is provided a radiation image pickup unit including a plurality of pixels configured to generate signal charge based on radiation; and a field effect transistor for readout of the signal charge from the plurality of pixels, the transistor including a first silicon oxide film, a semiconductor layer including an active layer, and a second silicon oxide life stacked in order from substrate side, and a first gate electrode disposed to face the semiconductor layer with one of the first and the second silicon oxide films in between. The second silicon oxide film has a thickness equal to or larger than a thickness of the first silicon oxide film. | 06-09-2016 |
20160170253 | LIQUID CRYSTAL PANEL AND MANUFACTURE METHOD THEREOF | 06-16-2016 |
20160170261 | POLARIZER, DISPLAY SUBSTRATE, DISPLAY PANEL HAVING THE SAME AND METHOD OF MANUFACTURING THE SAME | 06-16-2016 |
20160172385 | ARRAY SUBSTRATE AND DISPLAY DEVICE USING THE SAME | 06-16-2016 |
20160178822 | WIRE GRID POLARIZER AND METHOD OF FABRICATING THE SAME | 06-23-2016 |
20160178950 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF | 06-23-2016 |
20160178963 | COLOR FILTER SUBSTRATE AND DISPLAY DEVICE | 06-23-2016 |
20160181278 | ARRAY SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE | 06-23-2016 |
20160181279 | ARRAY SUBSTRATE FOR DISPLAY DEVICES | 06-23-2016 |
20160181281 | DISPLAY PANEL HAVING IMPROVED BRIGHTNESS AND METHOD FOR FABRICATING THE SAME | 06-23-2016 |
20160181283 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD OF THE SAME | 06-23-2016 |
20160181287 | FLEXIBLE SUBSTRATE, MANUFACTURING METHOD THEREOF AND FLEXIBLE DISPLAY DEVICE | 06-23-2016 |
20160181387 | THIN FILM TRANSISTOR AND ORGANIC LIGHT-EMITTING DISPLAY | 06-23-2016 |
20160181389 | THIN FILM TRANSISTOR SUBSTRATE, DISPLAY APPARATUS INCLUDING THE SAME, METHOD OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING DISPLAY APPARATUS INCLUDING THE SAME | 06-23-2016 |
20160181423 | DISPLAY PANEL | 06-23-2016 |
20160187689 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD OF FABRICATING SAME - A thin film transistor (TFT) array substrate includes a first substrate, a plurality of TFTs formed on the first substrate, a color filter layer covered on the TFTs, and a plurality of pixel electrodes corresponding to the TFTs. The color filter layer is directly formed on the TFTs. The color filter layer includes a plurality of photoresist units. Each of the pixel electrodes is to electrically connected to a drain of the TFT via an opening. | 06-30-2016 |
20160187690 | IN-CELL TOUCH LIQUID CRYSTAL DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - Disclosed are an in-cell touch liquid crystal display (LCD) apparatus having a pixel electrode top structure and a method of manufacturing the same. The in-cell touch LCD apparatus is implemented in the pixel electrode top structure, thereby preventing color mixing between red, green, and blue pixels. The method of manufacturing the in-cell touch LCD apparatus decreases the number of masks necessary to manufacture a TFT array substrate, thereby reducing a manufacturing time and the manufacturing cost. | 06-30-2016 |
20160187692 | IN-CELL TOUCH LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - Disclosed are an in-cell touch liquid crystal display (LCD) device having a pixel electrode top structure and a method of manufacturing the same. The in-cell touch LCD device includes a thin film transistor (TFT) disposed in each of a plurality of pixel areas, first to fourth passivation layers disposed on the TFT, a common electrode disposed on the second passivation layer, a conductive line disposed on the third passivation layer; a pixel electrode connected to a drain electrode of the TFT and disposed on the fourth passivation layer, and a bridge contact part configured to electrically connect the common electrode to the conductive line. | 06-30-2016 |
20160187693 | IN-CELL TOUCH LIQUID CRYSTAL DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - Disclosed are an in-cell touch liquid crystal display (LCD) apparatus having a pixel electrode top structure and a method of manufacturing the same. The in-cell touch LCD apparatus is implemented in the pixel electrode top structure, thereby preventing color mixing between red, green, and blue pixels. The method of manufacturing the in-cell touch LCD apparatus decreases the number of masks necessary to manufacture a TFT array substrate, thereby reducing a manufacturing time and the manufacturing cost. | 06-30-2016 |
20160187751 | DISPLAY DEVICE - According to one embodiment, a display device includes a first signal line, a second signal line, a first switching element, a second switching element, an insulating film, a first contact hole, a second contact hole, a first pixel electrode and a second pixel electrode. The first contact hole is formed in the insulating film, and located between the first signal line and the second signal line. The second contact hole is formed in the insulating film, located opposite to the first contact hole with respect to the second signal line, and also located side by side with the first contact hole in the first direction. | 06-30-2016 |
20160190119 | DISPLAY PANEL INCLUDING STATIC ELECTRICITY PREVENTING PATTERN AND DISPLAY DEVICE HAVING THE SAME - The present invention relates to a display panel including a static electricity preventing pattern and a display device having the same. An aspect of the present invention provides a display device or a display panel in which a dummy pattern having a pattern identical to or similar to a line of a signal area is positioned between the signal area and a non-signal area, in a pad including the signal area and the non-signal area. | 06-30-2016 |
20160190159 | ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, DISPLAY DEVICE - An array substrate is disclosed. The array substrate includes gate lines and data lines, and first and second signal lines. A first data line is between first and second pixel units, respectively including first and second film transistors. A first gate line is electrically connected to the gate electrodes of the first and second film transistors. The second electrode of the second film transistor is electrically connected to the first data line, and the second electrode of the first film transistor is electrically connected to the first signal line. The array substrate also includes a common electrode layer partially located between a third pixel unit and the first pixel unit, which is electrically insulated. In addition, a portion of the common electrode layer between the first pixel unit and the second pixel unit overlaps the first data line. | 06-30-2016 |
20160190160 | ARRAY SUBSTRATE FOR DISPLAY DEVICE - The array substrate for display device includes: a substrate; a signal line disposed on the substrate; a first color filter disposed on one side of the signal line; a second color filter disposed on the other side of the signal line; and an overlapping portion disposed to overlap part of the first color filter and part of the second color filter. The first color filter extends to overlap the signal line and the overlapping portion is disposed on the other side of the signal line so as not to overlap the signal line. | 06-30-2016 |
20160190161 | ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE - The present disclosure provides an array substrate and a method of manufacturing the same, and a display device comprising the array substrate. The array substrate comprises: a substrate; gate lines and data lines arranged to intersect one another on the substrate; a gate line connection conducting wire layer provided between the gate lines and the substrate and below the gate lines; and /or, a data line connection conducting wire layer provided in regions of the array substrate corresponding to the data lines; wherein the gate line connection conducting wire layer is electrically isolated from the data line connection conducting wire layer. | 06-30-2016 |
20160190162 | ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE - The present disclosure provides an array substrate and a method of manufacturing the same, and a display device. TA connecting portion is provided within the overlapping region between the first signal line and the second signal line, is electrically conductive and directly contacts the second signal line. Thus, even when the upper second signal line is broken due to the large step difference within the overlapping region between the first signal line and the second signal line, the connecting portion electrically connected with the broken second signal line can still electrically connect and conduct the broken second signal line, thereby avoiding transmission of signal from being adversely affected by the broken signal line within the overlapping region. | 06-30-2016 |
20160190163 | TFT ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE - Embodiments of the present disclosure provide a method for manufacturing a TFT array substrate. The method comprises, forming a passivation layer on a substrate formed with a data line, the passivation layer including a first portion of passivation layer over the data line and a second portion of passivation layer over regions other than the data line; and reducing the first portion of passivation layer by a first preset thickness, so that a thickness of the first portion of passivation layer is less than a thickness of the second portion of passivation layer. In abovementioned method, since a portion of passivation layer over the data line is reduced by certain thickness so that the thickness of the passivation layer over the data line is less than the thickness of the passivation layer over regions other than the data line, it achieves a smaller drop height caused by the data line, thereby alleviating or overcoming problems such as light leakage, contrast decay caused by presence of the drop height in the array substrate, and achieving better display quality. Embodiments of the present disclosure also provide a TFT array substrate and a display device comprising the abovementioned TFT array substrate. | 06-30-2016 |
20160190164 | THIN FILM TRANSISTOR CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME - A thin film transistor (TFT) circuit device comprises a substrate comprising a major surface; a gate line formed over the substrate and extending in a first direction when viewed in a viewing direction perpendicular to the major surface; an insulating layer formed over the gate line; an electrically conductive line formed over the insulating layer and extending in a second direction when viewed in the viewing direction, the second direction being different from the first direction, the electrically conductive line comprising a source line or a data line; and a semiconductor piece formed over the substrate. The semiconductor piece comprises a portion which is located between the substrate and the gate line and overlaps the gate line and the electrically conductive line at an intersection of the gate line and the electrically conductive line when viewed in the viewing direction. | 06-30-2016 |
20160190169 | LTPS TFT Substrate Structure and Method of Forming the Same - A method of forming an LTPS TFT substrate includes: Step | 06-30-2016 |
20160190171 | ARRAY SUBSTRATE, DISPLAY PANEL AND METHOD FOR PREPARING ARRAY SUBSTRATE - The invention provides an array substrate, a display panel and a method for preparing an array substrate. The array substrate includes multiple low temperature poly-silicon (LTPS) thin film transistors arranged in an array. Each LTPS thin film transistor includes: a substrate; a LTPS layer, a source, a drain and a first conductive layer disposed on a same surface of the substrate, the source and the drain respectively being arranged at two sides of the LTPS layer and electrically connected with the LTPS layer, the drain being electrically connected with the first conductive layer; an insulating layer disposed on the LTPS layer, the source, the drain and the first conductive layer; a gate disposed on the insulating layer and corresponding to the LTPS layer; a passivation layer disposed on the gate; and a second conductive layer disposed on the passivation layer and corresponding to the first conductive layer. | 06-30-2016 |
20160190172 | ARRAY SUBSTRATE, DISPLAY DEVICE AND METHOD FOR FABRICATING ARRAY SUBSTRATE - The invention provides an array substrate, a method therefor and a display device. The array substrate includes: a substrate, and a thin film transistor (TFT) and a pull-down capacitor disposed on the substrate. The TFT includes: a gate, a gate insulating layer, a channel layer, a source, a drain and a passivation layer. The passivation layer is disposed with a via hole corresponding to the drain, a pixel electrode is connected to the drain through the via hole. The pull-down capacitor includes: a first conductive layer, a first spacer layer, a filling layer, a second spacer layer and a second conductive layer successively stacked on the substrate. The sum of thicknesses of the filling layer and the first spacer layer is greater than the sum of thicknesses of the drain and the channel layer, to make the second conductive layer and the pixel electrode be located at different levels. | 06-30-2016 |
20160190173 | DISPLAY APPARATUS - A display apparatus includes a first pixel and a second pixel adjacent to each other, wherein a first channel region of a driving transistor of the first pixel has a reverse U-shaped pattern, and a second channel region of a driving transistor of the second pixel has a pattern opposite the pattern of the first channel region. | 06-30-2016 |
20160190284 | METHOD FOR FABRICATING LIGHTLY DOPED DRAIN AREA, THIN FILM TRANSISTOR AND ARRAY SUBSTRATE - Embodiments of the disclosure provide a method for fabricating a lightly doped drain area, a thin film transistor, and a thin film transistor array substrate. In an embodiment of the disclosure, a poly-silicon layer, a gate insulation layer, and a gate metal layer are formed in sequence on a substrate; the gate metal layer is patterned to form a gate electrode; the gate insulation layer is etched to form a stepped structure, wherein a width of the gate electrode is smaller than a width of the stepped structure, and an edge of the stepped structure is not covered by the gate electrode; and the poly-silicon layer is doped by an ion doping process using the gate electrode and the gate insulation layer with the stepped structure as a mask to form both a lightly doped area and a heavily doped area. | 06-30-2016 |
20160190341 | THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR SUBSTRATE - A thin film transistor includes a first gate electrode located on a base, a second gate electrode located on the base, an insulating layer, a source electrode, a drain electrode, and a channel layer. The insulating layer covers the base, the first gate electrode, and the second gate electrode. The second gate electrode is insulated from the first gate electrode. The channel layer includes a first portion and a second portion sandwiched between the first portion and the insulating layer. A conductivity of the second portion is larger than a conductivity of the first portion. The first portion includes a first region facing the first gate electrode and a second region facing the second gate electrode. The source electrode is electrically connected to the first region, and the drain electrode is electrically connected to the second region. | 06-30-2016 |
20160190504 | ELECTRO-OPTICAL APPARATUS, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE - There is provided an electro-optical apparatus including an element substrate that includes a display region in which a plurality of light-emitting elements are arranged, and a peripheral region in which a terminal is disposed. The light-emitting element has a structure in which a reflective electrode, an optical adjustment layer, a first electrode, a light-emitting layer, and a second electrode are laminated, and the first electrode is electrically connected to a contact electrode. The terminal has a structure in which a first terminal layer that is formed by a first conductive film which is the same as the reflective electrode, a second terminal layer that is formed by a second conductive film which is the same as the contact electrode, and a third terminal layer that is formed by a third conductive film which is the same as the first electrode are laminated. | 06-30-2016 |
20160195746 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF | 07-07-2016 |
20160195788 | LIQUID CRYSTAL DISPLAY DEVICE | 07-07-2016 |
20160197096 | ARRAY SUBSTRATE, MANUFACTURING METHOD THEREFOR AND DISPLAY DEVICE | 07-07-2016 |
20160197098 | ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE | 07-07-2016 |
20160197100 | ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, DISPLAY APPARATUS | 07-07-2016 |
20160197101 | GRAPHENE DOPED MATERIAL AND MANUFACTURING METHOD THEREOF, AND PIXEL STRUCTURE | 07-07-2016 |
20160197102 | ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF, DISPLAY PANEL AND DISPLAY DEVICE | 07-07-2016 |
20160197103 | THIN-FILM TRANSISTOR SUBSTRATE | 07-07-2016 |
20160197197 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME | 07-07-2016 |
20160197295 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD OF THE SAME | 07-07-2016 |
20160202526 | LIQUID CRYSTAL DISPLAY AND METHOD FOR MANUFACTURING THE SAME | 07-14-2016 |
20160202529 | LIQUID CRYSTAL DISPLAY AND METHOD FOR MANUFACTURING THE SAME | 07-14-2016 |
20160202538 | LIQUID CRYSTAL DISPLAY | 07-14-2016 |
20160202545 | TRANSISTOR SUBSTRATE, RELATED DISPLAY DEVICE, AND RELATED MANUFACTURING METHOD | 07-14-2016 |
20160202580 | LIQUID CRYSTAL DISPLAY AND METHOD OF MANUFACTURING THE SAME | 07-14-2016 |
20160202581 | DISPLAY DEVICE | 07-14-2016 |
20160202583 | LIQUID CRYSTAL DISPLAY | 07-14-2016 |
20160202586 | LIQUID CRYSTAL DISPLAY | 07-14-2016 |
20160204125 | THIN FILM TRANSISTOR ARRAY PANEL | 07-14-2016 |
20160204133 | SUBSTRATE FOR CURVED DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF | 07-14-2016 |
20160204138 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME | 07-14-2016 |
20160204167 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF | 07-14-2016 |
20160252763 | ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME, DISPLAY PANEL AND DISPLAY DEVICE | 09-01-2016 |
20160252780 | LIQUID CRYSTAL DISPLAY PANEL AND MANUFACTURING METHOD THEREOF | 09-01-2016 |
20160252793 | ARRAY SUBSTRATE, ITS MANUFACTURING METHOD, DISPLAY PANEL AND DISPLAY DEVICE | 09-01-2016 |
20160254273 | ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE | 09-01-2016 |
20160254274 | LIGHT-EMITTING DIODE (LED) DISPLAY PANEL, MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE | 09-01-2016 |
20160254275 | ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE | 09-01-2016 |
20160254276 | DISPLAY DEVICE | 09-01-2016 |
20160254277 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | 09-01-2016 |
20160254278 | DISPLAY DEVICE | 09-01-2016 |
20160254283 | ARRAY SUBSTRATE AND ITS MANUFACTURING METHOD, DISPLAY DEVICE | 09-01-2016 |
20160254284 | ARRAY SUBSTRATE, METHOD OF PREPARING THE SAME, AND DISPLAY DEVICE | 09-01-2016 |
20160254285 | Thin Film Transistor and Method of Fabricating the Same, Array Substrate and Method of Fabricating the Same, and Display Device | 09-01-2016 |
20160254288 | ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, DISPLAY DEVICE | 09-01-2016 |
20160254289 | ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, DISPLAY DEVICE | 09-01-2016 |
20160254290 | Low-Temperature Polysilicon Thin Film Transistor Array Substrate and Method of Fabricating the Same, and Display Device | 09-01-2016 |
20160254298 | Array Substrate, Manufacturing Method Thereof, and Display Device | 09-01-2016 |
20160254329 | FLEXIBLE DISPLAY PANEL, MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE | 09-01-2016 |
20160254368 | POLY-SILICON THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE | 09-01-2016 |
20160254389 | LOW TEMPERATURE POLY-SILICON THIN FILM TRANSISTOR AND FABRICATION METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY DEVICE | 09-01-2016 |
20160377905 | Display Device and Method of Manufacturing the Same - Disclosed is a display device and a method of manufacturing the same, wherein an end portion of a pad provided on a first substrate is spaced apart and separated from an upper surface of the first substrate, and a connection electrode electrically connected with the pad is in contact with a lateral surface of the pad and a lower surface of the pad. | 12-29-2016 |
20160377910 | ELECTRO-OPTICAL DEVICE AND ELECTRONIC APPARATUS - In an electro-optical device, a relay electrode (first electrode) includes a conduction section that overlaps the projection portion of an inter-layer insulation film, and the conduction section is exposed from the surface (flat surface) of the inter-layer insulation film. An insulation film which has a film thickness thinner than the height of the projection portion is formed on the surface (flat surface) of the inter-layer insulation film, and a pixel electrode is electrically conducted to the conduction section through the opening of the insulation film. In this case, since the opening is shallow, a large uneven part is hardly generated on the surface of the pixel electrode. | 12-29-2016 |
20160377918 | Liquid Crystal Display Device - It is an object to provide a display having high visibility and a transflective type liquid crystal display device having a reflection electrode having a concavo-convex structure formed without especially increasing the process. During manufacturing a transflective liquid crystal display device, a reflection electrode of a plurality of irregularly arranged island-like patterns and a transparent electrode of a transparent conductive film are layered in forming an electrode having transparent and reflection electrodes thereby having a concavo-convex form to enhance the scattering ability of light and hence the visibility of display. Furthermore, because the plurality of irregularly arranged island-like patterns can be formed simultaneous with an interconnection, a concavo-convex structure can be formed during the manufacturing process without especially increasing the patterning process only for forming a concavo-convex structure. It is accordingly possible to greatly reduce cost and improve productivity. | 12-29-2016 |
20160377943 | LIQUID CRYSTAL DISPLAY SUBSTRATE AND LIQUID CRYSTAL DISPLAY PANEL HAVING THE SAME - A liquid crystal display substrate includes a gate line, a data line a switching element and a pixel electrode each provided in plural. The pixel electrodes include first to fourth pixel electrodes. The first pixel electrode is connected to a first gate line and a first data line. The second pixel electrode is connected to the first gate line and a second data line adjacent to the first data line. The third pixel electrode is connected to a second gate line adjacent to the first gate line and the first data line. The fourth pixel electrode is connected to the second gate line and the second data line. The first gate line overlaps the first and second pixel electrodes and the second gate line overlaps the third and fourth pixel electrodes. Sizes of the first to fourth pixel electrodes are different from one another. | 12-29-2016 |
20160377945 | Array Substrate, Manufacture Method Thereof, and Display Device - An array substrate, a manufacture method thereof and a display device are provided. The array substrate includes: gate lines and data lines which are crossed to define a plurality of pixel units; and common electrode lines intersected with the data lines, the pixel units being provided with pixel electrodes; wherein, the common electrode lines are provided with first protrusions electrically connected to the common electrode lines; the gate lines are provided with first grooves; the first protrusions are disposed in the first grooves; and the pixel electrodes are overlapped with corresponding first protrusions. | 12-29-2016 |
20160379996 | Display Substrate and Manufacturing Method Thereof, and Display Device - The present invention provides a display substrate and a manufacturing method thereof, and a display device. The display substrate comprises a base substrate, and gate lines, data lines, a gate driving circuit and a source driving circuit on the base substrate, the gate lines and the data lines define pixel units, the pixel unit comprises a thin film transistor and a pixel electrode, the data lines are connected to the source driving circuit, the display substrate further comprising gate line connection wires on the base substrate, the gate lines are connected to the gate driving circuit through the gate line connection wires, the gate driving circuit and the source driving circuit are located at edge positions on the base substrate in an extending direction of the data lines, and they are opposite to each other. The widths of the bezel in the extending direction of the gate lines are reduced. | 12-29-2016 |
20160379997 | DISPLAY APPARATUS AND MANUFACTURING METHOD THEREOF - An exemplary embodiment of the described technology relates generally to a display apparatus including a plurality of pixels and corresponding to one area of a substrate for displaying an image, and a pad area corresponding to another area of the substrate, the pad area including a lower electrode configured to transmit an electric signal to the pixels, and a plurality of pad electrodes electrically connecting the lower electrode and a driving chip, wherein each of the pad electrodes includes a first contact surface for contacting the lower electrode, a second contact surface for contacting the driving chip, and an oxide layer on a surface of the pad electrode that is exposed to the outside, and that connects the first contact surface and the second contact surface. | 12-29-2016 |
20160379998 | DISPLAY DEVICE - A display device is disclosed. In one aspect, the display device includes a substrate, a first signal line formed over the substrate and a first insulating layer formed over the substrate and the first signal line. The display device also includes a second signal line formed over the first insulating layer and including an overlapping area that overlaps the first signal line, a second insulating layer formed over the second signal line and having a via hole that exposes at least a part of the overlapping area. The display device further includes an auxiliary wiring layer covering the via hole and connected to the overlapping area through the via hole. | 12-29-2016 |
20160380005 | ARRAY SUBSTRATE, PREPARATION METHOD THEREOF AND DISPLAY DEVICE - The present invention provides an array substrate, a preparation method thereof and a display device. The array substrate includes at least one thin film transistor and a resin layer having at least one resin via hole, wherein a film-thickness-difference-adjusting layer used for reducing the film thickness difference at the resin via hole is arranged at the lower part of the resin layer in at least a part of the resin via hole. By providing the film-thickness-difference-adjusting layer, the film thickness difference at the resin via hole can be effectively reduced, and when a photolithographic process is performed, the difference of the thickness of the photoresist here and the thicknesses at other positions is reduced, so that the via hole fluctuation of a passivation layer caused by the larger film thickness difference at the resin via hole is improved, and the metal residue problem of the pixel electrodes is effectively avoided. | 12-29-2016 |
20160380009 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - A thin film transistor (TFT) array substrate and its manufacturing method are disclosed. The TFT array substrate includes a component assembly layer, a passivation layer and a pixel electrode layer. The passivation layer is disposed on the component assembly layer, and a hole and a first recess are provided on the passivation layer. The pixel electrode layer is disposed on the passivation layer and inside the first recess, and the pixel electrode layer is connected with the second signal line layer by the hole. The present invention can reduce the manufacturing cost and improve the manufacturing efficiency. | 12-29-2016 |
20160380040 | DISPLAY DEVICE - A display device includes a plurality of pixel electrodes, a common electrode disposed from a display area to a peripheral area continuously, a light emitting layer disposed between the plurality of pixel electrodes and the common electrode, and a plurality of auxiliary wirings electrically connecting to the common electrode and located from the display area to the peripheral area continuously. The common electrode includes overlapping areas where the common electrode is in contact with and overlaps the auxiliary wiring in the peripheral area, and includes a thick film portion in at least a portion of the overlapping areas. A thickness of the thick film portion is larger than that of an area other than the overlapping areas. | 12-29-2016 |
20160380064 | THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR SUBSTRATE INCLUDING THE SAME - A thin film transistor substrate includes: a substrate; and a thin film transistor including a gate electrode on the substrate, an active layer on the gate electrode, and a source electrode and a drain electrode on the active layer. Within the thin film transistor, at least one of the source electrode and the drain electrode defines a plurality of branch electrodes thereof and a main electrode to which the plurality of branch electrodes is commonly connected. Each of the plurality of branch electrodes overlaps the gate electrode. | 12-29-2016 |
20160380110 | DISPLAY PANEL - A display panel is disclosed, which comprises: a substrate; a gate electrode disposed on the substrate; a gate insulation layer disposed on the substrate and the gate electrode; an active layer disposed on the gate insulation layer and over the gate electrode; a source electrode and a drain electrode disposed on the active layer; a first protection layer disposed on at least one of the source electrode and the drain electrode; and a metal oxide layer formed on a sidewall of the at least one of the source electrode and the drain electrode. | 12-29-2016 |
20160380112 | DIFFERENT LIGHTLY DOPED DRAIN LENGTH CONTROL FOR SELF-ALIGN LIGHT DRAIN DOPING PROCESS - A method is provided for fabricating thin-film transistors (TFTs) for an LCD having an array of pixels. The method includes depositing a first photoresist layer over a portion of a TFT stack. The TFT stack includes a conductive gate layer, and a semiconductor layer. The method also includes doping the exposed semiconductor layer with a first doping dose. The method further includes etching a portion of the conductive gate layer to expose a portion of the semiconductor layer, and doping the exposed portion of the semiconductor layer with a second doping dose. The method also includes removing the first photoresist layer, and depositing a second photoresist layer over a first portion of the doped semiconductor layer in an active area of the pixels to expose a second portion of the doped semiconductor layer in an area surrounding the active area. The method further includes doping the second portion of the doped semiconductor layer with a third doping dose, the first dose being higher than the second dose and the third dose. | 12-29-2016 |
20160380114 | THIN FILM TRANSISTOR, ARRAY SUBSTRATE AND DISPLAY DEVICE - A thin film transistor, an array substrate and a display device are provided by the present disclosure. The thin film transistor is on a base substrate, a profile of a width edge of the channel includes an up-and-down curved section in a direction perpendicular to a surface of the base substrate. | 12-29-2016 |
20170235170 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND LIQUID CRYSTAL DISPLAY PANEL | 08-17-2017 |
20170235181 | ACTIVE MATRIX SUBSTRATE AND DISPLAY DEVICE | 08-17-2017 |
20170235182 | DISPLAY DEVICE | 08-17-2017 |
20170235193 | PIXEL UNIT AND ARRAY SUBSRTATE | 08-17-2017 |
20170236838 | THIN FILM TRANSISTOR ARRAY SUBSTRATE, DISPLAY PANEL AND DISPLAY DEVICE | 08-17-2017 |
20170236847 | Display Panel And Manufacturing Method For The Same | 08-17-2017 |
20170236891 | ELECTRO-OPTICAL DEVICE AND ELECTRONIC APPARATUS | 08-17-2017 |
20170236947 | Dual-gate Thin Film Transistor and Manufacturing Method Thereof and Array Substrate | 08-17-2017 |
20170236950 | DISPLAY DEVICE | 08-17-2017 |
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20180026057 | ARRAY SUBSTRATE, DISPLAY PANEL, DISPLAY DEVICE AND MASK PLATE | 01-25-2018 |
20180026072 | ACTIVE MATRIX IMAGE SENSING DEVICE | 01-25-2018 |
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20190148408 | ARRAY SUBSTRATE AND DISPLAY PANEL | 05-16-2019 |
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20220139965 | DISPLAY DEVICE - A display device includes a substrate and a transistor disposed on the substrate and including a semiconductor layer, wherein the semiconductor layer includes a mesh structure, and wherein a plurality of openings are formed in the semiconductor layer. | 05-05-2022 |
20220139966 | TRANSISTOR SUBSTRATE AND DISPLAY DEVICE INCLUDING THE SAME - A display device includes a substrate, a semiconductor layer disposed on the substrate, and including a first channel portion, a second channel portion, a connecting portion disposed between the first channel portion and the second channel portion, and electrode regions, a first insulating layer disposed on the semiconductor layer, a gate conductor disposed on the first insulating layer and including a first gate electrode overlapping the first channel portion and a second gate electrode overlapping the second channel portion, signal lines disposed on the substrate, a first electrode electrically connected to at least one of electrode regions of the semiconductor layer, an emission layer disposed on the first electrode, and a second electrode disposed on the emission layer, and the first channel portion and the second channel portion of the semiconductor layer each have a first width greater than a second width of the connecting portion. | 05-05-2022 |
20220140016 | DISPLAY PANEL AND FABRICATING METHOD THEREOF, AND DISPLAYING DEVICE - A display panel and a fabricating method thereof, and a displaying device. The display panel includes: a thin-film-transistor base plate; a planarization layer, wherein the planarization layer is provided on one surface of the thin-film-transistor base plate; and light emitting devices, wherein the light emitting devices are provided on one side of the planarization layer that is further away from the thin-film-transistor base plate, the light emitting devices include a blue-color light emitting device, a red-color light emitting device and a green-color light emitting device, the blue-color light emitting device includes a first anode, the red-color light emitting device includes a second anode, and the green-color light emitting device includes a third anode; and both of the surface roughness of the first anode and the surface roughness of the second anode are greater than the surface roughness of the third anode. | 05-05-2022 |