Entries |
Document | Title | Date |
20080197356 | THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A thin film transistor (TFT) substrate and a method of manufacturing the same in which the surface of a data pattern is implanted with ions to increase the adhesion force with a passivation layer formed by a subsequent process. The TFT substrate includes: an active layer having a channel region formed of a semiconductor and source and drain regions doped with impurities; a data pattern formed on the active layer and including source and drain electrodes, the surface of which is implanted with ions to increase hydrophobicity and roughness; a passivation layer formed on the data pattern and including a pixel contact hole exposing a portion of the drain electrode; and a pixel electrode formed on the passivation layer and connected to the drain electrode through the pixel contact hole, and a method of manufacturing the same. | 08-21-2008 |
20080210946 | IMAGE DETECTOR AND RADIATION DETECTING SYSTEM - The invention provides an image detector capable of improving the quality of detected images by reducing electronic noise, the image detector comprising, a plurality of scan lines disposed in parallel, a plurality of data lines provided so as to cross with the scan lines, thin film transistors connected with the scan and data lines and provided in matrix, sensor sections connected to the thin film transistor and provided in a matrix and a plurality of common lines disposed so as to apply bias voltage commonly to the sensor sections provided in matrix. Each of the scan lines, data lines and common lines are formed by metal layers different from each other and provided with insulating film(s) disposed therebetween. | 09-04-2008 |
20080217624 | CAPACITOR AND LIGHT EMITTING DISPLAY USING THE SAME - A capacitor including a polysilicon layer doped with impurities to be conductive, a first dielectric layer formed on the polysilicon layer, a first conductive layer formed on the first dielectric layer, a second dielectric layer formed on the first conductive layer, and a second conductive layer formed on the first dielectric layer. The second conductive layer is coupled to the polysilicon layer. | 09-11-2008 |
20080251791 | Thin film transistor substrate and method for fabricating same - An exemplary thin film transistor substrate ( | 10-16-2008 |
20080283841 | TFT SUBSTRATE AND MANUFACTURING METHOD, AND DISPLAY DEVICE WITH THE SAME - In forming a TFT and a storage capacitance element, whereas sharing with each other the conductive film and the insulation film, which are components of the TFT and the storage capacitance element, contributes to improving production efficiency, it is difficult to obtain a storage capacitance element that is optimized independently of the TFT. A TFT substrate provided with a TFT and a storage-capacitance element according to the present invention is characterized in that the storage-capacitance element is obtained that includes an electrically conductive film and an insulation film each being different from those used in the TFT. Furthermore, in order to form such a structure, a method of manufacturing the TFT substrate is provided that achieves both flexibility in design and efficiency in production without need for addition of any photolithography processes. | 11-20-2008 |
20080296581 | Pixel structure and method for forming the same - A pixel structure including at least one thin-film transistor, at least one storage capacitor, a patterned first metal layer, an interlayer dielectric layer, a passivation layer, and a patterned pixel electrode is provided. The storage capacitor is electrically connected to the thin-film transistor. The patterned first metal layer is covered by the interlayer dielectric layer. The thin-film transistor and the interlayer dielectric layer are covered by the passivation layer, wherein an opening is formed in the passivation layer and a part of the interlayer dielectric layer. The patterned pixel electrode is formed on a part of the passivation layer and a part of the interlayer dielectric layer and contacted with a part of the passivation layer and a part of the interlayer dielectric layer. The storage capacitor includes the patterned first metal layer, a remained part of the interlayer dielectric layer located under the opening, and the patterned pixel electrode. | 12-04-2008 |
20090001378 | DISPLAY DEVICE AND DRIVING METHOD THEREOF - A display device in which not only a variation in a current value due to a threshold voltage but also a variation in a current value due to mobility are prevented from influencing luminance with respect to all the levels of grayscale to be displayed. After applying an initial potential for correction to a gate and a drain of a driving transistor, the gate and the drain of the driving transistor is kept connected in a floating state, and a voltage is held in a capacitor before a voltage between the gate and a source of the driving transistor becomes equal to a threshold voltage. When a voltage obtained by subtracting the voltage held in the capacitor from a voltage of a video signal is applied to the gate and the source of the driving transistor, a current is supplied to a light-emitting element. A value of an initial voltage for correction differs in accordance with the voltage of the video signal. | 01-01-2009 |
20090057681 | THIN-FILM DEVICE, METHOD FOR MANUFACTURING THIN-FILM DEVICE, AND DISPLAY - A method for manufacturing a thin-film device includes forming a separation layer on a substrate, forming a base insulating layer on the separation layer, forming a thin-film device layer on the base insulating layer, bonding a transfer layer including the base insulating layer and the thin-film device layer to a transfer body with an adhesive, causing intralayer delamination or interfacial delamination in the separation layer, and removing the transfer layer from the substrate. The thin-film device layer includes a first wiring sublayer which is located at the bottom of the thin-film device layer and which is in contact with the base insulating layer, a dielectric sublayer which is in contact with a surface of the first wiring sublayer, a semiconductor sublayer electrically insulated from the first wiring sublayer with the dielectric sublayer, and a second wiring sublayer formed subsequently to the semiconductor sublayer. The first wiring sublayer includes electrodes located at the bottom of the thin-film device layer. | 03-05-2009 |
20090065780 | ELECTRO-OPTICAL DEVICE AND ELECTRONIC APPARATUS - An electro-optical device includes a contact hole with a channel-region adjacent portion next to the channel region of the semiconductor film and a first extending portion that extends from the channel-region adjacent portion along the first partial region of the semiconductor film when viewed in plan. | 03-12-2009 |
20090065781 | Touch substrate and electro-wetting display device having touch control function - A touch substrate includes a transparent substrate having a first surface and a second surface facing the first surface, a plurality of thin film transistor elements disposed on the second surface, and a capacitance touch structure. The capacitance touch structure includes a plurality of parallel first conductive electrodes disposed on the first surface and a plurality of parallel second conductive electrodes disposed on the second surface. The second electrodes cross the first electrodes insulatingly. The first electrodes, the second electrodes and the transparent substrate sandwiched therebetween form a plurality of sensing capacitors. | 03-12-2009 |
20090085037 | ARRAY SUBSTRATE FOR LIQUID CRYSTAL DISPLAY AND METHOD FOR FABRICATING THE SAME - A method for fabricating an array substrate for a liquid crystal display (LCD) is provided. A semiconductor layer and a transparent lower electrode formed on a substrate is provided and covered by a first dielectric layer serving as a gate dielectric layer and a capacitor dielectric layer. A gate electrode and an upper electrode comprising a transparent electrode portion and a metal electrode portion are formed on the first dielectric layer and covered by a second dielectric layer. A source/drain electrode, a planarization layer, and a pixel electrode are sequentially formed on the second dielectric layer, in which the source/drain electrode is electrically connected to the semiconductor layer through the first and second dielectric layers and the pixel electrode is electrically connected to the source/drain electrode through the planarization layer. An array substrate for an LCD is also disclosed. | 04-02-2009 |
20090101912 | ACTIVE DEVICE ARRAY FOR REDUCING DELAY OF SCAN SIGNAL AND FLAT PANEL DISPLAY USING THE SAME - An active device array and flat panel display using the same are provided. The active device array includes a plurality of pixels, a plurality of scan-lines, a plurality of data-lines and a plurality of auxiliary scan-lines, wherein each pixel is electrically connected to a corresponding scan-line and a corresponding data-line. Each scan-line has a first terminal and a second terminal, and the first terminal of scan-line receives a scan signal. The auxiliary scan-lines correspond to the scan-lines. One terminal of each auxiliary scan-line is electrically connected to the first terminal of a corresponding scan-line, and the other terminal thereof is electrically connected to the second terminal of the corresponding scan-line. | 04-23-2009 |
20090127562 | Semiconductor Device - To realize a semiconductor device including a capacitor element capable of obtaining a sufficient capacitor without reducing an opening ratio, in which a pixel electrode is flattened in order to control a defect in orientation of liquid crystal. A semiconductor device of the present invention includes a light-shielding film formed on the thin film transistor, a capacitor insulating film formed on the light-shielding film, a conductive layer formed on the capacitor insulating film, and a pixel electrode that is formed so as to be electrically connected to the conductive layer, in which a storage capacitor element comprises the light-shielding film, the capacitor insulating film, and the conductive layer, whereby an area of a region serving as the capacitor element can be increased. | 05-21-2009 |
20090134395 | ACTIVE MATRIX LIQUID CRYSTAL DISPLAY DEVICE - A first insulating thin film having a large dielectric constant such as a silicon nitride film is formed so as to cover a source line and a metal wiring that is in the same layer as the source line. A second insulating film that is high in flatness is formed on the first insulating film. An opening is formed in the second insulating film by etching the second insulating film, to selectively expose the first insulating film. A conductive film to serve as a light-interruptive film is formed on the second insulating film and in the opening, whereby an auxiliary capacitor of the pixel is formed between the conductive film and the metal wiring with first the insulating film serving as a dielectric. The effective aperture ratio can be increased by forming the auxiliary capacitor in a selected region where the influences of alignment disorder of liquid crystal molecules, i.e., disclination, are large. | 05-28-2009 |
20090166637 | DISPLAY APPARATUS WITH STORAGE ELECTRODES HAVING CONCAVO-CONVEX FEATURES - A display apparatus includes a substrate; a first insulating layer formed on the substrate and having an upper surface including a concavo-convex area including one or more concave features and one or more convex features; a first storage electrode overlaying the upper surface and a side surface of the first insulating layer and having an upper surface including a concavo-convex area including one or more concave features and one or more convex features, each concave feature of the first storage electrode overlying at least one respective concave feature of the first insulating layer, each convex feature of the first storage electrode overlying at least one respective convex feature of the first insulating layer; a second insulating layer formed on the first storage electrode; and a second storage electrode formed on the second insulating layer which separates the second storage electrode from the underlying first storage electrode. | 07-02-2009 |
20090166638 | DISPLAY DEVICE AND ELECTRONIC DEVICE PROVIDED WITH THE SAME - An object is to suppress decrease in luminance and appearance of flicker of a still image and to control a threshold voltage of a transistor for driving an EL element even in a state where the EL element continues to emit light for a certain period. An n-channel transistor and a p-channel transistor are provided as driving transistors for driving a light-emitting element, and a polarity of a potential which is supplied from a data line is reversed every given period and supplied to gates of the driving transistors in each pixel, whereby the threshold voltages of the driving transistors are controlled and change of luminance of the light-emitting element due to the threshold voltage shifts of the driving transistors can be reduced. | 07-02-2009 |
20090212296 | METHOD FOR MANUFACTURING DISPLAY DEVICE - A first conductive film, a first insulating film, a semiconductor film, an impurity semiconductor film, a second conductive film, and a first resist mask are formed; first etching is performed to expose at least a surface of the first conductive film; second etching accompanied by side etching is performed on part of the first conductive film to form a gate electrode layer; a second resist mask is formed; third etching is performed to form a source and drain electrode layers, a source and drain regions, and a semiconductor layer; a second insulating film is formed; an opening portion is formed in the second insulating film to partially expose the source or drain electrode layer; a pixel electrode is selectively formed in the opening portion and over the second insulating film; and a supporting portion formed using the gate electrode layer is formed in a region overlapping with the opening portion. | 08-27-2009 |
20090212297 | LAMINATING SYSTEM - It is an object of the invention to improve the production efficiency in sealing a thin film integrated circuit and to prevent the damage and break. Further, it is another object of the invention to prevent a thin film integrated circuit from being damaged in shipment and to make it easier to handle the thin film integrated circuit. The invention provides a laminating system in which rollers are used for supplying a substrate for sealing, receiving IC chips, separating, and sealing. The separation, sealing, and reception of a plurality of thin film integrated circuits can be carried out continuously by rotating the rollers; thus, the production efficiency can be extremely improved. Further, the thin film integrated circuits can be easily sealed since a pair of rollers opposite to each other is used. | 08-27-2009 |
20090236603 | PROCESS FOR FORMING A WIRING FILM, A TRANSISTOR, AND AN ELECTRONIC DEVICE - A wiring film having excellent adhesion and a low resistance is formed. A barrier film having copper as a main component and containing oxygen is formed on an object to form a film thereon by introducing an oxygen gas into a vacuum chamber in which the object to form a film thereon and sputtering a pure copper target. Then, after the introduction of the oxygen gas is stopped, a low-resistance film made of pure copper is formed by sputtering the pure copper target. Since the barrier film and the low-resistance film have copper as the main component, they can be patterned at a time. Since the low-resistance film has a resistance lower than that of the barrier film, the resistance of the entire wiring film is reduced. Since the barrier layer has high adhesion to glass and silicon, the entire wiring film has high adhesion. | 09-24-2009 |
20090261336 | ARRAY SUBSTRATE FOR DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An array substrate includes a substrate, a data line formed on the substrate, a passivation layer formed on the data line, a gate line including a gate electrode and a capacitor line formed on the passivation layer, a gate insulation layer formed on the gate electrode and the capacitor line, a semiconductor layer formed on the gate insulation layer, a contact hole formed through the passivation layer and the gate insulation layer to expose the data line and a source electrode and a drain electrode formed on the semiconductor layer. The capacitor electrode is overlapped with the data line. The source electrode is connected to the data line through the contact hole and the source electrode and the drain electrode include a transparent conductive material. | 10-22-2009 |
20090272978 | IMAGE DISPLAY SYSTEM AND MANUFACTURING METHOD THEREOF - An image display system and manufacturing method are disclosed. According to the present invention, the image display system comprises a substrate, a switching TFT, a driving TFT, a photo sensor and a capacitor. A buffer layer is formed on a substrate. A separation layer is formed in a first area for forming a switching TFT, but no heat sink layer is formed thereon. A heat sink layer is formed on a second area for forming the driving TFT, the photo sensor and the capacitor, and then, the separation layer is formed thereafter. The present invention can form poly silicon layers with different crystal grain sizes on the first area and on the second area in a single laser crystallization process by utilizing the heat sink phenomenon of ELA with or without the heat sink layer. Therefore, the image display system of the present invention can operate with good luminance uniformity. | 11-05-2009 |
20090283772 | PHOTO SENSITIVE UNIT AND PIXEL STRUCTURE AND LIQUID CRYSTAL DISPLAY PANEL HAVING THE SAME - A pixel structure suitable for being disposed on a substrate is provided. The pixel structure includes a display unit and a photo sensitive unit. The display unit includes an active device and a pixel electrode. The active device is disposed on the substrate, and the pixel electrode is electrically connected to the active device. The photo sensitive unit includes a photocurrent readout unit, a shielding electrode, a photosensitive dielectric layer, and a transparent electrode. The shielding electrode is electrically connected to the photocurrent readout unit, and the photosensitive dielectric layer is disposed on the shielding electrode. The transparent electrode is disposed on the photosensitive dielectric layer that is interposed between the shielding electrode and the transparent electrode. | 11-19-2009 |
20090315035 | LIQUID CRYSTAL DISPLAY DEVICE AND DEFECT REPAIRING METHOD FOR THE SAME - A liquid crystal display device includes a pixel electrode, a thin film transistor, a gate line electrically coupled to the pixel through the thin film transistor and a first auxiliary layer having a first connecting portion overlapped with the pixel electrode and a second connecting portion overlapped with the gate line. The pixel electrode is non-overlapped with the gate line and the first auxiliary layer is electrically insulated from the pixel electrode and the gate line. When a white defect occurs, the pixel electrode is electrically connected to the gate line through the first auxiliary layer thereby repairing the white defect as a black defect. | 12-24-2009 |
20100032677 | DISPLAY DEVICE - A display device includes gate lines; data lines; charge control lines each including a charge control voltage input pad; first and second thin film transistors (TFTs) each including control and input electrodes connected to the gate and data lines, respectively; a first liquid crystal capacitor connected to an output electrode of the first TFT; a second liquid crystal capacitor connected to an output electrode of the second TFT; a charge control TFT including a control electrode and an input electrode connected to one of the charge control lines and the second pixel electrode, respectively; and a charge-down capacitor connected to an output electrode of the charge control TFT. A duration time of a turn-on voltage pulse applied to the charge control TFT is different from a duration time of a turn-on voltage pulse applied to the first TFT transistor or the second TFT. | 02-11-2010 |
20100090223 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The present invention provides a semiconductor device in which a bottom-gate TFT or an inverted stagger TFT arranged in each circuit is suitably constructed in conformity with the functionality of the respective circuits, thereby attaining an improvement in the operating efficiency and reliability of the semiconductor device. In the structure, LDD regions in a pixel TFT are arranged so as not to overlap with a channel protection insulating film and to overlap with a gate electrode by at least a portion thereof. LDD regions in an N-channel TFT of a drive circuit is arranged so as not to overlap with a channel protection insulating film and to overlap with a gate electrode by at least a portion thereof. LDD regions in a P-channel TFT of the drive circuit is arranged so as to overlap with a channel protection insulating film and to overlap with the gate electrode. | 04-15-2010 |
20100155735 | ELECTROPHORETIC DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An electrophoretic display device includes a gate line on a substrate, a common line parallel to the gate line, a gate insulating layer on the gate line and the common line, a data line on the gate insulating layer, the data line crossing the gate line to define a pixel region, a thin film transistor connected to the gate line and the data line, the thin film transistor including a gate electrode, a semiconductor layer, a source electrode and a drain electrode, a first storage electrode extending from the common line, a first passivation layer over the thin film transistor, the gate line and the data line, the first passivation layer exposing the drain electrode, and a pixel electrode on the first passivation layer, the pixel electrode contacting the drain electrode and overlapping the gate line and the data line, wherein the pixel electrode includes a second storage electrode overlapping the first storage electrode, and the first and second storage electrodes form a storage capacitor with the gate insulating layer interposed therebetween. | 06-24-2010 |
20100187536 | ARRAY SUBSTRATE FOR LIQUID CRYSTAL DISPLAY AND METHOD FOR FABRICATING THE SAME - A method for fabricating an array substrate for a liquid crystal display (LCD) is provided. A semiconductor layer and a transparent lower electrode formed on a substrate is provided and covered by a first dielectric layer serving as a gate dielectric layer and a capacitor dielectric layer. A gate electrode and an upper electrode comprising a transparent electrode portion and a metal electrode portion are formed on the first dielectric layer and covered by a second dielectric layer. A source/drain electrode, a planarization layer, and a pixel electrode are sequentially formed on the second dielectric layer, in which the source/drain electrode is electrically connected to the semiconductor layer through the first and second dielectric layers and the pixel electrode is electrically connected to the source/drain electrode through the planarization layer. An array substrate for an LCD is also disclosed. | 07-29-2010 |
20100193798 | SOURCE FOLLOWER CIRCUIT OR BOOTSTRAP CIRCUIT, DRIVER CIRCUIT COMPRISING SUCH CIRCUIT, AND DISPLAY DEVICE COMPRISING SUCH DRIVER CIRCUIT - In the case of using an analog buffer circuit, an input voltage is required to be added a voltage equal to a voltage between the gate and source of a polycrystalline silicon TFT; therefore, a power supply voltage is increased, thus a power consumption is increased with heat. In view of the foregoing problem, the invention provides a depletion mode polycrystalline silicon TFT as a polycrystalline silicon TFT used in an analog buffer circuit such as a source follower circuit. The depletion mode polycrystalline silicon TFT has a threshold voltage on its negative voltage side; therefore, an input voltage does not have to be increased as described above. As a result, a power supply voltage requires no increase, thus a low power consumption of a liquid crystal display device in particular can be realized. | 08-05-2010 |
20100219414 | THIN FILM TRANSISTOR ARRAY PANEL - A thin film transistor array panel, according to an embodiment of the present invention, includes a first data line, a second data line neighboring the first data line, a transistor disposed in a region between the first data line and the second data line, and a pixel electrode disposed close to the second data line among the first and second data lines. An extension of the pixel electrode may cross the second data line, thereby being connected to the transistor. Accordingly, it may not be necessary to use an additional connecting member between the pixel electrode and the data line such that the process may be shortened and the structure of the wiring may be simplified. Also, the spatial utility may be increased to improve the degree of integration. | 09-02-2010 |
20100224881 | ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An organic light emitting diode (OLED) display device and a method of fabricating the same are provided. The OLED display device includes a substrate having a thin film transistor region and a capacitor region, a buffer layer disposed on the substrate, a gate insulating layer disposed on the substrate, a lower capacitor electrode disposed on the gate insulating layer in the capacitor region, an interlayer insulating layer disposed on the substrate, and an upper capacitor electrode disposed on the interlayer insulating layer and facing the lower capacitor electrode, wherein regions of each of the buffer layer, the gate insulating layer, the interlayer insulating layer, the lower capacitor electrode, and the upper capacitor electrode have surfaces in which protrusions having the same shape as grain boundaries of the semiconductor layer are formed. The resultant capacitor has an increased surface area, and therefore, an increased capacitance. | 09-09-2010 |
20100258810 | PIXEL UNIT AND FABRICATING METHOD THEREOF - A method for fabricating a pixel unit is provided. A TFT is formed on a substrate. A protection layer and a patterned photoresist layer are sequentially formed on the substrate entirely. A patterned protection layer is formed by using the patterned photoresist layer as a mask and partially removing the protection layer, wherein the patterned protection layer has an undercut located at a sidewall thereof. A pixel electrode material layer is formed to cover the substrate, the TFT and the patterned photoresist layer, wherein the electrode material layer is disconnected at the undercut and exposes the undercut. A pixel electrode electrically connected to the TFT is formed by lifting off the patterned photoresist layer and parts of the electrode material layer covering the patterned photoresist layer simultaneously through a stripper, wherein the stripper permeates from the undercut to an interface of the patterned photoresist layer and the patterned protection layer. | 10-14-2010 |
20100264421 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - This invention provides a semiconductor device having high operation performance and high reliability. An LDD region | 10-21-2010 |
20100301345 | ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME - An array substrate and method for manufacturing the same is provided, wherein a data line is composed of first and second segments connected by a contact pad. First and second insulation layers are disposed between the first segment of the data line and a shielding electrode. In addition, the first insulation layer is disposed between the second segment of the data line and a gate line in their overlapping area. Accordingly, the coupling effect between the conductive layers can be reduced. For example, the RC delay problem due to parasitic capacitance between the shielding electrode and the data line is solved. As a result of the design of the two insulator layers between the first segment of the data line and the shielding electrode, the shorting between the conductive layers can also be simultaneously solved and the product yield can be increased. | 12-02-2010 |
20110001141 | Semiconductor device, Manufacturing method for the same, and electronic device - A manufacturing method for a semiconductor device, the method including forming a thin film transistor by forming a polysilicon thin film on an insulating substrate, forming a gate electrode via a gate insulating film, and forming source/drain regions and a channel region by ion implantation in the polysilicon thin film by using the gate electrode as a mask, forming an interconnection layer on an interlayer dielectric film covering this thin film transistor and forming a first contact to be connected to the thin film transistor through the interlayer dielectric film, forming a silicon hydronitride film on the interlayer dielectric film so as to cover the interconnection layer, forming a lower electrode on this silicon hydronitride film and forming a second contact to be connected to the interconnection layer through the silicon hydronitride film, and forming a ferroelectric layer on the lower electrode. | 01-06-2011 |
20110068345 | PIXEL UNIT - A pixel unit is disposed on a substrate, and the pixel unit includes a thin film transistor (TFT), a patterned protection layer, and a pixel electrode. The TFT is disposed on the substrate. The patterned protection layer is disposed on the TFT. The patterned protection layer is porous and has an undercut located at a sidewall thereof. The pixel electrode is electrically connected to the TFT. | 03-24-2011 |
20110079786 | Organic light emitting diode display and method of manufacturing the same - An organic light emitting diode display includes a substrate, a semiconductor layer on the substrate, the semiconductor layer including an impurity-doped polycrystalline silicon layer, a first capacitor electrode on the substrate main body, the first capacitor electrode including an impurity-doped polycrystalline silicon layer, and bottom surfaces of the first capacitor electrode and semiconductor layer facing the substrate main body being substantially coplanar, a gate insulating layer on the semiconductor layer and the first capacitor electrode, a gate electrode on the semiconductor layer with the gate insulating layer therebetween, and a second capacitor electrode on the first capacitor electrode with the gate insulating layer therebetween, bottom surfaces of the second capacitor electrode and gate electrode facing the substrate main body being substantially coplanar, and the second capacitor electrode having a smaller thickness than the gate electrode. | 04-07-2011 |
20110079787 | ARRAY SUBSTRATE FOR DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An array substrate for a display device includes: a substrate; first and second gate electrodes of impurity-doped polycrystalline silicon on the substrate; a gate insulating layer on the first and second gate electrodes; first and second active layers of intrinsic polycrystalline silicon on the gate insulating layer, the first and second active layers corresponding to the first and second active layers, respectively; an interlayer insulating layer on the first and second active layers and including first to fourth active contact holes, the first and second active contact holes exposing side portions of the first active layer, the third and fourth active contact holes exposing side portions of the second active layer; first and second ohmic contact layers of impurity-doped amorphous silicon on the interlayer insulating layer, the first ohmic contact layer contacting the first active layer through the first and second active contact holes, the second ohmic contact layer contacting the second active layer through the third and fourth active contact hole; first source and drain electrodes on the first ohmic contact layer and second source and drain electrodes on the second ohmic contact layer; a data line on the interlayer insulating layer, the data line connected to the first source electrode; a first passivation layer on the first source and drain electrodes, the second source and drain electrodes and the data line; a gate line on the first passivation layer, the gate line connected to the first gate electrode and crossing the data line to define a pixel region; a second passivation layer on the gate line; and a pixel electrode on the second passivation layer, the pixel electrode connected to the second drain electrode. | 04-07-2011 |
20110079788 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A charge retention characteristic of a nonvolatile memory transistor is improved. A first insulating film that functions as a tunnel insulating film, a charge storage layer, and a second insulating film are sandwiched between a semiconductor substrate and a conductive film. The charge storage layer is formed of two silicon nitride films. A silicon nitride film which is a lower layer is formed using NH | 04-07-2011 |
20110108844 | ORGANIC LIGHT EMITTING DISPLAY - An organic light emitting display (OLED) is disclosed. The OLED includes a storage capacitor formed in a first region of the substrate, a thin film transistor formed in a second region of the substrate, a first data line capacitor formed in a third region of the substrate, an organic light emitting diode formed on the storage capacitor and the thin film transistor, and a second data line capacitor formed on the data line capacitor. | 05-12-2011 |
20110114960 | Organic light emitting diode display and method for manufacturing the same - An organic light emitting diode display includes a substrate main body, a polysilicon semiconductor layer on the substrate main body, a gate insulating layer covering the semiconductor layer, and a gate electrode and a pixel electrode on the gate insulating layer, the gate electrode and the pixel electrode each including a transparent conductive layer portion with a gate metal layer portion on the transparent conductive layer portion, and the pixel electrode including a light emitting area having the transparent conductive layer portion and a non-light emitting area having both the transparent conductive layer portion and the gate metal layer portion. | 05-19-2011 |
20110147757 | ARRAY SUBSTRATE OF DISPLAY DEVICE - An array substrate of a display device, the array substrate: a substrate having a first region and a second region spaced apart from the first region; a blocking layer located on the substrate; a first electrode located on the blocking layer in the second region; an insulating film located on the blocking layer to cover the first electrode; a second electrode located on the insulating film to overlap the first electrode; and a third electrode overlapping the first electrode between the substrate and the blocking layer. Accordingly, it is possible to reduce an area that is occupied by a storage capacitor in a pixel region and to achieve high luminance by increasing the aperture ratio, by providing a structure and method of increasing a storage capacitance of the same area. | 06-23-2011 |
20110147758 | ACTIVE MATRIX LIQUID CRYSTAL DISPLAY DEVICE - An conductive coating serves as a light shield film and is kept at a give voltage. A metal interconnection is located in the same layer as a source line and connected to the drain of a thin-film transistor. An interlayer insulating film is constituted of at least lower and upper insulating layers and formed between the conductive coating and the source line. According to one aspect of the invention, an auxiliary capacitor is formed by the metal interconnection and the conductive coating serving as both electrodes and at least the lower insulating layer film serving as a dielectric. The auxiliary capacitor is formed in a region of the interlayer insulating film in which the upper insulating layer has been removed by etching. According to another aspect of the invention, the conductive coating has a portion that is in contact with the lower insulating layer in a region where the conductive coating coextends with the metal interconnection. | 06-23-2011 |
20110169008 | Semiconductor Device - A light emitting device capable of performing signal electric current write-in operations at high speed and without dispersion in the characteristics of TFTs structuring pixels influencing the brightness of light emitting elements is provided. The gate length L of a transistor in which an electric current flows during write-in of a signal electric current is made shorter than the gate length L of a transistor in which electric current supplied to EL elements flows during light emission, and high speed write-in is thus performed by having a larger electric current flow than the electric current flowing in conventional EL elements. A converter and driver transistor ( | 07-14-2011 |
20110186852 | DISPLAY DEVICE AND DRIVING METHOD THEREOF - In the respect of an electrical characteristic of a transistor, a channel size W/L of a transistor is preferably designed small in order to decrease an effect of a variation in threshold voltage, while the channel size W/L is preferably designed large in order to widen a saturation region as an operation region of the transistor in the respect of characteristic of a light emitting element. Thus, decreasing an effect of a variation in threshold voltage and widening a saturation region in order not to reduce luminance due to a degradation of the light emitting element are in the relation of trade-off. According to the invention, a current capacity of a driving transistor is increased so as to operate in a wide saturation region. A lighting period control circuit is provided in each pixel for changing a lighting period of each pixel separately. Another configuration of the invention includes a plurality of transistors, for example a first driving transistor and a second driving transistor, and a lighting period control circuit for controlling a lighting period of the light emitting element in each pixel. | 08-04-2011 |
20110198605 | Termination Structure with Multiple Embedded Potential Spreading Capacitive Structures for Trench MOSFET and Method - A termination structure with multiple embedded potential spreading capacitive structures (TSMEC) and method are disclosed for terminating an adjacent trench MOSFET atop a bulk semiconductor layer (BSL) with bottom drain electrode. The BSL has a proximal bulk semiconductor wall (PBSW) supporting drain-source voltage (DSV) and separating TSMEC from trench MOSFET. The TSMEC has oxide-filled large deep trench (OFLDT) bounded by PBSW and a distal bulk semiconductor wall (DBSW). The OFLDT includes a large deep oxide trench into the BSL and embedded capacitive structures (EBCS) located inside the large deep oxide trench and between PBSW and DBSW for spatially spreading the DSV across them. In one embodiment, the EBCS contains interleaved conductive embedded polycrystalline semiconductor regions (EPSR) and oxide columns (OXC) of the OFLDT, a proximal EPSR next to PBSW is connected to an active upper source region and a distal EPSR next to DBSW is connected to the DBSW. | 08-18-2011 |
20110215335 | Organic light emitting diode display and manufacturing method thereof - An organic light emitting diode display includes a substrate main body, a semiconductor layer and a first capacitor electrode on the substrate main body, bottom surfaces of the semiconductor layer and first capacitor electrode being substantially coplanar, and each of the semiconductor layer and first capacitor electrode including an impurity-doped polysilicon layer, a gate insulating layer on the semiconductor layer and the first capacitor electrode, a gate electrode on the semiconductor layer with the gate insulating layer therebetween, and a second capacitor electrode on the first capacitor electrode with the gate insulating layer therebetween, the second capacitor electrode including a convex electrode portion and a concave electrode portion, the concave electrode portion being thinner than each of the convex electrode portion and the gate electrode. | 09-08-2011 |
20110215336 | LAMINATED STRUCTURE, MULTILAYER WIRING BOARD, ACTIVE MATRIX SUBSTRATE, IMAGE DISPLAY APPARATUS, AND METHOD FOR MANUFACTURING LAMINATED STRUCTURE - A method for manufacturing a laminated structure includes a step of supplying a droplet of a functional fluid selectively to at least a first region of a high surface energy area formed in a wettability variable layer of the laminated structure. In the step, the droplet is supplied by inkjet printing, and a center position of the droplet is determined in such a manner as to satisfy both Equations (1) and (2) below: | 09-08-2011 |
20110227087 | SUBSTRATE FOR DISPLAY DEVICE, AND DISPLAY DEVICE - Disclosed is a display device substrate and a display device in which a peripheral circuit is provided in a frame region that can achieve a higher aperture ratio while suppressing the production cost. The display device substrate includes a peripheral circuit provided in a frame region, a first pixel auxiliary capacitance, and a thin film transistor. The first pixel auxiliary capacitance includes an upper electrode and a lower electrode. The peripheral circuit includes wirings. The thin film transistor includes a gate electrode. The upper electrode and the lower electrode are disposed above the gate electrode, and formed of the same material as the wirings. | 09-22-2011 |
20110233557 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - The present invention has an object of providing a light emitting device including an OLED formed on a plastic substrate, which can prevent the degradation due to penetration of moisture or oxygen. On a plastic substrate, a plurality of films for preventing oxygen or moisture from penetrating into an organic light emitting layer in the OLED (hereinafter, referred to as barrier films) and a film having a smaller stress than that of the barrier films (hereinafter, referred to as a stress relaxing film), the film being interposed between the barrier films, are provided. Owing to a laminate structure of a plurality of barrier films, even if a crack occurs in one of the barrier films, the other barrier film(s) can effectively prevent moisture or oxygen from penetrating into the organic light emitting layer. Moreover, the stress relaxing film, which has a smaller stress than that of the barrier films, is interposed between the barrier films, thereby making it possible to reduce a stress of the entire sealing film. As a result, a crack due to stress hardly occurs. | 09-29-2011 |
20110241010 | FLAT PANEL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided are a flat panel display device and a method of manufacturing the same. The flat panel display device includes a first thin-film transistor including a first active layer, a first insulation layer disposed on the first active layer, and a first gate electrode disposed on the first insulation layer; a second thin-film transistor including a second active layer, the first insulation layer disposed on the second active layer, a second insulation layer disposed on the first insulation layer, and a second gate electrode disposed on the second insulation layer, and electrically connected to the first thin-film transistor; and a capacitor electrically connected to the first thin-film transistor and the second thin-film transistor. In the structure as described above, since different numbers of insulation layers are interposed between active layers and gate electrode in each of the first thin-film transistor and the second thin-film transistor, threshold voltages of the first thin-film transistor and the second thin-film transistor are significantly different from each other, and thus it becomes easy to control the threshold voltages of the first thin-film transistor and the second thin-film transistor. | 10-06-2011 |
20110241011 | FIELD-SEQUENTIAL DISPLAY DEVICE - A first transistor in which an image signal is input to one of a first source and a first drain through an image signal line and a first scan signal is input to the first gate through a first scan signal line; a capacitor whose one of two electrodes is electrically connected to the other of the first source and the first drain of the first transistor; a second transistor in which one of a second source and a second drain is electrically connected to the other of the first source and the first drain of the first transistor and a second scan signal is input to a second gate through a second scan signal line; and a liquid crystal element whose first electrode is electrically connected to the other of the second source and the second drain of the second transistor. | 10-06-2011 |
20110241012 | Semiconductor Device and Method of Manufacturing the Same - The present invention relates to a semiconductor device including a circuit composed of thin film transistors having a novel GOLD (Gate-Overlapped LDD (Lightly Doped Drain)) structure. The thin film transistor comprises a first gate electrode and a second electrode being in contact with the first gate electrode and a gate insulating film. Further, the LDD is formed by using the first gate electrode as a mask, and source and drain regions are formed by using the second gate electrode as the mask. Then, the LDD overlapping with the second gate electrode is formed. This structure provides the thin film transistor with high reliability. | 10-06-2011 |
20110266549 | LAMINATED STRUCTURE, PRODUCTION METHOD OF THE SAME, MULTILAYER CIRCUIT BOARD, ACTIVE MATRIX SUBSTRATE, AND ELECTRONIC DISPLAY - A disclosed laminated structure includes a wettability-variable layer containing a wettability-variable material whose surface energy changes when energy is applied thereto and including at least a high-surface-energy area having high surface energy and a low-surface-energy area having low surface energy; and a conductive layer formed on the high-surface-energy area. The high-surface-energy area includes a first area and a second area extending from the first area and having a width smaller than that of the first area. | 11-03-2011 |
20110272702 | ENHANCED CAPACITANCE DEEP TRENCH CAPACITOR FOR EDRAM - A substrate including a stack of a handle substrate, an optional lower insulator layer, a doped polycrystalline semiconductor layer, an upper insulator layer, and a top semiconductor layer is provided. A deep trench is formed through the top semiconductor layer, the upper insulator layer, and the doped polycrystalline semiconductor layer. Exposed vertical surfaces of the polycrystalline semiconductor layer are crystallographically etched to form random facets in the deep trench, thereby increasing the total exposed surface area of the polycrystalline semiconductor layer in the deep trench. A node dielectric and at least one conductive material are deposited to fill the trench and to form a buried strap portion, which constitute a capacitor of an eDRAM. Access transistors and other logic devices can be formed. | 11-10-2011 |
20110297951 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THE SAME - An organic light emitting diode (OLED) display and a manufacturing method thereof, the OLED display includes: a substrate main body; a polycrystalline silicon layer pattern including a polycrystalline active layer formed on the substrate main body and a first capacitor electrode; a gate insulating layer pattern formed on the polycrystalline silicon layer pattern; a first conductive layer pattern including a gate electrode and a second capacitor electrode that are formed on the gate insulating layer pattern; an interlayer insulating layer pattern formed on the first conductive layer pattern; and a second conductive layer pattern including a source electrode, a drain electrode and a pixel electrode that are formed on the interlayer insulating layer pattern. The gate insulating layer pattern is patterned at a same time with any one of the polycrystalline silicon layer pattern and the first conductive layer pattern. | 12-08-2011 |
20110303921 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A display device includes a substrate, a first conductive film pattern including a gate electrode and a first capacitor electrode on the substrate, a gate insulating layer pattern on the first conductive film pattern, a polycrystalline silicon film pattern including an active layer and a second capacitor electrode on the gate insulating layer pattern, an interlayer insulating layer on the polycrystalline silicon film pattern, a plurality of first contact holes through the gate insulating layer pattern and the interlayer insulating layer to expose a portion of the first conductive film pattern, a plurality of second contact holes through the interlayer insulating layer to expose a portion of the polycrystalline silicon film pattern, and a second conductive film pattern including a source electrode, a drain electrode, and a pixel electrode on the interlayer insulating layer. | 12-15-2011 |
20110303922 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A display device and a manufacturing method thereof are provided. The display device includes a substrate, a semiconductor layer formed on the substrate, an organic insulating layer formed on the semiconductor layer, a plurality of conductive wires formed on the organic insulating layer. The organic insulating layer has an open groove that is formed between the conductive wires. | 12-15-2011 |
20110309368 | SEMICONDUCTOR DEVICE - Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented. | 12-22-2011 |
20120001191 | ARRAY SUBSTRATE, METHOD OF MANUFACTURING THE ARRAY SUBSTRATE, AND DISPLAY APPARATUS INCLUDING THE ARRAY SUBSTRATE - An array substrate is disclosed. In one embodiment, the substrate includes 1) a transistor area in which a transistor is formed, 2) a capacitor area in which a capacitor is formed, wherein the capacitor is electrically connected to the transistor and 3) a light transmittance area adjacent to at least one of the transistor area and the capacitor area. The substrate further includes 1) a first insulating layer formed in at least one of the transistor area and the capacitor area, wherein the first insulating layer is not formed in the light transmittance area and 2) a second insulating layer having i) a first portion arranged to substantially overlap with the first insulating layer in the at least one area, and ii) a second portion formed in the light transmittance area. | 01-05-2012 |
20120074419 | LIGHT EMITTING DEVICE AND ELECTRONIC EQUIPMENT - A display device capable of keeping the luminance constant irrespective of temperature change is provided as well as a method of driving the display device. A current mirror circuit composed of transistors is placed in each pixel. A first transistor and a second transistor of the current mirror circuit are connected such that the drain current of the first transistor is kept in proportion to the drain current of the second transistor irrespective of the load resistance value. The drain current of the first transistor is controlled by a driving circuit in accordance with a video signal and the drain current of the second transistor is caused to flow into an OLED, thereby controlling the OLED drive current and the luminance of the OLED. | 03-29-2012 |
20120126237 | ELECTRO-OPTICAL DEVICE AND ELECTRONIC APPARATUS - An electro-optical device is provided with a data line which are provided in a pixel region, a pixel electrode formed from a transparent conductive material which is upper layer than the data line, a storage capacitance electrode which is provided in a layer between the pixel electrode and the data line so as to face the pixel electrode via a capacitance insulation film, an additional capacitance which has a first capacitance electrode and a second capacitance electrode which is formed in the same layer as the pixel electrode and the storage capacitance electrode, respectively. The second capacitance electrode is electrically connected to the data line. | 05-24-2012 |
20120168764 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - An organic light emitting display device and a method for manufacturing the same are provided. The organic light emitting display device includes a substrate including a capacitor region, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer of the capacitor region, a gate insulation film formed on the semiconductor layer, and a transparent electrode formed on the gate insulation film of the capacitor region, wherein a cross-sectional width of the transparent electrode is smaller than a width of the semiconductor layer. | 07-05-2012 |
20120193634 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME - A thin film transistor substrate according to an embodiment of the present invention includes: an insulation substrate; a gate line formed on the insulation substrate; a first interlayer insulating layer formed on the gate line; a data line and a gate electrode formed on the first interlayer insulating layer; a gate insulating layer formed on the data line and gate electrode; a semiconductor formed on the gate insulating layer and overlapping the gate electrode; a second interlayer insulating layer formed on the semiconductor; a first connection formed on the second interlayer insulating layer and electrically connecting the gate line and the gate electrode to each other; a drain electrode connected to the semiconductor; a pixel electrode connected to the drain electrode; and a second connection connecting the data line and the semiconductor to each other. | 08-02-2012 |
20120241750 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME - A semiconductor device includes: a thin film transistor having a gate line ( | 09-27-2012 |
20120248453 | ELECTRO-OPTICAL DEVICE AND ELECTRONIC DEVICE - An object of the present invention is to provide an EL display device, which has a high operating performance and reliability. | 10-04-2012 |
20120286280 | ACTIVE MATRIX LIQUID CRYSTAL DISPLAY DEVICE - A metal interconnection is located in the same layer as a source line and connected to the drain of a thin-film transistor. An interlayer insulating film is constituted of at least lower and upper insulating layers and formed between a conductive coating and the source line. According to one aspect of the invention, an auxiliary capacitor is formed by the metal interconnection and the conductive coating serving as both electrodes and at least the lower insulating layer serving as a dielectric. The auxiliary capacitor is formed in a region of the interlayer insulating film in which the upper insulating layer has been removed by etching. | 11-15-2012 |
20120299006 | SEMICONDUCTOR DEVICE - An object is to prevent light leakage caused due to misregistration even when the width of a black matrix layer is not expanded to a designed value or larger. One embodiment of the present invention is a semiconductor device including a single-gate thin film transistor in which a first semiconductor layer is sandwiched between a bottom-gate electrode and a first black matrix layer. The first semiconductor layer and the first black matrix layer overlap with each other. | 11-29-2012 |
20120313104 | ANALOG MEMORY CELL CIRCUIT FOR THE LTPS TFT-LCD - The present invention provides an analog memory cell circuit for the LTPS TFT-LCD. The circuit comprises the first transistor, second transistor, the third transistor, the fourth transistor, the fifth transistor, the sixth transistor, the seventh transistor, and the capacitor. It comprises a plurality of operation period, wherein the transistors are controlled in accordance with the first scan signal, the second scan signal, and the third scan signal, the output signal is output in the opposite to the output jack. | 12-13-2012 |
20120326156 | Organic light-emitting display apparatus and method of manufacturing organic light-emitting display apparatus - An organic light-emitting display apparatus includes a substrate, a thin-film transistor (TFT) on the substrate, the TFT including an active layer, a gate electrode, a source electrode, and a drain electrode, a first insulating film between the gate electrode and the source electrode and between the gate electrode and the drain electrode, a second insulating film between the first insulating film and the source electrode and between the first insulating film and the drain electrode, the second insulating film including an opening, a first electrode between the first insulating film and the second insulating film, the first electrode including a region corresponding to the opening of the second insulating film, an intermediate layer including an organic light-emitting layer, and a second electrode on the intermediate layer. | 12-27-2012 |
20130001577 | BACKPLANE FOR FLAT PANEL DISPLAY APPARATUS, FLAT PANEL DISPLAY APPARATUS INCLUDING THE SAME, AND METHOD OF MANUFACTURING BACKPLANE FOR FLAT PANEL DISPLAY APPARATUS - In one aspect, a back plane for a flat panel display apparatus include: a substrate; a source electrode and a drain electrode formed on the substrate; a capacitor bottom electrode formed on a same layer as the source/drain electrodes; an active layer formed on the substrate in correspondence to the source electrode and the drain electrode; a blocking layer interposed between the source electrode and the drain electrode and the active layer; a first insulation layer formed on the substrate to cover the active layer; a gate electrode formed on the first insulation layer in correspondence to the active layer; a capacitor top electrode formed on a same layer as the gate electrode in correspondence to the capacitor bottom electrode; and a second insulation layer formed on the first insulation layer to cover the gate electrode and the capacitor top electrode is provided. | 01-03-2013 |
20130001578 | LIGHT-EMITTING DEVICE AND ORGANIC LIGHT EMITTING DISPLAY APPARATUS INCLUDING THE SAME - A light emitting device includes: a substrate; a first electrode on the substrate, the first electrode including a light-transmissive material having a refractive index greater than a refractive index of the substrate; a refraction conversion layer between the substrate and the first electrode, the refraction conversion layer including a first layer having a refractive index greater than the refractive index of the first electrode, a second layer having a refractive index smaller than the refractive index of the first layer, and a third layer having a refractive index smaller than the refractive index of the second layer, wherein the first layer, the second layer, and the third layer are sequentially formed in a direction from the first electrode toward the substrate; a second electrode facing the first electrode; and an organic emissive layer between the first electrode and the second electrode. | 01-03-2013 |
20130015456 | Organic Light Emitting Display Device and Method of Manufacturing the SameAANM You; Chun-GiAACI Yongin-CityAACO KRAAGP You; Chun-Gi Yongin-City KR - In an organic light-emitting display device and a method of manufacturing the same, the display device may include: a thin-film transistor including an active layer, a gate electrode including a first electrode which includes nano-Ag on an insulating layer formed on the active layer and a second electrode on the first electrode, a source electrode, and a drain electrode; an organic light-emitting device including a pixel electrode electrically connected to the thin-film transistor and formed of the same layer as, and using the same material used to form, the first electrode, an intermediate layer including an emissive layer, and an opposite electrode covering the intermediate layer and facing the pixel electrode; and a pad electrode formed of the same layer as, and using the same material used to form, the first electrode in a pad area located outside of a light-emitting area. | 01-17-2013 |
20130015457 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAMEAANM You; Chun-GiAACI Yongin-cityAACO KRAAGP You; Chun-Gi Yongin-city KR - An organic light-emitting display device and a method of manufacturing the same. The organic light-emitting display device includes: a thin-film transistor including an active layer, a gate electrode comprising a first electrode and a second electrode on the first electrode, and source and drain electrodes; an organic light-emitting device including a pixel electrode electrically connected to the thin-film transistor and including nano-Ag, an intermediate layer comprising a light-emitting layer, and an opposite electrode covering the intermediate layer and facing the pixel electrode; and a pad electrode formed on the same plane as and formed of the same material as the first electrode in a pad area outside of a light-emitting area. | 01-17-2013 |
20130015458 | ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICEAANM Ko; Sam-MinAACI DaejeonAACO KRAAGP Ko; Sam-Min Daejeon KRAANM Kim; Young-JooAACI Goyang-siAACO KRAAGP Kim; Young-Joo Goyang-si KR - An organic light emitting diode display device includes: a switching thin film transistor in a pixel region, the switching thin film transistor including a switching semiconductor layer of polycrystalline silicon; a driving thin film transistor connected to the switching thin film transistor, the driving thin film transistor including a driving semiconductor layer of polycrystalline silicon layer; and a light emitting diode connected to the driving thin film transistor, wherein a direction of a channel of the switching thin film transistor is parallel to a first direction, and a direction of a channel of the driving thin film transistor is perpendicular to the first direction. | 01-17-2013 |
20130037817 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display device includes a plurality of sub-pixels each comprising a light-emitting portion, a thin film transistor (TFT), and a capacitor, each of the sub-pixels emitting a different color, wherein the capacitor of at least one of the plurality of sub-pixels extends into at least one adjacent one of the sub-pixels. | 02-14-2013 |
20130043480 | Exposure Device, Exposure Method and Method of Manufacturing Semiconductor Device - The present invention provides a highly controllable device for exposure from the back side and an exposure method, and also provides a method of manufacturing a semiconductor device using the same. The present invention involves exposure with the use of the back side exposure device of which a reflecting means is disposed on the front side of a substrate, apart from a photosensitive thin film surface by a distance X (X=0.1 μm to 1000 μm), and formation of a photosensitive thin film pattern in a self alignment manner, with good controllability, at a position a distance Y away from the end of a pattern. The invention fabricates a TFT using that method. | 02-21-2013 |
20130049001 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - It is an object to manufacture and provide a highly reliable display device including a thin film transistor with a high aperture ratio which has stable electric characteristics. In a manufacturing method of a semiconductor device having a thin film transistor in which a semiconductor layer including a channel formation region is formed using an oxide semiconductor film, a heat treatment for reducing moisture and the like which are impurities and for improving the purity of the oxide semiconductor film (a heat treatment for dehydration or dehydrogenation) is performed. Further, an aperture ratio is improved by forming a gate electrode layer, a source electrode layer, and a drain electrode layer using conductive films having light transmitting properties. | 02-28-2013 |
20130082269 | ELECTRO-OPTICAL APPARATUS AND ELECTRONIC APPARATUS - A capacitance element includes a first capacitance electrode formed over a TFT with a insulating interlayer therebetween, and a second capacitance electrode formed so as to oppose the first capacitance electrode with a first dielectric layer therebetween, the second capacitance electrode being electrically connected to a semiconductor layer of the TFT through a contact hole formed in the insulating interlayer. The second capacitance electrode includes a first conductive layer and a second conductive layer stacked on the first conductive layer. A portion of the first conductive layer overlapping the contact hole is removed, and the second conductive layer and the semiconductor layer are electrically connected to each other through the contact hole. | 04-04-2013 |
20130112983 | PIXEL STRUCTURE AND MANUFACTURING METHOD THEREOF - A pixel structure and a method for manufacturing the same are disclosed. The pixel structure of the present invention is a pixel structure implemented by combining an in-plane switching (IPS) technique and a fringe field switching (FFS) technique. In each pixel structure, two transparent conductive layers are utilized to form a storage capacitor (Cst) such that the capacitance of the storage capacitor can be increased without decreasing an aperture ratio of a display panel, and thereby a feedthrough voltage can be reduced so as to prevent a screen from blinking. | 05-09-2013 |
20130126882 | THIN FILM TRANSISTOR ARRAY SUBSTRATE, ORGANIC LIGHT EMITTING DISPLAY DEVICE COMPRISING THE SAME, AND METHOD OF MANUFACTURING THE SAME - A thin film transistor array substrate includes a thin film transistor including an activation layer, a gate electrode, source and drain electrodes, a first insulation layer between the activation layer and the gate electrode, and a second insulation layer between the gate electrode and the source and drain electrodes, a pixel electrode including a transparent conductive oxide, the pixel electrode being on a portion of the first insulation layer extending from the thin film transistor and being connected to one of the source and drain electrodes via an opening in the second insulation layer, a capacitor including a first electrode and a second electrode, the first electrode being on a same layer as the activation layer and including a transparent conductive oxide, and the second electrode being between the first and second insulation layers, and a third insulation layer covering the source and drain electrodes and exposing the pixel electrode. | 05-23-2013 |
20130134430 | Display Device - Display bright in contrast can be obtained without discrination and flicker in the display device of the direct vision type whose pixel pitches are short to 20 μm or less. A liquid crystal panel is driven through the frame inverse driving method, and the vertical frame frequency is set to 120 Hz or more. Also, each of the pixels is arranged to correspond to one of R, G and B of color filters disposed on a TFT substrate side. | 05-30-2013 |
20130140577 | Semiconductor Device and Method for Preparing the Same - A semiconductor device and a method for preparing the same that can solve crack of a semiconductor film, capacitance electrodes and the like due to stress when forming a source electrode and a drain electrode in a semiconductor device having a thin film transistor and a holding capacitance with three or more capacitance electrodes is provided. Before forming the source electrode and the drain electrode, a crystalline silicon film for relaxing the stress is formed, then a contact hole connecting to the semiconductor film of the thin film transistor is opened, and a metal film to be the source electrode and the drain electrode is formed. | 06-06-2013 |
20130161631 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A display device and method for manufacturing the same are discussed. The display device according to an embodiment includes a substrate, a gate metal line disposed on the substrate, a gate insulating film configured to insulate the gate metal line, a data metal line disposed on the gate insulating film, and a protection film disposed at an area where the gate metal line and the data metal line overlap each other between the gate metal line and the data metal line. | 06-27-2013 |
20130181223 | ELECTRIC CIRCUIT - A transistor has variation in a threshold voltage or mobility due to accumulation of factors such as variation in a gate insulating film which is caused by a difference of a manufacturing process or a substrate to be used and variation in a crystal state of a channel formation region. The present invention provides an electric circuit which is arranged such that both electrodes of a capacitance device can hold a voltage between the gate and the source of a specific transistor. Further, the present invention provides an electric circuit which has a function capable of setting a potential difference between both electrodes of a capacitance device so as to be a threshold voltage of a specific transistor. | 07-18-2013 |
20130207117 | Organic Light Emitting Diode Display - An organic light emitting diode display includes: first gate wires provided on a substrate with a first insulation layer therebetween and extended in a first direction; second gate wires provided on a second insulation layer above the first insulation layer and extended in the first direction; data wires provided on a third insulation layer above the second insulation layer and extended in a second direction crossing the first direction; a pixel circuit connected to the first gate wires, the second gate wires, and the data wires; and an organic light emitting diode connected to the pixel circuit. | 08-15-2013 |
20130240891 | ANALOG CIRCUIT AND DISPLAY DEVICE AND ELECTRONIC DEVICE - The invention provides an analog circuit that decreases an effect of variation of a transistor. By flowing a bias current in a compensation operation, a voltage between the gate and source of the transistor to be compensated is held in a capacitor. In a normal operation, the voltage stored in the compensation operation is added to a signal voltage. As the capacitor holds the voltage according to the characteristics of the transistor to be compensated, the effect of variation can be decreased by adding the voltage stored in the capacitor to the signal voltage. Further, an analog circuit which decreases the effect of variation can be provided by applying the aforementioned basis to a differential circuit, an operational amplifier and the like. | 09-19-2013 |
20130320348 | Analog Memory Cell Circuit for the LTPS TFT-LCD - The present invention provides an analog memory cell circuit for the LTPS TFT-LCD. The circuit comprises the first transistor, second transistor, the third transistor, the fourth transistor, the fifth transistor, the sixth transistor, the seventh transistor, and the capacitor. It comprises a plurality of operation period, wherein the transistors are controlled in accordance with the first scan signal, the second scan signal, and the third scan signal, the output signal is output in the opposite to the output jack. | 12-05-2013 |
20140048811 | SEMICONDUCTOR DEVICE - Solved is a problem of attenuation of output amplitude due to a threshold value of a TFT when manufacturing a circuit with TFTs of a single polarity. In a capacitor ( | 02-20-2014 |
20140048812 | SEMICONDUCTOR DEVICE, ACTIVE MATRIX BOARD, AND DISPLAY DEVICE - Provided is a semiconductor device equipped with: a plurality of switching elements (T | 02-20-2014 |
20140054592 | TFT-LCD ARRAY SUBSTRATE - A pixel unit at a TFT-LCD array substrate includes a thin film transistor, a first storage capacitor, and a second storage capacitor. The first storage capacitor includes a transparent common electrode, a pixel electrode, and a first insulating layer disposed between the transparent common electrode and the pixel electrode. The second storage capacitor includes a first conductive layer, a second conductive layer, and a second insulating layer disposed between the first and second conductive layers. The first conductive layer is connected to the transparent common electrode within the pixel unit. The second conductive layer is connected to the pixel electrode within the pixel unit. | 02-27-2014 |
20140070224 | DISPLAY DEVICE AND ELECTRONIC APPLIANCE - A display device with low manufacturing cost, with low power consumption, capable of being formed over a large substrate, with a high aperture ratio of a pixel, and with high reliability is provided. The display device includes a transistor electrically connected to a light-transmitting pixel electrode and a capacitor. The transistor includes a gate electrode, a gate insulating film over the gate electrode, and a first multilayer film including an oxide semiconductor over the gate insulating film. The capacitor includes the pixel electrode and a conductive electrode formed of a second multilayer film which overlaps with the pixel electrode with a predetermined distance therebetween, and has the same layer structure as the first multilayer film. A channel formation region of the transistor is at least one layer, which is not in contact with the gate insulating film, of the first multilayer film. | 03-13-2014 |
20140097439 | THIN-FILM TRANSISTOR ARRAY SUBSTRATE AND DISPLAY DEVICE INCLUDING THE SAME - A TFT array substrate includes: a first insulation layer over a semiconductor layer; a second insulation layer over a plurality of first gate wires formed on the first insulation layer; a third insulation layer over a plurality of second gate wires formed on the second insulation layer; a cover metal formed over the third insulation layer and contacting the semiconductor layer through a contact hole that passes through the first, second and third insulation layers; a fourth insulation layer over the cover metal; a protection layer formed over the fourth insulation layer; and an anode electrode formed over the protection layer and contacting the cover metal through a via hole that passes through the protection layer, the fourth insulation layer, and the contact hole. | 04-10-2014 |
20140117369 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - An active matrix display device having a pixel structure in which pixel electrodes, gate wirings and source wirings are suitably arranged in the pixel portions to realize a high numerical aperture without increasing the number of masks or the number of steps. The device comprises a gate electrode and a source wiring on an insulating surface, a first insulating layer on the gate electrode and on the source wiring, a semiconductor layer on the first insulating film, a second insulating layer on the semiconductor film, a gate wiring connected to the gate electrode on the second insulating layer, a connection electrode for connecting the source wiring and the semiconductor layer together, and a pixel electrode connected to the semiconductor layer. | 05-01-2014 |
20140131717 | Pixel Unit Structure, Array Substrate and Display Device - The invention discloses a pixel unit structure, an array substrate and a display device and relates to the technical field of liquid crystal displays. The pixel unit structure has a storage capacitor and has a high aperture ratio and a low manufacturing cost of the pixel unit. The pixel unit structure comprises a thin film transistor (TFT) and a first barrier layer, wherein the first barrier layer is opposite to a drain region of an active layer of the TFT, and is connected to a common electrode of an array substrate, thereby a capacitor can be formed between the first barrier layer and the drain region of the active layer. | 05-15-2014 |
20140131718 | TFT ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - A thin film transistor (TFT) array substrate is disclosed and having a pixel region and a peripheral region surrounding the pixel region, and the pixel region comprises horizontal gate lines, longitudinal data lines defining pixel units with the horizontal gate lines, and storage capacitor electrode (Vcom) lines. The peripheral region comprises at least one peripheral common electrode line which is electrically connected with an integrated-circuit (IC) element. The Vcom lines are connected with the peripheral common electrode line through one or more Vcom line IC terminals. | 05-15-2014 |
20140138694 | ARRAY SUBSTRATE FOR DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An array substrate for a display device includes: a substrate; first and second gate electrodes of impurity-doped polycrystalline silicon on the substrate; a gate insulating layer on the first and second gate electrodes; first and second active layers of intrinsic polycrystalline silicon on the gate insulating layer, the first and second active layers corresponding to the first and second active layers, respectively; an interlayer insulating layer on the first and second active layers and including first to fourth active contact holes, the first and second active contact holes exposing side portions of the first active layer, the third and fourth active contact holes exposing side portions of the second active layer; first and second ohmic contact layers of impurity-doped amorphous silicon on the interlayer insulating layer, the first ohmic contact layer contacting the first active layer through the first and second active contact holes, the second ohmic contact layer contacting the second active layer through the third and fourth active contact hole; first source and drain electrodes on the first ohmic contact layer and second source and drain electrodes on the second ohmic contact layer; a data line on the interlayer insulating layer, the data line connected to the first source electrode; a first passivation layer on the first source and drain electrodes, the second source and drain electrodes and the data line; a gate line on the first passivation layer, the gate line connected to the first gate electrode and crossing the data line to define a pixel region; a second passivation layer on the gate line; and a pixel electrode on the second passivation layer, the pixel electrode connected to the second drain electrode. | 05-22-2014 |
20140159045 | SEMICONDUCTOR DEVICE - There is provided a semiconductor device in which fabrication steps can be reduced by constructing a circuit using only TFTs of one conductivity type and in which a voltage amplitude of an output signal can be normally obtained. A capacitance ( | 06-12-2014 |
20140167056 | SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF - A voltage equal to the threshold value of a TFT ( | 06-19-2014 |
20140175446 | ARRAY SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE - An array substrate includes a GOA circuit area and a display area, the GOA circuit area includes a TFT area and a lead-wire area, the display area includes a data line and a gate line. The GOA circuit area is provided with at least one first via and at least one second via, a data-line metal layer is disposed at the bottom of the at least one first via, and a gate-line metal layer is disposed at the bottom of the at least one second via. The GOA circuit area further includes a first electrode and a second electrode, the data-line metal layer is electrically connected to one electrode through the at least one first via, the gate-line metal layer is electrically connected to the other electrode through the at least one second via, such that a capacitor is formed between the first electrode and the second electrode. | 06-26-2014 |
20140175447 | DISPLAY APPARATUS, METHOD OF DRIVING A DISPLAY, AND ELECTRONIC DEVICE - In a display apparatus including a switching transistor, a correction voltage for eliminating an effect of a variation in a characteristic of a driving transistor is stored in a storage capacitor. The switching transistor is disposed between one current terminal of the driving transistor and a light emitting element. The switching transistor turns off during the non-light emission period thereby to electrically disconnect the light emitting element from the one current terminal of the driving transistor thereby preventing a leakage current from flowing through the light emitting element during the period in which the correction unit operates, and thus preventing the correction voltage from having an error due to the leakage current. | 06-26-2014 |
20140183538 | BACK PLANE FOR FLAT PANEL DISPLAY AND METHOD OF MANUFACTURING THE SAME - There are provided a back plane for a flat panel display and a method of manufacturing the back plane, and more particularly, a back plane for an organic light-emitting display device, which enables front light-emitting, and a method of manufacturing the back plane. The back plane for a flat panel display includes: a substrate; a gate electrode on the substrate; a first capacitor on the substrate, the first capacitor comprising a first electrode, an insulation pattern layer on the first electrode, and a second electrode on the insulation pattern layer; a first insulation layer on the substrate to cover the gate electrode and the first capacitor; an active layer on the first insulation layer to correspond to the gate electrode; and a source electrode and a drain electrode on the substrate to contact a portion of the active layer. | 07-03-2014 |
20140209912 | PIXEL UNIT AND METHOD OF MANUFACTURING THE SAME, ARRAY SUBSTRATE AND DISPLAY DEVICE - Embodiments of the present invention provide a method of manufacturing a pixel unit, in which only a single patterning process and a single doping process are performed on a polysilicon layer so as to form heavily doped regions of a thin film transistor and a lower electrode of a storage capacitor respectively, thereby reducing numbers of photolithography and masking processes required to manufacture a LTPS-TFT, shortening time periods for development and mass production, and reducing complexity of processes as well as monitoring difficulty, and decreasing the production cost. The present invention further provides a pixel unit manufactured according to the method, an array substrate and a display device including the same. | 07-31-2014 |
20140217414 | POWER STORAGE DEVICE - A semiconductor device comprises a thin film transistor provided over a substrate having an insulating surface, and an electrode penetrating the substrate. The thin film transistor is provided between a first structural body and a second structural body, which has a higher rigidity than the first structural body, which serve as protectors because the structural bodies have resistance to a pressing force such as a tip of a pen or bending stress applied from outside so malfunction due to the pressing force and the bending stress can be prevented. | 08-07-2014 |
20140264355 | DISPLAY DEVICE, DISPLAY DEVICE DRIVING METHOD, AND ELECTRONIC APPARATUS - A display device includes a pixel array portion and a driving portion for driving the pixel array portion. The pixel array portion includes row scanning lines, column signal lines, and pixels arranged in a matrix form at intersections of the scanning lines and the signal lines. The driving portion includes a write scanner for supplying a control signal to each of the scanning lines by sequentially scanning the scanning lines in each field and a signal selector for supplying a video signal to each of the signal lines in synchronization with the sequential scanning. Each pixel includes a drive transistor for supplying driving current to the light-emitting element in accordance with the video signal stored in a storage capacitor. | 09-18-2014 |
20140306226 | PIXEL STRUCTURE - A pixel structure including a substrate, an active device located on the substrate, a second reflective pattern, and a third reflective pattern is provided. The active device includes a gate, a channel, a source, and a drain. The source and the drain are connected to the channel and are separated from each other. The channel and the gate are stacked in a thickness direction. The second reflective pattern and the third reflective pattern are electrically connected to the drain of the active device. The second reflective pattern has second contact openings. The third reflective pattern is stacked on the second reflective pattern and covers the second contact openings of the second reflective pattern. The second reflective pattern is located between the third reflective pattern and the substrate. Moreover, other kinds of pixel structures are also provided. | 10-16-2014 |
20140332816 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first insulating film formed on a memory cell region of the semiconductor substrate, a first polysilicon layer formed on the first insulating film, and memory cell transistors formed on the first polysilicon layer, each including a charge storage layer, an inter-electrode insulating film and a control gate electrode. The semiconductor device further includes a laminated structure formed on a peripheral circuit region of the semiconductor substrate that includes a second insulating film, a second polysilicon layer, a third insulating film, a third polysilicon layer, a fourth insulating film formed from the same material as a material of the inter-electrode insulating film, and a first electrode formed from the same material as a material of the control gate electrode. The third polysilicon layer, the fourth insulating film, and the first electrode are arranged in the peripheral circuit region to form a capacitance element. | 11-13-2014 |
20140361306 | DISPLAY DEVICE AND ELECTRONIC EQUIPMENT - A display device includes a pixel array section, the pixel array section having pixels arranged in a matrix form, at least one of the pixels including an electro-optical element, a write transistor, a capacitor, a drive transistor, and a switching transistor. A write scan line is disposed for each pixel row of the pixel array section and adapted to convey a write signal to be applied to a gate electrode of the write transistor. The wiring structure of the write scan line does not cross a wiring pattern connected to a gate electrode of the drive transistor. | 12-11-2014 |
20150014691 | SEMICONDUCTOR DEVICE COMPRISING A SECOND ORGANIC FILM OVER A THIRD INSULATING FILM WHEREIN THE SECOND ORGANIC FILM OVERLAPS WITH A CHANNEL FORMATION REGION AND A SECOND CONDUCTIVE FILM - In an active matrix type liquid crystal display device, in which functional circuits such as a shift register circuit and a buffer circuit are incorporated on the same substrate, an optimal TFT structure is provided along with the aperture ratio of a pixel matrix circuit is increased. There is a structure in which an n-channel TFT, with a third impurity region which overlaps a gate electrode, is formed in a buffer circuit, etc., and an n-channel TFT, in which a fourth impurity region which does not overlap the gate electrode, is formed in a pixel matrix circuit. A storage capacitor formed in the pixel matrix circuit is formed by a light shielding film, a dielectric film formed on the light shielding film, and a pixel electrode. Al is especially used in the light shielding film, and the dielectric film is formed anodic oxidation process, using an Al oxide film. | 01-15-2015 |
20150021610 | SEMICONDUCTOR STRUCTURES WITH DEEP TRENCH CAPACITOR AND METHODS OF MANUFACTURE - An integrated FinFET and deep trench capacitor structure and methods of manufacture are disclosed. The method includes forming at least one deep trench capacitor in a silicon on insulator (SOI) substrate. The method further includes simultaneously forming polysilicon fins from material of the at least one deep trench capacitor and SOI fins from the SOI substrate. The method further includes forming an insulator layer on the polysilicon fins. The method further includes forming gate structures over the SOI fins and the insulator layer on the polysilicon fins. | 01-22-2015 |
20150028339 | SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND ELECTRONIC DEVICE - A semiconductor device including: one or more pieces of first wiring having a main wiring section and a bifurcation wiring section; one or a plurality of pieces of second wiring having a trunk wiring section and a plurality of branch wiring sections within a gap region between the main wiring section and the bifurcation wiring section; one or a plurality of transistors each divided and formed into a plurality of pieces, the plurality of branch wiring sections individually functioning as a gate electrode and the one or plurality of transistors having a source region formed within the main wiring section and within the bifurcation wiring section and having a drain region formed between the plurality of branch wiring sections; and one or a plurality of pieces of third wiring electrically connected to the drain region of the one or plurality of transistors. | 01-29-2015 |
20150034954 | SEMICONDUCTOR DEVICE - Solved is a problem of attenuation of output amplitude due to a threshold value of a TFT when manufacturing a circuit with TFTs of a single polarity. In a capacitor ( | 02-05-2015 |
20150041816 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME - The disclosure relates to a semiconductor device including a semiconductor body, having a first surface, a gate electrode structure, which includes polycrystalline silicon, of an IGFET in a first trench extending from the first surface into the semiconductor body. The device also includes a semiconductor element, which is different from the gate electrode structure of the IGFET and includes polycrystalline silicon, in a second trench extending from the first surface into the semiconductor body, wherein the polycrystalline silicon of the IGFET and of the semiconductor element different therefrom ends below a top side of an insulation layer adjoining the first surface of the semiconductor body. | 02-12-2015 |
20150041817 | LIGHT EMITTING DEVICE, DRIVING METHOD OF LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE - By controlling the luminance of light emitting element not by means of a voltage to be impressed to the TFT but by means of controlling a current that flows to the TFT in a signal line drive circuit, the current that flows to the light emitting element is held to a desired value without depending on the characteristics of the TFT. Further, a voltage of inverted bias is impressed to the light emitting element every predetermined period. Since a multiplier effect is given by the two configurations described above, it is possible to prevent the luminance from deteriorating due to a deterioration of the organic luminescent layer, and further, it is possible to maintain the current that flows to the light emitting element to a desired value without depending on the characteristics of the TFT. | 02-12-2015 |
20150048376 | Semiconductor Device, and Display Device and Electronic Device Utilizing the Same - A semiconductor device having a normal function means is provided, in which the amplitude of an output signal is prevented from being decreased even when a digital circuit using transistors having one conductivity is employed. By turning OFF a diode-connected transistor | 02-19-2015 |
20150053986 | Semiconductor device - A semiconductor device capable of high-speed operation. The semiconductor device includes a first transistor, a second transistor, and a capacitor. One of a source and a drain of the first transistor is supplied with a first signal. One of a source and a drain of the second transistor is supplied with a first potential. A gate of the second transistor is supplied with a second signal. A first electrode of the capacitor is electrically connected to the other of the source and the drain of the first transistor. A second electrode of the capacitor is electrically connected to the other of the source and the drain of the second transistor. In a first period, the first signal is low and the second signal is high. In a second period, the first signal is high and the second signal is either low or high. | 02-26-2015 |
20150060863 | ARRAY SUBSTRATE, METHOD FOR FABRICATING THE SAME AND DISPLAY DEVICE - An array substrate, a method for fabricating the same and a display device are disclosed. The array substrate includes a base substrate, and further includes a metal shield layer, a semiconductor layer, a gate insulation layer, a gate metal layer, an interlayer dielectric layer, a source-drain metal layer and a pixel electrode layer sequentially formed on the base substrate. At least one first via hole penetrating to the metal shield layer is formed in the interlayer dielectric layer and the gate insulation layer. The source-drain metal layer is formed in the at least one first via hole and on the interlayer dielectric layer having the at least one first via hole. | 03-05-2015 |
20150060864 | SEMICONDUCTOR DEVICE, DISPLAY DEVICE AND ELECTRONIC DEVICE - When writing a signal current from a current source to a current source circuit, noise occurs in some cases in a wiring through which a current flows, which may cause a potential of the wiring to be outside the normal range. As the potential does not turn back within the normal range easily at this time, writing to the current source circuit is delayed. According to the invention, when the potential becomes outside the normal range due to noise occurring in a wiring through which a current flows when writing a signal current from a current source to a current source circuit, a current is supplied from other than the current source, thereby the potential of the wiring can turn back within the normal range rapidly. | 03-05-2015 |
20150060865 | LIGHT-EMITTING DEVICE AND ELECTRONIC APPARATUS - A light-emitting device includes a drive transistor for controlling the quantity of current supplied to a light-emitting element, a capacitor element electrically connected to a gate electrode of the drive transistor, and an electrical continuity portion for electrically connecting the drive transistor and the light-emitting element, these elements being disposed on a substrate. The electrical continuity portion is disposed on the side opposite to the capacitor element with the drive transistor disposed therebetween. | 03-05-2015 |
20150102349 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - A thin film transistor array substrate including a first TFT including a first active layer, a gate electrode, a first source electrode and a first drain electrode, a second TFT including a second active layer, a floating gate electrode, a control gate electrode, a second source electrode, and a second drain electrode, a capacitor including a first electrode and a second electrode, and a capping layer contacting a portion of the first electrode, the capping layer and the second electrode being on a same layer, is disclosed. A method of manufacturing thin film transistor array substrate is also disclosed. | 04-16-2015 |
20150102350 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - A thin film transistor array panel includes a plurality of pixels on a substrate. Each pixel of the plurality of pixels includes a driving and a switching thin film transistor. The driving thin film transistor includes a first semiconductor including first source and drain regions, a first gate electrode overlapping the first semiconductor, a gate insulating layer between the first semiconductor and the first gate electrode, an oxide layer between the first semiconductor and the gate insulating layer, and first source and drain electrodes. The switching thin film transistor includes a second semiconductor including second source and drain regions, a second gate electrode overlapping the second semiconductor, and second source and drain electrodes. The switching thin film transistor includes the gate insulating layer between the second semiconductor and the second gate electrode. The gate insulating layer contacts an upper portion of the second semiconductor. | 04-16-2015 |
20150102351 | SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND ELECTRONIC DEVICE - A load, a transistor which controls a current value supplied to the load, a capacitor, a power supply line, and first to third switches are provided. After a threshold voltage of the transistor is held by the capacitor, a potential in accordance with a video signal is inputted and a voltage that is the sum of the threshold voltage and the potential is held. Accordingly, variation in current value caused by variation in threshold voltage of the transistor can be suppressed. Therefore, a desired current can be supplied to a load such as a light emitting element. In addition, a display device with a high duty ratio can be provided by changing a potential of the power supply line. | 04-16-2015 |
20150102352 | CAPACITOR STRUCTURE OF GATE DRIVER IN PANEL - A capacitor structure of gate driver in panel (GIP) includes a first metal layer, a first dielectric layer, a second metal layer, a second dielectric layer, a first and second transparent capacitor electrode layers. The first dielectric layer covers the first metal layer. The second metal layer is disposed on the first dielectric layer and coupled to the first metal layer. The second dielectric layer covers the second metal layer. The first transparent capacitor electrode layer is disposed on the first dielectric layer and connected to the second metal layer. The second transparent capacitor electrode layer is disposed on the second dielectric layer and coupled to the first metal layer, in which the second and first transparent capacitor electrode layers are arranged to be stacked in a thickness direction and mutually opposed across the second dielectric layer therebetween. | 04-16-2015 |
20150108482 | THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF REPAIRING SIGNAL LINE OF THE SUBSTRATE - Disclosed are a thin film transistor substrate and a method of repairing a signal line of the thin film transistor substrate. The thin-film transistor substrate includes: a scan line for transferring a scan signal; a light-emission control line for transferring a light-emission control signal; and a capacitor including a first electrode and a second electrode, wherein the second electrode may be provided with a plurality of divided regions, al plurality of bridges coupling the plurality of divided regions to each other, and a plurality of protrusions which overlap at least one of the scan line and the light-emission control line. | 04-23-2015 |
20150108483 | DISPLAY PANEL - A display panel includes a first substrate structure, a second substrate structure and a non-self-luminous display medium layer. The first substrate structure includes a first substrate, a first common electrode, a pixel electrode and a first alignment film. The second substrate structure is disposed opposite to the first substrate structure. The second substrate structure includes a second substrate, a second common electrode and a second alignment film. The non-self-luminous display medium layer is interposed between the first alignment film and the second alignment film. A first capacitance is formed between the first common electrode and the pixel electrode, a second capacitance is formed between the pixel electrode and the second common electrode, and a ratio of the second capacitance to the first capacitance is substantially between 0.7 and 1.3. | 04-23-2015 |
20150108484 | FLEXIBLE DISPLAY DEVICE AND METHOD OF MANUFACTURING THE FLEXIBLE DISPLAY DEVICE - A flexible display device includes a flexible base substrate, a semiconductor pattern, a gate insulation layer, and a gate electrode on the base substrate, the gate insulation layer between the semiconductor pattern and the gate electrode, a conductive pattern including a source electrode and a drain electrode, the source and drain electrodes overlapping respective sides of the semiconductor pattern, an insulation interlayer on the gate insulation layer, between the gate electrode and the conductive pattern, and having at least one stress relief opening at a region exposed by the conductive pattern, and a protection layer on the insulation interlayer and filling the stress relief opening. | 04-23-2015 |
20150108485 | LIGHT-EMITTING DEVICE AND DRIVING METHOD THEREOF - In a light emitting device, luminance irregularities caused by fluctuation in threshold of TFTs for supplying a current to EL elements among pixels hinder the light emitting device from improving the image quality. A voltage equal to the threshold of a TFT | 04-23-2015 |
20150129879 | DISPLAY APPARATUS, METHOD OF DRIVING A DISPLAY, AND ELECTRONIC DEVICE - In a display apparatus including a switching transistor, a correction voltage for eliminating an effect of a variation in a characteristic of a driving transistor is stored in a storage capacitor. The switching transistor is disposed between one current terminal of the driving transistor and a light emitting element. The switching transistor turns off during the non-light emission period thereby to electrically disconnect the light emitting element from the one current terminal of the driving transistor thereby preventing a leakage current from flowing through the light emitting element during the period in which the correction unit operates, and thus preventing the correction voltage from having an error due to the leakage current. | 05-14-2015 |
20150137128 | THIN-FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD FOR REPAIRING THE SAME - The present disclosure disclosed a thin-film transistor array substrate and a method for repairing the same. The array substrate comprises: a substrate; a plurality of common lines, configured on the substrate; a plurality of scan lines and data lines, arranged on the substrate with each scan line and data line perpendicular to each other, to form a plurality of pixel areas; a plurality of pixel elements including a main pixel electrode, a sub pixel electrode, and a charge sharing unit including a charge capacitor which provides a voltage difference between the main pixel electrode and the sub pixel electrode. When the charge capacitor is defective, an upper electrode or a lower electrode of the defective capacitor is disconnected from a circuit connected thereto. The method enables the repairing process faster and simpler, which is different from the traditional repairing means. The pixel element repaired can still work normally. | 05-21-2015 |
20150303224 | PIXEL STRUCTURE OF DISPLAY PANEL - The present invention provides a pixel structure of a display panel and a method for manufacturing the same. The pixel structure comprises a first pixel area and a second pixel area that are adjacent to each other. The first pixel area has a first transparent conductive layer disposed therein and the second pixel area has a second transparent conductive layer disposed therein. The first transparent conductive layer in the first pixel area and the second transparent conductive layer in the second pixel area are located at different heights. The pixel structure of the present invention can efficiently increase an aperture ratio for the pixels on the display panel. | 10-22-2015 |
20150318314 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - An active matrix display device having a pixel structure in which pixel electrodes, gate wirings and source wirings are suitably arranged in the pixel portions to realize a high numerical aperture without increasing the number of masks or the number of steps. The device comprises a gate electrode and a source wiring on an insulating surface, a first insulating layer on the gate electrode and on the source wiring, a semiconductor layer on the first insulating film, a second insulating layer on the semiconductor film, a gate wiring connected to the gate electrode on the second insulating layer, a connection electrode for connecting the source wiring and the semiconductor layer together, and a pixel electrode connected to the semiconductor layer. | 11-05-2015 |
20150333020 | DISPLAY PANEL AND DISPLAY DEVICE - A display panel and a display device are provided, and the display panel comprises a GOA circuit; a first conducting wire and a second conducting wire are disposed in a region outside the GOA circuit; an insulating layer is disposed between the first conducting wire and the second conducting wire; and the first conducting wire, the insulating layer and the second conducting wire form a first capacitor. The display panel can protect the internal signal lines of the GOA circuit and the display panel, and increase the antistatic ability of the display panel and the yield of products. | 11-19-2015 |
20150340385 | CAPACITOR FOR TFT ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME, AND DEVICES ASSOCIATED WITH THE SAME - The present invention discloses a capacitor for a TFT array substrate and a method of manufacturing the same, and the present invention further discloses a shift register, a gate driver, an array substrate and a display device using the capacitor. The TFT array substrate comprises a TFT gate layer, a gate insulation layer, a first ITO layer, a TFT active layer, a TFT source-drain layer, a passivation layer and a second ITO layer formed sequentially on a glass substrate, and the capacitor is consisted of the first ITO layer, the passivation layer and the second ITO layer. In addition, the second ITO layer is connected with the TFT gate layer in a region where the capacitor is located, thereby forming two capacitors connected in parallel; or, the first ITO layer is connected with the TFT gate layer in the region where the capacitor is located, thereby also forming two capacitors connected in parallel. With the present invention, a space occupied by the capacitor for the TFT array substrate is reduced, and a size of the shift register is reduced, so as to be suitable for a narrow frame design. | 11-26-2015 |
20150340386 | ELECTRO-OPTIC DEVICE AND ELECTRONIC EQUIPMENT - Deterioration of display quality due to a difference of leak current in each pixel is suppressed. | 11-26-2015 |
20150340389 | METHOD FOR MANUFACTURING ARRAY SUBSTRATE, ARRAY SUBSTRATE, AND DISPLAY DEVICE - The present invention provides a method for manufacturing an array substrate, an array substrate, and a display device. The method for manufacturing an array substrate, including a step of forming a thin film transistor and a storage capacitor on a substrate, the thin film transistor including a gate, a source, and a drain, and the storage capacitor including a first pole plate and a second pole plate, wherein, arranging the source, the drain, and the first pole plate in a single layer through implanting dopant ions into an amorphous silicon layer formed on the substrate by one ion-implantation process, and through crystallizing an amorphous silicon material forming the amorphous silicon layer and activating the dopant ions by a laser irradiation process. Accordingly, process steps are simplified and a process cost is reduced greatly, and the performances of the array substrate and the display device are increased. | 11-26-2015 |
20150362805 | ELECTROOPTICAL DEVICE, METHOD OF MANUFACTURING ELECTROOPTICAL DEVICE, AND ELECTRONIC APPARATUS - The liquid crystal device includes a first base material | 12-17-2015 |
20150364499 | SUBSTRATE STRUCTURE AND MANUFACTURING METHOD THEREOF - A substrate structure including a flexible substrate, a gate line, a gate, an inorganic insulation layer, a semiconductor layer, a source, a drain, an inorganic passivation layer and an organic insulation layer is provided. The gate is electrically connected to the gate line. The inorganic insulation layer covers the gate and exposes a portion of the flexible substrate. The semiconductor layer is disposed on the inorganic insulation layer and disposed corresponding to the gate. The source and the drain extend from the inorganic insulation layer to the semiconductor layer and expose a portion of the semiconductor layer. The inorganic passivation layer covers portions of the source and the drain and directly contacts to the semiconductor layer exposed by the source and the drain. The organic insulation layer covers the source, the drain, the inorganic passivation layer and the flexible substrate exposed by the inorganic insulation layer. | 12-17-2015 |
20150364505 | THIN-FILM TRANSISTOR ARRAY SUBSTRATE WITH CONNECTION NODE AND DISPLAY DEVICE INCLUDING THE SAME - A thin-film transistor (TFT) array substrate including: a first conductive layer selected from an active layer, a gate electrode, a source electrode, and a drain electrode of a TFT; a second conductive layer in a layer different from the first conductive layer; and a connection node coupling the first conductive layer to the second conductive layer. Here, the TFT array has a node contact hole formed by: a first contact hole in the first conductive layer; and a second contact hole in the second conductive layer, the second contact hole being integral with the first contact hole and not being separated from the first contact hole by an insulating layer, and at least a portion of the connection node is in the node contact hole. | 12-17-2015 |
20150372015 | DISPLAY SUBSTRATE, DISPLAY DEVICE AND METHOD FOR MANUFACTURING DISPLAY SUBSTRATE - The present disclosure relates to a display substrate, a display device and a method for manufacturing the display substrate. The display substrate comprises a substrate, and a plurality of gate lines, a plurality of data lines and a plurality of common electrode lines which are formed above the substrate. The plurality of gate lines and the plurality of data lines are crossed to form a plurality of pixel units. Each of the plurality of pixel units comprises a thin film transistor and a pixel electrode electrically connected to the thin film transistor. The display substrate further comprises connection electrodes located above the substrate. Each of the connection electrodes connects two adjacent common electrode lines. | 12-24-2015 |
20150372026 | TOUCH SENSOR, TOUCH PANEL, TOUCH PANEL MODULE, AND DISPLAY DEVICE - Objects are to simplify a process for manufacturing a touch panel, reduce manufacturing costs of a touch panel, provide a thin touch panel, increase the visibility of a touch panel, increase the detection sensitivity of a touch panel, provide a lightweight touch panel, and provide a highly reliable touch panel. A touch sensor includes a first substrate, a transistor, a first conductive film, a second conductive film, an insulating film, a third conductive film, and a second substrate. The first conductive film has a region placed between the first substrate and the second conductive film. The insulating film has a region placed between the first conductive film and the second conductive film. The first conductive film, the second conductive film, and the insulating film form a capacitor. The transistor is electrically connected to the second conductive film. The second conductive film is electrically connected to the third conductive film. | 12-24-2015 |
20160013219 | PIXEL STRUCTURE AND MANUFACTURING METHOD THEREOF | 01-14-2016 |
20160013326 | Pixel Unit, Array Substrate and Manufacturing Method Thereof, and Display Device | 01-14-2016 |
20160020333 | POLYSILICON THIN-FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD FOR PREPARING THE SAME, AND DISPLAY DEVICE - The present invention provides a polysilicon thin-film transistor array substrate and a method for preparing the same, and a display device, wherein the method comprises a step of forming a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode and a drain electrode of the polysilicon thin-film transistor, and a first electrode and a second electrode of a storage capacitor, and a gate line and a data line, wherein, the semiconductor layer and the first electrode of the storage capacitor are formed via a one-time patterning process, and the gate electrode, the gate line and the second electrode of the storage capacitor are formed via a one-time patterning process. By the solution of the invention, the number of mask plates used can be lowered, so that the process can be simplified, and the production cost can be lowered. | 01-21-2016 |
20160027813 | ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF AND DISPLAY APPARATUS - An array substrate and a manufacturing method thereof, and a display apparatus comprising the array substrate are provided. The array substrate comprises a base substrate, and a thin film transistor and a storing capacitor provided on the base substrate, the thin film transistor comprises a gate, a source, a drain and a gate insulation layer provided between the source and drain and the gate, the storing capacitor comprises a first plate, a second plate and a dielectric layer provided between the first plate and the second plate, wherein, both of the first plate and the second plate are formed of metal material, and the dielectric layer is formed of the same material as the gate insulation layer. In the array substrate of the present invention, the charging speed of the storing capacitor can be improved and the display quality of the display apparatus comprising the array substrate is further improved. | 01-28-2016 |
20160027815 | LIGHT EMITTING DEVICE, DRIVING METHOD OF LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE - By controlling the luminance of light emitting element not by means of a voltage to be impressed to the TFT but by means of controlling a current that flows to the TFT in a signal line drive circuit, the current that flows to the light emitting element is held to a desired value without depending on the characteristics of the TFT. Further, a voltage of inverted bias is impressed to the light emitting element every predetermined period. Since a multiplier effect is given by the two configurations described above, it is possible to prevent the luminance from deteriorating due to a deterioration of the organic luminescent layer, and further, it is possible to maintain the current that flows to the light emitting element to a desired value without depending on the characteristics of the TFT. | 01-28-2016 |
20160027857 | DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - Provided are a display apparatus and a method of manufacturing the display apparatus. The display apparatus includes: a substrate having a major surface; and a capacitor disposed over the substrate. The capacitor includes a first electrode, and a second electrode disposed over the first electrode. The second electrode includes a first region, a second region and an opening when viewed in a direction perpendicular to the major surface. The first region has a first thickness, and a second region has a second thickness that is greater than the first thickness. | 01-28-2016 |
20160033832 | TFT-LCD ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - The present invention provides a TFT-LCD array substrate and a manufacturing method thereof, which comprises a gate line and a data line, wherein a pixel electrode and a thin film transistor are formed in a pixel region defined by the gate line and the data line, a first connecting electrode is further set in the pixel region, connected to the gate line through a first contact hole, and connected to the data line as well. By those mentioned above, the distance between the two electrodes of the storage capacitor is reduced such that the storage capacitance per unit area is increased in the present invention. | 02-04-2016 |
20160033833 | PIXEL ARRAY - A pixel array includes pixel units. A gate of a sharing switch device is electrically connected to a signal line. A source of the sharing switch device is electrically connected to an active device and a sub-pixel electrode. A terminal of a first capacitance Cpp is electrically connected to the source of the sharing switch device and the sub-pixel electrode. Another terminal of the first capacitance Cpp is electrically connected to a main pixel electrode of the next pixel unit. A terminal of a second capacitance Ccc is electrically connected to a drain of the sharing switch device. Another terminal of the second capacitance Ccc is electrically connected to the main pixel electrode of the next pixel unit. 5%≦(Ccc/Cpp)≦25%. | 02-04-2016 |
20160043114 | LOW TEMPERATURE POLY-SILICON THIN FILM TRANSISTOR, ARRAY SUBSTRATE AND THEIR MANUFACTURING METHODS - Disclosed are an LTPS TFT, an array substrate and their manufacturing methods. The method for manufacturing the LTPS TFT includes a step of forming an active layer and an ohmic contact layer on a substrate, which includes: forming an a-Si layer on the substrate; injecting foreign ions into a region of the a-Si layer where the ohmic contact layer is to be formed by ion injection, so as to form an initial ohmic contact layer at the region where the ohmic contact layer is to be formed; subjecting the a-Si layer obtained after the ion injection to excimer laser annealing treatment so as to crystallize the a-Si layer into a poly-silicon layer and enable the initial ohmic contact layer to form the final ohmic contact layer; and patterning the poly-silicon layer obtained after the excimer laser annealing treatment, so as to form the active layer. | 02-11-2016 |
20160043159 | DISPLAY APPARATUS - A display apparatus includes: a thin-film transistor including a source electrode, a drain electrode, and a gate electrode; a data line in a layer different from the source electrode, the drain electrode, and the gate electrode, wherein the data line is configured to transmit a data signal; and a shield layer between the data line and a component of the thin-film transistor. | 02-11-2016 |
20160043212 | THIN FILM TRANSISTOR, ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE - The present invention provides a low-temperature polysilicon thin film transistor and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display device. The present invention is related to display technology. The low-temperature polysilicon thin film transistor comprises: an active layer disposed on a substrate, and a source electrode and a drain electrode respectively connected to the active layer, the active layer comprises a source contact region, a drain contact region, and a semiconductor region disposed between the source contact region and the drain contact region, the source contact region and the drain contact region are both conductive, both of the source contact region and the drain contact region include a semiconductor substrate and ions distributed in the semiconductor substrate, the source electrode covers the source contact region directly, and the drain electrode covers the drain contact region directly. | 02-11-2016 |
20160062192 | LIQUID CRYSTAL DISPLAY - An LCD comprises a first scan line, a second scan line, a first data line, a second data line, a pixel area, a first sub-pixel electrode and a first active element. The first scan line has a first sidewall; the second scan line has a second sidewall adjacent to the first sidewall; and the first data line has a third sidewall intersecting with the first sidewall and the second sidewall. The second data line has a fourth sidewall adjacent to the third sidewall. The pixel area is an area defined by the first sidewall, the second sidewall, the third sidewall and the fourth sidewall. The first sub-pixel is partially disposed in the pixel area. The first active element has a first electrode electrically connected to the first sub-pixel electrode through a first via hole, wherein a portion of the first via hole is disposed out of the pixel area. | 03-03-2016 |
20160071918 | Display Device and Driving Method Thereof - To provide a display device and a driving method thereof, where variations in the threshold voltage of transistors can be compensated and thus variations in luminance of light-emitting elements can be suppressed. In a first period, initialization is performed; in a second period, a voltage based on the threshold voltage of a first transistor is held in first and second storage capacitors; in a third period, a voltage based on a video signal voltage and the threshold voltage of the first transistor is held in the first and second storage capacitors; and in a fourth period, voltages held in the first and second storage capacitors are applied to a gate terminal of the first transistor to supply a current to a light-emitting element, so that the light-emitting element emits light. Through the operation process, a current obtained by compensating variations in the threshold voltage of the first transistor can be supplied to the light-emitting element, thereby variations in luminance can be suppressed. | 03-10-2016 |
20160077395 | ELECTRO-OPTICAL DEVICE AND ELECTRONIC APPARATUS - An electro-optical device includes a first light shielding film; a transistor element formed on the first light shielding film to overlap the first light shielding film; a second light shielding film formed on the transistor element to overlap the transistor element and electrically connected to an input terminal of the transistor element; a transparent conductive film extended toward an upper layer side of the second light shielding film in an opening region, through which light penetrates, of the display region; a dielectric film formed on the transparent conductive film in the opening region; and a transparent pixel electrode formed on the dielectric film in the opening region, constituting a storage capacitor together with the transparent conductive film and the dielectric film, and having a transparent pixel electrode which is electrically connected to the transistor element. | 03-17-2016 |
20160079286 | THIN-FILM TRANSISTOR ARRAY SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE - A thin-film transistor (TFT) array substrate including at least one TFT, the at least one TFT including a semiconductor layer including a source region and a drain region having a first doping concentration on a substrate, a channel region between the source and drain regions and having a second doping concentration, the second doping concentration being lower than the first doping concentration, and a non-doping region extending from the source and drain regions; a gate insulating layer on the semiconductor layer; a gate electrode on the gate insulating layer and at least partially overlapping the channel region; and a source electrode and a drain electrode insulated from the gate electrode and electrically connected to the source region and the drain region, respectively. | 03-17-2016 |
20160093646 | THIN FILM TRANSISTOR SUBSTRATE, DISPLAY APPARATUS COMPRISING THE SAME, METHOD OF MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE, AND METHOD OF MANUFACTURING DISPLAY APPARATUS - A thin film transistor (TFT) substrate, a flat display apparatus including the TFT substrate, a method of manufacturing the TFT substrate, and a method of manufacturing the flat display apparatus, the thin film transistor (TFT) substrate including a substrate; a first gate electrode on the substrate, the first gate electrode including a first branch electrode and a second branch electrode that are spaced apart from one another; a polysilicon layer on the first gate electrode and insulated from the first gate electrode; and a second gate electrode on the polysilicon layer, the second gate electrode being insulated from the polysilicon layer and overlying the first and second branch electrodes. | 03-31-2016 |
20160099259 | Wiring Layer and Manufacturing Method Therefor - To provide a miniaturized semiconductor device with low power consumption. A method for manufacturing a wiring layer includes the following steps: forming a second insulator over a first insulator; forming a third insulator over the second insulator; forming an opening in the third insulator so that it reaches the second insulator; forming a first conductor over the third insulator and in the opening; forming a second conductor over the first conductor; and after forming the second conductor, performing polishing treatment to remove portions of the first and second conductors above a top surface of the third insulator. An end of the first conductor is at a level lower than or equal to the top level of the opening. The top surface of the second conductor is at a level lower than or equal to that of the end of the first conductor. | 04-07-2016 |
20160099356 | SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE - A multi-gate structure is used and a width (d | 04-07-2016 |
20160116785 | LIQUID CRYSTAL DISPLAY - A liquid crystal display includes first and second sub-pixels charged with the same voltage during a first period. The voltage charged in the second sub-pixel is decreased after the first period. Since the voltage level of the first sub-pixel is different from the voltage level of the second sub-pixel after the first period, liquid crystal molecules disposed corresponding to the first sub-pixel are aligned in a direction different from that of liquid crystal molecules disposed corresponding to the second sub-pixel. Thus, a side viewing angle of the liquid crystal display is improved. | 04-28-2016 |
20160118456 | DISPLAY DEVICE, METHOD FOR DRIVING THE SAME, AND ELECTRONIC APPARATUS - A display device including a pixel array unit having a matrix of pixels each configured such that an anode electrode of an organic electroluminescent element is connected to a source electrode of a drive transistor, a gate electrode of the drive transistor is connected to a source or drain electrode of a writing transistor, and a storage capacitor is connected between the gate and source electrodes of the drive transistor, scanning lines and power supply lines for individual pixel rows, and signal lines for individual pixel columns. A video signal reference potential is supplied to the signal lines for a period during which a scanning signal is supplied to the scanning lines during driving of pixels in a preceding row. During threshold correction for the drive transistor in a current pixel, the video signal reference potential and a potential of the cathode electrode of the organic electroluminescent element are equal. | 04-28-2016 |
20160118505 | Display Device And Semiconductor Device - An object is to provide a display device with a high aperture ratio or a semiconductor device in which the area of an element is large. A channel formation region of a TFT with a multi-gate structure is provided under a wiring that is provided between adjacent pixel electrodes (or electrodes of an element). In addition, a channel width direction of each of a plurality of channel formation regions is parallel to a longitudinal direction of the pixel electrode. In addition, when a channel width is longer than a channel length, the area of the channel formation region can be increased. | 04-28-2016 |
20160126262 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A display device is disclosed. In one aspect, the device includes a plurality of pixels. Each of the pixels includes a first thin-film transistor (TFT) formed over a substrate and comprising gate electrode, a source electrode, and a drain electrode. Each pixel also includes a storage capacitor formed over the substrate, wherein the storage capacitor includes first and second electrodes, and a dielectric layer interposed between the first and second electrodes. The first electrode, the dielectric layer, and the second electrode have substantially the same pattern. | 05-05-2016 |
20160133655 | ELECTRO-OPTICAL DEVICE, ELECTRONIC APPARATUS, AND METHOD FOR MANUFACTURING ELECTRO-OPTICAL DEVICE - An electro-optical device includes an element substrate main body, a first capacitance electrode that is arranged above the element substrate main body, and has a first metal film and a second metal film which is stacked onto the first metal film, a first protective insulating film that is arranged so as to cover a side wall of the first metal film, and expose at least a portion of a side wall of the second metal film, a dielectric film that is arranged throughout the side wall of the second metal film which is exposed from the first protective insulating film, and over the second metal film, and a second capacitance electrode that is arranged throughout the dielectric film on the second metal film, and over the dielectric film which is arranged in the side wall of the second metal film exposed from the first protective insulating film. | 05-12-2016 |
20160133656 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF - To provide a liquid crystal display device having high quality display by obtaining a high aperture ratio while securing a sufficient storage capacitor (Cs), and at the same time, by dispersing a load (a pixel writing-in electric current) of a capacitor wiring in a timely manner to effectively reduce the load. A scanning line is formed on a different layer from a gate electrode and the capacitor wiring is arranged so as to be parallel with a signal line. Each pixel is connected to the individually independent capacitor wiring via a dielectric. Therefore, variations in the electric potential of the capacitor wiring caused by a writing-in electric current of a neighboring pixel can be avoided, whereby obtaining satisfactory display images. | 05-12-2016 |
20160155762 | THIN FILM TRANSISTOR SUBSTRATE | 06-02-2016 |
20160172387 | LTPS ARRAY SUBSTRATE | 06-16-2016 |
20160178972 | TRANSPARENT DISPLAY PANEL | 06-23-2016 |
20160178981 | FRINGE FIELD SWITCHING MODE LIQUID CRYSTAL DISPLAY DEVICE | 06-23-2016 |
20160181289 | ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, DISPLAY DEVICE, THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF | 06-23-2016 |
20160190166 | DISPLAY APPARATUS - A display apparatus includes a substrate having a display area defined in a non rectangular shape, and a non-display area surrounding the display area; an image display portion including a plurality of gate lines, a plurality of data lines and a plurality of pixels prepared on the display area; a display pad portion prepared at one side of the substrate; a plurality of data link lines for connecting the plurality of data lines to the display pad portion; and one or more dummy capacitors prepared in some data link lines among the plurality of data link lines. | 06-30-2016 |
20160190167 | THIN-FILM TRANSISTOR PANEL - Embodiments of the present disclosure provide a thin-film transistor (TFT) panel structured to prevent the deterioration of image quality due to the luminance change of backlight. According to an embodiment, the TFT panel includes: an insulating substrate; a first gate line and a first data line which are formed on the insulating substrate to be insulated from each other and cross each other; a first subpixel electrode which is formed on the insulating substrate and connected to the first gate line and the first data line by a first TFT; a second subpixel electrode which is formed on the insulating substrate and separated from the first subpixel electrode; a connecting electrode which is directly connected to any one of the first and second subpixel electrodes and capacitively coupled to the other one of the first and second subpixel electrodes; a semiconductor pattern which is formed between the connecting electrode and the insulating substrate; and a light-shielding pattern which is formed between the semiconductor pattern and the insulating substrate, is overlapped by the connecting electrode, and blocks light. | 06-30-2016 |
20160190220 | MANUFACTURE METHOD OF AMOLED BACK PLATE AND STURCTURE THEREOF - The present invention provides a manufacture method of an AMOLED back plate and a structure thereof. The manufacture method of the AMOLED back plate is: sequentially deposing a buffer layer ( | 06-30-2016 |
20160197105 | ELECTRONIC DEVICE AND ELECTRONIC APPARATUS | 07-07-2016 |
20160204178 | SEMICONDUCTOR DEVICE | 07-14-2016 |
20160204184 | DISPLAY DEVICE | 07-14-2016 |
20160380008 | BACKPLANE FOR DISPLAY APPARATUS - A backplane for a display apparatus includes a substrate including a display area and a non-display area; a first transistor formed on the display area; and a second transistor formed on the non-display area, wherein a first active layer includes a first channel area, a first source area disposed on one side of the first channel area, a first drain area disposed on the other side of the first channel area, and a low-density doped area and a halo doped area that are adjacent to both ends of the first gate electrode, and the second active layer includes a second channel area, a second source area disposed on one side of the second channel area, and a second drain area disposed on the other side of the second channel area. | 12-29-2016 |
20180026054 | HYBRID HIGH-K DIELECTRIC MATERIAL FILM STACKS COMPRISING ZIRCONIUM OXIDE UTILIZED IN DISPLAY DEVICES | 01-25-2018 |
20180026055 | HYBRID HIGH-K DIELECTRIC MATERIAL FILM STACKS COMPRISING ZIRCONIUM OXIDE UTILIZED IN DISPLAY DEVICES | 01-25-2018 |
20190148415 | METHOD FOR MAKING MICRO LED DISPLAY PANEL AND PIXEL DRIVING CIRCUIT OF SAME | 05-16-2019 |
20190148416 | LAYER STACK FOR DISPLAY APPLICATIONS | 05-16-2019 |
20190148604 | COLOR-FILTER DEVICE | 05-16-2019 |