| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 257042000 | SEMICONDUCTOR IS SELENIUM OR TELLURIUM IN ELEMENTAL FORM | 31 |
| 20080217610 | THIN FILM TRANSISTOR HAVING N-TYPE AND P-TYPE CIS THIN FILMS AND METHOD OF MANUFACTURING THE SAME - Provided is a thin film transistor (TFT) which uses CIS (CuInSe | 09-11-2008 |
| 20090008636 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device that includes a phase change material for protecting the device from failure caused by overheating. The semiconductor device is adapted to detect a rapid increase in current due to heat and also adapted to break a circuit in the detected rapid increase in current by depositing a phase change material inside or outside a cell actually operated in the semiconductor device. | 01-08-2009 |
| 20090057661 | Method for Chemical Mechanical Planarization of Chalcogenide Materials - A method and associated composition for chemical mechanical planarization of a chalcogenide-containing substrate (e.g., germanium/antimony/tellurium (GST)-containing substrate) are described. The composition and method afford low defect levels (e.g., scratches incurred during polishing) as well as low dishing and local erosion levels on the chalcogenide-containing substrate during CMP processing. | 03-05-2009 |
| 20090134388 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF SAME - A semiconductor device having a metal insulator semiconductor field effect transistor (MISFET) with interface resistance-reduced source/drain electrodes is disclosed. This device includes a p-type MISFET formed on a semiconductor substrate. The p-MISFET has a channel region in the substrate, a gate insulating film on the channel region, a gate electrode on the gate insulating film, and a pair of laterally spaced-apart source and drain electrodes on both sides of the channel region. These source/drain electrodes are each formed of a nickel (Ni)-containing silicide layer. The p-MISFET further includes an interface layer which is formed on the substrate side of an interface between the substrate and each source/drain electrode. This interface layer contains magnesium (Mg), calcium (Ca) or barium (Ba) therein. A fabrication method of the semiconductor device is also disclosed. | 05-28-2009 |
| 20090146141 | METHOD FOR MANUFACTURING N-TYPE AND P-TYPE CHALCOGENIDE MATERIAL, DOPED HOMOJUNCTION CHALCOGENIDE THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME - The present invention provides a doped homojunction chalcogenide thin film transistor and a method of fabricating the same, comprising forming an N-type chalcogenide layer constituting a channel layer on a substrate, forming and patterning a diffusion prevention layer on the upper part of the N-type chalcogenide layer, and forming a P-type chalcogenide layer constituting source and drain regions by depositing and diffusing Te alloy on the N-type chalcogenide layer. With the present invention, a thin film transistor can be fabricated using chalcogenide material having N-type conductivity and chalcogenide material having P-type conductivity. | 06-11-2009 |
| 20090194764 | Multi-layer storage node, resistive random access memory device including a multi-layer storage node and methods of manufacturing the same - A multi-layer storage node, resistive random access memory device and methods of manufacturing the same are provided. The resistive random access memory device includes a switching structure and a storage node connected to the switching structure. The storage node includes a lower electrode, a first layer, a second layer, and an upper electrode that may be sequentially stacked. The first layer may be formed on the lower electrode and includes at least one of oxygen (O), sulfur (S), selenium (Se), tellurium (Te) and combinations thereof. The second layer may be formed on the first layer and includes at least one of copper (Cu), silver (Ag) and combinations thereof. The second layer may be formed of a material having an oxidizing power less than that of the first layer. The upper electrode may be formed on the second layer. | 08-06-2009 |
| 20090236594 | METHOD FOR FABRICATING AN INORGANIC NANOCOMPOSITE - An inorganic nanocomposite is prepared by obtaining a solution of a soluble hydrazine-based metal chalcogenide precursor; dispersing a nanoentity in the precursor solution; applying a solution of the precursor containing the nanoentity onto a substrate to produce a film of the precursor containing the nanoentity; and annealing the film of the precursor containing the nanoentity to produce the metal chalcogenide nanocomposite film comprising at least one metal chalcogenide and at least one molecularly-intermixed nanoentity on the substrate. The process can be used to prepare field-effect transistors and photovoltaic devices. | 09-24-2009 |
| 20090242880 | THERMALLY STABILIZED ELECTRODE STRUCTURE - Memory devices and methods for manufacturing are described herein. A memory device as described herein includes a first electrode layer, a second electrode layer, and a thermal isolation structure comprising a layer of thermal isolation material between the first and second electrode layers. The first and second electrode layers and the thermal isolation structure define a multi-layer stack having a sidewall. A sidewall conductor layer comprising a sidewall conductor material is on the sidewall of the multi-layer stack. The sidewall conductor material has an electrical conductivity greater than that of the thermal isolation material. A memory element comprising memory material is on the second electrode layer. | 10-01-2009 |
| 20090250691 | PHASE CHANGE MEMORY ELEMENT AND METHOD FOR FORMING THE SAME - A phase change memory and method for fabricating the same are provided. The phase change memory element includes: a substrate; rectangle-shaped dielectric patterns formed on the substrate and parallel with each other; electric conductive patterns partially covering a first sidewall and the top surface of the dielectric pattern and the substrate to expose the first sidewall and a second sidewall of the dielectric pattern, wherein the electric conductive patterns covering the same dielectric pattern are apart from each other; a phase change spacer formed on the substrate and directly in contact with the exposed first and second sidewalls of the dielectric patterns, wherein the two adjacent electric conductive patterns covering the same dielectric pattern are electrically connected by the phase change spacer; and a dielectric layer formed on the substrate. | 10-08-2009 |
| 20090250692 | Radiation Detector With Asymmetric Contacts - A room temperature radiation detector is made from a semi-insulating Cd | 10-08-2009 |
| 20090321730 | COMPOSITIONS OF DOPED, CO-DOPED AND TRI-DOPED SEMICONDUCTOR MATERIALS - Semiconductor materials suitable for being used in radiation detectors are disclosed. A particular example of the semiconductor materials includes tellurium, cadmium, and zinc. Tellurium is in molar excess of cadmium and zinc. The example also includes aluminum having a concentration of about 10 to about 20,000 atomic parts per billion and erbium having a concentration of at least 10,000 atomic parts per billion. | 12-31-2009 |
| 20100019238 | HYDRAZINE-FREE SOLUTION DEPOSITION OF CHALCOGENIDE FILMS - A method of depositing a film of a metal chalcogenide including the steps of: contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing additive to form a solution of a complex thereof; applying the solution of the complex onto a substrate to produce a coating of the solution on the substrate; removing the solvent from the coating to produce a film of the complex on the substrate; and thereafter annealing the film of the complex to produce a metal chalcogenide film on the substrate. Also provided is a process for preparing an isolated hydrazinium-based precursor of a metal chalcogenide as well as a thin-film field-effect transistor device using the metal chalcogenides as the channel layer. | 01-28-2010 |
| 20100072465 | BARIUM COPPER SULFUR FLUORIDE TRANSPARENT CONDUCTIVE THIN FILMS AND BULK MATERIAL - The present invention is generally directed to a bulk barium copper sulfur fluoride (BCSF) material made by combining Cu | 03-25-2010 |
| 20100072466 | Electronic Circuit with Repetitive Patterns Formed by Shadow Mask Vapor Deposition and a Method of Manufacturing an Electronic Circuit Element - An electronic circuit with repetitive patterns formed by shadow mask vapor deposition includes a repetitive pattern of electronic circuit elements formed on a substrate. Each electronic circuit element includes the following elements in the desired order of deposition: a first semiconductor segment, a second semiconductor segment, a first metal segment, a second metal segment, a third metal segment, a fourth metal segment, a fifth metal segment, a sixth metal segment, a first insulator segment, a second insulator segment, a third insulator segment, a seventh metal segment, an eighth metal segment, a ninth metal segment and a tenth metal segment. All of the above segments may be deposited via a shadow mask deposition process. The electronic circuit element may be an element of an array of like electronic circuit elements. | 03-25-2010 |
| 20100090213 | ONE-TIME PROGRAMMABLE DEVICES INCLUDING CHALCOGENIDE MATERIAL AND ELECTRONIC SYSTEMS INCLUDING THE SAME - A method of programming a one-time programmable device is provided. A switching device disposed in a substrate is turned on and a program current is applied to a fuse electrically connected to the switching device, thereby cutting the fuse. The fuse includes a first electrode electrically connected to the switching device, a second electrode spaced apart from the first electrode, and a chalcogenide pattern disposed between the first and second electrodes. Related one-time programmable devices, phase change memory devices and electronic systems are also disclosed. | 04-15-2010 |
| 20100102306 | MULTI-LEVEL MEMORY CELL AND MANUFACTURING METHOD THEREOF - A multi-level memory cell having a bottom electrode, a first dielectric layer, a plurality of memory material layers, a plurality of second dielectric layers, and an upper electrode is provided. The bottom electrode is disposed in a substrate. The first dielectric layer is disposed on the substrate and has an opening exposing the bottom electrode. The memory material layers are stacked on a sidewall of the first dielectric layer exposed by the opening and are electrically connected to the bottom electrode. The second dielectric layers are respectively disposed between every adjacent two memory material layers and are located on the sidewall of the first dielectric layer. The upper electrode is disposed on the memory material layers. A manufacturing method of the multi-level memory cell is further provided. A multi-bit data can be stored in a single memory cell, and both the process complexity and the cost are reduced. | 04-29-2010 |
| 20100193780 | METHOD OF FORMING MEMORY CELL USING GAS CLUSTER ION BEAMS - A variable resistance memory cell structure and a method of forming it. The method includes forming a first electrode, forming an insulating material over the first electrode, forming a via in the insulating material to expose a surface of the first electrode, forming a heater material within the via using gas cluster ion beams, forming a variable resistance material within the via, and forming a second electrode such that the heater material and variable resistance material are provided between the first and second electrodes. | 08-05-2010 |
| 20100327276 | Method and system for passivation of defects in mercury cadmium telluride based optoelectric devices - Apparatus and method to improve the operating parameters of HgCdTe-based optoelectric devices by the addition of hydrogen to passivate dislocation defects. A chamber and a UV light source are provided. The UV light source is configured to provide UV radiation within the chamber. The optoelectric device, which may comprise a HgCdTe semiconductor, is placed into the chamber and may be held in position by a sample holder. Hydrogen gas is introduced into the chamber. The material is irradiated within the chamber by the UV light source with the device and hydrogen gas present within the chamber to cause absorption of the hydrogen into the material. | 12-30-2010 |
| 20100327277 | SEMICONDUCTOR DEVICE WITH A BULK SINGLE CRYSTAL ON A SUBSTRATE - Device and method of forming a device in which a substrate ( | 12-30-2010 |
| 20110163305 | RADIATION DETECTOR - An X-ray detector | 07-07-2011 |
| 20110163306 | RADIATION DETECTOR - A radiation detector of this invention has a curable synthetic resin film covering exposed surfaces of a radiation sensitive semiconductor layer, a carrier selective high resistance film and a common electrode, in which a material allowing no chloride to mix in is used in a manufacturing process of the curable synthetic resin film. This prevents pinholes and voids from being formed by chlorine ions in the carrier selective high resistance film and semiconductor layer. Also a protective film which does not transmit ionic materials may be provided between the exposed surface of the common electrode and the curable synthetic resin film, thereby to prevent the carrier selective high resistance film from being corroded by chlorine ions included in the curable synthetic resin film, and to prevent an increase of dark current flowing through the semiconductor layer. | 07-07-2011 |
| 20110315978 | RADIATION DETECTOR, AND A RADIOGRAPHIC APPARATUS HAVING THE SAME - The construction of this invention includes an active matrix substrate, an amorphous selenium layer, a high resistance layer, a gold electrode layer, an insulating layer and an auxiliary plate laminated in this order. In one aspect of the present invention, the insulating layer has an inorganic anion exchanger added thereto in order to provide a radiation detector which prevents void formation and pinhole formation in the amorphous semiconductor layer and carrier selective high resistance film, without accumulating electric charges on the auxiliary plate. The inorganic anion exchanger adsorbs chloride ions in the insulating layer, thereby preventing destruction of X-ray detector due to the chloride ions drawn to the gold electrode layer. | 12-29-2011 |
| 20120146016 | Wafer-Scale X-Ray Detector And Method Of Manufacturing The Same - A wafer-scale x-ray detector and a method of manufacturing the same are provided. The wafer-scale x-ray detector includes: a seamless silicon substrate electrically connected to a printed circuit substrate; a chip array having a plurality of pixel pads formed on a central region thereof and a plurality of pin pads formed at edges thereof on the seamless silicon substrate; a plurality of pixel electrodes formed to correspond to the pixel pads; vertical wirings and horizontal wirings formed to compensate a difference of regions expanded towards the pixel electrodes from the pixel pads between the chip array and the pixel electrodes; a redistribution layer having an insulating layer to separate the vertical wirings and the horizontal wirings; and a photoconductor layer and a common electrode which cover the pixel electrodes on the redistribution layer. | 06-14-2012 |
| 20120168742 | BARIUM COPPER SULFUR FLUORIDE TRANSPARENT CONDUCTIVE THIN FILMS AND BULK MATERIAL - A bulk barium copper sulfur fluoride (BCSF) material can be made by combining Cu | 07-05-2012 |
| 20130099226 | PHOTOELECTRIC CONVERSION DEVICE - It is aimed to provide a photoelectric conversion device having high adhesion between a first semiconductor layer and an electrode layer as well as high photoelectric conversion efficiency. A photoelectric conversion device comprises an electrode layer, a first semiconductor layer located on the electrode layer and comprising a chalcopyrite-based compound semiconductor of group I-III-VI and oxygen, and a second semiconductor layer located on the first semiconductor layer and forming a pn junction with the first semiconductor layer. In the photoelectric conversion device, the first semiconductor layer has a higher molar concentration of oxygen in a part located on the electrode layer side with respect to a center portion in a lamination direction of the first semiconductor layer than a molar concentration of oxygen in the whole of the first semiconductor layer. | 04-25-2013 |
| 20140103330 | ULTRA-SENSITIVE GAS SENSORS BASED ON TELLURIUM-SINGLE WALLED CARBON NANOTUBE HYBRID NANOSTRUCTURES - A gas sensor operable at ambient conditions, the sensor includes functionalized feather-like tellurium (Te) nanostructures on single-walled carbon nanotube (SWNTs) networks. | 04-17-2014 |
| 20140131698 | CHANNEL LAYER AND THIN FILM TRANSISTOR INCLUDING THE SAME - A channel layer may include a plurality of transition metal dichalcogenide (TMD) material layers and an insulator layer between a pair of the plurality of TMD material layers. | 05-15-2014 |
| 20140167030 | VERTICAL TYPE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - A vertical memory device and a method of fabricating the same are provided. The vertical type semiconductor device includes a common source region formed in a cell area of a semiconductor substrate. A channel region is formed on the common source region. The channel region has a predetermined height and a first diameter. A drain region is formed on the channel region. The drain region has a predetermined height and a second diameter larger than the first diameter. A first gate electrode surrounding the channel region. | 06-19-2014 |
| 20160041274 | X-RAY DETECTOR - An X-ray detector may include: a thin film transistor (TFT) unit; and/or a capacitor unit. The capacitor unit may include two or more storage capacitors. The TFT unit may include: a gate electrode on one region of a substrate; a gate insulating layer on the gate electrode; an active layer on the gate insulating layer; and/or a source electrode and a drain electrode respectively on sides of the active layer. | 02-11-2016 |
| 20160172410 | Semiconductor Device and Electronic Device | 06-16-2016 |
| 20180026070 | Semiconductor Device and Electronic Device | 01-25-2018 |
