| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 257025000 | Employing resonant tunneling | 13 |
| 20080246022 | Method for Producing Planar Transporting Resonance Heterostructures - An electron transport device, including at least one transport layer in which at least one periodic dislocation and/or defect array is produced, and a mechanism for guiding electrons in the transport layer. | 10-09-2008 |
| 20080246023 | Transistor Based on Resonant Tunneling Effect of Double Barrier Tunneling Junctions - The present invention relates to a transistor based on resonant tunneling effect of double barrier tunneling junctions comprising: a substrate, an emitter, a base, a collector and a first and a second tunneling barrier layers; wherein the first tunneling barrier layer is located between the emitter and the base, and the second tunneling barrier layer is located between the base and the collector; furthermore, the junction areas of the tunneling junctions which are formed between the emitter and the base and between the base and collector respectively are 1 μm | 10-09-2008 |
| 20080265242 | CMOS IMAGE SENSOR WITH ENHANCED PHOTOSENSITIVITY - A photosensitive device is disclosed which comprises a semiconductor substrate, at least one reverse biased device, such as a P-N junction diode formed in the semiconductor substrate, and at least one photosensitive layer disposed above the semiconductor substrate and substantially covering the reverse biased device, the photosensitive layer releasing electrons and holes when struck by photons, wherein the photon generated electrons and holes in the photosensitive layer reach the reverse biased device and create a combination current therein when a light shines thereon. | 10-30-2008 |
| 20090008630 | TUNNELING TRANSISTOR WITH BARRIER - The invention suggests a transistor ( | 01-08-2009 |
| 20090008631 | NANOWIRE TUNNELING TRANSISTOR - A transistor comprises a nanowire ( | 01-08-2009 |
| 20090032805 | Microresonator systems and methods of fabricating the same - Various embodiments of the present invention are related to microresonator systems that can be used as a laser, a modulator, and a photodetector and to methods for fabricating the microresonator systems. In one embodiment, a microresonator system comprises a substrate having a top surface layer, at least one waveguide embedded within the substrate, and a microdisk having a top layer, an intermediate layer, a bottom layer, current isolation region, and a peripheral annular region. The bottom layer of the microdisk is in electrical communication with the top surface layer of the substrate and is positioned so that at least a portion of the peripheral annular region is located above the at least one waveguide. The current isolation region is configured to occupy at least a portion of a central region of the microdisk and has a relatively lower refractive index and relatively larger bandgap than the peripheral annular region. | 02-05-2009 |
| 20090127543 | VERTICAL GATE-DEPLETED SINGLE ELECTRON TRANSISTOR - A vertical gate-depleted single electron transistor (SET) is fabricated on a conducting or insulating substrate. A plurality of lightly doped basic materials and tunneling barriers are fabricated on top of a substrate, wherein at least two of the layers of basic materials sandwich the layers of tunneling barriers and at least two of the layers of tunneling barriers sandwich at least one of the layers of basic materials. A mesa is fabricated on top of the layers of basic materials and tunneling barriers, and has an undercut shape. An ohmic contact is fabricated on top of the mesa, and one or more gate Schottky contacts are fabricated on top of the layers of lightly doped basic materials and tunneling barriers. A quantum dot is induced by gate depletion, when a source voltage is set as zero, a drain voltage is set to be less than 0.1, and a gate voltage is set to be negative. The depletion region expands toward the center of the device and forms a lateral confinement to the quantum well, wherein a quantum dot is obtained. Because the size of the quantum dot is so small, the Coulomb charging energy achieved is large enough to let the device operate at room temperature. | 05-21-2009 |
| 20090250688 | MOLECULAR QUANTUM INTERFERENCE APPARATUS AND APPLICATIONS OF SAME - A molecular quantum interference device for use in molecular electronics. In one embodiment, the device includes a molecular quantum interference unit having a first terminal group and a second terminal group between which quantum interference affects electrical conduction, a molecular spacer having a first terminal group and a second terminal group and coupled to the molecular quantum interference unit through a chemical bonding between the first terminal group of the molecular spacer and the second terminal group of the molecular quantum interference unit, a first electrode electrically coupled to the molecular quantum interference unit and configured to supply charge carriers to or receive charge carriers from the molecular quantum interference unit, and a second electrode electrically coupled to the molecular spacer and configured to receive charge carriers from or supply charge carriers to the molecular spacer. | 10-08-2009 |
| 20090315019 | Optical device having a quantum-dot structure - Method of manufacturing an optical device, and an optical device, the optical device having one or more layers ( | 12-24-2009 |
| 20090321719 | NOVEL MATERIAL AND PROCESS FOR INTEGRATED ION CHIP - An integrated ion chip for a large scale quantum device of interconnected ion (or other charged particles) traps each holding a small number of particles for a finite period of time, in a preferred embodiment using sapphire as the substrate, having an internal trapping, translation, and quantum manipulation zones and having a first set of electrodes and a second set of electrodes for trapping ions and for quantum manipulations, in a preferred embodiment using silicon carbide (and materials of similar characteristics) as a core structure material, and utilizing unique fabrication processes using micromachining and thin film techniques. | 12-31-2009 |
| 20100102298 | SCHOTTKY BARRIER QUANTUM WELL RESONANT TUNNELING TRANSISTOR - A semiconductor transistor device includes one or more conductive base regions, a first semiconductor barrier region, a second semiconductor barrier region, a conductive emitter region, and a conductive collector region. The first semiconductor barrier region or the second semiconductor barrier region has a dimension smaller than 100 Å. A first Schottky barrier junction is formed at the interface of the first semiconductor barrier region and the one or more conductive base regions. A second Schottky barrier junction is formed at the interface of the second semiconductor barrier region and the one or more conductive base regions. A third Schottky barrier junction is formed at the interface of the conductive emitter region and the first semiconductor barrier region. A fourth Schottky barrier junction is formed at the interface of the conductive collector region and the second semiconductor barrier region. | 04-29-2010 |
| 20100133513 | NANOPARTICLE / NANOTUBE-BASED NANOELECTRONIC DEVICES AND CHEMICALLY-DIRECTED ASSEMBLY THEREOF - According to some embodiments, the present invention provides a nanoelectronic device based on a nanostructure that may include a nanotube with first and second ends, a metallic nanoparticle attached to the first end, and an insulating nanoparticle attached to the second end. The nanoelectronic device may include additional nanostructures so a to form a plurality of nanostructures comprising the first nanostructure and the additional nanostructures. The plurality of nanostructures may arranged in a network comprising a plurality of edges and a plurality of vertices, wherein each edge comprises a nanotube and each vertex comprises at least one insulating nanoparticle and at least one metallic nanoparticle adjacent the insulating nanoparticle. The combination of at least one edge and at least one vertex comprises a diode. The device may be an optical rectenna. | 06-03-2010 |
| 20120248413 | ENERGY CONVERSION DEVICE WITH SELECTIVE CONTACTS - A resonant tunneling device includes a first semiconductor material with an energy difference between valence and conduction bands of E | 10-04-2012 |
