Class / Patent application number | Description | Number of patent applications / Date published |
2526203R0 | BARRIER LAYER DEVICE COMPOSITIONS | 44 |
20090267015 | Method for Protecting Substrate - The present invention provides a novel method for preventing or reducing color degradation or color change of a substrate over time, and is characterized by arranging at least one positively-charged substance selected from the group consisting of ( | 10-29-2009 |
20140027664 | TERNARY TUNGSTEN BORIDE NITRIDE FILMS AND METHODS FOR FORMING SAME - Ternary tungsten boride nitride (WBN) thin films and related methods of formation are provided. The films are have excellent thermal stability, tunable resistivity and good adhesion to oxides. Methods of forming the films can involve thermal atomic layer deposition (ALD) processes in which boron-containing, nitrogen-containing and tungsten-containing reactants are sequentially pulsed into a reaction chamber to deposit the WBN films. In some embodiments, the processes include multiple cycles of boron-containing, nitrogen-containing and tungsten-containing reactant pulses, with each cycle including multiple boron-containing pulses. | 01-30-2014 |
2526203T0 | Thermoelectric | 29 |
20090250651 | DICHALCOGENIDE THERMOELECTRIC MATERIAL - A dichalcogenide thermoelectric material having a very low thermal conductivity in comparison with a conventional metal or semiconductor is described. The dichalcogenide thermoelectric material has a structure of Formula 1 below: | 10-08-2009 |
20100025616 | MECHANICAL STRENGTH & THERMOELECTRIC PERFORMANCE IN METAL CHALCOGENIDE MQ (M=Ge,Sn,Pb and Q=S, Se, Te) BASED COMPOSITIONS - Thermoelectric eutectic and off-eutectic compositions comprising a minor phase in a thermoelectric matrix phase are provided. These compositions include eutectic and near eutectic compositions where the matrix phase is a chalcogenide (S, Se, Te) of Ge, Sn, or Pb or an appropriate alloy of these compounds and at least one of Ge, Ge | 02-04-2010 |
20110017935 | THERMOELECTRIC CONVERSION MATERIAL AND ITS MANUFACTURING METHOD, AND THERMOELECTRIC CONVERSION DEVICE USING THE SAME - Disclosed is a new thermoelectric conversion material represented by the chemical formula 1: Bi | 01-27-2011 |
20110042607 | THERMOELECTRIC COMPOSITIONS AND PROCESS - A process for producing bulk thermoelectric compositions containing nanoscale inclusions is described. The thermoelectric compositions have a higher figure of merit (ZT) than without the inclusions. The compositions are useful for power generation and in heat pumps for instance. | 02-24-2011 |
20120138843 | MECHANOCHEMICAL SYNTHESIS AND THERMOELECTRIC PROPERTIES OF MAGNESIUM SILICIDE AND RELATED ALLOYS - The present invention provides a method of making a substantially phase pure compound including a cation and an anion. The compound is made by mixing in a ball-milling device a first amount of the anion with a first amount of the cation that is less than the stoichiometric amount of the cation, so that substantially all of the first amount of the cation is consumed. The compound is further made by mixing in a ball-milling device a second amount of the cation that is less than the stoichiometric amount of the cation with the mixture remaining in the device. The mixing is continued until substantially all of the second amount of the cation and any unreacted portion of anion X are consumed to afford the substantially phase pure compound. | 06-07-2012 |
20130009088 | MULTIPLE INORGANIC COMPOUND STRUCTURE AND USE THEREOF, AND METHOD OF PRODUCING MULTIPLE INORGANIC COMPOUND STRUCTURE - An multiple inorganic compound structure according to the present invention is a multiple inorganic compound structure including a main crystalline phase, which main crystalline phase contains a sub crystalline phase inside the main crystalline phase, the sub crystalline phase having a non-metallic element arrangement identical to that of the main crystalline phase. A metal element identical to at least one metallic element included in the sub crystalline phase is formed as a solid solution in the main crystalline phase, and its crystal orientation in a main crystalline phase part is identical to that of the sub crystalline phase. | 01-10-2013 |
20130119295 | CLATHRATE COMPOUND, THERMOELECTRIC MATERIAL, AND METHOD FOR PRODUCING THERMOELECTRIC MATERIAL - Provided is a clathrate compound represented by a following chemical formula, for example, Ba | 05-16-2013 |
20130153811 | METHOD OF MANUFACTURING THERMOELECTRIC MATERIAL, THERMOELECTRIC MATERIAL, AND THERMOELECTRIC CONVERSION ELEMENT - The method of manufacturing the thermoelectric material including a plurality of phases that are phase-separated from a supersaturated solid solution includes: a process of performing a mechanical alloying treatment to a starting raw material that is prepared with a composition deviated from a composition range existing in an equilibrium state of a compound to generate the supersaturated solid solution; and a process of performing phase separation into the plurality of phases and solidification by heating and pressing the supersaturated solid solution, or by further performing a heat treatment according to the circumstances. | 06-20-2013 |
20130240775 | METHOD OF PRODUCTION OF NANOCOMPOSITE THERMOELECTRIC CONVERSION MATERIAL - A method of producing a nanocomposite thermoelectric conversion material which has a high thermoelectric conversion performance without modifying the surface of the phonon scattering particles and thereby preventing the conventional defects due to an organic phase derived from a modifier. The method produces a nanocomposite thermoelectric conversion material comprised of a Bi | 09-19-2013 |
20130284967 | THERMOELECTRIC MATERIAL HAVING REDUCED THERMAL CONDUCTIVITY, AND THERMOELECTRIC DEVICE AND MODULE INCLUDING THE SAME - A thermoelectric material including: a thermoelectric matrix including grains with a composition of Formula 1: | 10-31-2013 |
20140231696 | High ZT Bismuth-Doped Perovskite Thermoelectrics - A bismuth-doped perovskite thermoelectric, comprising (Bi | 08-21-2014 |
20140306143 | METHOD OF PRODUCING THERMOELECTRIC MATERIAL - A process for manufacturing a nanocomposite thermoelectric material having a plurality of nanoparticle inclusions. The process includes determining a material composition to be investigated for the nanocomposite thermoelectric material, the material composition including a conductive bulk material and a nanoparticle material. In addition, a range of surface roughness values for the insulating nanoparticle material that can be obtained using current state of the art manufacturing techniques is determined. Thereafter, a plurality of Seebeck coefficients, electrical resistivity values, thermal conductivity values and figure of merit values as a function of the range of nanoparticle material surface roughness values is calculated. Based on these calculated values, a nanocomposite thermoelectric material composition or ranges of compositions is/are selected and manufactured. | 10-16-2014 |
20140361212 | METHOD OF MANUFACTURING THERMOELECTRIC MATERIAL AND THERMOELECTRIC MATERIAL PREPARED BY THE METHOD AND THERMOELECTRIC GENERATOR - Provided is a method of manufacturing a Pb—Te based thermoelectric material, the method comprising: forming a Pb—Te based by mixture mixing element lead, element tellurium and a dopant; melting and then quenching the mixture; and obtaining a thermoelectric sintered body by hot-pressing a molded body obtained after the quenching. | 12-11-2014 |
20150069284 | NANOCOMPOSITE THERMOELECTRIC CONVERSION MATERIAL AND METHOD OF MANUFACTURING THE SAME - A nanocomposite thermoelectric conversion material includes: crystal grains of a matrix phase material; and a grain boundary phase that is formed in an interface between the crystal grains and includes an insulating material. In the interface between the crystal grains of the matrix phase material, an element that forms the matrix phase material and an element that forms the insulating material are bonded by a chemical bond. | 03-12-2015 |
20150311418 | Powdered Materials Attached with Molecular Glue - Embodiments of the invention relate generally to methods of consolidating ball milled semiconductors. In one embodiment, the invention provides a thermoelectric material with enhanced thermoelectric (TE) performance, the thermoelectric material including a population of ball-milled particles mixed with a population of inorganic nanocrystals, wherein the inorganic nanocrystals act as a glue. | 10-29-2015 |
20150325771 | PRACTICAL METHOD OF PRODUCING AN AEROGEL COMPOSITE CONTINUOUS THIN FILM THERMOELECTRIC SEMICONDUCTOR MATERIAL BY MODIFIED MOCVD - A method is disclosed of constructing a composite material structure, comprised of an aerogel substrate, which is then overlaid throughout its interior with an even and continuous thin layer film of doped thermoelectric semiconductor such that electrical current is transmitted as a quantum surface phenomena, while the cross-section for thermal conductivity is kept low, with the aerogel itself dissipating that thermal conductivity. In one preferred embodiment this is achieved using a modified metal-organic chemical-vapor deposition (MOCVD) process in the gas phase, with the assist of microwave heating after the reactant gases have evenly diffused throughout the interior of the aerogel substrate. | 11-12-2015 |
20150349188 | AFFECTING THE THERMOELECTRIC FIGURE OF MERIT (ZT) AND THE POWER FACTOR BY HIGH PRESSURE, HIGH TEMPERATURE SINTERING - A method for increasing the ZT of a semiconductor, involves creating a reaction cell including a semiconductor in a pressure-transmitting medium, exposing the reaction cell to elevated pressure and elevated temperature for a time sufficient to increase the ZT of the semiconductor, and recovering the semiconductor with an increased ZT. | 12-03-2015 |
20150372212 | TE-BASED THERMOELECTRIC MATERIAL HAVING COMPLEX CRYSTAL STRUCTURE BY ADDITION OF INTERSTITIAL DOPANT - This invention relates to a Te-based thermoelectric material having stacking faults by addition of an interstitial dopant, including unit cells configured such that A-B-A-C-A elements are stacked to five layers, in which A element of a terminal of a unit cell and A element of a terminal of another unit cell are repeatedly stacked by a van der Waals interaction, wherein an interstitial element as the dopant is located at an interstitial position between the repeatedly stacked A elements adjacent to each other, thus generating stacking faults of the repeatedly stacked unit cells to thereby form a twin as well as a complex crystal structure different from the unit cells (where A is Te or Se, B is Bi or Sb, and C is Bi or Sb). | 12-24-2015 |
20150376016 | RAPID REDUCTION OF SODIUM OCCUPANCY IN TYPE II SILICON CLATHRATE BY CHEMICAL ETCHING - The invention relates to a method to produce a type II silicon clathrate, a method to produce a type I clathrate, and a method to decrease sodium in silicon clathrates. | 12-31-2015 |
20150376071 | NANOHETEROSTRUCTURE AND METHOD FOR PRODUCING THE SAME - A nanoheterostructure includes a first inorganic component and a second inorganic component one of which is a matrix, and the other of which is three-dimensionally and periodically arranged in the matrix, and has a three-dimensional periodic structure whose average value of one unit length of a repeated structure is 1 nm to 100 nm. | 12-31-2015 |
20150380623 | THERMOELECTRIC CONVERSION MATERIAL - A thermoelectric conversion material expressed by a chemical formula X | 12-31-2015 |
20160172566 | THERMOELECTRIC MATERIALS | 06-16-2016 |
20160172567 | METHOD FOR MANUFACTURING THERMOELECTRIC MATERIALS | 06-16-2016 |
20160172568 | THERMOELECTRIC MATERIALS AND THEIR MANUFACTURING METHOD | 06-16-2016 |
20160197257 | Method for Producing a Thermoelectric Material | 07-07-2016 |
20170236989 | SOLUTION BASED SYNTHESIS OF COPPER-ARSENIC-CHALCOGEN DERIVED NANOPARTICLES | 08-17-2017 |
20180026170 | THERMOELECTRIC MATERIAL AND METHOD FOR PRODUCING THERMOELECTRIC MATERIAL | 01-25-2018 |
20190144277 | NOVEL COMPOUND SEMICONDUCTOR AND USE THEREOF | 05-16-2019 |
20190148613 | THERMOELECTRIC CONVERSION MATERIAL AND THERMOELECTRIC CONVERSION MODULE | 05-16-2019 |
2526203Q0 | Organic | 9 |
20080272328 | RADIATION-OR THERMALLY-CURABLE OXETANE BARRIER SEALANTS - This invention relates to cationically curable sealants that provide low moisture permeability and good adhesive strength after cure. The composition consists essentially of an oxetane compound and a cationic initiator. | 11-06-2008 |
20090224198 | ELECTRODE MATERIAL FOR ELECTROCHEMICAL ELEMENT AND COMPOSITE PARTICLE - The present invention provides an electrochemical element electrode material that makes it possible to obtain an electrochemical element having both low internal resistance and high capacity, in particular to obtain an electrochemical element electrode having a uniform active material layer in roll molding at a high rate, and an electrode formed of the electrode material. The electrochemical element electrode material comprises composite particle (a) comprising electrode active material, electric conductive material, and fluororesin (a) having a structure unit obtained by polymerizing tetrafluoroethylene and having a melting point of 200° C. or higher, and amorphous polymer (b) not having a structure unit obtained by polymerizing tetrafluoroethylene and having a glass transition temperature of 180° C. or lower. | 09-10-2009 |
20090242823 | PROCESS FOR PREPARING POLYIMIDE BASED COMPOSITIONS USEFUL IN HIGH FREQUENCY CIRCUITRY APPLICATIONS - The invention is directed to polyimide based materials having improved electrical and mechanical performance, and also to a process of making such materials. The compositions of the invention comprise: i. a polyimide base polymer in an amount of at least 60 weight percent; ii. a discontinuous phase of inorganic material present in an amount of at least 4 weight percent; iii. a non-ionic halogenated dispersing agent in an amount of at least 0.1 weight percent; and iv. up to 30 weight percent of other optional ingredients, such as, fillers, processing aids, colorants, or the like. The compositions of the invention generally exhibit excellent high frequency performance and can be manufactured by incorporating the dispersing agent and inorganic material into a polyamic acid solution and then converting the polyamic acid solution into a polyimide by conventional or non-conventional means. | 10-01-2009 |
20090256106 | PATTERNED PHOTOVOLTAIC CELL - Patterned photovoltaic cells, as well as related components and methods, are disclosed. | 10-15-2009 |
20100140534 | EMI/RFI Shielding Resin Composite Material and Molded Product Made Using the Same - Disclosed is an electromagnetic wave EMI/RFI shielding resin composite material that includes a thermoplastic polymer resin, an electrically conductive filler having a polyhedral shape or being capable of forming a polyhedral shape, and a low-melting point metal, and a molded product made using the EMI/RFI shielding resin composite material. | 06-10-2010 |
20110226981 | MULTILAYERED CAP BARRIER IN MICROELECTRONIC INTERCONNECT STRUCTURES - Structures having low-k multilayered dielectric diffusion barrier layer having at least one low-k sublayer and at least one air barrier sublayer are described herein. The multilayered dielectric diffusion barrier layer are diffusion barriers to metal and barriers to air permeation. Methods and compositions relating to the generation of the structures are also described. The advantages of utilizing these low-k multilayered dielectric diffusion barrier layer is a gain in chip performance through a reduction in capacitance between conducting metal features and an increase in reliability as the multilayered dielectric diffusion barrier layer are impermeable to air and prevent metal diffusion. | 09-22-2011 |
20130334454 | FORMULATIONS OF PRINTABLE ALUMINIUM OXIDE INKS - The present invention relates to the use of printable inks for the formation of Al | 12-19-2013 |
20140319404 | TWO-COMPONENT ELECTRON-SELECTIVE BUFFER LAYER AND PHOTOVOLTAIC CELLS USING THE SAME - The present invention relates to the use of certain substituted fullerenes in optoelectronic devices, preferably in photovoltaic cells, preferably in organic photovoltaic cells especially preferred in a two-component electron-selective buffer layer of an organic photovoltaic cell to improve the efficiency of solar cells for energy generation. | 10-30-2014 |
20150325344 | NONLINEAR RESISTIVE COATING MATERIAL, BUS, AND STATOR COIL - A nonlinear resistive coating material | 11-12-2015 |
2526203E0 | Free element containing | 3 |
20090114874 | Copper Precursors for Thin Film Deposition - Non-fluorinated copper precursors and methods for making and using same are described herein. In certain embodiments, the copper precursors described herein may be used as precursors to deposit copper films and alloys thereof on a substrate through, for example, atomic layer deposition or chemical vapor deposition conditions. | 05-07-2009 |
20090166577 | Electrode of Supercapacitor and Method for Manufacturing the Same - A method for manufacturing an electrode of a supercapacitor is provided. First, a poly(acrylonitrile) (PAN) fabric is provided. The PAN fabric includes a plurality of PAN fibers each having a diameter of about 50-500 nm. Then, the PAN fabric undergoes a heat treatment so that the PAN fibers are carbonized to form a carbon fiber textile. The carbon fiber fabric includes a plurality of carbon fibers each having a diameter of about 50-500 nm. The surface of each carbon fiber is nano-porous having a plurality of nano pores of about 1-50 nm in diameter. The total surface area of the nano pores account for about 85-95% of the total surface area of the carbon fibers. The carbon fiber fabric is then cut to acquire the electrode of the supercapacitor. | 07-02-2009 |
20150028248 | DIELECTRIC MATERIAL FOR USE IN ELECTRICAL ENERGY STORAGE DEVICES - A dielectric material for use in electrical energy storage devices includes at least two nanostructures which are each embedded in an electrically insulating matrix made of a material having a bandgap greater than a material of the nanostructures. A probability different from zero of charge carrier tunnelling in parallel to a direction of an electrical field that can be used from outside is set between the two nanostructures. | 01-29-2015 |
2526203V0 | Group VI element-containing | 1 |
20080290314 | COMPOSITION FOR MANUFACTURING BARRIER RIB, AND PLASMA DISPLAY PANEL MANUFACTURED BY THE SAME - The composition for a barrier rib of the present invention includes a metal oxide sol and a glass frit. The metal oxide sol includes a photoacid generator, and the difference between the average refractive index (N | 11-27-2008 |