| Entries |
| Document | Title | Date |
|---|
| 20080217554 | CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD - A charged particle beam writing apparatus includes an irradiation part configured to irradiate a charged particle beam; a first shaping aperture member having passing areas, that the charged particle beam passes through, on both sides of an area blocking the charged particle beam; a deflection part configured to deflect the charged particle beam that has passed through the first shaping aperture member; a second shaping aperture member having passing areas, that the charged particle beam passes through, on both sides of an area blocking the deflected charged particle beam; and a stage on which a target workpiece irradiated with the charged particle beam that has passed through the second shaping aperture member is placed. | 09-11-2008 |
| 20080265174 | CHARGED PARTICLE BEAM WRITING APPARATUS AND METHOD - A charged particle beam writing apparatus includes an unit configured to irradiate a beam, a deflector configured to deflect the beam, a stage, on which a target is placed, configured to perform moving continuously, an lens configured to focus the beam onto the target, an unit configured to calculate a correction amount for correcting positional displacement of the beam on a surface of the target resulting from a first magnetic field caused by the lens and a second magnetic field caused by an eddy current generated by the first magnetic field and the moving of the stage, an unit configured to calculate a correction position where the positional displacement on the surface of the target has been corrected using the correction amount, and an unit configured to control the deflector so that the beam may be deflected onto the correction position. | 10-30-2008 |
| 20080296509 | Phase-shifting element and particle beam device having a phase-shifting element - A phase-shifting element for shifting a phase of at least a portion of a particle beam is described, as well as a particle beam device having a phase-shifting element of this type. In the phase-shifting element and the particle beam device having a phase-shifting element, components shadowing the particle beam are avoided, so that proper information content is achieved and in which the phase contrast is essentially spatial frequency-independent. The phase-shifting element may have at least one means for generating a non-homogeneous or anisotropic potential. The particle beam device according to the system described herein may be provided with the phase-shifting element. | 12-04-2008 |
| 20080315113 | BEAM GUIDANCE MAGNET - A beam guidance magnet for deflecting a beam of electrically charged particles along a curved particle path is provided. The beam guidance magnet includes a coil system that does not include a ferromagnetic material affecting the beam guidance and has curved coils stretched out along the particle path, the coils being arranged in pairs in mirror symmetry to the beam guidance plane. The coil system includes two primary coils and two substantially flat secondary coils. The two primary coils include primary coil sides and primary coil end parts bent upward relative to the beam guidance plane. The two substantially flat secondary coils are disposed between the primary coil end parts. Supplementary coils are disposed in the field range of the respective curved secondary coil end parts. | 12-25-2008 |
| 20090032724 | FOCUSED NEGATIVE ION BEAM FIELD SOURCE - An apparatus for producing negative ions including an emitter coated with an ionic liquid room-temperature molten salt, an electrode positioned downstream relative to the emitter, a power supply that applies a voltage to the emitter with respect to the electrode. The power supply is sufficient to generate a stable high brightness beam of negative ions having minimal chromatic and spherical aberrations in the beam. An electrostatic lens and deflector is used to focus and direct the beam to a target. | 02-05-2009 |
| 20090101832 | DEFLECTING A BEAM OF ELECTRICALLY CHARGED PARTICLES ONTO A CURVED PARTICLE PATH - A device for deflecting a beam of electrically charged particles onto a curved particle path is provided. The device includes at least one beam guidance magnet having a coil system which has at least one coil that is curved along the particle path for the purpose of deflecting the beam onto a curved particle path, and at least one scanner magnet for variably deflecting the beam in a y,z plane at right angles to the particle path, characterized in that the device has at least one correction system which is embodied to influence the particle path in a regulated or controlled manner with the aid of electric and/or magnetic fields as a function of the position of the beam in the y,z plane. The invention also relates to a corresponding method for deflecting a beam of electrically charged particles onto a curved particle path. | 04-23-2009 |
| 20090101833 | GANTRY, PARTICLE THERAPY SYSTEM, AND METHOD FOR OPERATING A GANTRY - The present embodiments relate to a gantry for the beam guidance of a particle beam with at least one beam guidance element. A carrier device is rotatably mounted in such a way that the particle beam can be directed by a rotation of the carrier device with the beam guidance element from various angles on to an object to be irradiated. At least one moveable actuating element may adjust a spatial position of the beam guidance element. | 04-23-2009 |
| 20090134340 | CHARGED PARTICLE BEAM APPARATUS, AND IMAGE GENERATION METHOD WITH CHARGED PARTICLE BEAM APPARATUS - The present invention has a subject to provide an apparatus that optimizes scanning in accordance with circumstances or purposes, reduces distortion of images, and improves throughput, image quality, and defect detection rate by controlling deflection of a charged particle beam in a stage tracking system. To solve this subject, an apparatus according to the present invention is an inspection apparatus for detecting abnormal conditions of an inspection target by irradiating the inspection target with the charged particle beam and detecting generated secondary electrons, including both a stage that moves continuously with the inspection target placed thereon and a deflection control circuit for providing a deflector with a scanning signal that causes the charged particle beam to scan repeatedly in a direction substantially perpendicular to a stage movement axis direction while the charged particle beam being deflected in the stage movement axis direction in accordance with a change in movement speed of the stage during movement of the stage. | 05-28-2009 |
| 20100001204 | Open-ended electromagnetic corrector assembly and method for deflecting, focusing, and controlling the uniformity of a traveling ion beam - The present invention is an electromagnetic controller assembly for use in ion implantation apparatus, and provides a structural construct and methodology which can be employed for three recognizably separate and distinct functions: (i) To adjust the trajectory of charged particles carried within any type of traveling ion beam which is targeted at a plane of implantation or a work surface for the placement of charged ions into a prepared workpiece (such as a silicon wafer or flat glass panel); (ii) concurrently, to alter and change the degree of parallelism of the ions in the traveling beam; and (iii) concurrently, to control the uniformity of the current density along the transverse direction of traveling ion beams, regardless of whether the beams are high-aspect, continuous ribbon ion beams or alternatively are scanned ribbon ion beams. | 01-07-2010 |
| 20100044578 | Charged Particle Beam Lithography System and Target Positioning Device - The invention relates to a charged particle beam lithography system comprising:
| 02-25-2010 |
| 20100090123 | SCANNING IRRADIATION DEVICE OF CHARGED PARTICLE BEAM - An inexpensive scanning irradiation device of a particle beam is obtained without using a rotating gantry. A first scanning electromagnet and a second scanning electromagnet, whose deflection surfaces of the particle beam are the same, and which bend the particle beam having an incident beam axis angle of approximately 45 degrees relative to a horizontal direction in reverse directions to each other; an electromagnet rotation driving mechanism which integrates the first and the second scanning electromagnets and rotates these scanning electromagnets around the incident beam axis; and a treatment bed are provided. The particle beam deflected by the first and the second scanning electromagnets can be obtained at a range of −45 degrees to +45 degrees in deflection angle from an incident beam axis direction. | 04-15-2010 |
| 20100127185 | METHOD FOR MASKLESS PARTICLE-BEAM EXPOSURE - In a maskless particle multibeam processing apparatus, a particle beam is projected through a pattern definition system producing a regular array of beamlets according to a desired pattern, which is projected onto a target which moves at continuous speed along a scanning direction with respect to the pattern definition system. During a sequence of uniformly timed exposure steps the beam image is moved along with the target along the scanning direction, and between exposure steps the location of the beam image is changed with respect to the target. During each exposure step the target covers a distance greater than the mutual distance of neighboring image elements on the target. The location of the beam image at consecutive exposure steps corresponds to a sequence of interlacing placement grids, and after each exposure step the beam image is shifted to a position associated with a different placement grid, with a change of location generally including a component across the scanning direction, thus cycling through the set of placement grids. | 05-27-2010 |
| 20100140494 | COLLIMATOR MAGNET FOR ION IMPLANTATION SYSTEM - A collimator magnet (CM) usable in an ion implantation system provides an exit ion beam with a large aperture, substantially parallel in one plane or orthogonal planes. The CM includes identical poles, defined by an incident edge receiving an ion beam, and an exit edge outputting the ion beam for implantation. Ion beam deflection takes place due to magnetic forces inside the CM and magnetic field fringe effects outside the CM. The CM incident and/or exit edge is shaped by solving a differential equation to compensate for magnetic field fringe effects and optionally, space charge effects and ion beam initial non-parallelism. The CM shape is obtained by imposing that the incidence or exit angle is substantially constant, or, incidence and exit angles have opposite sign but equal absolute values for each ray in the beam; or the sum of incidence and exit angles is a constant or a non-constant function. | 06-10-2010 |
| 20100181494 | REDUCING THE WIDENING OF A RADIATION BEAM - The present embodiments relate to lowering the widening of a radiation beam, for example, using a chamber arranged between a beam output and an object to be irradiated. The chamber is filled with a gas or a gas mixture, the average atomic number of which is smaller than that of air, and the volume expansion of which is changeable. The advantage here is that a widening of a radiation beam caused by multiple scattering is reduced. | 07-22-2010 |
| 20100187435 | PARTICLE BEAM IRRADIATION APPARATUS AND PARTICLE BEAM IRRADIATION METHOD - A particle beam irradiation apparatus includes: a beam generation unit that generates a particle beam; a beam emission control unit that controls emission of the particle beam; a beam scanning instruction unit that sequentially two-dimensionally instructs a position of the particle beam so that the particle beam is scanned across the entire slice; a beam scanning unit that two-dimensionally scans the particle beam; a respiration gate generation unit that generates a respiration gate synchronized with a respiration cycle of the patient; and a pulse generation unit that generates a predetermined number of scanning start pulses at substantially equally spaced time intervals in the respiration gate. The beam scanning instruction unit instructs to scan the entire slice by pattern irradiation based on a set dose from each of the scanning start pulses so that a scan of the same slice is repeated the predetermined number of times. | 07-29-2010 |
| 20100320393 | OFF-AXIS ION MILLING DEVICE FOR MANUFACTURE OF MAGNETIC RECORDING MEDIA AND METHOD FOR USING THE SAME - A tool for patterning a disk such as a magnetic media disk for use in a disk drive system. The tool includes a chamber and a first and second series of magnets, each evenly spaced about the chamber wall. An ion beam source at an end of the chamber emits an ion beam toward the disk which is held within the chamber. The first series of magnets deflect the ion beam away from center and toward the chamber wall. The second ion beam source deflects the ion beam back toward the center so that the ion beam can strike the disk at an angle. In addition, to bending the ion beam, the magnets also rotate the bent ion beam so the movement of the ion beam revolves within the chamber. | 12-23-2010 |
| 20100320394 | METHODS AND SYSTEMS FOR INCREASING THE ENERGY OF POSITIVE IONS ACCELERATED BY HIGH-POWER LASERS - The energy of positive ions accelerated in laser-matter interaction experiments can be significantly increased by providing a plurality of laser pulses, e.g., through the process of splitting the incoming laser pulse, to form multiple laser-matter interaction stages. From a thermodynamic point of view, the splitting procedure can be viewed as an effective way of increasing the efficiency of energy transfer from the laser light to positive ions, which energy peaks for processes having the least amount of entropy gain. A 100% increase in the energy efficiency is achieved for a six-stage laser positive ion accelerator compared to a single-stage laser positive ion accelerator. | 12-23-2010 |
| 20110031408 | MASK HEALTH MONITOR USING A FARADAY PROBE - In an ion implanter, an ion current measurement device is disposed behind a mask co-planarly with respect to a surface of a target substrate as if said target substrate was positioned on a platen. The ion current measurement device is translated across the ion beam. The current of the ion beam directed through a plurality of apertures of the mask is measured using the ion current measurement device. In this manner, the position of the mask with respect to the ion beam as well as the condition of the mask may be determined based on the ion current profile measured by the ion current measurement device. | 02-10-2011 |
| 20110084216 | METHOD FOR TREATING NON-PLANAR STRUCTURES USING GAS CLUSTER ION BEAM PROCESSING - A method for treating a structure is described. One embodiment includes forming a structure on a substrate, wherein the structure has a plurality of surfaces including one or more first surfaces lying substantially parallel to a first plane parallel with said substrate and one or more second surfaces lying substantially perpendicular to the first plane. Additionally, the method comprises directing a gas cluster ion beam (GCIB) formed from a material source toward the substrate with a direction of incidence, and orienting the substrate relative to the direction of incidence. The method further comprises treating the one or more second surfaces. | 04-14-2011 |
| 20110089334 | ION IMPLANTER WITH VARIABLE APERTURE AND ION IMPLANT METHOD THEREOF - An ion implanter and an ion implant method are disclosed. The ion implanter has an aperture assembly with a variable aperture and is located between an ion source of an ion beam and a holder for holding a wafer. At least one of the size and the shape of the variable aperture is adjustable. The ion beam may be flexibly shaped by the variable aperture, so that the practical implantation on the wafer can be controllably adjusted without modifying an operation of both the ion source and mass analyzer or applying a magnetic field to modify the ion beam. An example of the aperture assembly has two plates, each having an opening formed on its edge such that a variable aperture is formed by a combination of these openings. By respectively moving the plates, the size and the shape of the variable aperture can be changed. | 04-21-2011 |
| 20110108737 | PARTICLE BEAM IRRADIATION APPARATUS - In order to obtain a particle beam irradiation apparatus that enlarges the dose distribution of beam spots while suppressing a decrease of the maximum available range of a charged particle beam, the particle beam irradiation apparatus includes a particle beam acceleration means; particle beam transport means; scanning apparatus that includes first scanning means and second scanning means, and two-dimensionally scans the beam; and irradiation control means that controls the scanning apparatus so as to irradiate the beam onto a target region including a plurality of small regions. The irradiation control means controls the first scanning means so as to scan the beam over a small region serving as an irradiation subject among the plurality of the small regions, and controls the second scanning means so as to change the small region serving as the irradiation subject to be a different small region among the plurality of the small regions. | 05-12-2011 |
| 20110186747 | Systems And Methods For Scanning A Beam Of Charged Particles - Systems and methods of an ion implant apparatus include an ion source for producing an ion beam along an incident beam axis. The ion implant apparatus includes a beam deflecting assembly coupled to a rotation mechanism that rotates the beam deflecting assembly about the incident beam axis and deflects the ion beam. At least one wafer holder holds target wafers and the rotation mechanism operates to direct the ion beam at one of the at least one wafer holders which also rotates to maintain a constant implant angle. | 08-04-2011 |
| 20110309264 | DEVICE FOR GENERATING AN ION BEAM WITH MAGNETIC FILTER - The invention relates to a device ( | 12-22-2011 |
| 20120091361 | SPIN ISOLATION APPARATUS, SPIN ASYMMETRIC MATERIAL PRODUCING METHOD, CURRENT SOURCE, AND SIGNAL PROCESSING METHOD - A spin isolation apparatus comprising a particle source for emitting particles having spins, a receiving section for receiving the particles emitted by the particle source, a magnet for separating the particles into first particles having positive spins and second particles having negative spins, and a trajectory restricting section for isolating the first and the second particles received by the receiving section through restricting trajectories of the first particles and/or the second particles is provided. By applying this apparatus, particles having spins whose every sign is either one of the two signs can be mass-produced. | 04-19-2012 |
| 20120145917 | APPARATUS OF PLURAL CHARGED PARTICLE BEAMS WITH MULTI-AXIS MAGNETIC LENS - An apparatus basically uses a simple and compact multi-axis magnetic lens to focus each of a plurality of charged particle beams on sample surface at the same time. In each sub-lens module of the multi-axis magnetic lens, two magnetic rings are respectively inserted into upper and lower holes with non-magnetic radial gap. Each gap size is small enough to keep a sufficient magnetic coupling and large enough to get a sufficient axial symmetry of magnetic scale potential distribution in the space near to its optical axis. This method eliminates the non-axisymmetric transverse field in each sub-lens and the round lens field difference among all sub-lenses at the same time; both exist inherently in a conventional multi-axis magnetic lens. In the apparatus, some additional magnetic shielding measures such as magnetic shielding tubes, plates and house are used to eliminate the non-axisymmetric transverse field on the charged particle path from each charged particle source to the entrance of each sub-lens and from the exit of each sub-lens to the sample surface. | 06-14-2012 |
| 20120235055 | Focused Ion Beam Device and Focused Ion Beam Processing Method - Disclosed is an operation for an optical system which achieves observation of focused ion beam processing equivalent to that in a case wherein a sample stage is tilted mechanically. In a focused ion beam optical system, an aperture, a tilting deflector, a beam scanner, and an objective lens are controlled so as to irradiate an ion beam tilted to the optical axis of the optical system, thereby achieving thin film processing and a cross section processing without accompanying adjustment and operation for a sample stage. The thin film processing and the cross section processing with a focused ion beam can be automated, and yield can be improved. For example, by applying the present invention to a cross section monitor to detect an end point, the cross section processing can be easily automated. | 09-20-2012 |
| 20120248328 | APPARATUS AND METHOD FOR MULTIPLE SLOT ION IMPLANTATION - An ion implantation system may comprise a plasma source for providing a plasma and a workpiece holder arranged to receive a bias with respect to the plasma to attract ions across a plasma sheath toward the substrate. The system may also include an extraction plate arrangement comprising a multiplicity of different apertures each arranged to provide an ion beam having ions distributed over a range of angles of incidence on the workpiece, wherein a first ion beam extracted from a first aperture has a first beam profile that differs from a second ion beam extracted from a second aperture. | 10-04-2012 |
| 20120267545 | PROCESSING SYSTEM - A processing system includes a piping which extends annularly, such as in the form of a circular annular shape, around a beam path between a focusing lens and an interaction region. The piping includes, on a side which faces the interaction region, a plurality of exit openings for the gas towards the interaction region. The piping also includes a holder configured to pivot the piping about a pivot axis. The holder is parallel to the tilt axis of the object holder. | 10-25-2012 |
| 20120292524 | CHARGED PARTICLE LITHOGRAPHY SYSTEM WITH APERTURE ARRAY COOLING - A charged particle lithography system for pattern transfer onto a target surface, comprising a beam generator for generating a plurality of beamlets, and a plurality of aperture array elements comprising a first aperture array, a blanker array, a beam stop array, and a projection lens array. Each aperture array element comprises a plurality of apertures arranged in a plurality of groups, wherein the aperture groups of each aperture array element form beam areas distinct and separate from non-beam areas formed between the beam areas and containing no apertures for beamlet passage. The beam areas are aligned to form beam shafts, each comprising a plurality of beamlets, and the non-beam areas are aligned to form non-beam shafts not having beamlets present therein. The first aperture array element is provided with cooling channels in the non-beam areas for transmission of a cooling medium for cooling the array element. | 11-22-2012 |
| 20120319002 | ION GENERATING APPARATUS - Disclosed is an ion generating apparatus including a housing that is configured to be capable of specifically setting the positional relationship between the ion generating apparatus and an object from which adhering odors are to be removed. The ion generating apparatus is capable of directionally emitting ions toward the object. | 12-20-2012 |
| 20130001433 | Real Time Monitoring Ion Beam - The invention provides a method to real time monitor the ion beam. Initially, turn on an ion implanter which has a wafer holder, a Faraday cup and a measurement device positioned close to a special portion of a pre-determined ion beam path of the ion beam, wherein the Faraday cup is positioned downstream the wafer holder and the measurement device is positioned upstream the wafer holder. Then, measure a first ion beam current received by the Faraday cup and a second ion beam current received by the measurement device. By continuously measuring the first and second ion beam current, the ion beam is real-time monitored even the Faraday cup is at least partially blocked during the period of moving the wafer holder across the ion beam. Accordingly, the on-going implantation process and the operation of the implanter can be adjusted. | 01-03-2013 |
| 20130037725 | GRID PROVIDING BEAMLET STEERING - A grid assembly coupled to a discharge chamber of an ion beam source is configured for steering ion beamlets emitted from the discharge chamber at circularly asymmetrically determined steering angles. The grid assembly includes at least first and a second grid with a substantially circular pattern of holes, wherein each grid comprises holes positioned adjacent to one another. A plurality of the holes of the second grid is positioned with offsets relative to corresponding holes in the first grid. Due to the offsets in the holes in the second grid, ions passing through the offset holes are electrostatically attracted towards the closest circumferential portion of the downstream offset holes. Thus, the trajectories of ions passing through the offset holes are altered. The beamlet is steered by predetermined asymmetric angles. The predetermined steering angles are dependent upon the hole offsets, voltage applied to the grids, and the distance between the grids. | 02-14-2013 |
| 20130134324 | COMPACT HIGH-VOLTAGE ELECTRON GUN - One embodiment relates to a high-voltage electron gun including an insulator stand-off having a resistive layer. The resistive layer is at least on an interior surface of the insulator stand-off. A cathode holder is coupled to one end of the insulator 115 stand-off, and an anode is coupled to the other end. The resistive layer advantageously increases the surface breakdown field strength for the insulator stand-off and so enables a compact design for the high-voltage electron gun. Other embodiments, aspects and feature are also disclosed. | 05-30-2013 |
| 20130146780 | SYSTEMS AND METHODS PROVIDING ELECTRON BEAM WRITING TO A MEDIUM - A method for electron-beam writing to a medium includes positioning the medium within an e-beam writing machine so that the medium is supported by a stage and is exposed to an e-beam source. The method also includes writing a pattern to the medium using a plurality of independently-controllable beams of the e-beam source, in which the pattern comprises a plurality of parallel strips. Each of the parallel strips is written using multiple ones of the independently-controllable beams. | 06-13-2013 |
| 20130153782 | Multi-axis Magnetic Lens for Focusing a Plurality of Charged Particle Beams - The present invention provides two ways to form a special permeability-discontinuity unit inside every sub-lens of a multi-axis magnetic lens, which either has a simpler configuration or has more flexibility in manufacturing such as material selection and mechanical structure. Accordingly several types of multi-axis magnetic lens are proposed for various applications. One type is for general application such as a multi-axis magnetic condenser lens or a multi-axis magnetic transfer lens, another type is a multi-axis magnetic non-immersion objective which can require a lower magnetomotive force, and one more type is a multi-axis magnetic immersion objective lens which can generate smaller aberrations. Due to using permeability-discontinuity units, every multi-axis magnetic lens in this invention can also be electrically excited to function as a multi-axis electromagnetic compound lens so as to further reduce aberrations thereof and/or realize electron beam retarding for low-voltage irradiation on specimen. | 06-20-2013 |
| 20130234034 | APPARATUS AND METHOD FOR CONTROLLABLY IMPLANTING WORKPIECES - A plasma processing apparatus comprises a plasma source configured to produce a plasma in a plasma chamber, such that the plasma contains ions for implantation into a workpiece. The apparatus also includes a focusing plate arrangement having an aperture arrangement configured to modify a shape of a plasma sheath of the plasma proximate the focusing plate such that ions exiting an aperture of the aperture arrangement define focused ions. The apparatus further includes a processing chamber containing a workpiece spaced from the focusing plate such that a stationary implant region of the focused ions at the workpiece is substantially narrower that the aperture. The apparatus is configured to create a plurality of patterned areas in the workpiece by scanning the workpiece during ion implantation. | 09-12-2013 |
| 20130256556 | CHROMATIC ENERGY FILTER - An energy filter device for radiation includes at least one focusing device configured as an energy-dependent focusing device and at least one beam separating device. | 10-03-2013 |
| 20130270453 | SYSTEM FOR RADIATION STERILIZATION OF MEDICAL DEVICES - Methods and systems for selection radiation exposure in sterilization of medical devices are disclosed. | 10-17-2013 |
| 20130306878 | ELECTRODE OF ELECTROSTATIC LENS AND METHOD OF MANUFACTURING THE SAME - An electrode to be used for an electrostatic lens, wherein the electrode at least includes: a first substrate having a first through-hole and a second substrate having a second through-hole; the first substrate having a thickness smaller than the second substrate; the first through-hole having a diameter smaller than the second through-hole; the second substrate having a specific resistance smaller than the first substrate, wherein the first substrate and the second substrate are superimposed so that the first through-hole and the second through-hole are aligned relative to each other. Notching taking place near any of the through-holes in a dry etching process can be reduced, and thus, the through-holes can be formed accurately. | 11-21-2013 |
| 20130320229 | IMAGING AND PROCESSING FOR PLASMA ION SOURCE - Applicants have found that energetic neutral particles created by a charged exchange interaction between high energy ions and neutral gas molecules reach the sample in a ion beam system using a plasma source. The energetic neutral create secondary electrons away from the beam impact point. Methods to solve the problem include differentially pumped chambers below the plasma source to reduce the opportunity for the ions to interact with gas. | 12-05-2013 |
| 20130320230 | MULTI CHARGED PARTICLE BEAM WRITING METHOD AND MULTI CHARGED PARTICLE BEAM WRITING APPARATUS - A multi charged particle beam writing method includes calculating first shot positions of multiple beams, each of which includes a distortion amount of an irradiating corresponding beam, in a case of irradiating each beam, based on control grid intervals, calculating first condition positions based on a pre-set condition, each of which is arranged in a corresponding first region surrounded by closest second shot positions of 2×2 in length and width of the first shot positions, calculating, for each of second regions respectively surrounded by closest second condition positions of the first condition positions, an area density of a figure pattern in overlapping with a second region concerned, calculating an irradiation amount or an irradiation time of each beam whose corresponding first shot position is in a corresponding second region, based on an area density, and writing a pattern by irradiating a beam of the calculated irradiation amount or time. | 12-05-2013 |
| 20140034845 | Charged Particle Optics with Azimuthally-Varying Third-Order Aberrations for Generation of Shaped Beams - A charged particle shaped beam column includes: an objective lens configured to form a charged particle shaped beam on the surface of a substrate, wherein the disk of least confusion of the objective lens does not coincide with the surface of the substrate; an optical element with 8N poles disposed radially symmetrically about the optic axis of the column, the optical element being positioned between a condenser lens and the objective lens, wherein integer N1; and a power supply applying excitations to the optical element's 8N poles to provide an octupole electromagnetic field. The octupole electromagnetic field induces azimuthally-varying third-order deflections to beam trajectories passing through the 8N-pole optical element. By controlling the excitation of the 8N poles a shaped beam, such as a square beam, can be formed at the surface of the substrate. | 02-06-2014 |
| 20140042334 | METHOD OF AND SYSTEM FOR EXPOSING A TARGET - The invention relates to a method of exposing a target by means of a plurality of beamlets. First, a plurality of beamlets is provided. The beamlets are arranged in an array. Furthermore, a target to be exposed is provided. Subsequently, relative movement in a first direction between the plurality of beamlets and the target is created. Finally, the plurality of beamlets is moved in a second direction, such that each beamlet exposes a plurality of scan lines on the target. The relative movement in the first direction and the movement of the plurality of beamlets in the second direction are such that the distance between adjacent scan lines exposed by the plurality of beamlets is smaller than a projection pitch P | 02-13-2014 |
| 20140117249 | Devices and Methods of Capturing Back Scattered Particles - Provided is an apparatus comprising a source which emits at least one of particles or radiation. The particles or radiation are emitted towards a target. Arranged between the source and the target is a microchannel plate. Also arranged between the source and the target is a collimator. | 05-01-2014 |
| 20140175302 | MULTI CHARGED PARTICLE BEAM WRITING APPARATUS - A multi charged particle beam writing apparatus includes a stage to mount a target object thereon and to be movable, an emission unit to emit a charged particle beam, an aperture member, in which a plurality of openings are formed, to produce multiple beams by letting a region including the whole of a plurality of openings be irradiated with the charged particle beam and letting portions of the charged particle beam respectively pass through a corresponding opening of a plurality of openings, a reduction optical system to reduce the multiple beams, and a doublet lens, arranged at the subsequent stage of the reduction optical system, in which a magnification is 1 and directions of magnetic fluxes are opposite. | 06-26-2014 |
| 20140175303 | CHARGED PARTICLE BEAM WRITING APPARATUS - A multi charged particle beam writing apparatus includes a stage to mount a target object thereon, an emission unit to emit a charged particle beam, an aperture member, in which a plurality of openings are formed, to form a multibeam by letting a region including a whole of the plurality of openings be irradiated with the charged particle beam and letting portions of the charged particle beam respectively pass through a corresponding opening of the plurality of openings, a plurality of electromagnetic lenses, directions of whose magnetic fields are opposite, and three or more electrostatic lenses, at least one of which is arranged in each of the magnetic fields of a plurality of electromagnetic lenses and one or more of which also serve as deflectors for collectively deflecting the multibeam onto the target object. | 06-26-2014 |
| 20140197331 | CHARGED PARTICLE DEVICE - A charged particle device includes a cylindrical column ( | 07-17-2014 |
| 20140217305 | SYSTEMS AND METHODS PROVIDING ELECTRON BEAM WRITING TO A MEDIUM - A method for electron-beam writing to a medium includes positioning the medium within an e-beam writing machine so that the medium is supported by a stage and is exposed to an e-beam source. The method also includes writing a pattern to the medium using a plurality of independently-controllable beams of the e-beam source, in which the pattern comprises a plurality of parallel strips. Each of the parallel strips is written using multiple ones of the independently-controllable beams. | 08-07-2014 |
| 20140264066 | DEFLECTION SCAN SPEED ADJUSTMENT DURING CHARGED PARTICLE EXPOSURE - A method for exposing a wafer in a charged particle lithography system. The method comprises generating a plurality of charged particle beamlets, the beamlets arranged in groups, each group comprising an array of beamlets; moving the wafer under the beamlets in a first direction at a wafer scan speed; deflecting the beamlets in a second direction substantially perpendicular to the first direction at a deflection scan speed, and adjusting the deflection scan speed to adjust a dose imparted by the beamlets on the wafer. | 09-18-2014 |
| 20140346369 | MULTI CHARGED PARTICLE BEAM WRITING APPARATUS, AND MULTI CHARGED PARTICLE BEAM WRITING METHOD - A multi charged particle beam writing apparatus includes a dose calculation unit to calculate a first dose resolving the resist of the target object, for a first beam of the multiple beams, corresponding to a pattern forming region, in which a pattern is arranged, and to calculate a second dose not resolving the resist, for a second beam of the multiple beams, corresponding to a no-pattern forming region, which surrounds the whole perimeter of the pattern and in which no pattern is arranged, and a deflection control unit to control a plural blankers so that a dose of the first beam is to be the first dose calculated and a dose of the second beam is to be the second dose calculated. | 11-27-2014 |
| 20140361193 | MULTI CHARGED PARTICLE BEAM WRITING METHOD, AND MULTI CHARGED PARTICLE BEAM WRITING APPARATUS - A multi charged particle beam writing method includes dividing a maximum irradiation time per a shot into a digit number of first irradiation time periods, each of which is calculated by multiplying a corresponding second gray scale value by the quantization unit, where second gray scale values are gray scale values defined in decimal numbers converted from each digit value of data of binary numbers; dividing second irradiation time periods, which are a part of the first irradiation time periods into third irradiation time periods; dividing irradiation of each beam into the first irradiation steps of the third irradiation time periods and second irradiation steps of the remaining undivided first irradiation time periods; and irradiating a target object, in order, with the multi beams such that the groups are respectively composed of combination of at least two irradiation steps of first irradiation steps and second irradiation steps and the groups continue in order. | 12-11-2014 |
| 20150034836 | ELECTRON BEAM EQUIPMENT - To improve the efficiency of generation of chromatic aberrations of an energy filter for reducing energy distribution. Mounted are an energy filter for primary electrons, the energy filter having a beam slit and a pair of a magnetic deflector and an electrostatic deflector that are superimposed with each other. An electron lens is arranged between the beam slit and the pair of the magnetic deflector and the electrostatic deflector. | 02-05-2015 |
| 20150083929 | FOCUSED ION BEAM LOW KV ENHANCEMENT - The invention provides a charged particle beam system wherein the middle section of the focused ion beam column is biased to a high negative voltage allowing the beam to move at higher potential than the final beam energy inside that section of the column. At low kV potential, the aberrations and coulomb interactions are reduced, which results in significant improvements in spot size. | 03-26-2015 |
| 20150115169 | METHODS AND APPARATUS FOR ION SOURCES, ION CONTROL AND ION MEASUREMENT FOR MACROMOLECULES - Disclosed are methods, apparatus, systems, processes and other inventions relating to: ion sources with controlled electro-pneumatic superposition, ion source synchronized to RF multipole, ion source with charge injection, optimized control in active feedback system, radiation supported charge-injection liquid spray, ion source with controlled liquid injection as well as various embodiments and combinations of each of the foregoing. | 04-30-2015 |
| 20150380204 | IMAGING AND PROCESSING FOR PLASMA ION SOURCE - Applicants have found that energetic neutral particles created by a charged exchange interaction between high energy ions and neutral gas molecules reach the sample in a ion beam system using a plasma source. The energetic neutral create secondary electrons away from the beam impact point. Methods to solve the problem include differentially pumped chambers below the plasma source to reduce the opportunity for the ions to interact with gas. | 12-31-2015 |
| 20150380205 | INTEGRATED LIGHT OPTICS AND GAS DELIVERY IN A CHARGED PARTICLE LENS - A method and apparatus for directing light or gas or both to a specimen positioned within about 2 mm from the lower end of a charged particle beam column The charged particle beam column assembly includes a platform defining a specimen holding position and has a set of electrostatic lenses each including a set of electrodes. The assembly includes a final electrostatic lens that includes a final electrode that is closest to the specimen holding position. This final electrode defines at least one internal passageway having a terminus that is proximal to and directed toward the specimen holding position. | 12-31-2015 |
| 20160020063 | CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD - A charged particle beam writing apparatus includes a stage configured to mount a sample placed thereon; an electron optical column including a charged particle gun and deflector, wherein the charged particle gun is configured to emit a charged particle beam, and the deflector includes a plurality of deflecting electrodes configured to control a path of the charged particle beam; an ozone introducing mechanism configured to introduce ozone into the electron optical column; a first voltage supply unit configured to apply a deflection voltage to the plurality of deflecting electrodes to deflect the charged particle beam; and a second voltage supply unit configured to apply an identical negative DC voltage to the plurality of deflecting electrodes, wherein a negative voltage in which the deflection voltage and the negative DC voltage are added is applied to the plurality of deflecting electrodes while the sample is irradiated by the charged particle beam. | 01-21-2016 |
| 20160049278 | Apparatus for Charged Particle Lithography System - An apparatus for use in a charged particle multi-beam lithography system is disclosed. The apparatus includes a plurality of charged particle doublets each having a first aperture and each configured to demagnify a beamlet incident upon the first aperture thereby producing a demagnified beamlet. The apparatus further includes a plurality of charged particle lenses each associated with one of the charged particle doublets, each having a second aperture, and each configured to receive the demagnified beamlet from the associated charged particle doublet and to realize one of two states: a switched-on state, wherein the demagnified beamlet is allowed to travel along a desired path, and a switched-off state, wherein the demagnified beamlet is prevented from traveling along the desired path. In embodiments, the first aperture is greater than the second aperture, thereby improving particle beam efficiency in the charged particle multi-beam lithography system. | 02-18-2016 |
| 20160104599 | MULTI SPECIES ION SOURCE - A high brightness ion source with a gas chamber includes multiple channels, wherein the multiple channels each have a different gas. An electron beam is passed through one of the channels to provide ions of a certain species for processing a sample. The ion species can be rapidly changed by directing the electrons into another channel with a different gas species and processing a sample with ions of a second species. Deflection plates are used to align the electron beam into the gas chamber, thereby allowing the gas species in the focused ion beam to be switched quickly. | 04-14-2016 |
| 20160111251 | PARTICLE-OPTICAL SYSTEMS AND ARRANGEMENTS AND PARTICLE-OPTICAL COMPONENTS FOR SUCH SYSTEMS AND ARRANGEMENTS - A particle-optical arrangement comprises a charged-particle source for generating a beam of charged particles; a multi-aperture plate arranged in a beam path of the beam of charged particles, wherein the multi-aperture plate has a plurality of apertures formed therein in a predetermined first array pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the multi-aperture plate, and wherein a plurality of beam spots is formed in an image plane of the apparatus by the plurality of beamlets, the plurality of beam spots being arranged in a second array pattern; and a particle-optical element for manipulating the beam of charged particles and/or the plurality of beamlets; wherein the first array pattern has a first pattern regularity in a first direction, and the second array pattern has a second pattern regularity in a second direction electron-optically corresponding to the first direction, and wherein the second regularity is higher than the first regularity. | 04-21-2016 |
| 20160111252 | CHARGED PARTICLE BEAM WRITING APPARATUS, CHARGED PARTICLE BEAM WRITING METHOD, AND SHOT CORRECTION METHOD OF CHARGED PARTICLE BEAM WRITING METHOD - In a charged particle beam writing apparatus, a charged particle optical system includes a first, second, and third deflection control system configured to form a shot of a charged particle beam, control a shape and size of the shot, and control an irradiation position of the shot respectively. A shot data generation processing device generates shot data of writing a latent image on a resist layer in a sample, using (1) design data of a pattern to be formed in a member, wherein the member is formed in a sample, and the resist layer is formed on the member, and (2) correction information of a shot size and an irradiation shot position obtained from in-plane distribution data of an XY dimension variation amount of dimension measurement patterns. The dimension measurement patterns are formed by writing test patterns on a resist layer and transferring the test patterns onto a member. | 04-21-2016 |
| 20160141142 | BLANKING SYSTEM FOR MULTI CHARGED PARTICLE BEAMS, AND MULTI CHARGED PARTICLE BEAM WRITING APPARATUS - A blanking system for multi charged particle beams includes a blanking aperture array device to include a first substrate where a plurality of openings corresponding to passage positions of multi-beams are formed in a penetrating manner from the upper surface, and a plurality of electrode groups each having a pair of electrodes which are close to a corresponding one of the plurality of openings and are at opposite sides, on a same surface, of the corresponding one of the plurality of openings are arranged on the first substrate, a second substrate whose lower surface is electrically connected through a bump to the upper surface of the first substrate, and a mounting substrate whose upper surface is electrically connected through a bump to the lower surface of the second substrate. | 05-19-2016 |
| 20160155610 | MULTIPLE CHARGED PARTICLE BEAM LITHOGRAPHY APPARATUS AND MULTIPLE CHARGED PARTICLE BEAM PATTERN WRITING METHOD | 06-02-2016 |
| 20160181065 | CHARGED PARTICLE BEAM DRAWING APPARATUS AND CHARGED PARTICLE BEAM DRAWING METHOD | 06-23-2016 |
| 20160203941 | Diaphragm Mounting Member and Charged Particle Beam Device | 07-14-2016 |
