Entries |
Document | Title | Date |
20080258049 | Quantum repeater using atomic cascade transitions - Via atomic cascade emission, an entangled pair of photons may be generated. A first one of the entangled pair may be ideal for long-distance communication. The other one may be suited for mapping to a long-lived atomic memory. Also, a deterministic single photon may be produced using a feedback system. If the feedback system indicates that an excitation exists in an atomic ensemble, then the atomic ensemble may be hit with a laser to produce the deterministic single photon. Furthermore, gas in the atomic ensemble may be subdivided into independent elements each of which may function as a memory element itself. In addition, dual species matter qubits may be entangled with light. A volume in an atomic ensemble may comprise a first isotope vapor storing a first state of a qubit. The volume may also comprise a second isotope vapor configured to store a second state of the qubit. | 10-23-2008 |
20090001256 | PHOTOELECTRIC CONVERSION DEVICE AND ELECTRONIC DEVICE PROVIDED WITH THE PHOTOELECTRIC CONVERSION DEVICE - It is an object to provide a photoelectric conversion device which can solve the problem of leakage current or noise caused when the photoelectric conversion device is connected to an external circuit by amplifying the current flows through the photoelectric conversion element, and which can widen dynamic range of the output voltage which is obtained in accordance with the current flowing through the photoelectric conversion element. The photoelectric conversion device includes a voltage detection circuit, and a photoelectric conversion circuit including a photoelectric conversion element, a current mirror circuit, and a field effect transistor. The current mirror circuit is a circuit which amplifies and outputs a photocurrent generated at the photoelectric conversion element. The voltage detection circuit is connected to the gate terminal of the field effect transistor so as to detect generated voltage. | 01-01-2009 |
20090032684 | OPTICAL DEVICE AND PRODUCTION METHOD THEREOF - An optical device includes a base and an optical element chip and translucent member attached to the base. A wiring is buried in the base. One end of the wiring is an internal terminal portion. The other end of the wiring is an external terminal portion. A semiconductor chip incorporating peripheral circuits, etc., and a metal wire for connecting a pad electrode of the semiconductor chip and the wiring are buried in the base. The semiconductor chip incorporating peripheral circuits, etc., and the metal wire are buried together with the wiring in the base by molding, whereby the optical device and the semiconductor chip incorporating peripheral circuits, etc., are integrated into a single package. | 02-05-2009 |
20090032685 | Trench photosensor for a CMOS imager - A trench photosensor for use in a CMOS imager having an improved charge capacity. The trench photosensor may be either a photogate or photodiode structure. The trench shape of the photosensor provides the photosensitive element with an increased surface area compared to a flat photosensor occupying a comparable area on a substrate. The trench photosensor also exhibits a higher charge capacity, improved dynamic range, and a better signal-to-noise ratio. Also disclosed are processes for forming the trench photosensor. | 02-05-2009 |
20090108181 | PHOTODETECTOR - A photodetector includes a plurality of photodetecting elements which output electrical signals corresponding to the intensities of light that entered these; a signal processing element which is opposed to the photodetecting elements and is connected to the photodetecting elements via conductive bumps, and into which electrical signals output from the photodetecting elements are input; a resin which has electrical insulation and is filled in at least at the gaps between the photodetecting elements and the signal processing element; and a light shielding member arranged so as to cover the surfaces exposed from the photodetecting elements and the signal processing element in the resin. | 04-30-2009 |
20090134315 | Photo-detector array - A system accountably maintains an accumulated charge of a photo-detector charge well at or around a predefined level. | 05-28-2009 |
20090166516 | PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, PHOTOELECTRIC CONVERSION DEVICE, AND IMAGE SENSING SYSTEM - A photoelectric conversion device manufacturing method comprises: a first implantation step of implanting impurity ions of a first conductivity type into an underlying substrate via a region of the oxide film exposed by an opening, thereby forming a first semiconductor region having a first thickness in the element region; an the oxidation step of oxidizing the region of the oxide film exposed by the opening, thereby thickening the exposed region; an the exposure step of exposing a region of the oxide film which is not exposed by the opening; a the second implantation step of, after the exposure step, implanting the impurity ions of the first conductivity type into the underlying substrate via a region unthickened in the oxidation step, thereby forming a second semiconductor region having a second thickness larger than the first thickness in the element isolation region; and an the element formation step. | 07-02-2009 |
20090173874 | Optoelectronic Detector with Multiple Readout Nodes and Its Use Thereof - The present invention discloses an optoelectronic detector for light sensing. The optoelectronic detector has a photosensitive element that converts light into electrons. Efficient collection of these electrons at readout nodes, embedded in the photosensitive element, is required to make correct measurements of light characteristics such as, phase shift and intensity. This collection of electrons is achieved by applying a voltage gradient across an electrode within the optoelectronic detector. The optoelectronic detector can have multiple readout nodes. Further, the present invention discloses methods for detecting intensity and phase shift of impinging light and for suppression of background illumination while detecting the characteristics of light. | 07-09-2009 |
20090189060 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE PICKUP SYSTEM USING PHOTOELECTRIC CONVERSION APPARATUS - It is a main object of the present invention to suppress the differences of color ratios of B/G and R/G when the film thicknesses of antireflective films and insulation films vary at a processing process. The present invention is a photoelectric conversion apparatus including a plurality of light receiving portions arranged on a semiconductor substrate, antireflective films formed on the light receiving portions with insulation films put between them, and color filter layers of a plurality of colors formed on the antireflective films, wherein film thicknesses of the insulation films and/or the antireflective films are changed such that changing directions of spectral transmittances at peak wavelengths of color filters on sides of the shortest wavelengths and at peak wavelengths of color filters on sides of the longest wavelengths after transmission of infrared cutting filters may be the same before and after changes. | 07-30-2009 |
20090200454 | PIXEL CIRCUIT FOR GLOBAL ELECTRONIC SHUTTER - An image sensor formed of an array of pixels, each pixel including a photodiode coupled between a first reference voltage and a first switch, the first switch being operable to connect the photodiode to a first node; a capacitor arranged to store a charge accumulated by the photodiode, the capacitor being coupled between a second reference voltage and a second node; a second switch coupled between the first and second nodes, the second switch being operable to connect the capacitor to the first node; and read circuitry coupled for reading the voltage at the second node. | 08-13-2009 |
20090200455 | CMOS APS WITH STACKED AVALANCHE MULTIPLICATION LAYER AND LOW VOLTAGE READOUT ELECTRONICS - An image sensor includes a pixel having a protection circuit connected to a charge multiplying photoconversion layer. The protection circuit prevents the pixel circuit from breaking down when the voltage in the pixel circuit reaches the operating voltage applied to the charge multiplying photoconversion layer in response to the image sensor being exposed to a strong light. The protection circuit causes additional voltage entering the pixel circuit from the charge multiplying photoconversion layer over a predetermined threshold voltage level to be dissipated from the storage node and any downstream components. | 08-13-2009 |
20090236504 | PHOTO-SENSING DEVICE, PHOTOSENSOR, AND DISPLAY DEVICE - A photo-sensing device is disclosed, comprising a photoelectric conversion semiconductor thin film, thin films for ohmic contacts to be provided to form an incident light window on one face of the photoelectric conversion semiconductor thin film, first and second ohmic electrodes installed on the thin films for the ohmic contacts, a connection wiring for short-circuiting the first and the second ohmic electrodes, an insulating film provided on the other face of the photoelectric conversion semiconductor thin film, and a first electrode provided on the face of the insulating film that does not contact the photoelectric conversion semiconductor thin film. | 09-24-2009 |
20100044554 | Timebase Circuit Arrangements - A timebase is provided by a circuit including an optical source emitting a light beam which is detected and integrated by an optical detector/integrator to give an output when the integrated value reaches a preset value. The optical source is a laser or LED. The optical detector/integrator is a photon counter. | 02-25-2010 |
20100108864 | SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD OF THE SAME, AND IMAGING APPARATUS - A solid-state imaging device includes: a pixel part having a photoelectric conversion part photoelectrically converting incident light to obtain signal charge; and a peripheral circuit part formed on a periphery of the pixel part on a semiconductor substrate. The pixel part having a vertical transistor that reads out the signal charge from the photoelectric conversion part and a planar transistor that processes the signal charge read out by the vertical transistor. The vertical transistor has a groove part formed on the semiconductor substrate; a gate insulator film formed on an inner surface of the groove part; a conducting layer formed on a surface of the gate insulator film on the semiconductor substrate within and around the groove part; a filling layer filling an interior of the groove part via the gate insulator film and the conducting layer; and an electrode layer connected to the conducting layer on the filling layer. | 05-06-2010 |
20100116971 | BACK-ILLUMINATED CMOS IMAGE SENSORS - A back-illuminated image sensor includes a sensor layer disposed between an insulating layer and a circuit layer electrically connected to the sensor layer. An imaging area includes a plurality of photodetectors is formed in the sensor layer and a well that spans the imaging area. The well can be disposed between the backside of the sensor layer and the photodetectors, or the well can be a buried well formed adjacent to the backside of the sensor layer with a region including formed between the photodetectors and the buried well. One or more side wells can be formed laterally adjacent to each photodetector. The dopant in the well has a segregation coefficient that causes the dopant to accumulate on the sensor layer side of an interface between the sensor layer and the insulating layer. | 05-13-2010 |
20100116972 | PHOTOELECTRIC CONVERSION DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME - An object is to provide a photoelectric conversion device which can correct a difference between a measured light intensity and an actual light intensity, which occurs when output current decreases due to the fact that a strong light is received, and outputs the corrected current. The photoelectric conversion device includes a photoelectric conversion element; a photocurrent output circuit for providing a first current corresponding to the amount of incident light on the photoelectric conversion element; a photocurrent correcting circuit which includes a corrective photoelectric conversion element for providing a second current, the corrective photoelectric conversion element including a light shield film for blocking part of light; a photocurrent adder circuit which includes a circuit for providing a fourth current; and an amplifier circuit including a circuit which amplifies a current corresponding to the sum of the first current and the fourth current and outputs the amplified current. | 05-13-2010 |
20100123069 | BACKSIDE ILLUMINATED IMAGING SENSOR WITH IMPROVED ANGULAR RESPONSE - A backside illuminated imaging pixel with improved angular response includes a semiconductor layer having a front and a back surface. The imaging pixel also includes a photodiode region formed in the semiconductor layer. The photodiode region includes a first and a second n-region. The first n-region has a centerline projecting between the front and back surfaces of the semiconductor layer. The second n-region is disposed between the first n-region and the back surface of the semiconductor layer such that the second n-region is offset from the centerline of the first n-region. | 05-20-2010 |
20100148040 | GEIGER-MODE PHOTODIODE WITH INTEGRATED AND ADJUSTABLE QUENCHING RESISTOR, PHOTODIODE ARRAY, AND MANUFACTURING METHOD THEREOF - An embodiment of a Geiger-mode avalanche photodiode includes a body of semiconductor material having a first conductivity type, a first surface and a second surface; a trench extending through the body from the first surface and surrounding an active region; a lateral-isolation region within the trench, formed by a conductive region and an insulating region of dielectric material, the insulating region surrounding the conductive region; an anode region having a second conductivity type, extending within the active region and facing the first surface. The active region forms a cathode region extending between the anode region and the second surface, and defines a quenching resistor. The photodiode has a contact region of conductive material, overlying the first surface and in contact with the conductive region for connection thereof to a circuit biasing the conductive region, thereby a depletion region is formed in the active region around the insulating region. | 06-17-2010 |
20100171025 | WAVELENGTH-SENSITIVE DETECTOR WITH ELONGATE NANOSTRUCTURES - A wavelength-sensitive detector is provided that is based on elongate nanostructures, e.g. nanowires. The elongate nanostructures are parallel with respect to a common substrate and they are grouped in at least first and second units of a plurality of parallel elongate nanostructures. The elongate nanostructures are positioned in between a first and second electrode, the first and second electrodes lying respectively in a first and second plane substantially perpendicular to the plane of substrate, whereby all elongate nanostructures in a same photoconductor unit are contacted by the same two electrodes. Circuitry is added to read out electrical signals from the photoconductor units. The electronic density of states of the elongate nanostructures in each unit is different, because the material, of which the elongate nanostructures are made, is different or because the diameter of the elongate nanostructures is different. Each unit of elongate nanostructures therefore gives a different response to incident photons such that wavelength-specific information can be derived with the device. | 07-08-2010 |
20100176278 | OPTICAL NEURAL NETWORK - An input layer outputs light having a relatively narrow emission angle distribution to a middle layer as an output signal if the signal level of input signal is relatively high and outputs light having a relatively broad emission angle distribution to the middle layer as the output signal if the signal level of input signal is relatively low. The middle layer outputs light having a relatively narrow emission angle distribution as an output signal to an output layer if the signal level of the output signal from input layer is relatively high and outputs light having a relatively broad emission angle distribution to the output layer as an output signal if the signal level of the output signal from the input layer is relatively low. | 07-15-2010 |
20100181465 | Snapshot mode active pixel sensor - A snapshot pixel device with an active reset that operates in charge mode. | 07-22-2010 |
20100187408 | MATERIALS, SYSTEMS AND METHODS FOR OPTOELECTRONIC DEVICES - A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer. | 07-29-2010 |
20100193669 | SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING THE SAME, AND IMAGING APPARATUS - Realization of an adequate hole accumulation layer and reduction in dark current are allowed to become mutually compatible. A solid-state imaging device | 08-05-2010 |
20100193670 | SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE, METHOD OF DRIVING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - A solid-state imaging device includes: a substrate; a substrate voltage supply applying a first potential to the substrate during a light receiving period including first and second exposure periods different from each other and applying a second potential to the substrate during a no-light receiving period; and a plurality of pixels each including: a light receiving portion formed on a front surface side of the substrate and generating a signal charge in accordance with received light; a storage capacitor formed adjacent to the light receiving portion so that the signal charge generated in the light receiving portion is transmitted thereto and is stored and held therein when the first potential is applied to the substrate; dark current suppressing portions; an electronic shutter adjusting layer; a reading gate portion; and a vertical transmission register transmitting the signal charge read by the reading gate portion in the vertical direction. | 08-05-2010 |
20100200735 | OPTICAL READING SYSTEM - An optical sensor for detecting motion or movement in an area of interest is provided. The optical sensor includes a base having optical filtering properties. A sensor assembly having a light emitting diode, a CMOS sensor and a pair of lens is mounted to said base. The CMOS sensor has a range of wavelengths of light to which it has an increased sensitivity. The optical filtering properties of the base are ranged to absorb wavelengths of light in the range of increased CMOS sensor sensitivity. In this way, the effects of ambient light on the optical sensor are reduced. | 08-12-2010 |
20100207014 | PHOTOELECTRIC CONVERSION DEVICE AND METHOD OF MANUFACTURING THE SAME - A photoelectric conversion device comprises a semiconductor substrate and a multilayer wiring structure, wherein the multilayer wiring structure includes a first wiring layer which serves as a top wiring layer in an effective region and contains aluminum as a principal component, a first insulation film arranged in the effective region and an light-shielded region so as to cover the first wiring layer, and a second wiring layer which serves as a top wiring layer arranged on the first insulation film in the light-shielded region and contains aluminum as a principal component, and wherein the first insulation film has, in the effective region, a first portion which is positioned above the photoelectric conversion unit, and the first portion functions as at least a part of an interlayer lens. | 08-19-2010 |
20100213354 | SOLID-STATE IMAGING ELEMENT AND DRIVING METHOD OF THE SOLID-STATE IMAGE ELEMENT - Disclosed herein is a solid-state imaging element including: (A) a light reception/charge storage region formed in a semiconductor layer, the light reception/charge storage region including M light reception/charge storage layers stacked one on top of the other, where M≧2; (B) a charge output region formed in the semiconductor layer; (C) a conduction/non-conduction control region which includes a portion of the semiconductor layer located between the light reception/charge storage region and the charge output region; and (D) a conduction/non-conduction control electrode adapted to control the conduction or non-conduction state of the conduction/non-conduction control region, wherein mth potential control electrodes are provided between the mth and (m+1)th light reception/charge storage layers, where 1≦m≦(M−1), to control the potentials of the light reception/charge storage layers. | 08-26-2010 |
20100224765 | Photo Sensor With Pinned Photodiode and Sub-Linear Response - A photo sensor exhibiting low noise, low smear, low dark current and high dynamic range consists of a pinned (or buried) photodiode (PPD) with associated transfer gate (TG), a reset circuit ( | 09-09-2010 |
20100224766 | Solid-state image device manufacturing method thereof, and image capturing apparatus - A solid-state image device is provided which includes: a photoelectric conversion portion which obtains a signal charge by photoelectric conversion of incident light; a pixel transistor portion which outputs a signal charge generated by the photoelectric conversion portion; a peripheral circuit portion which is provided at the periphery of a pixel portion including the photoelectric conversion portion and the pixel transistor portion and which has an NMOS transistor and a PMOS transistor; a first stress liner film which has a compressive stress and which is provided on the PMOS transistor; and a second stress liner film which has a tensile stress and which is provided on the NMOS transistor. In the solid-state image device described above, the photoelectric conversion portion, the pixel transistor portion, and the peripheral circuit portion are provided in and/or on a semiconductor substrate. | 09-09-2010 |
20100258710 | OPTICAL SENSORS THAT REDUCE SPECTRAL REFLECTIONS - An optical sensor device, according to an embodiment of the present invention, includes a light source and a light detector. The light source includes one or more light emitting elements, and the light detector includes one or more light detecting elements. A first opaque light barrier portion, between the light source and the light detector, is configured to block light from being transmitted directly from the light source to the light detector. A second opaque light barrier portion, extending from the first opaque light barrier portion in a direction towards the light source, is configured to reduce an amount of specular reflections that would occur if a light transmissive cover plate were placed over the optical sensor device. A third opaque light barrier portion, extending from the first light barrier portion in a direction towards to the light detector, is configured to reduce an amount of specular reflections that would be detected by the light detector, if a light transmissive cover plate were placed over the optical sensor device. | 10-14-2010 |
20100294919 | PHOTON DETECTION SYSTEM AND METHOD OF PHOTON DETECTION - According to one embodiment, a photon detection system determines the number of detected photons. The detection system includes an avalanche photodiode and a measuring unit. The measuring unit measures an avalanche signal induced by illumination before the avalanche current through the device has saturated. | 11-25-2010 |
20100308212 | DIODE, PHOTODETECTOR CIRCUIT INCLUDING SAME, AND DISPLAY DEVICE - Each of even-numbered photodiodes | 12-09-2010 |
20100314531 | SCINTILLATOR AND DETECTOR ASSEMBLY - A detector comprising a photodetector including a single photon avalanche diode (SPAD), wherein the SPAD comprises a wide band-gap semiconductor material, and a quenching circuit electrically coupled to the photodetector comprising a first device, wherein the first device comprises a wide band-gap semiconductor material having a band-gap of at least about 1.7 eV at about 26° C. | 12-16-2010 |
20110036971 | PHOTOVOLTAIC DEVICES - A photovoltaic device includes a heterojunction between different semiconductor materials which are present in charge transporting layers. The device can include laterally-arranged electrodes. | 02-17-2011 |
20110049336 | SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREFOR, AND ELECTRONIC DEVICE - A solid-state imaging device includes: a plurality of substrates stacked via a wiring layer or an insulation layer; a light sensing section that is formed in a substrate, of the plurality of substrates, disposed on a light incident side and that generates a signal charge in accordance with an amount of received light; and a contact portion that is connected to a non-light incident-surface side of the substrate in which the light sensing section is formed and that supplies a desired voltage to the substrate from a wire in a wiring layer disposed on a non-light incident side of the substrate. | 03-03-2011 |
20110133060 | ACTIVE PIXEL SENSOR WITH NANOWIRE STRUCTURED PHOTODETECTORS - An imaging device formed as an active pixel array combining a CMOS fabrication process and a nanowire fabrication process. The pixels in the array may include a single or multiple photogates surrounding the nanowire. The photogates control the potential profile in the nanowire, allowing accumulation of photo-generated charges in the nanowire and transfer of the charges for signal readout. Each pixel may also include a readout circuit which may include a reset transistor, a charge transfer switch transistor, source follower amplifier, and pixel select transistor. A nanowire is generally structured as a vertical rod on the bulk semiconductor substrate to receive the light energy impinging onto the tip of the nanowire. The nanowire may be configured to function as either a photodetector or a waveguide configured to guild the light beam to the bulk substrate. In the embodiments herein, with the presence of the nanowire photogate and a substrate photogate, light of different wavelengths can be detected. | 06-09-2011 |
20110133061 | NANOWIRE PHOTO-DETECTOR GROWN ON A BACK-SIDE ILLUMINATED IMAGE SENSOR - An embodiment relates to a device comprising a substrate having a front side and a back-side that is exposed to incoming radiation, a nanowire disposed on the substrate and an image sensing circuit disposed on the front side, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire. | 06-09-2011 |
20110139966 | SOLID-STATE IMAGING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A solid-state imaging element includes a light-receiving element portion disposed in a semiconductor layer, an insulating layer made of a material having a refractive index n | 06-16-2011 |
20110139967 | APPARATUS, FOCUS DETECTION APPARATUS, AND IMAGE PICKUP SYSTEM - In a photoelectric conversion apparatus, an error can occur due to a voltage drop through a MOS transistor. In the photoelectric conversion apparatus, to reduce the error, a circuit block disposed between a unit pixel and an output line includes a differential amplifier circuit and a switch that is disposed in a feedback path of the differential amplifier circuit. | 06-16-2011 |
20110204214 | METHOD AND SYSTEM FOR DETECTING LIGHT - A light detection system is disclosed. The system comprises a light absorbing layer made of a semiconductor having majority carriers and minority carriers, and being incorporated with bandgap modifying atoms at a concentration selected so as to allow generation of photocurrent indicative of absorption of photons at any wavelength at least in the range of from about 3 μm to about 5 μm. | 08-25-2011 |
20110210237 | METHODS AND SYSTEMS FOR MEASURING THE FREQUENCY RESPONSE AND IMPULSE RESPONSE OF OBJECTS AND MEDIA - A method of optically probing an object(s) and/or a medium and/or an optical path. In some embodiments, a signal describing noisy light returned from an object(s) and/or a medium is analyzed. In some embodiments, this analysis includes spectral and/or temporal analysis. | 09-01-2011 |
20110226936 | PIXELS, IMAGERS AND RELATED FABRICATION METHODS - Pixels, imagers and related fabrication methods are described. The described methods result in cross-talk reduction in imagers and related devices by generating depletion regions. The devices can also be used with electronic circuits for imaging applications. | 09-22-2011 |
20110233386 | SINGLE-ELECTRON DETECTION METHOD AND APPARATUS FOR SOLID-STATE INTENSITY IMAGE SENSORS - Embodiments of the present invention include an electron counter with a charge-coupled device (CCD) register configured to transfer electrons to a Geiger-mode avalanche diode (GM-AD) array operably coupled to the output of the CCD register. At high charge levels, a nondestructive amplifier senses the charge at the CCD register output to provide an analog indication of the charge. At low charge levels, noiseless charge splitters or meters divide the charge into single-electron packets, each of which is detected by a GM-AD that provides a digital output indicating whether an electron is present. Example electron counters are particularly well suited for counting photoelectrons generated by large-format, high-speed imaging arrays because they operate with high dynamic range and high sensitivity. As a result, they can be used to image scenes over a wide range of light levels. | 09-29-2011 |
20110233387 | Light sensor circuit and driving method thereof - Embodiments provide a light sensor circuit for a flat panel display which improves resolution at low luminance and increases the range of sensible ambient light by divisionally driving a frame period, in which light is sensed, into a plurality of sub-frames, and a method of driving the light sensor circuit. | 09-29-2011 |
20110240835 | PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING METHOD THEREOF, AND CAMERA - A photoelectric conversion device comprises an n-type surface region, a p-type region which is formed under the surface region, and an n-type buried layer which is formed under the p-type region, wherein the surface region, the p-type region, and the buried layer form a buried photodiode, and a diffusion coefficient of a dominant impurity of the surface region is smaller than a diffusion coefficient of a dominant impurity of the buried layer. | 10-06-2011 |
20110248150 | DEVICE FOR QUANTIFYING AND LOCATING A LIGHT SIGNAL MODULATED AT A PREDETERMINED FREQUENCY - The invention concerns a device for quantifying and locating a light signal modulated at a predetermined frequency. According to the invention, it comprises a digital control unit ( | 10-13-2011 |
20110266420 | REDUCTION OF DELAY BETWEEN SUBSEQUENT CAPTURE OPERATIONS OF A LIGHT-DETECTION DEVICE - Disclosed are a system, a method and an apparatus of reduction of delay between subsequent capture operations of a light-detection device. In one embodiment, a light-detection circuit includes an avalanche photodiode implemented in a deep submicron CMOS technology. In addition, the light-detection circuit includes a passive quench control circuit to create an avalanche current that generates a high voltage at an output of a second inverter gate of the circuit. The light-detection circuit further includes an active quench control circuit to reduce a dead time of the circuit. The light-detection circuit also includes a reset circuit to create a low voltage at an output of the second inverter gate and to create an active reset through a PMOS transistor of the light-detection circuit. | 11-03-2011 |
20110272561 | METHOD OF DETECTING IMPINGING POSITION OF PHOTONS ON A GEIGER-MODE AVALANCHE PHOTODIODE, RELATED GEIGER-MODE AVALANCHE PHOTODIODE AND FABRICATION PROCESS - A Geiger-mode avalanche photodiode may include an anode, a cathode, an output pad electrically insulated from the anode and the cathode, a semiconductor layer having resistive anode and cathode regions, and a metal structure in the semiconductor layer and capacitively coupled to a region from the resistive anode and resistive cathode regions and connected to the output pad. The output pad is for detecting spikes correlated to avalanche events. | 11-10-2011 |
20110290988 | PHOTOSENSITIVE SYSTEM - Disclosed is a photosensitive system including a gated photodiode having at least one field plate and a cathode and an output buffer having an input coupled to the gated photodiode for reducing the impedance of the photodiode signal and having an output for providing the reduced impedance signal. The output is electrically connected to the at least one field plate. A device including such a photosensitive system is also disclosed. | 12-01-2011 |
20110297816 | METHOD AND APPARATUS FOR DARK CURRENT AND BLOOMING SUPRESSION IN 4T CMOS IMAGER PIXEL - A method and apparatus for operating an imager pixel that includes the act of applying a relatively small first polarity voltage and a plurality of pulses of a second polarity voltage on the gate of a transfer transistor during a charge integration period. | 12-08-2011 |
20110303829 | LIGHT SENSOR - The light dose received by perishable goods is an important parameter in determining the lifetime of those goods. A light sensor ( | 12-15-2011 |
20110309240 | POLARIZED LIGHT DETECTING DEVICE AND FABRICATION METHODS OF THE SAME - Described herein is a device operable to detect polarized light comprising: a substrate; a first subpixel; a second subpixel adjacent to the first subpixel; a first plurality of features in the first subpixel and a second plurality of features in the second subpixel, wherein the first plurality of features extend essentially perpendicularly from the substrate and extend essentially in parallel in a first direction parallel to the substrate and the second plurality of features extend essentially perpendicularly from the substrate and extend essentially in parallel in a second direction parallel to the substrate; wherein the first direction and the second direction are different; the first plurality of features and the second plurality of features react differently to the polarized light. | 12-22-2011 |
20110315861 | PHOTOELECTRIC CONVERSION DEVICE - It is an object to provide a photoelectric conversion device whose power consumption and a mounting area are reduced and yield is improved and further to provide a photoelectric conversion device whose number of manufacturing processes and manufacturing cost are reduced. A photoelectric conversion device includes a photoelectric conversion element for outputting photocurrent corresponding to illuminance, and a resistor changing resistance corresponding to illuminance. In the photoelectric conversion device, one terminal of the photoelectric conversion element and one terminal of the resistor are electrically connected in series; the other terminal of the photoelectric conversion element is connected to a high power supply potential; the other terminal of the resistor is connected to a low power supply potential; and a light intensity adjusting unit is provided on a light reception surface side of the photoelectric conversion element or the resistor to adjust illuminance. | 12-29-2011 |
20120006978 | LED/OLED ARRAY APPROACH TO INTEGRATED DISPLAY, LENSLESS-CAMERA, AND TOUCH-SCREEN USER INTERFACE DEVICES AND ASSOCIATED PROCESSORS - A system for implementing a display which also serves as one or more of a tactile user interface touchscreen, light field sensor, proximate hand gesture sensor, and lensless imaging camera. In an implementation, an OLED array can be used for light sensing as well as light emission functions. In one implementation a single OLED array is used as the only optoelectronic user interface element in the system. In another implementation two OLED arrays are used, each performing and/or optimized from different functions. In another implementation, an LCD and an OLED array are used in various configurations. The resulting arrangements allow for sharing of both optoelectric devices as well as associated electronics and computational processors, and are accordingly advantageous for use in handheld devices such as cellphone, smartphones, PDAs, tablet computers, and other such devices. | 01-12-2012 |
20120018624 | Photoelectric conversion module - A photoelectric conversion module includes a housing including a first wall and a second wall parallel to each other, a first circuit board and a second circuit board arranged between the first wall and the second wall, a spacer disposed between the first circuit board and the second circuit board, a first dust proofing member for sealing a gap between the first wall and the first circuit board and a gap between the spacer and the first circuit board, and a second dust proofing member for sealing a gap between the second wall and the second circuit board and a gap between the spacer and the second circuit board. The first circuit board includes a first holding portion for holding the first dust proofing member. The second circuit board includes a second holding portion for holding the second dust proofing member. | 01-26-2012 |
20120068053 | 2D/3D DUAL-MODE IMAGE SENSING CIRCUITRY - A 2D/3D dual-mode image sensing circuitry is composed of a photodiode, an active sensing unit, and a pull-down unit. The photodiode is to detect and convert optical signals into electronic signals. The active sensing unit is electrically connected with one end of the photodiode for receiving electronic signals outputted by the photodiode, having an output. The pull-down unit is electrically connected with the output, providing a pull-down path. The pull-down unit has a pull-down control terminal, by which the pull-down unit can be externally controllably switched on/off, for sinking the potential or not to the aforesaid end of the photodiode. In this way, as the 2D mode is switched on, the 3D mode is switched off; on the other hand, as the 3D mode is switched on, the 2D mode is switched off. | 03-22-2012 |
20120068054 | PHOTODETECTING DEVICE AND DISPLAY APPARATUS - Provided is a photodetecting device having a wider dynamic range with a simple configuration. A photodetecting device includes a photodiode (D | 03-22-2012 |
20120080584 | EUV LIGHT SOURCE WITH SUBSYSTEM(S) FOR MAINTAINING LPP DRIVE LASER OUTPUT DURING EUV NON-OUTPUT PERIODS - A device is disclosed herein which may comprise a droplet generator producing droplets of target material; a sensor providing an intercept time signal when a droplet reaches a preselected location; a delay circuit coupled with said sensor, the delay circuit generating a trigger signal delayed from the intercept time signal; a laser source responsive to a trigger signal to produce a laser pulse; and a system controlling said delay circuit to provide a trigger signal delayed from the intercept time by a first delay time to generate a light pulse that is focused on a droplet and a trigger signal delayed from the intercept time by a second delay time to generate a light pulse which is not focused on a droplet. | 04-05-2012 |
20120080585 | PHOTOELECTRIC CONVERSION ELEMENT, PRODUCTION METHOD THEREOF, PHOTOSENSOR, IMAGING DEVICE AND THEIR DRIVING METHOD - To provide a photoelectric conversion element capable of functioning as a photoelectric conversion element when a compound having a specific structure is applied to the photoelectric conversion element, causing the element to exhibit a low dark current, and reducing the range of increase in the dark current even when the element is heat-treated, and an imaging device equipped with such a photoelectric conversion element. A photoelectric conversion element having a photoelectric conversion film which is sandwiched between a transparent electrically conductive film and an electrically conductive film and contains a photoelectric conversion layer and an electron blocking layer, wherein the electron blocking layer contains a compound having, as a substituent, a substituted amino group containing three or more ring structures. | 04-05-2012 |
20120085891 | SINGLE PHOTON DETECTOR AND PHOTON NUMBER RESOLVING DETECTOR - Provided is a single photon detector and a photon number detector which use an APD and include an auxiliary signal generator, a light receiving element, a mixer, and a determiner The auxiliary signal generator generates an auxiliary signal. The light receiving element receives a photon to output an electric signal. The mixer receives and mixes an output signal of the light receiving element and the auxiliary signal. The determiner determines whether the photon is received or the number of received photons. The single photon detector and photon number resolving detector detect an avalanche of an amplitude less than the amplitude of a capacitive response. A probability that an after pulse is generated can be reduced. A photon count rate is enhanced. The influence on the waveform of the gate signal can be decreased. The frequency of the gate signal can be continuously changed. | 04-12-2012 |
20120085892 | PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR OPERATING THE SAME - In a photoelectric conversion device including a photodiode and a current mirror circuit, a diode-connected transistor is provided in parallel with the photodiode. The transistor serves as a leakage path for rapidly discharging charge stored in the gate capacitance in the current mirror circuit. Thus, the response speed of the photoelectric conversion device is increased, and output of an abnormal value is reduced. | 04-12-2012 |
20120104239 | PHOTON DETECTOR - Provided is a photon detector that enables an APD response by a sinusoidal wave-shaped gate signal and is operable at an arbitrary drive frequency without requiring a special band removing filter. The photon detector of the present invention includes: a sinusoidal wave generator ( | 05-03-2012 |
20120112045 | SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING TRANSISTOR - When a positive bias voltage is applied to a gate electrode of a transistor including an oxide semiconductor for longer than or equal to 10 msec, electric characteristics of the transistor, which have varied due to the light irradiation, can be brought to the state which is substantially the same as the state before the light irradiation. Note that a positive bias voltage is applied to the gate electrode of the transistor at an appropriate timing with reference to the amount of incident light received by the transistor. Accordingly, a display device in which a reduction in display quality is suppressed even when light irradiation is performed can be realized. | 05-10-2012 |
20120112046 | Visible Light Receiver Circuit - A visible light receiver circuit, which reduces the influence of ambient light, has a simple configuration, and generates low noise, is provided. The visible light receiver circuit includes a photoelectric conversion unit. The photoelectric conversion unit includes a photodiode having a cathode connected to a power source, a resistor connected in series to an anode of the photodiode, and a nonlinear resistive circuit connected in parallel to the resistor. The nonlinear resistive circuit includes, for example, a series circuit including a Zener diode and a resistor. | 05-10-2012 |
20120112047 | SENSOR CIRCUIT AND DISPLAY APPARATUS - A sensor circuit or a display apparatus from which a highly accurate sensor output can be obtained includes a photodiode, a capacitor that is connected to the photodiode via an accumulation node and accumulates charges according to an electric current in the photodiode; a sensor switching element transistor that causes the accumulation node and an output line to be conductive with respect to each other in response to a readout signal and outputs an output signal according to the potential of the accumulation node to the output line; a variable capacitor that is provided between the accumulation node and an input electrode, and whose capacitance varies when a pressure is applied by a touching operation; and a control switching element transistor to which a control signal for switching conduction and non-conduction between the variable capacitor and the accumulation node is input. | 05-10-2012 |
20120119072 | OPTICALLY PATTERNED VIRTUAL ELECTRODES AND INTERCONNECTS ON POLYMER AND SEMICONDUCTIVE SUBSTRATES - An optical electrical system that converts a photo image pattern to a conductance pattern comprises a photoconductive layer for receiving light image patterns and a conversion layer for converting an electrostatic voltage into a conductance pathway for a current flow. The light image pattern can be generated into a page sized area and generated from a light source comprising an array of projectors coupled together. | 05-17-2012 |
20120119073 | INPUT/OUTPUT DEVICE AND DRIVING METHOD THEREOF - An input/output device includes a pixel area; a light emission circuit provided in the pixel area and configured to emit light; and a photodetection circuit provided in the pixel area and configured to generate a voltage having a value corresponding to an intensity of incident light. The light emission circuit includes a drive transistor and a light emitting element. The light emitting element includes a first current terminal electrically connected to the source or the drain of the drive transistor and a second current terminal to which a first voltage is input, and emits light in accordance with a current flowing between the first and second current terminals. The light emission circuit includes a switching element including a first terminal to which a second voltage is input, and a second terminal electrically connected to the first current terminal of the light emitting element. | 05-17-2012 |
20120126101 | DETECTION CIRCUIT WITH ANTI-BLOOMING CIRCUIT - The detection circuit comprises a photodiode connected to a readout circuitry. The photodiode and readout circuitry are connected by means of a transistor arranged to operate as a closed switch when the readout circuitry biases the photodiode in a predefined range and to operate as an open switch in the other cases. | 05-24-2012 |
20120132790 | ELECTRONIC DEVICE HAVING PROXIMITY DETECTION FUNCTION - An electronic device having proximity detection function includes a front cover, a frame arranged under the front cover, a light emitter and a photo sensor received in the frame. A spacer is arranged between the front cover and the frame to prevent a portion of light from the light emitter from travelling to the photo sensor, when the front cover and the frame are not parallel. | 05-31-2012 |
20120132791 | METHOD FOR DRIVING PHOTOSENSOR, METHOD FOR DRIVING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE - This invention has for purpose to provide a photosensor that is small in size and can obtain high-contrast image data and to provide a semiconductor device including the photosensor. In the photosensor including a light-receiving element, a transistor serving as a switching element, and a charge retention node electrically connected to the light-receiving element through the transistor, the reduction in charge held in the charge retention node is suppressed by extending the fall time of the input waveform of a driving pulse supplied to the transistor to turn off the transistor. | 05-31-2012 |
20120138776 | DETECTION DEVICE COMPRISING A RUGGED TEST CIRCUIT - The detection device comprises a photodetector provided with first and second terminals. A readout circuit has an input coupled to the first terminal of the photodetector. A bias circuit imposes a bias on the terminals of the photodetector. A test circuit delivers a test current to the photodetector. The test circuit comprises a first transistor through which the test current flows. The first transistor presents a first main electrode connected to the input of the readout circuit and configured so as to have a junction diode opposing flow of the charge carriers when the photodetector is short-circuited. | 06-07-2012 |
20120138777 | OPTICAL INTERRUPTION SENSOR WITH OPPOSED LIGHT EMITTING DIODES - An optical-interrupter provides a mechanically integrated electric light source and electric light sensor positioned across a gap to transmit a light beam across the gap that may be interrupted with an opaque vane. The optical-interrupter uses conventional LEDs for both the light source and a light receiver. An integrated circuit comparator may be used to provide an adjustable threshold for the determination of whether the light beam is blocked. | 06-07-2012 |
20120160993 | SYSTEM AND METHOD FOR ANALYZING LIGHT BY THREE-PHOTON COUNTING - A system for measuring one or more characteristics of light of a photon energy E | 06-28-2012 |
20120175505 | Method and Device for Scanning-Microscopy Imaging of a Specimen - A method and a device for scanning-microscopy imaging of a specimen ( | 07-12-2012 |
20120187280 | LIGHT SENSOR HAVING IR SUPPRESSION FILTER AND TRANSPARENT SUBSTRATE - Techniques are described to furnish an IR suppression filter, or any other interference based filter, that is formed on a transparent substrate to a light sensor. In one or more implementations, a light sensor includes a substrate having a surface. One or more photodetectors are formed in the substrate. The photodetectors are configured to detect light and provide a signal in response thereto. An IR suppression filter configured to block infrared light from reaching the surface is formed on a transparent substrate. The light sensor may also include a plurality of color pass filters disposed over the surface. The color pass filters are configured to filter visible light to pass light in a limited spectrum of wavelengths to the one or more photodetectors. A buffer layer is disposed over the surface and configured to encapsulate the plurality of color pass filters and adhesion layer. | 07-26-2012 |
20120187281 | LIGHT SENSOR HAVING TRANSPARENT SUBSTRATE AND THROUGH-SUBSTRATE VIAS - Techniques are described to furnish an IR suppression filter that is formed on a glass substrate to a light sensor. In one or more implementations, a light sensor includes a substrate having a surface. One or more photodetectors are formed in the substrate and configured to detect light and provide a signal in response thereto. An IR suppression filter configured to block infrared light from reaching the surface is formed on a glass substrate. The light sensor also includes a plurality of color pass filters disposed over the surface. The color pass filters are configured to filter visible light to pass light in a limited spectrum of wavelengths to the one or more photodetectors. A buffer layer is disposed over the surface and configured to encapsulate the plurality of color pass filters and adhesion layer. The light sensor further includes through-silicon vias to provide electrical interconnections between different conductive layers. | 07-26-2012 |
20120193519 | OPTICAL RECEIVER HAVING VARIABLE BIAS FOR PHOTODIODE - An optical receiver is disclosed, in which a PD is biased by a positive feedback loop with respect to the photocurrent generated thereby. The optical receiver includes the PD, a current mirror to reflect the photocurrent into a mirror current, a current converter to convert the mirror current into a voltage signal, and a bias source stabilized by the negative feedback loop by sensing the output voltage thereof superposed with the voltage signal output by the current converter. The PD, the current mirror, the current converter and the bias source comprises the positive feedback loop for the photocurrent. | 08-02-2012 |
20120199727 | TITANIUM BLACK DISPERSION, PHOTOSENSITIVE RESIN COMPOSITION, WAFER LEVEL LENS, LIGHT BLOCKING FILM, METHOD FOR PRODUCING THE LIGHT BLOCKING FILM, AND SOLID-STATE IMAGE PICKUP ELEMENT - A titanium black dispersion includes titanium black particles, a dispersant, and an organic solvent. When the titanium black dispersion is for a wafer level lens, 90% or more of dispersed objects that consist of the titanium black particles have particle diameters of 30 nm or less, or dispersed objects including the titanium black particles contains Si atoms and the content ratio of Si atoms to Ti atoms (Si/Ti) in the dispersed objects is 0.05 or higher. When the titanium black dispersion is used for formation of a light-shielding film that is provided on one side of a silicon substrate having an image pickup device section on the other side, and that shields against infrared light, 90% or more of dispersed objects that consist of the titanium black particles have particle diameters of 30 nm or less. | 08-09-2012 |
20120205522 | MULTI-MODE PHOTODETECTOR - A photodetector includes a photodiode and output circuitry coupled to the photodiode. The photodetector is configurable for operation in at least two modes. A first configurable mode operates the photodetector as an integrating sensor. In this first mode, a bias voltage across the photodiode is set below the breakdown voltage of the photodiode and the output circuitry is configured to read an analog integration output voltage from the photodiode. A second configurable mode operates the photodetector as a single photon avalanche detector. In this second mode, the bias voltage across the photodiode is set above the breakdown voltage of the photodiode and the output circuitry is configured to read an avalanche output voltage. | 08-16-2012 |
20120205523 | AVALANCHE IMPACT IONIZATION AMPLIFICATION DEVICES - A semiconductor photodetector may provide charge carrier avalanche multiplication at high field regions of a semiconductor material layer. A semiconductor current amplifier may provide current amplification by impact ionization near a high field region. A plurality of metal electrodes are formed on a surface of a semiconductor material layer and electrically biased to produce a non-uniform high electric field in which the high electric field strength accelerates avalanche electron-hole pair generation, which is employed as an effective avalanche multiplication photodetection mechanism or as an avalanche impact ionization current amplification mechanism. | 08-16-2012 |
20120211646 | DEVICE AND METHOD FOR MEASURING LIGHT ENERGY RECEIVED BY AT LEAST ONE PHOTOSITE - A method is for measuring light energy received by a pixel including a transfer transistor, and a photodiode including a charge storage region. The method may include encapsulating the gate of the transfer transistor of the pixel in a semiconductor layer, at least one part of which includes a hydrogenated amorphous semiconductor. The method also may include grounding the charge storage region of the pixel, and determining the drift over time in the magnitude of the drain-source current of the transfer transistor. | 08-23-2012 |
20120223216 | STERILIZATION SYSTEM WITH ULTRAVIOLET EMITTER FOR ERADICATING BIOLOGICAL CONTAMINANTS - An exemplary sterilization system includes a self-propelled robotic mobile platform for locating and eradicating infectious bacterial and virus strains on floors (and objects thereon), walls, cabinets, angled structures, etc., using one or more ultraviolet light sources. A controller allows the system to adjust the quantity of ultraviolet light received by a surface by, for example, changing the intensity of energy input to a ultraviolet light source, changing a distance between a ultraviolet light source and a surface being irradiated, changing the speed/movement of the mobile platform to affect time of exposure, and/or by returning to contaminated areas for additional passes. The mobile platform may include a sensor capable of detecting fluorescence of biological contaminants irradiated with ultraviolet light to locate contaminated areas. The system is thus capable of “seek and destroy” functionality by navigating towards contaminated areas and irradiating those areas with ultraviolet light accordingly. | 09-06-2012 |
20120228481 | LENS SHEET AND PHOTOELECTRIC CONVERSION MODULE - A lens sheet is provided which is configured to create, below the lens sheet, a region not irradiated with light when light is incident on the lens sheet from above. A photoelectric conversion element is efficiently irradiated with light incident on the lens sheet. In addition, a high-efficiency photoelectric conversion module is provided. The lens sheet includes a light-transmitting substrate having lens arrays on both sides, and the lens arrays each have lens regions and non-lens regions placed alternately (in stripes), in which an end portion of each lens region on the front side overlaps with an end portion of each lens region on the back side. | 09-13-2012 |
20120235027 | OPTICAL ELEMENT AND A LIGHT DETECTION DEVICE AND AN OBJECT SENSING SYSTEM - An optical element for condensing light is provided, wherein the optical element has a first cylindrical face and a second cylindrical face at one side and a third cylindrical face at an other side and a plane including an axis of the first cylindrical face and an axis of the third cylindrical face intersects with a plane including an axis of the second cylindrical face and the axis of the third cylindrical face. A light detection device for detecting light is provided, wherein the light detection device includes the optical element as described above and an element for detecting light condensed by the optical element. | 09-20-2012 |
20120241599 | VOLTAGE OUTPUT CIRCUIT, CONNECTOR MODULE, AND ACTIVE CABLE - According to one embodiment, a circuit comprises a first resistor configured to have one end to which a first voltage is input and the other end which outputs a second voltage and a first amplifier configured to have an inverting input connected to the other end of the first resistor and a noninverting input to which a third voltage is input. The circuit further comprises a first capacitor configured to have one end to which an output of the first amplifier is input and the other end to which the other end of the first resistor is connected. An output of the first amplifier or an output of a second amplifier connected to the other end of the first resistor is a fourth voltage. In the circuit, the first resistor and a mirror capacitance composed of the first capacitor and the first amplifier constitute a low-pass filter. | 09-27-2012 |
20120248295 | PHOTODETECTOR - A photodetector disclosed herein comprises an avalanche transistor having a reference junction structure in which temperature characteristics of a current amplification factor are about the same as those of an avalanche photodiode and which is reverse-biased, and a current injection junction structure which injects a reference current to the reference junction structure and which is forward-biased. Voltages to be applied to the avalanche photodiode and the reference junction structure are controlled so that the amplification factor of the reference current amplified in the reference junction structure is retained at a predetermined value, whereby the temperature characteristics of the photodetector utilizing an avalanche effect can be stabilized. | 10-04-2012 |
20120256081 | RECEIVING CIRCUIT - According to a receiving circuit includes a light receiving element, a signal voltage generation portion, a comparator, a reference voltage generation portion and a switch. The light receiving element receives a light signal and outputs a light current corresponding to the light signal. The signal voltage generation portion converts the light current into a signal voltage and outputs the signal voltage. The comparator compares the signal voltage with a first threshold value or a second threshold value. The reference voltage generation portion outputs a reference voltage input to the comparator. The switch changes the reference voltage to one of the first threshold value and the second threshold value based on an output of the comparator. | 10-11-2012 |
20120273661 | APPARATUS AND METHOD FOR DECIDING ENTRANCE AND EXIT OF MOVING OBJECTS - Present invention proposes an apparatus and method for deciding entrance and exit of moving objects using two or more transmission units and only one reception unit which are installed on a gateway of a space to be measured. The two or more transmission units comprises a first transmission unit installed on one side surface of a gateway of a space to be measured to emit a first pulse in a first period; a second transmission unit installed in an inside direction of the space on the installation surface of the first transmission unit to emit a second pulse which has the first period and a phase that is different from a phase of the first pulse. | 11-01-2012 |
20120273662 | THREE-DIMENSIONAL COHERENT PLASMONIC NANOWIRE ARRAYS FOR ENHANCEMENT OF OPTICAL PROCESSES - A plasmonic grating sensor having periodic arrays of vertically aligned plasmonic nanopillars, nanowires, or both with an interparticle pitch ranging from λ/8−2λ, where λ is the incident wavelength of light divided by the effective index of refraction of the sample; a coupled-plasmonic array sensor having vertically aligned periodic arrays of plasmonically coupled nanopillars, nanowires, or both with interparticle gaps sufficient to induce overlap between the plasmonic evanescent fields from neighboring nanoparticles, typically requiring edge-to-edge separations of less than 20 nm; and a plasmo-photonic array sensor having a double-resonant, periodic array of vertically aligned subarrays of 1 to 25 plasmonically coupled nanopillars, nanowires, or both where the subarrays are periodically spaced at a pitch on the order of a wavelength of light. | 11-01-2012 |
20120280114 | MULTIFUNCTIONAL RADIOMETER, HOSPITAL EQUIPMENT, MULTIUSE MEASUREMENT TOOL, SYSTEM AND METHOD FOR MEASURING IRRADIANCE IN PHOTOTHERAPY - The present invention refers to a multifunctional radiometer having at least onen optical sensor ( | 11-08-2012 |
20120286144 | PHOTODIODE, PHOTODIODE ARRAY AND METHOD OF OPERATION - A photodiode comprises a semiconductor material having a p-n junction, the p-n junction being located between a first doping region of a first doping type and a second doping region of a second doping type, the second doping region comprising a highly doped layer and a lightly doped layer. A photodiode further comprises a voltage source being capable to apply a variable voltage between the first doping region and the lightly doped layer of the second doping region in order to vary the expansion of a space charge zone of the p-n junction. | 11-15-2012 |
20120292490 | LOW-FLUX AND LOW-NOISE DETECTION CIRCUIT - The detection circuit of the Source Follower per Detector type comprises a photodiode connected to an integration node. A biasing circuit makes it possible to bias the photodiode between a first reverse-bias state and a second floating state. A readout circuit is connected to the integration node for generating a signal representative of the scene observed by the photodiode. A metal shielding is arranged around the integration node. The metal shielding is connected to an output of the readout circuit configured to have a potential varying in the same direction as the potential at the integration node. | 11-22-2012 |
20120326012 | AVALANCHE IMPACT IONIZATION AMPLIFICATION DEVICES - A semiconductor photodetector may provide charge carrier avalanche multiplication at high field regions of a semiconductor material layer. A semiconductor current amplifier may provide current amplification by impact ionization near a high field region. A plurality of metal electrodes are formed on a surface of a semiconductor material layer and electrically biased to produce a non-uniform high electric field in which the high electric field strength accelerates avalanche electron-hole pair generation, which is employed as an effective avalanche multiplication photodetection mechanism or as an avalanche impact ionization current amplification mechanism. | 12-27-2012 |
20120326013 | LAMINATED CARDS WITH MANUAL INPUT INTERFACES - A laminated card is provided with manual input interfaces. Such manual input interfaces may provide tactile feedback to a user. Laminated cards may be provided as payment cards, identification cards, medical cards, or any other type of card. | 12-27-2012 |
20130009045 | Self-Aligned Contacts for Photosensitive Detection Devices - A unit cell for use in an imaging system may include a layer of semiconductor material and a contact formed on the layer of semiconductor material. The layer of semiconductor material may have a bandgap such that the layer of semiconductor material absorbs photons of a particular range of wavelengths, transmits photons that are not of the particular range of wavelengths, and generates a photocurrent, referenced to a ground common, in response to the absorbed photons. The layer of semiconductor material may be formed on a substrate that transmits photons incident thereon to the layer of semiconductor material. The contact may be electrically coupled to the layer of semiconductor material such that the photocurrent is conducted from one surface of the contact to an opposing surface of the contact. | 01-10-2013 |
20130056622 | ANALOG ELECTRONIC CIRCUIT FOR PROCESSING A LIGHT SIGNAL, AND CORRESPONDING PROCESSING SYSTEM AND METHOD - This analog electronic circuit ( | 03-07-2013 |
20130082167 | INFORMATION ACQUISITION DEVICE, INFORMATION ACQUISITION METHOD, RECORDING MEDIUM, AND INFORMATION ACQUISITION SYSTEM - Moving-objects movable in a workspace, each includes an imaging unit with a two-dimensional light receiving surface; and a decoding processing unit. If light received by an imaging surface of the imaging unit is brightness-modulated information, the decoding processing unit decodes the received light to the information. If the information decoded by the decoding processing unit contains spatial position information of moving-objects other than a self-moving-object, the self-moving-object receives the light from light sources, has the decoding processing unit decode the light to acquire pieces of position information of the other moving-objects, thereby acquiring position information of the self-moving-object in the workspace from these pieces of position information. | 04-04-2013 |
20130105670 | PULSED LASER SIGNAL DISRUPTING DEVICE INCORPORATING LED ILLUMINATOR | 05-02-2013 |
20130134298 | RADIATION DETECTION DEVICE WITH IMPROVED ILLUMINATION RANGE - A pixel comprises a photodetector and a control circuit. The pixel is provided with an output terminal designed to connect an analysis circuit. The photodetector is configured to have two different operating modes associated with different biasing conditions. A switch connecting the photodetector to the output terminal of the pixel and a circuit for a connecting/disconnecting the control circuit with the output terminal of the pixel and with the photodetector allow to switch between the two operating modes. A comparator compares the voltage across the capacitive load with respect to a threshold value and outputs first and second signals according to the comparison. The comparator is connected to the circuit for connecting/disconnecting the control circuit and to the switch. | 05-30-2013 |
20130168535 | TIME-DELAY INTEGRATION THROUGH REDUCTION OF DELAY BETWEEN SUBSEQUENT CAPTURE OPERATIONS OF A LIGHT-DETECTION DEVICE - Disclosed are a system, a method and an apparatus of reduction of delay between subsequent capture operations of a light-detection device. In one embodiment, a light-detection circuit includes an avalanche photodiode implemented in a deep submicron CMOS technology. In addition, the light-detection circuit includes a passive quench control circuit to create an avalanche current that generates a high voltage at an output of a second inverter gate of the circuit. The light-detection circuit further includes an active quench control circuit to reduce a dead time of the circuit. The light-detection circuit also includes a reset circuit to create a low voltage at an output of the second inverter gate and to create an active reset through a PMOS transistor of the light-detection circuit. | 07-04-2013 |
20130181119 | SHARED TIME OF FLIGHT PIXEL - A time of flight pixel includes a photodiode that accumulates charge in response to light incident upon the photodiode. A first transfer transistor is couple between the photodiode and a first charge storage device to selectively transfer charge to the first charge storage device from the photodiode. A second transfer transistor coupled between the photodiode and a second charge storage device to selectively transfer charge to the second charge storage device from the photodiode. An enable transistor is coupled between the first charge storage device and a readout node coupled to the second charge storage device to selectively couple the first charge storage device to the readout node. An amplifier transistor having a gate is also coupled to a readout node. | 07-18-2013 |
20130214135 | OPTICAL RECEIVER USING INFINITE IMPULSE RESPONSE DECISION FEEDBACK EQUALIZATION - A technique is provided for configuring an optical receiver. A photo detector is connected to a load resistor, and the photo detector includes an internal capacitance. A current source is connected through a switching circuit to the load resistor and to the photo detector. The current source is configured to discharge the internal capacitance of the photo detector. The switching circuit is configured to connect the current source to the internal capacitance based on a previous data bit. | 08-22-2013 |
20130234008 | Wireless Battery-Powered Daylight Sensor - A wireless battery-powered daylight sensor for measuring a total light intensity in a space is operable to transmit wireless signals using a variable transmission rate that is dependent upon the total light intensity in the space. The sensor comprises a photosensitive circuit, a wireless transmitter for transmitting the wireless signals, a controller coupled to the photosensitive circuit and the wireless transmitter, and a battery for powering the photosensitive circuit, the wireless transmitter, and the controller. The photosensitive circuit is operable to generate a light intensity control signal in response to the total light intensity in the space. The controller transmits the wireless signals in response to the light intensity control signal using the variable transmission rate that is dependent upon the total light intensity in the space. The variable transmission rate may be dependent upon an amount of change of the total light intensity in the space. In addition, the variable transmission rate may be further dependent upon a rate of change of the total light intensity in the space. | 09-12-2013 |
20130284905 | Radio Frequency Identification Sensor Assembly - An RFID sensor comprises an RFID chip, an antenna, and sensing material. The RFID chip is in electrical communication with the antenna and comprises an optical sensor. The sensing material overlies an upper surface of the RFID chip and is configured as a variable light filter that filters light differently depending upon certain properties or conditions of the environment surrounding the RFID sensor. A light source is configured to selectively illuminate the sensing material to facilitate detection of certain properties or conditions of the environment surrounding the RFID sensor. | 10-31-2013 |
20130299681 | Paper Size Detection Device And Detection Method Thereof - A paper size detection device includes a central switch, at least two switches disposed to two opposite sides of the central switch at intervals, and at least a sensor corresponding to the two switches located at the two opposite sides of the central switch. The sensor can be designated as a light sensor. One switch triggers the sensor and the other switch is without triggering the sensor under an original no paper condition. So that a detection method of the paper size detection device that uses N light sensors to judge N*2 papers' size can be realized by virtue of the above-mentioned setting structure, N is a positive integer, such as 2, 3, 4 and so on. Thus, the paper size detection device has a simple structure and a lower manufacture cost, and the detection method of the paper size detection device is simplified, accordingly. | 11-14-2013 |
20130313414 | SEMICONDUCTOR PHOTOMULTIPLIER AND READOUT METHOD - A silicon photomultiplier device is provided. The device comprises a plurality of photosensitive cells each having a photo-detector, a quench resistive load and a first stage capacitive load. The device is arranged in a three electrode connection configuration comprising first and second electrodes arranged to operably provide a biasing of the device and a third electrode operably used to readout a signal from the device. A second stage capacitive load is operably coupled to two or more photosensitive cells | 11-28-2013 |
20130341495 | METHOD AND DEVICE FOR DETECTING AN OBJECT WITH BACKGROUND SUPPRESSION - A background suppression device includes emitting means emitting a light beam emitted in a set direction and optoelectronic receiving means of a light beam reflected by an object providing a first and a second signal, and processing means which, in the detecting condition of the device, receives the first and second signal and provides an output information signal, in function of the first and second signal, indicating the presence or the absence of the object within an interval of set distances. The processing means stores, in a calibrating condition, the first and second signal and provides the output information signal in function of the first and/or of the second signal in the detecting condition and of the first and/or second signal in the calibrating condition. In the calibrating condition the object is absent and accordingly the first and second signal in the calibrating condition store the background. | 12-26-2013 |
20140021336 | OPTICAL PROXIMITY SWITCH - An optical proximity switch includes an optical transmitter for emitting a light signal, a transmitting lens with total internal reflection using the light signal to form and transmit a light beam , a receiver, an imaging receiving lens for receiving and transmitting to the receiver the light signal, and an electronic circuit for evaluating the light signal received by the receiver. | 01-23-2014 |
20140061444 | Proximity Sensor Package and Packing Method Thereof - A proximity sensor package and a packaging method thereof are disclosed. The proximity sensor package includes a light emitting unit and a light sensor. The light sensor has a first surface having a light sensing area. The light emitting unit is disposed on the first surface of the light sensor outside the light sensing area. | 03-06-2014 |
20140061445 | WIDEFIELD MICROSCOPE ILLUMINATION SYSTEM AND WIDEFIELD ILLUMINATION METHOD - A widefield microscope illumination system and a method for illumination, the system having a microscope objective with an optical objective axis, an illumination light source sending widefield illumination light along illumination beam paths having corresponding illumination axes along which the illumination light penetrates into the microscope objective through illumination light entry sites located within a predetermined illumination light entry area, a spatially resolving light detector detecting detected light sent from an illuminated sample through the microscope objective along a detected light beam path, and an automatic illumination light beam path manipulation device, controlled by a control system, which is arranged in front of the microscope objective in relation to the direction of the illumination light beam path, and by which illumination light beam path manipulation device the illumination axes are automatically movable at time intervals to a plurality of illumination light entry sites. | 03-06-2014 |
20140070078 | Optical Proximity Sensor With Ambient Light and Temperature Compensation - An electronic device may be provided with a proximity sensor. The proximity sensor may include a light source such as a light-emitting diode and a light detector such as a photodiode. The light-emitting diode may be driven with an alternating current drive signal so that alternating current light is produced. The alternating current light may reflect off of an external object and may be received by the photodiode. The photodiode may receive a direct current light signal associated with the presence of ambient light. The efficiency of the photodiode may be affected by the level of ambient light and the efficiency of the light-emitting diode may be affected by the temperature of the light-emitting diode. Ambient light correction circuitry and temperature correction circuitry may be used to ensure that proximity sensor readings are not adversely affected by changes in operating temperature and ambient lighting conditions. | 03-13-2014 |
20140070079 | PHOTODETECTOR CIRCUIT AND SEMICONDUCTOR DEVICE - To provide a photodetector circuit capable of obtaining signals in different periods without being affected by characteristics of a photoelectric conversion element. The photodetector circuit has n signal output circuits (n is a natural number of 2 or more) connected to the photoelectric conversion element. Further, the n signal output circuits each include the following: a transistor whose gate potential varies in accordance with the amount of light entering the photoelectric conversion element; a first switching element which holds the gate potential of the transistor; and a second switching element which controls a signal output from the transistor. Thus, after data based on the amount of light entering the photoelectric conversion elements is held as the gate potentials of the transistors, the second switching elements are turned on, whereby signals in different periods can be obtained without being affected by characteristics of the photoelectric conversion element. | 03-13-2014 |
20140103199 | Proximity Sensor Device With Internal Channeling Section - A proximity sensor device, which may detect the presence of external objects at close proximity is disclosed. The proximity sensor device may comprise an emitter, a detector, a separation wall and an internal channeling section. In one embodiment, the internal channeling section may be configured to direct light from the emitter to the detector when the external object is present at close proximity. In other embodiments, a proximity sensor assembly, an optical structure and an electronic device having similar internal channeling section are disclosed. | 04-17-2014 |
20140151535 | DEFLECTOR, OPTICAL SCANNER, AND SCANNING DISTANCE MEASURING EQUIPMENT - Scanning distance measuring equipment includes a light emitter/receiver and a deflector for deflecting and reflecting measurement light emitted from the light emitter/receiver to outside through an optical window. The deflector is provided with a first deflection mechanism including a movable unit swingable about a first axis and a drive unit for driving to swing the movable unit; a second deflection mechanism for driving to rotate the first deflection mechanism about a second axis perpendicular to the first axis; and a contactless power supply unit including a second coil that is located to rotate about the second axis along with the rotating second deflection mechanism, and a first coil that is located to face the second coil on a common axis. | 06-05-2014 |
20140203175 | OPTICAL I/O SYSTEM USING PLANAR LIGHT-WAVE INTEGRATED CIRCUIT - Photonic components are placed on the processor package to bring the optical signal close to the processor die. The processor package includes a substrate to which the processor die is coupled, and which allows the processor die to connect to a printed circuit board. The processor package also includes transceiver logic, electrical-optical conversion circuits, and an optical coupler. The electrical-optical conversion circuits can include laser(s), modulator(s), and photodetector(s) to transmit and receive and optical signal. The coupler interfaces to a fiber that extends off the processor package. Multiple fibers can be brought to the processor package allowing for a scalable high-speed, high-bandwidth interconnection to the processor. | 07-24-2014 |
20140231630 | METHOD AND APPARATUS FOR IMAGE SENSOR CALIBRATION - A photon sensitive device is provided with a voltage. A controller is configured to control a voltage source so as to cause at least one calibration voltage to be applied to the photon sensitive device in a calibration mode in order to determine the voltage to be provided by the voltage source in a normal mode of operation. | 08-21-2014 |
20140231631 | APPARATUS FOR PULSE SHAPING - An array of photon sensitive devices is configured to provide outputs. Pulse shaping circuits operate to shape a respective output of the array in a normal mode of operation and shape a calibration signal in a calibration mode of operation. | 08-21-2014 |
20140246568 | PHOTODIODE WITH DIFFERENT ELECTRIC POTENTIAL REGIONS FOR IMAGE SENSORS - An image sensor pixel is disclosed. The pixel may include a photodiode having a first region with a first potential and a second region with a second, higher potential, with the second region being offset in depth from the first region in a semiconductor chip. A storage node may be positioned at substantially the same depth as the second region of the photodiode. A storage gate may be operable to transfer charge between the photodiode and the storage node. | 09-04-2014 |
20140252212 | SIGNAL CONDITIONING CIRCUIT FOR A LIGHT SENSOR, A SENSOR ARRANGEMENT AND A METHOD FOR SIGNAL CONDITIONING FOR A LIGHT SENSOR - A signal conditioning circuit for a light sensor, in particular for an ambient light sensor, comprises a first integration stage (INT | 09-11-2014 |
20140263980 | IMAGERS WITH DEPTH SENSING CAPABILITIES - An imager may include depth sensing pixels that provide an asymmetrical angular response to incident light. The depth sensing pixels may each include a substrate region formed from a photosensitive portion and a non-photosensitive portion. The depth sensing pixels may include mechanisms that prevent regions of the substrate from receiving incident light. Depth sensing pixel pairs may be formed from depth sensing pixels that have different asymmetrical angular responses. Each of the depth sensing pixel pairs may effectively divide the corresponding imaging lens into separate portions. Depth information for each depth sensing pixel pair may be determined based on the difference between output signals of the depth sensing pixels of that depth sensing pixel pair. The imager may be formed from various combinations of depth sensing pixel pairs and color sensing pixel pairs arranged in a Bayer pattern or other desired patterns. | 09-18-2014 |
20140284460 | SCANNING ENDOSCOPE - There is provided a scanning endoscope including an optical scanning unit in which an angle at which illumination light is emitted from a leading edge of an insertion portion is changed to scan the emitted illumination light on an object, a plurality of light receiving portions which is circumferentially spaced apart at the leading edge of the insertion portion and receives return light returning from the object as a result of the optical scanning unit scanning the illumination light, a light detection unit that detects the intensity of the received return light, a return light selection unit that selects the return light whose intensity is equal to or smaller than a predetermined threshold, and a storage unit that stores the intensity of the return light selected by the return light selection unit in association with the position where the optical scanning unit scans the illumination light. | 09-25-2014 |
20140291491 | CALIBRATION OF TIME-OF-FLIGHT MEASUREMENT USING STRAY REFLECTIONS - Sensing apparatus includes a transmitter, which emits a beam comprising optical pulses toward a scene, and a receiver, which receives reflections of the optical pulses and outputs electrical pulses in response thereto. Processing circuitry is coupled to the receiver so as to receive, in response to each of at least some of the optical pulses emitted by the transmitter, a first electrical pulse output by the receiver at a first time due to stray reflection within the apparatus and a second electrical pulse output by the receiver at a second time due to the beam reflected from the scene, and to generate a measure of a time of flight of the optical pulses to and from points in the scene by taking a difference between the respective first and second times of output of the first and second electrical pulses. | 10-02-2014 |
20140306098 | DETECTOR APPARATUS - A detector apparatus that is embodied to receive light and to generate electrical signals has a housing and a detector arranged in the housing. The detector includes a light sensor that is embodied to receive light and to release electrons. The light sensor is at a lower electrical potential level than the housing; and that the detector is in thermally conductive contact with the housing via an electrically insulating intermediate arrangement, the thermal conduction direction inside the housing being opposite to the light propagation direction of the light to be detected. | 10-16-2014 |
20140312211 | OPTICAL COMMUNICATION APPARATUS - An optical communication apparatus includes a PCB, a photoelectric unit for emitting or receiving light carrying optical signals, a calculation and control unit, and a light waveguide for transmitting optical signals. The calculation and control unit controls the photoelectric unit, processes electrical signals, calculates based on the electrical signals, and controls the photoelectric unit to emit or receive light. The light waveguide is positioned on a surface of the PCB. The calculation and control unit includes a lapping plate lapping on the surface of the PCB. The lapping plate defines an opening exposing a portion of the light waveguide. The photoelectrical unit is positioned on the lapping plate covering the opening and is optically aligned with the light waveguide through the opening. | 10-23-2014 |
20140319327 | SOLAR CONCENTRATOR ASSEMBLY - A solar concentrator assembly includes a light splitting element, a light converging element, an optical fiber unit and a photoelectric unit. The light converging element is located between the light splitting element and the optical fiber unit. The optical fiber unit is located between the light converging element and the photoelectric unit. The light splitting element splits sunlight into light of different wavelengths. The light converging element converges the split light onto different focal points. The optical fiber unit transmits the converged light to the photoelectric unit. The photoelectric unit converts the light into electrical energy. | 10-30-2014 |
20140339401 | CMOS THREE-DIMENSIONAL IMAGE SENSOR DETECTORS HAVING REDUCED INTER-GATE CAPACITANCE, AND ENHANCED MODULATION CONTRAST - A CMOS detector with pairs of interdigitated elongated finger-like collection gates includes p+ implanted regions that create charge barrier regions that can intentionally be overcome. These regions steer charge to a desired collection gate pair for collection. The p+ implanted regions may be formed before and/or after formation of the collection gates. These regions form charge barrier regions when an associated collection gate is biased low. The barriers are overcome when an associated collection gate is high. These barrier regions steer substantially all charge to collection gates that are biased high, enhancing modulation contrast. Advantageously, the resultant structure has reduced power requirements in that inter-gate capacitance is reduced in that inter-gate spacing can be increased over prior art gate spacing and lower swing voltages may be used. Also higher modulation contrast is achieved in that the charge collection area of the low gate(s) is significantly reduced. | 11-20-2014 |
20150028193 | LASER SCANNING TYPE OBSERVATION APPARATUS - A laser scanning type observation apparatus includes a pulsed-laser oscillation means irradiating pulsed laser to an object, a detector receiving light from the object to output a detection signal, a means detecting pulsed-laser oscillation to output a synchronous signal, a circuit delaying the synchronous signal for an optional amount of time to output a trigger signal, a means sampling the detection signal in synchronization with the trigger signal, a memory storing the sampled detection signal, a setting unit capable of setting delay time for delaying the synchronous signal in two or more stages within one period of the synchronous signal, and a decision unit determining an optimum delay stage for image formation using data on intensities of the detection signal at the respective delay stages, wherein the setting means fixes delay time for delaying the synchronous signal at delay time corresponding to the delay stage determined by the decision unit. | 01-29-2015 |
20150034807 | ARRANGEMENT FOR OPTICAL MEASUREMENT OF A PROCESS VARIABLE AND MEASURING DEVICE COMPRISING SUCH AN ARRANGEMENT - An arrangement for optical measurement of at least one process variable in a medium, comprising: at least one light source; at least one light receiver; an optical sensor element at least one data processing unit; and a light conductor. The light conductor connects the light source with the optical sensor element and the optical sensor element with the light receiver. The light conductor is embodied with at least three arms, wherein the first arm is arranged at the light source, the second arm is arranged at the light receiver and the third arm is arranged at the optical sensor element first arm and the second arm combine to form the third arm. The invention relates further to a measuring device comprising an above described arrangement. | 02-05-2015 |
20150034808 | PHOTON DETECTOR - A photon detection system including a photon detector configured to detect single photons, a signal divider to divide the output signal of the photon detector into a first part and a second part, wherein the first part is substantially identical to the second part, a delay mechanism to delay the second part with respect to the first part, and a combiner to combine the first and delayed second parts of the signal such that the delayed second part is used to cancel periodic variations in the first part of the output signal. | 02-05-2015 |
20150060650 | OPTICAL-MICROWAVE-QUANTUM TRANSDUCER - An optical-microwave-quantum transducer can include a first nanophotonic slab and a second nanophotonic slab. Each of the first and second nanophotonic slabs can include an optical region and a superconducting region. The first nanophotonic slab can include a pair of torsional beams anchored to a substrate to allow relative rotation between the first and second nanophotonic slabs about an axis of rotation. The optical-microwave-quantum transducer can include a gap between the optical region of the first and second nanophotonic slabs that forms an optical cavity in response to an optical signal, wherein the optical cavity can induce mechanical oscillation of the first nanophotonic slab about the axis of rotation. The mechanical oscillation can induce electrical modulation on a superconducting cavity coupled to the superconducting regions of the first and second nanophotonic slabs. | 03-05-2015 |
20150076330 | Dual VPIN HDR Image Sensor Pexel - A CMOS photodiode device for use in a dual-sensitivity imaging pixel contains at least two areas of differential doping. Transistors are provided in electrical contact with these areas to govern operation of signals emanating from the photodiode on two channels, each associated with a different sensitivity to light. A plurality of such photodiodes may be incorporate into a shared arrangement forming a single pixel, in order to enhance the signals. | 03-19-2015 |
20150083898 | System and Method for Controlling Droplet Timing in an LPP EUV Light Source - A method and apparatus for improved control of the trajectory and timing of droplets of target material in a laser produced plasma (LPP) extreme ultraviolet (EUV) light system is disclosed. A droplet illumination module generates two laser curtains for detecting the droplets. The first curtain is used for detecting the position of the droplets relative to a desired trajectory to the irradiation site so that the position of a droplet generator may be adjusted to direct the droplets to the irradiation site, as in the prior art. A droplet detection module detects each droplet as it passes through the second curtain, determines when the source laser should generate a pulse so that the pulse arrives at the irradiation site at the same time as the droplet, and sends a signal to the source laser to fire at the correct time. | 03-26-2015 |
20150122977 | CENTRIFUGE FORCE MICROSCOPE MODULES AND SYSTEMS FOR USE IN A BUCKET OF A CENTRIFUGE - A centrifuge force microscope module for use within a bucket of a centrifuge in measuring a characteristic of a sample under a centrifugal force and/or in monitoring a sample under a centrifugal force. The centrifuge force microscope module includes an electronics module and an optical module. The electronics module includes a housing removably disposable in the bucket of the centrifuge, and at least one of a power source and a connector operably connectable to a power source for powering the electronics module. The optical module is operable to receive and direct light from the sample. The optical module is releaseably connectable to the housing of the electronics module. | 05-07-2015 |
20150129750 | SYSTEM FOR CONTINUOUS LASER BEAM MONITORING AND ANALYSIS - A system for continuously monitoring a laser beam includes a photodiode sensor mounted adjacent to a laser beam optical path. A laser beam optical path analysis module connected to the photodiode sensor and adapted to receive, analyze and report the sensor output from the photodiode sensor. | 05-14-2015 |
20150292938 | SYSTEM AND METHOD FOR NON-CONTACT OPTICAL-POWER MEASUREMENT - The present invention provides methods and systems for measuring optical power that require neither alterations to the optical fiber nor physical contact with the optical fiber, the system including an optical fiber configured to propagate an optical signal, wherein the optical fiber includes a core and at least a first cladding layer, wherein a portion of the optical signal scatters out of the optical fiber along a length of the optical fiber to form scattered fiber light; a detector system configured to receive the scattered fiber light along the length of the optical fiber and to output a detection signal based on the received scattered fiber light; and a processor configured to receive the detection signal and to determine a power value of the optical signal based on the received detection signal. | 10-15-2015 |
20150309163 | VEHICLE - A vehicle, provided with: at least an optical passage situated at a vehicle exterior for passing on optical signals; a number of elongate optical signal guides, extending between said passage and at least an optical signal processing unit situated in the vehicle, wherein the optical processing unit is provided with a transmitter for transmission of diverging optical signals; wherein an optical system is arranged to pass on light between the signal processing unit and proximal ends of at least a number of the optical signal guides, wherein the optical system comprises a collimator to collimate optical signals coming from the transmitter. | 10-29-2015 |
20150322707 | ACTIVE OBJECT DETECTION SENSOR - An active object detection sensor is provided which allows an installation worker to easily adjust a detection area, and further identify an optimum position of a guide mark in a touch detection area. The active object detection sensor used for opening/closing of automatic an opening/closing unit ( | 11-12-2015 |
20150331108 | OBJECT DETECTOR AND SENSING APPARATUS - An object detector and a sensing apparatus are provided. The object detector includes a light source, a light deflector configured to deflect light emitted from the light source, and a photodetector configured to detect the light that is deflected by the light deflector and then is reflected at an object, where the light deflector includes a plurality of reflection planes that rotate on a rotation axis, the reflection planes are oblique to the rotation axis and are rotationally symmetrical about the rotation axis, and the light that is emitted from the light source enters the light deflector in a direction parallel to the rotation axis. The sensing apparatus includes the object detector, and a monitoring controller configured to determine whether an object is present, and obtain movement information of the object including at least one of moving direction and moving speed of the object. | 11-19-2015 |
20150334321 | PHOTODETECTOR AND METHOD FOR DRIVING PHOTODETECTOR - Adverse effects of noise are reduced. A photodetector circuit, a difference data generation circuit, and a data input selection circuit are included. The photodetector circuit has a function of generating an optical data signal. A first data signal and a second data signal is input to the difference data generation circuit and the difference data generation circuit has a function of generating difference data of data of the first data signal and data of the second data signal. The data input selection circuit has a function of determining that the data of optical data signal is regarded as data of the first data signal or data of the second data signal. | 11-19-2015 |
20150338270 | DISCRIMINATING PHOTO COUNTS AND DARK COUNTS IN AN AVALANCHE PHOTODIODE - The output of an avalanche photodiode (APD) comprises a “photocurrent” component comprising photon initiated events resulting from the interaction of photons with the APD and a “dark current” component comprising dark carrier events arising in the APD even when the APD is not exposed to light. Differences in the pulse height distributions of photon initiated events and dark carrier initiated events are used to statistically discriminate between photocurrent and dark current components of APD output. | 11-26-2015 |
20150357503 | Method and Apparatus for High Resolution Photon Detection based on Extraordinary Optoconductance (EOC) Effects - The inventors disclose a new high performance optical sensor, preferably of nanoscale dimensions, that functions at room temperature based on an extraordinary optoconductance (EOC) phenomenon, and preferably an inverse EOC (I-EOC) phenomenon, in a metal-semiconductor hybrid (MSH) structure having a semiconductor/metal interface. Such a design shows efficient photon sensing not exhibited by bare semiconductors. In experimentation with an exemplary embodiment, ultrahigh spatial resolution 4-point optoconductance measurements using Helium-Neon laser radiation reveal a strikingly large optoconductance property, an observed maximum measurement of 9460% EOC, for a 250 nm device. Such an exemplary EOC device also demonstrates specific detectivity higher than 5.06×10 | 12-10-2015 |
20150364635 | SINGLE PHOTON COUNTING - A single photon counting apparatus comprising a SPAD and a controller. The controller is operable to vary the operating parameters of the SPAD during use in response to a count rate detected by the SPAD. The operating parameters comprising at least one of the voltage across the SPAD during an active period, the voltage across the SPAD during a quench period, the duration of the quench period and the temperature of the SPAD. Particle characterisation instruments comprising the apparatus are also disclosed. | 12-17-2015 |
20160011043 | Light to Frequency Converter Optical Sensor with Electronic Bias and Adjustable Gain | 01-14-2016 |
20160163886 | BIASING VOLTAGE GENERATING CIRCUIT FOR AVALANCHE PHOTODIODE AND RELATED CONTROL CIRCUIT - A biasing voltage generating circuit for generating a required reverse biasing voltage of an avalanche photodiode (APD) includes: a boost power converter configured to operably convert an input voltage into a higher output voltage according to a feedback signal and a reference signal, and to apply the output voltage to be a reverse biasing voltage of the APD; a reference signal generating circuit configured to operably generate the reference signal; and a control circuit. The control circuit includes: a signal sensing circuit configured to operably generate a sensed signal corresponding to an output current of the APD; an analog-to-digital converter (ADC) configured to operably convert the sensed signal into a digital signal; and a processing circuit configured to operably adjust the feedback signal or the reference signal according to the digital signal to thereby control the boost power converter to adjust the output voltage. | 06-09-2016 |
20160169793 | OPTICAL TESTING SYSTEM AND METHOD | 06-16-2016 |
20160190355 | Auto-Adjusting Device and Method for Adjusting Drive Voltage Light Receiver - An auto-adjusting device for adjusting a drive voltage of a light receiver includes an amplifier, an analog-to-digital converter, a determination control circuit and a boost circuit. The amplifier is configured to amplify an analog signal generated by the light receiver. The analog-to-digital converter is configured to convert the amplified analog signal to a digital signal. The determination control circuit is configured to process and determine the digital signal, and output a control signal when the processed digital signal satisfies a predetermined condition. The boost circuit is configured to receive the control signal and adjust the drive voltage of the light receiver. | 06-30-2016 |