| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 250370120 | Of material other than germanium, diamond, or silicon | 40 |
| 20080230710 | RADIATION DETECTOR AND METHOD FOR PRODUCING PHOTOCONDUCTIVE LAYER FOR RECORDING THEREOF - In a radiation detector, electrodes are provided on both sides of a photoconductive layer for recording. When the photoconductive layer for recording is irradiated with radiation during application of a predetermined bias voltage between the electrodes, electric charges are generated within the photoconductive layer for recording. Then, the generated electric charges are detected as an electric signal by the radiation detector. As the material for the photoconductive layer for recording, amorphous selenium having a coordination number of 1.95±0.02 is used. | 09-25-2008 |
| 20080237481 | Corrosion barrier layer for photoconductive X-ray imagers - Improved corrosion resistance for direct X-ray imaging detectors is obtained by providing a pixelated, electrically conductive barrier layer between the X-ray sensitive material and the pixel electrodes. Each barrier layer can cover part or all of its corresponding pixel electrode. In cases where pixel electrodes makes contact to underlying circuitry through vertical vias, it is preferred for the barrier layers to cover the via sections of the pixel electrodes. The barrier layers for each pixel electrode can be spaced apart from each other, or they can all be included within a continuous film on top of the pixel electrodes. Such a continuous film can be pixelated by spatially modulating its properties (e.g., thickness, doping) to significantly reduce lateral conductivity from pixel to pixel. | 10-02-2008 |
| 20090001277 | GaTe semiconductor for radiation detection - GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient. | 01-01-2009 |
| 20100065748 | X-RAY DETECTOR USABLE AT MICROWAVE FREQUENCIES - A detector of periodic packets of X photons, each packet having a duration shorter than 0.1 nanosecond, comprising a sensor comprising a semiconductor element of type III-V biased in a negative differential resistance region, said sensor being arranged in a resonant cavity tuned to a multiple of the packet repetition frequency. | 03-18-2010 |
| 20100163739 | RADIATION DETECTING SYSTEM - In a radiation detecting system including an electric voltage imparting electrode through which a bias electric voltage is applied, a recording photoconductive layer which comprises a-Se and generates electric charges in response to receipt of projection of radiation, a carrier collecting electrode, a charge storing portion which stores electric charges generated in the recording photoconductive layer and a switching element for reading out charge signal stored in the charge storing portion, superposed one on another in this order, an organic resin dielectric layer which is not smaller than 0.01 μm and smaller than 1 μm in thickness, not lower than 10 | 07-01-2010 |
| 20120001083 | OPTICAL DEMULTIPLEXING SYSTEM - Demultiplexing systems and methods are discussed which may be small and accurate without moving parts. In some cases, demultiplexing embodiments may include optical filter cavities that include filter baffles and support baffles which may be configured to minimize stray light signal detection and crosstalk. Some of the demultiplexing assembly embodiments may also be configured to efficiently detect U.V. light signals and at least partially compensate for variations in detector responsivity as a function of light signal wavelength. | 01-05-2012 |
| 20120018647 | DETECTION METHOD FOR TECHNETIUM 99 - A method of determining the presence of | 01-26-2012 |
| 20120153178 | METHODS AND COMPOSITIONS FOR THE DETECTION OF X-RAY AND GAMMA-RAY RADIATION - Compounds, methods and devices for detecting incident radiation, such as incident x-rays or gamma-rays, are provided. The detection of incident radiation can be accomplished by employing inorganic compounds that include elements with high atomic numbers, that have band gaps of at least about 1.5 eV, and that have an electrical resistivity of at least 10 | 06-21-2012 |
| 20130026379 | DIRECT CONVERSION X-RAY DETECTOR WITH RADIATION PROTECTION FOR ELECTRONICS - The present invention relates to an X-ray detector having an X-ray sensor (first X-ray sensor) converting X-radiation directly into electric charge carriers, having signal evaluation electronics electrically connected to the X-ray sensor and preferably formed as integrated circuit(s), having an X-ray absorber formed for protecting the signal evaluation electronics, and having a sensor carrier (first sensor carrier) formed and arranged for positioning the X-ray sensor relative to the X-ray absorber, wherein, viewed in the direction of incidence of the X-radiation, both the signal evaluation electronics are arranged behind the X-ray absorber and in the X-radiation shadow thereof and the X-ray sensor is admittedly likewise positioned by means of the sensor carrier preferably arranged between the X-ray absorber and the signal evaluation electronics at least sectionally behind the X-ray absorber, but outside the X-radiation shadow thereof. | 01-31-2013 |
| 20140097349 | STABILIZED THALLIUM BROMIDE RADIATION DETECTORS AND METHODS OF MAKING THE SAME - According to one embodiment, a crystal includes thallium bromide (TlBr), one or more positively charged dopants, and one or more negatively charged dopants. According to another embodiment, a system includes a monolithic crystal including thallium bromide (TlBr), one or more positively charged dopants, and one or more negatively charged dopants; and a detector configured to detect a signal response of the crystal. | 04-10-2014 |
| 20160087113 | NANO-ELECTRODE MULTI-WELL HIGH-GAIN AVALANCHE RUSHING PHOTOCONDUCTOR - Provided is a detector that includes a scintillator, a common electrode, a pixel electrode, and a plurality of insulating layers, with a plurality of nano-pillars formed in the plurality of insulating layers, a nano-scale well structure between adjacent nano-pillars, with a-Se separating the adjacent nano-pillars, and a method for operation thereof. | 03-24-2016 |
| 20180024254 | RADIATION DETECTOR | 01-25-2018 |
| 250370130 | Containing cadmium telluride | 28 |
| 20080277589 | SEMICONDUCTOR RADIOACTIVE RAY DETECTOR, RADIOACTIVE RAY DETECTION MODULE, AND NUCLEAR MEDICINE DIAGNOSIS APPARATUS - The present invention provides a semiconductor radioactive ray detector having the excellent energy resolution or time precision, a radioactive detection module, and a nuclear medicine diagnosis apparatus. The semiconductor radioactive ray detector has a structure in which plate-like elements made of cadmium telluride and conductive members are alternately laminated and the plate-like element made of cadmium telluride and the conductive member are adhered to each other with a conductive adhesive agent, and the Young's modulus of the conductive adhesive agent is in the range from 350 MPa to 1000 MPa, while the conductive members are made from a material with the linear expansion coefficient of the conductive members in the range from 5×10 | 11-13-2008 |
| 20090001278 | Multi Colour Photon Detectors - Described herein is a multi-colour radiation detector that comprises a mesa-type multi-layered mercury-cadmium-telluride detector structure ( | 01-01-2009 |
| 20090095915 | PORTABLE RADIATION DETECTION SYSTEM AND METHOD - A radiation detection system includes a radiation detector and a DC/DC converter that induces an electric field in the radiation detector. A counter circuit outputs a pulse related to the energy of each incoming radiation event on the radiation detector. The peak amplitude of each pulse output by the counter circuit is converted into a digital equivalent value. A means for processing processes each digital equivalent value and counts a number of pulses output by the counter circuit over an interval of time. A port has one or more data lines connected to the means for processing and one or more power lines connected to the DC/DC converter. The port facilitates a connection to a host system which provides a single DC voltage to the DC/DC converter which converts the single DC voltage into a higher level voltage that induces the electric field in the radiation detector. | 04-16-2009 |
| 20090114831 | CDTE/CDZNTE RADIATION IMAGING DETECTOR AND HIGH/BIASING VOLTAGE MEANS - A CdTe or CdZnTe radiation imaging detector and high voltage bias part for applying a high voltage to the continuous electrode to ensure stable performance of the detector. The high voltage bias part includes conductors of > | 05-07-2009 |
| 20090159807 | Orofacial radiation detection device for detection of radionuclide contamination from inhalation - The present invention provides an orofacial radiation detection device for detection of radionuclide contamination from inhalation. The device includes a face mask including a support frame and an adjustable head strap connected to the support frame. Mounted on the frame are radiation detectors in selected locations so that when being worn by a person, the detectors are located in close proximity to the orofacial region of the person including their nose and mouth. The device includes an electronic controller connected to the detectors for controlling operation of the radiation detectors. The device includes a microcomputer mounted on the support frame and electrically connected to the electronic controller for processing signals from the detectors for allowing input from an operator, performing data analysis and detection algorithms, and outputting results. The detectors include beta and gamma detectors that, utilizing appropriate hardware processing and software algorithms, are able to determine if radionuclides are present in the orofacial area of a person suspected to have been exposed to airborne contamination. | 06-25-2009 |
| 20090194701 | RADIOLOGICAL IMAGING APPARATUS - A radiological imaging apparatus using a semiconductor radiation detector to make it possible to reduce a radiation measurement off time that may result from an attempt to avoid polarization, the radiological imaging apparatus comprising a capacitor that applies a voltage to a semiconductor radiation detector that detects a radiation from a subject, first current regulated means for conducting a charge current to the capacitor, and second current regulated means for conducting a discharge current from the capacitor, or comprising a capacitor that applies a voltage to the semiconductor radiation detector, a first resistor that conducts a charge current to and a discharge current from the capacitor, and a second resistor connected in parallel with the first resistor to subject the capacitor to charging and discharging. | 08-06-2009 |
| 20090236535 | RADIATION DETECTOR WITH CO-PLANAR GRID STRUCTURE - A semiconductor radiation detector ( | 09-24-2009 |
| 20090321651 | ACF ATTACHMENT FOR RADIATION DETECTOR - A device includes (a) radiation detector including a semiconductor substrate having opposing front and rear surfaces, a cathode electrode located on the front surface of said semiconductor substrate, and a plurality of anode electrodes on the rear surface of said semiconductor substrate, (b) a printed circuit board, and (c) an electrically conductive polymeric film disposed between circuit board and the anode electrodes. The polymeric film contains electrically conductive wires. The film bonds and electrically connects the printed circuit board and anode electrodes. | 12-31-2009 |
| 20100032579 | METHOD OF PASSIVATING AND ENCAPSULATING CdTe AND CZT SEGMENTED DETECTORS - A method of forming a passivation layer comprises contacting at least one surface of a wide band-gap semiconductor material with a passivating agent comprising an alkali hypochloride to form the passivation layer on said at least one surface. The passivation layer may be encapsulated with a layer of encapsulation material. | 02-11-2010 |
| 20100116999 | High Resolution Imaging System - New sensors, pixel detectors and different embodiments of multi-channel integrated circuit are disclosed. The new high energy and spatial resolution sensors use solid state detectors. Each channel or pixel of the readout chip employs low noise preamplifier at its input followed by other circuitry. The different embodiments of the sensors, detectors and the integrated circuit are designed to produce high energy and/or spatial resolution two-dimensional and three-dimensional imaging for different applications. Some of these applications may require fast data acquisition, some others may need ultra high energy resolution, and a separate portion may require very high contrast. The embodiments described herein addresses these issues and also other issues that may be useful in two and three dimensional medical and industrial imaging. The applications of the new sensors, detectors and integrated circuits addresses a broad range of applications such as medical and industrial imaging, NDE and NDI, security, baggage scanning, astrophysics, nuclear physics and medicine. | 05-13-2010 |
| 20100163740 | RADIATION DETECTION APPARATUS - A semiconductor substrate is composed of a SiC crystal. A metal film having a desired area and serving as an incident surface onto which X-rays are made incident is formed on one surface of the semiconductor substrate. An electrode having the shape of a circle is formed at the central portion of the other surface of the semiconductor substrate. A ring-shaped electrode is formed in a portion near the circumference of the semiconductor substrate so as to surround the electrode. A predetermined direct voltage is applied to the metal film and the ring-shaped electrode. A voltage of a ground level is applied to the electrode. X-rays (γ-rays) that are made incident onto the metal film cause the generation of electron-hole pairs in the semiconductor substrate. The generated electrons are collected at the electrode and drawn as electric signals from an output terminal. | 07-01-2010 |
| 20100200764 | Radiation detector - A radiation detector includes a semiconductor element capable of detecting a radiation, a substrate on which the semiconductor element is mounted, and a flexible substrate including a connection pattern connected to an element electrode on an opposite side to the substrate of the semiconductor element. The semiconductor element is disposed on one surface of the substrate, and the flexible substrate is disposed on the opposite side to the substrate of the semiconductor element. | 08-12-2010 |
| 20100288936 | Stacked Crystal Array for Detection of Photon Emissions - A stacked crystal array includes a plurality of crystal slices and a plurality of interconnects. The interconnects have electrically conductive, spaced-apart and generally parallel elements joined by electrically conductive spacers extending generally orthogonally therebetween, the spacers being rotationally offset from each other by a predetermined angle. The array further includes a plurality of electrical insulators and an electrically insulative housing having a plurality of slots. The crystal slices, insulators and interconnects are arranged in the housing to form an assembly wherein the crystal slices are coupled together in a parallel electrical circuit. The assembly provides photon absorption comparable to a monolithic crystal having a thickness generally equivalent to the sum of the thicknesses of the crystal slices, but at a lower bias voltage. | 11-18-2010 |
| 20110049376 | SEMICONDUCTOR CRYSTAL BASED RADIATION DETECTOR AND METHOD OF PRODUCING THE SAME - A radiation detector includes a semiconductor crystal having a first surface and a second surface opposite to the first surface, a first electrode electrically coupled with the first surface of the semiconductor crystal to allow current to flow between the first electrode and the crystal, and an insulating layer on the first surface and between the semiconductor crystal and the first electrode so as to create a partially transmissive electrical barrier between the first electrode and the crystal. The insulating layer has a thickness ranging from about 50 nanometers to about 500 nanometers. | 03-03-2011 |
| 20110272589 | Hybrid Anode for Semiconductor Radiation Detectors - The present invention relates to a novel hybrid anode configuration for a radiation detector that effectively reduces the edge effect of surface defects on the internal electric field in compound semiconductor detectors by focusing the internal electric field of the detector and redirecting drifting carriers away from the side surfaces of the semiconductor toward the collection electrode(s). | 11-10-2011 |
| 20120080607 | RADIATION DETECTOR WITH INTEGRATED READOUT - The disclosure is directed at a radiation detector comprising a substrate layer of detector material; a set of readout electronics deposited and integrated on one side of the substrate layer; and a contact layer deposited on a side of the substrate layer opposite the set of readout electronics. | 04-05-2012 |
| 20120211663 | X-Ray Detectors Including Diffusion Barrier Films - An X-ray detector includes a photoconductor, a first diffusion barrier film on a first surface of the photoconductor, at least one pixel electrode on the first diffusion barrier film, a signal transmitting unit to process an electrical signal output from the at least one pixel electrode, and a common electrode on a second surface of the photoconductor opposite to the first surface of the photoconductor. | 08-23-2012 |
| 20120318995 | Stacked Crystal Array For Detection Of Photon Emissions - A stacked crystal array includes a plurality of crystal slices and a plurality of interconnects. The interconnects have electrically conductive, spaced-apart and generally parallel elements joined by electrically conductive spacers extending generally orthogonally therebetween, the spacers being rotationally offset from each other by a predetermined angle. The array further includes a plurality of electrical insulators and an electrically insulative housing having a plurality of slots. The crystal slices, insulators and interconnects are arranged in the housing to form an assembly wherein the crystal slices are coupled together in a parallel electrical circuit. The assembly provides photon absorption comparable to a monolithic crystal having a thickness generally equivalent to the sum of the thicknesses of the crystal slices, but at a lower bias voltage. | 12-20-2012 |
| 20130015361 | RADIOPHARMACEUTICAL CZT SENSOR AND APPARATUS - A gamma ray detector includes a gamma ray detecting rod elongated along a longitudinal axis, wherein gamma ray detection is enhanced along the longitudinal axis, and a gamma ray shield encapsulating the rod, the shield having an aperture at an end of the detecting rod along the longitudinal axis to admit gamma rays substantially parallel to the longitudinal axis of the elongated detecting rod, wherein gamma ray detection is enhanced along the longitudinal axis and aperture to substantially collimate the sensitivity of the gamma ray detector along the combined aperture and longitudinal axis of the detecting rod. | 01-17-2013 |
| 20130026380 | RADIATION DETECTOR WITH ANGLED SURFACES AND METHOD OF FABRICATION - Radiations detectors with angled walls and methods of fabrication are provided. One radiation detector module includes a plurality of sensor tiles configured to detect radiation. The plurality of sensor tiles have (i) top and bottom edges defining top and bottom surfaces of the plurality of sensor tiles, (ii) sidewall edges defining sides of the plurality of sensor tiles, and (iii) corners defined by the top and bottom edges and the sidewall edges. The radiation detector module also has at least one beveled surface having an oblique angle, wherein the beveled surface includes beveling of at least one of top or bottom edges, the side wall edges, or the corners. | 01-31-2013 |
| 20130126746 | ARRAY OF VIRTUAL FRISCH-GRID DETECTORS WITH COMMON CATHODE AND REDUCED LENGTH OF SHIELDING ELECTRODES - A novel radiation detector system is disclosed that solves the electron trapping problem by optimizing shielding of the individual virtual Frisch-grid detectors in an array configuration. | 05-23-2013 |
| 20130161523 | RADIATION DETECTOR WITH VOLTAGE-BIASED FOCUS GRID - A radiation detector is provided employing a focus grid electrode. The focus grid electrode is biased relative to one or more anode electrodes. In this manner, movement of electrons to the anode electrodes may be enhanced, such as due to a higher electrical field strength in a conversion material and/or due to focusing of the resulting electrical field on the anode electrodes. | 06-27-2013 |
| 20130193336 | MODIFICATION OF SOLID STATE CdZnTe (CZT) RADIATION DETECTORS WITH HIGH SENSITIVITY OR HIGH RESOLUTION OPERATION - An apparatus and process is provided to illustrate the manipulation of the internal electric field of CZT using multiple wavelength light illumination on the crystal surface at RT. The control of the internal electric field is shown through the polarization in the IR transmission image under illumination as a result of the Pockels effect. | 08-01-2013 |
| 20130214170 | FLAT PANEL DETECTOR INCORPORATING SILK LAYER(S) - One or more techniques and/or systems described herein implement, among other things, a flat panel detector component for detecting actinic and non-actinic radiation, or the formation thereof. The flat panel detector component comprises a plurality of layers, where at least one of the layers comprises silk. Further, a silk layer may be in direct physical contact with a radiation detection layer. | 08-22-2013 |
| 20140070109 | IONIZING RADIATION DETECTION - A detector array ( | 03-13-2014 |
| 20140209809 | RADIATION DETECTORS - The present disclosure provides a radiation detector, comprising: a semiconductor crystal for detecting radiation, the semiconductor crystal comprising a top surface, a bottom surface, and at least one side surface; at least one anode arranged on at least one of the top surface, the bottom surface, and the at least one side surface; and at least one cathode arranged on at least another one of the top surface, the bottom surface, and the at least one side surface, wherein the at least one anode each has a stripe shape, the at least one cathode each has a planar or curved shape, and the at least one cathode and the at least one anode extend in parallel with respect to each other to a length substantially equal to that of the anode. Such an electrode structure can improve energy resolution and detection efficiency of the radiation detector effectively. | 07-31-2014 |
| 20140217297 | Array of Virtual Frisch-Grid Detectors with Common Cathode and Reduced Length of Shielding Electrodes - A radiation detector system is disclosed that effectively solves the electron trapping problem by optimizing shielding of the individual virtual Frisch-grid detectors in an array configuration. | 08-07-2014 |
| 20160103234 | X-RAY DETECTORS HAVING PHOTOCONDUCTORS INCLUDING CURRENT RESISTANCE LAYERS - An X-ray detector may comprise: a substrate; a plurality of pixel electrodes on the substrate; a photoconductor covering the plurality of pixel electrodes; and/or a common electrode on the photoconductor. The photoconductor may comprise: at least two photoconductor layers; and/or a current resistance layer, between the at least two photoconductor layers, configured to reduce current flow between the at least two photoconductor layers. An X-ray detector may comprise: a plurality of photoconductor layers; and/or a current resistance layer, between the plurality of photoconductor layers, configured to reduce current flow between the plurality of photoconductor layers. | 04-14-2016 |
