Class / Patent application number | Description | Number of patent applications / Date published |
219444100 | Material is an electronic semiconductor device | 60 |
20080210680 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus of which through holes in a mounting stage can be properly sealed. A substrate processing apparatus comprises a plate-like mounting stage having a plurality of first through holes, a base member including a plurality of second through holes that have female thread portions, a plurality of pin-shaped members being passed through and fitted into the first and second through holes and including flange portions, a plurality of sealing surfaces, and a plurality of sealing members disposed such as to enclose openings of the first through holes. One ends of the pin-shaped members project out from the sealing surfaces, and the other ends have male thread portions capable of engaging with female thread portions of the base member. When the base member moves away from the mounting stage, an end of each of the female thread portions comes into abutment with an end of each of the male thread portions. | 09-04-2008 |
20080230535 | Susceptor - A susceptor [ | 09-25-2008 |
20080302781 | Processing Apparatus and Heater Unit - A processing apparatus has a placement stage that prevents generation of a crack due to heating of an embedded heater. The placement stage ( | 12-11-2008 |
20090001071 | Method and System for Cooling a Bake Plate in a Track Lithography Tool - A bake station includes a bake plate having a thickness defined by a distance between an upper surface and a lower surface of the bake plate. The bake plate is configured to heat a substrate positioned adjacent the upper surface of the bake plate. The bake station also includes a base plate having a first surface positioned below and opposing the lower surface of the bake plate and a side plate extending between the lower surface of the bake plate and the first surface of the base plate. The side plate, the lower surface of the bake plate, and the first surface of the base plate define a space. The bake station further includes a plurality of nozzles coupled to the base plate. Each of the plurality of nozzles has an inlet configured to receive an input flow of fluid and an exit port configured to expel an exit flow of fluid onto the lower surface of the bake plate. Additionally, the bake station includes an exhaust port in fluid communication with the space and configured to exhaust the exit flow of fluid from the space. | 01-01-2009 |
20090014431 | PLATE, APPARATUS FOR ADJUSTING TEMPERATURE OF SUBSTRATE HAVING THE PLATE AND APPARATUS FOR PROCESSING SUBSTRATE HAVING THE PLATE - In a plate for adjusting a temperature of a substrate, a body of the plate supports the substrate. A first channel and a second channel are disposed within the body of the plate. The first channel has a first inlet and a first outlet and passes therethrough a first fluid to adjust the temperature of the substrate. The second channel has a second inlet adjacent to the first outlet and a second outlet adjacent to the first inlet and passes therethrough a second fluid to adjust the temperature of the substrate. Further, the first and second channels are disposed side by side. Thus, the temperature of the substrate may be adjusted uniformly as a whole. | 01-15-2009 |
20090050621 | Wafer holder, heater unit used for wafer prober having the wafer holder, and wafer prober having the heater unit - A wafer holder that prevents positional deviation of the wafer mounted on the wafer-mounting surface of a chuck top and enables better thermal uniformity of the wafer, as well as a heater unit including the wafer holder and a wafer prober mounting these are provided. The wafer holder has a chuck top mounting and fixing the wafer and a supporter supporting the chuck top, and the chuck top has water absorption of at least 0.01% and preferably at least 0.1%. Preferable material of the chuck top is a composite of metal and ceramics, and particularly, a composite of aluminum and silicon carbide, or a composite of silicon and silicon carbide. | 02-26-2009 |
20090078694 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE STAGE USED THEREIN - The substrate stage according to the present invention stage includes a stage upon which a wafer is placed, a heater element installed within the stage, an upright support that ranges upright from a bottom of a processing chamber and is constituted with a tubular member that includes a small tube portion, a large tube portion and a middle portion present between the small tube portion and the large tube portion, an outer heat shield plate disposed so as to surround the outer side of the small tube portion and an inner heat shield plate disposed so as to close off an inner side of the large tube portion. The outer heat shield plate and the inner heat shield plate are disposed so that an inner edge of the outer heat shield plate and an outer edge of the inner heat shield plate overlap along the entire circumference. | 03-26-2009 |
20090139979 | PLACING TABLE STRUCTURE, METHOD FOR MANUFACTURING PLACING TABLE STRUCTURE AND HEAT TREATMENT APPARATUS - A mounting table structure capable of preventing cracks in a mounting table made of a ceramic material or at a joint portion between the mounting table and a column for supporting the mounting table. The mounting table structure includes a ceramic mounting table made of a ceramic material for mounting thereon a target object in order to perform a specific heat treatment on the target object in a processing chamber, and a supporting unit for supporting the mounting table. A quartz glass coating layer is formed on a surface of the mounting table while maintaining a compressive stress in a plane direction. As a result, cracks are prevented from occurring in a mounting table made of a ceramic material or at a joint portion between the mounting table and a column for supporting the mounting table. | 06-04-2009 |
20090152259 | Electrode tuning method and apparatus for a layered heater structure - A layered heater structure including an electrode layer and a localized tuning method for tuning the electrode layer of a layered heater structure with high precision is provided. The localized tuning method tunes the electrode layer to its proper local resistance to minimize temperature offsets on the heater surface and thus provide a desired thermal profile that is in marked contrast to conventional, non-localized resistance tuning approaches based on thickness trimming practices, such as grinding or blasting, or resistivity adjustment, such as local heat treatment. | 06-18-2009 |
20090159588 | HEATING APPARATUS - A heating apparatus | 06-25-2009 |
20090200288 | Heater - A heater has a smooth heating surface and a recess formed on a second surface opposite to the heating surface. The recess is formed between opposite side walls in a lengthwise direction of the heater. Formation of the recess improves the electrical resistance of the heater and the opposite side walls reinforce the heater and prevent deformation of the heater when it is subjected to high temperatures in a semiconductor wafer processing device. The heater has substantially the same width along its lengthwise direction. This improves the control of heat pattern design, because the terminal end portions do not have an expanded shape. | 08-13-2009 |
20090242544 | WAFER HEATING APPARATUS HAVING ELECTROSTATIC ATTRACTION FUNCTION - In a wafer heating apparatus having an electrostatic attraction function, a conductive heat generating layer is formed on one plane of a supporting substrate, and a conductive electrode for electrostatic attraction is formed on the other plane, and furthermore, an insulating layer is formed to cover the heat generating layer and the electrode for electrostatic attraction. The wafer heating apparatus has the electrostatic attraction function characterized in that the insulating layer covering the electrode for electrostatic attraction has a lower surface resistivity (ρsE) in a portion on the side of an object to be attracted compared with a surface resistivity (ρsE) in a portion on the side of the electrostatic attraction electrode. | 10-01-2009 |
20090242545 | WAFER THERMOMETER, TEMPERATURE MEASURING DEVICE, HEAT TREATMENT DEVICE AND METHOD FOR MEASURING TEMPERATURE OF HEAT TREATMENT UNIT - A wafer thermometer includes a wafer, a plurality of temperature sensors, a converter, a wafer data transmitter, and a photoelectric conversion element. The wafer has an upper surface divided to a plurality of regions. The plurality of temperature sensors are arranged at the plurality of regions, respectively. The converter is provided on the wafer and configured to convert signals output from the plurality of temperature sensors to temperature data. The wafer data transmitter is provided on the wafer and configured to transmit the temperature data converted by the converter. The photoelectric conversion element is provided on the wafer and configured to supply a current to the converter and the wafer data transmitter in response to light with which the photoelectric conversion element is irradiated. | 10-01-2009 |
20090266808 | PLANAR HEATER AND SEMICONDUCTOR HEAT TREATMENT APPARATUS PROVIDED WITH THE HEATER - A plane heater and a semiconductor heat treatment apparatus having the heater which suppress high frequency induction heating by having an earth electrode therein for suppressing high frequency induction and do not corrode with an excited reaction gas is provided. A plane heater | 10-29-2009 |
20090314762 | Multi-Zone Resistive Heater - Apparatus, reactors, and methods for heating substrates are disclosed. The apparatus comprises a stage comprising a body and a surface having an area to support a substrate, a shaft coupled to the stage, a first heating element disposed within a central region of the body of the stage, and at least second and third heating elements disposed within the body of the stage, the at least second and third heating elements each partially surrounding the first heating element and wherein the at least second and third heating elements are circumferentially adjacent to each other. | 12-24-2009 |
20100044364 | HEATING UNIT AND THE APPARATUS HAVING THE SAME - A heater unit that much improves accuracy in thermal uniformity of an object of heating during cooling, particularly rapid cooling, is provided. The heater unit in accordance with the present invention includes a heater substrate for mounting an object of heating and performing heat treatment thereon, and a cooling module for cooling the heater substrate, and between said heater substrate and the cooling module, an intervening body is arranged. Utilizing deformability of the intervening body, ratio of a non-contact portion can be reduced than when the intervening body is not provided, and temperature uniformity of the heater substrate at the time of cooling can be improved. | 02-25-2010 |
20100059500 | APPARATUS WITH STRAIN RELEASE FEATURE FOR HIGH TEMPERATURE PROCESSES - A method and apparatus for thermally treating a substrate is provided. A thermal treatment chamber has a substrate support and a magnetically permeable rotor housed in a rotor well. An annular cover shields the rotor from the processing environment. The annular cover has a thermal stress relief joint formed therein that provides one or more mechanical degrees of freedom to allow portions of the cover to shift with thermal stresses. In one embodiment, a gap is formed in the annular cover at the point of maximum thermal stress. | 03-11-2010 |
20100078424 | TEMPERATURE CONTROLLED SUBSTRATE HOLDER WITH NON-UNIFORM INSULATION LAYER FOR A SUBSTRATE PROCESSING SYSTEM - A substrate holder for supporting a substrate in a processing system includes a temperature controlled support base having a first temperature, and a substrate support opposing the temperature controlled support base and configured to support the substrate. Also included is one or more heating elements coupled to the substrate support and configured to heat the substrate support to a second temperature above the first temperature, and a thermal insulator disposed between the temperature controlled support base and the substrate support. The thermal insulator includes a non-uniform spatial variation of the heat transfer coefficient (W/m | 04-01-2010 |
20100133255 | APPARATUS FOR EFFICIENT REMOVAL OF HALOGEN RESIDUES FROM ETCHED SUBSTRATES - An apparatus for removing volatile residues from a substrate is provided. In one embodiment, an apparatus for removing halogen-containing residues from a substrate includes a chamber suitable for operating maintaining a vacuum therein and a heat module positioned to heat a substrate disposed in the chamber. The apparatus for removing halogen-containing residues from a substrate also includes at least one of A) a temperature controlled pedestal having a projection extending radially therefrom suitable for supporting the temperature control pedestal on a ledge of the chamber body, the projection thermally isolating the base from the chamber body; B) a pair of substrate holders that include two support flanges extending radially inward from an inner edge of an arc-shaped body, each support flange having a substrate support step that includes a sloped landing; or C) a domed window. | 06-03-2010 |
20100133256 | STAGE FOR SUBSTRATE TEMPERATURE CONTROL APPARATUS - A stage for a substrate temperature control apparatus having high responsibility at low cost by preventing thermal deformation of a plate while employing a material other than ceramics as a material of the plate. The stage for a substrate temperature control apparatus is a stage to be used for mounting a substrate in the substrate temperature control apparatus for controlling a temperature of the substrate, and the stage includes: a plate having a first surface facing the substrate and a second surface opposite to the first surface; and a planar heater bonded to the second surface of the plate, wherein surface treatment is performed in a first thickness on the first surface of the plate, and the surface treatment is performed in a second thickness thinner than the first thickness or no surface treatment is performed on a predetermined area of the second surface of the plate. | 06-03-2010 |
20100170884 | Wafer Heating Apparatus and Semiconductor Manufacturing Apparatus - A wafer heating apparatus which is capable of quickly cooling by improving the cooling rate of the heater section is provided. | 07-08-2010 |
20100200566 | HEATING APPARATUS - The present invention is to provide a heating apparatus available to reduce temperature quickly with efficient cooling effects in the case of reducing the temperature of a chamber or the like. A substrate processing apparatus | 08-12-2010 |
20120031892 | Heat Treatment Method, Recording Medium Having Recorded Program for Executing Heat Treatment Method, and Heat Treatment Apparatus - Disclosed is a method of a thermal processing including a first process and a second process. The first process between first wafer (initial wafer) W1 and second wafer (next wafer) W2 (and subsequent wafers W), comprises changing a set temperature of a heating plate from a first temperature to a second temperature which is lower than the first temperature; and initiating a thermal processing for a first substrate before the temperature of the heating plate reaches the second temperature. The second process comprises changing the set temperature of the heating plate from the second temperature to a third temperature which is higher than the second temperature, after the first process for the first substrate is completed; and initiating a thermal processing for a second substrate when the temperature of the heating plate is changed from the third temperature to the second temperature after the temperature of the heating plate reached the third temperature. | 02-09-2012 |
20130068750 | HEATING PLATE WITH DIODE PLANAR HEATER ZONES FOR SEMICONDUCTOR PROCESSING - A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar heater zone uses at least one diode as a heater element. A substrate support assembly in which the heating plate is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the heating plate include bonding together ceramic or polymer sheets having planar heater zones, power supply lines, power return lines and vias. | 03-21-2013 |
20130126515 | RADIATION SHIELDING FOR A SUBSTRATE HOLDER - A reaction chamber including a substrate supporting member positioned within the reaction chamber, the reaction chamber having a first region and a second region, a shield positioned within the second chamber and movable with the substrate supporting member, and wherein the shield is adjacent at least a bottom surface of the substrate supporting member. | 05-23-2013 |
20130134147 | SUBSTRATE SUPPORT DEVICE - A substrate support device formed of a metal and having a high withstand voltage and a high thermal resistance is provided. A substrate support device according to the present invention includes a plate section formed of a metal; a shaft section connected to the plate section and formed of a metal; a heating element provided in the plate section; and an insulating film formed on a first surface of the plate section, the first surface opposite to the shaft section, by ceramic thermal spraying. The substrate support device may further include an insulating film formed on a second surface of the plate section which intersects the first surface of the plate section approximately perpendicularly. | 05-30-2013 |
20130134148 | SUBSTRATE SUPPORT DEVICE - A substrate support device formed of a metal and having a high withstand voltage and a high thermal resistance is provided. A substrate support device according to the present invention includes a plate section formed of a metal; a shaft section connected to the plate section and formed of a metal; a heating element provided in the plate section; and an insulating film formed on a first surface of the plate section, the first surface opposite to the shaft section, by ceramic thermal spraying. The substrate support device may further include an insulating film formed on a second surface of the plate section which intersects the first surface of the plate section approximately perpendicularly. | 05-30-2013 |
20130220988 | HEATING DEVICE - A heating apparatus includes a susceptor having a heating face of heating a semiconductor and a supporting part joined with a back face of the susceptor. The susceptor comprises a ceramic material comprising magnesium, aluminum, oxygen and nitrogen as main components. The material comprises a main phase comprising magnesium-aluminum oxynitride phase exhibiting an XRD peak at least in 2θ=47 to 50° by CuKα X-ray. | 08-29-2013 |
20130228563 | ABSORPTION DEVICE FOR ROTATABLE HEATING - An absorption device for rotatable heating is provided with an absorption heating plate ( | 09-05-2013 |
20130248509 | HEATING DEVICE AND SEMICONDUCTOR MANUFACTURING APPARATUS - A heating device | 09-26-2013 |
20140014642 | Multiple Zone Heater - A multi-zone heater with a plurality of thermocouples such that different heater zones can be monitored for temperature independently. The independent thermocouples may have their leads routed out from the shaft of the heater in a channel that is closed with a joining process that results in hermetic seal adapted to withstand both the interior atmosphere of the shaft and the process chemicals in the process chamber. The thermocouple and its leads may be enclosed with a joining process in which a channel cover is brazed to the heater plate with aluminum. | 01-16-2014 |
20140014643 | Heating Device - A heating device includes a base plate and a face plate that is provided above the base plate and on which a wafer is placed. The face plate includes an aluminum substrate, a film heater that is provided to the aluminum substrate and heats the wafer, and a gap ball that is disposed on the aluminum substrate and interposed between the aluminum substrate and the wafer. The aluminum substrate is provided with a second attachment hole into which the gap ball is press-fitted. The gap ball is held only by an inner wall of the second attachment hole by being press-fitted. | 01-16-2014 |
20140014644 | Heating Device - A heating device includes a substrate in a form of a face plate that is positioned above a base plate, on which a wafer is placed, and to which a film heater for heating wafer is provided, columns that are vertically provided between the base plate and the face plate and support the face plate, and tension members that pull the face plate toward the base plate. The columns and the tension members are positioned to support or pull at least a part of the face plate corresponding to a placement region of the wafer. Each of the tension members includes a shaft having an upper end locked by the face plate and a lower end penetrating the base plate and a coil spring that is positioned on the base plate and biases the lower end of the shaft downward. | 01-16-2014 |
20140091077 | SUPPORTING UNIT, SUBSTRATE TREATING DEVICE INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SUPPORTING UNIT - Provided is a supporting unit. The supporting unit includes: a supporting plate including a substrate on a top surface thereof; and a heater having a predetermined pattern at a bottom surface of the supporting plate and heating the supporting plate, wherein the heater includes: a first metal plating layer applied on the bottom surface of the supporting plate along the predetermined pattern; an anti-oxidation layer of a conductive material applied on the first metal plating layer along the predetermined pattern; and a second metal plating layer of a conductive material applied on the anti-oxidation layer in a portion of the pattern. | 04-03-2014 |
20140097175 | Apparatus for Holding Semiconductor Wafers - Apparatus for holding semiconductor wafers during semiconductor manufacturing processes are disclosed. In one embodiment, the apparatus comprises a heat-conductive layer disposed on a supporting base. The apparatus also comprises a plurality of holes formed through the heat-conductive layer and the supporting base. The apparatus further comprises a plurality of heat-conductive lift pins that extend through the holes over the heat-conductive layer at the top end, and make a direct contact with a wafer substrate. The heat-conductive layer and the lift pins are connected to a heating circuit. | 04-10-2014 |
20140103027 | HEATED SUBSTRATE SUPPORT RING - Embodiments of substrate support rings are provided herein. In some embodiments, an apparatus for processing substrates includes, a ring configured to be disposed about a peripheral edge of a substrate support to support at least a portion of a substrate disposed atop the substrate support, wherein the ring comprises a heater; and a power supply coupled to the heater to provide power to the heater. | 04-17-2014 |
20140151360 | HEATER ASSEMBLY FOR DISK PROCESSING SYSTEM - A heater assembly for a disk processing system including a heater element configured to heat a substrate carried by a holder, and a heater cover having an aperture to expose the heater element to the substrate. The cover may be metal to thermally couple the heater to a cooling plate. The cover may have an outer surface having a thermal barrier surrounding the aperture to thermally insulate the holder. | 06-05-2014 |
20140263273 | CHAMBER APPARATUS AND HEATING METHOD - A chamber apparatus including a chamber which accommodates a substrate having a coating film formed thereon; a first heating part which is accommodated in the chamber and disposed on a first face side of the substrate; a second heating part which is accommodated in the chamber and disposed on a second face side of the substrate opposite to the first face; and a pressure control part which is capable of pressurizing and depressurizing inside of the chamber in a heated state. | 09-18-2014 |
20140263274 | METHODS OF FAULT DETECTION FOR MULTIPLEXED HEATER ARRAY - Described herein is a method of detecting fault conditions in a multiplexed multi-heater-zone heating plate for a substrate support assembly used to support a semiconductor substrate in a semiconductor processing apparatus. | 09-18-2014 |
20140319121 | SUPPORTING UNIT AND SUBSTRATE TREATMENT APPARATUS - Provided is a supporting unit supporting a substrate. The supporting unit includes a body including a plurality of heating regions and disposed with the substrate on a top surface thereof and a heating unit heating the body. Herein, the heating unit includes heating lines provided in the plurality of heating regions, respectively, to control temperatures of the plurality of heating regions independently from one another, terminals provided to the body and receiving power from the outside, and connecting lines connecting the heating lines to the terminals mutually corresponding to one another. Also, the terminals are disposed in one of the plurality of heating regions in a top view. | 10-30-2014 |
20150014297 | HEATING PLATE HAVING THERMAL SHOCK RESISTANCE AND CORROSION RESISTANCE - Disclosed herein is a heating plate of a heating device for a semiconductor manufacturing process, including: a metal matrix, which is composed of a Ni—Fe—Co alloy, and in which a heating element is buried; a first ceramic layer formed on one side of the metal matrix; and a second ceramic layer formed on the other side and circumference of the metal matrix. According to the heating plate for a semiconductor manufacturing process of the present invention, even when thermal shock caused by repetition of heating and cooling is applied to the metal matrix composed of a Ni—Fe—Co alloy, the heating plate can exhibit excellent thermal shock resistance because the consistency between the metal matrix and the ceramic layer made of AlN or the like is maintained, and can prevent the metal matrix from being damaged because the ceramic layer has excellent chemical resistance and wear resistance. Therefore, the heating device for a semiconductor manufacturing process, including the heating plate, can stably heat a semiconductor substrate during etching, deposition or the like. Further, this heating device is economically efficient compared to a conventional heating device including a heating plate made of aluminum nitride (AlN) as a major ingredient. Furthermore, this heating device can accomplish excellent temperature uniformity and can rapidly heat a semiconductor substrate to desired temperature in a small amount of electric power, when the ceramic layer is made of a material having high thermal conductivity such as AlN or the like. | 01-15-2015 |
20150060433 | HIGH TEMPERATURE PLATEN POWER CONTACT - A heated platen having a heating element and an electrical contact assembly for the heating element is generally described. Various examples provide a dielectric plate including a heating element and a terminal disposed therein. An electrical connection assembly configured to connect the heating element to a power source is also provided. The electrical connection including an electrical connection plug, a conductive sleeve disposed within the electrical connection plug, and a connector pin having a bottom portion and a top portion, the bottom portion disposed within the sleeve, the top portion having a spring structure, the spring structure configured to maintain electric contact with the terminal throughout a range of temperatures. | 03-05-2015 |
20150060434 | CHAMBER APPARATUS AND HEATING METHOD - Provided is a chamber apparatus which includes a chamber, in a part of which an internal space capable of accommodating a substrate therein is formed, a heating portion which heats the substrate disposed in the internal space, and a temperature adjustment portion which adjusts the temperature of a part of the chamber, which is in contact with the internal space. | 03-05-2015 |
20150069043 | ANNEAL MODULE FOR SEMICONDUCTOR WAFERS - An anneal module for annealing semiconductor material wafers and similar substrates reduces particle contamination and oxygen ingress while providing uniform heating including for 500° C. processes. The anneal module may include a process chamber formed in a metal body having internal cooling lines. A hot plate has a pedestal supported on a thermal choke on the body. A gas distributor in the lid over the hot plate flows gas uniformly over the wafer. A transfer mechanism moves a hoop to shift the wafer between the hot plate and a cold plate. | 03-12-2015 |
20150096973 | SUSCEPTOR HEATER AND METHOD OF HEATING A SUBSTRATE - A wafer processing apparatus may include a susceptor having a top side and a backside, a susceptor heater having a spacing member and a heating member, a shim removably mounted between the susceptor and the susceptor heater, a cavity formed by the susceptor backside, the susceptor heater, and the shim, a fluid inlet communicating with the cavity, and a plurality of fluid outlets communicating with the cavity. | 04-09-2015 |
20150136755 | OPTICAL DESIGN FOR LINE GENERATION USING MICROLENS ARRAY - Embodiments of the present disclosure relate to an apparatus for thermally processing a semiconductor substrate. In one embodiment, the apparatus includes a substrate support, a beam source having a fast axis for emitting a beam along an optical path intersecting the substrate support, and a homogenizer disposed along the optical path between the beam source and the substrate support. The homogenizer comprises a first lens array, and a second lens array, wherein lenses of the second lens array have a larger lenslet array spacing than lenses of the first lens array. | 05-21-2015 |
20150351158 | COMPOSITE SUBSTRATE FOR LAYERED HEATERS - A heater assembly for use in semiconductor processing that includes an application substrate; a heater substrate secured to the application substrate by a thermal bonding process; and a functional layer disposed onto the heater substrate by a layered process. In this heater assembly, the heater substrate defines a material having a coefficient of thermal expansion that is matched to a coefficient of thermal expansion of the functional layer. | 12-03-2015 |
20160011060 | BONDED ASSEMBLY WITH INTEGRATED TEMPERATURE SENSING IN BOND LAYER | 01-14-2016 |
20160083840 | GRAPHITE SUSCEPTOR - Embodiments described herein include a susceptor for semiconductor processing including an oriented graphite plate that may have a thickness of at least 1 mm. The susceptor may have a support member, and the oriented graphite plate may be disposed on the support member. The support member may have a center thermal conduit and an edge thermal conduit, and may be substantially solid between the center thermal conduit and the edge thermal conduit. | 03-24-2016 |
20160093519 | SUBSTRATE HEAT TREATMENT APPARATUS, SUBSTRATE HEAT TREATMENT METHOD, STORAGE MEDIUM AND HEAT-TREATMENT-CONDITION DETECTING APPARATUS - A substrate heat treatment apparatus includes: a placement unit on which a substrate is placed; a heat treatment unit for heating or cooling the substrate on the placement unit; a plurality of temperature sensors positioned correspondingly to a plurality of locations of the substrate on the placement unit; and a control unit. The control unit is configured to control the heat treatment unit based on temperatures detected by the temperature sensors, to calculate a position of a thermal center of gravity of the substrate based on the temperatures detected by the temperature sensors, and to detect heat treatment condition of the substrate based on the position of the thermal center of gravity. | 03-31-2016 |
20160099163 | SEMICONDUCTOR MANUFACTURING EQUIPMENT COMPONENT AND METHOD OF MAKING THE SAME - A method of making a semiconductor manufacturing equipment component, such as an electrostatic chuck, includes an application step of applying a photosensitive metal paste onto a ceramic green sheet, which is to become the body substrate, the photosensitive metal paste being a heating element material; an exposure-and-development step of exposing the photosensitive metal paste, which has been applied onto the ceramic green sheet, to light and developing the photosensitive metal paste to form an intermediate heating element, which is to become the heating element, on the ceramic green sheet; and a firing step of co-firing the ceramic green sheet and the intermediate heating element to form the body substrate and the heating element. | 04-07-2016 |
20160104634 | PLATEN ASSEMBLY - A platen assembly includes a base and a clamping layer fixed to the base. A portion of the base that faces the clamping layer and a portion of the clamping layer that faces the base define a gap between the base and the clamping layer. The gap is configured to circulate a fluid during a first operating mode and provide a thermal break during a second operating mode. The platen assembly is capable of operating over a wide temperature range. | 04-14-2016 |
20160118276 | HIGH DEFINITION HEATER AND METHOD OF OPERATION - An apparatus is provided, by way of example, a heater for use in semiconductor processing equipment, that includes a base functional layer having at least one functional zone. A substrate is secured to the base functional layer, and a tuning layer is secured to the substrate opposite the base functional layer. The tuning layer includes a plurality of zones that is greater in number than the zones of the base functional layer, and the tuning layer has lower power than the base functional layer. Further, a component, such as a chuck by way of example, is secured to the tuning layer opposite the substrate. The substrate defines a thermal conductivity to dissipate a requisite amount of power from the base functional layer. | 04-28-2016 |
20160118277 | HIGH DEFINITION HEATER AND METHOD OF OPERATION - A heater system is provided that includes a base functional layer having at least one functional zone. A substrate is secured to the functional member, and a tuning layer is secured to the substrate opposite the base functional layer. The tuning layer includes a plurality of zones that is greater in number than the zones of the base functional layer, and the tuning layer provides lower power than the base functional layer. A component is secured to the tuning layer opposite the substrate, and the substrate defines a thermal conductivity to absorb and dissipate a requisite amount of power from the base functional layer. A control system is also provided that has a plurality of addressable control elements in electrical communication with power lines and with the tuning layer, the control elements providing selective control of the tuning layer zones. | 04-28-2016 |
20160126125 | ELECTROSTATIC CHUCK - An electrostatic chuck includes: a body substrate having a substrate front surface and a substrate rear surface and made of ceramic; an attraction electrode provided in the body substrate; a metal base having a base front surface and a base rear surface, and placed such that the base front surface faces the substrate rear surface of the body substrate; and an internal through hole formed so as to penetrate the base front surface and the base rear surface of the metal base. The body substrate has a plurality of heating regions in each of which a heater electrode is provided. In the internal through hole, a plurality of heater electrode terminals are provided which are electrically connected to the heater electrode in each heating region. The plurality of heater electrode terminals provided in the internal through hole are electrically connected to a connection member provided in the internal through hole. | 05-05-2016 |
20160149482 | CONSOLIDATED FILTER ARRANGEMENT FOR DEVICES IN AN RF ENVIRONMENT - A system includes a plurality of elements that are to operate in a radio frequency (RF) environment. The system further includes a plurality of switching devices to operate in the RF environment, each of the plurality of switching devices to control power to at least one of the plurality of elements, wherein the plurality of switching devices are coupled to a power line that is to provide power from outside the RF environment. A filter is coupled to the power line to filter out RF noise introduced into the power line by the RF environment. The system further includes a converter, coupled to the one or more switching devices, to operate in the RF environment and to provide a non-conductive communication link between the one or more switching devices and a controller outside of the RF environment. | 05-26-2016 |
20180025932 | LAMINATED TOP PLATE OF A WORKPIECE CARRIER IN MICROMECHANICAL AND SEMICONDUCTOR PROCESSING | 01-25-2018 |
20190148185 | HEATING PLATFORM, THERMAL TREATMENT AND MANUFACTURING METHOD | 05-16-2019 |
20190148204 | ELECTROSTATIC CHUCK | 05-16-2019 |
20190148206 | ELECTROSTATIC CHUCK | 05-16-2019 |