| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 216090000 | Relative movement between the substrate and a confined pool of etchant | 8 |
| 20090283499 | Fabrication of semiconductor interconnect structure - An etching process for selectively etching exposed metal surfaces of a substrate and forming a conductive capping layer over the metal surfaces is described. In some embodiments, the etching process involves oxidation of the exposed metal to form a metal oxide that is subsequently removed from the surface of the substrate. The exposed metal may be oxidized by using solutions containing oxidizing agents such as peroxides or by using oxidizing gases such as those containing oxygen or ozone. The metal oxide produced is then removed using suitable metal oxide etching agents such as glycine. The oxidation and etching may occur in the same solution. In other embodiments, the exposed metal is directly etched without forming a metal oxide. Suitable direct metal etching agents include any number of acidic solutions. The process allows for controlled oxidation and/or etching with reduced pitting. After the metal regions are etched and recessed in the substrate surface, a conductive capping layer is formed using electroless deposition over the recessed exposed metal regions. | 11-19-2009 |
| 20090302003 | Aqueous Solution for Chemical Polishing and Deburring and Process for Polishing and Deburring A Part made of Pure Nickel or Nickel-200 Therein - An aqueous solution for polishing and deburring includes pure water; carboxylic acid of 200 gram per liter to 300 gram per liter; sulfuric acid ions of 200 gram per liter to 500 gram per liter; phosphoric acid ions of 100 gram per liter to 300 gram per liter; and nitric acid ions of 50 gram per liter to 200 gram per liter. Also, a process for polishing and deburring a part made of pure nickel or nickel-200 in the solution includes removing oily substance from the part; washing the part by water; pouring the solution into a bath and submerging the part in the solution so that the part is brought into contact with the solution; neutralizing the solution remained on the surface of the part to prevent the part from oxidizing; and drying the part to obtain a finished part. | 12-10-2009 |
| 20100176089 | CONFINEMENT OF FLUIDS ON SURFACES - The invention is directed to a device for applying a fluid to a surface, the device comprising a first conduit for directing a flow of a first fluid towards the surface and a second conduit for directing a flow of a second fluid away from the surface, the first conduit being arranged relative to the second conduit such that in operation of the device the second fluid comprises substantially the first fluid, and wherein said first conduit comprises a first aperture and the second conduit comprises a second aperture, the first aperture arranged at a distance from the second aperture. | 07-15-2010 |
| 20140042124 | FILM REMOVING METHOD, NOZZLE FOR REMOVING FILM, AND FILM REMOVING DEVICE - A film in a dry state is efficiently dissolved and removed. A film removing method includes steps of moving a nozzle head ( | 02-13-2014 |
| 20160035587 | ULTRASONIC TANK AND METHODS FOR UNIFORM GLASS SUBSTRATE ETCHING - In some embodiments, an ultrasonic tank includes a container, an etching solution tank comprising a working area disposed within the container, and a plurality of ultrasonic transducers arranged about a perimeter of the etching solution tank in a configuration that provides a standard deviation of ultrasonic power within the working area of less than about 0.35. | 02-04-2016 |
| 216091000 | Rotating, repeated dipping, or advancing movement of substrate | 3 |
| 20080296262 | Process and Device for Cleaning and Etching a Substrate Wi - A simple process is disclosed for treating substrates having pre-structured zinc oxide layers on rigid or flexible supports. The ZnO is treated with an etching medium then with a cleaning liquid. The treatment with the etching and cleaning liquids is carried out while the substrate is conveyed through a device. The process is technically simple to implement and makes it possible to regularly and homogeneously roughen and texturise ZnO layers of up to 1 m | 12-04-2008 |
| 20120067848 | APPARATUS AND METHOD FOR WET PROCESSING SUBSTRATE - An exemplary wet processing apparatus includes a tank, a conveyor configured for conveying a substrate, and a spraying system. The tank receives a wet processing liquid. The conveyor includes a first conveying portion, a second conveying portion, and a third conveying portion. The first conveying portion is in the tank and conveys the substrate in the wet processing liquid. The second conveying portion is obliquely interconnected between the first and third conveying portions. The third conveying portion conveys the substrate above the wet processing liquid in the tank. The spraying system is above the third conveying portion, sprays the wet processing liquid onto the substrate on the third conveying portion. | 03-22-2012 |
| 20130200044 | PATTERNING - A method for patterning an article, the article comprising a first layer of a first material, the method comprising providing a thread carrying a first species, e.g. a solvent in which the first material is soluble, and contacting the thread with the first layer to remove at least part of the first layer. | 08-08-2013 |
