Class / Patent application number | Description | Number of patent applications / Date published |
216087000 | Irradiating, ion implanting, alloying, diffusing, or chemically reacting the substrate prior to ethching to change properties of substrate toward the etchant | 16 |
20090065481 | METHOD OF PROCESSING SILICON SUBSTRATE AND METHOD OF MANUFACTURING LIQUID DISCHARGE HEAD - A method of manufacturing a substrate for a liquid discharge head having a silicon substrate in which a liquid supply port is provided includes providing the silicon substrate, an etching mask layer having an opening being formed on a one surface of the silicon substrate, forming a region comprising an amorphous silicon in the interior of the silicon substrate by irradiating the silicon substrate with laser light, forming a recess, which has an opening at a part of a portion exposed from said opening on said one surface, from said one surface of the silicon substrate toward the region, and forming the supply port by performing etching on the silicon substrate in which the recess and the region have been formed from said one surface through the opening of the etching mask layer. | 03-12-2009 |
20100213173 | BEVEL PLASMA TREATMENT TO ENHANCE WET EDGE CLEAN - The various embodiments described in the specification provide improved mechanisms of removal of unwanted deposits on the bevel edge to improve process yield. The embodiments provide apparatus and methods of treating the bevel edge of a copper plated substrate to convert the copper at the bevel edge to a copper compound that can be wet etched with a fluid at a high etch selectivity in comparison to copper. In one embodiment, the wet etch of the copper compound at high selectivity to copper allows the removal of the non-volatile copper at substrate bevel edge in a wet etch processing chamber. The plasma treatment at bevel edge allows the copper at bevel edge to be removed at precise spatial control to about 2 mm or below, such as about 1 mm, about 0.5 mm or about 0.25 mm, to the very edge of substrate. In addition, the apparatus and methods described above for bevel edge copper removal do not have the problems of copper etching fluid being splashed on the device regions to cause defects and thinning of copper films. Therefore, device yield can be greatly improved. | 08-26-2010 |
20110056914 | PROCESS FOR THE STRIPPING OF WORKPIECES AND STRIPPING SOLUTION - A material mixture for dissolving a coating system from a work piece comprises an aqueous, alkaline solution containing between 3 and 8 weight percent KMnO | 03-10-2011 |
20110108525 | METHOD AND SYSTEM FOR MANUFACTURING MICROSTRUCTURE IN PHOTOSENSITIVE GLASS SUBSTRATE - The present invention provides a method and system for manufacturing a microstructure in a photosensitive glass substrate, which include the steps of generating first femtosecond laser pulses by a femtosecond laser source and focusing the first femtosecond laser pulses on a surface or an interior of the photosensitive glass substrate by a focus lens to define a modified region; generating second femtosecond laser pulses by the femtosecond laser source, adjusting a frequency of the second femtosecond laser pulses to be higher than that of the first femtosecond laser pulses by a frequency adjustment unit and an energy adjustment unit; focusing the adjusted second femtosecond laser pulses on the modified region of the photosensitive glass substrate to crystallize a substance of the modified region; and, after crystallization, etching off the crystallized region to obtain the microstructure in the photosensitive glass substrate. | 05-12-2011 |
20120125892 | LASER PROCESSING METHOD - A laser processing method for forming a hole in a sheet-like object to be processed made of silicon comprises a depression forming step of forming a depression in a part corresponding to the hole on a laser light entrance surface side of the object, the depression opening to the laser light entrance surface; a modified region forming step of forming a modified region along a part corresponding to the hole in the object by converging a laser light at the object after the depression forming step; and an etching step of anisotropically etching the object after the modified region forming step so as to advance the etching selectively along the modified region and form the hole in the object; wherein the modified region forming step exposes the modified region or a fracture extending from the modified region to an inner face of the depression. | 05-24-2012 |
20120125893 | LASER PROCESSING METHOD - In a method comprising a modified region forming step of converging a laser light at a sheet-like object to be processed made of silicon so as to form a plurality of modified spots within the object along a modified region forming line tilted in a first lateral direction with respect to a thickness direction of the object and the plurality of modified spots construct a modified region, and an etching step of anisotropically etching the object after the modified region forming step so as to advance the etching selectively along the modified region and form the object with a space extending obliquely with respect to the thickness direction, the modified region forming step forms the plurality of modified spots such that the modified spots adjacent to each other at least partly overlap each other when seen in the first lateral direction. | 05-24-2012 |
20140217066 | SILICON SUBSTRATE PROCESSING METHOD, ELEMENT EMBEDDED SUBSTRATE, AND CHANNEL FORMING SUBSTRATE - A silicon substrate processing method includes forming an etching mask which has an opening portion, on a surface of a silicon substrate, forming an etching guide hole in the opening portion on the silicon substrate, and forming a through-hole which passes through the silicon substrate, by applying an etching treatment onto the silicon substrate in which the etching guide hole is formed. In the forming of the guide hole, the etching guide hole passing through the silicon substrate is formed by irradiating the opening portion with a laser beam a plurality of times, with a cooling period between each instance of irradiation with the laser beam. | 08-07-2014 |
20140326702 | METHOD OF MANUFACTURING BASE BODY HAVING MICROSCOPIC HOLE, AND BASE BODY - A method of manufacturing a base body having a microscopic hole, includes: forming at least one of a first modified region and a second modified region by scanning inside of a base body with a focal point of a first laser light having a pulse duration on order of picoseconds or less; forming a periodic modified group formed of a plurality of third modified regions and fourth modified regions by scanning an inside of the base body with a focal point of a second laser light having a pulse duration on order of picoseconds or less; obtaining the base body which is formed so that the first modified region and the second modified region overlap or come into contact with the modified group; and forming a microscopic hole by removing the first modified region and the third modified regions by etching. | 11-06-2014 |
20150122777 | ELECTROLESS PLATING METHOD USING HALIDE - A conductive pattern is formed using a reactive polymer comprising pendant tertiary alkyl ester groups, a compound that provides an acid upon exposure to radiation, and a crosslinking agent. A polymeric layer is patternwise exposed to form first exposed regions with a polymer comprising carboxylic acid groups that are contacted with electroless seed metal ions, and then contacted with a halide to form corresponding electroless seed metal halide. Another exposure converts electroless seed metal halide to electroless seed metal nuclei and forms second exposed regions. A reducing agent is used to develop the electroless seed metal nuclei in the second exposed regions, or to develop the electroless seed metal halide in the first exposed regions. Fixing is used to remove any remaining electroless seed metal halide. The electroless seed metal nuclei are then electrolessly plated in various exposed regions. | 05-07-2015 |
20150122778 | ELECTROLESS PLATING METHOD USING NON-REDUCING AGENT - A conductive pattern is formed in a polymeric layer that has (a) a reactive polymer comprising pendant tertiary alkyl ester groups, (b) a compound that provides an acid upon exposure to radiation, and (c) a crosslinking agent. The polymeric layer is patternwise exposed to radiation to provide a polymeric layer comprising non-exposed regions and exposed regions comprising a polymer comprising carboxylic acid groups. The exposed regions are contacted with electroless seed metal ions to form a pattern of electroless seed metal ions. This pattern of electroless seed metal ions can be contacted with a non-reducing reagent that reacts with the electroless seed metal ions to form an electroless seed metal compound that has a pK | 05-07-2015 |
20160066430 | HOT MELT COMPOSITIONS WITH IMPROVED ETCH RESISTANCE - Hot melt compositions include non-aromatic cyclic (alkyl)acrylates and low acid number waxes. Upon application of actinic radiation, the hot melt compositions cure to form resists. They may be stripped from substrates with high alkaline strippers. The hot melt compositions may be used in the manufacture of printed circuit boards and photovoltaic devices. | 03-03-2016 |
20160070165 | REAGENT AND COMPOSITION OF RESIST - Described is a reagent that enhances acid generation of a photoacid generator and a composition containing such reagent. | 03-10-2016 |
20160086829 | SYSTEMS AND METHODS FOR DRYING HIGH ASPECT RATIO STRUCTURES WITHOUT COLLAPSE USING STIMULI-RESPONSIVE SACRIFICIAL BRACING MATERIAL - Systems and methods for drying a substrate including a plurality of high aspect ratio (HAR) structures is performed after at least one of wet etching and/or wet cleaning the substrate using at least one of wet etching fluid and/or wet cleaning fluid, respectively, and without drying the substrate. Fluid between the plurality of HAR structures is displaced using a solvent including a bracing material. After the solvent evaporates, the bracing material precipitates out of solution and at least partially fills the plurality of HAR structures. The plurality of HAR structures are exposed to non-plasma based stimuli to remove the bracing material. | 03-24-2016 |
20160122879 | METHOD FOR PRODUCING METAL-RESIN COMPLEX - Provided is a metal-resin complex in which a metal alloy and a resin composition that are heterogeneous materials are integrated with each other, and more particularly, a method for producing a metal-resin complex capable of improving bonding strength by producing a metal alloy having a more uniform etching surface using an alkaline aqueous solution to which a chelating agent is added and an acid aqueous solution to which the chelating agent and an amic acid are added, and injection-molding the resin composition by using the produced metal alloy. | 05-05-2016 |
20160194300 | REAGENT FOR ENHANCING GENERATION OF CHEMICAL SPECIES | 07-07-2016 |
20160200630 | FABRICATING HIGHLY DURABLE NANOSTRUCTURED COATINGS ON POLYMER SUBSTRATE | 07-14-2016 |