| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 216057000 | GAS PHASE AND NONGASEOUS PHASE ETCHING ON THE SAME SUBSTRATE | 11 |
| 20080217293 | PROCESSING SYSTEM AND METHOD FOR PERFORMING HIGH THROUGHPUT NON-PLASMA PROCESSING - Embodiments of apparatus and methods for performing high throughput non-plasma processing are generally described herein. Other embodiments may be described and claimed. | 09-11-2008 |
| 20080217294 | METHOD AND SYSTEM FOR ETCHING A HAFNIUM CONTAINING MATERIAL - A method of etching a hafnium containing layer includes disposing a substrate having the hafnium containing layer in a plasma processing system, wherein a mask layer defining a pattern therein overlies the hafnium containing layer. A process gas including a HBr gas is introduced to the plasma processing system, and a plasma is formed from the process gas in the plasma processing system. The hafnium containing layer is exposed to the plasma in order to treat the hafnium containing layer. The hafnium containing layer is then wet etched using a dilute HF wet etch process. | 09-11-2008 |
| 20100025367 | HIGH THROUGHPUT CHEMICAL TREATMENT SYSTEM AND METHOD OF OPERATING - A high throughput chemical treatment system for processing a plurality of substrates is described. The chemical treatment system is configured to chemically treat a plurality of substrates in a dry, non-plasma environment. | 02-04-2010 |
| 20110006037 | SURFACE PROCESSING METHOD - In a surface processing method for processing a surface of a member made of silicon carbide (SiC) and having a fragmental layer on a surface thereof, the surface of the member having the fragmental layer is modified into a dense layer to reduce the number of particles generated from the surface of the member when the member is applied to a plasma processing apparatus. Here, the SiC of the surface of the member is recrystallized by heating the fragmental layer. | 01-13-2011 |
| 20110120972 | REPLACEMENT PROCESS FOR FLUORIDE ION CLEANING - Processes for removing a metal oxide product from a crack with an opening in an outer surface of a part, such as a turbine component. The process includes exposing the metal oxide product to a solution effective to remove a first portion of the metal oxide product from surfaces inside the crack. After the metal oxide product is exposed to the solution, the metal oxide product is heated to a temperature and in an atmosphere effective to remove a second portion of the thermal oxide product from the surfaces inside the crack. The cleaning process may be a substitute for fluoride ion cleaning. | 05-26-2011 |
| 20110132872 | METHOD OF FORMING A NOZZLE AND AN INK CHAMBER OF AN INK JET DEVICE BY ETCHING A SINGLE-CRYSTAL SUBSTRATE - A method of forming a nozzle and an ink chamber of an ink jet device, includes forming a nozzle passage by subjecting a substrate to a directional first etch process from one side of the substrate; applying a second etch process from the same side of the substrate for widening an internal part of the nozzle passage, to form a cavity forming at least a portion of the ink chamber adjacent to the nozzle; and controlling the shape of the cavity by providing, on the opposite side of the substrate, an etch accelerating layer buried under an etch stop layer and by allowing the second etch process to proceed into the etch accelerating layer. The following steps precede the first etch process: forming an annular trench in the substrate on the side of the substrate where the nozzle is to be formed; and passivating the walls of the trench so as to become resistant against the second etch process. The material surrounded by the trench is removed in the first etch process. | 06-09-2011 |
| 20120118856 | Method And Materials For Double Patterning - A silsesquioxane resin is applied over the patterned photo-resist and cured at the pattern surface to produce a cured silsesquioxane resin on the pattern surface. The uncured silsesquioxane resin layer is then removed leaving the cured silsesquioxane resin on the pattern surface. The cured silsesquioxane resin on horizontal surfaces is removed to expose the underlying photo-resist. This photo-resist is removed leaving a pattern of cured silsesquioxane. Optionally, the new pattern can be transferred into the underlying layer(s). | 05-17-2012 |
| 20120125889 | CLUSTER BEAM GENERATING APPARATUS, SUBSTRATE PROCESSING APPARATUS, CLUSTER BEAM GENERATING METHOD, AND SUBSTRATE PROCESSING METHOD - A cluster beam generating apparatus that generates a cluster beam includes a mixer that mixes a gas source material and a liquid source material; a nozzle that supplies a cluster beam including clusters originating from the gas source material and the liquid source material that are mixed in the mixer; and a temperature adjusting portion that adjusts a temperature of the nozzle, thereby controlling a ratio of the clusters originating from the gas source material and the clusters originating from the liquid source material in the cluster beam. | 05-24-2012 |
| 20120325776 | APPARATUS FOR PROCESSING SUBSTRATE AND METHOD OF DOING THE SAME - The apparatus for processing a substrate includes a substrate carrier for carrying a substrate, a chemical-applying unit for applying chemical to the substrate, and a gas-applying unit for applying gas atmosphere to the substrate. | 12-27-2012 |
| 20130020284 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD USING PROCESSING SOLUTION - Nozzle arms for holding discharge heads are caused by a pivotal driving part to move between a processing position above a substrate and a standby position outside a processing cup surrounding a substrate. When the nozzle arms having cleaned a substrate is placed at the standby position, a cleaning solution is ejected from a shower nozzle toward the nozzle arms arranged obliquely downward of the shower nozzle. The three nozzle arms are caused to move up and down such that the nozzle arms cut across a jet of a cleaning solution discharged obliquely downward, thereby cleaning the three nozzle arms in order. Then, a nitrogen gas is ejected from a drying gas nozzle and sprayed on the nozzle arms to remove the cleaning solution attached to the nozzle arms, thereby drying the nozzle arms. | 01-24-2013 |
| 20150027982 | Ultra-Fine Textured Digital Lithographic Imaging Plate and Method of Manufacture - A method of forming an imaging blanket for a printing apparatus comprises preparing a support structure (e.g., mold) for receipt of a polymer blanket compound, introducing the polymer blanket compound in liquid state over the support structure, curing the polymer blanket compound to produce an imaging blanket, releasing the imaging blanket from the support structure, and etching a surface of the imaging blanket to form a texture pattern therein, the surface forming an imaging surface of said imaging blanket. An imaging surface providing desirable dampening fluid retention is provided. Wet etch, dry etch or a combination of both may be used. The polymer may be a silicone compound, may include 3 percent by weight granular material. | 01-29-2015 |
