| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 216053000 | Nongaseous phase etching | 83 |
| 20080245769 | Nanoparticles and method of making thereof - A method of making nanoparticles includes reacting a first material powder with a second material vapor to form a surface coating on particles of the first material powder, and selectively removing the first material powder to convert the surface coating to third material nanoparticles. | 10-09-2008 |
| 20080272088 | POLISHING COMPOUND AND POLISHING METHOD - To provide a polishing compound that is capable of minimizing formation of scratches on an object to be polished, such as a resin substrate or a metal wiring, and polishing at a high removal rate. To further provide a polishing method that is capable of minimizing formation of scratches on a resin substrate or a metal wiring, and improving the throughput. | 11-06-2008 |
| 20080308528 | Nanoporous ultrafine alpha-alumina powders and sol-gel process of preparing same - The present invention provides α-alumina powders comprising α-alumina particles of which at least 80% of the α-alumina particles have a particle size of less than 100 nm. The invention also provides slurries, particularly aqueous slurries, which comprise α-alumina powders of the invention. The invention further provides methods of manufacturing α-alumina powders and α-alumina slurries of the invention and methods of polishing using same. | 12-18-2008 |
| 20080314872 | Chemical-Mechanical Polishing Compositions Containing Aspartame And Methods Of Making And Using The Same - The present invention provides an aqueous CMP slurry composition that comprises abrasive particles and Aspartame. The CMP slurry composition according to the invention is selective for polishing silicon dioxide in preference to silicon nitride from a surface of an article by chemical mechanical planarization. Furthermore, as more Aspartame is added to the slurry, the silicon dioxide rate is either not greatly affected or increases and the silicon nitride rate stays extremely low. In addition to offering selectivity of silicon dioxide to silicon nitride polishing, the present invention provides a method of using Aspartame as a polish accelerant in silicon dioxide polishing. | 12-25-2008 |
| 20090001051 | Slurry compositions for polishing metal, methods of polishing a metal object and methods of forming a metal wiring using the same - A slurry composition for polishing metal includes a polymeric polishing accelerating agent, the polymeric polishing accelerating agent including a backbone of hydrocarbon and a side substituent having at least one of a sulfonate ion (SO | 01-01-2009 |
| 20090014415 | COMPOSITIONS AND METHODS FOR RAPIDLY REMOVING OVERFILLED SUBSTRATES - This invention relates to compositions and methods for removing overfilled substrates, preferably at a relatively high removal rates Advantageously, a composition according to the invention can contain an oxidizer, preferably a per-type oxidizer such as a peroxide, periodic acid, and peracetic acid, and may also optionally contain an abrasive. | 01-15-2009 |
| 20090095712 | Flattening method and flattening apparatus - A flattening method, by utilizing the advantages of the CARE method and making up for the disadvantages, can perform removal processing of a surface of a workpiece at a sufficient processing rate and can provide a processed surface having enhanced flatness without leaving damage in the processed surface. A flattening method comprises at least two surface removal steps and at least two cleaning steps, the final surface removal step being a catalyst-referred etching step comprising immersing a workpiece in a processing solution containing at least one of hydrohalic acid, hydrogen peroxide water and ozone water, and bringing a surface of a catalyst platen into contact with or close proximity to a surface to be processed of the workpiece to process the surface, said catalyst platen having in a surface a catalyst selected from the group consisting of platinum, gold, a ceramic solid catalyst, a transition metal, glass, and an acidic or basic solid catalyst. | 04-16-2009 |
| 20090145880 | LIQUID JET-GUIDED ETCHING METHOD FOR REMOVING MATERIAL FROM SOLIDS AND ALSO USE THEREOF - The present invention relates to a method for removing material from solids by liquid jet-guided etching. The method according to the invention is used in particular for cutting, microstructuring, doping of wafers or also the metallisation thereof. | 06-11-2009 |
| 20090152240 | CHEMICAL-MECHANICAL POLISHING COMPOSITION AND METHOD FOR USING THE SAME - The invention provides methods of polishing a noble metal-containing substrate with one of two chemical-mechanical polishing compositions. The first chemical-mechanical polishing composition comprises (a) an abrasive comprising α-alumina, (b) about 0.05 to about 50 mmol/kg of ions of calcium, strontium, barium, or mixtures thereof, and (c) a liquid carrier comprising water. The second chemical-mechanical polishing composition comprises (a) an abrasive selected from the group consisting of α-alumina, γ-alumina, δ-alumina, θ-alumina, diamond, boron carbide, silicon carbide, tungsten carbide, titanium nitride, and mixtures thereof, (b) about 0.05 to about 3.5 mmol/kg of ions of calcium, strontium, barium, magnesium, zinc, or mixtures thereof, and (c) a liquid carrier comprising water. | 06-18-2009 |
| 20090194504 | METHOD FOR PRODUCING ABRASIVE COMPOSITION - The present invention provides a method for producing an abrasive composition, which can control dishing, a method for polishing a substrate using the abrasive composition, and a method for producing a substrate. In the method for producing an abrasive composition, two kinds of preliminary compositions (A) and (B) having different compositions are mixed in different mixing ratios to produce plural kinds of abrasive compositions, wherein a composition containing (a) an abrasive grain, (b) an oxidizing agent, (c) one or more acids selected from the group consisting of amino acids, organic acids and inorganic acids, and (d) a surfactant is used as the preliminary composition (A); and a composition containing (a) an abrasive grain and (b) an oxidizing agent is used as the preliminary composition (B). The preliminary composition (B) may contain the foregoing acid (c) and surfactant (d). In this case, at least one of (a), (b), (c) and (d) in the preliminary composition (A) has a different concentration from that in the preliminary composition (B). | 08-06-2009 |
| 20090261065 | COMPONENTS FOR USE IN A PLASMA CHAMBER HAVING REDUCED PARTICLE GENERATION AND METHOD OF MAKING - Components entirely of ceramic with etched surfaces wherein the etched surface has a surface roughness value or at least about 100 microinches (about 2.54 microns) Ra, and methods of forming such. | 10-22-2009 |
| 20090289033 | Polishing composition containing polyether amine - The inventive chemical-mechanical polishing system comprises a polishing component, a liquid carrier, and a polyether amine. The inventive method comprises chemically-mechanically polishing a substrate with the aforementioned polishing system. | 11-26-2009 |
| 20090314744 | CMP method for metal-containing substrates - An aqueous chemical-mechanical polishing composition for polishing metal containing substrates comprising an abrasive particle consisting essentially of a primary particle modified with an aluminosilicate layer, and wherein the abrasive particle has a zeta potential measured at pH 2.3 of about −5 mV to about −100 mV. The composition can be used to polish the surface of a tungsten containing substrate. | 12-24-2009 |
| 20090321390 | CHEMICAL MECHANICAL POLISHING OF MOISTURE SENSITIVE SURFACES AND COMPOSITIONS THEREOF - The present invention relates to compositions for chemical mechanical polishing (CMP—also referred to as chemical mechanical planarization) for fabrication of an advanced optical, photonic, or microelectronic device, wherein the composition is a microemulsion. | 12-31-2009 |
| 20100096360 | COMPOSITIONS AND METHODS FOR BARRIER LAYER POLISHING - Methods and apparatus are provided for polishing barrier layer materials. In one embodiment, a composition is provided for removing at least a barrier material from a substrate surface, including includes a base composition, a silica abrasive, a solvent, a pH between about 7 and about 10, and one or more components selected from the group of a metal passivating compound, an oxidizer, and an alumina abrasive. The composition may be used to chemical mechanical polishing process a substrate surface having a ruthenium-based barrier and one or more material selected from the group of a polysilicon layer, a dielectric layer, or metal layer. | 04-22-2010 |
| 20100147799 | CHEMICAL MECHANICAL POLISHING METHOD - In an embodiment, a chemical mechanical polishing method for a substrate having a first layer and a stepped portion. A surface of the first layer is positioned above an upper face of the stepped portion. A polishing process for selectively removing the stepped portion is performed on the first layer by using a first slurry composition that has a self-stopping characteristic so that the first layer is changed into a second layer having a substantially flat surface. A second polishing process is performed using a second slurry composition that does not have the self-stopping characteristic, until the upper face of the stepped portion is exposed. | 06-17-2010 |
| 20100187200 | CMP SENSOR AND CONTROL SYSTEM - Chemical-mechanical polishing (CMP) systems comprising apparatus and methods which allow the physical and chemical characteristics of a CMP slurry to be monitored during the polishing process, both on the pad and in the fresh slurry, are provided. The methods and apparatus of the invention also furnish the CMP operator with real-time information about the polishing process, which can provide insight into various chemical and physical mechanisms involved in chemical-mechanical polishing. The data provided by the sensors also make available valuable information about the stability and reproducibility of the particular CMP process being observed. | 07-29-2010 |
| 20100193470 | POLISHING COMPOSITION FOR NICKEL-PHOSPHOROUS MEMORY DISKS - The invention provides a chemical-mechanical polishing composition comprising alpha alumina, fumed alumina, silica, an oxidizing agent that oxidizes nickel-phosphorous, oxalic acid, optionally, tartaric acid, optionally, a nonionic surfactant, optionally, a biocide, and water. The invention also provides a method of chemically-mechanically polishing a substrate comprising contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate. | 08-05-2010 |
| 20100206843 | RESTORING OF STRENGTH AND WEAR RESISTANCE OF A METAL MATRIX COMPOSITE (MMC) - The present invention relates to a method and an arrangement for restoring strength and wear resistant of a metallic matrix ceramic ( | 08-19-2010 |
| 20100243603 | SILICON-METAL COMPOSITE MICROMECHANICAL COMPONENT AND METHOD OF MANUFACTURING THE SAME - The invention relates to a method ( | 09-30-2010 |
| 20100258528 | CHEMICAL MECHANICAL POLISHING OF SILICON CARBIDE COMPRISING SURFACES - Slurry compositions and chemically activated CMP methods for polishing a substrate having a silicon carbide surface using such slurries. In such methods, the silicon carbide surface is contacted with a CMP slurry composition that comprises i) a liquid carrier and ii) a plurality of particles having at least a soft surface portion, wherein the soft surface portion includes a transition metal compound that provides a Mohs hardness ≦6, and optionally iii) an oxidizing agent. The oxidizing agent can include a transition metal. The slurry is moved relative to the silicon carbide comprising surface, wherein at least a portion of eth silicon carbide surface is removed. | 10-14-2010 |
| 20100276392 | CMP SYSTEM UTILIZING HALOGEN ADDUCT - The invention provides a method of polishing a substrate comprising (i) providing a chemical-mechanical polishing system comprising (a) a polishing component selected from an abrasive, a polishing pad, or both an abrasive and a polishing pad, (b) an aqueous carrier, and (c) the halogen adduct resulting from the reaction of (1) an oxidizing agent selected from the group consisting of iodine, bromine, and a combination thereof, and (2) a carbon acid having a pKa of about 3 to about 14, wherein the halogen adduct is present in a concentration of about 0.001 mM or more in the aqueous carrier, (ii) contacting the substrate with the polishing system, and (iii) abrading at least a portion of the surface of the substrate with the polishing system to polish the substrate. | 11-04-2010 |
| 20100294742 | Modifications to Surface Topography of Proximity Head - In an example embodiment, a wet system includes a proximity head and a holder for substrate (e.g., a semiconductor wafer). The proximity head is configured to cause a flow of an aqueous fluid in a meniscus across a surface of the proximity head. The surface of the proximity head interfaces with a surface of a substrate through the flow. The surface of the head is composed of a non-reactive material (e.g., thermoplastic) with modifications as to surface topography that confine, maintain, and/or facilitate the flow. The modifications as to surface topography might be inscribed on the surface with a conical scribe (e.g., with a diamond or SiC tip) or melt printed on the surface using a template. These modifications might produce hemi-wicking or superhydrophobicity. The holder exposes the surface of the substrate to the flow. | 11-25-2010 |
| 20110011833 | METHOD OF MANUFACTURING SUBSTRATE FOR INFORMATION STORAGE MEDIA - A manufacturing method is provided for manufacturing a substrate for information storage media having various properties that are demanded for a next generation of information storage media substrate purposes exemplified by perpendicular magnetic recording systems, etc., and above all, having high fracture toughness and a smooth surface at low cost. The method of manufacturing a substrate for information storage media includes a step of preparing glass material of a plate shape containing SiO | 01-20-2011 |
| 20110192819 | System and method for the manufacture of surgical blades - A method for manufacturing surgical blades from either a crystalline or poly-crystalline material, preferably in the form of a wafer, is disclosed. The method includes preparing the crystalline or poly-crystalline wafers by mounting them and machining trenches into the wafers. The methods for machining the trenches, which form the bevel blade surfaces, include a diamond blade saw, laser system, ultrasonic machine, and a hot forge press. The wafers are then placed in an etchant solution which isotropically etches the wafers in a uniform manner, such that layers of crystalline or poly-crystalline material are removed uniformly, producing single or double bevel blades. Nearly any angle can be machined into the wafer which remains after etching. The resulting radii of the blade edges is 5-500 nm, which is the same caliber as a diamond edged blade, but manufactured at a fraction of the cost. | 08-11-2011 |
| 20110204027 | SLURRY MANUFACTURING METHOD, SLURRY AND POLISHING METHOD AND APPARATUS USING SLURRY - Abrasive particles having a particle diameter of not more than 100 nm are manufactured from raw material. The manufactured abrasive particles are separately dispersed, and are coated with a polymer. Coated abrasive particles having a particle diameter of not more than 100 nm are selected and are mixed with a liquid component of a slurry to manufacture the slurry. A pH adjuster and a viscosity agent are added to the slurry. A glass substrate is polished using the manufactured slurry. Since the abrasive particles having a particle diameter of more than 100 nm or an agglomerate of the cohering abrasive particles does not contact the glass and does not cause big scratches on the glass, the generation of the scratches of 70 nm or more on the glass during polishing are suppressed. | 08-25-2011 |
| 20110204028 | METHOD OF MANUFACTURING A GLASS SUBSTRATE FOR A MAGNETIC DISK - A method for manufacturing a glass substrate for a magnetic disk comprises a surface grinding step of processing a mirror-surface plate glass, having a main surface in the form of a mirror surface, to a required flatness and surface roughness using fixed abrasive particles. The method comprises, before the surface grinding step using the fixed abrasive particles, a surface roughening step of roughening the surface of the mirror-surface plate glass by frosting. | 08-25-2011 |
| 20120024818 | POLISHING AGENT FOR COPPER POLISHING AND POLISHING METHOD USING SAME - A polishing agent for copper polishing, comprising (A) an inorganic acid with divalent or greater valence, (B) an amino acid, (C) a protective film-forming agent, (D) an abrasive, (E) an oxidizing agent and (F) water, wherein the content of the component (A) is at least 0.08 mol/kg, the content of the component (B) is at least 0.20 mol/kg, the content of the component (C) is at least 0.02 mol/kg, and either or both of the following conditions (i) and (ii) are satisfied.
| 02-02-2012 |
| 20120074098 | Process for Treatment of the Surface of a Dental Implant - A processes for treating the surface of a dental implant wherein the dental implant after the machining operation undergoes a sequence of processes that are associated with the removal of all surface contamination, promoting the conditions to form a texturing and an oxide layer with thickness and composition that induces the interaction between the organism and the implant. | 03-29-2012 |
| 20120103937 | METHOD OF MANUFACTURING GLASS SUBSTRATE FOR MAGNETIC STORAGE MEDIUM - A method of manufacturing a glass substrate for a magnetic recording medium, wherein inner and outer circumference end faces of a disk-like glass substrate having a central aperture are at least treated by: a step of grinding, a step of etching, and a step of polishing, wherein the steps are performed in this order. | 05-03-2012 |
| 20120160804 | POLISHING AGENT FOR COPPER POLISHING AND POLISHING METHOD USING SAME - A polishing agent for copper polishing, comprising (A) an inorganic acid with divalent or greater valence, (B) an amino acid, (C) a protective film-forming agent, (D) an abrasive, (E) an oxidizing agent and (F) water, wherein the content of the component (A) is at least 0.08 mol/kg, the content of the component (B) is at least 0.20 mol/kg, the content of the component (C) is at least 0.02 mol/kg, and either or both of the following conditions (i) and (ii) are satisfied.
| 06-28-2012 |
| 20120292288 | METHOD FOR TREATMENT OF A TEMPORARILY BONDED PRODUCT WAFER - A method for treatment of a product wafer temporarily bonded on a carrier wafer with the following steps: grinding and/or backthinning of the product wafer on one flat side facing away from the carrier wafer to a product wafer thickness D of <150 μm, especially <100 μm, preferably <75 μm, even more preferably <50 μm, especially preferably <30 μm, surface treatment of the flat side with means for reducing an especially structural intrinsic stress of the product wafer. | 11-22-2012 |
| 20130020283 | POLISHING SOLUTION FOR COPPER POLISHING, AND POLISHING METHOD USING SAME - The polishing solution for copper polishing of the invention comprises a first organic acid component which is at least one type selected from among an organic acid containing a hydroxyl group, an organic acid salt and an organic acid anhydride, an inorganic acid component which is at least one type selected from among a dibasic or greater inorganic acid and an inorganic acid salt, an amino acid, a protective film-forming agent, an abrasive grain, an oxidizing agent and water, wherein the inorganic acid component content in terms of inorganic acid is 0.15 mass % or greater, the amino acid content is 0.30 mass % or greater, the protective film-forming agent content is 0.10 mass % or greater, based on the entire polishing solution for copper polishing, and the ratio of the first organic acid component content in terms of organic acid with respect to the protective film-forming agent content is at least 1.5. | 01-24-2013 |
| 20130032572 | SLURRY FOR POLISHING PHASE-CHANGE MATERIALS AND METHOD FOR PRODUCING A PHASE-CHANGE DEVICE USING SAME - The present invention relates to slurry for polishing crystalline phase-change materials and to a method for producing a phase-change device using the same. The slurry for polishing crystalline phase-change materials according to one embodiment of the present invention comprises an abrasive, an alkaline abrasive enhancer, an oxidizing agent having a standard reduction potential higher than that of perchlorates, and ultrapure water. In addition, the method for producing a phase-change device according to one embodiment of the present invention comprises the following steps: preparing a substrate; forming a crystalline phase-change material film on the substrate; and removing the phase-change material film through a chemical-mechanical polishing process using slurry for polishing phase-change materials, which comprises an abrasive, an alkaline abrasive enhancer, an oxidizing agent having a standard reduction potential higher than that of perchlorates, and ultrapure water. | 02-07-2013 |
| 20130032573 | METHOD FOR POLISHING SILICON WAFER AND POLISHING LIQUID THEREFOR - Disclosed is a method for polishing a silicon wafer, wherein a surface to be polished of a silicon wafer is rough polished, while supplying a polishing liquid, which is obtained by adding a water-soluble polymer to an aqueous alkaline solution that contains no free abrasive grains, to a polishing cloth. Consequently, the surface to be polished can be polished at high polishing rate and the flatness of the edge portion including roll-off and roll-up can be controlled. | 02-07-2013 |
| 20130037515 | SAPPHIRE POLISHING SLURRY AND SAPPHIRE POLISHING METHOD - Disclosed is a polishing slurry for sapphire polishing that is capable of obtaining polishing speeds and smooth surfaces during the polishing of sapphire substrates that are equivalent to or better than in prior polishing processes even if the number of polishers and polishing hours are reduced. Also disclosed is a sapphire substrate polishing method. The slurry includes alumina abrasives and has a pH adjusted to the range of 10.0 to 14.0, and the sapphire is polished by means of the CMP technique by applying said slurry. The aforementioned alumina abrasives more preferably include at least α-alumina, and the content thereof is more preferably 0.01 to 50 wt %. The mean particle size of the aforementioned alumina abrasives is preferably 0.05 to 10 μm. | 02-14-2013 |
| 20130087530 | THREE-DIMENSIONAL FRACTAL GRADUATED-BRANCHING HIERARCHICAL STRUCTURES AND FABRICATION METHOD THEREOF - A method to fabricate a hierarchical graduated-branched structure that grows in a three-dimensional pattern down to fractal-branching, nano-size level is detailed. The fractal patterning is accomplished on a three-dimensional (i.e., non-planar) surface, by exposing the surface to a properly focused particle beam, which causes the spontaneous growth of graduated branches all over the surface. The structure can be fabricated with a single material and the fractal-patterning is done in a one step process. No addition of material is required for the formation of each branch. The fractal graduated branching structure can then be molded in order to produce replicas. | 04-11-2013 |
| 20130119015 | MANUFACTURING METHOD OF A GLASS SUBSTRATE FOR A MAGNETIC DISK - An object of the invention is to effectively remove particles on the glass substrate surfaces, even in the case wherein abrasive particles having a small particle size is used in the polishing step of the glass substrate and a supersonic treatment is performed at a high frequency at the supersonic cleaning step after the polishing step. In a manufacturing method of a glass substrate for a magnetic disk comprising a polishing step for performing polishing of the glass substrate and a supersonic cleaning step for performing supersonic cleaning of the glass substrate after the polishing step, the polishing step uses abrasive particles having a particle size of 10 nm to 30 nm and a first supersonic cleaning is performed at a frequency of 300 kHz to 1,000 kHz to form secondary particles and then a second supersonic cleaning is performed at a frequency of 30 kHz to 100 kHz in the supersonic cleaning step. | 05-16-2013 |
| 20130126474 | SURFACE IMPROVEMENT ON ELECTRIC DISCHARGE MACHINED TITANIUM ALLOY MINIATURE PARTS FOR IMPLANTABLE MEDICAL DEVICE - The invention describes a process to remove a recast layer and/or burrs from machining processes to provide a surface of a titanium medical device without dissipation of copper or zinc from the surface of the medical device. | 05-23-2013 |
| 20130140273 | SLURRY FOR CHEMICAL MECHANICAL POLISHING OF COBALT - A slurry for chemical mechanical polishing of Co. The slurry comprises components by weight as follows, Inhibitor 0.01-2%, Oxidant 0-5%, Abrasive 0.1-10%, Complexing agent 0.001-10%, and the rest of water. The pH value of the slurries is adjusted to 3-5 by a pH value adjustor. The inhibitor is chosen from one or more kinds of five-membered heterocycle compound containing S and N atoms or containing S or N atom. The oxidant is one or more chosen from H | 06-06-2013 |
| 20130220973 | PROCESS FOR MANUFACTURING GLASS HARD DISC SUBSTRATES - Provided is a method for producing a glass hard disk substrate, including steps of polishing a glass substrate with an acidic polishing liquid; and subjecting the obtained substrate to alkali cleaning. This method can inhibit degradation of surface roughness of the glass substrate in the alkali cleaning step while maintaining a polishing rate in the polishing step, and further can improve cleanliness. | 08-29-2013 |
| 20130248486 | ELECTRON BEAM POLISHING OF ALUMINUM - A highly polished surface on an aluminum substrate is formed using any number of machining processes. During the machining process, intermetallic compounds are typically generated at a top surface area of the aluminum substrate caused by spot heat generated between the tool edge and the cut tip of the aluminum substrate during the cutting process. The intermetallic compounds can leave surface imperfections after conventional mechanical polishing operations that render the surface of the aluminum substrate difficult to obtain a desired high glossiness due to exfoliation of the intermetallic compounds from the top surface. In order to remove the effect of the intermetallic compounds, an electron beam is applied to the surface resulting in Joule heating to melt down a top surface zone. In this way, any tooling traces and intermetallic compounds are eliminated. | 09-26-2013 |
| 20130248487 | SURFACE TREATMENT FOR AN IMPLANT SURFACE - A method of forming an implant to be implanted into living bone is disclosed. The method comprises the act of roughening at least a portion of the implant surface to produce a microscale roughened surface. The method further comprises the act of immersing the microscale roughened surface into a solution including potassium hydroxide to produce a nanoscale roughened surface consisting of a web-like structure superimposed on the microscale roughened surface. The nanoscale roughened surface has a property that promotes osseointegration. | 09-26-2013 |
| 20130292357 | PROCESS OF FABRICATING IMPLANTS HAVING THREE DISTINCT SURFACES - Processes of fabricating different surface topographies, which may include separate macro processing, micro processing, and nano processing steps, in order to produce an interbody spinal implant having at least three distinct surfaces including (1) at least one integration surface having a roughened surface topography including macro features, micro features, and nano features, without sharp teeth that risk damage to bone structures; (2) at least one graft contact surface having a coarse surface topography including micro features and nano features; and (3) at least one soft tissue surface having a substantially smooth surface including nano features. | 11-07-2013 |
| 20130313225 | CMP COMPOSITION CONTAINING ZIRCONIA PARTICLES AND METHOD OF USE - The invention provides a chemical-mechanical polishing composition containing zirconia particles, a modifying agent that adheres to the zirconia particles, an organic acid, and water, as well as a method of using such a polishing composition to polish substrates and a method of using a polishing composition comprising zirconia particles, an organic acid, an oxidizing agent, and water to polishing substrates containing metal and oxide-based dielectric materials. | 11-28-2013 |
| 20130313226 | POLISHING COMPOSITION FOR NICKEL-PHOSPHOROUS-COATED MEMORY DISKS - The invention provides a chemical-mechanical polishing composition containing wet-process silica, an oxidizing agent that oxidizes nickel-phosphorous, a chelating agent, polyvinyl alcohol, and water. The invention also provides a method of chemically-mechanically polishing a substrate, especially a nickel-phosphorous substrate, by contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate. | 11-28-2013 |
| 20140027407 | Monitoring Retaining Ring Thickness And Pressure Control - A chemical mechanical polishing apparatus includes a carrier head including a retaining ring having a plastic portion with a bottom surface to contact a polishing pad, an in-situ monitoring system including a sensor that generates a signal that depends on a thickness of the plastic portion, and a controller configured to receive the signal from the in-situ monitoring system and to adjust at least one polishing parameter in response to the signal to compensate for non-uniformity caused by changes in the thickness of the plastic portion of the retaining ring. | 01-30-2014 |
| 20140034606 | TITANIUM NANO-SCALE ETCHING ON AN IMPLANT SURFACE - A method of forming an implant to be implanted into living bone is disclosed. The method comprises the act of roughening at least a portion of the implant surface to produce a microscale roughened surface. The method further comprises the act of immersing the microscale roughened surface into a solution containing hydrogen peroxide and a basic solution to produce a nanoscale roughened surface consisting of nanopitting superimposed on the microscale roughened surface. The nanoscale roughened surface has a property that promotes osseointegration. | 02-06-2014 |
| 20140054266 | COMPOSITIONS AND METHODS FOR SELECTIVE POLISHING OF PLATINUM AND RUTHENIUM MATERIALS - The present invention provides chemical-mechanical polishing (CMP) methods for polishing a platinum and/or ruthenium containing substrate, and compositions suitable for use in the methods. The polishing compositions used with the methods of the invention, which contain alumina and at least one additive selected from the group consisting of a suppressor, a complexing agent, and an amino compound, allow for platinum and ruthenium to be polished. The methods of the invention provide for tailoring the relative removal rates of platinum, ruthenium, silicon oxide and silicon nitride. | 02-27-2014 |
| 20140069890 | SUBSTRATE POLISHING AND FLUID RECYCLING SYSTEM - Embodiments of the present invention are generally directed to a substrate polishing and slurry recycling system. The system includes an extendable gutter that may be positioned to collect processing slurry from the polishing pad during processing and deliver the consumed slurry to a reclamation tank. The reclaimed slurry may be treated and mixed with fresh slurry for delivery to the polishing pad during subsequent substrate polishing. The extendable gutter may be positioned in a second position during rinsing of the polishing pad so that rinsing fluid passes underneath the gutter and is removed from the system without mixing with the reclaimed slurry. | 03-13-2014 |
| 20140138355 | Recording Measurements by Sensors for a Carrier Head - A pressure control assembly for a carrier head of a polishing apparatus includes a pressure supply line configured to fluidically connect to a chamber of a carrier head, a sensor to responsive to pressure in the chamber and configured to generate a signal representative of the pressure, and a pneumatic control unit configured to receive the signal, to control a pressure applied to the pressure supply line, and to record the signal in a non-transitory storage media of a storage device removably attached to the pneumatic control unit. | 05-22-2014 |
| 20140209566 | CHEMICAL-MECHANICAL POLISHING COMPOSITION CONTAINING ZIRCONIA AND METAL OXIDIZER - The invention provides a chemical-mechanical polishing composition and a method of chemically-mechanically polishing a substrate with the chemical-mechanical polishing composition. The polishing composition comprises (a) abrasive particles, wherein the abrasive particles comprise zirconia, (b) at least one metal ion oxidizer, wherein the at least one metal ion oxidizer comprises metal ions of Co | 07-31-2014 |
| 20140251952 | SURFACE MODIFIED POLISHING PAD - In one embodiment, a polishing pad includes a hydrophilic polymer base having a polishing surface, and a metal oxide coating. The metal oxide coating has nanoparticles of metal oxide disposed on the polishing surface. In another embodiment, a processing station includes a rotatable platen, a polishing head, and a precursor delivery system. The polishing head is configured to retain a substrate against the polishing pad. The precursor delivery system is configured to form an oxide coating on a surface of a polishing pad disposed on the platen. In yet another embodiment, a method for modifying a surface of a polishing pad includes wetting the surface of the polishing pad and delivering a precursor to the wetted surface of the polishing pad surface. The method also includes forming a metal oxide coating having nanoparticles of metal oxide on the surface from the precursor. | 09-11-2014 |
| 20140263176 | ELECTROSTATIC CHUCK REFURBISHMENT - An indication that an electrostatic chuck has a gas leakage rate that exceeds a leakage threshold is received. A determination is made as to whether a first polishing procedure that polishes surface features on a surface of the electrostatic chuck without removing the surface features would reduce a thickness of the surface features to below a thickness threshold. The electrostatic chuck is polished using the first polishing procedure responsive to determining that the first polishing procedure would not reduce the thickness of the surface features to below the thickness threshold. Responsive to determining that the first polishing procedure would reduce the thickness of the surface features to below the thickness threshold, a second polishing procedure that removes the surface features from the surface of the electrostatic chuck is performed. After the second polishing procedure, new surface features are formed on the surface of the electrostatic chuck. | 09-18-2014 |
| 20140326701 | PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING OF BOROPHOSPHOSILICATE GLASS (BPSG) MATERIAL IN THE PRESENCE OF A CMP COMPOSITION COMPRISING ANIONIC PHOSPHATE OR PHOSPHONATE - Provided is a process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of borophosphosilicate glass (BPSG) material in the presence of a chemical mechanical polishing (CMP) composition which comprises: (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one type of anionic phosphate or phosphonate as dispersing agent or charge reversal agent, (C) at least one type of surfactant, and (D) an aqueous medium. | 11-06-2014 |
| 20140360976 | APPARATUS AND METHODS FOR BRUSH AND PAD CONDITIONING - A method and apparatus for conditioning a processing surface of a cylindrical roller disposed in a brush box is described. In one embodiment, a method for processing a substrate is described. The method includes transferring a substrate to a tank, positioning the substrate between two cylindrical rollers disposed in the tank, moving each of the two cylindrical rollers into a first position where a processing surface of each of the cylindrical rollers contacts major surfaces of the substrate, processing the substrate by providing relative motion between at least one of the two cylindrical rollers and the substrate, moving each of the two cylindrical rollers to a second position that is spaced apart from the major surfaces of the substrate, the second position including contacting the processing surface with a conditioning device, and transferring the substrate out of the tank while conditioning the processing surface. | 12-11-2014 |
| 20150060403 | METHODS FOR MANUFACTURING AN ADDITIVELY MANUFACTURED FUEL CONTACTING COMPONENT TO FACILITATE REDUCING COKE FORMATION - A method for manufacturing a fuel contacting component that facilitates reducing coke formation on at least one surface of the fuel contacting component is disclosed herein. The method includes applying a slurry composition including a powder including aluminum to the component surface, wherein the fuel contacting component is formed by an additive manufacturing process. The slurry composition is heat treated to diffuse the aluminum into the component surface. The heat treatment comprises forming a diffusion aluminide coating on the component surface, wherein the diffusion coating comprises a diffusion sublayer formed on the component surface and an additive sublayer formed on the diffusion sublayer. The method further comprises removing the additive sublayer of the diffusion aluminide coating with at least one aqueous solution such that the diffusion sublayer and the component surface are substantially unaffected, wherein the diffusion layer facilitates preventing coke formation on component surface. | 03-05-2015 |
| 20150069016 | POLISHING COMPOSITION - There is provided a polishing composition capable of suppressing formation of a stepped portion caused by etching of a surface of a polishing object including a portion containing a group IV material when the polishing object is polished. The present invention relates to a polishing composition for polishing of a polishing object including a portion that contains a group IV material, and the polishing composition contains an oxidizing agent and an anticorrosive agent. Preferably, the anticorrosive agent includes at least one selected from the group consisting of compounds in which two or more carbonyl groups contained in a molecule are bonded through a carbon atom in the molecule. To be more specific, preferably, the anticorrosive agent includes at least one selected from the group consisting of a 1,3-diketone compound, a 1,4-diketone compound, and a triketone compound. | 03-12-2015 |
| 20150102010 | WET-PROCESS CERIA COMPOSITIONS FOR POLISHING SUBSTRATES, AND METHODS RELATED THERETO - Disclosed are a chemical-mechanical polishing composition and a method of polishing a substrate. The polishing composition comprises wet-process ceria abrasive particles, (e.g., about 120 nm or less), at least one alcohol amine, at least one surfactant having at least one hydrophilic moiety and at least one hydrophobic moiety, the surfactant having a molecular weight of about 1000, and water, wherein the polishing composition has a pH of about 6. The polishing composition can be used, e.g., to polish any suitable substrate, such as a polysilicon wafer used in the semiconductor industry. | 04-16-2015 |
| 20150114928 | Abrasive Particles for Chemical Mechanical Polishing - An abrasive composition for polishing substrates including a plurality of abrasive particles having a poly-dispersed particle size distribution with median particle size, by volume, being about 20 nanometers to about 100 nanometers; a span value, by volume, being greater than or equal to about 15 nanometers, wherein the fraction of particles greater than about 100 nanometers is less than or equal to about 20% by volume of the abrasive particles. | 04-30-2015 |
| 20150114929 | POLISHING COMPOSITION AND METHOD FOR NICKEL-PHOSPHOROUS COATED MEMORY DISKS - The invention provides a polishing composition that contains (a) α-alumina particles that have an average particle size of about 250 nm to about 300 nm, (b) a per-type oxidizing agent, (c) a complexing agent, wherein the complexing agent is an amino acid or an organic acid, and (d) water. The invention also provides a method of polishing a substrate, especially a nickel-phosphorous substrate, with the polishing composition. | 04-30-2015 |
| 20150144593 | APPARATUS AND METHOD FOR POLISHING AND STRENGTHENING SUBSTRATE - An apparatus and method for polishing and strengthening a substrate are disclosed. In one aspect, the apparatus includes a table on which a substrate is placed, a powder supply portion for polishing a surface of the substrate, a substance supply portion, and an injector. The powder supply portion is placed over the table. The substance supply portion is configured to supply a substance onto the polished surface of the substrate. The injector is configured to inject the powder from the powder supply portion onto the surface of the substrate and the substance from the substance supply portion onto the polished surface of the substrate. | 05-28-2015 |
| 20150303070 | Retaining Ring Having Inner Surfaces with Facets - A retaining ring comprises a generally annular body. The body comprises a top surface, a bottom surface, an outer surface connected to the top surface at an outer top perimeter and the bottom surface at an outer bottom perimeter, and an inner surface connected to the top surface at an inner top perimeter and the bottom surface at an inner bottom perimeter. The inner surface comprises seven or more planar facets. Adjacent planar facets are connected at corners. The inner bottom perimeter comprises straight edges of the planar facets connected at the corners. | 10-22-2015 |
| 20150306737 | CHEMICAL MECHANICAL POLISHING PAD - The present disclosure relates to a radiance decomposable CMP pad, and an associated method to refresh the CMP pad. In some embodiments, the CMP pad has a polymer layer and some macro pores disposed therein. A monomer of the polymer layer has a photoactive compound unit. | 10-29-2015 |
| 20150307747 | CMP SLURRY SOLUTION FOR HARDENED FLUID MATERIAL - A method for performing a Chemical Mechanical Polishing (CMP) process includes applying a CMP slurry solution to a surface of a hardened fluid material on a substrate, the solution comprising an additive to change a bonding structure on the surface of the hardened fluid material. The method further includes polishing the surface of the hardened fluid material with a polishing head. | 10-29-2015 |
| 20150315417 | POLISHING COMPOSITION FOR EDGE ROLL-OFF IMPROVEMENT - The invention provides a chemical-mechanical polishing composition including (a) an abrasive comprising wet-process silica particles, (b) a water-soluble polymer, (c) an oxidizing agent, (d) a chelating agent, (e) a pH-adjusting agent, and (f) an aqueous carrier, wherein the pH of the polishing composition is about 1 to about 7. The invention also provides a method of polishing a substrate, especially a nickel-phosphorus substrate, with the polishing composition. | 11-05-2015 |
| 20150368515 | CMP SLURRY COMPOSITIONS AND METHODS FOR ALUMINUM POLISHING - Chemical-mechanical polishing (CMP) compositions and methods are described, which are suitable for polishing an aluminum surface. The compositions comprise alumina abrasive particles coated with an anionic polymer, and suspended in an acidic or neutral pH carrier. In some cases, a polishing aid such as silica, a carboxylic acid, a phosphonic acid compound, or a combination thereof may be added to the CMP compositions. The described CMP compositions and methods improve polishing efficacy and reduce surface imperfections on a polished aluminum surface compared to CMP methods using uncoated alumina abrasive. | 12-24-2015 |
| 20150375361 | CHEMICAL MECHANICAL POLISHING METHOD - A method of chemical mechanical polishing a substrate is provided, comprising: providing a polishing machine having a platen; providing a substrate, wherein the substrate has an exposed silicon oxide surface; providing a chemical mechanical polishing pad, comprising: a polyurethane polishing layer; wherein the polyurethane polishing layer composition exhibits an acid number of ≧0.5 mg (KOH)/g; providing an abrasive slurry, wherein the abrasive slurry comprises water and a ceria abrasive; creating dynamic contact at an interface between the chemical mechanical polishing pad and the substrate; and, dispensing the abrasive slurry onto the polishing surface of the polyurethane polishing layer of the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate; and, polishing the substrate. | 12-31-2015 |
| 20150376458 | COLLOIDAL SILICA CHEMICAL-MECHANICAL POLISHING COMPOSITION - A chemical-mechanical polishing composition includes colloidal silica abrasive particles dispersed in a liquid carrier having a pH in a range from about 1.5 to about 7. The colloidal silica abrasive particles include an aminosilane compound or a phosphonium silane compound incorporated therein. The composition may be used to polish a substrate including a silicon oxygen material such as TEOS. | 12-31-2015 |
| 20150376459 | COLLOIDAL SILICA CHEMICAL-MECHANICAL POLISHING COMPOSITION - A chemical-mechanical polishing composition includes colloidal silica abrasive particles dispersed in a liquid carrier. The colloidal silica abrasive particles include a nitrogen-containing or phosphorus-containing compound incorporated therein such that the particles have a positive charge. The composition may be used to polish a substrate including a silicon oxygen material such as TEOS. | 12-31-2015 |
| 20150376461 | COLLOIDAL SILICA CHEMICAL-MECHANICAL POLISHING CONCENTRATE - A chemical-mechanical polishing concentrate includes at least 10 weight percent of a colloidal silica abrasive particle dispersed in a liquid carrier having a pH in a range from about 1.5 to about 7. The colloidal silica abrasive includes an aminosilane compound or a phosphonium silane compound incorporated therein. The concentrate may be diluted with at least 3 parts water per one part concentrate prior to use. | 12-31-2015 |
| 20160032461 | CHEMICAL MECHANICAL POLISHING OF ALUMINA - A CMP method uses a slurry including a first metal oxide or semiconductor oxide particles (first oxide particles) in water. At least one particle feature is selected from (i) first oxide particles having a polydispersity >30%, (ii) a coating on first oxide particles including Group I or Group II ions, transition metal oxide, or organic material, (iii) first oxide particles mixed with fumed oxide particles, (iv) first oxide particles with average primary size >50 nm mixed with fumed oxide particles having average primary size <25 nm, and (v) first oxide particles with a per surface area per unit mass <100 m | 02-04-2016 |
| 20160059377 | CONFIGURABLE PRESSURE DESIGN FOR MULTIZONE CHEMICAL MECHANICAL PLANARIZATION POLISHING HEAD - A polishing head for chemical mechanical planarization is provided. The polishing head includes a housing and a flexible membrane secured to the housing. At least a first, second, and third pressurizable chamber are disposed in the housing and each chamber contacts the flexible membrane. A first pressure delivery channel couples to the first chamber. A second pressure delivery channel couples to the third chamber. A first pressure feed line couples the first pressure delivery channel to the second chamber. A second pressure feed line couples the second pressure delivery channel to the second chamber. A first manually movable plug interfaces with the first pressure feed line to allow or block pressure from the first pressure delivery channel to the second chamber. A second manually movable plug interfaces with the second pressure feed line to allow or block pressure from the first pressure delivery channel to the second chamber. | 03-03-2016 |
| 20160060488 | POLISHING OF HARD SUBSTRATES WITH SOFT-CORE COMPOSITE PARTICLES - A chemical mechanical polishing (CMP) includes providing a slurry including composite particles dispersed in a water-based carrier that comprise a plurality of hard particles on an outer surface of a soft-core particle. The hard particles have a Mohs hardness at least 1 greater than a Mohs hardness of the soft core particle and/or a Vickers hardness at least 500 Kg/mm | 03-03-2016 |
| 20160090513 | Chemical Mechanical Planarization Slurry Composition Comprising Composite Particles, Process for Removing Material Using Said Composition, CMP Polishing Pad and Process for Preparing Said Composition - CMP processes, tools and slurries utilize composite particles that include core particles having organosilica particles disposed about the core particles. Using these processes, tools and slurries can enhance removal rates, reduce defectivity and increase cleanability with respect to comparable systems and substrates. | 03-31-2016 |
| 20160107289 | CORROSION INHIBITORS AND RELATED COMPOSITIONS AND METHODS - The invention provides methods of inhibiting corrosion of a substrate containing metal. The substrate can be in any suitable form. In some embodiments, the metal is cobalt. The methods can be used with semiconductor wafers in some embodiments. The invention also provides chemical-mechanical polishing compositions and methods of polishing a substrate. A corrosion inhibitor can be used in the methods and compositions disclosed herein. The inhibitor comprises an amphoteric surfactant, a sulfonate, a phosphonate, a carboxylate, an amino acid derivative, a phosphate ester, an isethionate, a sulfate, a sulfosuccinate, a sulfocinnimate, or any combination thereof. | 04-21-2016 |
| 20160108286 | SLURRY FOR CHEMICAL MECHANICAL POLISHING OF COBALT - The invention provides a chemical-mechanical polishing composition including (a) an abrasive comprising alumina particles, silica particles, or a combination thereof, (b) a rate accelerator comprising a phosphonic acid, an N-heterocyclic compound, or a combination thereof, (c) a corrosion inhibitor comprising an amphoteric surfactant, a sulfonate, a phosphonate, a carboxylate, a fatty acid amino acid, an amine, an amide, or a combination thereof, (d) an oxidizing agent, and (e) an aqueous carrier. The invention also provides a method of polishing a substrate, especially a substrate comprising a cobalt layer, with the polishing composition. | 04-21-2016 |
| 20160114459 | Polishing Pad Cleaning Systems Employing Fluid Outlets Oriented To Direct Fluid Under Spray Bodies And Towards Inlet Ports, And Related Methods - Polishing pad cleaning systems employing fluid outlets orientated to direct fluid under spray bodies and towards inlet ports, and related methods are disclosed. A polishing pad in combination with slurry contacts a substrate to planarize a surface of the substrate and remove substrate defects while creating debris. A spray system removes the debris from the polishing pad to prevent substrate damage and improve efficiency. By directing fluid under a spray body to the polishing pad and towards an inlet port, the debris may be entrained in the fluid and directed to an inner plenum of the spray body. The fluid-entrained debris is subsequently removed from the inner plenum through an outlet port. In this manner, the debris removal may reduce substrate defects, improve facility cleanliness, and improve pad efficiency. | 04-28-2016 |
| 20160130475 | POLISHING LIQUID AND METHOD OF POLISHING SiC SUBSTRATE - Provided is a polishing liquid which contains a permanganate, a pH adjustor, and water and which is used for polishing of a SiC substrate. Also provided is a method of polishing a SiC substrate, the method including: a first polishing step of polishing the SiC substrate by use of a first polishing liquid containing a permanganate, inorganic salts having an oxidizing ability, and water; and a second polishing step of performing finishing polishing of the SiC substrate by use of a second polishing liquid containing a permanganate, a pH adjustor, and water after the first polishing step. | 05-12-2016 |
| 20160153094 | Salt Based Etching of Metals and Alloys for Fabricating Superhydrophobic and Superoleophobic Surfaces | 06-02-2016 |
| 20160167195 | SYSTEM AND PROCESS FOR IN SITU BYPRODUCT REMOVAL AND PLATEN COOLING DURING CMP | 06-16-2016 |
| 20160168421 | CMP COMPOSITIONS EXHIBITING REDUCED DISHING IN STI WAFER POLISHING | 06-16-2016 |
| 20160176014 | SYSTEMS, APPARATUS, AND METHODS FOR AN IMPROVED POLISHING HEAD GIMBAL USING A SPHERICAL BALL BEARING | 06-23-2016 |
