Class / Patent application number | Description | Number of patent applications / Date published |
216049000 | Mask resist contains organic compound | 60 |
20080283496 | METHOD FOR ETCHING AND FOR FORMING A CONTACT HOLE USING THEREOF - To provide a method for forming an etching structure without difficulty to control the manufacturing conditions, and with a minute dimension exceeding the limit of exposure, while suppressing increase of manufacturing processes and increasing of manufacturing cost. | 11-20-2008 |
20080290067 | MICROSTRUCTURE, PATTERN MEDIUM AND PROCESS FOR PRODUCING SAME - It is an object to provide a microstructure having cylindrical microdomains oriented in the film thickness direction and arranged in a regular pattern, for which a microphase separation phenomenon of a block copolymer is utilized. The process for producing the microstructure includes 2 steps; the first step for arranging, on a substrate ( | 11-27-2008 |
20090045166 | METHOD OF ENHANCING BIOCOMPATIBILITY OF ELASTOMERIC MATERIALS BY MICROTEXTURING USING MICRODROPLET PATTERNING - A simple method to introduce microstructures to the surface of elastomeric materials such as silicone elastomers is described. The patterns are generated by forming microdroplets of a protective polymer onto a silicone elastomer film, hardening the polymer, and then removing the uncoated material by chemical etching. Cell attachment study results show that the treated material has a significantly enhanced biocompatibility compared to a non-treated control. | 02-19-2009 |
20090120905 | Sacrificial Compositions And Methods Of Fabricating A Structure Using Sacrificial Compositions - Compositions, methods of use thereof, and methods of decomposition thereof, are provided. One exemplary composition, among others, includes a polymer and a catalytic amount of a negative tone photoinitiator. | 05-14-2009 |
20090134119 | FILM-FORMING MATERIAL AND METHOD OF FORMING PATTERN - A film-forming material that is capable of forming, at a low temperature, a film having a high degree of etching resistance and a high etching selectivity ratio relative to an organic film, as well as a method of forming a pattern that uses the film-forming material. The film-forming material includes a metal compound (W) capable of generating a hydroxyl group upon hydrolysis, and a solvent (S) in which the metal compound is dissolved, wherein the solvent (S) includes a solvent (S1) with a boiling point of at least 155° C. that contains no functional groups that react with the metal compound (W). The method of forming a pattern includes the steps of: coating a pattern, which has been formed on top of an organic film of a laminate that includes a substrate and the organic film, using the above film-forming material, and then conducting etching of the organic film using the pattern as a mask. | 05-28-2009 |
20090206054 | MATERIALS AND METHODS FOR CREATING IMAGING LAYERS - The present invention provides patterned features of dimensions of less than 50 nm on a substrate. According to various embodiments, the features may be “Manhattan” style structures, have high aspect ratios, and/or have atomically smooth surfaces. The patterned features are made from polymer brushes grafted to a substrate. In some embodiments, the dimensions of the features may be determined by adjusting the grafting density and/or the molecular weight of the brushes. Once the brushes are patterned, the features can be shaped and reshaped with thermal or solvent treatments to achieve the desired profiles. The chemical nature of the polymer brush is thus independent of the patterning process, which allows for optimization of the polymer brush used for specific applications. Applications include masks for pattern transfer techniques such as reactive ion etching. | 08-20-2009 |
20090236310 | Adjustable solubility in sacrificial layers for microfabrication - The present invention provides fabrication methods using sacrificial materials comprising polymers. In some embodiments, the polymer may be treated to alter its solubility with respect to at least one solvent (e.g., aqueous solution) used in the fabrication process. The preparation of the sacrificial materials is rapid and simple, and dissolution of the sacrificial material can be carried out in mild environments. Sacrificial materials of the present invention may be useful for surface micromachining, bulk micromachining, and other microfabrication processes in which a sacrificial layer is employed for producing a selected and corresponding physical structure. | 09-24-2009 |
20090236311 | Method and Apparatus for Structuring Components Made of a Material Composed of Silicon Oxide - A method and an apparatus for forming a structure on a component made of a material composed of silicon oxide, especially of silicate glass, glass ceramic or quartz, wherein in accordance with the process at least a first surface of the component a partial removal of the material by plasma etching takes place and during the plasma etching at least at the surface to be etched a substrate temperature is established which is substantially greater than 90° C. but less than the softening temperature of the material. The apparatus is equipped for this purpose with a heater for generating the substrate temperature. | 09-24-2009 |
20090242512 | DEEP REACTIVE ION ETCHING - In a method of performing an anisotropic etch on a substrate in an inductively coupled plasma etch chamber, at least three cycles of a procedure consisting essentially of the four following steps are performed:
| 10-01-2009 |
20100147798 | SURFACE TEXTURIZATION METHOD - A surface texturization method is provided. First, a polymer film is formed on a substrate. Thereafter, a heating treatment is performed on the substrate. The heating treatment results in a textured polymer film having island-shaped and/or microcrack-shaped patterns. Afterwards, an etching process is performed using the textured polymer film as a mask, so as to remove a portion of the substrate to form a textured structure on the surface of the substrate. | 06-17-2010 |
20100193469 | METHOD FOR MANUFACTURING MICRO/NANO THREE-DIMENSIONAL STRUCTURE - A method for manufacturing a micro/nano three-dimensional structure including the following steps is described. A mold is provided, and a pattern structure including a plurality of convex portions and concave portions is set in the mold. A transfer material layer including a first portion on the convex portions and a second portion on the concave portions is formed. A flexible substrate is disposed on the mold and contacts with the first portion of the transfer material layer. A heating step is performed to partially heat the flexible substrate through the first portion. A pressure is applied on the flexible substrate to adhere or press the first portion to the flexible substrate. The mold is removed. An etching step is performed on the flexible substrate by using the first portion of the transfer material layer as a mask to form a micro/nano three-dimensional structure in the flexible substrate. | 08-05-2010 |
20110210096 | PRINTED MASKING PROCESS - A method of chemically milling a workpiece includes depositing a masking material on portions of the workpiece according to a predefined masking pattern such that other portions of the workpiece that are desired to be milled are unmasked. Material from the unmasked desired milling areas of the workpiece is chemically removed. | 09-01-2011 |
20110297646 | Methods Of Forming Patterns On Substrates - A method of forming a pattern on a substrate includes forming spaced features over a substrate. A polymer is adsorbed to outer lateral surfaces of the spaced features. Either material of the spaced features is removed selectively relative to the adsorbed polymer or material of the adsorbed polymer is removed selectively relative to the spaced features to form a pattern on the substrate. In one embodiment, the polymer is of known chain length and has opposing longitudinal ends. One of the longitudinal ends of the polymer adsorbs to the outer lateral surfaces whereby the adsorbed polymer projects lengthwise from the outer lateral surfaces, with said chain length defining a substantially uniform lateral thickness of the adsorbed polymer on the spaced features. Additional embodiments are contemplated. | 12-08-2011 |
20120181251 | PATTERN FORMING METHOD AND RESIST UNDERLAYER FILM-FORMING COMPOSITION - A pattern-forming method includes forming a resist underlayer film on a substrate using a resist underlayer film-forming composition. The resist underlayer film-forming composition includes a base component, and a crosslinking agent. The crosslinking agent has a partial structure represented by a following general formula (i). X represents an oxygen atom, a sulfur atom, or —NR—. R represents a hydrogen atom, an alkyl group having 1 to 9 carbon atoms, or an aryl group having 6 to 30 carbon atoms. n | 07-19-2012 |
20120223051 | Sub-10 NM Line Features via Rapid Graphoepitaxial Self-Assembly of Amphiphilic Monolayers - Methods for fabricating sublithographic, nanoscale microchannels utilizing an aqueous emulsion of an amphiphilic agent and a water-soluble, hydrogel-forming polymer, and films and devices formed from these methods are provided. | 09-06-2012 |
20120223052 | Methods of Improving Long Range Order in Self-Assembly of Block Copolymer Films with Ionic Liquids - Methods for fabricating arrays of nanoscaled alternating lamellae or cylinders in a polymer matrix having improved long range order utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. | 09-06-2012 |
20120228262 | PATTERN FORMING METHOD - A pattern forming method includes forming a coating film containing a hydrophilic first homopolymer having a first bonding group and a hydrophobic second homopolymer having a second bonding group capable of bonding with the first bonding group, forming a bond between the first and second bonding group to produce a block copolymer of the first and second homopolymners, and heating the coating film to microphase-separating the copolymer into a hydrophilic domain and a hydrophobic domain. The hydrophilic and hydrophobic domains are arranged alternately. The bond is broken, then selectively dissolving-removing either domain by a solvent to provide a polymer pattern of a remainder domain. | 09-13-2012 |
20120273460 | RANDOM COPOLYMER FOR FORMING NEUTRAL SURFACE AND METHODS OF MANUFACTURING AND USING THE SAME - A random copolymer having a structure represented by the following Formula 1: | 11-01-2012 |
20120285929 | PATTERN-FORMING METHOD, AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM - Providing a method for forming a pattern capable of forming a resist underlayer film that can be easily removed using an alkali liquid while maintaining etching resistance is objected to. Provided by the present invention is a method for forming a pattern, the method including: (1) forming a resist underlayer film on a substrate using a composition for forming a resist underlayer film containing a compound having an alkali-cleavable functional group; (2) forming a resist pattern on the resist underlayer film; (3) forming a pattern on the substrate by dry etching of the resist underlayer film and the substrate, using the resist pattern as a mask; and (4) removing the resist underlayer film with an alkali liquid. | 11-15-2012 |
20130020282 | PRINTED MASKING PROCESS - A method of chemically milling a workpiece includes the step of depositing a masking material on portions of a workpiece according to a predefined masking pattern such that other portions of the workpiece that are desired to be milled are unmasked. The masking material is deposited using a masking printer that moves in three dimensions to deposit the masking material onto the workpiece. The method also includes the step of chemically removing material from unmasked desired milling areas of the workpiece. | 01-24-2013 |
20130048604 | PHOTORESIST COMPOSITION AND METHOD OF FORMING A FINE PATTERN USING THE SAME - A photoresist composition includes from about 20% to about 50% by weight of a polymer, from about 0.5% to about 1.5% by weight of a photo-acid generator, from about 0.01% to about 0.5% by weight of a photo absorber and the remainder includes an organic solvent. Also provided is a method of forming a fine pattern including forming a thin film on a substrate; forming a photoresist pattern by using a photoresist composition that includes from about 20% to about 50% by weight of a polymer, from about 0.5% to about 1.5% by weight of a photo-acid generator, from about 0.01% to about 0.5% by weight of a photo absorber and a remainder comprising an organic solvent; and patterning the thin film by using the photoresist pattern as an etch-stop layer to form a fine pattern. | 02-28-2013 |
20130075364 | PATTERNING PROCESS AND MATERIALS FOR LITHOGRAPHY - Methods for forming a pattern in a lithography process for semiconductor wafer manufacturing are provided. In an example, a method includes forming a photoresist layer over a material layer; performing a first exposure process on the photoresist layer, thereby forming an exposed photoresist layer having soluble portions and unsoluble portions; treating the exposed photoresist layer, wherein the treating includes one of performing a second exposure process on the exposed photoresist layer and forming an adsorbing chemical layer over the exposed photoresist layer; and developing the exposed and treated photoresist layer to remove the soluble portions of the photoresist layer, wherein the unsoluble portions of the photoresist layer form a photoresist pattern that exposes portions of the material layer. | 03-28-2013 |
20130098869 | Method for Forming Minute Pattern and Method for Forming Minute Pattern Mask - A method for forming a minute pattern mask includes forming an etching target layer on a substrate. A convex pattern including a plurality of convex parts is formed on the etching target layer. A resin composition is coated on the convex pattern to form a resin layer including a first region neighboring the convex part and a second region positioned between the neighboring convex parts. The resin layer is ashed or etched to form the plurality of first resin patterns. The plurality of first resin patterns is processed to form a minute pattern mask including a plurality of second resin patterns. The etching target layer is etched using the plurality of second resin patterns as an etch mask to form a minute pattern. | 04-25-2013 |
20130098870 | METHOD FOR FORMING PATTERN - A method for forming a pattern includes providing a composition to form a resist underlayer film on a surface of a substrate to be processed. The composition contains a calixarene based compound having a group represented by a following formula (i) bound to at least a part of an aromatic ring or at least a part of a heteroaromatic ring of the calixarene based compound. The resist underlayer film on the surface of the substrate is treated with heat or an acid. A resist pattern is formed on a surface of the resist underlayer film. The resist underlayer film and the substrate are etched using the resist pattern as a mask to form the pattern on the substrate. The dry-etched resist underlayer film is removed from the substrate with a basic solution. | 04-25-2013 |
20130126473 | METHOD USING BLOCK COPOLYMERS FOR MAKING A MASTER DISK WITH RADIAL BINARY ENCODED NONDATA MARKS FOR NANOIMPRINTING PATTERNED MAGNETIC RECORDING DISKS - A method using directed self-assembly of BCPs enables the making of a master disk for nanoimprinting magnetic recording disks that have patterned data islands and patterned binary encoded nondata marks. The method uses guided self-assembly of a BCP to form patterns of sets of radial lines and circumferential gaps of one of the BCP components, which can be used as an etch mask to make the master disk. The sets of radial lines and circumferential gaps can be patterned so as to encode binary numbers. The pattern is replicated as binary encoded nondata marks into the nanoimprinted disks, with the marks functioning as binary numbers for data sector numbers and/or servo sector numbers. If the disks also use a chevron servo pattern, the binary numbers can function to identify groups of tracks associated with the chevron servo pattern. | 05-23-2013 |
20130168351 | SLIDE MEMBER AND METHOD FOR THE PRODUCTION THEREOF - A slide member includes a substrate that is made of a metal material and has a sliding surface with a plurality of microdimples formed therein. Each of the microdimple has a circular opening, the microdimples are arranged in regular intervals in a hexagonal close-packed configuration, and the area ratio of the openings of all the microdimples to the entire sliding surface is in the range of 50 to 80%. | 07-04-2013 |
20130213931 | METHOD FOR FORMING A PATTERN, METHOD FOR PRODUCING A SUBSTRATE, AND METHOD FOR PRODUCING A MOLD - A method for forming a pattern is provided. A photoresist layer constituted by organic dye, which is capable of deformation in a heat mode, is formed on a substrate. A laser beam is irradiated onto the photoresist layer, to form hole portions in the photoresist layer at portions onto which the laser beam is irradiated. The photoresist layer is etched within a vacuum using a predetermined gas, following the step in which the hole portions are formed in the photoresist layer. | 08-22-2013 |
20130213932 | PATTERN FORMATION METHOD AND METAL STRUCTURE FORMATION METHOD - A resist layer made of oxonol-based dye, and the OD value of which is greater than or equal to 1.0 and less than or equal to 1.6 with respect to light having the wavelength of 580 nm, is formed on a substrate. The formed resist layer is scanned with a laser beam at a scan speed of higher than or equal to 3 m/s and lower than or equal to 10 m/s. A ring-shaped pattern is formed by developing the resist layer scanned with the laser beam using a developer containing alcohol as a main component. | 08-22-2013 |
20130240481 | BLOCK COPOLYMER-CONTAINING COMPOSITION AND METHOD OF REDUCING PATTERN - The present invention relates to a composition including: a component (A) being a block copolymer including a block P | 09-19-2013 |
20130256264 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, AND PATTERN-FORMING METHOD - A composition for forming a resist underlayer film includes a polysiloxane, and a solvent composition. The solvent composition includes an organic solvent which includes a compound represented by the following formula (1) or a carbonate compound and which has a standard boiling point of no less than 150.0° C. R | 10-03-2013 |
20130256265 | Sequential Infiltration Synthesis for Enhancing Multiple-Patterning Lithography - Simplified methods of multiple-patterning photolithography using sequential infiltration synthesis to modify the photoresist such that it withstands plasma etching better than unmodified resist and replaces one or more hard masks and/or a freezing step in MPL processes including litho-etch-litho-etch photolithography or litho-freeze-litho-etch photolithography. | 10-03-2013 |
20130264307 | METHOD FOR MAKING STRIP SHAPED GRAPHENE LAYER - A method for making a strip shaped graphene layer includes the steps of: first, a graphene film is located on a surface of a substrate is provided. Second, a drawn carbon nanotube film composite is disposed on the graphene film. The drawn carbon nanotube film composite includes a polymer material and a drawn carbon nanotube film structure disposed in the polymer material. The drawn carbon nanotube film structure includes a plurality of carbon nanotube segments and a plurality of strip-shaped gaps between the adjacent carbon nanotube segments. Third, the polymer material is partly removed to expose the plurality of carbon nanotube segments. Forth, the plurality of carbon nanotube segments and the graphene film covered by the plurality of carbon nanotube segments is etched. Fifth, the remained polymer material is removed to obtain the strip shaped graphene layer. | 10-10-2013 |
20130270226 | Methods Using Block Co-Polymer Self-Assembly for Sub-Lithographic Patterning - Block copolymers can be self-assembled and used in methods as described herein for sub-lithographic patterning, for example. The block copolymers can be diblock copolymers, triblock copolymers, multiblock copolymers, or combinations thereof. Such methods can be useful for making devices that include, for example, sub-lithographic conductive lines. | 10-17-2013 |
20140048512 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND PATTERN-FORMING METHOD - A composition for forming a resist underlayer film includes a polymer having a repeating unit represented by a following formula (1), and a solvent. R | 02-20-2014 |
20140061154 | METHODS OF FORMING A PATTERN - A method includes forming a hydrophilic guide layer, a DBARC layer and a photoresist film. A portion of the photoresist film and DBARC layer is exposed to form exposed and unexposed portions. The unexposed photoresist film is removed to form a photoresist pattern including the exposed photoresist film portion. A neutral layer is formed on the photoresist pattern. The photoresist pattern and the DBARC layer of the exposed portion are removed to form first opening portions exposing the guide layer. A block copolymer layer includes a block copolymer having first and second polymer blocks coated on the neutral layer while filling the first opening portions. The block copolymer layer is microphase separated to form a pattern layer including first and second patterns. A pattern including one polymer block is removed to form a pattern mask. The object layer is etched to form a pattern including second opening portions. | 03-06-2014 |
20140131312 | Lithography Process Using Directed Self Assembly - A method includes forming a patterned hard mask layer, with a trench formed in the patterned hard mask layer. A Bulk Co-Polymer (BCP) coating is dispensed in the trench, wherein the BCP coating includes Poly-Styrele (PS) and Poly Methyl Metha Crylate (PMMA). An annealing is performed on the BCP coating to form a plurality of PS strips and a plurality of PMMA strips allocated in an alternating layout. The PMMA strips are selectively etched, with the PS strips left in the trench. | 05-15-2014 |
20140131313 | SIMULATION METHOD, SIMULATION PROGRAM, RECORDING MEDIUM HAVING THE SIMULATION PROGRAM STORED THEREIN, METHOD FOR PRODUCING DROPLET ARRANGEMENT PATTERNS UTILIZING THE SIMULATION METHOD, NANOIMPRINTING METHOD, METHOD FOR PRODUCING PATTERNED SUBSTRATES, AND INK JET APPARATUS - A simulation method predicts wet spreading and unions of a plurality of droplets arranged on a patterned surface defined by a fine pattern of protrusions and recesses, the patterned surface causing anisotropy to occur in the wet spreading of the droplets. The influence imparted by the pattern of protrusions and recesses that defines the patterned surface, which is the target of analysis, on the wet spreading of the droplets is treated as wetting properties of an analysis surface, and the wet spreading and unions of the plurality of droplets on the analysis surface are analyzed by gas liquid two phase flow analysis that incorporates the wetting property parameters that represents the wetting properties. | 05-15-2014 |
20140183162 | PHOTORESIST COMPOSITION AND METHOD FOR FORMING A METAL PATTERN - A method of forming a metal pattern is disclosed. In the method, a metal layer is formed on a base substrate. A photoresist composition is coated on the metal layer to form a coating layer. The photoresist composition includes a binder resin, a photo-sensitizer and a mixed solvent including a first solvent, a second solvent having a higher volatility than the first solvent, and a third solvent having a higher volatility than the second solvent. The coating layer is exposed to light. The coating layer is partially removed to form a photoresist pattern. The metal layer is patterned by using the photoresist pattern as a mask. | 07-03-2014 |
20140197133 | COMPOSITIONS FOR CONTROLLED ASSEMBLY AND IMPROVED ORDERING OF SILICON-CONTAINING BLOCK COPOLYMERS - The invention provides compositions and methods for inducing and enhancing order and nanostructures in organosilicon block copolymers compositions by including certain organic additives in such compositions that include one or more moieties comprising a hydrogen bond acceptor or a hydrogen bond donor. Such block copolymer compositions may be used, for example, as a mask for lithographic patterning as is used, for example, during various stages of semiconductor device fabrication. | 07-17-2014 |
20140231388 | GUIDE PATTERN DATA CORRECTING METHOD, PATTERN FORMING METHOD, AND COMPUTER READABLE RECORD MEDIUM - According to one embodiment, a guide pattern data correcting method is for correcting guide pattern data of a physical guide for formation of a polymer material to be microphase-separated. The physical guide has a plurality of concave portions in the guide pattern data, and at least two concave portions out of the plurality of concave portions are connected to each other. The guide pattern data is subjected to correction by shifting or rotation of at least either of the two connected concave portions. | 08-21-2014 |
20140263175 | CROSSLINKED RANDOM COPOLYMER FILMS FOR BLOCK COPOLYMER DOMAIN ORIENTATION - Surface-modifying layers, including neutral layers for vertical domain-forming block copolymers of styrene and methyl methacrylate are provided. Also provided are self-assembled block copolymer structures incorporating the surface modifying layers, methods of fabricating such structures and methods of using the structures in BCP lithography applications. The surface-modifying layers comprise a crosslinked copolymer film, wherein the crosslinked copolymers are random copolymers polymerized from styrene monomers and/or (meth)acrylate monomers and crosslinkable epoxy group-functionalized monomers. The crosslinked copolymer films are characterized by a high content of the crosslinkable epoxy group-functionalized monomer. | 09-18-2014 |
20140299575 | SELF-ASSEMBLABLE POLYMER AND METHOD FOR USE IN LITHOGRAPHY - A BCP having first block of first monomer and second block of second monomer, adapted to undergo a transition from disordered state to ordered state at a temperature less than T | 10-09-2014 |
20140346141 | SELF-ASSEMBLABLE POLYMER AND METHODS FOR USE IN LITHOGRAPHY - A method of forming a self-assembled block polymer layer, oriented to form an ordered array of alternating domains, is disclosed. The method involves providing a layer of the self-assemblable block copolymer on the substrate and depositing a first surfactant onto the external surface of the layer prior to inducing self-assembly of the layer to form the ordered array of domains. The first surfactant has a hydrophobic tail and a hydrophilic head group and acts to reduce the interfacial energy at the external surface of the block copolymer layer in order to promote formation of assembly of the block copolymer polymer into an ordered array having the alternating domains. | 11-27-2014 |
20140360975 | POLY(CYCLOHEXYLETHYLENE)-POLYACRYLATE BLOCK COPOLYMERS, METHODS OF MANUFACTURE THEREOF AND ARTICLES COMPRISING THE SAME - Disclosed herein is a block copolymer comprising a first block derived from a cyclo-alkyl vinyl monomer, a hydrogenated vinyl aromatic polymer or a hydrogenated vinyl pyridine polymers; and a second block derived from an acrylate monomer. Disclosed herein too is a method comprising reacting a first block derived from a cyclo-alkyl vinyl monomer, a hydrogenated vinyl aromatic polymer or a hydrogenated vinyl pyridine polymers with an initiator to form a macroinitiator; and polymerizing a second block onto the first block to form a block copolymer; where the second block is derived by polymerizing an acrylate monomer; and where the block copolymer has a chi parameter of greater than or equal to about 0.05, when measured at a temperature of 200° C. to 210° C.; where the chi parameter is a measure of interactions between the first block and the second block of the copolymer. | 12-11-2014 |
20150034594 | METHODS OF PROVIDING PATTERNED TEMPLATES FOR SELF-ASSEMBLABLE BLOCK COPOLYMERS FOR USE IN DEVICE LITHOGRAPHY - A method is disclosed to form a patterned template on a substrate, to direct orientation of a self-assemblable block copolymer. The method involves providing a resist layer of a positive tone resist on the substrate and overexposing the resist with actinic (e.g. UV) radiation by photolithography to expose a continuous region of the resist layer with a sub-resolution unexposed resist portion at the interface between the resist and the substrate. The resist portion remaining at the interface, after removal of the exposed region, provides a basis for a chemical epitaxy template. The method may allow for simple, direct photolithography to form a patterned chemical epitaxy template and optionally include an accurately co-aligned graphoepitaxy feature and/or a substrate alignment feature. | 02-05-2015 |
20150034595 | METHOD OF PRODUCING STRUCTURE CONTAINING PHASE-SEPARATION STRUCTURE, METHOD OF FORMING PATTERN, AND METHOD OF FORMING FINE PATTERN - A method of forming a structure containing a phase-separated structure, the method including: a step of forming a layer containing a block copolymer having a plurality of blocks bonded and a purity of 98% or more, and a step of phase-separating the layer containing the block copolymer. | 02-05-2015 |
20150076108 | Lithography Process Using Directed Self Assembly - A method includes forming a patterned hard mask layer, with a trench formed in the patterned hard mask layer, dispensing a Bulk Co-Polymer (BCP) coating in the trench, wherein the BCP coating comprises a mix of a first material and a second material different from the first material. The method further includes treating the BCP coating with a chemical to form a first plurality of strips of the first material and a second plurality of strips of the second material, with the first plurality of strips and the second plurality of strips allocated in an alternating layout. The second plurality of strips is selectively etched, and the first plurality of strips is left in the trench. | 03-19-2015 |
20150090691 | MATERIAL FOR FORMING UNDERLAYER FILM LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY AND PATTERN FORMING METHOD - Material for forming an underlayer film for lithography, which has a high carbon concentration, a low oxygen concentration, a relatively high heat resistance and also a relatively high solvent solubility, and which can be applied to a wet process is disclosed. Material for forming an underlayer film for lithography contains a compound represented by general formula (1). | 04-02-2015 |
20150301445 | COMPOSITION FOR BASE, AND DIRECTED SELF-ASSEMBLY LITHOGRAPHY METHOD - A composition for a base of a directed self-assembling film includes a compound including an oxo acid group, and a solvent. The compound is preferably represented by formula (1). A represents an organic group having 10 or more carbon atoms and having a valency of n. B represents an oxo acid group. n is an integer of 1 to 200. In a case where n is 2 or greater, a plurality of Bs are identical or different. | 10-22-2015 |
20150301448 | MONOMER, HARD MASK COMPOSITION COMPRISING SAID MONOMER, AND METHOD FOR FORMING PATTERN USING SAID HARD MASK COMPOSITION - Disclosed are a monomer for a hardmask composition represented by the Chemical Formula 1, a hardmask composition including the monomer, and a method of forming a pattern using the same. | 10-22-2015 |
20150361257 | METHOD FOR PRODUCING SUBSTRATE HAVING PATTERN AND RESIN COMPOSITION FOR HYDROFLUORIC ACID ETCHING - The method of the invention for producing a substrate having a pattern includes a step of forming a resist film by applying, onto a substrate, a composition containing a resin as component (A), the resin being formed through reaction between a polyol (a1) and a cross-linking agent (a2), the polyol (a1) being selected from among a polybutadiene polyol, a hydrogenated polybutadiene polyol, a polyisoprene polyol, and a hydrogenated polyisoprene polyol, and a step of patterning, through etching, the substrate on which the resist film has been formed. | 12-17-2015 |
20150371830 | METHOD FOR ETCHING INSULATION FILM - Disclosed is a method for etching an insulation film of a processing target object. The method includes: in a first term, periodically switching ON and OFF of a high frequency power so as to excite a processing gas containing fluorocarbon and supplied into a processing container of a plasma processing apparatus; and in a second term subsequent to the first term, setting the high frequency power to be continuously turned ON so as to excite the processing gas supplied into the processing container. In one cycle consisting of a term where the high frequency is turned ON and a term where the high frequency power is turned OFF in the first term, the second term is longer than the term where the high frequency power is turned ON. | 12-24-2015 |
20150376408 | METHODS FOR MANUFACTURING BLOCK COPOLYMERS AND ARTICLES MANUFACTURED THEREFROM - Disclosed herein is a composition comprising a first block copolymer that comprises a first block and a second block; where the first block has a higher surface energy than the second block; a second block copolymer that comprises a first block and a second block; where the first block of the first block copolymer is chemically the same as or similar to the first block of the second block copolymer and the second block of the first block copolymer is chemically the same as or similar to the second block of the second block copolymer; where the weight percent based on total solids of the first block of the second block copolymer is greater than that of the first block of the first block copolymer; where the first block copolymer phase separates into a first morphology of cylindrical or lamellar domains when disposed singly on a substrate. | 12-31-2015 |
20150376455 | COMPOSITIONS FOR CONTROLLED ASSEMBLY AND IMPROVED ORDERING OF SILICON-CONTAINING BLOCK COPOLYMERS - The invention provides compositions and methods for inducing and enhancing order and nanostructures in organosilicon block copolymers compositions by including certain organic additives in such compositions that include one or more moieties comprising a hydrogen bond acceptor or a hydrogen bond donor. Such block copolymer compositions may be used, for example, as a mask for lithographic patterning as is used, for example, during various stages of semiconductor device fabrication. | 12-31-2015 |
20160023238 | Direct Current Superposition Curing for Resist Reflow Temperature Enhancement - Techniques herein include methods for curing a layer of material (such as a resist) on a substrate to enable relatively greater heat reflow resistance. Increasing reflow resistance enables successful directed self-assembly of block copolymers. Techniques include receiving a substrate having a patterned photoresist layer and positioning this substrate in a processing chamber of a capacitively coupled plasma system. The patterned photoresist layer is treated with a flux of electrons by coupling negative polarity direct current power to a top electrode of the plasma processing system during plasma processing. The flux of electrons is accelerated from the top electrode with sufficient energy to pass through a plasma and its sheath, and strike the substrate such that the patterned photoresist layer changes in physical properties, which can include an increased glass-liquid transition temperature. | 01-28-2016 |
20160027614 | DEPOSITION OF METAL DOPED AMORPHOUS CARBON FILM - Embodiments of the present disclosure relate to a metal-doped amorphous carbon hardmask for etching the underlying layer, layer stack, or structure. In one embodiment, a method of processing a substrate in a processing chamber includes exposing a substrate to a gas mixture comprising a carbon-containing precursor and a metal-containing precursor, reacting the carbon-containing precursor and the metal-containing precursor in the processing chamber to form a metal-doped carbon layer over a surface of the substrate, forming in the metal-doped carbon layer a defined pattern of through openings, and transferring the defined pattern to an underlying layer beneath the metal-doped carbon layer using the metal-doped carbon layer as a mask. An etch hardmask using the inventive metal-doped amorphous carbon film provides reduced compressive stress, high hardness, and therefore higher etch selectivity. | 01-28-2016 |
20160033871 | MULTI-LINE WIDTH PATTERN CREATED USING PHOTOLITHOGRAPHY - Systems and methods are provided for forming features through photolithography. A polymer layer is formed over a substrate. The polymer layer is patterned to form a first feature and a second feature, the first feature and the second feature being separated at a first distance. A rinse material is applied to the polymer layer including the first feature and the second feature. The rinse material is removed from the polymer layer including the first feature and the second feature to cause the first feature and the second feature to come into contact with each other. A third feature is formed based on the first feature and the second feature being in contact with each other. | 02-04-2016 |
20160060410 | PATTERN FORMING METHOD - A pattern is formed by forming a first pattern on a first film, forming a block copolymer layer including a first block chain and a second block chain on the first pattern, forming a second pattern, forming a second film on the second pattern, selectively removing the second film until the second pattern is exposed, forming a third pattern, and processing the first film using the third pattern as a mask. The second pattern is formed by microphase-separating the block copolymer layer, and removing the first block chain or the second block chain. The second film is formed by applying a material having an etch rate that is less than an etch rate of a material of the first pattern and the second pattern. The third pattern is formed by selectively removing the second pattern and the first pattern using the second film as a mask. | 03-03-2016 |
20160122859 | METHOD FOR DIRECTED SELF-ASSEMBLY (DSA) OF BLOCK COPOLYMERS USING GUIDING LINE SIDEWALLS - A guiding pattern for directed self-assembly (DSA) of a block copolymer (BCP) is an array of spaced guiding stripes on a substrate that have a width equal to nL | 05-05-2016 |
20160138169 | METHOD OF FORMING A FINE PATTERN - A method of forming a fine pattern includes providing a first metal layer on a base substrate, providing a first passivation layer on the first metal layer, providing a mask pattern on the first passivation layer, providing a partitioning wall pattern having a reverse taper shape by etching the first passivation layer, coating a composition having a block copolymer between the partitioning wall patterns adjacent each other, providing a self-aligned pattern by heating the composition, and providing a metal pattern by etching the first metal layer using the self-aligned pattern as a mask. | 05-19-2016 |