| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 216044000 | Mechanically forming pattern into a resist | 12 |
| 20100170870 | IMPRINT PROCESS OF THERMOSETTING MATERIAL - An imprint process of a thermosetting material is described, comprising: providing a mold including pattern structures, wherein convex portions and concave portions of the pattern structures are covered with a transferred material layer; providing a substrate, wherein a thermosetting material layer and a sacrificial layer cover the substrate in sequence; performing an imprint step to transfer the transferred material layer on the convex portions onto a first portion of the sacrificial layer; etching a second portion of the sacrificial layer and the underlying thermosetting material layer by using the transferred material layer as a mask; and performing a wet stripping step by using a stripper to completely etch the sacrificial layer and the overlying transferred material layer, wherein the stripper has a first etching rate and a second etching rate to the thermosetting material layer and the sacrificial layer respectively, and a ratio of the second etching rate to the first etching rate is greater than or equal to 30. | 07-08-2010 |
| 20110042352 | IMPRINT METHOD AND PROCESSING METHOD OF SUBSTRATE USING THE IMPRINT METHOD - An imprint method for imprinting a pattern of a mold onto a resin material on a substrate. The imprint method includes a step of forming a processed area in which an imprint pattern corresponding to the pattern of the mold is formed, and an outside area formed of a periphery of the processed area, by bringing the mold into contact with the resin material formed on the substrate, so that a portion of the resin material is extruded from the processed area into the outside area, a step of forming a protection layer for protecting the processed area, and a step of removing a layer of the resin material in the outside area, while the imprint pattern formed on a layer of the resin material in the processed area, is protected by the protection layer, so as not to be removed. | 02-24-2011 |
| 20110056911 | Positive Tone Bi-Layer Method - Methods of imprint lithography are described. Generally, the methods include imprinting, via a patterned mold, a pattern into a polymerizable fluid composition on a substrate to form a patterned imprinting layer. A conformal layer is overlayed on the patterned imprinting layer. A portion of the conformal layer is used as a hard mask for subsequent processing. The imprinted pattern may be transferred to the substrate by a plurality of etches. | 03-10-2011 |
| 20110073563 | Patterning Method for Carbon-Based Substrate - A patterning method for a carbon-based substrate is provided. The patterning method for the carbon-based substrate includes the following steps. The carbon-based substrate is provided. An atmospheric pressure plasma is produced from a plasma gas under an open air environment. The plasma gas includes oxygen. The carbon-based substrate is etched by the atmospheric pressure plasma. | 03-31-2011 |
| 20110290759 | PATTERN FORMATION METHOD - A pattern is formed by: forming a first imprint mask layer on a processed member; forming a first imprint pattern of the first imprint mask layer using a first template; forming a second imprint mask layer made of a material having a different etching rate from the first imprint mask layer on the first imprint pattern; forming a second imprint pattern of the second imprint mask layer using a second template different from the first template; and etching the processed member using as a mask the second imprint mask layer on which the second imprint pattern is formed and the first imprint mask layer on which the first imprint pattern is formed. | 12-01-2011 |
| 20120097640 | RESIN COMPOSITION FOR PATTERN FORMATION, PATTERN FORMATION METHOD AND PROCESS FOR PRODUCING LIGHT-EMITTING ELEMENT - Disclosed are: a resin composition for pattern formation, which enables the stable formation of a pattern at a level of the wavelength of light; a method for forming a pattern having a sea-island structure using the composition; and a process for producing a light-emitting element that can achieve high luminous efficiency properties. The resin composition for pattern formation comprises: (a) a specific block copolymer containing an aromatic ring-containing polymer and a poly(meth)acrylate as block moieties; (b) a homopolymer of a specific aromatic ring-containing polymer; and (c) a homopolymer of a specific poly(meth)acrylate, wherein the ratio of the total amount of the aromatic ring-containing homopolymer (b) and the poly(meth)acrylate homopolymer (c) relative to the entire resin composition is 0% by weight to 90% by weight, and the total amount of an aromatic ring-containing polymer moiety contained in the block copolymer (a) as a block moiety and the aromatic ring-containing homopolymer (b) relative to the entire resin composition is 10% by weight to 60% by weight. | 04-26-2012 |
| 20120168404 | METHODS OF FABRICATING NANOIMPRINT STAMP - A method of fabricating a nanoimprint stamp includes forming a resist pattern having a nano size width on a stamp substrate by performing imprint processes repeatedly. In the imprint processes, resist layers that are selectively etched are sequentially used. The stamp substrate is etched using the resist pattern as an etch mask. | 07-05-2012 |
| 20120187085 | CRITICAL DIMENSION CONTROL DURING TEMPLATE FORMATION - Thickness of a residual layer may be altered to control critical dimension of features in a patterned layer provided by an imprint lithography process. The thickness of the residual layer may be directly proportional or inversely proportional to the critical dimension of features. Dispensing techniques and material selection may also provide control of the critical dimension of features in the patterned layer. | 07-26-2012 |
| 20140054264 | METHOD OF MANUFACTURING NANOIMPRINT STAMP - Methods of manufacturing a nanoimprint stamp are provided. The method may include forming a pattern on a surface of a master substrate, depositing an etch barrier layer on a surface of a stamp substrate, coating a photoresist on one of the surfaces of the master substrate and the stamp substrate on which an etch barrier layer is formed, forming a photoresist pattern by pressing the master substrate against the stamp substrate, forming a hard mask by etching the etch barrier layer using the photoresist pattern, and etching the stamp substrate using the hard mask as an etch mask. | 02-27-2014 |
| 20140138354 | IMPRINT METHOD - An imprint method according to this embodiment includes preparing a mold having a recessed portion, filling the recessed portion with a mold non-reactive material, pressing the mold against a resist which is applied on a base material, curing the resist in a state that the mold is pressed, and separating the mold from the base material. The mold non-reactive material is a material which does not chemically react with a material of the mold. By curing of the resist, the resist and the mold non-reactive material are coupled. When the mold is separated from the base material, the resist and the mold non-reactive material are left on the base material. | 05-22-2014 |
| 20140367358 | COMPOSITION FOR FORMING PATTERN AND IN-PLANE PRINTING METHOD USING THE SAME - A composition for forming a pattern includes: about 1% to about 10% by weight of a liquid prepolymer, about 40% to about 60% by weight of an acrylate having a hydrophilic group, about 10% to about 20% by weight of a viscosity modifier, about 1% to about 5% by weight of a photoinitiator, and an additive. | 12-18-2014 |
| 20140374380 | STAMPER AND METHOD OF MANUFACTURING BIT PATTERNED MEDIUM USING STAMPER - A stamper of an embodiment includes: a base portion having a main surface; and a plurality of guides arranged on the main surface in mutually different first and second directions and serving as references of arrangement of a plurality of self-assembled dots. A distance between the guides in a third direction is within a range of an integer m | 12-25-2014 |
