| Entries |
| Document | Title | Date |
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| 20080245767 | Pre-cleaning of substrates in epitaxy chambers - A method for processing a substrate including a pre-cleaning etch and reduced pressure process is disclosed. The pre-cleaning process involves introducing a substrate into a processing chamber; flowing an etching gas into the processing chamber; processing at least a portion of the substrate with the etching gas to remove a contaminated or damaged layer from a substrate surface; stopping flow of the etching gas; evacuating the processing chamber to achieve a reduced pressure in the chamber; and processing the substrate surface at the reduced pressure. Epitaxial deposition is then used to form an epitaxial layer on the substrate surface. | 10-09-2008 |
| 20080308526 | Minimization of mask undercut on deep silicon etch - A method for forming features in a silicon layer is provided. A mask is formed with a plurality of mask openings over the silicon layer. A polymer layer is deposited over the mask by flowing a hydrogen free deposition gas comprising C | 12-18-2008 |
| 20090032495 | Method for etching metal nitride with high selectivity to other materials - A method and system of etching a metal nitride, such as titanium nitride, is described. The etching process comprises introducing a process composition having a halogen containing gas, such as Cl | 02-05-2009 |
| 20090039055 | Method For Making An Aligned Carbon Nanotube - A method for making an aligned carbon nanotube includes the steps of a) applying a layer of a ferrosilicon alloy film onto a substrate, b) etching the layer of the ferrosilicon film to form a plurality of fine ferrosilicon alloy particles that are distributed properly on the substrate, and c) placing the substrate of step (b) into a microwave plasma enhanced chemical vapor deposition system, and supplying a mixture of a carbon-containing reaction gas and a balance gas at a predetermined flow ratio so as to grow carbon nanotubes on the fine ferrosilicon alloy particles, wherein said ferrosilicon alloy of step (a) comprises silicon ranging from 15 wt % to 25 wt %; and step (c) is conducted at a temperature ranging from 300 to 380° C. | 02-12-2009 |
| 20090095710 | METHOD FOR CONTINUAL PREPARATION OF POLYCRYSTALLINE SILICON USING A FLUIDIZED BED REACTOR - There is provided a method for continual preparation of granular polycrystalline silicon using a fluidized bed reactor, enabling a stable, long-term operation of the reactor by effective removal of silicon deposit accumulated on the inner wall of the reactor tube. The method comprises (i) a silicon particle preparation step, wherein silicon deposition occurs on the surface of the silicon particles, while silicon deposit is accumulated on the inner wall of the reactor tube encompassing the reaction zone; (ii) a silicon particle partial discharging step, wherein a part of the silicon particles remaining inside the reactor tube is discharged out of the fluidized bed reactor so that the height of the bed of the silicon particles does not exceed the height of the reaction gas outlet; and (iii) a silicon deposit removal step, wherein the silicon deposit is removed by supplying an etching gas into the reaction zone. | 04-16-2009 |
| 20090242511 | SEASONING METHOD FOR FILM-FORMING APPARATUS - A seasoning method for a film-forming apparatus configured to form a silicon nitride film on a substrate placed in a process chamber. The method is conducted for reducing particles in the apparatus. The method comprises executing the plasma cleaning of the process chamber to remove a film deposited on the inner wall thereof (step S | 10-01-2009 |
| 20090272717 | METHOD AND APPARATUS OF A SUBSTRATE ETCHING SYSTEM AND PROCESS - Embodiments of the invention relate to a substrate etching system and process. In one embodiment, a method may include depositing material on the substrate during a deposition process, etching a first layer of the substrate during a first etch process, and etching a second layer of the substrate during a second etch process, wherein a first bias power is applied to the substrate during the first process, and wherein a second bias power is applied to the substrate during the second etch process. In another embodiment, a system may include a gas delivery system containing a first gas panel for supplying a first gas to a chamber, a second gas panel for supplying a second gas to the chamber, and a plurality of flow controllers for directing the gases to the chamber to facilitate rapid gas transitioning between the gases to and from the chamber and the panels. | 11-05-2009 |
| 20090272718 | METHODS FOR SELECTIVE PRE-COATING OF A PLASMA PROCESSING CHAMBER - A method for processing a substrate in a plasma processing system is provided. The method includes disposing a first confinement ring set in a first position. The method also includes depositing a first coating on a first portion of the plasma processing system using a first plasma in a first area defined by the first confinement ring set in the first position. The method further includes depositing a second coating on a second portion of the plasma processing system using a second plasma in a second area between the first confinement ring set in the first position and a second confinement ring set. The method yet also includes processing the substrate using a third plasma with the first confinement ring set disposed in a second position. | 11-05-2009 |
| 20090277871 | PLASMA MEDIATED ASHING PROCESSES THAT INCLUDE FORMATION OF A PROTECTIVE LAYER BEFORE AND/OR DURING THE PLASMA MEDIATED ASHING PROCESS - Processes for stripping high dose ion implanted photoresist while minimizing substrate loss. The processes generally include passivation of the substrate surface before and/or during a plasma mediated stripping process. By passivating the substrate surface before and/or during the plasma mediated stripping process, oxidation is substantially reduced during plasma stripping thereby leading to reduced substrate loss. | 11-12-2009 |
| 20090302000 | PATTERN FORMING METHOD - A pattern forming method according to an embodiment of the present invention includes forming, on a substrate, a base pattern having a space part, adjusting a width of the space part to make a bottom width of the space part closer to an upper width of the space part, and forming a modified base pattern having a space part whose bottom width is smaller than the bottom width of the space part of the base pattern, by a process of forming a deposition film on the substrate and the base pattern, and a process of removing the deposition film from a bottom of the space part of the base pattern. | 12-10-2009 |
| 20090308840 | PLASMA CLEANING METHOD AND PLASMA CVD METHOD - A plasma cleaning method is performed in a plasma CVD apparatus for depositing a silicon nitride film on a surface of a target substrate, and includes a stage (S | 12-17-2009 |
| 20090308841 | PATTERN FORMING METHOD, SUBSTRATE PROCESSING METHOD AND MOLD STRUCTURE REPLICATION METHOD - To provide a pattern forming method including: providing an active species supply source to at least one of a mold structure having a plurality of concave portions in its surface, and an object to be patterned; pressing the side of the mold structure, where the concave portions are provided, against the object so as to encapsulate the active species supply source in the concave portions; and oxidatively decomposing parts of the object which are in positions corresponding to the concave portions, by irradiating the active species supply source with excitation light through one of the mold structure and the object. | 12-17-2009 |
| 20100006539 | APPARATUS FOR MANUFACTURING SEMICONDUCTOR - A semiconductor device manufacturing apparatus includes a chamber including a reaction space, a substrate disposing unit configured to dispose a substrate within the chamber, a first heating unit configured to optically heat the reaction space and disposed under the chamber, a second heating unit configured to heat the reaction space through resistive heating and disposed over the chamber, and a plasma generating unit configured to generate plasma in the reaction space. Since the apparatus generates the plasma using the plasma generating unit disposed over the chamber, the deposition process based on heating and the etch process based on the plasma can be simultaneously performed in one single chamber. | 01-14-2010 |
| 20100025365 | METHOD FOR SELECTIVELY ETCHING AREAS OF A SUBSTRATE USING A GAS CLUSTER ION BEAM - A method for selectively etching areas of a substrate is described. The method includes providing in a process chamber a substrate containing a first material having a film deposition surface and a second material having an etch surface. The method further includes forming a gas cluster ion beam (GCIB) from a pressurized gas containing a deposition-etch gas, and exposing the substrate to the GCIB to remove at least a portion of the second material from the etch surface and deposit a thin film on the film deposition surface of the first material. According to some embodiments, the deposition-etch gas may contain silicon (Si) and carbon (C), and it may possess a Si—C bond. | 02-04-2010 |
| 20100044341 | METHOD OF SURFACE TREATMENT FOR ALUMINUM OR ALUMINUM ALLOY - A workpiece to be treated including aluminum or an aluminum alloy on at least a surface thereof is subjected to surface treatment by a method including the steps of immersing in an acidic or alkaline aluminum oxide film-removing solution containing a salt or oxide of a metal capable of substitution with aluminum and forming a substituted metal layer of the metal which is capable of substitution with aluminum and is contained in the removing solution on a surface of the aluminum or aluminum alloy while removing an aluminum oxide film on said aluminum or aluminum alloy surface, forming a substituted zinc film by zinc substitution treatment without removal of the substituted metal layer, removing the substituted metal layer along with the substituted zinc film by means of a liquid having an oxidizing behavior, and subjecting again to zinc substitution treatment to form a substituted zinc film. A plated layer is formed on the aluminum or aluminum alloy on which the substituted zinc film has been formed to obtain good adhesion between the aluminum or aluminum alloy surface and the plated layer. | 02-25-2010 |
| 20100044342 | METHOD FOR CONTINUAL PREPARATION OF POLYCRYSTALLINE SILICON USING A FLUIDIZED BED REACTOR - There is provided a method for continual preparation of granular polycrystalline silicon using a fluidized bed reactor, enabling a stable, long-term operation of the reactor by effective removal of silicon deposit accumulated on the inner wall of the reactor tube. The method comprises (i) a silicon particle preparation step, wherein silicon deposition occurs on the surface of the silicon particles, while silicon deposit is accumulated on the inner wall of the reactor tube encompassing the reaction zone; (ii) a silicon particle partial discharging step, wherein a part of the silicon particles remaining inside the reactor tube is discharged out of the fluidized bed reactor so that the height of the bed of the silicon particles does not exceed the height of the reaction gas outlet; and (iii) a silicon deposit removal step, wherein the silicon deposit is removed by supplying an etching gas into the reaction zone. | 02-25-2010 |
| 20100051581 | PLASMA CLEANING FOR PROCESS CHAMBER COMPONENT REFURBISHMENT - A method for cleaning and refurbishing a chamber component includes placing a chamber component having process deposits on an exterior surface in a plasma vapor deposition chamber. The chamber component is bombarded with a plasma comprising Argon for a period of time sufficient to remove the process deposits from the exterior surface of the chamber component. | 03-04-2010 |
| 20100126960 | Serpentine Microcircuit Vortex Turbulators for Blade Cooling - A cooling microcircuit for use in a turbine engine component is provided. The cooling microcircuit has at least one leg through which a cooling fluid flows. A plurality of cast vortex generators are positioned within the at least one leg to improve the cooling effectiveness of the cooling microcircuit. | 05-27-2010 |
| 20100193468 | METHOD FOR EDGE SEALING BARRIER FILMS - An edge-sealed, encapsulated environmentally sensitive device. The device includes an environmentally sensitive device, and at least one edge-sealed barrier stack. The edge-sealed barrier stack includes a decoupling layer and at least two barrier layers. The environmentally sensitive device is sealed between an edge-sealed barrier stack and either a substrate or another edge-sealed barrier stack. A method of making the edge-sealed, encapsulated environmentally sensitive device is also disclosed. | 08-05-2010 |
| 20100200542 | MEDICAL DEVICE WITH ADHERENT COATING, AND METHOD FOR PREPARING SAME - A medical device such as a wire guide has a lubricious and/or therapeutic coating adhered to an etched, carbonaceous polymeric surface, for example a sodium-etched polymer surface. A method for preparing a lubricious and/or therapeutic coating on a medical device includes etching a polymeric portion of the device to create a carbonaceous surface and applying a lubricious and/or therapeutic coating on the etched surface. | 08-12-2010 |
| 20100213166 | Process and Device for The Precision-Processing Of Substrates by Means of a Laser Coupled Into a Liquid Stream, And Use of Same - The invention relates to a method for precision processing of substrates in which a liquid jet which is directed towards a substrate surface and contains a processing reagent is guided over the regions of the substrate to be processed, a laser beam being coupled into the liquid jet. Likewise, a device which is suitable for implementation of the method is described. The method is used for different process steps in the production of solar cells. | 08-26-2010 |
| 20100213167 | METHOD OF PATTERNING VAPOUR DEPOSITION BY PRINTING - A method of creating a patterned coated layer on a substrate comprises the steps of applying a pattern on the substrate by an additive process using a first material, depositing a second material by vapour deposition over the whole substrate area and removing the first material by treatment with a solvent. | 08-26-2010 |
| 20100213168 | Method For Producing Epitaxially Coated Silicon Wafers - Epitaxially coated silicon wafers, are coated individually in an epitaxy reactor by a procedure in which a silicon wafer on a susceptor in the epitaxy reactor, is pretreated in a first step with a hydrogen flow rate of 1-100 slm and in a second step with hydrogen and an etching medium at a hydrogen flow rate of 1-100 slm, and an etching medium flow rate of 0.5-1.5 slm, at an average temperature of 950-1050° C., and is subsequently coated epitaxially, wherein, during the second pretreatment step, the power of heating elements is regulated such that there is a temperature difference of 5-30° C. between a radially symmetrical central region of the silicon wafer and an outer region of the silicon outside the central region. | 08-26-2010 |
| 20100219157 | FILM FORMING APPARATUS AND FILM FORMING METHOD - A film forming apparatus | 09-02-2010 |
| 20100252529 | PRODUCTION PROCESS FOR STRUCTURE AND PRODUCTION PROCESS FOR LIQUID DISCHARGE HEAD - A production process for a structure comprising: preparing a substrate on which a first layer and a second layer are provided in this order; forming a second mold which is a part of a mold member serving as a mold for forming the structure from the second layer; etching the first layer using the second mold as a mask and thereby forming a first mold which is another part of the mold member from the first layer; providing a coating layer which serves as the structure to cover the first mold and the second mold; and removing the first mold and the second mold and thereby forming the structure. | 10-07-2010 |
| 20100258525 | Method for the Collective Fabrication of Carbon Nanofibers on the Surface of Micropatterns Constructed on the Surface of a Substrate and Structure Comprising Nanofibers on the Surface of Micropatterns - The invention relates to a nanofiber fabrication method comprising nanofiber growth from a catalyst zone, furthermore comprising the following steps:
| 10-14-2010 |
| 20100258526 | METHODS OF FORMING AN AMORPHOUS CARBON LAYER AND METHODS OF FORMING A PATTERN USING THE SAME - In a method of forming an ACL, a substrate is provided in a deposition chamber. A plasma deposition process is performed by providing a deposition gas into the deposition chamber to form the ACL on the substrate. The deposition gas includes a deposition source gas, a carrier gas and a control gas. The deposition source gas includes a hydrocarbon, and the control gas includes at least one of oxygen and oxycarbon. | 10-14-2010 |
| 20100301009 | Method for forming electrode pattern of ceramic substrate - The present invention relates to a method for forming electrode patterns of a ceramic substrate including the steps of: forming a plurality of conductive adhesion patterns on the ceramic substrate to be separated apart from one another; forming a plating seed layer, covering the conductive adhesion patterns, on the ceramic substrate; forming photoresist patterns, exposing parts corresponding to the conductive adhesion patterns, on the plating seed layer; forming a plating layer on the plating seed layer exposed by the photoresist patterns; removing the photoresist patterns; and etching parts of the plating seed layer exposed by removal of the photoresist patterns. | 12-02-2010 |
| 20100308014 | METHOD AND APPARATUS FOR ETCHING - Embodiments of the invention relate to a substrate etching method and apparatus. In one embodiment, a method for etching a substrate in a plasma etch reactor is provided that includes a) depositing a polymer on a substrate in an etch reactor, b) etching the substrate using a gas mixture including a fluorine-containing gas and oxygen in the etch reactor, c) etching a silicon-containing layer the substrate using a fluorine-containing gas without mixing oxygen in the etch reactor, and d) repeating a), b) and c) until an endpoint of a feature etched into the silicon-containing layer is reached. | 12-09-2010 |
| 20100308015 | SUPERFINE-PATTERNED MASK, METHOD FOR PRODUCTION THEREOF, AND METHOD EMPLOYING THE SAME FOR FORMING SUPERFINE-PATTERN - There is provided a method for forming a superfine pattern, which can simply produce a superfine pattern with high mass productivity. | 12-09-2010 |
| 20100326956 | METHOD FOR MANUFACTURING SUBSTRATE FOR MASS SPECTROMETRY - A substrate for mass spectrometry for effectively performing ionization has been demanded. The substrate for mass spectrometry includes a base, a porous film formed on the base, and an inorganic material film formed on the porous film. The inorganic material film has a plurality of concaves formed vertically to the base, and the diameter of the concaves is not less than 1 nm and less than 1 μm. | 12-30-2010 |
| 20110024390 | Apparatus and process for removing oxidation scale from metal - The invention provides an improved apparatus and method for removing oxidized and embedded scale from sheet metal by high pressure spraying a diluted hydrochloric acid water mixture onto the surface of the sheet metal. The contaminated water/acid solution is then re-circulated to remove ferrous chloride from the acid and water solution. The cleansed acid and water solution are recycled for reuse. The sheet metal is rinsed with hot water, dried, oiled and rolled. The rinse water is re-circulated to remove acid droplets and the acid droplets are recycled to an acid storage tank. Any contaminants removed from the rinse water are recycled to a combination filter and reverse osmosis system. The clean rinse water is reused to rinse further sheet metal. | 02-03-2011 |
| 20110024391 | Methods for creating a surface energy gradient - A method of derivatizing a fluid-impervious surface with a mixed monolayer to create a surface energy gradient comprising the steps of
| 02-03-2011 |
| 20110036809 | Microchannel forming method and nanotipped dispensing device having a microchannel - A method of forming a microchannel as well as a thin film structure including same is made by forming a first thin film on a side of a substrate, forming a fugitive second thin film on the first thin film such that the second thin film defines a precursor of the elongated microchannel and a plurality of extensions connected to and extending transversely relative to the precursor along a length thereof A third thin film is formed on the first thin film and the fugitive second thin film such that the second thin film resides between the first thin film and the third thin film. A respective access site is formed in a region of the third thin film residing on a respective extension and penetrating to the fugitive second thin film. The fugitive second thin film forming the precursor is selectively removed from between the first thin film and the third thin film using an etching medium introduced through the access sites, thereby forming the microchannel between the first thin film and the third thin film. The method preferably further includes forming a sealing layer on the third thin film in a manner to close off open access sites remaining after selective removal of the second thin film. | 02-17-2011 |
| 20110042350 | METHOD FOR FABRICATING 3D STRUCTURE HAVING HYDROPHOBIC SURFACE BY DIPPING METHOD - A method for fabricating a 3D (three-dimensional) structure is disclosed to provide hydrophobicity to a surface of a 3D structure by using a dipping method in which a predetermined-shaped structure is immersed in a molten metal solution. The method includes: immersing a predetermined-shaped structure in a molten metal solution to coat a molten metal material on the surface of the predetermined-shaped structure; anodizing a metal base coated with the molten metal material; coating a polymer material on an outer surface of the metal-coated base to form a negative replica structure; covering an outer surface of the negative replica structure with an outer formation material; and removing the metal-coated base from the negative replica structure and the outer formation material. | 02-24-2011 |
| 20110042351 | METHOD FOR PREPARING ULTRAFLAT, ATOMICALLY PERFECT AREAS ON LARGE REGIONS OF A CRYSTAL SURFACE BY HETEROEPITAXY DEPOSITION - A novel method of forming large atomically flat areas is described in which a crystalline substrate having a stepped surface is exposed to a vapor of another material to deposit a material onto the substrate, which material under appropriate conditions self arranges to form 3D islands across the substrate surface. These islands are atomically flat at their top surface, and conform to the stepped surface of the substrate below at the island-substrate interface. Thereafter, the deposited materials are etched away, in the etch process the atomically flat surface areas of the islands transferred to the underlying substrate. Thereafter the substrate may be cleaned and annealed to remove any remaining unwanted contaminants, and eliminate any residual defects that may have remained in the substrate surface as a result of pre-existing imperfections of the substrate. | 02-24-2011 |
| 20110049095 | METHOD OF FORMING HYDROPHOBIC COATING LAYER ON SURFACE OF NOZZLE PLATE OF INKJET PRINTHEAD - A method of forming a hydrophobic coating layer on a surface of a nozzle plate of an inkjet printhead includes forming a plurality of nozzles in the nozzle plate, each of the nozzles having an exit, stacking a film on the surface of the nozzle plate to cover the exit of each of the nozzles, forming a predetermined metal layer on an inner wall of each of the nozzles and an inner surface of the film covering the exit of each of the nozzles using a plating method, removing the film from the surface of the nozzle plate, forming a hydrophobic coating layer on the surface of the nozzle plate to cover the metal layer exposed through the exit of each of the nozzles, and removing the metal layer formed on the inner wall of each of the nozzles and the hydrophobic coating layer formed on the surface of the metal layer. | 03-03-2011 |
| 20110056909 | METHODS OF MAKING MEDICAL DEVICES - Scaffold-supported metal or pseudometallic film covers suitable for use as medical devices are disclosed together with methods of fabricating the devices. Methods for making the medical devices consist of either providing or forming a scaffold, then depositing a metallic or pseudometallic film cover onto the scaffold in such a manner as to form an integral, substantially monolithic junction between the deposited cover material and the scaffold. | 03-10-2011 |
| 20110100955 | APPARATUS AND METHODS FOR FORMING ENERGY STORAGE AND PHOTOVOLTAIC DEVICES IN A LINEAR SYSTEM - A method and apparatus are provided for formation of a composite material on a substrate. The composite material includes carbon nanotubes and/or nanofibers, and composite intrinsic and doped silicon structures. In one embodiment, the substrates are in the form of an elongated sheet or web of material, and the apparatus includes supply and take-up rolls to support the web prior to and after formation of the composite materials. The web is guided through various processing chambers to form the composite materials. In another embodiment, the large scale substrates comprise discrete substrates. The discrete substrates are supported on a conveyor system or, alternatively, are handled by robots that route the substrates through the processing chambers to form the composite materials on the substrates. The composite materials are useful in the formation of energy storage devices and/or photovoltaic devices. | 05-05-2011 |
| 20110100956 | METAL-PASSIVATING CMP COMPOSITIONS AND METHODS - The present invention provides chemical-mechanical polishing (CMP) compositions and methods for polishing copper- and/or silver-containing substrates. The compositions of the present invention comprise a particulate abrasive, a primary film-forming metal-complexing agent, and a secondary film-forming metal-passivating agent in an aqueous carrier. Methods of polishing a substrate with the compositions of the invention are also disclosed. | 05-05-2011 |
| 20110139747 | SUBSTRATE SECTION FOR FLEXIBLE DISPLAY DEVICE, METHOD OF MANUFACTURING THE SUBSTRATE SECTION, AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY DEVICE INCLUDING THE SUBSTRATE - A substrate section for a flexible display device is disclosed. The substrate section includes: a first substrate, a second substrate disposed above a center region of the first substrate, a reinforcing layer disposed between the first and second substrates, configured to reinforce adhesion between the first and second substrates, and a barrier layer disposed above the second substrate and surrounding side surfaces of the second substrate and of the reinforcing layer. | 06-16-2011 |
| 20110139748 | ATOMIC LAYER ETCHING WITH PULSED PLASMAS - A system and method for rapid atomic layer etching (ALET) including a pulsed plasma source, with a spiral coil electrode, a cooled Faraday shield, a counter electrode disposed at the top of the tube, a gas inlet and a reaction chamber including a substrate support and a boundary electrode. The method includes positioning an etchable substrate in a plasma etching chamber, forming a product layer on the surface of the substrate, removing a portion of the product layer by pulsing a plasma source, then repeating the steps of forming a product layer and removing a portion of the product layer to form an etched substrate. | 06-16-2011 |
| 20110168669 | METHOD OF PREPARING LOW RESISTANCE METAL LINE, PATTERNED METAL LINE STRUCTURE, AND DISPLAY DEVICE USING THE SAME - Disclosed herein is a method of preparing a low resistance metal line, in which a wet plating technique is used instead of a vacuum film forming process in order to simplify the process and decrease the manufacturing cost. In addition, a self-assembled monolayer is formed that facilitates the increased adsorption density and strength of the metal catalyst resulting in the formation of a high-density metal catalyst layer, thereby obtaining a high-quality metal line. Also disclosed herein, are a patterned metal line structure, and a display device using the same. | 07-14-2011 |
| 20110174773 | SUBSTRATE FOR BIOCHIP, BIOCHIP, METHOD FOR MANUFACTURING SUBSTRATE FOR BIOCHIP, AND METHOD FOR MANUFACTURING BIOCHIP - A base plate having a surface on which a plurality of hydroxyl groups can be introduced, a metallic membrane disposed on the base plate and having a plurality of wells reaching the base plate, and a crosslinkable polymer membrane disposed on the metallic membrane are included. | 07-21-2011 |
| 20110186543 | SYSTEM AND METHOD FOR ALIGNMENT OF NANOPARTICLES ON SUBSTRATE - The invention provides a system and method for alignment of nanoparticles on a substrate. The system includes: a substrate; a plurality of polypeptide templates formed on the substrate; and a plurality of nanoparticles formed on the polypeptide templates. The method includes: providing a substrate; forming a plurality of polypeptide templates on the substrate; and forming a plurality of nanoparticles on the polypeptide templates. | 08-04-2011 |
| 20110204023 | MULTI INDUCTIVELY COUPLED PLASMA REACTOR AND METHOD THEREOF - Disclosed is a multi-inductively coupled plasma reactor and method thereof. In a multi-inductively coupled plasma reacting method, an etching method to increase a specific portion of a substrate to be processed includes etching a specific portion of a substrate to be processed; and depositing a passivation layer on a surface of the specific portion etched, wherein the etching and depositing steps are repeatedly proceeded, and one of both steps is executed when there is plasma formed by a central plasma source and a peripheral plasma source. According to the multi-inductively coupled plasma reactor and method thereof of the invention, it is possible that plasma is uniformly processed on the entire area of the substrate since the central plasma source and the peripheral source are provided separately. Further, it is possible to form an independent multiple plasma area without electrical interference in the plasma reactor using the interference prevention electrode grounded between the central plasma source and the peripheral plasma source. Further, the plasma formed by the central plasma source and the peripheral plasma source is used to deeply etch a specific portion of the substrate to be processed. | 08-25-2011 |
| 20110204024 | POLISHING METHOD - A defect distribution in the vicinity of a surface of a glass substrate is inspected by a positron annihilation gamma ray measurement. A buffer layer including a brittle layer and/or a coating layer is created on the surface of the glass substrate. The brittle layer is formed by irradiating a gas cluster ion on the surface to deteriorate the glass. The coating layer is formed by coating the surface with a soft substance. Next, a thickness of the created buffer layer is measured by a positron annihilation gamma ray measurement. The surface of the glass substrate is then cleaned. To create a slurry, abrasive particles for the slurry are uniformly scattered on a polishing implement for polishing the glass substrate and a liquid component for the slurry is added thereto. The glass substrate is then chemically mechanically polished from the buffer layer with the slurry. | 08-25-2011 |
| 20110204025 | SUBSTRATE PROCESSING METHOD - A silicon-containing film on a substrate is subjected to a plasma process using a process gas containing fluorine and carbon, and is thereafter subjected to plasma process using an ammonia gas, whereby ammonium silicofluoride having toxicity and hygroscopic property is adhered to the substrate. The harmful ammonium silicofluoride is removed by the inventive method. After conducting the plasma process using an ammonia gas, the substrate is heated to a temperature not lower than the decomposition temperature of the ammonium silicofluoride to decompose the ammonium silicofluoride in a process container in which the plasma process was conducted, or in a process container connected with the processing vessel which the plasma process was conducted therein and is isolated from a clean room atmosphere. | 08-25-2011 |
| 20110215071 | WAFER CARRIER WITH SLOPED EDGE - A wafer carrier includes a body defining a central axis, a generally planar top surface perpendicular to the central axis, and pockets recessed below the top surface for receiving wafers. The body can include a lip projecting upwardly around the periphery of the top surface. The lip can define a lip surface sloping upwardly from the planar top surface in a radially outward direction away from the central axis. The body can be adapted for mounting on a spindle of a processing apparatus so that the central axis of the body is coaxial with the spindle. The lip can improve the pattern of gas flow over the top surface of the wafer carrier. | 09-08-2011 |
| 20110220612 | Method for Manufacturing Wire for Dental Correction - Disclosed is a method of manufacturing a wire for straightening irregular teeth, which is not harmful to a human body and preserves the color of the teeth. The method of manufacturing a wire for straightening irregular teeth includes manufacturing a metal wire with metal alloy; physically or chemically etching a surface of the metal wire and then performing heat treatment; coating the surface of the metal wire with a metal material, Teflon, epoxy or urethane to show white or ivory and then performing heat treatment; forming a transparent parylene film on the metal material, Teflon, epoxy or urethane and then performing heat treatment; and removing one side of the foregoing coating layer from the surface of the metal wire, and then applying surface treatment to the one side with the coating layer removed. | 09-15-2011 |
| 20110226733 | PATTERNING PROCESS - A patterning process comprises (a) providing at least one substrate having at least one major surface; (b) providing at least one patterning composition comprising at least one functionalizing molecule that is a perfluoropolyether organosulfur compound; (c) applying the patterning composition to the major surface of the substrate in a manner so as to form at least one functionalized region and at least one unfunctionalized region of the major surface; and (d) etching at least a portion of the unfunctionalized region. | 09-22-2011 |
| 20110233169 | TITANIUM NANO-SCALE ETCHING ON AN IMPLANT SURFACE - A method of forming an implant to be implanted into living bone is disclosed. The method comprises the act of roughening at least a portion of the implant surface to produce a microscale roughened surface. The method further comprises the act of immersing the microscale roughened surface into a solution containing hydrogen peroxide and a basic solution to produce a nanoscale roughened surface consisting of nanopitting superimposed on the microscale roughened surface. The nanoscale roughened surface has a property that promotes osseointegration. | 09-29-2011 |
| 20110240595 | Super-Hydrophobic Surfaces, Methods of Their Construction and Uses Therefor - This invention provides novel super-liquidphobic nanofibers and structures comprising such nanofibers, as well as methods and uses for such nanofibers. | 10-06-2011 |
| 20110272381 | Methods Of Utilizing Block Copolymer To Form Patterns - Some embodiments include methods of forming patterns. A block copolymer film may be formed over a substrate, with the block copolymer having an intrinsic glass transition temperature (T | 11-10-2011 |
| 20110272382 | TEMPLATE MANUFACTURING METHOD, TEMPLATE INSPECTING METHOD AND INSPECTING APPARATUS, NANOIMPRINT APPARATUS, NANOIMPRINT SYSTEM, AND DEVICE MANUFACTURING METHOD - There is provided a template inspection apparatus which inspects a replica template, manufactured by an imprinting method from a master template having a depression/protrusion pattern, the template inspection apparatus including: an inspection light source part which radiates inspection light of plane waves; a stage configured to dispose the master template and the replica template so as to be in close proximity with each other and be irradiated by the inspection light; and a detection part which detects light of a component transmitting through the master template and the replica template and different from the plane waves. Accordingly, a template can be inspected in a short time. | 11-10-2011 |
| 20110309049 | TECHNIQUES FOR PLASMA PROCESSING A SUBSTRATE - Techniques for plasma processing a substrate are disclosed. In one particular exemplary embodiment, the technique may be realized with a method comprising introducing a feed gas proximate to a plasma source, where the feed gas may comprise a first and second species, where the first and second species have different ionization energies; providing a multi-level RF power waveform to the plasma source, where the multi-level RF power waveform has at least a first power level during a first pulse duration and a second power level during a second pulse duration, where the second power level may be different from the first power level; ionizing the first species of the feed gas during the first pulse duration; ionizing the second species during the second pulse duration; and providing a bias to the substrate during the first pulse duration. | 12-22-2011 |
| 20110315658 | ALUMINUM OXIDE FILM REMOVER AND METHOD FOR SURFACE TREATMENT OF ALUMINUM OR ALUMINUM ALLOY - Disclosed herein is an aluminum oxide film remover for removing an oxide film on the surface of aluminum or aluminum alloy, which comprises silver ions and/or copper ions, a solubilizing agent for silver ions and/or copper ions, and a quaternary ammonium hydroxide compound, and has a pH value of 10 to 13.5. A method for surface treatment of aluminum or aluminum alloy is also disclosed, which comprises immersing a workpiece having aluminum or aluminum alloy at least on the surface thereof in the aluminum oxide film remover, and depositing the silver and/or copper contained in the remover on the surface of aluminum or aluminum alloy while removing the aluminum oxide film. | 12-29-2011 |
| 20110315659 | PATTERN FORMATION METHOD AND IMPRINT MATERIAL - According to one embodiment, a pattern formation method is disclosed. The method can include forming a foundation film on a patterning film. The foundation film includes a reaction initiator to produce at least one of an acid and a base. The method can include forming an imprint film having an uneven configuration by coating an imprint material onto the foundation film and by causing a template to contact the imprint material. The method can include increasing an etching rate of a first portion of the imprint film higher than a second portion by introducing the at least one of acid and base into the first portion. The first portion is on the foundation film side. The second portion is a portion excluding the first portion. The method can include patterning the patterning film using a protruding portion of the uneven configuration as a mask. | 12-29-2011 |
| 20120006785 | Wear Resistant Vapor Deposited Coating, Method of Coating Deposition and Applications Therefor - A low friction top coat over a multilayer metal/ceramic bondcoat provides a conductive substrate, such as a rotary tool, with wear resistance and corrosion resistance. The top coat further provides low friction and anti-stickiness as well as high compressive stress. The high compressive stress provided by the top coat protects against degradation of the tool due to abrasion and torsional and cyclic fatigue. Substrate temperature is strictly controlled during the coating process to preserve the bulk properties of the substrate and the coating. The described coating process is particularly useful when applied to shape memory alloys. | 01-12-2012 |
| 20120037592 | Method for high aspect ratio patterning in a spin-on layer - A method of patterning a substrate is described. The method includes preparing a film stack on a substrate, wherein the film stack comprises a spin-on layer, and heating the spin-on layer to a cure temperature less than a thermal decomposition temperature of the spin-on layer and exceeding about 200 degrees C. to increase mechanical strength of the spin-on layer. The method further includes forming a feature pattern without pattern collapse in the spin-on layer, wherein the feature pattern is characterized by a critical dimension less than 35 nm (nanometers) and an aspect ratio relating a height of the feature pattern to the critical dimension exceeding 5:1. | 02-16-2012 |
| 20120037593 | METHOD AND SYSTEM FOR REMOVAL OF FILMS FROM PERIPHERAL PORTIONS OF A SUBSTRATE - A substrate processing apparatus includes an anti-reflection film processing block, a resist film processing block, and a resist cover film processing block. In the processing blocks, an anti-reflection film, a resist film, and a resist cover film are formed on a substrate, respectively. Additionally, a film formed at a peripheral edge of the substrate is removed. The film formed at the peripheral edge of the substrate is removed by supplying a removal liquid capable of dissolving and removing the film to the peripheral edge of the substrate during rotation. When the peripheral edge of the film is removed, the position of the substrate is corrected such that the center of the substrate coincides with the center of a rotation shaft. | 02-16-2012 |
| 20120074096 | METHODS FOR DISCRETIZED PROCESSING AND PROCESS SEQUENCE INTEGRATION OF REGIONS OF A SUBSTRATE - The present invention provides methods and systems for discretized, combinatorial processing of regions of a substrate such as for the discovery, implementation, optimization, and qualification of new materials, processes, and process sequence integration schemes used in integrated circuit fabrication. A substrate having an array of differentially processed regions thereon is processed by delivering materials to or modifying regions of the substrate. | 03-29-2012 |
| 20120080404 | BLOCK COPOLYMER AND METHOD OF FORMING PATTERNS BY USING THE SAME - A method of forming patterns includes forming a layer composed of a ketene based random copolymer on a substrate, forming a block copolymer on the ketene based random copolymer layer and patterning the ketene based random copolymer layer by removing a part of the block copolymer and a portion of the ketene based random copolymer layer. | 04-05-2012 |
| 20120085733 | SELF ALIGNED TRIPLE PATTERNING - Embodiments of the present invention pertain to methods of forming features on a substrate using a self-aligned triple patterning (SATP) process. A stack of layers is patterned near the optical resolution of a photolithography system using a high-resolution photomask. The heterogeneous stacks are selectively etched to undercut a hard mask layer beneath overlying cores. A dielectric layer, which is flowable during formation, is deposited and fills the undercut regions as well as the regions between the heterogeneous stacks. The dielectric layer is anisotropically etched and a conformal spacer is deposited on and between the cores. The spacer is anisotropically etched to leave two spacers between each core. The cores are stripped and the spacers are used together with the remaining hard mask features to pattern the substrate at triple the density of the original pattern. | 04-12-2012 |
| 20120091095 | METHOD AND APPARATUS FOR REDUCING PARTICLE DEFECTS IN PLASMA ETCH CHAMBERS - In-situ low pressure chamber cleans and gas nozzle apparatus for plasma processing systems employing in-situ deposited chamber coatings. Certain chamber clean embodiments for conductor etch applications include an NF | 04-19-2012 |
| 20120097639 | CONTACT-HOLE FORMING METHOD - A contact hole forming method according to the present invention includes a process (a) of forming an insulating film on a substrate and a process (b) of forming a contact hole in the insulating film by etching. Here, the process (a) includes steps of (a | 04-26-2012 |
| 20120103935 | METHOD FOR IMPROVING SELF-ASSEMBLED POLYMER FEATURES - A method for processing a structure. The structure is formed and includes a substrate, a substructure having a sidewall and disposed on the substrate, a first polymer structure disposed on the substrate, and a second polymer structure disposed on the substrate such that the first polymer structure is disposed between the sidewall and the second polymer structure. An aspect ratio of the first polymer structure, the second polymer structure, or both is reduced in a reducing step. One polymer structure (i.e., the first polymer structure or the second polymer structure) is selectively removed from the structure such that a remaining polymer structure (i.e., the second polymer structure or the first polymer structure) remains disposed on the external surface of the substrate after the one polymer structure has been selectively removed, wherein the aspect ratio of the remaining polymer structure was reduced in the reducing step. | 05-03-2012 |
| 20120111831 | METHOD OF DEPOSITING FILM WITH TAILORED COMFORMALITY - A method of depositing a film with a target conformality on a patterned substrate, includes: depositing a first film on a convex pattern and a bottom surface; and depositing a second film on the first film, thereby forming an integrated film having a target conformality, wherein one of the first and second films is a conformal film which is non-flowable when being deposited and has a conformality of about 80% to about 100%, and the other of the first and second films is a flowable film which is flowable when being deposited. | 05-10-2012 |
| 20120118854 | Methods for linewidth modification and apparatus implementing the same - A linear-shaped core structure of a first material is formed on an underlying material. A layer of a second material is conformally deposited over the linear-shaped core structure and exposed portions of the underlying material. The layer of the second material is etched so as to leave a filament of the second material on each sidewall of the linear-shaped core structure, and so as to remove the second material from the underlying material. The linear-shaped core structure of the first material is removed so as to leave each filament of the second material on the underlying material. Each filament of the second material provides a mask for etching the underlying material. Each filament of the second material can be selectively etched further to adjust its size, and to correspondingly adjust a size of a feature to be formed in the underlying material. | 05-17-2012 |
| 20120138569 | FABRICATION METHOD OF MINUTE PATTERN - A fabrication method of a minute pattern at least includes following steps. A first crystallizable material layer is formed on a base material. The first crystallizable material layer is patterned to form a plurality of first patterns on the base material. A distance between every two adjacent first patterns is greater than a width of each of the first patterns. A first treatment process is performed to crystallize the first patterns. A second crystallizable material layer is formed on the base material and covers the first patterns. The second crystallizable material layer is patterned to form a plurality of second patterns on the base material. Each of the second patterns is located between the first patterns adjacent thereto, respectively. | 06-07-2012 |
| 20120152895 | METHODS FOR ETCHING A SUBSTRATE - Methods for etching a substrate in a plasma etch reactor may include (a) depositing polymer on surfaces of a feature formed in substrate disposed in the etch reactor using first reactive species formed from a first process gas comprising a polymer forming gas; (b) etching the bottom surface of the feature of the substrate in the etch reactor using a third reactive species formed from a third process gas including an etching gas; and (c) bombarding a bottom surface of the feature with a second reactive species formed from a second process gas comprising one or more of an inert gas, an oxidizing gas, a reducing gas, or the polymer forming gas while at least one of depositing the polymer to remove at least some of the polymer disposed on the bottom surface or etching the bottom surface to at least one of chemically or physically damage the bottom surface. | 06-21-2012 |
| 20120187082 | SYSTEMS AND METHODS FOR MICRO-CONTACT STAMPING - Systems and methods for using stamps to print or mask materials on a substrate service. In one particular embodiment, the systems and methods include a microcontacting stamp that has a plurality of rigid posts each having a resilient pad at its distal end. Each post is fitted within an aperture located in a guide plate such that the post may move longitudinally within the guide plate. The guide plate includes a variety of apertures that typically are aligned with the wells of a microtiter plate. The apertures extend typically through the entire thickness of the guide plate. On one side of the guide plate is a resilient member that extends over one or more of the apertures thereby holding the post in place. | 07-26-2012 |
| 20120187083 | SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT APPARATUS - An inventive substrate treatment method includes a silylation step of supplying a silylation agent to a substrate, and an etching step of supplying an etching agent to the substrate after the silylation step. The method may further include a repeating step of repeating a sequence cycle including the silylation step and the etching step a plurality of times. The cycle may further include a rinsing step of supplying a rinse liquid to the substrate after the etching step. The cycle may further include a UV irradiation step of irradiating the substrate with ultraviolet radiation after the etching step. The method may further include a pre-silylation or post-silylation UV irradiation step of irradiating the substrate with the ultraviolet radiation before or after the silylation step. | 07-26-2012 |
| 20120241409 | PATTERN FORMATION METHOD - In accordance with an embodiment, a pattern formation method includes: forming, on a first substrate, a fabrication target film having first and second regions; selectively applying, onto the first region a self-assembly material of a plurality of components that are phase-separable by a thermal treatment; baking the self-assembly material to phase-separate the self-assembly material into the components; removing any one of the components to form a first pattern; applying a curable resin onto the second region of the fabrication target film; bringing a dented second substrate corresponding to an arbitrary pattern closer to and into contact with the curable resin so that the second substrate faces the curable resin; curing the curable resin; detaching the second substrate from the curable resin to form a second pattern in the curable resin; and using the first and the second patterns as masks to fabricate the fabrication target film. | 09-27-2012 |
| 20120267340 | FILM DEPOSITION METHOD AND FILM DEPOSITION APPARATUS - A disclosed film deposition method includes steps of loading plural substrates each of which includes a pattern including a concave part in a reaction chamber in the form of shelves; depositing a silicon oxide film on the plural substrates by supplying a silicon-containing gas and an oxygen-containing gas to the reaction chamber; etching the silicon oxide film deposited on the plural substrates in the step of depositing by supplying a fluorine-containing gas and an ammonia gas to the reaction chamber; and alternately repeating the step of depositing and the step of etching. | 10-25-2012 |
| 20120267341 | FILM DEPOSITION APPARATUS AND FILM DEPOSITION METHOD - A film deposition method includes steps of transferring a substrate having a pattern including a concave part into a vacuum chamber; supplying a first reaction gas to the substrate from a first reaction gas supplying part, thereby allowing the first reaction gas to be adsorbed on the substrate; supplying a second reaction gas that reacts with the first reaction gas to the substrate from a second reaction gas supplying part, thereby allowing the first reaction gas adsorbed on the substrate to react with the second reaction gas and forming a reaction product of the first and the second reaction gases on the substrate; supplying an alteration gas to the substrate through an activated gas supplying part capable of activating the alteration gas; and supplying an etching gas to the substrate chamber through the activated gas supplying part under an environment where the reaction product is not formed. | 10-25-2012 |
| 20120305525 | METHOD OF REDUCING STRIATION ON A SIDEWALL OF A RECESS - A method of reducing striation on a sidewall of a recess is provided. The method includes the steps of providing a substrate covered with a photoresist layer. Then, the photoresist layer is etched to form a patterned photoresist layer. Later, a repairing process is performed by treating the patterned photoresist layer with a repairing gas which is selected from the group consisting of CF | 12-06-2012 |
| 20120325773 | INTEGRATED PROCESS MODULATION FOR PSG GAPFILL - A method of depositing a phosphosilicate glass (PSG) film on a substrate disposed in a substrate processing chamber includes depositing a first portion of the PSG film over the substrate using a high-density plasma process. Thereafter, a portion of the first portion of the PSG film may be etched back. The etch back process may include flowing a halogen precursor to the substrate processing chamber, forming a high-density plasma from the halogen precursor, and terminating flowing the halogen precursor after the etch back. The method also includes flowing a halogen scavenger to the substrate processing chamber to react with residual halogen in the substrate processing chamber, and exposing the first portion of the PSG film to a phosphorus-containing gas to provide a substantially uniform phosphorus concentration throughout the first portion of the PSG film. | 12-27-2012 |
| 20130015158 | DRY ETCHING METHODAANM Ichimaru; TomoyoshiAACI KudamatsuAACO JPAAGP Ichimaru; Tomoyoshi Kudamatsu JPAANM Kuwabara; KenichiAACI HikariAACO JPAAGP Kuwabara; Kenichi Hikari JPAANM Saito; GoAACI HikariAACO JPAAGP Saito; Go Hikari JP - The present invention provides a dry etching method capable of readily providing rounded top edge portions, called top rounds, at trenches and vias formed by removal of a dummy material. The method of the present invention is a dry etching method for forming trenches or vias by removing a dummy material with its periphery surrounded by an interlayer oxide film, which method includes the steps of etching the dummy material to a predetermined depth, performing isotropic etching after the dummy material etching, and removing remaining part of the dummy material after the isotropic etching. | 01-17-2013 |
| 20130240478 | METHODS FOR DEPOSITING A TiN-CONTAINING LAYER ON A SUBSTRATE - Methods of depositing a tin-containing layer on a substrate are disclosed herein. In some embodiments, a method of depositing a tin-containing layer on a substrate may include flowing a tin source comprising a tin halide into a reaction volume; flowing a hydrogen plasma into the reaction volume; forming one or more tin hydrides within the reaction volume from the tin source and the hydrogen plasma; and depositing the tin-containing layer on a first surface of the substrate using the one or more tin hydrides. | 09-19-2013 |
| 20130256262 | In Situ Manufacturing Process Monitoring System of Extreme Smooth Thin Film and Method Thereof - An in situ manufacturing process monitoring system of extreme smooth thin film and method thereof, comprising a coating device for coating a thin film on at least one substrate during a coating process, an ion figuring device for processing a surface polishing process on the thin film, a control device electrically coupled to the coating device and the ion figuring device respectively for controlling the coating device and the ion figuring device processing the coating process and surface polishing process by adjusting at least one device parameter of the coating device and the ion figuring device, and an in situ monitoring device electrically coupled to the control device for in situ monitoring at least one optical parameter of the thin film. | 10-03-2013 |
| 20140027406 | METHOD FOR MANUFACTURING A NOZZLE PLATE CONTAINING MULTIPLE MICRO-ORIFICES FOR CASCADE IMPACTOR - A nozzle plate containing multiple micro-orifices for the cascade impactor and a method for manufacturing the same are disclosed. The nozzle plate is formed by a series of semiconductor processes, including lithography, etching and electroplating. The nozzle plate comprises a plate body and a plurality of micro-orifices formed on the plate body. The orifice has a diameter which gradually expands in the direction away from the bottom of the plate body to achieve a smooth inner surface, allowing particles to pass therethrough smoothly without being clogged in the nozzle plate. | 01-30-2014 |
| 20140069889 | METHOD FOR PRODUCING MOLDS - In production of a mold having a deposited film on the surface thereof as a mold release layer, a quartz substrate plasma etched employing an etching gas that includes a sedimentary gas to form a pattern of protrusions and recesses having a desired shape in a structure constituted by the quartz substrate and a mask layer, while a deposited film constituted by sediment of the sedimentary gas is formed along the pattern of protrusions and recesses. The deposited film becomes the mold release layer. Thereby, throughput of mold production is improved in the production of molds having deposited films as mold release layers on the surfaces thereof. | 03-13-2014 |
| 20140076847 | PHOTORESIST COMPOSITION AND METHOD OF FORMING A METAL PATTERN USING THE SAME - A method of forming a metal pattern is disclosed. In the method, a metal layer is formed on a base substrate. A photoresist composition is coated on the metal layer to form a coating layer. The photoresist composition includes a binder resin, a photo-sensitizer, a mercaptopropionic acid compound and a solvent. The coating layer is exposed to a light. The coating layer is partially removed to form a photoresist pattern. The metal layer is patterned by using the photoresist pattern as a mask. | 03-20-2014 |
| 20140103010 | PLASMA MEDIATED ASHING PROCESSES THAT INCLUDE FORMATION OF A PROTECTIVE LAYER BEFORE AND/OR DURING THE PLASMA MEDIATED ASHING PROCESS - A method for processing a substrate includes arranging a substrate including masked portions and unmasked portions in a process chamber; creating plasma in a process chamber; supplying a passivation gas mixture that includes nitrogen or carbon to create a plasma passivation gas mixture; exposing a substrate to the plasma passivation gas mixture to create a passivation layer on the unmasked portions of the substrate; supplying a stripping gas mixture that includes oxygen to the plasma to create a plasma stripping gas mixture; exposing the substrate to the plasma stripping gas mixture to strip at least part of the masked portions and at least part of the unmasked portions; and repeating creating the passivation layer and the stripping to remove a predetermined amount of the masked portions. | 04-17-2014 |
| 20140138350 | METHOD FOR PREPARING SAMPLES FOR IMAGING - A method and apparatus is provided for preparing samples for observation in a charged particle beam system in a manner that reduces or prevents artifacts. Material is deposited onto the sample using charged particle beam deposition just before or during the final milling, which results in an artifact-free surface. Embodiments are useful for preparing cross sections for SEM observation of samples having layers of materials of different hardnesses. Embodiments are useful for preparation of thin TEM samples. | 05-22-2014 |
| 20140138351 | Method For Making A Silicon Separation Microcolumn For Chromatography Or Gas Chromatography - A method for the production of a separation microcolumn made in silicon wafer ( | 05-22-2014 |
| 20140190934 | METHOD FOR PREPARING SAMPLES FOR IMAGING - A method and apparatus is provided for preparing samples for observation in a charged particle beam system in a manner that reduces or prevents artifacts. Material is deposited onto the sample using charged particle beam deposition just before or during the final milling, which results in an artifact-free surface. Embodiments are useful for preparing cross sections for SEM observation of samples having layers of materials of different hardnesses. Embodiments are useful for preparation of thin TEM samples. | 07-10-2014 |
| 20140263169 | METHODS FOR PROCESSING A SUBSTRATE USING MULTIPLE SUBSTRATE SUPPORT POSITIONS - In some embodiments, a method for processing a substrate in a process chamber having a substrate support configured to move in a direction perpendicular to a top surface of a cover ring of a process kit may include positioning the substrate support in a first position such that a top surface of the substrate is positioned about 3 mm above to about 10 mm below a top surface of a cover ring of a process kit disposed about the periphery of the substrate support; performing a plasma deposition process while the substrate support is in the first position; moving the substrate support to a second position such that the top surface of the substrate is disposed about 3 mm below to about 15 mm above the top surface of the cover ring; and performing a plasma etch process while the substrate support is in the second position. | 09-18-2014 |
| 20140291286 | SHOWER HEAD, PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A shower head includes a gas injection plate and a gas supply unit. The gas supply unit has a first gas supply path provided in a region along the axis and a second gas supply path provided in a region surrounding the region where the first gas supply path is provided. The first gas supply path has a first gas diffusion space connected to a first gas line of the gas supply unit, second gas lines, a second gas diffusion space, third gas lines and a third gas diffusion space which are connected in that order. The second gas supply path has a fourth gas diffusion space connected to a fourth gas line of the gas supply unit, fifth gas lines, a fifth gas diffusion space, sixth gas lines, and a sixth gas diffusion space which are connected in that order. | 10-02-2014 |
| 20140326700 | PROCESS AND DEVICE FOR FORMING A GRAPHENE LAYER - The invention concerns a method of forming a graphene layer involving: heating a support layer in a reaction chamber; and forming the graphene layer on a surface of the support layer by: a) during a first time period, introducing into the reaction chamber an organic compound gas to cause a formation of carbon atoms on the surface; b) during a second time period after the first time period, reducing a rate of introduction of the organic compound gas into the reaction chamber and introducing into the reaction chamber a further gas, wherein the further gas is a carbon etching gas; and repeating a) and b) one or more times. | 11-06-2014 |
| 20150041430 | METHOD FOR TREATING INNER SURFACE OF CHLORINE TRIFLUORIDE SUPPLY PASSAGE IN APPARATUS USING CHLORINE TRIFLUORIDE - Provided is a method for treating the inner surface of a chlorine trifluoride supply passage that enables reliable prevention of the reduction in the concentration of ClF | 02-12-2015 |
| 20150048049 | METHOD AND APPARATUS FOR FORMING A PERIODIC PATTERN USING A SELF-ASSEMBLED BLOCK COPOLYMER - A method for causing a first polymer and a second polymer of a block copolymer to be self-assembled on an underlayer film and forming a periodic pattern in a guide layer is provided. The method includes a first etching process of etching the second polymer by plasma generated from a first gas, a first film deposition process of depositing a first protective film on surfaces of the first polymer and the guide layer except for an etched portion of the second polymer by plasma generated from a second gas after the first etching process, and a second etching process of further etching the second polymer by the plasma generated from the first gas after the first film deposition process. | 02-19-2015 |
| 20150048050 | PROGRAMMABLE DEPOSITION OF THIN FILMS OF A USER-DEFINED PROFILE WITH NANOMETER SCALE ACCURACY - An inkjet-based process for programmable deposition of thin films of a user-defined profile. Drops of a pre-cursor liquid organic material are dispensed at various locations on a substrate by a multi-jet. A superstrate that has been bowed due to a backside pressure is brought down such that a first contact of the drops is made by a front side of the superstrate thereby initiating a liquid front that spreads outward merging with the drops to form a contiguous film captured between the substrate and the superstrate. A non-equilibrium transient state of the superstrate, the contiguous film and the substrate then occurs after a duration of time. The contiguous film is then cured to crosslink it into a polymer. The superstrate is then separated from the polymer thereby leaving a polymer film on the substrate. In such a manner, non-uniform films can be formed without significant material wastage in an inexpensive manner. | 02-19-2015 |
| 20150102009 | METHOD FOR PREPARING THIN SAMPLES FOR TEM IMAGING - A method and apparatus for preparing thin TEM samples in a manner that reduces or prevents bending and curtaining is realized. Embodiments of the present invention deposit material onto the face of a TEM sample during the process of preparing the sample. In some embodiments, the material can be deposited on a sample face that has already been thinned before the opposite face is thinned, which can serve to reinforce the structural integrity of the sample and refill areas that have been over-thinned due to a curtaining phenomena. In other embodiments, material can also be deposited onto the face being milled, which can serve to reduce or eliminate curtaining on the sample face. | 04-16-2015 |
| 20150136732 | METHOD AND APPARATUS FOR FILM DEPOSITION - A method and apparatus for depositing films on a substrate is described. The method includes depositing a film on a substrate with feature formed therein or thereon. The feature includes a first surface and a second surface that are at different levels. A least a portion of the deposited film is removed by exposing the substrate to an ion flux from a linear ion source. The ion flux has an ion angular spread of less than or equal to 90 degrees and greater than or equal to 15 degrees. In certain embodiments, the feature can be a nanoscale, high aspect ratio feature such as narrow, deep trench, a small diameter, deep hole, or a dual damascene structure. Such features are often found in integrated circuit devices. | 05-21-2015 |
| 20150299856 | ACCURATE FILM THICKNESS CONTROL IN GAP-FILL TECHNOLOGY - Embodiments disclosed herein generally relate to the processing of substrates, and more particularly, relate to methods for accurate control of film thickness using deposition-etch cycles. Particularly, embodiments of the present disclosure may be used in controlling film thickness during filling high aspect ratio features. | 10-22-2015 |
| 20150329969 | UNIFORMITY AND SELECTIVITY OF LOW GAS FLOW VELOCITY PROCESSES IN A CROSS FLOW EPITAXY CHAMBER WITH THE USE OF ALTERNATIVE HIGHLY REACTIVE PRECURSORS THOUGH AN ALTERNATIVE PATH - Methods for increasing layer uniformity in cross flow layer deposition are described herein. A method of depositing a layer can include delivering a deposition gas to a processing surface of a substrate using the deposition gas delivered through a first port in a first direction, depositing a layer on the processing surface of the substrate, the layer having one or more non-uniformities, and delivering a reactant gas to the layer through a second port in a second direction, the second direction being different from the first direction, the second direction and the first direction forming an azimuthal angle between them with respect to a central axis of the substrate support being up to about 145 degrees, the reactant gas reacting with the layer to diminish at least one of the one or more non-uniformities. The reactant gas can be delivered concurrent with or subsequent to the deposition gas. | 11-19-2015 |
| 20150337441 | APPARATUS FOR TREATING SUBSTRATE AND METHOD FOR TREATING SUBSTRATE - Disclosed is a substrate processing apparatus and method which facilitates to sequentially or repetitively carry out a thin film deposition process and a surface treatment process inside one process space, wherein the substrate processing apparatus comprises a process chamber for providing a process space; a substrate supporter for supporting at least one of substrates and moving the supported substrate in a predetermined direction; a chamber lid confronting the substrate supporter; and a gas distributor for spatially separating process gas for depositing a thin film on the substrate from a surface treatment gas for performing a surface treatment of the thin film, and locally distributing the process gas and the surface treatment gas on the substrate supporter, wherein the gas distributor confronting the substrate supporter is provided in the chamber lid. | 11-26-2015 |
| 20160140994 | DIRECTED SELF-ASSEMBLY OF NANOPARTICLES WITH POLYMERIC AND/OR OLIGOMERIC LIGANDS - In one embodiment, a method includes: depositing a plurality of nanoparticles on a substrate; and forming a monolayer of the nanoparticles on the substrate via self-assembly, where each of the nanoparticles comprises a nanoparticle core grafted to one or more oligomers and/or polymers, where each of the polymers and/or oligomers includes at least a first functional group configured to bind to the nanoparticles. In another embodiment, a method includes: depositing a plurality of nanoparticles on a substrate; and forming a monolayer of the nanoparticles on the substrate via self-assembly, where the nanoparticles each comprise a nanoparticle core grafted to one or more oligomers and/or polymers, each of the polymers and/or oligomers including a first terminal functional group configured to bind to the nanoparticles, and an optional second terminal functional group configured to bind to the substrate, where the substrate comprises guiding features configured to direct the self-assembly of the nanoparticles. | 05-19-2016 |
| 20160203997 | SUBSTRATE PROCESSING METHOD | 07-14-2016 |
