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Copper

Subclass of:

205 - Electrolysis: processes, compositions used therein, and methods of preparing the compositions

205080000 - ELECTROLYTIC COATING (PROCESS, COMPOSITION AND METHOD OF PREPARING COMPOSITION)

205261000 - Depositing predominantly single metal coating

Patent class list (only not empty are listed)

Deeper subclasses:

Class / Patent application numberDescriptionNumber of patent applications / Date published
205291000 Copper 52
20090038951Copper plating bath formulation - To provide a copper plating solution composition that precipitates copper plated membranes that are both uniform and smooth and which has good external appearance even if the copper plated membranes that are formed are relatively thin. The copper plating solution composition contains chlorine ions and bromide ions in specific volumes.02-12-2009
20090050488ELECTROLYTIC CATHODE ASSEMBLIES AND METHODS OF MANUFACTURING AND USING SAME - The present invention relates to electrolytic cathode assemblies typically used in the refining or winning of metals and to methods of manufacturing and using same. The cathode assembly comprises an electrically conductive hanger bar and a deposition plate attached along an upper end to the hanger bar to define a joint. The cathode assembly further comprises a protective covering having lateral edges and surrounding the hanger bar and a portion of the upper end of the deposition plate so as to substantially enclose the joint and to leave end portions of the hanger bar exposed outside of the lateral edges of the protective covering. Each end of the protective covering includes a corrosion resistant material positioned to form a substantially continuous seal between the protective covering and the hanger bar, thereby to at least hinder fluid flow into the protective covering. Methods of manufacturing and using the electrolytic cathode assemblies are also described.02-26-2009
20100219081COPPER ELECTROPLATING BATH - A copper electroplating bath useful in filling non-through holes formed on a substrate which contains a water-soluble copper salt, sulfuric acid, and chloride ions and further contains a brightener, a carrier, and a leveler as additives, wherein the leveler contains at least one water-soluble polymer containing quaternary nitrogen, tertiary nitrogen, or both which are cationizable in a solution. In the copper electroplating bath, the filling power for non-through holes formed on a substrate can be easily controlled so as to fit to the size of the holes only by changing the quaternary nitrogen to tertiary nitrogen ratio of the water-soluble polymer to be used as the leveler, which enables copper electroplating of non-through holes of various sizes with a good fit to the sizes.09-02-2010
20120199491METHODS FOR ELECTROPLATING COPPER - Embodiments of the invention are directed to methods of electroplating copper onto at least one surface of a substrate in which more uniform electrical double layers are formed adjacent to the at least one surface being electroplated (i.e., the cathode) and an anode of an electrochemical cell, respectively. In one embodiment, the electroplated copper may be substantially-free of dendrites, exhibit a high-degree of (111) crystallographic texture, and/or be electroplated at a high-deposition rate (e.g., about 6 μm per minute or more) by electroplating the copper under conditions in which a ratio of a cathode current density at the at least one surface to an anode current density at an anode is at least about 20. In another embodiment, a porous anodic film may be formed on a consumable copper anode using a long conditioning process that promotes forming a more uniform electrical double layer adjacent to the anode.08-09-2012
20140151238COPPER PLATING SOLUTION - The present invention relates to a copper plating solution for relieving the deposit stress of an electroplated copper film. In the copper electroplating solution of the present invention, glycerin propoxylate ethoxylate is used as a carrier for relieving the deposit stress, and phenylurea is added as a deposit stress relieving additive. The copper electroplating solution of the present invention includes the phenylurea by from about 0.02 to about 0.08 g/l.06-05-2014
20150096895METHOD AND APPARATUS FOR ELECTROLYTICALLY DEPOSITING A DEPOSITION METAL ON A WORKPIECE - For improving the current transfer during the electrolytic metallization of workpieces, a method is proposed: (a) providing a metal depositing apparatus 04-09-2015
20160114870Surface Anti-Fouling Structure, Composition, and Method - An article surface anti-fouling structure, composition, and method includes a surface structure for encapsulating an article from an external environment, the structure having anti fouling properties protecting the article from the external environment. Also, a composition for applying to the surface of the article for the anti-fouling surface treatment of the article, the composition including copper sulfate, sulfuric acid, hydrochloric acid, umicore 836 brightener 1, umicore 836 leveler 1, and distilled water. In addition, a method for applying the composition to the surface includes steps of providing the composition, a container, an article, and an electrical power source, then creating an electrolyte bath from the composition. Additional steps include setting a bath temperature, immersing the article into the bath, charging the bath and the article for a galvanic deposition of the composition onto the article, controlling the galvanic deposition for a selected time, and removing the article from the bath.04-28-2016
205292000 Utilizing specified anode 6
20080210568Electrolytic Copper Plating Method, Phosphorous Copper Anode for Electrolytic Copper Plating, and Semiconductor Wafer having Low Particle Adhesion Plated with said Method and Anode - An electrolytic copper plating method characterized in employing a phosphorous copper anode having a crystal grain size of 1,500 μm (or more) to 20,000 μm in an electrolytic copper plating method employing a phosphorous copper anode. Upon performing electrolytic copper plating, an object is to provide an electrolytic copper plating method of a semiconductor wafer for preventing the adhesion of particles, which arise at the anode side in the plating bath, to the plating object such as a semiconductor wafer, a phosphorous copper anode for electrolytic copper plating, and a semiconductor wafer having low particle adhesion plated with such method and anode.09-04-2008
20090183993Electroplating Composition for Coating a Substrate Surface with a Metal - The object of the present invention is an electroplating composition intended in particular for coating a copper-diffusion barrier layer in the fabrication of interconnects for integrated circuits.07-23-2009
20130075272HIGHLY PURE COPPER ANODE FOR ELECTROLYTIC COPPER PLATING, METHOD FOR MANUFACTURING SAME, AND ELECTROLYTIC COPPER PLATING METHOD - Provided are a highly pure copper anode for electrolytic copper plating, a method for manufacturing the same, and an electrolytic copper plating method using the highly pure copper anode. The highly pure copper anode obtains a crystal grain boundary structure having a special grain boundary ratio Lσ03-28-2013
20140332396CONSOLIDATED AMORPHOUS CARBON MATERIALS, THEIR MANUFACTURE AND USE - A carbon based material produced from the consolidation of amorphous carbon by elevated temperature compression. The material having unique chemical and physical characteristics that lend themselves to a broad range of applications such as in electrical, electrochemical and structural fields.11-13-2014
20150034491ANODE AND METHOD OF OPERATING AN ELECTROLYSIS CELL - The invention relates to an anode for electrowinning process in an electrolytic cell, and the method of operation thereof, having cell walls and a cell bottom for holding an electrolyte and electrolyte feeding means, which anode comprises a hanger bar for supporting the anode, a conducting rod for distributing the current, an anode body having at least partly conductive structure. The anode body allows electrolyte penetration and is at least partly covered by electrocatalytic coating, when in connection with the anode there is arranged a non-conductive element, which is restricted to the conductive structure of the anode body, at least from its one side, and which non-conductive element is arranged at a distance A from the electrolyte surface level, when the non-conductive element provides a means for attaching the anode to the cell.02-05-2015
20150308009PHOSPHOROUS-CONTAINING COPPER ANODE FOR ELECTROLYTIC COPPER PLATING, METHOD FOR MANUFACTURING SAME, AND ELECTROLYTIC COPPER PLATING METHOD - Provided are a phosphorous-containing copper anode for electrolytic copper plating, a method for manufacturing the same, and an electrolytic copper plating method using the phosphorous-containing copper anode. The phosphorous-containing copper anode obtains a crystal grain boundary structure having a special grain boundary ratio Lσ10-29-2015
205295000 Utilizing alkaline bath 1
20110180415CYANIDE FREE ELECTROLYTE COMPOSITION FOR THE GALVANIC DEPOSITION OF A COPPER LAYER - A cyanide-free electrolyte composition for the galvanic deposition of a copper layer on substrate surfaces and a method for the deposition of such layers. The electrolyte composition comprises at least copper(II) ions, a hydantoin and/or hydantoin derivative, a di- and/or tricarboxylic acid or salts thereof, and a metalate of an element of the group consisting of molybdenum, tungsten and vanadium and/or a cerium compound.07-28-2011
205296000 Utilizing organic compound-containing bath 38
20080210569Polyvinylammonium Compound, Method of Manufacturing Same, Acidic Solution Containing Said Compound and Method of Electrolytically Depositing a Copper Deposit - The invention relates to a polyvinylammonium compound, to a method of manufacturing said compound, to an aqueous acidic solution containing at least said Polyvinylammonium compound for electrolytically depositing a copper deposit as well as to a method of electrolytically depositing a copper deposit using said aqueous acidic solution, said polyinylammonium compound corresponding to the general chemical formula (1): as well as to polyvinylammonium compounds of the general chemical formula (1), wherein one of the monomer units or both having indices l and m are present in the neutral form.09-04-2008
20090038952ELECTROLYTIC COPPER PLATING PROCESS - Disclosed herein is an electrolytic copper plating process for electroplating copper on workpieces in a copper sulfate plating bath filled in a plating tank and containing an organic additive while using a soluble anode or insoluble anode as an anode and the workpieces as cathodes, including the steps of, setting a bath current density at not higher than 5 A/L, immersing metal copper in a region of the copper sulfate plating bath, the region being apart from a region between the anode and the cathode and also from regions adjacent the anode and cathode, respectively, such that a neighborhood of the thus-immersed metal copper can be used as an oxidative decomposition region, setting an immersed area of the metal copper at not smaller than 0.001 dm02-12-2009
20090166213PRODUCTION METHOD OF ELECTRO-DEPOSITED COPPER FOIL, ELECTRO-DEPOSITED COPPER FOIL OBTAINED BY THE PRODUCTION METHOD, SURFACE-TREATED COPPER FOIL OBTAINED BY USING THE ELECTRO-DEPOSITED COPPER FOIL AND COPPER-CLAD LAMINATE OBTAINED BY USING THE ELECTRO-DEPOSITED COPPER FOIL OR THE SURFACE-TREATED COPPER FOIL - An object of the present invention is to provide a production method which enables efficient production of an electro-deposited copper foil with further lower profile when compared to the low-profile electro-deposited copper foils which have been supplied to the market and is excellent in mechanical strength. For the purpose of achieving the object, a production method adopted obtains the electro-deposited copper foil by electrolyzing a sulfuric acid based copper electrolytic solution which contains a quaternary ammonium salt polymer having cyclic structure and chlorine, wherein for the quaternary ammonium salt polymer contained in the sulfuric acid based copper electrolytic solution, a DDAC dimer or higher polymer is used. For the quaternary ammonium salt polymer, a diallyl dimethyl ammonium chloride polymer having a number average molecular weight of 300 to 10000 is preferably used. The sulfuric acid based copper electrolytic solution preferably contains bis(3-sulfopropyl) disulfide or 3-mercapto-1-propanesulfonic acid that is a compound having a mercapto group.07-02-2009
20100243467SURFACE-ACTIVE CONDITIONAL INHIBITORS FOR THE ELECTROPLATING OF COPPER ON A SURFACE - Electrolytes for the electroplating of copper comprising, as inhibitor, a poly(alkylene-biguanide) salt. The inhibition developed by poly(alkylene-biguanide) salts is conditioned by the concentration of an accelerator on the surface of the copper. The surfactancy of poly(alkylene-biguanide) salts enables them to be instantly transferred from the electrolyte/air interface to the electrolyte/copper interface during contact between the cathode and the electrolyte. The electrolytes according to the invention are suitable for obtaining smooth and bright electroplated coatings and for depositing copper on surfaces having submicron-scale concavities useful in microelectronics.09-30-2010
20110056840ELECTROLYTIC PLATING EQUIPMENT AND ELECTROLYTIC PLATING METHOD - An electrolytic plating equipment includes: a plating tank for holding plating solution; and a separate tank apart from the plating tank, for holding the plating solution circulating between the plating tank and the separate tank. The separate tank contains a first space and a second space located downstream from the first space. The plating solution in the first space in an amount exceeding a specific height flows from the first space into the second space, and the plating solution falls through air in the second space.03-10-2011
20120205250ELECTROLYTIC COPPER PLATING SOLUTION COMPOSITION - Disclosed is an electrolytic copper plating solution composition, which includes a copper salt, an acidic solution, and a PEG-PPG-PEG copolymer, and in which the PEG-PPG-PEG copolymer which is a non-ionic surfactant is added, thus decreasing the surface tension of the electrolytic copper plating solution, thereby enhancing plating wettability.08-16-2012
20130334057HIGH-PURITY ELECTROLYTIC COPPER AND ELECTROLYTIC REFINING METHOD THEREOF - This electrolytic refining method of high-purity electrolytic copper includes: performing electrolysis by using an electrolyte which includes a copper nitrate solution, a cathode made of stainless steel, and an anode made of copper so as to deposit high-purity electrolytic copper on the cathode. 12-19-2013
20130341199ELECTRO COPPER PLATING ADDITIVE AND ELECTRO COPPER PLATING BATH - Provided are an additive for electro copper plating and an electro copper plating bath containing the additive, wherein the additive forms a plating film uniformly in a range of from a low current density portion to a high current density portion and thereby gives good glossiness, and is not consumed at the time of non-usage thereof. In the present invention, an additive for electro copper plating including a block polymer compound expressed by the following general formula (1) is added to an electro copper plating bath. (Here, in the formula, R represents an alkyl group or an alkenyl group having a linear-chain or branched-chain structure and having a carbon number of 1 to 15, m is an integer of from 1 to 30, and n is an integer of from 1 to 40.)12-26-2013
20140097092COMPOSITION FOR METAL ELECTROPLATING COMPRISING AN ADDITIVE FOR BOTTOM-UP FILLING OF THOUGH SILICON VIAS AND INTERCONNECT FEATURES - A composition comprising a source of metal ions and at least one polyaminoamide, said polyaminoamide comprising amide and amine functional groups in the polymeric backbone and aromatic moieties attached to or located within said polymeric backbone.04-10-2014
20140238868ELECTROPLATING BATH - Compositions suitable for the electrodeposition of copper on substrates, such as electronic device substrates, are provided. Methods of depositing copper layers on surfaces and filling apertures with copper are also provided.08-28-2014
20150136611REACTION PRODUCTS OF GUANIDINE COMPOUNDS OR SALTS THEREOF, POLYEPOXIDES AND POLYHALOGENS - Reaction products of guanidine compounds or salts thereof, polyepoxide compounds and polyhalogen compounds may be used as levelers in metal electroplating baths, such as copper electroplating baths, to provide good throwing power. Such reaction products may plate with good surface properties of the metal deposits and good physical reliability.05-21-2015
20160053394ADDITIVE FOR COPPER ELECTROPLATING BATH, COPPER ELECTROPLATING BATH CONTAINING SAID ADDITIVE, AND COPPER ELECTROPLATING METHOD USING SAID COPPER ELECTROPLATING BATH - The present invention relates to an additive for a copper electroplating bath, including at least one polymer compound selected from polymer compounds each represented by the following general formula (1) or the following general formula (2), each of the polymer compounds having a weight-average molecular weight of from 20,000 to 10,000,000; a copper electroplating bath including the additive; and a copper electroplating method using the copper electroplating bath.02-25-2016
20160186346REACTION PRODUCTS OF AMINO ACIDS AND EPOXIES - Reaction products of one or more amino acids and one or more epoxies are included in copper and copper alloy electroplating baths to provide good throwing power. Such reaction products may plate copper and copper alloys with good surface properties and good physical reliability.06-30-2016
20160186347AMINO SULFONIC ACID BASED POLYMERS FOR COPPER ELECTROPLATING - Amino sulfonic acid based polymers are reaction products of amino sulfonic acids, an amine, polyepoxide compounds and epihalohydrin. The polymers may be used as levelers in copper electroplating baths, to provide good throwing power. Such reaction products may plate copper or copper alloys with good surface properties and good physical reliability.06-30-2016
205297000 Nitrogen-heterocyclic compound-containing 24
20100038256ELECTROPLATING METHOD FOR COATING A SUBSTRATE SURFACE WITH A METAL - The object of the present invention is a method of coating a surface of a substrate with copper by electroplating.02-18-2010
20110220512Plating bath and method - Copper plating baths containing a leveling agent that is a reaction product of a certain imidazole with a certain epoxide-containing compound that deposit copper on the surface of a conductive layer are provided. Such plating baths deposit a copper layer that is substantially planar on a substrate surface across a range of electrolyte concentrations. Methods of depositing copper layers using such copper plating baths are also disclosed.09-15-2011
20110220513Plating bath and method - Copper plating baths containing a leveling agent that is a reaction product of a certain benzimidazole with a certain epoxide-containing compound that deposit copper on the surface of a conductive layer are provided. Such plating baths deposit a copper layer that is substantially planar on a substrate surface across a range of electrolyte concentrations. Methods of depositing copper layers using such copper plating baths are also disclosed.09-15-2011
20110220514Plating bath and method - Copper plating baths containing a leveling agent that is a reaction product of a certain imidazole with a certain epoxide-containing compound that deposit copper on the surface of a conductive layer are provided. Such plating baths deposit a copper layer that is substantially planar on a substrate surface across a range of electrolyte concentrations. Methods of depositing copper layers using such copper plating baths are also disclosed.09-15-2011
20110290659COMPOSITION FOR METAL ELECTROPLATING COMPRISING LEVELING AGENT - A composition comprising a source of metal ions and at least one leveling agent obtainable by condensing at least one trialkanolamine of the general formula N(R12-01-2011
20110290660PLATING BATH AND METHOD - Copper plating baths containing a leveling agent that is a reaction product of a certain imidazole with a certain epoxide-containing compound that deposit copper on the surface of a conductive layer are provided. Such plating baths deposit a copper layer that is substantially planar on a substrate surface across a range of electrolyte concentrations. Methods of depositing copper layers using such copper plating baths are also disclosed.12-01-2011
20130048505PLATING BATH AND METHOD - Copper plating baths containing a leveling agent that is a reaction product of one or more of certain cyclodiaza-compounds with one or more epoxide-containing compounds that deposit copper on the surface of a conductive layer are provided. Such plating baths deposit a copper layer that is substantially planar on a substrate surface across a range of electrolyte concentrations. Methods of depositing copper layers using such copper plating baths are also disclosed.02-28-2013
20130098770PLATING BATH AND METHOD - Copper plating baths containing a leveling agent that is a reaction product of one or more of certain pyridine compounds with one or more epoxide-containing compounds, that deposit copper on the surface of a conductive layer are provided. Such plating baths deposit a copper layer that is substantially planar on a substrate surface across a range of electrolyte concentrations. Methods of depositing copper layers using such copper plating baths are also disclosed.04-25-2013
20140027297PLATING BATH AND METHOD - This invention relates to copper plating baths containing a leveling agent that is a reaction product of one or more of certain cyclodiaza-compounds with one or more epoxide-containing compounds useful to deposit copper on the surface of a conductive layer. Such plating baths deposit a copper layer that is substantially planar on a substrate surface across a range of electrolyte concentrations. This invention also relates to methods of depositing copper layers using such copper plating baths.01-30-2014
20140027298PLATING BATH AND METHOD - This invention relates to copper plating baths containing a leveling agent that is a reaction product of one or more of certain cyclodiaza-compounds with one or more epoxide-containing compounds useful to deposit copper on the surface of a conductive layer. Such plating baths deposit a copper layer that is substantially planar on a substrate surface across a range of electrolyte concentrations. This invention also relates to methods of depositing copper layers using such copper plating baths.01-30-2014
20140102909COPPER ELECTRODEPOSITION IN MICROELECTRONICS - A method and composition for electroplating Cu onto a substrate in the manufacture of a microelectronic device involving and electrolytic solution containing a source of Cu ions and a quaternized pyridinium salt compound for leveling.04-17-2014
20140102910METHOD FOR COPPER PLATING - A method for copper plating in a plating bath wherein the substrate is brought into contact with a leveller additive comprising a heterocyclic core having a thiol group and an amino group attached to said heterocyclic core by a spacer is disclosed. Said method is particularly suitable for filling recessed structures in the manufacture of printed circuit boards, IC substrates and semiconducting substrates.04-17-2014
20160076160LEVELERS FOR COPPER DEPOSITION IN MICROELECTRONICS - A composition for electrolytic plating in microelectronics which contains a leveler that comprises the reaction product of an aliphatic di(t-amine) with an alkylating agent. Electrolytic plating methods employing the leveler, a method for making the leveler, and the leveler compound.03-17-2016
20160143152REACTION PRODUCTS OF HETEROCYCLIC NITROGEN COMPOUNDS POLYEPOXIDES AND POLYHALOGENS - Reaction products of heterocyclic nitrogen compounds, polyepoxide compounds and polyhalogen compounds may be used as levelers in metal electroplating baths, such as copper electroplating baths, to provide good throwing power. Such reaction products may plate metal with good surface properties and good physical reliability.05-19-2016
20160201209REACTION PRODUCTS OF GUANIDINE COMPOUNDS OR SALTS THEREOF, POLYEPOXIDES AND POLYHALOGENS07-14-2016
205298000 And organic sulfur compound-containing 9
20080264798Copper Plating Bath and Plating Method - An acid copper plating solution and plating method are disclosed. The acid copper plating solution comprises copper ions, an organic acid or an inorganic acid, chloride ions, high molecular weight surfactant which controls the electrodeposition reaction, and a sulfur-containing saturated organic compound which promotes the electrocoating rate, wherein the high molecular weight surfactant comprises two or more types with different hydrophobicities. The plating method is a method for forming a plating film on a conductor layer, which is formed on at least a part of a structural object having a concave-convex pattern on a semiconductor substrate, and comprises providing a cathode potential to the conductor layer and supplying a plating solution which electrically connects an anode with the conductor layer, wherein the plating solution contains 25-75 g/l of copper ion and 0.4 mol/l of an organic acid or inorganic acid and an electric resistor is installed between the conductor layer and the anode. Also disclosed is a plating method for forming a wiring circuit on an electronic circuit substrate having fine holes and trenches, comprising forming a plating film on a conductor layer, which is formed on at least a part of the substrate, and filling the holes and trenches with copper, wherein the plating film is formed by using an acid copper plating solution containing copper ions, organic or inorganic acid, chloride ions, sulfur-containing saturated organic compound, and high molecular weight surfactant controlling electrocoating concentration of 500 ppm or more.10-30-2008
20080314757Acid copper electroplating bath composition - An aqueous acidic copper electroplating composition containing an improved additive system for use at elevated temperatures. The improved additive system comprises (a) a suppressor comprising at least one high molecular weight polymer; (b) a brightener comprising at least one divalent sulfur compound; and (c) a leveler comprising a heterocyclic nitrogen compound. The improved electroplating composition is usable for plating through holes in printed circuit boards.12-25-2008
20090139873Leveler compounds - Plating baths containing a mixture of leveling agents, where the mixture includes a first level agent having a first diffusion coefficient and a second leveling agent having a second diffusion coefficient, are provided. Such plating baths deposit a metal layer, particularly a copper layer, that is substantially planar across a range of electrolyte concentrations. Methods of depositing metal layers using such plating baths are also disclosed. These baths and methods are useful for providing a planar layer of copper on a substrate having small apertures, such as an electronic device.06-04-2009
20110089044COPPER ELECTROLYTIC PLATING BATH AND COPPER ELECTROLYTIC PLATING METHOD - Disclosed herein is a copper electrolytic plating bath including copper sulfate used in an amount of 50 to 250 g/liter calculated as copper sulfate pentahydrate, 20 to 200 g/liter of sulfuric acid, and 20 to 150 mg/liter of a chloride ion, and a sulfur atom-containing organic compound and a nitrogen atom-containing organic compound serving as organic additives. The nitrogen atom-containing organic compound includes a nitrogen atom-containing polymer compound obtained by a two-stage reaction including reacting one mole of morpholine with two moles of epichlorohydrin in an acidic aqueous solution to obtain a reaction product and further reacting one to two moles, relative to one mole of the morpholine, of imidazole with the reaction product.04-21-2011
20120043218COPPER ELECTRODEPOSITION IN MICROELECTRONICS - A method and composition for electroplating Cu onto a substrate in the manufacture of a microelectronic device involving and electrolytic solution containing a source of Cu ions and a substituted pyridyl polymer compound for leveling.02-23-2012
20120073981Method of Producing Polymeric Phenazonium Compounds - A process of making a polymeric phenazonium compound having the general formula:03-29-2012
20130043137NOVEL COMPOUND AND USE THEREOF - Provided is a copper plating technique that enables the filling of high aspect-ratio via-holes and through-holes in semiconductor substrates such as silicon substrates, organic material substrates or ceramic substrates. The disclosed technique involves a tertiary amine compound, which is obtained by reacting a heterocyclic compound with the epoxy group of a glycidyl ether group of a compound that has three or more glycidyl ether groups, and a quaternary amine compound thereof, as well as a copper plating additive, a copper plating bath, and a copper plating method employing the compounds.02-21-2013
20140183052COPPER ELECTROPLATING SOLUTION AND METHOD OF COPPER ELECTROPLATING - A copper electroplating solution which contains compounds with the structure —X—S—Y— wherein X and Y are, independently atoms selected from a group consisting of hydrogen, carbon, sulfur, nitrogen, and oxygen, and X and Y can be the same only if they are carbon atoms and ninhydrin. By using this copper electroplating solution, it is possible to form good filled vias without worsening the appearance of the plating.07-03-2014
20140197038COPPER ELECTROPLATING SOLUTION AND COPPER ELECTROPLATING APPARATUS - An electroplating solution includes an aqueous electrolyte solution including water soluble copper salts, sulfide ions and chloride ions, an accelerator including an organic material having sulfur (S), the accelerator accelerating copper (Cu) reduction, a suppressor including a polyether compound, the suppressor selectively suppressing the copper reduction, and a leveler including a water soluble polymer having nitrogen that is dissolved into positive ions in the aqueous electrolyte solution.07-17-2014
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