| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 205096000 | Controlling current distribution within bath | 43 |
| 20080223724 | APPARATUSES FOR ELECTROCHEMICAL DEPOSITION, CONDUCTIVE LAYER, AND FABRICATION METHODS THEREOF - Electrochemical plating (ECP) apparatuses with auxiliary cathodes to create uniform electric flux density. An ECP apparatus for electrochemical deposition includes an electrochemical cell with an electrolyte bath for electrochemically depositing a metal on a substrate. A main cathode and an anode are disposed in the electrolyte bath to provide a main electrical field. A substrate holder assembly holds a semiconductor wafer connecting the cathode. An auxiliary cathode is disposed outside the electrochemical cell to provide an auxiliary electrical field such that a flux line density at the center region of the substrate holder assembly substantially equals that at the circumference of the substrate holder assembly. | 09-18-2008 |
| 20080251385 | PLATING APPARATUS - A plating method and apparatus for a substrate fills a metal, e.g., copper, into a fine interconnection pattern formed in a semiconductor substrate. The apparatus has a substrate holding portion | 10-16-2008 |
| 20090065364 | Plating method, light-transmitting electrically-conductive film and light-transmitting electromagnetic wave shield film - A plating method comprising: continuously electroplating a surface of a film having a surface resistivity of from 1 to 1,000 Ω/D in a plurality of times, wherein the plurality of times are equally divided into a former half stage and a latter half stage, and wherein an average plating time of the former half stage of the electroplating step is shorter than an average plating time of the latter half stage of the electroplating step or an average plating voltage at the latter half stage of the electroplating step is 60% or less of an average plating voltage at the former half stage of the electroplating step. | 03-12-2009 |
| 20090159451 | Variable property electrodepositing of metallic structures - Variable property deposit, at least partially of fine-grained metallic material, optionally containing solid particulates dispersed therein, is disclosed. The electrodeposition conditions in a single plating cell are suitably adjusted to once or repeatedly vary at least one property in the deposit direction. In one embodiment denoted multidimension grading, property variation along the length and/or width of the deposit is also provided. Variable property metallic material deposits containing at least in part a fine-grained microstructure and variable property in the deposit direction and optionally multidimensionally, provide superior overall mechanical properties compared to monolithic fine-grained (average grain size: 2 nm-5 micron), entirely coarse-grained (average grain size: >20 micron) or entirely amorphous metallic material deposits. | 06-25-2009 |
| 20090188803 | Method and Device for Processing at Least Two Workpieces by Means of Electrochemical Treatment - The invention relates to a method for processing at least two workpieces by means of electrochemical treatment. During the method, the workpieces are provided as working electrodes in an electrolytic treatment solution inside of which a counter-electrode arrangement is assigned to each workpiece. One workpiece and the assigned counter-electrode arrangement form an electrolytic processing element. The electrolytic processing elements are connected in series. | 07-30-2009 |
| 20090218231 | Plating apparatus - A plating apparatus according to the present invention has a plating tank for holding a plating solution, an anode disposed so as to be immersed in the plating solution in the plating tank, a regulation plate disposed between the anode and a plating workpiece disposed so as to face the anode, and a plating power supply for supply a current between the anode and the plating workpiece to carry out plating. The regulation plate is disposed so as to separate the plating solution held in the plating tank into a plating solution on the anode side and a plating solution on the plating workpiece side, and a through-hole group having a large number of through-holes is formed in the regulation plate. | 09-03-2009 |
| 20090301889 | Electrolytic Method For Filling Holes and Cavities With Metals - Disclosed is an electroplating method for filling cavities, through holes, blind holes, or micro blind holes of a work piece with metals. According to said method, the work piece containing cavities, through holes, blind holes, or micro blind holes is brought in contact with a metal deposition electrolyte, and a voltage is applied between the work piece and at least one anode such that a current flow is fed to the work piece. The invention method is characterized in that the electrolyte encompasses a redox system. | 12-10-2009 |
| 20100006445 | Electroplating method and apparatus - An apparatus and method is disclosed for simultaneously electroplating at least two parts in a series electrical configuration in an electroplating system using a shared electrolyte with excellent consistency in thickness profiles, coating weights and coating microstructure. Parts in high volume and at low capital and operating cost are produced as coatings or in free-standing form. | 01-14-2010 |
| 20100032303 | Method and apparatus for electroplating including remotely positioned second cathode - An apparatus for electroplating a layer of metal on the surface of a wafer includes a second cathode located remotely with respect to the wafer. The remotely positioned second cathode allows modulation of current density at the wafer surface during an entire electroplating process. The second cathode diverts a portion of current flow from the near-edge region of the wafer and improves the uniformity of plated layers. The remote position of second cathode allows the insulating shields disposed in the plating bath to shape the current profile experienced by the wafer, and therefore act as a “virtual second cathode”. The second cathode may be positioned outside of the plating vessel and separated from it by a membrane. | 02-11-2010 |
| 20100126870 | CONTROLLED ELECTRODEPOSITION OF NANOPARTICLES - Deposition of nanoparticles onto carbon surfaces is described. Metal and/or metal oxide ions are deposited on a carbon surface by electrodeposition, such as by immersing a carbon and an anode in a salt bath, and applying a number of electrical pulses having a defined pulse width. The size, coverage density, and metallic composition of the nanoparticles may be affected by the pulse width of the electrical pulses, the number of electrical pulses, and the chemical composition of the salt bath, respectively. The carbon may be anodized before electrodeposition. If the carbon is a carbon precursor, after electrodeposition, the carbon precursor is carbonized to form a carbon. After electrodeposition, the carbon may be activated to form an activated carbon. The nanoparticles may serve as catalysts for activation rugosity of mesoporous carbons. The catalytically activated carbon materials may be used in all manner of devices that contain carbon materials. | 05-27-2010 |
| 20100140098 | SELENIUM CONTAINING ELECTRODEPOSITION SOLUTION AND METHODS - The present inventions relate to selenium containing electrodeposition solutions used to manufacture solar cell absorber layers. In one aspect is described an electrodeposition solution to electrodeposit a Group IB-Group VIA thin film that includes a a solvent; a Group IB material source; a Group VIA material source; and at least one complexing that forms a complex ion of the Group IB material. Also described are methods of electroplating using electrodeposition solutions. | 06-10-2010 |
| 20100140099 | METHOD AND APPARATUS FOR ELECTROCHEMICAL PLATING SEMICONDUCTOR WAFERS - A method of electroplating conductive material on semiconductor wafers controls undesirable surface defects by reducing the electroplating current as the wafer is being initially immersed in a plating bath. Further defect reduction and improved bottom up plating of vias is achieved by applying a static charge on the wafer before it is immersed in the bath, in order to enhance bath accelerators used to control the plating rate. The static charge is applied to the wafer using a supplemental electrode disposed outside the plating bath. | 06-10-2010 |
| 20100200411 | METHOD AND APPARATUS FOR THE SOLUTION DEPOSITION OF OXIDE - A metal and oxygen material such as a transparent electrically conductive oxide material is electro deposited onto a substrate in a solution deposition process. Process parameters are controlled so as to result in the deposition of a high quality layer of material which is suitable for use in a back reflector structure of a high efficiency photovoltaic device The deposition may be carried out in conjunction with a masking member which operates to restrict the deposition of the metal and oxygen material to specific portions of the substrate. In particular instances the deposition may be implemented in a continuous, roll-to-roll process. Further disclosed are semiconductor devices and components of semiconductor devices made by the present process, as well as apparatus for carrying out the process. | 08-12-2010 |
| 20100307924 | POWER CONTROL DEVICE OF A POWER NETWORK OF AN ELECTROCHEMICAL COATING FACILITY - A power control device ( | 12-09-2010 |
| 20110155578 | PLATING PROCESS AND MANUFACTURING PROCESS FOR SEMICONDUCTOR DEVICE THEREBY - An objective of this invention is to reliably form a plating film. The following two steps are sequentially conducted: step | 06-30-2011 |
| 20110272284 | METHOD FOR THE POST-TREATMENT OF METAL LAYERS - A process for treating the surface of a metal substrate comprising a constituent metal selected from the group consisting of Cr, Cu, Mn, Mo, Ag, Au, Pt, Pd, Rh, Pb, Sn, Ni, Zn, in some cases Fe, and alloys of these metals. An anodic potential is applied to the metal surface in an electrolytic circuit comprising the metal surface, a cathode, and an electrolytic solution that is in contact with the metal surface and in electrically conductive communication with the cathode. The electrolytic solution may contain an electrolyte comprising anions of phosphate, phosphonate, phosphite, phosphinate, nitrate, borate, silicate, molybdate, tungstate, carboxylate, oxalate and combinations thereof. The anion may comprise a polymer having a pendent moiety selected from the group consisting of phosphate, phosphonate, phosphite, phosphinate, sulfate, sulfonate, carboxylate and combinations thereof. The potential applied to the circuit is such that the substrate is anodically oxidized and reacts with the anion to form a composition that imparts an enhanced property to the metal surface. Preferably, the pH of the electrolytic solution is less than about 6.0, the potential applied is between about 0.5 and about 20 volts, and the current density is between about 0.01 and 2 amps/dm | 11-10-2011 |
| 20110284386 | THROUGH SILICON VIA FILLING USING AN ELECTROLYTE WITH A DUAL STATE INHIBITOR - A method for electrofilling large, high aspect ratio recessed features with copper without depositing substantial amounts of copper in the field region is provided. The method allows completely filling recessed features having aspect ratios of at least about 5:1 such as at least about 10:1, and widths of at least about 1 μm in a substantially void-free manner without depositing more than 5% of copper in the field region (relative to the thickness deposited in the recessed feature). The method involves contacting the substrate having one or more large, high aspect ratio recessed features (such as a TSVs) with an electrolyte comprising copper ions and an organic dual state inhibitor (DSI) configured for inhibiting copper deposition in the field region, and electrodepositing copper under potential-controlled conditions, where the potential is controlled not exceed the critical potential of the DSI. | 11-24-2011 |
| 20120152749 | ELECTROPLATING METHOD - An electroplating method can securely and efficiently fill a plated metal into deep high-aspect ratio vias in a bottom-up manner without producing defects in the plated metal. The electroplating method includes: immersing a substrate, having vias formed in a surface, and an anode in a plating solution in a plating tank, the anode being disposed opposite the surface of the substrate; and intermittently passing a plating current at a constant current value between the substrate and the anode in such a manner that the supply and the stop of the plating current are repeated, and that the proportion of a current supply time during which the plating current is supplied increases with the progress of plating, thereby filling a plated metal into the vias. | 06-21-2012 |
| 20120152750 | MULTI-ANODE SYSTEM FOR UNIFORM PLATING OF ALLOYS - Disclosed are embodiments of an electroplating system and an associated electroplating method that allow for depositing of metal alloys with a uniform plate thickness and with the means to alter dynamically the alloy composition. Specifically, by using multiple anodes, each with different types of soluble metals, the system and method avoid the need for periodic plating bath replacement and also allow the ratio of metals within the deposited alloy to be selectively varied by applying different voltages to the different metals. The system and method further avoids the uneven current density and potential distribution and, thus, the non-uniform plating thicknesses exhibited by prior art methods by selectively varying the shape and placement of the anodes within the plating bath. Additionally, the system and method allows for fine tuning of the plating thickness by using electrically insulating selectively placed prescribed baffles. | 06-21-2012 |
| 20120279863 | Method and apparatus for electroplating metal parts - A supply of metal parts are electroplated by progressively transferring the parts with a computer controlled robot into a series of open top tanks containing solutions. The tanks have submerged metal fixtures which temporarily support the parts, and each fixture in the electroplating tank is individually connected to a direct current power source through a corresponding timer switch controlled by the computer so that each part is plated for a precise time period independently of the time the part remains in the plating solution. Each fixture is coated with an insulation material and has a base with metal contact with a removable fixture member having limited metal line contact with the supporting part. A plurality of electroplating lines each include the above components, and common tanks in the lines receive an electroplating solution recirculated through a common filter and service tank where the solution is heated and controlled. | 11-08-2012 |
| 20120305403 | Electrical Chemical Plating Process - An electrical chemical plating process is provided. A semiconductor structure is provided in an electrical plating platform. A pre-electrical-plating step is performed wherein the pre-electrical-plating step is carried out under a fixed voltage environment and lasts for 0.2 to 0.5 seconds after the current is above the threshold current of the electrical plating platform. After the pre-electrical-plating step, a first electrical plating step is performed on the semiconductor structure. | 12-06-2012 |
| 20120305404 | METHOD AND APPARATUS FOR FLUID PROCESSING A WORKPIECE - An apparatus for fluid processing at least one workpiece is provided. The apparatus includes a housing configured to hold a fluid, a workpiece holder disposed within the housing and configured to retain the at least one workpiece and an electric field shield plate disposed within the housing adjacent each of the at least one workpiece, the electric field shield plate having at least one contoured area configured to vary a distance between the electric field shield plate and a surface of the workpiece in a space between the at least one contoured area and a corresponding portion of the surface of the workpiece. | 12-06-2012 |
| 20130026042 | TITANIUM DIOXIDE COATING METHOD - A titanium dioxide coating method is disclosed. An electrolyte containing Ti | 01-31-2013 |
| 20130056360 | METHOD FOR FORMING OXIDE FILM BY PLASMA ELECTROLYTIC OXIDATION - A method for forming an oxide film by plasma electrolytic oxidation includes a first step of placing an anode, which is a substrate with a conductive nitride film, and a cathode into an electrolyte of which the temperature range is from 20° C. to 100° C., and a second step of applying a voltage ranging from 50 V to 1000 V to the anode and cathode to finally form an oxide film on a surface of the conductive nitride film of the anode. The oxide film can be formed more rapidly than the prior art and has excellent crystallinity. | 03-07-2013 |
| 20130062209 | WORKING ELECTRODE DESIGN FOR ELECTROCHEMICAL PROCESSING OF ELECTRONIC COMPONENTS - An electroplating apparatus including a plating tank for containing a plating electrolyte. A counter electrode, e.g., anode, is present in a first portion of the plating tank. A cathode system is present in a second portion of the plating tank. The cathode system includes a working electrode and a thief electrode. The thief electrode is present between the working electrode and the counter electrode. The thief electrode includes an exterior face that is in contact with the plating electrolyte that is offset from the plating surface of the working electrode. In one embodiment, the thief electrode overlaps a portion of the working electrode about the perimeter of the working electrode. In one embodiment, a method is provided of using the aforementioned electroplating apparatus that provides increased uniformity in the plating thickness. | 03-14-2013 |
| 20130153432 | Amorphous Nickel Phosphorus Alloys for Oil and Gas - There is disclosed a system and method for applying an amorphous NiP alloy coating on pipes and rods, particularly for use in the oil and gas industries to inhibit corrosion, In an embodiment, the method comprises applying an amorphous nickel phosphorus or NiP alloy coating to pipes and rods for use in oil and gas industries, comprising; preparing a Watt's type nickel phosphorus (NiP) plating bath solution utilizing a Watt's type nickel electrolyte containing hypophosphorous acid; maintaining the plating bath solution temperature at between 120° F. and 170° F. adjusted to regulate phosphorus content over 11%; regulating a pH level of the plating bath solution between 1.0 and 3.0 utilizing sulphuric acid; and controlling the cathode current density in the range of 10-100 amps/sq/ft. Significant cost savings may be realized by using an electroplated nickel-phosphorus alloy over regular carbon steel alloy components at sufficient thickness to be pore free replacing the use of more expensive components made of stainless steels or nickel base alloys. | 06-20-2013 |
| 20130161197 | SUBSTRATE PLATING APPARATUS AND SUBSTRATE PLATING CONTROL METHOD - Disclosed herein is a substrate plating apparatus, including: a constant current device supplying power; cathode hangers that includes a plurality of clamps holding substrates, hall current sensors mounted on each of the clamps to detect current information, and wireless communication modules connected with the hall current sensors to wirelessly transmit the current information to the outside; a current rail mounted with the plurality of cathode hangers above a plating bath and connected with the constant current device; and an anode unit extending from the constant current device and dipped in a plating solution of the plating bath. | 06-27-2013 |
| 20130327650 | METHOD AND APPARATUS FOR ELECTROPLATING - An apparatus for electroplating a layer of metal onto the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer and an auxiliary cathode located between the anode and the ionically resistive ionically permeable element. The ionically resistive ionically permeable element serves to modulate ionic current at the wafer surface. The auxiliary cathode is configured to shape the current distribution from the anode. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect. | 12-12-2013 |
| 20140144781 | METHOD AND APPARATUS FOR DYNAMIC CURRENT DISTRIBUTION CONTROL DURING ELECTROPLATING - An apparatus for electroplating a layer of metal onto the surface of a wafer includes an auxiliary electrode that is configured to function both as an auxiliary cathode and an auxiliary anode during the course of electroplating. The apparatus further includes an ionic current collimator (e.g., a focus ring) configured to direct ionic current from the main anode to central portions of the wafer. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect. In one example, the auxiliary electrode functions as an auxiliary cathode in the beginning of electroplating when the terminal effect is pronounced, and subsequently is anodically biased. | 05-29-2014 |
| 20140251814 | Electro-Plating and Apparatus for Performing the Same - A method of plating a metal layer on a work piece includes exposing a surface of the work piece to a plating solution, and supplying a first voltage at a negative end of a power supply source to an edge portion of the work piece. A second voltage is supplied to an inner portion of the work piece, wherein the inner portion is closer to a center of the work piece than the edge portion. A positive end of the power supply source is connected to a metal plate, wherein the metal plate and the work piece are spaced apart from each other by, and are in contact with, the plating solution. | 09-11-2014 |
| 20140251815 | ELECTRICAL BRUSH PLATING SYSTEM AND METHOD FOR METAL PARTS - An electrical brush plating system and method for metal parts wherein a motion control member and a plating bath with a plating pen includes an anode member provided with an anode plate and bristles that are mounted on the motion control member. A part to be plated is disposed within the plating bath with the bristles provided towards the surface of the part to be plated and under the control of the motion control member, the bristles perform a relative friction motion with the surface of the part to be plated. During the relative friction motion, the surface of the part to be plated is opposite to the anode plate of the anode member. The method includes the steps of mounting the plating pen and the part to be plated; electrocleaning; strong activation; weak activation and electrical brush plating. The generation of pinholes, pits and nodules are avoided. | 09-11-2014 |
| 20140291158 | COATING FACILITY AND METHOD FOR COATING WORKPIECES - In order to provide a coating facility for coating workpieces, which includes a dip tank, into which the workpieces are introducible in order to coat them, a current conversion system for providing a coating current, which is feedable through the dip tank to coat the workpieces, and an electrode, which is configured to be arranged in the dip tank and which is electrically connected to the current conversion system, which coating facility is configured to be flexibly and reliably operated, it is proposed that the current conversion system comprises a current conversion unit, which includes a power switch and an isolating transformer, the power switch being connectable on the input side to a supply current source and being connected on the output side to the isolating transformer and the isolating transformer being connected on the input side to the power switch and on the output side to an electrode. | 10-02-2014 |
| 20150060291 | ELECTROPLATING APPARATUS FOR TAILORED UNIFORMITY PROFILE - Methods of electroplating metal on a substrate while controlling azimuthal uniformity, include, in one aspect, providing the substrate to the electroplating apparatus configured for rotating the substrate during electroplating, and electroplating the metal on the substrate while rotating the substrate relative to a shield such that a selected portion of the substrate at a selected azimuthal position dwells in a shielded area for a different amount of time than a second portion of the substrate having the same average arc length and the same average radial position and residing at a different angular (azimuthal) position. For example, a semiconductor wafer substrate can be rotated during electroplating slower or faster, when the selected portion of the substrate passes through the shielded area. | 03-05-2015 |
| 20150090599 | Insoluble Anode With a Plurality of Switchable Conductive Elements Used to Control Current Density in a Plating Bath - This application relates to systems and methods for controlling current density in an electrochemical bath using an anode assembly that comprises a plurality of anodes arranged across a surface of the anode assembly. In one embodiment, each of the anodes may be coupled to a power supply through an intervening electrical switch. A switch controller enables the selection of which anodes should be turned on or off during processing. In this way, current density across the anode assembly can be controlled in a uniform manner by turning on and off select anodes. Turning off a portion of the anodes may lower current density in that region. Likewise, turning on the portion of anodes will increase the current density in that region. | 04-02-2015 |
| 20150096894 | METHODS FOR ELECTROPLATING COPPER - Embodiments of the invention are directed to methods of electroplating copper onto at least one surface of a substrate in which more uniform electrical double layers are formed adjacent to the at least one surface being electroplated (i.e., the cathode) and an anode of an electrochemical cell, respectively. In one embodiment, the electroplated copper may be substantially-free of dendrites, exhibit a high-degree of (111) crystallographic texture, and/or be electroplated at a high-deposition rate (e.g., about 6 μm per minute or more) by electroplating the copper under conditions in which a ratio of a cathode current density at the at least one surface to an anode current density at an anode is at least about 20. In another embodiment, a porous anodic film may be formed on a consumable copper anode using a long conditioning process that promotes forming a more uniform electrical double layer adjacent to the anode. | 04-09-2015 |
| 20150337451 | ELECTRODEPOSITION SYSTEMS AND METHODS THAT MINIMIZE ANODE AND/OR PLATING SOLUTION DEGRADATION - Disclosed are electrodeposition systems and methods wherein at least three electrodes are placed in a container containing a plating solution. The electrodes are connected to a polarity-switching unit and include a first electrode, a second electrode and a third electrode. The polarity-switching unit establishes a constant polarity state between the first and second electrodes in the solution during an active plating mode, wherein the first electrode has a negative polarity and the second electrode has a positive polarity, thereby allowing a plated layer to form on a workpiece at the first electrode. The polarity-switching unit further establishes an oscillating polarity state between the second and third electrodes during a non-plating mode (i.e., when the first electrode is removed from the plating solution), wherein the second electrode and the third electrode have opposite polarities that switch at regular, relatively fast, intervals, thereby limiting degradation of the second electrode and/or the plating solution. | 11-26-2015 |
| 20150345039 | COMPOSITION HAVING ALKALINE PH AND PROCESS FOR FORMING SUPERCONFORMATION THEREWITH - A composition includes a solvent; a metal ion disposed in the solvent; an accelerator disposed in the solvent; and a suppressor disposed in the solvent, a pH of the composition being alkaline and effective to form a superconformation comprising a damascene deposit that includes an electrochemically reduced form of the metal ion. A process for forming a superconformation includes: contacting a substrate with a composition, the composition including: a solvent; a metal ion disposed in the solvent; an accelerator disposed in the solvent; and a suppressor disposed in the solvent; controlling a pH of the composition to be alkaline; and producing a damascene deposit on the substrate to form the superconformation, the damascene deposit including an electrochemically reduced form of the metal ion. | 12-03-2015 |
| 20160002813 | Method and Apparatus for Continuously Applying Nanolaminate Metal Coatings - Described herein are apparatus and methods for the continuous application of nanolaminated materials by electrodeposition. | 01-07-2016 |
| 20160115611 | ELECTROPLATING APPARATUS FOR TAILORED UNIFORMITY PROFILE - Methods of electroplating metal on a substrate while controlling azimuthal uniformity, include, in one aspect, providing the substrate to the electroplating apparatus configured for rotating the substrate during electroplating, and electroplating the metal on the substrate while rotating the substrate relative to a shield such that a selected portion of the substrate at a selected azimuthal position dwells in a shielded area for a different amount of time than a second portion of the substrate having the same average arc length and the same average radial position and residing at a different angular (azimuthal) position. For example, a semiconductor wafer substrate can be rotated during electroplating slower or faster, when the selected portion of the substrate passes through the shielded area. | 04-28-2016 |
| 20160130713 | POROUS, FLOW-THROUGH CONSUMABLE ANODES FOR USE IN SELECTIVE ELECTROPLATING - A method for electrodepositing a coating/free-standing layer on a workpiece in an electrolytic cell includes moving the workpiece and an anode applicator tool having a consumable anode insert relative to each other; anodically dissolving a metal from the insert and cathodically depositing the metal on the workpiece; providing flow of electrolyte solution through the insert to ensure that greater than 90% of the anodic reaction is represented by dissolution of the metal; recirculating collected electrolyte solution exiting the electrolytic cell through the insert; applying an electric current to the electrolytic cell; maintaining a concentration of the anodically dissolved metal within ±25% of each Ampere-hour per liter of electroplating solution; and creating a cathodic electrodeposit on the workpiece which includes the anodically dissolved metal, the chemical composition of the deposit varying by less than 25% in the deposition direction over a selected thickness of up to 25 microns of the deposit. | 05-12-2016 |
| 205097000 | Shaped counterelectrode | 3 |
| 20100032304 | High Resistance Ionic Current Source - A substantially uniform layer of a metal is electroplated onto a work piece having a seed layer thereon. This is accomplished by employing a “high resistance ionic current source,” which solves the terminal problem by placing a highly resistive membrane (e.g., a microporous ceramic or fretted glass element) in close proximity to the wafer, thereby swamping the system's resistance. The membrane thereby approximates a constant current source. By keeping the wafer close to the membrane surface, the ionic resistance from the top of the membrane to the surface is much less than the ionic path resistance to the wafer edge, substantially compensating for the sheet resistance in the thin metal film and directing additional current over the center and middle of the wafer. | 02-11-2010 |
| 20100116672 | METHOD AND APPARATUS FOR ELECTROPLATING - An apparatus for electroplating a layer of metal onto the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer and an auxiliary cathode located between the anode and the ionically resistive ionically permeable element. The ionically resistive ionically permeable element serves to modulate ionic current at the wafer surface. The auxiliary cathode is configured to shape the current distribution from the anode. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect. | 05-13-2010 |
| 20100314256 | CURRENT-LEVELING ELECTROPLATING/ELECTROPOLISHING ELECTRODE - A current-leveling electrode for improving electroplating and electrochemical polishing uniformity in the electrochemical plating or electropolishing of metals on a substrate is disclosed. The current-leveling electrode includes a base electrode and at least one sub-electrode carried by the base electrode. The at least one sub-electrode has a width which is less than a width of the base electrode to impart a generally tapered, stepped or convex configuration to the current-leveling electrode. | 12-16-2010 |
