Class / Patent application number | Description | Number of patent applications / Date published |
156345490 | With magnetic field generating means for control of the etchant gas | 14 |
20080210378 | Plasma Reactor Having Multiple Antenna Structure - A plasma reactor includes a chamber in which a wafer is treated by a plasma reaction, the chamber being provided at an upper portion with a cylindrical dielectric window, a multiple antenna structure disposed on upper and lower portions of the dielectric window to generate RF magnetic field and apply the RF magnetic field inside the chamber through the dielectric window, thereby generating RF electric field, and an RF electric power supply unit for allowing for a time variation of the magnetic field of the multiple antenna structure. | 09-04-2008 |
20090173445 | INDUCTIVELY COUPLED PLASMA PROCESSING APPARATUS HAVING INTERNAL LINEAR ANTENNA FOR LARGE ARE PROCESSING - An inductively coupled plasma processing apparatus for a large area processing includes a reaction chamber and a bending type antenna structure. The bending type antenna structure includes bending type linear antennas. Each of the bending type linear antennas has a first end, a second end and a bended portion. The bending type linear antennas are arranged horizontally in parallel with the substrate to pass through the reaction chamber inside the reaction chamber. The bending type linear antennas are spaced apart from each other. A bended portion of a bending type linear antenna is protruded out of the reaction chamber, a first end of each of the bending type linear antennas is protruded out of the reaction chamber and is coupled to an RF power, and a second end of each of the bending type linear antennas is protruded out of the reaction chamber and is coupled to a ground. | 07-09-2009 |
20090229758 | Apparatus for generating gas plasma, gas composition for generating plasma and method for manufacturing semiconductor device using the same - A method for manufacturing a semiconductor device may include: forming a main magnetic field having an axis, and forming a subsidiary magnetic field substantially parallel to the axis; applying an alternating current along a path between the main and the subsidiary magnetic fields; allowing a gas to flow along a flow path along the path of the current so that a gas plasma is generated from the gas; providing the gas plasma into a chamber separated from a position where the gas plasma is generated; and performing a process for manufacturing a semiconductor device by employing the gas plasma. | 09-17-2009 |
20100175832 | Plasma processing apparatus and plasma generating apparatus - The invention provides an ICP source plasma processing apparatus having improved the uniformity and ignition property of plasma. A plasma processing apparatus comprises a vacuum processing chamber | 07-15-2010 |
20100175833 | Plasma processing apparatus and plasma generating apparatus - The invention provides an ICP source plasma processing apparatus having improved the uniformity and ignition property of plasma. A plasma processing apparatus for generating plasma in a vacuum processing chamber to subject a sample to plasma processing, comprising multiple sets ( | 07-15-2010 |
20100230053 | PLASMA PROCESSING APPARATUS - The invention provides a plasma processing apparatus for subjecting a sample to plasma processing by generating plasma within a vacuum processing chamber | 09-16-2010 |
20110303365 | Plasma Etching Apparatus - The present invention relates to a plasma etching apparatus capable of uniformly etching the entire surface of a substrate regardless of the kind of the substrate. A plasma etching apparatus | 12-15-2011 |
20120247680 | PLASMA STABILIZATION METHOD AND PLASMA APPARATUS - A plasma technique in which a plasma generation technique frequently used in various fields including a semiconductor manufacturing process is used, and generation of plasma instability (high-speed impedance change of a plasma) can efficiently be suppressed and controlled in order to manufacture stable products. An apparatus includes a processing chamber, a surrounding member disposed around the processing chamber, an RF induction coil disposed outside the dielectric member, and an air-core coil for generating a direct-current magnetic field supplied to the inner space. The surrounding member seals an opening on top of the processing chamber to create an inner space, and the RF induction coil is above the top surface of the surrounding member. | 10-04-2012 |
20130186568 | Faraday Shield Having Plasma Density Decoupling Structure Between TCP Coil Zones - A Faraday shield and a plasma processing chamber incorporating the Faraday shield is are provided. The plasma chamber includes an electrostatic chuck for receiving a substrate, a dielectric window connected to a top portion of the chamber, the dielectric window disposed over the electrostatic chuck, and a Faraday shield. The Faraday shield is disposed inside of the chamber and defined between the electrostatic chuck and the dielectric window. The Faraday shield includes an inner zone having an inner radius range that includes a first and second plurality of slots and an outer zone having an outer radius range that includes a third plurality of slots. The inner zone is adjacent to the outer zone. The Faraday shield also includes a band ring separating the inner zone and the outer zone, such that the first and second plurality of slots do not connect with the third plurality of slots. | 07-25-2013 |
20140174663 | PLASMA STABILIZATION METHOD AND PLASMA APPARATUS - A plasma technique in which a plasma generation technique frequently used in various fields including a semiconductor manufacturing process is used, and generation of plasma instability (high-speed impedance change of plasma) can efficiently be suppressed and controlled in order to manufacture stable products. An apparatus includes a processing chamber, a surrounding member disposed so as to surround the processing chamber, an RF induction coil disposed above the top surface, a direct-current magnetic field generator for supplying a direct-current magnetic field to the inner space, and an RF cut filter connected to a direct current (DC) power supply and connected to the direct-current magnetic field generator. The RF cut filter includes a first capacitor connected to a positive terminal of the DC power supply and to ground, and a second capacitor connected to a negative terminal of the DC power supply and to ground. | 06-26-2014 |
20140209244 | SKEW ELIMINATION AND CONTROL IN A PLASMA ENHANCED SUBSTRATE PROCESSING CHAMBER - Methods and apparatus for plasma-enhanced substrate processing are provided herein. In some embodiments, an apparatus for processing a substrate includes: a process chamber having an internal processing volume disposed beneath a dielectric lid of the process chamber; a substrate support disposed in the process chamber; one or more inductive coils disposed above the dielectric lid to inductively couple RF energy into the processing volume above the substrate support; and one or more first electromagnets to form a first static magnetic field that is substantially vertical in direction and axisymmetric about a central processing axis of the process chamber, and having a magnitude of about 2 to about 10 gauss within the processing volume proximate the lid. | 07-31-2014 |
20150332898 | PLASMA PROCESSING APPARATUS - Provided is a plasma processing apparatus that performs a processing on a processing target substrate by applying plasma of a processing gas on the processing target substrate. The plasma processing apparatus includes: a processing container configured to accommodate the processing target substrate; a lower electrode disposed in the processing container to mount the processing target substrate thereon; an upper electrode disposed in the processing container to face the lower electrode with a processing space being interposed therebetween; a high frequency power source configured to apply a high frequency power between the upper electrode and the lower electrode; a main magnet unit including one or more annular main electromagnetic coils arranged around a central axis; and an auxiliary magnet unit configured to form a magnetic field that perpendicularly or obliquely crosses the central axis in the processing space. | 11-19-2015 |
20160013029 | Apparatus For Generating Plasma Using Dual Plasma Source And Apparatus For Treating Substrate Including The Same | 01-14-2016 |
20160379801 | ROTATIONAL ANTENNA AND SEMICONDUCTOR DEVICE INCLUDING THE SAME - A rotational antenna and a semiconductor manufacturing device provided with the same are disclosed. The rotational antenna includes a plurality of coils connected in parallel to a high frequency power source and arranged at a regular interval around an axis in a symmetrical relationship with respect to the axis, wherein an electromagnetic field for generating inductively coupled plasma is uniformly formed when the coils are rotated about the axis. | 12-29-2016 |