| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 156345470 | Parallel plate electrodes | 10 |
| 20080264567 | Dry etching method and apparatus for performing dry etching - A dry etching method includes loading a wafer on a lower electrode having at least two cooling paths. Cooling fluids having different temperatures are supplied to each of the cooling paths of the lower electrode so that the multiple cooling paths are at different temperatures from one another. The wafer is etched during cooling. | 10-30-2008 |
| 20090008035 | PLASMA PROCESSING APPARATUS - In a plasma processing apparatus for conducting plasma process on a semiconductor wafer | 01-08-2009 |
| 20090294065 | CEILING ELECTRODE WITH PROCESS GAS DISPERSERS HOUSING PLURAL INDUCTIVE RF POWER APPLICATORS EXTENDING INTO THE PLASMA - A gas distribution plate is formed of a metallic body having a bottom surface with plural gas disperser orifices and an internal gas manifold feeding the orifices. Each one of an array of discrete RF power applicators held in the plate includes (a) an insulating cylindrical housing extending through the plate, a portion of the housing extending outside of the plate through the bottom surface, and (b) a conductive solenoidal coil contained within the housing, a portion of the coil lying within the portion of the housing that extends outside of the plate through the bottom surface. | 12-03-2009 |
| 20100096087 | Apparatus For Aligning Electrodes In A Process Chamber to Protect An Exclusion Area Within An Edge Environ Of A Wafer - Positional relationships are established in a process chamber. A base is configured with a lower electrode surface to support a wafer, and an upper electrode has a lower surface. A drive mounted on the base has a linkage connected to the upper electrode. A fixture placed on the lower surface moves into a desired orientation of the lower electrode. With the upper electrode loosely connected by the linkage to the drive, the fixture transfers the desired orientation to the upper electrode. The linkage is tightened to maintain the desired orientation, the fixture is removed and a process exclusion insert is mounted to the upper electrode. The drive moves the upper electrode and the insert to define an inactive process zone between the upper electrode and the wafer on the lower electrode to protect a central area of the wafer during etching of a wafer edge environ around the central area. | 04-22-2010 |
| 20100126668 | PLASMA PROCESSING APPARATUS AND METHOD - An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching. | 05-27-2010 |
| 20110088850 | PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, AND STORAGE MEDIUM - A plasma processing apparatus that enables polymer to be removed from an electrically insulated electrode. A susceptor of the plasma processing apparatus is disposed in a substrate processing chamber having a processing space therein. A radio frequency power source is connected to the susceptor. An upper electrode plate is electrically insulated from a wall of the substrate processing chamber and from the susceptor. A DC power source is connected to the upper electrode plate. A controller of the plasma processing apparatus determines a value of a negative DC voltage to be applied to the upper electrode plate in accordance with processing conditions for RIE processing to be carried out. | 04-21-2011 |
| 20110240224 | SUBSTRATE PROCESSING APPARATUS - Disclosed is a substrate processing apparatus capable of suppressing generation of plasma in the space between a moving electrode and an end wall at one side of a cylindrical chamber. The substrate processing apparatus includes a cylindrical chamber to receive a wafer, a shower head movable along a central axis of the chamber inside the chamber, a susceptor opposing the shower head in the chamber, and a flexible bellows connecting the shower head to a cover of the chamber, wherein a high frequency power is applied to a processing space presented between the shower head and the susceptor, processing gas is introduced into the processing space, the shower head and the side wall of the chamber are non-contact to each other, and a bypass member is installed electrically connecting the shower head and the cover or the side wall of the chamber. | 10-06-2011 |
| 20120285622 | PLASMA DEVICE - A plasma device includes: a reaction chamber; an upper electrode positioned upward in the reaction chamber; a lower electrode facing the upper electrode; a baffle plate enclosing the lower electrode and including a plurality of cutouts formed at the edge thereof, wherein a boundary line of the cutout is connected to a boundary line of the baffle plate, thereby forming a recess portion at the edge of the baffle plate. The cutouts of the baffle plate change the flow of the reactive gas in the chamber, helping achieve a more uniform etch. | 11-15-2012 |
| 20120285623 | PLASMA PROCESSING APPARATUS AND METHOD - There is provided a plasma processing apparatus including a plasma generating unit for generating a plasma in a processing chamber in which a set processing is performed on a substrate serving as an object to be processed. The plasma processing apparatus further includes a particle moving unit for electrostatically driving particles in a region above the substrate to be removed out of the region above the substrate in the processing chamber while the processing on the substrate is performed by using the plasma. In addition, there is provided a plasma processing method of a plasma processing apparatus including the steps of generating plasma in a processing chamber in which a set processing is performed on a substrate serving as an object to be processed; and performing the processing on the substrate by the plasma. | 11-15-2012 |
| 20140174662 | PLASMA PROCESSING DEVICE - A plasma processing device according to one embodiment comprises a processing vessel, a gas supply unit, a lower electrode and an upper electrode. The processing vessel defines a processing space. The gas supply unit supplies processing gas into the processing space. The lower electrode is provided below the processing space. The upper electrode is provided above the processing space, and a covering layer having plasma-resistant properties is formed on this upper electrode. The surface of this covering layer is polished. | 06-26-2014 |
