| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 156345410 | With microwave gas energizing means | 55 |
| 20090056876 | Work Processing System and Plasma Generating Apparatus - A work processing system S is provided with a plasma generating unit PU including a microwave generator | 03-05-2009 |
| 20090139658 | PLASMA PROCESSING APPARATUS - A slotted conducting cylinder ( | 06-04-2009 |
| 20090159214 | MICROWAVE PLASMA SOURCE AND PLASMA PROCESSING APPARATUS - A microwave plasma source ( | 06-25-2009 |
| 20090165953 | Plasma Reactor - A plasma reactor ( | 07-02-2009 |
| 20090194236 | Plasma processing equipment - A plurality of concentric ring-shaped slots ( | 08-06-2009 |
| 20090194237 | PLASMA PROCESSING SYSTEM - A plasma processing system includes: a plasma processing apparatus which processes a substrate in a processing container by turning a processing gas supplied inside the processing container into plasma; and a carrier arm which carries the substrate in and out of the processing container, wherein a loading table is mounted inside the processing container and the substrate is loaded on the top surface of the loading table, and one or more recessed portions are formed on regions of the top surface of the loading table, wherein the regions corresponds to locations on the carrier arm for supporting the substrate. The coating layer is not transferred from the top surface of the loading table to the back of the substrate in the regions corresponding to the locations on the carrier arm for supporting the substrate. Accordingly, the coating layer is not transferred to the top surface of the carrier arm. | 08-06-2009 |
| 20090211708 | PLASMA PROCESSING APPARATUS - Provided is a plasma processing apparatus featuring highly improved plasma ignition property and ignition stability by defining a positional relationship between a dielectric and the slots. A plasma processing apparatus | 08-27-2009 |
| 20090218044 | MICROWAVE PLASMA PROCESSING APPARATUS, DIELECTRIC WINDOW FOR USE IN THE MICROWAVE PLASMA PROCESSING APPARATUS, AND METHOD FOR MANUFACTURING THE DIELECTRIC WINDOW - A conventional microwave plasma processing apparatus, even when krypton (Kr) is used as a plasma-generation gas, can only obtain an oxide film or a nitride film having the same level of characteristics as those obtained when a rare gas such as argon (Ar) is used as a plasma-generation gas. Accordingly, instead of forming a dielectric window of a microwave plasma processing apparatus with only a ceramic member, a planarization film capable of obtaining a stoichiometric SiO | 09-03-2009 |
| 20090229755 | Plasma processing apparatus - A plasma processing apparatus comprises a processing vessel defined by an outer wall and provided with a stage that holds a substrate to be processed thereon, an evacuation system coupled to the processing vessel, a microwave window provided on the processing vessel as a part of the outer wall so as to face the substrate to be processed on the stage, a plasma gas supplying part supplying a plasma gas to the processing vessel, and a microwave antenna provided on the processing vessel in correspondence to the microwave. The plasma gas supplying part includes a porous medium and the plasma gas supplying part supplies the plasma gas through the porous medium. | 09-17-2009 |
| 20090242130 | PLASMA PROCESSING APPARATUS - The present invention relates to a plasma processing apparatus including: a processing chamber whose ceiling portion is opened and the inside thereof can be evacuated to vacuum; a ceiling plate which is made of dielectric material and is airtightly mounted to an opening of the ceiling portion; a planar antenna member which is installed on a top surface of the ceiling plate, for introducing a microwave into the processing chamber; and a coaxial waveguide, which has a central conductor connected to the planar antenna member, for supplying the microwave, wherein a gas passage is formed to pass through the central conductor, the planar antenna member, and the ceiling plate, and an electric field attenuating recess for attenuating an electric field intensity of the center portion of the ceiling plate is installed on a top surface of a center area of the ceiling plate. | 10-01-2009 |
| 20090266487 | MICROWAVE INTRODUCTION DEVICE - A microwave introduction device includes a microwave generator for generating a microwave of a predetermined frequency, a mode converter for converting the microwave into a predetermined oscillation mode, a planar antenna member arranged toward a predetermined space, and a coaxial waveguide connecting the mode converter with the planar antenna member to propagate the microwave. A central conductor of the coaxial waveguide is formed in a cylindrical shape, an inner diameter D | 10-29-2009 |
| 20090301656 | MICROWAVE PLASMA PROCESSING APPARATUS - An end of the slot plate of the microwave antenna, which constitutes a microwave plasma processing apparatus, is held and fixed by being held between a pair of metal bodies. | 12-10-2009 |
| 20100006227 | Microwave Plasma Reactor - A microwave plasma reactor ( | 01-14-2010 |
| 20100012275 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus including an essentially cylindrical chamber, which is airtight and grounded. The antenna unit is disposed on top of the chamber. The chamber has a divisible structure formed of an essentially cylindrical housing and a cylindrical chamber wall connected to the housing from above and surrounding a process space. The chamber wall is detachable. | 01-21-2010 |
| 20100032094 | CEILING PLATE AND PLASMA PROCESS APPARATUS - A ceiling plate provided at a ceiling portion of a process chamber that may be evacuated to a vacuum is disclosed. The ceiling plate allows microwaves emitted from a slot of a planar antenna member provided along with the ceiling plate to pass through the ceiling plate into the process chamber, and includes plural protrusion portions provided in a radial pattern on a surface of the ceiling plate, the surface facing toward an inside of the process chamber. | 02-11-2010 |
| 20100043976 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes: a decompression chamber of which the inside is depressed; a gas supply unit that supplies process gas into said chamber; a microwave supply unit that supplies a microwave into the chamber to generate plasma; an object-placing electrode where a processing material, is placed and which holds the processing material in the chamber; and a vacuuming unit that is connected to the chamber to discharge the gas in the chamber, in which the chamber, a part for providing gas into the chamber of the gas supply unit, a part for introducing a microwave into the chamber of the microwave supply unit, the object-placing electrode, and the vacuuming unit are disposed coaxially with the center axis of the chamber, and the part for introducing a microwave includes a microwave rotation generator that rotates a polarization plane of the input microwave and supplies the microwave to the chamber. | 02-25-2010 |
| 20100089534 | Planar Controlled Zone Microwave Plasma System - An apparatus and method for initiating a process gas plasma. A conductive plate having a plurality of conductive fingers is positioned in a microwave applicator. An arc forms between the conductive fingers to initiate the formation of a plasma. A transport mechanism may convey process materials through the plasma. A spray port may be provided to expel processed materials. | 04-15-2010 |
| 20100132891 | VALVE AND PROCESSING APPARATUS PROVIDED WITH THE SAME - A disclosed valve comprises a first valve body including first and second openings that permit gaseous communication between a chamber and an evacuation apparatus; a sealing valve element that moves near/away from the second opening to open/close the second opening; a sealing member provided in the sealing valve element to seal the second opening when the sealing valve element closes the second opening; a valve element retreat area that is provided in an inner wall of the first valve body away from the second opening, and shields the sealing member from an inside of the first valve body when the sealing valve element is moved to the valve element retreat area; and a first pivot shaft that pivots the sealing valve element so that the sealing valve element may be located in one of the second opening and the valve element retreat area. | 06-03-2010 |
| 20110048643 | PLASMA PROCESSING APPARATUS AND FOCUS RING - A plasma processing apparatus and a focus ring enables to perform uniform plasma processing over the entire surface of a substrate to be processed to thereby improve in-surface uniformity of plasma processing compared with conventional cases. The focus ring is disposed on a susceptor | 03-03-2011 |
| 20110061814 | MICROWAVE INTRODUCING MECHANISM, MICROWAVE PLASMA SOURCE AND MICROWAVE PLASMA PROCESSING APPARATUS - A microwave introducing mechanism | 03-17-2011 |
| 20110088848 | MICROWAVE PLASMA-TREATING APPARATUS - To provide a microwave plasma-treating apparatus which is capable of generating plasma having a high degree of uniformity of density and a high density for executing large-quantity and high-speed processing, capable of generating plasma of a large area, and capable of preventing dielectric windows from being thermally broken despite the apparatus being operated with large electric power for extended periods of time. The microwave plasma-treating apparatus includes a waveguide arranged to feed microwave electric power, a plurality of microwave coupling holes formed in the waveguide in the axial direction thereof, a dielectric member of a piece of plate capable of transmitting microwaves arranged in the waveguide in the axial direction thereof under the microwave coupling holes, a gap formed between the plurality of microwave coupling holes and the dielectric member, and a cooling member for cooling the dielectric member. Desirably, the microwave coupling holes have an annular shape. | 04-21-2011 |
| 20110253311 | SUBSTRATE PROCESSING APPARATUS FOR PERFORMING PLASMA PROCESS - A substrate processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate. The apparatus includes a gas feed passage configured to supply a process gas into the process container and an exhaust passage configured to exhaust gas from inside the process container. The apparatus further includes a plasma generation mechanism configured to generate plasma of the process gas inside the process container and a metal component to be exposed to plasma inside the process container. The metal component is provided with a silicon film that coats at least a portion thereof to be exposed to plasma and to suffer an intense electric filed generated thereabout. | 10-20-2011 |
| 20110265952 | MICROWAVE PLASMA PROCESSING DEVICE AND GATE VALVE FOR MICROWAVE PLASMA PROCESSING DEVICE - A gate valve includes a plate-shaped valve element which is rectangular-shaped to suit the shape of an opening of a processing chamber and has a size larger than the opening. A hermetically sealing member to perform hermetic sealing by abutting on and being pressed against an outer side of the processing chamber is provided in the valve element. A microwave reflecting mechanism which is formed in a groove shape so as to surround a periphery of the hermetically sealing member is provided at an outer peripheral portion of the hermetically sealing member. | 11-03-2011 |
| 20120067523 | TUNER AND MICROWAVE PLASMA SOURCE - A tuner matching an impedance of a load in the chamber to a characteristic impedance of the microwave power source is provided. The tuner includes: a body having a tubular outer conductor and a tubular inner conductor coaxially provided in the outer conductor, the body forming a part of the microwave transmission path; an annular dielectric slug provided between the outer conductor and the inner conductor, the slug being movable along a longitudinal direction of the inner conductor; and a drive mechanism for moving the slug and including a drive part for applying a driving force; a drive transmission part for transmitting the driving force to the slug; a drive guide part for guiding movement of the slug; and a holding part for holding the slug at the drive transmission part. The drive transmission part, the drive guide part and the holding part are accommodated in the inner conductor. | 03-22-2012 |
| 20120211165 | SAMPLE TABLE AND MICROWAVE PLASMA PROCESSING APPARATUS - A sample table which stably holds a semiconductor wafer by maintaining smoothness of a contact surface via a lapping process and forming the contact surface to have an approximate recess shape, and a microwave plasma processing apparatus including the sample table. The sample table holds a semiconductor wafer on which a plasma process is to be performed, and includes: an adsorption plate that has a contact surface on which a lapping process has been performed and surface-contacting the semiconductor wafer, and that adsorbs the semiconductor wafer; and a supporting substrate which has a recess surface to which a noncontact surface of the adsorption plate is adhered, wherein a difference between a depth of an approximate center portion of the recess surface and a depth of a distant portion spaced apart from the approximate center portion is larger than a difference between a thickness of the adsorption plate at a portion contacting the approximate center portion and a thickness of the adsorption plate at a portion contacting the distant portion. Also, a microwave plasma processing apparatus includes the sample table. | 08-23-2012 |
| 20120222816 | SURFACE WAVE PLASMA GENERATING ANTENNA AND SURFACE WAVE PLASMA PROCESSING APPARATUS - A surface wave plasma generating antenna serves to generate a surface wave plasma in a chamber by radiating into the chamber a microwave transmitted from a microwave output section through a coaxial waveguide including an outer conductor and an inner conductor. The surface wave plasma generating antenna is formed in a planar shape and has a plurality of slots arranged in a circumferential direction, and each joint portion between two adjacent slots in the circumferential direction is overlapped with at least one of the slots in a diametrical direction. | 09-06-2012 |
| 20120241090 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a processing chamber; a gas supply unit for supplying a processing gas into the processing chamber; a microwave generator for generating microwave; an antenna for introducing the microwave for plasma excitation into the processing chamber; a coaxial waveguide provided between the microwave generator and the antenna; a holding unit, disposed to face the antenna in a direction of a central axis line of the coaxial waveguide, for holding a processing target substrate; a dielectric window, provided between the antenna and the holding unit, for transmitting the microwave from the antenna into the processing chamber; and a dielectric rod provided in a region between the holding unit and the dielectric window along the central axis line. | 09-27-2012 |
| 20120247676 | PLASMA PROCESSING APPARATUS AND MICROWAVE INTRODUCTION DEVICE - A plasma processing apparatus includes a microwave introduction device which introduces a microwave into a process chamber. The microwave introduction device includes a plurality of microwave transmitting plates which is fitted into a plurality of openings of a ceiling. The microwave transmitting plates are arranged on one virtual plane parallel to a mounting surface of a mounting table, with the microwave transmitting plates fitted into the respective openings. The microwave transmitting plates includes first to third microwave transmitting plates. The first to third microwave transmitting plates are arranged in such a manner that a distance between the center point of the first microwave transmitting window and the center point of the second microwave transmitting window becomes equal or approximately equal to a distance between the center point of the first microwave transmitting window and the center point of the third microwave transmitting window. | 10-04-2012 |
| 20130008607 | ANTENNA, DIELECTRIC WINDOW, PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - An antenna, a dielectric window, a plasma processing apparatus and a plasma processing method are capable of improving uniformity of a substrate surface processing amount in the surface of the substrate. The antenna includes the dielectric window | 01-10-2013 |
| 20130081763 | CEILING PLATE AND PLASMA PROCESS APPARATUS - A ceiling plate provided at a ceiling portion of a process chamber that may be evacuated to a vacuum is disclosed. The ceiling plate allows microwaves emitted from a slot of a planar antenna member provided along with the ceiling plate to pass through the ceiling plate into the process chamber, and includes plural protrusion portions arranged along a circle in a surface of the ceiling plate so as to form plural radially disposed virtual convex portions in a place between the concave portions, the surface facing toward an inside of the process chamber. A thickness of places where the concave portions are formed in the ceiling plate and another thickness of other places where the concave portions are not formed in the ceiling plate are determined so that the number of propagation modes of microwaves is different. | 04-04-2013 |
| 20130112352 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes: a processing chamber produced from a metal; a susceptor configured to mount a substrate; an electromagnetic wave source that supplies an electromagnetic wave; one or more dielectric member provided at an inner wall of the processing chamber, and configured to transmit the electromagnetic wave into an inside of the processing chamber; one or more metal electrode, wherein each metal electrode is installed on a bottom surface of each dielectric member such that a part of the each dielectric member is exposed to the inside of the processing chamber; and a surface wave propagating section which is a metal surface facing the susceptor, the surface wave propagating section being installed adjacent to the dielectric member and being exposed to the inside of the processing chamber. The surface wave propagating section and a bottom surface of the metal electrode are positioned on the same plane. | 05-09-2013 |
| 20130126094 | SUBSTRATE PROCESSING APPARATUS - Disclosed is a substrate processing apparatus with an improved structure to reduce impurities in a chamber being attached to a substrate during processing of the substrate. The substrate processing apparatus generates plasma to process a substrate and includes a sidewall configured to receive the substrate on a receiving portion surrounded by the sidewall and a dielectric coupled to an upper part of the sidewall configured to hermetically seal the receiving portion, wherein the dielectric includes a shielding portion protruding from a bottom of the dielectric opposite the substrate to an inside of the receiving portion and a curved portion in a region at which the bottom and the shielding portion are connected to each other. | 05-23-2013 |
| 20130180661 | MICROWAVE INTRODUCING MECHANISM, MICROWAVE PLASMA SOURCE AND MICROWAVE PLASMA PROCESSING APPARATUS - The microwave introducing mechanism includes an antenna unit having a planar antenna radiating a microwave into a chamber; a tuner for performing impedance matching; and a heat dissipation device for dissipating a heat from the antenna unit. The tuner has a tuner main body including a tubular outer conductor and a tubular inner conductor to serve as a part of a microwave transmission line; slugs provided between the outer conductor and the inner conductor to be movable along a longitudinal direction of the inner conductor; and a driving device for moving the slugs. The heat dissipation device has a heat pipe configured to transfer the heat of the antenna unit from its heat input end to its heat dissipation end. | 07-18-2013 |
| 20130192760 | MICROWAVE EMITTING DEVICE AND SURFACE WAVE PLASMA PROCESSING APPARATUS - A microwave emitting device emits a microwave generated by a microwave generation unit into a chamber in a plasma processing apparatus for performing plasma processing by generating a surface wave plasma in the chamber. The device includes: a transmission line having a tubular outer conductor and an inner conductor disposed in the outer conductor to transmit the microwave; an antenna to emit the microwave transmitted through the microwave transmission line into the chamber through slots; a dielectric member to transmit the microwave emitted from the antenna to generate a surface wave; and a DC voltage application member to apply a positive DC voltage to a plasma generation region where a surface wave plasma is generated by the surface wave. | 08-01-2013 |
| 20130264014 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes an ICP antenna, provided outside a processing chamber opposite to a mounting table, for supplying a high frequency power supply into the processing chamber, and a window member made of a conductor, disposed between the mounting table and the ICP antenna, forming a part of a wall of the processing chamber. The window member includes transmission units for transmitting the high frequency power in a thickness direction of the window member. Each of transmission units has a slit, which extends through the window member in the thickness direction and is configured such that its width is changeable. | 10-10-2013 |
| 20140158302 | MICROWAVE RADIATION ANTENNA, MICROWAVE PLASMA SOURCE AND PLASMA PROCESSING APPARATUS - A microwave radiation antenna includes an antenna body having a microwave radiation surface; a processing gas inlet configured to introduce a processing gas into the antenna body; a gas diffusion space configured to diffuse the processing gas in the antenna body; a plurality of gas outlets provided in the antenna body and configured to discharge the processing gas into the chamber; a plurality of slots provided in the antenna body under a state where the slots are separated from the gas diffusion space and the gas outlets; and an annular dielectric member provided in the microwave radiation surface side of the antenna body to cover a slot formation region where the slots are formed. A metal surface wave is formed in the microwave radiation surface by the microwave radiated through the slots and the annular dielectric member and a surface wave plasma is generated by the metal surface wave. | 06-12-2014 |
| 20140231016 | PLASMA PROCESSING APPARATUS - Disclosed is a plasma processing apparatus including a processing container that defines a processing space, a mounting table, and a microwave introducing antenna. The mounting table includes a mounting region where a workpiece accommodated in the processing container is mounted. The microwave introducing antenna includes a dielectric window installed above the mounting table. The dielectric window includes a bottom surface region that adjoins the processing space. The bottom surface region is configured in an annular shape so as to limit a region where a surface wave is propagated to a region above an edge of the mounting region. | 08-21-2014 |
| 20140231017 | PLASMA ETCHING APPARATUS - A plasma etching apparatus includes a process chamber, a susceptor, microwave permeable plate that is made of a dielectric material that allows microwaves to pass therethrough, a microwave supplying portion including a microwave generation apparatus that generates microwaves of a predetermined frequency, a gas supplying portion for supplying a process gas, an evacuation portion, a bias electric power supplying portion; and an alternating bias electric power control portion that controls the alternating bias electric power, wherein the alternating bias electric power control portion controls the alternating bias electric power so that supplying and disconnecting the alternating bias electric power to the susceptor are repeated to allow a ratio of a time period of supplying the alternating bias electric power with respect to a total time period of supplying the alternating bias electric power and disconnecting the alternating bias electric power to be 0.1 or more and 0.5 or less. | 08-21-2014 |
| 20140251541 | PLASMA PROCESSING APPARATUS - Disclosed is a plasma processing apparatus including: a processing container having a cylindrical columnar shape centering around a predetermined axis and defining a processing space therein; a plurality of columnar dielectric bodies installed at a top side of the processing space; a microwave generator configured to generate microwaves; a waveguide unit configured to connect the microwave generator and the plurality of columnar dielectric bodies; and a stage installed within the processing container to intersect with the predetermined axis. The plurality of columnar dielectric bodies are arranged at predetermined intervals along a circumferential direction around the predetermined axis within the processing space. The waveguide unit branches microwaves input from the microwave generator and supplies the branched microwaves to the plurality of columnar dielectric bodies. | 09-11-2014 |
| 20140262040 | METHOD AND SYSTEM USING PLASMA TUNING RODS FOR PLASMA PROCESSING - A plasma-tuning rod configured for use with a microwave processing system. The waveguide includes a first dielectric portion having a first outer diameter. A second dielectric portion, with a second outer diameter greater than the first outer diameter surrounds the first dielectric portion, and may be coaxial therewith. In some embodiments of the present invention, a dielectric constant of the first dielectric portion may be equal to or greater than a dielectric constant of the second dielectric portion. | 09-18-2014 |
| 20140262041 | Microwave Surface-Wave Plasma Device - A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electric field may interact with process gas in the processing chamber to generate plasma for treating the substrate. The interior cavity may be isolated from the process chamber by a dielectric component that covers the continuous slit. The power transmission element may be used to control plasma density within the process chamber, either by itself or in combination with other plasma sources. | 09-18-2014 |
| 20140262042 | Microwave Surface-Wave Plasma Device - A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electric field may interact with process gas in the processing chamber to generate plasma for treating the substrate. The interior cavity may be isolated from the process chamber by a dielectric component that covers the continuous slit. The power transmission element may be used to control plasma density within the process chamber, either by itself or in combination with other plasma sources. | 09-18-2014 |
| 20150007940 | PLASMA PROCESSING DEVICE AND HIGH-FREQUENCY GENERATOR - Provided is a plasma processing device which processes an object to be processed using plasma. The plasma processing device includes: a processing container configured to perform a processing by the plasma therein; and a plasma generation mechanism including a high-frequency generator disposed outside the processing container to generate high-frequency waves. The plasma generation mechanism is configured to generate the plasma in the processing container using the high-frequency waves generated by the high-frequency generator. The high-frequency generator includes a high-frequency oscillator configured to oscillate the high-frequency waves and an injection unit configured to inject a signal into the high-frequency oscillator. The signal has a frequency which is the same as a fundamental frequency oscillated by the high-frequency oscillator and has reduced different frequency components. | 01-08-2015 |
| 20150013913 | MICROWAVE PLASMA PROCESSING APPARATUS - A microwave plasma processing apparatus including a processing space; a dielectric window having a facing surface facing the processing space; and an antenna plate installed on a surface of the dielectric window opposite to the facing surface, and formed with a plurality of slots configured to radiate microwaves for plasma excitation to the processing space through the dielectric window. The plurality of slots includes a first slot group configured to transmit microwaves guided to a center side of the dielectric window, and a second slot group configured to transmit microwaves guided to a peripheral edge side of the dielectric window. The dielectric window includes a first concave portion in a region corresponding to the first slot group of the antenna plate on the facing surface, and a second concave portion in a region corresponding to the second slot group of the antenna plate on the facing surface. | 01-15-2015 |
| 20150107773 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus for exciting a processing gas by a microwave, includes a focus ring extending in an annular shape, a first tubular member being wrapped around a central axis to extend along an outer periphery of the lower electrode below the focus ring, an annular member made of a dielectric material provided between the focus ring and the first tubular member a second tubular member extending along an outer periphery of the first tubular member and a choke portion suppressing a microwave propagating through the first tubular member via the focus ring and the annular member. And the choke portion protrudes outward in a diametrical direction of the first tubular from the outer periphery of the first tubular member and extends in an annular shape along the periphery of the first tubular member, the choke portion is covered by the second tubular member. | 04-23-2015 |
| 20150144265 | PLASMA PROCESSING APPARATUS AND MICROWAVE INTRODUCTION DEVICE - A plasma processing apparatus includes a microwave introduction device which introduces a microwave into a process chamber. The microwave introduction device includes a plurality of microwave transmitting plates which is fitted into a plurality of openings of a ceiling. The microwave transmitting plates are arranged on one virtual plane parallel to a mounting surface of a mounting table, with the microwave transmitting plates fitted into the respective openings. The microwave transmitting plates includes first to third microwave transmitting plates. The first to third microwave transmitting plates are arranged in such a manner that a distance between the center point of the first microwave transmitting window and the center point of the second microwave transmitting window becomes equal or approximately equal to a distance between the center point of the first microwave transmitting window and the center point of the third microwave transmitting window. | 05-28-2015 |
| 20150380216 | SUBSTRATE TREATING APPARATUS - The inventive concepts provide a substrate treating apparatus. The apparatus includes a process chamber, a substrate support unit, a gas supply unit, a microwave applying unit, an antenna plate, a slow-wave plate, a dielectric plate, and an exhaust baffle, and a liner. The liner includes a body having a ring shape facing an inner sidewall of the process chamber, and a flange extending from the body into a wall portion of the process chamber. The flange prevents an electric field of a microwave and a process gas from being provided into a gap between the process chamber and the body. Thus, it is possible to inhibit particles from being generated by damage of the inner sidewall of the process chamber by plasma, and drift distances of the particles can be reduced to inhibit the particles from reaching a substrate. | 12-31-2015 |
| 20150380219 | Mounting Stage and Plasma Processing Apparatus - According to one embodiment, in a mounting stage for mounting a target substrate subjected to processing with reducing radicals, the mounting stage includes a mounting surface covered with the target substrate in plan view, a non-mounting surface adjacent to the mounting surface, and a mounting part configured to hold the target substrate. The mounting part is projected from the mounting surface and holds the target substrate so as to form a space between a back surface of the target substrate and the mounting surface during the processing, and surface of the mounting surface and the non-mounting surface are covered with a material suppressing deactivation of reducing radicals. | 12-31-2015 |
| 20160196955 | WORKPIECE PROCESSING CHAMBER HAVING A ROTARY MICROWAVE PLASMA ANTENNA WITH SLOTTED SPIRAL WAVEGUIDE | 07-07-2016 |
| 20170236690 | PLASMA PROCESSING APPARATUS | 08-17-2017 |
| 156345420 | With magnetic field generating means for control of the etchant gas | 5 |
| 20090242131 | ECR PLASMA SOURCE - The invention relates to an ECR plasma source comprising a coaxial microwave supply line with an internal conductor and an external conductor, wherein the internal conductor with one end as the antenna passes through a vacuum flange in insulated fashion, which vacuum flange closes off an opening in the wall to the plasma space. A multipole magnet arrangement is provided coaxially with respect to the microwave supply line and its magnetic fields pass through the vacuum flange and form an annular-gap magnetic field in the plasma space coaxially with respect to the antenna. The antenna protrudes directly into the plasma space and, in comparison with the internal conductor, it has a radially larger antenna head at which an underside is provided parallel to the vacuum flange in such a way that an annular gap is formed between the vacuum flange and the underside and that the plasma space is delimited coaxially with respect to the antenna and radially outside the annular-gap magnetic field by means of a shield, whose end side facing away from the vacuum flange defines the plasma outlet opening. | 10-01-2009 |
| 20110232846 | MAGNETIC FIELD GENERATOR FOR MAGNETRON PLASMA - Disclosed is a magnetic field generator for magnetron plasma. The magnetic field generator is provided with a plurality of magnetic segments, and generates a predetermined multi-pole magnetic field around the periphery of a workpiece substrate within a process chamber. The strength of the multi-pole magnetic field is controlled so that the state of the multi-pole magnetic field is matched different plasma processes. Further, the pattern of the multi-pole magnetic field can be changed so as to match different sizes of the substrate. | 09-29-2011 |
| 20120186747 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus is provided with a processing chamber which is arranged inside a vacuum container and plasma is formed inside, a circular shape plate member made of a dielectric material arranged above the processing chamber through which an electric field is transmitted, and a cavity part having a cylindrical shape arranged above the plate member and the electric field is introduced inside, in which the cavity part is provided with a first cylindrical cavity part having a cylindrical shape cavity with a large diameter and having the plate member as the bottom face, a second cylindrical cavity part arranged above to be connected to the first cylindrical cavity part and having a cylindrical shape cavity with a small diameter, and a step portion for connecting these between the first and the second cylindrical cavity parts. | 07-26-2012 |
| 20140174660 | PLASMA PROCESSING APPARATUS - The microwave plasma processing apparatus includes a power feeding rod that applies high frequency wave for RF bias, the upper end of which is connected to a susceptor, and the lower end of which is connected to a high frequency output terminal of a matcher in a matching unit; a cylindrical external conductor that encloses around the power feeding rod serving as an internal conductor; and a coaxial line. The coaxial line is installed with a choke mechanism configured to block undesired microwave that enters the line from a plasma producing space in a chamber, and leakage of the microwave to an RF feeding line is prevented in the middle of the line, thereby suppressing the microwave leakage. | 06-26-2014 |
| 20140374025 | MICROWAVE PLASMA DEVICE - A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electromagnetic energy may be conditioned prior to entering the interior cavity to improve uniformity or stability of the electric field. The conditioning may include, but is not limited to, phase angle, field angle, and number of feeds into the interior cavity. | 12-25-2014 |
