| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 156345390 | With means to generate and to direct a reactive ion etchant beam at a workpiece | 6 |
| 20090294064 | FOCUS RING AND PLASMA PROCESSING APPARATUS - A focus ring that can eliminate the gap between a mounting stage and the focus ring in a plasma processing apparatus to prevent damage to a side wall of the mounting stage of a plasma processing apparatus and attachment of particles to a substrate to be processed resulting from spread of plasma. The focus ring has an annular shape and is provided in an outer peripheral edge portion of an upper surface of the mounting stage. The focus ring is comprised of a combination of a plurality of focus ring pieces formed by dividing the focus ring in a circumferential direction of the annular shape, and an annular band member that urges each of the focus ring pieces toward a center of the focus ring. | 12-03-2009 |
| 20120055633 | HIGH THROUGHPUT PHYSICAL VAPOR DEPOSITION APPARATUS AND METHOD FOR MANUFACTURE OF SOLID STATE BATTERIES - An apparatus for formation of element(s) of an electrochemical cell using a complete process. The apparatus includes a first work piece configured to a transfer device, a source of material in fluid form, a reaction region operably coupled to the source of material and a second work piece configured within a vicinity of the reaction region. The apparatus also has an energy source configured to the reaction region to subject a portion of the material to energy to substantially evaporate the portion of the material within a time period and cause deposition of a gaseous species derived from the evaporated material onto a surface region of the second work piece to form a thickness of material for a component of the solid state electrochemical device and a vacuum chamber to maintain at least the first and second work pieces, the reaction region, and the material within a vacuum environment. | 03-08-2012 |
| 20120267050 | PLASMA PROCESSING APPARATUS - A uniform plasma processing to a sample is performed by adjusting the distribution of the induced magnetic field in an inductively-coupled-plasma processing apparatus and correcting the plasma distribution on the sample. Between an induction coil and a dielectric window a conductor is provided along the induction coil and side by side with at least a part of the induction coil in its circumferential direction. The conductor is set up at a location where the intensity of the induced magnetic field generated from the induction coil is wished to be weakened and the relationship of Lp≧Lr is satisfied, letting the shortest distance from the induction coil to the surface of the conductor be Lr and letting the shortest distance from the induction coil to the plasma generated directly under the dielectric window be Lp. | 10-25-2012 |
| 20120312474 | METHODS OF AND HYBRID FACTORIES FOR THIN-FILM BATTERY MANUFACTURING - Methods of and hybrid factories for thin-film battery manufacturing are described. A method includes operations for fabricating a thin-film battery. A hybrid factory includes one or more tool sets for fabricating a thin-film battery. | 12-13-2012 |
| 20140262039 | METHOD OF FORMING ASYMMETRIC SPACERS AND METHODS OF FABRICATING SEMICONDUCTOR DEVICE USING ASYMMETRIC SPACERS - A method of fabricating asymmetrical spacers, structures fabricated using asymmetrical spacers and an apparatus for fabricating asymmetrical spacers. The method includes: forming on a substrate, a structure having a top surface and opposite first and second sidewalls and having a longitudinal axis parallel to the sidewalls; forming a conformal layer on the top surface of the substrate, the top surface of the structure and the sidewalls of the structure; tilting the substrate about a longitudinal axis relative to a flux of reactive ions, the flux of reactive ions striking the conformal layer at acute angle; and exposing the conformal layer to the flux of reactive ions until the conformal layer is removed from the top surface of the structure and the top surface of the substrate leaving a first spacer on the first sidewall and a second spacer on the second sidewall, the first spacer thinner than the second spacer. | 09-18-2014 |
| 20150114566 | LARGE AREA DEPOSITION IN HIGH VACUUM WITH HIGH THICKNESS UNIFORMITY - The invention relates to an effusing source for film deposition made of a reservoir comprising one hole characterized by the fact that the hole diameter is less than one order of magnitude than the mean free path of the molecules determined by the pressure and its thickness is at least one order of magnitude smaller than the diameter. Preferably the source has several holes. | 04-30-2015 |
