| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 156345370 | With heating or cooling means for apparatus part other than workpiece support | 32 |
| 20090020227 | Vacuum processing apparatus for semiconductor fabrication apparatus - A vacuum processing apparatus includes a vacuum processing chamber, a high-vacuum exhaust pump for exhausting the vacuum processing chamber in vacuum, a low-vacuum exhaust pump connected to the downstream side of the high-vacuum exhaust pump, a lower electrode having mounted thereon a substrate to be processed, and a cooling gas supply unit for supplying the cooling gas between the substrate and the lower electrode. The cooling gas supply unit includes a cooling gas supply system and a cooling gas supply line. The cooling gas supply line is connected, through a first waste gas valve, to a waste gas line for exhausting the cooling gas. The waste gas line is connected just above the high-vacuum exhaust pump through a second waste gas valve, and to the exhaust gas line between the high-vacuum exhaust pump and the low-vacuum exhaust pump through a third waste gas valve. | 01-22-2009 |
| 20090107635 | Corrosion-resistant multilayer ceramic member - The present invention relates to a corrosion-resistant multilayer ceramic member consisting at least of: a ceramic support substrate; an electrode layer formed on the ceramic support substrate; a power-supply member connected to the electrode layer; an insulating protection layer formed on the ceramic support substrate to cover the electrode layer; and a ceramic protection substrate of which at least a part is provided on the insulating protection layer. Thereby, there is provided a long-life corrosion-resistant multilayer ceramic member excellent in corrosion resistance even when exposed to a corrosive gas. | 04-30-2009 |
| 20090133839 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a processing chamber, a first radio frequency power supply for outputting a first radio frequency power, the first radio frequency power supply being electrically connected to a first electrode arranged in the processing chamber, a heater power supply for supplying electric power to a heating element provided in the first electrode, first and second power supply lines for electrically interconnecting the heating element and the heater power supply, and a filter circuit provided in the first and second power supply lines for attenuating radio frequency noises coming from the heating element. The filter circuit includes a first and a second air-core coil respectively provided on the first and the second power supply line at an initial stage of the filter circuit when viewed from the heating element, the air-core coils being in a coaxial relationship with each other and having substantially the same winding length. | 05-28-2009 |
| 20090145555 | PROCESSING APPARATUS, EXHAUST PROCESSING PROCESS AND PLASMA PROCESSING PROCESS - There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film). | 06-11-2009 |
| 20090205783 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus comprises a process chamber accommodating stacked substrates; a heating unit heating an inside of the process chamber to a predetermined temperature; a gas supply unit supplying predetermined process gas to the inside of the process chamber; and an exhaust unit exhausting the inside of the process chamber. The gas supply unit comprises: a gas supply nozzle having a straight pipe shape and installed in a stacked direction of the substrates; a metal pipe supporting the gas supply nozzle; and a manifold forming a lower part of the process chamber. The metal pipe comprises: a first part extending from an outside of the process chamber to the inside of the processes chamber through the manifold; and a second part connected to the first part and extending in the stacked direction of the substrates. The gas supply nozzle is fitted to and supported by the second part. | 08-20-2009 |
| 20090242129 | THERMAL PROCESSING APPARATUS AND PROCESSING SYSTEM - A heat treatment apparatus for heat-treating a silicon substrate includes a mounting table for mounting and heating the silicon substrate thereon, wherein a cover made of any of silicon, silicon carbide, and aluminum nitride is placed on an upper surface of the mounting table. By covering the upper surface of the mounting table by the cover made of silicon or the like, metal contamination of the lower surface of the silicon substrate is suppressed. | 10-01-2009 |
| 20100012274 | FOCUS RING, SUBSTRATE MOUNTING TABLE AND PLASMA PROCESSING APPARATUS HAVING SAME - A focus ring is placed on a substrate mounting table for mounting a target substrate thereon to surround the target substrate. The focus ring converges plasma on the target substrate when the target substrate is subjected to plasma processing. The focus ring is configured to create a temperature difference in its radial direction and over its full circumference during the plasma-processing of the target substrate. The focus ring also includes a radial outer region as a higher temperature region and a radial inner region as a lower temperature region. A groove is formed between the radial outer region and the radial inner region to extend over the full circumference of the focus ring. | 01-21-2010 |
| 20100193130 | PLASMA PROCESSING APPARATUS - In a plasma processing apparatus including a vacuum chamber, a sample table for mounting a member to be processed thereon, the sample table having a coolant path to control a temperature of the member to be processed, an electrostatic chuck power supply for electrostatically adsorbing the member to be processed on the sample table, and a plurality of gas hole parts provided in the sample table to supply heat transfer gas between the member to be processed and the sample table and thereby control a temperature of the member to be processed, each of the gas hole parts includes a boss formed of a dielectric, a sleeve, and a plurality of small tubes, and the small tubes are arranged in a range of 10 to 50% of a radius when measured from a center of the gas hole part toward outside. | 08-05-2010 |
| 20100263796 | Plasma Processing Apparatus - A plasma processing apparatus includes a processing chamber, a sample stage for mounting an object to be processed, a power supply, and at least one induction coil connected to the power supply. The induction coil is formed by connecting at least two identical coil elements in a parallel circuit-like arrangement so that current flows in each of the plurality of identical coil elements in a same direction when viewed from the sample stage. The induction coil is positioned so that a center thereof corresponds to a center of the object, and input ends of the coil elements are displaced circumferentially at equal angular intervals calculated by dividing 360° by the number of identical coil elements. | 10-21-2010 |
| 20100300621 | METHOD OF COOLING A WAFER SUPPORT AT A UNIFORM TEMPERATURE IN A CAPACITIVELY COUPLED PLASMA REACTOR - A method of transferring heat from or to a workpiece support in an RF coupled plasma reactor includes placing coolant in an internal flow channel that is located inside the workpiece support and transferring heat from or to the coolant by circulating the coolant through a refrigeration loop in which the internal flow channel of the workpiece support constitutes an evaporator of the refrigeration loop. The method further includes maintaining thermal conditions of the coolant inside the evaporator within a range in which heat exchange between the workpiece support and the coolant is primarily or exclusively through the latent heat of vaporization of the coolant. | 12-02-2010 |
| 20100326600 | PLASMA DRY ETCHING APPARATUS HAVING COUPLING RING WITH COOLING AND HEATING UNITS - A plasma dry etching apparatus includes a pedestal in a process chamber, the pedestal being configured to support a wafer, a cathode electrode and a plate electrode in the process chamber, the cathode and plate electrodes being configured to apply radio-frequency (RF) power, an edge ring on an edge of the pedestal, a coupling ring having a first side on the pedestal and a second side on the edge ring, an edge cooling unit in the coupling ring, the edge cooling unit being configured to cool the edge ring to drop a temperature of an extreme edge of the wafer, and an edge heating unit in the coupling ring, the edge heating unit being configured to heat the edge ring to raise the temperature of an extreme edge of the wafer. | 12-30-2010 |
| 20110108195 | Temperature adjusting mechanism and semiconductor manufacturing Appratus using temperature adjusting mechanism - Provided is a temperature adjusting mechanism, which can keep deviation of a temperature of a portion in contact with the temperature adjusting mechanism to be small by controlling the temperature accurately at a high speed. A semiconductor manufacturing apparatus using such temperature adjusting mechanism is also provided. A cooling jacket ( | 05-12-2011 |
| 20110209830 | Take-Up Vacuum Processing Apparatus - [Object] To provide a take-up vacuum processing apparatus that prevents breakage due to heat generation and occurrence of dielectric breakdown and is suitable for life extension. | 09-01-2011 |
| 20120012254 | GATE VALVE CLEANING METHOD AND SUBSTRATE PROCESSING SYSTEM - A gate valve cleaning method that can clean a gate valve that brings an atmospheric transfer chamber and an internal pressure variable transfer chamber that transfer a substrate into communication with each other or shuts them off from each other without bringing about a decrease in the throughput of a substrate processing system. Before the gate valve brings the atmospheric transfer chamber and the internal pressure variable transfer chamber into communication with each other, the pressure in the internal pressure variable transfer chamber is increased so that the pressure in the internal pressure variable transfer chamber can become higher than the pressure in the atmospheric transfer chamber. | 01-19-2012 |
| 20120043022 | PLASMA CHAMBER TOP PIECE ASSEMBLY - A plasma processing system for processing a substrate is described. The plasma processing system includes a bottom piece including a chuck configured for holding the substrate. The plasma processing system also includes an induction coil configured to generate an electromagnetic field in order to create a plasma for processing the substrate. The plasma processing system also includes a cover covering at least the induction coil and a heating and cooling system. The top piece coupled to the bottom piece and at least partially covered by the cover, the top piece comprising a first shelf, a second shelf, and a wall; the wall being disposed between the first shelf and the second shelf; a cavity being formed between the first shelf and the second shelf, and between the wall and a portion of the cover; the heating and cooling system being disposed inside the cavity; Wherein, the heating and cooling system is substantially shielded from the electromagnetic field by the top piece, and the top piece substantially complies with a set of SEMI ergonomic safety standards for a part handled by a single person. | 02-23-2012 |
| 20120090784 | CHAMBER LID HEATER RING ASSEMBLY - Embodiments of the invention generally provide a lid heater for a plasma processing chamber. In one embodiment, a lid heater assembly is provided that includes a thermally conductive base. The thermally conductive base has a planar ring shape defining an inner opening. The lid heater assembly further includes a heating element disposed on the thermally conductive base, and an insulated center core disposed across the inner opening of the thermally conductive base. | 04-19-2012 |
| 20120118505 | PLASMA PROCESSING APPARATUS AND COOLING DEVICE FOR PLASMA PROCESSING APPARATUS - A coolant flow path for cooling a dielectric window of a side wall of a processing container of the plasma processing apparatus is provided. A coolant flows in a liquid or gaseous state in the coolant flow path without phase transition. At least a portion of the coolant flow path extending in a circumferential direction of the side wall has a cross-sectional area decreased toward downstream from upstream. | 05-17-2012 |
| 20120273135 | ELECTRODE UNIT, SUBSTRATE PROCESSING APPARATUS, AND TEMPERATURE CONTROL METHOD FOR ELECTRODE UNIT - An electrode unit is disposed in a substrate processing apparatus including a processing chamber for processing a substrate by plasma. The electrode unit includes an electrode layer having a surface exposed to inside of the processing chamber and an opposing surface disposed at the opposite side of the exposed surface, a heating layer and a cooling layer that the electrode layer, the heating layer and the cooling layer are disposed in said order from the processing chamber. The heating layer covers the opposing surface of the electrode layer while the cooling layer covers the opposing surface of the electrode layer via the heating layer, and a heat transfer layer filled up with a heat transfer medium is interposed between the heating layer and the cooling layer. | 11-01-2012 |
| 20120325407 | PLASMA CONFINEMENT RINGS HAVING REDUCED POLYMER DEPOSITION CHARACTERISTICS - Plasma confinement ring assemblies are provided that include confinement rings adapted to reach sufficiently high temperatures on plasma-exposed surfaces of the rings to avoid polymer deposition on those surfaces. The plasma confinement rings include thermal chokes adapted to localize heating at selected portions of the rings that include the plasma exposed surfaces. The thermal chokes reduce heat conduction from those portions to other portions of the rings, which causes selected portions of the rings to reach desired temperatures during plasma processing. | 12-27-2012 |
| 20130105085 | PLASMA REACTOR WITH CHAMBER WALL TEMPERATURE CONTROL | 05-02-2013 |
| 20130306239 | PLASMA CHAMBER TOP PIECE ASSEMBLY - A plasma processing system for processing a substrate is described. The plasma processing system includes a bottom piece including a chuck configured for holding the substrate. The plasma processing system also includes an induction coil configured to generate an electromagnetic field in order to create a plasma for processing the substrate; and an optimized top piece coupled to the bottom piece, the top piece further configured for a heating and cooling system. Wherein, the heating and cooling system is substantially shielded from the electromagnetic field by the optimized top piece, and the optimized top piece can substantially be handled by a single person. | 11-21-2013 |
| 20140020835 | SYMMETRICAL INDUCTIVELY COUPLED PLASMA SOURCE WITH SYMMETRICAL FLOW CHAMBER - A plasma reactor has an overhead multiple coil inductive plasma source with symmetric RF feeds and a symmetrical chamber exhaust with plural struts through the exhaust region providing access to a confined workplace support. A grid may be included for masking spatial effects of the struts from the processing region. | 01-23-2014 |
| 20140060738 | APPARATUS FOR TREATING SUBSTRATE - Provided is a substrate treating apparatus using plasma. A substrate treating apparatus includes a chamber having a treating space therein, a support member disposed in the chamber to support the substrate, a gas supply unit supplying a gas into the chamber, and a plasma source disposed on an upper portion of the camber, the plasma source including an antenna generating plasma from the gas supplied into the chamber, wherein the chamber includes a housing having an opened top surface, the housing having a treating space therein, and a dielectric substance assembly covering the opened top surface of the housing, and wherein the dielectric substance assembly includes a dielectric substance window and a reinforcement film having strength greater than that of the dielectric substance window. | 03-06-2014 |
| 20140083615 | ANTENNA ASSEMBLY AND A PLASMA PROCESSING CHAMBER HAVING THE SAME - A plasma processing chamber includes a chamber body having a substrate support on which the substrate to be processed is placed, a dielectric window forming a ceiling of the chamber body, an inductive antenna set on a upper part of the dielectric window and configured to supply an electromotive force generating plasmas into the chamber body, a cooling water supplier configured to supply cooling water into the inductive antenna, a heating plate set on a upper part of the inductive antenna, and a heat conductive member filled in a space between the heating plate and the dielectric window to contact the heating plate, the inductive antenna and the dielectric window, wherein the heat conductive member makes the dielectric window to have a uniform heat distribution through the heat conduction between the inductive antenna and the dielectric window, and the heat conduction between the heating plate and the dielectric window. | 03-27-2014 |
| 20140102641 | FIELD ENHANCED INDUCTIVELY COUPLED PLASMA PROCESSING APPARATUS AND PLASMA FORMING METHOD - Disclosed herein is a field enhanced inductively coupled plasma processing apparatus including a process chamber having a dielectric lid, and a plasma source assembly disposed above the dielectric lid. The plasma source assembly includes at least one horizontal inductive coil configured to inductively couple RF energy into the process chamber to form and maintain plasma in the process chamber, at least one power applying electrode electrically connected to the horizontal inductive coil to capacitively couple the RF energy into the process chamber, a first positioning mechanism coupled to the power applying electrode to change a horizontal position of the power applying electrode, and an RF generator coupled to the at least one power applying electrode. The apparatus further includes a vertical inductive coil connected to the horizontal inductive coil, and a second positioning mechanism shifting an entire vertical position of the vertical inductive coil or changing the pitch thereof. | 04-17-2014 |
| 20140367046 | ENHANCED PLASMA SOURCE FOR A PLASMA REACTOR - Embodiments of an apparatus having an improved coil antenna assembly that can provide enhanced plasma in a processing chamber is provided. The improved coil antenna assembly enhances positional control of plasma location within a plasma processing chamber, and may be utilized in etch, deposition, implant, and thermal processing systems, among other applications where the control of plasma location is desirable. In one embodiment, an electrode assembly configured to use in a semiconductor processing apparatus includes a RF conductive connector, and a conductive member having a first end electrically connected to the RF conductive connector, wherein the conductive member extends outward and vertically from the RF conductive connector. | 12-18-2014 |
| 20150013911 | MICROWAVE PLASMA PROCESSING APPARATUS, SLOT ANTENNA, AND SEMICONDUCTOR DEVICE - Disclosed is a microwave plasma processing apparatus. The microwave plasma processing apparatus includes a coaxial waveguide installed in a through hole which is formed in the center side portion in the intermediate metal body to extend continuously through the cooling plate and the intermediate metal plate. The coaxial waveguide includes an inner conductor, an intermediate conductor and an outer conductor. Each of a space between the inner conductor installed in a hollow portion of the intermediate conductor and the intermediate conductor and a space between the intermediate conductor installed in a hollow portion of the outer conductor and the outer conductor transmits microwaves. A difference between an inner diameter of the outer conductor and an outer diameter of the intermediate conductor is larger than a difference between an outer diameter of the inner conductor and an inner diameter of the intermediate conductor. | 01-15-2015 |
| 20150013912 | MICROWAVE PLASMA PROCESSING APPARATUS, SLOT ANTENNA, AND SEMICONDUCTOR DEVICE - A microwave plasma processing apparatus includes an inner slow-wave plate installed above a first slot in an inner waveguide which transmits microwaves to the first slot by transmitting the microwaves in a center side space, which is positioned closer to the center than the convex portion in the space between the slot plate and the intermediate metal body, through the space between the inner conductor and the intermediate conductor. An outer slow-wave plate is installed above a second slot in an outer waveguide which transmits microwaves to the second slot by transmitting the microwaves in an outer periphery side space, which is positioned closer to an outer periphery than the convex portion in the space between the slot antenna plate and the intermediate metal body, sequentially through the space between the intermediate conductor and the outer conductor, and the space between the intermediate metal body and cooling plate. | 01-15-2015 |
| 20150053348 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a mounting stage on which a substrate is mounted, a focus ring arranged around a periphery of the mounting stage, a plurality of magnetic members arranged at a surface of the focus ring and a surface of the mounting stage facing opposite each other, and a temperature adjustment unit configured to adjust a temperature of the focus ring by introducing a heat transfer gas between the surface of the focus ring and the surface of the mounting stage facing opposite each other. | 02-26-2015 |
| 20150090403 | Plasma Process and Reactor for Treating Metallic Pieces - The plasma reactor defines a reaction chamber provided with a support for the metallic pieces and an anode-cathode system, and a heating means is mounted externally to said plasma reactor. The plasma process, for a cleaning operation, includes the steps of connecting the support to the grounded anode and the cathode to a negative potential of a power source; feeding an ionizable gaseous charge into the reaction chamber and heating the latter at vaporization temperatures of piece contaminants; applying an electrical discharge to the cathode; and providing the exhaustion of the gaseous charge and contaminants. A subsequent heat treatment includes the steps of: inverting the energization polarity of the anode-cathode system; feeding a new gaseous charge to the reaction chamber and maintaining it heated; applying an electrical discharge to the cathode; and exhausting the gaseous charge from the reaction chamber. | 04-02-2015 |
| 20150114565 | APPARATUS FOR TREATING SUBSTRATE - Provided is an apparatus for treating a substrate which is capable of uniformly controlling a temperature of a support plate. The apparatus for treating the substrate includes a chamber having a treating space with an opened top surface, a support unit disposed within the chamber to support the substrate, a dielectric assembly disposed on the opened top surface of the chamber to cover the opened top surface, and a plasma source disposed above the dielectric assembly, the plasma source including an antenna generating plasma from a gas supplied into the chamber. The dielectric assembly includes a dielectric window, and heating units each of which is formed of a non-metallic material, the heating units being disposed on a top surface of the dielectric window to heat the dielectric window. | 04-30-2015 |
| 20150368800 | APPARATUS AND METHODS FOR PULSED PHOTO-EXCITED DEPOSITION AND ETCH - Embodiments of the invention provide methods for processing a substrate within a processing chamber. In one embodiment, the method comprises providing a precursor gas mixture into the processing chamber, the precursor gas mixture comprising a deposition precursor gas and an etch precursor gas, subjecting the precursor gas mixture to a thermal energy from a heat source to deposit a material layer on a surface of the substrate, wherein the thermal energy is below the minimum required for pyrolysis of the etch precursor gas, and after the material layer is formed on the surface of the substrate, subjecting the precursor gas mixture to a photon energy from a radiation source, the photon energy having a wavelength and a power level selected to promote photolytic dissociation of the etch precursor gas over the deposition precursor gas and etch a portion of the material layer from the surface of the substrate. | 12-24-2015 |
