| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 156345350 | With plasma generation means remote from processing chamber | 39 |
| 20080216958 | Plasma Reaction Apparatus Having Pre-Seasoned Showerheads and Methods for Manufacturing the Same - Plasma reaction apparatus having pre-seasoned showerheads and methods for pre-seasoning a showerhead of a plasma reaction apparatus are provided. In an embodiment, a method for seasoning a showerhead prior to installation in a plasma reaction apparatus comprises cleaning the showerhead, positioning the showerhead in a deposition chamber, and forming a continuous, substantially uniform protective layer on the showerhead. | 09-11-2008 |
| 20090008034 | PLASMA PROCESSING APPARATUS - A plasma generation chamber and a processing chamber are isolated from each other by a barrier wall member disposed between them. The barrier wall member includes two plate members and stacked one on top of the other over a gap, a plurality of through holes and, via which hydrogen radicals are allowed to pass, are respectively formed at the plate member and the plate member. The through holes at one plate member are formed with an offset relative to the through holes formed at the other plate member and the plate members are both constituted of an insulating material that does not transmit ultraviolet light. | 01-08-2009 |
| 20090065147 | Plasma processing apparatus - This invention is a plasma processing apparatus including: a processing vessel having: a plasma generating space in which a plasma is generated, and a processing space in which a substrate is placed and is subjected to a plasma process; a gas supplying plate arranged in the processing vessel so as to separate the plasma generating space and the processing space in the processing vessel; a process-gas supplying hole provided in the gas supplying plate for supplying a process gas into the processing vessel; a plurality of openings provided in the gas supplying plate for communicating the plasma generating space with the processing space; and a heat transfer member extending from a central region of the gas supplying plate to a peripheral region of the gas supplying plate, the heat transfer member having heat transfer rate higher than that of a material forming the gas supplying plate. | 03-12-2009 |
| 20090084502 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a barrier wall member disposed between a plasma generation chamber and a processing chamber to separate the plasma generation chamber from the processing chamber. The barrier wall member assumes a fin structure achieved by disposing in a radial pattern numerous plate-like fin members extending from a central area thereof toward a peripheral edge. An upper end portion of each fin member overlaps a lower end portion of an adjacent fin member. The fin members are disposed with gaps formed between them and are made to range upward with a tilt along the circumferential direction. | 04-02-2009 |
| 20090133838 | Plasma Processor Apparatus - An electromagnetic field generating coil included in plasma processing apparatus is realized with a balanced transmission line. Conductors constituting the balanced transmission line are disposed vertically above a wafer. A uniform electromagnetic field is generated in parallel with the wafer using the balanced transmission line. A gas inlet is formed above the balanced transmission line so that a gas will flow into the wafer after passing through the electromagnetic field generated around the balanced transmission line. The balanced transmission line may be formed spirally. | 05-28-2009 |
| 20090145554 | Procedure and device for the production of a plasma - The present invention concerns a procedure for the production of a plasma that is at least co-produced in the vacuum chamber ( | 06-11-2009 |
| 20090188626 | PLASMA JET DEVICE - A plasma jet device, comprising a dielectric container comprising a gas inlet and a plasma jet outlet, and an electrode. The electrode, which is completely covered by dielectric material, is inserted into the dielectric container and connected to the power supply. The dielectric material is in the form of a hollow tube with one end closed and another end opened. The power supply is connected to the electrode from the open end of the dielectric material. The dielectric material can also be a coated dielectric layer, which covers the electrode completely except one end for connecting to the power supply. A grounding electrode can be added downstream, outside the dielectric container or the nozzle. There also can be multiple electrodes inside the dielectric container arranged in a row or multiple rows, or in the shape of a circle or disk. | 07-30-2009 |
| 20090308537 | SUBSTRATE SUPPORT DEVICE AND PLASMA PROCESSING APPARATUS - There is provided a substrate support device capable of preventing powder dust from being produced. A thermoconductive intermediate member is interposed between a base table and a substrate support table and has a communication aperture path for communicating the aperture path of the base table with the aperture path of the substrate support table. An elastic member such as bellows tube is disposed in the communication aperture path of the thermoconductive intermediate member, for insulating the thermoconductive intermediate member from the inert gas which flows through the communication aperture path. | 12-17-2009 |
| 20100096086 | Device for the Pre- and/or Aftertreatment of a Component Surface by Means of a Plasma Jet - The invention relates to a device for the pre- and/or aftertreatment of a component surface by means of a plasma jet, particularly by means of a jet of an atmospheric plasma, with a plasma head ( | 04-22-2010 |
| 20100108264 | BI-LAYER, TRI-LAYER MASK CD CONTROL - A method for controlling critical dimension (CD) of etch features in an etch layer disposed below a functionalized organic mask layer disposed below an intermediate mask layer, disposed below a patterned photoresist mask, which forms a stack is provided. The intermediate mask layer is opened by selectively etching the intermediate mask layer with respect to the patterned photoresist mask. The functionalized organic mask layer is opened. The functionalized organic mask layer opening comprises flowing an open gas comprising COS, forming a plasma, and stopping the flowing of the open gas. The etch layer is etched. | 05-06-2010 |
| 20100154996 | PLASMA CONFINEMENT STRUCTURES IN PLASMA PROCESSING SYSTEMS - A movable plasma confinement structure configured for confining plasma in a plasma processing chamber during plasma processing of a substrate is provided. The movable plasma confinement structure includes a movable plasma-facing structure configured to surround the plasma. The movable plasma confinement structure also includes a movable electrically conductive structure disposed outside of the movable plasma-facing structure and configured to be deployed and retracted with the movable plasma-facing structure as a single unit to facilitate handling of the substrate. The movable electrically conductive structure is radio frequency (RF) grounded during the plasma processing. The movable plasma-facing structure is disposed between the plasma and the movable electrically conductive structure during the plasma processing such that RF current from the plasma flows to the movable electrically conductive structure through the movable plasma-facing structure during the plasma processing. | 06-24-2010 |
| 20100193129 | APPARATUS FOR GENERATING DIELECTRIC BARRIER DISCHARGE GAS - An apparatus for generating a dielectric-barrier discharge gas including a high-energy radical gas, at a high density and with high efficiency. A flat-plate-like first electrode and a flat-plate-like second electrode are arranged in opposite positions, and a dielectric body is arranged between the two electrodes. A discharge space is located between the first electrode and the dielectric body, within a gap between the first electrode and the dielectric body. The discharge space has three sides which are gas shielded and a fourth side which opens to end surfaces of the first electrode and the dielectric body. A cooling section cools at least the first electrode and a gas supply section supplies a raw material gas to the discharge space part. A dielectric-barrier discharge is generated in the discharge space part by applying an AC voltage to the first electrode and the second electrode. | 08-05-2010 |
| 20100258247 | Atmospheric pressure plasma generator - According to the present invention, a long electric discharge path is formed, and a workpiece is irradiated with an atmospheric plasma of a long rectangular area. An argon flow at a first gas outlet forms argon plasma by high-frequency electric power between the first and second electrodes, and the plasma is jetted as an auxiliary plasma in the longitudinal direction from the left end of a primary plasma-generating zone. Another argon flow at a second gas outlet forms argon plasma by high-frequency electric power between the third and fourth electrodes, and the plasma is jetted as an auxiliary plasma in the longitudinal direction from the right end of the primary plasma-generating zone. When high-frequency electric power is applied to the first and third electrodes, electric discharge occurs between two argon plasmas flowing from both ends of the primary plasma-generating zone. Through the electric discharge, the discharge state is maintained in the entire primary plasma-generating zone. Then, oxygen and argon are supplied through gas mixture (argon and oxygen)-supplying pipes to the plasma-generating zone, oxygen plasma is generated. The oxygen plasma is jetted through 170 second holes disposed at the bottom side wall of the cylindrical section to the outside in a direction normal to the side wall, whereby a workpiece is irradiated with oxygen plasma in a long belt-like area having a length of 50 cm. | 10-14-2010 |
| 20110005683 | PLASMA GENERATING APPARATUS - Provided is a plasma generating apparatus. The plasma generating apparatus includes a vacuum chamber, an ElectroStatic Chuck (ESC), an antenna unit, and an antenna cover. The vacuum chamber has a hollow interior and is sealed at a top. The ESC disposed at an internal center of the vacuum chamber receives an external bias Radio Frequency (RF). The antenna unit covers and seals the through-hole of an insulating vacuum plate. The antenna cover covers a top of the antenna unit and has a gas injection port. | 01-13-2011 |
| 20110005684 | PLASMA PROCESSING APPARATUS - The present invention relates to a plasma processing apparatus in which it is possible to efficiently perform maintenance of a processing chamber. A plasma processing apparatus | 01-13-2011 |
| 20110094683 | RF FEED STRUCTURE FOR PLASMA PROCESSING - Apparatus for plasma processing are provided. In some embodiments, an RF feed structure includes a first RF feed to couple RF power to a plurality of symmetrically arranged stacked first RF coil elements; a second RF feed coaxially disposed about the first RF feed and electrically insulated therefrom, the second RF feed to couple RF power to a plurality of symmetrically arranged stacked second RF coil elements coaxially disposed with respect to the first RF coil elements. In some embodiments, a plasma processing apparatus includes a first RF coil; a second RF coil coaxially disposed with respect to the first RF coil; a first RF feed coupled to the first RF coil to provide RF power thereto; and a second RF feed coaxially disposed with respect to the first RF feed and electrically insulated therefrom, the second RF feed coupled to the second RF coil to provide RF power thereto. | 04-28-2011 |
| 20110108194 | PLASMA PROCESSING APPARATUS - The invention provides a plasma processing apparatus in which ring-like conductors | 05-12-2011 |
| 20110132543 | BRUSH TYPE PLASMA SURFACE TREATMENT APPARATUS - A brush type plasma surface treatment apparatus is provided. The brush type plasma surface treatment apparatus includes a frame for plasma generation units, a plurality of plasma generation units arranged in an array at the lower edge of the frame, a gas supply hole installed on one side of an upper edge of the frame and supplying a gas to the plurality of plasma generation units, and a power supply unit installed on the other side of the upper edge of the frame and supplying power to the plurality of plasma generation units. | 06-09-2011 |
| 20110146909 | METHODS FOR WET CLEANING QUARTZ SURFACES OF COMPONENTS FOR PLASMA PROCESSING CHAMBERS - Methods for wet cleaning quartz surfaces of components for plasma processing chambers in which semiconductor substrates are processed, such as etch chambers and resist stripping chambers, include contacting the quartz surface with at least one organic solvent, a basic solution and different acid solutions, so as to remove organic and metallic contaminants from the quartz surface. The quartz surface is preferably contacted with one of the acid solutions at least two times. | 06-23-2011 |
| 20110259523 | PLASMA PROCESSING APPARATUS - A microwave plasma processing apparatus includes a processing chamber; a microwave source that outputs a microwave; a dielectric plate that radiates the microwave output from the microwave source to the inside of the processing chamber; and a metal electrode provided on the side of a plasma-facing surface of the dielectric plate so as to be adjacent to the dielectric plate. Here, a part of the dielectric plate is exposed to the inside of the processing chamber at an outside of the metal electrode. Further, a cell area is defined as a virtual area that divides the ceiling surface of the processing chamber and is formed by two straight lines parallel to one diagonal line of the metal electrode and two straight lines parallel to the other diagonal line of the metal electrode and the cell area is a minimum rectangular area including the metal electrode and the dielectric plate. | 10-27-2011 |
| 20110284167 | PLASMA PROCESSING EQUIPMENT AND PLASMA GENERATION EQUIPMENT - Disclosed is ICP plasma processing equipment wherein uniformity of plasma and plasma ignition are improved. Plasma processing equipment comprises a vacuum processing chamber ( | 11-24-2011 |
| 20110297319 | Reduction of Copper or Trace Metal Contaminants in Plasma Electrolytic Oxidation Coatings - A method for creating an oxide layer having a reduced copper concentration over a surface of an object comprising aluminum and copper for use in a semiconductor processing system. The oxide layer produced using a plasma electrolytic oxidation process has a reduced copper peak concentration, which decreases a risk of copper contamination, and includes magnesium oxides that can be converted to magnesium halide upon exposure to an excited halogen-comprising gas or halogen-comprising plasma to increase the erosion/corrosion resistance of the oxide layer. | 12-08-2011 |
| 20110303363 | PLASMA PROCESSING APPARATUS - A microwave plasma processing apparatus for plasma-processing a substrate by exciting a gas by the microwave includes a processing container formed of metal, a microwave source for outputting the microwave, a first dielectric member that faces an inner wall of the processing container and for transmitting the microwave output from the microwave source into the processing container, and a second dielectric member that is provided on an inner surface of the processing container and restrains the microwave from propagating along the inner surface of the processing container. | 12-15-2011 |
| 20120312473 | HIGH FREQUENCY POWER DISTRIBUTION DEVICE AND SUBSTRATE PROCESSING APPARATUS USING SAME - A high frequency power distribution device includes: a distribution member for uniformly dividing a high frequency power into divided high frequency powers; coaxial transmission lines through which the divided high frequency powers are introduced to the parallel plate electrodes; and an impedance control mechanism which controls an input impedance to decrease a current value. The distribution member includes: a high frequency power input unit for inputting the high frequency power to an input point; and a plurality of high frequency power output units spaced from each other at a regular interval, and each of the coaxial transmission lines are connected to one of the high frequency power output units, and the impedance control mechanism is provided at the high frequency power input unit. | 12-13-2012 |
| 20130014897 | Apparatus And Method For Controlling Relative Particle Concentrations In A Plasma - An apparatus for controlling a plasma etching process includes plasma control structure that can vary a size of a plasma flow passage, vary a speed of plasma flowing through the plasma flow passage, vary plasma concentration flowing through the plasma flow passage, or a combination thereof. | 01-17-2013 |
| 20130098555 | ELECTRON BEAM PLASMA SOURCE WITH PROFILED CONDUCTIVE FINS FOR UNIFORM PLASMA GENERATION - In a plasma reactor employing a planar electron beam as a plasma source, the electron beam source chamber has an internal conductive fin that is profiled along a direction transverse to the beam propagation diction and parallel to the plane of the electron beam, in order to correct electron beam density distribution. | 04-25-2013 |
| 20130192759 | PLASMA PROCESSING DEVICE - A plasma processing device according to the present invention includes a plasma processing chamber, a plasma producing chamber communicating with the plasma processing chamber, a radio-frequency antenna for producing plasma, a plasma control plate for controlling the energy of electrons in the plasma, as well as an operation rod and a moving mechanism for regulating the position of the plasma control plate. In this plasma processing device, the energy distribution of the electrons of the plasma produced in the plasma producing chamber can be controlled by regulating the distance between the radio-frequency antenna 16 and the plasma control plate by simply moving the operation rod in its longitudinal direction by the moving mechanism. Therefore, a plasma process suitable for the kind of gas molecules to be dissociated and/or their dissociation energy can be easily performed. | 08-01-2013 |
| 20140262038 | PROCESSING SYSTEMS AND METHODS FOR HALIDE SCAVENGING - Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools. | 09-18-2014 |
| 20140318710 | APPARATUS FOR GENERATING PLASMA USING ELECTROMAGNETIC FIELD APPLICATOR AND APPARATUS FOR TREATING SUBSTRATE COMPRISING THE SAME - A plasma generating apparatus is provided which includes an RF power which provides an RF signal; a plasma chamber which generates a plasma using the RF signal; a plurality of isolation loops which are formed along a circumference of the plasma chamber; and a plurality of electromagnetic applicators which are respectively coupled with the isolation loops and applies an electromagnetic field to the plasma chamber in response to the RF signal, wherein impedance values of the electromagnetic applicators increase according to an increase in a distance from an input terminal. | 10-30-2014 |
| 20140352889 | APPARATUS FOR PROCESSING A SEMICONDUCTOR WORKPIECE - An apparatus for processing a semiconductor workpiece includes a first chamber having a first plasma production source and a first gas supply for introducing a supply of gas into the first chamber, a second chamber having a second plasma production source and a second gas supply for introducing a supply of gas into the second chamber, a workpiece support positioned in the second chamber, and a plurality of gas flow pathway defining elements for defining a gas flow pathway in the vicinity of the workpiece when positioned on the workpiece support. The gas flow path defining elements include at least one wafer edge region protection element for protecting the edge of the wafer and/or a region outwardly circumjacent to the edge of the wafer, and at least one auxiliary element spaced apart from the wafer edge region protection element to define the gas flow pathway. | 12-04-2014 |
| 20140367045 | Hammerhead TCP Coil Support for High RF Power Conductor Etch Systems - The chamber, having a ceramic window disposed in a ceiling of the chamber is provided. Included is a ceramic support having a plurality of spokes that extend from a center region to an outer periphery, and each of the spokes include a hammerhead shape that radially expands the ceramic support in a direction that is away from an axis of a spoke. Also included is a plurality of screw holes disposed through the ceramic support. The plurality of screw holes defined to enable screws to connect to a TCP coil having an inner and outer coil. The outer coil is to be disposed under the hammerhead shape of each of the spokes, and a radial gap is defined between each of the hammerhead shapes. The radial gap defines a non-continuous ring around the outer coil. A plurality of screws are disposed through the screw holes for attaching the TCP coil. | 12-18-2014 |
| 20150144264 | PLASMA GENERATING APPARATUS USING MUTUAL INDUCTIVE COUPLING AND SUBSTRATE TREATING APPARATUS COMPRISING THE SAME - Provided are a plasma generating apparatus using mutual inductive coupling and a substrate treating apparatus including the same. According to an embodiment of the present invention, a plasma generating apparatus includes: an RF power supply providing an RF signal; a plurality of electromagnetic field applying units inducing an electromagnetic field by receiving the RF signal; and a reactance element connected to a ground terminal of the electromagnetic field applying unit, wherein each of the electromagnetic field applying units may include a plurality of mutually-inductively coupled coils. | 05-28-2015 |
| 20150303032 | Inductive Plasma Source with High Coupling Efficiency - A method and apparatus are provided for processing a substrate with a radiofrequency inductive plasma in the manufacture of a device. The inductive plasma is maintained with an inductive plasma applicator having one or more inductive coupling elements. There are thin windows between the inductive coupling elements and the interior of the processing chamber. Various embodiments have magnetic flux concentrators in the inductive coupling element and feed gas holes interspersed among the inductive coupling elements. The thin windows, magnetic flux concentrators, and interspersed feed gas holes are useful to effectuate uniform processing, high power transfer efficiency, and a high degree of coupling between the applicator and plasma. In some embodiments, capacitive current is suppressed using balanced voltage to power an inductive coupling element. | 10-22-2015 |
| 20160013024 | SEMICONDUCTOR REACTION CHAMBER WITH PLASMA CAPABILITIES | 01-14-2016 |
| 20160020135 | PLACING BED STRUCTURE, TREATING APPARATUS USING THE STRUCTURE, AND METHOD FOR USING THE APPARATUS - Provided is a holding stage structure which holds a substrate and disposed in a process chamber that is vacuum-evacuatable and allows a predetermined process to be performed on the substrate therein. The holding stage structure includes: a holding stage body on which the substrate is placed; an elevation pin mechanism lowering the substrate on the holding stage body or raising the substrate from the holding stage body; and a stepped portion formed on the holding stage body so that a peripheral portion of a rear surface of the substrate placed on the holding stage body is exposed to a processing gas supplied into the process chamber. | 01-21-2016 |
| 20160118226 | HALL EFFECT ENHANCED CAPACITIVELY COUPLED PLASMA SOURCE - Embodiments disclosed herein include a plasma source for abating compounds produced in semiconductor processes. The plasma source has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the cylindrical electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created. | 04-28-2016 |
| 156345360 | By microwave | 3 |
| 20100224324 | PLASMA GENERATING APPARATUS, PLASMA GENERATING METHOD AND REMOTE PLASMA PROCESSING APPARATUS - A compact plasma generating apparatus providing high efficiency of plasma excitation is presented. A plasma generating apparatus ( | 09-09-2010 |
| 20110240223 | SUBSTRATE PROCESSING SYSTEM - There is provided a substrate processing system having high maintainability by widening a gap between various processing apparatuses connected with side surfaces of transfer modules and capable of achieving sufficient productivity by avoiding deterioration in throughput. The substrate processing system for manufacturing an organic EL device by forming a multiple number of layers including, e.g., an organic layer on a substrate includes at least one transfer module configured to be evacuable and arranged along a straight transfer route. Within the transfer module, a multiple number of loading/unloading areas for loading/unloading the substrate with respect to a processing apparatus and at least one stocking area positioned between the loading/unloading areas are alternately arranged along the transfer route in series, and the processing apparatus is connected with a side surface of the transfer module at a position facing each of the loading/unloading areas. | 10-06-2011 |
| 20140299272 | PLASMA GENERATION DEVICE AND PLASMA PROCESSING APPARATUS - There is provided a plasma generation device, comprising: a waveguide configured to propagate a microwave; a plasma generation vessel connected to the waveguide; and a dielectric window interposed between the waveguide and the plasma generation vessel to introduce the microwave propagated by the waveguide into the plasma generation vessel. The plasma generation vessel is sphere-shaped and is disposed adjacent to a processing vessel configured to accommodate a substrate, and an interior of the plasma generation vessel is in communication with an interior of the processing vessel. | 10-09-2014 |
