| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 156345300 | With mechanical mask, shield or shutter for shielding workpiece | 53 |
| 20090056874 | LOWER ELECTRODE ASSEMBLY FOR PROCESSING SUBSTRATES - A lower electrode assembly includes an insulator and a lower electrode material. The lower electrode material includes a peripheral portion having three level surfaces. The first level surface supports a substrate having a predetermined width and length. The second level surface has a width that corresponds to the predetermined width of the substrate plus a first increment and a length that correspond to the predetermined length of the substrate plus a second increment. The third level surface has a lower height than the second level surface. The insulator is provided horizontally on the second level surface and third level surface. | 03-05-2009 |
| 20100024978 | STRESS ENGINEERING FOR CAP LAYER INDUCED STRESS - Improved layouts take better advantage of desirable cap-layer induced transverse and vertical stress. In one aspect, roughly described, a tensile strained cap material overlies the transistor channels in the N-channel diffusion regions but not the P-channel diffusion regions. The material terminates at an edge that is located as far as practical from the N-channel diffusion, toward the P-channel diffusion. In another aspect, roughly described, a gate conductor crosses a P-channel diffusion region and terminates as far as practical beyond the edge without making undesirable electrical contact with any other features of the integrated circuit design, and without overlying any other diffusion regions. A compressively strained cap layer overlies the P-channel diffusion. In yet another aspect, roughly described, a gate conductor crosses an N-channel diffusion and extends by as short a distance as practical before terminating or turning. A tensile strained cap material overlies the N-channel diffusion. | 02-04-2010 |
| 20100108262 | APPARATUS FOR IN-SITU SUBSTRATE PROCESSING - A plasma processing system (system) for processing a substrate is provided. The system includes a gas distribution system and a gas flow control assembly coupled to the gas distribution system. The gas flow control assembly is configured to control the input gases provided by the gas distribution system. The plasma processing system also includes a first set of nozzles coupled to the gas flow control assembly and configured to supply a first set of gases for processing a first portion of the substrate. The plasma processing system further includes a second set of nozzles coupled to the gas flow control assembly and configured to supply a second set of gases for processing a second portion of the substrate. The flow rate of the first set of gases is different from a flow rate of the second set of gases. | 05-06-2010 |
| 20100163180 | Sub-10 NM Line Features Via Rapid Graphoepitaxial Self-Assembly of Amphiphilic Monolayers - Methods for fabricating sublithographic, nanoscale microchannels utilizing an aqueous emulsion of an amphiphilic agent and a water-soluble, hydrogel-forming polymer, and films and devices formed from these methods are provided. | 07-01-2010 |
| 20100230048 | METHOD AND SYSTEM FOR TONE INVERTING OF RESIDUAL LAYER TOLERANT IMPRINT LITHOGRAPHY - A system for imprint lithography, which includes a substrate, a patterned mask, an imprint applying unit that imprints, via the patterned mask, a pattern into a resist layer on the substrate, and an overlay device that overlays a cladding layer over the substrate. | 09-16-2010 |
| 20100243161 | PITCH MULTIPLIED MASK PATTERNS FOR ISOLATED FEATURES - Crisscrossing spacers formed by pitch multiplication are used as a mask to form isolated features, such as contacts vias. A first plurality of mandrels are formed on a first level and a first plurality of spacers are formed around each of the mandrels. A second plurality of mandrels is formed on a second level above the first level. The second plurality of mandrels is formed so that they cross, e.g., are orthogonal to, the first plurality of mandrels, when viewed in a top down view. A second plurality of spacers is formed around each of the second plurality of mandrels. The first and the second mandrels are selectively removed to leave a pattern of voids defined by the crisscrossing first and second pluralities of spacers. These spacers can be used as a mask to transfer the pattern of voids to a substrate. The voids can be filled with material, e.g., conductive material, to form conductive contacts. | 09-30-2010 |
| 20110024041 | Method of manufacturing semiconductor device, and etching apparatus - An etching apparatus includes a process chamber into which an etching gas is introduced, an electrode for generating plasma disposed in the process chamber, a stage disposed in the process chamber, on which a substrate is placed, and a shadow ring disposed in the process chamber and placed above the stage, so as to cover the circumferential portion and an inner region adjacent thereto of the substrate in a non-contact manner. The shadow ring has an irregular pattern on the inner circumferential edge thereof. | 02-03-2011 |
| 20110030895 | MASK TRIMMING - A method for etching a dielectric layer is provided. A patterned mask with mask features is formed over a dielectric layer. The mask has isolated areas and dense areas of the mask features. The mask is trimmed by a plurality of cycles, where each cycle includes depositing a deposition layer, and selectively etching the deposition layer and the patterned mask. The selective etching selectively trims the isolated areas of the mask with respect to the dense areas of the mask. The dielectric layer is etched using the thus trimmed mask. The mask is removed. | 02-10-2011 |
| 20110132540 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus is disclosed in which a wafer mounted on a sample stage arranged in a processing chamber in a vacuum vessel is processed using a plasma formed in the processing chamber. A dielectric bell jar makes up the upper part of the vacuum vessel and surrounds processing chamber. A coil-shaped antenna wound on the outer periphery of the bell jar is supplied with the high-frequency power to form the plasma. A Faraday shield of a conductive material is formed of double layers including inner and outer layers arranged in spaced relation to each other between the antenna and the bell jar, each layer having a plurality of slits and set at a predetermined potential. The slits of the inner and outer layers of the Faraday shield are arranged in staggered fashion. | 06-09-2011 |
| 20110180212 | Plasma Processing Chamber for Bevel Edge Processing - Chambers for processing a bevel edge of a substrate are provided. One such chamber includes a bottom electrode defined to support a substrate in the chamber. The bottom electrode has a bottom first level for supporting the substrate and a bottom second level near an outer edge of bottom electrode. The bottom second level is defined at a step below the bottom first level. Further included is a top electrode oriented above the bottom electrode. The top electrode having a top first level and a top second level, where the top first level is opposite the bottom first level and the top second level is opposite the bottom second level. The top second level is defined at a step above the top first level. A bottom ring mount oriented at the bottom second level is included. The bottom ring mount includes a first adjuster for moving a bottom permanent magnet toward and away from the top electrode. Further included is a top ring mount oriented at the top second level. The top ring mount includes a second adjuster for moving a top permanent magnet toward and away from the bottom electrode. | 07-28-2011 |
| 20110198033 | SHUTTER DEVICE AND VACUUM PROCESSING APPARATUS - A shutter device having two shutter plates, which shield between an IBS and a substrate, is configured such that the two shutter plates are disposed at symmetrical positions across the IBS and can perform an opening/closing operation in synchronization with a rotation of a rotation-link-member which is rotatably disposed surrounding the IBS. With the configuration, the shutter device can reduce an offset of a shield range in the opening/closing operation. | 08-18-2011 |
| 20110265950 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND TARGET SUBSTRATE PROCESSING SYSTEM - A semiconductor device manufacturing method includes removing copper deposits, by use of an organic acid gas and an oxidizing gas, from a surface of a second interlayer insulation film having a groove formed therein and reaching a copper-containing electric connector member. The second interlayer insulation film is disposed on a first interlayer insulation film provided with the electric connector member. The method then includes reducing a surface of the electric connector member exposed at a bottom of the groove of the second interlayer insulation film; forming a barrier layer on the second interlayer insulation film; and forming a copper-containing conductive film to fill the groove of the second interlayer insulation film. | 11-03-2011 |
| 20120080148 | Compact RF Antenna for an Inductively Coupled Plasma Ion Source - An inductively coupled plasma ion source for a focused ion beam (FIB) system is disclosed, comprising an insulating plasma chamber with a feed gas delivery system, a compact radio frequency (RF) antenna coil positioned concentric to the plasma chamber and in proximity to, or in contact with, the outer diameter of the plasma chamber. In some embodiments, the plasma chamber is surrounded by a Faraday shield to prevent capacitive coupling between the RF voltage on the antenna and the plasma within the plasma chamber. High dielectric strength insulating tubing is heat shrunk onto the outer diameter of the conductive tubing or wire used to form the antenna to allow close packing of turns within the antenna coil. The insulating tubing is capable of standing off the RF voltage differences between different portions of the antenna, and between the antenna and the Faraday shield. | 04-05-2012 |
| 20120097329 | Stencils for High-Throughput Micron-Scale Etching of Substrates and Processes of Making and Using the Same - The present invention is directed to stencils for high-throughput, high-resolution etching of substrates and processes of making and using the same. | 04-26-2012 |
| 20120103519 | Plasma Etch Resistant, Highly Oriented Yttria Films, Coated Substrates and Related Methods - Included within the scope of the invention are plasma etch-resistant films for substrates. The films include a yttria material and a at least a portion of the yttria material is in a crystal phase having an orientation defined by a Miller Index notation {111}. Also included are methods of manufacturing plasma etch-resistant films on a substrate. Such methods include applying a yttria material-containing composition onto at least a portion of a surface of a substrate to form a film. The film includes a yttria material and at least a portion of the yttria material is in a crystal phase having an orientation defined by a Miller Index notation {111}. | 05-03-2012 |
| 20120138227 | SPACER FORMATION FOR ARRAY DOUBLE PATTERNING - A method for forming an array area with a surrounding periphery area, wherein a substrate is disposed under an etch layer, which is disposed under a patterned organic mask defining the array area and covers the entire periphery area is provided. The patterned organic mask is trimmed. An inorganic layer is deposited over the patterned organic mask where a thickness of the inorganic layer over the covered periphery area of the organic mask is greater than a thickness of the inorganic layer over the array area of the organic mask. The inorganic layer is etched back to expose the organic mask and form inorganic spacers in the array area, while leaving the organic mask in the periphery area unexposed. The organic mask exposed in the array area is stripped, while leaving the inorganic spacers in place and protecting the organic mask in the periphery area. | 06-07-2012 |
| 20120211162 | TRANSMISSION ELECTRON MICROSCOPY SAMPLE ETCHING FIXTURE - A mask fixture for etching an item includes: a top fixture disposed over the item, including a reservoir centered within the top fixture for containing an etchant; a bottom fixture underneath the item to be etched including a recessed surface area centered within the bottom fixture; and an etch-resistant window for holding the item to be etched, the etch-resistant window disposed entirely within the recessed surface area. In addition, a small via centered within and intersecting both the top and bottom fixtures acts as a path for a high intensity light beam. | 08-23-2012 |
| 20120247667 | PLASMA TREATMENT APPARATUS - According to an embodiment, a plasma treatment apparatus includes a processing target holding unit and a plasma generation unit in a chamber. The processing target holding unit includes a supporting table on which a wafer is mounted, a ring-shaped insulator ring arranged at an outer periphery of the supporting table, and a protective film containing yttria for covering a side surface section and an upper surface section of the insulator ring. The protective film is formed thicker on the upper surface section than on the side surface section of the insulator ring. | 10-04-2012 |
| 20120273130 | Internal Faraday Shield Having Distributed Chevron Patterns and Correlated Positioning Relative to External Inner and Outer TCP Coil - Plasma processing chambers having internal Faraday shields with defined groove configurations, are defined. In one example, the chamber includes an electrostatic chuck for receiving a substrate and a dielectric window connected to a top portion of the chamber, where the dielectric window disposed over the electrostatic chuck. Also included is a Faraday shield disposed inside of the chamber and defined between the electrostatic chuck and the dielectric window. The Faraday shield includes an inner zone having an inner radius range, a middle zone having a middle radius range, an outer zone having an outer radius range, where the inner zone is adjacent to the middle zone, and the middle zone being adjacent to the outer zone. Further defining the Faraday shield is a first set of radial slots (A) extending through the inner zone, the middle zone, and the outer zone, a second set of radial slots (C) extending through only the outer zone; and a third set of radial slots (B) extending through the middle zone and outer zone. In this configuration, the first, second and third radial slots are arranged radially around the Faraday shield in a repeating pattern of slots A, C, B, and C. | 11-01-2012 |
| 20120273131 | METHODS FOR FORMING ARRAYS OF SMALL, CLOSELY SPACED FEATURES - Methods of forming arrays of small, densely spaced holes or pillars for use in integrated circuits are disclosed. Various pattern transfer and etching steps can be used, in combination with pitch-reduction techniques, to create densely-packed features. Conventional photolithography steps can be used in combination with pitch-reduction techniques to form superimposed patterns of crossing elongate features with pillars at the intersections. Spacers are simultaneously applied to sidewalls of both sets of crossing lines to produce a pitch-doubled grid pattern. The pillars facilitate rows of spacers bridging columns of spacers. | 11-01-2012 |
| 20120305184 | DYNAMIC ION RADICAL SIEVE AND ION RADICAL APERTURE FOR AN INDUCTIVELY COUPLED PLASMA (ICP) REACTOR - Embodiments described herein provide apparatus and methods of etching a substrate using an ion etch chamber having a movable aperture. The ion etch chamber has a chamber body enclosing a processing region, a substrate support disposed in the processing region and having a substrate receiving surface, a plasma source disposed at a wall of the chamber body facing the substrate receiving surface, an ion-radical shield disposed between the plasma source and the substrate receiving surface, and a movable aperture member between the ion-radical shield and the substrate receiving surface. The movable aperture member is actuated by a lift assembly comprising a lift ring and lift supports from the lift ring to the aperture member. The ion-radical shield is supported by shield supports disposed through the aperture member. The aperture size, shape, and/or central axis location may be changed using inserts. | 12-06-2012 |
| 20120305185 | APPARATUS AND METHODS FOR DRY ETCH WITH EDGE, SIDE AND BACK PROTECTION - Embodiments of the present invention generally relate to a method and apparatus for plasma etching substrates and, more specifically, to a method and apparatus with protection for edges, sides and backs of the substrates being processed. Embodiments of the present invention provide an edge protection plate with an aperture smaller in size than a substrate being processed, wherein the edge protection plate may be positioned in close proximity to the substrate in a plasma chamber. The edge protection plate overlaps edges and/or sides on the substrate to provide protection to reflective coatings on the edge, sides, and back of the substrate. | 12-06-2012 |
| 20120325405 | METHODS OF FABRICATING LARGE-AREA, SEMICONDUCTING NANOPERFORATED GRAPHENE MATERIALS - Methods for forming a nanoperforated graphene material are provided. The methods comprise forming an etch mask defining a periodic array of holes over a graphene material and patterning the periodic array of holes into the graphene material. The etch mask comprises a pattern-defining block copolymer layer, and can optionally also comprise a wetting layer and a neutral layer. The nanoperforated graphene material can consist of a single sheet of graphene or a plurality of graphene sheets. | 12-27-2012 |
| 20130081761 | RADICAL PASSING DEVICE AND SUBSTRATE PROCESSING APPARATUS - A radical passing device can selectively pass only radicals from plasma securely. In a chamber | 04-04-2013 |
| 20130139966 | JIG FOR USE IN ETCHING AND CHEMICAL LIFT-OFF APPARATUS INCLUDING THE SAME - A jig for use in etching supports an etching target while an etching process is performed and surrounds a remaining region of the etching target except for a portion of the etching target, so as to expose the portion of the etching target. Accordingly, a stable support of the etching target during the etching process may be provided, and thus an etching of an undesired region may be prevented, and a stable production yield may be accomplished. | 06-06-2013 |
| 20130174982 | METAL HARD MASK FABRICATION - The present disclosure provides for methods of fabricating a metal hard mask and a metal hard mask fabricated by such methods. A method includes flowing at least one metal reactant gas into a reaction chamber configured to perform chemical vapor deposition (CVD), wherein the at least one metal reactant gas includes a metal-halogen gas or a metal-organic gas. The method further includes depositing a hard mask metal layer by CVD using the at least one metal reactant gas. | 07-11-2013 |
| 20130192758 | High Resolution Plasma Etch - An apparatus for fabrication of microscopic structures that uses a beam process, such as beam-induced decomposition of a precursor, to deposit a mask in a precise pattern and then a selective, plasma beam is applied, comprising the steps of first creating a protective mask upon surface portions of a substrate using a beam process such as an electron beam, focused ion beam (FIB), or laser process, and secondly etching unmasked substrate portions using a selective plasma beam etch process. Optionally, a third step comprising the removal of the protective mask may be performed with a second, materially oppositely selective plasma beam process. | 08-01-2013 |
| 20130276978 | DUAL-MASK ARRANGEMENT FOR SOLAR CELL FABRICATION - An arrangement for supporting substrates during processing, having a wafer carrier with a susceptor for supporting the substrate and confining the substrate to predetermined position. An inner mask is configured for placing on top of the substrate, the inner mask having an opening pattern to mask unprocessed parts of the substrate, but expose remaining parts of the substrate for processing. An outer mask is configured for placing on top of the inner mask, the outer mask having an opening that exposes the part of the inner mask having the opening pattern, but cover the periphery of the inner mask. | 10-24-2013 |
| 20130292056 | EDGE RING ASSEMBLY WITH DIELECTRIC SPACER RING - An edge ring assembly surrounds a substrate support surface in a plasma etching chamber. The edge ring assembly comprises an edge ring and a dielectric spacer ring. The dielectric spacer ring, which surrounds the substrate support surface and which is surrounded by the edge ring in the radial direction, is configured to insulate the edge ring from the baseplate. Incorporation of the edge ring assembly around the substrate support surface can decrease the buildup of polymer at the underside and along the edge of a substrate and increase plasma etching uniformity of the substrate. | 11-07-2013 |
| 20140053979 | REDUCED NUMBER OF MASKS FOR IC DEVICE WITH STACKED CONTACT LEVELS - A three-dimensional stacked IC device has a stack of contact levels at an interconnect region. According to some examples of the present invention, it only requires a set of N etch masks to create up to and including 2 | 02-27-2014 |
| 20140060736 | TEMPLATES INCLUDING SELF-ASSEMBLED BLOCK COPOLYMER FILMS - Methods for fabricating sublithographic, nanoscale microstructures arrays including openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. In some embodiments, the films can be used as a template or mask to etch openings in an underlying material layer. | 03-06-2014 |
| 20140110057 | SEGMENTED FOCUS RING ASSEMBLY - Embodiments of the present invention include a focus ring segment and a focus ring assembly. In one embodiment, the focus ring segment includes an arc-shaped body having a lower ring segment, a middle ring segment, a top ring segment and a lip. The lower ring segment has a bottom surface, and the middle ring segment has a bottom surface, wherein the middle ring segment is connected to the lower ring segment at the middle ring segment bottom surface. The top ring segment has a bottom surface, wherein the top ring segment is connected to the middle ring segment at the top ring segment bottom surface. The lip extends horizontally above the middle ring segment, wherein the lip is sloped radially inwards towards a centerline of the focus ring segment. In another embodiment, the focus ring assembly includes at least a first ring segment and a second ring segment. | 04-24-2014 |
| 20140158300 | PROTECTIVE SHEET FOR GLASS ETCHING - This invention provides a protective sheet for glass etching, having excellent etching solution penetration resistance, non-contaminating property and peeling efficiency. The protective sheet comprises a substrate and a PSA layer provided on one face of the substrate, such that, when the protective sheet is adhered to a non-etching area when etching glass, it protects the non-etching area from an etching solution. The PSA layer is constituted with a PSA having a gel fraction of 60% or higher. The PSA is an acrylic PSA comprising an acrylic polymer as a primary component. The acrylic polymer is synthesized by polymerizing starting monomers comprising, as a primary monomer, a monomer represented by a formula: CH | 06-12-2014 |
| 20140190632 | METHOD AND APPARATUS FOR PHOTOMASK PLASMA ETCHING - A method and apparatus for etching photomasks is provided herein. In one embodiment, a method of etching a photomask includes providing a process chamber having a substrate support pedestal adapted to receive a photomask substrate thereon. An ion-radical shield is disposed above the pedestal. A substrate is placed upon the pedestal beneath the ion-radical shield. A process gas is introduced into the process chamber and a plasma is formed from the process gas. The substrate is etched predominantly with radicals that pass through the shield. | 07-10-2014 |
| 20140196848 | FINNED SHUTTER DISK FOR A SUBSTRATE PROCESS CHAMBER - Shutter disks for use in process chambers are provided herein. In some embodiments, a shutter disk for use in a process chamber may include a body having an outer perimeter, a top surface of the body, wherein the top surface includes a central portion having a substantially horizontal planar surface, and at least one angled structure disposed radially outward of the central portion, each of the at least one angled structure having a top portion and an angled surface disposed at a downward angle in a radially outward direction from the top portion toward the outer perimeter, and a bottom surface of the body. | 07-17-2014 |
| 20140202632 | HARDMASK SURFACE TREATMENT - Methods of treating the surface of a metal-containing hardmask used in the manufacture of semiconductors by contacting the hardmask surface with a composition capable of adjusting the water contact angle so as to substantially match that of subsequently applied organic coatings are provided. | 07-24-2014 |
| 20140262026 | PROCESS KIT FOR DEPOSITION AND ETCHING - Variable geometry process kits for use in semiconductor process chambers have been provided herein. In some embodiments, a process kit for use in a semiconductor process chamber includes: an annular body configured to rest about a periphery of a substrate support; a first ring positioned coaxially with the annular body and supported by the annular body; a second ring positioned coaxially with the first ring and supported by the first ring; and an annular shield comprising a horizontal leg positioned coaxially with the second ring such that a portion of the horizontal leg is aligned with and below portions of the first ring and second ring. | 09-18-2014 |
| 20140283991 | Wafer Edge Protector - A wafer edge protector is used in an inductively coupled plasma reactive ion etching instrument for the manufacturing of GaN semiconductor devices and circuits. The wafer edge protector comprises a ring clamp, which has a first inner diameter and a second inner diameter, and the ring clamp covers the edges of a wafer and a wafer carrier to clamp the wafer and the wafer carrier and to prevent damage on the edges of the wafer and the wafer carrier during the etching process. | 09-25-2014 |
| 20140290858 | METHODS OF FORMING A POLYMERIC MATERIAL VIA SELF-ASSEMBLY OF AMPHIPHILIC MATERIAL AND RELATED TEMPLATE STRUCTURES - Methods for fabricating sub-lithographic, nanoscale microchannels utilizing an aqueous emulsion of an amphiphilic agent and a water-soluble, hydrogel-forming polymer, and films and devices formed from these methods are provided. | 10-02-2014 |
| 20140326408 | MASK PATTERN FOR HOLE PATTERNING AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SAME - A method for fabricating a semiconductor device includes forming an etching target layer over a substrate including a first region and a second region; forming a hard mask layer over the etching target layer; forming a first etch mask over the hard mask layer, wherein the first etch mask includes a plurality of line patterns and a sacrificial spacer layer formed over the line patterns; forming a second etch mask over the first etch mask, wherein the second etch mask includes a mesh type pattern and a blocking pattern covering the second region; removing the sacrificial spacer layer; forming hard mask layer patterns having a plurality of holes by etching the hard mask layer using the second etch mask and the first etch mask; and forming a plurality of hole patterns in the first region by etching the etching target layer using the hard mask layer patterns. | 11-06-2014 |
| 20150020966 | APPARATUS AND METHOD FOR FORMING LUBRICANT RECESS HAVING MINUTE CONFIGURATION IN CURVED INNER SURFACE - Disclosed is an apparatus and method for forming lubricant recesses having minute configurations by applying a photolithograph method in a curved inner surface, such as a cylinder bore surface of a cylinder block, the inside of a cylinder liner, the inside of a compressor cylinder, a big end of a connecting rod, a big end bearing, a shaft insertion hole of a rocker arm, or the like in an internal combustion engine. | 01-22-2015 |
| 20150027635 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus of exciting a processing gas into plasma by applying a high frequency power between an upper electrode and a lower electrode provided within a processing chamber and performing a plasma process on a target object to be processed with the plasma includes a DC power supply configured to apply a DC voltage to the upper electrode; a ground electrode connected to the DC power supply; and an annular shield member provided outside the ground electrode. A groove is formed into a downward recess at an outer peripheral portion of the ground electrode, and an upper end of the shield member is positioned above an upper end of the peripheral portion of the ground electrode. A protruding portion, which is protruded toward a center of the ground electrode, is formed at a portion of the shield member positioned above the ground electrode. | 01-29-2015 |
| 20150107769 | HARD MASK AND METHOD OF MANUFACTURING THE SAME - A hard mask is provided which, while having a film density to demonstrate etching resistance, is low in film stress. The hard mask HD of this invention, which is provided to restrict the range of processing to the surface of a to-be-processed object W at the time of performing a predetermined processing to the to-be-processed object, is constituted by a titanium nitride film. This titanium nitride film is made into a two-layer structure. A lower-side layer L | 04-23-2015 |
| 20150114559 | PLASMA SHIELDING MEMBERS, PLASMA DETECTING STRUCTURES, AND PLASMA REACTION APPARATUSES - A plasma shielding member may include a body having a first surface and a second surface that are opposite to each other, and a plurality of through holes each extending from the first surface to the second surface; a narrower portion of a respective through hole formed at one end of each of the through holes; and/or a wider portion of the respective through hole formed at another end of each of the through holes. A plasma shielding member may include a body including a plurality of through holes that extends from a first surface of the body toward a second surface of the body. Each of the through holes may be defined by a narrower portion of the body at a first end of the respective through hole, and by a wider portion of the body at a second end of the respective through hole. | 04-30-2015 |
| 20150122419 | LASER AND PLASMA ETCH WAFER DICING WITH A DOUBLE SIDED UV-CURABLE ADHESIVE FILM - Laser and plasma etch wafer dicing using UV-curable adhesive films. A mask is formed covering ICs formed on the wafer, as well as any bumps providing an interface to the ICs. The semiconductor wafer is coupled to a carrier substrate by a double-sided UV-curable adhesive film. The mask is patterned by laser scribing to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer, below thin film layers from which the ICs are formed. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the ICs. The UV-curable adhesive film is partially cured by UV irradiation through the carrier. The singulated ICs are then detached from the partially cured adhesive film still attached to the carrier substrate, for example individually by a pick and place machine. The UV-curable adhesive film may then be further cured for the film's complete removal from the carrier substrate. | 05-07-2015 |
| 20150129129 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a process chamber including a sidewall, a mounting table disposed in the process chamber, a shield member which is disposed along the inner surface of the sidewall to surround the mounting table and has an opening facing the transfer port, and a shutter configured to open/close the opening, the shutter being movable up and down. The shutter has a first portion adapted to face the opening, and a second portion adapted to face the shield member at a lower side of the shield member. The shield member has a lower portion including a contact surface facing the second portion. A contactor adapted to contact the contact surface is disposed at the second portion. The first portion of the shutter closes the opening through a gap between the first portion and the shield member. The contact surface and the contactor are formed of HASTELLOY®. | 05-14-2015 |
| 20150325459 | PITCH MULTIPLICATION SPACERS AND METHODS OF FORMING THE SAME - Spacers in a pitch multiplication process are formed without performing a spacer etch. Rather, the mandrels are formed over a substrate and then the sides of the mandrels are reacted, e.g., in an oxidization, nitridation, or silicidation step, to form a material that can be selectively removed relative to the unreacted portions of the mandrel. The unreacted portions are selectively removed to leave a pattern of free-standing spacers. The free-standing spacers can serve as a mask for subsequent processing steps, such as etching the substrate. | 11-12-2015 |
| 20150371860 | METHOD AND SYSTEM FOR THINNING WAFER THEREOF - A method for thinning a wafer is provided. The method includes placing a wafer on a support assembly and securing an etching mask to a backside of the wafer. The etching mask covers a peripheral portion of the wafer. The method further includes performing a wet etching process on the backside of the wafer to form a thinned wafer, and the thinned wafer includes peripheral portions having a first thickness and a central portion having a second thickness smaller than the first thickness. A system for forming the thinned wafer is also provided. | 12-24-2015 |
| 20160049279 | PLASMA DEVICE - A plasma device is proposed, the plasma device including a first member including a chuck unit accommodated with an antenna coil or a processed article so rotating as to generate a plasma inside a chamber, and a second member connected with a first harmonics power source, whereby a second harmonics power source that has pulsed a first harmonics power source is applied to the first member in response to the relative rotation of a first terminal of first member and a second terminal of second member. | 02-18-2016 |
| 20160181067 | DYNAMIC ION RADICAL SIEVE AND ION RADICAL APERTURE FOR AN INDUCTIVELY COUPLED PLASMA (ICP) REACTOR | 06-23-2016 |
| 20160181142 | EDGE RING FOR A SUBSTRATE PROCESSING CHAMBER | 06-23-2016 |
| 20160380189 | MANUFACTURING METHOD OF MAGNETORESISTIVE EFFECT ELEMENT AND MANUFACTURING APPARATUS OF MAGNETORESISTIVE EFFECT ELEMENT - According to one embodiment, a manufacturing method of a magnetoresistive effect element includes forming a laminated structure on a substrate, the laminated structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having an invariable magnetization direction, and a non-magnetic layer between the first and second magnetic layers, forming a first mask layer having a predetermined plane shape on the laminated structure, and processing the laminated structure based on the first mask layer by using an ion beam whose solid angle in a center of the substrate is 10° or more. | 12-29-2016 |
| 20220139673 | APPARATUS FOR TREATING SUBSTRATE AND METHOD FOR TREATING SUBSTRATE - A substrate treating apparatus includes a processing chamber having an inner processing space, a support unit supporting a substrate in the processing space, a gas supply unit supplying processing gas into the treatment space, and a RF power for supplying an RF signal to excite the processing gas into a plasma state. The support unit includes an edge ring surrounding the substrate, a coupling ring disposed under the edge ring and including an electrode therein, and a cable connected to the electrode. The end of the cable is grounded. | 05-05-2022 |
