| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 136264000 | Selenium or tellurium containing | 42 |
| 20090032108 | FORMATION OF PHOTOVOLTAIC ABSORBER LAYERS ON FOIL SUBSTRATES - An absorber layer of a photovoltaic device may be formed on an aluminum or metallized polymer foil substrate. A nascent absorber layer containing one or more elements of group IB and one or more elements of group IIIA is formed on the substrate. The nascent absorber layer and/or substrate is then rapidly heated from an ambient temperature to an average plateau temperature range of between about 200° C. and about 600° C. and maintained in the average plateau temperature range 1 to 30 minutes after which the temperature is reduced. | 02-05-2009 |
| 20090032109 | CIS BASED THIN-FILM PHOTOVOLTAIC MODULE AND PROCESS FOR PRODUCING THE SAME - The tin-free air side of each of float-processed soda-lime float glass substrates is quickly and accurately distinguished, and the substrates are arranged, with the air sides facing upward. CIS based thin-film photo voltaic devices are formed on the air sides to improve conversion efficiency and yield and reduce production cost. | 02-05-2009 |
| 20090050208 | METHOD AND STRUCTURES FOR CONTROLLING THE GROUP IIIA MATERIAL PROFILE THROUGH A GROUP IBIIIAVIA COMPOUND LAYER - A method is provided for forming a Group IBIIIAVIA solar cell absorber layer including indium (In) and gallium (Ga) that are distributed substantially uniformly between the top surface and the bottom surface of the absorber layer. In one embodiment method includes forming a precursor by depositing a metallic layer including copper (Cu), indium (In) and gallium (Ga) on the base, and depositing a film comprising selenium (Se) and tellurium (Te) on the metallic layer. In the precursor, the molar ratio of Te to Ga is equal to or less than 1. In the following step, the precursor is heated to a temperature range of 400-600° C. to form the Group IBIIIAVIA solar cell absorber layer. | 02-26-2009 |
| 20090120501 | FORMATION OF PHOTOCONDUCTIVE AND PHOTOVOLTAIC FILMS - The present application discloses a method and system of depositing a lead selenide film onto another material. The lead selenide film may used in a photoconductive application or a photovoltaic application. Furthermore, the applications may be responsive to infrared radiation at ambient temperature. In one embodiment, a method includes sputtering the lead selenide film, performing a sensitization process, and applying a passivation film. In one exemplary embodiment, a p-n junction is formed by directly adhering a lead selenide film to a silicon substrate. | 05-14-2009 |
| 20090205714 | Metal Plating Composition and Method for the Deposition of Copper-Zinc-Tin Suitable for Manufacturing Thin Film Solar Cell - To be able to form a copper-zinc-tin alloy which optionally comprises at least one chalcogenide and thus forms a semiconductor without the use of toxic substances a metal plating composition for the deposition of a copper-zinc-tin alloy is disclosed, wherein said metal plating composition comprises at least one copper plating species, at lease one zinc plating species, at least one tin plating species and at least one complexing agent and further, if the alloy contains at least one chalcogen, at least one chalcogen plating species. | 08-20-2009 |
| 20090242033 | Method For Preparing Cis Compounds and Thin Layer, and Solar Cell Having Cis Compound Thin Layer - A method for preparing a CIS (Cu—In—Se) compound includes (S1) producing a plurality of first composite particles having an indium selenide outer layer physically coupled to at least a part of a copper selenide seed particle surface or a plurality of second composite particles having a copper selenide outer layer physically coupled to at least a part of an indium selenide seed particle surface; and (S2) making a CIS compound by thermally treating composite particles selected from the group consisting of the first composite particles, the second composite particles and their mixtures. This method may prevent loss of selenium, which inevitably requires selenium environment, and also improves dispersion, coupling and reaction uniformity for the formation of a CIS compound. | 10-01-2009 |
| 20100089453 | High-Throughput Printing of Semiconductor Precursor Layer From Microflake Particles - Methods and devices are provided for high-throughput printing of semiconductor precursor layer from microflake particles. In one embodiment, the method comprises of transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be microflakes that have a high aspect ratio. The resulting dense film formed from microflakes are particularly useful in forming photovoltaic devices. | 04-15-2010 |
| 20100218827 | SUBSTRATE FOR SOLAR CELL AND SOLAR CELL - A substrate for a solar cell having a metal substrate, a first insulating oxide film formed on the metal substrate by anodic oxidation, and a second insulating film, wherein the first insulating oxide film has pores and the pores are sealed with the second insulating film at a sealing ratio of 5 to 80%. | 09-02-2010 |
| 20100258191 | Method and apparatus for controllable sodium delivery for thin film photovoltaic materials - A solar cell includes a substrate, a first electrode located over the substrate, where the first electrode comprises a first transition metal layer, at least one p-type semiconductor absorber layer located over the first electrode, an n-type semiconductor layer located over the p-type semiconductor absorber layer, and a second electrode located over the n-type semiconductor layer. The first transition metal layer contains (i) an alkali element or an alkali compound and (ii) a lattice distortion element or a lattice distortion compound. The p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material. | 10-14-2010 |
| 20100269906 | CIS SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME - An alloy substrate formed on an alloy of Ni and Mo is formed by electroforming. The alloy substrate has graded composition in which alloy composition varies in a thickness direction thereof. A lower surface side is mainly composed of Ni, and a upper surface side is mainly composed of Mo. An upper surface of the alloy substrate is formed with a large number of minute and pyramidal unevenness having high light scattering property. A CIS light absorbing layer is formed on the upper surface of the alloy substrate, and an upper electrode is provided thereabove. | 10-28-2010 |
| 20100269907 | THIN-FILM SOLAR CELL HAVING A MOLYBDENUM-CONTAINING BACK ELECTRODE LAYER - A thin-film solar cell has a rear electrode layer formed of at least 50 atom % of Mo, which in addition to the common contaminants includes 0.1 to 45 atom % of at least one element from the group of Ti, Zr, Hf, V, Nb, Ta, and W, 0 to 7.5 atom % of Na, and 0 to 7.5 atom % of at least one element forming a compound with Na that has a melting point >500 C. The rear electrode layer has good long-term resistance and bonding with the CIGS absorber layer. In addition, the constancy of the alkali metal integration in the absorber layer is improved. | 10-28-2010 |
| 20100300539 | Solar cell structure and manufacturing method thereof - The present invention provides a solar cell structure and the manufacturing method thereof. The solar cell structure includes an active layer having a plurality of first recesses near the edges thereof; and a transparent conductive layer forming on the active layer and having a plurality of second recesses near the edges thereof connecting to the plurality of first recesses. | 12-02-2010 |
| 20100313957 | QUANTUM DOT SOLAR CELLS - Solar cells and methods for manufacturing solar cells and/or components or layers thereof are disclosed. An example method for manufacturing a multi-bandgap quantum dot layer for use in a solar cell may include providing a first precursor compound, providing a second precursor compound, and combining a portion of the first precursor compound with a portion of the second precursor compound to form a multi-bandgap quantum dot layer that includes a plurality of quantum dots that differ in bandgap. | 12-16-2010 |
| 20110011460 | Chalcogenide-Based Photovoltaic Devices and Methods of Manufacturing the Same - In one example embodiment, a method includes sputtering one or more absorber layers over a substrate. In a particular embodiment, the substrate is pre-heated to a substrate temperature of at least approximately 300 degrees Celsius prior to the sputtering and during the sputtering of each of one or more of the absorber layers, and the sputtering of at least one of the absorber layers is performed in a sputtering atmosphere having a pressure of at least 0.5 Pascals. Additionally, in a particular embodiment, the sputtering of at least one of the absorber layers comprises sputtering from a sputter target that comprises a chalcogenide alloy that comprises copper (Cu) and one or more of sulfur (S), selenium (Se), or tellurium (Te). | 01-20-2011 |
| 20110186131 | SUBSTRATE FOR SELENIUM COMPOUND SEMICONDUCTORS, PRODUCTION METHOD OF SUBSTRATE FOR SELENIUM COMPOUND SEMICONDUCTORS, AND THIN-FILM SOLAR CELL - A substrate for selenium compound semiconductor has at least a steel base and an aluminum base. The aluminum base is arranged on one end in a direction of lamination of the steel base and the aluminum base, the steel base is arranged on the other end in the direction. An alloy layer having a thickness of from 0.01 μm to 10 μm is formed between the steel base and the aluminum base. A thermal oxide film having a thickness of 6 nm or more is formed on a surface of the steel base opposite to the aluminum base. | 08-04-2011 |
| 20110209763 | METHOD OF MANUFACTURING THIN-FILM LIGHT-ABSORBING LAYER, AND METHOD OF MANUFACTURING THIN-FILM SOLAR CELL USING THE SAME - Disclosed is a method of manufacturing a thin-film light-absorbing layer using spraying, including mixing precursor solutions comprising CuCl | 09-01-2011 |
| 20110253219 | PHOTOELECTRONICALLY ACTIVE, CHALCOGEN-BASED THIN FILM STRUCTURES INCORPORATING TIE LAYERS - The present invention provides improved chalcogen-containing, photovoltaic structures as well as related compositions, photovoltaic devices incorporating these structures, methods of making these structures and devices, and methods of using these structures and devices. According to principles of the present invention, the adhesion of PACB compositions is improved through the use of chalcogen-containing tie layers. | 10-20-2011 |
| 20120055554 | COPPER ZINC TIN CHALCOGENIDE NANOPARTICLES - This invention relates to nanoparticles of kesterite (copper zinc tin sulfide) and copper zinc tin selenide nanoparticles, inks and devices thereof, and processes to prepare same. The nano-particles are useful to for the absorber layer as a p-type semiconductor in a thin film solar cell application. | 03-08-2012 |
| 20120060928 | PROCESSES FOR PREPARING COPPER TIN SULFIDE AND COPPER ZINC TIN SULFIDE FILMS - This invention relates to processes for preparing films of CTS and CZTS and their selenium analogues on a substrate. Such films are useful in the preparation of photovoltaic devices. This invention also relates to processes for preparing coated substrates and for making photovoltaic devices. | 03-15-2012 |
| 20120103420 | CU-IN-ZN-SN-(SE,S)-Based Thin Film for Solar Cell and Preparation Method Thereof - A Cu-In-Zn-Sn-(Se,S)-based thin film for a solar cell and a preparation method thereof, and more particularly, to a Cu-In-Zn-Sn-(Se,S)-based thin film for a solar cell which can reduce an amount of In to be used and exhibit an excellent conversion efficiency and a preparation method thereof. | 05-03-2012 |
| 20120241005 | AROMATIC POLYIMIDE FILM, LAMINATE, AND SOLAR CELL - A CIS solar cell having flexibility and high conversion efficiency may be produced, using, as a substrate, a polyimide film which is prepared from an aromatic tetracarboxylic acid component comprising 3,3′,4,4′-biphenyltetracarboxylic dianhydride as the main component and an aromatic diamine component comprising p-phenylenediamine as the main component, and has a maximum dimensional change in the temperature-increasing step of from 25° C. to 500° C. within a range of from +0.6% to +0.9%, excluding +0.6%, based on the dimension at 25° C. before heat treatment. | 09-27-2012 |
| 20120318361 | MANUFACTURING THIN FILMS WITH CHALCOGEN SPECIES WITH INDEPENDENT CONTROL OVER DOPING AND BANDGAPS - A method for synthesizing a thin film of CZTS such as for use as an absorber in a photovoltaic device. The method includes providing a substrate in a chamber, and, then, depositing a film of CZTS material on the substrate, the CZTS material comprising copper, zinc, tin, and at least on chalcogen species. The depositing includes tuning an optical bandgap of the film with heterovalent alloying. The depositing is performed at low temperatures with the substrate provided in the chamber free of direct/active heating. For example, the substrate may be maintained at a temperature below about 150° C. during the depositing of the film. The heterovalent alloying involves controlling deposition rates for the copper and the zinc to define a copper to zinc ratio set the optical bandgap such as a value between about 1.0 eV and about 2.75 eV. | 12-20-2012 |
| 20130037110 | Particle-Based Precursor Formation Method and Photovoltaic Device Thereof - Techniques for fabrication of kesterite Cu—Zn—Sn—(Se,S) films and improved photovoltaic devices based on these films are provided. In one aspect, a method of forming metal chalcogenide nanoparticles is provided. The method includes the following steps. Water, a source of Zn, a source of Cu, optionally a source of Sn and at least one of a source of S and a source of Se are contacted under conditions sufficient to produce a dispersion of the metal chalcogenide nanoparticles having a Zn chalcogenide distributed within a surface layer thereof. The metal chalcogenide nanoparticles are separated from the dispersion and can subsequently be used to form an ink for deposition of kesterite films. | 02-14-2013 |
| 20130037111 | Process for Preparation of Elemental Chalcogen Solutions and Method of Employing Said Solutions in Preparation of Kesterite Films - Techniques for preparing chalcogen-containing solutions using an environmentally benign borane-based reducing agent and solvents under ambient conditions, as well as application of these solutions in a liquid-based method for deposition of inorganic films having copper (Cu), zinc (Zn), tin (Sn), and at least one of sulfur (S) and selenium (Se) are provided. In one aspect, a method for preparing a chalcogen-containing solution is provided. The method includes the following steps. At least one chalcogen element, a reducing agent and a liquid medium are contacted under conditions sufficient to produce a homogenous solution. The reducing agent (i) contains both boron and hydrogen, (ii) is substantially carbon free and (iii) is substantially metal free. | 02-14-2013 |
| 20130118585 | NANOCRYSTALLINE COPPER INDIUM DISELENIDE (CIS) AND INK-BASED ALLOYS ABSORBER LAYERS FOR SOLAR CELLS - Embodiments of the invention are to a copper indium diselenide (CIS) comprising nanoparticle where the nanoparticle includes a CIS phase and a second phase comprising a copper selenide. The CIS comprising nanoparticles are free of surfactants or binding agents, display a narrow size distribution and are 30 to 500 nm in cross section. In an embodiment of the invention, the CIS comprising nanoparticles are combined with a solvent to form an ink. In another embodiment of the invention, the ink can be used for screen or ink-jet printing a precursor layer that can be annealed to a CIS comprising absorber layer for a photovoltaic device. | 05-16-2013 |
| 20130125988 | CZTS/Se PRECURSOR INKS AND METHODS FOR PREPARING CZTS/Se THIN FILMS AND CZTS/Se-BASED PHOTOVOLTAIC CELLS - The present invention relates to coated binary and ternary chalcogenide nanoparticle compositions that can be used as copper zinc tin chalcogenide precursor inks. In addition, this invention relates to coated substrates comprising binary and ternary chalcogenide nanoparticle compositions and provides processes for manufacturing these coated substrates. This invention also relates to compositions of copper zinc tin chalcogenide thin films and photovoltaic cells comprising such films. In addition, this invention provides processes for manufacturing copper zinc tin chalcogenide thin films, as well as processes for manufacturing photovoltaic cells incorporating such films. | 05-23-2013 |
| 20130153033 | INK FOR PRODUCING COMPOUND SEMICONDUCTOR THIN FILM, COMPOUND SEMICONDUCTOR THIN FILM PRODUCED USING THE INK, SOLAR CELL HAVING COMPOUND SEMICONDUCTOR THE THIN FILM, AND PROCESS FOR PRODUCING SOLAR CELL - An ink for forming a compound semiconductor thin film is provided, which contains a binder includes a compound includes an S atom or an Se atom and metallic compound particles which are both dispersed in an organic solvent. A compound semiconductor thin film is formed by applying or printing the ink for forming a compound semiconductor thin film and heat-treating it. A solar cell is constituted, which has a light-absorbing layer formed of the compound semiconductor thin film. | 06-20-2013 |
| 20130213478 | Enhancing the Photovoltaic Response of CZTS Thin-Films - In one embodiment, a method includes depositing a precursor material outwardly from a substrate, introducing a source-material into proximity with the precursor material, depositing a dopant, and annealing the precursor layer in proximity with of the source-material layer. The precursor material may include Cu, Zn, and Sn, and one or more of S or Se. The source material may include Sn and one or more of S or Se. The dopant may be deposited in sufficient proximity to the precursor material such that the average grain size of the precursor material is increased by the presence of the dopant and is greater than 200 nm. The annealing of the precursor material may be performed in a constrained volume. | 08-22-2013 |
| 20130269783 | Semiconductor Material and Method of Production - A method of manufacturing (Ag | 10-17-2013 |
| 20130276888 | Reverse Stack Structures for Thin-Film Photovoltaic Cells - In one embodiment, a method includes depositing a photoactive layer onto a first substrate, depositing a contact layer onto the photoactive layer, attaching a second substrate onto the contact layer, and removing the first substrate from the photoactive layer, contact layer, and second substrate. | 10-24-2013 |
| 20130312831 | Techniques for Forming a Chalcogenide Thin Film Using Additive to a Liquid-Based Chalcogenide Precursor - Techniques for enhancing energy conversion efficiency in chalcogenide-based photovoltaic devices by improved grain structure and film morphology through addition of urea into a liquid-based precursor are provided. In one aspect, a method of forming a chalcogenide film includes the following steps. Metal chalcogenides are contacted in a liquid medium to form a solution or a dispersion, wherein the metal chalcogenides include a Cu chalcogenide, an M1 and an M2 chalcogenide, and wherein M1 and M2 each include an element selected from the group consisting of: Ag, Mn, Mg, Fe, Co, Cd, Ni, Cr, Zn, Sn, In, Ga, Al, and Ge. At least one organic additive is contacted with the metal chalcogenides in the liquid medium. The solution or the dispersion is deposited onto a substrate to form a layer. The layer is annealed at a temperature, pressure and for a duration sufficient to form the chalcogenide film. | 11-28-2013 |
| 20140048137 | Process for preparing coated substrates and photovoltaic devices - This invention provides compositions and the processes for preparing the compositions that are useful for preparing films of CZTS and its selenium analogues on a substrate. Such films are useful in preparing photovoltaic devices. This invention also provides processes for preparing a semiconductor layer comprising CZTS/Se microparticles embedded in an inorganic matrix. This invention also provides processes for making a photovoltaic devices and the photovoltaic devices so produced. | 02-20-2014 |
| 20140096826 | SOLUTION PROCESSING OF KESTERITE SEMICONDUCTORS - Methods for depositing a kesterite film comprising a compound of the formula: | 04-10-2014 |
| 20140116512 | INORGANIC SOLUTION AND SOLUTION PROCESS FOR ELECTRONIC AND ELECTRO-OPTIC DEVICES - A solution for forming at least a portion of an active layer of an electronic or electro-optic device includes a solvent, an additive mixed with the solvent to provide a solvent-additive blend, and a solute that includes at least one of a transition metal, an alkali metal, an alkaline earth metal, Al, Ga, In, Ge, Sn, or Sb dissolved in elemental form in the solvent-additive blend. The additive is selected from the group of additives consisting of NR1R2NHCOOH, NH2N—HCONHNH2, NH2COOH.NH3, NH2NHC(═NH)NH2.H2CO3, NH2NHCSNHNH2, NH2NHCSSH and all combinations thereof. R1 and R2 are each independently selected from hydrogen, aryl, methyl, ethyl and a linear, branched or cyclic alkyl of 3-6 carbon atoms. Methods of producing the solution, a method of producing a Kesterite film on a substructure and devices made with the solutions and methods are also provided. | 05-01-2014 |
| 20140144510 | PHOTOELECTRIC CONVERSION ELEMENT AND SOLAR CELL - A photoelectric conversion element of an embodiment includes: a p-type light absorbing layer having a chalcopyrite structure; an n-type semiconductor layer on the p-type light absorbing layer; an oxide layer on the n-type semiconductor layer; and a transparent electrode on the oxide layer. | 05-29-2014 |
| 20140209174 | INK FOR FORMING COMPOUND SEMICONDUCTOR THIN FILM AND PRODUCTION METHOD THEREOF - A method for producing a nanoparticle for forming a CZTS compound semiconductor thin film is provided which includes the step of reacting a solution including a metal salt or a metal complex with a solution including a chalcogenide salt to produce a CZTS compound nanoparticle. A CZTS compound semiconductor thin film is formed by coating or printing the nanoparticle for forming the CZTS compound semiconductor thin film, and subjecting it to a heat treatment. A solar cell including the CZTS compound semiconductor thin film as the light-absorbing layer is provided. | 07-31-2014 |
| 20140216555 | METAL CHALCOGENIDES AND METHODS OF MAKING AND USING SAME - Metal chalcogenides, and methods of making and using metal chalcogenides, are disclosed herein. Metal chalcogenides can be prepared by heating suitable copper, zinc, and/or tin compounds selected from the group consisting of chalcogenocarbamates, dichalcogenocarbamates, mercaptides, thiiocarbonates, trithiocarbonates, and combinations thereof (e.g., copper, zinc, and/or tin dichalcogenocarbamates) under conditions effective to form metal can be used, for example, to prepare solar cells. | 08-07-2014 |
| 20140251435 | NON-VACUUM METHOD OF MANUFACTURING LIGHT-ABSORBING MATERIALS FOR SOLAR CELL APPLICATION - The present invention describes a method of producing a p-type light-absorbing semiconductor copper zinc tin selenide/sulfide (Cu | 09-11-2014 |
| 20140326319 | Se OR S BASED THIN FILM SOLAR CELL AND METHOD FOR FABRICATING THE SAME - The present disclosure relates to a Se or S based thin film solar cell and a method for fabricating the same, which may improve the structural and electrical characteristics of an upper transparent electrode layer by controlling a structure of a lower transparent electrode layer in a thin film solar cell having a Se or S based light absorption layer. In the Se or S based thin film solar cell having a light absorption layer and a front transparent electrode layer, the front transparent electrode layer comprises a lower transparent electrode layer and an upper transparent electrode layer, and the lower transparent electrode layer comprises an oxide-based thin film obtained by blending an impurity element into a mixed oxide in which Zn oxide and Mg oxide are mixed (also, referred to as an ‘impurity-doped Zn—Mg-based oxide thin film’). | 11-06-2014 |
| 20150122335 | INK COMPOSITION FOR MANUFACTURING LIGHT ABSORPTION LAYER INCLUDING METAL NANO PARTICLES AND METHOD OF MANUFACTURING THIN FILM USING THE SAME - Disclosed are an ink composition for manufacturing a light absorption layer including metal nano particles and a method of manufacturing a thin film using the same, more particularly, an ink composition for manufacturing a light absorption layer including copper (Cu)-enriched Cu—In bimetallic metal nano particles and Group IIIA metal particles including S or Se dispersed in a solvent and a method of manufacturing a thin film using the same. | 05-07-2015 |
| 20150340535 | COMPOUND THIN-FILM PHOTOVOLTAIC CELL AND METHOD OF MANUFACTURING THEREOF - The method of manufacturing a compound thin-film photovoltaic cell, includes preparing a metal substrate, whose main constituent is iron, containing aluminium (Al) and chromium (Cr), and forming an alumina layer at least on an element forming surface of the metal substrate by thermal oxidation; forming an insulating layer on the alumina layer; depositing a first electrode layer on the insulating layer; depositing a compound light absorption layer on the first electrode layer; and depositing a second electrode layer on the compound light absorption layer. | 11-26-2015 |
| 20160079454 | FORMATION OF A I-III-VI2 SEMICONDUCTOR LAYER BY HEAT TREATMENT AND CHALCOGENIZATION OF AN I-III METALLIC PRECURSOR - A process for forming a semiconductor layer, especially with a view to photovoltaic applications, and more particularly to a process for forming a semiconductor layer of I-III-VI | 03-17-2016 |
