| Entries |
| Document | Title | Date |
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| 20080210302 | Methods and apparatus for forming photovoltaic cells using electrospray - Methods of forming a photovoltaic structures including nanoparticles are disclosed. The method includes electrospray deposition of nanoparticles. The nanoparticles can include TiO | 09-04-2008 |
| 20080210303 | Front electrode for use in photovoltaic device and method of making same - This invention relates to a front electrode/contact for use in an electronic device such as a photovoltaic device. In certain example embodiments, the front electrode of a photovoltaic device or the like includes a multilayer coating including at least one transparent conductive oxide (TCO) layer (e.g., of or including a material such as tin oxide, ITO, zinc oxide, or the like) and/or at least one conductive substantially metallic IR reflecting layer (e.g., based on silver, gold, or the like). In certain example instances, the multilayer front electrode coating may include one or more conductive metal(s) oxide layer(s) and one or more conductive substantially metallic IR reflecting layer(s) in order to provide for reduced visible light reflection, increased conductivity, cheaper manufacturability, and/or increased infrared (IR) reflection capability. At least one of the surfaces of the front glass substrate may be textured in certain example embodiments of this invention. | 09-04-2008 |
| 20080216892 | SHAPED NANOCRYSTAL PARTICLES AND METHODS FOR MAKING THE SAME - Shaped nanocrystal particles and methods for making shaped nanocrystal particles are disclosed. One embodiment includes a method for forming a branched, nanocrystal particle. It includes (a) forming a core having a first crystal structure in a solution, (b) forming a first arm extending from the core having a second crystal structure in the solution, and (c) forming a second arm extending from the core having the second crystal structure in the solution. | 09-11-2008 |
| 20080230120 | Photovoltaic device with nanostructured layers - Photovoltaic devices or solar cells are provided. More particularly, the present invention provides photovoltaic devices having IR and/or UV absorbing nanostructured layers that increase efficiency of solar cells. In some embodiments the nanostructured materials are integrated with one or more of: crystalline silicon (single crystal or polycrystalline) solar cells and thin film (amorphous silicon, microcrystalline silicon, CdTe, CIGS and III-V materials) solar cells whose absorption is primarily in the visible region. In some embodiments the nanoparticle materials are comprised of quantum dots, rods or multipods of various sizes. | 09-25-2008 |
| 20080245413 | SELF ASSEMBLED PHOTOVOLTAIC DEVICES - An apparatus (and a method of making the apparatus) that includes a first electrode, self-assembled photovoltaic layer(s) formed over the first electrode, and a second electrode formed over the self-assembled photovoltaic layer(s). The self-assembled photovoltaic layer(s) may be flexible (e.g. include polymer material and quantum dots). The self-assembled photovoltaic layer(s) may be formed at approximately room temperature. | 10-09-2008 |
| 20090078318 | Photovoltaic Devices Including An Interfacial Layer - A photovoltaic cell can include an interfacial layer in contact with a semiconductor layer. | 03-26-2009 |
| 20090090413 | Cadmium Telluride-Based Photovoltaic Device And Method Of Preparing The Same - A cadmium telluride (CdTe)-based photovoltaic device includes a CdTe layer including cadmium and telluride. The CdTe-based photovoltaic device further includes a substrate including a silicone layer formed from a silicone composition. The substrate, because it includes the composition, is both flexible and sufficiently able to withstand annealing temperatures in excess of 350° C., and frequently in excess of 500° C., to obtain maximum efficiency of the device. | 04-09-2009 |
| 20090114283 | DYE-SENSITIZED SOLAR CELL - A dye-sensitized solar cell includes a first substrate, a first electrode layer, a photosensitive dye layer, an electrolyte layer, a second electrode layer, and a second substrate. The first electrode layer is disposed on the first substrate. The photosensitive dye layer is disposed on the first electrode layer. The electrolyte layer is disposed on the photosensitive dye layer, and the electrolyte layer is composed of an organic electrolyte material. The second electrode layer is disposed on the electrolyte layer, and the second substrate is disposed on the second electrode layer. A stable and effective oxidation and reduction reaction is performed between the elements by the characteristics of the composition and the structure of the electrolyte material, thus improving the photoelectric conversion efficiency and the stability of the dye-sensitized solar cell. | 05-07-2009 |
| 20090145481 | NANO-OPTOELECTRONIC DEVICES - Optoelectronic devices with multiple nano-scale quantum dots detecting photons are presented. A nano-optoelectronic device includes a semiconductor substrate, an insulation layer on the semiconductor substrate, and a nano-optoelectronic structure on the insulation layer. The nano-optoelectronic structure includes a positive semiconductor, a negative semiconductor, and a plurality of quantum dots disposed therebetween. A first electrode connects the negative semiconductor, and a second electrode connects the positive semiconductor. | 06-11-2009 |
| 20090194165 | Ultra-high current density cadmium telluride photovoltaic modules - Solar photovoltaic (PV) modules have the highest possible conversion of photons to electrons in order to optimize their sunlight-to-electricity energy conversion efficiency. The electric current and sunlight-to-electricity conversion efficiency of CdTe modules is increased by about 20% with a new module design that (1) allows more light to pass through the glass and top layers to reach the PV junction area while (2) protecting the module against manufacturability pitfalls (shorts, shunts, and weak diodes) that have previously prevented the successful development of any equivalent module. | 08-06-2009 |
| 20090194166 | PHOTOVOLTAIC DEVICES INCLUDING DOPED SEMICONDUCTOR FILMS - A photovoltaic cell can include a dopant in contact with a semiconductor layer. | 08-06-2009 |
| 20090211637 | Photovoltaic devices including heterojunctions - A photovoltaic cell can include a heterojunction between semiconductor layers. | 08-27-2009 |
| 20090235986 | Back contact for thin film solar cells - The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device. | 09-24-2009 |
| 20090242029 | Junctions in substrate solar cells - The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration having an interface layer between the absorber layer and the window layer to create improved junctions. | 10-01-2009 |
| 20090242030 | HIGH PERFORMANCE ANTI-SPALL LAMINATE ARTICLE - Provided is a high performance anti-spall laminate article comprising a bi-layer polymeric composite. The bi-layer composite includes a polymeric sheet and a poly(ethylene terephthalate) (PET) film laminated to each other. The PET film has a tensile modulus of about 600,000 psi or higher in both the machine direction (MD) and the transverse direction (TD), a shock brittleness index of about 55 Joules or higher in the machine direction and about 25 joules or higher in the transverse direction, and a percent elongation at break (EOB) of about 110-160 in the machine direction and about 60-110 in the transverse direction. | 10-01-2009 |
| 20090266418 | PHOTOVOLTAIC DEVICES BASED ON NANOSTRUCTURED POLYMER FILMS MOLDED FROM POROUS TEMPLATE - The present invention includes a template, an optoelectronic device and methods for making the same. The optoelectronic device includes a first substrate; a first electrode disposed on the first substrate; a first interdigitating, nano-structured charge-transfer molded material (e.g., a polymer) with a first electron affinity disposed on the first electrode; a second interdigitating, nano-structured charge-transfer material (e.g., single molecules, quantum dots, or particles) with a second electron affinity disposed on the first interdigitating, nano-structured charge-transfer material; a second electrode disposed in the second interdigitating, nano-structured charge-transfer material; and a second substrate disposed on the second electrode. | 10-29-2009 |
| 20090272437 | Transparent Conductive Materials Including Cadmium Stannate - A photovoltaic cell can include a transparent conductive layer including cadmium stannate. | 11-05-2009 |
| 20090301564 | Semiconductor nanocrystals heterostructures - A semiconductor nanocrystal heterostructure has a core of a first semiconductor material surrounded by an overcoating of a second semiconductor material. Upon excitation, one carrier can be substantially confined to the core and the other carrier can be substantially confined to the overcoating. | 12-10-2009 |
| 20100012188 | High Power Efficiency, Large Substrate, Polycrystalline CdTe Thin Film Semiconductor Photovoltaic Cell Structures Grown by Molecular Beam Epitaxy at High Deposition Rate for Use in Solar Electricity Generation - Solar cell structures formed using molecular beam epitaxy (MBE) that can achieve improved power efficiencies in relation to prior art thin film solar cell structures are provided. A reverse p-n junction solar cell device and methods for forming the reverse p-n junction solar cell device using MBE are described. A variety of n-p junction and reverse p-n junction solar cell devices and related methods of manufacturing are provided. N-intrinsic-p junction and reverse p-intrinsic-n junction solar cell devices are also described. | 01-21-2010 |
| 20100116337 | Tandem Module Photovoltaic Devices Including An Organic Module - A tandem module photovoltaic cell can include an organic module in parallel with a semiconductor module. | 05-13-2010 |
| 20100243056 | LAYER FOR THIN FILM PHOTOVOLTAICS AND A SOLAR CELL MADE THEREFROM - A photovoltaic device is provided comprising an absorber layer, wherein the absorber layer comprises a plurality of grains separated by grain boundaries. At least one layer is disposed over the absorber layer. The absorber layer comprises grain boundaries that are substantially perpendicular to the at least one layer disposed over the absorber layer. The plurality of grains has a median grain diameter of less than 1 micrometer. Further, the grains are either p-type or n-type. The grain boundaries comprise an active dopant. The active dopant concentration in the grain boundaries is higher than the effective dopant concentration in the grains. The grains and grain boundaries may be of the same type or opposite type. Further, when the grain boundaries are n-type the bottom of the grain boundaries may be p-type. A method of making the absorber layer is also disclosed. | 09-30-2010 |
| 20100276001 | METAL COMPOSITE SUBSTRATE AND METHOD OF PRODUCING THE SAME - A metal composite substrate includes a core made of a metal having higher strength than aluminum at elevated temperatures of at least 300° C. and an aluminum or aluminum alloy layer covering an entire surface of the core, and an anodized film is formed at a surface of the aluminum or aluminum alloy layer. The metal composite substrate having the anodized surface film can produce with high efficiency an insulating flexible support by a roll-to-roll process and has good flatness during the high-temperature heat treatment. | 11-04-2010 |
| 20100282319 | Process for Preparing a Solar Cell - A process for preparing a solar cell comprising a support, a layer of cadmium sulfide (CdS), a layer of cadmium telluride (CdTe), a layer of a transparent conductive oxide (TCO), a conductive metallic layer and optionally a layer of buffer material, the CdS layer and the CdTe layer being deposited by means of a pulsed plasma deposition (PPD) method, a solar cell obtainable by means of the described process being also provided. | 11-11-2010 |
| 20100282320 | Photovoltaic Devices Including an Interfacial Layer - A photovoltaic cell can include an interfacial layer in contact with a semiconductor layer. | 11-11-2010 |
| 20100288358 | REACTED PARTICLE DEPOSITION (RPD) METHOD FOR FORMING A COMPOUND SEMI-CONDUCTOR THIN-FILM - A method is provided for fabricating a thin-film semiconductor device. The method includes providing a plurality of raw semiconductor materials. The raw semiconductor materials undergo a pre-reacting process to form a homogeneous compound semiconductor material. This pre-reaction typically includes processing above the liquidus temperature of the compound semiconductor. The compound semiconductor material is reduced to a particulate form and deposited onto a substrate to form a thin-film having a composition and atomic structure substantially the same as a composition and atomic structure of the compound semiconductor material. | 11-18-2010 |
| 20100300535 | FUSION FORMABLE SODIUM CONTAINING GLASS - Sodium-containing aluminosilicate and boroaluminosilicate glasses are described herein. The glasses can be used as substrates for photovoltaic devices, for example, thin film photovoltaic devices such as CIGS photovoltaic devices. These glasses can be characterized as having strain points ≦540° C., thermal expansion coefficient of from 6.5 to 9.5 ppm/° C., as well as liquidus viscosities in excess of 50,000 poise. As such they are ideally suited for being formed into sheet by the fusion process. | 12-02-2010 |
| 20100300536 | FUSION FORMABLE SODIUM FREE GLASS - A compositional range of fusion-formable, high strain point sodium free, silicate, aluminosilicate and boroaluminosilicate glasses are described herein. The glasses can be used as substrates for photovoltaic devices, for example, thin film photovoltaic devices such as CIGS photovoltaic devices. These glasses can be characterized as having strain points≧540° C., thermal expansion coefficient of from 6.5 to 10.5 ppm/° C., as well as liquidus viscosities in excess of 50,000 poise. As such they are ideally suited for being formed into sheet by the fusion process. | 12-02-2010 |
| 20100307587 | METHODS FOR CONTROLLING OPTICAL PROPERTY OF WAVELENGTH CONVERSION SHEET AND FOR PRODUCING WAVELENGTH CONVERSION SHEET, WAVELENGTH CONVERSION SHEET FOR CADMIUM TELLURIDE SOLAR CELL, AND CADMIUM TELLURIDE SOLAR CELL - The present invention provides a method for controlling an optical property of a wavelength conversion sheet. The method is a method for controlling an optical property of a wavelength conversion sheet that contains a transparent resin and a phosphor and achieves wavelength conversion by absorbing light in a specific wavelength range other than a target wavelength range and emitting light in a target wavelength range, wherein the phosphor contains a phosphor having a perylene skeleton, and a stokes shift of the wavelength conversion sheet is controlled by adjusting a concentration of the phosphor having a perylene skeleton to the transparent resin in a range of 0.5% to 3.5% by weight. | 12-09-2010 |
| 20100307588 | Solar cell structures - Solar cell structures including an n-type semiconductor layer, an i-type semiconductor layer on the n-type semiconductor layer, and a p-type semiconductor layer on the i-type semiconductor layer. The n-type semiconductor layer and the p-type semiconductor layer each respectively contacts a transparent conductive layer having a transparent conductive material. | 12-09-2010 |
| 20100319775 | Method and Apparatus for Annealing a Deposited Cadmium Stannate Layer - A method for manufacturing a multi-layered structure can include annealing a stack, where the annealing can include heating the stack in the presence of an inert gas, and where the stack includes a layer including cadmium and tin. | 12-23-2010 |
| 20110017297 | FUSION FORMABLE SILICA AND SODIUM CONTAINING GLASSES - Sodium containing aluminosilicate and boroaluminosilicate glasses are described herein. The glasses can be used as substrates or superstrates for photovoltaic devices, for example, thin film photovoltaic devices such as CIGS photovoltaic devices. These glasses can be characterized as having strain points≧535° C., for example, ≧570° C., thermal expansion coefficients of from 8 to 9 ppm/° C., as well as liquidus viscosities in excess of 50,000 poise. As such they are ideally suited for being formed into sheet by the fusion process. | 01-27-2011 |
| 20110041917 | Doped Transparent Conductive Oxide - A solar cell with a doped transparent conductive oxide layer is disclosed. The doped transparent conductive oxide layer can improve the efficiency of CdTe-based or other kinds of solar cells. | 02-24-2011 |
| 20110048536 | SOLAR PANELS WITH ADHESIVE LAYERS - The present application is directed to a film they may be used as an adhesive for solar panels. For example, the present application is directed to a composition, for example an adhesive composition, comprising a low crystalline poly-alpha-olefin resin having and an alkoxysilane functional poly-alpha-olefin having a tensile strength of less than 500 MPa. The composition has a melt flow index of less than 30. | 03-03-2011 |
| 20110061736 | PHOTOVOLTAIC BACK CONTACT - A method to preparing Cadmium telluride surface before forming metal back contact is disclosed. The method can include removing carbon from Cadmium telluride surface. | 03-17-2011 |
| 20110061737 | Back Contact in Thin Film Solar Cells - The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device. | 03-17-2011 |
| 20110100460 | MANUFACTURE OF N-TYPE CHALCOGENIDE COMPOSITIONS AND THEIR USES IN PHOTOVOLTAIC DEVICES - A layer of an n-type chalcogenide compositions provided on a substrate in the presence of an oxidizing gas in an amount sufficient to provide a resistivity to the layer that is less than the resistivity a layer deposited under identical conditions but in the substantial absence of oxygen. | 05-05-2011 |
| 20110114181 | ECO-FRIENDLY METHOD OF MANUFACTURING QUANTUM DOTS BY USING NATURAL OIL - The present invention relates to a method for manufacturing quantum dots including mixing a Group II metal precursor and a natural oil and increasing temperature thereof and adding a Group VI chalcogenide precursor to the mixed solution and increasing temperature thereof. According to the present invention, use of a natural oil, instead of any artificially synthesized surfactant, allows mass production of eco-friendly quantum dots. | 05-19-2011 |
| 20110139245 | THIN FILM INTERLAYER IN CADMIUM TELLURIDE THIN FILM PHOTOVOLTAIC DEVICES AND METHODS OF MANUFACTURING THE SAME - A cadmium telluride thin film photovoltaic device is provided having a thin film interlayer positioned between a cadmium sulfide layer and a cadmium telluride layer. The thin film interlayer can be an oxide thin film layer (e.g., an amorphous silica layer, a cadmium stannate layer, a zinc stannate layer, etc.) or a nitride film, and can act as a chemical barrier at the p-n junction to inhibit ion diffusion between the layers. The device can include a transparent conductive layer on a glass superstrate, a cadmium sulfide layer on the transparent conductive layer, a thin film interlayer on the cadmium sulfide layer, a cadmium telluride layer on the thin film interlayer, and a back contact on the cadmium telluride layer. Methods are also provided of manufacturing such devices. | 06-16-2011 |
| 20110139246 | METHODS FOR FORMING A TRANSPARENT CONDUCTIVE OXIDE LAYER ON A SUBSTRATE - Methods of depositing a transparent conductive oxide layer on a substrate are generally disclosed. A shield of greater than about 75% by weight molybdenum can be attached to a first surface of a substrate such that the shield contacts at least about 75% of the first surface. The shield can then be heated via an energy source to cause thermal exchange from the shield to the substrate to heat the substrate to a sputtering temperature. A transparent conductive oxide layer can then be sputtered on a second surface of the substrate at the sputtering temperature. Methods are also generally disclosed for manufacturing a cadmium telluride based thin film photovoltaic device. | 06-16-2011 |
| 20110139247 | GRADED ALLOY TELLURIDE LAYER IN CADMIUM TELLURIDE THIN FILM PHOTOVOLTAIC DEVICES AND METHODS OF MANUFACTURING THE SAME - Cadmium telluride thin film photovoltaic devices are generally disclosed including a graded alloy telluride layer. The device can include a cadmium sulfide layer, a graded alloy telluride layer on the cadmium sulfide layer, and a back contact on the graded alloy telluride layer. The graded alloy telluride layer generally has an increasing alloy concentration and decreasing cadmium concentration extending in a direction from the cadmium sulfide layer towards the back contact layer. The device may also include a cadmium telluride layer between the cadmium sulfide layer and the graded alloy telluride layer. Methods are also generally disclosed for manufacturing a cadmium telluride based thin film photovoltaic device having a graded cadmium telluride structure. | 06-16-2011 |
| 20110139248 | QUANTUM DOT SOLAR CELLS AND METHODS FOR MANUFACTURING SOLAR CELLS - Solar cells, methods for manufacturing a quantum dot layer for a solar cell, and methods for manufacturing solar cells are disclosed. An example method for manufacturing a quantum dot layer for a solar cell includes providing an electron conductor layer, providing a quantum dot chemical bath deposition solution, controlling the temperature of the quantum dot chemical bath deposition solution to a temperature of about 30° C. or greater, and immersing the electron conductor layer in the quantum dot chemical bath deposition solution for about 1-10 hours. The quantum dot chemical bath deposition solution may include CdSe. | 06-16-2011 |
| 20110139249 | High Power Efficiency Polycrystalline CdTe Thin Film Semiconductor Photovoltaic Cell Structures for Use in Solar Electricity Generation - Solar cell structures formed using molecular beam epitaxy (MBE) that can achieve improved power efficiencies in relation to prior art thin film solar cell structures are provided. A reverse p-n junction solar cell device and methods for forming the reverse p-n junction solar cell device using MBE are described. A variety of n-p junction and reverse p-n junction solar cell devices and related methods of manufacturing are provided. N-intrinsic-p junction and reverse p-intrinsic-n junction solar cell devices are also described. | 06-16-2011 |
| 20110146795 | STRUCTURE AND PREPARATION OF CIGS-BASED SOLAR CELLS USING AN ANODIZED SUBSTRATE WITH AN ALKALI METAL PRECURSOR - A template of a thin-film solar cell includes a substrate and an anodized layer. The anodized layer is formed on the substrate, and includes plural pores, wherein alkali halide precursor is filled into the pores for controlling diffused alkaline content. A preparation for fabricating a template of a thin-film solar cell includes steps of: a) providing a substrate; b) anodizing a surface of the substrate to form an anodized layer with plural pores; and c) filling alkali halide precursor into the pores. | 06-23-2011 |
| 20110162715 | SYSTEM AND METHOD FOR REMOVING COATING FROM AN EDGE OF A SUBSTRATE - A coating-removal apparatus may include a source positioned on a mounting plate, and operable to emit a laser beam at a first path, where the mounting plate is configured to receive an edge of a photovoltaic module in a designated region substantially proximate to the mounting plate, such that the first path intersects the designated region, and where the mounting plate is further configured to reposition the source to create an additional path that intersects with the designated region, where the additional path is distinct from the first path. | 07-07-2011 |
| 20110232758 | Thin film photovoltaic cell - A thin film photovoltaic cell is provided having a substrate; a back contact provided on the substrate; a p-type semiconductor absorber layer provided on the back contact; a n-type semiconductor layer provided on the p-type semiconductor absorber layer; a dielectric organic material layer provided on the n-type semiconductor layer; a transparent conductive film provided on the dielectric organic material layer; and, optionally, an antireflective layer provided on the transparent conductive film. Also provided is a method of manufacturing a thin film photovoltaic cell. | 09-29-2011 |
| 20110240123 | Photovoltaic Cells With Improved Electrical Contact - A photovoltaic cell comprising a metal oxide back buffer layer. Improved n-CdS/p-CdTe heterojunction photovoltaic cells comprising a metal oxide buffer layer for making low-resistance electrical contact to the p-type CdTe layer. The back buffer layer comprises metal oxides having a high work function. | 10-06-2011 |
| 20110259423 | METHODS FOR FORMING BACK CONTACT ELECTRODES FOR CADMIUM TELLURIDE PHOTOVOLTAIC CELLS - A method for forming a back contact for a photovoltaic cell that includes at least one semiconductor layer is provided. The method includes applying a continuous film of a chemically active material on a surface of the semiconductor layer and activating the chemically active material such that the activated material etches the surface of the semiconductor layer. The method further includes removing the continuous film of the activated material from the photovoltaic cell and depositing a metal contact layer on the etched surface of the semiconductor layer. | 10-27-2011 |
| 20110259424 | METHOD OF FABRICATING SOLAR CELLS WITH ELECTRODEPOSITED COMPOUND INTERFACE LAYERS - A method of fabricating a solar cell involves electroplating a Group IIB-VIA material as a first or sub-layer over a junction partner layer, and then forming a second layer, also of a Group IIB-VIA material over the sub-layer. Both the sub-layer and the second layer comprise Te. The electroplating is performed at relatively low temperatures, as for example, below 100° C. Forming the sub-layer by low temperature electroplating produces a small grained compact film that protects the interface between the sub-layer and the junction partner during the formation of the second layer. The second layer may be formed by physical vapor deposition or ink deposition. A solar cell has a first layer of a stoichiometric Group IIB-VIA material formed on a CdS film, and a second layer of a Group IIB-V1A material. Both the first and second layers contain Te. The first layer may comprise CdTe with a grain size small than 0.5 microns and the second layer may comprise CdTe with a grin size in the range of 1-5 microns. | 10-27-2011 |
| 20110265874 | CADMIUM SULFIDE LAYERS FOR USE IN CADMIUM TELLURIDE BASED THIN FILM PHOTOVOLTAIC DEVICES AND METHODS OF THEIR MANUFACTURE - Methods are generally provided for forming a cadmium sulfide layer on a substrate. In one particular embodiment, the method can include sputtering a cadmium sulfide layer on a substrate in a sputtering atmosphere comprising an inorganic fluorine source gas. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device. | 11-03-2011 |
| 20110265875 | COPPER AND INDIUM BASED PHOTOVOLTAIC DEVICES AND ASSOCIATED METHODS - Optoelectronic devices having enhanced conversion efficiencies and associated methods are provided. In one aspect, for example, a method of making an optoelectronic device can include applying an absorption layer onto a support substrate, the absorption layer including a material such as CIGS, CIG, CI, CZT, CdTe, and combinations thereof. Additional steps include providing a element-rich environment in proximity to the absorption layer, and irradiating at least a portion of the absorption layer with laser radiation through the element-rich environment thereby incorporating the element into the absorption layer. | 11-03-2011 |
| 20110284078 | METHOD OF FORMING CADMIUM TELLURIDE THIN FILM - A method of forming a metal telluride (MTe) film on a base where M is Cd and optionally additionally may include at least one of Zn, Hg, Mn and Mg, involves depositing a Te-rich precursor layer on a base and reaction of the Te-rich precursor layer with an M-containing material at elevated temperature. The Te-rich precursor film is one of a MTex compound film with an x value larger than 1, a composite film comprising MTe and Te, and a composite film comprising a MTex compound film with an x value larger than 1. In a preferred embodiment the Te-rich precursor layer is electrodeposited. In another preferred embodiment both the Te-rich precursor layer and the M-containing material are electrodeposited. In yet another preferred embodiment the Te-rich precursor film is one of a CdTex compound film with an x value larger than 1, a composite film comprising CdTe and Te, and a composite film comprising a CdTex compound film with an x value larger than 1; and the Te-rich precursor film is reacted with Cd to form a stoichiometric CdTe film on the base. | 11-24-2011 |
| 20110308613 | Photovoltaic Devices with Nanostructure/Conjugated Polymer Hybrid Layer and its Matched Electron Transporting Layer - The present invention discloses a photovoltaic device comprising a multilayer structure for generating and transporting charge, wherein the multilayer structure comprises: a substrate; an anode layer; a hole transporting layer; a first nanostructure/conjugated polymer hybrid layer; an network-shaped electron transporting layer matched to the hybrid layer; and a cathode layer. The mentioned electron transporting layer is composed of a plurality of second nanostructures, and the plurality of second nanostructures is staked on each other, so as to form the interconnecting network. Furthermore, this invention also discloses methods for forming the photovoltaic device. | 12-22-2011 |
| 20120006408 | Alternating Bias Hot Carrier Solar Cells - Designs of extremely high efficiency solar cells are described. A novel alternating bias scheme enhances the photovoltaic power extraction capability above the cell band-gap by enabling the extraction of hot carriers. When applied in conventional solar cells, this alternating bias scheme has the potential of more than doubling their yielded net efficiency. When applied in conjunction with solar cells incorporating quantum wells (QWs) or quantum dots (QDs) based solar cells, the described alternating bias scheme has the potential of extending such solar cell power extraction coverage, possibly across the entire solar spectrum, thus enabling unprecedented solar power extraction efficiency. Within such cells, a novel alternating bias scheme extends the cell energy conversion capability above the cell material band-gap while the quantum confinement structures are used to extend the cell energy conversion capability below the cell band-gap. Light confinement cavities are incorporated into the cell structure in order to allow the absorption of the cell internal photo emission, thus further enhancing the cell efficiency. | 01-12-2012 |
| 20120017990 | PHYLLOSILICATE COMPOSITES CONTAINING MICA - Disclosed is a mica paper composite and a process for making the mica paper composite. Particularly disclosed is a process for chemically planarizing the surface of a mica composite. Articles comprising the mica paper composite are also disclosed. | 01-26-2012 |
| 20120024380 | INTERMIXING OF CADMIUM SULFIDE LAYERS AND CADMIUM TELLURIDE LAYERS FOR THIN FILM PHOTOVOLTAIC DEVICES AND METHODS OF THEIR MANUFACTURE - Cadmium telluride thin film photovoltaic devices are generally disclosed including an intermixed layer of cadmium sulfide and cadmium telluride between a cadmium sulfide layer and a cadmium telluride layer. The intermixed layer generally has an increasing tellurium concentration and decreasing sulfur concentration extending in a direction from the cadmium sulfide layer towards the cadmium telluride layer. Methods are also generally disclosed for manufacturing a cadmium telluride based thin film photovoltaic device having an intermixed layer of cadmium sulfide and cadmium telluride. | 02-02-2012 |
| 20120031490 | QUANTUM DOT SOLAR CELLS AND METHODS FOR MANUFACTURING SUCH SOLAR CELLS - Solar cells, methods for manufacturing a quantum dot layer for a solar cell, and methods for manufacturing solar cells are disclosed. An illustrative method for manufacturing a solar cell may include dissolving a cadmium-containing compound in a first non-aqueous solvent to form a cadmium precursor solution, dissolving a selenium-containing compound in a second non-aqueous solvent to form a selenium precursor solution, combining the cadmium precursor solution with the selenium precursor solution to form a mixed solution, and exposing an electron conductor film to the mixed solution. Exposing the electron conductor film to the mixed solution may cause a cadmium and selenium quantum dot layer to be provided on the electron conductor film. This is just one example method. | 02-09-2012 |
| 20120037229 | PHOTOVOLTAIC GLASS LAMINATED ARTICLES AND LAYERED ARTICLES - Laminated articles and layered articles, for example, low alkali glass and/or low sodium laminated articles and layered articles useful for, for example, photovoltaic devices are described. | 02-16-2012 |
| 20120042950 | p-Doping of CdTe Polycrystalline Thin Film Based on Cd Vacancy Theory - Exemplary embodiments of the present disclosure are directed to improve p-type doping (p-doping) of cadmium telluride (CdTe) for CdTe-based solar cells, such as cadmium Sulfide (Cds)/CdTe solar cells. Embodiments can achieve improved p-doping of CdTe by creating a high density of cadmium (Cd) vacancies (V | 02-23-2012 |
| 20120060922 | LAYERED INORGANIC NANOCRYSTAL PHOTOVOLTAIC DEVICES - A non-sintered structure. The non-sintered structure includes a first non-sintered nanocrystal layer, and a second non-sintered nanocrystal layer wherein the first layer and the second layer are configured to interact electronically. | 03-15-2012 |
| 20120060923 | PHOTOVOLTAIC DEVICE BARRIER LAYER - A structure including a barrier layer adjacent to a substrate, a transparent conductive oxide layer adjacent to the barrier layer, and a buffer layer adjacent to the transparent conductive oxide layer. In the structure, the barrier layer includes a silicon aluminum oxide, the transparent conductive oxide layer includes cadmium and tin and the buffer layer comprises tin oxide. A photovoltaic device that includes the described structure along with a semiconductor window layer adjacent to the buffer layer and a semiconductor absorber layer adjacent to the semiconductor window layer. Methods of manufacturing a photovoltaic structure are also disclosed, as well as a sputter target for use in the manufacture of a photovoltaic device and methods of manufacturing the same. | 03-15-2012 |
| 20120060924 | METHODS AND SYSTEMS FOR FORMING FUNCTIONALLY GRADED FILMS BY SPRAY PYROLYSIS - Method and system for forming a plurality of cadmium-sulfide layers. The method includes preparing a first solution and a second solution. The method further includes loading at least the first solution and the second solution into a pyrolysis-deposition system and placing a target structure into the pyrolysis-depositions system. The method further includes spraying the first solution through one or more first nozzles towards the target structure, forming, from the sprayed first solution, the first cadmium-sulfide layer, directly or indirectly, on the target structure, spraying the second solution through one or more second nozzles towards the target structure with at least the first cadmium-sulfide layer, and forming, from the sprayed second solution, the second cadmium-sulfide layer directly or indirectly, on the target structure. The first cadmium-sulfide layer includes a first cadmium-sulfide material the second cadmium-sulfide layer includes a second cadmium-sulfide material that are different in at least one material property. | 03-15-2012 |
| 20120067421 | PHOTOVOLTAIC DEVICE WITH A ZINC MAGNESIUM OXIDE WINDOW LAYER - Methods and devices are described for a photovoltaic device and substrate structure. In one embodiment, a photovoltaic device includes a substrate structure and a CdTe absorber layer, the substrate structure including a Zn | 03-22-2012 |
| 20120067422 | PHOTOVOLTAIC DEVICE WITH A METAL SULFIDE OXIDE WINDOW LAYER - Methods and devices are described for a photovoltaic device and substrate structure. In one embodiment, a photovoltaic device includes a substrate structure and a MS | 03-22-2012 |
| 20120073657 | Alternating Bias Hot Carrier Solar Cells - Extremely high efficiency solar cells are described. Novel alternating bias schemes enhance the photovoltaic power extraction capability above the cell band-gap by enabling the extraction of hot carriers. In conventional solar cells, this alternating bias scheme has the potential of more than doubling their yielded net efficiency. In solar cells incorporating quantum wells (QWs) or quantum dots (QDs), the alternating bias scheme has the potential of extending such solar cell power extraction coverage, possibly across the entire solar spectrum, thus enabling unprecedented solar power extraction efficiency. Within such cells, a novel alternating bias scheme extends the cell energy conversion capability above the cell material band-gap while the quantum confinement structures are used to extend the cell energy conversion capability below the cell band-gap. Light confinement cavities are incorporated into the cell structure to allow the absorption of the cell internal photo emission, thus further enhancing the cell efficiency. | 03-29-2012 |
| 20120080090 | Transparent conductor film stack with cadmium stannate, corresponding photovoltaic device, and method of making same - Certain example embodiments relate to a transparent conductor film stack with cadmium stannate used as a front contact layer and/or a buffer layer in a photovoltaic device or the like. The cadmium stannate-based layers may be provided between the front glass substrate and the semiconductor absorber film in a photovoltaic device (e.g., a CdS and/or CdTe based photovoltaic device). In certain example embodiments, the buffer layer based on cadmium stannate may have a higher resistivity than the transparent conductive oxide layer based on cadmium stannate. In certain example embodiments, one or more index matching layer(s) may be provided between the glass substrate and the layer(s) comprising cadmium stannate, e.g., to help overcome the optical mismatch between the glass substrate and the CdSnOx. | 04-05-2012 |
| 20120085409 | METHOD FOR ENHANCING THE CONVERSION EFFICIENCY OF CdSe-QUANTUM DOT SENSITIZED SOLAR CELLS - CdSe-quantum dots are formed on a TiO | 04-12-2012 |
| 20120085410 | FLEXIBLE QUANTUM DOT SENSITIZED SOLAR CELLS - A flexible solar cell is assembled by forming a TiO | 04-12-2012 |
| 20120090683 | METHOD AND SUBSTRATES FOR MAKING PHOTOVOLTAIC CELLS - Methods of and apparatuses for making a photovoltaic cell are provided. The photovoltaic cell is able to have a substrate made of a composite material. The composite material is able to be formed by mixing a binder and a physical property enhancing material to form a mixer. The binder is able to be pitch, such as mesophase pitch. The physical property enhancing material is able to be fiber glass. The substrate of the photovoltaic cell is able to be flexible, such that the photovoltaic cell is able to be applied on various surfaces. | 04-19-2012 |
| 20120111408 | CONTROLLED CARBON DEPOSITION - A coating of a photovoltaic device can include a self-assembled monolayer of molecules. | 05-10-2012 |
| 20120132281 | THIN-FILM SOLAR CELL AND MANUFACTURING METHOD THEREOF - A thin-film solar cell and a manufacturing method thereof are disclosed. The method of manufacturing the thin-film solar cell includes the steps of providing a substrate; forming a diffusion barrier layer on the substrate; forming a back electrode layer on the diffusion barrier layer; forming a precursor layer on the back electrode layer, and the precursor layer including at least Cu, In and Ga; providing an alkali layer on an upper surface of the precursor layer, and the alkali layer being formed of Li, Na, K, Rb, Cs, or an alkali metal compound; providing a selenization process for the precursor layer and the alkali layer to form an absorber layer, such that an atomic percentage concentration of the alkali metal in the absorber layer is ranged between 0.01%˜10%; forming at least a buffer layer on the absorber layer; and forming at least a front electrode layer on the buffer layer. | 05-31-2012 |
| 20120132282 | ALKALI-FREE HIGH STRAIN POINT GLASS - A compositional range of high strain point alkali metal free, silicate, aluminosilicate and boroaluminosilicate glasses are described herein. The glasses can be used as substrates for photovoltaic devices, for example, thin film photovoltaic devices such as CIGS photovoltaic devices. These glasses can be characterized as having strain points ≧570° C., thermal expansion coefficient of from 5 to 9 ppm/° C. | 05-31-2012 |
| 20120132283 | CADMIUM TELLURIDE SOLAR CELL AND METHOD OF FABRICATING THE SAME - A thin film solar cell includes a buffer layer disposed between a transparent conductive layer and a junction partner layer. The solar cell has an absorber layer made from a Group II-VI compound which is in contact with the junction partner layer. The buffer layer is made from at least one of cadmium doped tin oxide, indium sulfide, tin doped indium sulfide, gallium sulfide and tin doped gallium sulfide. | 05-31-2012 |
| 20120152351 | PHOTOVOLTAIC DEVICE - In general, a photovoltaic module may include a binary semiconductor layer formed from a vapor rich in one component of a binary semiconductor source. | 06-21-2012 |
| 20120192948 | HIGH EFFICIENCY CADMIUM TELLURIDE SOLAR CELL AND METHOD OF FABRICATION - A method of forming an ohmic contact and electron reflector on a surface of a CdTe containing compound film as may be found, for example in a photovoltaic cell. The method comprises forming a Cd-deficient, Te-rich surface region at a surface of the CdTe containing compound film; exposing the Cd-deficient surface region to an electron reflector forming material; forming the electron reflector; and laying down a contact layer over the electron reflector layer. The solar cell so produced has a Cd-deficient region which is converted to an electron reflector layer on the surface of a CdTe absorber layer, and an ohmic contact. A Cd/Te molar ratio within the Cd-deficient region decreases from 1 at an interface with the CdTe absorber layer to a value less than 1 towards the ohmic contact. | 08-02-2012 |
| 20120222742 | COMPOUND THIN FILM SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME - A compound thin film solar cell of an embodiment includes: as a light-absorbing layer a semiconductor thin film which contains Cu, an element A (A is at least one element selected from a group consisting of Al, In and Ga) and Te, and has a chalcopyrite crystal structure, wherein a buffer layer that forms an interface with the light-absorbing layer is a compound which contains at least one element selected from Cd, Zn and a group consisting of In and Ga and at least one element selected from a group consisting of S, Se and Te, and has any crystal structure of a sphalerite structure, a wurtzite structure and a defect spinel structure, and a lattice constant “a” of the buffer layer with the sphalerite structure or a lattice constant “a” of the buffer layer at the time of converting the wurtzite structure or the defect spinel structure to the sphalerite structure is not smaller than 0.59 nm and not larger than 0.62 nm. | 09-06-2012 |
| 20130000726 | THIN FILM PHOTOVOLTAIC CELL, A METHOD FOR MANUFACTURING, AND USE - A thin film photovoltaic cell ( | 01-03-2013 |
| 20130019948 | STABILIZED BACK CONTACT FOR PHOTOVOLTAIC DEVICES AND METHODS OF THEIR MANUFACTURE - Thin film photovoltaic devices including a thin film stabilization layer between the photovoltaic heterojunction and a back contact are provided. The thin film stabilization layer generally includes cadmium sulfide, but may also include copper and/or other materials. Methods are also provided for forming a thin film photovoltaic device via forming a thin film stabilization layer on a photovoltaic heterojunction (that generally overlies a transparent conductive oxide layer on a transparent substrate) and forming a back contact on the thin film stabilization layer. | 01-24-2013 |
| 20130074933 | PHOTOVOLTAIC DEVICE AND METHOD FOR MAKING THE SAME - A photovoltaic device includes: a back electrode; a transparent front electrode; a p-type semiconductor layer disposed between the transparent front electrode and the back electrode and made from a first semiconductor compound including M | 03-28-2013 |
| 20130104985 | PHOTOVOLTAIC DEVICE WITH MANGENESE AND TELLURIUM INTERLAYER | 05-02-2013 |
| 20130104986 | SOLAR CELLS AND METHODS OF MANUFACTURING THE SAME | 05-02-2013 |
| 20130112273 | SOLAR CELL - The present invention provides a semiconductor film which adapts to the solar cell in both of band gap and electric resistivity or carrier concentration. | 05-09-2013 |
| 20130133745 | INCORPORATION OF ALKALINE EARTH IONS INTO ALKALI-CONTAINING GLASS SURFACES TO INHIBIT ALKALI EGRESS - Leaching alkali ions from a glass substrate to form a glass substrate having an intrinsic alkali barrier layer includes providing a glass substrate comprising alkali metal ions and having at least two opposing surfaces and a thickness between the surfaces, and contacting at least one of the surfaces of the substrate with a solution comprising alkaline earth salts in either water or as a melted salt bath such that at least a portion of the alkali metal ions are replaced by alkaline earth metal ions in the at least one surface and into the thickness to form the glass substrate having an intrinsic alkali barrier layer. | 05-30-2013 |
| 20130206231 | ELECTRON-DEFICIENT FLUOROUS PORPHYRINS AND METHODS OF MAKING AND THEIR USE IN ORGANIC SOLAR CELLS - Electron-deficient fluorous porphyrin molecules may have dual functions of light harvesting and electron accepting or donating and may be ideally suited for use in organic solar cells. Methods of making electron-deficient fluorous porphyrin molecules are described. | 08-15-2013 |
| 20130255779 | INTERMEDIATE THERMAL EXPANSION COEFFICIENT GLASS - CTE-matched silicate glasses and more particularly to low-alkali CTE-matched silicate glasses that are useful in semiconductor-based applications, such as photovoltaics are described along with methods of making such glasses. | 10-03-2013 |
| 20140000712 | NIOBIUM THIN FILM STRESS RELIEVING LAYER FOR THIN-FILM SOLAR CELLS | 01-02-2014 |
| 20140083505 | VARYING CADMIUM TELLURIDE GROWTH TEMPERATURE DURING DEPOSITION TO INCREASE SOLAR CELL RELIABILITY - A method for forming thin films or layers of cadmium telluride (CdTe) for use in photovoltaic modules or solar cells. The method includes varying the substrate temperature during the growth of the CdTe layer by preheating a substrate (e.g., a substrate with a cadmium sulfide (CdS) heterojunction or layer) suspended over a CdTe source to remove moisture to a relatively low preheat temperature. Then, the method includes directly heating only the CdTe source, which in turn indirectly heats the substrate upon which the CdTe is deposited. The method improves the resulting CdTe solar cell reliability. The resulting microstructure exhibits a distinct grain size distribution such that the initial region is composed of smaller grains than the bulk region portion of the deposited CdTe. Resulting devices exhibit a behavior suggesting a more n-like CdTe material near the CdS heterojunction than devices grown with substrate temperatures held constant during CdTe deposition. | 03-27-2014 |
| 20140130868 | Spray Deposition Method for Inorganic Nanocrystal Solar Cells - A method of spray deposition for inorganic nanocrystal solar cells comprising subjecting a first solution of CdTe or CdSe nanocrystals to ligand exchange with a small coordinating molecule, diluting the first solution in solvent to form a second solution, applying the second solution to a substrate, drying the substrate, dipping the substrate in a solution in MeOH of a compound that promotes sintering, washing the substrate with iPrOH, drying the substrate with N | 05-15-2014 |
| 20140130869 | Inorganic Nanocrystal Solar Cells - An inorganic nanocrystal solar cell comprising a substrate, a layer of metal, a layer of CdTe, a layer of CdSe, and a layer of transparent conductor. An inorganic nanocrystal solar cell comprising a transparent conductive substrate, a layer of CdSe, a layer of CdTe, and a Au contact. A method of spray deposition for inorganic nanocrystal solar cells comprising subjecting a first solution of CdTe or CdSe nanocrystals to ligand exchange with a small coordinating molecule, diluting the first solution in solvent to form a second solution, applying the second solution to a substrate, drying the substrate, dipping the substrate in a solution in MeOH of a compound that promotes sintering, washing the substrate with iPrOH, drying the substrate with N | 05-15-2014 |
| 20140137942 | Ink composition, thin film solar cell and methods for forming the same - An ink composition, a thin film solar cell and method for forming the thin film solar cell are disclosed. The ink composition includes a solvent system, a source of Cu, a source of Zn, a source of Sn, a source of S and/or Se, and a source of group III element, wherein the ink composition is adapted in forming a I-II-IV-VI thin film solar cell to increase a fill factor of the I-II-IV-VI thin film solar cell. | 05-22-2014 |
| 20140150867 | Fusion Formable Silica and Sodium Containing Glasses - Sodium containing aluminosilicate and boroaluminosilicate glasses are described herein. The glasses can be used as substrates or superstrates for photovoltaic devices, for example, thin film photovoltaic devices such as CIGS photovoltaic devices. These glasses can be characterized as having strain points ≧535° C., for example, ≧570° C., thermal expansion coefficients of from 8 to 9 ppm/° C., as well as liquidus viscosities in excess of 50,000 poise. As such they are ideally suited for being formed into sheet by the fusion process. | 06-05-2014 |
| 20140166107 | Back-Contact Electron Reflectors Enhancing Thin Film Solar Cell Efficiency - Methods for improving the efficiency of solar cells are disclosed. A solar cell consistent with the present disclosure includes a back contact metal layer disposed on a substrate. The solar cell also includes an electron reflector material(s) layer formed on the back contact metal layer and an absorber material(s) layer disposed on the electron reflector material(s) layer. In addition, the solar cell includes a buffer material(s) layer formed on the absorber material(s) layer wherein the electron reflector material(s) layer, absorber material(s) layer, and buffer material(s) layer form a pn junction within the solar cell. Furthermore, a TCO material(s) layer is formed on the buffer material(s) layer. In addition, the front contact layer is formed on the TCO material(s) layer. | 06-19-2014 |
| 20140216550 | Photovoltaic Device Including a P-N Junction and Method of Manufacturing - A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer, the substrate structure including a CdSSe layer. A photovoltaic device may alternatively include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSSe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming a p-type absorber layer above the CdSSe layer. | 08-07-2014 |
| 20140261685 | THIN FILM PHOTOVOLTAIC DEVICE WTIH LARGE GRAIN STRUCTURE AND METHODS OF FORMATION - Embodiments include photovoltaic devices that include at least one absorber layer, e.g. CdTe and/or CdS | 09-18-2014 |
| 20140261686 | PHOTOVOLTAIC DEVICE WITH A ZINC OXIDE LAYER AND METHOD OF FORMATION - Photovoltaic devices with a zinc oxide layer replacing all or part of at least one of a window layer and a buffer layer, and methods of making the devices. | 09-18-2014 |
| 20140261687 | METHOD OF REDUCING SEMICONDUCTOR WINDOW LAYER LOSS DURING THIN FILM PHOTOVOLTAIC DEVICE FABRICATION, AND RESULTING DEVICE STRUCTURE - A completed photovoltaic device and method forming it are described in which fluxing of a window layer into an absorber layer is mitigated by the presence of a sacrificial fluxing layer. | 09-18-2014 |
| 20140261688 | HIGH EFFICIENCY PHOTOVOLTAIC DEVICE EMPLOYING CADMIUM SULFIDE TELLURIDE AND METHOD OF MANUFACTURE - A photovoltaic device is disclosed including at least one Cadmium Sulfide Telluride (CdS | 09-18-2014 |
| 20140261689 | METHOD OF MANUFACTURING A PHOTOVOLTAIC DEVICE - A photovoltaic device is disclosed, the device having a zinc-containing layer, such as a ZnO | 09-18-2014 |
| 20140283913 | Molybdenum Substrates for CIGS Photovoltaic Devices - Photovoltaic (PV) devices and solution-based methods of making the same are described. The PV devices include a CIGS-type absorber layer formed on a molybdenum substrate. The molybdenum substrate includes a layer of low-density molybdenum proximate to the absorber layer. The presence of low-density molybdenum proximate to the absorber layer has been found to promote the growth of large grains of CIGS-type semiconductor material in the absorber layer. | 09-25-2014 |
| 20140318623 | PHOTOVOLTAIC SEMICONDUCTOR MATERIALS BASED ON ALLOYS OF TIN SULFIDE, AND METHODS OF PRODUCTION - Photovoltaic thin-film materials comprising crystalline tin sulfide alloys of the general formula Sn | 10-30-2014 |
| 20140326315 | PHOTOVOLTAIC DEVICES AND METHOD OF MAKING - A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer comprises selenium, wherein an atomic concentration of selenium varies across a thickness of the absorber layer. The photovoltaic device is substantially free of a cadmium sulfide layer. | 11-06-2014 |
| 20150007890 | PHOTOVOLTAIC DEVICE COMPRISING HEAT RESISTANT BUFFER LAYER, AND METHOD OF MAKING THE SAME - A photovoltaic device includes a substrate, a back contact layer disposed above the substrate, an absorber layer comprising an absorber material disposed above the back contact layer, and a buffer layer disposed above the absorber layer. The buffer layer includes a first layer comprising the absorber material doped with zinc, and a second layer comprising a zinc-containing compound and a cadmium-containing compound. | 01-08-2015 |
| 20150096617 | COMPOUND SEMICONDUCTOR SOLAR BATTERY - A compound semiconductor solar battery according to the present invention includes a substrate; a back electrode disposed on the substrate; a p-type compound semiconductor light absorbing layer disposed on the back electrode; an n-type compound semiconductor buffer layer disposed on the p-type compound semiconductor light absorbing layer; and a transparent electrode disposed on the n-type compound semiconductor buffer layer. The p-type compound semiconductor light absorbing layer has a cross sectional structure including, in a thickness direction, a portion only of a single particle and a portion of a plurality of piled particles. In the portion of a plurality of piled particles, the particles in contact with the back electrode have a ratio y1 of Ga/(In+Ga), and the particles in contact with the n-type compound semiconductor buffer layer have a ratio y2 of Ga/(In+Ga), where y1>y2. | 04-09-2015 |
| 20150144195 | PEROVSKITE AND OTHER SOLAR CELL MATERIALS - Photovoltaic devices such as solar cells, hybrid solar cell-batteries, and other such devices may include an active layer having perovskite material and copper-oxide or other metal-oxide charge transport material. Such charge transport material may be disposed adjacent to the perovskite material such that the two are adjacent and/or in contact. Inclusion of both materials in an active layer of a photovoltaic device may improve device performance. Other materials may be included to further improve device performance, such as, for example: one or more interfacial layers, one or more mesoporous layers, and one or more dyes. | 05-28-2015 |
| 20150325735 | PHOTOVOLTAIC DEVICE WITH A ZINC MAGNESIUM OXIDE WINDOW LAYER - Methods and devices are described for a photovoltaic device and substrate structure. In one embodiment, a photovoltaic device includes a substrate structure and a CdTe absorber layer, the substrate structure including a Zn | 11-12-2015 |
| 20150357502 | GROUP IIB-VIA COMPOUND SOLAR CELLS WITH MINIMUM LATTICE MISMATCH AND REDUCED TELLURIUM CONTENT - A thin film solar cell structure is disclosed, the solar cell structure comprising a CdSe | 12-10-2015 |
| 20150372180 | OXYGEN DOPED CADMIUM MAGNESIUM TELLURIDE ALLOY - A band gap material includes an alloy of cadmium, tellurium and magnesium. The alloy is doped with oxygen wherein the alloy includes an intermediate band positioned between conduction and valance bands of the alloy. The alloy has the formula: Cd | 12-24-2015 |
| 20150380572 | METHOD OF PROVIDING CHLORIDE TREATMENT FOR A PHOTOVOLTAIC DEVICE AND A CHLORIDE TREATED PHOTOVOLTAIC DEVICE - A method of manufacturing a photovoltaic device including depositing a cadmium telluride layer onto a substrate; treating the cadmium telluride layer with a compound comprising chlorine and an element from Groups 1-11, zinc, mercury, or copernicium or a combination thereof; and annealing the cadmium telluride layer. A chloride-treated photovoltaic device. | 12-31-2015 |
| 20160005885 | Method of Making Photovoltaic Devices - A photovoltaic device is presented. The photovoltaic device includes a buffer layer disposed on a transparent conductive oxide layer; a window layer disposed on the buffer layer; and an interlayer interposed between the transparent conductive oxide layer and the window layer. The interlayer includes: (i) a compound including magnesium and a metal species, wherein the metal species includes tin, indium, titanium, or combinations thereof; or (ii) a metal alloy including magnesium; or (iii) a compound comprising magnesium and fluorine; or (iv) combinations thereof. Method of making a photovoltaic device is also presented. | 01-07-2016 |
| 20160079552 | PEROVSKITE SOLAR CELL - The present invention relates to a perovskite solar cell, which comprises a first electrode substrate; a perovskite material layer comprising a perovskite organic-inorganic material and a polymer additive, wherein the perovskite material layer is disposed above the first electrode substrate; and a second electrode, which is disposed above the perovskite material layer and corresponds to the first electrode substrate. The coverage of the perovskite material layer on the electrode or an electron-transport layer is significantly improved, and the roughness thereof is also decreased, thereby increasing the photoelectric conversion efficiency of the perovskite solar cell. | 03-17-2016 |
| 20160163899 | FUSION FORMABLE SODIUM FREE GLASS - A compositional range of fusion-formable, high strain point sodium free, silicate, aluminosilicate and boroaluminosilicate glasses are described herein. The glasses can be used as substrates for photovoltaic devices, for example, thin film photovoltaic devices such as CIGS photovoltaic devices. These glasses can be characterized as having strain points ≧540° C., thermal expansion coefficient of from 6.5 to 10.5 ppm/° C., as well as liquidus viscosities in excess of 50,000 poise. As such they are ideally suited for being formed into sheet by the fusion process. | 06-09-2016 |
| 20160181452 | COMPOUND SOLAR CELL AND METHOD FOR FORMING THIN FILM HAVING SULFIDE SINGLE-CRYSTAL NANOPARTICLES | 06-23-2016 |
