Class / Patent application number | Description | Number of patent applications / Date published |
134028000 | One an acid or an acid salt | 42 |
20080295868 | Manufacturing method of a semiconductor device and substrate cleaning apparatus - A method of manufacturing a semiconductor device which has a cleaning process for cleaning a surface of a substrate while rotating the substrate. The cleaning process includes the steps of cleaning the substrate surface by supplying a cleaning liquid to the substrate; rinsing the cleaned substrate surface by supplying a rinse liquid containing pure water to the substrate; and drying the rinsed substrate. In the rinsing step, HF is added to the rinse liquid. | 12-04-2008 |
20080314416 | Method and Composition For Removing Biological Fouling From Surfaces in Contact With Water - A composition and method for the removal of biological fouling from wetted surfaces intermittently or continuously in contact with water is disclosed. The method includes the steps of preparing a cleaning composition of basic pH from a strong base and an active oxygen donor component, applying the composition to the surface to be cleaned, and after a selected residence time, removing any unreacted cleaning composition and all removed fouling by rinsing or flushing with water. | 12-25-2008 |
20090000648 | Method and device for preparing a medical instrument - The present invention relates to a method for preparing a medical instrument, in particular a handpiece, with the method involving the following steps: pre-rinsing the instrument with a pre-rinsing liquid whose temperature is below the coagulation temperature of protein; rinsing the instrument with a liquid mixture that comprises water and an enzymatic cleaning agent, wherein the liquid mixture comprises a temperature of 40° C. to 70° C.; disinfecting the instrument with a liquid mixture that comprises water and an oxidant, wherein the liquid mixture has a minimum temperature of 50° C. The invention further relates to a device for implementing such a method. | 01-01-2009 |
20090000649 | METHOD FOR CLEANING WAFER - A method for cleaning a wafer by removing residues from the surface of a wafer where metals are reacted to form compounds. The cleaning method may include first residue from predetermined areas of the wafer (e.g., uppermost surface of the gate electrode and/or source/drain regions where suicides are formed) using at least one selected from a sulfuric acid cleaning solution, a first mixed cleaning solution and a second mixed cleaning solution, then removing oxide films from the predetermined areas using a diluted hydrofluoric acid cleaning solution, and then removing a second residue derived from the removal of the oxide films using the first mixed cleaning solution. Accordingly, the method efficiently removes the first and second residues left on the surfaces of the predetermined areas. | 01-01-2009 |
20090183755 | Cleaning Process - A method of machine cleaning dishes in a dishwasher, wherein over the course of a cleaning program, having a pre-rinsing operation and a cleaning operation, two liquid cleansers A and B having the following composition: A: −10 to 75 wt % of builder(s); −0.1 to 10 wt % of enzyme(s); −24.9 to 89.9 wt % of solvent; and B: −10 to 74.9 wt % of builder(s); −25 to 89.9 wt % of solvent; are metered into the wash bath at two successive times t | 07-23-2009 |
20090188533 | COMPOSITION AND METHOD FOR ROAD-FILM REMOVAL - A concentrate and a ready-to-use or diluted formulation for an aqueous vehicle cleaner can remove a wide range of different types of traffic film using either low pressure application, hand pressure application, water jet spray apparatus, clean-in-place systems or other manual or mechanical washing systems. The compositions may comprise, for example, one or more solutions that each or collectively contain or comprises:
| 07-30-2009 |
20090260659 | LIMESCALE AND SOAP SCUM REMOVING COMPOSITION CONTAINING METHANE SULFONIC ACID - A cleaning composition including an acid component is provided, along with methods for using the composition to remove soil from hard surfaces. The concentrate cleaning composition includes between about 1 and about 70 wt % of methane sulfonic acid, about 0.1 to about 15 wt % of a surfactant component, up to about 90% of a solvent and other adjuvants. | 10-22-2009 |
20090277480 | METHOD OF REDUCING SURFACE RESIDUAL DEFECT - A method of reducing residual defect on a dielectric surface includes performing a treatment process of the dielectric surface prior to a lithograph process. The treatment process includes at least a first wet chemical treatment step and a second wet chemical treatment step. | 11-12-2009 |
20100043836 | Tool cleaning apparatus and method - An apparatus and method for cleaning tools such as laminating tools used in the manufacture of glass reinforced plastic. The apparatus includes a bath having two sections, each containing a cleaning fluid such as an ester solvent and an aqueous solvent respectively, and a heating tank placed under the sections so that the solvents can be heated. In use, an operator cleans a tool in each section in turn. Additional features include a compressed air drier, filters to remove solid deposits, barriers and a bunded base to prevent spillage or leakage, and drains to remove the fluids from each section. | 02-25-2010 |
20100132746 | Apparatus and method for washing polycrystalline silicon - Disclosed is a polycrystalline silicon washing apparatus that sequentially immerses polycrystalline silicon into a plurality of acid baths each of which is filled with an acid to wash the polycrystalline silicon. The temperatures of the acids in the acid baths are set such that the temperature of the acid in a later acid bath of adjacent acid baths is equal to or lower than that of a former acid bath and the temperature of the acid in the last acid bath is lower than that of the acid in the first acid bath. Each of the acid baths is provided with a temperature adjusting unit that controls the temperature of the acid at a constant value. | 06-03-2010 |
20100139705 | SOLID DISHMACHINE DETERGENT NOT REQUIRING A SEPARATE RINSE ADDITIVE - New solid detergent compositions and methods of forming and using those compositions are provided. The compositions for forming the solid detergents comprise a copolymer, scale inhibiting agent, and non-phosphate builder dispersed or dissolved in a solvent system. Advantageously, the inventive solid detergents provide dramatically improved cleaning performance and drying time without the use of a separate rinse additive. The detergents are especially suited to commercial dishmachine processes. The solid detergents are also in the form of a solid, homogeneous, self-sustaining body for improved handling and use. | 06-10-2010 |
20100139706 | Method For The Treatment Of A Semiconductor Wafer - Semiconductor wafers are treated in a liquid container filled at least partly with a solution containing hydrogen fluoride, such that surface oxide dissolves, are transported out of the solution along a transport direction and dried, and are then treated with an ozone-containing gas to oxidize the surface of the semiconductor wafer, wherein part of the semiconductor wafer surface comes into contact with the ozone-containing gas while another part of the surface is still in contact with the solution, and wherein the solution and the ozone-containing gas are spatially separated such that they do not come into contact with one another. | 06-10-2010 |
20100229898 | METHOD FOR CLEANING SURFACES OF POLYOLEFIN-BASED MATERIALS SOILED WITH FOOD, PARTICULARLY DAIRY PRODUCTS - The invention relates to a method for cleaning surfaces of polyolefin-based materials soiled with food, particularly dairy products. More specifically, the invention relates to a method for cleaning materials based on one or more halogenated or non-halogenated polyolefins and soiled with food, particularly dairy products, which method is particularly safe for the environment, but also for the soiled polyolefin-based material with minimal wear and tear. According to the invention, the soiled material is brought into contact with an aqueous composition based on alkane sulfonic acids having between 1 and 4 carbon atoms. | 09-16-2010 |
20110073139 | METHOD FOR REMOVING A CATALYST INHIBITOR FROM A SUBSTRATE - This invention is directed to a process for removing a catalyst inhibitor from a substrate or catalytic converter containing at least one nitrogen oxide (NO | 03-31-2011 |
20110079250 | POST-TEXTURING CLEANING METHOD FOR PHOTOVOLTAIC SILICON SUBSTRATES - An improved method for post-texturing cleaning, surface conditioning, and rinsing silicon wafers or similar surfaces, with particular, although not exclusive, applicability in photovoltaic applications which includes cleaning the surfaces sequentially with dilute HF/HCl and dilute oxidizing rinse, particularly following texturing with concentrated HF/HNO3 and/or KOH. The method allows for the recycling of the oxidizing rinse in the dilute HF/HCl and other upstream rinse steps. | 04-07-2011 |
20110088729 | SURFACE PASSIVATION TECHNIQUE FOR REDUCTION OF FOULING - The invention provides a method and apparatus for controlling the formation of foulant deposits on petroleum processing equipment. The invention involves a first mixture comprising an acid phosphate ester. The first mixture is applied to the surface of the petroleum processing equipment at a high temperature. Then a second mixture comprising a metal salt is applied also at a high temperature. The result is sufficient to provide an effective coating that prevents the formation of foulant deposits on the petroleum processing equipment. The second mixture reacts with any polyphosphate in the coating to prevent any contamination of petroleum materials within the petroleum processing equipment. | 04-21-2011 |
20110146726 | PROCESS FOR CLEANING SEMICONDUCTOR ELEMENT - In a wiring formation process for a semiconductor device, the resist residue forming in dry etching with a reactive gas and aching with a plasma gas is removed, not corroding the members of the semiconductor device such as the interlayer insulating material and the wiring material thereof, and the device is protected from after-corrosion to occur after left for a given period of time after the treatment. | 06-23-2011 |
20110146727 | COMBINATORIAL APPROACH TO THE DEVELOPMENT OF CLEANING FORMULATIONS FOR GLUE REMOVAL IN SEMICONDUCTOR APPLICATIONS - Embodiments of the current invention describe cleaning solutions to clean the surface of a photomask, methods of cleaning the photomask using at least one of the cleaning solutions, and combinatorial methods of formulating the cleaning solutions. The cleaning solutions are formulated to preserve the optical properties of the photomask, and in particular, of a phase-shifting photomask. | 06-23-2011 |
20110186087 | PROCESS FOR PURIFYING POLYCRYSTALLINE SILICON - Polysilicon is freed of metallic impurities without the use of HCl or H | 08-04-2011 |
20110214697 | SUBSTRATE CLEAN SOLUTION FOR COPPER CONTAMINATION REMOVAL - Embodiments of the invention generally relate to a method for selectively etching or otherwise removing copper or other metallic contaminants from a substrate, such as a gallium arsenide wafer. In one embodiment, a method for selectively removing metallic contaminants from a substrate surface is provided which includes exposing a substrate to a peroxide clean solution, exposing the substrate to a hydroxide clean solution, and exposing the substrate to a selective etch solution containing potassium iodide, iodine, sulfuric acid, and water during a selective etch process. The substrate generally contains gallium arsenide material, such as crystalline gallium arsenide, and is usually a growth substrate for an epitaxial lift off (ELO) process. The copper or other metallic contaminants disposed on the substrate may be selectively etched at a rate of about 500 times, about 1,000 times, about 2,000 times, or about 4,000 times or greater than the gallium arsenide material. | 09-08-2011 |
20110253177 | METHOD OF WASHING POLYCRYSTALLINE SILICON, APPARATUS FOR WASHING POLYCRYSTALLINE SILICON, AND METHOD OF PRODUCING POLYCRYSTALLINE SILICON - A method of washing polycrystalline silicon is provided. The method includes a step of acid cleaning in which the polycrystalline silicon is cleaned with an acid solution and a step of a water cleaning in which the polycrystalline silicon is cleaned by pure water after the step of acid cleaning. In the step of water cleaning, residual acid solution on the surface of the polycrystalline silicon is removed by immersing the polycrystalline silicon in pure water held in a water cleaning bath, and replacing the pure water in the water cleaning bath at least once. The electrical conductivity (C) of the pure water in the water cleaning bath is measured. Based on the reading of the electrical conductivity (C), the timing for finishing the step of water cleaning is decided. | 10-20-2011 |
20120037191 | CLEANING SEQUENCE FOR OXIDE QUALITY MONITORING SHORT-LOOP SEMICONDUCTOR WAFER - Disclosed herein are methods for novel cleaning processes for inline quality monitoring short-loop semiconductor wafers. In one embodiment, an exemplary process may comprise immersing the short-loop wafer in an SC-2 aqueous solution comprising hydrochloric acid and hydrogen peroxide at a temperature of about 60° C., and for a time period of about 600 seconds, and then rinsing the wafer with deionized water to remove residual SC-2 solution immediately following immersing the wafer in the SC-2 solution. This exemplary method may then comprise immersing the short-loop wafer in an SC-1 aqueous solution comprising ammonia and hydrogen peroxide immediately after rinsing the wafer to remove residual SC-2 solution, and then rinsing the wafer with deionized water to remove residual SC-1 solution immediately following immersing the wafer in the SC-1 solution. In such a method, however, the wafer is immersed in an HF aqueous solution comprising hydrofluoric acid immediately prior to immersing the wafer in the SC-2 solution, or immediately after immersing the wafer in the SC-1 solution. | 02-16-2012 |
20120055516 | OPTICAL FIBER STRIPPER APPARATUS AND METHOD - In some embodiments, a method includes positioning an outlet of an acid dispenser adjacent to a first portion of an optical fiber. The method includes directing heated acid from the acid dispenser into contact with the first portion of the optical fiber and into a holding tank such that a portion of a coating of the optical fiber is removed to expose a cladding of the optical fiber. The method includes positioning an outlet of a fluid dispenser adjacent to a second portion of the optical fiber. The method includes directing a fluid pressurized at a substantially constant level from the fluid dispenser into contact with the second portion of the optical fiber and into the holding tank such that at least a portion of the heated acid is displaced from the cladding. | 03-08-2012 |
20120080058 | Application of Rejection Enhancing Agents (REAs) that do not have Cloud Point Limitations on Desalination Membranes - Methods of treating used or degraded reverse osmosis membranes post-production are provided. The membranes can be treated online or offline. The reverse osmosis membranes are cleaned and then contacted with a rejection enhancing agent solution that includes polyvinylpyrrolidone or polyvinylalcohol. The reverse osmosis membrane is then contacted with a tannic acid solution to produce a reconditioned reverse osmosis membrane having reduced defects. The treatment can take place at temperatures greater than 34° C. because the polyvinylpyrrolidone and polyvinylalcohol rejection enhancing agents used do not have cloud point limitations. | 04-05-2012 |
20120145201 | SPIN RINSE DRY APPARATUS AND METHOD OF PROCESSING A WAFER USING THE SAME - A spin-rinse-dry (SRD) apparatus includes a housing; a pedestal in the housing, comprising a rotatable wafer supporter for holding and spinning a semiconductor wafer; and at least a first liquid dispensing tube in adjacent to the pedestal. The first liquid dispensing tube includes a bended tubular part and an outlet nozzle that is situated beyond an edge of the semiconductor wafer. | 06-14-2012 |
20120160276 | PROCESS FOR TREATING A SEMICONDUCTOR WAFER - Mixtures containing concentrated sulfuric acid used for stripping photoresist from semiconductor wafer, such as SOM and SPM mixtures, are more quickly removed from a wafer surface using another liquid also containing high concentration of sulfuric acid, with the second liquid furthermore containing controlled small amounts of fluoride ion. The second liquid renders the wafer surface hydrophobic, which permits easy removal of the sulfuric acid therefrom by spinning and/or rinsing. | 06-28-2012 |
20120318303 | NON-BLEACHING PROCEDURE FOR THE REMOVAL OF TEA AND COFFEE STAINS - A novel approach to the removal of coffee and tea stains from dishes is disclosed. Tea, coffee and other stains caused by tannins are particularly difficult to remove and traditional techniques include harsh treatments that use bleach, or other environmentally undesirable chemicals such as phosphates, EDTA, NTA or other aminocarboxylates. Applicants have found that an acid rinse prior to alkaline cleaning of stained dishware such as ceramics porcelain and the like can remove up to one hundred percent of even aged coffee and tea stains. | 12-20-2012 |
20130000682 | ACID TREATMENT STRATEGIES USEFUL TO FABRICATE MICROELECTRONIC DEVICES AND PRECURSORS THEREOF - A method of treating one or more wafers is provided. The method comprises the steps of:
| 01-03-2013 |
20130037062 | METHODS AND APPARATUS FOR CLEANING DEPOSITION CHAMBER PARTS USING SELECTIVE SPRAY ETCH - In one aspect, a method of cleaning an electronic device manufacturing process chamber part is provided, including a) spraying the part with an acid; b) spraying the part with DI water; and c) treating the part with potassium hydroxide. Other aspects are provided. | 02-14-2013 |
20130056036 | INTEGRATED PROCESSING AND CRITICAL POINT DRYING SYSTEMS FOR SEMICONDUCTOR AND MEMS DEVICES - Processing and drying of a sample, such as a semiconductor or MEMS device, is achieved using a single pressure chamber. The pressure chamber holds the sample in a sealed interior volume throughout various process steps, such as, but not limited to, photoresist removal, sacrificial layer etching, flushing or rinsing, dehydration, and critical point drying. The pressure chamber is constructed of a chemically-resistant and pressure-resistant material to withstand the various chemicals and pressures that are encountered in the various process and drying steps. For example, the pressure chamber is constructed from a nickel-copper alloy. Automated release etching and critical point drying of a MEMS or semiconductor device is provided without removing the device from the sealed pressure chamber. | 03-07-2013 |
20130068262 | Method For The Treatment Of A Semiconductor Wafer - Semiconductor wafers are treated in a liquid container filled at least partly with a solution containing hydrogen fluoride, such that surface oxide dissolves, are transported out of the solution along a transport direction and dried, and are then treated with an ozone-containing gas to oxidize the surface of the semiconductor wafer, wherein part of the semiconductor wafer surface comes into contact with the ozone-containing gas while another part of the surface is still in contact with the solution, and wherein the solution and the ozone-containing gas are spatially separated such that they do not come into contact with one another. | 03-21-2013 |
20130146102 | CONCENTRATED WAREWASHING COMPOSITIONS AND METHODS - The invention generally relates to concentrated warewashing compositions and methods of using the same. In some aspects, the invention uses concentrated compositions in methods of warewashing where the concentrate is applied directly to the article to be cleaned, rather than dispensed into a sump and applied to the article as a ready-to-use composition. In additional aspects, the methods of using highly concentrated alkaline and/or acid compositions in an alternating pattern of alkaline-acid-alkaline or acid-alkaline-acid, or the like, provide substantially similar or superior cleaning efficacy while reducing the overall consumption of the alkaline and/or acid compositions. | 06-13-2013 |
20130239995 | DETERGENT COMPOSITION FOR REMOVING FISH SOIL - A detergent composition as described which can be utilized in a variety of applications for cleaning surfaces and objects, removing suspended soils, and rinsing easily. The detergent composition is particularly effective at removing soils caused by raw fish soil. | 09-19-2013 |
20130239996 | INTEGRATED PROCESSING AND CRITICAL POINT DRYING SYSTEMS FOR SEMICONDUCTOR AND MEMS DEVICES - Processing and drying of a sample, such as a semiconductor or MEMS device, is achieved using a single pressure chamber. The pressure chamber holds the sample in a sealed interior volume throughout various process steps, such as, but not limited to, photoresist removal, sacrificial layer etching, flushing or rinsing, dehydration, and critical point drying. The pressure chamber is constructed of a chemically-resistant and pressure-resistant material to withstand the various chemicals and pressures that are encountered in the various process and drying steps. For example, the pressure chamber is constructed from a nickel-copper alloy. Automated release etching and critical point drying of a MEMS or semiconductor device is provided without removing the device from the sealed pressure chamber. | 09-19-2013 |
20130340796 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - The present disclosure provides a substrate processing apparatus including: a substrate processing chamber configured to process a substrate on which a target layer to be removed is formed on the surface of an underlying layer; a substrate holding unit provided in the substrate processing chamber and configured to hold the substrate; a mixed liquid supplying unit configured to supply a mixed liquid of sulfuric acid and hydrogen peroxide to the substrate held by the substrate holding unit in a mixing ratio of the hydrogen peroxide and a temperature that does not damage the underlying layer while removing the target layer; and an OH-group supplying unit configured to supply a fluid containing OH-group to the substrate in an amount that does not damage the underlying layer when the mixed liquid and the OH-group are mixed on the substrate. | 12-26-2013 |
20140069466 | METHOD OF REDUCING SOIL REDEPOSITION ON A HARD SURFACE USING PHOSPHINOSUCCINIC ACID ADDUCTS - Methods employing detergent compositions effective for reducing soil redeposition and accumulation on hard surfaces are disclosed. The detergent compositions employ phosphinosuccinic acid adducts in combination with an alkalinity source and gluconic acid or salts thereof, copolymers of acrylic acid and maleic acids or salts thereof, sodium hypochlorite, sodium dichloroisocyanurate or combinations thereof. | 03-13-2014 |
20140238445 | TWO STEP METHOD OF CLEANING, SANITIZING, AND RINSING A SURFACE - Methods employing detergent compositions comprising phosphinosuccinic acid oligomers (PSO) in combination with a sanitizing rinse aid are disclosed. The methods beneficially clean, sanitize and rinse a surface in an efficient two-step process. The detergent compositions employ phosphinosuccinic acid adducts, namely mono-, bis- and oligomeric phosphinosuccinic acid (PSO) derivatives, in combination with an alkalinity source and optionally polymers and/or surfactants. The sanitizing and rinsing compositions employ peroxycarboxylic acid compositions in combination with a nonionic defoaming and wetting surfactant. | 08-28-2014 |
20140261567 | INHIBITING CORROSION OF ALUMINUM ON ALKALINE MEDIA BY PHOSPHINOSUCCINATE OLIGOMERS AND MIXTURES THEREOF - A warewashing detergent composition is provided for use for in cleaning of alkaline sensitive metals such as aluminum or aluminum containing alloys. The compositions include alternatives to sodium tripolyphosphate and/or other phosphorus containing raw materials, while retaining cleaning performance and corrosion prevention. According to the invention, a phosphinosuccinate oligomer of mixture thereof is used as a corrosion inhibitor and can be included for aluminum protection in a number of different detergent compositions. | 09-18-2014 |
20140332034 | PROCESS COMPRISING WATER VAPOR FOR HAZE ELIMINATION AND RESIDUE REMOVAL - A method of treating a substrate comprises removing material from a substrate using a treatment protocol to provide a treated substrate followed by a rinsing step. In the rinsing step at least one stream comprising a rinsing fluid is introduced and water vapor is caused to collide with and atomize the rinsing fluid. The atomized rinsing fluid is caused to rinsingly contact the treated substrate. | 11-13-2014 |
20160167966 | METHOD FOR CLEANING CARBON NANOTUBES AND CARBON NANOTUBE SUBSTRATE AND USES THEREFOR | 06-16-2016 |
20160172184 | METHOD FOR CLEANING A WAFER | 06-16-2016 |
20160186100 | CLEANING COMPOSITION FOR REMOVING OXIDE AND METHOD OF CLEANING USING THE CLEANING COMPOSITION - The present disclosure relates to a cleaning composition for removing an oxide including an acid selected from an organic acid, an inorganic acid, and a combination thereof; a salt selected from an organic salt, an inorganic salt, and a combination thereof; a surfactant; and water, and a method of cleaning using the cleaning composition. | 06-30-2016 |