| Entries |
| Document | Title | Date |
|---|
| 20080196743 | CLEANING METHOD AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE - A cleaning method includes: producing an oxidizing solution by electrolysis of sulfuric acid; and cleaning a workpiece with the oxidizing solution. The oxidizing solution is heated by heat of mixing to clean the workpiece. A method for manufacturing an electronic device includes: producing a workpiece; producing an oxidizing solution by electrolysis of sulfuric acid; and cleaning the workpiece with the oxidizing solution. The oxidizing solution is heated by heat of mixing to clean the workpiece. | 08-21-2008 |
| 20080202554 | PROCESS FOR SURFACE TREATMENT OF METALS - A process for treating metal to remove oxidation or contaminants or prepare the metal for processing without unduly damaging the metal. A formulation of sulfuric acid, water, and either ammonia or a sulfate salt of ammonia (or both) is used to treat the metal. The sulfuric acid is effective in removing impurities and contaminants, while the ammonia or ammonia salt reduces the otherwise damaging effect sulfuric acid has on metal. | 08-28-2008 |
| 20080223401 | Cleaning hardware kit for composite showerhead electrode assemblies for plasma processing apparatuses - Apparatus to clean silicon electrode assembly surfaces which controls or eliminates possible chemical attack of electrode assembly bonding materials, and eliminates direct handling contact with the parts to be cleaned during acid treatment, spray rinse, blow dry, bake and bagging. Aspects of the apparatus include a kit including an electrode carrier to hold an electrode assembly, a treatment stand to allow access to the electrode assembly, a spider plate to clamp the electrode assembly in the electrode carrier, a nitrogen purge plate to supply nitrogen gas to the backside of the electrode assembly during acid cleaning of the electrode, a water rinse plate to supply water to the electrode face, a blow dry plate to supply nitrogen to dry the electrode assembly and a bake stand to support the electrode assembly during a bake before placing the clean electrode assembly in a bag. | 09-18-2008 |
| 20080236617 | USE OF DILUTE HYDROCHLORIC ACID IN ADVANCED INTERCONNECT CONTACT CLEAN IN NICKEL SEMICONDUCTOR TECHNOLOGIES - A method for cleaning oxide from the interconnects of a semiconductor that are comprised of nickel (Ni) silicide or nickel-silicide alloys where nickel is the primary metallic component is disclosed. The cleaning comprises performing an SC1 cycle, exposing the wafer comprising a NiSi contact to an SC1 solution. This removes oxygen atoms from the silicon oxide of the nickel silicide. Next, a rinse cycle is performed on the wafer to remove the SC1 solution. Finally, an HCl cycle is performed. During this cycle, the wafer comprising an NiSi contact is introduced to an HCl solution, removing oxygen atoms from the nickel oxide of the NiSi. The method of the present invention provides for lower contact resistance of NiSi semiconductor devices, facilitating semiconductor devices that have the benefits of miniaturization allowed by the NiSi technology, and higher performance due to the reduced contact resistance. | 10-02-2008 |
| 20080236618 | Cleaning of bonded silicon electrodes - Methods of cleaning plasma processing chamber components include contacting surfaces of the components with a cleaning solution, while avoiding damage of other surfaces or areas of the components by the cleaning solution. An exemplary plasma processing chamber component to be cleaning is an elastomer bonded electrode assembly having a silicon member with a plasma-exposed silicon surface, a backing member, and an elastomer bonding material between the silicon surface and the backing member. | 10-02-2008 |
| 20080236619 | COBALT CAPPING SURFACE PREPARATION IN MICROELECTRONICS MANUFACTURE - Cleaning compositions and methods in connection with cobalt-based capping of interconnects in integrated circuit semiconductor devices. | 10-02-2008 |
| 20080264444 | Method for removing carbide-based coatings - The present invention is a method for processing a metal component comprising exposing a carbide-based coating to fluoride ions, thereby extracting a carbide material from the carbide-based coating to provide a residual coating on the metal component, and removing the residual coating from the metal component. | 10-30-2008 |
| 20080283090 | Process for treatment of substrates with water vapor or steam - A method of treating a substrate comprises, in one aspect, placing a substrate having material on a surface thereof in a treatment chamber; directing a stream of a liquid treatment composition to impinge the substrate surface; and directing a stream of water vapor to impinge the substrate surface and/or to impinge the liquid treatment composition. A preferred aspect of this invention is the removal of materials, and preferably photoresist, from a substrate, wherein the treatment composition is a liquid sulfuric acid composition comprising sulfuric acid and/or its desiccating species and precursors. In another aspect, a liquid sulfuric acid composition comprising sulfuric acid and/or its desiccating species and precursors are dispensed onto a portion of the substrate surface that is less than the entire surface of the substrate in an amount effective to treat the portion of the substrate surface, and the liquid sulfuric acid composition is exposed to water vapor in an amount effective to increase the temperature of the liquid sulfuric acid composition above the temperature of the liquid sulfuric acid composition prior to exposure to the water vapor. The substrate may be enveloped with a water vapor and/or a optionally nitrogen gas environment during the treatment steps. | 11-20-2008 |
| 20080295862 | METHOD OF AND APPARATUS FOR CLEANING SUBSTRATE - A substrate cleaning apparatus is capable of individually setting a threshold value for use in making a check of a resistivity during a rinsing process on a recipe setting screen in each process step. Thus, by setting each threshold value depending on the type of liquid chemical to be used immediately before the rinsing process, the substrate cleaning apparatus can use an optimum threshold value during the rinsing process in each process step to make a check of the resistivity. This allows the proper completion of the rinsing process in each process step. | 12-04-2008 |
| 20080295863 | METHOD AND DEVICE FOR PROCESSING OR TREATING SILICON MATERIAL - A method for processing or treating silicon material in carrying out a cleaning or purification process comprises the following steps: wetting bulk silicon material, facing a first direction with a first liquid process medium, automatic changing of an orientation of the bulk silicon material by turning bulk silicon material with a turning device and wetting the bulk silicon material in the altered orientation with the first liquid medium. After that, the bulk silicon material is cleaned in a corresponding cleaning device. | 12-04-2008 |
| 20080308122 | Process For Cleaning, Drying and Hydrophilizing A Semiconductor Wafer - Semiconductor wafers are cleaned, dried, and hydrophilized the following steps in the order stated:
| 12-18-2008 |
| 20090000641 | METHODS AND APPARATUS FOR CLEANING DEPOSITION CHAMBER PARTS USING SELECTIVE SPRAY ETCH - In one aspect, a method of cleaning an electronic device manufacturing process chamber part is provided, including a) spraying the part with an acid; b) spraying the part with DI water; and c) treating the part with potassium hydroxide. Other aspects are provided. | 01-01-2009 |
| 20090025751 | Method of removing contaminants from a coating surface comprising an oxide or fluoride of a group IIIB metal - Disclosed herein is a cleaning method useful in removing contaminants from a surface of a coating which comprises an oxide or fluoride of a Group III B metal. Typically the coating overlies an aluminum substrate which is present as part of a semiconductor processing apparatus. The coating typically comprises an oxide or a fluoride of Y, Sc, La, Ce, Eu, Dy, or the like, or yttrium-aluminum-garnet (YAG). The coating may further comprise about 20 volume % or less of Al | 01-29-2009 |
| 20090032057 | ACID INHIBITOR COMPOSITIONS FOR METAL CLEANING AND/OR PICKLING - An acid inhibitor concentrate is provided which contains water, at least one polyamino-aldehyde resin such as a quaternized polyethylenepolyamine-glyoxal resin, and at least one compound selected from the group consisting of acetylenic alcohols, ethoxylated fatty amines, ethoxylated fatty amine salts, and aldehyde-releasing compounds (such as hexamethylenetetramine). Such concentrates form useful metal cleaning and pickling solutions when combined with aqueous acid, wherein such solutions, when contacted with a metal surface, are effective in removing scale, smut and other deposits from the metal surface but exhibit a reduced tendency for the aqueous acid to attack or etch the metal itself. | 02-05-2009 |
| 20090056745 | WET CLEAN PROCESS FOR RECOVERY OF ANODIZED CHAMBER PARTS - A cleaning process for recovering an anodized aluminum part is particularly useful when the part has been exposed to a fluorine-containing plasma in etch reactor. The part is bathed in an agitated solution of a fluoride acid, such as ammonium fluoride, which converts aluminum fluoride to a soluble fluoride. The part is rinsed in water. The pores of the cleaned anodization may be resealed by a submerging the part in hot agitated deionized water. | 03-05-2009 |
| 20090056746 | Methods For Treating Surfaces, And Apparatuses For Treating Surfaces - Some embodiments include methods of treating surfaces with aerosol particles. The aerosol particles may be formed as liquid particles, and then passed through a chamber under conditions which change the elasticity of the particles prior to impacting a surface with the particles. The change in elasticity may be an increase in the elasticity, or a decrease in the elasticity. The change in elasticity may be accomplished by causing a phase change of one or more components of the aerosol particles such as, for example, by at least partially freezing the aerosol particles, or by forming entrained bubbles within the aerosol particles. Some embodiments include apparatuses that may be utilized during treatment of surfaces with aerosol particles. | 03-05-2009 |
| 20090065028 | Method and System for Cleaning an Artillery Gun Barrel - The invention relates to a method for cleaning an artillery gun barrel, which is cleaned of gun oil, greases, or combustion residues using a washing liquid and a brush element. The brush element is moved backwards and forwards in the barrel with the aid of the washing liquid. In addition, copper is cleaned out of the simultaneously in the same process. The invention also relates to a system for cleaning an artillery gun barrel. | 03-12-2009 |
| 20090071507 | PROCESS FOR CLEANING A SEMICONDUCTOR WAFER - Semiconductor wafers are cleaned by forming a first liquid film on a surface of the semiconductor wafer to be cleaned, the first liquid film containing hydrogen fluoride and ozone; replacing the first liquid film with a second aqueous liquid film which contains hydrogen fluoride and ozone, the concentration of hydrogen fluoride in the second liquid film being lower than in the first liquid film; and removing the second liquid film. | 03-19-2009 |
| 20090107522 | SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT APPARATUS - An inventive substrate treatment method is performed by a substrate treatment apparatus including a plate having an opposed surface to be kept in opposed spaced relation to one surface of a substrate for treating the substrate with a treatment liquid, and includes: a pre-supply liquid filling step of supplying a pre-supply liquid into a space defined between the one surface of the substrate and the plate through a spout which is provided in the opposed surface in opposed relation to the center of the substrate, and filling the space with the pre-supply liquid, the pre-supply liquid having a smaller contact angle with respect to the substrate and the plate than the treatment liquid; a treatment liquid replacing step of, after a liquid-filled state is established in the space filled with the pre-supply liquid, supplying the treatment liquid into the space to replace the pre-supply liquid present in the space with the treatment liquid while keeping the space in the liquid-filled state; and a treatment liquid contacting step of, after the replacement of the pre-supply liquid, filling the space with the treatment liquid to cause the treatment liquid to contact the one surface of the substrate. | 04-30-2009 |
| 20090114247 | Method of Treating Flow Conduits and Vessels with Foamed Composition - The annular surface between the tubing and casing of an oil or gas well as well as flow conduits and vessels may be contacted with a foamed treatment composition containing a gas, a foaming agent and a treatment agent. The treatment agent may be an inhibitor or removal agent for scales, corrosion, salts, paraffins or asphaltenes. The foam, upon destabilization, renders a thin film of concentrated treatment agent on the external surfaces of the tubing, inside the casing and in the perforations of the oil or gas well or on the flow conduits or vessels. | 05-07-2009 |
| 20090133716 | METHODS OF POST CHEMICAL MECHANICAL POLISHING AND WAFER CLEANING USING AMIDOXIME COMPOSITIONS - The invention relates to a method for the removal of residues and contaminants from metal or dielectric surfaces and to a method for chemical mechanical polishing of a copper or aluminum surface. The methods of the invention include using an aqueous amidoxime complex agent. Optionally, the pH of the solution can be adjusted with an acid or base. The method includes applying the above composition to the copper or aluminum surface and polishing the surface in the presence of the composition. | 05-28-2009 |
| 20090133717 | CERAMIC SPRAYED MEMBER-CLEANING METHOD, PROGRAM FOR IMPLEMENTING THE METHOD, STORAGE MEDIUM STORING THE PROGRAM, AND CERAMIC SPRAYED MEMBER - A ceramic sprayed member-cleaning method which is capable of reliably suppressing desorption and attachment of water. The surface of a ceramic sprayed member and water are chemically bonded to each other, whereby the water is stabilized. Water physically adsorbed on the surface of the ceramic sprayed member is desorbed. | 05-28-2009 |
| 20090139543 | REDUCING COPPER DEFECTS DURING A WET CHEMICAL CLEANING OF EXPOSED COPPER SURFACES IN A METALLIZATION LAYER OF A SEMICONDUCTOR DEVICE - By exposing a wet chemical cleaning solution, such as hydrofluoric acid, to a pressurized inert gas ambient prior to applying the solution to patterned dielectric materials of semiconductor devices, the incorporation of oxygen into the liquid during storage and application may be significantly reduced. For instance, by generating a substantially saturated state in the pressurized inert gas ambient, a substantially oversaturated state may be achieved during the application of the liquid in ambient air, thereby enhancing efficiency of the treatment, for instance, by reducing the amount of material removal of exposed copper surfaces after trench patterning, without requiring sophisticated modifications of process chambers. | 06-04-2009 |
| 20090159096 | ACID PICKLING SOLUTION AND METHOD FOR SURFACE TREATMENT UTILIZING THE SAME - An exemplary acid pickling solution for treating a surface of a magnesium alloy workpiece. The acid pickling solution consists of 5 g/l to 30 g/l of citric acid, 1.5 g/l to 6 g/l of surface active agent, wherein the surface active agent is a water-soluble and silicone free agent. A method for treating a surface of a magnesium alloy workpiece is also provided. | 06-25-2009 |
| 20090199866 | BEVERAGE MANUFACTURE, PROCESSING, PACKAGING AND DISPENSING USING ELECTROCHEMICALLY ACTIVATED WATER - A system using electrochemically-activated water (ECAW) for manufacturing, processing, packaging, and dispensing beverages including: (a) using ECAW to neutralize incompatible residues when transitioning from the production of one beverage to another; (b) using ECAW to rehabilitate and disinfect granular activated charcoal beds used in the feed water purification system; (c) producing a carbonated ECAW product and using the carbonated ECAW for system cleaning or disinfecting; (d) using ECAW solutions in the beverage facility clean-in-place system to achieve improved microbial control while greatly reducing water usage and reducing or eliminating the use of chemical detergents and disinfectants; (e) further reducing biofilm growth in the processing system, and purifying ingredient water without the use of chlorine, by adding an ECAW anolyte to the water ingredient feed stream; and/or (f) washing the beverage product bottles or other packages with one or more ECAW solutions prior to packaging. | 08-13-2009 |
| 20090217943 | In-line stripping apparatus and method therefor - A method for stripping paint hangers in a paint conveyor system. The system comprising a plurality of operation stages for operating on articles coupled to the paint hangers, and with the paint hangers supported from at least one conveyor line. The method comprising: Performing operations on articles at operation stages, while paint hangers are supported from the conveyor line, removing the articles from the paint hangers following completion of performing of operations on the articles, performing in-line stripping process on the hangers, and returning stripped paint hangers to an initial one of the operation stages following the stripping process. | 09-03-2009 |
| 20090293908 | REMOVAL OF METAL CONTAMINANT DEPOSITED ON QUARTZ MEMBER OF VERTICAL HEAT PROCESSING APPARATUS - A method is used for removing a metal contaminant deposited on a quartz member selected from the group consisting of a reaction tube, wafer boat, and heat-insulating cylinder of a vertical heat processing apparatus for a semiconductor process. The method includes obtaining the quartz member unattached to the vertical heat processing apparatus; then, performing diluted hydrofluoric acid cleaning of cleaning the quartz member by use of diluted hydrofluoric acid; then, performing first purified water cleaning of cleaning the quartz member by use of purified water; then, performing hydrochloric acid cleaning of cleaning the quartz member by use of hydrochloric acid; and then, performing second purified water cleaning of cleaning the quartz member by use of purified water. | 12-03-2009 |
| 20090320877 | PROCESS AND COMPOSITION FOR REMOVING A SCALE DEPOSIT - One exemplary embodiment can be a process for removing one or more scale deposits formed on a surface. The process can include contacting the surface with a composition for a period of time sufficient to remove the one or more scale deposits. Generally, the composition includes an effective amount of an organic acid and/or a salt thereof, and an effective amount of an oxidizing agent. | 12-31-2009 |
| 20100012149 | STRIPPING AGENT FOR SECONDARY BATTERY ELECTRODE MATERIAL AND METHOD OF TREATING SECONDARY BATTERY USING THE STRIPPING AGENT - An electrode of a secondary battery is treated to remove an electrode material adhering to the current collector of the electrode. The electrode is treated by exposing to a stripping agent, which is constituted as an aqueous solution containing at least one of an organic sulfonic acid and derivative thereof, and the electrode exposure to each other to strip the electrode material from the current collector constituting the electrode. | 01-21-2010 |
| 20100043824 | MICROELECTRONIC SUBSTRATE CLEANING SYSTEMS WITH POLYELECTROLYTE AND ASSOCIATED METHODS - Several embodiments of cleaning systems using polyelectrolyte and various associated methods for cleaning microelectronic substrates are disclosed herein. One embodiment is directed to a system that has a substrate support for holding the microelectronic substrate, a dispenser positioned above the substrate support and facing a surface of the microelectronic substrate, a reservoir in fluid communication with the dispenser via a conduit, and a washing solution contained in the reservoir. The washing solution includes a polyelectrolyte. | 02-25-2010 |
| 20100078040 | Use of an Aqueous Neutral Cleaning Solution and Method for Removing Rouging from Stainless Steel Surfaces - The invention relates to a method for removing films and deposits from stainless surfaces, especially from stainless metallic surfaces such as they are used in process stations and production units in the pharmaceutical, food and biotechnological industries, and to an aqueous cleaning solution comprising a reducing agent, in particular dithionite and/or disulfite, and at least two different complexing agents, wherein one of these complexing agents is a compound comprising diacetic acid groups or a salt thereof, for removing rouging on surfaces of stainless steels that come into contact with media selected from the group of chromium/nickel and chromium/nickel/molybdenum steels in the neutral pH range. | 04-01-2010 |
| 20100095981 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - Disclosed are a substrate processing apparatus and a substrate processing method to efficiently remove a resist residue of a substrate surface by using sulfuric acid without hydrogen peroxide solution that is not stable in a high temperature, or by using sulfuric acid together with hydrogen peroxide solution that is not stable in a high temperature. The substrate processing apparatus to process a substrate by using a first processing liquid including sulfuric acid and a second processing liquid including water includes a liquid-film forming device to form a liquid film of the first processing liquid maintained at a temperature higher than room temperature on at least one surface of the substrate, and a vapor/mist supply device to supply vapor or mist of the second processing liquid on the surface of the substrate on which the liquid film of the first processing liquid is formed. Further, the substrate processing apparatus to process a substrate within a processing chamber by using a first processing liquid including sulfuric acid and a second processing liquid including hydrogen peroxide solution includes a processing tank to store the first processing liquid at a temperature higher than room temperature, a substrate elevating mechanism to move the substrate up and down between the processing tank and the processing chamber, and a mist supply device to supply mist of the second processing liquid to a portion of the substrate in the vicinity of a liquid surface of the first processing liquid stored in the processing tank when the substrate is lifted from or immersed into the processing tank by the substrate elevating mechanism. | 04-22-2010 |
| 20100116288 | METHOD FOR DECONTAMINATING SURFACES OF NUCLEAR PLANTS WHICH HAVE BEEN CONTAMINATED WITH ALPHA EMITTERS - A method for decontaminating nuclear plant surfaces, which have been contaminated with alpha emitters, is carried out subsequently to a decontamination process which is aimed at the removal of oxide layers. The surfaces are treated with an aqueous solution which contains a cationic or zwitterionic surfactant and oxalic acid. At least a part of the solution, after having acted on a surface, is conducted across an ion exchanger. | 05-13-2010 |
| 20100122712 | Ferric Pickling of Silicon Steel - The pickling process designed for pickling electrical steel strip in a continuous fashion comprising immersing the strip in at least one pickling tub. The pickling tub contains a mixture of HCl, Fe | 05-20-2010 |
| 20100126524 | SYSTEMS, METHODS AND SOLUTIONS FOR CLEANING CRYSTAL GROWTH VESSELS - The disclosure provides mixed acid solutions for cleaning a vessel, such as a vessel used for growing a GaAs crystal, comprising nitric acid, hydrofluoric acid and water. Further, the disclosure also provides exemplary methods for cleaning a vessel for growing a GaAs crystal, by: a) immersing the vessel in a mixed acid solution; b) immersing the vessel in an ammonia solution; c) cleansing the vessel with a surfactant solution under supersonic vibration; and d) cleansing the vessel with deionized water under supersonic vibration. | 05-27-2010 |
| 20100139692 | IMMERSIVE OXIDATION AND ETCHING PROCESS FOR CLEANING SILICON ELECTRODES - A process for cleaning a silicon electrode is provided where the silicon electrode is soaked in an agitated aqueous detergent solution and rinsed with water following removal from the aqueous detergent solution. The rinsed silicon electrode is then soaked in an agitated isopropyl alcohol (IPA) solution and rinsed. The silicon electrode is then subjected to an ultrasonic cleaning operation in water following removal from the IPA solution. Contaminants are then removed from the silicon electrode by soaking the silicon electrode in an agitated mixed acid solution comprising hydrofluoric acid, nitric acid, acetic acid, and water. The silicon electrode is subjected to an additional ultrasonic cleaning operation following removal from the mixed acid solution and is subsequently rinsed and dried. In other embodiments of the present disclosure, it is contemplated that the silicon electrode can be soaked in either the agitated aqueous detergent solution, the agitated isopropyl alcohol (IPA) solution, or both. Additional embodiments are contemplated, disclosed, and claimed. | 06-10-2010 |
| 20100170532 | METHOD OF CLEANING FIREARMS AND ORDNANCE - A method of removing metallic copper from a steel surface defining a bore or cylinder of a gun is provided. The method involves contacting the surface with a composition comprising a polyphosphonic acid, a hydroxyl-substituted primary amine, and water. | 07-08-2010 |
| 20100175714 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A substrate processing apparatus and a substrate processing method, with which a resist can be removed satisfactorily from the substrate and a processing solution used for removing the resist can be recycled, are provided. The substrate processing apparatus includes: a substrate holding means holding a substrate; a peroxosulfuric acid generating means generating a peroxosulfuric acid using sulfuric acid; a mixing means mixing the peroxosulfuric acid generated by the peroxosulfuric acid generating means and sulfuric acid of higher temperature and higher concentration than the sulfuric acid used in the peroxosulfuric acid generating means; and a discharging means discharging, toward the substrate held by the substrate holding means, the mixed solution of the peroxosulfuric acid and the sulfuric acid mixed by the mixing means as a processing solution for removing a resist from the substrate. | 07-15-2010 |
| 20100175715 | Combinatorial Approach to the Development of Cleaning Formulations For Wet Removal of High Dose Implant Photoresist - Embodiments of the current invention describe a cleaning solution for the removal of high dose implanted photoresist, along with methods of applying the cleaning solution to remove the high dose implanted photoresist and combinatorially developing the cleaning solution. | 07-15-2010 |
| 20100180914 | CONDUCTOR CLEANING SYSTEM AND METHOD - A conductor cleaning system for cleaning aluminum strands of all aluminum and steel reinforced conductors, such as ACSS, ACSR, ACAR, and AAA. The conductor cleaning system having a container adapted to receive a portion of a conductor to be cleaned, a housing adapted to receive and support the container, and a cleaning solution contained in the container for cleaning the portion of the conductor. The cleaning solution being adapted to clean the conductor without reacting with or damaging the conductor. | 07-22-2010 |
| 20100218788 | NON DESTRUCTIVE SELECTIVE DEPOSITION REMOVAL OF NON-METALLIC DEPOSITS FROM ALUMINUM CONTAINING SUBSTRATES - Non-metallic deposits are selectively removed from aluminum containing substrates such as aluminum faceplates using a selective deposition removal (SDR) solution. The SDR solution does not substantially etch the faceplate holes, thereby preserving the hole diameter integrity and increasing the number of times the faceplate may be cleaned or refurbished while remaining within processing hole diameter tolerances. In an embodiment, the SDR solution comprises, in wt % of the solution, 15.5%+/−2% HF or buffered HF acid, 3.8%+/−0.5% NH | 09-02-2010 |
| 20100269854 | Apparatus and Method for the Continuous Pickling of Steel Strip - The pickling of a continuously running steel strip and, more particularly, a pickling method, includes centralized control of all of the pickling operations. The invention further includes an apparatus for implementing the pickling process. | 10-28-2010 |
| 20100275952 | SELECTIVE ETCHING OF REACTOR SURFACES - Compositions, methods, and systems permit selectively etching metal oxide from reactor metal parts (e.g., titanium and/or titanium alloys). The etching composition comprises an alkali metal hydroxide and gallic acid. The method is useful for cleaning reaction chambers used in the deposition of metal oxide films such as aluminum oxide. | 11-04-2010 |
| 20100294307 | ACIDIC CLEANER FOR METAL SURFACES - The invention relates to a acidic composition for cleaning surfaces of metal or alloys which are susceptible to corrosion comprising
| 11-25-2010 |
| 20100313908 | Use of Alkanesulfonic Acid as Agent for Cleaning Cement, Mortar and Concrete - The present invention relates to the use of at least one alkanesulfonic acid of formula R—SO | 12-16-2010 |
| 20100326466 | METHOD FOR REGENERATING GAS TURBINE BLADE AND GAS TURBINE BLADE REGENERATING APPARATUS - An object is to reduce changes in mechanical properties of a gas turbine blade base material during repair or regeneration of a gas turbine blade. For this purpose, a gas turbine blade after being operated is washed by being immersed into a strong alkaline washing solution, and the gas turbine blade after being washed with the strong alkaline washing solution is washed with water. The gas turbine blade after being washed with water is then washed by being immersed into a weak acid washing solution, and the gas turbine blade after being washed with the weak acid washing solution is subjected to heat treatment. The gas turbine blade after the heat treatment is then immersed into a strong acid washing solution, whereby the coating formed on the surface of the gas turbine blade is removed. | 12-30-2010 |
| 20110005549 | METHOD FOR THE THERMOCHEMICAL CLEANING AND/OR STRIPPING OF TURBINE COMPONENTS - The invention relates to a process for the thermochemical cleaning and/or stripping of turbine components, in particular engine components, with the steps: Production of a first gaseous mixture containing HF and H | 01-13-2011 |
| 20110023907 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device includes the step of conducting a cleaning process for a wafer formed with copper wiring lines to remove contaminations produced on a back surface of the wafer. The cleaning process is conducted by injecting onto the back surface of the wafer an etchant for removing contaminations and simultaneously injecting onto a front surface of the wafer a reductant containing hydrogen. | 02-03-2011 |
| 20110056516 | PROCESS FOR SURFACE TREATMENT OF METALS - An environmentally acceptable and comparatively safe acid cleaning solution containing sulfuric acid, water and amine containing inhibitors that adequately remove oxidation or contaminants from surfaces without excessively damaging equipment. The sulfuric acid is effective in removing impurities and contaminants, while the amine moieties or amine salts reduce the otherwise damaging effect of sulfuric acid on equipment and on human skin and tissue. | 03-10-2011 |
| 20110079244 | PICKLING METHOD AND PICKLING SYSTEM OF STEEL SHEET - The present invention provides a pickling method of steel sheet and pickling system of steel sheet able to efficiently remove oxide scale from steel sheet. That is, it provides a continuous pickling method of steel sheet having a step A of pickling the steel sheet in a pickling tank, a step B of blowing gas toward at least part of the surfaces of the steel sheet in the air after the step A, and a step C of pickling the steel sheet in a pickling tank after the step B, wherein at step B, the steel sheet is temporarily taken out from the pickling solution and gas is blown to at least part of the surfaces of the steel sheet in the air so as to evaporate the acid solution deposited on the surface of the steel sheet and locally increase the acid concentration to thereby efficiently remove even the stubborn Si oxides included in the oxide scale. | 04-07-2011 |
| 20110088720 | METHODS FOR CLEANING SUBSTRATES - A method for removing sand particles from a substrate is described. The method includes the step of treating the substrate with an acid solution comprising H | 04-21-2011 |
| 20110094536 | Troika Acid Semiconductor Cleaning Compositions and Methods of Use - Semiconductor processing compositions for use with silicon wafers having an insulating layers, and metallization layers on the wafers comprising water and one or more Troika acids which is also referred to as a, α-disubstituted trifunctional oximes or α-(Hydroxyimino) Phosphonoacetic acids, their salts, and their derivatives. | 04-28-2011 |
| 20110203611 | MASK CLEANING METHOD, MASK CLEANING APPARATUS, AND PELLICLE - Embodiments disclose a method for cleaning a mask having a mask film that is of a surface to which a foreign substance containing silicon oxide adheres. In the method, the mask is retained in a cleaning gas containing diluted hydrofluoric acid vapor at a temperature at which an etching rate to the foreign substance becomes higher than an etching rate to the mask film. Further, in the method, the cleaning gas is supplied to the surface of the mask to etch the foreign substance. | 08-25-2011 |
| 20110214689 | CLEANING SOLVENT AND CLEANING METHOD FOR METALLIC COMPOUND - Disclosed are cleaning solvents and cleaning methods for metallic compounds deposited on the equipment that supplies organometallic compounds to the manufacturing tool in the photovoltaic industry or the semiconductor industry. The cleaning solvents and the cleaning methods disclosed not only selectively remove the metallic compound without corroding the equipment, but also improve the ordinary cleaning process. Moreover, the cleaning solvents and the cleaning methods disclosed improve maintenance costs for the supply system because the equipment may be cleaned without being detached from the supply system. | 09-08-2011 |
| 20110232679 | USE OF THIOGLYCOL ETHOXYLATE AS A CORROSION INHIBITOR - The present invention relates to an acidic, aqueous composition which comprises a thiodiglycol alkoxylate for treating metallic surfaces. The invention furthermore relates to the use of one or more compound(s) of the general formula (I) as a corrosion inhibitor. | 09-29-2011 |
| 20110247650 | COMPOSITION AND METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATES - The compositions and methods for the removal of residues and contaminants from metal or dielectric surfaces comprises at least one alkyl diphosphonic acid, at least one second acidic substance at a mole ratio of about 1:1 to about 10:1 in water, and pH is adjusted to from about 6 to about 10 with a basic compound, and optionally a surfactant. Particularly, a composition and method of cleaning residues after chemical mechanical polishing of a copper or aluminum surface of the semiconductor substrates. One of the embodiment is the method of using the compositions in dilution, wherein the solution may be diluted with DI water at dilution ratios, for example, of up to 1:10, up to 1:50, up to 1:100, up to 1:150, up to 1:250, and up to about 1:500 or any ratios therein. | 10-13-2011 |
| 20110253169 | SOLUTION FOR REMOVING TITANIUM-CONTAINING COATINGS AND METHOD FOR SAME - A solution and method for removing titanium-containing coatings from the surface of substrates using the solution are provided. The solution includes 90-1000 g/L organic or inorganic acid; 70-500 g/L accelerant, the accelerant being acid or salt which contains fluorinion; 15-200 g/L secondary accelerator, the secondary accelerator being generic amino alcohols which can combine with titanium ion; 2-8 g/L inhibiter, the inhibiter being selected from one or more of the group consisting of thiourea, thiourea derivatives, and carbamide. The method for removing titanium-containing coating on the substrate mainly includes contacting the substrate with the titanium-containing coating with the solution. | 10-20-2011 |
| 20110259363 | PROCESS FOR REMOVING A COATING FROM SURFACES OF COMPONENTS USING ONLY HYDROCHLORIC ACID - The removal of a coating from components after they have been used is often achieved using various acid baths and salt melts. A coating removal process that includes only using hydrochloric acid is provided. The duration of the process in which the coating is treated with the hydrochloric acids has a duration of between 2 and 2.5 hours. The process includes treated the coating with the hydrochloric acid at least twice. | 10-27-2011 |
| 20110303238 | PROCESS FOR DECONTAMINATING RADIOACTIVELY CONTAMINATED SURFACES - A process is provided for chemically decontaminating the surface of a metallic component. In a first treatment step, an oxide layer formed on the component by corrosion of the material of the component is detached from the surface of the component with a first aqueous treatment solution containing an organic decontamination acid. In a subsequent second treatment step, the surface which is at least partially freed of the oxide layer is treated with an aqueous solution containing an active component for removing particles which adhere to the surface. The active component is formed of at least one anionic surfactant from the group including sulphonic acids, phosphonic acids, carboxylic acids and salts of those acids. | 12-15-2011 |
| 20120000485 | CLEANING AGENT FOR SUBSTRATE AND CLEANING METHOD - The present invention provides a cleaning agent for a substrate and a cleaning method thereof, which can effectively remove fine particles (particles) present on a surface of substrate or impurities derived from various kinds of metals (metallic impurities), without causing roughness surface of a substrate, in particular, a semiconductor substrate, and without causing corrosion or oxidation of metal wirings, in particular, copper wirings, provided on a surface of substrate, and can further remove at the same time a carbon defect present on a surface of substrate, without removing a metal corrosion inhibitor—Cu film, in particular, a Cu-BTA film. | 01-05-2012 |
| 20120080053 | METHOD FOR CLEANING OF SEMICONDUCTOR SUBSTRATE AND ACIDIC SOLUTION - Disclosed is a cleaning method which can remove, particularly, all of an organic contaminant, a particle contaminant, and a metal contaminant adhered to a semiconductor substrate at a high cleaning level, and which can realize the reduction in environmental load caused by the cleaning. The method of cleaning the semiconductor substrate includes a first cleaning process of cleaning the semiconductor substrate with a cleaning composition including a transition-metal-containing water-soluble salt (A), a chelating agent (B1), and a peroxide (C), a ratio of the chelating agent (B1) to the transition-metal-containing water-soluble salt (A) being 0.5 molar equivalent or more; and a second cleaning process of cleaning the semiconductor substrate, which is cleaned through the first cleaning process, with an acidic solution containing a chelating agent (B2). | 04-05-2012 |
| 20120097184 | METHOD FOR RECYCLING WAFER - A method for recycling a wafer is provided. The method removes residues remaining on the wafer separated from a semiconductor layer, using HCl and Cl | 04-26-2012 |
| 20120138086 | METHOD FOR DECONTAMINATING SURFACES - A method chemically decontaminates a surface of a metal component of a primary circuit of a pressurized-water reactor, the surface contains an oxide layer. In a first stage, an oxidation step, a reduction step, and a first decontamination step are performed. The component is treated in the oxidation step with an aqueous solution containing an oxidizing agent, which converts trivalent chrome present in the oxide layer into hexavalent chrome. The component is treated in the reduction step with an aqueous solution containing a reducing agent for reducing excess oxidation agent from the oxidation step. The component is treated in the first decontamination step with an aqueous solution containing a decontamination acid that forms no antisoluble deposits with metal ions in the solution. The solution is fed through an ion exchanger for removing metal ions. In a second stage, the component is treated with an aqueous solution containing an oxalic acid. | 06-07-2012 |
| 20120145187 | METHOD FOR TREATMENT OF IRON-BASED METAL SURFACE EXPOSED TO SUPERHEATED STEAM - The present invention provides a surface treatment method for suppressing the formation and growth of superheated steam oxide scale on an iron-based metal surface exposed to superheated steam, comprising treating said iron-based metal surface with a surface-treatment agent which comprises a polyoxy saturated aliphatic mono- or di-carboxylic acid or a salt thereof and an amine compound represented by the following formula (I): | 06-14-2012 |
| 20120160266 | PROCESS FOR INHIBITING OXIDE FORMATION ON COPPER SURFACES - This invention provides processes for inhibiting the formation of copper oxides on substantially oxide-free copper surfaces by contacting a substantially oxide-free copper surface with a bifunctional ligand that contains both a metal-coordinating group and a tertiary amine group in an aqueous solution of pH about 2 to about 5.5. A thin layer of the bifunctional ligand formed by coordination of the dialkylaminoacetonitrile to the copper surface can be removed by heating under vacuum to regenerate a substantially oxide-free copper surface. | 06-28-2012 |
| 20120211025 | PROCESS FOR CLEANING WAFERS - A process for cleaning a wafer having an uneven pattern at its surface. The process includes at least the steps of: cleaning the wafer with a cleaning liquid; substituting the cleaning liquid retained in recessed portions of the wafer with a water-repellent liquid chemical after cleaning; and drying the wafer, wherein the cleaning liquid contains 80 mass % or greater of a solvent having a boiling point of 55 to 200° C., and wherein the water-repellent liquid chemical supplied in the substitution step has a temperature of not lower than 40° C. and lower than a boiling point of the water-repellent liquid chemical thereby imparting water repellency at least to surfaces of the recessed portions. | 08-23-2012 |
| 20120222702 | Target Bodies and Uses Thereof in the Production of Radioisotope Materials - A system and method are provided for reclaiming an enriched radioisotope starting material from a target body. The system and method enable reclaiming the starting material in a relatively short time (e.g., several hours) after the target body's bombardment with energetic particles, greatly simplifying the target body's chemical processing, as well as reducing the cost of such processing (e.g., reducing the need for costly long-term storage). Specifically, a chemical protective layer is disposed between a radioisotope starting material and a base material of the target body. After the target body is irradiated with a suitable source (e.g., particle accelerator), then the irradiated radioisotope starting material can be removed without removing the base material due to the protection provided by the chemical protective layer. The system and method also enable the operator to obtain three different radioisotopes in a single bombardment of the target body, further reducing cost of radioisotope production. | 09-06-2012 |
| 20120247505 | ETCH SYSTEM AND METHOD FOR SINGLE SUBSTRATE PROCESSING - Provided is a method and system for increasing etch rate and etch selectivity of a masking layer on a substrate in an etch treatment system, the etch treatment system configured for single substrate processing. The method comprises obtaining a supply of steam water vapor mixture at elevated pressure, obtaining a supply of treatment liquid for selectively etching the masking layer over the silicon or silicon oxide at a set etch selectivity ratio, placing the substrate into the etch processing chamber, combining the treatment liquid and the steam water vapor mixture, and injecting the combined treatment liquid and the steam water vapor mixture into the etch processing chamber, wherein the flow of the combined treatment liquid and the steam water vapor mixture is controlled to maintain a set etch rate and a set etch selectivity ratio of the masking layer to silicon or silicon oxide. | 10-04-2012 |
| 20120272998 | QUALITY MULTI-SPECTRAL ZINC SULFIDE - Low scatter water clear zinc sulfide with reduced metal contamination is prepared by cleaning an inert foil with an acid cleaning method and also cleaning zinc sulfide to reduce metal contamination. The zinc sulfide is wrapped in the inert foil and then treated by a HIP process to provide a water-clear zinc sulfide. The low scatter water-clear zinc sulfide may be used in articles such as windows and domes. | 11-01-2012 |
| 20120291800 | ELECTROLYZED WATER SYSTEM - Corrosion-inhibited hypochlorite compositions and methods of use are disclosed. Corrosion inhibitors including sugar acids and calcium compounds, polyacrylate and calcium compounds, and/or zinc and calcium compounds are used with hypochlorite sources to enhance the longevity and performance of electrochemical cells as well as reducing corrosion of metal in contact with the generated hypochlorite sources. The methods for generation employ a variety of electrochemical cells, beneficially including use of portable electrochemical cell system for production of corrosion-inhibited hypochlorite cleaning solutions. | 11-22-2012 |
| 20130008463 | MANUFACTURING METHOD OF A GLASS SUBSTRATE FOR A MAGNETIC DISK - An object of the invention is to remove effectively metallic contaminants adhering to the glass substrate surfaces without increasing roughness of the glass substrate surfaces in the glass substrate for a magnetic disk. In a manufacturing method of a glass substrate for a magnetic disk, a cleaning step comprising a treatment of contacting the glass substrate with a cleaning liquid containing peroxodisulfate and having a pH of not less than 2 and not more than 4 is appended. In addition, an example of the cleaning liquid can be prepared by adding sodium peroxodisulfate to an acidic solution. | 01-10-2013 |
| 20130014780 | Methods of Removing a Protective LayerAANM HOLTERMANN; Dennis L.AACI ConroeAAST TXAACO USAAGP HOLTERMANN; Dennis L. Conroe TX USAANM CHEUNG; Tin-Tack PeterAACI KingwoodAAST TXAACO USAAGP CHEUNG; Tin-Tack Peter Kingwood TX USAANM BLESSING; Christopher D.AACI Jubail Industrial CityAACO SAAAGP BLESSING; Christopher D. Jubail Industrial City SAAANM HUFF; Lawrence E.AACI KingwoodAAST TXAACO USAAGP HUFF; Lawrence E. Kingwood TX USAANM BERGMEISTER, III; JosephAACI KingwoodAAST TXAACO USAAGP BERGMEISTER, III; Joseph Kingwood TX USAANM HISE; Robert L.AACI HumbleAAST TXAACO USAAGP HISE; Robert L. Humble TX USAANM SCANLON; Geoffrey E.AACI HumbleAAST TXAACO USAAGP SCANLON; Geoffrey E. Humble TX USAANM Dockter; David W.AACI KingwoodAAST TXAACO USAAGP Dockter; David W. Kingwood TX US - A method of removing a metal protective layer from a surface of a reactor component comprising treating the metal protective layer with one or more chemical removal agents to remove at least a portion of the metal protective layer from the reactor component. A method of removing a metal protective layer from a surface of a reactor component comprising treating the metal protective layer to remove the metal protective layer from the reactor component, and determining a thickness of the reactor component following treatment. | 01-17-2013 |
| 20130025625 | PROCESS FOR CLEANING POLYCRYSTALLINE SILICON CHUNKS - Disclosed is a process for cleaning polycrystalline silicon chunks in an acidic cleaning bath, wherein: (a) the cleaning includes several cleaning cycles, (b) a particular amount of acid is consumed in each cycle, (c) a computer-controlled dosage system integrator adds up those amounts of acid consumed in each cycle to give a current total consumption of acid in the bath, and (d) on attainment of a total consumption of acid in the bath corresponding to an optimal dosage of the dosage system, the dosage system supplies this optimal dosage of unconsumed acid withdrawn from a reservoir vessel to the bath. Another process for cleaning polycrystalline silicon chunks in an acidic cleaning bath includes an acid circuit in which acid is circulated, wherein the ratio of amount of acid circulated in liters to the mass of polysilicon chunks present in the bath in kg is greater than 10. | 01-31-2013 |
| 20130068248 | SEMICONDUCTOR DEVICE CLEANING METHOD - The present disclosure provides a method including providing a chamber having a first inlet and a second inlet. A solution of a de-ionized (DI) water and an acid (e.g., a dilute acid) is provided to the chamber via the first inlet. A carrier gas (e.g., N | 03-21-2013 |
| 20130068249 | Method of Treating Rolled Steel Article - A process is disclosed in which hot rolled or cold rolled steel articles, such as tube, pipe, plate and sheet are cleaned of mill scale, surface rust and oils. The cleaning compositions compromise a solution mixture of diluted hydrochloric acid, a non-anionic surfactant, a non-ionic, non denaturing detergent, sodium carbonate, a water conditioner and water and a drying compound of an aqueous alcohol solution. The solutions are used independently within the 5 step process that cleans, rinses and removes all moisture from the steel to provide a surface that optimizes subsequent manufacturing a fabrication process including welding, laser cutting and the coating process. | 03-21-2013 |
| 20130074870 | TREATMENT PROCESS FOR AN ISOMERIZATION UNIT - One exemplary embodiment can be a process for treating an interior of equipment for an isomerization unit. Generally, the isomerization unit includes at least one of a drying zone, an isomerization reaction zone, and a stabilizer zone, for receiving a feed stream. Usually, the feed stream includes one or more C4-C8 hydrocarbons. The process can include combining an anhydrous hydrogen stream and anhydrous organic chloride stream to form a hydrogen chloride feedstock, and passing the hydrogen chloride feedstock to a reaction zone containing a catalyst including at least one of nickel, palladium, and platinum on an alumina support to form a hydrogen chloride stream, and passing the hydrogen chloride stream upstream of the isomerization reaction zone. | 03-28-2013 |
| 20130074871 | STAINLESS STEEL PICKLING IN AN OXIDIZING, ELECTROLYTIC ACID BATH - A pickling process designed for pickling a metal strip such as a stainless steel strip reduces the amount of HF and/or HNO | 03-28-2013 |
| 20130098393 | Method for Cleaning Platinum Residues on a Semiconductor Substrate - A method for cleaning platinum residues from a surface of a substrate is provided. The method initiates with exposing the surface to a first solution containing a mixture of nitric acid and hydrochloric acid. Then, the surface is exposed to a second solution containing hydrochloric acid. | 04-25-2013 |
| 20130125923 | METHOD FOR CLEANING PLATINUM RESIDUES ON A SEMICONDUCTOR SUBSTRATE - A method for cleaning platinum residues from a surface of a substrate is provided. The method initiates with exposing the surface to a first solution containing a mixture of nitric acid and hydrochloric acid. Then, the surface is exposed to a second solution containing hydrochloric acid. | 05-23-2013 |
| 20130174868 | METHOD FOR PURIFYING ALKALINE TREATMENT FLUID FOR SEMICONDUCTOR SUBSTRATE AND A PURIFICATION APPARATUS - Provided are a purification method and purification apparatus for an alkaline treatment liquid for a semiconductor substrate, which use adsorption purification means that can purify various alkaline treatment liquids to be used for treating semiconductor substrates for various purposes so as to have an ultrahigh purity, in particular, an Fe concentration in a ppq region, and that is excellent in chemical resistance and mechanical strength. The adsorption purification means is purification means for an alkaline treatment liquid for treating a semiconductor substrate for various purposes at the time of producing, for example, a semiconductor substrate or a semiconductor device. In the purification method and purification apparatus for an alkaline treatment liquid for a semiconductor substrate, an alkaline treatment liquid is brought into contact with silicon carbide crystal surfaces in the absorption purification means, for example, an alkaline treatment liquid is allowed to flow through a gap between adsorbing plate laminates ( | 07-11-2013 |
| 20130220366 | METHOD FOR SURFACE DECONTAMINATION - A method for chemical decontamination of an oxide-coated surface of a metal structural part or of a system in a nuclear power plant with several cleaning cycles, involves oxidation steps, in which the oxide layer is treated with an aqueous solution containing an oxidation agent, and a subsequent decontamination step, in which the oxide layer is treated with an aqueous solution of an acid. At least one oxidation step is carried out in an acid solution and at least one oxidation step in an alkaline solution. | 08-29-2013 |
| 20130233343 | SEQUENTIAL STAGE MIXING FOR SINGLE SUBSTRATE STRIP PROCESSING - Provided is a method for a resist removal system comprising a processing chamber and treatment liquid delivery system for single substrate processing. A primary stripping chemical is flowed in the treatment liquid delivery system at a primary temperature and flow rate; a secondary stripping chemical is injected at a first mixing point at a secondary temperature and flow rate. A tertiary stripping chemical is injected at a second mixing point at a tertiary temperature and a tertiary flow rate. The treatment liquid is dispensed onto a portion of the surface of the substrate wherein one or more of the primary temperature, secondary temperature, tertiary temperature, the primary flow rate, the secondary flow rate, and the tertiary flow rate are adjusted to meet a target strip rate and selectivity of strip over etch of silicon nitride and silicon oxide. | 09-12-2013 |
| 20130233344 | METHOD FOR CLEANING SEMICONDUCTOR WAFER - The present invention is a method for cleaning a semiconductor wafer comprising the steps of cleaning the semiconductor wafer with an SC1 cleaning solution, cleaning the semiconductor wafer cleaned by the SC1 cleaning solution with hydrofluoric acid, and cleaning the semiconductor wafer cleaned by the hydrofluoric acid with ozonated water having an ozone concentration of 3 ppm or more, wherein an etching removal of the semiconductor wafer with the SC1 cleaning solution is made 0.1 to 2.0 nm, whereby a method for cleaning a semiconductor wafer in which worsening of the surface roughness of the wafer due to cleaning can be reduced and cleaning of the wafer can be carried out effectively can be provided. | 09-12-2013 |
| 20130255718 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A substrate processing method includes a rinsing step of supplying water of a first temperature to a surface of a silicon substrate to apply a rinsing process using the water to the silicon substrate surface, a second temperature water supplying (coating) step of supplying water of a second temperature lower than the first temperature to the silicon substrate surface after the rinsing step, and a drying step of rotating the silicon substrate after the second temperature water supplying step to spin off the water on the silicon substrate surface to a periphery of the silicon substrate and thereby dry the silicon substrate. | 10-03-2013 |
| 20130276822 | Hyperbaric methods and systems for rinsing and drying granular materials - Polysilicon granules can be cleaned, rinsed and dried by hyperbaric superheated liquid and superheated steam. The superheated liquid can be used to rinse and heating the polysilicon granules. A slow drain can be open to remove the superheated liquid. A fast drain then can be open, preferably to atmosphere, to allow steam to vent through bottom. The fast drain can function as a drying process, vaporizing water droplets down the drain with the escaping steam. | 10-24-2013 |
| 20130276823 | Hyperbaric CNX for Post-Wafer-Saw Integrated Clean, De-Glue, and Dry Apparatus & Process - Silicon plates can be cleaned, rinsed and dried by hyperbaric superheated liquid and superheated steam. The superheated liquid can be used to clean and rinse the silicon plates after being saw from a silicon block. A slow drain can be open to remove the superheated liquid. A fast drain then can be open, preferably to atmosphere, to allow steam to vent through bottom. The fast drain can function as a drying process, vaporizing water droplets down the drain with the escaping steam. | 10-24-2013 |
| 20130276824 | PROCESS FOR CLEANING A COMPOUND SEMICONDUCTOR WAFER - A process for cleaning a compound semiconductor wafer; the compound semiconductor wafer comprises, taking gallium arsenide (GaAs) as a representative, a group III-V compound semiconductor wafer. The process comprises the following steps: 1) treating the wafer with a mixture of dilute ammonia, hydrogen peroxide and water at a temperature not higher than 20° C.; 2) washing the wafer with deionized water; 3) treating the wafer with an oxidant; 4) washing the wafer with deionized water; 5) treating the wafer with a dilute acid solution or a dilute alkali solution; 6) washing the wafer with deionized water; and 7) drying the resulting wafer. The process can improve the cleanliness, micro-roughness and uniformity of the wafer surface. | 10-24-2013 |
| 20130276825 | TREATMENT PROCESS FOR AN ISOMERIZATION UNIT - One exemplary embodiment can be a process for treating an interior of equipment for an isomerization unit. Generally, the isomerization unit includes at least one of a drying zone, an isomerization reaction zone, and a stabilizer zone, for receiving a feed stream. Usually, the feed stream includes one or more C4-C8 hydrocarbons. The process can include combining an anhydrous hydrogen stream and anhydrous organic chloride stream to form a hydrogen chloride feedstock, and passing the hydrogen chloride feedstock to a reaction zone containing a catalyst including at least one of nickel, palladium, and platinum on an alumina support to form a hydrogen chloride stream, and passing the hydrogen chloride stream upstream of the isomerization reaction zone. | 10-24-2013 |
| 20130291891 | METHOD FOR CLEANING SILICON WAFER AND APPARATUS FOR CLEANING SILICON WAFER - A silicon wafer after being cleaned by using a cleaning liquid is rinsed by using carbonic water. According to such a silicon wafer cleaning method, generation of static due to a rinsing treatment is not caused, so that an electrostatic breakdown is not caused, adhesion of dirt to a cleaned silicon wafer surface due to the static is not caused, adhesion of metal impurities can be prevented in the rinsing treatment of the silicon wafer and, while giving consideration to the cost, furthermore, a rinsing treatment using a clean rinsing liquid free from causing any residue can be performed. | 11-07-2013 |
| 20130306102 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE - A method of manufacturing a semiconductor device includes: holding a semiconductor substrate with a surface inclined with respect to the vertical direction and the horizontal direction; and immersing the semiconductor substrate in a cleaning solution including an acid. | 11-21-2013 |
| 20130319461 | Recycling Method for Waste Ceramic Filters - Disclosed is a recycling method for waste ceramic filters, and the recycling method includes the steps of heating a waste ceramic filter that no longer has the oil filtering effect, applying an acid to the waste ceramic filter to remove unwanted substances attached on the filter, performing a washing or dewatering step to remove any acid solution remained on the ceramic filter, and performing a drying step to dry the ceramic filter. | 12-05-2013 |
| 20140000649 | PHOTOVOLTAIC SUBSTRATE CLEANING SYSTEM AND METHOD | 01-02-2014 |
| 20140000650 | PROCESS FOR ETCHING A RECESSED STRUCTURE FILLED WITH TIN OR A TIN ALLOY | 01-02-2014 |
| 20140007903 | Methods of Removing a Protective Layer - A method of removing a metal protective layer from a surface of a reactor component comprising treating the metal protective layer with one or more chemical removal agents to remove at least a portion of the metal protective layer from the reactor component. A method of removing a metal protective layer from a surface of a reactor component comprising treating the metal protective layer to remove the metal protective layer from the reactor component, and determining a thickness of the reactor component following treatment. | 01-09-2014 |
| 20140048100 | METHOD FOR CLEANING SEMICONDUCTOR WAFER - The present invention provides a method for cleaning a semiconductor wafer, in which the method includes cleaning steps of HF cleaning, ozonated water cleaning and HF cleaning in this order at least one time, wherein in the HF cleaning carried out last in the method for cleaning the semiconductor wafer, cleaning is so carried out that an oxide film formed on a surface of the semiconductor wafer by the ozonated water is not entirely removed and to remain a part of a thickness thereof on the surface of the semiconductor wafer. As a result, a method for cleaning a semiconductor wafer in which a metal impurity level and a particle level can be reduced simultaneously in the cleaning of the semiconductor wafer is provided. | 02-20-2014 |
| 20140060574 | IN-SITU TCO CHAMBER CLEAN - The present invention discloses new chamber clean chemistries for low temperature, gas phase, in-situ removal of fluorine doped tin oxide (FTO) films. These new in-situ cleaning chemistries will enable solar glass and low-emissivity glass manufacturers to improve the quality of FTO films produced, as well as reduce costs associated manual cleaning of FTO deposition systems. The end result is increased production throughput and better quality FTO films. This is achieved by using gas phase, in-situ cleaning molecules, such as, but not limited to, HI, CH | 03-06-2014 |
| 20140076355 | TREATMENT APPARATUS, METHOD FOR MANUFACTURING TREATMENT LIQUID, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE - According to one embodiment, a treatment apparatus includes an electrolysis unit, an alkali addition unit, and a treatment unit. The electrolysis unit includes an anode electrode and a cathode electrode. The electrolysis unit is configured to electrolyze a solution containing an alkali containing no metal, hydrochloric acid, and water. The alkali addition unit is configured to further add the alkali containing no metal to a solution that has undergone the electrolysis. The treatment unit is configured to perform treatment of an object to be treated using a solution that has undergone the electrolysis and in which the alkali containing no metal is further added. | 03-20-2014 |
| 20140076356 | COMPOSITION OF SOLUTIONS AND CONDITIONS FOR USE ENABLING THE STRIPPING AND COMPLETE DISSOLUTION OF PHOTORESISTS - The present invention relates to the formulation of a chemical, comprised of an ether solvent as the principal solvent, an ether or non-ether cosolvent, an acid, optionally a surfactant and optionally a corrosion inhibitor, dedicated to the complete and selective stripping by pure dissolution of photoresists (novolac and semi-novolac) of all thicknesses used in microelectronic component integration processes. Said solution is optimized to dissolve the polymer matrix while ensuring and protecting the physicochemical integrity of exposed materials such as metal interconnections (copper, aluminum), dielectrics (SiO | 03-20-2014 |
| 20140109931 | Cleaning Formulations - A composition and method for removing copper-containing post-etch and/or post-ash residue from patterned microelectronic devices is described. The removal composition includes water, a water-miscible organic solvent, an amine compound, an organic acid, and a fluoride ion source. The compositions effectively remove the copper-containing post-etch residue from the microelectronic device without damaging exposed low-k dielectric and metal interconnect materials. | 04-24-2014 |
| 20140116464 | METHOD FOR CLEANING METAL GATE SEMICONDUCTOR - Provided is a method for cleaning a metal gate semiconductor, by which a resist adhering to a semiconductor can be effectively stripped while etching of metal gates is suppressed. The method includes an ashing step (step s | 05-01-2014 |
| 20140123999 | METHOD FOR PRODUCING ELECTRODES - The invention relates to a method for producing an electrode, in particular a negative electrode, of an electrochemical cell having a metal substrate, wherein the method includes the steps of treating the metal substrate with UV irradiation and treating the metal substrate using an organic acid. | 05-08-2014 |
| 20140216499 | CLEANING COMPOSITION AND METHOD FOR SEMICONDUCTOR DEVICE FABRICATION - A method of cleaning a substrate such as semiconductor substrate for IC fabrication is described that includes cleaning the semiconductor substrate with a mixture of ozone and one of an acid and a base. Exemplary acids and bases include HCl, HF, and NH | 08-07-2014 |
| 20140305468 | METHOD FOR EXFOLIATING COATING LAYER OF ELECTRODE FOR ELECTROLYSIS - The present invention relates to a method for effectively exfoliating a coating layer from the surface of the conductive substrate of a used electrode for electrolysis comprising an insoluble metal electrode having the coating layer containing electrode substance comprising noble metals and/or their metal oxides on the surface of the used electrode substrate comprising valve metals, such as titanium and tantalum or valve metal alloys, and then to recover the electrode substances and/or electrode substrate for recycling use. The method for exfoliating comprises the steps of treating the insoluble metal electrode surface having the coating layer, in succession, with an alkali treatment process using a caustic alkali aqueous solution, a heating and a baking process and an acid treatment process, the alkali treatment process being conducted by applying an alkali treatment solution prepared by adding thickener to the caustic alkali aqueous solution. | 10-16-2014 |
| 20140338696 | Process for dissolving an oxide layer - The invention relates to a process for dissolving a chromium, iron, nickel, zinc and radionuclides containing oxide layer, in particular for breaking down oxide layers deposited on inner surfaces of systems and components of a nuclear power plant, by means of an aqueous decontamination solution containing methanesulfonic acid, which flows in a loop, wherein in regular intervals small amounts of permanganic acid are added, and following reaction of the permanganic acid a second loop is added on in bypass and the dissolved cations and anions are removed by ion-exchange resins from the decontamination solution. | 11-20-2014 |
| 20140352717 | METHOD FOR DECOMPOSING AN OXIDE LAYER - The invention relates to a method for decomposing an oxide layer containing chromium, iron, nickel, and radionuclides by means of an aqueous oxidative decontamination solution, which contains permanganic acid and a mineral acid and which flows in a circuit (K | 12-04-2014 |
| 20150013716 | METHOD FOR PREVENTION OF YELLOWING ON SURFACE OF STEEL SHEET AFTER PICKLING - In a method for prevention of yellowing on a surface of a steel sheet subjected to re-pickling, washing with water and drying after a surface of a continuously annealed steel sheet is pickled to remove Si-containing oxide layer from a surface layer of the steel sheet, the surface of the steel sheet is held at a wet state between the pickling and the re-pickling and between the re-pickling and the washing, and more preferably the washing is carried out with water having an iron ion concentration decreased to not more than 20 g/L, whereby the yellowing on the surface of the steel sheet after the pickling is prevented. Thus, cold rolled steel sheets being excellent in not only the appearance quality but also the phosphatability and corrosion resistance after painting are manufactured stably. | 01-15-2015 |
| 20150096590 | METHOD FOR CLEANING QUARTZ REACTION TUBE - A method for cleaning quartz reaction tube is disclosed. The method includes the steps of: introducing a quartz reaction tube to a cleaning chamber, wherein the quartz reaction tube comprises a first end and a second end; sealing the first end and the second end of the quartz reaction tube with a first sealing element and a second sealing element respectively, wherein the first sealing element is coupled to an input pipe and a cleaning rod, and the second sealing element is coupled to an output pipe; supplying a first cleaning agent into the quartz reaction tube from the input pipe; utilizing the cleaning rod to perform a cleaning process; and expelling the first cleaning agent from the output pipe. | 04-09-2015 |
| 20150128993 | CHAMBER CLEANING WHEN USING ACID CHEMISTRIES TO FABRICATE MICROELECTRONIC DEVICES AND PRECURSORS THEREOF - The present invention provides treatment strategies that reduce contamination on wafer surfaces that are treated with acid chemistries. The strategies are suitable for use with a wide variety of wafers, including those including sensitive microelectronic features or precursors thereof. These strategies involve a combination of neutralizing and rinsing strategies that quickly and effectively remove residual acid and acid by-products from both the front side of workpiece(s) as well as from other processing chamber surfaces that can be causes of contamination. | 05-14-2015 |
| 20160013047 | SEMICONDUCTOR SUBSTRATE CLEANING SYSTEM AND METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATE | 01-14-2016 |
| 20160024438 | CLEANING SOLUTION AND METHODS OF CLEANING A TURBINE ENGINE - A cleaning solution for a turbine engine includes water within a range between about 68.65 percent and about 99.63 percent by volume of the cleaning solution; a first organic acidic component within a range between about 0.1 percent and about 15 percent by volume of the cleaning solution; wherein the organic acid comprises citric acid; a second organic acidic component within a range between about 0.1 percent and about 15 percent by volume of the cleaning solution; wherein the organic acid comprises glycolic acid; isoropylamine sulphonate within a range between about 0.07 percent and 0.14 percent by volume of the cleaning solution; alcohol ethoxylate within a range between about 0.035 percent and 0.07 percent by volume of the cleaning solution; triethanol amine within a range between about 0.035 percent and 0.07 percent by volume of the cleaning solution; sodium lauriminodipropionate within a range between about 0.03 percent and 1.0 percent by volume of the cleaning solution. The cleaning solution has a pH value in the range between about 2.5 and about 7.0. | 01-28-2016 |
| 20160024444 | GEL SOLVENT AND METHOD OF REMOVING DIFFUSION AND OVERLAY COATINGS IN GAS TURBINE ENGINES - A method of stripping an engine component may comprise applying an acidic gel solvent to a coating of a surface of the engine component, leaving the acidic gel solvent on the surface of the engine component for a predetermined duration, and removing the acidic gel solvent from the surface of the engine component. The method may further include mixing an acid with a gelling agent to form the acidic gel solvent. The acid may comprise hydrochloric acid. The gelling agent may comprise a cellulosic material. The gelling agent may comprise a carbohydrate. The method may further include rinsing the acidic gel solvent from the surface of the engine component. The coating may comprise at least one of a diffusion coating or an overlay coating. | 01-28-2016 |
| 20160133455 | WAFER CLEANING APPARATUS AND WAFER CLEANING METHOD USING THE SAME - The object of the present invention is to provide a wafer cleaning apparatus that reduces the amount of dissolved oxygen, without using hydrogen peroxide, to be able to reduce the deformation, etc. of a wafer and to reduce silicon consumption and a wafer cleaning method using the same. The present invention provides a wafer cleaning apparatus comprising: a first thin film contactor that receives drug solution for removing an oxide film or ultra pure water to separate and discharge gas dissolved in the drug solution for removing the oxide film or the ultra pure water; a second thin film contactor that receives the drug solution for removing the oxide film or the ultra pure water discharged from the first thin film contactor; a vacuum pump that discharges gas separated in the first and second thin film contactors to the outside; and a process vessel that stores the drug solution for removing the oxide film or the ultra pure water discharged from the second thin film contactor, and a wafer cleaning method using the same. | 05-12-2016 |
| 20160160361 | Inhibiting Toxicity of Acid Systems Used for Treating Metals - In some examples of inhibiting toxicity of acid systems used for treating metals, a metal is pickled with a pickling composition that includes a first quantity of an acid and a second quantity of a corrosion inhibiting iodide salt. A mixture of the first quantity and the second quantity modify metallic properties of the pickled metal. The corrosion inhibiting iodide salt is added directly to the pickling composition independent of any other corrosion inhibitor or corrosion inhibiting polymer. | 06-09-2016 |
| 20160163533 | TANTALUM OXIDE FILM REMOVAL METHOD AND APPARATUS - In a tantalum oxide film removal method and apparatus, a silicon substrate having a tantalum oxide film is supported on a spin chuck. A mixed aqueous solution including hydrofluoric acid and organic acid is supplied to the silicon substrate while rotating the silicon substrate together with the spin chuck. The mixed aqueous solution comes into contact with the tantalum oxide film existing on the silicon substrate to remove the tantalum oxide film by the chemical reaction therebetween. | 06-09-2016 |
| 20160181087 | Particle removal with minimal etching of silicon-germanium | 06-23-2016 |
