| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 118066000 | Plural treatments | 7 |
| 20100199911 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus including: a heating part for heating a wafer; a transport part through which a wafer is transported; a first transfer arm that receives a wafer from the heating part and places the wafer on the transport part; and a second transfer arm including a pair of plate-like tweezers that receives the wafer placed on the transport part from the transport part and transfers the wafer. The transport part includes a cooling plate having a cooling surface on which a wafer is placed. The cooling plate includes a temperature-adjusting channel through which a temperature-adjusting water is circulated for cooling the cooling plate to a temperature lower than a temperature of the heating process of the heating part. The cooling surface is provided with a recess that is similar in shape to and slightly larger than a planar shape of the pair of tweezers. | 08-12-2010 |
| 20130074764 | FILM-FORMING APPARATUS AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE - According to one embodiment, a film-forming apparatus includes a coating unit which introduces a liquid material to a substrate with a groove and fills the liquid material into the groove, thereby forming a liquid layer, a drying unit which solidifies the liquid layer by drying, and a vapor supply unit which applies a vapor to a surface of the liquid layer during the drying | 03-28-2013 |
| 20130269602 | TRANSPORTING APPARATUS AND COATING APPARATUS - A transporting apparatus which transports a heated substrate, the substrate having a liquid containing a metal coated thereon, the transporting apparatus including a holding part which is moveable and holds the heated substrate, and a temperature control part which controls the temperature of the holding part. | 10-17-2013 |
| 20130312659 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING SYSTEM - A solvent vapor is made to adhere efficiently to the surface of a resist pattern without using an ultraviolet irradiation process to improve processing accuracy, to reduce processing time and to suppress the diffusion of the solvent outside a substrate processing system. The surface of a resist pattern R formed on a semiconductor wafer W by an exposure process and a developing process is coated with water molecules m. A solvent vapor of a water-soluble solvent, such as NMP, is spouted on the surface of the resist pattern R coated with the water molecules m. A surface layer of the resist pattern R is swollen by the solvent vapor combined with the water molecules m to achieve a smoothing process. The water molecules m and the solvent s remaining on the resist pattern R on the wafer W after the smoothing process are removed by drying. | 11-28-2013 |
| 20160163573 | SUBSTRATE TREATING APPARATUS WITH PARALLEL SUBSTRATE TREATMENT LINES - A substrate treating apparatus for treating substrates includes a plurality of substrate treatment lines arranged vertically for carrying out plural types of treatment on the substrates while transporting the substrates substantially horizontally, and a controller for changing processes of treatment carried out on the substrates for each of the substrate treatment lines. By changing the processes of treatment carried out for the substrates for each substrate treatment line, the processes of treatment carried out for the substrates can be changed for each substrate conveniently. Thus, a plurality of different processes of treatment corresponding to the number of substrate treatment lines can be carried out in parallel for the respective substrates. | 06-09-2016 |
| 118067000 | Running length work | 2 |
| 20100139557 | REACTOR TO FORM SOLAR CELL ABSORBERS IN ROLL-TO-ROLL FASHION - A reactor to anneal a workpiece including a precursor material deposited over a flexible substrate is provided. The anneal process transforms the precursor material into a solar cell absorber when the workpiece is advanced through a process gap of the reactor. The process gap is defined by a peripheral wall including a top wall, a bottom wall and side walls. An exhaust opening located between the entrance and exit openings to remove gases from the continuous process gap. At least one roller having a rotational axis that is substantially transverse to the process direction and which has an outer roller surface disposed at least partially below the top wall of the continuous process gap forms a reduced gap between the outer surface of the roller and the bottom wall. The reduced gap is smaller than the process gap and the at least one roller is configured such that the workpiece travels through the reduced gap with the precursor material facing the at least one roller as the workpiece is moved between the entrance opening and the exit opening in a process direction. | 06-10-2010 |
| 20130213298 | PRODUCTION FACILITY AND PRODUCTION PROCESS FOR HOT DIP GALVANNEALED STEEL PLATE - The present invention provides a production facility of hot dip galvannealed steel plate able to produce hot dip galvannealed steel plate on production conditions optimal at all times despite rapid changes in the steel type, plating deposition, and other external factors, wherein the production facility | 08-22-2013 |
