Class / Patent application number | Description | Number of patent applications / Date published |
118733000 | Chamber seal | 15 |
20080210170 | SEMICONDUCTOR MANUFACTURING EQUIPMENT AND MANUFACTURING METHOD OF THE SAME - A semiconductor manufacturing equipment includes a first chamber that has a first connection hole, a second chamber that has a second connection hole connected to the first connection hole of the first chamber, an O-ring that is provided between the first chamber and the second chamber so as to surround the first connection hole and the second connection hole, and a cover portion that covers a space between the first chamber and the second chamber. | 09-04-2008 |
20080236499 | Vent groove modified sputter target assembly and apparatus containing same - A sputter target assembly including vent grooves having a certain configuration so as to reduce target arcing during the physical vapor deposition of a film. | 10-02-2008 |
20090056631 | APPARATUS FOR MANUFACTURING SEMICONDUCTOR LAYER - An apparatus for manufacturing a semiconductor layer on a substrate typically includes a reaction chamber, a first feed pipe, and a second feed pipe. The reaction chamber is configured for receiving the substrate therein. The first feed pipe and the second feed pipe communicate with the reaction chamber, providing a first raw material gas and a second raw material gas to the reaction chamber, respectively. The first feed pipe includes a first portion and a second portion. The first portion and the second portion are detachably connected to each other, allowing the second portion to be easily removed and replaced. | 03-05-2009 |
20090120368 | ROTATING TEMPERATURE CONTROLLED SUBSTRATE PEDESTAL FOR FILM UNIFORMITY - Substrate processing systems are described. The systems may include a processing chamber, and a substrate support assembly at least partially disposed within the chamber. The substrate support assembly is rotatable by a motor yet still allows electricity, cooling fluids, gases and vacuum to be transferred from a non-rotating source outside the processing chamber to the rotatable substrate support assembly inside the processing chamber. Cooling fluids and electrical connections can be used to raise or lower the temperature of a substrate supported by the substrate support assembly. Electrical connections can also be used to electrostatically chuck the wafer to the support assembly. A rotary seal or seals (which may be low friction O-rings) are used to maintain a process pressure while still allowing substrate assembly rotation. Vacuum pumps can be connected to ports which are used to chuck the wafer. The pumps can also be used to differentially pump the region between a pair of rotary seals when two or more rotary seals are present. | 05-14-2009 |
20090272324 | SLIT VALVE HAVING INCREASED FLOW UNIFORMITY - Methods and apparatus for increasing flow uniformity are provided herein. In some embodiments, a slit valve having increased flow uniformity may be provided, the slit valve may include a housing having an opening disposed therethrough, the opening configured to allow a substrate to pass therethrough; a gas inlet formed in the housing; an outer plenum disposed in the housing and coupled to the gas inlet; an inner plenum disposed in the housing and coupled to the outer plenum via a plurality of holes; and a plurality of gas outlets disposed in the housing and fluidly coupling the opening to the inner plenum. | 11-05-2009 |
20100050945 | SUBSTRATE PROCESSING APPARATUS - When a quartz part is placed on a floor, the inside of a furnace is not polluted by contaminants attached from the floor to a seal surface of the quartz part and entering the inside of the furnace. A substrate processing apparatus includes a reaction tube, a first joining surface, a second joining surface, and a third joining surface. The reaction tube includes a quartz inner tube and a quartz outer tube. The first joining surface is configured to air-tightly join the outer tube and a quartz manifold. The second joining surface is configured to air-tightly join the manifold and a quartz seal cover. The third joining surface is configured to air-tightly join the seal cover and a seal cap. An O-ring is installed at least one of the first, second, and third joining surfaces, and a protrusion is installed outside the O-ring installed at the jointing surface. | 03-04-2010 |
20110041769 | APPARATUS FOR CHEMICAL VAPOR DEPOSITION AND APPARATUS FOR PROCESSING SUBSTRATE - Provided are a chemical vapor deposition (CVD) apparatus and a substrate processing apparatus. The CVD apparatus includes a chamber defining a processing chamber for forming a thin film on a substrate, a shower head that discharges processing gas into the processing chamber, a lid for opening and closing the chamber, a hinge part that pivotably couples the lid to the chamber at one side of the lid, a clamping part is provided to press the other side of the lid to secure the lid to the chamber, and a control part adapted to raise or lower the one side of the lid when the clamping part is pressing the other side of the lid. | 02-24-2011 |
20120006268 | SUBSTRATE PROCESSING APPARATUS AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A CVD device has a reaction furnace ( | 01-12-2012 |
20130068165 | MICROFLUIDIC DEVICE AND METHOD USING DOUBLE ANODIC BONDING - A microfluidic device for use with a microfluidic delivery system, such as an organic vapor jet printing device, includes a glass layer that is directly bonded to a microfabricated die and a metal plate via a double anodic bond. The double anodic bond is formed by forming a first anodic bond at an interface of the microfabricated die and the glass layer, and forming a second anodic bond at an interface of the metal plate and the glass layer, where the second anodic bond is formed using a voltage that is lower than the voltage used to form the first anodic bond. The second anodic bond is formed with the polarity of the voltage reversed with respect to the glass layer and the formation of the first anodic bond. The metal plate includes attachment features that allow removal of the microfluidic device from a fixture. | 03-21-2013 |
20130333621 | APPARATUS FOR THE DEPOSITION OF HIGH DIELECTRIC CONSTANT FILMS - An integrated deposition system is described that is capable of vaporizing low vapor pressure liquid precursors and conveying the vapor to a processing region to fabricate advanced integrated circuits. The integrated deposition system includes a heated exhaust system, a remote plasma generator, a processing chamber, a liquid delivery system, and a computer control module that together create a commercially viable and production worthy system for depositing high capacity dielectric materials from low vapor pressure precursors. | 12-19-2013 |
20140060435 | DOORS FOR HIGH VOLUME, LOW COST SYSTEM FOR EPITAXIAL SILICON DEPOSITION - Apparatus for use in an inline substrate processing tool are provided herein. In some embodiments, a door for use in an inline substrate processing tool between a first and a second substrate processing module coupled to one another in a linear arrangement may include a reflective body disposed between two cover plates of substantially transparent material, configured to reflect light and heat energy into each of the at first and second substrate processing modules, wherein the door is selectively movable, via an actuator coupled to the door, between an open position that fluidly couples the first and second substrate processing modules to a closed position that isolates the first substrate processing module from the second substrate processing module. | 03-06-2014 |
20140076236 | METHOD AND SYSTEM FOR SUPPLYING A CLEANING GAS INTO A PROCESS CHAMBER - A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region. | 03-20-2014 |
20140311411 | SHOWERHEAD HAVING COOLING SYSTEM AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SHOWERHEAD - Provided is a substrate processing apparatus. The substrate processing apparatus includes a chamber body having an opened upper side, the chamber body providing an inner space in which processes with respect to a substrate are performed, a chamber lid disposed on an upper portion of the chamber body to close the opened upper side of the chamber body, and a showerhead disposed on a lower portion of the chamber lid to supply a reaction gas into the inner space. The showerhead includes a flange contacting the chamber lid, the flange having a passage recessed from a top surface of the flange to allow a refrigerant to flow therein, and a flat plate disposed inside the flange, the flat plate having at least one injection hole for injecting the reaction gas in a thickness direction thereof. | 10-23-2014 |
20140366808 | GAS PROCESSING APPARATUS - A gas processing apparatus includes a process chamber for installing a process target therein, a through-hole being air-tightly in communication with a gas supply pipe, an injector for supplying gas into the process chamber, a sleeve being engaged to an outer peripheral surface of the injector inside the through-hole, an annular sealing member engaged to the outer peripheral surface of the injector, an engagement surface facing the sealing member, and a pressing part for pressing the sleeve toward the outer side of the process chamber. The pressing part compresses the sealing member by exerting pressure to the engagement surface from an end surface of the sleeve toward the sealing member, so that an inside of the injector and an outside of the injector are air-tightly sealed. | 12-18-2014 |
20140373785 | BELLOWS-FREE RETRACTABLE VACUUM DEPOSITION SOURCES - Systems are provided that include one or more retractable deposition source assemblies that eliminate the need for a bellows, but do not require breaking the ultra-high vacuum of a growth module for source replacement or recharging with deposition material. Systems of the present invention may include source heads that allow for a differential pumping option that provides marked improvement in base pressure around the source head (and material) that provides longer lifetimes for sources in corrosive, reactive or oxidizing environments. In addition, systems of the invention do not require an entire growth module to be vented to refill or repair an effusion source. Instead, for maintenance events that are tied to a specific source, a retractable source assembly of the present invention allows the sources to be withdrawn from the system, isolated from the growth environment, and removed without venting the entire chamber of the growth module. | 12-25-2014 |