| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 118718000 | Running length work | 28 |
| 20080202418 | ENTRY LOCK SYSTEM, WEB PROCESSING INSTALLATION, AND METHOD FOR USING THE SAME - An entry lock system for feeding web from a web supply to a web processing installation, the entry lock system comprising a first chamber having an inlet port and an outlet port, a second chamber having an inlet port, a first seal positioned at the inlet port of the first chamber, a second seal positioned between the first chamber and the second chamber, a first web storage unit positioned in the first chamber; and a second web storage unit positioned in the second chamber. | 08-28-2008 |
| 20090050057 | APPARATUS FOR CONTINUOUS COATING - Apparatus for continuous coating has a chamber wall which forms a processing chamber, thermal insulation which forms a processing area within the chamber, a transportation device for substrates located in the processing area with a substrate transportation direction of the substrates lying in the lengthwise extension of the apparatus for continuous coating, and heating equipment which heats the substrates, is designed to minimize unwanted coating, in particular of parts of the apparatus, in order to minimize the expense of maintaining and servicing the apparatus A condensation element is positioned in the processing chamber, which extends into the processing area and binds the arising vapor through condensation. | 02-26-2009 |
| 20090056628 | PROCESS AND APPARATUS FOR FORMING NANOPARTICLES USING RADIOFREQUENCY PLASMAS - Methods and apparatus for producing nanoparticles, including single-crystal semiconductor nanoparticles, are provided. The methods include the step of generating a constricted radiofrequency plasma in the presence of a precursor gas containing precursor molecules to form nanoparticles. Single-crystal semiconductor nanoparticles, including photoluminescent silicon nanoparticles, having diameters of no more than 10 nm may be fabricated in accordance with the methods. | 03-05-2009 |
| 20090133628 | VACUUM DEVICE FOR CONTINUOUS PROCESSING OF SUBSTRATES - A continuous vacuum system for processing substrates has an inlet air lock, an outlet air lock, at least one process chamber, and a device for conveying the substrates through the continuous system. To create a continuous system having a compact design and high throughput for plasma-enhanced treatment of substrates at a reduced pressure, which ensures a simple, rapid and secure handling of the substrates with a high capacity of the substrate carrier, the conveying device has at least one plasma boat in which the substrates are arranged on a base plate in a three-dimensional stack in at least one plane at a predefined distance from one another with intermediate carriers in between. At least the intermediate carriers are made of graphite or another suitable electrically conductive material and can be acted upon electrically with an alternating voltage via an electric connection. | 05-28-2009 |
| 20090133629 | IN-LINE FILM-FORMATION APPARATUS - Provided is an in-line film-formation apparatus including: deposition sources, deposition-preventing plates, and a screen. The deposition sources store different film-formation materials, and include openings extending in the width directions of a substrate, which is perpendicular to the conveying direction. The openings, arranged in parallel with each other, are disposed respectively on the upstream and the downstream sides in the conveying direction. The plates, partitioning a co-deposition chamber from adjacent deposition chambers and placed, in parallel to each other, on the upstream and the downstream sides in the conveying direction, limit a deposition region of the vapor from the openings. The screen limits and makes the deposition regions of the substrate for vapor from openings coincide with deposition regions limited by the plates. Thereby, the formation of a mono-content film is prevented and only the mixed film is formed on the substrate. | 05-28-2009 |
| 20090255467 | APPARATUS AND METHODS FOR MANUFACTURING THIN-FILM SOLAR CELLS - Improved methods and apparatus for forming thin-film layers of semiconductor material absorber layers on a substrate web. According to the present teachings, a semiconductor layer may be formed in a multi-zone process whereby various layers are deposited sequentially onto a moving substrate web. | 10-15-2009 |
| 20100107979 | APPARATUS FOR CONTINUOUS FABRICATING SUPERCONDUCTING TAPES - Provided is an apparatus for continuously fabricating superconducting tapes. An evaporation using drum in dual chamber (EDDC) method is suitable for mass production of high-temperature superconducting tapes. However, the EDDC method is limited to fabrication of high-temperature superconducting tapes having a limited length. In an attempt, high-temperature super-conducting tapes having a sufficiently large length can be fabricated using the EDDC method by releasing a long high-temperature superconducting tape from one reel and winding the long high-temperature superconducting tape around the other reel. In this case, it is important to stably move a high-temperature superconducting tape spirally wound around a drum from one reel to the other reel. Therefore, the provided apparatus uses endless tract belts separately disposed around a drum to stably and continuously move a high-temperature superconducting tape spirally wound around the drum along the centerline of the drum from one reel to the other reel. | 05-06-2010 |
| 20100242842 | Evaporation system - An evaporation system for forming evaporation films on a substrate film, includes: a first drive portion which is driven to rotate to thereby feed out the substrate film; a second drive portion which is driven to rotate to thereby take up the substrate film conveyed to the second drive portion; film-forming rollers which are provided on a conveyance path of the substrate film conveyed between the first drive portion and the second drive portion and which support one surface of the substrate film onto circumferential surfaces of the film-forming rollers; evaporation portions which form the evaporation films on a surface of the substrate film opposite to the surface supported by the film-forming rollers; and a third drive portion as defined herein. | 09-30-2010 |
| 20100313810 | CONTINUOUS FILM FORMING APPARATUS - The plasma CVD apparatus of the present invention comprises a pair of deposition rolls | 12-16-2010 |
| 20110120373 | METHODS AND DEVICES FOR PROCESSING A PRECURSOR LAYER IN A GROUP VIA ENVIRONMENT - Methods and devices for high-throughput printing of a precursor material for forming a film of a group IB-IIIA-chalcogenide compound are disclosed. In one embodiment, the method comprises forming a precursor layer on a substrate, the precursor is subsequently processed in one or more steps in a VIA environment. | 05-26-2011 |
| 20110139072 | CONTINUOUS DEPOSITION APPARATUS - Provided is a continuous deposition apparatus wherein replacement operations of a feeding unit and a take-up unit are easily performed. The continuous deposition apparatus is provided with: a vacuum chamber ( | 06-16-2011 |
| 20110214609 | ATMOSPHERIC PLASMA APPARATUS - An atmospheric plasma apparatus for depositing a layer on a continuous base film transported in its longitudinal direction includes an electrode for treatment provided opposite to the peripheral surface of a drum electrode and upstream of an electrode for deposition in the direction of transportation of the base film, an electric power source for treatment which applies voltages to the electrode for treatment, and a reactive gas-feeding element for feeding a reactive gas for surface treatment between the drum electrode and the electrode for treatment. The atmospheric plasma apparatus as such is capable of depositing a layer without impairing effects of surface treatment, allowing a higher adhesion between the base film and the layer deposited thereon and, consequently, an efficient, successive deposition of a high-quality layer. | 09-08-2011 |
| 20120174864 | PLASMA CVD APPARATUS - The disclosed plasma CVD apparatus ( | 07-12-2012 |
| 20120180725 | CVD APPARATUS - A cold wall type CVD apparatus that can enhance a raw material yield is provided. The CVD apparatus has a raw material gas jetting unit | 07-19-2012 |
| 20120247388 | ROLL-TO-ROLL EVAPORATION SYSTEM AND METHOD TO MANUFACTURE GROUP IBIIIAVIA PHOTOVOLTAICS - The present inventions provide method and apparatus that employ constituents vaporized from one or more constituent supply source or sources to form one or more films of a precursor layer formed on a surface of a continuous flexible workpiece. Of particular significance is the implementation of vapor deposition systems that operate upon a horizontally disposed portion of a continuous flexible workpiece and a vertically disposed portion of a continuous flexible workpiece, preferably in conjunction with a short free-span zone of the portion of a continuous flexible workpiece. | 10-04-2012 |
| 20120325147 | METHOD FOR DEPOSITING A POLYMER LAYER CONTAINING NANOMATERIAL ON A SUBSTRATE MATERIAL AND APPARATUS - An apparatus for depositing a polymer layer containing nanomaterial on a substrate material includes a carrier for carrying the substrate material; a transport structure for providing a polymerization material near a surface of the substrate material and conducting a gas flow near the surface of the substrate material with the gas flow comprising a nanomaterial; and a plasma chamber wherein a plasma electrode structure is arranged for depositing the polymer layer containing nanomaterial on the surface of the substrate material by applying a plasma polymerization process. | 12-27-2012 |
| 20130014699 | DEPOSITION APPARATUS AND METHOD FOR MANUFACTURING FILM BY USING DEPOSITION APPARATUS - A vapor deposition device including an evaporation source for evaporating a vapor-depositing material; a transportation section including first and second rolls for holding the substrate in the state of being wound therearound and a guide section for guiding the substrate; and a shielding section, located in a vapor deposition possible zone, for forming a shielded zone which is not reachable by the vapor-depositing material from the evaporation source. Vapor deposition zones include a planar transportation zone for transporting the substrate such that the surface of the substrate to be subjected to the vapor-depositing material is planar; and the transportation section is located with respect to the evaporation source such that the vapor-depositing material is not incident on the substrate in a direction of the normal to the substrate in the vapor deposition possible zone excluding the shielded zone. | 01-17-2013 |
| 20130061803 | Roll-To-Roll PVD System and Method to Manufacture Group IBIIIAVIA Photovoltaics - The present inventions provide method and apparatus that employ constituents from one or more constituent supply source or sources to form one or more films of a precursor layer formed on a surface of a continuous flexible workpiece. Of particular significance is the implementation of PVD systems that operate upon a horizontally disposed portion of a continuous flexible workpiece and a vertically disposed portion of a continuous flexible workpiece, preferably in conjunction with a short free-span zone of the portion of a continuous flexible workpiece. | 03-14-2013 |
| 20130133577 | PLASMA CVD APPARATUS - A plasma CVD apparatus capable of preventing unnecessary deposition on a supplying portion of a source gas so as to suppress generation of flakes, and thereby depositing a CVD coating excellent in quality is provided. This plasma CVD apparatus includes a vacuum chamber, a vacuum pump system for vacuuming an interior of the vacuum chamber, a deposition roller around which a substrate is wound, the deposition roller being provided in the vacuum chamber, a gas supplying portion for supplying the source gas to the interior of the vacuum chamber, and a plasma power supply for forming a plasma generating region in the vicinity of a surface of the deposition roller and thereby depositing a coating on the substrate. The gas supplying portion is provided in a plasma non-generating region positioned on the opposite side of the plasma generating region with respect to the deposition roller. | 05-30-2013 |
| 20130186334 | VACUUM COATING APPARATUS - Provided is a vacuum deposition apparatus including a vacuum chamber, a deposition roller that is arranged in the vacuum chamber, and winds a substrate in a sheet form subject to deposition, and a magnetic field generation unit that is provided inside the deposition roller, and generates a magnetic field on a surface of the deposition roller, where the magnetic field generation unit includes an inside magnet arranged along an axial direction of the deposition roller and an outside magnet having a polarity opposite to the inside magnet and surrounding, in an annular form, the inside magnet, and the inside magnet is formed so as to be narrower in width along the axial direction of the deposition roller than a width of an extent of winding of the substrate W on the deposition roller in a projection viewed from a deposition surface of the substrate, and is arranged within the extent of the winding of the substrate W. | 07-25-2013 |
| 20130199447 | Continuous Coating Apparatus - Provided is a continuous coating apparatus which can supply a liquid coating material (a molten metal) to a levitation-heating space through various paths, and can easily control a supply flow rate of the liquid coating material, and has a simplified structure. The continuous coating apparatus includes: a vacuum chamber unit through which a coating target passes; a levitation-heating unit disposed in the vacuum chamber unit and generating an evaporation vapor by vaporizing a supplied coating material; and a liquid coating material supply unit connected so that a liquid coating material is supplied to at least one of an upper portion and a lower portion of the levitation-heating unit, and communicating with the outside of the vacuum chamber unit. | 08-08-2013 |
| 20130239890 | Method for Coating a Substrate and Metal Alloy Vacuum Deposition Facility - The present invention provides a process for coating a substrate. A metal alloy layer including at least two metallic elements is continuously deposited on the substrate by a vacuum deposition facility. The facility includes a vapor jet coater for spraying the substrate with a vapor containing the metallic elements in a constant and predetermined relative content, the vapor being sprayed at a sonic velocity. The process may advantageously be used for depositing Zn—Mg coatings. The invention also provides a vacuum deposition facility for continuously depositing coatings formed from metal alloys, for implementing the process. | 09-19-2013 |
| 20140311409 | VAPOR DEPOSITION APPARATUS HAVING PRETREATMENT DEVICE THAT USES PLASMA - A roller-type continuous vapor deposition film-forming apparatus for a substrate that is to be conveyed at high speed, comprising a plasma pretreatment device and a film-forming apparatus provided in series, wherein a substrate conveying compartment | 10-23-2014 |
| 20140331931 | METHOD AND SYSTEM FOR INLINE CHEMICAL VAPOR DEPOSITION - Disclosed are an inline chemical vapor deposition method and system for fabricating a device. The method includes transporting a web or discrete substrate through a deposition chamber having a plurality of deposition modules. A buffer layer, a window layer and a transparent conductive layer are deposited onto the substrate during passage through a first deposition module, a second deposition module and a third deposition module, respectively. Advantageously, the steps for generating the buffer layer, window layer and transparent conductive layer are performed sequentially in a common vacuum environment of a single deposition chamber and the use of a conventional chemical bath deposition process to deposit the buffer layer is eliminated. The method is suitable for the manufacture of different types of devices including various types of solar cells such as copper indium gallium diselenide solar cells. | 11-13-2014 |
| 20140366804 | Performing Atomic Layer Deposition on Large Substrate Using Scanning Reactors - Embodiments relate to a deposition device for depositing one or more layers of material on a substrate using scanning modules that move across the substrate in a chamber filled with reactant precursor. The substrate remains stationary during the process of depositing the one or more layers of material. A chamber enclosing the substrate is filled with reactant precursor to expose the substrate to the reactant precursor. As the scanning modules move across the substrate, the scanning modules remove the reactant precursor in their path and/or revert the reactant precursor to an inactive state. The scanning modules also inject source precursor onto the substrate as the scanning modules move across the substrate. | 12-18-2014 |
| 20150059646 | VAPOR-DEPOSITION DEVICE FOR COATING TWO-DIMENSIONAL SUBSTRATES - A vapor-deposition device for coating two-dimensional substrates with an organic material. The substrates can be positioned within a vacuum chamber above a process chamber or can be moved past the latter by a transport device. A vaporizer for an organic coating material is arranged within the process chamber and opposite the substrates. The process chamber is delimited laterally by shields which, opposite the substrates, extend as far as a feed device for the coating material. The vaporizer includes the feed device for the coating material and radiant heaters underneath the same. This arrangement can achieve, with a high vaporization rate, good homogeneity of the layer thickness and of the layer stoichiometry. | 03-05-2015 |
| 20150075428 | Device for Loading Porous Substrates of Three-Dimensional Shape in Order to be Densified by Directed Flow Chemical Vapor Infiltration - A loader device for loading porous substrates of three-dimensional shapes extending mainly in a longitudinal direction into a reaction chamber of an infiltration oven for densification of the preforms by directed flow chemical vapor infiltration. The device comprising at least one annular loader stage formed by first and second annular vertical walls arranged coaxially relative to each other and defining between them an annular loader space for the porous substrates to be densified. First and second plates respectively cover the bottom portion and the top portion of the annular loader space. The first and second annular vertical walls include support elements arranged in the annular loader space so as to define between them unit loader cells, each for receiving a respective substrate to be densified. The device also comprises gas feed orifices and gas exhaust orifices in the vicinity of each unit loader cell. | 03-19-2015 |
| 20150354051 | APPARATUS AND METHOD FOR NITRIDING GRAIN-ORIENTED ELECTRICAL STEEL SHEET - Provided is an apparatus for nitriding a grain-oriented electrical steel sheet which is very useful in obtaining excellent magnetic properties with no variation, that enables generating glow discharge between positive electrodes and negative electrodes disposed in a nitriding zone and irradiating the generated plasma to a strip to perform appropriate nitriding. | 12-10-2015 |
