Class / Patent application number | Description | Number of patent applications / Date published |
118697000 | Having prerecorded program medium | 51 |
20090044748 | System with multi-location arc threshold comparators and communication channels for carrying arc detection flags and threshold updating - A plasma reactor system for processing a wafer in which respective comparators are coupled to the respective RF transient sensors which are coupled in turn to respective RF power application points. The comparators have respective comparison thresholds. The system further includes a controller programmed to updating the respective thresholds of the comparators with respective updated thresholds for different ones of the steps of the process recipe. | 02-19-2009 |
20090211523 | Apparatus to Control Semiconductor Film Deposition Characteristics - Systems and apparatus are disclosed for adjusting the temperature of at least a portion of the surface of a reaction chamber during a film formation process to control film properties. More than one portion of the chamber surface may be temperature-modulated. | 08-27-2009 |
20100024725 | METHOD OF FORMING STRUCTURES USING DROP-ON-DEMAND PRINTING - A method and apparatus are described for forming a structure on a substrate. The structure may be a circuit element. The method uses a digital specification | 02-04-2010 |
20100037819 | DEVICE FOR POSITIONING NANO MATERIALS - Techniques for positioning the nano-materials onto one or more targets are provided. In some embodiments, a device for positioning the nano-materials onto one or more targets may comprise a delivery line for delivering a gas from a gas supply, an applicator coupled to the delivery line and having a tip for ejecting the gas, the tip being adjustable so as to be oriented at a predetermined ejection angle with respect to said one or more targets, and an actuator coupled to the applicator for driving the applicator to move over said one or more targets and change the orientation of the tip. | 02-18-2010 |
20100050938 | Plasma processing apparatus - A plasma processing apparatus includes a sheet-like electrode for receiving high frequency signals from a plasma, a signal line connected to the electrode, a signal outputter which outputs high frequency signals from the electrode to the exterior, and a controller including of a physical quantity detecting unit, a measurement data storage unit, a measurement processing unit, and a control unit for controlling the apparatus parameters in response to signals from the measurement processing unit and performing control so as to stabilize the plasma condition. The signal line of the sheet-like electrode is formed between at least two layers of dielectric protection film formed on the surface of inner wall/inner cylinder | 03-04-2010 |
20100101493 | Dispense System - Systems and methods for locating and eliminating and/or minimizing non-functional nozzles of dispense systems are described. | 04-29-2010 |
20100132613 | FABRICATION OF LOW DIELECTRIC CONSTANT INSULATING FILM - The present invention relates to a method of lowering dielectric constant of an insulating film including Si, O and CH formed by a chemical vapor deposition process. A process gas containing hydrogen atoms is supplied into a reaction vessel. A microwave is introduced into the reaction vessel to supply a uniform electromagnetic wave, thereby a plasma containing a hydrogen radical is generated in the reaction vessel. The structure of the insulating film is modified by the hydrogen radical contained in the plasma irradiated to the insulating film, lowering the dielectric constant of the film. The microwave is supplied into the reaction vessel through a radial-slot antenna. | 06-03-2010 |
20100162953 | Coating tool - The coating instrument is provided with a coating head which has a plurality of head members, and in which a groove-like slot is formed, an adjustment unit accommodated in a recessed groove installed on a leading end face continuing to an outer face opposite to an inner face or to the inner face in the head member to adjust the width of the slot by pressing a side wall face of the recessed groove, and a controller for controlling a pressing force to the side wall face of the recessed groove by the adjustment unit. The adjustment unit is provided with a fluid pressure chamber into which a fluid is sealed, a pressing portion for pressing the side wall face of the recessed groove by the fluid pressure of the fluid pressure chamber, and an operating portion for allowing the fluid pressure of the fluid pressure chamber to change. The controller is provided with a pressure detecting portion for detecting the fluid pressure of the fluid pressure chamber and an instruction portion for comparing the fluid pressure detected by the pressure detecting portion with a previously-set pressure range to give instructions to the operating portion. | 07-01-2010 |
20100319618 | DEVICE AND METHOD FOR PRETREATING EXTERIOR SURFACES OF AN AIRCRAFT TO BE PAINTED - A device for pretreating an exterior surface of an aircraft coated with an aircraft-specific base material so as to prepare the surface for a final painting with aircraft paint includes a pretreating tool. The pretreating tool has a laser head configured to activate the aircraft-specific base material using a laser. The device also includes a support construction including a robot device and a control unit configured to control and move the laser head over the surface using the robot device. | 12-23-2010 |
20100319619 | OXIDATION METHOD AND APPARATUS FOR SEMICONDUCTOR PROCESS - In an oxidation method for a semiconductor process, target substrates are placed at intervals in a vertical direction within a process field of a process container. An oxidizing gas and a deoxidizing gas are supplied to the process field from one side of the process field while gas is exhausted from the other side. One or both of the oxidizing gas and the deoxidizing gas are activated. The oxidizing gas and the deoxidizing gas are caused to react with each other, thereby generating oxygen radicals and hydroxyl group radicals within the process field. An oxidation process is performed on the surfaces of the target substrate by use of the oxygen radicals and the hydroxyl group radicals. | 12-23-2010 |
20110005459 | RESIST COATING APPARATUS - A resist coating apparatus supplies a resist solution to substantially the center of a target substrate to be processed while rotating the target substrate at a first rotational speed, then decelerates the rotation of the substrate to a second rotational speed lower than the first rotational speed, or until rotational halt, makes the deceleration smaller in the deceleration step as the rotational speed becomes closer to the second rotational speed or the rotational halt, and accelerates the rotation of the substrate to a third rotational speed higher than the second rotational speed to spin off a residue of the resist solution. | 01-13-2011 |
20110146572 | RESIST COATING METHOD AND RESIST COATING APPARATUS - A resist coating method supplies a resist solution to substantially the center of a target substrate to be processed while rotating the target substrate at a first rotational speed, then reduces a rotational speed of the target substrate to a second rotational speed lower than the first rotational speed, reduces the rotational speed of the target substrate to a third rotational speed lower than the second rotational speed or until rotational halt to adjust the film thickness of the resist solution, and accelerates the rotation of the target substrate to a fourth rotational speed higher than the third rotational speed to spin off a residue of the resist solution. | 06-23-2011 |
20120017830 | APPARATUS FOR EXECUTION OF TREATMENT OPERATIONS ON MICROSCOPE SLIDES WITH TISSUE SPECIMENS - An apparatus for automatic execution of different treatment operations in connection with staining of tissue specimens on microscope slides, wherein the apparatus ( | 01-26-2012 |
20120055401 | SUBSTRATE PROCESSING METHOD AND SYSTEM - A substrate processing method includes a first step of subjecting a target substrate to a gas process within an atmosphere containing a fluorine-containing process gas, thereby forming a fluorine-containing reaction product on a surface of the target substrate. The method further includes a second step of subjecting the target substrate treated by the gas process to a heating process and a gas process within an atmosphere containing a reactive gas that reacts with fluorine. | 03-08-2012 |
20130008378 | DEPOSITING CONFORMAL BORON NITRIDE FILMS - A method of forming a boron nitride or boron carbon nitride dielectric produces a conformal layer without loading effect. The dielectric layer is formed by chemical vapor deposition (CVD) of a boron-containing film on a substrate, at least a portion of the deposition being conducted without plasma, and then exposing the deposited boron-containing film to a plasma. The CVD component dominates the deposition process, producing a conformal film without loading effect. The dielectric is ashable, and can be removed with a hydrogen plasma without impacting surrounding materials. The dielectric has a much lower wet etch rate compared to other front end spacer or hard mask materials such as silicon oxide or silicon nitride, and has a relatively low dielectric constant, much lower then silicon nitride. | 01-10-2013 |
20130025537 | PROCESSING CONDITION INSPECTION AND OPTIMIZATION METHOD OF DAMAGE RECOVERY PROCESS, DAMAGE RECOVERING SYSTEM AND STORAGE MEDIUM - A processing condition inspection method of a damage recovery process for reforming a film having OH groups generated by damages from a predetermined process by using a processing gas includes preparing a substrate having an OH group containing resin film, measuring an initial film thickness of the OH group containing resin film, performing a damage recovery process on the substrate after measuring the initial film thickness, measuring a film thickness of the OH group containing resin film after the damage recovery process, calculating a film thickness difference of the OH group containing resin film before and after the damage recovery process, and determining whether processing conditions of the damage recovery process are appropriate or inappropriate based on the film thickness difference. | 01-31-2013 |
20130074769 | APPARATUS FOR THE DEPOSITION OF A CONFORMAL FILM ON A SUBSTRATE AND METHODS THEREFOR - A method for depositing a conformal film on a substrate in a plasma processing chamber of a plasma processing system, the substrate being disposed on a chuck, the chuck being coupled to a cooling apparatus, is disclosed. The method includes flowing a first gas mixture into the plasma processing chamber at a first pressure, wherein the first gas mixture includes at least carbon, and wherein the first gas mixture has a condensation temperature. The method also includes cooling the chuck below the condensation temperature using the cooling apparatus thereby allowing at least some of the first gas mixture to condense on a surface of the substrate. The method further includes venting the first gas mixture from the processing chamber; flowing a second gas mixture into the plasma processing chamber, the second gas mixture being different in composition from the first gas mixture; and striking a plasma to form the conformal film. | 03-28-2013 |
20130180450 | MULTIFUNCTIONAL MANUFACTURING PLATFORM AND METHOD OF USING THE SAME - A single, flexible, robust and low rate capable manufacturing platform that may be associated with caseless munitions firing circuits, nano and microelectromechanical (“NEMS” and “MEMS”) devices, and/or fractal antennas is described. The platform may be designed for extensive research and development in printed electronics, | 07-18-2013 |
20130239887 | COATING TREATMENT METHOD, COATING TREATMENT APPARATUS, AND COMPUTER-READABLE STORAGE MEDIUM - In a coating step, a substrate is rotated at a high speed, and in that state a resist solution is discharged from a first nozzle to a central portion of the substrate to apply the resist solution over the substrate. Subsequently, in a flattening step, the rotation of the substrate is decelerated and the substrate is rotated at a low speed to flatten the resist solution on the substrate. In this event, the discharge of the resist solution by the first nozzle in the coating step is performed until a middle of the flattening step, and when the discharge of the resist solution is finished in the flattening step, the first nozzle is moved to move a discharge position of the resist solution from the central portion of the substrate. According to the present invention, the resist solution can be applied uniformly within the substrate. | 09-19-2013 |
20130284089 | SYSTEM AND METHOD FOR RAPID FABRICATION OF ARBITRARY THREE-DIMENSIONAL OBJECTS - A three-dimensional object fabrication apparatus is disclosed. A housing encloses a work area having at least two distinct zones including a fabrication zone and an assembly zone. Digital data defining geometry for a three-dimensional object to be fabricated is passed via an interface to a processor within the housing. An efficient material supply mechanism sources the build material. | 10-31-2013 |
20130312662 | GRAPHENE PRODUCTION USING LASER HEATED CRYSTAL GROWTH - Implementations and techniques for producing graphene are generally disclosed. | 11-28-2013 |
20130319329 | PLASMA-ACTIVATED DEPOSITION OF CONFORMAL FILMS - Embodiments related to depositing thin conformal films using plasma-activated conformal film deposition (CFD) processes are described herein. In one example, a method of processing a substrate includes, applying photoresist to the substrate, exposing the photoresist to light via a stepper, patterning the resist with a pattern and transferring the pattern to the substrate, selectively removing photoresist from the substrate, placing the substrate into a process station, and, in the process station, in a first phase, generating radicals off of the substrate and adsorbing the radicals to the substrate to form active species, in a first purge phase, purging the process station, in a second phase, supplying a reactive plasma to the surface, the reactive plasma configured to react with the active species and generate the film, and in a second purge phase, purging the process station. | 12-05-2013 |
20140083359 | SCREEN PRINTING MACHINE - Disclosed is an inexpensive small-sized screen printing machine having low redundancy and high production efficiency and applicable to a dual conveying-type component mounting machine. The screen printing machine comprises a pair of substrate supporting tables provided to hold a respective substrate that is a print object and which is juxtaposed in a direction that is perpendicular to a conveying direction of the substrate, and a print executing section that performs a printing process alternately on the substrate held by the pair of substrate supporting tables. Due to the print executing section being driven in the direction under control of a control unit, a print position where the substrate supporting tables execute alternate printing is changed within a range in which one of the pair of substrate supporting tables and the other of the pair of substrate supporting tables oppose each other in the direction. | 03-27-2014 |
20140090594 | THIN FILM FORMING APPARATUS AND COMPUTER-READABLE MEDIUM - A control unit heats a reaction pipe to a load temperature by controlling a temperature-raising heater | 04-03-2014 |
20140123895 | PLASMA PROCESS APPARATUS AND PLASMA GENERATING DEVICE - A plasma process apparatus includes a vacuum chamber; a substrate holder configured to hold a substrate; a gas supplying part configured to supply a plasma generating gas into the vacuum chamber; an antenna configured to be supplied with a high-frequency power and generate an electromagnetic field for generating plasma of the plasma generating gas; a Faraday shield disposed between the antenna and an area where the plasma is generated and composed of a conductive plate where a plurality of slits, which extend in a direction that intersects with an extending direction in which the antenna extends and are arranged in the extending direction of the antenna, are formed to block an electric field in the electromagnetic field and to allow a magnetic field in the electromagnetic field to pass therethrough; and an adjusting part composed of a conductive material and configured to adjust an opening area of the slits. | 05-08-2014 |
20140144379 | SYSTEMS AND METHODS FOR PLASMA DOPING MICROFEATURE WORKPIECES - Systems and methods for plasma doping microfeature workpieces are disclosed herein. In one embodiment, a method of implanting boron ions into a region of a workpiece includes generating a plasma in a chamber, selectively applying a pulsed electrical potential to the workpiece with a duty cycle of between approximately 20 percent and approximately 50 percent, and implanting an ion specie into the region of the workpiece. | 05-29-2014 |
20140216336 | METAL AND SILICON CONTAINING CAPPING LAYERS FOR INTERCONNECTS - Disclosed methods cap exposed surfaces of copper lines with a layer of metal or metal-containing compound combined with silicon. In some cases, the metal or metal-containing compound forms an atomic layer. In certain embodiments, the methods involve exposing the copper surface first to a metal containing precursor to form an atomic layer of adsorbed precursor or metal atoms, which may optionally be converted to an oxide, nitride, carbide, or the like by, e.g., a pinning treatment. Subsequent exposure to a silicon-containing precursor may proceed with or without metallic atoms being converted. | 08-07-2014 |
20140238298 | MICROELECTRONIC WORKPIECE PROCESSING SYSTEMS AND ASSOCIATED METHODS OF COLOR CORRECTION - Several embodiments of semiconductor systems and associated methods of color corrections are disclosed herein. In one embodiment, a method for producing a light emitting diode (LED) includes forming an (LED) on a substrate, measuring a base emission characteristic of the formed LED, and selecting a phosphor based on the measured base emission characteristic of the formed LED such that a combined emission from the LED and the phosphor at least approximates white light. The method further includes introducing the selected phosphor onto the LED via, for example, inkjet printing. | 08-28-2014 |
20140318449 | DEFINED DOSING ATMOSPHERIC TEMPERATURE AND PRESSURE VAPOR DEPOSITION SYSTEM - A closed chemical introduction system used to deliver active ingredients in liquid chemical to a chemical vapor deposition system includes a robust, moisture-free cartridge containing a defined dose of liquid chemical. The cartridge is placed on a mounting slot specially configured to receive the cartridge. Upon initiating the system, a first linear mechanical actuator securely holds the cartridge in the slot, while an extraction lance attached to a second linear mechanical actuator punctures the cartridge from the bottom, extracts the liquid chemical and delivers it to a vaporization chamber. The vaporization chamber evaporates the liquid chemical and delivers the vapors containing the active ingredients to the chemical vapor deposition system. The chemical vapor deposition system may include a treatment chamber, a conveyor, a compressed clean air system to provide separate treatment compartments within the chamber, a moisture system, a chemical vapor system, and a neutralization system to neutralize harmful byproducts. | 10-30-2014 |
20140318450 | Method and System for Isolated and Discretized Process Sequence Integration - A system for processing a semiconductor substrate is provided. The system includes a mainframe having a plurality of modules attached thereto. The modules include processing modules, storage modules, and transport mechanisms. The processing modules may include combinatorial processing modules and conventional processing modules, such as surface preparation, thermal treatment, etch and deposition modules. In one embodiment, at least one of the modules stores multiple masks. The multiple masks enable in-situ variation of spatial location and geometry across a sequence of processes and/or multiple layers of a substrate to be processed in another one of the modules. A method for processing a substrate is also provided. | 10-30-2014 |
20140326179 | APPARATUS AND TECHNIQUES FOR CONTROLLING ION IMPLANTATION UNIFORMITY - A system to control an ion beam in an ion implanter includes a detector to perform a plurality of beam current measurements of the ion beam along a first direction perpendicular to a direction of propagation of the ion beam. The system also includes an analysis component to determine a beam current profile based upon the plurality of beam current measurements, the beam current profile comprising a variation of beam current along the first direction; and an adjustment component to adjust a height of the ion beam along the first direction when the beam current profile indicates the beam height is below a threshold. | 11-06-2014 |
20140326180 | METHODS AND APPARATUS FOR APPLYING CUSHION GUM TO A TIRE CASING - Methods, computer programs, and apparatus for applying a layer of cushion gum to a tire casing in preparation for the retreading of the tire casing, the steps of the methods including selecting one of a plurality recipes for applying cushion gum based on one of a size, model and shape of the tire casing; pressurizing the tire casing to a predetermined pressure based on the recipe; crushing the tire casing by an extruder head a predetermined percentage of the tire casing radius or a predetermined distance, the predetermined percentage based on the recipe; and extruding the cushion gum from the extruder head. The extruder head may be translatable by way of a screw drive. | 11-06-2014 |
20140331930 | METHODS AND SYSTEMS FOR ELECTRIC FIELD DEPOSITION OF NANOWIRES AND OTHER DEVICES - Methods, systems, and apparatuses for nanowire deposition are provided. A deposition system includes an enclosed flow channel, an inlet port, and an electrical signal source. The inlet port provides a suspension that includes nanowires into the channel. The electrical signal source is coupled to an electrode pair in the channel to generate an electric field to associate at least one nanowire from the suspension with the electrode pair. The deposition system may include various further features, including being configured to receive multiple solution types, having various electrode geometries, having a rotatable flow channel, having additional electrical conductors, and further aspects. | 11-13-2014 |
20150027368 | DRUG COATING APPARATUS - A drug coating apparatus ( | 01-29-2015 |
20150047562 | APPLICATION APPARATUS - An application apparatus includes a nozzle device ( | 02-19-2015 |
20150096494 | SUBSTRATE PROCESSING APPARATUS, METHOD OF CONTROLLING SUBSTRATE PROCESSING APPARATUS, METHOD OF MAINTAINING SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A substrate processing apparatus includes: an operation unit, which is provided with a storage unit that stores a plurality of recipes including a recipe for processing a member that constitutes the inside of a reactor in which substrate processing is performed, and a recipe for processing an exhaust pipe through which a gas released from the inside of the reactor flows, the operation unit further being provided with a display unit that displays a setting condition for executing the recipes on an operation screen; and a control unit that executes the recipe that meets the setting condition. The operation unit includes a recipe control unit, which controls, based on the setting condition, execution of the recipe for processing the member constituting the inside of the reactor in which the substrate processing is performed, and the recipe for processing the exhaust pipe, among the recipes stored in the storage unit. | 04-09-2015 |
20150107512 | PLURAL COMPONENT COATING APPLICATION SYSTEM WITH A COMPRESSED GAS FLUSHING SYSTEM AND SPRAY TIP FLIP MECHANISM - A system for coating a non-rotating pipe work piece including: valves, flow lines, and a mixing block for receiving a first and a second component material each delivered at a pressure, flow measurement devices to measure the flows of the components, a static mixer in fluid communication with the mixing block for receiving the combined components, a C-shaped plate member arranged around the work piece, a drive mechanism to oscillate a partial rotation of the C-shaped member about the work piece with the rate of oscillations controlled by a logic controller, at least two spray guns disposed on the C-shaped member to spray towards the outside surface of the work piece, a drive mechanism to traverse the at least two spray guns longitudinally with the rate of traverse controlled by a logic controller; and the logic controller(s) programmed to control based on a number of input and measured parameters. | 04-23-2015 |
20150337435 | FABRICATION OF INTEGRATED COMPUTATIONAL ELEMENTS USING SUBSTRATE SUPPORT SHAPED TO MATCH SPATIAL PROFILE OF DEPOSITION PLUME - A system includes a computational system to receive a design of an integrated computational element (ICE) including specification of a substrate and a plurality of layers, their respective target thicknesses and complex indices, such that a notional ICE fabricated based on the ICE design is related to a characteristic of a sample. Additionally, the system includes a deposition chamber including a deposition source to provide a deposition plume having a plume spatial profile, and a support to support a plurality of instances of the substrate during fabrication of a plurality of instances of the ICE. The support is spaced apart from the deposition source and has a shape that corresponds to the plume spatial profile, such that when the supported instances of the substrate are distributed over the support, thicknesses of instances of each of the deposited layers are substantially uniform across the plurality of instances of the ICE. | 11-26-2015 |
20150367375 | MATERIAL DEPOSITION SYSTEMS WITH FOUR OR MORE AXES - A system for fabricating an object includes an extruder for one or more deposition materials having at least one nozzle and a movable support for the nozzle. The nozzle has a nozzle axis and is rotatably attached to the movable support via a connector that is actuatable relative to the movable support to change an angular orientation of the nozzle axis, thus varying an angle between the nozzle axis and a deposition surface. The system also includes a controller that can apply a correction factor calculated for a path of the nozzle when an acute angle is formed between the nozzle axis and the deposition surface, the correction factor for moving toward the acute angle being different from that when moving away from it. The correction factor removes differences in thickness of the deposited material caused by variations in the angle formed between the nozzle axis and the deposition surface. | 12-24-2015 |
20150368111 | METHOD AND SYSTEM FOR GRAPHENE FORMATION - A system for graphene production includes a plurality of gas sources, a plurality of mass flow controllers, and a processing chamber. The system also includes a plasma source operable, a vacuum pump, a processor, and a non-transitory computer-readable storage medium including a plurality of computer-readable instructions. The plurality of instructions include instructions that cause the data processor to subject a substrate to a reduced pressure environment, to provide a carrier gas and a carbon source, and to expose at least a portion of the substrate to the carrier gas and the carbon source. The plurality of instructions also include instructions that cause the data processor to perform a surface treatment process on the at least a portion of the substrate and to convert a portion of the carbon source to graphene disposed on the at least a portion of the substrate. | 12-24-2015 |
20160002768 | DYEING DEVICE - A dyeing device dyes a resin body by vaporizing and depositing a sublimation dye adhered to a dyeing base to a resin body and fixing the dye to the resin body. The dyeing device lowers the pressure inside a closed chamber that closes the periphery of the resin body by a pump. In the state where the adhesion surface of the dyeing base to which the dye is adhered faces the resin body without contact, by heating the dye adhered to the dyeing base inside the closed chamber of which the pressure is lowered, the dye is sublimated, vaporized, and deposited on the resin body. The pressure inside the closed chamber is raised higher than the pressure at the vaporizing and depositing time. By irradiating the resin body on which the dye is vaporized and deposited with electromagnetic wave, the resin body is heated and the dye is and fixed. | 01-07-2016 |
20160026082 | CLEANING DEVICE AND LINEAR COATING MACHINE - A cleaning device ( | 01-28-2016 |
20160047039 | PROCESSING APPARATUS - A processing apparatus includes a plurality of first gas supply channels configured to supply a plurality of gases to the process chamber, a second gas supply channel configured to supply a gas to the process chamber, the gas being used in processing the target substrate, a plurality of first valves configured to open and close the plurality of first gas supply channels, a second valve configured to open and close the second gas supply channel, and a controller. One of the plurality of first valves is a follow-up target valve. The controller controls opening/closing operation of the plurality of first valves such that opening durations of the plurality of first valves do not overlap with each other, and controls opening/closing operation of the second valve such that opening duration of the second valve has a predetermined time relationship with opening duration of the follow-up target valve. | 02-18-2016 |
20160068961 | Method and Apparatus For Growing Binary, Ternary and Quaternary Materials on a Substrate - Methods and systems for forming a material on a substrate are provided. Aspects of the methods involve the controlled introduction of a plurality of vapor reactants into a deposition chamber to form a material on the substrate having uniform surface roughness, conformality, thickness and composition. Aspects of the systems include a vapor feed component, a vapor distribution component, a containment component, and a controller configured to operate the systems to carry out the methods. | 03-10-2016 |
20160068962 | Devices Including Metal-Silicon Contacts Using Indium Arsenide Films And Apparatus And Methods - Described are apparatus and methods for forming films comprise indium and arsenic. In particular, these films may be formed in a configuration of two or more chambers under “load lock” conditions. These films may include additional components as dopants, such as aluminum and/or gallium. Such films can be used in metal/silicon contacts having low contact resistances. Also disclosed are devices including the films comprising indium arsenide. | 03-10-2016 |
20160090649 | METHOD TO OBTAIN SiC CLASS OF FILMS OF DESIRED COMPOSITION AND FILM PROPERTIES - Provided are methods and systems for providing silicon carbide class of films. The composition of the silicon carbide film can be controlled by the choice of the combination of precursors and the ratio of flow rates between the precursors. The silicon carbide films can be deposited on a substrate by flowing two different organo-silicon precursors to mix together in a reaction chamber. The organo-silicon precursors react with one or more radicals in a substantially low energy state to form the silicon carbide film. The one or more radicals can be formed in a remote plasma source. | 03-31-2016 |
20160122946 | MEASUREMENT OF WEB - An apparatus including a caliper measuring sensor arrangement, a mass measuring sensor arrangement, and a stabilizing arrangement. The caliper measuring sensor arrangement measures caliper of the web. The mass measuring sensor arrangement measures at least one of the following: a basis weight of the web, a moisture content, a water weight, dry weight of the web. The stabilizing arrangement stabilizes the web. The stabilizing arrangement including at least a part of the mass measuring sensor arrangement. | 05-05-2016 |
20160144457 | COLOUR MARKING METAL SURFACES - Apparatus related to marking a metal surface are provided. The solution includes a bed for an object including a metal surface, the bed including a total marking area; a cover forming an airtight space over the bed; one or more laser marking units capable of directing a laser beam onto the metal surface located within a unit marking area, wherein the unit marking area is smaller than the total marking area. In the proposed solution control data including information on the marking of a pattern on the metal surface is received; the focus, bandwidth and movement of the one or more laser marking units is controlled on the basis of the control data to produce the pattern defined in the control data on the metal surface. | 05-26-2016 |
20160189993 | SUBSTRATE PROCESSING APPARATUS, GAS-PURGING METHOD, METHOD FOR MANUFACURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM CONTAINING ABNORMALITY-PROCESSING PROGRAM - A substrate processing apparatus includes a process chamber configured to process a substrate, a carrier mounting part configured to mount a carrier which accommodates the substrate, the substrate capable of being brought into and out of the carrier when a door of the carrier mounted on the carrier mounting part is opened, a carrier opener configured to open and close the door of the carrier mounted on the carrier mounting part, a purge gas supply part configured to supply an inert gas into the carrier with the door kept opened, and a control part configured to perform control so as to carry out at least one inert gas purge among a load purge, an unload purge and a standby purge. | 06-30-2016 |
20160376699 | SUBSTRATE PROCESSING APPARATUS, AND STORAGE MEDIUM - A substrate processing apparatus includes a gas supply part configured to supply at least one of a film-forming gas, a first inert gas, and a second inert gas supplied at a temperature higher than that of the first inert gas into a process chamber in which a substrate is processed; and a control part configured to control the gas supply part to perform a film-forming process of supplying the film-forming gas and the first inert gas from the gas supply part into the process chamber to process the substrate, and to control a deposited film removing process of directly supplying the second inert gas having a temperature higher than that of the first inert gas from the gas supply part to the process chamber, in a state where there is no substrate in the process chamber, to remove a deposited film deposited within the process chamber. | 12-29-2016 |
20170233300 | Additive Manufacturing of Polymer Derived Ceramics | 08-17-2017 |