| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 118666000 | Temperature responsive | 34 |
| 20080282975 | Gas Feed Installation for Machines Depositing a Barrier Layer on Containers - The present invention relates to a gas feed installation for depositing barrier layers in a container. According to the invention, a balancing step is carried out using a start-up feed device ( | 11-20-2008 |
| 20090071401 | Method and apparatus for recycling inert gas - A method for recycling an inert gas evacuated from a material deposition process chamber | 03-19-2009 |
| 20090071402 | Metal film vapor phase deposition method and vapor phase deposition apparatus - A copper film vapor phase deposition method includes the steps of exposing high-purity copper to a plasma of a gas containing chlorine gas to etch the high-purity copper, thereby generating active Cu | 03-19-2009 |
| 20090159000 | REDUNDANT TEMPERATURE SENSOR FOR SEMICONDUCTOR PROCESSING CHAMBERS - Systems are provided for measuring temperature in a semiconductor processing chamber. Embodiments provide a multi-junction thermocouple comprising a first junction and a second junction positioned to measure temperature at substantially the same portion of a substrate. A controller may detect failures in the first junction, the second junction, a first wire pair extending from the first junction, or a second wire pair extending from the second junction. The controller desirably responds to a detected failure of the first junction or first wire pair by selecting the second junction and second wire pair. Conversely, the controller desirably responds to a detected failure of the second junction or second wire pair by selecting the first junction and first wire pair. Systems taught herein may permit accurate and substantially uninterrupted temperature measurement despite failure of a junction or wire pair in a thermocouple. | 06-25-2009 |
| 20090260568 | GLUE DISPENSER AND GLUE DISPENSING PROCESS - An exemplary glue dispenser for dispensing a glue on a workpiece includes a nozzle for dispensing the glue on the workpiece, a working platform for supporting a workpiece thereon, and a heating device mounted on the working platform. The heating device is configured for maintaining the workpiece in an elevated temperature, which is higher than a temperature of the glue. | 10-22-2009 |
| 20090277382 | SEMICONDUCTOR MANUFACTURING APPARATUS - Provided is a semiconductor manufacturing apparatus, which is capable of realizing fine-pitch patterns and thus improving stabilization of patterning precision. The semiconductor manufacturing apparatus comprises: a photoresist processing unit for forming a photoresist pattern in a predetermined region on a substrate to which a predetermined process is applied; and a substrate processing unit for forming a thin film on the surface of at least the photoresist pattern. | 11-12-2009 |
| 20100012026 | EVAPORATION SUPPLY APPARATUS FOR RAW MATERIAL AND AUTOMATIC PRESSURE REGULATING DEVICE USED THEREWITH - An evaporation supply apparatus for raw material used in semiconductor manufacturing includes a source tank in which a raw material is pooled; a flow rate control device that supplies carrier gas at a regulated flow rate into the source tank; a primary piping path for feeding mixed gas G | 01-21-2010 |
| 20100170435 | DEVICE FOR THE TEMPERATURE CONTROL OF THE SURFACE TEMPERATURES OF SUBSTRATES IN A CVD REACTOR - The invention relates to a CVD reactor having a plurality of rotary tables ( | 07-08-2010 |
| 20100282163 | THERMOCOUPLE ASSEMBLY WITH GUARDED THERMOCOUPLE JUNCTION - An improved thermocouple assembly for providing a temperature measurement is provided. The thermocouple assembly includes a sheath having a measuring tip, a support member received within the sheath, and first and second wires disposed within the support member. An end of each of the first and second wires are fused together to form a thermocouple junction therebetween. A recessed region is formed in a distal end of the support member, and the thermocouple junction is fixedly located at the base of the recessed region such that the recessed region maintains the thermocouple junction in a substantially fixed position relative to the measuring tip of the sheath. | 11-11-2010 |
| 20110023778 | Method and Apparatus for Improving the Efficiency of Purification and Deposition of Polycrystalline Silicon - Methods and apparatus for the commercial-scale production of purified polycrystalline silicon granules with one or more tailored levels of n- and p-type impurities from an impure silicon source such as, for example, metallurgical-grade silicon. Purification systems and methods involve: (1) one or more series of temperature controlled reactors or vessels provided with dual fluidized beds wherein solids and gases are transported so that varying degrees of purification and deposition of solid silicon is accomplished by strict control of temperature and residence time; (2) separation and recovery of the compounds of high-melting-point impurities such as, for example, FeSi and FeI | 02-03-2011 |
| 20110030614 | WET COATING SYSTEM HAVING ANNEALING CHAMBER - An exemplary wet coating system includes a coating chamber, an annealing chamber, an unloading chamber, and a mechanical arm. The coating chamber is configured for allowing a substrate being wet coated therein. The unloading chamber is configured for allowing the substrate being unloaded therein. The annealing chamber is interposed between and communicated with the coating chamber and the unloading chamber and is configured for allowing the substrate being annealed therein. The communicated coating chamber, annealing chamber, and unloading chamber are vacuumized. The mechanical arm is configured for holding the substrate and moving the substrate across the coating chamber, the annealing chamber, and the unloading chamber. | 02-10-2011 |
| 20110030615 | METHOD AND APPARATUS FOR DRY CLEANING A COOLED SHOWERHEAD - The present invention generally provides a method and apparatus for cleaning a showerhead of a deposition chamber, such as a metal organic chemical vapor deposition (MOCVD) chamber. In one embodiment, the showerhead is cleaned without exposing the chamber to the atmosphere outside of the chamber (i.e., in situ cleaning). In one embodiment, flow of liquid coolant through a cooling system that is in fluid communication with the showerhead is redirected to bypass the showerhead, and the liquid coolant is drained from the showerhead. In one embodiment, any remaining coolant is flushed from the showerhead via a pressurized gas source. In one embodiment, the showerhead is then heated to an appropriate cleaning temperature. In one embodiment, the flow of liquid coolant from the cooling system is then redirected to the showerhead and the system is adjusted for continued processing. Thus, the entire showerhead cleaning process is performed with minimal change to the flow of coolant through the cooling system. | 02-10-2011 |
| 20110139070 | SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A stable and highly reliable device for detecting damage or contact failures of respective parts is provided. The device includes a processing chamber for processing a substrate; a heater for heating the substrate; a substrate support accommodating the heater and installed inside the processing chamber; a shaft for supporting the substrate support; a wire inserted through the shaft; a supporting unit for holding the wire; and a temperature detector connected to the supporting unit. | 06-16-2011 |
| 20110185969 | DUAL HEATING FOR PRECISE WAFER TEMPERATURE CONTROL - An improved method of heating a workpiece positioned on a susceptor is disclosed. The method using both primary heating, such as by resistive or inductive heating elements, and localized secondary heating, such as by heating lamps. The primary heating system is used to globally regulate the temperature of the susceptor. The heating lamps are used to provide localized heating to particular regions of the workpieces, based on measured temperatures. A wafer temperature mapping unit is used to measure the temperature of the top surface of the workpieces, so that an appropriate amount of heat can be applied to each localized region. In some embodiments, the susceptor rotates, thereby allowing fewer localized heating elements and temperature sensors to be employed. | 08-04-2011 |
| 20110253044 | SHOWERHEAD ASSEMBLY WITH METROLOGY PORT PURGE - A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, the apparatus is a processing chamber that includes a showerhead with separate inlets and channels for delivering separate processing gases into a processing volume of the chamber without mixing the gases prior to entering the processing volume. In one embodiment, the showerhead includes metrology ports with purge gas assemblies configured and positioned to deliver a purge gas to prevent deposition thereon. In one embodiment, the metrology port is configured to receive a temperature measurement device, and the purge gas assembly is a concentric tube configuration configured to prevent deposition on components of the temperature measurement device. In one embodiment, the metrology port has a sensor window and is configured to receive an optical measurement device, and the purge gas assembly and sensor window are configured to prevent deposition on the sensor window. | 10-20-2011 |
| 20110297083 | Laser cladding of tubes - The present invention relates to an apparatus for laser cladding of a curved surface comprising: (a) an elongated arm having first and second ends and defining a chamber through the arm from the first end to the second end; (b) a laser delivery source connected to a focusing lens mounted in a housing within an opening on the first end of the arm for delivering a laser beam through the chamber; (c) a delivery head mounted on the second end of the arm comprised of (i) an enclosure having an inlet for receiving the laser and an outlet for delivering the laser to the curved surface, (ii) a powder nozzle for delivering a cladding powder to an inner surface of the curved surface, and (iii) a reflective surface for reflecting the laser to exit through the outlet; (d) mounting means for rotating the curved surface for the cladding of the curved surface; and (e) indexing means for moving the arm substantially parallel to a longitudinal axis of the curved surface so as to clad the curved surface during the rotation of the curved surface. Typically, the curved surface is part of the inner surface of a tube used in industrial applications. | 12-08-2011 |
| 20110303145 | Apparatus for chemical vapor deposition control - A gas heating device and a processing system for use therein are described for depositing a thin film on a substrate using a vapor deposition process. The gas heating device includes a heating element array having a plurality of heating element zones configured to receive a flow of a film forming composition across or through said plurality of heating element zones in order to cause pyrolysis of one or more constituents of the film forming composition when heated. Additionally, the processing system may include a substrate holder configured to support a substrate. The substrate holder may include a backside gas supply system configured to supply a heat transfer gas to a backside of said substrate, wherein the backside gas supply system is configured to independently supply the heat transfer gas to multiple zones at the backside of the substrate. | 12-15-2011 |
| 20120227665 | APPARATUS FOR MONITORING AND CONTROLLING SUBSTRATE TEMPERATURE - A system and methods for heating substrates during high temperature processing is provided. The system uses multiple temperature inputs of the backside of a substrate carrier and known parameters within the processing chamber to estimate the temperature of substrates being processed on the substrate carrier. Temperature readings of the substrate carrier taken from above the processing volume may be used to correct any drift that may occur with respect to temperature readings taken from below the substrate carrier. Temperature readings of heat exchanging fluid flowing through a showerhead assembly may be used to estimate the temperature of the surface of the showerhead, which may be used in the estimation of the temperature of the substrates being processed. The system then uses the estimated temperature to control the amount of power supplied to a plurality of heat sources configured to heat the substrates from below the substrate carrier. | 09-13-2012 |
| 20120240852 | SYSTEM FOR SPRAYING METAL PARTICULATE - A system for applying a metal particulate onto an object is disclosed herein. The system can include sources for a metal particulate and a hot pressurized air in communication with a spraying device having a nozzle assembly configured to: receive, mix, and expel the metal particulate and the hot pressurized air. The hot pressurized air can form a venturi effect within the nozzle assembly to draw in the metal particulate. The nozzle assembly can include a nozzle cap with a tapered nozzle having a helical channel, and an outer tip connected to the nozzle cap having a venturi effect chamber, a mixing conduit, and rifling. The helical channel can form a vortex flow of the metal particulate, and the mixing conduit can form a vortex flow of the air metal mixture. A nozzle orifice can expel the air metal mixture to onto the object to form a coating thereon. | 09-27-2012 |
| 20120325145 | BATCH TYPE PROCESSING APPARATUS - A batch type processing apparatus for simultaneously processing a plurality of target objects to be processed, includes a main chamber; a plurality of stages, arranged in the main chamber in a height direction of the main chamber, for mounting thereon the target objects; and a plurality of covers, provided to the stages, for covering the target objects mounted on the stages. The stages and the covers surround the target objects mounted on the stages, thereby forming small processing spaces each of which has a capacity smaller than a capacity of the main chamber. | 12-27-2012 |
| 20130068159 | Manufacturing Method of Semiconductor Device and Substrate Processing Apparatus - A substrate processing apparatus includes a processing chamber that forms a thin film on a main surface of a plurality of substrates and a heater provided outside of the processing chamber, for heating an inside of the processing chamber. The substrate processing apparatus also includes a first gas supply part configured to supply a first processing gas, a second gas supply part configured to supply the first processing gas to a middle part of a gas flow, a third gas supply part configured to supply a second processing gas, an exhaust part and a controller that causes the first processing gas and the second processing gas to react with each other in the processing chamber to form an amorphous material, and form a thin film of the plurality of substrates. | 03-21-2013 |
| 20130192522 | THERMAL DIFFUSION CHAMBER WITH CONVECTION COMPRESSOR - Preferably, a frame supporting a containment chamber, with a sealed process chamber confined within the containment chamber, and at least one fluid inlet structure in fluidic communication with an exterior of the sealed process chamber, the fluid inlet structure including at least a flow adjustment structure to control a fluid flow from a fluid source around the exterior of the sealed process chamber; and an open loop fluid convection system in fluidic communication with an interior of the sealed process chamber, wherein the fluid convection system includes a rotary compressor assembly that extends into the sealed process chamber is disclosed. | 08-01-2013 |
| 20160032457 | ATOMIC LAYER DEPOSITION PROCESSING APPARATUS TO REDUCE HEAT ENERGY CONDUCTION - Embodiments of the invention relate to apparatuses and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a substrate processing apparatus comprises a chamber lid assembly including a first heating member, a susceptor positioned proximal to the chamber lid assembly, wherein the susceptor includes a second heating member for heating the substrate, a process chamber accommodating at least the chamber lid assembly and the susceptor and a controller configured to control the first heating member so as to refrain the conduction of heat energy generated by the second heating member from the susceptor to the chamber lid assembly. | 02-04-2016 |
| 20160201196 | SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | 07-14-2016 |
| 118667000 | Of coating material or applicator | 10 |
| 20090183677 | TEMPERATURE CONTROL DEVICE AND PROCESSING APPARATUS USING THE SAME - Provided are a temperature control device capable of performing a temperature control of, e.g., a chamber wall of a processing apparatus with a high precision; and a processing apparatus using the same. The temperature control device | 07-23-2009 |
| 20090255465 | THERMAL CONTROL OF DEPOSITION IN DIP PEN NANOLITHOGRAPHY - The present invention describes an apparatus for nanolithography and a process for thermally controlling the deposition of a solid organic “ink” from the tip of an atomic force microscope to a substrate. The invention may be used to turn deposition of the ink to the substrate on or off by either raising its temperature above or lowing its temperature below the ink's melting temperature. This process may be useful as it allows ink deposition to be turned on and off and the deposition rate to change without the tip breaking contact with the substrate. The same tip can then be used for imaging purposes without fear of contamination. This invention can allow ink to be deposited in a vacuum enclosure, and can also allow for greater spatial resolution as the inks used have lower surface mobilities once cooled than those used in other nanolithography methods. | 10-15-2009 |
| 20090277383 | ADHESIVE DISPENSER WITH TEMPERATURE CONTROLLER - An exemplary adhesive dispenser includes a container configured for supplying an adhesive, a plurality of nozzles configured for dispensing the adhesive, and a temperature controller connected between the container and the nozzles. The temperature controller has a chamber defined therein, and the chamber is configured for accommodating the adhesive. The container and each nozzle communicate with the chamber respectively. The temperature controller is configured for maintaining the adhesive therein in a predetermined temperature. | 11-12-2009 |
| 20090293807 | Apparatus for filtration and gas-vapor mixing in thin film deposition - An apparatus removes particles from a gas/vapor mixture while at the same time improves the uniformity of gas/vapor mixture to create a more uniformly-mixed mixture stream for thin film deposition and semiconductor device fabrication. | 12-03-2009 |
| 20100107977 | FILM FORMING APPARATUS - A film-forming apparatus of the invention is a film-forming apparatus that includes: a processing container that defines a chamber, a pedestal arranged in the chamber, on which a substrate to be processed can be placed, a showerhead provided opposite to the pedestal, which has a large number of gas-discharging holes, a gas-supplying mechanism that supplies a process gas into the chamber through the showerhead, and a showerhead-temperature controlling unit that controls a temperature of the showerhead. | 05-06-2010 |
| 20100126417 | DEPOSITION SOURCE UNIT, DEPOSITION APPARATUS AND TEMPERATURE CONTROLLER OF DEPOSITION SOURCE UNIT - A deposition apparatus includes a deposition source unit, a transport mechanism for transporting a vaporized film forming material and a blowing device for blowing off the transported film forming material. The deposition source unit includes a vapor deposition source assembly, a housing and a water cooling jacket. The vapor deposition source assembly includes a gas supply mechanism, a gas inlet and a first material evaporating chamber formed as one body. A heater of the housing heats a film forming material in the first material evaporating chamber and the carrier gas flowing in a plurality of gas passages. The vaporized film forming material is transported by an argon gas. The water cooling jacket is installed apart from an outer peripheral surface of the housing at a certain distance and cools the deposition source unit. | 05-27-2010 |
| 20110023779 | Variable Volume Plasma Processing Chamber and Associated Methods - A plasma processing chamber includes a substrate support having a top surface defined to support a substrate in a substantially horizontal orientation within the chamber. The plasma processing chamber also includes a number of telescopic members disposed within the chamber outside a periphery of the substrate support. The number of telescopic members are also disposed in a concentric manner with regard to a center of the top surface of the substrate support. Each of the number of telescopic members is defined to be independently moved in a substantially vertical direction so as to enable adjustment of an open volume above the top surface of the substrate support, and thereby enable adjustment of a plasma condition within the open volume above the top surface of the substrate support. | 02-03-2011 |
| 20110120370 | THIN-FILM SOLAR CELL MANUFACTURING APPARATUS - A thin-film solar cell manufacturing apparatus includes a film forming chamber which stores a substrate; and an electrode unit which performs film formation using a CVD method on the substrate in the film forming chamber. The electrode unit has an anode and a cathode; and a side wall portion which holds the anode and the cathode and forms a part of a wall portion of the film forming chamber, and is attachable to and detachable from the film forming chamber. | 05-26-2011 |
| 20110146571 | TEMPERATURE CONTROLLED SHOWERHEAD FOR HIGH TEMPERATURE OPERATIONS - A temperature controlled showerhead assembly for chemical vapor deposition (CVD) chambers enhances heat dissipation to provide accurate temperature control of the showerhead face plate and maintain temperatures substantially lower than surrounding components. Heat dissipates by conduction through a showerhead stem and removed by the heat exchanger mounted outside of the vacuum environment. Heat is supplied by a heating element inserted into the steam of the showerhead. Temperature is controlled using feedback supplied by a temperature sensor installed in the stem and in thermal contact with the face plate. | 06-23-2011 |
| 20110283939 | NON-INTRUSIVE, LOW CHATTER PRESSURE RELIEF VALVE SYSTEM - A pressure relief system and a non-intrusive, low chatter pressure relief valve for use with such as system are disclosed. The pressure relief valve allows excess pressure in a pressurized fluid line to flow through a flow return line to a fluid reservoir when the fluid pressure exceeds the valve's pressure limit setting. The establishment of a uniform channel between the valve stem and the inner surface of a housing in which the valve stem is slidably located, as well as the use of a vent and sight tube to remove air from the top portion of the housing upon a spring being compressed during the opening of the valve, reduces the occurrence of pulsation and vibration when the valve is cycled between its open and closed positions. When the valve is in its closed position, the bottom end of the valve stem is in close proximity to the inner surface of the main fluid passageway in the pressurized fluid line, but does not intrusively interfere with the flow of fluid through the main fluid passageway. | 11-24-2011 |
