| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 073777000 | Semiconductor | 43 |
| 20080216583 | Detection of Resonator Motion Using Piezoresistive Signal Downmixing - A system containing a micro-mechanical or nano-mechanical device and a method of operating the same is provided. The device includes a resonator and a piezoresistive element connected to the resonator. The method includes AC biasing the piezoresistive element at a first frequency, driving the resonator at a second frequency different from the first frequency, and detecting a mechanical response of the resonator at one or both of a difference frequency and a sum frequency of the first and second frequencies. | 09-11-2008 |
| 20080229842 | SUSPENSION EQUIPPED WITH VIBRATION SENSOR AND MANUFACTURING METHOD THEREOF - A suspension for a hard disk drive has a vibration sensor which is impervious to influence by external noise, to obtain more stable positioning precision of the head on the suspension. The suspension has a load beam, a vibration sensor sandwiched by a first electrode and a second electrode, and a conductive wiring pattern on the load beam for electrically connecting the first electrode and the second electrode to an external detection circuit. The first electrode is sandwiched by the second electrode via the vibration sensor and a shield layer via an insulating layer. The second electrode and the shield layer are at a same potential. | 09-25-2008 |
| 20080289432 | APPARATUS FOR MEASURING A MECHANICAL QUANTITY - A mechanical quantity measuring apparatus is provided which can make highly precise measurements and is not easily affected by noise even when it is supplied an electricity through electromagnetic induction or microwaves. At least a strain sensor and an amplifier, an analog/digital converter, a rectification/detection/modulation-demodulation circuit, and a communication control circuit are formed in one and the same silicon substrate. Or, the silicon substrate is also formed at its surface with a dummy resistor which has its longitudinal direction set in a particular crystal orientation and which, together with the strain sensor, forms a Wheatstone bridge. With this arrangement, even when a current flowing through the sensor is reduced, measured data is prevented from being buried in noise, allowing the sensor to operate on a small power and to measure a mechanical quantity with high precision even when it is supplied electricity through electromagnetic induction or microwaves. | 11-27-2008 |
| 20080295605 | STRESS DETECTION CIRCUIT AND SEMICONDUCTOR CHIP INCLUDING SAME - A stress detection circuit includes a function block and a detection signal generation circuit. The function block outputs a first voltage such that the first voltage is varied depending on an extent that the function block is stressed. The detection signal generation circuit generates a stress detection signal based on the first voltage and a second voltage during a test mode. The stress detection signal represents integration of the function block, and a level of the second voltage corresponds to a level of the first voltage before the function block is stressed. | 12-04-2008 |
| 20090007686 | Apparatus for Measuring a Mechanical Quantity - An apparatus structure and measurement method are provided to retain high precision and high reliability of a semiconductor mechanical quantity measuring apparatus which senses a mechanical quantity and transmits measured information wirelessly. As to a silicon substrate of the semiconductor mechanical quantity measuring apparatus, for example, a ratio of a substrate thickness to a substrate length along a measurement direction is set small, and a ratio of a substrate thickness to a substrate length along a direction perpendicular to the measurement direction is set small. The apparatus upper surface is covered with a protective member. It is possible to measure a strain along a particular direction and realize mechanical quantity measurement with less error and high precision. An impact resistance and environment resistance of the apparatus itself can be improved. | 01-08-2009 |
| 20090031819 | Load Sensor - The invention provides a load sensor which is driven by a low electric power consumption, can measure at a high precision, and has a high reliability without being broken. The load sensor is structured such that a detection rod for detecting a strain is provided in an inner portion of a hole formed near a center of a pin via a shock relaxation material and a semiconductor strain sensor is provided in the detection rod, in a load sensor detecting a load applied to the pin from a strain generated in an inner portion of the pin. | 02-05-2009 |
| 20090038404 | METALLIC THIN FILM PIEZORESISTIVE TRANSDUCTION IN MICROMECHANICAL AND NANOMECHANICAL DEVICES AND ITS APPLICATION IN SELF-SENSING SPM PROBES - Thin metallic films are used as the piezoresistive self-sensing element in microelectromechanical and nanoelectromechanical systems. The specific application to AFM probes is demonstrated. | 02-12-2009 |
| 20090064791 | STRESS-DISTRIBUTION DETECTING SEMICONDUCTOR PACKAGE GROUP AND DETECTION METHOD OF STRESS DISTRIBUTION IN SEMICONDUCTOR PACKAGE USING THE SAME - A disclosed stress-distribution detecting semiconductor package group includes multiple stress-distribution detecting semiconductor packages each formed by resin-encapsulating a stress detecting semiconductor chip of the same size using an identical resin encapsulation structure. Each stress detecting semiconductor chip includes a piezoelectric element for stress detection and at least two electrode pads electrically connected to the piezoelectric element to measure an electrical property of the piezoelectric element. The piezoelectric elements of the stress detecting semiconductor chips are respectively disposed on the corresponding stress detecting semiconductor chips to be located at different positions from one another when superimposed on a single imaginary semiconductor chip plane having the same plane size as that of the stress detecting semiconductor chips. | 03-12-2009 |
| 20090173162 | High temperature strain gages - A ceramic strain gage based on reactively sputtered indium-tin-oxide (ITO) thin films is used to monitor the structural integrity of components employed in aerospace propulsion systems operating at temperatures in excess of 1500° C. A scanning electron microscopy (SEM) of the thick ITO sensors reveals a partially sintered microstructure comprising a contiguous network of submicron ITO particles with well defined necks and isolated nanoporosity. Densification of the ITO particles was retarded during high temperature exposure with nitrogen thus stabilizing the nanoporosity. ITO strain sensors were prepared by reactive sputtering in various nitrogen/oxygen/argon partial pressures to incorporate more nitrogen into the films. Under these conditions, sintering and densification of the ITO particles containing these nitrogen rich grain boundaries was retarded and a contiguous network of nano-sized ITO particles was established. | 07-09-2009 |
| 20090199650 | MECHANICAL QUANTITY MEASURING APPARATUS - It is an object to prevent breakage of a mechanical quantity measuring apparatus made of a monocrystalline silicon substrate due to a large distortion. A mounting board for measuring distortion is provided on a rear surface of a sensor chip made of a semiconductor monocrystalline substrate having a distortion detecting unit. Even when a large distortion occurs in an object to be measured, a distortion occurring in the semiconductor monocrystalline substrate can be controlled by the mounting board. Therefore, the semiconductor monocrystalline substrate is not broken, and a highly reliable mechanical quantity measuring apparatus can be provided. | 08-13-2009 |
| 20090205436 | WIRELESS SENSOR PLATFORM FOR HARSH ENVIRONMENTS - An amplifier system can include an input amplifier configured to receive an analog input signal and provide an amplified signal corresponding to the analog input signal. A tracking loop is configured to employ delta modulation for tracking the amplified signal, the tracking loop providing a corresponding output signal. A biasing circuit is configured to adjust a bias current to maintain stable transconductance over temperature variations, the biasing circuit providing at least one bias signal for biasing at least one of the input amplifier and the tracking loop, whereby the circuitry receiving the at least one bias signal exhibits stable performance over the temperature variations. In another embodiment the biasing circuit can be utilized in other applications. | 08-20-2009 |
| 20090241681 | HYDROGEL-BASED MEMS BIOSENSOR - A biosensor using a stress sensor, such as a FET device or a piezoresistive device, embedded in a MEMS structure and coated with hydrogel is provided. The MEMS structure comprises any structure with a flexible portion and may include a cantilever, beam, or plate. When the hydrogel swells due to the presence of an analyte, the hydrogel imparts stress on the MEMS structure which is then detected by the embedded stress sensor. A passivation layer may be included in between the MEMS structure and the hydrogel. The MEMS structure may further be coated with a second hydrogel. | 10-01-2009 |
| 20090293632 | DEFLECTABLE MICROMECHANICAL SYSTEM AND USE THEREOF - The invention relates to deflectable micromechanical systems as well as their use in which the deflection of at least one deflectable element can be determined. In accordance with the invention, a deflectable element is held with at least one spring element and at least one unit detecting the deflection is present. It is formed as a piezoresistive sensor with contacts arranged at least at a spacing from one another and in a region deforming on deflection. The contacts are connected to an electrical voltage source. An inhomogeneous electrical field is formed perpendicular to the contact surfaces in the depth direction so that the electrical resistance between contacts varying in dependence on the deflection can be detected as a measure for the position. The deforming region is formed from electrically conductive or semiconductive material. | 12-03-2009 |
| 20100011872 | METHOD AND APPARATUS FOR A SELF-POWERED RFID-READABLE PEDOMETER - A device, system and method for analyzing a user's motion using a piezoelectric film to generate a plurality of deformation signals based upon an associated plurality of deformations, an EEPROM to record data associated with the plurality of deformation signals, and a transceiver to receive at least a portion of the recorded data from the EEPROM and to transmit data, wherein the analysis may determine an abnormality in the user's gait. | 01-21-2010 |
| 20100095781 | COMPLIANT AND WIRELESS HEALTH MONITORING SENSORS FOR COMPOSITE STRUCTURES - A sensor is provided. The sensor includes a substrate having at least one intrinsically conductive polymer coated on at least a first surface thereof and at least a first and second conductive contact. | 04-22-2010 |
| 20100154555 | Apparatus for Measuring a Mechanical Quantity - An apparatus structure and measurement method are provided to retain high precision and high reliability of a semiconductor mechanical quantity measuring apparatus which senses a mechanical quantity and transmits measured information wirelessly. As to a silicon substrate of the semiconductor mechanical quantity measuring apparatus, for example, a ratio of a substrate thickness to a substrate length along a measurement direction is set small, and a ratio of a substrate thickness to a substrate length along a direction perpendicular to the measurement direction is set small. The apparatus upper surface is covered with a protective member. It is possible to measure a strain along a particular direction and realize mechanical quantity measurement with less error and high precision. An impact resistance and environment resistance of the apparatus itself can be improved. | 06-24-2010 |
| 20100192697 | ROTATING BODY DYNAMIC QUANTITY MEASURING DEVICE AND SYSTEM - A single crystal semiconductor including a Wheatstone bridge circuit formed of an impurity diffusion layer whose longitudinal direction is aligned with a particular crystal orientation is connected to a rotating body. A rotating body dynamic quantity measuring device and a system using the measuring device are fatigue- and corrosion-resistant because of the single crystal semiconductor used and are not easily affected by temperature variations because of the bridge circuit considering a single crystal anisotropy. | 08-05-2010 |
| 20110209556 | STRESS SENSING DEVICES AND METHODS - Embodiments relate to stress sensing devices and methods. In an embodiment, a sensor device includes an active layer; and at least three contacts spaced apart from one another in the active layer, the at least three contacts being coupleable in a first configuration for a first operating mode of the sensor device in which a current in the active layer has a first ratio of horizontal to vertical components with respect to a die surface and in a second configuration different from the first for a second operating mode of the sensor device in which a current in the active layer has a second ratio of horizontal to vertical components, wherein a ratio of a resistance between at least two of the contacts in the first operating mode and a resistance between at least two of the contacts in the second operating mode is related to mechanical stress in the sensor device. | 09-01-2011 |
| 20110226066 | Flexible, Stretchable, and Distributed Strain Sensors - Methods and systems for sensing strain are disclosed. A thin film sensor includes a thin film polymer matrix that has two electrical terminals, conductive nanoparticles dispersed within the polymer matrix, and carbon nanotubes dispersed within the polymer matrix. The thin film sensor has a resistivity across the two electrical terminals that varies with a magnitude of strain applied to the thin film sensor. Strain may be sensed by applying a voltage to the thin film sensor, and an electrical response of the thin film sensor may be detected due to a strain present across the sensor. A magnitude of the strain can be determined based on the electrical response. Methods and systems for a memristor are also disclosed. The memristor has a resistivity that varies with a time-varying voltage input and with a time-varying strain input. | 09-22-2011 |
| 20120031192 | Semiconductor strain gauge array - A strain monitoring system including an array of semiconductor strain gauges. Each strain gauge in the array of strain gauges includes a lithographically fabricated 4-resistor bridge for providing a voltage potential corresponding to the strain in the bridge and thin film transistors to provide addressability to each 4-resistor bridge in the array. After completion of the array of strain gauges, in preferred embodiments the array of strain gauges are transferred to polyimide film which is in turn bonded to a surface region of the component to be tested for strains. Each bridge provides voltage signals corresponding to the strain to which the material under the bridge is being subjected. In preferred embodiments control and data acquisition function are separated from the semiconductor strain gage array. Preferred embodiments the system are utilized to monitor strains on components of aircraft, especially light weight robotic aircraft. | 02-09-2012 |
| 20120125117 | Micromechanical component and production method for a micromechanical component - A micromechanical component includes: an adjustable element connected to a holder at least via a spring; a first sensor device with at least one first piezo-resistive sensor element, which first sensor device provides a first sensor signal relating to a first mechanical stress, the first piezo-resistive sensor element being situated on or in an anchoring region of the spring; and a second sensor device with at least one second piezo-resistive sensor element, which second sensor device provides a second sensor signal relating to a second mechanical stress, the second piezo-resistive sensor element being situated on or in an anchoring region of the spring. | 05-24-2012 |
| 20120144924 | Contact Stress Sensor - A method for producing a contact stress sensor that includes one or more MEMS fabricated sensor elements, where each sensor element of includes a thin non-recessed portion, a recessed portion and a pressure sensitive element adjacent to the recessed portion. An electric circuit is connected to the pressure sensitive element. The circuit includes a pressure signal circuit element configured to provide a signal upon movement of the pressure sensitive element. | 06-14-2012 |
| 20120210800 | STRESS SENSOR FOR MEASURING MECHANICAL STRESSES IN A SEMICONDUCTOR CHIP AND STRESS COMPENSATED HALL SENSOR - A stress sensor ( | 08-23-2012 |
| 20120285255 | STRESS SENSING DEVICES AND METHODS - Embodiments relate to stress sensors and methods of sensing stress. In an embodiment, a stress sensor comprises a vertical resistor. The vertical resistor can comprise, for example, an n-type resistor and can have various operating modes. The various operating modes can depend on a coupling configuration of terminals of the resistor and can provide varying piezo-coefficients with very similar temperature coefficients of resistances. Comparisons of resistances and piezo-coefficients in differing operating modes can provide a measure of mechanical stresses acting on the device. | 11-15-2012 |
| 20130145857 | NANOWIRE STRESS SENSORS AND STRESS SENSOR INTEGRATED CIRCUITS, DESIGN STRUCTURES FOR A STRESS SENSOR INTEGRATED CIRCUIT, AND RELATED METHODS - Methods for sensing a mechanical stress and methods of making stress sensor integrated circuits. The sensing methods include transferring the mechanical stress from the object to one or more nanowires in a stress sensor or stress sensor circuit and permitting the nanowires to change in length in response to the mechanical stress. An electrical characteristic of the stress sensor or stress sensor circuit, which has a variation correlated with changes in the magnitude of the mechanical stress, is measured and then assessed to determine the stress magnitude. The manufacture methods include electrically connecting nanowire field effect transistors having, as channel regions, one or more nanowires of either a different crystalline orientation or a different body width for the individual nanowires so that an offset output voltage results when mechanical strain is applied to the nanowires. | 06-13-2013 |
| 20130152696 | MICROMECHANICAL SEMICONDUCTOR SENSING DEVICE - Micromechanical semiconductor sensing device comprises a micromechanical sensing structure being configured to yield an electrical sensing signal, and a piezoresistive sensing device provided in the micromechanical sensing structure, said piezoresistive sensing device being arranged to sense a mechanical stress disturbing the electrical sensing signal and being configured to yield an electrical disturbance signal based on the sensed mechanical stress disturbing the electrical sensing signal. | 06-20-2013 |
| 20130205910 | NOVEL EMBEDDED 3D STRESS AND TEMPERATURE SENSOR UTILIZING SILICON DOPING MANIPULATION - A new approach for building a stress-sensing rosette capable of extracting the six stress components and the temperature is provided, and its feasibility is verified both analytically and experimentally. The approach can include varying the doping concentration of the sensing elements and utilizing the unique behaviour of the shear piezoresistive coefficient (π | 08-15-2013 |
| 20130239696 | Sensor device with stepped pads for connectivity - A sensor device includes at least one sensor device coupled to a substrate. A solder pad interface includes a plurality of steps, with at least a portion of the steps positioned at different planes, each of a step having a solder pad. A cable with a plurality of cable leads, is configured for each of a cable lead to be coupled to a solder pad. | 09-19-2013 |
| 20130340533 | STRAIN GAUGE USING TWO-DIMENSIONAL MATERIALS - Strain gauge. The gauge includes a substrate and a thin film of overlapping, two-dimensional flakes deposited on the substrate. Structure responsive to conductance across the film is provided whereby a strain induced change in overlap area between neighboring flakes results in a change in conductance across the film. In a preferred embodiment, the two-dimensional flakes are graphene. | 12-26-2013 |
| 20140013855 | DEFLECTION SENSOR FOR IN-SITU DEFLECTION MEASUREMENT IN SEMICONDUCTOR DEVICES - A deflection sensor is disclosed herein. The deflection sensor includes a nanotube film adjacent to a substrate, and first and second contacts electrically connectable with the nanotube film. Methods of making and using the deflection sensor are also disclosed. | 01-16-2014 |
| 20140096616 | METHOD AND APPARATUS FOR SENSING BENDING OF FLEXIBLE DISPLAY DEVICE USING MUTUAL INDUCTANCE - A method of manufacturing a flexible display device for sensing bending that includes forming a lower electrode layer, which includes a plurality of lower electrodes spaced apart from each other on a substrate, forming an insulation layer on the lower electrode layer, forming holes in the insulation layer to expose at least a part of each of the plurality of lower electrodes, and forming an upper electrode layer, which includes a plurality of upper electrodes that are spaced apart from each other on the insulation layer and that fill the holes in the insulation layer. At least two conductive units including the lower electrode layer, the insulation layer, and the upper electrode layer are formed to face each other on a substrate of a non-display unit that is arranged near a boundary of the display device. | 04-10-2014 |
| 20140238144 | SiC HIGH TEMPERATURE PRESSURE TRANSDUCER - The invention concerns a pressure transducer comprising a deflecting membrane, said membrane comprising two piezoresistors ( | 08-28-2014 |
| 20140283618 | SEMICONDUCTOR DEVICE AND STRAIN MONITOR - According to one embodiment, a semiconductor device includes a substrate, a semiconductor substrate, an insulating gate field-effect transistor, and a strain gauge unit. The semiconductor substrate is placed on the substrate and has first and second regions. The insulating gate field-effect transistor is provided in the first region of the semiconductor substrate. The strain gauge unit has a long metal resistor, a first insulating film and a second insulating film. The long metal resistor is provided inside of an upper surface of the semiconductor substrate in the second region of the semiconductor substrate. The first insulating film is provided between the semiconductor substrate and the metal resistor and extends up to the upper surface of the semiconductor substrate. The second insulating film is provided above the first insulating film across the metal resistor. | 09-25-2014 |
| 20150020601 | Device for Measuring Mechanical Quantity - A device for measuring mechanical quantity is provided which reduces the influence of a difference in thermal expansion coefficient between an object to be measured and a base plate metal body, and precisely measures a mechanical quantity such as deformation quantity or strain quantity caused in the object to be measured. The device includes a semiconductor strain sensor module for measuring deformation quantity of the object to be measured, and the module includes a metal body, and a semiconductor strain sensor mounted on the metal body to detect strain of the metal body. The object to be measured is made of a material having a thermal expansion coefficient larger than that of the metal body. Further, the metal body mounted with the semiconductor strain sensor has a structure configured to be fixed to the object to be measured. | 01-22-2015 |
| 20150027231 | Mechanical Quantity Measuring Device - A mechanical quantity measuring device (semiconductor strain sensor) has a semiconductor chip including a plurality of piezoresistive elements formed on a front surface of a semiconductor substrate, a lead wire unit electrically connected to a plurality of electrodes of the semiconductor chip, and a plate member joined to a rear surface of the semiconductor chip. Further, the plate member includes a first region facing the rear surface of the semiconductor chip and a second region provided adjacent to the first region, and a thickness of the plate member in the first region is made larger than a thickness in the second region. | 01-29-2015 |
| 20150075290 | STRAIN SENSOR CHIP MOUNTING STRUCTURE, STRAIN SENSOR CHIP AND METHOD OF MANUFACTURING A STRAIN SENSOR CHIP MOUNTING STRUCTURE - Even when a strain sensor chip and an object to be measured are bonded to each other by using a metallic bonding material such as solder, the metallic bonding material shows the creep behavior when used under high temperature environment of, for example, 100° C. or higher, and therefore, the strain detected by the strain sensor chip is gradually reduced, and the strain is apparently reduced. In the strain sensor chip mounting structure which is one embodiment of the present application, a strain sensor chip is fixed onto a surface to be measured of the object to be measured via a metallic bonding material. And, the metallic bonding material is bonded to a metallic film that is formed on a side surface of the strain sensor chip. In this manner, temporal change in a measurement error can be suppressed. | 03-19-2015 |
| 20150090043 | MEMS - Embodiments provide a MEMS including a MEMS device and an detector circuit. The MEMS device includes a membrane, wherein a material of the membrane comprises a band gap and a crystal structure with structural elements (unit cells) connected by covalent bonds in two dimensions only. The detector circuit is configured to determine a deformation of the membrane based on a piezoresistive resistance of the material of the membrane. | 04-02-2015 |
| 20150135846 | PACKAGE, MADE OF BUILDING MATERIAL, FOR A PARAMETER MONITORING DEVICE, WITHIN A SOLID STRUCTURE, AND RELATIVE DEVICE - A package for a device to be inserted into a solid structure may include a building material that includes particles of one of micrometric and sub-micrometric dimensions. The device may include an integrated detection module having at least one integrated sensor and the package arranged to coat at least one portion of the device including the integrated detection module. A method aspect includes a method of manufacturing the device. A system aspect is for monitoring parameters in a solid structure that includes the device. | 05-21-2015 |
| 20150300895 | CONTACT FORCE SENSOR AND PRODUCTION METHOD FOR SAME - Provided is a contact force sensor of high sensitivity and high accuracy. This contact force sensor is fabricated by machining of a silicon semiconductor material. The contact force sensor is provided with a sensor configuration having a base part, and a contact force transmission part formed in a direction orthogonal to this base part. A stress-electricity conversion element for converting displacement of the contact force transmission part to an electrical signal, formed in the base part of the sensor configuration, is also provided. | 10-22-2015 |
| 20160041015 | SENSOR FOR MONITORING RHEOLOGICALLY COMPLEX FLOWS - Flow sensors, systems, and methods for continuous in situ monitoring of a rheologically complex fluid flow within a vessel, such as particulate and multiphase media for ascertaining certain fluid flow parameters, such as flow rate, dynamic viscosity, fluid density, fluid temperature, particle density and particle mass, from flow sensor measurements. The system involves a fluid flow sensor having a body member with internalized strain gauges configured to measure the deformation of certain segments of the body member. Based, at least in part, on these deformation measurements, the system is used to compute the fluid flow parameters. | 02-11-2016 |
| 20160043043 | DEVICES AND METHODS FOR DETECTING COUNTERFEIT SEMICONDUCTOR DEVICES - Techniques for providing a tamper mechanism for semiconductor devices are disclosed herein. The techniques include, for example, providing at least one die and at least one strain gauge, orienting the at least one strain gauge to the die, forming an encapsulated semiconductor device by encapsulating the die and each strain gauge within a mold compound to maintain respective orientation, and measuring an initial strain value for the at least one strain gauge after forming the encapsulated semiconductor device. | 02-11-2016 |
| 20160069755 | SENSOR, STRAIN SENSOR, AND PRESSURE SENSOR - A sensor includes a first structure that is attachable to a measurement specimen, a second structure that is made of material which is smaller in thermal expansion coefficient than the first structure, a bottom surface of the second structure being connected to the first structure, and a detector that is connected to an upper surface of the second structure, the detector being configured to detect a deformation of the second structure. | 03-10-2016 |
| 20170234673 | PLIABLE PRESSURE-SENDING FABRIC | 08-17-2017 |
