Winbond Electronics Corp. Patent applications |
Patent application number | Title | Published |
20160078634 | METHODS AND SYSTEMS FOR IMAGE MATTING AND FOREGROUND ESTIMATION BASED ON HIERARCHICAL GRAPHS - In accordance with an embodiment, a method for image matting based on a hierarchical graph model, comprises receiving an input image including a plurality of image elements; generating a plurality of matting cells based on the input image, each cell including a group of image elements; calculating affinity values for the plurality of matting cells based on the input image; forming a graph based on the plurality of matting cells and the affinity values, the graph including a plurality of nodes representing the matting cells and a plurality of edges associated with the affinity values of the matting cells; and generating a plurality of matting components for the input image based on the graph. | 03-17-2016 |
20160062545 | PORTABLE ELECTRONIC APPARATUS AND TOUCH DETECTING METHOD THEREOF - A portable electronic apparatus and a touch detecting method thereof are provided. In the method, a touch is detected by a touch screen of the portable electronic apparatus. Then, whether the touch is located in an edge area of the touch screen is determined. If it is determined that the touch is located in the edge area of the touch screen, the touch time during which the touch continues and no other touch is detected by the touch screen is accumulated, and whether the accumulated touch time exceeds a preset time is determined. If the accumulated touch time exceeds the preset time, related information of the touch is removed from an event triggered by the touch until the touch ends. | 03-03-2016 |
20150339425 | CONTACT WINDOW ARRANGING APPARATUS AND CONTACT WINDOW ARRANGING METHOD THEREOF - A contact window arranging apparatus and a contact window arranging method thereof are provided. A first contact window arrangement number and a second contact window arrangement number respectively corresponding to a first boundary and a second boundary are determined according to a first preset distance, and a third contact window arrangement number and a fourth contact window arrangement number respectively corresponding to the first boundary and the second boundary are determined according to a second preset distance, so as to select a total contact window arrangement number with more contact windows. Through taking a horizontal center line and a vertical center line of a rectangular area as benchmarks the contact windows are arranged in a manner corresponding to the total contact window arrangement number. | 11-26-2015 |
20150311354 | SEMICONDUCTOR DEVICES - The invention provides a voltage regulator. The voltage regulator ( | 10-29-2015 |
20150269993 | RESISTIVE MEMORY APPARATUS AND MEMORY CELL THEREOF - A resistive memory apparatus and a memory cell thereof are provided. The resistive memory cell includes a first transistor, a second transistor, a first resistor and a second resistor. First and second terminals of the first transistor are respectively coupled to a first bit line and a reference voltage. First and second terminals of the second transistor are respectively coupled to a second bit line and the reference voltage. The first resistor is serially coupled on a coupling path between the first terminal of the first transistor and the first bit line, or on a coupling path between the second terminal of the first transistor and the reference voltage. The second resistor is serially coupled on a coupling path between the first terminal of the second transistor coupled and the second bit line, or on a coupling path between the second terminal of the second transistor and the reference voltage. | 09-24-2015 |
20150226785 | SEMICONDUCTOR WAFERS, AND TESTING METHODS THEREOF - The invention provides a semiconductor wafer with a die area and a scribe area, and the semiconductor wafer includes a die and a testing circuit. The die is formed on the die region of the semiconductor wafer, and the die includes a main circuit. The testing circuit is disposed on the scribe area of the semiconductor wafer, and is electrically connected to the die for testing the main circuit. | 08-13-2015 |
20150214480 | RESISTIVE RANDOM-ACCESS MEMORY AND METHOD FOR FABRICATING THE SAME - The disclosure provides a method for fabricating a resistive random-access memory, including: providing a substrate; forming an inter-layer dielectric layer over the substrate; forming a stop layer over the inter-layer dielectric layer; forming an opening through the stop layer and the inter-layer dielectric layer; forming a bottom electrode in the opening, wherein the bottom electrode is coplanar with the stop layer; depositing a dielectric layer over the bottom electrode and the stop layer; depositing a top electrode material over the dielectric layer; and patterning the top electrode material and the dielectric layer to define a top electrode and an inter-electrode dielectric layer under the top electrode, wherein the top electrode has a second surface opposite to a first surface of the bottom electrode, arid the second surface has a greater area than the first surface. | 07-30-2015 |
20150213897 | ERASE METHOD FOR FLASH - An erase method for a flash memory is provided. First memory cells of the flash memory are pre-programmed. The first memory cells are disposed in a memory array formed by a plurality of row and column lines. The programmed first memory cells are erased. The erased first memory cells are post-programmed, to repair the over-erased first memory cells. Second memory cells are programmed after the erased first memory cells are post-programmed. The second memory cells are disposed in a first specific column line of the memory array. The first specific column line is arranged after a last column line corresponding to a last valid column address. Third memory cells disposed in a second specific column line of the memory array. The second specific column line is arranged after the last column line and is adjacent to the first specific column line. | 07-30-2015 |
20150146473 | RESISTIVE MEMORY APPARATUS AND WRITE-IN METHOD THEREOF - A resistive memory apparatus and a write-in method thereof are provided. The memory controller provides unselected bit-lines and unselected word-lines both not coupled to a selected resistive memory cell respectively with a first bit-line voltage and a first word-line voltage in one of a setting duration and a resetting duration, wherein the first bit-line voltage is equal to a product of a writing-in voltage V | 05-28-2015 |
20150124531 | IAS VOLTAGE GENERATOR FOR REFERENCE CELL AND BIAS VOLTAGE PROVIDING METHOD THEREFOR - A bias voltage generator and generating method for a reference cell are provided. The bias voltage generator includes a data read detector, a cut-off signal generator and an output stage circuit. The data read detector generates a detection signal according to transition points of a sense amplifier enable signal and a sense amplifier latch signal. The cut-off signal generator delays the detection signal a delay time to generate a cut-off signal, wherein a start-up time of the cut-off signal is decided by the detection signal and the delay time. The output stage circuit starts or stops to provide a bias-voltage providing signal according to the cut-off signal. | 05-07-2015 |
20150109858 | MEMORY DEVICE AND COLUMN DECODER FOR REDUCING CAPACITIVE COUPLING EFFECT ON ADJACENT MEMORY CELLS - A memory device includes a memory cell array and a column decoder. The memory cell array includes a plurality of even local bit lines and a plurality of odd local bit lines. The column decoder includes a plurality of even pass transistors and a plurality of odd pass transistors. Each of the even pass transistors has a, control terminal coupled to a respective one of a plurality of even selection lines, a first terminal coupled to a respective one of the even local bit lines, and a second terminal coupled to an even global bit line. Each of the odd pass transistors has a control terminal coupled to a respective one of a plurality of odd selection lines, a first terminal coupled to a respective one of the odd local bit lines, and a second terminal coupled to an odd global bit line. | 04-23-2015 |
20150092491 | SEMICONDUCTOR MEMORY DEVICE AND ERASING METHOD - A reliable semiconductor memory device and an erasing method for erasing data in a reliable manner are provided. The erasing method is applied to erase a semiconductor memory device having a memory array, and the memory array has an NAND string. A predetermined voltage is applied to a gate of a select transistor of the NAND string, and the predetermined voltage is applied to a word line of a memory cell of the NAND string. An erasing voltage is applied to a substrate region at a first timing, and the substrate region has the NAND string. The gate of the select transistor is floated at a second timing. Here, there is a fixed time interval between the first timing and the second timing, and the second timing is later than the first timing. | 04-02-2015 |
20150078097 | SEMICONDUCTOR MEMORY APPARATUS AND METHOD FOR ERASING THE SAME - A flash memory with low power consumption and rapid operations is disclosed, including a memory array of memory cells, a word line selection circuit for selecting a row of cells, a current-type sensing circuit electrically connected with each bit line for sensing the current of a selected bit line, and an erase unit erasing the cells in a selected block of the array. The erase unit includes: an erase sequence that determines whether the current of each bit line in the erased block is larger than a first value and ends the erasure if the result is “yes”, and a soft-program sequence that performs a soft program verification, which applies a soft-program voltage to all word lines in the erased block and determines whether the current of each bit line is lower than a second value, and ends the soft programming if the result is “yes”. | 03-19-2015 |
20150058643 | Devices and Methods for Multi-Core Memory - A power management device is adopted in a memory device which includes a first memory unit and a second memory unit, including a first voltage regulator, a second voltage regulator, and a controller. The first voltage regulator receives a supply voltage from an external supply source and provides a first internal voltage to the first memory unit. The second voltage regulator receives the supply voltage from the external supply source and provides a second internal voltage to the second memory unit. The controller independently enables or disables the first voltage regulator and the second voltage regulator according to a control signal. | 02-26-2015 |
20150026393 | Semiconductor Memory Device - A semiconductor memory device includes a memory array, a setting unit and a control unit. The memory array consists of non-volatile memory cells. The setting unit set a page address of the memory array which is initially read out at startup. The control unit performs an internal sequence to read out the page address from the setting unit at startup and, according to the read-out page address, transmits page data corresponding to the read-out page address from the memory array to a page buffer. | 01-22-2015 |
20140307504 | DATA STORAGE DEVICE, AND FABRICATION AND CONTROL METHODS THEREOF - A data storage device and fabrication and control methods thereof are disclosed. The data storage device includes a first-first sub-block of memory cells, a second-first sub-block of memory cells, a first well switch, a second well switch and a first group of word lines. The first well switch is operative to convey a first well bias to bias the first-first sub-block of memory cells. The second well switch is operative to convey a second well bias to bias the second-first sub-block of memory cells. Further, the first-first and the second-first sub-blocks both are activated according to the first group of word lines. | 10-16-2014 |
20140301147 | SEMICONDUCTOR STORAGE WITH A FLOATING DETECTION CIRCUITRY AND FLOATING DETECTION METHOD THEREOF - A storage medium including a plurality of memory cells, a plurality of transmission lines, a driving module and a floating detection module is disclosed. The memory cells store data. The transmission lines are coupled to the memory cells. The driving module accesses the memory cells via the transmission lines. The floating detection module includes a reset unit, a plurality of connectors and a detector. The reset unit is coupled to a detection line. Each of the connectors is coupled between one of the transmission lines and the detection line. The detector determines whether a state of at least one of the transmission lines is a floating state according to a level of the detection line. | 10-09-2014 |
20140248773 | PATTERNING METHOD AND METHOD OF FORMING MEMORY DEVICE - A method of forming memory device is provided. A substrate having at least two cell areas and at least one peripheral area between the cell areas is provided. A target layer, a sacrificed layer and a first mask layer having first mask patterns in the cell areas and second mask patterns in the peripheral area are sequentially formed on the substrate. Sacrificed layer is partially removed to form sacrificed patterns by using the first mask layer as a mask. Spacers are formed on sidewalls of the sacrificed patterns. The sacrificed patterns and at least the spacers in the peripheral area are removed. A second mask layer is formed in the cell areas. Target layer is partially removed, using the second mask layer and remaining spacers as a mask, to form word lines in the cell areas and select gates in a portion of cell areas adjacent to the peripheral area. | 09-04-2014 |
20140233340 | ROW DECODING CIRCUIT - A row decoding circuit including row decoding blocks is provided. Each of the row decoding blocks includes row decoders. Each of the row decoders receives a pre-charge signal, and includes an inverter, a selecting transistor and at least one switch transistors. The inverter receives the corresponding pre-charge signal, and outputs a first control signal. The first source/drain of the selecting transistor is coupled to a system high voltage, the gate receives the first control signal, and the second source/drain outputs a corresponding row selecting signal to a memory array of a memory device. The switch transistors are coupled between the second source/drain of the selecting transistor and a corresponding first reference signal in series. When the selecting transistor is controlled by the first control signal and turned on, the first reference signal is set to a high voltage level. | 08-21-2014 |
20140231742 | RESISTANCE MEMORY DEVICE - Provided is a resistance memory device including a dielectric layer, a conductive layer, a bottom electrode, a top electrode and a variable resistance layer. The dielectric layer is disposed on a substrate and has a first opening constituted by a lower opening and an upper opening. The conductive layer fills up the lower opening. The bottom electrode is disposed on the bottom and on at least a portion of the sidewall of the upper opening. The top electrode is disposed in the upper opening. The variable resistance layer is disposed between the top electrode and the bottom electrode. | 08-21-2014 |
20140177343 | MEMORY DEVICE WITH HIGH-SPEED READING FUNCTION AND METHOD THEREOF - A method includes steps of: providing a first memory cell array including a plurality of first word lines, wherein a plurality of first data are stored in the first memory cell array; providing a second memory cell array including a plurality of second word lines, wherein the second memory cell array is separated from the first memory cell array, and a plurality of second data are stored in the second memory cell array; selecting one of the first word lines and one of the second word lines at a same time or an overlapping time; alternately selecting a first address of the first memory cell array and a second address of the second memory cell array to alternately read a first corresponding portion of the first data and a second corresponding portion of the second data from the first memory cell array and the second memory cell array. | 06-26-2014 |
20140158967 | SELF-RECTIFYING RRAM CELL STRUCTURE AND 3D CROSSBAR ARRAY ARCHITECTURE THEREOF - The present disclosure provides a self-rectifying RRAM, including: a first electrode layer formed of a first metal element; a second electrode layer formed of a second metal element different from the first metal element; and a first resistive-switching layer and a second resistive-switching layer sandwiched between the first electrode layer and the second electrode layer, wherein the first resistive-switching layer and the second switching layer form an ohmic contact, and the first resistive-switching layer has a first bandgap lower than a second bandgap of the second resistive-switching layer. Furthermore, an RRAM 3D crossbar array architecture is also provided. | 06-12-2014 |
20140127905 | METHOD OF FORMING PATTERN IN SUBSTRATE - A method of forming a pattern in a substrate is provided, in which the substrate having a pattern region is provided first. A plurality of stripe-shaped mask layers is formed on the substrate in the pattern region. Each of at least two adjacent stripe-shaped mask layers among the stripe-shaped mask layers has a protrusion portion and the protrusion portions face to each other. A spacer is formed on sidewalls of the stripe-shaped mask layers, wherein a thickness of the spacer is greater than a half of a distance between two of the protrusion portions. Subsequently, the stripe-shaped mask layers are removed. An etching process is performed by using the spacer as a mask to form trenches in the substrate. Thereafter, the trenches are filled with a material. | 05-08-2014 |
20140125362 | SEMICONDUCTOR DEVICE AND DETECTION METHOD THEREOF - A semiconductor device and a detection method thereof are provided. The semiconductor device includes a resistor terminal, a dummy pull up driver, a comparator and a detection state machine. The resistor terminal is connected to an external resistor. The dummy pull up driver provides driving operations of 2 | 05-08-2014 |
20140122813 | STORAGE MEDIUM AND ACCESSING SYSTEM UTILIZING THE SAME - A storage medium communicating with a memory controller sent a read command is disclosed. The storage medium includes a plurality of memory units. Each memory unit includes at least sixteen memory cells coupled to a word line and a plurality of bit lines. A controlling unit receives first address information according to the read command and generates a row read signal and a column read signal according to the first address information. A row decoding unit activates the word line according to the row read signal. A column decoding unit activates the bit lines according to the column read signal to output a plurality of storing bits stored in the sixteen memory cells. A read-out unit processes the storing bits to generate a plurality of reading bits. The controlling unit outputs the reading bits to the memory controller in serial. | 05-01-2014 |
20140112088 | CONTROL CIRCUIT, MEMORY DEVICE AND VOLTAGE CONTROL METHOD THEREOF - A control circuit, a memory device and a voltage control method thereof are provided. The memory device includes a memory cell, a voltage regulator circuit and the control circuit. The control circuit receives a clock signal, and determines a clock frequency of the clock signal so as to generate a control signal. An operation voltage is converted into an internal supply voltage for supplying the control circuit by the voltage regulator circuit according to the control signal. | 04-24-2014 |
20140104950 | NON-VOLATILE SEMICONDUCTOR MEMORY - A non-volatile semiconductor memory includes a memory array. In a programming operation, programming pulses are applied to a page of the memory array to program data to the page. In an erase operation, erase pulses are applied to a block of the memory array to erase data in the block. The non-volatile semiconductor memory performs a pre-program operation before the erase operation and a post-erase operation after the erase operation. In the pre-program operation, each page of the block is programmed according to voltage information relating programming pulses. In the erase operation, data in the block is erased according to the voltage information relating programming pulses. | 04-17-2014 |
20140104947 | NON-VOLATILE SEMICONDUCTOR MEMORY DATA READING METHOD THEREOF - A non-volatile semiconductor memory includes a memory array, a selecting device selecting a page according to addresses, a data storage device, storing page data, and an output device outputting the stored data. The data storage device includes a first data storage device receiving data from a selected page of the memory array, a second data storage device receiving data from the first data storage device, and a data transmission device configured between the first and the second data storage device. The data transmission device transmits data in a second part of the first data storage device to the second data storage device when data in a first part of the second data storage device is output, and transmits data in a first part of the first data storage device to the second data storage device when data in a second part of the second data storage device is output. | 04-17-2014 |
20140071770 | Burst Sequence Control And Multi-Valued Fuse Scheme In Memory Device - A decoder circuit, responsive to a burst sequence control signal, for accessing a memory location in a memory array. The decoder circuit receives an address signal and outputs a plurality of first select lines. Logic circuitry receives these first select lines and a burst sequence control signal and outputs a plurality of second select lines. When the bust sequence control signal is unasserted, the logic circuitry passes through to the plurality of second select lines the signals received on the plurality of first select lines. When the burst sequence control signal is asserted, the logic circuitry performs a logical operation on the signals received on the plurality of first select lines and outputs the result on the plurality of second select lines. | 03-13-2014 |
20140071766 | REFERENCE CELL CIRCUIT AND METHOD OF PRODUCING A REFERENCE CURRENT - The present invention discloses a reference cell circuit which is applied to a non-volatile memory. The reference cell circuit includes a reference cell array, a first current mirror circuit, and a second current mirror circuit. The reference cell array includes at least one row of floating gate transistors. The first current mirror circuit is arranged to generate a mirror current according to a reference current generated by the reference cell array. The second current mirror circuit is arranged to receive the mirror current and generate an adjusted reference current according to the mirror current and a selected one of a plurality of enable signals, wherein the plurality of enable signals correspond to a plurality operations of the non-volatile memory and the adjusted reference current is arranged to determine logical state of a plurality of memory cells of the non-volatile memory. | 03-13-2014 |
20140063970 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device performing high speed reading with a miniaturized sensing circuit is provided. A pre-charge voltage from a virtual potential VPRE′ is provided to an odd bit line when an even bit line is selected, the pre-charge voltage is provided from a source voltage supply unit | 03-06-2014 |
20140062584 | Semiconductor Integrated Circuit - A semiconductor integrated circuit includes a first internal voltage generator including a PMOS and a first comparator, and a second internal voltage generator including an NMOS, a second comparator, and a voltage pump generator configured to provide a pumping power voltage to the second comparator. A power control circuit switchably enables an output from the first internal voltage generator during a power-on of the semiconductor integrated circuit and enables an output from the second internal voltage generator after the power-on. | 03-06-2014 |
20140050041 | DATA STORAGE DEVICE AND CONTROL METHOD FOR NON-VOLATILE MEMORY - A data storage device having a non-volatile memory and a controller and a control method for the non-volatile memory are disclosed. The non-volatile memory has a plurality of blocks for data storage and each block provides a plurality of sectors. The controller allocates erase marker bits in each of the sectors to record the progress of an erase operation performed on the non-volatile memory for resumption of the erase operation when required. | 02-20-2014 |
20140043906 | SEMICONDUCTOR MEMORY DEVICES - A flash memory capable of writing or deleting a split block is provided. A flash memory includes a memory array comprising a plurality of blocks, and a word line selection circuit, wherein each of the plurality of blocks is formed by a plurality of cell units in a well. The cell unit comprises N memory cells, a selection transistor coupled to one terminal of the memory cells, a selection transistor coupled to the other terminal of the memory cells, and a dummy selection transistor coupled between the memory cells. The word line selection circuit splits the block into a first block and a second block to use according to the operation of data writing or data deleting. | 02-13-2014 |
20140035663 | Boosting Circuit - A boosting circuit, includes an output circuit including a first transmission circuit, transmitting charges of a first boosting node to a first output node according to a first transmission control signal, a detection circuit, detecting the voltage level of the first output node, and a pre-charge circuit pre-charging the first boosting node according a detection signal of the detection circuit; a first pump circuit includes a second transmission circuit, transmitting charges to a second output node according to a second transmission control signal, and a first capacitance unit, coupled to the first boosting node, boosting the voltage level of the first boosting node according to charges transmitted in the second output node; and a control circuit, coupled to the output circuit and the first pump circuit, controls the second transmission control signal according to the voltage level of the first output node. | 02-06-2014 |
20140032816 | SERIAL INTERFACE FLASH MEMORY APPARATUS AND WRITING METHOD FOR STATUS REGISTER THEREOF - A serial interface flash memory apparatus and a writing method for a status register thereof are disclosed. The writing method for the status register mentioned above includes: receiving a write command with an updated data for the status register; writing the updated data to a volatile latch and set an update flag according to whether or not a write-protected data in the status register is updated by the write command; and writing the data from the volatile latch to the status register according to the update flag when a power down process of the serial interface flash memory apparatus is processed. | 01-30-2014 |
20130336060 | MEMORY DEVICE AND REDUNDANCY METHOD THEREOF - A memory device includes at least one memory, a controller controlling the at least one memory and a connect unit. The at least one memory includes a memory region comprising a plurality of memory cells, a redundant memory region comprising a plurality of memory cells and a redundancy information memory unit. The redundancy information memory unit stores redundancy information of the memory cells of the memory region. The controller includes a control unit. The control unit controls data read-out from the at least one memory and data to be written-in to the at least one memory according to the redundancy information stored in the redundancy information memory unit. | 12-19-2013 |
20130248814 | NON-VOLATILE MEMORY DEVICE AND ARRAY THEREOF - A non-volatile memory device including a first electrode, a resistor structure, a diode structure, and a second electrode is provided. The resistor structure is disposed on the first electrode. The resistor structure includes a first oxide layer. The first oxide layer is disposed on the first electrode. The diode structure is disposed on the resistor structure. The diode structure includes a metal layer and a second oxide layer. The metal layer is disposed on the first oxide layer. The second oxide layer is disposed on the metal layer. The second electrode is disposed on the diode structure. A material of the metal layer is different from that of the second electrode. Furthermore, a non-volatile memory array including the foregoing memory devices is also provided. | 09-26-2013 |
20130217193 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device is described. A plurality of isolation structures is formed in a substrate. The isolation structures are arranged in parallel and extend along a first direction. A well of a first conductive type is formed in the substrate. A plurality of first doped regions of a second conductive type is formed in the well. Each of the first doped regions is formed between two adjacent isolation structures. A plurality of gates of the second conductive type is formed on the substrate. The gates are arranged in parallel and extend along a second direction different from the first direction. One of the first doped regions is connected to one of the gates. A plurality of second doped regions of the first conductive type is formed in the well. Each of the second doped regions is formed in the first doped regions between two adjacent gates. | 08-22-2013 |
20130181766 | VOLTAGE GENERATOR - A voltage generator adapted for a flash memory is disclosed. The voltage generator includes a charge pump circuit and a voltage regulator. The charge pump circuit includes at least one charge pump unit having a voltage receiving terminal and a voltage transmitting terminal. The voltage receiving terminal receives a reference voltage and the voltage transmitting terminal generates an output voltage. The charge pump unit includes first and second voltage transmitting channels and first and second capacitors. The first and second voltage transmitting channels are turned on or off according first and second control signals, respectively. The first and second capacitors receive the first and second pump enabling signals, respectively. The voltage regulator outputs a regulated output voltage according to the output voltage. | 07-18-2013 |
20130155782 | RANDOM ACCESS MEMORY AND REFRESH CONTROLLER THEREOF - A random access memory and a refresh controller thereof are provided. The refresh controller includes a write action detector, a latch device, a reset circuit, and a refresh masking device. The write action detector is coupled to an address decoder of the random access memory, and is used to detect a write action in an address corresponding to the address decoder and generate a detection result. The latch device is coupled to the write action detector, and is used to receive and latch the detection result. The reset circuit is coupled to the latch device, receives a reset control signal, and resets the detection result according to the reset control signal. The refresh masking device is coupled to a corresponding word line control circuit and the latch device and is used to mask a refresh action on the word line control circuit according to the detection result. | 06-20-2013 |
20130145093 | NON-VOLATILE SEMICONDUCTOR MEMORY AND DATA READING METHOD THEREOF - A non-volatile semiconductor memory is provided, including a memory array having a first and a second memory planes, a page buffer, holding data transmitted by pages selected by address information from a memory array; data register, capable of serially outputting data received by the page buffer according to a clock signal. The pages selected by the first and the second memory planes are simultaneously transmitted to the page buffer. The data reading includes: transmitting the data of the second page of the second memory plane from the page buffer to the data register when the data of the first page of the first memory plane is outputted from the data register; transmitting the data of the second page of the first memory plane from the page buffer to the data register when the data of the second page of the second memory plane is outputted from the data register. | 06-06-2013 |
20130078775 | METHOD OF FABRICATING MEMORY - A method of fabricating a memory is provided. A substrate including a memory region and a periphery region is provided. A plurality of first gates is formed in the memory region and a plurality of first openings is formed between the first gates. A nitride layer is formed on the substrate in the memory region, and the nitride layer covers the first gates and the first openings. An oxide layer is formed on the substrate in the periphery region. A nitridization process is performed to nitridize the oxide layer into a nitridized oxide layer. A conductive layer is formed on the substrate, and the conductive layer includes a cover layer disposed on the substrate in the memory region and a plurality of second gates disposed on the substrate in the periphery region. The cover layer covers the nitride layer and fills the first openings. | 03-28-2013 |
20130037860 | 3D MEMORY ARRAY - A 3-D memory is provided. Each word line layer has word lines and gaps alternately arranged along a first direction. Gaps include first group and second group of gaps alternately arranged. A first bit line layer is on word line layers and has first bit lines along a second direction. A first conductive pillar array through word line layers connects the first bit line layer and includes first conductive pillars in first group of gaps. A first memory element is between a first conductive pillar and an adjacent word line. A second bit line layer is below word line layers and has second bit lines along the second direction. A second conductive pillar array through word line layers connects the second bit line layer and includes second conductive pillars in second group of gaps. A second memory element is between a second conductive pillar and an adjacent word line. | 02-14-2013 |
20130016560 | SEMICONDUCTOR MEMORY DEVICESAANM YANO; MasaruAACI TokyoAACO JPAAGP YANO; Masaru Tokyo JPAANM CHIANG; Lu-PingAACI Hsinchu CityAACO TWAAGP CHIANG; Lu-Ping Hsinchu City TW - A semiconductor memory device includes a memory array, a row selection circuit and a bit line selection circuit. The memory array is composed of a plurality of cell units, wherein each cell unit has memory cells connected in series. The row selection circuit selects the memory cells in a row direction of the cell units, and the bit line selection circuit selects a bit line from an even bit line and an odd bit line coupled to the cell units. The bit line selection circuit includes a first selection part including selection transistors for selectively coupling the even or odd bit line to a sensor circuit and a second selection part including bias transistors for selectively coupling the even or odd bit line to a voltage source providing biases, wherein the bias transistors and the memory cells are formed in a common well. | 01-17-2013 |
20130015508 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAMEAANM Jang; Wen-YuehAACI Hsinchu CityAACO TWAAGP Jang; Wen-Yueh Hsinchu City TW - A semiconductor device and a method for fabricating the same are described. The semiconductor device includes a well of a first conductive type, first doped regions of a second conductive type, gates of the second conductive type, second doped regions of the first conductive type, and isolation structures. The well is disposed in a substrate. The first doped regions are disposed in the well. The first doped regions are arranged in parallel and extend along a first direction. The gates are disposed on the substrate. The gates are arranged in parallel and extend along a second direction different from the first direction. One of the first doped regions is electrically connected to one of the gates. Each of the second doped regions is disposed in the first doped regions between two adjacent gates. Each of the isolation structures is disposed in the substrate between two adjacent first doped regions. | 01-17-2013 |
20120287712 | SEMICONDUCTOR DEVICE - A semiconductor device including a logic circuit capable of decreasing a leakage current occurred during a standby state is provided. The semiconductor device includes a power supply portion for supplying a first operation voltage or a second operation voltage smaller than the first operation voltage; a P-type low-threshold transistor Tp for receiving the first or the second operation voltage from the power supply portion; and a N-type transistor Tn connected between the transistor Tp and a base potential. The transistors Tp, Tn construct a logic circuit. The power supply portion supplies the first operation voltage to the source of the transistor Tp in the enable state, and supplies the second operation voltage in a standby state. The second operation voltage is set so that voltage amplitude between gate and source of each transistor Tp, Tn is larger than the threshold value of the transistors Tp, Tn. | 11-15-2012 |
20120246384 | FLASH MEMORY AND FLASH MEMORY ACCESSING METHOD - A flash memory accessing method is provided. The method includes: firstly, dividing the flash memory into a primary storage area and a backup storage area, wherein the difference between a first start address of the primary storage area and a second start address of the backup storage area is an offset address not equal to zero; reading the flash memory according to a address pointer equal to the first start address so as to obtain the boot data; making the electronic apparatus perform a boot sequence according to the boot data; then, detecting whether the boot sequence is normal or not, and when the boot sequence is abnormal, providing the flash memory with changing the read pointer to the second start address according to an offset address to read the backup boot data. | 09-27-2012 |
20120221766 | FLASH MEMORY APPARATUS WITH SERIAL INTERFACE AND RESET METHOD THEREOF - A flash memory apparatus with serial interface is disclosed. The flash memory apparatus includes a selector, a core circuit and a programmable data bank. The selector decides whether or not to connect one of a write protect pin and a hold pin to a reset signal line. The core circuit receives a reset signal transmitted by the reset signal line and activates a reset operation accordingly. A selecting data is written into the programmable data bank through a programming method and the programmable data bank outputs the selecting data to serve as a selecting signal. | 08-30-2012 |
20120161734 | LOW DROP OUT VOLTAGE REGULATO - A low drop out (LDO) voltage regulator having an error amplifier, a power transistor, a first voltage division unit, a compensation control unit and a compensation bias current source is provided. The error amplifier generates a control voltage according to a first reference voltage and a feedback voltage. The power transistor generates an output voltage at a drain of the power transistor according to the control voltage. The first voltage division unit divides the output voltage to generate the feedback voltage. The compensation control unit generates a compensation control signal to the compensation bias current source according to the control voltage, the output voltage and a compensation bias, so as to make the compensation bias current source generate a compensation bias current, in which the compensation bias is inversely proportional to a supply voltage and ambient temperature. | 06-28-2012 |
20120089773 | DYNAMIC RANDOM ACCESS MEMORY UNIT AND DATA REFRESHING METHOD THEREOF - A dynamic random access memory (DRAM) unit and a data refreshing method thereof are provided. The DRAM unit includes a memory array, a refresh address module, and a refresh control module. The memory array includes multiple memory cells. The refresh address module produces a refresh word line address cyclically during a refresh mode. The refresh control module coupled to the memory array and the refresh address module obtains a start word line address and a stop word line address corresponding to the start word line address to form a memory word line address interval. Then, the refresh control module determines that the refresh word line address is within the memory word line address interval to execute a data charging operation to the memory cells corresponding to the refresh word line address, or stop the data charging operation otherwise, so as to reduce power consumption during the refresh mode. | 04-12-2012 |
20120086500 | FUSE DETECTING APPARATUS - A fuse detecting apparatus including a detector, a calibrator and a logical operating unit is disclosed. The detector includes a detecting switch module and a detecting latch. The detecting switch module generates an initial detecting result according to a first and a second control signals and a status of the fuse. The detecting latch stores a voltage level of the initial detecting result or maintains its originally stored voltage level according to the initial detecting result for generating a pre-calibrating detecting signal. The calibrator includes a calibrating switch module and a calibrating latch. The calibrating switch module generates a calibrating result according to the first and the second control signals. The calibrating latch stores the calibrating result and generates a calibrating signal accordingly. The logical operating unit generates a calibrated detecting signal according to the pre-calibrating detecting signal and the calibrating signal. | 04-12-2012 |
20110279102 | CONTROL CIRCUIT OF CHARGE PUMP CIRCUIT - A control circuit of a charge pump circuit is disclosed, which includes a ring oscillator and a load status detection unit. The ring oscillator herein is for producing a clock signal and adjusting the frequency of the clock signal according to a first control signal, and stopping generating the clock signal according to an adjustment signal. The load status detection unit is for producing the first control signal and determining a time point to enable the first control signal according to the voltage drop variation of an output voltage of the charge pump circuit and the adjustment signal, wherein the pulse width of the adjustment signal gets narrower with a smaller drop amplitude of the output voltage value. | 11-17-2011 |
20110201170 | METHOD OF FABRICATING MEMORY - A method of fabricating a memory is provided. A substrate comprising a memory region and a periphery region is provided. A plurality of gates is formed on the substrate and a first spacer is formed on a sidewall of each gate, where a plurality of openings is formed between the gates in the memory region. A first material layer formed on the substrate in the memory region covers the gates in the memory region and fills the openings. A process is performed to the periphery region. The first material layer is partially removed to form a first pattern in each opening respectively. A second material layer formed on the substrate covers the memory region and the periphery region to expose the first patterns. The first patterns are removed to form a plurality of contact openings in the second material layer. The contact plugs are formed in the contact openings. | 08-18-2011 |
20110053338 | FLASH MEMORY AND METHOD OF FABRICATING THE SAME - In a method of fabricating a flash memory, a substrate with isolation structures formed therein and a dielectric layer and a floating gate formed thereon between isolation structures is provided. A mask layer is formed on the substrate, covering the isolation structures in a periphery region and the isolation structure in a cell region adjacent to the periphery region. The isolation structures in the cell region not covered by the mask layer are partially removed. Therefore, a first height difference is between surfaces of the isolation structures in the periphery region and a surface of the dielectric layer, and between a surface of the isolation structure in the cell region adjacent to the periphery region and the surface of the dielectric layer. A second height difference smaller than the first height difference is between surfaces of other isolation structures in the cell region and the surface of the dielectric layer. | 03-03-2011 |
20100315877 | DATA SENSING MODULE AND SENSING CIRCUIT FOR FLASH MEMORY - A sensing circuit for a flash memory is provided. The sensing circuit includes a first transistor, a detector, and a charge circuit. A drain of the first transistor is coupled to a bias, a gate thereof receives an inverted signal, and a source thereof receives a data. In addition, the drain of the first transistor is further coupled to the detector. Therefore, the detector detects a voltage of the drain of the first transistor. When the voltage of the drain is lower than a threshold voltage, the detector enables a control signal. The charge circuit charges the source of the first transistor when the control signal is enabled, until the voltage of the drain of the first transistor reaches the threshold voltage. | 12-16-2010 |
20100283146 | SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SAME - A semiconductor structure including a substrate, an insulating layer, a composite pad structure, a passivation layer, and a bump is provided. A circuit structure is disposed on the substrate. The insulating layer covers the substrate and has a first opening exposing the circuit structure. The composite pad structure includes a first conductive layer, a barrier layer, and a second conductive layer which are sequentially disposed. The composite pad structure is disposed on the insulating layer and fills the first opening to electrically connect to the circuit structure. The passivation layer covers the composite pad structure and has a second opening exposing the composite pad structure. The bump fills the second opening and electrically connects to the composite pad structure. | 11-11-2010 |
20100265774 | METHOD FOR DETERMINING NATIVE THRESHOLD VOLTAGE OF NONVOLATILE MEMORY - A method for determining native threshold voltage of nonvolatile memory includes following steps. A memory cell including a control gate, a charge storage layer, a source region, and a drain region is provided. A programming operation is performed on the memory cell by using F-N tunneling effect to obtain a programming curve of time versus threshold voltage. In the programming operation, a positive voltage is applied to the control gate. An erase operation is performed on the memory cell by using F-N tunneling effect to obtain an erasure curve of time versus threshold voltage. In the erase operation, a negative voltage is applied to the control gate. The absolute values of the positive voltage and the negative voltage are the same. The native threshold voltage of memory cell is determined from the cross point of the programming curve and the erasure curve. | 10-21-2010 |
20100213432 | PHASE CHANGE MEMORY DEVICE AND FABRICATION THEREOF - A method for forming a phase change memory device is disclosed. A substrate with a bottom electrode thereon is provided. A heating electrode and a dielectric layer are formed on the bottom electrode, wherein the heating electrode is surrounded by the dielectric layer. The heating electrode is etched to form recess in the dielectric layer. A phase change material is deposited on the dielectric layer, filling into the recess. The phase change material is polished to remove a portion of the phase change material exceeding the surface of the dielectric layer and a phase change layer is formed confined in the recess of the dielectric layer. A top electrode is formed on the phase change layer and the dielectric layer. | 08-26-2010 |
20100202232 | REFRESHING METHOD - A refreshing method suitable for a memory device is provided which includes the following steps. A sleep mode is set and the memory device cannot be read and programmed in the sleep mode. A first and a second memory cell arrays are sequentially auto-refreshed, and the steps for auto-refreshing each of the first and the second memory cell arrays individually include: during an equalization period, switching the potential of a sense line pair, a first bit line pair and a second bit line pair to a reference voltage wherein the sense line pair is not coupled to the second bit line pair, and during a refreshing period, adjusting the potential of the first and the second bit line pairs according to a refresh sequence of the first and the second memory cell arrays, thereby coupling the sense line pair to one of the first and the second bit line pairs. | 08-12-2010 |
20100165708 | MEMORY CONTROLLER AND DECODER - A memory controller and a decoder are provided. The decoder is adapted to the memory controller. The decoder includes a first transistor to a fourth transistor. Gates of the first to the fourth transistor are coupled to a first to a fourth control signal respectively. A first terminal and a second terminal of the first transistor are coupled to a first voltage and a first terminal of the second transistor respectively. First terminals and second terminals of the third transistor and the fourth transistor are coupled to a second terminal of the second transistor and a second voltage respectively. When the first transistor and the second transistor are turned off, a voltage of the second control signal is lower than a voltage of the first control signal. Thereby, a gate-induced drain leakage (GIDL) current of the transistors is reduced. | 07-01-2010 |
20100163828 | PHASE CHANGE MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME - A phase change memory device is provided, including a semiconductor substrate with a first conductive semiconductor layer disposed thereover, wherein the first conductive semiconductor layer has a first conductivity type. A first dielectric layer is disposed over the semiconductor substrate. A second conductive semiconductor layer having a second conductivity type opposite to the first conductivity type is disposed in the first dielectric layer. A heating electrode is disposed in the first dielectric layer and formed over the second conductive semiconductor layer, wherein the heating electrode has a tapered cross section and includes metal silicide. A second dielectric layer is disposed over the first dielectric layer. A phase change material layer is disposed in the second dielectric layer. An electrode is disposed over the second dielectric layer, covering the phase change material layer. | 07-01-2010 |
20100117050 | PHASE-CHANGE MEMORY ELEMENT - A phase-change memory element with an electrically isolated conductor is provided. The phase-change memory element includes: a first electrode and a second electrode; a phase-change material layer electrically connected to the first electrode and the second electrode; and at least two electrically isolated conductors, disposed between the first electrode and the second electrode, directly contacting the phase-change material layers. | 05-13-2010 |
20100007353 | GROUP OF CIRCUITS AND TESTING METHOD THEREOF AND TESTING MACHINE THEREOF - A Group of circuits and a testing method thereof and a testing machine thereof are provided. In the testing method, a first voltage of a first circuit is adjusted to be a second voltage according to a first adjusting signal, wherein the second voltage is closer to a standard voltage compared to the first voltage. Further, a third voltage of a second circuit is adjusted to be a forth voltage according to a second adjusting signal, and the forth voltage is closer to the standard voltage compared to the third voltage. In addition, a margin range of the second voltage and a margin range of the forth voltage are adjusted together according to a margin adjusting signal. Thereby, time required for testing the first circuit and the second circuit can be decreased, so as to lower the cost. | 01-14-2010 |
20100006814 | PHASE-CHANGE MEMORY ELEMENT - A phase-change memory cell is proposed. The phase-change memory includes a bottom electrode; a phase-change spacer formed to contact the bottom electrode; an electrical conductive layer having a vertical portion and a horizontal portion, wherein the electrical conductive layer electrically connects to the phase-change spacer via the horizontal portion; and a top electrode electrically connected to the electrical conductive layer via the vertical portion of the electrically conductive layer. | 01-14-2010 |
20090296450 | Memory And Writing Method Thereof - A memory having a memory cell, a resistance estimator and a write current generator. The resistance estimator is coupled to the memory cell to estimate the resistance of the memory cell and outputs an estimated resistance level. According to the estimated resistance level, the write current generator generates a write current to flow through the memory cell and to change the resistance of the memory cell. The write current is in a pulse form, and the write current generator sets the pulse width, or magnitude, or both the pulse width and the magnitude of the write current according to the estimated resistance level. | 12-03-2009 |
20090294995 | OVERLAY MARK - An overlay mark applicable in a non-volatile memory includes two first X-direction isolation structures, two first Y-direction isolation structures, two second X-direction isolation structures, two second Y-direction isolation structures, a first dielectric layer, and a conductive layer. The first X-direction isolation structures, the first Y-direction isolation structures, the second X-direction isolation structures, and the second Y-direction isolation structures are disposed in a substrate. The first X-direction isolation structures and the first Y-direction isolation structures are arranged to a first rectangle, the second X-direction isolation structures and the second Y-direction isolation structures are arranged to a second rectangle, and the second rectangle is located in the first rectangle. The first dielectric layer is disposed on a surface of the substrate. The conductive layer is disposed on the first dielectric layer. | 12-03-2009 |
20090294750 | PHASE CHANGE MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME - An exemplary phase change memory device is provided, including a substrate with a first electrode formed thereover. A first dielectric layer is formed over the first electrode and the substrate. A plurality of cup-shaped heating electrodes is respectively disposed in a portion of the first dielectric layer. A first insulating layer is formed over the first dielectric layer, partially covering the cup-shaped heating electrodes and the first dielectric layer therebetween. A second insulating layer is formed over the first dielectric layer, partially covering the cup-shaped heating electrodes and the first dielectric layer therebetween. A pair of phase change material layers is respectively disposed on opposing sidewalls of the second insulating layer and contacting with one of the cup-shaped heating electrodes. A pair of first conductive layers is formed on the second insulating layer along the second direction, respectively. | 12-03-2009 |
20090267240 | METHOD OF MANUFACTURING AN OVERLAY MARK - A method of manufacturing an overlay mark is provided. Two first X-direction isolation structures, two first Y-direction isolation structures, two second X-direction isolation structures, and two second Y-direction isolation structures are formed in a substrate, where the first X-direction isolation structures and the first Y-direction isolation structures are arranged to a first rectangle, and the second X-direction isolation structures and the second Y-direction isolation structures are arranged to a second rectangle. The second rectangle is located in the first rectangle. A first dielectric layer and a conductive layer are formed sequentially on the substrate. A planarization process is performed to remove a portion of the conductive layer till the isolation structures are exposed. A second dielectric layer is formed on the substrate. A rectangle pattern is formed on the second dielectric layer. The sides of the rectangle pattern are located above the isolation structures. | 10-29-2009 |
20090257484 | METHOD FOR AUDIO-VIDEO ENCODING AND APPARATUS FOR MULTIMEDIA STORAGE - The invention relates a method for audio-video encoding and an apparatus for multimedia storage. First, a video chunk and an audio chunk are read from a audio-video file. Then the video chunk is divided into a plurality of video blocks, wherein size of each video block at least equals to the size of one unit frame. The audio chunk is divided into a plurality of audio blocks. Finally, according to a playing sequence, at least one audio block is employed between each two video blocks. | 10-15-2009 |
20090250691 | PHASE CHANGE MEMORY ELEMENT AND METHOD FOR FORMING THE SAME - A phase change memory and method for fabricating the same are provided. The phase change memory element includes: a substrate; rectangle-shaped dielectric patterns formed on the substrate and parallel with each other; electric conductive patterns partially covering a first sidewall and the top surface of the dielectric pattern and the substrate to expose the first sidewall and a second sidewall of the dielectric pattern, wherein the electric conductive patterns covering the same dielectric pattern are apart from each other; a phase change spacer formed on the substrate and directly in contact with the exposed first and second sidewalls of the dielectric patterns, wherein the two adjacent electric conductive patterns covering the same dielectric pattern are electrically connected by the phase change spacer; and a dielectric layer formed on the substrate. | 10-08-2009 |
20090231940 | MEMORY AND VOLTAGE MONITORING DEVICE THEREOF - A memory and a voltage monitoring device thereof are provided. the voltage monitoring device of the memory includes a system voltage detector, a charge pump circuit and a data output unit. The system voltage detector is coupled to the charge pump circuit and the data output unit for detecting a system voltage and thereby producing control signals. The charge pump circuit can produce a word line voltage according to the above-mentioned control signals. The data output unit decides outputting the above-mentioned control signals or the output data of the memory according to a special command, wherein the control signals correspond to the word line voltages. Therefore, the control signals and the word line voltages may be easily monitored. | 09-17-2009 |
20090191367 | MEMORY DEVICES, STYLUS-SHAPED STRUCTURES, ELECTRONIC APPARATUSES, AND METHODS FOR FABRICATING THE SAME - An exemplary hollow stylus-shaped structure is disclosed, including a hollow column spacer formed over a base layer and a hollow cone spacer stacked over the hollow column spacer, wherein the hollow cone spacer, the hollow column spacer, and the base layer form a space, and sidewalls of the hollow cone spacer and the hollow column spacer are made of silicon-containing organic or inorganic materials. | 07-30-2009 |
20090189142 | Phase-Change Memory - A phase-change memory element with side-wall contacts is disclosed, which has a bottom electrode. A non-metallic layer is formed on the electrode, exposing the periphery of the top surface of the electrode. A first electrical contact is on the non-metallic layer to connect the electrode. A dielectric layer is on and covering the first electrical contact. A second electrical contact is on the dielectric layer. An opening is to pass through the second electrical contact, the dielectric layer, and the first electrical contact and preferably separated from the electrode by the non-metallic layer. A phase-change material is to occupy one portion of the opening, wherein the first and second electrical contacts interface the phase-change material at the side-walls of the phase-change material. A second non-metallic layer may be formed on the second electrical contact. A top electrode contacts the top surface of the outstanding terminal of the second electrical contact. | 07-30-2009 |
20090189140 | PHASE-CHANGE MEMORY ELEMENT - A phase-change memory element with side-wall contacts is disclosed. The phase-change memory element comprises a bottom electrode. A first dielectric layer is formed on the bottom electrode. A first electrical contact is formed on the first dielectric layer and electrically connects to the bottom electrode. A second dielectric layer is formed on the first electrical contact. A second electrical contact is formed on the second dielectric layer, wherein the second electrical contact comprises an outstanding terminal. An opening passes through the second electrical contact, the second dielectric layer, and the first electrical contact. A phase-change material occupies at least one portion of the opening. A third dielectric layer is formed on and covers the second electrical contact, exposing a top surface of outstanding terminal. A top electrode is formed on the third dielectric layer, contacting the outstanding terminal. | 07-30-2009 |
20090174470 | LATCH-UP PROTECTION DEVICE - A latch-up protection device is provided. The latch-up protection device includes a first transistor, a detection module, and a processing module. The first transistor includes a first source/drain coupled to a pad, a body and a second source/drain coupled to a first voltage, and a gate. The detection module is adapted for detecting a terminal voltage between the first source/drain and the second source/drain of the first transistor, and generating a first signal when the terminal voltage is greater than a trigger voltage. The processing module is coupled between the detection module and the gate of the first transistor, for conducting a logic processing to the first signal, and generating an enable signal to the gate of the first transistor to conduct the first transistor. | 07-09-2009 |
20090169100 | MOTION-ORIENTED IMAGE COMPENSATING METHOD - A motion-oriented image compensating method is disclosed. The method uses the pixel luminance of a present image data and a last image data to judge the minimum motion vector in X-axis and the minimum motion vector in Y-axis of the present image data, following by conducting luminance compensation of the pixels according to the above-mentioned two minimum motion vectors to advance the sharpness of image edges and thereby the image quality. | 07-02-2009 |
20090164869 | MEMORY ARCHITECTURE AND CONFIGURATION METHOD THEREOF - A memory architecture and a configuration method thereof are provided. In the memory configuration method, a data to be stored in the memory and a corresponding error correction code (ECC) are first provided. When the data is written into the memory, the ECC is stored next to the corresponding data, such that the ECC and the corresponding data can be adjoined with each other in the memory. As a result, when the data is read from the memory, the data and the corresponding ECC can be obtained in turn, so as to achieve the purpose of checking the correctness of the data with a smaller buffer, and the hardware cost of the buffer can also be reduced. | 06-25-2009 |
20090147566 | Phase Change Memory And Control Method Thereof - A phase change memory wherein several phase change storage elements are coupled in series to share a single current source. The current provided by the current source is directed by a plurality of switches. To write/read the phase change storage elements, the invention provides techniques to control the current value generated by the current source and controls the states of the switches. The impedance summation of the phase change storage elements vary with the data stored therein. | 06-11-2009 |
20090146127 | PHASE CHANGE MEMORY - Phase change memories comprising a top electrode, a phase change element, a plurality of via holes allocated between the top electrode and the phase change element, at least four heaters aiming at different regions of the phase change element, and a plurality of bottom electrodes and transistors corresponding to the heaters. The bottom electrodes are respectively coupled to the heaters. Regarding the transistors, their first terminals are respectively coupled to the bottom electrodes, their control terminals are used for coupling to word lines, and their second terminals are used for coupling to bit lines. In an embodiment with four heaters, the regions the heaters aimed at the phase change element form a 2×2 storage array. | 06-11-2009 |
20090141548 | MEMORY AND METHOD FOR DISSIPATION CAUSED BY CURRENT LEAKAGE - Memories with low power consumption and methods for suppressing current leakage of a memory. The memory cell of the memory has a storage element and a transistor coupled in series. The invention sets a voltage across the transistor approaching to zero when the memory is not been accessed. | 06-04-2009 |
20090122599 | WRITING SYSTEM AND METHOD FOR PHASE CHANGE MOMORY - An embodiment of a writing system for a phase change memory based on a present application is disclosed. The writing system comprises a first phase change memory (PCM) cell, a second PCM cell, a first writing circuit and a verifying circuit. The first writing circuit executes a writing procedure, receives and writes a first data to the first PCM cell. The verifying circuit executes a verifying procedure and the circuit further comprises a processing unit and a second writing circuit. The processing unit reads and compares the data stored in the second PCM cell with a second data. The second writing circuit writes the second data to the second PCM cell when the data stored in the second PCM cell and the second data are not matched. | 05-14-2009 |
20090103381 | ASYNCHRONOUS SENSE AMPLIFIER FOR READ ONLY MEMORY - The asynchronous sense amplifier for a ROM comprises a current-mirror circuit, a first negative feedback inverter, a second negative feedback inverter, a first transistor group, a second transistor group and a feedback transistor. The feedback transistor connects the junction of the first transistor group and the first set of the current-mirror circuit and/or the junction of the second transistor group and the second set of the current-mirror circuit to ground, where the feedback transistor is controlled by the output of the first negative feedback inverter and/or the second negative feedback inverter, and the feedback transistor is smaller than one transistor of the second transistor group. | 04-23-2009 |
20090101884 | PHASE CHANGE MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME - Phase change memory devices and methods for fabricating the same are provided. A phase change memory device includes a first conductive electrode disposed in a first dielectric layer. A second dielectric layer is disposed over the first dielectric layer. A phase change material layer is disposed in the second dielectric layer and electrically connected to the first conductive electrode. A space is disposed in the second dielectric layer to at least isolate a sidewall of the phase change material layer and the second dielectric layer adjacent thereto. A second conductive electrode is disposed in the second dielectric layer and electrically connected to the phase change material layer. | 04-23-2009 |
20090101880 | PHASE CHANGE MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME - An exemplary memory device includes a first dielectric layer with a first conductive contact therein. A phase change material (PCM) is disposed on top of the first dielectric layer and provided with an insulating layer integrally on a top surface of the PCM. A first electrode is disposed over the first dielectric layer and covered a portion of the first conductive contact and the insulating layer in a first direction, contacting to the first conductive contact and a first side of the PCM. A second electrode is disposed over the first dielectric layer and covered a portion of the insulating layer in a second direction, contacting to a second side of the PCM. A second dielectric layer is disposed over the first dielectric layer to cover the first electrode, the second electrode, the insulating layer and the PCM, including a second conductive contact connected to the second electrode. | 04-23-2009 |
20090091389 | LVDS RECEIVER CIRCUIT - The LVDS receiver circuit comprises a differential-input transistor pair, a control transistor pair, a current-mirror-load circuit, a first feedback inverter and a second feedback inverter. The first feedback inverter, the second feedback inverter and the control transistor pair constitute a feedback loop. The voltage change of the input voltage of the first feedback inverter is suppressed, and the input voltage is controlled around the threshold voltage of the first feedback inverter. | 04-09-2009 |
20090080243 | DEVICE CONTROLLING PHASE CHANGE STORAGE ELEMENT AND METHOD THEREOF - Devices controlling a phase change storage element and methods for increasing reliability of a phase change storage element. The invention introduces a first operation mode and a second operation mode. A reference phase change storage element is forced a write current for an ideal conduction period in the first operation mode. In the second operation mode, the invention generates a proper conduction period based on the resistance of the reference phase change storage element, and forces the write current into the controlled phase change storage element for the proper conduction period. | 03-26-2009 |
20090078926 | PHASE CHANGE MEMORY DEVICE AND FABRICATION METHOD THEREOF - A phase change memory device comprising an electrode, a phase change layer crossing and contacting the electrode at a cross region thereof, and a transistor comprising a source and a drain, wherein the drain of the transistor electrically connects the electrode or the phase change layer is disclosed. | 03-26-2009 |
20090065758 | PHASE CHANGE MEMORY ARRAY AND FABRICATION THEREOF - A phase change memory array is disclosed, comprising a first cell having a patterned phase change layer, and a second cell having a patterned phase change layer, wherein the patterned phase change layer of the first cell and the patterned phase change layer of the second cell are disposed at different layers. | 03-12-2009 |
20090059454 | CURRENT LIMIT PROTECTION APPARATUS AND METHOD FOR CURRENT LIMIT PROTECTION - A current limit protection apparatus and a method for current limit protection are provided. The current limit protection apparatus includes a MOS transistor, a current detecting unit, and a current limit circuit. Two source/drain of the MOS transistor are used for receiving a first-voltage and outputting a second-voltage respectively. A gate of the MOS transistor is used for receiving a gate driving signal to determine a conducting current of the MOS transistor. The current detecting unit is used for detecting the conducting current, so as to generate a detecting result. The current limit circuit has a plurality of current threshold values. The current limit circuit selects one of the current threshold values according to an indicating signal and generates the gate driving signal according to a difference between the selected current threshold value and the detecting result. | 03-05-2009 |
20090057643 | PHASE CHANGE MEMORY DEVICE AND FABRICATION METHOD THEREOF - A phase change memory device is disclosed. A second conductive spacer is under a first conductive spacer. A phase change layer comprises a first portion substantially parallel to the first and second conductive spacers and a second portion on top of the second conductive spacer, wherein the second conductive spacer is electrically connected to the first conductive spacer through the second portion of the phase change layer. | 03-05-2009 |
20090057640 | PHASE-CHANGE MEMORY ELEMENT - A phase-change memory element and fabrication method thereof is provided. The phase-change memory element comprises an electrode. A first dielectric layer is formed on the substrate. An opening passes through the first dielectric layer exposing the electrode. A heater with an extended part is formed in the opening, wherein the extended part protrudes the opening. A second dielectric layer surrounds the extended part of the heater exposing the top surface of the extended part. A phase-changed material layer is formed on the second dielectric layer to directly contact the top of the extended part. | 03-05-2009 |
20090045386 | Phase-change memory element - A phase-change memory element. The phase-change memory element comprises a first electrode and a second electrode. A first phase change layer is electrically coupled to the first electrode. A second phase change layer is electrically coupled to the second electrode. A conductive bridge is formed between and electrically coupled to the first and second phase change layers. | 02-19-2009 |
20090043521 | TRANSISTOR CIRCUIT WITH ESTIMATING PARAMETER ERROR AND TEMPERATURE SENSING APPARATUS USING THE SAME - A transistor circuit with estimating parameter error and temperature sensing apparatus using the same are provided. The temperature sensing apparatus measures and calculates a parameter error of transistor which is driven by different currents in advance. And the temperature sensing apparatus compensates an error occurred during temperature measurement using the acquired the parameter error so as to obtain an accurate environment temperature. | 02-12-2009 |
20090036030 | POLISHING HEAD AND CHEMICAL MECHANICAL POLISHING PROCESS USING THE SAME - A polishing head for a chemical mechanical polishing process is provided. The polishing head includes an inner circle part and an outer circle part. The outer circle part is a ring-like structure that is connected to the inner circle part. The inner circle part and the outer circle part are an integrated structure. There is a level difference between the respective surfaces of the outer circle part and the inner circle part. Further, the surface of the outer circle part is higher than that of the inner circle part. | 02-05-2009 |
20090032794 | PHASE CHANGE MEMORY DEVICE AND FABRICATION METHOD THEREOF - A phase change memory device is disclosed. A first dielectric layer having a sidewall is provided. A bottom electrode is adjacent to the sidewall of the first dielectric layer, wherein the bottom electrode comprises a seed layer and a conductive layer. A second dielectric layer is adjacent to a side of the bottom electrode opposite the sidewall of the first dielectric layer. A top electrode couples the bottom electrode through a phase change layer. | 02-05-2009 |
20090014705 | PHASE CHANGE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A phase change memory device is provided. The phase change memory device comprises a substrate. A first conductive layer is formed on the substrate. A heating electrode is formed on the first conductive layer, and electrically connected to the first conductive layer, wherein the heating electrode comprises a carbon nanotube (CNT). A phase change material layer covers the heating electrode. A second conductive layer is formed on the phase change material layer, and electrically connected to the phase change material layer. | 01-15-2009 |
20090010047 | WRITING CIRCUIT FOR A PHASE CHANGE MEMORY - A phase change memory writing circuit is provided. The circuit comprises a writing path and a fast write control unit. The writing path further comprises a current driving unit, a first switch device and a phase change memory cell. The current driving unit is coupled to a high voltage source and outputs a driving current. The first switch device is controlled by a first control signal. The fast write control unit is coupled to the writing path to provide a writing voltage to the writing path. When the first switch device is turned off, the fast write control unit outputs the writing voltage to the writing path. When the first switch device is turned on, the fast write control unit stops outputting the writing voltage to the writing path. | 01-08-2009 |
20090008621 | PHASE-CHANGE MEMORY ELEMENT - A phase-change memory element is provided. The phase-change memory element of an embodiment of the invention comprises a phase-change material layer with a concave, and a heater with an extended part, wherein the extended part of the heater is wedged in the concave of the phase-change material layer. Specifically, the extended part of the heater has a length of 10˜5000 Å. | 01-08-2009 |
20080316847 | SENSING CIRCUIT OF A PHASE CHANGE MEMORY AND SENSING METHOD THEREOF - A sensing circuit of a phase change memory. The sensing circuit comprises a storage capacitor and a reference capacitor, a storage memory device and a reference memory device, a storage discharge switch and a reference discharge switch, and an arbitrator. First terminals of the storage capacitor and the reference capacitor are respectively coupled to a pre-charge voltage via first switches. First terminals of the storage memory device and the reference memory device are respectively coupled to the first terminals of the storage capacitor and the reference capacitor. The storage discharge switch and the reference discharge switch are respectively coupled to second terminals of the storage memory device and the reference memory device. The arbitrator is coupled to the first terminals of the storage memory device and the reference memory device and provides an output as a read result of the storage memory device. | 12-25-2008 |
20080316803 | SENSING CIRCUIT OF A PHASE CHANGE MEMORY AND SENSING METHOD THEREOF - A sensing circuit of a phase change memory. The sensing circuit comprises a data current source and a reference current source, a storage memory device and a reference memory device, a storage switch and a reference switch, an auxiliary current source and a comparator. First terminals of the storage memory device and the reference memory device are respectively coupled to the data current source and the reference current source. The storage switch and the reference switch are respectively coupled to second terminals of the storage memory device and the reference memory device. The auxiliary current source is dynamically coupled to the first terminals of the storage memory device and the reference memory device. The comparator is coupled to the first terminals of the storage memory device and the reference memory device. | 12-25-2008 |
20080311699 | PHASE-CHANGE MEMORY AND FABRICATION METHOD THEREOF - A phase-change memory comprises a bottom electrode formed on a substrate. A first isolation layer is formed on the bottom electrode. A top electrode is formed on the isolation layer. A first phase-change material is formed in the first isolation layer, wherein the top electrode and the bottom electrode are electrically connected via the first phase-change material. Since the phase-change material can have a diameter less than the resolution limit of the photolithography process, an operating current for a state conversion of the phase-change material pattern may be reduced so as to decrease a power dissipation of the phase-change memory device. | 12-18-2008 |
20080307236 | METHOD AND APPARATUS FOR PASSWORD OUTPUT - A method and an apparatus for account and/or password output are disclosed. In the present invention, a hot-key corresponding to an account and/or a password is set in advance. By entering the hot-key, the related account and/or password is transferred and login automatically, thus the purpose of making login more conveniently is achieved. Besides, the present invention combines various input device to make the way of setting hot-key become more diversely, therefore security of password login is also enhanced. | 12-11-2008 |
20080296554 | PHASE CHANGE MEMORY DEVICES AND FABRICATION METHODS THEREOF - Phase change memory devices and fabrication methods thereof. A phase change memory device includes an array of phase change memory cells. Each phase change memory cell includes a selecting transistor disposed on a substrate. An upright electrode structure is electrically connected to the selecting transistor. An upright phase change memory layer is stacked on the upright electrode structure with a contact area therebetween, wherein the contact area serves as the location where phase transition takes place. | 12-04-2008 |
20080296552 | PHASE CHANGE MEMORY CELL STRUCTURES AND METHODS FOR MANUFACTURING THE SAME - Phase change memory cell structures and methods for fabricating the same are provided. An exemplary embodiment of a phase change memory cell structure includes a first electrode formed over a first dielectric layer. A second dielectric layer is formed over the first electrode. A conductive member is formed through the second dielectric layer and electrically contacting the first electrode, wherein the conductive member comprises a lower element and an upper element sequentially stacking over the first electrode, and the lower and upper elements comprises different materials. A phase change material layer is formed over the second dielectric layer, electrically contacting the conductive member. A second electrode is formed over the phase change material layer. | 12-04-2008 |
20080290335 | PHASE CHANGE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A phase change memory device comprising a substrate. A plurality of bottom electrodes isolated from each other is on the substrate. An insulating layer crosses a portion of the surfaces of any two of the adjacent bottom electrodes. A pair of phase change material spacers is on a pair of sidewalls of the insulating layer, wherein the pair of the phase change material spacers is on any two of the adjacent bottom electrodes, respectively. A top electrode is on the insulating layer and covers the phase change material spacers. | 11-27-2008 |
20080283814 | PHASE-CHANGE MEMORY ELEMENT - A phase-change memory element for reducing heat loss is disclosed. The phase-change memory element comprises a composite layer, wherein the composite layer comprises a dielectric material and a low thermal conductivity material. A via hole is formed within the composite layer. A phase-change material occupies at least one portion of the via hole. The composite layer comprises alternating layers or a mixture of the dielectric material and the low thermal conductivity material. | 11-20-2008 |
20080283812 | PHASE-CHANGE MEMORY ELEMENT - A phase-change memory element. The phase-change memory comprises first and second electrodes. A phase-change material layer is formed between the first and second electrodes. And a carbon-doped oxide dielectric layer is formed to surround the phase-change material layer, wherein the first electrode electrically connects the second electrodes via the phase-change material layer. | 11-20-2008 |
20080272358 | PHASE CHANGE MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME - Phase change memory devices and methods for manufacturing the same are provided. An exemplary embodiment of a phase change memory device includes a bottom electrode formed over a substrate. A first dielectric layer is formed over the bottom electrode. A heating electrode is formed in the first dielectric layer and partially protrudes over the first dielectric layer, wherein the heating electrode includes an intrinsic portion embedded within the first dielectric layer, a reduced portion stacked over the intrinsic portion, and an oxide spacer surrounding a sidewall of the reduced portion. A phase change material layer is formed over the first dielectric layer and covers the heating electrode, the phase change material layer contacts a top surface of the reduced portion of the heating electrode. A top electrode is formed over the phase change material layer and contacts the phase change material layer. | 11-06-2008 |
20080265849 | CONTROL APPARATUS OF POWER CONVERSION CIRCUIT AND CONTROL METHOD THEREOF - A control apparatus for a power conversion circuit and a control method thereof are provided. The method of the control apparatus includes producing a first control signal and a second control signal; modulating the first control signal according to an output voltage of the power conversion circuit; detecting the output voltage of the power conversion circuit to attain a detecting result; if the detecting result exhibits the input voltage of the power conversion circuit below a normal operating level, using the second control signal to control the power conversion circuit; or if the detecting result exhibits the input voltage of the power conversion circuit above the normal operating level, using the first control signal to control the power conversion circuit. The duty cycle of the fist control signal is greater than that of the second control signal. | 10-30-2008 |
20080265238 | PHASE CHANGE MEMORY DEVICES AND METHODS FOR MANUFACTURING THE SAME - Phase change memory devices and methods for manufacturing the same are provided. An exemplary embodiment of a phase change memory device includes a first electrode disposed in a first dielectric layer. A second dielectric layer is disposed over the first dielectric layer and the first electrode. A phase change material layer disposed in the second dielectric layer to electrically contact the first electrode. A third dielectric layer is disposed over the second dielectric layer. A second electrode is disposed in the third dielectric layer to electrically connect the phase change material layer and at least one gap disposed in the first dielectric layer or the second dielectric layer to thereby isolate portions of the phase change material layer and portions of the first or second dielectric layer adjacent thereto. | 10-30-2008 |
20080258834 | PULSE WIDTH MODULATION CIRCUIT - A pulse width modulation (PWM) circuit includes a turn on/off switch and a PWM controller. The first terminal of the turn on/off switch is coupled to a turn off voltage. The control terminal of the turn on/off switch receives a turn on/off signal to decide whether the circuit between the first terminal and the second terminal of the turn on/off switch is turned on or not. The PWM controller includes a PWM pin and a turn on/off device. The PWM pin is coupled to the second terminal of the turn on/off switch to output a PWM signal. The turn on/off device is coupled to the PWM pin to decide the turn on/off of the PWM controller according to a signal swing state of the PWM pin. | 10-23-2008 |
20080258223 | ESD PROTECTION DEVICE - An ESD protection device is provided. The ESD protection device of the present invention includes a semiconductor substrate/well, a first doped region, a second doped region and a third doped region. The first doped region doped with a first dopant is disposed in the semiconductor substrate/well. The second doped region doped with a second dopant is disposed in the semiconductor substrate/well, wherein a predetermined distance is maintained between the second doped region and the first doped region. The third doped region doped with the second dopant is disposed in the first doped region. The ESD protection device of the present invention is adapted for solving the reverse recovery problem of the conventional diode during the bipolar type ESD stressing. | 10-23-2008 |
20080251498 | PHASE CHANGE MEMORY DEVICE AND FABRICATIONS THEREOF - A method for forming a memory device is disclosed. A dielectric layer is formed on a substrate. A Sn doped phase change layer is formed on the dielectric layer. A patterned mask layer is formed on the Sn doped phase change layer. The Sn doped phase change layer is etched by an etchant comprising fluorine-based etchant added with chlorine using the patterned mask layer as a mask to pattern the Sn doped phase change layer. An electrode is formed, electrically connecting the patterned Sn doped phase change layer. | 10-16-2008 |
20080241741 | PHASE CHANGE MEMORY DEVICES AND METHODS FOR MANUFACTURING THE SAME - Phase change memory devices and methods for manufacturing the same are provided. An exemplary embodiment of a phase change memory device comprises a substrate. A dielectric layer is formed over the substrate and a phase change material layer is embedded in the dielectric layer. A first conductive electrode is also embedded in the dielectric layer to penetrate the phase change material layer and extends perpendicular to a top surface of the dielectric layer. | 10-02-2008 |
20080239798 | Compensation circuit and memory with the same - One embodiment of the invention provides a compensation circuit. The compensation circuit comprises a writing driver, a distance detection circuit, an operating element and an auxiliary writing driver. The writing driver provides a writing current to a writing path. The distance detection circuit is coupled to the writing path to detect a distance that the writing current has travelled and outputs a control signal based on the distance. The operating element is coupled to the writing path. The auxiliary writing driver provides an auxiliary current to the writing path based on the control signal. | 10-02-2008 |
20080237562 | PHASE CHANGE MEMORY DEVICES AND FABRICATION METHODS THEREOF - Phase change memory devices and fabrication methods thereof. A phase change memory device comprises a stacked heating element with a conductive portion and a relatively high resistive portion, wherein the relatively high resistive portion includes a nitrogen-containing metal silicide part. The heating stacked element such as a highly resistive nitrogen-containing metal silicide (MSi | 10-02-2008 |
20080219046 | Writing method and system for a phase change memory - A writing method for a phase change memory is disclosed. The writing method inputs a first writing pulse signal to a phase change memory to heat the phase change memory to above a first temperature and inputting a second writing pulse signal to the phase change memory to keep the phase change memory at a second temperature. | 09-11-2008 |
20080203374 | Phase-change memory and fabrication method thereof - A phase-change memory is provided. The phase-change memory comprises a substrate. A first electrode is formed on the substrate. A circular or linear phase-change layer is electrically connected to the first electrode. A second electrode formed on the phase-change layer and electrically connected to the phase-change layer, wherein at least one of the first electrode and the second electrode comprises phase-change material. | 08-28-2008 |
20080197335 | Semiconductor device and fabrications thereof - A memory device is disclosed. A pillar structure comprises a first electrode layer, a dielectric layer overlying the first electrode layer, and a second electrode layer overlying the dielectric layer. A phase change layer covers a surrounding of the pillar structure. A bottom electrode electrically connects the first electrode layer of the pillar structure. A top electrode electrically connects the second electrode layer of the pillar structure. | 08-21-2008 |