VEECO INSTRUMENTS INC. Patent applications |
Patent application number | Title | Published |
20160126123 | Method For Improving Performance Of A Substrate Carrier - A method of modifying a substrate carrier to improve process performance includes depositing material or fabricating devices on a substrate supported by a substrate carrier. A parameter of layers deposited on the substrate is then measured as a function of their corresponding positions on the substrate carrier. The measured parameter of at least some devices fabricated on the substrate or a property of the deposited layers is related to a physical characteristic of substrate carrier to obtain a plurality of physical characteristics of the substrate carrier corresponding to a plurality of positions on the substrate carrier. The physical characteristic of the substrate carrier is then modified at one or more of the plurality of corresponding positions on the substrate carrier to obtain desired parameters of the deposited layers or fabricated devices as a function of position on the substrate carrier. | 05-05-2016 |
20160071708 | METHOD AND APPARATUS FOR SURFACE PROCESSING OF A SUBSTRATE USING AN ENERGETIC PARTICLE BEAM - Method and apparatus for processing a substrate with an energetic particle beam. Features on the substrate are oriented relative to the energetic particle beam and the substrate is scanned through the energetic particle beam. The substrate is periodically indexed about its azimuthal axis of symmetry, while shielded from exposure to the energetic particle beam, to reorient the features relative to the major dimension of the beam. | 03-10-2016 |
20150361582 | Gas Flow Flange For A Rotating Disk Reactor For Chemical Vapor Deposition - A gas flow flange includes a first and a second section. The first section includes a plurality of first gas channels positioned inside and parallel to a top surface. A plurality of second gas input channels are positioned perpendicular to the top surface and extending from the top surface to the bottom surface. Each of the plurality of first gas input channels are aligned with an output of a corresponding one of the plurality of first gas input channels. The second section includes a plurality of second gas input channels that are positioned perpendicular to and extending from the top surface to the bottom surface of the second section. Each of the plurality of second gas input channels are aligned with a corresponding one of the plurality of second gas input channels. Fluid cooling conduits are positioned perpendicular to the top surface of the second section. | 12-17-2015 |
20150262789 | METHOD FOR INCREASED TARGET UTILIZATION IN ION BEAM DEPOSITION TOOLS - In a sputter deposition tool ( | 09-17-2015 |
20150075431 | Rotating Disk Reactor With Ferrofluid Seal For Chemical Vapor Deposition - A rotating disk reactor for chemical vapor deposition includes a vacuum chamber and a ferrofluid feedthrough comprising an upper and a lower ferrofluid seal that passes a motor shaft into the vacuum chamber. A motor is coupled to the motor shaft and is positioned in an atmospheric region between the upper and the lower ferrofluid seal. A turntable is positioned in the vacuum chamber and is coupled to the motor shaft so that the motor rotates the turntable at a desired rotation rate. A dielectric support is coupled to the turntable so that the turntable rotates the dielectric support when driven by the shaft. A substrate carrier is positioned on the dielectric support in the vacuum chamber for chemical vapor deposition processing. A heater is positioned proximate to the substrate carrier that controls the temperature of the substrate carrier to a desired temperature for chemical vapor deposition. | 03-19-2015 |
20150056790 | CHEMICAL VAPOR DEPOSITION WITH ELEVATED TEMPERATURE GAS INJECTION - A chemical vapor deposition reactor and method. Reactive gases, such as gases including a Group III metal source and a Group V metal source, are introduced into the chamber ( | 02-26-2015 |
20140341796 | DUAL-SIDE WAFER BAR GRINDING - A dual-side wafer bar grinding method and apparatus is disclosed herein that slices wafer bars from a wafer block for use in manufacturing thin film magnetic heads, for example. By grinding opposing faces of the wafer bars sliced from the wafer block, variations in flatness, perpendicularity, surface finish, and/or overall dimensions are improved. | 11-20-2014 |
20140261698 | WAFER CARRIER WITH TEMPERATURE DISTRIBUTION CONTROL - Wafer carrier arranged to hold a plurality wafers and to inject a fill gas into gaps between the wafers and the wafer carrier for enhanced heat transfer and to promote uniform temperature of the wafers. The apparatus is arranged to vary the composition, flow rate, or both of the fill gas so as to counteract undesired patterns of temperature non-uniformity of the wafers. In various embodiments, the wafer carrier utilizes at least one plenum structure contained within the wafer carrier to source a plurality of weep holes for passing a fill gas into the wafer retention pockets of the wafer carrier. The plenum(s) promote the uniformity of the flow, thus providing efficient heat transfer and enhanced uniformity of wafer temperatures. | 09-18-2014 |
20140190405 | SELF-CLEANING SHUTTER FOR CVD REACTOR - A chemical vapor deposition reactor and a method of wafer processing are provided. The reactor can include a reaction chamber having an interior and an entry port for insertion and removal of substrates, a gas inlet manifold communicating with the interior of the chamber for admitting process gasses to form a deposit on substrates held within the interior, a shutter mounted to the chamber, and one or more cleaning elements mounted within the chamber. The shutter can be movable between (i) a run position in which the cleaning elements are remote from the exhaust channel and (ii) a cleaning position in which the one or more cleaning elements engage with the shutter so that the cleaning elements remove deposited particles from the shutter upon movement of the shutter to the cleaning position. | 07-10-2014 |
20140133950 | Insertion/Extraction Tool For Components In Housing - An insertion/extraction tool for inserting and extracting components in a housing includes a clamp member that attaches to a component in the housing. A lift member includes a bearing attached to the clamp member. A bridge includes a threaded member attached to the clamp member with a lead screw. The lead screw is threaded through the threaded member in the bridge and terminated at the bearing attached to the clamp member. The lead screw raises and lowers the lift member as it rotates, thereby translating the component relative to the housing. | 05-15-2014 |
20140116330 | CHEMICAL VAPOR DEPOSITION FLOW INLET ELEMENTS AND METHODS - A flow inlet element for a chemical vapor deposition reactor is formed from a plurality of elongated tubular elements extending side-by-side with one another in a plane transverse to the upstream to downstream direction of the reactor. The tubular elements have inlets for ejecting gas in the downstream direction. A wafer carrier rotates around an upstream to downstream axis. The gas distribution elements may provide a pattern of gas distribution which is asymmetrical with respect to a medial plane extending through the axis. | 05-01-2014 |
20140060153 | APPARATUS AND METHOD FOR IMPROVED ACOUSTICAL TRANSFORMATION - An acoustical transformer having a last matching section that includes a protective barrier of low permeability. The protective barrier is in contact with a test medium. In one embodiment, the protective barrier comprises one or more low permeability layers, such as a metallic foil or metallic coating(s) disposed on a low impedance layer such as polyimide, so that the low impedance layer and the protective barrier constitute the last matching section of the acoustical transformer. In other embodiments, the protective barrier comprises a fluoropolymer. A method for determining the thicknesses of the various layers of the acoustical transformer for enhanced performance is also disclosed. | 03-06-2014 |
20140042147 | TERMINAL FOR MECHANICAL SUPPORT OF A HEATING ELEMENT - A terminal for mechanical support of a heating element, includes a base device, a mounting device, the mounting device adapted to support the heating element, and a support device connecting the base device to the mounting device, the support device allowing displacement of the heating element about a radial axis and less than about 10% displacement of the heating element about a tangential and/or axial axis. | 02-13-2014 |
20140041589 | HEATING ELEMENT FOR A PLANAR HEATER OF A MOCVD REACTOR - A heating element includes a heating body which is directly covered at least partly with a porous sintered coating, wherein the heating body and the porous sintered coating each includes at least 90% by weight of tungsten. | 02-13-2014 |
20140014497 | Film Deposition Assisted by Angular Selective Etch on a Surface - An ion etch assisted deposition apparatus deposits a thin film upon a substrate having a three dimensional feature, using an ion etching source and deposition source arranged at similar angles relative to the substrate and at an angle α relative to each other. The angle α is selected to be substantially equal the supplement of the angle α′ formed between the three dimensional feature on the substrate and the substrate surface. In this configuration the relative flux of energetic etch ions and deposition atoms is adjusted to prevent the growth of poor quality deposited material. | 01-16-2014 |
20130343426 | TEMPERATURE CONTROL FOR GaN BASED MATERIALS - A method of in-situ temperature measurement for a wafer treatment reactor such as a chemical vapor deposition reactor desirably includes the steps of heating the reactor until the reactor reaches a wafer treatment temperature and rotating a wafer support element within the reactor about a rotational axis. The method desirably further includes, while the wafer support element is rotating about the rotational axis, obtaining first operating temperature measurements using a first operating pyrometer that receives radiation from a first portion of the wafer support element, and obtaining first wafer temperature measurements using a wafer temperature measurement device that receives radiation from at least one wafer, the wafer temperature measurement device located at a first position. | 12-26-2013 |
20130284091 | Method For Improving Performance Of A Substrate Carrier - A method of modifying a substrate carrier to improve process performance includes depositing material or fabricating devices on a substrate supported by a substrate carrier. A parameter of layers deposited on the substrate is then measured as a function of their corresponding positions on the substrate carrier. The measured parameter of at least some devices fabricated on the substrate or a property of the deposited layers is related to a physical characteristic of substrate carrier to obtain a plurality of physical characteristics of the substrate carrier corresponding to a plurality of positions on the substrate carrier. The physical characteristic of the substrate carrier is then modified at one or more of the plurality of corresponding positions on the substrate carrier to obtain desired parameters of the deposited layers or fabricated devices as a function of position on the substrate carrier. | 10-31-2013 |
20130252404 | KEYED WAFER CARRIER - A structure for a chemical vapor deposition reactor desirably includes a reaction chamber having an interior, a spindle mounted in the reaction chamber, and a wafer carrier releasably mounted onto the spindle for rotation therewith. The spindle desirably has a shaft extending along a vertical rotational axis and a key projecting outwardly from the shaft. The wafer carrier preferably has a body defining oppositely-facing top and bottom surfaces and at least one wafer-holding feature configured so that a wafer can be held therein with a surface of the wafer exposed at the top surface of the body. The wafer carrier desirably further has a recess extending into the body from the bottom surface of the body and a keyway projecting outwardly from a periphery of the recess along a first transverse axis. The shaft preferably is engaged in the recess and the key preferably is engaged into the keyway. | 09-26-2013 |
20130226335 | Automated Cassette-To-Cassette Substrate Handling System - An automated cassette-to-cassette substrate handling system includes a cassette storage module for storing a plurality of substrates in cassettes before and after processing. A substrate carrier storage module stores a plurality of substrate carriers. A substrate carrier loading/unloading module loads substrates from the cassette storage module onto the plurality of substrate carriers and unloads substrates from the plurality of substrate carriers to the cassette storage module. A transport mechanism transports the plurality of substrates between the cassette storage module and the plurality of substrate carriers and transports the plurality of substrate carriers between the substrate carrier loading/unloading module and a processing chamber. A vision system recognizes recesses in the plurality of substrate carriers corresponding to empty substrate positions in the substrate carrier. A processor receives data from the vision system and instructs the transport mechanism to transport substrates to positions on the substrate carrier in response to the received data. | 08-29-2013 |
20130206583 | Method and Apparatus for Surface Processing of a Substrate Using an Energetic Particle Beam - Method and apparatus for processing a substrate with an energetic particle beam. Features on the substrate are oriented relative to the energetic particle beam and the substrate is scanned through the energetic particle beam. The substrate is periodically indexed about its azimuthal axis of symmetry, while shielded from exposure to the energetic particle beam, to reorient the features relative to the major dimension of the beam. | 08-15-2013 |
20130122252 | ION BEAM DEPOSITION OF FLUORINE-BASED OPTICAL FILMS - The presently disclosed technology uses dissociated fluorine and one or both of hydrogen and oxygen to assist the deposition of metal-fluoride thin films having low optical losses using ion sputter deposition. The dissociated fluorine and one or both of hydrogen and oxygen are injected into an enclosure within which the sputter deposition operations occur. The dissociated fluorine and one or both of hydrogen and oxygen assist the sputtering of metal-fluoride material from a target and/or deposition of the sputtered metal-fluoride on one or more substrates. | 05-16-2013 |
20130037725 | GRID PROVIDING BEAMLET STEERING - A grid assembly coupled to a discharge chamber of an ion beam source is configured for steering ion beamlets emitted from the discharge chamber at circularly asymmetrically determined steering angles. The grid assembly includes at least first and a second grid with a substantially circular pattern of holes, wherein each grid comprises holes positioned adjacent to one another. A plurality of the holes of the second grid is positioned with offsets relative to corresponding holes in the first grid. Due to the offsets in the holes in the second grid, ions passing through the offset holes are electrostatically attracted towards the closest circumferential portion of the downstream offset holes. Thus, the trajectories of ions passing through the offset holes are altered. The beamlet is steered by predetermined asymmetric angles. The predetermined steering angles are dependent upon the hole offsets, voltage applied to the grids, and the distance between the grids. | 02-14-2013 |
20120325151 | CHEMICAL VAPOR DEPOSITION FLOW INLET ELEMENTS AND METHODS - A flow inlet element ( | 12-27-2012 |
20120307233 | HEATED WAFER CARRIER PROFILING - A method for characterizing a surface comprises rotating a carrier about an axis of rotation where the carrier has a top surface adapted to hold at least one semiconductor wafer with a major surface of the wafer extending generally transverse to the axis of rotation. A surface characterization tool is moved over a plurality of positions relative to the top surface of the carrier, where a measurement location over the top surface of the carrier is changed while said top surface of the carrier is heated to a predetermined temperature. Characterization signals over the plurality of positions with the surface characterization tool are produced and contain information about the heated top surface of the carrier, or when semiconductor wafers are held on the carrier, information about the semiconductor wafer can also be obtained. | 12-06-2012 |
20120304926 | HEATED WAFER CARRIER PROFILING - An apparatus includes a carrier rotatable about an axis of rotation where the carrier has a top surface adapted to hold at least one semiconductor wafer and a surface characterization tool which is operative to move over a plurality of positions relative to the top surface of the carrier and/or the wafer transverse to the axis of rotation. The surface characterization tool is operative to move over a plurality of positions relative to the top surface of the carrier and/or the wafer transverse to the axis of rotation and is further adapted to produce characterization signals over the plurality of positions on at least a portion of the carrier and/or on at least a portion of said major surface of the wafer as the carrier rotates. | 12-06-2012 |
20120272892 | Metal-Organic Vapor Phase Epitaxy System and Process - A VPE reactor is improved by providing temperature control to within 0.5° C., and greater process gas uniformity via novel reactor shaping, unique wafer motion structures, improvements in thermal control systems, improvements in gas flow structures, improved methods for application of gas and temperature, and improved control systems for detecting and reducing process variation. | 11-01-2012 |
20120248336 | Apparatus and Method for Batch Non-Contact Material Characterization - An apparatus for performing non-contact material characterization includes a wafer carrier adapted to hold a plurality of substrates and a material characterization device, such as a device for performing photoluminescence spectroscopy. The apparatus is adapted to perform non-contact material characterization on at least a portion of the wafer carrier, including the substrates disposed thereon. | 10-04-2012 |
20120211166 | ION SOURCES AND METHODS FOR GENERATING AN ION BEAM WITH CONTROLLABLE ION CURRENT DENSITY DISTRIBUTION - Ion sources and methods for generating an ion bean with a controllable ion current density distribution. The ion source includes a discharge chamber having an optical grid position proximate at a first end and a re-entrant vessel positioned proximate a second end that opposes the first end. A plasma shaper extends from the re-entrant vessel and into the plasma discharge chamber. A position of the plasma shaper is adjustable relative to the grid-based ion optic such that the plasma shaper may operably change a plasma density distribution within the discharge chamber. | 08-23-2012 |
20120171870 | WAFER PROCESSING WITH CARRIER EXTENSION - Apparatus for treating wafers using a wafer carrier rotated about an axis is provided with a ring which surrounds the wafer carrier during operation. Treatment gasses directed onto a top surface of the carrier flow outwardly away from the axis over the carrier and over the ring, and pass downstream outside of the ring. The outwardly flowing gasses form a boundary over the carrier and ring. The ring helps to maintain a boundary layer of substantially uniform thickness over the carrier, which promotes uniform treatment of the wafers. | 07-05-2012 |
20120171377 | WAFER CARRIER WITH SELECTIVE CONTROL OF EMISSIVITY - A wafer carrier for use in a chemical vapor deposition apparatus includes at least one region on its outer surface having a substantially different (e.g., lower) emissivity than other regions on the outer surface. The modified emissivity region may be located on the outer edge, the top surface, and/or the bottom surface of the carrier. The region may be associated with one or more wafer pockets of the wafer carrier. The modified emissivity region may be shaped and sized so as to modify the heat transmission through the region, and thereby increase the temperature uniformity across portions of the top surface of the wafer carrier or across individual wafers. The modified emissivity region may be provided by a coating on the outer surface of the wafer carrier. | 07-05-2012 |
20120170609 | METHODS AND SYSTEMS FOR IN-SITU PYROMETER CALIBRATION - A method of in-situ pyrometer calibration for a wafer treatment reactor such as a chemical vapor deposition reactor desirably includes the steps of positioning a calibrating pyrometer at a first calibrating position and heating the reactor until the reactor reaches a pyrometer calibration temperature. The method desirably further includes rotating the support element about the rotational axis, and while the support element is rotating about the rotational axis, obtaining first operating temperature measurements from a first operating pyrometer installed at a first operating position, and obtaining first calibrating temperature measurements from the calibration pyrometer. Both the calibrating pyrometer and the first operating pyrometer desirably are adapted to receive radiation from a first portion of a wafer support element at a first radial distance from a rotational axis of the wafer support element. | 07-05-2012 |
20120156374 | SECTIONAL WAFER CARRIER - A structure for a chemical vapor deposition reactor includes a support element defining oppositely-facing substantially planar upper and lower surfaces and a vertical rotational axis substantially perpendicular to the upper and lower surfaces, and a plurality of carrier sections releasably engaged with the support element. Each carrier section can include oppositely-facing substantially planar top and bottom surfaces and at least one aperture extending between the top and bottom surfaces. The carrier sections can be disposed on the support element with the bottom surfaces of the carrier sections facing toward the upper surface of the support element, so that wafers can be held in the apertures of the carrier sections with one surface of each wafer confronting the support element and an opposite surface exposed at the top surface of the carrier sections. | 06-21-2012 |
20120156363 | Gas Injection System for Chemical Vapor Deposition Using Sequenced Valves - A gas injection system for a chemical vapor deposition system includes a gas manifold comprising a plurality of valves where each of the plurality of valves has an input that is coupled to a process gas source and an output for providing process gas. Each of a plurality of gas injectors has an input that is coupled to the output of one of the plurality of valves and an output that is positioned in one of a plurality of zones in a chemical vapor deposition reactor. A controller having a plurality of outputs where each of the plurality of outputs is coupled to a control input of one of the plurality of valves. The controller instructs at least some of the plurality of valves to open at predetermined times to provide a desired gas flow to each of the plurality of zones in the chemical vapor deposition reactor. | 06-21-2012 |
20120091914 | FAULT TOLERANT ION SOURCE POWER SYSTEM - The presently disclosed technology provides a responsive ion beam source power supply system capable of handling fault events without relying on conventional protection circuitry (e.g., fuses and breakers) so that physical power supply hardware intervention by a user is minimized for typical fault conditions and the ion beam source power supply system may recover automatically after experiencing a fault condition. The presently disclosed technology further discloses an ion beam source power supply system capable of detecting and diagnosing fault states, autonomously implementing command decisions to preserve or protect the function of other ion source modules or sub-systems, and/or mitigating or recovering from the disruptive fault event and returning the ion beam source system to desired user settings. | 04-19-2012 |
20120080609 | GRID PROVIDING BEAMLET STEERING - A grid assembly coupled to a discharge chamber of an ion beam source is configured for steering ion beamlets emitted from the discharge chamber at circularly asymmetrically determined steering angles. The grid assembly includes at least first and a second grid with a substantially circular pattern of holes, wherein each grid comprises holes positioned adjacent to one another. A plurality of the holes of the second grid is positioned with offsets relative to corresponding holes in the first grid. Due to the offsets in the holes in the second grid, ions passing through the offset holes are electrostatically attracted towards the closest circumferential portion of the downstream offset holes. Thus, the trajectories of ions passing through the offset holes are altered. The beamlet is steered by predetermined asymmetric angles. The predetermined steering angles are dependent upon the hole offsets, voltage applied to the grids, and the distance between the grids. | 04-05-2012 |
20120080308 | PLUME STEERING - Non-elliptical ion beams and plumes of sputtered material can yield a relatively uniform wear pattern on a destination target and a uniform deposition of sputtered material on a substrate assembly. The non-elliptical ion beams and plumes of sputtered material impinge on rotating destination targets and substrate assemblies. A first example ion beam grid and a second example ion beam grid each have patterns of holes with an offset between corresponding holes. The quantity and direction of offset determines the quantity and direction of steering individual beamlets passing through corresponding holes in the first and second ion beam grids. The beamlet steering as a whole creates a non-elliptical current density distribution within a cross-section of an ion beam and generates a sputtered material plume that deposits a uniform distribution of sputtered material onto a rotating substrate assembly. | 04-05-2012 |
20120080307 | ION BEAM DISTRIBUTION - An ion beam system includes a grid assembly having a substantially elliptical pattern of holes to steer an ion beam comprising a plurality of beamlets to generate an ion beam, wherein the ion current density profile of a cross-section of the ion beam is non-elliptical. The ion current density profile may have a single peak that is symmetric as to one of the two orthogonal axes of the cross-section of the ion beam. Alternatively, the single peak may be asymmetric as to the other of the two orthogonal axes of the cross-section of the ion beam. In another implementation, the ion current density profile may have two peaks on opposite sides of one of two orthogonal axes of the cross-section. Directing the ion beam on a rotating destination work-piece generates a substantially uniform rotationally integrated average ion current density at each point equidistant from the center of the destination work-piece. | 04-05-2012 |
20120073502 | HEATER WITH LIQUID HEATING ELEMENT - A heater for a heating system of a chemical vapor deposition process includes a relatively highly emissive body and an electrically conductive heating element disposed within a passageway in the body. The heating element is constructed to melt below an operating temperature of the heater. The passageway is constructed to retain the melted heating element in a continuous path, so that an electrical current along the heating element may be maintained during operation of the heater. Various shapes and arrangements of the passageway within the body may be used, and the heating system may be constructed to provide multiple, independently controllable temperature zones. | 03-29-2012 |
20120070916 | MOVABLE INJECTORS IN ROTATING DISC GAS REACTORS - A system and method for uniform deposition of material layers on wafers in a rotating disk chemical vapor deposition reaction system is provided, wherein one or more substrates are rotated on a carrier about an axis while maintaining surfaces of the one or more substrates substantially perpendicular to the axis of rotation and facing in an upstream direction along the axis of rotation. During rotating a first gas is discharged in the downstream direction towards the one or more substrates from a first set of gas inlets. A second gas is discharged in the downstream direction towards the one or more substrates from at least one movable gas injector, and the at least one movable gas inlet is moved with a component of motion in a radial direction towards or away from the axis of rotation. | 03-22-2012 |
20120058630 | Linear Cluster Deposition System - A linear cluster deposition system includes a plurality of reaction chambers positioned in a linear horizontal arrangement. First and second reactant gas manifolds are coupled to respective process gas input port of each of the reaction chambers. An exhaust gas manifold having a plurality of exhaust gas inputs is coupled to the exhaust gas output port of each of the plurality of reaction chambers. A substrate transport vehicle transports at least one of a substrate and a substrate carrier that supports at least one substrate into and out of substrate transfer ports of each of the reaction chambers. At least one of a flow rate of process gas into the process gas input port of each of the reaction chambers and a pressure in each of the reaction chambers being chosen so that process conditions are substantially the same in at least two of the reaction chambers. | 03-08-2012 |
20120040514 | CHEMICAL VAPOR DEPOSITION WITH ELEVATED TEMPERATURE GAS INJECTION - A chemical vapor deposition reactor and method. Reactive gases, such as gases including a Group III metal source and a Group V metal source, are introduced into the chamber ( | 02-16-2012 |
20120040097 | ENHANCED WAFER CARRIER - A wafer carrier used in wafer treatments such as chemical vapor deposition has pockets for holding the wafers and support surfaces for supporting the wafers above the floors of the pockets. The carrier is provided with locks for restraining wafers against upward movement away from the support surfaces. Constraining the wafers against upward movement limits the effect of wafer distortion on the spacing between the wafer and the floor surfaces, and thus limits the effects of wafer distortion on heat transfer. The carrier may include a main portion and minor portions having higher thermal conductivity than the main portion, the minor portions being disposed below the pockets. | 02-16-2012 |
20120027936 | EXHAUST FOR CVD REACTOR - A chemical vapor deposition reactor and a method of wafer processing are provided. The reactor includes a reaction chamber having an interior, a gas inlet manifold communicating with the interior of the chamber, an exhaust system including an exhaust manifold having a passage and one or more ports, and one or more cleaning elements mounted within the chamber. The gas inlet manifold can admit process gasses to form a deposit on substrates held within the interior. The passage can communicate with the interior of the chamber through the one or more ports. The one or more cleaning elements are movable between (i) a run position in which the cleaning elements are remote from the one or more ports and (ii) a cleaning position in which the one or more cleaning elements are engaged in the one or more ports. | 02-02-2012 |
20110300645 | APPARATUS AND METHOD FOR BATCH NON-CONTACT MATERIAL CHARACTERIZATION - An apparatus for performing non-contact material characterization includes a wafer carrier adapted to hold a plurality of substrates and a material characterization device, such as a device for performing photoluminescence spectroscopy. The apparatus is adapted to perform non-contact material characterization on at least a portion of the wafer carrier, including the substrates disposed thereon. | 12-08-2011 |
20110300297 | MULTI-WAFER ROTATING DISC REACTOR WITH INERTIAL PLANETARY DRIVE - Wafer carriers and methods for moving wafers in a reactor. The wafer carrier may include a platen with a plurality of compartments and a plurality of wafer platforms. The platen is configured to rotate about a first axis. Each of the wafer platforms is associated with one of the compartments and is configured to rotate about a respective second axis relative to the respective compartment. The platen and the wafer platforms rotate with different angular velocities to create planetary motion therebetween. The method may include rotating a platen about a first axis of rotation. The method further includes rotating each of a plurality of wafer platforms carried on the platen and carrying the wafers about a respective second axis of rotation and with a different angular velocity than the platen to create planetary motion therebetween. | 12-08-2011 |
20110297076 | APPARATUS AND METHOD FOR BATCH NON-CONTACT MATERIAL CHARACTERIZATION - An apparatus for performing non-contact material characterization includes a wafer carrier adapted to hold a plurality of substrates and a material characterization device, such as a device for performing photoluminescence spectroscopy. The apparatus is adapted to perform non-contact material characterization on at least a portion of the wafer carrier, including the substrates disposed thereon. | 12-08-2011 |
20110290175 | Multi-Chamber CVD Processing System - A multi-chamber CVD system includes a plurality of substrate carriers where each substrate carrier is adapted to support at least one substrate. A plurality of enclosures are each configured to form a deposition chamber enclosing one of the plurality of substrate carriers to maintain an independent chemical vapor deposition process chemistry for performing a processing step. A transport mechanism transports each of the plurality of substrate carriers to each of the plurality of enclosures in discrete steps that allow processing steps to be performed in the plurality of enclosures for a predetermined time. In some embodiments, the substrate carrier can be rotatable. | 12-01-2011 |
20110287635 | WAFER CARRIER WITH HUB - A wafer carrier for a rotating disc CVD reactor includes a unitary plate of a ceramic such as silicon carbide defining wafer-holding features such as pockets on its upstream surface and also includes a hub removably mounted to the plate in a central region of the plate. The hub provides a secure connection to the spindle of the reactor without imposing concentrated stresses on the ceramic plate. The hub can be removed during cleaning of the plate. | 11-24-2011 |
20110233176 | SPLIT LASER SCRIBE - A dual-beam laser cutting system uses laser beam polarization to output two identical laser beams. The dual identical laser beams are spaced appropriately to simultaneously cut a water thus increasing the laser cutting system's throughput as compared to a single-laser cutting system. In one implementation, the dual-beam laser cutting system | 09-29-2011 |
20110215071 | WAFER CARRIER WITH SLOPED EDGE - A wafer carrier includes a body defining a central axis, a generally planar top surface perpendicular to the central axis, and pockets recessed below the top surface for receiving wafers. The body can include a lip projecting upwardly around the periphery of the top surface. The lip can define a lip surface sloping upwardly from the planar top surface in a radially outward direction away from the central axis. The body can be adapted for mounting on a spindle of a processing apparatus so that the central axis of the body is coaxial with the spindle. The lip can improve the pattern of gas flow over the top surface of the wafer carrier. | 09-08-2011 |
20110206843 | PROCESSING METHODS AND APPARATUS WITH TEMPERATURE DISTRIBUTION CONTROL - Wafer treatment process and apparatus is provided with a wafer carrier arranged to hold wafers and to inject a fill gas into gaps between the wafers and the wafer carrier. The apparatus is arranged to vary the composition, flow rate, or both of the fill gas so as to counteract undesired patterns of temperature non-uniformity of the wafers. | 08-25-2011 |
20110167524 | METHOD AND APPARATUS OF OPERATING A SCANNING PROBE MICROSCOPE - An improved mode of AFM imaging (Peak Force Tapping (PFT) Mode) uses force as the feedback variable to reduce tip-sample interaction forces while maintaining scan speeds achievable by all existing AFM operating modes. Sample imaging and mechanical property mapping are achieved with improved resolution and high sample throughput, with the mode being workable across varying environments, including gaseous, fluidic and vacuum. Ease of use is facilitated by eliminating the need for an expert user to monitor imaging. | 07-07-2011 |
20110129947 | Method For Improving Performance Of A Substrate Carrier - A method of modifying a substrate carrier to improve process performance includes depositing material or fabricating devices on a substrate supported by a substrate carrier. A parameter of layers deposited on the substrate is then measured as a function of their corresponding positions on the substrate carrier. The measured parameter of at least some devices fabricated on the substrate or a property of the deposited layers is related to a physical characteristic of substrate carrier to obtain a plurality of physical characteristics of the substrate carrier corresponding to a plurality of positions on the substrate carrier. The physical characteristic of the substrate carrier is then modified at one or more of the plurality of corresponding positions on the substrate carrier to obtain desired parameters of the deposited layers or fabricated devices as a function of position on the substrate carrier. | 06-02-2011 |
20110114022 | WAFER CARRIER WITH HUB - A wafer carrier for a rotating disc CVD reactor includes a unitary plate of a ceramic such as silicon carbide defining wafer-holding features such as pockets on its upstream surface and also includes a hub removably mounted to the plate in a central region of the plate. The hub provides a secure connection to the spindle of the reactor without imposing concentrated stresses on the ceramic plate. The hub can be removed during cleaning of the plate. The wafer carrier also preferably includes a gas flow facilitating element on the upstream surface of the plate in the central region of the plate. The gas flow facilitating element helps redirect the flow of incident gases along the upstream surface and away from a flow discontinuity in the central region. | 05-19-2011 |
20110091648 | GAS TREATMENT SYSTEMS - An MOCVD reactor such as a rotating disc reactor ( | 04-21-2011 |
20110089022 | METHOD AND APPARATUS FOR SURFACE PROCESSING OF A SUBSTRATE - Method and apparatus for processing a substrate with a beam of energetic particles. The beam is directed from a source through a rectangular aperture in a shield positioned between the source and substrate to a treatment zone in a plane of substrate movement. Features on the substrate are aligned parallel to a major dimension of the rectangular aperture and the substrate is moved orthogonally to the aperture's major dimension. The beam impinges the substrate through the aperture during movement. The substrate may be periodically rotated by approximately 180° to reorient the features relative to the major dimension of the rectangular aperture. The resulting treatment profile is symmetrical about the sides of the features oriented toward the major dimension of the rectangular aperture. | 04-21-2011 |
20110088623 | GAS TREATMENT SYSTEMS - An MOCVD reactor such as a rotating disc reactor ( | 04-21-2011 |
20110041308 | Erodible Spacer Dicing Blade Gang Assembly - A ganged saw blade assembly for dicing of wafers includes a plurality of circular saw blades positioned along a common central axis and erodible pitch spacers positioned along the common central axis between adjacent saw blades. The pitch spacers are eroded to a desired diameter relative to the common central axis to maintain a desired saw exposure, e.g. by sawing into an abrasive material with the saw blade assembly. The saw blade assembly thus permits use of the saw blades over longer periods notwithstanding erosion of the blades. | 02-24-2011 |
20100300359 | MULTI-GAS DISTRIBUTION INJECTOR FOR CHEMICAL VAPOR DEPOSITION REACTORS - A gas distribution injector for chemical vapor deposition reactors has precursor gas inlets disposed at spaced-apart locations on an inner surface facing downstream toward a substrate carrier, and has carrier openings disposed between the precursor gas inlets. One or more precursor gases are introduced through the precursor gas inlets, and a carrier gas substantially nonreactive with the precursor gases is introduced through the carrier gas openings. The carrier gas minimizes deposit formation on the injector. The carrier gas openings may be provided by a porous plate defining the surface or via carrier inlets interspersed between precursor inlets. The gas inlets may removable or coaxial. | 12-02-2010 |
20100291308 | Web Substrate Deposition System - A deposition system includes a drum for supporting a web substrate during deposition that defines a plurality of apertures in an outer surface for passing cooling gas. A gas manifold includes an input that is coupled to an output of a gas source and at least one output that is coupled to the plurality of apertures in the outer surface of the drum. The gas manifold provides gas to the plurality of apertures that flows between the outer surface of the drum and the web substrate, thereby increasing heat transfer from the web substrate to the drum. At least one deposition source is positioned so that material deposits on the web substrate. | 11-18-2010 |
20100285218 | Linear Deposition Source - A deposition source includes at least one crucible for containing deposition material. A body includes a conductance channel with an input coupled to an output of the crucible. A heater increases a temperature of the crucible so that the crucible evaporates the deposition material into the conductance channel. A plurality of nozzles is coupled to an output of the conductance channel so that evaporated deposition material is transported from the crucible through the conductance channel to the plurality of nozzles where the evaporated deposition material is ejected from the plurality of nozzles to form a deposition flux. At least one of the plurality of nozzles includes a tube that is positioned proximate to the conductance channel so that the tube restricts an amount of deposition material supplied to the nozzle including the tube. | 11-11-2010 |
20100282167 | Linear Deposition Source - A deposition source includes a crucible for containing deposition material and a body comprising a conductance channel. An input of the conductance channel is coupled to an output of the crucible. A heater heats the crucible so that the crucible evaporates the deposition material into the conductance channel. A heat shield comprising a plurality of heat resistant material layers is positioned around at least one of the heater and the body. A plurality of nozzles is coupled to an output of the conductance channel so that evaporated deposition material is transported from the crucible through the conductance channel to the plurality of nozzles where the evaporated deposition material is ejected from the plurality of nozzles to form a deposition flux. | 11-11-2010 |
20100219358 | GRID TRANSPARENCY AND GRID HOLE PATTERN CONTROL FOR ION BEAM UNIFORMITY - A design process for varying hole locations or sizes or both in an ion beam grid includes identifying a control grid to be modified; obtaining a change factor for the grid pattern; and using the change factor to generate a new grid pattern. The change factor is one or both of a hole location change factor or a hole diameter change factor. Also included is an ion beam grid having the characteristic of hole locations or sizes or both defined by a change factor modification of control grid hole locations or sizes or both. | 09-02-2010 |
20100159132 | Linear Deposition Source - A deposition source includes a plurality of crucibles that each contains a deposition material. A heat shield provides at least partial thermal isolation for at least one of the plurality of crucibles. A body is included with a plurality of conductance channels. An input of each of the plurality of conductance channels is coupled to an output of a respective one of the plurality of crucibles. A heater increases a temperature of the plurality of crucibles so that each crucible evaporates the deposition material into the plurality of conductance channels. An input of each of a plurality of nozzles is coupled to an output of one of the plurality of conductance channels. Evaporated deposition materials are transported from the crucibles through the conductance channels to the nozzles where the evaporated deposition material is ejected from the plurality of nozzles to form a deposition flux. | 06-24-2010 |
20100143588 | CHEMICAL VAPOR DEPOSITION FLOW INLET ELEMENTS AND METHODS - A flow inlet element ( | 06-10-2010 |
20100122385 | METHOD AND APPARATUS OF OPERATING A SCANNING PROBE MICROSCOPE - An improved mode of AFM imaging (Peak Force Tapping (PFT) Mode) uses force as the feedback variable to reduce tip-sample interaction forces while maintaining scan speeds achievable by all existing AFM operating modes. Sample imaging and mechanical property mapping are achieved with improved resolution and high sample throughput, with the mode workable across varying environments, including gaseous, fluidic and vacuum. | 05-13-2010 |
20100112216 | Chemical vapor deposition with elevated temperature gas injection - A chemical vapor deposition reactor and method. Reactive gases, such as gases including a Group III metal source and a Group V metal source, are introduced into a rotating-disc reactor and directed downwardly onto a wafer carrier and substrates which are maintained at an elevated substrate temperature, typically above about 400° C. and normally about 700-1100° C. to deposit a compound such as a III-V semiconductor. The gases are introduced into the reactor at an inlet temperature desirably above about 75° C. and most preferably about 100°-250° C. The walls of the reactor may be at a temperature close to the inlet temperature. Use of an elevated inlet temperature allows the use of a lower rate of rotation of the wafer carrier, a higher operating pressure, lower flow rate, or some combination of these. | 05-06-2010 |
20100087050 | Chemical vapor deposition with energy input - Methods of depositing compound semiconductors onto substrates are disclosed, including directing gaseous reactants into a reaction chamber containing the substrates, selectively supplying energy to one of the gaseous reactants in order to impart sufficient energy to activate that reactant but insufficient to decompose the reactant, and then decomposing the reactant at the surface of the substrate in order to react with the other reactants. The preferred energy source is microwave or infrared radiation, and reactors for carrying out these methods are also disclosed. | 04-08-2010 |
20100055318 | WAFER CARRIER WITH VARYING THERMAL RESISTANCE - In chemical vapor deposition apparatus, a water carrier ( | 03-04-2010 |
20090205092 | METHOD OF FABRICATING A PROBE DEVICE FOR A METROLOGY INSTRUMENT AND A PROBE DEVICE PRODUCED THEREBY - A method of producing a probe device for a metrology instrument such as an AFM includes providing a substrate and forming a tip stock extending upwardly from the substrate. The tip stock is preferably FIB milled to form a tip of the probe device. The tip preferably has a high aspect ratio, with a height that is at least about 1 micron for performing critical dimension (e.g., deep trench) atomic force microscopy. The stock is preferably pedestal shaped having a distal end that is substantially planar which can be machined into a tip in at least less than about 2 minutes. With the preferred embodiments, the FIB milling step can be completed in substantially fewer and less complicated steps than known techniques to produce a high aspect ratio tip suitable for DT-AFM in less than about one minute. | 08-13-2009 |
20090185193 | Interferometric measurement of DLC layer on magnetic head - An explicit relationship is developed between the ratio of average interferometric modulation produced by diamond-like carbon (DLC)-coated magnetic-head surfaces and the thickness of the DLC layer. Accordingly, the thickness of the DLC layer is calculated in various manners from modulation data acquired for the system using object surfaces of known optical parameters. | 07-23-2009 |
20090155028 | Wafer carrier with hub - A wafer carrier for a rotating disc CVD reactor includes a unitary plate of a ceramic such as silicon carbide defining wafer-holding features such as pockets on its upstream surface and also includes a hub removably mounted to the plate in a central region of the plate. The hub provides a secure connection to the spindle of the reactor without imposing concentrated stresses on the ceramic plate. The hub can be removed during cleaning of the plate. | 06-18-2009 |
20090098306 | Method and Apparatus for Surface Processing of a Substrate Using an Energetic Particle Beam - Method and apparatus for processing a substrate with an energetic particle beam. Features on the substrate are oriented relative to the energetic particle beam and the substrate is scanned through the energetic particle beam. The substrate is periodically indexed about its azimuthal axis of symmetry, while shielded from exposure to the energetic particle beam, to reorient the features relative to the major dimension of the beam. | 04-16-2009 |
20090018786 | Interferometric iterative technique with bandwidth and numerical-aperture dependency - An interferometric intensity equation includes parameters that depend on bandwidth and numerical aperture. An error function based on the difference between actual intensities produced by interferometry and the intensities predicted by the equation is minimized iteratively with respect to the parameters. The scan positions (i.e., the step sizes between frames) that minimized the error function are then used to calculate the phase for each pixel, from which the height can also be calculated in conventional manner. As a result, the phase map generated by the procedure is corrected to a degree of precision significantly better than previously possible. | 01-15-2009 |
20090017190 | Movable injectors in rotating disc gas reactors - A system and method for uniform deposition of material layers on wafers in a rotating disk chemical vapor deposition reaction system is provided, wherein one or more substrates are rotated on a carrier about an axis while maintaining surfaces of the one or more substrates substantially perpendicular to the axis of rotation and facing in an upstream direction along the axis of rotation. During rotating a first gas is discharged in the downstream direction towards the one or more substrates from a first set of gas inlets. A second gas is discharged in the downstream direction towards the one or more substrates from at least one movable gas injector, and the at least one movable gas inlet is moved with a component of motion in a radial direction towards or away from the axis of rotation. | 01-15-2009 |
20090002775 | Interferometric measurement of non-homogeneous multi-material surfaces - Correction factors for the ALR and PTR parameters of magnetic-head sliders are determined by calculating an effective reflectivity and a corresponding PCOR at each pixel of the air-bearing surface. The absolute value of reflectivity at each pixel of the AlTiC air-bearing surface is obtained from an empirical equation relating it to modulation. The ratio of Al | 01-01-2009 |
20080276695 | NON-DESTRUCTIVE WAFER-SCALE SUB-SURFACE ULTRASONIC MICROSCOPY EMPLOYING NEAR FIELD AFM DETECTION - A method, and corresponding apparatus, of imaging sub-surface features at a plurality of locations on a sample includes coupling an ultrasonic wave into a sample at a first lateral position. The method then measures the amplitude and phase of ultrasonic energy near the sample with a tip of an atomic force microscope. Next, the method couples an ultrasonic wave into a sample at a second lateral position and the measuring step is repeated for the second lateral position. Overall, the present system and methods achieve high resolution sub-surface mapping of a wide range of samples, including silicon wafers. It is notable that when imaging wafers, backside contamination is minimized. | 11-13-2008 |
20080264341 | APPARATUS FOR CATHODIC VACUUM-ARC COATING DEPOSITION - Apparatus for cathodic vacuum-arc coating deposition. The apparatus includes a mixing chamber, at least one input duct projecting from a first end wall of the mixing chamber, and an output duct projecting from a second end wall of the mixing chamber. Coupled with each input duct is a plasma source adapted to discharge an ion flow of a coating material into the mixing chamber, which is subsequently directed to the output duct. A first solenoidal coil disposed about a side wall of the mixing chamber creates a first magnetic field inside the mixing chamber for steering the ion flow. A second solenoidal coil is disposed adjacent to the first end wall and aligned substantially coaxially with the output duct. The second solenoidal coil creates a second magnetic field inside the mixing chamber for steering the first ion flow. The electrical currents flow through the first and second solenoidal coils in opposite solenoidal directions. | 10-30-2008 |
20080218999 | Variable-wavelength illumination system for interferometry - An illumination system for an interferometer combines a white-light source and a green source with a reflective green dichroic filter. When the green source alone is energized for PSI measurements, the output of the illumination system is green only. When a white-light output is desired for VSI measurements, both sources are energized and the intensity of the green light is judiciously calibrated to match the spectral band filtered out by the dichroic mirror. Therefore, the system can switch between green and white light simply by changing the selection of energized sources, without any mechanical switching and attendant delays and vibrations. Multiple narrowband sources may be combined with white light in a similar manner. | 09-11-2008 |