| VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. Patent applications |
| Patent application number | Title | Published |
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| 20150348682 | INTEGRATED SUPERCONDUCTOR DEVICE AND METHOD OF FABRICATION - An integrated superconductor device may include a substrate base and an intermediate layer disposed on the substrate base and comprising a preferred crystallographic orientation. The integrated superconductor device may further include an oriented superconductor layer disposed on the intermediate layer and a conductive strip disposed on a portion of the oriented superconductor layer, The conductive strip may define a superconductor region of the oriented superconductor layer thereunder, and an exposed region of the oriented superconductor layer adjacent the superconductor region. | 12-03-2015 |
| 20150348680 | LOW AC LOSS HIGH TEMPERATURE SUPERCONDUCTOR TAPE - A superconductor tape includes a plurality of conductive strips having respective long directions parallel to a long tape direction of the superconductor tape, where each of the plurality of conductive strips separated from one another by a inter-strip region. The superconductor tape further includes a superconductor layer disposed adjacent the plurality of conductive strips, having a length along the long tape direction, where the superconductor layer comprises a plurality of superconductor strips disposed under the respective plurality of conductive strips, and a non-superconductor strip disposed adjacent the inter-strip region. | 12-03-2015 |
| 20150325464 | SYSTEM AND APPARATUS FOR HOLDING A SUBSTRATE OVER WIDE TEMPERATURE RANGE - An apparatus to support a substrate may include a base, a clamp portion to apply a clamping voltage to the substrate, and a displacement assembly configured to hold the clamp portion and base together in a first operating position, and to move the clamp portion with respect to the base from the first operating position to a second operating position, wherein the clamp portion and base are separate from one another in the second operating position. | 11-12-2015 |
| 20150325410 | APPARATUS AND METHOD FOR DYNAMIC CONTROL OF ION BEAM ENERGY AND ANGLE - In one embodiment a method of etching a substrate includes directing a first ion beam to the substrate through an extraction plate of a processing apparatus using a first set of control settings of the processing apparatus. The method may further include detecting a signal from the substrate that indicates a change in material being etched by the first ion beam from a first material to a second material, adjusting control settings of the processing apparatus to a second set of control settings different from the first set of control settings based on the second material, and directing a second ion beam to the substrate through the extraction plate using the second set of control settings. | 11-12-2015 |
| 20150322590 | APPARATUS FOR PROCESSING A MELT - An apparatus for processing a melt may include a crucible configured to contain the melt, where the melt has an exposed surface that is separated from a floor of the crucible by a first distance. The apparatus may further include a submerged heater comprising a heating element and a shell disposed between the heating element and the melt, wherein the heating element does not contact the melt. The heating element may be disposed at a second distance with respect to the exposed surface of the melt that is less than the first distance. | 11-12-2015 |
| 20150290815 | PLANAR END EFFECTOR AND METHOD OF MAKING A PLANAR END EFFECTOR - A planar end effector and method of making a planar end effector. The method may include the steps of applying adhesive to a first side of a first sheet, the first sheet having a second side opposite the first side, and disposing a first side of a second sheet on the adhesive, the second sheet having a second side opposite the first side, wherein the first sides of the first and second sheets confront each other and define an at least partially adhesive-filled bond-gap therebetween and wherein the second sides of the first and second sheets are parallel with one another. The method may further include the steps of curing the adhesive to produce a planar composite workpiece including the first sheet, the second sheet, and an intermediate adhesive layer, and cutting the end effector from the composite workpiece. | 10-15-2015 |
| 20150279720 | END EFFECTOR PADS - An end effector pad including a fence member, a first recessed support member extending from a first side of the fence member, a second recessed support member extending from a second side of the fence member opposite the first side, a first glass plate having a relatively low coefficient of friction disposed on top of the first recessed support member for supporting a substrate thereon, and a second glass plate having a relatively low coefficient of friction disposed on top of the second recessed support member for supporting a substrate thereon. | 10-01-2015 |
| 20150270099 | ION BEAM UNIFORMITY CONTROL USING ION BEAM BLOCKERS - A method of achieving ion beam uniformity control using ion beam blockers. The method includes generating an ion beam, detecting a current profile of said ion beam with an ion beam blocker unit, wherein said detected current profile is an initial current profile, blocking a portion of said ion beam with said ion beam blocker unit to achieve a second current profile that is different from the initial current profile, and implanting said ion beam into a workpiece after said blocking. | 09-24-2015 |
| 20150243470 | PLATEN SUPPORT STRUCTURE - A platen support structure adapted to thermally insulate a heated platen portion from a cold base plate while providing substantially leak-free gas transport therebetween and while allowing thermal expansion and contraction of the platen portion. Various examples provide of the support structure provide a tubular flexure having an internal gas conduit, a platen portion mounting tab connected to the flexure and having an internal gas input slot that is in fluid communication with the internal gas conduit of the flexure, the platen portion mounting tab being adapted for connection to a platen portion of a platen, and a base plate mounting tab connected to the flexure and having an internal gas output slot that is in fluid communication with the internal gas conduit of the flexure, the base plate mounting tab being adapted for connection to a base plate of the platen. | 08-27-2015 |
| 20150237677 | HEATED PLATEN WITH IMPROVED TEMPERATURE UNIFORMITY - A heated platen with improved temperature uniformity is generally described. Various examples provide a platen portion with a metallization layer thermally coupled thereto. An electrical contact may be connected to the metallization layer and configured to conduct an electric current for heating the metallization layer and the platen portion. The electrical contact may include an electrical conductor and a resistive heating element that is configured to heat up when electric current flows therethrough, thereby creating a thermal block that reduces an amount of heat that is absorbed into the electrical contact from the platen portion. | 08-20-2015 |
| 20150228524 | PLASMA RESISTANT ELECTROSTATIC CLAMP - An apparatus to support a substrate may include a base and an insulator portion adjacent to the base and configured to support a surface of the substrate. The apparatus may also include an electrode system to apply a clamping voltage to the substrate, wherein the insulator portion is configured to provide a gas to the substrate through at least one channel that has a channel width, wherein a product of the gas pressure and channel width is less than a Paschen minimum for the gas, where the Paschen minimum is a product of pressure and separation of surfaces of an enclosure at which a breakdown voltage of the gas is a minimum. | 08-13-2015 |
| 20150228445 | METHOD AND APPARATUS FOR THREE DIMENSIONAL ION IMPLANTATION - A scan system for processing a substrate with an ion beam may include a scanner to receive the ion beam having a shape of a ribbon beam, the ribbon beam having a beam width along a first axis and beam height along a second axis that is perpendicular to the first axis, the beam width being at least three times greater than the beam height; and a scan power supply to send signals to the scanner to generate a deflecting field that deflects the ribbon beam along the second axis. | 08-13-2015 |
| 20150214339 | TECHNIQUES FOR ION IMPLANTATION OF NARROW SEMICONDUCTOR STRUCTURES - A method to process a semiconductor device includes performing a first ion implant comprising first ions into a thin crystalline semiconductor structure, the first ion dose amorphizing a first region of the thin crystalline semiconductor structure; performing a second ion implant comprising dopant ions of a dopant species into at least the first region of the thin crystalline semiconductor structure; and performing at least one anneal of the semiconductor device after the first implant, wherein after the first and second implant and the at least one anneal, the thin crystalline semiconductor structure forms a mono-crystalline region without defects. | 07-30-2015 |
| 20150214087 | DIFFUSION RESISTANT ELECTROSTATIC CLAMP - In one embodiment, a method of fabricating an electrostatic clamp includes forming an insulator body, forming an electrode on the insulator body, and depositing a layer stack on the electrode, the layer stack comprising an aluminum oxide layer that is deposited using atomic layer deposition (ALD). | 07-30-2015 |
| 20150206701 | TWO-DIMENSIONAL MASS RESOLVING SLIT MECHANISM FOR SEMICONDUCTOR PROCESSING SYSTEMS - An adjustable mass-resolving slit assembly includes an aperture portion and an actuation portion. The aperture portion includes first and second shield members that define an aperture therebetween for receiving an ion beam during semiconductor processing operations. The actuation portion is coupled to the aperture portion and selectively and independently adjusts the position of the first and second shield members along first and second non-parallel axes. Adjusting the position of the first and second shield members along the first axis adjusts a width of the aperture. Adjusting the position of the first and second shield members along the second axis adjusts a region of the first and second shield members impinged by the ion beam. Methods for using the adjustable mass-resolving slit assembly are also disclosed. | 07-23-2015 |
| 20150187450 | COLD STRIPPER FOR HIGH ENERGY ION IMPLANTER WITH TANDEM ACCELERATOR - A cold stripper for a high-energy ion implanter system is provided. The cold stripper including a stripper tube having a hollow cavity, a first aperture in the stripper tube to admit an ion beam of positively charged ions into the hollow cavity and a second aperture in the stripper tube to discharge the ion beam from the hollow cavity, a gas pump coupled to the hollow cavity to introduce a gas into the hollow cavity, one or more cooling passages in the stripper tube, and a coolant pump coupled to the one or more cooling passages to circulate a coolant through the one or more cooling passages. | 07-02-2015 |
| 20150179409 | IN SITU CONTROL OF ION ANGULAR DISTRIBUTION IN A PROCESSING APPARATUS - A processing apparatus may include a plasma source coupled to a plasma chamber to generate a plasma in the plasma chamber, an extraction plate having an aperture disposed along a side of the plasma chamber; a deflection electrode disposed proximate the aperture and configured to define a pair of plasma menisci when the plasma is present in the plasma chamber; and a deflection electrode power supply to apply a bias voltage to the deflection electrode with respect to the plasma, wherein a first bias voltage applied to the deflection electrode is configured to generate a first angle of incidence for ions extracted through the aperture from the plasma, and a second bias voltage applied to the deflection electrode is configured to generate a second angle of incidence of ions extracted through the aperture from the plasma, the second angle of incidence being different from the first angle of incidence. | 06-25-2015 |
| 20150176625 | CONTAINED CERAMIC FASTENER - A ceramic fastener includes a ceramic body portion, and a containment layer disposed around the ceramic body portion. The containment layer retains pieces of the ceramic body portion when the ceramic body portion is subjected to a torque sufficient to fracture the ceramic body portion. The fastener can be a nut, and the containment layer can be disposed around one or more of the top, bottom and side surfaces of the nut. The containment layer can be a metal shroud having a thickness from 0.01 to 0.125 inches. The ceramic body portion can be alumina or zirconia. A thread insert may be disposed within a fastener bore of the ceramic body portion. | 06-25-2015 |
| 20150162742 | FAULT CURRENT LIMITER WITH INTERLEAVED WINDINGS - In one embodiment a fault current limiter comprises a current splitting reactor having interleaved windings to reduce an insertion impedance of the fault current limiter during non-fault conditions. The current splitting reactor having interleaved windings may include a first winding, the first winding including a plurality of sub-windings and a second winding, the second winding including a plurality of sub-windings, the sub-windings of the first winding and the sub-windings of the second winding wounds about the core and interleaved. | 06-11-2015 |
| 20150148236 | LASER PROCESSING OF SUPERCONDUCTOR LAYERS - A method of forming a superconductor includes exposing a layer disposed on a substrate to an oxygen ambient, and selectively annealing a portion of the layer to form a superconducting region within the layer. | 05-28-2015 |
| 20150144810 | TRIPLE MODE ELECTROSTATIC COLLIMATOR - A system includes a first electrode to receive an ion beam, a second electrode to receive the ion beam after passing through the first electrode, the first and second electrode forming an upstream gap defined by a convex surface on one of the first or second electrode and concave surface on the other electrode, a third electrode to receive the ion beam after passing through the second electrode, wherein the second and third electrode form a downstream gap defined by a convex surface on one of the second or third electrode and concave surface on the other electrode, wherein the second electrode has either two concave surfaces or two convex surfaces; and a voltage supply system to independently supply voltage signals to the first, second and third electrode, that accelerate and decelerate the ion beam as it passes through the first, second, and third electrode. | 05-28-2015 |
| 20150132907 | TECHNIQUES FOR ION IMPLANTATION OF NON-PLANAR FIELD EFFECT TRANSISTORS - A method of forming a fin field effect transistor (finFET) device includes forming a fin structure on a substrate, the substrate comprising a semiconductor material and forming a replacement gate cavity comprising an exposed portion of the fin structure and a sidewall portion adjacent the exposed portion, wherein the exposed portion of the fin structure defines a channel region. The method further includes performing at least one implant into the exposed portion of the fin structure. | 05-14-2015 |
| 20150125240 | DYNAMIC PITCH SUBSTRATE LIFT - An apparatus for dynamically adjusting the pitch between substrates in a substrate stack comprises first and second lift portions. The first lift portion supports a first group of the plurality of substrates, and the second lift portion supports a second group of the plurality of substrates. The first and second lift portions are operable to move the first and second groups of substrates in a first direction independently from each other. This independent movement enables the pitch, or spacing, between adjacent substrates to be dynamically adjusted so that an end effector of a robot can be positioned between such adjacent substrates to pick one of the substrates without inadvertently engaging another substrate that is not being picked. Other embodiments are disclosed. | 05-07-2015 |
| 20150125239 | SYSTEM AND METHOD FOR ROTATIONAL TRANSFER OF ARTICLES BETWEEN VACUUM AND NON-VACUUM ENVIRONMENTS - A device for transferring articles between an atmospheric pressure environment and a vacuum environment includes a transfer housing having an atmospheric transfer port, a pumping port, a vacuum transfer port, and a venting port disposed in a circumferentially-spaced relationship. The vacuum transfer port is in communication with the vacuum environment and the atmospheric transfer port is in communication with the atmospheric pressure environment. The device can include a carrier disc rotatably disposed within the transfer housing, the carrier disc having a pocket formed in a sidewall thereof for holding an article. The device may further include an air bearing associated with the transfer housing and configured to expel gas to maintain a gap between the transfer housing and the carrier disc. | 05-07-2015 |
| 20150123006 | PLASMA CATHODE CHARGED PARTICLE LITHOGRAPHY SYSTEM - In one embodiment, a system for patterning a substrate includes a plasma chamber; a power source to generate a plasma within the plasma chamber; and an extraction plate system comprising a plurality of apertures and disposed along a side of the plasma chamber. The extraction plate system is configured to receive an extraction voltage that biases the extraction plate system with respect to the plasma chamber wherein the plurality of apertures are configured to extract a plurality of respective charged particle beamlets from the plasma. The system further includes a projection optics system to direct at least one of the plurality of charged particle beamlets to the substrate. | 05-07-2015 |
| 20150115796 | PINCHED PLASMA BRIDGE FLOOD GUN FOR SUBSTRATE CHARGE NEUTRALIZATION - A plasma flood gun for an ion implantation system includes an insulating block portion and first and second conductive block portions disposed on opposite sides of the insulating block portion. Conductive straps can be coupled between the first and second conductive block portions. The conductive block portions and the central body portion include recesses which form a closed loop plasma chamber. A power source is coupled to the conductive block portions for inductively coupling radio frequency electrical power into the closed loop plasma chamber to excite the gaseous substance to generate a plasma. The respective recess in the second conductive block portion includes a pinch region having a cross-sectional dimension that is smaller than a cross-sectional area of portion of the closed loop plasma chamber directly adjacent the pinch region. The pinch region can be positioned immediately adjacent an outlet portion formed in the second conductive block portion. | 04-30-2015 |
| 20150108894 | WIDE METAL-FREE PLASMA FLOOD GUN - In one embodiment an apparatus to provide electrons to a substrate includes a plurality of helicon plasma sources arranged in a helicon source array, wherein each helicon plasma source comprises a helical antenna configured to generate a wave vector parallel to a first axis; and a magnet configured to generate a magnetic field vector parallel to the first axis, wherein each helicon plasma source is further configured to generate a respective magnetic field vector that is opposite that of a magnetic field vector of an adjacent helicon plasma source. | 04-23-2015 |
| 20150108362 | APPARATUS TO CONTROL AN ION BEAM - An apparatus to control an ion beam includes a scanner configured in an first state to scan the ion beam wherein the scanner outputs the ion beam as a diverging ion beam; a collimator configured to receive along a side of the collimator the diverging ion beam and to output the diverging ion beam as a collimated ion beam; a beam adjustment component that extends proximate the side of the collimator; and a controller configured to send a first signal when the scanner is in the first state to the beam adjustment component to adjust ion trajectories of the diverging ion beam from a first set of trajectories to a second set of trajectories. | 04-23-2015 |
| 20150108361 | DUAL STAGE SCANNER FOR ION BEAM CONTROL - An ion beam scanner includes a first scanner stage having a first opening to transmit an ion beam, the first scanner stage to generate, responsive to a first oscillating deflection signal, a first oscillating deflecting field within the first opening; a second scanner stage disposed downstream of the first scanner stage and having a second opening to transmit the ion beam, the second scanner stage to generate, responsive to a second oscillating deflection signal, a second oscillating deflecting field within the second opening that is opposite in direction to the first oscillating deflecting field, and a scan controller to synchronize the first oscillating deflection signal and second oscillating deflection signal to generate a plurality of ion trajectories when the scanned ion beam exits the second stage that define a common focal point. | 04-23-2015 |
| 20150104885 | MOVEABLE CURRENT SENSOR FOR INCREASING ION BEAM UTILIZATION DURING ION IMPLANTATION - An ion implant apparatus and moveable ion beam current sensor are described. Various examples provide moving the ion beam current sensor during an ion implant process such that a distance between the ion beam current sensor and a substrate is maintained during scanning of the ion beam toward the substrate. The ion beam current sensor is disposed on a moveable support configured to move the ion beam current sensor in a first direction corresponding to the scanning of the ion beam while the substrate is moved in a second direction. | 04-16-2015 |
| 20150090897 | SiC Coating In An Ion Implanter - An ion implanter has a coating of low resistivity silicon carbide on one or more of the conductive surfaces that are exposed to ions. For example, ions are generated in an ion source chamber, and the interior surfaces of the walls are coated with low resistivity silicon carbide. Since silicon carbide is hard and resistant to sputtering, this may reduce the amount of contaminant ions that are introduced into the ion beam that is extracted from the ion source chamber. In some embodiments, the extraction electrodes are also coated with silicon carbide to reduce the contaminant ions introduced by these components. | 04-02-2015 |
| 20150086300 | SYSTEM AND METHOD FOR TRANSFERRING ARTICLES BETWEEN VACUUM AND NON-VACUUM ENVIRONMENTS - A system for transferring articles between an atmospheric pressure environment and a vacuum pressure environment. The system may include a vacuum enclosure having a wall separating the atmospheric pressure environment from the vacuum pressure environment. A transfer shaft may extend through the wall from the atmospheric pressure environment to the vacuum pressure environment. The transfer shaft may include an atmospheric transfer port disposed within the atmospheric pressure environment, a vacuum transfer port disposed within the vacuum pressure environment, and an intermediate port disposed adjacent a channel in the wall. The system may further include a movable transfer carriage disposed within the transfer shaft, the transfer carriage having an access port for providing access to an interior of the transfer carriage. The system may further include an air bearing on the transfer carriage configured to expel gas for maintaining a gap between the transfer carriage and the transfer shaft. | 03-26-2015 |
| 20150083581 | TECHNIQUES FOR PROCESSING SUBSTRATES USING DIRECTIONAL REACTIVE ION ETCHING - A method of treating a substrate includes directing ions to the substrate along at least one non-zero angle with respect to a perpendicular to a substrate surface in a presence of a reactive ambient containing a reactive species where the substrate includes a surface feature. At least one surface of the surface feature is etched using the ions in combination with the reactive ambient at a first etch rate that is greater than a second etch rate when the ions are directed to the substrate without the reactive ambient and greater than a third etch rate when the reactive ambient is provided to the substrate without the ions. | 03-26-2015 |
| 20150071327 | GAS COUPLED PROBE FOR SUBSTRATE TEMPERATURE MEASUREMENT - A low pressure temperature sensor for measuring the temperature of a substrate during semiconductor device manufacturing is generally described. Various embodiments describe a gas chamber having an opening disposed within a dielectric plate of a platen with a seal disposed around the opening in the gas chamber such that the opening in the gas chamber may be sealed against the substrate. Furthermore, a temperature sensor and a spring are disposed in the gas chamber, the spring biased to place the temperature sensor in contact with the substrate. Additionally, a gas source configured to pressurize the gas chamber with a low pressure gas in order to increase thermal conductivity between the substrate and the temperature sensor is provided. | 03-12-2015 |
| 20150069017 | DYNAMIC ELECTRODE PLASMA SYSTEM - A system for processing a substrate includes a plasma chamber to generate a plasma therein. The system also includes a process chamber to house the substrate, where the process chamber is adjacent the plasma chamber. The system also includes a rotatable extraction electrode disposed between the plasma chamber and substrate, where the rotatable extraction electrode is configured to extract an ion beam from the plasma, and configured to scan the ion beam over the substrate without movement of the substrate by rotation about an extraction electrode axis. | 03-12-2015 |
| 20150065351 | HIGH TEMPERATURE SUPERCONDUCTOR TAPE WITH ALLOY METAL COATING - In one embodiment a superconductor tape includes a substrate comprising a plurality of layers, an oriented superconductor layer disposed on the substrate, and an alloy coating disposed upon the superconductor layer, the alloy coating comprising one or more metallic layers in which at least one metallic layer comprises a metal alloy. | 03-05-2015 |
| 20150063954 | HIGH THROUGHPUT SUBSTRATE HANDLING ENDSTATION AND SEQUENCE - Systems and methods for facilitating expeditious handling and processing of semiconductor substrates with a minimal number of handling devices. Such a system may include an entry load-lock configured to transfer substrates from an atmospheric environment to a vacuum chamber, an alignment station disposed in the vacuum chamber and configured to adjust orientations of substrates, a first vacuum robot configured to move substrates from the entry load-lock to the alignment station, a process station disposed in the vacuum chamber and configured to perform a designated process on substrates, first and second exit load-locks configured to transfer substrates from the vacuum chamber to the atmospheric environment, and a second vacuum robot configured to move substrates from the alignment station to the process station and further configured to move substrates from the process station to the first exit load-lock and to the second exit load-lock in an alternating fashion. | 03-05-2015 |
| 20150060691 | SEMICONDUCTOR PROCESS PUMPING ARRANGEMENTS - A semiconductor process pump configured to mitigate losses in pump speed during operation. The semiconductor process pump may include a housing having an inlet port for receiving gas molecules therethrough, wherein a forward-most terminus of the inlet port defines an inlet face, one or more working surfaces disposed within the housing, and a mounting flange disposed on an exterior of the housing for facilitating attachment of the pump to a gas enclosure, wherein a forward-most terminus of the mounting flange defines a flange face. The flange face may be offset from the inlet face rearwardly along the housing by a distance d. Thus, when the semiconductor process pump is mounted to a wall of a gas enclosure, the housing may extend into the wall and the inlet face may be disposed within or immediately adjacent the interior of the gas enclosure. | 03-05-2015 |
| 20150060433 | HIGH TEMPERATURE PLATEN POWER CONTACT - A heated platen having a heating element and an electrical contact assembly for the heating element is generally described. Various examples provide a dielectric plate including a heating element and a terminal disposed therein. An electrical connection assembly configured to connect the heating element to a power source is also provided. The electrical connection including an electrical connection plug, a conductive sleeve disposed within the electrical connection plug, and a connector pin having a bottom portion and a top portion, the bottom portion disposed within the sleeve, the top portion having a spring structure, the spring structure configured to maintain electric contact with the terminal throughout a range of temperatures. | 03-05-2015 |
| 20150055261 | SYSTEM AND METHOD OF PROVIDING ISOLATED POWER TO GATE DRIVING CIRCUITS IN SOLID STATE FAULT CURRENT LIMITERS - A system and method for providing isolated power to the gate driving circuits used in solid state switching devices is disclosed. Rather than using expensive isolated AC/DC power supplies, an isolation transformer is used to provide isolated AC voltage. In one embodiment, the primary winding of the isolation transformer is disposed across an independent AC source. In another embodiment, the primary winding of the isolation transformer is disposed across two phases of the AC power line. Isolated AC voltage is then generated across the secondary winding of the isolation transformer. This isolated AC voltage is then used by a non-isolated DC power supply, which generates the power for the gate driving circuit. | 02-26-2015 |
| 20150034837 | LIFETIME ION SOURCE - An ion source includes an ion source chamber, a gas source to provide a fluorine-containing gas species to the ion source chamber and a cathode disposed in the ion source chamber configured to emit electrons to generate a plasma within the ion source chamber. The ion source chamber and cathode are comprised of a refractory metal. A phosphide insert is disposed within the ion source chamber and presents an exposed surface area that is configured to generate gas phase phosphorous species when the plasma is present in the ion source chamber, wherein the phosphide component is one of boron phosphide, tungsten phosphide, aluminum phosphide, nickel phosphide, calcium phosphide and indium phosphide. | 02-05-2015 |
| 20150024579 | Method Of Improving Ion Beam Quality In An Implant System - A method for improving the ion beam quality in an ion implanter is disclosed. In some ion implantation systems, contaminants from the ion source are extracted with the desired ions, introducing contaminants to the workpiece. These contaminants may be impurities in the ion source chamber. This problem is exacerbated when mass analysis of the extracted ion beam is not performed, and is further exaggerated when the desired feedgas includes a halogen. | 01-22-2015 |
| 20140367583 | ANNULAR COOLING FLUID PASSAGE FOR MAGNETS - A magnet having an annular coolant fluid passage is generally described. Various examples provide a magnet including a first magnet and a second magnet disposed around an ion beam coupler with an aperture there through. Each of the first and second magnets including a metal core having a cavity therein, one or more conductive wire wraps disposed around the metal core, and an annular core element configured to be inserted into the cavity, wherein an annular coolant fluid passage is formed between the cavity and the annular core element. Furthermore, each annular core element may have a first diameter and a middle section having a second diameter, the second diameter being less than the first diameter. Other embodiments are disclosed and claimed. | 12-18-2014 |
| 20140356547 | SYSTEM AND METHOD OF IMPROVING IMPLANT QUALITY IN A PLASMA-BASED IMPLANT SYSTEM - A system and method for the removal of deposited material from the walls of a plasma chamber is disclosed. The system may have two modes; a normal operating mode and a cleaning mode. | 12-04-2014 |
| 20140342471 | Variable Doping Of Solar Cells - A system and method for determining the edge or region where a saw first enters a silicon brick, and using this information to process this region differently is disclosed. This region, referred to as the saw entry region, may be thinner, or have a rougher texture than the rest of the substrate. This difference may impact the substrate's ultimate performance. For example, if the substrate is processed as a solar cell, the performance of the saw entry region may be suboptimal. | 11-20-2014 |
| 20140341700 | SYSTEM AND METHOD FOR QUICK-SWAP OF MULTIPLE SUBSTRATES - A system and method are disclosed for substrate handling. The system can include a robot adapter configured to connect to a robot, and first and second end effectors connected to the robot adapter. The robot adapter is configured to move the first and second end effectors from a first, retracted, position to a second, extended, position. In the extended position, the first or second end effector is disposed within a top entry load lock for picking or dropping a plurality of substrates therein. The first and second end effectors can be selectively and independently movable. The robot adapter can be rotatable so as to selectively position one of the end effectors over the top entry load lock. Methods for quickly swapping processed and unprocessed substrates in the top entry load lock are also disclosed and claimed. | 11-20-2014 |
| 20140326594 | EXTENDED LIFETIME ION SOURCE - An ion source includes an ion source chamber, a cathode disposed within the ion source chamber and configured to emit electrons to generate an arc plasma, and a repeller configured to repell electrons back into the arc plasma. The ion source chamber and cathode may comprise a refractory metal. The ion source chamber further includes a gas source configured to provide a halogen species to the ion source chamber. The reactive insert is interoperative with the halogen species to yield a first etch rate of the refractory metal material within the ion source chamber under a first set of operating conditions that is less than a second etch rate of the refractory metal material within the ion source chamber under the first set of operating conditions when the reactive insert is not disposed within the ion source chamber. | 11-06-2014 |
| 20140326179 | APPARATUS AND TECHNIQUES FOR CONTROLLING ION IMPLANTATION UNIFORMITY - A system to control an ion beam in an ion implanter includes a detector to perform a plurality of beam current measurements of the ion beam along a first direction perpendicular to a direction of propagation of the ion beam. The system also includes an analysis component to determine a beam current profile based upon the plurality of beam current measurements, the beam current profile comprising a variation of beam current along the first direction; and an adjustment component to adjust a height of the ion beam along the first direction when the beam current profile indicates the beam height is below a threshold. | 11-06-2014 |
| 20140324372 | SYSTEM AND METHOD FOR ANALYZING VOLTAGE BREAKDOWN IN ELECTROSTATIC CHUCKS - A system, instructions and a method of determining when an impending failure is likely to occur absent corrective action are disclosed. The system samples the output of a power supply which powers an electrostatic chuck, and determines when that output is outside acceptable limits. The output is sampled at a sufficiently high frequency so as to detect transient anomalies, which are not detectable at lower sampling rates. In some embodiments, the output is converted to a frequency spectrum. The empirical model is compared to known good reference models and, in some embodiments, failure reference models of known failure modes to determine whether an impending failure will occur, and which type of failure. | 10-30-2014 |
| 20140320012 | SELF-CLEANING RADIO FREQUENCY PLASMA SOURCE - A self-cleaning radio frequency (RF) plasma source for a semiconductor manufacturing process is described. Various examples provide an RF plasma source comprising an RF antenna and a rotatable dielectric sleeve disposed around the RF antenna. The dielectric is positioned between a process chamber and cleaning chamber such that portions of the surface of the dielectric may be exposed to either the process chamber or the cleaning chamber. As material is deposited on the outer surface of the dielectric in the process chamber, the dielectric sleeve is rotated so that the portion containing the buildup is exposed to the cleaning chamber. A sputtering process in the cleaning chamber removes the buildup from the surface of the sleeve. The dielectric sleeve is then rotated so that it exposed to the process chamber. Other embodiments are disclosed and claimed. | 10-30-2014 |
| 20140318455 | LOW EMISSIVITY ELECTROSTATIC CHUCK - An electrostatic chuck includes a heater and an electrode disposed on the heater. The electrostatic chuck also includes an insulator layer and coating disposed on the insulator, where the coating is configured to support an electrostatic field generated by the electrode system to attract a substrate thereto. | 10-30-2014 |
| 20140306474 | SPRING RETAINED END EFFECTOR CONTACT PAD - An end effector is disclosed for use in substrate processing. The end effector includes a effector body portion, a contact pad pocket formed in the end effector body, a spring retaining pocket formed in the end effector body adjacent the contact pad pocket and extending to an edge of the end effector body, and a pair of through-holes extending from the spring retaining pocket to the contact pad pocket. The end effector can include a contact pad seated within the contact pad pocket, the contact pad having at least one retaining channel formed therein, and a retaining spring having a pair of retaining arms extending from the retaining spring pocket through the through-holes and into the contact pad pocket. The retaining arms may extend at least partially into the at least one retaining channel of the contact pad and may thereby restrict movement of the contact pad. | 10-16-2014 |
| 20140306127 | METHOD AND SYSTEM FOR MODIFYING SUBSTRATE RELIEF FEATURES USING ION IMPLANTATION - A method of treating resist features comprises positioning, in a process chamber, a substrate having a set of patterned resist features on a first side of the substrate and generating a plasma in the process chamber having a plasma sheath adjacent to the first side of the substrate. The method may further comprise modifying a shape of a boundary between the plasma and the plasma sheath with a plasma sheath modifier so that a portion of the shape of the boundary is not parallel to a plane defined by a front surface of the substrate facing the plasma, wherein ions from the plasma impinge on the patterned resist features over a wide angular range during a first exposure. | 10-16-2014 |
| 20140273502 | TECHNIQUES TO MITIGATE STRAGGLE DAMAGE TO SENSITIVE STRUCTURES - A method for processing a substrate includes providing a set of patterned structures separated by a first gap on the substrate and directing first implanting ions to the substrate at a first ion energy, where the first implanting ions are effective to impact the substrate in regions defined by the first gap. The method also includes directing depositing ions to the substrate where the second ions are effective to deposit material on at least a portion of the set of patterned structures to form expanded patterned structures, where the expanded patterned structures are characterized by a second gap smaller than the first gap. The method further includes directing second implanting ions to the substrate at a second ion energy, where the second implanting ions effective to impact the substrate in regions defined by the second gap, the second ion energy comprising a higher ion energy than the first ion energy. | 09-18-2014 |
| 20140273330 | METHOD OF FORMING SINGLE SIDE TEXTURED SEMICONDUCTOR WORKPIECES - Methods of creating a workpiece having a smooth side and a textured side are disclosed. In some embodiments, a first side of a workpiece is doped, using ion implantation or diffusion, to create a doped layer. This doped layer of the first side may be more resistant to chemical treatment than the second side of the workpiece. This allows the second side of the workpiece to be textured without capping or otherwise protecting the doped first side, even though the doped layer of the first side physically contacts the chemical treatment. In some embodiments, a p-type dopant is used to create the doped layer. In some embodiments, the workpiece is processed to form a solar cell. | 09-18-2014 |
| 20140272728 | TECHNIQUES FOR PROCESSING PHOTORESIST FEATURES USING IONS - A method of treating a substrate includes directing first ions over a first range of angles to one or more photoresist features disposed on the substrate, the first ions effective to generate an altered layer in the one or more photoresist features, the altered surface layer encapsulating an inner portion of the one or more photoresist features, and directing second ions different from the first ions over a second range of angles to the one or more photoresist features, the second ions effective to generate gaseous species in the inner regions of the one or more photoresist features. | 09-18-2014 |
| 20140272179 | APPARATUS AND TECHNIQUES FOR ENERGETIC NEUTRAL BEAM PROCESSING - A processing system includes a plasma source chamber to generate a plasma; an extraction assembly adjacent the plasma source chamber having an extraction plate and a beam modifier, the extraction plate defining an extraction plate plane and an aperture to extract ions from the plasma source chamber into an ion beam, the beam modifier adjacent to the extraction plate and operative to adjust an ion beam trajectory angle of the ion beam with respect to a perpendicular to the extraction plate plane; and a neutralizer to receive the ion beam extracted by the extraction assembly, convert the ion beam to a neutral beam and direct the neutral beam towards a substrate, the neutralizer having one or more neutralizer plates arranged at a neutralizer plate angle, the extraction assembly and the neutralizer interoperative to provide an ion beam incident angle of the ion beam with respect to the neutralizer plates. | 09-18-2014 |
| 20140271048 | High Throughput, Low Volume Clamshell Load Lock - A load lock having a reduced volume, thereby allowing faster pumping and venting, is disclosed. The load lock uses a movable bottom wall to modify the volume of the chamber to be pumped. In a first position, the movable wall is disposed so as to create a small internal volume. In a second position, the bottom wall is moved downward, allowing the workpiece to be in contact with a process chamber or an exit aperture. The bottom wall may be sealed in the first position through the use of a sealing mechanism, such as a magnetic clamp. The bottom wall may also include a workpiece holding mechanism. The top wall may be a removable cover, which is moved by an actuator. A robotic mechanism may supply workpieces to the load lock while the top wall is in the open position. | 09-18-2014 |
| 20140270905 | ROTARY FLEX UNION - A rotary union is disclosed for use in semiconductor processing applications. The rotary is coupled between a platen base and a platen of a rotating platen assembly. The rotary union includes a coiled flexible tube member for passing a flow of cryogenic fluid to the platen for cooling during an ion implant procedure. The coiled flexible tube member has a first configuration associated with a non-rotated position of the platen and a second configuration associated with a rotated position of the platen. In the first configuration the coiled flexible tube member has a first bend radius, and in the second configuration the coiled flexible tube member has a second bend radius that is smaller than first bend radius. The rotary union also includes a base with a peripheral wall that restricts movement of the coiled flexible tube member as it cycles between the first and second configurations. | 09-18-2014 |
| 20140268453 | SUPERCONDUCTING FAULT CURRENT LIMITER SYSTEM - A current limiter system includes a superconducting fault current limiter (SCFCL) operative to conduct load current during a normal operation state in which the SCFCL is in a superconducting state. The current limiter system also includes a shunt reactor connected in an electrically parallel fashion to the SCFCL and configured to conduct less current than the SCFL in the normal operation state, and a protection switch connected in electrical series with the SCFCL and shunt reactor and configured to disconnect the SCFCL for a predetermined time from a load current path during a fault condition after fault current exceeds a threshold current value. | 09-18-2014 |
| 20140265853 | SYSTEM AND METHOD FOR PLASMA CONTROL USING BOUNDARY ELECTRODE - An ion source may include a chamber configured to house a plasma comprising ions to be directed to a substrate and an extraction power supply configured to apply an extraction terminal voltage to the plasma chamber with respect to a voltage of a substrate positioned downstream of the chamber. The system may further include a boundary electrode voltage supply configured to generate a boundary electrode voltage different than the extraction terminal voltage, and a boundary electrode disposed within the chamber and electrically coupled to the boundary electrode voltage supply, the boundary electrode configured to alter plasma potential of the plasma when the boundary electrode voltage is received. | 09-18-2014 |
| 20140265849 | HARDWARE PLASMA INTERLOCK SYSTEM - A hardware interlock system for monitoring operation of RF plasma sources. The hardware interlock system includes an RF generator operative to transmit a forward RF power used to generate plasma in a plasma chamber. A derivative based hardware interlock circuit is coupled in series with the RF generator. The derivative based hardware interlock circuit determines a reflected RF power derivative value indicative of the speed of change in reflected RF power values in the RF plasma ion source. An analog/digital (A/D) logic circuit is coupled with the derivative based hardware interlock circuit. The A/D logic circuit can shut down the RF generator output when the reflected RF power derivative value exceeds a threshold. | 09-18-2014 |
| 20140265394 | COMPOSITE END EFFECTORS - An end effector includes a base, a plurality of fingers extending from the base, and a plurality of pads disposed on each of said fingers to support a substrate. The fingers comprise a carbon fiber material and taper from a first diameter and first wall thickness proximate said base to a second diameter smaller than said first diameter and second wall thickness smaller than said first wall thickness distal said base. A method includes adhering a plurality of pads along a plurality of tapered fingers, and adhering proximal ends of the plurality of tapered fingers with corresponding recesses of a base. The assembled pads, tapered fingers and base are placed on a fixture such that top surfaces of the plurality of pads rest on a top surface of the fixture and the assembly is held in place on the fixture until the adhesive has cured at room temperature. | 09-18-2014 |
| 20140265393 | WAFER HANDLING APPARATUS - Disclosed is an end effector apparatus including a base including a wrist coupling component. The base may be substantially triangular in shape. A plurality of fingers extends from the base. Each finger includes a plurality of wafer support pads for supporting wafers being processed. Each finger has a width dimension, a height dimension and a length dimension, wherein the height dimension tapers smaller along at least a tip portion of the finger. | 09-18-2014 |
| 20140265392 | WAFER HANDLING APPARATUS - Disclosed is a wafer support and alignment apparatus. The wafer support and alignment apparatus includes a wafer support component adapted to seat, align and support a wafer. The wafer support component includes at least one flat portion to support the wafer, at least one alignment lip portion protruding upward from the at least one flat portion, and at least one recessed pocket carved out of a portion of the at least one base portion. The at least one recessed pocket is adapted to receive at least one pad. | 09-18-2014 |
| 20140265093 | WORKPIECE SUPPORT STRUCTURE WITH FOUR DEGREE OF FREEDOM AIR BEARING FOR HIGH VACUUM SYSTEMS - A workpiece adjustment assembly is disclosed. The assembly can include a shaft, a spherical bearing, and a wafer support. A spherical housing receives the spherical bearing and allows the bearing to rotate therein. The housing and bearing may form an air bearing. A seal may be formed in the housing to prevent gas from the air bearing and the ambient atmosphere from migrating to a process chamber side of the housing. A set of spherical air pads may be positioned on an ambient side of the bearing to press the bearing against the housing when the process chamber is not under vacuum conditions. The seal can include a set of differentially pumped grooves. The spherical bearing enables the wafer manipulation end, and a wafer attached thereto, to be moved with four degrees of freedom. The arrangement facilitates isocentric scanning of a workpiece. Methods for using the assembly are also disclosed. | 09-18-2014 |
| 20140264069 | WORKPIECE SUPPORT STRUCTURE WITH FOUR DEGREE OF FREEDOM AIR BEARING FOR HIGH VACUUM SYSTEMS - A workpiece adjustment assembly is disclosed. The assembly can include a shaft, a spherical bearing, and a wafer support. A spherical housing receives the spherical bearing and allows the bearing to rotate therein. The housing and bearing may form an air bearing. A seal may be formed in the housing to prevent gas from the air bearing and the ambient atmosphere from migrating to a process chamber side of the housing. A set of spherical air pads may be positioned on an ambient side of the bearing to press the bearing against the housing when the process chamber is not under vacuum conditions. The seal can include a set of differentially pumped grooves. The spherical bearing enables the wafer manipulation end, and a wafer attached thereto, to be moved with four degrees of freedom. The arrangement facilitates isocentric scanning of a workpiece. Methods for using the assembly are also disclosed. | 09-18-2014 |
| 20140262492 | HIGH VOLTAGE BUSING FOR CRYOGENICS APPLICATIONS - An electrical bushing is disclosed for use in high voltage cryogenic applications. The bushing including first and second bushing portions and an electrical conductor disposed longitudinally within the portions. The electrical conductor has a first terminal extending from the first bushing portion and a second terminal extending from the second bushing portion. The first terminal is configured to couple to a first electrical element at ambient temperature, and the second terminal is configured to couple to a second electrical element at cryogenic temperature. The first and second bushing portions comprise a base insulator material, while the first bushing portion further comprises an environmental protection layer disposed over the base insulator portion. | 09-18-2014 |
| 20140262157 | WAFER PLATEN THERMOSYPHON COOLING SYSTEM - Disclosed is a thermosyphon system for cooling a platen in an ion implantation system. The thermosyphon system may include a vacuum chamber housing at least one wafer platen and a phase separator tank operative to contain both a liquid and gas phases of an element. A re-condensing cold head is exposed within the phase separator tank and is operative to condense the element from its gas phase to its liquid phase. This creates a convection driven closed loop pipe configuration. The closed loop pipe configuration includes a liquid phase pipe to carry the lower temperature liquid phase from the phase separator tank to the platen in the vacuum chamber. A reaction with the warmer platen converts the liquid phase to the gas phase. A gas phase pipe carries the higher temperature gas phase from the platen in the vacuum chamber back to the phase separator tank. | 09-18-2014 |
| 20140261179 | ION SOURCE - An ion source includes an ion source chamber having a longitudinal axis, the ion source chamber operative to define a plasma therein. The ion source also includes a split solenoid assembly comprising a first solenoid and a second solenoid that are mutually disposed along opposite sides of the ion source chamber, where each of the first solenoid and second solenoid comprises a metal member having a long axis parallel to the longitudinal axis of the ion source chamber, and a main coil having a coil axis parallel to the long axis and comprising a plurality of windings that circumscribe the metal member. The main coil defines a coil footprint that is larger than an ion source chamber footprint of the ion source chamber. | 09-18-2014 |
| 20140256121 | TECHNIQUES AND APPARATUS FOR HIGH RATE HYDROGEN IMPLANTATION AND CO-IMPLANTION - An apparatus for hydrogen and helium implantation is disclosed. The apparatus includes a plasma source system to generate helium ions and hydrogen molecular ions comprising H | 09-11-2014 |
| 20140252787 | Venturi Assisted Gripper - A gripper system which utilizes two different suction systems is disclosed. This gripper system utilizes one suction system to pick up an item, while using the second suction system to hold the item. In some embodiments, a Venturi device based suction system is used as the first suction system to pick up the item, as this type of system is proficient at picking up items without requiring initial contact to create a seal. In some embodiments, a vacuum based system is used as the second suction system, as this type of system is able to hold items cost effectively. | 09-11-2014 |
| 20140252720 | FLOATING HIGH VACUUM SEAL CARTRIDGE - An apparatus that uses a combination of mechanical contact bearings and air bearings is disclosed. The apparatus includes a fixed seal housing, attached to a process chamber and a floating seal cartridge, which is disposed in proximity to the fixed seal housing. A shaft is disposed with an aperture in the process chamber, the central opening in the fixed seal housing and the second central opening in the floating seal cartridge. A first air bearing is created between the shaft and the floating seal cartridge in the second central opening. A second air bearing is created between the floating seal cartridge and the fixed seal housing. In this way, the floating seal cartridge is free to move with the shaft radially, while still maintaining a seal between the process chamber and the external environment. | 09-11-2014 |
| 20140251677 | INSULATOR PROTECTION - Insulating materials disposed within the housing are protected through the use of removable protective layers, which can be fit over the insulating components. In some embodiments, these removable protective layers are dimensioned so as to fit over the insulating components without the use of any fasteners. In other embodiments, a fastener, such as a set screw or clip, may be used to hold the removable protective layer in place. These removable protective layers can be placed over any insulating component in a housing, such as a high voltage feed through insulator. During preventative maintenance cycles, the coated removable protective layer is removed from the insulating component, and a new protective layer is used to cover the insulating component. | 09-11-2014 |
| 20140241848 | ELECTRIC SWITCHABLE MAGNET SLITVALVE - A slitvalve that uses magnetic energy to move a door in a direction normal to the plane of the wall is disclosed. An electrically switchable magnet is used to draw the door toward the wall to seal an aperture in the wall. Compressed Dry Air or other mechanisms may be employed to move the door between a first open position and a second closed position. A method of passing a workpiece between two different environments utilizing this magnetic slitvalve is also disclosed. | 08-28-2014 |
| 20140234554 | METHOD AND SYSTEM FOR PLASMA-ASSISTED ION BEAM PROCESSING - A system for processing a substrate may include a first chamber operative to define a first plasma and a second chamber adjacent the first chamber, where the second chamber is electrically isolated from the first chamber, and configured to define a second plasma. The system may also include an extraction assembly disposed between the first chamber and second chamber to provide at least plasma isolation between the first plasma and the second plasma, a substrate assembly configured to support the substrate in the second chamber; and a biasing system configured to supply a plurality of first voltage pulses to direct first ions from the first plasma through the second chamber towards the substrate during one time period, and to supply a plurality of second voltage pulses to generate the second plasma and to attract second ions from the second plasma during another time period. | 08-21-2014 |
| 20140216537 | METALLIZATION PROCESS FOR SOLAR CELLS - Several embodiments of a metallization process are disclosed, which achieve lower contact resistance and higher conductivity than methods currently employed with solar cells. These parameters result in a solar cell having improved performance and efficiency. In one embodiment, two different metals are used to create the metallization layer, where the first metal is selected for superior ohmic contact to the substrate and the second metal is selected based on conductivity. In a second embodiment, a first metal is evaporated or sputtered on the substrate. A second metal is then screen printed on the substrate. A removal step, such as etching is then performed to remove unwanted metal from the substrate. | 08-07-2014 |
| 20140213014 | ION IMPLANTATION BASED EMITTER PROFILE ENGINEERING VIA PROCESS MODIFICATIONS - A method of tailoring the dopant profile of a workpiece by modulating one or more operating parameters is disclosed. In one embodiment, the workpiece may be a solar cell and the desired dopant profile may include a heavily doped surface region and a highly doped region. These two regions can be generated by varying one or more of the parameters of the ion implanter. For example, the extraction voltage may be changed to affect the energy of the implanted ions. The ionization energy can be changed to affect the species of ions being generated from the source gas. In another embodiment, the source gasses that are ionized may be changed to affect the species being generated. After the implant has been performed, thermal processing is performed which minimizes the diffusion of the ions in the workpiece. | 07-31-2014 |
| 20140209016 | REMOVING A SHEET FROM THE SURFACE OF A MELT USING GAS JETS - In one embodiment, a sheet production apparatus comprises a vessel configured to hold a melt of a material. A cooling plate is disposed proximate the melt and is configured to form a sheet of the material on the melt. A first gas jet is configured to direct a gas toward an edge of the vessel. A sheet of a material is translated horizontally on a surface of the melt and the sheet is removed from the melt. The first gas jet may be directed at the meniscus and may stabilize this meniscus or increase local pressure within the meniscus. | 07-31-2014 |
| 20140170783 | MASK ALIGNMENT SYSTEM FOR SEMICONDUCTOR PROCESSING - A mask alignment system for providing precise and repeatable alignment between ion implantation masks and workpieces. The system includes a mask frame having a plurality of ion implantation masks loosely connected thereto. The mask frame is provided with a plurality of frame alignment cavities, and each mask is provided with a plurality of mask alignment cavities. The system further includes a platen for holding workpieces. The platen may be provided with a plurality of mask alignment pins and frame alignment pins configured to engage the mask alignment cavities and frame alignment cavities, respectively. The mask frame can be lowered onto the platen, with the frame alignment cavities moving into registration with the frame alignment pins to provide rough alignment between the masks and workpieces. The mask alignment cavities are then moved into registration with the mask alignment pins, thereby shifting each individual mask into precise alignment with a respective workpiece. | 06-19-2014 |
| 20140169402 | TEMPERATURE MONITOR FOR DEVICES IN AN ION IMPLANT APPARATUS - An ion implant apparatus configured to measure the temperature or monitor the degradation of components in the apparatus is provided. The ion implant apparatus may include a platen configured to move in a first direction, a mask frame to hold one or more masks disposed on the platen, a first optical sensor configured to project an optical beam to a second optical sensor, and a measurement bar disposed on the mask frame, the measurement bar raised above the surface of the mask frame to interrupt the optical beam when the platen moves in the first direction. | 06-19-2014 |
| 20140165908 | TRANSFER CHAMBER AND METHOD OF USING A TRANSFER CHAMBER - An ion implanter and method for facilitating expeditious performance of maintenance on a component of the ion implanter in a manner that reduces downtime while increasing throughput of the ion implanter. The ion implanter includes a process chamber, a transfer chamber connected to the process chamber, a first isolation gate configured to controllably seal the transfer chamber from the process chamber, and a second isolation gate configured to controllably seal the transfer chamber from an atmospheric environment, wherein a component of the ion implanter can be transferred between the process chamber and the transfer chamber for performing maintenance on the component outside of the process chamber. Performing maintenance on a component of the ion implanter includes the steps of transferring the component from the process chamber to the transfer chamber, sealing the transfer chamber, venting the transfer chamber to atmospheric pressure, an opening the transfer chamber to an atmospheric environment. | 06-19-2014 |
| 20140165906 | MAGNETIC MASKS FOR AN ION IMPLANT APPARATUS - An ion implant apparatus configured to measure the temperature or monitor the degradation of components in the apparatus is provided. The ion implant apparatus may include a platen configured to move in a first direction, a mask frame to hold one or more masks disposed on the platen, a first optical sensor configured to project an optical beam to a second optical sensor, and a measurement bar disposed on the mask frame, the measurement bar raised above the surface of the mask frame to interrupt the optical beam when the platen moves in the first direction. | 06-19-2014 |
| 20140162435 | Ion Implant For Defect Control - Various methods for implanting dopant ions into a three dimensional feature of a semiconductor wafer are disclosed. The implant temperature may be varied to insure that the three dimensional feature, after implant, has a crystalline inner core, which is surrounded by an amorphized surface layer. The crystalline core provides a template from which the crystalline structure for the rest of the feature can be regrown. In some embodiments, the implant energy and the implant temperature may each be modified to achieve the desired crystalline inner core with the surrounding amorphized surface layer. | 06-12-2014 |
| 20140162414 | TECHNIQUE FOR SELECTIVELY PROCESSING THREE DIMENSIONAL DEVICE - A method to selectively process a three dimensional device, comprising providing a substrate having a first surface that extends horizontally, the substrate comprising a structure containing a second surface that extends vertically from the first surface; providing a film on the substrate, the film comprising carbon species; and etching a selected portion of the film by exposing the selected portion of the film to an etchant containing hydrogen species, where the etchant excludes oxygen species and fluorine species. | 06-12-2014 |
| 20140154834 | USE OF DOPANTS WITH DIFFERENT DIFFUSIVITIES FOR SOLAR CELL MANUFACTURE - A method of tailoring the dopant profile of a substrate by utilizing two different dopants, each having a different diffusivity is disclosed. The substrate may be, for example, a solar cell. By introducing two different dopants, such as by ion implantation, furnace diffusion, or paste, it is possible to create the desired dopant profile. In addition, the dopants may be introduced simultaneously, partially simultaneously, or sequentially. Dopant pairs preferably consist of one lighter species and one heavier species, where the lighter species has a greater diffusivity. For example, dopant pairs such as boron and gallium, boron and indium, phosphorus and arsenic, and phosphorus and antimony, can be utilized. | 06-05-2014 |
| 20140120647 | TECHNIQUES FOR MANUFACTURING DEVICES - Techniques for manufacturing a device are disclosed. In accordance with one exemplary embodiment, the technique may be realized as a method for forming a solar cell. The method may comprise: implanting p-type dopants into a substrate via a blanket ion implantation process; implanting n-type dopants into the substrate via the blanket ion implantation process; and performing a first annealing process to form the p-type region and performing a second annealing process to form a second n-type region. | 05-01-2014 |
| 20140120478 | TECHNIQUES FOR PATTERNING RESIST - A technique for patterning a substrate is disclosed. In accordance with one exemplary embodiment, the technique may be realized as a method for patterning a substrate. The method may comprise: providing a resist on the substrate; introducing one or more species of impurities into the resist; selectively exposing a first portion of the resist to radiation while a second portion of the resist is not exposed to the radiation; exposing the resist to a developer and removing the first portion of the resist exposed to the radiation from the substrate; and exposing the resist at a temperature higher than a room temperature but lower than glass transition temperature of the resist. | 05-01-2014 |
| 20140110619 | VALVE - A valve includes a gate and an actuator. The gate has a gate opening with a first seal fixed to the gate and positioned along a periphery of the gate opening. The gate also has a blocking portion with a second seal fixed to the gate and positioned along a periphery of the blocking portion. The actuator is configured to move the gate between an open position and a closed position, wherein the gate opening is aligned to a chamber opening in a chamber wall and the first seal engages a sealing surface of the chamber wall in the open position and wherein the blocking portion is aligned to the opening in the chamber wall and the second seal engages the sealing surface of the chamber wall in the closed position. The valve is capable of operating in harsh environments. | 04-24-2014 |
| 20140110596 | APPARATUS FOR TREATING ION BEAM - An ion beam scanning assembly includes a set of scanning electrodes defining a gap to accept an ion beam and scan the ion beam in a first plane, and a multipole electrostatic lens system comprising a plurality of electrodes arranged along a portion of a path of travel of the ion beam bounded by the pair of scanning electrodes, the multipole electrostatic lens system configured to shape the ion beam in a direction perpendicular to the first plane. | 04-24-2014 |
| 20140106571 | BIASING SYSTEM FOR A PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a process chamber housing defining a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate plasma in the process chamber, and a biasing system. The biasing system is configured to bias the platen to attract ions from the plasma towards the workpiece during a first processing time interval and configured to bias the platen to repel ions from the platen towards interior surfaces of the process chamber housing during a cleaning time interval. The cleaning time interval is separate from the first processing time interval and occurring after the first processing time interval. | 04-17-2014 |
| 20140102563 | Gas Transport Across a High Voltage Potential - Disclosed are techniques to reduce the effects of Paschen events from occurring within a gas transport system. A passive isolation assembly may be used to bridge a gas being transported from a low potential environment to a high potential environment. The passive isolation assembly may include a non-conductive axially bored transport insulator. An irregularly shaped non-conductive isolation tracking insulator may be in direct contact with and surrounding the transport insulator. The passive isolation assembly may also include an electrically conductive front end sealing cap at earth ground potential that has an opening that is adapted to couple with a source gas transport line and an electrically conductive rear end sealing cap at a high voltage potential that has an opening adapted to couple with a destination gas transport line. | 04-17-2014 |
| 20140099782 | METHOD AND APPARATUS FOR THERMAL CONTROL OF ION SOURCES AND SPUTTERING TARGETS - A method and apparatus are disclosed for controlling a semiconductor process temperature. In one embodiment a thermal control device includes a heat source and a housing comprising a vapor chamber coupled to the heat source. The vapor chamber includes an evaporator section and a condenser section. The evaporator section has a first wall associated with the heat source, the first wall having a wick for drawing a working fluid from a lower portion of the vapor chamber to the evaporator section. The condenser section coupled to a cooling element. The vapor chamber is configured to transfer heat from the heat source to the cooling element via continuous evaporation of the working fluid at the evaporator section and condensation of the working fluid at the condenser section. Other embodiments are disclosed and claimed. | 04-10-2014 |
| 20140097752 | Inductively Coupled Plasma ION Source Chamber with Dopant Material Shield - A plasma ion source including a plasma chamber, gas inlets, an RF antenna, an RF window, an extraction plate, a window shield, and a chamber liner. The RF window may be positioned intermediate the RF antenna and the plasma chamber. The window shield may be disposed intermediate the RF widow and the interior of the plasma chamber and the chamber liner may cover the interior surface of the plasma chamber. During operation of the ion source, the window shield sustains ionic bombardment that would otherwise be sustained by the RF window. Fewer impurity ions are therefore released into the plasma chamber. Simultaneously, additional dopant atoms are released from the window shield into the plasma chamber. Ionic bombardment is also sustained by the chamber liner, which also contributes a quantity of dopant atoms to the plasma chamber. Dopant ion production within the plasma chamber is thereby increased while impurities are minimized. | 04-10-2014 |
| 20140096713 | APPARATUS FOR FLOAT GROWN CRYSTALLINE SHEETS - An apparatus for forming a crystalline sheet from a melt may include a crucible to contain the melt. The apparatus may also include a cold block configured to deliver a cold region proximate a surface of the melt, the cold region operative to generate a crystalline front of the crystalline sheet and a crystal puller configured to draw the crystalline sheet in a pull direction along the surface of the melt, wherein a perpendicular to the pull direction forms an angle with respect to the crystalline front of less than ninety degrees and greater than zero degrees. | 04-10-2014 |
| 20140077431 | System and Method for 2D Workpiece Alignment - A carrier capable of holding one or more workpieces is disclosed. The carrier includes movable projections located along the sides of each cell in the carrier. This carrier, in conjunction with a separate alignment apparatus, aligns each workpiece within its respective cell against several alignment pins, using a multiple step alignment process to guarantee proper positioning of the workpiece in the cell. First, the workpieces are moved toward one side of the cell. Once the workpieces have been aligned against this side, the workpieces are then moved toward an adjacent orthogonal side such that the workpieces are aligned to two sides of the cell. Once aligned, the workpiece is held in place by the projections located along each side of each cell. In addition, the alignment pins are also used to align the associated mask, thereby guaranteeing that the mask is properly aligned to the workpiece. | 03-20-2014 |
| 20140070697 | Internal RF Antenna With Dielectric Insulation - Disclosed is a radio frequency (RF) antenna for plasma ion sources. The RF antenna includes a low-resistance metal tube having an inner and outer diameter. A low friction polymer tube also having an inner and outer diameter surrounds the low-resistance metal tube. The inner diameter of the polymer tube is slightly larger than the outer diameter of the low-resistance metal tube. A pre-formed quartz glass tube encases the low friction polymer tube and low-resistance metal tube. The quartz glass tube is pre-formed in a desired shape. A guide wire is attached inside one end of the low-resistance hollow metal tube. The flexible low friction polymer tube containing the low-resistance metal tubed may then be threaded through the quartz glass tube. | 03-13-2014 |
| 20140061180 | ELECTROSTATIC CHUCK WITH RADIATIVE HEATING - An electrostatic chuck is formed using materials that are optically transparent to a range of frequencies, such as infrared radiation. The invention discloses several methods for achieving optical transparency. The chuck electrode can be formed having a mesh pattern designed with a specific open area percentage to provide adequate wafer clamping force while still allowing sufficient levels of infrared radiation to pass through. Alternatively, the chuck electrode can also be made from a transparent conductive film. A workpiece is disposed on one surface of the chuck, and a radiative heat source is positioned on the opposite side of the chuck. A reflector plate may be used to reflect the infrared radiation toward the chuck and the wafer. The spacing of the radiation sources and the shape of the reflector plate may be modified to focus more radiation on a particular portion of the workpiece if desired. | 03-06-2014 |
| 20140042337 | INDUCTIVELY COUPLED PLASMA ION SOURCE WITH MULTIPLE ANTENNAS FOR WIDE ION BEAM - A wide ion beam source includes a plurality of RF windows arranged in a predetermined relationship, a single plasma chamber disposed on a first side of the plurality of RF windows, a plurality of RF antennas, each RF antenna of the plurality of RF antennas disposed on a second side of a respective RF window of the plurality of RF windows, the second side being opposite the first side, and a plurality of RF sources, each RF source coupled to a respective RF antenna of the plurality of RF antennas, wherein a difference in frequency of a first RF signal produced by a first RF source coupled to a first RF antenna from that of a second RF signal produced by a second RF source coupled to an RF antenna adjacent to the first RF antenna is greater than 10 kHz. | 02-13-2014 |
| 20140038393 | METHOD AND SYSTEM FOR ION-ASSISTED PROCESSING - A method of processing a substrate includes performing a first exposure that comprises generating a plasma containing reactive gas ions in a plasma chamber and generating a bias voltage between the substrate and the plasma chamber. The method also includes providing a plasma sheath modifier having an aperture disposed between the plasma and substrate and operable to direct the reactive gas ions toward the substrate, and establishing a pressure differential between the plasma chamber and substrate region while the reactive gas ions are directed onto the substrate. | 02-06-2014 |
| 20140037858 | ANISOTROPIC SURFACE ENERGY MODULATION BY ION IMPLANTATION - Methods of modulating a material's surface energies through the implantation of ions, such as by using a plasma processing apparatus with a plasma sheath modifier, are disclosed. Two or more ion implants may be performed, where the implant regions of two of the ion implants overlap. The species implanted by a first implant may increase the hydrophobicity of the surface, wherein the species implanted by the second implant may decrease the hydrophobicity of the surface. In this way, a workpiece can be implanted such that different portions of its surface have different surface energies. | 02-06-2014 |
| 20140034843 | HYBRID ELECTROSTATIC LENS WITH INCREASED NATURAL FREQUENCY - A composite electrostatic rod may include a body comprising a length L and cross sectional area A. The body may include an outer portion comprising a first material, and a core comprising a second material different than the first material and surrounded by the outer portion, wherein a natural frequency of the composite electrostatic rod is greater than that of a graphite rod having the length L and cross sectional area A. | 02-06-2014 |
| 20140034611 | ENHANCED ETCH AND DEPOSITION PROFILE CONTROL USING PLASMA SHEATH ENGINEERING - A plasma processing tool is used to deposit material on a workpiece. For example, a method for conformal deposition of material is disclosed. In this embodiment, the plasma sheath shape is modified to allow material to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of different features can be deposited onto. In another embodiment, a plasma processing tool is used to etch a workpiece. In this embodiment, the plasma sheath shape is altered to allow ions to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of differently shaped features can be created. | 02-06-2014 |
| 20140030844 | BIFACIAL SOLAR CELL USING ION IMPLANTATION - An improved bifacial solar cell is disclosed. In some embodiments, the front side includes an n-type field surface field, while the back side includes a p-type emitter. In other embodiments, the p-type emitter is on the front side. To maximize the diffusion of majority carriers and lower the series resistance between the contact and the substrate, the regions beneath the metal contacts are more heavily doped. Thus, regions of higher dopant concentration are created in at least one of the FSF or the emitter. These regions are created through the use of selective implants, which can be performed on one or two sides of the bifacial solar cell to improve efficiency. | 01-30-2014 |
| 20140027274 | Three Dimensional Metal Deposition Technique - A plasma processing apparatus is disclosed. The plasma processing apparatus includes a source configured to generate a plasma in a process chamber having a plasma sheath adjacent to the front surface of a workpiece, and a plasma sheath modifier. The plasma sheath modifier controls a shape of a boundary between the plasma and the plasma sheath so a portion of the shape of the boundary is not parallel to a plane defined by a front surface of the workpiece facing the plasma. A metal target is affixed to the back surface of the plasma sheath modifier so as to be electrically insulated from the plasma sheath modifier and is electrically biased such that ions exiting the plasma and passing through an aperture in the plasma sheath modifier are attracted toward the metal target. These ions cause sputtering of the metal target, allowing three dimensional metal deposition of the workpiece. | 01-30-2014 |
| 20140023461 | ELECTROSTATIC CHARGE REMOVAL FOR SOLAR CELL GRIPPERS - A manufacturing system includes a gantry module, having an end effector, for moving workpieces from a conveyor system to a working area, such as a swap module. The swap module removes a matrix of processed workpieces from a load lock and place a matrix of unprocessed workpieces in its place. The processed workpieces are then moved by the gantry module back to the conveyor. Due to the speed of operation, the end effector may build up excessive electrostatic charge. To remove this built up charge, grounded electrically-conductive brushes are strategically positioned so that, as the end effector moves during normal operation, it comes in contact with these brushes. This removes this built up charge on the end effector, without affecting throughput. In another embodiment, the end effector moves over the brushes while the swap module is moving matrix to and from the load lock. | 01-23-2014 |
| 20140021373 | BEAMLINE ELECTRODE VOLTAGE MODULATION FOR ION BEAM GLITCH RECOVERY - An ion implantation system and method are disclosed in which glitches in voltage are minimized by use of a modulated power supply system in the implanter. The modulated power supply system includes a traditional power supply and a control unit associated with each power supply, where the control unit is used to isolate the power supply from an electrode if a glitch or arc is detected. The control unit then restores connectivity after the glitch condition has been rectified. | 01-23-2014 |
| 20140001747 | Vacuum Insulated Cryogenic Fluid Transfer Hose | 01-02-2014 |
| 20140001746 | Vacuum Insulated Fitting Enclosure | 01-02-2014 |
| 20130320854 | INDUCTIVELY COUPLED PLASMA FLOOD GUN USING AN IMMERSED LOW INDUCTANCE RF COIL AND MULTICUSP MAGNETIC ARRANGEMENT - An inductively coupled radio frequency plasma flood gun having a plasma chamber with one or more apertures, a gas source capable of supplying a gaseous substance to the plasma chamber, a single-turn coil disposed within the plasma chamber, and a power source coupled to the coil for inductively coupling radio frequency electrical power to excite the gaseous substance in the plasma chamber to generate plasma. The inner surface of the plasma chamber may be free of metal-containing material and the plasma may not be exposed to any metal-containing component within the plasma chamber. The plasma chamber may include a plurality of magnets for controlling the plasma and an exit aperture to enable negatively charged particles of the resulting plasma to engage an ion beam that is part of an associated ion implantation system. Magnets are disposed on opposite sides of the aperture used to manipulate the electrons of the plasma. | 12-05-2013 |
| 20130313971 | Gallium ION Source and Materials Therefore - In one embodiment, a method for generating an ion beam having gallium ions includes providing at least a portion of a gallium compound target in a plasma chamber, the gallium compound target comprising gallium and at least one additional element. The method also includes initiating a plasma in the plasma chamber using at least one gaseous species and providing a source of gaseous etchant species to react with the gallium compound target to form a volatile gallium species. | 11-28-2013 |
| 20130313443 | EXCITED GAS INJECTION FOR ION IMPLANT CONTROL - An ion source includes an ion chamber housing defining an ion source chamber, the ion chamber housing having a side with a plurality of apertures. The ion source also includes an antechamber housing defining an antechamber. The antechamber housing shares the side with the plurality of apertures with the ion chamber housing. The antechamber housing has an opening to receive a gas from a gas source. The antechamber is configured to transform the gas into an altered state having excited neutrals that is provided through the plurality of apertures into the ion source chamber. | 11-28-2013 |
| 20130302126 | MULTI-CELL ROTARY END EFFECTOR MECHANISM - A rotary end effector for use for the high speed handling of workpieces, such as solar cells, is disclosed. The rotary end effector is capable of infinite rotation. The rotary end effector has a gripper bracket, capable of supporting a plurality of grippers, arranged in any configuration, such as a 4×1 linear array. Each gripper is in communication with a suction system, wherein, in some embodiments, each gripper can be selectively enabled and disabled. Provisions are also made to allow electrical components, such as proximity sensors, to be mounted on the rotating gripper bracket. In another embodiment, an end effector with multiple surfaces, each with a plurality of grippers, is used. | 11-14-2013 |
| 20130291932 | DOPING PATTERN FOR POINT CONTACT SOLAR CELLS - Methods of doping a solar cell, particularly a point contact solar cell, are disclosed. One surface of a solar cell may require portions to be n-doped, while other portions are p-doped. At least one lithography step can be eliminated by the use of a blanket doping of species having one conductivity and a patterned counterdoping process of species having the opposite conductivity. The areas doped during the patterned implant receive a sufficient dose so as to completely reverse the effect of the blanket doping and achieve a conductivity that is opposite the blanket doping. In some embodiments, counterdoped lines are also used to reduce lateral series resistance of the majority carriers. | 11-07-2013 |
| 20130288400 | System and Method for Aligning Substrates for Multiple Implants - A system and method are disclosed for aligning substrates during successive process steps, such as ion implantation steps, is disclosed. Implanted regions are created on a substrate. After implantation, an image is obtained of the implanted regions, and a fiducial is provided on the substrate in known relation to at least one of the implanted regions. A thermal anneal process is performed on the substrate such that the implanted regions are no longer visible but the fiducial remains visible. The position of the fiducial may be used in downstream process steps to properly align pattern masks over the implanted regions. The fiducial also may be applied to the substrate before any ion implanting of the substrate is performed. The position of the fiducial with respect to an edge or a corner of the substrate may be used for aligning during downstream process steps. Other embodiments are described and claimed. | 10-31-2013 |
| 20130288394 | MAGNETIC MEMORY AND METHOD OF FABRICATION - A method of forming a magnetic memory includes providing a layer stack comprising a plurality of magnetic layers and a plurality of electrically conducting layers on a base portion of a substrate; forming a first mask feature on an outer surface of the layer stack above a first protected region and a second mask feature on the outer surface of the layer stack above a second protected region, the first mask feature and second mask feature defining an exposed region of the layer stack in portions of the layer stack therebetween; and directing ions towards exposed the region of the layer stack in an ion exposure that is effective to magnetically isolate the first protected region from the second protected region and to electrically isolate the first protected region from the second protected region without removal of the exposed region of the layer stack. | 10-31-2013 |
| 20130288393 | TECHNIQUES FOR PATTERNING MULTILAYER MAGNETIC MEMORY DEVICES USING ION IMPLANTATION - A method of patterning a substrate includes providing a layer stack comprising a plurality of layers on a base portion of the substrate, where the layer stack includes an electrically conductive layer and a magnetic layer. The method further includes forming a first mask feature on an outer surface of the layer stack above a first protected region and a second mask feature on the outer surface of the layer stack above a second protected region, and directing ions towards the layer stack to magnetically isolate and electrically isolate the first protected region from the second protected region. | 10-31-2013 |
| 20130287964 | Plasma Potential Modulated ION Implantation System - An ion implantation system including a plasma source, a mask-slit, and a plasma chamber. The plasma source is configured to generate a plasma within the plasma chamber in response to the introduction of a gas therein. The mask-slit is electrically isolated from the plasma chamber. A positive voltage bias is applied to the plasma chamber above a bias potential used to generate the plasma. The positive voltage bias drives the plasma potential to accelerate the ions to a desired implant energy. The accelerated ions pass through an aperture in the mask-slit and are directed toward a substrate for implantation. The mask-slit is electrically isolated from the plasma chamber and is maintained at ground potential with respect to the plasma. | 10-31-2013 |
| 20130287963 | Plasma Potential Modulated ION Implantation Apparatus - An ion implantation apparatus including a first plasma chamber, a second plasma chamber and an extraction electrode disposed therebetween. The first and second plasma chambers configured to house respective plasmas in response to the introduction of a different feed gases therein. The extraction electrode is electrically isolated from the plasma chamber. An extraction voltage is applied to the first plasma chamber above a bias potential used to generate the plasma therein. The extraction voltage drives the plasma potential to accelerate the ions in the first plasma to a desired implant energy. The accelerated ions pass through an aperture in the extraction electrode and are directed toward a substrate housed within the second plasma chamber for implantation. | 10-31-2013 |
| 20130285177 | MAGNETIC MEMORY AND METHOD OF FABRICATION - In one embodiment a magnetic memory includes a memory device base and a plurality of memory cells disposed on the memory cell base, where each memory cell includes a layer stack comprising a plurality of magnetic and electrically conductive layers arranged in a stack of layers common to each other memory cell. The magnetic memory further includes an implanted matrix disposed between the memory cells and surrounding each memory cell, where the implanted matrix includes component material of the layer stack of each memory cell inter mixed with implanted species, where the implanted matrix comprises a non-conducting material and a non-magnetic material, wherein each memory cell is electrically and magnetically isolated from each other memory cell. | 10-31-2013 |
| 20130277999 | VENTURI ASSISTED GRIPPER - A gripper system which utilizes two different suction systems is disclosed. This gripper system utilizes one suction system to pick up an item, while using the second suction system to hold the item. In some embodiments, a Venturi device based suction system is used as the first suction system to pick up the item, as this type of system is proficient at picking up items without requiring initial contact to create a seal. In some embodiments, a vacuum based system is used as the second suction system, as this type of system is able to hold items cost effectively. | 10-24-2013 |
| 20130270450 | DOUBLE ENDED ELECTRODE MANIPULATOR - An electrode adjustment method and apparatus are disclosed for use in workpiece processing. The assembly may include an electrode assembly having first and second ends. First and second manipulators may be coupled to the first and second ends. The manipulators may be used to selectively impart movement to the first and second ends of the electrode assembly to adjust one or more properties of an ion beam passing through the electrodes. The first and second manipulators may be independently actuatable so that the first and second ends of the electrode can be adjusted independent of one another. Methods of using the disclosed apparatus are also disclosed. | 10-17-2013 |
| 20130260544 | TECHNIQUE FOR PROCESSING A SUBSTRATE - Techniques for processing a substrate are disclosed. In one exemplary embodiment, the technique may be realized as a method for processing a substrate, the method comprising: ionizing first material and second material in an ion source chamber of an ion source, the first material being boron (B) containing material, the second material being one of phosphorous (P) containing material and arsenic (As) containing material; generating first ions containing B and second ions containing one of P and As; and extracting the first and second ions from the ion source chamber and directing the first and second ions toward the substrate. | 10-03-2013 |
| 20130260543 | TECHNIQUE FOR PROCESSING A SUBSTRATE - Techniques for processing a substrate are disclosed. In one exemplary embodiment, the technique may be realized with an ion implantation system for processing a substrate. The ion implantation system may comprise: an ion source comprising an ion source chamber, the ion source chamber including an ion source chamber wall that define an ion generation region and an extraction aperture, through which ions generated in the ion generation region are extracted; an extraction system positioned downstream of the ion source near the extraction aperture; a material source comprising a fist source containing first material, a second source containing the second material, and a first and second conduits, where the first conduit may be in communication with the first source and the ion source chamber to provide the first material from the first source to the ion source chamber, and where the second conduit may be in communication with the second source and a first region outside of the ion source chamber to provide the second material from the second source to the first region. | 10-03-2013 |
| 20130256527 | HYBRID ELECTROSTATIC LENS FOR IMPROVED BEAM TRANSMISSION - A hybrid electrostatic lens is used to shape and focus an ion beam. The hybrid electrostatic lens comprises an Einzel lens defined by an elongated tube having a first and second ends and a first electrode disposed at the first end and a second electrode disposed at the second end. The elongated tube is configured to receive a voltage bias to create an electric field within the Einzel lens as the ion beam travels through the hybrid electrostatic lens. The hybrid electrostatic lens further includes a quadrupole lens having a first stage and a second stage, where each of the stages is defined by a plurality of electrodes turned 90° with respect to each other to define a pathway in the Z direction through the elongated tube. The Einzel lens focuses the ion beam and the quadrupole lens shapes the ion beam. | 10-03-2013 |
| 20130256526 | HYBRID ELECTROSTATIC LENS FOR IMPROVED BEAM TRANSMISSION - A hybrid electrostatic lens is used to shape and focus an ion beam. The hybrid electrostatic lens comprises an Einzel lens defined by an elongated tube having a first and second ends and a first electrode disposed at the first end and a second electrode disposed at the second end. The elongated tube is configured to receive a voltage bias to create an electric field within the Einzel lens as the ion beam travels through the hybrid electrostatic lens. The hybrid electrostatic lens further includes a quadrupole lens having a first stage and a second stage, where each of the stages is defined by a plurality of electrodes turned 90° with respect to each other to define a pathway in the Z direction through the elongated tube. The Einzel lens focuses the ion beam and the quadrupole lens shapes the ion beam. | 10-03-2013 |
| 20130255577 | Method and Apparatus for Generating High Current Negative Hydrogen ION Beam - An apparatus to generate negative hydrogen ions includes an ion source operative to generate positive hydrogen ions, a first component to adjust positive molecular hydrogen ion species in the ion source, a second component to adjust extraction voltage for extraction of the positive molecular hydrogen ions from the ion source, and a charge exchange cell comprising charge exchange species to convert the extracted positive molecular hydrogen ions to negative hydrogen ions. The adjusted extraction voltage is effective to generate an ion energy to maximize negative ion current yield in the charge exchange cell based upon a product of extraction efficiency of the positive molecular hydrogen ions and a peak in charge exchange efficiency for converting a species of the positive molecular hydrogen ions to negative hydrogen ions through charge exchange between the extracted hydrogen ions and charge exchange species. | 10-03-2013 |
| 20130252349 | Finfet Device Fabrication Using Thermal Implantation - A method of forming a FinFET device. The method may include providing a substrate having a single crystalline region, heating the substrate to a substrate temperature effective for dynamically removing implant damage during ion implantation, implanting ions into the substrate while the substrate is maintained at the substrate temperature, and patterning the single crystalline region so as to form a single crystalline fin. | 09-26-2013 |
| 20130248738 | PLATEN CLAMPING SURFACE MONITORING - An ion implanter includes a platen having a clamping surface configured to support a wafer for treatment with ions, the platen also having at least one pair of electrodes under the clamping surface, a clamping power supply configured to provide an AC signal to the at least one pair of electrodes and a sensed signal representative of the AC signal, and a controller. The controller is configured to receive the sensed signal from the clamping power supply when no wafer is clamped to the clamping surface. The controller is further configured to monitor the sensed signal and determine if the sensed signal is representative of deposits on the clamping surface exceeding a predetermined deposit threshold. | 09-26-2013 |
| 20130247824 | METHOD AND SYSTEM FOR MODIFYING PHOTORESIST USING ELECTROMAGNETIC RADIATION AND ION IMPLANTION - A method of reducing surface roughness of a resist feature disposed on a substrate includes generating a plasma having a plasma sheath and ions therein. A shape of the boundary between the plasma and plasma sheath is modified using a plasma sheath modifier, so that a portion of the boundary facing the substrate is not parallel to a plane defined by the substrate. During a first exposure, the resist feature is exposed to electromagnetic radiation having a desired wavelength and the ions are accelerated across the boundary having the modified shape toward the resist features over an angular range. | 09-26-2013 |
| 20130240759 | Method and Apparatus for Clamping and Cooling a Substrate for ION Implantation - A system and method are disclosed for holding and cooling substrates during processing. A substrate clamp has an engagement portion for engaging a substrate about the inside diameter as well as a portion of the substrate surface immediately adjacent to the inside diameter. The clamp has a retracted position which enables the engagement portion to fit through the substrate ID, and an expanded position which enables the engagement portion to engage the substrate ID and the substrate surface immediately adjacent to the inside diameter. The clamp can include a conformal coating to enhance engagement between the substrate and the engagement portion. The clamp can also include an energy absorbing coating on one or more surfaces to maximize the absorption of radiative energy emitted from the substrate. Other embodiments are described and claimed. | 09-19-2013 |
| 20130234034 | APPARATUS AND METHOD FOR CONTROLLABLY IMPLANTING WORKPIECES - A plasma processing apparatus comprises a plasma source configured to produce a plasma in a plasma chamber, such that the plasma contains ions for implantation into a workpiece. The apparatus also includes a focusing plate arrangement having an aperture arrangement configured to modify a shape of a plasma sheath of the plasma proximate the focusing plate such that ions exiting an aperture of the aperture arrangement define focused ions. The apparatus further includes a processing chamber containing a workpiece spaced from the focusing plate such that a stationary implant region of the focused ions at the workpiece is substantially narrower that the aperture. The apparatus is configured to create a plurality of patterned areas in the workpiece by scanning the workpiece during ion implantation. | 09-12-2013 |
| 20130225414 | TECHNIQUES FOR IMPROVING RELIABILITY OF A FAULT CURRENT LIMITING SYSTEM - Techniques for improving reliability of a superconducting fault current limiting system (SCFCL) are provided. In one particular exemplary embodiment, the techniques may be realized with a superconducting fault current limiting system (SCFCL) comprising: an input current lead and an output current lead, each current lead coupled to a power distribution/transmission network; a container; a superconductor contained in the container; a shunt disposed outside the container and in parallel with the superconductor; a cryogenic system configured to provide coolant into the container; and at least one sensor disposed near and configured to monitor at least one operating condition of at least one of the input current lead and the output current lead, the superconductor, and the shunt. | 08-29-2013 |
| 20130224938 | PASSIVATION LAYER FOR WORKPIECES FORMED FROM A POLYMER - Methods of forming a passivation layer on a workpiece are disclosed. These methods utilize a SiC forming polymer to form the passivation layer. In addition, while the polymer is being heated to form SiC, a second result, such as annealing of the underlying workpiece, or firing of the metal contacts is achieved. For example, the workpiece may be implanted prior to coating it with the polymer. When the workpiece is heated, SiC is formed and the workpiece is annealed. In another embodiment, a workpiece is coating with the SiC forming polymer and metal pattern is applied to the polymer. The firing of workpiece causes the metal contacts to form and also forms SiC on the workpiece. | 08-29-2013 |
| 20130213296 | METHOD FOR ACHIEVING SUSTAINED ANISOTROPIC CRYSTAL GROWTH ON THE SURFACE OF A MELT - A method of horizontal ribbon growth from a melt includes forming a leading edge of the ribbon using radiative cooling on a surface of the melt, drawing the ribbon in a first direction along the surface of the melt, and removing heat radiated from the melt in a region adjacent the leading edge of the ribbon at a heat removal rate that is greater than a heat flow through the melt into the ribbon. | 08-22-2013 |
| 20130213295 | METHOD FOR ACHIEVING SUSTAINED ANISOTROPIC CRYSTAL GROWTH ON THE SURFACE OF A SILICON MELT - An apparatus for growing a crystalline sheet from a melt includes a cold block assembly. The cold block assembly may include a cold block and a shield surrounding the cold block and being at an elevated temperature with respect to that of the cold block, the shield defining an opening disposed along a surface of the cold block proximate a melt surface that defines a cold area comprising a width along a first direction of the cold block, the cold area operable to provide localized cooling of a region of the melt surface proximate the cold block. The apparatus may further include a crystal puller arranged to draw a crystalline seed in a direction perpendicular to the first direction when the cold block assembly is disposed proximate the melt surface. | 08-22-2013 |
| 20130209198 | TECHNIQUES FOR HANDLING MEDIA ARRAYS - Techniques for handling media arrays are disclosed. The techniques may be realized as a system for handling a plurality of substrates. The system may comprise a plurality of row elements for supporting the plurality of substrates, wherein the plurality of row elements may be operable to change configuration of the substrates from open configuration to a high-density configuration, where a distance between adjacent substrates in the open configuration may be greater than a distance between the adjacent substrates in the high-density configuration. | 08-15-2013 |
| 20130201588 | TECHNIQUE FOR LIMITING TRANSMISSION OF FAULT CURRENT - New techniques for limiting transmission of fault current are disclosed. In one particular exemplary embodiment, the technique may be realized with a new type of apparatus for limiting transmission of fault current. The apparatus may comprise: a first enclosure electrically decoupled from ground, such that the first enclosure is electrically isolated from ground potential; first and second terminals, at least one of which is electrically connected to first one or more current carrying lines; and a first superconducting circuit contained in the first enclosure, the first superconducting circuit electrically connected to the first and second terminals, wherein the first enclosure is maintained at same electrical potential as the first one or more current carrying lines. | 08-08-2013 |
| 20130189579 | Material Engineering for High Performance Li-ion Battery Electrodes - A method of treating an electrode for a battery to enhance its performance is disclosed. By depositing a layer of porous carbon onto the electrode, its charging and discharging characteristics, as well as chemical stability may be improved. The method includes creating a plasma that includes carbon and attracting the plasma toward the electrode, such as by biasing a platen on which the electrode is disposed. In some embodiments, an etching process is also performed on the deposited porous carbon to increase its surface area. The electrode may also be exposed to a hydrophilic treatment to improve its interaction with the electrolyte. In addition, a battery which includes at least one electrode treated according to this process is disclosed. | 07-25-2013 |
| 20130181186 | INTEGRATION OF CURRENT BLOCKING LAYER AND n-GaN CONTACT DOPING BY IMPLANTATION - An improved method of fabricating a semiconductor light emitting diode (LED) is disclosed. The current blocking layer and the contact area for the n-type layer are implanted at the same time. In some embodiments, a dopant, which may be an n-type dopant, is implanted into a portion of the p-type layer to cause that portion to become either u-type or n-type. Simultaneously, the same dopant is implanted into at least a portion of the exposed n-type layer to increase its conductivity. After this implant, the dopant in both portions of the LED may be activated through the use of a single anneal cycle. | 07-18-2013 |
| 20130155569 | High Conductivity Electrostatic Chuck - In accordance with an embodiment of the invention, there is provided an electrostatic chuck comprising a conductive path covering at least a portion of a workpiece-contacting surface of a gas seal ring of the electrostatic chuck, the conductive path comprising at least a portion of an electrical path to ground; and a main field area of a workpiece-contacting surface of the electrostatic chuck comprising a surface resistivity in the range of from about 10 | 06-20-2013 |
| 20130146790 | APPARATUS AND METHOD FOR CHARGE NEUTRALIZATION DURING PROCESSING OF A WORKPIECE - A processing system may include a plasma source for providing a plasma and a workpiece holder arranged to receive ions from the plasma. The processing system may further include a pulsed bias circuit electrically coupled to the plasma source and operable to switch a bias voltage supplied to the plasma source between a high voltage state in which the plasma source is biased positively with respect to ground and a low voltage state in which the plasma source is biased negatively with respect to the ground. | 06-13-2013 |
| 20130143353 | PATTERNED IMPLANT OF A DIELECTRIC LAYER - At least part of a dielectric layer is implanted to form implanted regions. The implanted regions affect the etch rate of the dielectric layer during the formation of the openings through the dielectric layer. Metal contacts may be formed within these openings. The dielectric layer, which may be SiO | 06-06-2013 |
| 20130141818 | MAGNETIC STORAGE DEVICE - A write head for a magnetic storage device includes a writing tip comprising a magnetic material, a write pulse generator configured to generate a write pulse signal comprising a varying voltage bias between the magnetic storage device and the writing tip. The write pulse signal comprising one or more write pulses effective to tunnel electrons from the writing tip to the magnetic storage device. The data stream generator configured to provide a data stream signal to the writing tip where the data stream signal is operative to vary spin polarity in the electrons from a first polarity to a second polarity. | 06-06-2013 |
| 20130130913 | Techniques for Protecting a superconducting (SC) Tape - Techniques for protecting a superconducting (SC) article are disclosed. The techniques may be realized as an apparatus for protecting a superconducting (SC) article. The apparatus may comprise a porous sleeve configured to fit around the superconducting (SC) article. The porous sleeve may be made of non-conductive, dielectric material. | 05-23-2013 |
| 20130112135 | THERMAL LOAD LEVELING USING ANISOTROPIC MATERIALS - An apparatus for growing a silicon crystal substrate comprising a heat source, an anisotropic thermal load leveling component, a crucible, and a cold plate component is disclosed. The anisotropic thermal load leveling component possesses a high thermal conductivity and may be positioned atop the heat source to be operative to even-out temperature and heat flux variations emanating from the heat source. The crucible may be operative to contain molten silicon in which the top surface of the molten silicon may be defined as a growth interface. The crucible may be substantially surrounded by the anisotropic thermal load leveling component. The cold plate component may be positioned above the crucible to be operative with the anisotropic thermal load leveling component and heat source to maintain a uniform heat flux at the growth surface of the molten silicon. | 05-09-2013 |
| 20130108799 | HIGH-THROUGHPUT ION IMPLANTER | 05-02-2013 |
| 20130108401 | WORKPIECE HANDLING SYSTEM AND METHODS OF WORKPIECE HANDLING | 05-02-2013 |
| 20130092529 | PLASMA PROCESSING WITH ENHANCED CHARGE NEUTRALIZATION AND PROCESS CONTROL - Plasma processing with enhanced charge neutralization and process control is disclosed. In accordance with one exemplary embodiment, the plasma processing may be achieved as a method of plasma processing a substrate. The method may comprise providing the substrate proximate a plasma source; applying to the plasma source a first RF power level during a first period and a second RF power level during a second period, the first and second RF power levels being greater than zero RF power level, wherein the second RF power level is greater than the first RF power level; generating with the plasma source a first plasma during the first period and a second plasma during the second period; and applying to the substrate a first bias voltage during the first period and a second bias voltage during the second period, wherein the first voltage has more negative potential than the second voltage. | 04-18-2013 |
| 20130092413 | Current Lead with a Configuration to Reduce Heat Load Transfer in an Alternating Electrical Current Environment - A current lead with a configuration to reduce heat load transfer in an alternating electrical current (AC) environment is disclosed. The current lead may comprise a conductive material having a configuration for reducing heat load transfer across the current lead when an alternating electrical current (AC) is applied to the current lead. A temperature gradient a may be exhibited along a length of the current lead. | 04-18-2013 |
| 20130090242 | Techniques for Sub-Cooling in a Superconducting System - Techniques for sub-cooling in a superconducting (SC) system is disclosed. The techniques may be realized as a method and superconducting (SC) system comprising at least one insulated enclosure configured to enclose at least a first fluid or gas and a second fluid or gas, and at least one superconducting circuit within the at least one insulated enclosure. The superconducting (SC) system may be sub-cooled using at least the first fluid or gas. | 04-11-2013 |
| 20130089403 | METHOD AND APPARATUS FOR HOLDING A PLURALITY OF SUBSTRATES FOR PROCESSING - A substrate carrier includes a carrier plate, a cover plate and a plurality of substrate support slots. The carrier plate has recesses for receiving substrates. A sidewall of each recess includes protrusions for engaging the OD of a substrate. The cover plate is rotatable-and has a cam on an undersurface. The cam is enagageable with a lateral slot in each of a plurality of substrate supports of the carrier plate. Rotating the cover plate causes the cam to move the substrate supports, one by one, so a substrate engaging end of the substrate support moves away from an associated substrate recess. A substrate is loaded into the recess, whereupon the cover plate is rotated further so the cam disengages from the lateral slot. The substrate supports are biased to engage the OD of the substrate to lock the substrate within the recess. Other embodiments are described and claimed. | 04-11-2013 |
| 20130089395 | METHOD AND APPARATUS FOR REMOVING A VERTICALLY-ORIENTED SUBSTRATE FROM A CASSETTE - A system and method are disclosed for removing vertically oriented substrates from a cassette. A lifter includes a lifter notch and a stabilizer notch for holding a substrate. The lifter notch engages and lifts the substrate along the substrate ID, while the stabilizer notch captures the substrate OD to prevent lateral movement of the substrate during lifting. In use, the cassette is tilted to bias all substrates to one side and ensure consistent spacing. The lifter moves up into the cassette until the notches are adjacent, but beneath, the ID and OD of a substrate. The lifter is moved laterally to position the notches directly below the ID and OD. Upward movement of the lifter causes the lifter notch to lift the substrate along the ID. The lifter continues upward with the substrate until the substrate clears the top of the cassette. Other embodiments are described and claimed. | 04-11-2013 |
| 20130088030 | METHOD AND APPARATUS FOR MANIPULATING A SUBSTRATE - A device is disclosed for manipulating a substrate having an inside diameter (ID). The device includes a handle, a trigger that slides within the handle, an alignment shaft and a plurality of substrate supports having distal ends. A plurality of substrate support actuators are connected to the trigger. The trigger can move the plurality of substrate supports between a substrate engaging position and a substrate releasing position through selective engagement of the plurality of substrate supports by the plurality of substrate support actuators. In the substrate engaging position the distal ends of the substrate supports move radially outward to engage the ID of the substrate, enabling the device to hold the substrate without touching the substrate faces. Other embodiments are described and claimed. | 04-11-2013 |
| 20130088028 | METHOD AND APPARATUS FOR LIFTING A HORIZONTALLY-ORIENTED SUBSTRATE FROM A CASSETTE - A system and method are disclosed for removing horizontally oriented substrates from a cassette. A substrate lifter has an engagement end for engaging a substrate and an adjustment end for engaging an adjustment assembly. The engagement end includes a recess having first and second arcuate sidewalls configured to engage an OD of the substrate, and a circular protrusion positioned between the first and second arcuate sidewalls. The circular protrusion allows lateral movement of the substrate up to a predetermined amount and prevents lateral movement of the substrate in excess of the predetermined amount. Other embodiments are described and claimed. | 04-11-2013 |
| 20130087189 | METHOD OF CREATING TWO DIMENSIONAL DOPING PATTERNS IN SOLAR CELLS - An improved method of fabricating an interdigitated back contact (IBC) solar cell is disclosed. A first mask is used to perform a patterned ion implantation of n-type dopant to create the back surface field. A second mask is then used to create the p-type emitter on the same surface. The second mask may be aligned to the n-type implant, and may be used in a plurality of orientations to create the desired p-type emitter. In some embodiments, a p-type blanket implant is performed as well. In some embodiments, a doping gradient is created. | 04-11-2013 |
| 20130084694 | JUNCTION AVOIDANCE ON EDGES OF WORKPIECES - A method of implanting ions into a workpiece without the formation of junctions, which impact the performance of the workpiece, is disclosed. To counteract the effect of dopant being implanted into the edge of the workpiece, components made of material having an opposite conductivity are placed near the workpiece. As ions from the beam strike these components, ions from the material are sputtered. These ions have the opposite conductivity as the implanted ions, and therefore inhibit the formation of junctions. | 04-04-2013 |
| 20130082599 | TRANSFORMER-COUPLED RF SOURCE FOR PLASMA PROCESSING TOOL - A RF source and method are disclosed which inductively create a plasma within an enclosure without an electric field or with a significantly decreased creation of an electric field. A ferrite material with an insulated wire wrapped around its body is used to efficiently channel the magnetic field through the legs of the ferrite. This magnetic field, which flows between the legs of the ferrite can then be used to create and maintain a plasma. In one embodiment, these legs rest on a dielectric window, such that the magnetic field passes into the chamber. In another embodiment, the legs of the ferrite extend into the processing chamber, thereby further extending the magnetic field into the chamber. This ferrite can be used in conjunction with a PLAD chamber, or an ion source for a traditional beam line ion implantation system. | 04-04-2013 |
| 20130075253 | TITANIUM DIBORIDE COATING FOR PLASMA PROCESSING APPARATUS - An improved plasma processing chamber is disclosed, wherein some or all of the components which are exposed to the plasma are made of, or coated with, titanium diborane. Titanium diborane has a hardness in excess of 9 mhos, making it less susceptible to sputtering. In addition, titanium diborane is resistant to fluoride and chlorine ions. Finally, titanium diborane is electrically conductive, and therefore the plasma remains more uniform over time, as charge does not build on the surfaces of the titanium diborane components. This results in improved workpiece processing, with less contaminants and greater uniformity. In other embodiments, titanium diborane may be used to line components within a beam line implanter. | 03-28-2013 |
| 20130070384 | High Surface Resistivity Electrostatic Chuck - In accordance with an embodiment of the invention, there is provided an electrostatic chuck. The electrostatic chuck comprises an electrode, and a surface layer activated by a voltage in the electrode to form an electric charge to electrostatically clamp a substrate to the electrostatic chuck, the surface layer including a charge control layer comprising a surface resistivity of greater than about 10 | 03-21-2013 |
| 20130064989 | PLASMA PROCESSING OF WORKPIECES TO FORM A COATING - A surface of an insulating workpiece is implanted to form either hydrophobic or hydrophilic implanted regions. A conductive coating is deposited on the workpiece. The coating may be a polymer in one instance. This coating preferentially forms either on the implanted regions if these implanted regions are hydrophilic or on the non-implanted regions if the implanted regions are hydrophobic. | 03-14-2013 |
| 20130062309 | METHOD AND SYSTEM FOR MODIFYING RESIST OPENINGS USING MULTIPLE ANGLED IONS - A method of reducing roughness in an opening in a surface of a resist material disposed on a substrate, comprises generating a plasma having a plasma sheath and ions therein. The method also includes modifying a shape of a boundary defined between the plasma and the plasma sheath with a plasma sheath modifier so that a portion of the boundary facing the resist material is not parallel to a plane defined by the surface of the substrate. The method also includes providing a first exposure of ions while the substrate is in a first position, the first exposure comprising ions accelerated across the boundary having the modified shape toward the resist material over an angular range with respect to the surface of the substrate. | 03-14-2013 |
| 20130052811 | PLASMA UNIFORMITY CONTROL USING BIASED ARRAY - A technique for processing a workpiece is disclosed. In accordance with one exemplary embodiment, the technique may be realized as a method for processing a substrate, where the method may comprise: providing the workpiece in the chamber; providing a plurality of electrodes between a wall of the chamber and the workpiece; generating a plasma containing ions between the plurality of electrodes and the workpiece, ion density in an inner portion of the plasma being greater than the ion density in an outer portion of the plasma portion, the outer portion being between the inner portion and the wall of the chamber; and providing a bias voltage to the plurality of electrodes and dispersing at least a portion of the ions in the inner portion until the ion density in the inner portion is substantially equal to the ion density in the periphery plasma portion. | 02-28-2013 |
| 20130052810 | ENGINEERING OF POROUS COATINGS FORMED BY ION-ASSISTED DIRECT DEPOSITION - In one embodiment, a method of producing a porous semiconductor film on a workpiece includes generating semiconductor precursor ions that comprise one or more of: germanium precursor ions and silicon precursor ions in a plasma of a plasma chamber, in which the semiconductor precursor ions are operative to form a porous film on the workpiece. The method further includes directing the semiconductor precursor ions to the workpiece over a range of angles. | 02-28-2013 |
| 20130045557 | DEPOSITION OF POROUS FILMS FOR THERMOELECTRIC APPLICATIONS - An improved method of creating thermoelectric materials which have high electrical conductivity and low thermal conductivity is disclosed. In one embodiment, the thermoelectric material is made by depositing a porous film onto a substrate, introducing a dopant into the porous film and annealing the porous film to activate the dopant. In other embodiments, additional amounts of dopant may be introduced via subsequent ion implantations of dopant into the deposited porous film. | 02-21-2013 |
| 20130045339 | TECHNIQUES FOR DIAMOND NUCLEATION CONTROL FOR THIN FILM PROCESSING - Techniques for diamond nucleation control for thin film processing are disclosed. In one particular embodiment, the techniques may be realized as a method for generating a plasma having a plurality of ions; depositing a plurality of diamond nucleation centers on a substrate with the ions in the plasma using an extraction plate having at least one gap, wherein the plasma ions pass through the at least one gap in the extraction plate to generate a focused ion beam to deposit the plurality of diamond nucleation centers; and controlling the growth of a continuous diamond film from the diamond nucleation centers on the substrate by controlling at least one of a temperature around the substrate, a temperature of the plasma, a pressure around the substrate, and a concentration of the ions in the plasma. | 02-21-2013 |
| 20130037052 | PLATEN CLEANING METHOD - A method for cleaning a workpiece support that includes using a workpiece that has been coated on its bottom surface with a suitable material is disclosed. This specially coated workpiece is placed on the support, and some time later, it is removed, taking with it particles from the support. In certain embodiments, the workpiece undergoes an ion implantation process to increase its temperature, and to increase the tackiness of the coating on the bottom surface. The material used to coat the bottom can be of variable types, including photoresists, oxides and deposited glasses. | 02-14-2013 |
| 20130035897 | ION BEAM INCIDENT ANGLE DETECTION ASSEMBLY AND METHOD - In an ion implanter, a detector assembly is employed to monitor the ion beam current and incidence angle at the location of the work piece or wafer. The detector assembly includes a plurality of pairs of current sensors and a blocker panel. The blocker panel is coupled to the detector array to move together with the detector array. The blocker panel is also disposed a distance away from the sensors to allow certain of the beamlets that comprise the ion beam to reach the sensors. Each sensor in a pair of sensors measures the beam current incident thereon and the incident angle is calculated using these measurements. In this manner, beam current and incidence angle variations may be measured at the work piece site and be accommodated for, thereby avoiding undesirable beam current profiles. | 02-07-2013 |
| 20130020940 | CURRENT LIMITER FOR HIGH VOLTAGE POWER SUPPLY USED WITH ION IMPLANTATION SYSTEM - Disclosed is a surge protection system for use with an ion source assembly. The system comprises a high voltage power source coupled in series with a thermionic diode and an ion source assembly. The high voltage power supply is enclosed in the pressure tank and drives the ion source assembly. The thermionic diode is comprised of an insulating tube disposed between the ion source assembly enclosure and the output of the high voltage power supply and makes use of existing ion source assembly components to limit damage to the power supply during arc failures of the ion source assembly. | 01-24-2013 |
| 20130020580 | HETEROEPITAXIAL GROWTH USING ION IMPLANTATION - In one embodiment, a method of growing a heteroepitaxial layer comprises providing a patterned substrate containing patterned features having sidewalls. The method also includes directing ions toward the sidewalls in an exposure, wherein altered sidewall regions are formed, and depositing the heteroepitaxial layer under a set of deposition conditions effective to preferentially promote epitaxial growth on the sidewalls in comparison to other surfaces of the patterned features. | 01-24-2013 |
| 20130015528 | METHOD AND SYSTEM FOR FORMING LOW CONTACT RESISTANCE DEVICEAANM Waite; AndrewAACI BeverlyAAST MAAACO USAAGP Waite; Andrew Beverly MA USAANM Erokhin; YuriAACI GeorgetownAAST MAAACO USAAGP Erokhin; Yuri Georgetown MA USAANM Todorov; StanislavAACI TopsfieldAAST MAAACO USAAGP Todorov; Stanislav Topsfield MA US - A method of treating a CMOS device. The method may include providing a first stress liner on a transistor of a first dopant type in the CMOS device. The method may further include exposing the CMOS device to first ions in a first exposure, the first ions configured to reduce contact resistance in a source/drain region of a transistor of a second dopant type. | 01-17-2013 |
| 20130015053 | INDUCTIVELY COUPLED RF PLASMA SOURCE WITH MAGNETIC CONFINEMENT AND FARADAY SHIELDINGAANM Benveniste; Victor M.AACI LyleAAST WAAACO USAAGP Benveniste; Victor M. Lyle WA USAANM Rdovanov; SvetlanaAACI BrooklineAAST MAAACO USAAGP Rdovanov; Svetlana Brookline MA USAANM Biloiu; CostelAACI RockportAAST MAAACO USAAGP Biloiu; Costel Rockport MA US - Disclosed is an inductively coupled RF plasma source that provides both magnetic confinement to reduce plasma losses and Faraday shielding to suppress parasitic capacitive components. The inductively coupled RF plasma system comprises an RF power source, plasma chamber, an array of permanent magnets, and an antenna array. The plasma chamber is comprised of walls and a dielectric window having an inner and outer surface wherein the inner surface forms a wall of the plasma chamber. The array of parallel conductive permanent magnets is electrically interconnected and embedded within the dielectric window walls proximate to the inner surface and coupled to ground on one end. The permanent magnet array elements are alternately magnetized toward and away from plasma in the plasma chamber to form a multi-cusp magnetic field. The antenna array may be comprised of parallel tubes through which an RF current is circulated. The antenna array is oriented perpendicular to the permanent magnet array. | 01-17-2013 |
| 20130008494 | USE OF ION BEAM TAILS TO MANUFACTURE A WORKPIECE - One method of implanting a workpiece involves implanting the workiece with an n-type dopant in a first region with center and a periphery. The workpiece also is implanted with a p-type dopant in a second region complementary to the first region. This second region also has a center and a periphery. The periphery of the first region and the periphery of the second region at least partially overlap. A dose at the periphery of the first region or second region is less than a dose at the center of the first region or second region. The region of overlap may function as a junction where charge carriers cannot pass. | 01-10-2013 |
| 20130001698 | METHOD TO MODIFY THE SHAPE OF A CAVITY USING ANGLED IMPLANTATION - A method of modifying a shape of a cavity in a substrate. The method includes forming one or more cavities on a surface of the substrate between adjacent relief structures. The method also includes directing ions toward the substrate at a non-normal angle of incidence, wherein the ions strike an upper portion of a cavity sidewall, and wherein the ions do not strike a lower portion of the cavity sidewall. The method further includes etching the one or more cavities wherein the upper portion of a cavity sidewall etches more slowly than the lower portion of the sidewall cavity. | 01-03-2013 |
| 20130001440 | SYSTEM AND METHOD FOR ION IMPLANTATION WITH DUAL PURPOSE MASK - A system for implanting a substrate. The system includes a substrate holder disposed within a process chamber of the system and coupled to ground. The system also includes an electrode disposed within the process chamber and coupled to a power source, the power source configured to supply voltage to the electrode as an unbalanced voltage pulse train, wherein a negative peak voltage during a negative voltage pulse period of the unbalanced voltage pulse train is higher than a positive peak voltage during a positive voltage pulse period of the unbalanced pulse train. The system further includes a movable mask, wherein the movable mask is configured to move between a first position proximate the substrate holder, and a second position proximate the driven electrode. | 01-03-2013 |
| 20130001414 | SYSTEM AND METHOD FOR PRODUCING A MASS ANALYZED ION BEAM FOR HIGH THROUGHPUT OPERATION - A system for producing a mass analyzed ion beam for implanting into a workpiece, includes an extraction plate having a set of apertures having a longitudinal axis of the aperture. The set of apertures are configured to extract ions from an ion source to form a plurality of beamlets. The system also includes an analyzing magnet region configured to provide a magnetic field to deflect ions in the beamlets in a first direction that is generally perpendicular to the longitudinal axis of the apertures. The system further includes a mass analysis plate having a set of apertures configured to transmit first ion species having a first mass/charge ratio and to block second ion species having a second mass/charge ratio and a workpiece holder configured to move with respect to the mass analysis plate along the first direction. | 01-03-2013 |
| 20120328771 | CLOSED LOOP PROCESS CONTROL OF PLASMA PROCESSED MATERIALS - A plasma processing apparatus and method are disclosed which improve the repeatability of various plasma processes. The actual implanted dose is a function of implant conditions, as well as various other parameters. This method used knowledge of current implant conditions, as well as information about historical data to improve repeatability. In one embodiment, information about plasma composition and dose per pulse is used to control one or more operating parameters in the plasma chamber. In another embodiment, this information is combined with historical data to control one or more operating parameters in the plasma chamber. | 12-27-2012 |
| 20120322199 | PATTERNED DOPING FOR POLYSILICON EMITTER SOLAR CELLS - An improved method of manufacturing a polysilicon solar cell is disclosed. To create the polysilicon layer, which has p-type and n-type regions, the layer is grown in the presence of one type of dopant. After the doped polysilicon layer has been created, ions of the opposite dopant conductivity are selectively implanted into portions of the polysilicon layer. This selective implant may be performed using a shadow mask. | 12-20-2012 |
| 20120322192 | METHOD OF DEFECT REDUCTION IN ION IMPLANTED SOLAR CELL STRUCTURES - An improved solar cell is disclosed. To create the internal p-n junction, one surface of the substrate is implanted with ions. After the implantation, the substrate is thermally treated. The thermal process distributes the dopant throughout the substrate, while repairing crystal damage caused by implantation. After the thermal process, residual crystal damage may remain, which adversely impacts solar cell efficiency. In order to further reduce the residual damage, the uppermost portion of the surface is then removed, thereby eliminating that portion of the substrate where most of the defects reside. The lower defect concentration reduces recombination and improves efficiency of the solar cell. | 12-20-2012 |
| 20120316070 | Superconducting Fault Current Limiter Monitoring - A superconducting fault current limiter (SCFCL) includes a cryogenic tank defining an interior volume, a superconductor disposed in the interior volume, and a voltage detector configured to detect a voltage drop across the superconductor and provide a voltage signal representative of the voltage drop. This voltage detector enables real time monitoring of a condition of the superconductor during steady state operation of the SCFCL. If the voltage drop exceeds an acceptable voltage drop, corrective action such as maintenance, repair, and/or replacement may be taken. | 12-13-2012 |
| 20120316069 | SUPOERCONDUCTING FAULT CURRENT LIMITER RECOVERY SYSTEM - A superconducting fault current limiter recovery system includes a superconducting fault current limiter, a shunt electrically coupled in parallel with the superconducting fault current limiter, and a bypass path also electrically coupled in parallel with the superconducting fault current limiter. The bypass path enables a load current to flow through the bypass path during a bypass condition. Thus, load current may be quickly reestablished to serve loads after a fault condition via the bypass path while a superconductor of the superconductor fault current limiter has time to return to a superconducting state after the fault condition. | 12-13-2012 |
| 20120309180 | METHOD OF FORMING A RETROGRADE MATERIAL PROFILE USING ION IMPLANTATION - A method of forming a retrograde material profile in a substrate includes forming a surface peak profile on the substrate. Ions are then implanted into the substrate to form a retrograde profile from the surface peak profile, at least one of an ion implantation dose and an ion implantation energy of the implanted ions being chosen so that the retrograde profile has a peak concentration that is positioned at a desired distance from the surface of the substrate. | 12-06-2012 |
| 20120295444 | TECHNIQUES FOR FORMING 3D STRUCTURES - A technique for forming 3D structures is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for forming 3D structures. The method may comprise providing a substrate comprising at least two vertically extending fins that are spaced apart from one another to define a trench; depositing a dielectric material in the trench between the at least two vertically extending fins; providing an etch stop layer within the dielectric material, the etch stop layer having a first side and a second opposite side; removing the dielectric material near the first side of the etch stop layer. | 11-22-2012 |
| 20120295430 | METHOD FOR PROCESSING A SUBSTRATE HAVING A NON-PLANAR SUBSTRATE SURFACE - A technique for conformal processing of a substrate having a non-planar surface is disclosed. The technique includes several stages. In a first stage, some surfaces of the substrate are effectively processed. During a second stage, these surfaces are treated to limit or eliminate further processing of these surfaces. During a third stage, other surfaces of the substrate are processed. In some applications, the surfaces that are perpendicular, or substantially perpendicular to the flow of particles are processed in the first and second stages, while other surfaces are processed in the third stage. In some embodiments, the second stage includes the deposition of a film on the substrate. | 11-22-2012 |
| 20120295398 | ION IMPLANT MODIFICATION OF RESISTIVE RANDOM ACCESS MEMORY DEVICES - An improved method of fabricating a resistive memory device is disclosed. A resistive memory includes a bottom electrode, a top electrode and a resistive material layer interposed therebetween. Interfaces are formed between the resistive material layer and the respective top and bottom electrodes. Ions are implanted in the device to change the characteristics of one or both of these interfaces, thereby improving the performance of the memory device. These ions may be implanted after the three layers are fabricated, during the fabrication of these layers, or at both times. | 11-22-2012 |
| 20120293070 | PLASMA ATTENUATION FOR UNIFORMITY CONTROL - A plasma processing apparatus and method are disclosed which create a uniform plasma within an enclosure. In one embodiment, a conductive or ferrite material is used to influence a section of the antenna, where a section is made up of portions of multiple coiled segments. In another embodiment, a ferrite material is used to influence a portion of the antenna. In another embodiment, plasma uniformity is improved by modifying the internal shape and volume of the enclosure. | 11-22-2012 |
| 20120289031 | COMPOUND SEMICONDUCTOR GROWTH USING ION IMPLANTATION - A workpiece is implanted to affect growth of a compound semiconductor, such as GaN. Implanted regions of a workpiece increase, reduce, or prevent growth of this compound semiconductor. Combinations of implants may be performed to cause increased growth in certain regions of the workpiece, such as between regions where growth is reduced. Growth also may be reduced or prevented at the periphery of the workpiece. | 11-15-2012 |
| 20120289030 | ION-ASSISTED DIRECT GROWTH OF POROUS MATERIALS - Methods of creating porous materials, such as silicon, are described. In some embodiments, plasma sheath modification is used to create ion beams of various incidence angles. These ion beams may, in some cases, form a focused ion beam. The wide range of incidence angles allows the material to be deposited amorphously. The porosity and pore size can be varied by changing various process parameters. In other embodiments, porous oxides can be created by adding oxygen to previously created layers of porous material. | 11-15-2012 |
| 20120288637 | METHODS OF AFFECTING MATERIAL PROPERTIES AND APPLICATIONS THEREFOR - Methods of affecting a material's properties through the implantation of ions, such as by using a plasma processing apparatus with a plasma sheath modifier. In this way, properties such as resistance to chemicals, adhesiveness, hydrophobicity, and hydrophilicity, may be affected. These methods can be applied to a variety of technologies. In some cases, ion implantation is used in the manufacture of printer heads to reduce clogging by increasing the materials hydrophobicity. In other embodiments, MEMS and NEMS devices are produced using ion implantation to change the properties of fluid channels and other structures. In addition, ion implantation can be used to affect a material's resistance to chemicals, such as acids. | 11-15-2012 |
| 20120286285 | METHOD OF IMPLANTING A WORKPIECE TO IMPROVE GROWTH OF A COMPOUND SEMICONDUCTOR - A workpiece is implanted to improve growth of a compound semiconductor, such as GaN. This workpiece may be implanted such that the workpiece has a dose at a center different from a dose at a periphery. This workpiece also may be implanted one or more times to form a pattern of lines, which may be a grid, a series of circles, or other shapes. The distance between certain pairs of lines may be different across the workpiece. | 11-15-2012 |
| 20120280442 | MEDIA CARRIER - A media carrier, adapted to hold a plurality of pieces of magnetic media, is disclosed. This media carrier can be placed on the workpiece support, or platen, allowing the magnetic media to be processed. In some embodiments, the media carrier is designed such that only one side of the magnetic media is exposed, requiring a robot or other equipment to invert each piece of media in the carrier to process the second side. In other embodiments, the media carrier is designed such that both sides of the magnetic media are exposed. In this scenario, the media carrier is inverted on the platen to allow processing of the second side. | 11-08-2012 |
| 20120280140 | METHOD AND SYSTEM FOR CONTROLLING CRITICAL DIMENSION AND ROUGHNESS IN RESIST FEATURES - A method of treating a photoresist relief feature having an initial line roughness and an initial critical dimension. The method may include directing ions toward the photoresist in a first exposure at a first angular range and first dose rate and a that is configured to reduce the initial line roughness to a second line roughness. The method may also include directing ions toward the photoresist relief feature in a second exposure at a second ion dose rate greater than the first dose rate, wherein the second ion dose rate is configured to swell the photoresist relief feature. | 11-08-2012 |
| 20120276684 | PATTERNED ASSEMBLY FOR MANUFACTURING A SOLAR CELL AND A METHOD THEREOF - Apparatuses and methods for manufacturing a solar cell are disclosed. In a particular embodiment, the solar cell may be manufactured by disposing a solar cell in a chamber having a particle source; disposing a patterned assembly comprising an aperture and an assembly segment between the particle source and the solar cell; and selectively implanting first type dopants traveling through the aperture into a first region of the solar cell while minimizing introduction of the first type dopants into a region outside of the first region. | 11-01-2012 |
| 20120276658 | METHOD OF ETCHING A WORKPIECE - A workpiece is implanted to a first depth to form a first amorphized region. This amorphized region is then etched to the first depth. After etching, the workpiece is implanted to a second depth to form a second amorphized region below a location of the first amorphized region. The second amorphized region is then etched to the second depth. The implant and etch steps may be repeated until structure is formed to the desired depth. The workpiece may be, for example, a compound semiconductor, such as GaN, a magnetic material, silicon, or other materials. | 11-01-2012 |
| 20120275067 | SUPERCONDUCTING FAULT CURRENT LIMITER - A connector assembly of a superconducting fault current limiter includes a first superconducting tape element, an electrical connector electrically coupled to the first superconducting element at a first region of the electrical conductor, and a second superconducting tape element electrically coupled to the electrical connector in a second region of the electrical connector. The electrical connector comprises a unitary structure. The first superconducting tape element, the electrical connector, and the second superconducting tape element comprise may comprise a layer. | 11-01-2012 |
| 20120264613 | Fault Current Limited System with Current Splitting Device - A fault current limiter system including a fault current limiter and a variable shunt current splitting device. The current splitting device includes first and second conductive windings, wherein the first conductive winding is connected in parallel with the fault current limiter and is configured to carry current in a first direction. The second conductive winding is electrically connected in series with the fault current limiter and is configured to carry current in a second direction opposite to the first direction so that the reactance of the first winding is negated by the reactance of the second winding during steady state operation of the fault current limiter system. Thus, a first portion of a steady state current is conveyed through the fault current limiter and a second portion of the current is conveyed through the current splitting device. The steady state current load, on the fault current limiter is thereby reduced. | 10-18-2012 |
| 20120263887 | TECHNIQUE AND APPARATUS FOR ION-ASSISTED ATOMIC LAYER DEPOSITION - An apparatus for depositing a coating may comprise a first processing chamber configured to deposit a first reactant as a reactant layer on a substrate during a first time period. A second processing chamber may be configured to direct ions incident on the substrate at a second time and configured to deposit a second reactant on the substrate during a second time period, wherein the second reactant is configured to react with the reactant layer. | 10-18-2012 |
| 20120258583 | METHOD FOR EPITAXIAL LAYER OVERGROWTH - Oxygen, silicon, germanium, carbon, or nitrogen is selectively implanted into a workpiece. The workpiece is annealed to incorporate the ions into the workpiece. A compound semiconductor is then formed on the workpiece. For example, gallium nitride may be formed on a silicon, silicon carbide, or sapphire workpiece. The width of the implanted regions can be configured to compensate for any shrinkage during annealing. | 10-11-2012 |
| 20120257313 | Superconducting Fault Current Limiter - A superconducting fault current limiter (SCFCL) includes a cryogenic tank defining an interior volume, a superconductor disposed in the interior volume, and a refrigeration system configured to adjust a temperature of the superconductor in response to a condition during a steady state operation of the SCFCL. A method of operating a SCFCL includes cooling a superconductor disposed within an interior volume of a cryogenic tank to a temperature less than a critical temperature of the superconductor, and adjusting the temperature of the superconductor in response to a condition during a steady state operation of the SCFCL. | 10-11-2012 |
| 20120256614 | TECHNIQUE FOR LIMITING FAULT CURRENT TRANSMISSION - A technique for limiting fault current transmission is disclosed. In one particular exemplary embodiment, the technique may be realized with a fault current limiter comprising a core having at least first easy axis and a hard axis; and a first coil wound around the core, the first coil configured to carry current. In some embodiment, the easy axis of the core may be aligned with H fields generated by the current transmitted through the first coil. | 10-11-2012 |
