TSMC Solid State Lighting Ltd. Patent applications |
Patent application number | Title | Published |
20150108424 | Method to Remove Sapphire Substrate - A Light-Emitting Diode (LED) is formed on a sapphire substrate that is removed from the LED by grinding and then etching the sapphire substrate. The sapphire substrate is ground first to a first specified thickness using a single abrasive or multiple abrasives. The remaining sapphire substrate is removed by dry etching or wet etching. | 04-23-2015 |
20140264268 | METHOD AND APPARATUS FOR FABRICATING PHOSPHOR-COATED LED DIES - The present disclosure involves lighting apparatus. The lighting apparatus includes a first doped semiconductor layer. A light-emitting layer is disposed over the first doped semiconductor layer. A second doped semiconductor layer is disposed over the light-emitting layer. The second doped semiconductor layer has a different type of conductivity than the first doped semiconductor layer. A photo-conversion layer is disposed over the second doped semiconductor layer and over side surfaces of the first and second doped semiconductor layers and the light-emitting layer. The photo-conversion layer has an angular profile. | 09-18-2014 |
20140252380 | Shadow Mask Assembly - A shadow mask assembly includes a securing assembly configured to hold a substrate that is configured to hold a plurality of dies. The securing assembly includes a number of guide pins and a shadow mask comprising holes for the guide pins, said holes allowing the guide pins freedom of motion in one direction. The securing assembly includes a number of embedded magnets configured to secure the shadow mask to the securing assembly. | 09-11-2014 |
20140231836 | STRUCTURE AND METHOD FOR LED WITH PHOSPHOR COATING - The present disclosure provides a light emitting diode (LED) apparatus. The LED apparatus includes an LED emitter having a top surface; and a phosphor feature disposed on the LED emitter. The phosphor feature includes a first phosphor film disposed on the top surface of the LED emitter and having a first dimension defined in a direction parallel to the top surface of the LED emitter; a second phosphor film disposed on the first phosphor film and having a second dimension defined in the direction; and the second dimension is substantially less than the first dimension. | 08-21-2014 |
20140209930 | Multi-Vertical LED Packaging Structure - The present disclosure involves a light-emitting diode (LED) packaging structure. The LED packaging structure includes a submount having a substrate and a plurality of bond pads on the substrate. The LED packaging structure includes a plurality of p-type LEDs bonded to the substrate through a first subset of the bond pads. The LED packaging structure includes a plurality of n-type LEDs bonded to the substrate through a second subset of the bond pads. Some of the bond pads belong to both the first subset and the second subset of the bond pads. The p-type LEDs and the n-type LEDs are arranged as alternating pairs. The LED packaging structure includes a plurality of transparent and conductive components each disposed over and electrically interconnecting one of the pairs of the p-type and n-type LEDs. The LED packaging structure includes one or more lenses disposed over the n-type LEDs and the p-type LEDs. | 07-31-2014 |
20140184081 | Color Temperature Adjustment for LED Lamps Using Switches - A light-emitting diode (LED) lamp includes a number of different color LEDs that can be turned on and off in different combinations using an external switch operable by a user. A user or a controller can adjust the color temperature of light output by the lamp. The color temperature change may be a user preference and can compensate for decreased phosphor efficiency over time. | 07-03-2014 |
20140159079 | COST-EFFECTIVE LED LIGHTING INSTRUMENT WITH GOOD LIGHT OUTPUT UNIFORMITY - The present disclosure involves a lighting instrument. The lighting instrument includes a board or substrate, for example, a printed circuit board. The lighting instrument also includes a plurality of light-emitting devices disposed on the substrate. The light-emitting devices may be light-emitting diode (LED) dies. The LED dies belong to a plurality of different bins. The bins are categorized based on the light output performance of the LED dies. In some embodiments, the LED dies may be binned based on the wavelength or radiant flux of the light output. The LED dies are distributed on the substrate according to a predefined pattern based on their bins. In some embodiments, the LED dies are bin-mixed in an interleaving manner. | 06-12-2014 |
20140151740 | Micro-Structure Phosphor Coating - An optical emitter includes micro-structure phosphor coating on a light-emitting diode die mounted on a package substrate. The micro-structures are transferred onto a micro-structure phosphor coating precursor by patterning and curing the precursor or by curing the precursor through a mold. The micro-structures are half spheroids, three-sided pyramids, or six-sided pyramids. | 06-05-2014 |
20140151725 | Method and Apparatus for Fabricating Phosphor-Coated LED Dies - The present disclosure involves a method of packaging a light-emitting diode (LED). According to the method, a group of metal pads and a group of LEDs are provided. The group of LEDs is attached to the group of metal pads, for example through a bonding process. After the LEDs are attached to the metal pads, each LED is spaced apart from adjacent LEDs. Also according to the method, a phosphor film is coated around the group of LEDs collectively. The phosphor film is coated on top and side surfaces of each LED and between adjacent LEDs. A dicing process is then performed to slice through portions of the phosphor film located between adjacent LEDs. The dicing process divides the group of LEDs into a plurality of individual phosphor-coated LEDs. | 06-05-2014 |
20140112009 | LED Module and Method of Bonding Thereof - The present disclosure provides a method including providing a light-emitting diode (LED) device (e.g., a LED element and PCB) and a heat sink. The LED device is bonded to the heat sink by applying an ultrasonic energy. In an embodiment, the bonding may form a bond comprising copper and aluminum. The PCB may be a metal core PCB (MC-PCB). | 04-24-2014 |
20140103372 | METHOD AND APPARATUS FOR PACKAGING PHOSPHOR-COATED LEDS - The present disclosure involves a method of packaging light-emitting diodes (LEDs). According to the method, a plurality of LEDs is provided over an adhesive tape. The adhesive tape is disposed on a substrate. In some embodiments, the substrate may be a glass substrate, a silicon substrate, a ceramic substrate, and a gallium nitride substrate. A phosphor layer is coated over the plurality of LEDs. The phosphor layer is then cured. The tape and the substrate are removed after the curing of the phosphor layer. A replacement tape is then attached to the plurality of LEDs. A dicing process is then performed to the plurality of LEDs after the substrate has been removed. The removed substrate may then be reused for a future LED packaging process. | 04-17-2014 |
20140093990 | Light Emitting Diode Optical Emitter with Transparent Electrical Connectors - An optical emitter includes a Light-Emitting Diode (LED) on a package wafer, transparent insulators, and one or more transparent electrical connectors between the LED die and one or more contact pads on the packaging wafer. The transparent insulators are deposited on the package wafer with LED dies attached using a lithography or a screen printing method. The transparent electrical connectors are deposited using physical vapor deposition, chemical vapor deposition, spin coating, spray coating, or screen printing and may be patterned using a lithography process and etching. | 04-03-2014 |
20140091329 | LED Emitter with Improved White Color Appearance - The present disclosure involves a lighting instrument. The lighting instrument includes a board or substrate, for example, a printed circuit board substrate. The lighting instrument includes a plurality of light-emitting diode (LED) dies disposed on the substrate. The LED dies are spaced apart from one another. Each LED die is covered with a respective individual phosphor coating that is coated around the LED die conformally. Due at least in part to the individual phosphor coatings, the LED dies and the lighting instrument may assume a substantially white appearance in an off state. The lighting instrument also includes an encapsulation structure disposed over the substrate. The encapsulation structure may be a diffuser cap that encapsulates the light-emitting dies within. A diffuser gel fills the space between the encapsulation structure and the LED dies. | 04-03-2014 |
20140084244 | Wafer Level Photonic Device Die Structure and Method of Making the Same - A vertical Light Emitting Diode (LED) device includes an epi structure with a first-type-doped portion, a second-type-doped portion, and a quantum well structure between the first-type-doped and second-type-doped portions and a carrier structure with a plurality of conductive contact pads in electrical contact with the epi structure and a plurality of bonding pads on a side of the carrier structure distal the epi structure, in which the conductive contact pads are in electrical communication with the bonding pads using at least one of vias and a Redistribution Layer (RDL). The vertical LED device further includes a first insulating film on a side of the carrier structure proximal the epi structure and a second insulating film on a side of the carrier structure distal the epi structure. | 03-27-2014 |
20140078757 | High Voltage LED with Improved Heat Dissipation and Light Extraction - The present disclosure involves a lighting apparatus. The lighting apparatus includes a polygon die. The polygon die includes a plurality of light-emitting diodes (LEDs). Each LED includes a plurality of epi-layers, the epi-layers containing a p-type layer, an n-type layer, and a multiple quantum well (MQW) disposed between the p-type layer and the n-type layer. Each LED includes a p-type electrode and an n-type electrode electrically coupled to the p-type layer and the n-type layer, respectively. The polygon die also includes a submount to which each of the LEDs is coupled. The p-type and the n-type electrodes are located between the submount and the epi-layers. The submount contains a plurality of conductive elements configured to electrically couple at least a portion of the plurality of LEDs in series. | 03-20-2014 |
20140077224 | Pre-Cutting a Back Side of a Silicon Substrate for Growing Better III-V Group Compound Layer on a Front Side of the Substrate - The present disclosure involves an apparatus. The apparatus includes a substrate having a front side a back side opposite the front side. The substrate includes a plurality of openings formed from the back side of the substrate. The openings collectively define a pattern on the back side of the substrate from a planar view. In some embodiments, the substrate is a silicon substrate or a silicon carbide substrate. Portions of the silicon substrate vertically aligned with the openings have vertical dimensions that vary from about 100 microns to about 300 microns. A III-V group compound layer is formed over the front side of the silicon substrate. The III-V group compound layer is a component of one of: a light-emitting diode (LED), a laser diode (LD), and a high-electron mobility transistor (HEMT). | 03-20-2014 |
20140077153 | Photonic Devices with Embedded Hole Injection Layer to Improve Efficiency and Droop Rate - The present disclosure involves a light-emitting device. The light-emitting device includes an n-doped gallium nitride (n-GaN) layer located over a substrate. A multiple quantum well (MQW) layer is located over the n-GaN layer. An electron-blocking layer is located over the MQW layer. A p-doped gallium nitride (p-GaN) layer is located over the electron-blocking layer. The light-emitting device includes a hole injection layer. In some embodiments, the hole injection layer includes a p-doped indium gallium nitride (p-InGaN) layer that is located in one of the three following locations: between the MQW layer and the electron-blocking layer; between the electron-blocking layer and the p-GaN layer; and inside the p-GaN layer. | 03-20-2014 |
20140077152 | III-V Group Compound Devices with Improved Efficiency and Droop Rate - The present disclosure involves an illumination apparatus. The illumination apparatus includes an n-doped semiconductor compound layer, a p-doped semiconductor compound layer spaced apart from the n-doped semiconductor compound layer, and a multiple-quantum-well (MQW) disposed between the first semiconductor compound layer and the second semiconductor compound layer. The MQW includes a plurality of alternating first and second layers. The first layers of the MQW have substantially uniform thicknesses. The second layers have graded thicknesses with respect to distances from the p-doped semiconductor compound layer. A subset of the second layers located most adjacent to the p-doped semiconductor compound layer is doped with a p-type dopant. The doped second layers have graded doping concentration levels that vary with respect to distances from the p-doped semiconductor layer. | 03-20-2014 |
20140065741 | Method and Apparatus for Accurate Die-to-Wafer Bonding - A method of light-emitting diode (LED) packaging includes coupling a number of LED dies to corresponding bonding pads on a sub-mount. A mold apparatus having concave recesses housing LED dies is placed over the sub-mount. The sub-mount, the LED dies, and the mold apparatus are heated in a thermal reflow process to bond the LED dies to the bonding pads. Each recess substantially restricts shifting of the LED die with respect to the bonding pad during the heating. | 03-06-2014 |
20140065740 | Single Phosphor Layer Photonic Device for Generating White Light or Color Lights - A photonic device generates light from a full spectrum of lights including white light. The device includes two or more LEDs grown on a substrate, each generating light of a different wavelength and separately controlled. A light-emitting structure is formed on the substrate and apportioned into the two or more LEDs by etching to separate the light-emitting structure into different portions. At least one of the LEDs is coated with a phosphor material so that different wavelengths of light are generated by the LEDs while the same wavelength of light is emitted from the light-emitting structure. | 03-06-2014 |
20140055039 | Light Color and Intensity Adjustable LED - An integrated photonic device includes a number of LEDs and a feedback mechanism that measures individual LED light outputs using a photo sensor via a light transmitter disposed in the vicinity of individual LEDs. A controller or driver adjusts a current driven to each LED using the detected values according to various logic based on the device application. | 02-27-2014 |
20140054637 | Omnidirectional Reflector - A system and method for manufacturing an LED is provided. A preferred embodiment includes a substrate with a distributed Bragg reflector formed over the substrate. A photonic crystal layer is formed over the distributed Bragg reflector to collimate the light that impinges upon the distributed Bragg reflector, thereby increasing the efficiency of the distributed Bragg reflector. A first contact layer, an active layer, and a second contact layer are preferably either formed over the photonic crystal layer or alternatively attached to the photonic crystal layer. | 02-27-2014 |
20140054616 | Method and Apparatus for Fabricating Phosphor-Coated LED Dies - The present disclosure involves a method of packaging a light-emitting diode (LED). According to the method, a group of metal pads and a group of LEDs are provided. The group of LEDs is attached to the group of metal pads, for example through a bonding process. After the LEDs are attached to the metal pads, each LED is spaced apart from adjacent LEDs. Also according to the method, a phosphor film is coated around the group of LEDs collectively. The phosphor film is coated on top and side surfaces of each LED and between adjacent LEDs. A dicing process is then performed to slice through portions of the phosphor film located between adjacent LEDs. The dicing process divides the group of LEDs into a plurality of individual phosphor-coated LEDs. | 02-27-2014 |
20140021483 | Forming Light-Emitting Diodes Using Seed Particles - A seed layer for growing a group | 01-23-2014 |
20130260484 | OPTIMIZING LIGHT EXTRACTION EFFICIENCY FOR AN LED WAFER - The present disclosure involves a method of fabricating a light-emitting diode (LED) wafer. The method first determines a target surface morphology for the LED wafer. The target surface morphology yields a maximum light output for LEDs on the LED wafer. The LED wafer is etched to form a roughened wafer surface. Thereafter, using a laser scanning microscope, the method investigates an actual surface morphology of the LED wafer. Afterwards, if the actual surface morphology differs from the target surface morphology beyond an acceptable limit, the method repeats the etching step one or more times. The etching is repeated by adjusting one or more etching parameters. | 10-03-2013 |
20130242550 | CHANGING LED LIGHT OUTPUT DISTRIBUTION THROUGH COATING CONFIGURATION - The present disclosure provides a lighting instrument. The lighting instrument includes a recessed light fixture, for example a troffer light or a batten light. The light fixture includes a plurality of light-emitting diode (LED) devices located on a board. The light fixture also includes a diffuser cap located on the board and housing the LED devices therein. The diffuser cap includes a plurality of coating regions. Each coating region is coated by a film containing white particles. The white particles can reflect and diffuse light emitted by the LED devices. The film in each coating region has a different white particle concentration level than other coating regions. | 09-19-2013 |
20130240831 | GROWING AN IMPROVED P-GAN LAYER OF AN LED THROUGH PRESSURE RAMPING - The present disclosure involves an apparatus. The apparatus includes a photonic die structure that includes a light-emitting diode (LED) die. The LED die is a vertical LED die in some embodiments. The LED die includes a substrate. A p-doped III-V compound layer and an n-doped III-V compound layer are each disposed over the substrate. A multiple quantum well (MQW) layer is disposed between the p-doped III-V compound layer and the n-doped III-V compound layer. The p-doped III-V compound layer includes a first region having a non-exponential doping concentration characteristic and a second region having an exponential doping concentration characteristic. In some embodiments, the second region is formed using a lower pressure than the first region. | 09-19-2013 |
20130221320 | LED WITH EMBEDDED DOPED CURRENT BLOCKING LAYER - The present disclosure involves an apparatus. The apparatus includes a photonic die structure that includes a plurality of layers. A current blocking layer is embedded in one of the plurality of layers. The current blocking layer is a doped layer. The present disclosure also involves a method of fabricating a light-emitting diode (LED). As a part of the method, an LED is provided. The LED includes a plurality of layers. A patterned mask is then formed over the LED. The patterned mask contains an opening. A dopant is introduced through the opening to a layer of the LED through either an ion implantation process or a thermal diffusion process. As a result of the dopant being introduced, a doped current blocking component is formed to be embedded within the layer of the LED. | 08-29-2013 |
20130215613 | LED PACKAGING STRUCTURE HAVING IMPROVED THERMAL DISSIPATION AND MECHANICAL STRENGTH - The present disclosure involves a lighting apparatus. The lighting apparatus includes a thermally-conductive substrate. The thermally-conductive substrate may include a substrate. The lighting apparatus also includes a printed circuit board (PCB). The PCB is located besides the thermally-conductive substrate. The PCB and the thermally-conductive substrate have different material compositions. The lighting apparatus also includes a photonic device located over the thermally-conductive substrate. The photonic device may include a light-emitting diode (LED) die. The photonic device is thermally coupled to the thermally-conductive substrate. The photonic device is electrically coupled to the printed circuit board. The lighting apparatus also includes a thermal dissipation structure. The thermal dissipation structure is thermally coupled to the thermally-conductive substrate. | 08-22-2013 |
20130214281 | METHOD OF GROWING A HIGH QUALITY III-V COMPOUND LAYER ON A SILICON SUBSTRATE - The present disclosure involves a method of fabricating a semiconductor device. A surface of a silicon wafer is cleaned. A first buffer layer is then epitaxially grown on the silicon wafer. The first buffer layer contains an aluminum nitride (AlN) material. A second buffer layer is then epitaxially grown on the first buffer layer. The second buffer layer includes a plurality of aluminum gallium nitride (Al | 08-22-2013 |
20130187571 | LED THERMAL PROTECTION STRUCTURES - The present disclosure discloses an apparatus for thermally protecting an LED device. The apparatus includes a substrate. A light-emitting device disposed on a first region of the substrate. The apparatus includes a thermistor disposed on a second region of the substrate. The second region is substantially spaced apart from the first region. The thermistor is thermally and electrically coupled to the light-emitting device. The present disclosure also discloses a method of thermally protecting an LED device. The method includes providing a substrate having a light-emitting diode (LED) die disposed thereon. The method includes detecting a temperature of the LED die using a negative temperature coefficient (NTC) thermistor. The NTC thermistor is positioned on a region of the substrate substantially away from the LED die. The method includes adjusting an electrical current of the LED die in response to the detecting. | 07-25-2013 |
20130157395 | Light-Emitting Diode (LED) Package Systems - A package system includes a substrate having at least one first thermally conductive structure through the substrate. At least one second thermally conductive structure is disposed over the at least one first thermally conductive structure. At least one light-emitting diode (LED) is disposed over the at least one second thermally conductive structure. | 06-20-2013 |
20130155673 | LED LIGHTING APPARATUS WITH FLEXIBLE LIGHT MODULES - The present disclosure involves a street light. The street light includes a base, a lamp post coupled to the base, and a lamp head coupled to the lamp post. The lamp head includes a housing and a plurality of LED light modules disposed within the housing. The LED light modules are separate and independent from each other. Each LED light module includes an array of LED that serve as light sources for the lamp. Each LED light module also includes a heat sink that is thermally coupled to the LED. The heat sink is operable to dissipate heat generated by the LED during operation. Each LED light module also includes a thermally conductive cover having a plurality of openings. Each LED is aligned with and disposed within a respective one of the openings. | 06-20-2013 |
20130134446 | COST-EFFECTIVE LED LIGHTING INSTRUMENT WITH GOOD LIGHT OUTPUT UNIFORMITY - The present disclosure involves a lighting instrument. The lighting instrument includes a board or substrate, for example, a printed circuit board. The lighting instrument also includes a plurality of light-emitting devices disposed on the substrate. The light-emitting devices may be light-emitting diode (LED) dies. The LED dies belong to a plurality of different bins. The bins are categorized based on the light output performance of the LED dies. In some embodiments, the LED dies may be binned based on the wavelength or radiant flux of the light output. The LED dies are distributed on the substrate according to a predefined pattern based on their bins. In some embodiments, the LED dies are bin-mixed in an interleaving manner. | 05-30-2013 |
20130045556 | Light-Emitting Devices with Textured Active Layer - A device includes a textured substrate having a trench extending from a top surface of the textured substrate into the textured substrate, wherein the trench comprises a sidewall and a bottom. A light-emitting device (LED) includes an active layer over the textured substrate. The active layer has a first portion parallel to the sidewall of the trench and a second portion parallel to the bottom of the trench. | 02-21-2013 |
20120298956 | Method of Separating Light-Emitting Diode from a Growth Substrate - A method of forming a light-emitting diode (LED) device and separating the LED device from a growth substrate is provided. The LED device is formed by forming an LED structure over a growth substrate. The method includes forming and patterning a mask layer on the growth substrate. A first contact layer is formed over the patterned mask layer with an air bridge between the first contact layer and the patterned mask layer. The first contact layer may be a contact layer of the LED structure. After the formation of the LED structure, the growth substrate is detached from the LED structure along the air bridge. | 11-29-2012 |
20120287635 | Light Emitting Diode Light Bar Module with Electrical Connectors Formed by Injection Molding - The present disclosure relates to methods for fabricating electrical connectors of a waterproof connector-heat sink assembly of a LED light bar module using injection molding. The methods include matching the coefficient of thermal expansion (CTE) of injection molding materials for the connectors and heat sinks. A heat sink and conductor pins are inserted into an injection mold and the injection molding materials are injected into the injection mold. An integrated connector-heat sink assembly is formed when the injection molding materials of the connectors form a waterproof seal with the heat sink when the injection molding materials solidify. Placement of the heat sink and conductor pins inside the injection mold is controlled to ensure that adhesive bonding between the injection molding materials and the heat sink is stronger than a maximum shear force. | 11-15-2012 |
20120286240 | Methods of Fabricating Light Emitting Diode Packages - An LED array comprises a growth substrate and at least two separated LED dies grown over the growth substrate. Each of LED dies sequentially comprise a first conductive type doped layer, a multiple quantum well layer and a second conductive type doped layer. The LED array is bonded to a carrier substrate. Each of separated LED dies on the LED array is simultaneously bonded to the carrier substrate. The second conductive type doped layer of each of separated LED dies is proximate to the carrier substrate. The first conductive type doped layer of each of LED dies is exposed. A patterned isolation layer is formed over each of LED dies and the carrier substrate. Conductive interconnects are formed over the patterned isolation layer to electrically connect the at least separated LED dies and each of LED dies to the carrier substrate. | 11-15-2012 |
20120228650 | Light Emitting Diode Emitter Substrate with Highly Reflective Metal Bonding - The present disclosure provides one embodiment of a method for fabricating a light emitting diode (LED) package. The method includes forming a plurality of through silicon vias (TSVs) on a silicon substrate; depositing a dielectric layer over a first side and a second side of the silicon substrate and over sidewall surfaces of the TSVs; forming a metal layer patterned over the dielectric layer on the first side and the second side of the silicon substrate and further filling the TSVs; and forming a plurality of highly reflective bonding pads over the metal layer on the second side of the silicon substrate for LED bonding and wire bonding. | 09-13-2012 |
20120225509 | LED Flip-Chip Package Structure with Dummy Bumps - A light-emitting device (LED) package component includes an LED chip having a first active bond pad and a second active bond pad. A carrier chip is bonded onto the LED chip through flip-chip bonding. The carrier chip includes a first active through-substrate via (TSV) and a second active TSV connected to the first and the second active bond pads, respectively. The carrier chip further includes a dummy TSV therein, which is electrically coupled to the first active bond pad, and is configured not to conduct any current when a current flows through the LED chip. | 09-06-2012 |