Tower Semiconductor Ltd. Patent applications |
Patent application number | Title | Published |
20150325624 | Logic Unit Including Magnetic Tunnel Junction Elements Having Two Different Anti-Ferromagnetic Layers - A logic unit for security engines or content addressable memory including Magnetic Tunnel Junction (MTJ) elements connected in series to form a NAND-type string, where each MTJ element includes a storage layer and a sense layer having different anti-ferromagnetic materials respectively having higher and lower blocking temperatures. During write/program, the string is heated above the higher blocking temperature, and magnetic fields are used to store bit values of a confidential logical pattern in the storage layers. The string is then cooled to an intermediate temperature between the higher and lower blocking temperatures and the field lines turned off to store bit-bar (opposite) values in the sense layers. During a pre-compare operation, the MTJ elements are heated to the intermediate temperature, and an input logical pattern is stored in the sense layers. During a compare operation, with the field lines off, a read current is passed through the string and measured. | 11-12-2015 |
20150325279 | High-Speed Compare Operation Using Magnetic Tunnel Junction Elements Including Two Different Anti-Ferromagnetic Layers - A match-in-place-type compare operation utilizes a string of Magnetic Tunnel Junction (MTJ) elements including storage layers and sense layers having different anti-ferromagnetic structures respectively having higher and lower blocking temperatures. Confidential data is written into the storage layers of the MTJ elements by heating the elements above the higher blocking temperature, and then orienting the storage and sense layers in first storage magnetization directions using field lines. The elements are then cooled to an intermediate temperature between the higher and lower blocking temperatures, and the field lines are turned off, setting the sense layers to preliminary storage magnetization directions opposite to the first directions. During a pre-compare phase, an input logic pattern is written into the sense layers by heating to the intermediate temperature. During a compare operation, with the field lines turned off, resistance of the MTJ string is detected by passing a read current through the string. | 11-12-2015 |
20150256060 | Soft-Start Circuit For Switching Regulator - A soft-start circuit for a switching regulator (e.g., a buck converter) in which the soft-start circuit supplies a DC ramp voltage to the switch regulator's pre-driver such that the pulsed gate voltage supplied to power switch during the initial soft-start operating phase includes a series of pulses having amplitudes that respectively gradually change (e.g., sequentially increase from 0V to the system operating voltage), whereby the regulated output voltage passed from the power switch to the load is gradually increased at a rate that prevents voltage overshoot and inrush current. The DC ramp voltage is generated, for example, by a current source that begins charging a capacitor at the beginning of the initial soft-start operating phase. This arrangement allows a constant-frequency ramp signal generated by a single oscillator to be shared by multiple switch regulators that are fabricated on an IC chip. | 09-10-2015 |
20150162369 | Single-Poly Floating Gate Solid State Direct Radiation Sensor Using STI Dielectric And Isolated PWells - Solid state radiation sensors include a floating gate (FG) structure having a large control capacitor region disposed on thick dielectric portion over a control gate (CG) implemented by an isolated P-well region, and a tunneling capacitor region disposed on thin gate oxide dielectric over another tunneling gate (TG) isolated P-well region. Opposite voltages (e.g., +5V/−5V) are respectively applied to the CG and TG P-well regions to charge the FG structure by Fowler-Nordheim tunneling. During exposure, radiation striking the sensor discharges the FG structure by generating electron-hole pairs in the dielectric portion separating the CG P-well region and the control capacitor region. After exposure, the total ionizing dose (TID) is calculated, e.g., by measuring the threshold voltage shift of a CMOS readout inverter controlled by the residual charge stored on the FG structure. Sensor performance is enhanced by metal plates, utilizing two control capacitors, or modifying the FG electrode layout. | 06-11-2015 |
20150137780 | Self-Adjustable Current Source Control Circuit For Linear Regulators - A self-adjustable current source control circuit utilizes a replica output stage, a sink current source that generates a reference current, and a negative feedback circuit to generate a sink current between a linear regulator output terminal and ground only when a load circuit connected to the linear regulator is in a low power consuming state. The replica output stage includes an 1:N scaled replica of the linear regulator's NMOS (or NPN) output stage transistor, and the negative feedback circuit utilizes two PMOS (or PNP) negative feedback transistors having the same N:1 size ratio and connected as a common gate amplifier, whereby one of the two negative feedback transistors turns on to draw the desired sink current from the regulator output terminal only when the load current falls below N times the reference current (i.e., only the load current is drawn through the output stage transistor during high load current conditions). | 05-21-2015 |
20150108425 | NANOSHELL, METHOD OF FABRICATING SAME AND USES THEREOF - A method of fabricating a nanoshell is disclosed. The method comprises coating a nanometric core made of a first material by a second material, to form a core-shell nanostructure and applying non-chemical treatment to the core-shell nanostructure so as to at least partially remove the nanometric core, thereby fabricating a nanoshell. The disclosed nanoshell can be used in the fabrication of transistors, optical devices (such as CCD and CMOS sensors), memory devices and energy storage devices. | 04-23-2015 |
20140273332 | METHOD FOR PRODUCING PHOTOVOLTAIC DEVICE ISOLATED BY POROUS SILICON - Photovoltaic devices are produced using a minimally modified standard process flow by forming lateral P-I-N light-sensitive diodes on silicon islands that are isolated laterally by trenches performed by RIE, and from an underlying support substrate by porous silicon regions. P+ and N+ doped regions are formed in a P− epitaxial layer, trenches are etched through the epitaxial layer into a P+ substrate, a protective layer (e.g., SiN) is formed on the trench walls, and then porous silicon is formed (e.g., using HF solution) in the trenches that grows laterally through the P+ substrate and merges under the island. The method is either utilized to form low-cost embedded photovoltaic arrays on CMOS IC devices, or the devices are separated from the P+ substrate by etching through the porous silicon to produce low-cost, high voltage solar arrays for solar energy sources, e.g., solar concentrators. | 09-18-2014 |
20140264500 | Photovoltaic Device Formed On Porous Silicon Isolation - A photovoltaic device includes lateral P-I-N light-sensitive diodes disposed on a silicon island formed by a P− epitaxial layer and surrounded by trenches that provide lateral isolation, where the island is separated from the substrate by a porous silicon region that is grown under the island and isolates the lower portions of the photovoltaic device from the highly doped substrate. The trenches extend through the P− epitaxial material into the P+ substrate to facilitate self-limiting porous silicon formation at the bottom of the island, and also to suppress electron-hole recombination. A protective layer (e.g., SiN) is formed on the trench walls to further restrict porous silicon formation to the bottom of the island. Black silicon on the trench walls enhances light capture. The photovoltaic devices form low-cost embedded photovoltaic arrays on CMOS IC devices, or are separated to produce low-cost, HV solar arrays for solar energy sources, e.g. for solar concentrators. | 09-18-2014 |
20140263950 | Single-Exposure High Dynamic Range CMOS Image Sensor Pixel With Internal Charge Amplifier - A single-exposure high dynamic range (HDR) image sensor utilizes a charge amplifier having two different charge-to-voltage conversion capacitors that read a single photodiode charge during a two-phase readout operation. The first capacitor has a lower capacitance and therefore higher conversion gain (sensitivity), and the second capacitor has a higher capacitance and therefore lower conversion gain (sensitivity). The two-phase readout operation samples the photodiode charge twice, once using the high sensitivity capacitor and once using the low sensitivity capacitor. The high sensitivity readout phase provides detailed low light condition data but is saturated under brighter light conditions, and the low sensitivity readout phase provides weak data under low light conditions but provides high quality image data under brighter light conditions. The final HDR image is created by combining both high and low sensitivity images into a single image while giving each of them the correct weighted value. | 09-18-2014 |
20140209994 | Embedded Cost-Efficient SONOS Non-Volatile Memory - A cost-efficient SONOS (CEONOS) non-volatile memory (NVM) cell for use in a CMOS IC, where the CEONOS NVM cell requires two or three additional masks, but is otherwise substantially formed using the same standard CMOS flow processes used to form NMOS transistors. The cell is similar to an NMOS cell but includes an oxide-nitride-oxide (ONO) layer that replaces the standard NMOS gate oxide and serves to store NVM data. The cells utilize special source/drain engineering to include pocket implants and lightly-doped drain extensions, which facilitate program/erase of the CEONOS NVM cells using low voltages (e.g., 5V). The polysilicon gate, source/drain contacts and metallization are formed using corresponding NMOS processes. The CEONOS NVM cells are arranged in a space-efficient X-array pattern such that each group of four cells share a drain diffusion and three bit lines. Programming involves standard CHE injection or pulse agitated interface substrate hot electron injection (PAISHEI). | 07-31-2014 |
20140070315 | Double-Resurf LDMOS With Drift And PSURF Implants Self-Aligned To A Stacked Gate "BUMP" Structure - A double-RESURF LDMOS transistor has a gate dielectric structure including a shallow field “bump” oxide region and an optional raised dielectric structure that provides a raised support for the LDMOS transistor's polysilicon gate electrode. Fabrication of the shallow field oxide region is performed through a hard “bump” mask and controlled such that the bump oxide extends a minimal depth into the LDMOS transistor's drift (channel) region. The hard “bump” mask is also utilized to produce an N-type drift (N-drift) implant region and a P-type surface effect (P-surf) implant region, whereby these implants are “self-aligned” to the gate dielectric structure. The N-drift implant is maintained at Vdd by connection to the LDMOS transistor's drain diffusion. An additional Boron implant is utilized to form a P-type buried layer that connects the P-surf implant to the P-body region of the LDMOS transistor, whereby the P-surf implant is maintained at 0V. | 03-13-2014 |
20130320443 | Deep Silicon Via As A Drain Sinker In Integrated Vertical DMOS Transistor - A vertical DMOS device implements one or more deep silicon via (DSV) plugs, thereby significantly reducing the layout area and on-resistance (RDS | 12-05-2013 |
20130293986 | Current Limit Circuit Architecture For Low Drop-Out Voltage Regulators - A current limiting circuit for a linear regulator includes an output stage transistor and a replica transistor, which have gates coupled to receive an output voltage from a linear amplifier and sources coupled to load circuitry. A drain of the output stage transistor is coupled to a V | 11-07-2013 |
20130201312 | Endoscope System Using CMOS Image Sensor Having Pixels Without Internal Sample/Hold Circuit - An endoscope system includes a host device and an endoscope including a very small area CMOS image sensor having only four pads (power, ground, digital in, analog out), and including an array of 4T pixels and associated control circuitry for performing correlated double sampling (CDS) to generate analog reset level and analog signal level values associated with light detected by photodiodes in each pixel. Instead of processing the analog values on-chip, the analog reset values and analog signal values are transmitted in separate sets one row at a time along with interleaved synchronization signals by way of a single analog contact pad to the host device of the endoscopic system, which uses the synchronization signals to reconstruct the sensor's internal clock in order to process the analog values. The endoscope housing thus requires only four wires and is made very small. | 08-08-2013 |
20130161264 | Cost-Efficient Treatment Of Fluoride Waste - A method and system for processing fluoride-containing wastewater includes treating the wastewater with brine (waste) created by the regeneration process implemented by in ion exchanging water softener. The brine, which is typically disposed of, contains both calcium and magnesium salts, in varying concentrations and ratios. The regeneration process brine is added to the fluoride-containing wastewater within a reaction tank, and the fluoride ion concentration is monitored. When the fluoride ion concentration falls below a predetermined level (e.g., 15 ppm), the flow of regeneration process brine is stopped. A pH controller monitors the pH within the reaction tank, and adds a basic agent to ensure that the pH remains above a predetermined level (e.g., pH>9). The pH control results in a clear effluent, and a sludge having a high settling rate and a high dewater ability. | 06-27-2013 |
20130127371 | CMOS Bootstrap Circuit For DC/DC Buck Converter Using Low Voltage CMOS Diode - A modified bootstrap circuit utilized, for example, in a high voltage DC/DC CMOS buck converter to convert a high input voltage (e.g., 24V) to a regulated voltage (e.g., 4V) for use, for example, by an LED driver circuit. The bootstrap circuit utilizes a feedback diode and a PMOS switch to avoid high reverse diode voltages across a low voltage bootstrap diode. A bootstrapped buck converter implements the bootstrap circuit to generate a high gate voltage on a high-side NMOS switch during all operating phases. The PMOS switch is controlled by the NMOS switch's output voltage to pass a system voltage (e.g., 5V) through the bootstrap diode whenever the output voltage drops low (e.g., 0V), and to shut off when the output voltage subsequently rises such that the feedback diode forward biases to pass the output voltage to the anode of the bootstrap diode. | 05-23-2013 |
20130075803 | Flash-To-ROM Conversion - Flash-to-ROM conversion is performed by converting single transistor flash memory cells to single transistor ROM cells. An S-Flash memory cell is converted to a programmed ROM cell by introducing a threshold voltage implant into the channel region of the S-Flash memory cell. Alternately, an S-Flash memory cell is converted to a programmed ROM cell by introducing a threshold voltage implant into a substrate region in alignment with an edge of the gate electrode of the S-Flash memory cell. The width of the mask through which this threshold voltage implant is performed can be varied, such that the threshold voltage implant region can have different dopant concentrations, thereby allowing multiple bits to be represented by the programmed ROM cell. In another embodiment, a Y-flash memory cell is converted to a programmed ROM cell by adjusting the length of a floating gate extension region of the Y-Flash memory cell. | 03-28-2013 |
20130052803 | Method For Generating A Three-Dimensional NAND Memory With Mono-Crystalline Channels Using Sacrificial Material - A method for generating three-dimensional (3D) non-volatile memory (NVM) arrays includes forming multiple parallel horizontally-disposed mono-crystalline silicon beams that are spaced apart and arranged in a vertical stack (e.g., such that an elongated horizontal air gap is defined between each adjacent beam in the stack), forming separate charge storage layers on each of the mono-crystalline silicon beams such that each charge storage layer includes a high-quality thermal oxide layer that entirely covers (i.e., is formed on the upper, lower and opposing side surfaces of) each of the mono-crystalline silicon beams, and then forming multiple vertically-disposed poly-crystalline silicon wordline structures next to the stack such that each wordline structure is connected to each of the bitline structures in the stack by way of corresponding portions of the separate charge storage layers. The memory cells are accessed during read/write operations by way of the corresponding wordline and bitline structures. | 02-28-2013 |
20130051150 | Three-Dimensional NAND Memory With Stacked Mono-Crystalline Channels - A three-dimensional (3D) non-volatile memory (NVM) array including spaced-apart horizontally-disposed bitline structures arranged in vertical stacks, each bitline structures including a mono-crystalline silicon beam and a charge storage layer entirely surrounding the beam. Vertically-oriented wordline structures are disposed next to the stacks such that each wordline structure contacts corresponding portions of the charge storage layers. NVM memory cells are formed at each bitline/wordline intersection, with corresponding portions of each bitline structure forming each cell's channel region. The bitline structures are separated by air gaps, and each charge storage layer includes a high-quality thermal oxide layer that entirely covers (i.e., is formed on the upper, lower and opposing side surfaces of) each of the mono-crystalline silicon beams. The 3D NVM array effectively includes multiple NVM NAND string structures, where each NAND string structure is formed by multiple series-connected NVM memory cells disposed along an associated bitline structure. | 02-28-2013 |
20120292675 | PHOTOVOLTAIC DEVICE WITH LATERAL P-I-N LIGHT-SENSITIVE DIODES - A photovoltaic device includes lateral P-I-N light-sensitive diodes respectively formed in portions of a planar semiconductor material (e.g., polycrystalline or crystalline silicon) layer that is entirely disposed on an insulating material (e.g., SiO2) layer utilizing, e.g., STI or SOI techniques. Each light-sensitive diode includes parallel elongated doped regions respectively formed by P+ and N+ dopant extending entirely through the semiconductor layer material and separated by an intervening elongated intrinsic (native) region. The light-sensitive diodes are connected in series by patterned conductive (e.g., metal film) structures. Optional bypass diodes are formed next to each lateral P-I-N light-sensitive diodes. Optional trenches are defined between adjacent light-sensitive diodes. The photovoltaic devices are either utilized to form low-cost embedded low power photovoltaic arrays on CMOS IC devices, or produced on low-cost SOI substrates to provide, for example, low-cost, high voltage solar arrays for solar energy concentrators. | 11-22-2012 |
20110121379 | Three-Terminal Single Poly NMOS Non-Volatile Memory Cell With Shorter Program/Erase Times - A three terminal non-volatile memory (NVM) cell for a CMOS IC is formed by either a standard CMOS process flow or a slightly modified CMOS process flow. The NVM cell includes read and injection transistors that share a common floating gate. The floating gate includes a portion disposed over the channel region of the read transistor, a portion disposed over the channel region of the injection transistor, and a portion extending into an enlarged drain diffusion area away from the channel regions, whereby the gate-to-drain capacitance is higher than the gate-to-source capacitances. The source/drain of the injection transistor are formed using different LDD implants to achieve faster program/erase. Alternatively, an optional CHE enhancing implant is added to the source/drain of the injection transistor to enhance CHE programming. Both HV LDD and LV LDD implants are introduced together enabling LDD implant merging under the floating gate extension. | 05-26-2011 |
20110050874 | CMOS Image Sensor Pixel Without Internal Sample/Hold Circuit - A very small area CMOS image sensor, e.g., for an endoscopic system, includes only four pads (power, ground, digital in, analog out), and includes an array of 4T pixels and associated control circuitry for performing correlated double sampling (CDS) to generate analog reset level and analog signal level values associated with light detected by photodiodes in each pixel. Instead of processing the analog values on-chip, the analog reset values and analog signal values are transmitted in separate sets one row at a time along with interleaved synchronization signals by way of a single analog contact pad, e.g., to a host device of an endoscopic system, which uses the synchronization signals to reconstruct the sensor's internal clock in order to process the analog values. An endoscope housing incorporating the CMOS image sensor thus requires only four wires. | 03-03-2011 |
20110013064 | CMOS Image Sensor With Wide (Intra-Scene) Dynamic Range - A CMOS image sensor uses a special exposure control circuit to independently adjust the photodiode exposure (integration) time for each pixel in a pixel array to obtain non-saturated photodiode charges for each pixel. Exposure time adjustment involves extrapolating a pixel's final photodiode charge using an intermediate photodiode charge measured after a predetermined portion of an exposure frame period. If the intermediate photodiode charge is, e.g., over 50% of the photodiode's full-well capacity after half of the exposure frame period, then saturation is likely and the photodiode is reset to integrate only during the remaining time. If not, then the photodiode integrates over the allotted exposure frame period. Data indicating the length of the exposure portion is stored as analog data on the memory node of each pixel, and readout of the final photodiode charge is performed using Correlated Double Sampling (CDS) techniques. | 01-20-2011 |
20100237228 | CMOS Image Sensor Pixel With Internal Charge Amplifier - A CMOS image sensor in which each column of pixels is connected to a signal line that is coupled to a current source, and each pixel includes a charge amplifier having a common source configuration arranged such that a charge generated by its photodiode is amplified by the charge amplifier and transmitted to readout circuitry by way of the signal line. In one embodiment the charge amplifier utilizes an NMOS transistor to couple the photodiode charge in an inverted manner to the signal line while converting the charge to a voltage through a capacitor coupled between the signal line and photodiode (i.e., forming a feedback of the NMOS amplifier transistor). | 09-23-2010 |
20100188901 | Three-Terminal Single Poly NMOS Non-Volatile Memory Cell - A three terminal non-volatile memory (NVM) cell for a CMOS IC is formed by a standard CMOS process flow. The NVM cell includes two transistors that share a common floating gate. The floating gate includes a first portion disposed over the channel region of the first (NMOS) transistor, a second portion disposed over the channel region of the second (NMOS or PMOS) transistor, and a third portion extending into an enlarged drain diffusion area away from the channel regions, whereby the gate-to-drain capacitance is higher than the gate-to-source capacitances. A pocket implant or CMOS standard LV N-LDD is formed under the second transistor to enhance CHE programming. Both HV LDD and LV LDD implants are introduced together enabling LDD implant merging under the floating gate extension. The floating gate is formed using substantially T-shaped, C-shaped, U-shaped, Y-shaped or O-shaped polysilicon structures. Various array addressing schemes are disclosed. | 07-29-2010 |
20100172184 | Asymmetric Single Poly NMOS Non-Volatile Memory Cell - An asymmetric non-volatile memory (NVM) cell for a CMOS IC formed by a standard CMOS process flow used to form both low voltage and high voltage transistors on a substrate. The NVM cell includes an NMOS floating gate transistor and an optional select transistor. The floating gate transistor includes an elongated floating gate having a first portion disposed over the channel region C | 07-08-2010 |
20100157669 | Floating Gate Inverter Type Memory Cell And Array - A non-volatile memory (NVM) cell and array includes a control capacitor, tunneling capacitor, CMOS inverter and output circuit. The CMOS inverter includes PMOS and NMOS inverter transistors. The control capacitor, tunneling capacitor and PMOS and NMOS inverter transistors share a common floating gate, which is programmed/erased by Fowler-Nordheim tunneling. The output circuit includes PMOS and NMOS select transistors. The PMOS inverter and select transistors share a common source/drain region. Similarly, the NMOS inverter and select transistors share a common source/drain region. This configuration minimizes the required layout area of the non-volatile memory cell and allows design of arrays with smaller footprints. Alternately, the tunneling capacitor may be excluded, further reducing the required layout area of the NVM cell. In this case, the NMOS inverter transistor functions as a tunneling capacitor for programming and erasing the cell, and the PMOS inverter transistor functions as a tunneling capacitor for erasing the cell. | 06-24-2010 |
20100102388 | LDMOS Transistor Having Elevated Field Oxide Bumps And Method Of Making Same - A low Rdson LDMOS transistor having a shallow field oxide region that separates a gate electrode of the transistor from a drain diffusion region of the transistor. The shallow field oxide region is formed separate from the field isolation regions (e.g., STI regions) used to isolate circuit elements on the substrate. Fabrication of the shallow field oxide region is controlled such that this region extends below the upper surface of the semiconductor substrate to a depth that is much shallower than the depth of field isolation regions. For example, the shallow field oxide region may extend below the upper surface of the substrate by only Angstroms or less. As a result, the current path through the resulting LDMOS transistor is substantially unimpeded by the shallow field oxide region, resulting in a low on-resistance. | 04-29-2010 |
20100027347 | Three-Terminal Single Poly NMOS Non-Volatile Memory Cell - A three terminal non-volatile memory (NVM) cell for a CMOS IC is formed by a standard CMOS process flow. The NVM cell includes two transistors that share a common floating gate. The floating gate includes a first portion disposed over the channel region of the first (NMOS) transistor, a second portion disposed over the channel region of the second (NMOS or PMOS) transistor, and a third portion extending into an enlarged drain diffusion area away from the channel regions, whereby the gate-to-drain capacitance is higher than the gate-to-source capacitances. A pocket implant or CMOS standard LV N-LDD is formed under the second transistor to enhance CHE programming. Both HV LDD and LV LDD implants are introduced together enabling LDD implant merging under the floating gate extension. The floating gate is formed using substantially T-shaped, C-shaped, U-shaped, Y-shaped or O-shaped polysilicon structures. Various array addressing schemes are disclosed. | 02-04-2010 |
20100027346 | Asymmetric Single Poly NMOS Non-Volatile Memory Cell - An asymmetric non-volatile memory (NVM) cell for a CMOS IC formed by a standard CMOS process flow used to form both low voltage and high voltage transistors on a substrate. The NVM cell includes an NMOS floating gate transistor and an optional select transistor. The floating gate transistor includes an elongated floating gate having a first portion disposed over the channel region C | 02-04-2010 |
20090261235 | CMOS Image Sensor With High Sensitivity Wide Dynamic Range Pixel For High Resolution Applications - A CMOS image sensor in which each pixel includes a conventional pinned diode (photodiode), a Wide Dynamic Range (WDR) detection (e.g., a simplified time-to-saturation (TTS)) circuit, a correlated double sampling (CDS) circuit, and a single output chain that is shared by both the CDS and WDR circuits. The pinned diode is used in the conversion of photons into charge in each pixel. In one embodiment, light received by the photodiode is processed using a TTS operation during the CDS integration phase, and the resulting TTS output signal is used to determine whether the photodiode is saturated. When the photodiode is saturated, the TTS output signal is processed to determine the amount of light received by the photodiode. When the photodiode is not saturated, the amount of light received by the photodiode is determined using signals generated by the readout phase of the CDS operation. | 10-22-2009 |
20090239351 | Method For Fabricating Capacitor Structures Using The First Contact Metal - A capacitor structure is fabricated with only slight modifications to a conventional single-poly CMOS process. After front-end processing is completed, grooves are etched through the pre-metal dielectric layer to expose polysilicon structures, which may be salicided or non-salicided. A dielectric layer is formed over the exposed polysilicon structures. A conventional contact process module is then used to form contact openings through the pre-metal dielectric layer. The mask used to form the contact openings is then removed, and conventional contact metal deposition steps are performed, thereby simultaneously filling the contact openings and the grooves with the contact (electrode) metal stack. A planarization step removes the upper portion of the metal stack, thereby leaving metal contacts in the contact openings, and metal electrodes in the grooves. The metal electrodes may form, for example, transistor gates, EEPROM control gates or capacitor plates. | 09-24-2009 |
20090213660 | Three-Terminal Single Poly NMOS Non-Volatile Memory Cell - A three terminal non-volatile memory (NVM) cell for a CMOS IC is formed by a standard CMOS process flow. The NVM cell includes two transistors that share a common floating gate. The floating gate includes a first portion disposed over the channel region of the first (NMOS) transistor, a second portion disposed over the channel region of the second (NMOS or PMOS) transistor, and a third portion extending into an enlarged drain diffusion area away from the channel regions, whereby the gate-to-drain capacitance is higher than the gate-to-source capacitances. A pocket implant or CMOS standard LV N-LDD is formed under the second transistor to enhance CHE programming. Both HV LDD and LV LDD implants are introduced together enabling LDD implant merging under the floating gate extension. The floating gate is formed using substantially T-shaped, C-shaped, U-shaped, Y-shaped or O-shaped polysilicon structures. Various array addressing schemes are disclosed. | 08-27-2009 |
20090212342 | Asymmetric Single Poly NMOS Non-Volatile Memory Cell - An asymmetric non-volatile memory (NVM) cell for a CMOS IC formed by a standard CMOS process flow used to form both low voltage and high voltage transistors on a substrate. The NVM cell includes an NMOS floating gate transistor and an optional select transistor. The floating gate transistor includes an elongated floating gate having a first portion disposed over the channel region C | 08-27-2009 |
20090181530 | High-K Dielectric Stack And Method Of Fabricating Same - A method for improving the reliability of a high-k dielectric layer or a high-k dielectric stack by forming an amorphous high-k dielectric layer over an insulating layer, doping the amorphous high-k dielectric layer with nitrogen atoms, and subsequently heating the resulting structure at a temperature greater than or equal to the crystallization temperature of the high-k dielectric material, thereby transforming the high-k dielectric material from an amorphous state to a crystalline state, and causing nitrogen atoms to diffuse into the insulating layer. | 07-16-2009 |
20090181491 | High-Resolution Integrated X-Ray CMOS Image Sensor - An X-ray image sensor having scintillating material embedded into wave-guide structures fabricated in a CMOS image sensor (CIS). After the CIS has been fabricated, openings (deep pores) are formed in the back side of the CIS wafer. These openings terminate at a distance of about 1 to 5 microns below the upper silicon surface of the wafer. The depth of these openings can be controlled by stopping on a buried insulating layer, or by stopping on an epitaxial silicon layer having a distinctive doping concentration. The openings are aligned with corresponding photodiodes of the CIS. The openings may have a shape that narrows as approaching the photodiodes. A thin layer of a reflective material may be formed on the sidewalls of the openings, thereby improving the efficiency of the resulting waveguide structures. Scintillating material (e.g., CsI(Tl)) is introduced into the openings using a ForceFill™ technology or by mechanical pressing. | 07-16-2009 |
20090033532 | HIGH RESOLUTION COLUMN-BASED ANALOG-TO-DIGITAL CONVERTER WITH WIDE INPUT VOLTAGE RANGE FOR DENTAL X-RAY CMOS IMAGE SENSOR - An imaging system including column-parallel ADCs that operate in response to a single slope global ramp signal and a matched global ramp line signal that has a voltage representative of a dark pixel value. The signal paths of the global ramp signal and the matched global ramp line signal are matched to minimize noise effects. Prior to performing a pixel read operation, the global ramp signal is increased through a first voltage range (below the dark pixel value) to ensure that the column-parallel ADCs are operating in a linear range. The first voltage range can be adjusted to cancel offset error associated with the column parallel ADCs. The column-parallel ADCs provide output signals having a full voltage swing between V | 02-05-2009 |
20090033370 | COMPARATOR WITH LOW SUPPLIES CURRENT SPIKE AND INPUT OFFSET CANCELLATION - A current control circuit is coupled in parallel with the current paths of a differential comparator circuit to ensure that a substantially constant current is drawn from a current source during all operating phases of a comparator. The current control circuit is biased by a reference voltage, which is also used to bias a V− input terminal of the differential comparator circuit. The reference voltage is stored by a sample capacitor, which is charged by applying the reference voltage to a V+ input terminal of the differential comparator circuit while coupling an output terminal of the differential comparator circuit to the sample capacitor in a unity feedback configuration. | 02-05-2009 |
20090011576 | Ultra-Violet Protected Tamper Resistant Embedded EEPROM - A pre-metal dielectric structure of a single-poly EEPROM structure includes a UV light-absorbing film, which prevents the charge on a floating gate of the EEPROM structure from being changed in response to UV radiation. In one embodiment, the pre-metal dielectric structure includes a first pre-metal dielectric layer, an amorphous silicon layer located over the first pre-metal dielectric layer, and a second pre-metal dielectric layer located over the amorphous silicon layer. | 01-08-2009 |
20080242033 | Self-Aligned LDMOS Fabrication Method Integrated Deep-Sub-Micron VLSI Process, Using A Self-Aligned Lithography Etches And Implant Process - An integrated circuit includes both LDMOS devices and one or more low-power CMOS devices that are concurrently formed on a substrate using a deep sub-micron VLSI fabrication process. The LDMOS polycrystalline silicon (polysilicon) gate structure is patterned using a two-mask etching process. The first etch mask is used to define a first edge of the gate structure located away from the deep body/drain implant. The second etch mask is then used to define a second edge of the gate structure, and the second etch mask is then retained on the gate structure during subsequent formation of the deep body/drain implant. After the deep implant, shallow implants and metallization are formed to complete the LDMOS device. | 10-02-2008 |
20080237653 | Deep Implant Self-Aligned To Polysilicon Gate - A CMOS image sensor includes a pinned photodiode and a transfer gate that are formed using a thick mask that is self-aligned to at least one edge of the polysilicon gate structure to facilitate both the formation of a deep implant and to provide proper alignment between the photodiode implant and the gate. In one embodiment a drain side implant is formed concurrently with the deep n-type implant of the photodiode. After the deep implant, the mask is removed and a shallow p+ implant is formed to complete the photodiode. In another embodiment, the polysilicon is etched to define only a drain side edge, a shallow drain side implant is performed, and then a thick mask is provided and used to complete the gate structure, and is retained during the subsequent high energy implant. Alternatively, the high energy implant is performed prior to the shallow drain side implant. | 10-02-2008 |