TEL SOLAR AG Patent applications |
Patent application number | Title | Published |
20150340544 | METHOD FOR ANNEALING A THIN FILM PHOTOVOLTAIC CELL DEVICE - A method of method for annealing a thin film solar cell device is described. The method includes vacuum annealing an as-deposited photovoltaic cell stack composed of a first electrode, a p-i-n junction having at least one p-doped layer, at least one n-doped layer, and at least one intrinsic layer disposed there between, and a second electrode. The vacuum annealing is performed in a non-plasma, vacuum environment by elevating a temperature of the photovoltaic cell stack to an anneal temperature within the range of between 150 degrees C. and 250 degrees C. | 11-26-2015 |
20150280049 | Multi-junction Thin-Film Silicon Solar Cells with a Recrystallized Silicon-based Sub-Cell - This application relates to systems and methods for multi-junction solar cells that includes at least one recrystallized silicon layer. The recrystallized silicon lay may have a microcrystalline structure following a heat treatment or laser treatment of an amorphous silicon layer. The multi-junction solar cell may be a p-i-n or n-i-p structure that may include a p-type doped silicon layer, an intrinsic silicon layer, and an n-doped silicon layer. In one embodiment, the intrinsic layer in either type of structure may be the recrystallized silicon layer. | 10-01-2015 |
20150207006 | SYSTEM AND METHOD FOR TRAPPING LIGHT IN A SOLAR CELL - This application relates to systems and methods for improving solar cell efficiently by enabling more light to be captured by the absorber layer. The reflector layer in a solar cell may be designed to reflect light back into the absorber layer that has already passed through the absorber layer. The reflector layer may include a surface protrusion that has a surface that has an angle of approximately 45 degrees. Incident light is reflected from that surface towards the absorber layer or towards the reflector layer which, in turn, reflects the light back towards the absorber layer or the silicon stack. The light may be reflected at an angle that enables the light to have total internal reflection within the silicon layer (e.g., absorber layer, μc-Si layer, and a-Si layer). | 07-23-2015 |
20150091546 | POWER MEASUREMENT ANALYSIS OF PHOTOVOLTAIC MODULES - A method of measuring a current-voltage (IV) characteristic for a photovoltaic (PV) device is described. The method includes providing a PV module for measuring an IV characteristic; exposing the PV module to a solar electromagnetic (EM) spectrum; and acquiring an IV data point on the IV characteristic. The acquisition of an IV data point includes measuring plural IV segments by repetitively applying and sweeping a voltage across the PV module from a unique initial voltage to a target voltage within a time scale for exposing said PV module to the solar EM spectrum, and interpreting a measured current at the target voltage as the IV data point on the IV characteristic if the plural IV segments converge at the target voltage. | 04-02-2015 |
20140102522 | A-SI:H ABSORBER LAYER FOR A-SI SINGLE- AND MULTIJUNCTION THIN FILM SILICON SOLAR CELL - The invention relates to a method for manufacturing a thin film solar cell, comprising the sequential steps of a) depositing a positively doped Si layer ( | 04-17-2014 |
20130298987 | METHOD FOR MANUFACTURING A MULTILAYER OF A TRANSPARENT CONDUCTIVE OXIDE - A multi-part transparent conductive zinc oxide layer for a photoelectric conversion device, and a method of producing same. The transparent conductive zinc oxide layer includes at least one basic layer sequence with a varying boron dopant concentration. The basic layer sequence includes a thinner transparent conductive zinc oxide higher-boron-doped layer and a thicker transparent conductive zinc oxide lower-boron-doped layer. The doping density through each individual conductive zinc oxide layer is substantially constant, which is achieved by intentionally doping the thicker transparent conductive zinc oxide lower-boron-doped layer. Optionally, an interlayer may be present between the at least one basic layer sequence and the substrate or an n-doped silicon layer upon which it is disposed. This advantageously permits efficient Edge Isolation by Laser EIL ablation of the transparent conductive zinc oxide layers while maintaining good electrical and optical properties in said layers. | 11-14-2013 |
20130291933 | SiOx n-LAYER FOR MICROCRYSTALLINE PIN JUNCTION - The present invention concerns a light conversion device comprising at least direction of impinging light one photovoltaic light conversion layer stack (43, 51) comprising a p-i-n junction and situated between a front (42) and back (47) electrode, wherein the n-layer (49) of the layer stack (43) situated closest to the back electrode (47) consists of a n-doped silicon- and oxygen-containing (SiOx) microcrystalline layer, and is in direct contact with the back electrode (47). The invention equally concerns a corresponding method for manufacturing such a light conversion device. The requirement for intermediate adhesion/interface layers between SiOx layer and back electrode can thus be obviated, resulting in simplified manufacture. | 11-07-2013 |
20130269767 | METHOD OF COATING A SUBSTRATE FOR MANUFACTURING A SOLAR CELL - The invention relates to a method of coating a substrate for manufacturing a solar cell in a deposition environment, the method comprising the steps of: a) Depositing a first zinc oxide layer onto a substrate. Reducing a zinc precursor content in the deposition environment, c) Treating the first zinc oxide layer with a mixture of diborane and water to form a plurality of coating seeds on the surface of the first zinc oxide layer, and d) Depositing a second zinc oxide layer onto the first zinc oxide layer. The method according to the invention allows improving the material quality of silicon layers which may later be grown on such a substrate. Additionally, the light scattering and subsequent light trapping in a respective solar cell may be enhanced by a method according to the invention. The present invention further relates to a solar cell being manufactured according to the invention. | 10-17-2013 |
20130216731 | CONTROL OF DIFFERENTIAL PRESSURE IN PECVD SYSTEMS - A method and apparatus for manufacturing thin films is described, wherein, in a deposition system comprising an inner non-airtight enclosure for containing at least one substrate, an outer airtight chamber completely surrounding said enclosure, an exhaust operatively connected to both, said inner chamber is kept at a pressure lower than the pressure within said outer enclosure, especially a pressure difference of less than I mbar. The apparatus may exhibit two butterfly vents arranged between inner enclosure, outer chamber and an exhaust for controlling said pressure difference. | 08-22-2013 |
20130174899 | A-SI:H ABSORBER LAYER FOR A-SI SINGLE- AND MULTIJUNCTION THIN FILM SILICON SOLAR CELLS - In order to improve a thin film solar cell with an amorphous silicon absorber layer being in single or in tandem configuration, the addressed absorber layer of a-Si:H is manufactured by plasma enhanced vapor deposition in an RF-SiH | 07-11-2013 |
20130140287 | PROCESS AND APPARATUS FOR ABLATION - An ablation method including a steps of ablating a region of a substrate ( | 06-06-2013 |