TEL FSI, Inc. Patent applications |
Patent application number | Title | Published |
20150068560 | APPARATUS AND METHOD FOR SCANNING AN OBJECT THROUGH A FLUID SPRAY - An apparatus for treating the surface of a microelectronic workpiece via impingement of the surface with at least one fluid and a method for operating the apparatus are described. In particular, the apparatus includes a treatment chamber defining an interior space to treat the microelectronic workpiece with at least one fluid within the treatment chamber, and a movable chuck that supports the workpiece within the treatment chamber. The apparatus further includes a workpiece translational drive system configured to translate the movable chuck between a workpiece load position and at least one processing position at which the workpiece is treated with the at least one fluid using at least one nozzle connected to at least one fluid supply, and a workpiece rotational drive system configured to rotate the microelectronic workpiece. | 03-12-2015 |
20140332034 | PROCESS COMPRISING WATER VAPOR FOR HAZE ELIMINATION AND RESIDUE REMOVAL - A method of treating a substrate comprises removing material from a substrate using a treatment protocol to provide a treated substrate followed by a rinsing step. In the rinsing step at least one stream comprising a rinsing fluid is introduced and water vapor is caused to collide with and atomize the rinsing fluid. The atomized rinsing fluid is caused to rinsingly contact the treated substrate. | 11-13-2014 |
20140277682 | Processing System and Method for Providing a Heated Etching Solution - A method and processing system are provided for independent temperature and hydration control for an etching solution used for treating a wafer in process chamber. The method includes circulating the etching solution in a circulation loop, maintaining the etching solution at a hydration setpoint by adding or removing water from the etching solution, maintaining the etching solution at a temperature setpoint that is below the boiling point of the etching solution in the circulation loop, and dispensing the etching solution into the process chamber for treating the wafer. In one embodiment, the dispensing includes dispensing the etching solution into a processing region proximate the wafer in the process chamber, introducing steam into an exterior region that is removed from the wafer in the process chamber, and treating the wafer with the etching solution and the steam. | 09-18-2014 |
20140264153 | Processing System and Method for Providing a Heated Etching Solution - Embodiments of the invention provide a processing system and a method for processing with a heated etching solution. In one example, tight control over temperature and hydration level of an acidic etching solution is provided. According to one embodiment, the method includes forming the heated etching solution in a first circulation loop, providing the heated etching solution in the process chamber for treating a substrate, forming an additional heated etching solution in a second circulation loop, and supplying the additional heated etching solution to the first circulation loop. According to one embodiment, the processing system includes a process chamber for treating the substrate with the heated etching solution, a first circulation loop for providing the heated etching solution into the process chamber, and a second circulation loop for forming an additional heated etching solution and supplying the additional heated etching solution to the first circulation loop. | 09-18-2014 |
20140206200 | PROCESS FOR INCREASING THE HYDROPHILICITY OF SILICON SURFACES FOLLOWING HF TREATMENT - A method for performing an oxide removal process is described. The method includes providing a substrate having an oxide layer, and preparing a patterned mask layer on the oxide layer, wherein the patterned mask layer has a pattern exposing at least a portion of the oxide layer. An HF treatment of the substrate is performed to transfer the pattern at least partially through the oxide layer, wherein the HF treatment exposes a silicon surface. Following the performing of the HF treatment, a surface property of the silicon surface is modified, wherein the modifying includes administering at least one oxidizing agent to contact the silicon surface to cause chemical oxidation of the silicon surface. And, following the modifying of the surface property, at least a portion of the patterned mask layer or a residual portion of the patterned mask layer is removed. | 07-24-2014 |
20140206195 | PROCESS FOR REMOVING CARBON MATERIAL FROM SUBSTRATES - A method of removing carbon materials, preferably amorphous carbon, from a substrate includes dispensing a liquid sulfuric acid composition including sulfuric acid and/or its desiccating species and precursors and having a water/sulfuric acid molar ratio of no greater than 5:1 onto an material coated substrate in an amount effective to substantially uniformly coat the carbon material coated substrate. The liquid sulfuric acid composition is exposed to water vapor in an amount effective to increase the temperature of the liquid sulfuric acid composition above the temperature of the liquid sulfuric acid composition prior to exposure to the water vapor. In preferred embodiments, amorphous carbon is selectively removed as compared to a silicon oxide (e.g., silicon dioxide) and/or silicon nitride. | 07-24-2014 |
20130213485 | TOOLS AND METHODS FOR PROCESSING MICROELECTRONIC WORKPIECES USING PROCESS CHAMBER DESIGNS THAT EASILY TRANSITION BETWEEN OPEN AND CLOSED MODES OF OPERATION - Strategies for tool designs and their uses wherein the tools can operate in either closed or open modes of operation. The tools easily transition between open and closed modes on demand. According to one general strategy, environmentally controlled pathway(s) couple the ambient to one or more process chambers. Air amplification capabilities upstream from the process chamber(s) allow substantial flows of air to be introduced into the process chamber(s) on demand. Alternatively, the fluid pathways are easily closed, such as by simple valve actuation, to block egress to the ambient through these pathways. Alternative flows of nonambient fluids can then be introduced into the process chamber(s) via pathways that are at least partially in common with the pathways used for ambient air introduction. In other strategies, gap(s) between moveable components are sealed at least with flowing gas curtains rather than by relying only upon direct physical contact for sealing. | 08-22-2013 |
20130203262 | Process for Silicon Nitride Removal Selective to SiGex - A method for selectively removing silicon nitride is described. In particular, the method includes providing a substrate having a surface with silicon nitride exposed on at least one portion of the surface and SiGe | 08-08-2013 |
20130115782 | PROCESS FOR REMOVING MATERIAL FROM SUBSTRATES - A method of removing materials, and preferably photoresist, from a substrate comprises dispensing a liquid sulfuric acid composition comprising sulfuric acid and/or its desiccating species and precursors and having a water/sulfuric acid molar ratio of no greater than 5:1 onto an material coated substrate in an amount effective to substantially uniformly coat the material coated substrate. The substrate is preferably heated to a temperature of at least about 90° C., either before, during or after dispensing of the liquid sulfuric acid composition. After the substrate is at a temperature of at least about 90° C., the liquid sulfuric acid composition is exposed to water vapor in an amount effective to increase the temperature of the liquid sulfuric acid composition above the temperature of the liquid sulfuric acid composition prior to exposure to the water vapor. The substrate is then preferably rinsed to remove the material. | 05-09-2013 |