TEL EPION INC. Patent applications |
Patent application number | Title | Published |
20140123457 | PRE-ALIGNED NOZZLE/SKIMMER - A method of assembling a nozzle/skimmer module includes coupling a nozzle assembly and skimmer cartridge assembly in a rigid tandem configuration to more accurately control the formation of the Gas Cluster Ion Beam (GCIB). The nozzle/skimmer module is pre-aligned before installation in a production GCIB processing system to more accurately position the GCIB. | 05-08-2014 |
20130330924 | Gas Cluster Ion Beam Process for Opening Conformal Layer in a High Aspect Ratio Contact Via - A method for opening a conformal layer at the bottom of a contact via on a substrate is described. The method includes providing a substrate having a first layer with a via pattern formed therein and a second layer conformally deposited on the first layer and within the via pattern to establish a contact via pattern characterized by an initial mid-critical dimension (CD). The method further includes etching through the second layer at the bottom of the contact via pattern to extend the contact via pattern through the second layer and form a contact via while retaining at least part of the second layer on the top surface of the first layer, the corner at the entrance to the via pattern, and the sidewalls of the via pattern, wherein the etching is performed by irradiating the substrate with a gas cluster ion beam (GCIB) according to a GCIB etching process. | 12-12-2013 |
20130330845 | GAS CLUSTER ION BEAM PROCESS FOR OPENING CONFORMAL LAYER IN A HIGH ASPECT RATIO CONTACT VIA - A method for patterning a layer at a bottom of a high aspect ratio feature of a substrate is described. The method includes providing the substrate having a first layer with a feature pattern overlying a second layer. The feature pattern is characterized with an initial critical dimension (CD), an initial corner profile, and an aspect ratio of 5:1 or greater. The method further includes etching through at least a portion of the second layer at the bottom of the feature pattern to extend the feature pattern at least partially into the second layer while retaining a final CD within a threshold of the initial CD and a final corner profile within a threshold of the initial corner profile using a gas cluster ion beam (GCIB) etching process. | 12-12-2013 |
20130309872 | GAS CLUSTER ION BEAM ETCHING PROCESS FOR ACHIEVING TARGET ETCH PROCESS METRICS FOR MULTIPLE MATERIALS - A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the GCIB etch processing includes setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve one or more target etch process metrics. | 11-21-2013 |
20130230984 | METHOD TO ALTER SILICIDE PROPERTIES USING GCIB TREATMENT - A method of manufacturing a semiconductor device is described. The method comprises performing a gas cluster ion beam (GCIB) pre-treatment and/or post-treatment of at least a portion of a silicon-containing substrate during formation of a silicide region. | 09-05-2013 |
20130224950 | METHOD TO ALTER SILICIDE PROPERTIES USING GCIB TREATMENT - A method of manufacturing a semiconductor device is described. The method comprises performing a gas cluster ion beam (GCIB) pre-treatment and/or post-treatment of at least a portion of a silicon-containing substrate during formation of a silicide region. | 08-29-2013 |
20130196509 | Gas Cluster Ion Beam Etching Process for Etching Si-Containing, Ge-Containing, and Metal-Containing Materials - A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the GCIB etch processing includes setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve one or more target etch process metrics. Furthermore, the GCIB etch processing utilizes Si-containing and/or Ge-containing etchants. Further yet, the GCIB etch processing facilitates etching Si-containing material, Ge-containing material, and metal-containing material. | 08-01-2013 |
20130082189 | PRE-ALIGNED MULTI-BEAM NOZZLE/SKIMMER MODULE - A pre-aligned multi-output nozzle/skimmer (PMNS) module includes a pre-aligned nozzle assembly having at least two nozzles and a pre-aligned skimmer subassembly. The PMNS module can be pre-aligned to more accurately position a Multi-Beam Gas Cluster Ion Beam (MBGCIB), and to more accurately control the formation of the multi-beam gas clusters of a pre-aligned MBGCIB. | 04-04-2013 |
20130075366 | SURFACE PROFILE ADJUSTMENT USING GAS CLUSTER ION BEAM PROCESSING - A method of treating a workpiece is described. The method comprises computing correction data from metrology data related to a workpiece surface profile, adjusting the surface profile in accordance with the correction data using a gas cluster ion beam (GCIB), and further adjusting the surface profile by performing an etching process following the GCIB adjustment. | 03-28-2013 |
20130059449 | GAS CLUSTER ION BEAM ETCH PROFILE CONTROL USING BEAM DIVERGENCE - A method of etching a substrate is described. In one embodiment, the method includes preparing a mask layer having a pattern formed therein on or above at least a portion of a substrate, etching a feature pattern into the substrate from the pattern in the mask layer using a gas cluster ion beam (GCIB), and controlling a sidewall profile of the feature pattern etched into the substrate by adjusting a beam divergence of the GCIB. | 03-07-2013 |
20130059446 | GAS CLUSTER ION BEAM ETCHING PROCESS FOR ACHIEVING TARGET ETCH PROCESS METRICS FOR MULTIPLE MATERIALS - A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the GCIB etch processing includes setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve one or more target etch process metrics. | 03-07-2013 |
20130059445 | GAS CLUSTER ION BEAM ETCHING PROCESS FOR Si-CONTAINING and Ge-CONTAINING MATERIALS - A method and system for performing gas cluster ion beam (GCIB) etch processing of Si-containing material and/or Ge-containing material is described. In particular, the GCIB etch processing includes forming a GCIB that contains a halogen element. | 03-07-2013 |
20130059444 | GAS CLUSTER ION BEAM ETCHING PROCESS FOR METAL-CONTAINING MATERIALS - A method and system for performing gas cluster ion beam (GCIB) etch processing of metal-containing material is described. In particular, the GCIB etch processing includes forming a GCIB that contains a halogen element. | 03-07-2013 |
20120252222 | GCIB PROCESS FOR REDUCING INTERFACIAL ROUGHNESS FOLLOWING PRE-AMORPHIZATION - A method for amorphizing a layer on a substrate is described. In one embodiment, the method includes treating the substrate with a first gas cluster ion beam (GCIB) using a first beam energy selected to yield an amorphous sub-layer within the substrate of a desired thickness, which produces a first interfacial roughness of an amorphous-crystal interface between the amorphous sub-layer and a crystalline sub-layer of the substrate. The method further includes treating the substrate with a second GCIB using a second beam energy, less than the first beam energy, to reduce the first interfacial roughness of the amorphous-crystal interface to a second interfacial roughness. | 10-04-2012 |
20120238092 | METHOD TO ALTER SILICIDE PROPERTIES USING GCIB TREATMENT - A method of manufacturing a semiconductor device is described. The method comprises performing a gas cluster ion beam (GCIB) pre-treatment and/or post-treatment of at least a portion of a silicon-containing substrate during formation of a silicide region. | 09-20-2012 |
20120225532 | METHOD FOR CONTROLLING A RESISTIVE PROPERTY IN A RESISTIVE ELEMENT USING A GAS CLUSTER ION BEAM - A method for controlling a resistive property or conductive property in a resistive element using a gas cluster ion beam (GCIB) is described. In one embodiment, the method may include controlling a resistive switching behavior in a resistive switching random-access memory device using a gas cluster ion beam (GCIB). | 09-06-2012 |
20120223249 | SCANNER FOR GCIB SYSTEM - Disclosed are an apparatus, system, and method for scanning a substrate or other workpiece through a gas-cluster ion beam (GCIB), or any other type of ion beam. The workpiece scanning apparatus is configured to receive and hold a substrate for irradiation by the GCIB and to scan it through the GCIB in two directions using two movements: a reciprocating fast-scan movement, and a slow-scan movement. The slow-scan movement is actuated using a servo motor and a belt drive system, the belt drive system being configured to reduce the failure rate of the workpiece scanning apparatus. | 09-06-2012 |
20110312106 | METHOD FOR PREPARING A LIGHT-EMITTING DEVICE USING GAS CLUSTER ION BEAM PROCESSING - A method of manufacturing semiconductor-based light-emitting devices, such as light-emitting diodes (LEDs), is described. The method comprises irradiating an interface region with a gas cluster ion beam (GCIB) to improve the interface region between a light-emitting device stack and the substrate, within the light-emitting device stack, and/or between the light-emitting device stack and a metal contact layer in an end-type contact. | 12-22-2011 |
20110272594 | GAS CLUSTER ION BEAM SYSTEM WITH RAPID GAS SWITCHING APPARATUS - A processing system is provided for irradiating a substrate with a gas cluster ion beam (GCIB). The system includes a nozzle for forming and emitting gas cluster beams through a nozzle outlet, and a stagnation chamber that is located upstream of and adjacent the nozzle. The stagnation chamber has an inlet, and the nozzle is configured to direct a single gas cluster beam toward the substrate. An ionizer is positioned downstream of the outlet and is configured to ionize the gas cluster beam to form the GCIB. The system also includes a gas supply that is in fluid communication with the inlet of the stagnation chamber, and which includes a gas source and a valve located between the gas source and the nozzle for controlling flow of a gas between the gas source and the nozzle. | 11-10-2011 |
20110272593 | GAS CLUSTER ION BEAM SYSTEM WITH CLEANING APPARATUS - A processing system is provided for irradiating a substrate with a gas cluster ion beam (GCIB). The system includes a vacuum vessel that has an interior and is configured to support the substrate therein, and at least one nozzle for forming and emitting a gas cluster beam. The at least one nozzle is configured to direct the gas cluster beam within the vacuum vessel toward the substrate. An ionizer is positioned to ionize the gas cluster beam to form the GCIB. A main gas supply of the system is in fluid communication with the at least one nozzle for supplying gas to the nozzle. The system also includes a plasma-generating apparatus that communicates with the interior of the vacuum vessel and which is configured to receive a cleaning gas and selectively emit plasma for cleaning the interior of the vacuum vessel. | 11-10-2011 |
20110266466 | METHOD FOR MODIFYING A MATERIAL LAYER USING GAS CLUSTER ION BEAM PROCESSING - A method of modifying a material layer on a substrate is described. The method comprises forming the material layer on the substrate. Thereafter, the method comprises establishing a gas cluster ion beam (GCIB) having an energy per atom ratio ranging from about 0.25 eV per atom to about 100 eV per atom, and modifying the material layer by exposing the material layer to the GCIB. | 11-03-2011 |
20110240602 | HIGH-VOLTAGE GAS CLUSTER ION BEAM (GCIB) PROCESSING SYSTEM - The invention includes a high-voltage gas cluster ion beam (GCIB) processing system for treating a workpiece using a gas cluster ion beam. The high-voltage GCIB processing system includes a high-voltage (HV) source system that includes a high-voltage (HV) source chamber having a high-voltage (HV) nozzle subassembly, a nozzle element, and a high-voltage (HV) skimmer subassembly therein. The high-voltage gas cluster ion beam (GCIB) processing system includes a high-voltage (HV) power supply coupled to the HV nozzle subassembly and the HV skimmer subassembly. A high-voltage (HV) ionization chamber can be coupled to the HV source chamber and can include an ionizer coupled to the chamber wall by an isolation structure. In addition, a grounded GCIB processing chamber can be coupled to the HV ionization chamber by an isolation structure and can include a scanable workpiece holder. | 10-06-2011 |
20110174770 | METHOD FOR MODIFYING AN ETCH RATE OF A MATERIAL LAYER USING ENERGETIC CHARGED PARTICLES - A method of etching a material layer on a substrate is described. In one embodiment, the method includes modifying an etch resistance of a material layer to a pre-determined etch process by doping the material layer using energetic charged particles, and etching the modified material layer using the pre-determined etch process. | 07-21-2011 |
20110117738 | METHOD TO ALTER SILICIDE PROPERTIES USING GCIB TREATMENT - A method of manufacturing a semiconductor device is described. The method comprises performing a gas cluster ion beam (GCIB) pre-treatment and/or post-treatment of at least a portion of a silicon-containing substrate during formation of a silicide region. | 05-19-2011 |
20110084216 | METHOD FOR TREATING NON-PLANAR STRUCTURES USING GAS CLUSTER ION BEAM PROCESSING - A method for treating a structure is described. One embodiment includes forming a structure on a substrate, wherein the structure has a plurality of surfaces including one or more first surfaces lying substantially parallel to a first plane parallel with said substrate and one or more second surfaces lying substantially perpendicular to the first plane. Additionally, the method comprises directing a gas cluster ion beam (GCIB) formed from a material source toward the substrate with a direction of incidence, and orienting the substrate relative to the direction of incidence. The method further comprises treating the one or more second surfaces. | 04-14-2011 |
20110084215 | METHOD AND SYSTEM FOR TILTING A SUBSTRATE DURING GAS CLUSTER ION BEAM PROCESSING - A method and system for treating a non-planar structure is described. The method includes forming a non-planar structure on a substrate. Additionally, the method includes generating a gas cluster ion beam (GCIB) formed from a material source for treatment of the non-planar structure, tilting the substrate relative to the GCIB, and irradiating the non-planar structure with the GCIB. The system includes a substrate tilt actuator coupled to a substrate holder and configured to tilt the substrate holder relative to a GCIB. | 04-14-2011 |
20110084214 | GAS CLUSTER ION BEAM PROCESSING METHOD FOR PREPARING AN ISOLATION LAYER IN NON-PLANAR GATE STRUCTURES - A gas cluster ion beam (GCIB) processing method for preparing an isolation layer in a non-planar gate structure is described. The method forms a non-planar gate structure on a substrate. Additionally, the GCIB processing method includes generating a GCIB formed from a material source for forming an isolation layer for the non-planar gate structure. Additionally yet, the GCIB processing method includes selecting a beam energy, a beam energy distribution, a beam focus, and a beam dose to achieve a desired thickness of the isolation layer, accelerating the GCIB to achieve the beam energy, focusing the GCIB to achieve the beam focus, and irradiating at least a portion of the substrate with the accelerated GCIB according to the beam dose. The GCIB processing method forms the isolation layer at a base surface adjacent a base of the non-planar gate structure using the GCIB to achieve the desired thickness. | 04-14-2011 |
20100243920 | METHOD FOR ENHANCING A SUBSTRATE USING GAS CLUSTER ION BEAM PROCESSING - A method of enhancing a material layer on a substrate is described. The method comprises establishing a gas cluster ion beam (GCIB), and treating a host region of the substrate by exposing the host region of the substrate to the GCIB. The treatment with the GCIB may selectively remove an undesirable specie and/or introduce a desirable specie to the host region. | 09-30-2010 |
20100243919 | METHOD FOR MODIFYING A MATERIAL LAYER USING GAS CLUSTER ION BEAM PROCESSING - A method of modifying a material layer on a substrate is described. The method comprises forming the material layer on the substrate. Thereafter, the method comprises establishing a gas cluster ion beam (GCIB) having an energy per atom ratio ranging from about 0.25 eV per atom to about 100 eV per atom, and modifying the material layer by exposing the material layer to the GCIB. | 09-30-2010 |
20100243913 | PRE-ALIGNED NOZZLE/SKIMMER - The pre-aligned nozzle/skimmer module includes an internal pre-aligned nozzle assembly and internal pre-aligned skimmer cartridge assembly to more accurately control the formation of the Gas Cluster Ion Beam (GCIB). The nozzle/skimmer module can be pre-aligned to more accurately position the GCIB. The pre-aligned nozzle/skimmer module more accurately controls the formation of the gas clusters of a pre-aligned Gas Cluster Ion Beam (GCIB). | 09-30-2010 |
20100227142 | ULTRA-THIN FILM FORMATION USING GAS CLUSTER ION BEAM PROCESSING - A method of preparing a thin film on a substrate is described. The method comprises forming an ultra-thin hermetic film over a portion of a substrate using a gas cluster ion beam (GCIB), wherein the ultra-thin hermetic film has a thickness less than approximately 5 nm. The method further comprises providing a substrate in a reduced-pressure environment, and generating a GCIB in the reduced-pressure environment from a pressurized gas mixture. A beam acceleration potential and a beam dose are selected to achieve a thickness of the thin film less than about 5 nanometers (nm). The GCIB is accelerated according to the beam acceleration potential, and the accelerated GCIB is irradiated onto at least a portion of the substrate according to the beam dose. By doing so, the thin film is formed on the at least a portion of the substrate to achieve the thickness desired. | 09-09-2010 |
20100221905 | MATERIAL INFUSION IN A TRAP LAYER STRUCTURE USING GAS CLUSTER ION BEAM PROCESSING - A method of preparing a floating trap type device on a substrate is described. The method comprises forming a trap layer structure on a substrate, and modifying a composition of one or more layers in the trap layer structure by exposing the trap layer structure to a gas cluster ion beam (GCIB). | 09-02-2010 |
20100209627 | METHOD FOR DEPOSITING HYDROGENATED DIAMOND-LIKE CARBON FILMS USING A GAS CLUSTER ION BEAM - A method for depositing a hydrogenated diamond-like carbon (H-DLC) film on a surface of a substrate. The method includes maintaining a reduced-pressure environment around a substrate holder for holding a substrate, holding the substrate securely within the reduced-pressure environment, and forming a gas cluster ion beam (GCIB) from a pressurized gas containing hydrocarbon gas and a carrier gas. The method further includes accelerating the GCIB to the reduced-pressure environment, irradiating the accelerated GCIB onto at least a portion of the surface of the substrate, and forming an H-DLC film on the surface. | 08-19-2010 |
20100200946 | Method for forming trench isolation using a gas cluster ion beam growth process - A method of forming shallow trench isolation on a substrate using a gas cluster ion beam (GCIB) is described. The method comprises generating a GCIB, and irradiating the substrate with the GCIB to form a shallow trench isolation structure by growing a dielectric layer in at least one region on the substrate. | 08-12-2010 |
20100200774 | MULTI-SEQUENCE FILM DEPOSITION AND GROWTH USING GAS CLUSTER ION BEAM PROCESSING - A method of forming a thin film on a substrate is described. The method comprises depositing a first material layer on a substrate using a first gas cluster ion beam (GCIB), the first material layer comprising a first atomic constituent, and growing a second material layer from at least a surface portion of the first material layer by introducing a second atomic constituent using a second GCIB, the second material layer comprising a reaction product of the first and second atomic constituents. | 08-12-2010 |
20100193898 | METHOD FOR FORMING TRENCH ISOLATION USING GAS CLUSTER ION BEAM PROCESSING - A method of forming shallow trench isolation on a substrate using a gas cluster ion beam (GCIB) is described. The method comprises generating a GCIB, and irradiating the substrate with the GCIB to form a shallow trench isolation structure by depositing a dielectric layer in at least one region on the substrate. | 08-05-2010 |
20100193708 | METHOD OF FORMING TRENCH ISOLATION USING A MULTIPLE NOZZLE GAS CLUSTER ION BEAM PROCESS - Disclosed are methods of operation to grow, modify, deposit, or dope a layer upon a substrate using a multi-nozzle and skimmer assembly for introducing a process gas mixture, or multiple process gases mixtures, in a gas cluster ion beam (GCIB) system. Also disclosed is a method of forming a shallow trench isolation (STI) structure on a substrate, for example, an SiO | 08-05-2010 |
20100193701 | MULTIPLE NOZZLE GAS CLUSTER ION BEAM SYSTEM - Disclosed is a multi-nozzle and skimmer assembly for introducing a process gas mixture, or multiple process gases mixtures, in a gas cluster ion beam (GCIB) system, and associated methods of operation to grow, modify, deposit, or dope a layer upon a substrate. The multiple nozzle and skimmer assembly includes at least two nozzles arranged in mutual close proximity to at least partially coalesce the gas cluster beams emitted therefrom into a single gas cluster beam and/or angled to converge each beam toward a single intersecting point to form a set of intersecting gas cluster beams, and to direct the single and/or intersecting gas cluster beam into a gas skimmer. | 08-05-2010 |
20100193472 | MULTIPLE NOZZLE GAS CLUSTER ION BEAM PROCESSING SYSTEM AND METHOD OF OPERATING - A gas cluster ion beam (GCIB) processing system using multiple nozzles for forming and emitting at least one GCIB and methods of operating thereof are described. The GCIB processing system may be configured to treat a substrate, including, but not limited to, doping, growing, depositing, etching, smoothing, amorphizing, or modifying a layer thereupon. Furthermore, the GCIB processing system may be operated to produce a first GCIB and a second GCIB, and to irradiate a substrate simultaneously and/or sequentially with the first GCIB and second GCIB. | 08-05-2010 |
20100182036 | ELECTROSTATIC CHUCK POWER SUPPLY - A detection circuit is provided for a power supply for an electrostatic chuck generating a trapezoidal waveform with approximately flat tops and minimal dead-time between phase reversals. The detection circuit includes an amplifying circuit which receives inputs from a secondary winding of a transformer of the power supply and produces an amplified buffered signal. A chucking detect circuit receives the signal from the amplifying circuit and is configured to produce a first signal indicative of a substrate on the electrostatic chuck and a second signal indicative of an electrostatic chuck without a substrate. A chucking quality circuit receives the signal from the amplifying circuit and produces a signal indicative of a quality of the chucking of the substrate. A movement detection circuit receives the signal from the amplifying circuit and produces a signal indicative of movement of the substrate on the electrostatic chuck. | 07-22-2010 |
20100072393 | SELF-BIASING ACTIVE LOAD CIRCUIT AND RELATED POWER SUPPLY FOR USE IN A CHARGED PARTICLE BEAM PROCESSING SYSTEM - A load circuit device having a self-biasing active load circuit, and a related high voltage power supply configured to bias an optical element in a charged particle beam processing system, such as a gas cluster ion beam (GCIB) processing system. The high voltage power supply comprises a variable voltage supply having a load terminal at a load potential and a reference terminal at a reference potential, and a self-biasing active load circuit connected between the load terminal and the reference terminal, and configured to sustain a variable voltage drop between the load potential and the reference potential while maintaining a substantially constant current. | 03-25-2010 |
20100072173 | SURFACE PROFILE ADJUSTMENT USING GAS CLUSTER ION BEAM PROCESSING - A method of treating a workpiece is described. The method comprises selectively forming a sacrificial material on one or more regions of a substrate or a layer on the substrate using a gas cluster ion beam (GCIB), and adjusting a surface profile of a surface on the substrate or the layer on the substrate by performing an etching process following the selective formation. | 03-25-2010 |
20100061033 | ELECTROSTATIC CHUCK POWER SUPPLY - A power supply is provided for an electrostatic chuck. A signal generating circuit of the power supply is configured to generate a square wave signal. An amplifying circuit is electrically connected to the square wave circuit and configured to amplify the square wave signal. A transformer has a primary and a secondary winding. The primary winding is electrically connected to the amplifying circuit and the secondary winding is configured to be electrically connected to the electrostatic chuck. The secondary winding produces a signal for the electrostatic chuck. A voltage divider circuit is electrically connected to the secondary winding and to the amplifying circuit. The voltage divider circuit is configured to reduce the voltage of the signal for the electrostatic chuck and feed back the reduced voltage signal to the amplifying circuit. The signal from the secondary winding is a trapezoidal waveform with approximately flat tops and minimal dead-time between phase reversals. | 03-11-2010 |
20100029078 | METHOD OF FORMING SEMICONDUCTOR DEVICES CONTAINING METAL CAP LAYERS - Embodiments of methods for improving electrical leakage performance and minimizing electromigration in semiconductor devices containing metal cap layers are generally described herein. According to one embodiment, a method of forming a semiconductor device includes planarizing a top surface of a workpiece to form a substantially planar surface with conductive paths and dielectric regions, forming metal cap layers on the conductive paths, and exposing the top surface of the workpiece to a dopant source from a gas cluster ion beam (GCIB) to form doped metal cap layers on the conductive paths and doped dielectric layers on the dielectric regions. According to some embodiments the metal cap layers and the doped metal cap layers contain a noble metal selected from Pt, Au, Ru, Rh, Ir, and Pd. | 02-04-2010 |
20100029071 | METHOD OF FORMING SEMICONDUCTOR DEVICES CONTAINING METAL CAP LAYERS - Embodiments of methods for improving electrical leakage performance and minimizing electromigration in semiconductor devices containing metal cap layers are generally described herein. According to one embodiment, a method of forming a semiconductor device includes planarizing a top surface of a workpiece to form a substantially planar surface with conductive paths and dielectric regions, forming metal cap layers on the conductive paths, and exposing the top surface of the workpiece to a dopant source from a gas cluster ion beam (GCIB) to form doped metal cap layers on the conductive paths and doped dielectric layers on the dielectric regions. According to some embodiments the metal cap layers and the doped metal cap layers contain a noble metal selected from Pt, Au, Ru, Rh, Ir, and Pd. | 02-04-2010 |
20100025365 | METHOD FOR SELECTIVELY ETCHING AREAS OF A SUBSTRATE USING A GAS CLUSTER ION BEAM - A method for selectively etching areas of a substrate is described. The method includes providing in a process chamber a substrate containing a first material having a film deposition surface and a second material having an etch surface. The method further includes forming a gas cluster ion beam (GCIB) from a pressurized gas containing a deposition-etch gas, and exposing the substrate to the GCIB to remove at least a portion of the second material from the etch surface and deposit a thin film on the film deposition surface of the first material. According to some embodiments, the deposition-etch gas may contain silicon (Si) and carbon (C), and it may possess a Si—C bond. | 02-04-2010 |
20090317564 | METHOD AND SYSTEM FOR GROWING A THIN FILM USING A GAS CLUSTER ION BEAM - A method of forming a thin film on a substrate is described. The method comprises providing a substrate in a reduced-pressure environment, and generating a gas cluster ion beam (GCIB) in the reduced-pressure environment from a pressurized gas mixture. A beam acceleration potential and a beam dose are set to achieve a thickness of the thin film ranging up to about 300 angstroms and to achieve a surface roughness of an upper surface of the thin film that is less than about 20 angstroms. The GCIB is accelerated according to the beam acceleration potential, and the accelerated GCIB is irradiated onto at least a portion of the substrate according to the beam dose. By doing so, the thin film is grown on the at least a portion of the substrate to achieve the thickness and the surface roughness. | 12-24-2009 |
20090314963 | METHOD FOR FORMING TRENCH ISOLATION - A method for treating a dielectric material using a gas cluster ion beam (GCIB) is described, and more particularly, a method for infusing material into a dielectric layer using a GCIB is described. The method comprises: filling a trench at least partially with a dielectric material; generating a GCIB; and irradiating the dielectric material with the GCIB to introduce one or more species into the dielectric material to a pre-determined depth. | 12-24-2009 |
20090314954 | METHOD AND SYSTEM FOR DIRECTIONAL GROWTH USING A GAS CLUSTER ION BEAM - A method for growing material on a substrate is described. The method comprises directionally growing a thin film on one or more surfaces of a substrate using a gas cluster ion beam (GCIB) formed from a source of precursor for the thin film, wherein the growth occurs on surfaces oriented substantially perpendicular to the direction of incidence of the GCIB, and growth is substantially avoided on surfaces oriented substantially parallel to the direction of incidence. | 12-24-2009 |
20090233004 | METHOD AND SYSTEM FOR DEPOSITING SILICON CARBIDE FILM USING A GAS CLUSTER ION BEAM - A method for depositing material on a substrate is described. The method comprises maintaining a reduced-pressure environment around a substrate holder for holding a substrate having a surface, and holding the substrate securely within the reduced-pressure environment. Additionally, the method comprises forming a gas cluster ion beam (GCIB) from a pressurized gas comprising a compound having silicon (Si) and carbon (C), accelerating the GCIB to the reduced-pressure environment, and irradiating the accelerated GCIB onto at least a portion of the surface of the substrate to form a thin film containing silicon and carbon, wherein the carbon content is greater than or equal to about 10%. Further the compound may possess a Si—C bond. | 09-17-2009 |
20090191696 | METHOD FOR INCREASING THE PENETRATION DEPTH OF MATERIAL INFUSION IN A SUBSTRATE USING A GAS CLUSTER ION BEAM - A method for infusing material below the surface of a substrate is described. The method comprises modifying a surface condition of a surface on a substrate to produce a modified surface layer, and thereafter, infusing material into the modified surface in the substrate by exposing the substrate to a gas cluster ion beam (GCIB) comprising the material. | 07-30-2009 |
20090186482 | METHOD OF FORMING CAPPING STRUCTURES ON ONE OR MORE MATERIAL LAYER SURFACES - Methods of forming capping structures on one or more different material surfaces are provided. One embodiment includes disposing a semiconductor structure in a reduced pressure chamber, forming a capping GCIB within the reduced pressure chamber, and directing the capping GCIB onto at least one of the one or more different material surfaces, so as to form at least one capping structure on the one or more surfaces onto which the capping GCIB is directed. | 07-23-2009 |
20090140165 | Method and apparatus for controlling a gas cluster ion beam formed from a gas mixture - Methods and apparatus for controlling a gas cluster ion beam formed from a plurality of process gases in a gas mixture. The methods and apparatus involve measuring gas analysis data relating to the composition of the gas mixture and modifying the irradiation of the workpiece in response to the detected parameter. The gas analysis data can be derived from samples of the composition of the gas mixture flowing from a gas source to the gas cluster ion beam apparatus or samples of the residual gases inside the vacuum vessel of the gas cluster ion beam apparatus. | 06-04-2009 |
20090130861 | DUAL DAMASCENE INTEGRATION STRUCTURES AND METHOD OF FORMING IMPROVED DUAL DAMASCENE INTEGRATION STRUCTURES - Methods of densifying a porous ultra-low-k (ULK) dielectric material by using gas-cluster ion-beam processing are disclosed. Methods for gas-cluster ion-beam etching, densification, pore sealing and ashing are described that allow simultaneous removal of material and densification of the ULK interfaces. A novel ULK dual damascene structure is disclosed with densified interfaces and no hard-masks. | 05-21-2009 |
20090104754 | METHOD TO IMPROVE ELECTRICAL LEAKAGE PERFORMANCE AND TO MINIMIZE ELECTROMIGRATION IN SEMICONDUCTOR DEVICES - Embodiments of methods for improving electrical leakage performance and minimizing electromigration in semiconductor devices are generally described herein. Other embodiments may be described and claimed. | 04-23-2009 |
20090087969 | METHOD TO IMPROVE A COPPER/DIELECTRIC INTERFACE IN SEMICONDUCTOR DEVICES - Embodiments of methods for improving a copper/dielectric interface in semiconductor devices are generally described herein. Other embodiments may be described and claimed. | 04-02-2009 |
20090087579 | METHOD FOR DIRECTIONAL DEPOSITION USING A GAS CLUSTER ION BEAM - A method for depositing material on a substrate is described. The method comprises directionally depositing a thin film on one or more surfaces of a substrate using a gas cluster ion beam (GCIB) formed from a source of precursor to the thin film, wherein the deposition occurs on surfaces oriented substantially perpendicular to the direction of incidence of the GCIB, and deposition is substantially avoided on surfaces oriented substantially parallel to the direction of incidence. | 04-02-2009 |
20090087578 | METHOD FOR DEPOSITING FILMS USING GAS CLUSTER ION BEAM PROCESSING - A method for depositing material on a substrate is described. The method comprises maintaining a reduced-pressure environment around a substrate holder for holding a substrate having a surface, and holding the substrate securely within the reduced-pressure environment. Additionally, the method comprises providing to the reduced-pressure environment a gas cluster ion beam (GCIB) from a pressurized gas mixture, accelerating the GCIB, and irradiating the accelerated GCIB onto at least a portion of the surface of the substrate to form a thin film. In one embodiment, the pressurized gas mixture comprises a silicon-containing specie and at least one of a nitrogen-containing specie or a carbon-containing specie for forming a thin film containing silicon and at least one of nitrogen or carbon. In another embodiment, the gas mixture comprises a metal-containing specie for forming a thin metal-containing film. In yet another embodiment, the pressurized gas mixture comprises a fluorocarbon-containing specie for forming a thin fluorocarbon-containing film. | 04-02-2009 |
20090087577 | METHOD TO IMPROVE ELECTRICAL LEAKAGE PERFORMANCE AND TO MINIMIZE ELECTROMIGRATION IN SEMICONDUCTOR DEVICES - Embodiments of methods for improving electrical leakage performance and minimizing electromigration in semiconductor devices are generally described herein. Other embodiments may be described and claimed. | 04-02-2009 |
20090084977 | METHOD AND DEVICE FOR ADJUSTING A BEAM PROPERTY IN A GAS CLUSTER ION BEAM SYSTEM - A method and device for adjusting a beam property, such as a beam size, a beam shape or a beam divergence angle, in a gas cluster beam prior to ionization of the gas cluster beam is described. A gas cluster ion beam (GCIB) source is provided, comprising a nozzle assembly having a gas source, a stagnation chamber and a nozzle that is configured to introduce under high pressure one or more gases through the nozzle to a vacuum vessel in order to produce a gas cluster beam. Additionally, the GCIB source comprises a gas skimmer positioned downstream from the nozzle assembly that is configured to reduce the number of energetic, smaller particles in the gas cluster beam. Furthermore, the GCIB source comprises a beam adjustment device positioned downstream from the gas skimmer that is configured to adjust at least one beam property of the gas cluster beam, and an ionizer positioned downstream from the beam adjustment device that is configured to ionize the gas cluster beam to produce a GCIB. | 04-02-2009 |
20090084759 | METHOD AND SYSTEM FOR MULTI-PASS CORRECTION OF SUBSTRATE DEFECTS - A method and system of location specific processing on a substrate is described. The method comprises acquiring metrology data for a substrate, and computing correction data for adjusting a first region of the metrology data on the substrate. Thereafter, a first gas cluster ion beam (GCIB) for treating the high gradient regions is established, and the first GCIB is applied to the substrate according to the correction data. The method further comprises optionally acquiring second metrology data following the applying of the first GCIB, and computing second correction data for adjusting a second region of the metrology data, or the second metrology data, or both on the substrate. Thereafter, a second gas cluster ion beam (GCIB) for treating the second region is established, and the second GCIB is applied to the substrate according to the second correction data. | 04-02-2009 |
20090084672 | METHOD AND SYSTEM FOR ADJUSTING BEAM DIMENSION FOR HIGH-GRADIENT LOCATION SPECIFIC PROCESSING - A method and system of location specific processing on a substrate is described. The method comprises establishing a gas cluster ion beam (GCIB) according to a set of beam properties and measuring metrology data for a substrate. Thereafter, the method comprises determining at least one spatial gradient of the metrology data at one or more locations on the substrate and adjusting at least one beam property in the set of beam properties for the GCIB according to the determined at least one spatial gradient. Using the metrology data and the adjusted set of beam properties, correction data for the substrate is computed. Following the computing, the adjusted GCIB is applied to the substrate according to the correction data. | 04-02-2009 |
20080245974 | METHOD OF INTRODUCING MATERIAL INTO A SUBSTRATE BY GAS-CLUSTER ION BEAM IRRADIATION - Method of infusing or introducing material into a substrate using a gas cluster ion beam. The method includes maintaining a reduced-pressure environment around a substrate holder and holding a substrate securely within that reduced-pressure environment. A gas-cluster ion beam formed from a pressurized gas mixture including an inert gas and at least one other atomic or molecular specie is provided to the reduced-pressure environment and accelerated. In one embodiment, the method includes irradiating the accelerated gas-cluster ion beam onto one or more surface portions of the substrate to form an infused region or gas-cluster ion-impact region therein by introducing part or all of the atomic or molecular specie into the surface. In another embodiment, the method includes modifying at least one electrical property of the surface of the substrate by irradiating the accelerated gas-cluster ion beam onto one or more surface portions of the substrate. | 10-09-2008 |