| STMICROELECTRONICS S.R.L. Patent applications |
| Patent application number | Title | Published |
|---|
| 20220293498 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND CORRESPONDING SEMICONDUCTOR DEVICE - A semiconductor device, such as a Quad-Flat No-lead (QFN) package, includes a semiconductor chip arranged on a die pad of a leadframe. The leadframe has an array of electrically-conductive leads around the die pad. The leads in the array have distal ends facing away from the die pad as well as recessed portions at an upper surface of the leads. Resilient material, such as low elasticity modulus material, is present at the upper surface of the leads and filling the recessed portions. An insulating encapsulation is molded onto the semiconductor chip. The resilient material is sandwiched between the insulating encapsulation and the distal ends of the leads. This resilient material facilitates flexibility of the leads, making them suited for reliable soldering to an insulated metal substrate. | 09-15-2022 |
| 20220277536 | INTEGRATED ELECTRONIC MODULE FOR 3D SENSING APPLICATIONS, AND 3D SCANNING DEVICE INCLUDING THE INTEGRATED ELECTRONIC MODULE - A method of manufacturing an electronic module includes providing a base substrate having a first surface, providing a first supporting element having a first portion with an inclined top surface, and affixing the first supporting element to the first surface such that the inclined top surface is inclined with respect to the base substrate. A first reflector is coupled to the inclined top surface such that a rear surface of the first reflector is in physical contact with the inclined top surface of the first portion of the first supporting element, and a spacer structure is configured to form an interface for mounting lateral walls to the base substrate. A cap is positioned over and supported by the lateral walls to thereby define a chamber. The emitter, as well as a detector, are coupled to the first surface of the base substrate. | 09-01-2022 |
| 20220271740 | MULTI-LEVEL PULSER CIRCUIT AND METHOD OF OPERATING A MULTI-LEVEL PULSER CIRCUIT - A multi-level pulser circuit comprises a set of first input pins for receiving respective positive voltage signals at different voltage levels, a set of second input pins for receiving respective negative voltage signals at different voltage levels, and a reference input pin configured to receive a reference voltage signal intermediate the positive voltage signals and the negative voltage signals. The circuit comprises an output pin configured to supply a pulsed output signal. The circuit further comprises control circuitry configured to selectively couple the output pin to one of the first input pins, the second input pins and the reference input pin to generate the pulsed output signal at the output pin. The control circuitry is further configured to selectively couple at least one of the second input pins and the reference input pin to the output pin during falling transitions of the pulsed output signal between two positive voltage levels, and selectively couple at least one of the first input pins and the reference input pin to the output pin during rising transitions of the pulsed output signal between two negative voltage levels. | 08-25-2022 |
| 20220270593 | VOICE ACTIVITY DETECTION WITH LOW-POWER ACCELEROMETER - The present disclosure is directed to a device and method for detecting presence or absence of human speech. The device and method utilize a low-power accelerometer. The device and method generate an acceleration signal using the accelerometer, filter the acceleration signal with a band pass filter or a high pass filter, determine at least one calculation of the filtered acceleration signal, detect a presence or absence of a voice based on the at least one calculation, and output a detection signal that indicates the presence or absence of the voice. The device and method are well suited for portable audio devices, such as true wireless stereo headphones, that have a limited power supply. | 08-25-2022 |
| 20220269627 | INTERRUPT MANAGEMENT SYSTEM AND METHOD IN A DIGITAL COMMUNICATION INTERFACE - In a digital communication system, a master device and a number of slave devices are coupled in communication with the master device over a shared data communication bus. A selection line for each one of the slave devices couples the master device with a respective slave device and is dedicated to selection by the master device of the respective slave device for communication over the shared data communication bus. Each of the slave devices is able to send an interrupt request to the master device over the respective selection line to be served by the master device initiating a communication over the shared data communication bus, each selection line thereby being a bidirectional communication line between the respective slave device and the master device. | 08-25-2022 |
| 20220269410 | TAGGED MEMORY OPERATED AT LOWER VMIN IN ERROR TOLERANT SYSTEM - A memory array arranged as a plurality of memory cells. The memory cells are configured to operate at a determined voltage. A memory management circuitry coupled to the plurality of memory cells tags a first set of the plurality of memory cells as low-voltage cells and tags a second set of the plurality of memory cells as high-voltage cells. A power source provides a low voltage to the first set of memory cells and provides a high voltage to the second set of memory cells based on the tags. | 08-25-2022 |
| 20220263509 | SYSTEM AND METHOD FOR SELECTING AN OPERATING MODE, SUCH AS A BOOT MODE, OF A MICRO-CONTROLLER UNIT - A microcontroller includes an input pin and internal pull-up and pull-down circuits. External pull-up and pull-down circuits are also coupled to the input pin. The microcontroller is operable according to different configuration modes which include configuring the input pin in a floating state. A control logic then configures the internal pull-up and pull-down circuits according to an internal pull-up mode to acquire a first input voltage signal (at a first logic value) from the input pin, and further configure the internal pull-up and pull-down circuits according to an internal pull-down mode to acquire a second input voltage signal (at a second logic value) from the input pin. A selection of the operating mode of the MCU is then made based on the acquired first and second logic values. | 08-18-2022 |
| 20220263499 | SCAN CHAIN CIRCUIT AND CORRESPONDING METHOD - The disclosure relates to a scan chain circuit comprising cascaded flip-flops having a functional input node and a test input node configured to be selectively coupled to logic circuitry at a clock edge time. A clock line is provided configured to distribute one or more clock signals to the flip-flops in the chain, wherein the flip-flops in the chain have active clock edges applied thereto at respective clock edge times. The chain of flip-flops comprise a set of flip-flops configured to receive an edge inversion signal and to selectively invert their active clock edges in response to the edge inversion signal being asserted. | 08-18-2022 |
| 20220263481 | MULTI-STAGE AMPLIFIER CIRCUITS AND METHODS - A circuit for startup of a multi-stage amplifier circuit includes a pair of input nodes and at least two output nodes configured to be coupled to a multi-stage amplifier circuit. A startup differential stage includes a differential pair of transistors having respective control terminals coupled to the pair of input nodes, and each transistor in the differential pair of transistors has a respective current path therethrough between a respective output node and a common source terminal. The startup differential stage is configured to sense a common mode voltage drop at a first differential stage of the multi-stage amplifier circuit. Current mirror circuitry includes a plurality of transistors coupled to the common terminal of the differential pair of transistors and coupled to two output nodes of the at least two output nodes. | 08-18-2022 |
| 20220263412 | CONTROL CIRCUIT FOR CONTROLLING A SWITCHING STAGE OF AN ELECTRONIC CONVERTER, CORRESPONDING ELECTRONIC CONVERTER DEVICE AND METHOD - A control circuit operates to control a switching stage of an electronic converter. The control circuit includes: first terminals providing drive signals to electronic switches of the switching stage; a second terminal receiving from a feedback circuit a first feedback signal proportional to a converter output voltage; and a third terminal configured to receive from a current sensor a second feedback signal proportional to an inductor current. A driver circuit provides the drive signals as a function of a PWM signal generated by a generator circuit as a function of the first and second feedback signals, a reference voltage and a slope compensation signal. A mode selection signal is generated as a function of a comparison between the input voltage and the output voltage. A feed-forward compensation circuit is configured to source and/or sink a compensation current as a function of a variation in the mode selection signal. | 08-18-2022 |
| 20220262913 | VERTICAL-CONDUCTION SILICON CARBIDE MOSFET DEVICE HAVING IMPROVED GATE BIASING STRUCTURE AND MANUFACTURING PROCESS THEREOF - A vertical-conduction MOSFET device formed in a body of silicon carbide having a first and a second face and a peripheral zone. A drain region, of a first conductivity type, extends in the body between the two faces. A body region, of a second conductivity type, extends in the body from the first face, and a source region, having the first conductivity type, extends to the inside of the body region from the first face of the body. An insulated gate region extends on the first face of the body and comprises a gate conductive region. An annular connection region, of conductive material, is formed within a surface edge structure extending on the first face of the body, in the peripheral zone. The gate conductive region and the annular connection region are formed by a silicon layer and by a metal silicide layer overlying the silicon layer. | 08-18-2022 |
| 20220255428 | REGULATOR CIRCUIT, CORRESPONDING SYSTEM AND METHOD - A circuit includes an electronic switch configured to be coupled intermediate a high-voltage node and low-voltage circuitry and configured to couple the low-voltage circuitry to the high-voltage node. A voltage-sensing node is configured to be coupled to the high-voltage node via a pull-up resistor. A further electronic switch can be switched to a conductive state to couple the voltage-sensing node and the control node of the electronic switch. A comparator compares a threshold with a voltage at the voltage-sensing node and causes the further electronic switch to switch on in response to the voltage at said voltage-sensing node reaching said threshold. A charge pump coupled to the current flow-path of the electronic switch is activated to the conductive state to pump electric charge from the current flow-path of the electronic switch to the control node of the electronic switch via the further electronic switch switched to the conductive state. | 08-11-2022 |
| 20220246832 | MEMS PIEZOELECTRIC DEVICE AND CORRESPONDING MANUFACTURING PROCESS - A MEMS piezoelectric device includes a monolithic semiconductor body having first and second main surfaces extending parallel to a horizontal plane formed by first and second horizontal axes. A housing cavity is arranged within the monolithic semiconductor body. A membrane is suspended above the housing cavity at the first main surface. A piezoelectric material layer is arranged above a first surface of the membrane with a proof mass coupled to a second surface, opposite to the first surface, along the vertical axis. An electrode arrangement is provided in contact with the piezoelectric material layer. The proof mass causes deformation of the piezoelectric material layer in response to environmental mechanical vibrations. The proof mass is coupled to the membrane by a connection element arranged, in a central position, between the membrane and the proof mass in the direction of the vertical axis. | 08-04-2022 |
| 20220246771 | VERTICAL CONDUCTION ELECTRONIC DEVICE COMPRISING A JBS DIODE AND MANUFACTURING PROCESS THEREOF - A vertical conduction electronic device is formed by a body of wide-bandgap semiconductor material having a first conductivity type and a surface, which defines a first direction and a second direction. The body has a drift region. The electronic device includes a plurality of superficial implanted regions having a second conductivity type, which extend in the drift region from the surface and delimit between them, in the drift region, at least one superficial portion facing the surface. At least one deep implanted region has the second conductivity type, and extends in the drift region, at a distance from the surface of the body. A metal region extends on the surface of the body, in Schottky contact with the superficial portion of the drift region. | 08-04-2022 |
| 20220246770 | JBS DEVICE WITH IMPROVED ELECTRICAL PERFORMANCES, AND MANUFACTURING PROCESS OF THE JBS DEVICE - A Junction Barrier Schottky device includes a semiconductor body of SiC having a first conductivity. An implanted region having a second conductivity, extends into the semiconductor body from a top surface of the semiconductor body to form a junction barrier diode with the semiconductor body. An electrical terminal is in ohmic contact with the implanted region and in direct electrical contact with the top surface, laterally to the implanted region, to form a Schottky diode with the semiconductor body. The implanted region is formed by a first and a second portion electrically connected directly to each other and aligned along an alignment axis transverse to the top surface. Orthogonally to the alignment axis, the first portion has a first maximum width and the second portion has a second maximum width greater than the first maximum width. | 08-04-2022 |
| 20220246735 | BACK SIDE CONTACT STRUCTURE FOR A SEMICONDUCTOR DEVICE AND CORRESPONDING MANUFACTURING PROCESS - Various embodiments provide a vertical-conduction semiconductor device that includes: a silicon substrate having a front face and a rear face; a front-side structure arranged on the front face of the substrate, having at least one current-conduction region at the front face; and a back side metal structure, arranged on the rear face of the substrate, in electrical contact with the substrate and constituted by a stack of metal layers. The back side metal structure is formed by: a first metal layer; a silicide region, interposed between the rear face of the substrate and the first metal layer and in electrical contact with the aforesaid rear face; and a second metal layer arranged on the first metal layer. | 08-04-2022 |
| 20220246729 | SILICON CARBIDE VERTICAL CONDUCTION MOSFET DEVICE AND MANUFACTURING PROCESS THEREOF - A vertical conduction MOSFET device includes a body of silicon carbide, which has a first type of conductivity and a face. A superficial body region of a second type of conductivity has a first doping level and extends into the body to a first depth , and has a first width. A source region of the first type of conductivity extends into the superficial body region to a second depth, and has a second width. The second depth is smaller than the first depth and the second width is smaller than the first width. A deep body region of the second type of conductivity has a second doping level and extends into the body, at a distance from the face of the body and in direct electrical contact with the superficial body region, and the second doping level is higher than the first doping level. | 08-04-2022 |
| 20220246723 | SILICON CARBIDE VERTICAL CONDUCTION MOSFET DEVICE FOR POWER APPLICATIONS AND MANUFACTURING PROCESS THEREOF - A vertical conduction MOSFET device includes a body of silicon carbide having a first conductivity type and a face. A metallization region extends on the face of the body. A body region of a second conductivity type extends in the body, from the face of the body, along a first direction parallel to the face and along a second direction transverse to the face. A source region of the first conductivity type extends towards the inside of the body region, from the face of the body. The source region has a first portion and a second portion. The first portion has a first doping level and extends in direct electrical contact with the metallization region. The second portion has a second doping level and extends in direct electrical contact with the first portion of the source region. The second doping level is lower than the first doping level. | 08-04-2022 |
| 20220238738 | SILICON CARBIDE ULTRAVIOLET LIGHT PHOTODETECTOR AND MANUFACTURING PROCESS THEREOF - The photodetector is formed in a silicon carbide body formed by a first epitaxial layer of an N type and a second epitaxial layer of a P type. The first and second epitaxial layers are arranged on each other and form a body surface including a projecting portion, a sloped lateral portion, and an edge portion. An insulating edge region extends over the sloped lateral portion and the edge portion. An anode region is formed by the second epitaxial layer and is delimited by the projecting portion and by the sloped lateral portion. The first epitaxial layer forms a cathode region underneath the anode region. A buried region of an N type, with a higher doping level than the first epitaxial layer, extends between the anode and cathode regions, underneath the projecting portion, at a distance from the sloped lateral portion as well as from the edge region. | 07-28-2022 |
| 20220238603 | SWITCHING CELL - An electronic cell includes an integrated stack of structures including, successively: a first electrode; an ovonic threshold switch layer below the first electrode; and a fixed resistor below the ovonic threshold switch layer. A second electrode may be included between fixed resistor and the ovonic threshold switch layer. A memory layer, for example a phase change material layer, a resistive random-access memory layer or a magneto-resistive random-access memory layer, may be included between the first electrode and the ovonic threshold switch layer. | 07-28-2022 |
| 20220238485 | PACKAGED ELECTRONIC SYSTEM FORMED BY ELECTRICALLY CONNECTED AND GALVANICALLY ISOLATED DICE - A packaged electronic system having a support formed by an insulating organic substrate housing a buried conductive region that is floating. A first die is fixed to the support and carries, on a first main surface, a first die contact region capacitively coupled to a first portion of the buried conductive region. A second die is fixed to the support and carries, on a first main surface, a second die contact region capacitively coupled to a second portion of the buried conductive region. A packaging mass encloses the first die, the second die, the first die contact region, the second die contact region, and, at least partially, the support. | 07-28-2022 |
| 20220238473 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND CORRESPONDING SEMICONDUCTOR DEVICE - A semiconductor chip includes an electrical contact layer covered by a passivation layer. The semiconductor chip is encapsulated in an encapsulation formed by laser-direct-structuring (LDS) material. Laser beam energy is applied to the encapsulation to structure therein a through via passing through the encapsulation and removing the passivation layer at a bonding site of the electrical contact layer of the at least one semiconductor chip. The through via structured in the encapsulation is made electrically conductive so that the electrically-conductive through via is electrically coupled to, optionally in direct contact with, the electrical contact layer at a bonding site where the passivation layer has been removed. | 07-28-2022 |
| 20220238405 | SEMICONDUCTOR DEVICE AND CORRESPONDING MANUFACTURING METHOD - An antenna-in-package semiconductor device includes a semiconductor chip coupled to a planar substrate. An encapsulation body encapsulates the semiconductor chip. The encapsulation body includes a through cavity extending to the planar substrate. A rectilinear wire antenna is mounted within the through cavity and extends, for instance from the planar substrate, along an axis that is transverse to a surface of the planar substrate to which the semiconductor chip is coupled. The rectilinear wire antenna is electrically coupled to the semiconductor chip. An insulating material fills the cavity to encapsulated the rectilinear wire antenna. | 07-28-2022 |
| 20220236059 | AUTOMATICALLY RECONFIGURABLE INTERFACE ELECTRONIC CIRCUIT AND SENSOR INCLUDING THE INTERFACE ELECTRONIC CIRCUIT AND A MEMS TRANSDUCER - An interface electronic circuit couplable to a first transducer that generates a first analog signal indicative of a first quantity and to a microcontroller unit, the interface electronic circuit including: a first conversion stage, which generates a first digital signal as a function of the first analog signal; a DSP stage, which includes at least one DSP unit and generates a processed signal as a function of the first digital signal; an advanced-processing stage, which detects, by execution of a processing of the processed signal, the occurrence of an target condition regarding the first quantity; and a number of registers, which store values of configuration parameters. The advanced-processing stage writes at least one subset of the registers, after detecting the occurrence of the target condition, so as to vary the values of the configuration parameters stored in the subset of registers. | 07-28-2022 |
| 20220229287 | RESONANT MEMS DEVICE HAVING A TILTABLE, PIEZOELECTRICALLY CONTROLLED MICROMIRROR - Disclosed herein is a method of making a microelectromechanical (MEMS) device. The method includes, in a single structural layer, affixing a tiltable structure to an anchorage portion with first and second supporting arms extending between the anchorage portion and opposite sides of the tiltable structure, and forming first and second resonant piezoelectric actuation structures extending between a constraint portion of the first supporting arm and the anchorage portion, on opposite sides of the first supporting arm. The method further includes coupling a handling wafer underneath the structural layer to define a cavity therebetween, and forming a passivation layer over the structural layer, the passivation layer having contact openings defined therein for routing metal regions for electrical coupling to respective electrical contact pads, the electrical contact pads being electrically connected to the first and second resonant piezoelectric actuation structures. | 07-21-2022 |
| 20220225003 | DEVICE AND METHOD FOR DETECTING A CHANGE IN OPERATING ENVIRONMENT FOR AN ELECTRONIC APPARATUS - A detection device includes a pressure sensor, which provides a pressure signal indicative of an ambient pressure in an operating environment. An electrostatic-charge-variation sensor provides a charge-variation signal indicative of a variation of electrostatic charge associated with the operating environment, and processing circuitry is coupled to the pressure sensor and to the electrostatic-charge-variation sensor so as to receive the pressure signal and the charge-variation signal, and jointly processes the pressure signal and the charge-variation signal for detecting a variation between a first operating environment and a second operating environment for the detection device. The second operating environment is different from the first operating environment. | 07-14-2022 |
| 20220216789 | DC-DC CONVERTER APPARATUS WITH TIME-BASED CONTROL LOOP AND CORRESPONDING CONTROL METHOD, AND COMPUTER PROGRAM PRODUCT - A time based boost DC-DC converter generates an output voltage using an inductor. A voltage error between the output voltage and a reference voltage is determined and processed in a) an integral control branch which converts the voltage error into an integral control current signal used to control a current controlled oscillator, and b) a proportional branch which converts the voltage error into a proportional control current signal used to control signal a delay line. Current flowing in the inductor is sensed, attenuated and used to apply adjustment to the integral and proportional control current signals. The output from the current controlled oscillator is passed through the delay line and phase detected in order to generate pulse width modulation (PWM) control signaling driving switch operation in the converter. | 07-07-2022 |
| 20220216333 | HEMT TRANSISTOR WITH ADJUSTED GATE-SOURCE DISTANCE, AND MANUFACTURING METHOD THEREOF - An HEMT includes: a heterostructure; a dielectric layer on the heterostructure; a gate electrode, which extends throughout the thickness of the dielectric layer; a source electrode; and a drain electrode. The dielectric layer extends between the gate electrode and the drain electrode and is absent between the gate electrode and the source electrode. In this way, the distance between the gate electrode and the source electrode can be designed in the absence of constraints due to a field plate that extends towards the source electrode. | 07-07-2022 |
| 20220214430 | ELECTRONIC MODULE FOR GENERATING LIGHT PULSES FOR LIDAR APPLICATIONS AND METHOD FOR MANUFACTURING THE ELECTRONIC MODULE - An electronic module for generating light pulses includes an electronic card or interposer, a LASER-diode lighting module, and a LASER-diode driver module. The interposer has an edge recess in which the lighting module is completely inserted. The driver module is arranged on top of the interposer and the lighting module. The electrical connections for driving the LASER diodes are obtained without resorting to wire bonding in order to reduce the parasitic inductances. | 07-07-2022 |
| 20220214384 | INVERTER AND METHOD FOR MEASURING PHASE CURRENTS IN AN ELECTRIC MACHINE - A three-phase load is powered by a PWM (e.g., SVPWM) driven DC-AC inverter having a single shunt-topology. A shunt voltage and a branch voltage of the inverter (across a transistor to be calibrated) are measured during a second period of each SVPWM sector, and the drain-to-source resistance of the calibrated transistor is calculated. During the fourth period of each SVPWM sector, the branch voltage is measured again, and another branch voltage across another transistor is measured. Using the drain-to-source resistance of the calibrated transistor and the voltage across the calibrated transistor measured during the fourth period, the phase current through the calibrated transistor is calculated. Using the other branch voltage measured during the fourth period and the drain-to-source resistance of its corresponding transistor (known from a prior SVPWM sector), the phase current through that transistor is calculated. From the two calculated phase currents, the other phase current can be calculated. | 07-07-2022 |
| 20220209763 | PULSE WIDTH MODULATION DECODER CIRCUIT, CORRESPONDING DEVICE AND METHODS OF OPERATION - A circuit for decoding a pulse width modulated (PWM) signal generates an output signal switching between a first and second logic values as a function of a duty-cycle of the PWM signal. Current generating circuitry receives the PWM signal and injects a current to and sinks a current from an intermediate node as a function of the values of the PWM signal. A capacitor coupled to the intermediate node is alternatively charged and discharged by the injected and sunk currents, respectively, to generate a voltage. A comparator circuit coupled to the intermediate node compares the generated voltage to a comparison voltage and drives the logic values of the output signal as a function of the comparison. | 06-30-2022 |
| 20220208995 | SPLIT-GATE TRENCH MOS TRANSISTOR WITH SELF-ALIGNMENT OF GATE AND BODY REGIONS - A process is proposed for manufacturing an integrated device having at least one MOS transistor integrated on a die of semiconductor material. The process includes forming one or more gate trenches with corresponding field plates and gate regions. A body region is formed by implanting dopants selectively along one or more implantation directions that are tilted with respect to a front surface of the die. Moreover, a corresponding integrated device and a system comprising this integrated device are proposed. | 06-30-2022 |
| 20220208977 | SILICON CARBIDE-BASED ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME - An electronic device comprising: a semiconductor body of silicon carbide, SiC, having a first and a second face, opposite to one another along a first direction, which presents positive-charge carriers at said first face that form a positive interface charge; a first conduction terminal, which extends at the first face of the semiconductor body; a second conduction terminal, which extends on the second face of the semiconductor body; a channel region in the semiconductor body, configured to house, in use, a flow of electrons between the first conduction terminal and the second conduction terminal; and a trapping layer, of insulating material, which extends in electrical contact with the semiconductor body at said channel region and is designed so as to present electron-trapping states that generate a negative charge such as to balance, at least in part, said positive interface charge. | 06-30-2022 |
| 20220208961 | SILICON CARBIDE MOSFET TRANSISTOR DEVICE WITH IMPROVED CHARACTERISTICS AND CORRESPONDING MANUFACTURING PROCESS - A MOSFET transistor device includes a functional layer of silicon carbide, having a first conductivity type. Gate structures are formed on a top surface of the functional layer and each includes a dielectric region and an electrode region. Body wells having a second conductivity type are formed within the functional layer, and the body wells are separated from one another by surface-separation regions. Source regions having the first conductivity type are formed within the body wells, laterally and partially underneath respective gate structures. Modified-doping regions are arranged in the surface-separation regions centrally thereto, underneath respective gate structures, in particular underneath the corresponding dielectric regions, and have a modified concentration of dopant as compared to the concentration of the functional layer. | 06-30-2022 |
| 20220208541 | APPARATUS AND METHOD FOR MANUFACTURING A WAFER - Various embodiments provide an apparatus and method for fabricating a wafer, such as a SiC wafer. The apparatus includes a support having a plurality of arms for supporting a substrate. The arms allows for physical contact between the support and the substrate to be minimized. As a result, when the substrate is melted, surface tension between the arms and molten material is reduced, and the molten material will be less likely to cling to the support. | 06-30-2022 |
| 20220205898 | MEMS MICROPARTICLE SENSOR - A MEMS sensing device for sensing microparticles in an environment external to the MEMS sensing device is provided. The MEMS sensing device comprises a semiconductor body integrating a sensor and a pump unit, the sensor including a sensor cavity, a membrane suspended over the sensor cavity, and a piezoelectric element over the membrane and configured to cause the membrane to oscillate, about an equilibrium position, at a corresponding resonance frequency when sensing electric signals are applied to the piezoelectric element during a first operative phase of the MEMS sensing device, the resonance frequency depending on an amount of microparticles located on the membrane, the membrane having a plurality of through holes for establishing a fluid communication between the sensor cavity and the environment; the pump is configured to cause air pressure in the sensor cavity to be reduced with respect to the air pressure of the environment during the first operative phase, so that microparticles are caused to adhere onto the membrane by a suction force through the plurality of through holes. | 06-30-2022 |
| 20220205784 | MICROMECHANICAL DETECTION STRUCTURE OF A MEMS MULTI-AXIS GYROSCOPE, WITH REDUCED DRIFTS OF CORRESPONDING ELECTRICAL PARAMETERS - A multi-axis MEMS gyroscope includes a micromechanical detection structure having a substrate, a driving-mass arrangement, a driven-mass arrangement with a central window, and a sensing-mass arrangement which undergoes sensing movements in the presence of angular velocities about a first horizontal axis and a second horizontal axis. A sensing-electrode arrangement is fixed with respect to the substrate and is set underneath the sensing-mass arrangement. An anchorage assembly is set within the central window for constraining the driven-mass arrangement to the substrate at anchorage elements. The anchorage assembly includes a rigid structure suspended above the substrate that is elastically coupled to the driven mass by elastic connection elements at a central portion, and is coupled to the anchorage elements by elastic decoupling elements at end portions thereof. | 06-30-2022 |
| 20220103201 | COMMUNICATION METHOD, CORRESPONDING SYSTEM AND DEVICE - A communication system has a galvanic isolation link coupling a first circuit to a second circuit. The first circuit transmits first data signals to the second circuit and receives second data signals from the second circuit in response to the first data signals. The data signals are transmitted in consecutive time slots of a determined time duration via the galvanic isolation link. The first data signals include polling signals transmitted from the first circuit to the second circuit during consecutive time slots, and on-demand access requests transmitted from the first circuit to the second circuit. The second data signals include status response signals transmitted from the second circuit to the first circuit in response to polling signals received from the first circuit, and access response signals transmitted from the second circuit to the first circuit in response to access requests received from the first circuit. | 03-31-2022 |
| 20220102618 | THIN-FILM PIEZOELECTRIC MICROELECTROMECHANICAL STRUCTURE HAVING IMPROVED ELECTRICAL CHARACTERISTICS AND CORRESPONDING MANUFACTURING PROCESS - A piezoelectric microelectromechanical structure is provided with a piezoelectric stack having a main extension in a horizontal plane and a variable section in a plane transverse to the horizontal plane. The stack is formed by a bottom-electrode region, a piezoelectric material region arranged on the bottom-electrode region, and a top-electrode region arranged on the piezoelectric material region. The piezoelectric material region has, as a result of the variable section, a first thickness along a vertical axis transverse to the horizontal plane at a first area, and a second thickness along the same vertical axis at a second area. The second thickness is smaller than the first thickness. The structure at the first and second areas can form piezoelectric detector and a piezoelectric actuator, respectively. | 03-31-2022 |
| 20220102258 | SEMICONDUCTOR DEVICE AND CORRESPONDING METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES - A packaged semiconductor device includes a substrate having a first surface and a second surface opposite the first surface. At least one semiconductor die is mounted at the first surface of the substrate. Electrically-conductive leads are arranged around the substrate, and electrically-conductive formations couple the at least one semiconductor die to selected leads of the electrically-conductive leads. A package molding material is molded onto the at least one semiconductor die, onto the electrically-conductive leads and onto the electrically-conductive formations. The package molding material leaves the second surface of the substrate uncovered by the package molding material. The substrate is formed by a layer of electrically-insulating material. | 03-31-2022 |
| 20220099960 | MICROELECTROMECHANICAL DEVICE HAVING A STRUCTURE TILTABLE BY PIEZOELECTRIC ACTUATION ABOUT TWO ROTATION AXES - A microelectromechanical device includes a fixed structure having a frame defining a cavity, a tiltable structure elastically suspended above the cavity with main extension in a horizontal plane, a piezoelectrically driven actuation structure which can be biased to cause a desired rotation of the tiltable structure about a first and second rotation axes, and a supporting structure integral with the fixed structure and extending in the cavity starting from the frame. Lever elements are elastically coupled to the tiltable structure at a first end by elastic suspension elements and to the supporting structure at a second end by elastic connecting elements which define a lever rotation axis. The lever elements are elastically coupled to the actuation structure so that their biasing causes the desired rotation of the tiltable structure about the first and second rotation axes. | 03-31-2022 |
| 20220099959 | MICROELECTROMECHANICAL MIRROR DEVICE WITH COMPENSATION OF PLANARITY ERRORS - A microelectromechanical mirror device includes a supporting frame of semiconductor material and a plate of semiconductor material. The plate is connected to the supporting frame so as to be orientable around at least one rotation axis. A reflective layer is arranged on a first region of the plate. A piezoelectric actuation structure extends on a second region of the plate adjacent to the reflective layer. The piezoelectric actuation structure is configured to apply forces such as to modify a curvature of the plate. | 03-31-2022 |
| 20220099957 | INTEGRATED ELECTRONIC MODULE INCLUDING TWO MICROMIRRORS, AND SYSTEM INCLUDING THE ELECTRONIC MODULE - An electronic module includes a first die of semiconductor material including a first reflector, a second die of semiconductor material including a second reflector, and a frame including a first supporting portion and a second supporting portion parallel to one another. The first and second dies are carried, respectively, by the first and second supporting portions and are respectively arranged so that the first reflector faces the second supporting portion and the second reflector faces the first supporting portion. An incoming light beam impinges upon the first reflector and is reflected on the second reflector so as to be supplied at output from the electronic module. | 03-31-2022 |
| 20220076955 | MANUFACTURING METHOD OF AN ELEMENT OF AN ELECTRONIC DEVICE HAVING IMPROVED RELIABILITY, AND RELATED ELEMENT, ELECTRONIC DEVICE AND ELECTRONIC APPARATUS - A manufacturing method of an anchorage element of a passivation layer, comprising: forming, in a semiconductor body made of SiC and at a distance from a top surface of the semiconductor body, a first implanted region having, along a first axis, a first maximum dimension; forming, in the semiconductor body, a second implanted region, which is superimposed to the first implanted region and has, along the first axis, a second maximum dimension smaller than the first maximum dimension; carrying out a process of thermal oxidation of the first implanted region and second implanted region to form an oxidized region; removing said oxidized region to form a cavity; and forming, on the top surface, the passivation layer protruding into the cavity to form said anchorage element fixing the passivation layer to the semiconductor body. | 03-10-2022 |
| 20220013982 | ELECTRONIC DEVICE FOR LIDAR APPLICATIONS - An electronic device is couplable to a plurality of laser diodes and includes a control switch having a drain coupled to a drain metallization and having a source coupled to a first source metallization that is electrically couplable to cathodes of the laser diodes. Each of a plurality of first switches has a drain coupled to the drain metallization and a source coupled to a respective second source metallization that is couplable to an anode of the laser diodes. The second source metallizations are aligned with one another in a direction of alignment, overlie, in a direction orthogonal to the direction of alignment, the respective sources of the first switches, and can be aligned, in a direction orthogonal to the direction of alignment, to the respective laser diodes. At least one of the sources of the first switches can be aligned, in a direction orthogonal to the direction of alignment, to the respective laser diode. | 01-13-2022 |
| 20220013439 | PACKAGED HIGH VOLTAGE MOSFET DEVICE WITH CONNECTION CLIP AND MANUFACTURING PROCESS THEREOF - An HV MOSFET device has a body integrating source conductive regions. Projecting gate structures are disposed above the body, laterally offset with respect to the source conductive regions. Source contact regions, of a first metal, are arranged on the body in electric contact with the source conductive regions, and source connection regions, of a second metal, are arranged above the source contact regions and have a height protruding with respect to the projecting gate structures. A package includes a metal support bonded to a second surface of the body, and a dissipating region, above the first surface of the semiconductor die. The dissipating region includes a conductive plate having a planar face bonded to the source connection regions and spaced from the projecting gate structures. A package mass of dielectric material is disposed between the support and the dissipating region and incorporates the semiconductor die. The dissipating region is a DBC-type insulation multilayer. | 01-13-2022 |
| 20220012569 | COMPUTER-IMPLEMENTED DATA PROCESSING METHOD, MICRO-CONTROLLER SYSTEM AND COMPUTER PROGRAM PRODUCT - A computer-implemented method applies a pooling operator to an input array of data, the pooling operator having an absorbing element value and a set of pooling parameters. A size of an output buffer is computer as a function of the set of pooling parameters. The elements of the output buffer are initialized to the value of the absorbing element of the pooling operator. The output array of data is generated by, for a plurality of iterations associated with respective pooling windows: associating, as a function of the pooling parameters, elements of the input array of a pooling window with output elements of the output buffer; and combining, for each output element of the output buffer, the respective input elements associated with the output element. The combining may include determining a combination of respective elements of the output buffer with the input elements associated with the output elements. | 01-13-2022 |
| 20220011567 | MEMS MICROMIRROR DEVICE ENVELOPED IN A PACKAGE HAVING A TRANSPARENT SURFACE AND HAVING A TILTABLE PLATFORM - A MEMS micromirror device is formed in a package including a containment body and a lid transparent to a light radiation. The package forms a cavity housing a tiltable platform having a reflecting surface. A metastructure is formed on the lid and/or on the reflecting surface and includes a plurality of diffractive optical elements. | 01-13-2022 |
| 20220006988 | MEMS RESONANCE CONTROL USING PHASE DETECTION - A light projection system includes a MEMS mirror operating on a mirror drive signal to generate a mirror sense signal resulting from operation of the MEMS mirror based on the mirror drive signal. A mirror driver generates the mirror drive signal from a drive control signal. A controller receives the mirror sense signal from the MEMS mirror, obtains a first sample of the mirror sense signal at a first phase thereof, obtains a second sample of the mirror sense signal at a second phase thereof, wherein the first and second phases are separated by a half period of the mirror drive signal, with the second phase occurring after the first phase, and generates the drive control signal based on a difference between the first and second samples to keep the mirror drive signal separated in phase from the mirror sense signal by a desired amount of phase separation. | 01-06-2022 |
| 20220005702 | PROCESS FOR MANUFACTURING A SILICON CARBIDE SEMICONDUCTOR DEVICE HAVING IMPROVED CHARACTERISTICS - A process for manufacturing a silicon carbide semiconductor device includes providing a silicon carbide wafer, having a substrate. An epitaxial growth for formation of an epitaxial layer, having a top surface, is carried out on the substrate. Following upon the step of carrying out an epitaxial growth, the process includes the step of removing a surface portion of the epitaxial layer starting from the top surface so as to remove surface damages present at the top surface as a result of propagation of dislocations from the substrate during the previous epitaxial growth and so as to define a resulting top surface substantially free of defects. | 01-06-2022 |
| 20210409914 | DEVICE, SYSTEM AND METHOD FOR SYNCHRONIZING OF DATA FROM MULTIPLE SENSORS - In an embodiment, a device comprises a memory, which, in operation, stores data samples associated with a plurality of data sensors, and circuitry, coupled to the memory, wherein the circuitry, in operation, generates synchronized output data sets associated with the plurality of data sensors. Generating a synchronized output data set includes: determining a reference sample associated with a sensor of the plurality of sensors; verifying a timing validity of a data sample associated with another sensor of the plurality of sensors; identifying a closest-in-time data sample associated with the another sensor of the plurality of sensors with respect to the reference sample; and generating the synchronized output data set based on interpolation. | 12-30-2021 |
| 20210409661 | SYSTEM FOR CONTROLLING LINEAR AXIS OF A MEMS MIRROR - A device has memory and processing circuitry coupled to the memory. The processing circuitry generates a resonant axis drive signal to drive a Micro Electro Mechanical System (MEMS) mirror system at a resonance frequency, and generates a linear axis drive signal to drive the MEMS mirror system at a linear frequency corresponding to a video frame rate. Generating the linear axis drive signal includes generating, using interpolation, a current set of shape values based on a stored set of shape values and an indication of the video frame rate. The linear axis drive signal is generated using the current set of shape values. | 12-30-2021 |
| 20210408929 | METHOD OF OPERATING A FLYBACK CONVERTER WITH ACTIVE CLAMP, CORRESPONDING CONTROL CIRCUIT AND FLYBACK CONVERTER - The present disclosure relates to solutions for operating a flyback converter comprising an active clamp. The flyback converter comprises two input terminals and two output terminals. A first electronic switch and the primary winding of a transformer are connected in series between the input terminals. An active clamp circuit is connected in parallel with the primary winding. The active clamp circuit comprises a series connection of a clamp capacitor and a second electronic switch. A third electronic switch and the secondary winding of the transformer are connected in series between the two output terminals. In particular, the present disclosure relates to solutions for switching the first, second and third electronic switch in order to achieve a zero-voltage switching of the first electronic switch. | 12-30-2021 |
| 20210407894 | SEMICONDUCTOR DEVICE AND CORRESPONDING METHOD - Methods of forming a semiconductor device comprising a lead-frame having a die pad having at least one electrically conductive die pad area and an insulating layer applied onto the electrically conductive die pad area. An electrically conductive layer is applied onto the insulating layer with one or more semiconductor dice coupled, for instance adhesively, to the electrically conductive layer. The electrically conductive die pad area, the electrically conductive layer and the insulating layer sandwiched therebetween form at least one capacitor integrated in the device. The electrically conductive die pad area comprises a sculptured structure with valleys and peaks therein; the electrically conductive layer comprises electrically conductive filling material extending into the valleys in the sculptured structure of the electrically conductive die pad area. | 12-30-2021 |
| 20210405346 | ANGULAR PIEZOELECTRIC ACTUATOR FOR A MEMS SHUTTER AND MANUFACTURING METHOD THEREOF - A MEMS actuator includes a main body having a central portion, couplable to a substrate, and a peripheral portion suspended over the substrate when the central portion is coupled to the substrate. The peripheral portion has a deformable structure extending around the central portion, and forming successively arranged membranes. The MEMS actuator includes bearing structures and corresponding piezoelectric actuators. The bearing structures are fixed at their top to the deformable structure and laterally delimit corresponding cavities, each having a lateral opening facing the central portion of the main body and closed at the top by a membrane. A fixed part of the membrane is fixed to the underlying bearing structure and a suspended part is laterally offset with respect to the underlying bearing structure. The piezoelectric actuators are controllable to cause deformation of the corresponding membrane and rotation of the bearing structures around the central portion of the main body. | 12-30-2021 |
| 20210402559 | METHOD AND A SYSTEM FOR EVALUATING THE PHYSICAL CONSUMPTION OF A POLISHING PAD OF A CMP APPARATUS, AND CMP APPARATUS - A method for evaluating the physical consumption of a polishing pad of a CMP apparatus provided with an eddy current sensor that is configured to sense a distance with a substrate on which a layer to be processed extends. The method includes: generating a magnetic field adapted to induce eddy currents in the layer; acquiring an eddy current signal generated by the layer in response to the magnetic field; calculating an average value of the eddy current signal in the initial time frame; comparing the average value with a pre-set threshold value; and determining a maintenance condition of the polishing pad based on a result of the comparison. | 12-30-2021 |
| 20210399154 | METHOD FOR MANUFACTURING A UV-RADIATION DETECTOR DEVICE BASED ON SIC, AND UV-RADIATION DETECTOR DEVICE BASED ON SIC - A device for detecting UV radiation, comprising: a SiC substrate having an N doping; a SiC drift layer having an N doping, which extends over the substrate; a cathode terminal; and an anode terminal. The anode terminal comprises: a doped anode region having a P doping, which extends in the drift layer; and an ohmic-contact region including one or more carbon-rich layers, in particular graphene and/or graphite layers, which extends in the doped anode region. The ohmic-contact region is transparent to the UV radiation to be detected. | 12-23-2021 |
| 20210399089 | 4H-SIC ELECTRONIC DEVICE WITH IMPROVED SHORT-CIRCUIT PERFORMANCES, AND MANUFACTURING METHOD THEREOF - An electronic device includes a semiconductor body of silicon carbide, and a body region at a first surface of the semiconductor body. A source region is disposed in the body region. A drain region is disposed at a second surface of the semiconductor body. A doped region extends seamlessly at the entire first surface of the semiconductor body and includes one or more first sub-regions having a first doping concentration and one or more second sub-regions having a second doping concentration lower than the first doping concentration. Thus, the device has zones alternated to each other having different conduction threshold voltage and different saturation current. | 12-23-2021 |
| 20210396819 | HALL SENSOR, CORRESPONDING DEVICES AND METHOD - A planar Hall sensing element includes a first pair of sensing electrodes mutually opposed in a first direction across the sensing element and a second pair of sensing electrodes mutually opposed in a second direction across the sensing element, with the second direction orthogonal to the first direction. A first pair of bias electrodes is mutually opposed in a third direction and a second pair mutually opposed in a fourth direction across the sensing element, the fourth direction orthogonal to the third direction. The third and fourth directions are rotated 45° with respect to the first and second directions so each sensing electrode is arranged between a bias electrode of the first pair and second pair. A DC bias current is supplied between the first and second pairs of bias electrodes. First and second Hall voltages are sensed at the first and second pairs of sensing electrodes. | 12-23-2021 |
| 20210395075 | MICROELECTROMECHANICAL MEMBRANE TRANSDUCER WITH ACTIVE DAMPER - A microelectromechanical membrane transducer includes: a supporting structure; a cavity formed in the supporting structure; a membrane coupled to the supporting structure so as to cover the cavity on one side; a cantilever damper, which is fixed to the supporting structure around the perimeter of the membrane and extends towards the inside of the membrane at a distance from the membrane; and a damper piezoelectric actuator set on the cantilever damper and configured so as to bend the cantilever damper towards the membrane in response to an electrical actuation signal. | 12-23-2021 |
| 20210394181 | ANALYSIS UNIT FOR A TRANSPORTABLE MICROFLUIDIC DEVICE, IN PARTICULAR FOR SAMPLE PREPARATION AND MOLECULE ANALYSIS - An analysis unit formed by an analysis body housing an analysis chamber and having a sample inlet and a supply channel configured to fluidically connect the sample inlet to the analysis chamber. Dried assay reagents are arranged in the analysis chamber and are contained in an alveolar mass. For instance, the alveolar mass is a lyophilized mass formed by excipients and by assay-specific reagents. | 12-23-2021 |
| 20210385059 | CLOCK RECOVERY METHOD, CORRESPONDING CIRCUIT AND SYSTEM - An input signal arranged in frames is received. The frames include a cyclic redundancy check (CRC) field including a number of bits having bit edges. A timing signal is generated to include adjustable duration waveforms at one of a first duration value and a second duration value. A CRC check determines the occurrence, over the duration, of a number of waveforms of the timing signal having their duration adjusted to one of the first duration value and the second duration value which corresponds to the number of bits. A check signal is produced having a pass/fail value. If pass, the duration of the waveforms in the timing signal is maintained adjusted to the one of the first duration value and the second duration value. If fail, the duration of the waveforms in the timing signal is re-adjusted to the other of the first duration value and the second duration value. | 12-09-2021 |
| 20210384830 | CONTROL CIRCUIT FOR AN ELECTRONIC CONVERTER, RELATED INTEGRATED CIRCUIT, ELECTRONIC CONVERTER AND METHOD - A control circuit for controlling switching operation of a switching stage of a converter includes a phase detector circuit that generates a pulse-width modulated (PWM) signal in response to a phase comparison of two clock signals. A first clock signal has a frequency determined as a function of a first feedback signal proportional to converter output voltage. A first transconductance amplifier generates a first current indicative of a difference between a reference voltage and the first feedback signal, and a second transconductance amplifier generates a second current indicative of a difference between the reference voltage and a second feedback signal proportional to a derivative of the converter output voltage. A delay line introduces a delay in the first clock signal that is dependent on the first and second currents as well as a compensation current dependent on a selected operational mode of the converter. | 12-09-2021 |
| 20210376735 | GALVANICALLY ISOLATED DC-DC CIRCUIT CONVERTER WITH DATA COMMUNICATION, CORRESPONDING SYSTEM AND CORRESPONDING METHOD - A DC-DC converter includes: an transformer having a primary winding and a secondary winding magnetically coupled to the primary winding; a power oscillator applying an oscillating signal to the primary to transmit a power signal to the secondary winding; a rectifier connected to the secondary winding of the transformer to obtain an output DC voltage by rectification of the power signal; comparison circuitry to generate an error signal representing a difference between the output DC voltage and a reference voltage; a transmitter connected to the secondary winding of the transformer to apply an amplitude modulation to the power signal at the secondary winding of the transformer in response to the error signal to thereby produce an amplitude modulated signal at the primary winding; and a receiver and control circuit connected to the primary winding to control an amplitude of the oscillating signal as a function of the amplitude modulated signal. | 12-02-2021 |
| 20210375839 | SEMICONDUCTOR DIE WITH IMPROVED THERMAL INSULATION BETWEEN A POWER PORTION AND A PERIPHERAL PORTION, METHOD OF MANUFACTURING, AND PACKAGE HOUSING THE DIE - A semiconductor die includes a structural body that has a power region and a peripheral region surrounding the power region. At least one power device is positioned in the power region. Trench-insulation means extend in the structural body starting from the front side towards the back side along a first direction, adapted to hinder conduction of heat from the power region towards the peripheral region along a second direction orthogonal to the first direction. The trench-insulation means have an extension, in the second direction, greater than the thickness of the structural body along the first direction. | 12-02-2021 |
| 20210375787 | LEAD FRAME SURFACE FINISHING - The present disclosure is directed to a lead frame design that includes a copper alloy base material coated with an electroplated copper layer, a precious metal, and an adhesion promotion compound. The layers compensate for scratches or surface irregularities in the base material while promoting adhesion from the lead frame to the conductive connectors, and to the encapsulant by coupling them to different layers of a multilayer coating on the lead frame. The first layer of the multilayer coating is a soft electroplated copper to smooth the surface of the base material. The second layer of the multilayer coating is a thin precious metal to facilitate a mechanical coupling between leads of the lead frame and conductive connectors. The third layer of the multilayer coating is the adhesion promotion compound for facilitating a mechanical coupling to an encapsulant around the lead frame. | 12-02-2021 |
| 20210375726 | METHOD OF MANUFACTURING SEMICONDUCTOR PRODUCTS, CORRESPONDING SUBSTRATE, SEMICONDUCTOR PRODUCT AND TOOL - In providing electrical wire-like connections between at least one semiconductor die arranged on a semiconductor die mounting area of a substrate and an array of electrically-conductive leads in the substrate, pressure force is applied to the electrically-conductive leads in the substrate during bonding the wire-like connections to the electrically-conductive leads. Such a pressure force is applied to the electrically-conductive leads in the substrate via a pair of mutually co-operating force transmitting surfaces. These surfaces include a first convex surface engaging a second concave surface. | 12-02-2021 |
| 20210367062 | HEMT TRANSISTOR OF THE NORMALLY OFF TYPE INCLUDING A TRENCH CONTAINING A GATE REGION AND FORMING AT LEAST ONE STEP, AND CORRESPONDING MANUFACTURING METHOD - A method forms an HEMT transistor of the normally off type, including: a semiconductor heterostructure, which comprises at least one first layer and one second layer, the second layer being set on top of the first layer; a trench, which extends through the second layer and a portion of the first layer; a gate region of conductive material, which extends in the trench; and a dielectric region, which extends in the trench, coats the gate region, and contacts the semiconductor heterostructure. A part of the trench is delimited laterally by a lateral structure that forms at least one first step. The semiconductor heterostructure forms a first edge and a second edge of the first step, the first edge being formed by the first layer. | 11-25-2021 |
| 20210364375 | RESISTIVE BRIDGE SENSOR WITH TEMPERATURE COMPENSATION - A bridge driver circuit applies a bias voltage across first and second input nodes of a resistive bridge circuit configured to measure a physical property such as pressure or movement. A sensing circuit senses a bridge current that flows through the resistive bridge circuit in response to the applied bias voltage. A temperature dependent sensitivity of the resistive bridge circuit is determined by processing the sensed bridge current. A voltage output at first and second output nodes of the resistive bridge circuit is processed to determine a value of the physical property. This processing further involves applying a temperature correction in response to the determined temperature dependent sensitivity. | 11-25-2021 |
| 20210363000 | PROCESS FOR MANUFACTURING A MICRO-ELECTRO-MECHANICAL DEVICE, AND MEMS DEVICE - A process for manufacturing a MEMS device includes forming a first structural layer of a first thickness on a substrate. First trenches are formed through the first structural layer, and masking regions separated by first openings are formed on the first structural layer. A second structural layer of a second thickness is formed on the first structural layer in direct contact with the first structural layer at the first openings and forms, together with the first structural layer, thick structural regions having a third thickness equal to the sum of the first and the second thicknesses. A plurality of second trenches are formed through the second structural layer, over the masking regions, and third trenches are formed through the first and the second structural layers by removing selective portions of the thick structural regions. | 11-25-2021 |
| 20210359657 | AUTOMATIC GAIN CONTROL CIRCUIT, CORRESPONDING RECEIVER, TRANSMITTER AND METHOD - A receiver or transmitter circuit includes a signal propagation path between a radio-frequency (RF) signal node and a baseband processing circuit. Variable gain circuitry is configured to vary a gain applied to a signal propagating between the RF signal node and the baseband processing circuit. The variable gain circuitry varies the gain via first, coarse steps as well as via second, fine steps. This facilitates fine matching of the gains experienced by signals propagating over the in-phase and the quadrature branches in the transmitter and/or receiver circuit. | 11-18-2021 |
| 20210359189 | METHOD OF FABRICATION OF AN INTEGRATED THERMOELECTRIC CONVERTER, AND INTEGRATED THERMOELECTRIC CONVERTER THUS OBTAINED - A method of fabricating a thermoelectric converter that includes providing a layer of a Silicon-based material having a first surface and a second surface, opposite to and separated from the first surface by a Silicon-based material layer thickness; forming a plurality of first thermoelectrically active elements of a first thermoelectric semiconductor material having a first Seebeck coefficient, and forming a plurality of second thermoelectrically active elements of a second thermoelectric semiconductor material having a second Seebeck coefficient, wherein the first and second thermoelectrically active elements are formed to extend through the Silicon-based material layer thickness, from the first surface to the second surface; forming electrically conductive interconnections in correspondence of the first surface and of the second surface of the layer of Silicon-based material, for electrically interconnecting the plurality of first thermoelectrically active elements and the plurality of second thermoelectrically active elements, and forming an input electrical terminal and an output electrical terminal electrically connected to the electrically conductive interconnections, wherein the first thermoelectric semiconductor material and the second thermoelectric semiconductor material comprise Silicon-based materials selected among porous Silicon or polycrystalline SiGe or polycrystalline Silicon. | 11-18-2021 |
| 20210351686 | CIRCUIT TO TRANSFER A SIGNAL BETWEEN DIFFERENT VOLTAGE DOMAINS AND CORRESPONDING METHOD TO TRANSFER A SIGNAL - A circuit includes a current path and a negative bootstrap circuitry coupled to the current path. The current path is coupled between a floating voltage and a reference ground, and includes a current generator coupled through a resistor to the floating voltage at a first node of the current generator. The current generator is controlled by a pulse signal. The negative bootstrap circuitry includes a pump capacitor coupled to a second node of the current generator and to the reference ground. The pump capacitor is configured to provide a negative voltage at the second node of the current generator based on the pulse signal. | 11-11-2021 |
| 20210351338 | PIEZOELECTRIC ACTUATOR HAVING A DEFORMATION SENSOR AND FABRICATION METHOD THEREOF - The MEMS actuator is formed by a substrate, which surrounds a cavity; by a deformable structure suspended on the cavity; by an actuation structure formed by a first piezoelectric region of a first piezoelectric material, supported by the deformable structure and configured to cause a deformation of the deformable structure; and by a detection structure formed by a second piezoelectric region of a second piezoelectric material, supported by the deformable structure and configured to detect the deformation of the deformable structure. | 11-11-2021 |
| 20210349491 | BANDGAP REFERENCE CIRCUIT, CORRESPONDING DEVICE AND METHOD - A bandgap circuit includes a supply node as well as a first and second bipolar transistors having jointly coupled base terminal at a bandgap node providing a bandgap voltage. First and second current generators are coupled to the supply node and supply mirrored first and second currents, respectively, to first and second circuit nodes. A third circuit node is coupled to the first bipolar transistor via a first resistor and coupled to ground via a second resistor, respectively. The third circuit node is also coupled to the second bipolar transistor so that the second resistor is traversed by a current which is the sum of the currents through the bipolar transistors. A decoupling stage intermediate the current generators and the bipolar transistors includes first and second cascode decoupling transistors having jointly coupled control terminals receiving a bias voltage sensitive to the bandgap voltage. | 11-11-2021 |
| 20210348911 | ELECTRONIC APPARATUS CONTROL METHOD PERFORMED THROUGH LID ANGLE CALCULATION, ELECTRONIC APPARATUS THEREOF AND SOFTWARE PRODUCT - A method is provided for controlling an electronic apparatus on the basis of a value of a lid angle between a first hardware element accommodating a first magnetometer and a second hardware element accommodating a second magnetometer. The method includes acquiring, through the magnetometers, first signals representing an orientation of the hardware elements. A calibration parameter indicative of a condition of calibration of the magnetometers is generated on the basis of the first signals. A reliability value indicative of a condition of reliability of the first signals is generated on the basis of the first signals. A first intermediate value of the lid angle is calculated on the basis of the first signals. A current value of the lid angle is calculated on the basis of the calibration parameter, of the reliability value, and of the first intermediate value, and the electronic apparatus is controlled on the basis of the current value. | 11-11-2021 |
| 20210347634 | PIEZOELECTRIC ACTUATOR PROVIDED WITH A DEFORMABLE STRUCTURE HAVING IMPROVED MECHANICAL PROPERTIES AND FABRICATION METHOD THEREOF - The MEMS actuator is formed by a body, which surrounds a cavity and by a deformable structure, which is suspended on the cavity and is formed by a movable portion and by a plurality of deformable elements. The deformable elements are arranged consecutively to each other, connect the movable portion to the body and are each subject to a deformation. The MEMS actuator further comprises at least one plurality of actuation structures, which are supported by the deformable elements and are configured to cause a translation of the movable portion greater than the deformation of each deformable element. The actuation structures each have a respective first piezoelectric region. | 11-11-2021 |
| 20210346906 | MICROFLUIDIC DEVICE FOR SPRAYING SMALL DROPS OF LIQUIDS - A microfluidic device provided in a body accommodating a fluid containment chamber. A fluidic access channel and a drop emission channel are formed in the body and are in fluidic connection with the fluid containment chamber to form a fluidic path towards the body outside through a nozzle having an outlet section. An actuator is operatively coupled to the fluid containment chamber and is configured to cause ejection of fluid drops through the drop emission channel in an operating condition of the microfluidic device. The drop emission channel comprises a portion of reduced section having a smaller area than the outlet section of the nozzle. | 11-11-2021 |
| 20210336593 | AMPLIFICATION INTERFACE, AND CORRESPONDING MEASUREMENT SYSTEM AND METHOD FOR CALIBRATING AN AMPLIFICATION INTERFACE - A thermally-isolated-metal-oxide-semiconducting (TMOS) sensor has inputs coupled to first and second nodes to receive first and second bias currents, and an output coupled to a third node. A tail has a first conduction terminal coupled to the third node and a second conduction terminal coupled to a reference voltage. A control circuit applies a control signal to a control terminal of the tail transistor based upon voltages at the first and second nodes so that a common mode voltage at the first and second nodes is equal to a reference common mode voltage. A differential current integrator has a first input terminal coupled to the second node and a second input terminal coupled to the first node, and provides an output voltage indicative of an integral of a difference between a first output current at the first input terminal and a second output current at the second input terminal. | 10-28-2021 |
| 20210335730 | PROCESS FOR MANUFACTURING A STRAINED SEMICONDUCTOR DEVICE AND CORRESPONDING STRAINED SEMICONDUCTOR DEVICE - A process for manufacturing a strained semiconductor device envisages: providing a die of semiconductor material, in which elementary components of the semiconductor device have been integrated by means of initial front-end steps; and coupling, using the die-attach technique, the die to a support, at a coupling temperature. The aforesaid coupling step envisages selecting the value of the coupling temperature at a value higher than an operating temperature of use of the semiconductor device, and moreover selecting the material of the support so that it is different from the material of the die in order to determine, at the operating temperature, a coupling stress that is a function of the different values of the coefficients of thermal expansion of the materials of the die and of the support and of the temperature difference between the coupling temperature and the operating temperature. Furthermore, additional stress can be enhanced by means of different embodiments involving the support, such as ring or multi-layer frame. | 10-28-2021 |
| 20210333195 | MINIATURIZED OPTICAL PARTICLE DETECTOR - A particle detector formed by a body defining a chamber and housing a light source and a photodetector. A reflecting surface is formed by a first reflecting region and a second reflecting region that have a respective curved shape. The curved shapes are chosen from among portions of ellipsoidal, paraboloidal, and spherical surfaces. The first reflecting region faces the light source and the second reflecting region faces the photodetector. The first reflecting region has an own first focus, and the second reflecting region has an own first focus. The first focus of the first reflecting region is arranged in an active volume of the body, designed for detecting particles, and the photodetector is arranged on the first focus of the second reflecting region. | 10-28-2021 |
| 20210328023 | DOPING ACTIVATION AND OHMIC CONTACT FORMATION IN A SIC ELECTRONIC DEVICE, AND SIC ELECTRONIC DEVICE - A method for manufacturing a SiC-based electronic device, that includes implanting, at a front side of a solid body of SiC having a conductivity of N type, dopant species of P type, thus forming an implanted region that extends in depth in the solid body starting from the front side and has a top surface co-planar with said front side; and generating a laser beam directed towards the implanted region in order to generate heating of the implanted region at temperatures comprised between 1500° C. and 2600° C. so as to form an ohmic contact region including one or more carbon-rich layers, for example graphene and/or graphite layers, in the implanted region and, simultaneously, activation of the dopant species of P type. | 10-21-2021 |
| 20210328022 | OHMIC CONTACT FORMATION IN A SIC-BASED ELECTRONIC DEVICE - A method for manufacturing a SiC-based electronic device, comprising the steps of: implanting, on a front side of a solid body made of SiC having a conductivity of an N type, dopant species of a P type thus forming an implanted region, which extends in the solid body starting from the front side and has a top surface coplanar with the front side; and generating a laser beam directed towards the implanted region in order to generate heating of the implanted region to temperatures comprised between 1500° C. and 2600° C. so as to form a carbon-rich electrical-contact region at the implanted region. The carbon-rich electrical-contact region forms an ohmic contact. | 10-21-2021 |
| 20210327792 | PACKAGED STACKABLE ELECTRONIC POWER DEVICE FOR SURFACE MOUNTING AND CIRCUIT ARRANGEMENT - A power device for surface mounting has a leadframe including a die-attach support and at least one first lead and one second lead. A die, of semiconductor material, is bonded to the die-attach support, and a package, of insulating material and parallelepipedal shape, surrounds the die and at least in part the die-attach support and has a package height. The first and second leads have outer portions extending outside the package, from two opposite lateral surfaces of the package. The outer portions of the leads have lead heights greater than the package height, extend throughout the height of the package, and have respective portions projecting from the first base. | 10-21-2021 |
| 20210313887 | CONVERTER CIRCUIT, CORRESPONDING DEVICE AND METHOD - A converter circuit includes a half-bridge power circuit with a first and a second switch between an input node and a current node and between the current node ground, respectively. An inductor is coupled between the current node and an output node. Logic control circuitry is configured to switch the first and second switches to a current recirculation state and to a current charge state. The logic circuitry is configured to switch the switches from the current recirculation state to the current charge state as a result of a voltage indicator signal from an output voltage comparator being asserted while starting an on-time counter signal having an expiration value, and from the current charge state to the current recirculation state as a result of the on-time counter signal having reached its expiration value in combination with the voltage indicator signal from the voltage comparator being de-asserted. | 10-07-2021 |
| 20210313875 | METHOD TO CONTROL A VARIABLE FREQUENCY SWITCHING CONVERTER, AND CORRESPONDING VARIABLE FREQUENCY CONVERTER APPARATUS - A variable duty cycle switching signal at a switching frequency is applied to a switching current regulation circuit arrangement energizing a current storage circuit assembly. Switching of the variable duty cycle switching signal is controlled by an upper and a lower threshold current level. The upper and lower threshold current levels vary with time following an average current value time variation. Additionally, frequency jitter is introduced in the variable duty cycle switching signal by: defining at least a frequency modulation window around a limit frequency identifying a limit value for an acceptable EMI; and applying an amplitude modulation of the upper and/or lower threshold current levels varying with time, wherein the amplitude modulation is applied in a time interval between times when the switching frequency enters and exit the frequency window. | 10-07-2021 |
| 20210313446 | METHOD OF MANUFACTURING A HEMT DEVICE WITH REDUCED GATE LEAKAGE CURRENT, AND HEMT DEVICE - An HEMT device of a normally-on type, comprising a heterostructure; a dielectric layer extending over the heterostructure; and a gate electrode extending right through the dielectric layer. The gate electrode is a stack, which includes: a protection layer, which is made of a metal nitride with stuffed grain boundaries and extends over the heterostructure, and a first metal layer, which extends over the protection layer and is completely separated from the heterostructure by said protection layer. | 10-07-2021 |
| 20210312778 | SYSTEM AND METHOD FOR PRESENCE DETECTION IN AN ENVIRONMENT TO BE MONITORED - A method for presence detection in an environment to be monitored, includes generating an electric charge signal in a condition of absence of presence in the environment to be monitored. An electric charge signal is generated in an operating condition in which a person may be present in the environment. The two generated signals are processed and the results of the processing are compared. Processing the signals includes representing in a biaxial reference system the value of the charge signal considered and its derivative with respect to time, and identifying a plurality of points in the reference system. By comparing the position of the points acquired during the possible human presence with those of the base shape, a variation indicating the actual human presence may be detected. In this case an alarm signal is generated. | 10-07-2021 |
| 20210310877 | AMBIENT TEMPERATURE SENSOR WHICH MAY BE COUPLED TO A PRINTED CIRCUIT BOARD WITH AN IMPROVED PACKAGE - An ambient temperature sensor is provided that may be coupled to a PCB. The ambient temperature sensor includes a package including a first cap and an insulating structure. The insulating structure is formed of thermally insulating material, and the first cap and the insulating structure delimit a first cavity. A semiconductor device is included and generates an electrical signal indicative of a temperature. The semiconductor device is fixed on top of the insulating structure and arranged within the first cavity. The package may be coupled to the PCB so that the insulating structure is interposed between the semiconductor device and the PCB. The insulating structure delimits a second cavity, which extends below the semiconductor device and is open laterally. | 10-07-2021 |
| 20210204049 | MICROELECTROMECHANICAL MICROPHONE - A microelectromechanical microphone includes: a substrate; a sensor chip, integrating a microelectromechanical electroacoustic transducer; and a control chip operatively coupled to the sensor chip. In one embodiment, the sensor chip and the control chip are bonded to the substrate, and the sensor chip overlies, or at least partially overlies, the control chip. In another embodiment, the sensor is bonded to the substrate and a barrier is located around at least a portion of the sensor chip. | 07-01-2021 |
| 20210184576 | HALF-BRIDGE CIRCUIT WITH SLEW RATE CONTROL - First and second n-channel FETs are connected in series between first and second terminals with an intermediate switching node. First and second driver circuits drive gates of the first and second n-channel FETs, respectively, in response to drive signals. The first driver circuit does not implement slew-rate control. A first resistor and capacitor are connected in series between the output of the first driver circuit and an intermediate node. A first electronic switch is connected between the intermediate node and the first terminal. A second electronic switch is connected between the intermediate node and the gate terminal of the first n-channel FET. A second resistor and a third electronic switch are connected in series between the gate terminal of the first n-channel FET and the switching node. A control circuit generates the drive signals and a first, second and third control signal for the first, second and third electronic switch. | 06-17-2021 |
| 20210183849 | POWER MOS DEVICE HAVING AN INTEGRATED CURRENT SENSOR AND MANUFACTURING PROCESS THEREOF - Power MOS device, in which a power MOS transistor has a drain terminal that is coupled to a power supply node, a gate terminal that is coupled to a drive node and a source terminal that is coupled to a load node. A detection MOS transistor has a drain terminal that is coupled to a detection node, a gate terminal that is coupled to the drive node and a source terminal that is coupled to the load node. A detection resistor has a first terminal coupled to the power supply node and a second terminal coupled to the detection node. | 06-17-2021 |
| 20210183752 | SEMICONDUCTOR DEVICE AND CORRESPONDING METHOD - A semiconductor device comprises at least one semiconductor die electrically coupled to a set of electrically conductive leads, and package molding material molded over the at least one semiconductor die and the electrically conductive leads. At least a portion of the electrically conductive leads is exposed at a rear surface of the package molding material to provide electrically conductive pads. The electrically conductive pads comprise enlarged end portions extending at least partially over the package molding material and configured for coupling to a printed circuit board. | 06-17-2021 |
| 20210035894 | LEAD FRAME FOR A PACKAGE FOR A SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND PROCESS FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A lead frame for an integrated electronic device includes a die pad made of a first metallic material. A top coating layer formed by a second metallic material is arranged on a top surface of the die pad. The second metallic material has an oxidation rate lower than the first metallic material. The top coating layer leaves exposed a number of corner portions of the top surface of the die pad. A subsequent heating operation, for example occurring in connection with wirebonding, causes an oxidized layer to form on the corner portions of the top surface of the die pad at a position in contact with the top coating layer. | 02-04-2021 |
| 20210013808 | HALF-BRIDGE DRIVER CIRCUIT - First and second FETs of a half-bridge are series connected between first and second terminals and are gate driven, respectively, by first and second drivers. An inductance is connected to the intermediate node of the half-bridge. Power supply for the second driver circuit is a supply voltage generated by a voltage regulator as a function of the voltage between the first and the second terminal. Power supply for the first driver circuit is a supply voltage generated by a bootstrap capacitor having a first terminal connected via a first switch to receive the supply voltage output from the voltage regulator and a second terminal connected to the intermediate node. The first terminal of the bootstrap capacitor is further connected by a second switch to receive a second supply voltage. A control circuit generates control signals for the first and second driver circuits and the first and second switches. | 01-14-2021 |
| 20200412344 | PVT COMPENSATED DELAY CELL FOR A MONOSTABLE - A monostable circuit includes a delay cell with a reference generator generating a reference current based upon a PVT invariant resistance and a threshold voltage, and a delay block with an output capacitor and an output circuit altering an amount of charge stored on the output capacitor as a function of the reference current, in response to an input signal. An inverter has an input coupled to the output circuit. A logic circuit logically combines output of the inverter and the input signal to generate a monostable trigger pulse. The output circuit includes a current source sourcing the reference current to the output capacitor in response to a first logic state of an input signal, and a current sink sinking current from the output capacitor to discharge the output capacitor, in response to a second logic state of the input signal. | 12-31-2020 |
| 20200412088 | PULSE WIDTH CHECK CIRCUIT FOR LASER DIODE PULSE GENERATOR - A pulsed signal generator generates a pulsed signal having a pulse width intended to be equal to a given fraction of a pulse width of a reference clock. A reference current source outputs current having a reference magnitude, and a comparison current source outputs current having a magnitude that is a function of the reference magnitude and the given fraction. A comparison circuit compares a total current output by one of the reference current source and the comparison current source during pulses of the reference clock to a total current output by the other of the reference current source and the comparison current source during pulses of the pulsed signal equal in number to the pulses of the reference clock in order to determine whether the pulse width of the pulse signal is less than or equal to the given fraction of the pulse width of the reference clock. | 12-31-2020 |
| 20200408819 | ELECTRONIC DEVICE, CORRESPONDING APPARATUS, METHOD AND COMPUTER PROGRAM PRODUCT - An oscillatory electric signal having an oscillation frequency is processed by time-sampling to generate a sampled oscillatory electric signal. A nonlinear circuit driven by the sampled oscillatory electric signal outputs a hysteretic response signal as a function of the sampled oscillatory electric signal. The hysteretic response signal has a frequency in a first frequency range as a result of an increase in the oscillation frequency of the oscillatory electric signal, and a frequency in a second frequency range as a result of a decrease in the oscillation frequency of the oscillatory electric signal. A detection circuit processes the hysteretic response signal to compute an envelope signal of the hysteretic response signal, perform a comparison of the envelope signal with a threshold, and produce a signal indicative of an increase or a decrease in the oscillation frequency of the oscillatory electric signal as a result of the outcome of the comparison. | 12-31-2020 |
| 20200408805 | MEMS ACCELEROMETER SELF-TEST USING AN ACTIVE MOBILE MASS DEFLECTION TECHNIQUE - A microelectromechanical system (MEMS) accelerometer sensor has a mobile mass and a sensing capacitor. To self-test the sensor, a test signal is applied to the sensing capacitor during a reset phase of a sensing circuit coupled to the sensing capacitor. The test signal is configured to cause an electrostatic force which produces a physical displacement of the mobile mass corresponding to a desired acceleration value. Then, during a read phase of the sensing circuit, a variation in capacitance of sensing capacitor due to the physical displacement of the mobile mass is sensed. This sensed variation in capacitance is converted to a sensed acceleration value. A comparison of the sensed acceleration value to the desired acceleration value provides an indication of an error in operation of the MEMS accelerometer sensor if the sensed acceleration value and desired acceleration value are not substantially equal. | 12-31-2020 |
| 20200266781 | AMPLIFIER CIRCUIT, CORRESPONDING SYSTEM, VEHICLE AND METHOD - A cascade of amplifier stages has a differential input and a differential output. The cascade of amplifier stages includes at least one differential amplifier circuit including first and second transistors, at least one of the first and second transistors having a control terminal and a body terminal. A mismatch between the first and second transistors generates an input offset. A feedback network couples the differential output to the body terminal in order to cancel the input offset. The feedback network includes a low-pass filter and a differential amplifier stage. | 08-20-2020 |
| 20200266623 | PROTECTION CIRCUIT, CORRESPONDING SYSTEM AND METHOD - A protection circuit for an automotive wiring harness includes an input node receiving a sensing signal indicating intensity of current in a conductor, an output node emitting a current control output signal to reduce the current and/or emitting a warning signal indicating the current intensity having reached a limit value. Signal processing circuitry coupled to the input node compares the current intensity with a reference value, and produces a comparison signal indicating whether the current intensity exceeds the reference value. A counting circuitry driven by the comparison signal counts in a first count direction as a result of the comparison signal indicating that the current intensity exceeds the reference value. Latching circuitry coupled to the counter circuitry generates the output signal at the output node as a result of the count value of the counter circuitry reaching a limit value. | 08-20-2020 |
| 20200264648 | CIRCUIT ARRANGEMENT FOR THE GENERATION OF A BANDGAP REFERENCE VOLTAGE - A circuit for generating a bandgap voltage includes a circuit module for generation of a base-emitter voltage difference formed by a pair of PNP bipolar substrate transistors which identify a first current path and a second current path. A first current mirror of an n type is connected between the first and second branches and is further connected via a resistance for adjustment of the bandgap voltage to the second bipolar transistor. A second current mirror of a p type is connected between the first and second branches, and connected so that the current mirrors repeat current of each other. In operation to generate the bandgap voltage, current flows from the supply voltage to ground only through said the first and second bipolar substrate transistors. | 08-20-2020 |
| 20200119269 | PHASE CHANGE MEMORY - A phase change memory includes an L-shaped resistive element having a first part that extends between a layer of phase change material and an upper end of a conductive via and a second part that rests at least partially on the upper end of the conductive via and may further extend beyond a peripheral edge of the conductive via. The upper part of the conductive via is surrounded by an insulating material that is not likely to adversely react with the metal material of the resistive element. | 04-16-2020 |
| 20200115218 | MICRO-ELECTRO-MECHANICAL ACTUATOR DEVICE OF PIEZOELECTRIC TYPE AND APPARATUS INTEGRATING THE MICRO-ELECTRO-MECHANICAL ACTUATOR DEVICE - A micro-electro-mechanical (MEMS) actuator device includes a frame, and a first functional sub-structure positioned within the frame and mechanically coupled thereto by supporting elements. The first functional sub-structure is subdivided into first and second portions. The first portion is subdivided into first and second sub-portions separated from one another by a first through trench, and the second portion is subdivided into first and second sub-portions separated from one another by a second through trench. First and second piezo-electric structures are respectively carried by the first and second sub-portions of the first portion. Third and fourth piezo-electric structures are respectively carried by the first and second sub-portions of the second portion. A third through trench extends between the frame and the first functional sub-structure except for regions in which the supporting elements are present. | 04-16-2020 |
| 20200088667 | METHOD OF COUNTERING CONTAMINATION IN GAS SENSORS, CORRESPONDING CIRCUIT, DEVICE AND COMPUTER PROGRAM PRODUCT - A sensor is driven at a first heating power value. The sensor generates a sensing signal that is indicative of a sensed entity. A possible onset of a sensor contamination condition is detected as a function of the sensing signal generated by the sensor. If such detecting fails to indicate onset of a sensor contamination condition, the sensor continues to be driven at the first heating power value. However, if such detecting indicates onset of a sensor contamination condition, a protection mode is activated. In the protection mode, the sensor is driven at a second heating power value for a protection interval, where the second heating power value is lower than the first heating power value. Furthermore, the operation may refrain from supplying power to the sensor for a further protection interval, wherein the further protection interval is longer than the protection interval. | 03-19-2020 |
| 20190317851 | MEMORY ARCHITECTURE INCLUDING RESPONSE MANAGER FOR ERROR CORRECTION CIRCUIT | 10-17-2019 |
| 20180372811 | TEMPERATURE COMPENSATION CIRCUIT, CORRESPONDING DEVICE AND METHOD - A compensation circuit receives a sensing signal from a Hall sensor and outputs a compensated Hall sensing signal. The compensation circuit has a gain that is inversely proportional to Hall sensor drift mobility. The compensated Hall sensing signal is temperature-compensated. | 12-27-2018 |
| 20180372809 | HALL SENSOR READOUT CIRCUIT, CORRESPONDING DEVICE AND METHOD - Hall sensing signals are received in a spinning readout pattern of subsequent readout phases, wherein the pattern is cyclically repeated at a spinning frequency and a polarity of the Hall sensor signals is reversed in two non-adjacent readout phases of the readout pattern. A signal storage circuit includes signal storage capacitors. An accumulation circuit includes accumulation capacitors. A switch network is selectively actuated to couple the signal storage capacitors with the accumulation capacitors synchronously with phases in the spinning readout pattern in subsequent alternating first and second periods. The spinning output is stored with alternating opposite signs on the signal storage capacitors and the Hall sensing signals are stored in the signal storage capacitors and then accumulated on the accumulation capacitors with alternate signs in subsequent periods. The accumulated output signal is then demodulated with a demodulation frequency half the spinning frequency. | 12-27-2018 |
| 20180159451 | MUTUAL INDUCTANCE VOLTAGE OFFSET COMPENSATION FOR BRUSHLESS DC SENSORLESS MOTORS - A control circuit controls the operation of a brushless DC (BLDC) sensorless motor having a first terminal connected to a first winding, a second terminal connected to a second winding and a third terminal connected to a third winding. A driver circuit applies drive signals to the first and second terminals and places the third terminal in a high-impedance state. The drive signals include first drive signals at a first current amplitude and second drive signals at a second current amplitude different from the first current amplitude. A differencing circuit senses a first mutual inductance voltage at the third terminal in response to the first drive signals and senses a second mutual inductance voltage at the third terminal in response to the second drive signals. The differencing circuit further determines a difference between the first and second mutual inductance voltages and produces a difference signal that is used for zero-crossing detection and rotor position sensing. | 06-07-2018 |
| 20180159317 | CURRENT LIMITER, CORRESPONDING DEVICE AND METHOD - A power transistor supplying power to a load is coupled to a current limiter circuit including a differential amplifier that operates to detect a difference between a sense voltage, indicative of a load current, and a voltage reference. A control terminal of the power transistor is driven by a first output of the differential amplifier as a function of the detected difference. A voltage clamp circuit coupled to an input terminal generates a floating ground. A short-circuit protection circuit coupled to the floating ground and interposed between a second output of the differential amplifier and the control terminal of the power transistor provides a short-circuit protection for the first output of the differential amplifier. A reaction time circuit is coupled between the first and second outputs of the differential amplifier and a source terminal of the power transistor to limit a short-circuit current at the source terminal. | 06-07-2018 |
| 20180157030 | ELECTROSTATICALLY ACTUATED OSCILLATING STRUCTURE WITH OSCILLATION STARTING PHASE CONTROL, AND MANUFACTURING AND DRIVING METHOD THEREOF - An electrostatically actuated oscillating structure includes a first stator subregion, a second stator subregion, a first rotor subregion and a second rotor subregion. Torsional elastic elements mounted to the first and second rotor subregions define an axis of rotation. A mobile element is coupled to the torsional elastic elements. The stator subregions are electrostatically coupled to respective regions of actuation on the mobile element. The stator subregions exhibit an element of structural asymmetry such that the electrostatic coupling surface between the first stator subregion and the first actuation region differs from the electrostatic coupling surface between the second stator subregion and the second actuation region. | 06-07-2018 |
| 20180106854 | SYSTEM AND METHOD FOR ELECTRICAL TESTING OF THROUGH SILICON VIAS (TSVS) - A testing system for carrying out electrical testing of at least one first through via forms an insulated via structure extending only part way through a substrate of a first body of semiconductor material. The testing system has a first electrical test circuit integrated in the first body and electrically coupled to the insulated via structure. The first electrical test circuit enables detection of at least one electrical parameter of the insulated via structure. | 04-19-2018 |
| 20170265062 | RECEIVER AND CORRESPONDING PROCESS - A receiver for digital signals includes a radiofrequency stage. A feedback loop controls an amplitude of a modulated radiofrequency signal passing through the radiofrequency stage as a function of a comparison of a baseband signal with a reference value. A baseband stage includes an RC network cascaded to the radiofrequency stage and coupled to a baseband detector that generates the baseband signal. The feedback loop includes a circuit for detecting a range of variation of the comparison. The amplitude of the modulated radiofrequency signal is controlled as a function of an end value (e.g., maximum or minimum) of the detected range of variation. A switching circuit operates to selectively short circuit a resistive component of the RC network during receiver start-up. | 09-14-2017 |
| 20170200669 | PROCESS FOR MANUFACTURING A PACKAGE FOR A SURFACE-MOUNT SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A process for manufacturing a surface-mount electronic device includes forming a plurality of preliminary contact regions of a sinterable material on a supporting structure, the supporting structure being of a soluble type. A chip including a semiconductor body is mechanically coupled to the supporting structure. The sinterable material is sintered such that each preliminary contact region forms a corresponding sintered preliminary contact, and the chip and the plurality of preliminary contact regions are coated with a dielectric coating region, and the supporting structure is removed using a jet of liquid. | 07-13-2017 |
| 20170200483 | IDENTIFICATION OF A CONDITION OF A SECTOR OF MEMORY CELLS IN A NON-VOLATILE MEMORY - A non-volatile memory of a complementary type includes sectors of memory cells, with each cell formed by a direct memory cell and a complementary memory cell. Each sector is in a non-written condition when the corresponding memory cells are in equal states and is in a written condition wherein each location thereof stores a first logic value or a second logic value when the memory cells of the location are in a first combination of different states or in a second combination of different states, respectively. A sector is selected and a determination is made as to a number of memory cells in the programmed state and a number of memory cells in the erased state. From this information, the condition of the selected sector is identified from a comparison between the number of memory cells in the programmed state and the number of memory cells in the erased state. | 07-13-2017 |
| 20170178744 | MEMORY CELL AND CORRESPONDING DEVICE - A radiation hardened memory cell includes an odd number of storage elements configured to redundantly store an input data logic signal. The storage elements include output lines for outputting respective logic signals having respective logic values. A logic combination network receives the respective logic signals and is configured to generate an output signal having a same logic value as a majority of the logic signals output from the storage elements. An exclusive logic sum circuit receives the respective logic signals output from the storage elements and is configured to produce a refresh of the logic data signal as stored in the storage elements when one of the logic signals output from the storage elements undergoes a logic value transition due to an error event. | 06-22-2017 |
| 20170160540 | MICROMECHANICAL DEVICE HAVING A STRUCTURE TILTABLE BY A QUASI-STATIC PIEZOELECTRIC ACTUATION - A micromechanical device includes a tiltable structure that is rotatable about a first rotation axis. The tiltable structure is coupled to a fixed structure through an actuation structure of a piezoelectric type. The actuation structure is formed by spring elements having a spiral shape. The spring elements each include actuation arms extending transversely to the first rotation axis. Each actuation arm carries a respective piezoelectric band of piezoelectric material. The actuation arms are divided into two sets with the piezoelectric bands thereof biased in phase opposition to obtain rotation in opposite directions of the tiltable structure about the first rotation axis. | 06-08-2017 |
| 20170155879 | RESONANT BIAXIAL MEMS REFLECTOR WITH PIEZOELECTRIC ACTUATORS, AND PROJECTIVE MEMS SYSTEM INCLUDING THE SAME - A MEMS device includes a fixed structure and a mobile structure with a reflecting element coupled to the fixed structure through at least a first deformable structure and a second deformable structure. Each of the first and second deformable structures includes a respective number of main piezoelectric elements, with the main piezoelectric elements of the first and second deformable structures configured to be electrically controlled for causing oscillations of the mobile structure about a first axis and a second axis, respectively. The first deformable structure further includes a respective number of secondary piezoelectric elements configured to be controlled so as to vary a first resonance frequency of the mobile structure about the first axis. | 06-01-2017 |
| 20170154948 | INTEGRATED CIRCUIT COMPRISING AT LEAST AN INTEGRATED ANTENNA - An integrated circuit on a substrate includes a peripheral portion that surrounds an active area and is positioned close to a scribe line providing separation with other integrated circuits realized on a same wafer. The integrated circuit includes at least one conductive structure that extends in the peripheral portion on different planes of metallizations starting from the substrate and forms an integrated antenna. Another conductive structure extends in the peripheral portion on different planes of metallizations and forms a seal ring. | 06-01-2017 |
| 20170154727 | GALVANIC ISOLATION SYSTEM, APPARATUS AND METHOD - A galvanic isolation system includes a first isolation barrier and a second isolation barrier. The first isolation barrier includes a transformer. The second isolation barrier includes an inductive circuit connected to a secondary winding of the transformer. The first and the second isolation barriers are coupled to form an LC resonant network. | 06-01-2017 |
| 20170153443 | MICROMECHANICAL STRUCTURE WITH BIAXIAL ACTUATION AND CORRESPONDING MEMS DEVICE - A reflector micromechanical structure includes a frame with a window. The frame is elastically connected to an anchorage structure by first elastic elements. An actuation structure operatively coupled to the frame is configured to generate a first actuation movement of the frame about a first actuation axis. A mobile mass is positioned within the window and elastically coupled to the frame by second elastic elements. A mass distribution is associated to the mobile mass such as to generate, by an inertial effect in response to the first actuation movement, a second actuation movement of rotation of the mobile mass about a second actuation axis. | 06-01-2017 |
| 20170141019 | SEMICONDUCTOR DEVICE, CORRESPONDING METHODS OF PRODUCTION AND USE AND CORRESPONDING APPARATUS - A semiconductor device includes a quadrilateral package with a first pair of opposed sides and a second pair of opposed sides. Both sides of the first pair of opposed sides are provided with electrical contact leads. Only one side of the second pair of opposed sides is provided with electrical contact leads. The side of the second pair of opposed sides without electrical contact leads is a leadless side. That side is not a molded side of the package, but rather is defined by a cut surface. | 05-18-2017 |
| 20170140944 | SEMICONDUCTOR DEVICE, CORRESPONDING METHODS OF PRODUCTION AND USE AND CORRESPONDING APPARATUS - A semiconductor device includes a quadrilateral package with a first pair of opposed sides and a second pair of opposed sides. Both sides of the first pair of opposed sides are provided with electrical contact leads. Only one side of the second pair of opposed sides is provided with electrical contact leads. The side of the second pair of opposed sides without electrical contact leads is a leadless side. That side is not a molded side of the package, but rather is defined by a cut surface. | 05-18-2017 |
| 20160377691 | INTEGRATED AMR MAGNETORESISTOR WITH LARGE SCALE - An integrated AMR magnetoresistive sensor has a magnetoresistor, a set/reset coil and a shielding region arranged on top of each other. The set/reset coil is positioned between the magnetoresistor and the shielding region. The magnetoresistor is formed by a magnetoresistive strip of an elongated shape having a length in a first direction parallel to the preferential magnetization direction and a width in a second direction perpendicular to the first direction. The set/reset coil has at least one stretch extending transversely to the magnetoresistive strip. The shielding region is a ferromagnetic material and has a width in the second direction greater than the width of the magnetoresistive strip so as to attenuate the external magnetic field traversing the magnetoresistive strip and increase the sensitivity scale of the magnetoresistive sensor. | 12-29-2016 |
| 20160301325 | RECTIFYING BRIDGE CONTROL CIRCUIT | 10-13-2016 |
| 20160296377 | IMPLANTABLE MODULAR SYSTEM FOR A SYSTEM FOR ELECTRICALLY STIMULATING A BIOLOGICAL TISSUE | 10-13-2016 |
| 20160190046 | PROCESS FOR MANUFACTURING A PACKAGE FOR A SURFACE-MOUNT SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A surface-mount electronic device includes a body of semiconductor material, and a lead frame that includes a plurality of contact terminals. The plurality of contact terminals is electrically connected to the semiconductor body. The contact terminals are formed of sintered material. | 06-30-2016 |
| 20160163906 | AVALANCHE PHOTODIODE OPERATING IN GEIGER MODE INCLUDING A STRUCTURE FOR ELECTRO-OPTICAL CONFINEMENT FOR CROSSTALK REDUCTION, AND ARRAY OF PHOTODIODES - An avalanche photodiode includes a cathode region and an anode region. A lateral insulating region including a barrier region and an insulating region surrounds the anode region. The cathode region forms a planar optical guide within a core of the cathode region, the guide being configured to guide photons generated during avalanche. The barrier region has a thickness extending through the planar optical guide to surround the core and prevent propagation of the photons beyond the barrier region. The core forms an electrical-confinement region for minority carriers generated within the core. | 06-09-2016 |
| 20160141216 | PROBE PAD WITH INDENTATION - An integrated electronic circuit has probe indentations filled by a hard covering substance. The integrated circuit device results from a process of manufacturing including forming a substrate comprising a plurality of functional components of the electronic circuit, creating a plurality of conductive layers on such substrate to form an electric contact region with high hardness equal to or greater than a first hardness value of about 300 HV, contacting the electric contact region with a probe thereby causing an indentation. The process further comprises, after the test run, creating a covering conductive layer on at least one part of the electric contact region contacted by the probe to fill the indentation. | 05-19-2016 |
| 20160126873 | SENSORLESS ROTOR ANGLE DETECTION CIRCUIT AND METHOD FOR A PERMANENT MAGNET SYNCHRONOUS MACHINE - An estimate of the initial position of a rotor is made by monitoring sensed motor current signals which are amplitude and phase modulated with the rotor flux position in response to a high frequency voltage signal injection. The motor current signals are envelope detected to determine zero crossing points. Samples are taken of the motor current signals at positive and negative offsets from the zero crossing point, with the samples processed to identify a direction of the rotor flux axis. Further samples of at least one motor current signal are taken with respect to a certain phase reference, and the samples compared to resolve a polarity of the rotor flux axis which is indicative of the angular position of the rotor. | 05-05-2016 |
| 20160111507 | ELECTRONIC DEVICE COMPRISING CONDUCTIVE REGIONS AND DUMMY REGIONS - A device includes an epitaxial region extending into a front surface of a chip. A portion of the chip adjacent the epitaxial region defines a collector. A gate is provided in a trench extending into the epitaxial region from the front surface. An emitter includes a body extending into the epitaxial region at a first side of the trench and a source extending into the body region from the front surface at the trench. A dummy emitter extends into the epitaxial region from the front surface at a second side of the trench opposite said first side. The dummy emitter lacks the source. The gate extends along a first wall of the trench facing the emitter region. A dummy gate is formed in the trench in a manner electrically isolated from the gate and extending along a second wall of the trench opposite said first wall. | 04-21-2016 |
| 20160105017 | OVER-VOLTAGE PROTECTION CIRCUIT FOR A DRIVE TRANSISTOR - A drive transistor is connected to a resonant load in a low-side drive configuration. The voltage across the conduction terminals of the drive transistor is sensed and compared to an over-voltage threshold. An over-voltage signal is asserted in response to the comparison. The drive transistor is controlled by a PWM control signal in normal mode. In response to the assertion of the over-voltage signal, the drive transistor is forced to turn on (irrespective of the PWM control signal) to relieve the over-voltage condition. Operation of the circuit may be disabled or forced into soft start mode in response to the assertion of the over-voltage signal. Additionally, the pulse width of the PWM control signal may be reduced in response to the assertion of the over-voltage signal. | 04-14-2016 |
| 20160099582 | SINGLE INDUCTOR DC-DC CONVERTER WITH REGULATED OUTPUT AND ENERGY HARVESTING SYSTEM - An energy harvesting circuit receives an input voltage from a transducer and uses a single inductor operating in a DC-DC converter charging mode to generate charging current at a first output coupled to an energy storage device where a supply voltage is stored. The energy harvesting circuit further receives the supply voltage from the energy storage device and uses the same single inductor operating in a DC-DC converter regulating mode to generate load current at a second output where a regulated load voltage is provided. The energy harvesting circuit switches between the charging mode and the regulating mode in accordance with a discontinuous mode (DCM) control process. | 04-07-2016 |
| 20160094831 | MIRROR MICROMECHANICAL STRUCTURE AND RELATED MANUFACTURING PROCESS - A mirror micromechanical structure has a mobile mass carrying a mirror element. The mass is drivable in rotation for reflecting an incident light beam with a desired angular range. The mobile mass is suspended above a cavity obtained in a supporting body. The cavity is shaped so that the supporting body does not hinder the reflected light beam within the desired angular range. In particular, the cavity extends as far as a first side edge wall of the supporting body of the mirror micromechanical structure. The cavity is open towards, and in communication with, the outside of the mirror micromechanical structure at the first side edge wall. | 03-31-2016 |
| 20160094378 | SYSTEM FOR GENERATING A CALIBRATION SIGNAL, RELATED TRANSCEIVER AND METHOD - A calibration signal is generated from a modulating signal having a first frequency and a carrier signal having a second frequency. A single-sideband mixer modulates the modulating signal on the carrier signal. At least two frequency dividers by two connected in cascade receive the modulating signal modulated on the carrier signal and generate an output of the calibration signal. | 03-31-2016 |
| 20160081179 | MANUFACTURING OF A HEAT SINK BY WAVE SOLDERING - An electronic device is attached to a first surface of a board which includes vias. A heat sink precursor for the electronic device is attached to the second surface of the electronic board. The heat sink precursor includes a cavity facing the vias. A wave of solder paste is applied to the second surface. The solder paste penetrates into the cavity of the heat sink precursor and flows by capillary action through the vias to weld a thermal radiator and/or electronic contact of the electronic device to the vias. The solder paste further remains in the cavity to form a corresponding heat sink. | 03-17-2016 |
| 20160079857 | BOOST CONVERTER AND RELATED INTEGRATED CIRCUIT - A boost converter receives an input voltage and provides an output voltage and includes a power switch and a voltage control circuit configured to drive the power switch as a function of the output voltage. A voltage sensing circuit in the form of a voltage divider is coupled to sense the output voltage and provide a feedback voltage. The voltage control circuit drives the power switch. An electronic control switch is configured to selectively connect the voltage divider to sense the output voltage as a function of an enable signal generated by a timer circuit. The enable signal is pulsed such that the voltage divider is periodically connected to sense the output voltage during a first time and is disconnected from sensing during a second time. | 03-17-2016 |
| 20160079181 | TRACEABLE INTEGRATED CIRCUITS AND PRODUCTION METHOD THEREOF - An embodiment of a method for producing traceable integrated circuits includes forming on a wafer of semiconductor material functional regions for implementing specific functionalities of corresponding integrated circuits, forming at least one seal ring around each functional region of the corresponding integrated circuit, and forming on each integrated circuit at least one marker indicative of information of the integrated circuit. Forming on each integrated circuit at least one marker may include forming the at least one marker on at least a portion of the respective seal ring that is visible. | 03-17-2016 |
| 20160079144 | GRAPHENE BASED FILLER MATERIAL OF SUPERIOR THERMAL CONDUCTIVITY FOR CHIP ATTACHMENT IN MICROSTRUCTURE DEVICES - An integrated circuit chip attachment in a microstructure device is accomplished through the use of an adhesive-based material in which graphene flakes are incorporated. This results in superior thermal conductivity. The spatial orientation of the graphene flakes is controlled, for example by adhering polar molecules to the graphene flakes and exposing the flakes to an external force field, so that the graphene flakes have desired orientations under the integrated circuit chip, alongside of the integrated circuit chip and above the integrated circuit chip. | 03-17-2016 |
| 20160079092 | POWER DEVICE HAVING REDUCED THICKNESS - An electronic device includes at least one chip and an insulating body embedding the chip. The electronic device further includes a heat-sink in contact with the chip. The heat-sink includes a plate having a first thickness. A recess is provided in the plate that defines a central portion of the plate having a second thickness less than the first thickness. The chip is mounted to the central region of the heat-sink within the recess. The insulating body includes a surface, such as a mounting surface, including an opening exposing at least a portion of the heat-sink. The device may further include a reophore extending through a side surface of the insulating body, that reophore being in contact with the heat sink. | 03-17-2016 |
| 20160077130 | PROBES FOR TESTING INTEGRATED ELECTRONIC CIRCUITS AND CORRESPONDING PRODUCTION METHOD - Cantilever probes are produced for use in a test apparatus of integrated electronic circuits. The probes are configured to contact corresponding terminals of the electronic circuits to be tested during a test operation. The probe bodies are formed of electrically conductive materials. On a lower portion of each probe body that, in use, is directed to the respective terminal to be contacted, an electrically conductive contact region is formed having a first hardness value equal to or greater than 300 HV; each contact region and the respective probe body form the corresponding probe. | 03-17-2016 |
| 20160076962 | INTEGRATED TRANSDUCER PROVIDED WITH A TEMPERATURE SENSOR AND METHOD FOR SENSING A TEMPERATURE OF THE TRANSDUCER - A pressure sensor includes a body made of semiconductor material having a first type of conductivity and a pressure-sensitive structure having the first type of conductivity defining a suspended membrane. One or more piezoresistive elements having a second type of conductivity (P) are formed in the suspended membrane. The piezoresistive elements form, with the pressure-sensitive structure, respective junction diodes. A temperature sensing method includes: generating a first current between conduction terminals common to the junction diodes; detecting a first voltage value between the common conduction terminals when the first current is supplied; and correlating the detected first voltage value to a value of temperature of the diodes. The temperature value thus calculated can be used for correcting the voltage signal generated at output by the pressure sensor when the latter is operated for sensing an applied outside pressure which deforms the suspended membrane. | 03-17-2016 |
| 20160072435 | POWER OSCILLATOR APPARATUS WITH TRANSFORMER-BASED POWER COMBINING - An oscillator circuit includes first and second oscillators arranged in a series configuration between a supply voltage node and a reference voltage node. The first and second oscillators are configured to receive a synchronizing signal for controlling synchronization in frequency and phase. An electromagnetic network provided to couple the first and the second oscillators includes a transformer with a primary circuit and a secondary circuit. The primary circuit includes a first portion coupled to the first oscillator and second portion coupled to the second oscillator. The first and second portions are connected by a circuit element for reuse of current between the first and second oscillators. The oscillator circuit is fabricated as an integrated circuit device wherein the electromagnetic network is formed in metallization layers of the device. The secondary circuit generates an output power combining power provided from the first and second portions of the primary circuit. | 03-10-2016 |
| 20160072057 | INTEGRATED MAGNETORESISTIVE SENSOR, IN PARTICULAR THREE-AXIS MAGNETORESISTIVE SENSOR AND MANUFACTURING METHOD THEREOF - An integrated magnetoresistive device includes a substrate of semiconductor material that is covered, on a first surface, by an insulating layer. A magnetoresistor of ferromagnetic material extends within the insulating layer and defines a sensitivity plane of the sensor. A concentrator of ferromagnetic material includes at least one arm that extends in a transversal direction to the sensitivity plane and is vertically offset from the magnetoresistor. The concentrator concentrates deflects magnetic flux lines perpendicular to the sensitivity plane so as to generate magnetic-field components directed in a parallel direction to the sensitivity plane. | 03-10-2016 |
| 20160064046 | IDENTIFICATION OF A CONDITION OF A SECTOR OF MEMORY CELLS IN A NON-VOLATILE MEMORY - A non-volatile memory of a complementary type includes sectors of memory cells, with each cell formed by a direct memory cell and a complementary memory cell. Each sector of the non-volatile memory is in a non-written condition when the corresponding memory cells are in equal states and is in a written condition wherein each location thereof stores a first logic value or a second logic value when the memory cells of the location are in a first combination of different states or in a second combination of different states, respectively. A sector is selected and a determination is made as to a number of memory cells in the programmed state and a number of memory cells in the erased state. From this information, the condition of the selected sector is identified from a comparison between the number of memory cells in the programmed state and the number of memory cells in the erased state. | 03-03-2016 |
| 20160049459 | INTEGRATED CIRCUIT COMPRISING AT LEAST AN INTEGRATED ANTENNA - An integrated circuit on a substrate including at least one peripheral portion that surrounds an active area and is realized close to at least one scribe line providing separation with other integrated circuits realized on a same wafer. The integrated circuit includes at least one conductive structure that extends in its peripheral portion on different planes starting from the substrate and realizes an integrated antenna for the circuit. | 02-18-2016 |
| 20160043647 | POWER-SUPPLY CIRCUIT, RELATED TRANSMISSION CIRCUIT, INTEGRATED CIRCUIT, AND METHOD OF TRANSMITTING A SIGNAL - A power-supply circuit includes a transformer with primary and secondary windings, and an energy accumulator on the secondary winding. A circuit monitors the secondary winding and generates a feedback signal that is transferred by a transmission circuit through the secondary winding by selectively transferring energy from the energy accumulator. The transmission circuit includes: a) an electronic switch having a control terminal; and b) a driver circuit for driving the electronic switch. The driver circuit includes a charge-accumulation capacitor connected to the control terminal, and a charge circuit configured to draw energy from the secondary winding and charge the charge-accumulation capacitor. | 02-11-2016 |
| 20160018461 | PROCESS FOR CONTROLLING THE CORRECT POSITIONING OF TEST PROBES ON TERMINATIONS OF ELECTRONIC DEVICES INTEGRATED ON A SEMICONDUCTOR AND CORRESPONDING ELECTRONIC DEVICE - An electrical check executed on wafer tests for the correct positioning or alignment of the probes of a probe card on the pads or bumps of the electronic devices integrated on the wafer. A signal is applied to cause a current to circulate in at least part of a seal ring of at least one of the electronic devices. In a case where the current flows between and through multiple electronic devices, the seal rings of those electronic devices are suitably interconnected to each other by electronic structures that extend through the scribe line between electronic devices. | 01-21-2016 |
| 20160005678 | ELECTRONIC DEVICE COMPRISING AN IMPROVED LEAD FRAME - An electronic device includes a chip and a support element which supports the chip. Leads are provided to be electrically coupled to at least one terminal of the chip. A coupling element is mounted to a free region of the support element that is not occupied by the chip. The coupling element includes a conductive portion electrically connected to at least one lead and to the at least one terminal of the chip to obtain an electrical coupling. | 01-07-2016 |
| 20160003757 | GAS MEASUREMENT DEVICE AND MEASUREMENT METHOD THEREOF - A gas measurement device measures gas using a gas sensor including a sense resistance exposed to the gas and a reference resistance not exposed to the gas. The gas measurement device applies a first current value and a second current value to the sensor. A detector functions to detect a first resistance variation and a second resistance variation of the sense resistance exposed to the gas with respect to the reference resistance as a function of the first current value and the second current value, respectively. The resistance variation dependent on relative humidity is then determined as a function of the first and second resistance variations and a first constant. The resistance variation dependent on gas content is then determined as a function of the first and second resistance variations and a second (different) constant. | 01-07-2016 |
| 20150381177 | COMMUNICATION CELL FOR AN INTEGRATED CIRCUIT OPERATING IN CONTACT AND CONTACTLESS MODE, ELECTRONIC CHIP COMPRISING THE COMMUNICATION CELL, ELECTRONIC SYSTEM INCLUDING THE CHIP, AND TEST APPARATUS - A communication cell for an integrated circuit includes a physical interface configured to supply an input signal (for example, a capacitive signal or an ohmic signal). A receiver circuit operates to receive the capacitive signal and generate a first intermediate signal. A buffer circuit operates to receive the ohmic signal and generate a second intermediate signal. An output stage including a selector device (for example, a multiplexer) configured to receive the first and second intermediate signals and selectively pass only one of those signals to the integrated circuit based on operating condition. The input signal may further be an inductive signal, with the output stage further functioning to selectively pass that signal based on operating condition. | 12-31-2015 |
| 20150381125 | POWER AMPLIFIER - A power amplifier includes a clamping circuit configured to provide a clamped voltage from a power supply; an amplifier pair having first inputs coupled to the clamping circuit, second inputs and an output for providing an amplified signal; and a biasing circuit coupled between the clamping circuit and the second inputs. The biasing circuit is configured to adjust input bias voltages of the amplifier pair such that the bias voltage of the output of the amplifier pair varies proportionally to a change of the power supply. | 12-31-2015 |
| 20150380966 | BATTERY CHARGER - A battery charger includes an input supply terminal configured to receive a supply signal and a battery terminal configured to be connected to a battery. A supply switching circuit is arranged between the battery terminal and the input supply terminal. A control device generates a control signal to control operation of the supply switching circuit. A fuel gauge device provide a digital estimation of a voltage signal across the battery. A correction device modifies the control signal in response to the digital estimation of the voltage signal across the battery if that digital estimation is outside of a value range between two thresholds. | 12-31-2015 |
| 20150380801 | PLANAR BALUN TRANSFORMER DEVICE - An electric transformer device (balun) is formed on a support plate having a first base face and an opposite second base face. The balun includes a first port ( | 12-31-2015 |
| 20150377813 | SEMICONDUCTOR GAS SENSOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor gas sensor device includes a first cavity that is enclosed by opposing first and second semiconductor substrate slices. At least one conducting filament is provided to extend over the first cavity, and a passageway is provided to permit gas to enter the first cavity. The sensor device may further including a second cavity that is hermetically enclosed by the opposing first and second semiconductor substrate slices. At least one another conducting filament is provided to extend over the second cavity. | 12-31-2015 |
| 20150364934 | METHOD OF OPERATING A BATTERY-CHARGER DEVICE, AND CORRESPONDING DEVICE - A battery charger operates in a current regulation mode and a voltage regulation mode. A value of the voltage on the battery being charged is sensed and compared against a target voltage value. The current regulation mode is active during charging while the sensed voltage is less than the target voltage value. When the sensed voltage reaches the target voltage value, the voltage regulation mode is enabled and the current regulation mode is inhibited. | 12-17-2015 |
| 20150364455 | STACK OF INTEGRATED-CIRCUIT CHIPS AND ELECTRONIC DEVICE - A stack of chips is formed by a first integrated-circuit chip and a second integrated-circuit chip. The chips have opposing faces which are separated from each other by an interposed spacer. The spacer is fastened by adhesion to only one of the opposing faces. The opposing faces are fastened to each other by a local adhesive which is separate from spacer. | 12-17-2015 |
| 20150364409 | ELECTRONIC DEVICE WITH DIE BEING SUNK IN SUBSTRATE - An electronic device includes a circuit integrated on a die having front and back surfaces with die terminals on the front surface. The die is embedded in a package including substrate of thermally conductive material with front and back surfaces and a through-hole. The die is sunk in the through-hole. A first insulating material layer covers the die front surface and the package front surface with first windows for accessing die terminals. Package terminals and package track are arranged on the first insulating layer. A second insulating material layer covers the first insulating layer and the package tracks with second windows for accessing the package terminals. | 12-17-2015 |
| 20150364249 | INTEGRATED TRANSFORMER - An integrated transformer includes a primary winding and a secondary winding each having a spiral planar arrangement coils. A dielectric portion of dielectric material is interposed between the primary winding and the secondary winding. A field plate winding is electrically coupled with the primary winding. The field plate winding includes at least one field plate coil having a first lateral extension greater than a second lateral extension of a primary outer coil of the primary winding. The field plate coil is superimposed in plan view to the primary outer coil of the primary winding. | 12-17-2015 |
| 20150362522 | MEMS RESONANT ACCELEROMETER HAVING IMPROVED ELECTRICAL CHARACTERISTICS - A MEMS resonant accelerometer is disclosed, having: a proof mass coupled to a first anchoring region via a first elastic element so as to be free to move along a sensing axis in response to an external acceleration; and a first resonant element mechanically coupled to the proof mass through the first elastic element so as to be subject to a first axial stress when the proof mass moves along the sensing axis and thus to a first variation of a resonant frequency. The MEMS resonant accelerometer is further provided with a second resonant element mechanically coupled to the proof mass through a second elastic element so as to be subject to a second axial stress when the proof mass moves along the sensing axis, substantially opposite to the first axial stress, and thus to a second variation of a resonant frequency, opposite to the first variation. | 12-17-2015 |
| 20150355267 | SYSTEM AND METHOD FOR ELECTRICAL TESTING OF THROUGH SILICON VIAS (TSVs) - A testing system for carrying out electrical testing of at least one first through via forms an insulated via structure extending only part way through a substrate of a first body of semiconductor material. The testing system has a first electrical test circuit integrated in the first body and electrically coupled to the insulated via structure. The first electrical test circuit enables detection of at least one electrical parameter of the insulated via structure. | 12-10-2015 |
| 20150336207 | ELECTRONIC COMMUNICATIONS DEVICE WITH ANTENNA AND ELECTROMAGNETIC SHIELD - An electronic communications device includes a body of semiconductor material with an integrated electronic circuit, an inductive element, and a capacitive element. The capacitive element is formed by a first electrode and a second electrode positioned between the inductive element and the integrated electronic circuit. Tuning of the device circuitry is accomplished by energizing the inductive/capacitive elements, determining resonance frequency, and using a laser trimming operation to alter the structure of one or more of the first electrode, second electrode or inductive element and change the resonance frequency. | 11-26-2015 |
| 20150333713 | CONTROL CIRCUIT FOR LOW NOISE AMPLIFIER AND RELATED DIFFERENTIAL AND SINGLE-ENDED AMPLIFICATION DEVICES - A circuit includes a first pair of transistors connected in parallel between a first node and a second node with a diode-connected transistor coupled to the second node. A second pair of transistors has current terminals connected at a third node. A first and second current sink transistors are connected in a current mirror configuration with the diode-connected transistor and further coupled to the third node. A first differential amplifier has an output coupled to control terminals of the first and third transistors and an input coupled to a further current node of the third transistor. A second differential amplifier has an output coupled to control terminals of the second and fourth transistors and an input coupled to a further current node of the fourth transistor. | 11-19-2015 |
| 20150323944 | CURRENT MODULATION CIRCUIT - A modulated digital input signal is passed through a conditioning circuit to generate a first input signal. An error amplifier circuit receives the first input signal and a second input signal, and controls the operation of a MOS transistor to generate an output signal that is current modulated. The output signal is sensed to generate a feedback signal. A switching circuit selectively applies the feedback signal as the second input signal in response to a transition of the modulated digital input signal from a first logic state to a second logic state. The switching circuit alternatively selectively applies a fixed reference signal as the second input signal to the error amplifier in response to a transition of the modulated digital input signal from the second logic state to the first logic state. | 11-12-2015 |
| 20150303816 | POWER SWITCHING CONVERTER - A circuit includes a transformer with a primary, secondary, and auxiliary. A first control circuit actuates a first switch circuit based on a wake-up signal to cause the primary to transmit power to the secondary. A second control circuit actuates a second switch circuit based on an output voltage at the secondary being less than a threshold to generate the wake-up signal to the secondary for transmission to the auxiliary. The second switch circuit has a transistor with a source coupled to a reference node, a gate coupled to the second control circuit. A first diode has an anode coupled to the source and a cathode coupled to the drain, and blocks flow of current from the drain to the source. A second diode has an anode coupled to the substrate and a cathode coupled to the drain, and blocks flow of current from the drain to the substrate. | 10-22-2015 |
| 20150301106 | SENSING STRUCTURE OF ALIGNMENT OF A PROBE FOR TESTING INTEGRATED CIRCUITS - A sensing structure is presented for use in testing integrated circuits on a substrate. The sensing structure includes a probe region corresponding to a conductive region for connecting to the integrated circuit. A first sensing region at least partially surrounds the probe region. A plurality of sensing elements connects in series such that a first of the plurality of sensing elements has two terminals respectively connected to the first sensing region and the probe region. And a second of the plurality of sensing elements has two terminals respectively connected to the probe region and a first reference potential. | 10-22-2015 |
| 20150294942 | INDEXING OF ELECTRONIC DEVICES DISTRIBUTED ON DIFFERENT CHIPS - A method for indexing electronic devices includes: forming first chips in a first wafer, forming second chips in a second wafer, forming the electronic devices by coupling each first chip with a corresponding second chip, and forming an index on each electronic device. The index is indicative of a position of the corresponding first chip in the first wafer. The step of forming an index includes forming a first portion of the index on the first chip, and forming a second portion of the index on the second chip. | 10-15-2015 |
| 20150284243 | TEMPERATURE-COMPENSATED MICRO-ELECTROMECHANICAL DEVICE, AND METHOD OF TEMPERATURE COMPENSATION IN A MICRO-ELECTROMECHANICAL DEVICE - A micro-electromechanical device includes a semiconductor substrate, in which a first microstructure and a second microstructure of reference are integrated. The first microstructure and the second microstructure are arranged in the substrate so as to undergo equal strains as a result of thermal expansions of the substrate. Furthermore, the first microstructure is provided with movable parts and fixed parts with respect to the substrate, while the second microstructure has a shape that is substantially symmetrical to the first microstructure but is fixed with respect to the substrate. By subtracting the changes in electrical characteristics of the second microstructure from those of the first, variations in electrical characteristics of the first microstructure caused by changes in thermal expansion or contraction can be compensated for. | 10-08-2015 |
| 20150280586 | POWER SWITCHING CONVERTER - A power switching converter includes a switch coupled to an input terminal through a primary winding of a transformer and a control circuit configured to drive the switch to provide a regulated output signal at a secondary winding of the transformer. A wake up circuit is provided to force the switching-on of the switch when the power converter enters in a burst mode. The wake up circuit includes a transmitting section coupled to the secondary winding and a receiving section coupled to an auxiliary winding of the transformer and the control circuit. The transmitting section is configured to provide a wake up signal communicated in a wireless manner to the receiving section when the output signal falls below a threshold value. | 10-01-2015 |
| 20150276894 | HALL-EFFECT-BASED MAGNETIC FIELD SENSOR HAVING AN IMPROVED OUTPUT BANDWIDTH - A magnetic field sensor formed by a Hall cell having a first, second, third and fourth conduction nodes electrically coupled together by resistive paths. Flowing between the first and second conduction nodes is a control current. In the presence of a magnetic field, a difference of potential due to the Hall effect is generated between the third and fourth conduction nodes. An operational amplifier has an inverting input terminal coupled to the fourth conduction node, a non-inverting input terminal biased at the voltage at the third conduction node, and an output terminal coupled in feedback mode to the inverting input by a feedback resistor. The current generated in feedback through the feedback resistor generates a voltage indicating unbalancing, due to the Hall effect, between the third and fourth conductive nodes, and consequently indicates the intensity of the magnetic field that acts upon the Hall cell. | 10-01-2015 |
| 20150268133 | SAFE SCHEDULER FOR FINITE STATE DETERMINISTIC APPLICATION - A safety system monitors faults in an embedded control system. The embedded control system is modeled to produce one or more model check values by calculating how many clock cycles will pass between an initialization time point and at least one event time point for a specific event. The initialization time point is a certain point in an initialization function of a scheduler in the embedded control system. The at least one event time point is an expected number of clock cycles to pass before a specific event occurs. In operation, the embedded control system is initialized, a current clock cycle counter value is retrieved at a certain point in the initialization, and either an occurrence or an absence of an occurrence of a scheduled event is recognized. A current clock cycle value is recorded upon the recognition, and a mathematic check value is produced from the clock cycle value stored at the certain point in the initialization and the clock cycle value recorded upon the recognition. Subsequently, the model check value is compared to the mathematic check value, and action is taken based on the comparison. | 09-24-2015 |
| 20150260542 | ENERGY SCAVENGING STEP-COUNTER DEVICE AND RELATED STEP-COUNTING METHOD - A step-detection device for detecting the steps taken by a user (for counting) includes a transducer that generates an electrical transduction signal as a function of step mechanical activity. An energy scavenging system, coupled to the transducer, generates electrical energy starting from the mechanical activity in order to supply an output supply signal in response to the electrical transduction signal. A voltage-regulator generates a regulated supply signal from the output supply signal. A transmission stage, supplied by the voltage-regulating stage, initiates a wireless transmission indicative of step detection, that wireless transmission causing an increment of a step count at a remote location. The transmission stage makes the wireless transmission when the regulated supply signal exceeds a first threshold. Completion of the wireless transmission is indicative of the occurrence of a step. | 09-17-2015 |
| 20150255341 | METHOD FOR MANUFACTURING A TRANSISTOR WITH SELF-ALIGNED TERMINAL CONTACTS - A MOS transistor includes a semiconductor layer with a drain region and a body region. A first insulating layer is disposed over the semiconductor layer, a gate-precursor layer is disposed over the first insulating layer, a second insulating layer disposed over the first insulating layer and a third insulating layer disposed over the second insulating layer. A source opening extends through the third insulating layer, the second insulating layer, the gate-precursor layer, and the first insulating layer. An implant through the source opening forms a source-precursor region in the semiconductor layer. The source opening is then lined and an body contact opening is made through the liner, the source-precursor region and into the body region. An implant through the body contact opening forms the body contact region below the source-precursor. The body contact opening is then filled with a metal. | 09-10-2015 |
| 20150236683 | HIGH VOLTAGE COMPARISON CIRCUIT - A high voltage comparison circuit includes an input stage generating an intermediate signal as a result of a comparison between an input signal and a first voltage reference and an output stage configured to generate an output signal referenced to a second voltage reference (different from the first voltage reference) in response to the intermediate signal. | 08-20-2015 |
| 20150235929 | ELECTRONIC DEVICE WITH HEAT DISSIPATER - An electronic device includes an integrated circuit chip mounted to a heat slug. The heat slug has a peripheral region having first thickness along a first direction, the peripheral region surrounding a recess region (having a second, smaller, thickness along the first direction) that defines a chip mounting surface along a second direction perpendicular to the first direction. The recess region defines side borders and a nook extends into the heat slug along the side borders. An insulating body embeds the integrated circuit one chip and heat slug. Material of the insulating body fills the nook. | 08-20-2015 |
| 20150234416 | ENERGY HARVESTING INTERFACE WITH IMPROVED IMPEDANCE MATCHING, METHOD FOR OPERATING THE ENERGY HARVESTING INTERFACE, AND ENERGY HARVESTING SYSTEM USING THE ENERGY HARVESTING INTERFACE - An energy harvesting interface receives an electrical signal from an inductive transducer and supplies a supply signal. The interface includes an input branch with a first switch and a second switch connected together in series between a first input terminal and an output terminal. The interface further includes a third switch and a fourth switch connected together in series between a second input terminal and the output terminal. A first electrical-signal-detecting device, coupled across the second switch, detects a first threshold value of an electric storage current in the inductor of the transducer. A second electrical-signal-detecting device, coupled across the fourth switch, detects whether the electric supply current that flows through the fourth switch reaches a second threshold value lower than the first threshold value. The second threshold is derived from the electric storage current. | 08-20-2015 |
| 20150229222 | POWER SUPPLY APPARATUS FOR AN ELECTRICAL APPLIANCE - A power supply apparatus includes a power supply circuit and a power-on circuit. The power-on circuit detects a remotely transmitted control signal and causes a transition of the power supply circuit to a turned on state. The power-on circuit includes a transducer configured to provide a power-on signal in response to the remote control signal. The transducer triggers transition to the turned on state through a switch driven by the power-on signal output from the transducer and arranged to supply a power supply circuit enable signal. A DC blocking capacitor is connected between an output of the transducer and a control terminal of the switch. | 08-13-2015 |
| 20150228589 | INDEXING OF ELECTRONIC DEVICES WITH MULTIPLE WEIGHT MARKERS - A die has a positional location in a wafer defined by first and second coordinates, the first and second coordinates identifying a respective horizontal and vertical location where the die was formed. An index formed on the die has a first comb structure of a first contiguous arrangement of first dots, and a second comb structure of a second contiguous arrangement of second dots. A first marker at a selected one of the first dots indicates a first digit of the first coordinate, and a first additional marker at a selected one of the first dots indicates a second digit of the first coordinate. A second marker at a selected one of the second dots indicates a first digit of the second coordinate, and a second additional marker at a selected one of the second dots indicates a second digit of the second coordinate. | 08-13-2015 |
| 20150228359 | FAILURE DIAGNOSIS CIRCUIT - A failure diagnosis circuit includes a multiplexer and a controller. The multiplexer receives address signals, and selectively outputs one of the address signals to an addressable module in response to a selecting signal. The controller generates a first one of address signals and the selecting signal. A built-in self-test circuit generates the second address signal. The addressable module includes addressable components responsive to the address signal. The controller processes the output of the addressable module responsive to the address signal to make a failure diagnosis. The built-in self-test circuit performs signature analysis on the read out output of the addressable module. | 08-13-2015 |
| 20150207336 | POWER RECEIVER, WIRELESS POWER SYSTEM AND RELATED METHOD OF TRANSMITTING INFORMATION WITH A POWER RECEIVER - A power receiver includes a resonant circuit generating an internal supply voltage. A voltage rectification circuit receives the internal supply voltage and generate a corresponding rectified voltage. A voltage regulator receives the rectified voltage and a modulation signal and is configured to generate a corresponding regulated voltage. A controlled voltage-to-current converter receives the regulated voltage and the modulation signal. The converter operates to deliver, through an output line of the power receiver, an output current having a DC value corresponding to the DC value of said regulated voltage and having an AC value corresponding to said modulation signal. | 07-23-2015 |
| 20150194876 | WIRELESSLY ACTIVATED POWER SUPPLY FOR AN ELECTRONIC DEVICE - A power supply includes a power supply circuit and a power-on circuit controlling transitioning of the power supply circuit to a turned-on state. The power-on circuit includes a code driver, a controller coupled to the power supply circuit and code driver, and a transducer to detect a wireless control signal and generate an enable signal based thereupon. A transistor has a first conduction terminal coupled to the code driver, a second conduction terminal coupled to the controller, and a control terminal coupled to the transducer to receive the enable signal so the transistor switches based thereupon. The code driver detects a code embedded in the wireless control signal based upon switching of the transistor, and generates a power on signal for the controller based upon the code. The controller causes the power supply circuit to transition from the turned-off state to the turned-on state based upon the power on signal. | 07-09-2015 |
| 20150175410 | PROCESS FOR MANUFACTURING A MICROMECHANICAL STRUCTURE HAVING A BURIED AREA PROVIDED WITH A FILTER - A process for manufacturing a micromechanical structure envisages: forming a buried cavity within a body of semiconductor material, separated from a top surface of the body by a first surface layer; and forming an access duct for fluid communication between the buried cavity and an external environment. The method envisages: forming an etching mask on the top surface at a first access area; forming a second surface layer on the top surface and on the etching mask; carrying out an etch such as to remove, in a position corresponding to the first access area, a portion of the second surface layer, and an underlying portion of the first surface layer not covered by the etching mask until the buried cavity is reached, thus forming both the first access duct and a filter element, set between the first access duct and the same buried cavity. | 06-25-2015 |
| 20150140767 | PROCESS FOR MANUFACTURING DEVICES FOR POWER APPLICATIONS IN INTEGRATED CIRCUITS - A MOS transistor for power applications is formed in a substrate of semiconductor material by a method integrated in a process for manufacturing integrated circuits which uses an STI technique for forming insulating regions. The method includes the phases of forming an insulating element on a top surface of the substrate and forming a control electrode on a free surface of the insulating element. The insulating element insulates the control electrode from the substrate. The insulating element includes a first portion and a second portion. The extension of the first portion along a first direction perpendicular to the top surface is lower than the extension of the second portion along such first direction. The phase of forming the insulating element includes generating the second portion by locally oxidizing the top surface. | 05-21-2015 |
| 20150140750 | PROCESS FOR MANUFACTURING INTEGRATED DEVICE INCORPORATING LOW-VOLTAGE COMPONENTS AND POWER COMPONENTS - An integrated device includes: a semiconductor body having a first, depressed, portion and second portions which project from the first portion; a STI structure, extending on the first portion of the semiconductor body, which delimits laterally the second portions and has a face adjacent to a surface of the first portion; low-voltage CMOS components, housed in the second portions, in a first region of the semiconductor body; and a power component, in a second region of the semiconductor body. The power component has at least one conduction region, formed in the first portion of the semiconductor body, and a conduction contact, coupled to the conduction region and traversing the STI structure in a direction perpendicular to the surface of the first portion of the semiconductor body. | 05-21-2015 |
| 20150135846 | PACKAGE, MADE OF BUILDING MATERIAL, FOR A PARAMETER MONITORING DEVICE, WITHIN A SOLID STRUCTURE, AND RELATIVE DEVICE - A package for a device to be inserted into a solid structure may include a building material that includes particles of one of micrometric and sub-micrometric dimensions. The device may include an integrated detection module having at least one integrated sensor and the package arranged to coat at least one portion of the device including the integrated detection module. A method aspect includes a method of manufacturing the device. A system aspect is for monitoring parameters in a solid structure that includes the device. | 05-21-2015 |
| 20150054088 | INTEGRATED DEVICE WITH RAISED LOCOS INSULATION REGIONS AND PROCESS FOR MANUFACTURING SUCH DEVICE - An integrated device includes a semiconductor body including an STI insulating structure that laterally delimits first active areas and at least one second active area in a low-voltage region and in a power region of the semiconductor body, respectively. Low-voltage CMOS components are housed in the first active areas. A power component, formed in the second active area, includes a source region, a body region, a drain-contact region, and at least one LOCOS insulation region. The insulating region is arranged between the body region and the drain-contact region and has a prominent portion that emerges from a surface of the semiconductor body, and an embedded portion inside it. The prominent portion of the LOCOS insulation region has a volume greater than that of the embedded portion. | 02-26-2015 |
| 20150049791 | REACQUISITION METHOD OF A CDMA MODULATED SATELLITE SIGNALS AND RECEIVING APPARATUS IMPLEMENTING THE METHOD - Acquiring a satellite signal, by, receiving a CDMA-modulated signal; generating a plurality of CDMA-type test signals comprising a reference test signal having a first chip duration, and a plurality of test signals delayed/anticipated of a corresponding time offset from the respective test reference signal, less than the chip duration; calculating correlations between the CDMA-modulated signal and the plurality of test signals for obtaining a plurality of correlation results; selecting, based on the correlation results, acquisition parameters associated to a candidate satellite signal; acquiring or rejecting the acquisition parameters selected based on the correlation results. | 02-19-2015 |
| 20150044110 | MICROFLUIDIC DEVICE WITH HYDROPHOBIC SURFACE MODIFICATION LAYER AND MANUFACTURING METHOD THEREOF - A microfluidic device includes a support body having a first surface and a second surface opposite to one another. The first surface is hydrophilic. A surface modification layer extends over the first surface of the support body. At least one opening is formed to extend through the surface modification layer and expose a portion of the first surface. The surface modification layer is hydrophobic. In particular, the surface modification layer is made of a photodefinible material chosen from among: an epoxy resin, a polyamide, and a photocurable siloxane-based polymer. The openings are functionalized using probe molecules designed to bind with specific target molecules to be detected. | 02-12-2015 |
| 20150022131 | ELECTRIC CIRCUIT AND METHOD FOR ESTIMATING THE ANGULAR POSITION OF A ROTOR OF AN ELECTRIC MOTOR, AND DEVICE FOR CONTROLLING AN ELECTRIC MOTOR - Electric circuit for estimating the angular position of a rotor of an electric motor, including: a sensing module configured to receive at least one electric signal representative of a drive current of the electric motor and to generate a measurement signal indicative of a switching of the at least one electric signal and a switching index indicative of the type of switching, rising or falling, of the at least one electric signal; and a computing module configured to supply, from the measurement signal and switching index a position signal representative of an angular position of the electric motor rotor. | 01-22-2015 |
| 20150020040 | METHOD FOR AUTOMATIC DESIGN OF AN ELECTRONIC CIRCUIT, CORRESPONDING SYSTEM AND COMPUTER PROGRAM PRODUCT - A method for the automatic design of an electronic circuit includes operations for evaluation of the thermal effects in the electronic circuit. The method generates a layout of the electronic circuit. Abstract data at the substrate level associated to the layout of the electronic circuit is then generated. A grid of partitioning is generated with respect to a view regarding the aforesaid abstract into meshes and nodes. The grid is applied to the substrate. On the basis of the grid (TG), a list of nodes or netlist representing a thermal network that represents the thermal behavior of the substrate or of its portions or elements is extracted. The netlist is useful in simulation operations, in particular of a SPICE type, for making an evaluation of thermal effects in the electronic circuit. | 01-15-2015 |
| 20150019194 | METHOD FOR AUTOMATIC DESIGN OF AN ELECTRONIC CIRCUIT, CORRESPONDING SYSTEM AND COMPUTER PROGRAM PRODUCT - A method for automatic design of a circuit evaluates thermal effects and electrical effects in a coupled way. A description of the circuit is obtained in terms of a list of simulator nodes or netlist. Using the description, the electrical behavior of the circuit and the thermal behavior of the circuit is simulated. The simulation includes configuring the simulation operation for operating with descriptions of models or sub-circuits of the circuit that are defined using a thermal node. An equivalent current generator is connected to the thermal node to force an equivalent current representing dissipated power. A voltage that is produced on the thermal node is associated with an increase in temperature of the model or sub-circuit with respect to the global temperature. | 01-15-2015 |
| 20150008519 | POWER INTEGRATED DEVICE HAVING SURFACE CORRUGATIONS - According to a process for manufacturing an integrated power device, projections and depressions are formed in a semiconductor body that extend in a first direction and are arranged alternated in succession in a second direction, transversely to the first direction. Further provided are a first conduction region and a second conduction region. The first conduction region and the second conduction region define a current flow direction parallel to the first direction, along the projections and the depressions. To form the projections and the depressions, portions of the semiconductor body that extend in the first direction and correspond to the depressions, are selectively oxidized. | 01-08-2015 |
| 20140354201 | SWITCHING CONTROLLER FOR ELECTRIC MOTORS AND RELATED METHOD OF CONTROLLING ELECTRIC MOTORS - A switching controller of a poly-phase electric motor may generate, in a fully digital manner, a replica of the phase current and/or of the phase (star) voltage of one or more windings of the motor. The switching controller may use digital signals already available for driving the motor to reconstruct a replica of the phase current or the phase voltage, and thereby avoid the need for dedicated analog components for phase current or phase voltage determination. | 12-04-2014 |
| 20140353785 | LOW-CONSUMPTION, AMR-TYPE, INTEGRATED MAGNETORESISTOR - An integrated magnetoresistive sensor ( | 12-04-2014 |
| 20140353780 | DETECTION STRUCTURE FOR A MEMS ACOUSTIC TRANSDUCER WITH IMPROVED ROBUSTNESS TO DEFORMATION - A micromechanical structure for a MEMS capacitive acoustic transducer, has: a substrate of semiconductor material; a rigid electrode, at least in part of conductive material, coupled to the substrate; a membrane, at least in part of conductive material, facing the rigid electrode and coupled to the substrate, which undergoes deformation in the presence of incident acoustic pressure waves and is arranged between the substrate and the rigid electrode and has a first surface and a second surface, in fluid communication, respectively, with a first chamber and a second chamber, the first chamber being delimited at least in part by a first wall portion and by a second wall portion formed by the substrate, and the second chamber being delimited at least in part by the rigid electrode; and a stopper element, connected between the first and second wall portions for limiting the deformations of the membrane. At least one electrode-anchorage element couples the rigid electrode to the stopper element. | 12-04-2014 |
| 20140353775 | WAFER-LEVEL PACKAGING OF INTEGRATED DEVICES, AND MANUFACTURING METHOD THEREOF - A wafer-level packaging, comprising: a first semiconductor body integrating a MEMS structure; a second semiconductor body, including a surface electrical-contact region and an ASIC coupled to the MEMS structure and to said electrical-contact region; a first coating layer, made of resin, which englobes and protects the first body, the second body, and the electrical-contact region; at least one first conductive through via, which extends through the first coating layer in an area corresponding, and electrically coupled, to the first electrical-contact region; an electrical-contact pad, which extends over the first coating layer, electrically coupled to the first conductive through via; a third semiconductor body, integrating an electronic circuit, glued on the first coating layer; a second coating layer, made of resin, which englobes and protects the third body; at least one second conductive through via, which extends completely through the second coating layer in an area corresponding, and electrically coupled, to the electrical-contact pad; and a further electrical-contact pad electrically coupled to the second conductive through via. | 12-04-2014 |
| 20140352819 | MEMBRANE MICROFLUIDIC VALVE AND PROCESS FOR MANUFACTURING A MEMBRANE MICROFLUIDIC VALVE - A microfluidic valve includes: a first structural layer and a second structural layer; a microfluidic circuit having a first microfluidic conduit and a second microfluidic conduit, which are defined in a superficial portion of the first structural layer, are adjacent, and are separated by a wall; a membrane set between the first structural layer and the second structural layer and delimiting the microfluidic circuit on one side; and a recess containing a gaseous fluid in the second structural layer. The membrane is movable in response to an actuation stimulus between a closed position, in which the first and second microfluidic conduits are fluidly decoupled, and an open position, in which the membrane is at least in part retracted into the recess and the first and second microfluidic conduits are fluidly coupled by means of a fluidic passage defined between the wall and the membrane. | 12-04-2014 |
| 20140348239 | PANNING FILTER DEVICE, CORRESPONDING METHOD AND COMPUTER PROGRAM PRODUCT - A panning device for processing relative motion vectors and absolute motion vectors obtained from a video sequence, includes: a panning filter module, such as a high-pass IIR filter, for subjecting relative motion vectors to panning processing, an adder module for adding the relative motion vectors subjected to panning in the panning filter module to absolute motion vectors to obtain respective summed values of motion vectors, a clipping module for subjecting the summed values of motion vectors obtained in the adder module to clipping according to a selected cropping window for obtaining final output absolute motion vectors, a first leak integrator arranged after the panning filter module, and a second leak integrator arranged after the clipping module. | 11-27-2014 |
| 20140347244 | ELECTRONIC DEVICE FOR ELECTROMAGNETIC EXPANSION AND CONCENTRATION - An electronic device for electromagnetic expansion and concentration is described, including: —a module to be monitored including a first antenna and an integrated control circuitry, the first antenna being electrically coupled to the integrated control circuitry; an electromagnetic expansion and concentration module comprising a second antenna configured to communicate with a remote antenna of an external data collection and control device, relative to the electromagnetic expansion and concentration module, by an electromagnetic coupling, said electromagnetic expansion and concentration module comprising a third antenna electrically coupled to said second antenna, said third antenna being configured to communicate with said first antenna of the module to be monitored by a near-field magnetic coupling. The second antenna is configured to communicate with said remote antenna, relative to the electromagnetic expansion and concentration module by a far-field electromagnetic coupling. The electromagnetic expansion and concentration module further comprises a fourth antenna electrically coupled between said second antenna and said third antenna, said fourth antenna being configured to communicate with a further remote antenna of a further external data collection and control device, relative to the electromagnetic expansion and concentration module by a near-field magnetic coupling. | 11-27-2014 |
| 20140346588 | SUPERJUNCTION POWER DEVICE AND MANUFACTURING METHOD - A method for manufacturing a semiconductor power device, comprising the steps of: forming a trench in a semiconductor body having a first type of conductivity; partially filling the trench with semiconductor material via epitaxial growth so as to obtain a first column having a second type of conductivity and having an internal cavity. The epitaxial growth includes simultaneously supplying a gas containing dopant ions of the second type of conductivity, hydrochloric acid HCl in gaseous form and dichlorosilane DCS in gaseous form, so that the ratio between the amount of HCl and the amount of DCS has a value of from 3.5 to 5.5. | 11-27-2014 |
