| STMicroelectronics, Inc. Patent applications |
| Patent application number | Title | Published |
|---|
| 20160133736 | SILICON CARBIDE STATIC INDUCTION TRANSISTOR AND PROCESS FOR MAKING A SILICON CARBIDE STATIC INDUCTION TRANSISTOR - A static induction transistor is formed on a silicon carbide substrate doped with a first conductivity type. First recessed regions in a top surface of the silicon carbide substrate are filled with epitaxially grown gate regions in situ doped with a second conductivity type. Epitaxially grown channel regions in situ doped with the first conductivity type are positioned between adjacent epitaxial gate regions. Epitaxially grown source regions in situ doped with the first conductivity type are positioned on the epitaxial channel regions. The bottom surface of the silicon carbide substrate includes second recessed regions vertically aligned with the channel regions and silicided to support formation of the drain contact. The top surfaces of the source regions are silicided to support formation of the source contact. A gate lead is epitaxially grown and electrically coupled to the gate regions, with the gate lead silicided to support formation of the gate contact. | 05-12-2016 |
| 20160118305 | PROCESS FOR INTEGRATED CIRCUIT FABRICATION INCLUDING A LINER SILICIDE WITH LOW CONTACT RESISTANCE - An integrated circuit includes a substrate supporting a transistor having a source region and a drain region. A high dopant concentration delta-doped layer is present on the source region and drain region of the transistor. A set of contacts extend through a pre-metal dielectric layer covering the transistor. A silicide region is provided at a bottom of the set of contacts. The silicide region is formed by a salicidation reaction between a metal present at the bottom of the contact and the high dopant concentration delta-doped layer on the source region and drain region of the transistor. | 04-28-2016 |
| 20160112598 | APPARATUS FOR FORMING DIGITAL IMAGES - A method and apparatus for acquiring a corrected digital image of an object includes a digital camera operable to capture a plurality of color component images, an imager body and a support arm. The support arm is coupled to the imager body and adapted to support the digital camera. An image processor is provided to produce corrected color component images and an image combiner is provided to combine the corrected color component images to form the corrected digital image. The camera is moveable to more than one position to enable to formation of three-dimensional images or images with increased depth of focus. | 04-21-2016 |
| 20160104644 | PROCESS FOR INTEGRATED CIRCUIT FABRICATION INCLUDING A UNIFORM DEPTH TUNGSTEN RECESS TECHNIQUE - Dummy gates are removed from a pre-metal layer to produce a first opening (with a first length) and a second opening (with a second length longer than the first length). Work function metal for a metal gate electrode is provided in the first and second openings. Tungsten is deposited to fill the first opening and conformally line the second opening, thus leaving a third opening. The thickness of the tungsten layer substantially equals the length of the first opening. The third opening is filled with an insulating material. The tungsten is then recessed in both the first and second openings using a dry etch to substantially a same depth from a top surface of the pre-metal layer to complete the metal gate electrode. Openings left following the recess operation are then filled with a dielectric material forming a cap on the gate stack which includes the metal gate electrode. | 04-14-2016 |
| 20160099696 | FIXED GAIN AMPLIFIER CIRCUIT - An instrumentation amplifier includes first and second resistors for gain setting. The operational amplifiers within the instrumentation amplifier include selectively enabled current drive sources coupled to the amplifier output. The first and second resistors have variable resistances. A control circuit is configured to select the variable resistances of the first and second resistors to implement a fixed gain for the instrumentation amplifier and further selectively enable the current drive sources. The control circuit receives an indication of a downstream programmable gain (for example, from a downstream programmable gain amplifier). The variable resistances of the first and second resistors are selected to be scaled inversely with respect to the downstream programmable gain and the current drive sources are enabled proportionately with respect to the downstream programmable gain. | 04-07-2016 |
| 20160070060 | METHOD FOR THE FORMATION OF NANO-SCALE ON-CHIP OPTICAL WAVEGUIDE STRUCTURES - A strip of sacrificial semiconductor material is formed on top of a non-sacrificial semiconductor material substrate layer. A conformal layer of the non-sacrificial semiconductor material is epitaxially grown to cover the substrate layer and the strip of sacrificial semiconductor material. An etch is performed to selectively remove the strip of sacrificial semiconductor material and leave a hollow channel surrounded by the conformal layer and the substrate layer. Using an anneal, the conformal layer and the substrate layer are reflowed to produce an optical waveguide structure including the hollow channel. | 03-10-2016 |
| 20160065161 | FREQUENCY DOMAIN MULTIBAND DYNAMICS COMPRESSOR WITH SPECTRAL BALANCE COMPENSATION - A multiband dynamics compressor implements a solution for minimizing unwanted changes to the long-term frequency response. The solution essentially proposes undoing the multiband compression in a controlled manner using much slower smoothing times. In this regard, the compensation provided acts more like an equalizer than a compressor. What is applied is a very slowly time-varying, frequency-dependent post-gain (make-up gain) that attempts to restore the smoothed long-term level of each compressor band. | 03-03-2016 |
| 20160064647 | SIZE-CONTROLLABLE OPENING AND METHOD OF MAKING SAME - A support structure includes an internal cavity. An elastic membrane extends to divide the internal cavity into a first chamber and a second chamber. The elastic membrane includes a nanometric-sized pin hole extending there through to interconnect the first chamber to the second chamber. The elastic membrane is formed of a first electrode film and a second electrode film separated by a piezo insulating film. Electrical connection leads are provided to support application of a bias current to the first and second electrode films of the elastic membrane. In response to an applied bias current, the elastic membrane deforms by bending in a direction towards one of the first and second chambers so as to produce an increase in a diameter of the pin hole. | 03-03-2016 |
| 20160056249 | BACKSIDE SOURCE-DRAIN CONTACT FOR INTEGRATED CIRCUIT TRANSISTOR DEVICES AND METHOD OF MAKING SAME - An integrated circuit transistor is formed on and in a substrate. A trench in the substrate is at least partially filed with a metal material to form a source (or drain) contact buried in the substrate. The substrate further includes a source (or drain) region epitaxially grown above the source (or drain) contact. The substrate further includes a channel region adjacent to the source (or drain) region. A gate dielectric is provided on top of the channel region and a gate electrode is provided on top of the gate dielectric. The substrate is preferably of the silicon on insulator (SOI) type. | 02-25-2016 |
| 20160035872 | METHOD FOR THE FORMATION OF SILICON AND SILICON-GERMANIUM FIN STRUCTURES FOR FINFET DEVICES - A substrate layer formed of a first semiconductor material includes adjacent first and second regions. Fin structures are formed from the substrate layer in both the first and second regions. At least the side walls of the fin structures in the second region are covered with an epitaxially grown layer of second semiconductor material. A drive in process is performed to convert the fin structures in the second region from the first semiconductor material to the second semiconductor material. The first semiconductor material is, for example, silicon, and the second semiconductor material is, for example, silicon germanium or silicon carbide. The fin structures in the first region are provided for a FinFET of a first (for example, n-channel) conductivity type while the fin structures in the second region are provided for a FinFET of a second (for example, p-channel) conductivity type. | 02-04-2016 |
| 20160035843 | CMOS IN SITU DOPED FLOW WITH INDEPENDENTLY TUNABLE SPACER THICKNESS - A method for manufacturing a microelectronic device with transistors of different types having raised source and drain regions and different overlap regions. | 02-04-2016 |
| 20160035820 | UNIAXIALLY-STRAINED FD-SOI FINFET - Methods and structures for forming uniaxially-strained, nanoscale, semiconductor bars from a biaxially-strained semiconductor layer are described. A spatially-doubled mandrel process may be used to form a mask for patterning dense, narrow trenches through the biaxially-strained semiconductor layer. The resulting slicing of the biaxially-strained layer enhances carrier mobility and can increase device performance. | 02-04-2016 |
| 20150380258 | METHOD FOR CONTROLLING HEIGHT OF A FIN STRUCTURE - Methods and structures for forming fin structures whilst controlling the height of the fin structures with high uniformity across large areas are described. According to some aspects, a multi-layer structure comprising a first etch-stop layer and a second etch-stop layer separated from a substrate and from each other by spacer layers is formed on a substrate. Trenches may be formed through the first and second etch-stop layers. A buffer layer may be formed in the trenches, filling the trenches to a level approximately at a position of the first etch-stop layer. A semiconductor layer may be formed above the buffer layer and etched back to the second etch-stop layer to form semiconductor fins of highly uniform heights. | 12-31-2015 |
| 20150372140 | FINFETS HAVING STRAINED CHANNELS, AND METHODS OF FABRICATING FINFETS HAVING STRAINED CHANNELS - Techniques and structures for controlling etch-back of a finFET fin are described. One or more layers may be deposited over the fin and etched. Etch-back of a planarization layer may be used to determine a self-limited etch height of one or more layers adjacent the fin and a self-limited etch height of the fin. Strain-inducing material may be formed at regions of the etched fin to induce strain in the channel of a finFET. | 12-24-2015 |
| 20150372107 | SEMICONDUCTOR DEVICES HAVING FINS, AND METHODS OF FORMING SEMICONDUCTOR DEVICES HAVING FINS - Methods and structures associated with forming finFETs that have fin pitches less than 30 nm are described. A selective nitridation process may be used during spacer formation on the gate to enable finer fin pitch than could be achieved using traditional spacer deposition processes. The spacer formation may also allow precise control over formation of source and drain junctions. | 12-24-2015 |
| 20150364578 | METHOD OF FORMING A REDUCED RESISTANCE FIN STRUCTURE - Methods and structures for forming a reduced resistance region of a finFET are described. According to some aspects, a dummy gate and first gate spacer may be formed above a fin comprising a first semiconductor composition. At least a portion of source and drain regions of the fin may be removed, and a second semiconductor composition may be formed in the source and drain regions in contact with the first semiconductor composition. A second gate spacer may be formed covering the first gate spacer. The methods may be used to form finFETs having reduced resistance at source and drain junctions. | 12-17-2015 |
| 20150357983 | FIXED GAIN AMPLIFIER CIRCUIT - An instrumentation amplifier includes first and second resistors for gain setting. The operational amplifiers within the instrumentation amplifier include selectively enabled current drive sources coupled to the amplifier output. The first and second resistors have variable resistances. A control circuit is configured to select the variable resistances of the first and second resistors to implement a fixed gain for the instrumentation amplifier and further selectively enable the current drive sources. The control circuit receives an indication of a downstream programmable gain (for example, from a downstream programmable gain amplifier). The variable resistances of the first and second resistors are selected to be scaled inversely with respect to the downstream programmable gain and the current drive sources are enabled proportionately with respect to the downstream programmable gain. | 12-10-2015 |
| 20150357477 | BACKSIDE SOURCE-DRAIN CONTACT FOR INTEGRATED CIRCUIT TRANSISTOR DEVICES AND METHOD OF MAKING SAME - An integrated circuit transistor is formed on and in a substrate. A trench in the substrate is at least partially filed with a metal material to form a source (or drain) contact buried in the substrate. The substrate further includes a source (or drain) region epitaxially grown above the source (or drain) contact. The substrate further includes a channel region adjacent to the source (or drain) region. A gate dielectric is provided on top of the channel region and a gate electrode is provided on top of the gate dielectric. The substrate is preferably of the silicon on insulator (SOI) type. | 12-10-2015 |
| 20150357425 | BURIED SOURCE-DRAIN CONTACT FOR INTEGRATED CIRCUIT TRANSISTOR DEVICES AND METHOD OF MAKING SAME - An integrated circuit transistor is formed on a substrate. A trench in the substrate is at least partially filed with a metal material to form a source (or drain) contact buried in the substrate. The substrate further includes a source (or drain) region in the substrate which is in electrical connection with the source (or drain) contact. The substrate further includes a channel region adjacent to the source (or drain) region. A gate dielectric is provided on top of the channel region and a gate electrode is provided on top of the gate dielectric. The substrate may be of the silicon on insulator (SOI) or bulk type. The buried source (or drain) contact makes electrical connection to a side of the source (or drain) region using a junction provided at a same level of the substrate as the source (or drain) and channel regions. | 12-10-2015 |
| 20150351234 | SUPPORT STRUCTURE FOR STACKED INTEGRATED CIRCUIT DIES - Delamination of stacked integrated circuit die configurations on printed circuit boards is avoided by providing a metal trace support structure underneath the die stack. The metal trace support structure features substantially equally spaced thin metal traces in place of a contiguous metal plate which has been used in the past. Spaced apart thin metal traces are less vulnerable to thermal expansion than a metal plate which has a large thermal mass. The metal traces still provide structural stability, while preventing delamination of the die stack configuration during thermal processing. A method of attaching a bridge die stack configuration to a printed circuit board by adhering a die attach film to a field of metal traces is demonstrated. In addition, the electrical and structural integrity of the bridge die stack formed with a metal trace support structure is confirmed with test results. | 12-03-2015 |
| 20150349085 | METHOD FOR MAKING A SEMICONDUCTOR DEVICE WITH SIDEWALL SPACERS FOR CONFINING EPITAXIAL GROWTH - A method for making a semiconductor device includes forming laterally spaced-apart semiconductor fins above a substrate. At least one dielectric layer is formed adjacent an end portion of the semiconductor fins and within the space between adjacent semiconductor fins. A pair of sidewall spacers is formed adjacent outermost semiconductor fins at the end portion of the semiconductor fins. The at least one dielectric layer and end portion of the semiconductor fins between the pair of sidewall spacers are removed. Source/drain regions are formed between the pair of sidewall spacers. | 12-03-2015 |
| 20150348891 | METHOD FOR MAKING SEMICONDUCTOR DEVICE WITH LEAD FRAME MADE FROM TOP AND BOTTOM COMPONENTS AND RELATED DEVICES - A method for making a semiconductor device may include bonding a top lead frame component, having recesses, with a bottom lead frame component to form a lead frame, the top and bottom lead frame components each including metal. The method may include mounting an IC on the lead frame, encapsulating the IC and the lead frame, and removing portions of the bottom lead frame component to define contacts for the IC. | 12-03-2015 |
| 20150348879 | SEMICONDUCTOR DEVICE WITH ENCAPSULATED LEAD FRAME CONTACT AREA AND RELATED METHODS - A semiconductor device may include an IC, and lead frame contact areas adjacent the IC. Each lead frame contact area may have a lead opening. The semiconductor device may include bond wires, each bond wire coupling a respective lead frame contact area with the IC. The semiconductor device may include encapsulation material surrounding the IC, the lead frame contact areas, and the bond wires, and leads. Each lead may extend through a respective lead opening and outwardly from the encapsulation material. | 12-03-2015 |
| 20150348851 | METHOD FOR THE FORMATION OF A FINFET DEVICE HAVING PARTIALLY DIELECTRIC ISOLATED FIN STRUCTURE - A semiconductor material is patterned to define elongated fins insulated from an underlying substrate. A polysilicon semiconductor material is deposited over and in between the elongated fins, and is patterned to define elongated gates extending to perpendicularly cross over the elongated fins at a transistor channel. Sidewall spacers are formed on side walls of the elongated gates. Portions of the elongated fins located between the elongated gates are removed, along with the underlying insulation, to expose the underlying substrate. One or more semiconductor material layers are then epitaxially grown from the underlying substrate at locations between the elongated gates. The one or more semiconductor material layers may include an undoped epi-layer and an overlying doped epi-layer. The epitaxial material defines a source or drain of the transistor. | 12-03-2015 |
| 20150340275 | METHOD OF PRODUCING A MICROELECTRONIC DEVICE IN A MONOCRYSTALLINE SEMICONDUCTOR SUBSTRATE WITH ISOLATION TRENCHES PARTIALLY FORMED UNDER AN ACTIVE REGION - A method of producing a microelectronic device in a substrate including a first semiconductor layer, a dielectric layer and a second monocrystalline semiconductor layer, the method including: etching a trench through the first semiconductor layer and the dielectric layer, and such that the trench delimits one active region of the microelectronic device; chemical vapor etching the second semiconductor layer, at a level of a bottom wall of the trench, according to at least two crystalline planes of the second semiconductor layer such that an etched part of the second semiconductor layer extends under a part of the active region; filling the trench and the etched part of the second semiconductor layer with a dielectric material. | 11-26-2015 |
| 20150333155 | METHOD FOR MAKING SEMICONDUCTOR DEVICE WITH FILLED GATE LINE END RECESSES - A method for making a semiconductor device may include forming first and second spaced apart semiconductor active regions with an insulating region therebetween, forming at least one sacrificial gate line extending between the first and second spaced apart semiconductor active regions and over the insulating region, and forming sidewall spacers on opposing sides of the at least one sacrificial gate line. The method may further include removing portions of the at least one sacrificial gate line within the sidewall spacers and above the insulating region defining at least one gate line end recess, filling the at least one gate line end recess with a dielectric material, and forming respective replacement gates in place of portions of the at least one sacrificial gate line above the first and second spaced apart semiconductor active regions. | 11-19-2015 |
| 20150333086 | METHOD FOR MAKING SEMICONDUCTOR DEVICE WITH DIFFERENT FIN SETS - A method for making a semiconductor device may include forming, above a substrate, first and second semiconductor regions laterally adjacent one another and each including a first semiconductor material. The first semiconductor region may have a greater vertical thickness than the second semiconductor region and define a sidewall with the second semiconductor region. The method may further include forming a spacer above the second semiconductor region and adjacent the sidewall, and forming a third semiconductor region above the second semiconductor region and adjacent the spacer, with the second semiconductor region including a second semiconductor material different than the first semiconductor material. The method may also include removing the spacer and portions of the first semiconductor material beneath the spacer, forming a first set of fins from the first semiconductor region, and forming a second set of fins from the second and third semiconductor regions. | 11-19-2015 |
| 20150325686 | METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE INCLUDING FIN RELAXATION, AND RELATED STRUCTURES - Methods of fabricating semiconductor structures involve the formation of fins for finFET transistors having different stress/strain states. Fins of one stress/strain state may be employed to form n-type finFETS, while fins of another stress/strain state may be employed to form p-type finFETs. The fins having different stress/strain states may be fabricated from a common layer of semiconductor material. Semiconductor structures and devices are fabricated using such methods. | 11-12-2015 |
| 20150325487 | METHOD FOR THE FORMATION OF FIN STRUCTURES FOR FINFET DEVICES - On a first semiconductor material substrate, an overlying sacrificial layer formed of a second semiconductor material is deposited. In a first region, a first semiconductor material region is formed over the sacrificial layer. In a second region, a second semiconductor material region is formed over the sacrificial layer. The first semiconductor material region is patterned to define a first FinFET fin. The second semiconductor material region is patterned to define a second FinFET fin. The fins are each covered with a cap and sidewall spacer. The sacrificial layer formed of the second semiconductor material is then selectively removed to form an opening below each of the first and second FinFET fins (with those fins being supported by the sidewall spacers). The openings below each of the fins are then filled with a dielectric material that serves to isolate the semiconductive materials of the fins from the substrate. | 11-12-2015 |
| 20150323944 | CURRENT MODULATION CIRCUIT - A modulated digital input signal is passed through a conditioning circuit to generate a first input signal. An error amplifier circuit receives the first input signal and a second input signal, and controls the operation of a MOS transistor to generate an output signal that is current modulated. The output signal is sensed to generate a feedback signal. A switching circuit selectively applies the feedback signal as the second input signal in response to a transition of the modulated digital input signal from a first logic state to a second logic state. The switching circuit alternatively selectively applies a fixed reference signal as the second input signal to the error amplifier in response to a transition of the modulated digital input signal from the second logic state to the first logic state. | 11-12-2015 |
| 20150323739 | METHOD FOR MAKING A PHOTONIC INTEGRATED CIRCUIT HAVING A PLURALITY OF LENSES - A photonic integrated circuit includes optical circuitry fabricated over an underlying circuitry layer. The optical circuitry includes a dielectric material having recesses disposed within, layers of a light waveguide material deposited within the recesses, and lenses disposed over each layer of waveguide material. The underlying circuitry layer may include, for example, a semiconductor wafer as well as circuitry fabricated during front end of line (FEOL) semiconductor manufacturing such as, for example, sources, gates, drains, interconnects, contacts, resistors, and other circuitry that may be manufactured during FEOL processes. The underlying circuitry layer may also include circuitry manufactured during back end of line semiconductor manufacturing processes such as, for example, interconnect structures, metallization layers, and contacts. | 11-12-2015 |
| 20150318285 | DRAM INTERCONNECT STRUCTURE HAVING FERROELECTRIC CAPACITORS - An interconnect structure for use in coupling transistors in an integrated circuit is disclosed, including various configurations in which ferroelectric capacitors exhibiting negative capacitance are coupled in series with dielectric capacitors. In one embodiment, the negative capacitor includes a dielectric/ferroelectric bi-layer. When a negative capacitor is electrically coupled in series with a conventional dielectric capacitor, the series combination behaves like a stable ferroelectric capacitor for which the overall capacitance can be measured experimentally, and tuned to a desired value. The composite capacitance of a dielectric capacitor and a ferroelectric capacitor having negative capacitance coupled in series is, in theory, infinite, and in practice, very large. A series combination of positive and negative capacitors within a microelectronic interconnect structure can be used to make high capacity DRAM memory cells. | 11-05-2015 |
| 20150311113 | TRENCH STRUCTURE FOR HIGH PERFORMANCE INTERCONNECTION LINES OF DIFFERENT RESISTIVITY AND METHOD OF MAKING SAME - An integrated circuit includes a substrate with an interlevel dielectric layer positioned above the substrate. First trenches having a first depth are formed in the interlevel dielectric layer and a metal material fills the first trenches to form first interconnection lines. Second trenches having a second depth are also formed in the interlevel dielectric layer and filled with a metal material to form second interconnection lines. The first and second interconnection lines have a substantially equal pitch, which in a preferred implementation is a sub-lithographic pitch, and different resistivities due to the difference in trench depth. The first and second trenches are formed with an etching process through a hard mask having corresponding first and second openings of different depths. A sidewall image transfer process is used to define sub-lithographic structures for forming the first and second openings in the hard mask. | 10-29-2015 |
| 20150303903 | AUTOMATIC GAIN AND OFFSET COMPENSATION FOR AN ELECTRONIC CIRCUIT - Gain offset and voltage offset compensation for a controllable gain element of a circuit is effected in response to a gain offset value and voltage offset value. A current operating condition of the circuit is sensed and compared to a nominal operating condition. If the current operating condition is outside the nominal operating condition by more than a threshold, a calibration operation to set the gain and voltage offset values is performed. The gain offset value is selected as a function of the sensed current operating condition. With respect to the voltage offset, differential input terminals of the controllable gain element are shunted and the output is measured. The measured output value of the controllable gain element is applied as the voltage offset value. The operating conditions at issue may be one or more of supply voltage and temperature. | 10-22-2015 |
| 20150303218 | METHOD TO CO-INTEGRATE OPPOSITELY STRAINED SEMICONDUCTOR DEVICES ON A SAME SUBSTRATE - Methods and structures for forming localized, differently-strained regions in a semiconductor layer on a substrate are described. An initial, unstrained, semiconductor-on-insulator substrate may be processed to form the differently-strained regions in the original semiconductor layer. The differently-strained regions may have opposite types of strain. The strains in the different regions may be formed independently. | 10-22-2015 |
| 20150294903 | METHOD FOR FABRICATING MICROELECTRONIC DEVICES WITH ISOLATION TRENCHES PARTIALLY FORMED UNDER ACTIVE REGIONS - A method of producing a microelectronic device in a substrate comprising a first semiconductor layer, a dielectric layer and a second semiconductor layer, comprising the following steps: etching a trench through the first semiconductor layer, the dielectric layer and a part of the thickness of the second semiconductor layer, thus defining, in the first semiconductor layer, one active region of the microelectronic device, ionic implantation in one or more side walls of the trench, at the level of the second semiconductor layer, modifying the crystallographic properties and/or the chemical properties of the implanted semiconductor, etching of the implanted semiconductor such that at least a part of the trench extends under a part of the active region, —filling of the trench with a dielectric material, forming an isolation trench surrounding the active region and comprising portions extending under a part of the active region. | 10-15-2015 |
| 20150279784 | INTERCONNECT STRUCTURE HAVING LARGE SELF-ALIGNED VIAS - A wavy line interconnect structure that accommodates small metal lines and large vias is disclosed. A lithography mask design used to pattern metal line trenches uses optical proximity correction (OPC) techniques to approximate wavy lines using rectangular opaque features. The large vias can be formed using a self-aligned dual damascene process without the need for a separate via lithography mask. Instead, a sacrificial layer allows etching of an underlying thick dielectric block, while protecting narrow features of the trenches that correspond to the metal line interconnects. The resulting vias have an aspect ratio that is relatively easy to fill, while the larger via footprint provides low via resistance. By lifting the shrink constraint for vias, thereby allowing the via footprint to exceed the minimum size of the metal line width, a path is cleared for further process generations to continue shrinking metal lines to dimensions below 10 nm. | 10-01-2015 |
| 20150279695 | CONTROL OF WAFER SURFACE CHARGE DURING CMP - CMP selectivity, removal rate, and uniformity are controlled both locally and globally by altering electric charge at the wafer surface. Surface charge characterization is performed by an on-board metrology module. Based on a charge profile map, the wafer can be treated in an immersion bath to impart a more positive or negative charge overall, or to neutralize the entire wafer before the CMP operation is performed. If charge hot spots are detected on the wafer, a charge pencil can be used to neutralize localized areas. One type of charge pencil bears a tapered porous polymer tip that is placed in close proximity to the wafer surface. Films present on the wafer absorb ions from, or surrender ions to, the charge pencil tip, by electrostatic forces. The charge pencil can be incorporated into a CMP system to provide an in-situ treatment prior to the planarization step or the slurry removal step. | 10-01-2015 |
| 20150270398 | METHODS OF FORMING ISOLATED CHANNEL REGIONS FOR A FINFET SEMICONDUCTOR DEVICE AND THE RESULTING DEVICE - One method disclosed includes, among other things, forming a fin structure comprised of a semiconductor material, a first epi semiconductor material and a second epi semiconductor material, forming a sacrificial gate structure above the fin structure, forming a sidewall spacer adjacent the sacrificial gate structure, performing at least one etching process to remove the portions of the fin structure positioned laterally outside of the sidewall spacer so as to thereby define a fin cavity in the source/drain regions of the device and to expose edges of the fin structure positioned under the sidewall spacer, and performing an epitaxial deposition process to form an epi etch stop layer on the exposed edges of the fin structure positioned under the sidewall spacer and within the fin cavity. | 09-24-2015 |
| 20150255605 | METHOD TO ENHANCE STRAIN IN FULLY ISOLATED FINFET STRUCTURES - Methods and structures for increasing strain in fully insulated finFETs are described. The finFET structures may be formed on an insulating layer and include source, channel, and drain regions that are insulated all around. During fabrication, the source and drain regions may be formed as suspended structures. A strain-inducing material may be formed around the source and drain regions on four contiguous sides so as to impart strain to the channel region of the finFET. | 09-10-2015 |
| 20150255457 | METHODS AND APPARATUS TO FORM FIN STRUCTURES OF DIFFERENT COMPOSITIONS ON A SAME WAFER VIA MANDREL AND DIFFUSION - Methods and structures for forming finFETs of different semiconductor composition and of different conductivity type on a same wafer are described. Some finFET structures may include strained channel regions. FinFETs of a first semiconductor composition may be grown in trenches formed in a second semiconductor composition. Material of the second semiconductor composition may be removed from around some of the fins at first regions of the wafer, and may remain around fins at second regions of the wafer. A chemical component from the second semiconductor composition may be driven into the fins by diffusion at the second regions to form finFETs of a different chemical composition from those of the first regions. The converted fins at the second regions may include strain. | 09-10-2015 |
| 20150255295 | METHODS OF FORMING ALTERNATIVE CHANNEL MATERIALS ON A NON-PLANAR SEMICONDUCTOR DEVICE AND THE RESULTING DEVICE - One illustrative method disclosed herein involves, among other things, forming trenches to form an initial fin structure having an initial exposed height and sidewalls, forming a protection layer on at least the sidewalls of the initial fin structure, extending the depth of the trenches to thereby define an increased-height fin structure, with a layer of insulating material over-filling the final trenches and with the protection layer in position, performing a fin oxidation thermal anneal process to convert at least a portion of the increased-height fin structure into an isolation material, removing the protection layer, and performing an epitaxial deposition process to form a layer of semiconductor material on at least portions of the initial fin structure. | 09-10-2015 |
| 20150249153 | METHOD TO FORM LOCALIZED RELAXED SUBSTRATE BY USING CONDENSATION - Methods and structures for forming a localized, strained region of a substrate are described. Trenches may be formed at boundaries of a localized region of a substrate. An upper portion of sidewalls at the localized region may be covered with a covering layer, and a lower portion of the sidewalls at the localized region may not be covered. A converting material may be formed in contact with the lower portion of the localized region, and the substrate heated. The heating may introduce a chemical species from the converting material into the lower portion, which creates stress in the localized region. The methods may be used to form strained-channel finFETs. | 09-03-2015 |
| 20150243784 | METHOD TO FORM STRAINED CHANNEL IN THIN BOX SOI STRUCTURES BY ELASTIC STRAIN RELAXATION OF THE SUBSTRATE - Methods and structures for forming strained-channel FETs are described. A strain-inducing layer may be formed under stress in a silicon-on-insulator substrate below the insulator. Stress-relief cuts may be formed in the strain-inducing layer to relieve stress in the strain-inducing layer. The relief of stress can impart strain to an adjacent semiconductor layer. Strained-channel, fully-depleted SOI FETs and strained-channel finFETs may be formed from the adjacent semiconductor layer. The amount and type of strain may be controlled by etch depths and geometries of the stress-relief cuts and choice of materials for the strain-inducing layer. | 08-27-2015 |
| 20150243660 | CMOS STRUCTURE HAVING LOW RESISTANCE CONTACTS AND FABRICATION METHOD - A method for fabricating a CMOS integrated circuit structure and the CMOS integrated circuit structure. The method includes creating one or more n-type wells, creating one or more p-type wells, creating one or more pFET source-drains embedded in each of the one or more n-type wells, creating one or more nFET source-drains embedded in each of the one or more p-type wells, creating a pFET contact overlaying each of the one or more pFET source-drains, and creating an nFET contact overlaying each of the one or more nFET source-drains. A material of each of the one or more pFET source-drains includes silicon doped with a p-type material; a material of each of the one or more nFET source-drains includes silicon doped with an n-type material; a material of each pFET contact includes nickel silicide; and a material of each nFET contact comprises titanium silicide. | 08-27-2015 |
| 20150243510 | METHOD FOR CONTROLLING THE PROFILE OF AN ETCHED METALLIC LAYER - An ashing chemistry employing a combination of Cl | 08-27-2015 |
| 20150236051 | SEMICONDUCTOR DEVICE INCLUDING GROUPS OF STACKED NANOWIRES AND RELATED METHODS - A method for making a semiconductor device may include forming, above a substrate, a stack of alternating layers of first and second semiconductor materials. The second semiconductor material may be different than the first semiconductor material. The method may further include forming fins from the stack, with each fin having alternating layers of the first and second semiconductor materials, and selectively removing sidewall portions of the second semiconductor material from the fins to define recesses therein. The method may also include forming a dielectric material within the recesses, forming additional first semiconductor material on sidewall portions of the first semiconductor material in the fins, and forming a dielectric layer overlying the fins to define nanowires including the first semiconductor material within the dielectric layer. | 08-20-2015 |
| 20150236050 | SEMICONDUCTOR DEVICE INCLUDING GROUPS OF NANOWIRES OF DIFFERENT SEMICONDUCTOR MATERIALS AND RELATED METHODS - A method for making a semiconductor device may include forming, above a substrate, a plurality of fins, forming a first semiconductor material on sides of a first group of the fins, and forming a second semiconductor material on sides of a second group of the fins. The method may further include forming a dielectric layer overlying the plurality of fins to define first and second groups of nanowires within the dielectric layer, with the first group of nanowires including the first semiconductor material and the second group of nanowires including the second semiconductor material. | 08-20-2015 |
| 20150228781 | METHOD FOR MAKING SEMICONDUCTOR DEVICE WITH STRESSED SEMICONDUCTOR AND RELATED DEVICES - A method is for making a semiconductor device. The method may include forming fins above a substrate, each fin having an upper fin portion including a first semiconductor material and a lower fin portion including a dielectric material. The method may include forming recesses into sidewalls of each lower fin portion to expose a lower surface of a respective upper fin portion, and forming a second semiconductor layer surrounding the fins including the exposed lower surfaces of the upper fin portions. The second semiconductor layer may include a second semiconductor material to generate stress in the first semiconductor material. | 08-13-2015 |
| 20150228777 | SILICON ON INSULATOR DEVICE WITH PARTIALLY RECESSED GATE - Transistors having partially recessed gates are constructed on silicon-on-insulator (SOI) semiconductor wafers provided with a buried oxide layer (BOX), for example, FD-SOI and UTBB devices. An epitaxially grown channel region relaxes constraints on the design of doped source and drain profiles. Formation of a partially recessed gate and raised epitaxial source and drain regions allow further improvements in transistor performance and reduction of short channel effects such as drain induced barrier lowering (DIBL) and control of a characteristic subthreshold slope. Gate recess can be varied to place the channel at different depths relative to the dopant profile, assisted by advanced process control. The partially recessed gate has an associated high-k gate dielectric that is initially formed in contact with three sides of the gate. Subsequent removal of the high-k sidewalls and substitution of a lower-k silicon nitride encapsulant lowers capacitance between the gate and the source and drain regions. | 08-13-2015 |
| 20150221648 | HIGH DOSE IMPLANTATION FOR ULTRATHIN SEMICONDUCTOR-ON-INSULATOR SUBSTRATES - Methods and structures for forming highly-doped, ultrathin layers for transistors formed in semiconductor-on-insulator substrates are described. High dopant concentrations may be achieved in ultrathin semiconductor layers to improve device characteristics. Ion implantation at elevated temperatures may mitigate defect formation for stoichiometric dopant concentrations up to about 30%. In-plane stressors may be formed adjacent to channels of transistors formed in ultrathin semiconductor layers. | 08-06-2015 |
| 20150214338 | FINFET WITH SILICON GERMANIUM STRESSOR AND METHOD OF FORMING - The present disclosure generally provides for a method of forming a FinFET with a silicon germanium (SiGe) stressor, in addition to a FinFET structure obtained from embodiments of the method. The method can include forming a semiconductor fin on a buried insulator layer; forming a gate structure on the semiconductor fin; forming a silicon germanium (SiGe) layer on the buried insulator layer, wherein the SiGe layer contacts the semiconductor fin; and heating the SiGe layer, wherein the heating diffuses germanium (Ge) into the semiconductor fin. | 07-30-2015 |
| 20150179477 | PACKAGED IC DEVICES AND ASSOCIATED IC DEVICE PACKAGING METHODS - A method of making packaged integrated circuit (IC) devices includes mixing a waste thermoset polymer material with a thermosetting polymer to form a mixed thermosetting polymer and packaging IC devices in a molding operation using the mixed thermosetting polymer to thereby recycle the waste thermoset polymer material. A packaged IC device includes an IC device and an encapsulating material surrounding the IC device. The encapsulating material includes a thermoset polymer matrix and thermoset polymer particles dispersed in thermoset polymer matrix. | 06-25-2015 |
| 20150162434 | METHOD FOR THE FORMATION OF A FINFET DEVICE HAVING PARTIALLY DIELECTRIC ISOLATED FIN STRUCTURE - A semiconductor material is patterned to define elongated fins insulated from an underlying substrate. A polysilicon semiconductor material is deposited over and in between the elongated fins, and is patterned to define elongated gates extending to perpendicularly cross over the elongated fins at a transistor channel. Sidewall spacers are formed on side walls of the elongated gates. Portions of the elongated fins located between the elongated gates are removed, along with the underlying insulation, to expose the underlying substrate. One or more semiconductor material layers are then epitaxially grown from the underlying substrate at locations between the elongated gates. The one or more semiconductor material layers may include an undoped epi-layer and an overlying doped epi-layer. The epitaxial material defines a source or drain of the transistor. | 06-11-2015 |
| 20150162433 | METHOD FOR THE FORMATION OF A FINFET DEVICE WITH EPITAXIALLY GROWN SOURCE-DRAIN REGIONS HAVING A REDUCED LEAKAGE PATH - Elongated fins of a first semiconductor material are insulated from and formed over an underlying substrate layer (of either SOI or bulk type). Elongated gates of a second semiconductor material are then formed to cross over the elongated fins at channel regions, and the gate side walls are covered by sidewall spacers. A protective material is provided to cover the underlying substrate layer and define sidewall spacers on side walls of the elongated fins between the elongated gates. The first semiconductor material and insulating material of the elongated fins located between the protective material sidewall spacers (but not under the elongated gates) is removed to form trenches aligned with the channel regions. Additional semiconductor material is then epitaxially grown inside each trench between the elongated gates to form source-drain regions adjacent the channel regions formed by the elongated fins of the first semiconductor material located under the elongated gates. | 06-11-2015 |
| 20150162278 | TRENCH INTERCONNECT HAVING REDUCED FRINGE CAPACITANCE - Ultra-low-k dielectric materials used as inter-layer dielectrics in high-performance integrated circuits are prone to be structurally unstable. The Young's modulus of such materials is decreased, resulting in porosity, poor film strength, cracking, and voids. An alternative dual damascene interconnect structure incorporates deep air gaps into a high modulus dielectric material to maintain structural stability while reducing capacitance between adjacent nanowires. Incorporation of a deep air gap having k=1.0 compensates for the use of a higher modulus film having a dielectric constant greater than the typical ultra-low-k (ULK) dielectric value of about 2.2. The higher modulus film containing the deep air gap is used as an insulator and a means of reducing fringe capacitance between adjacent metal lines. The dielectric layer between two adjacent metal lines thus forms a ULK/high-modulus dielectric bi-layer. | 06-11-2015 |
| 20150162277 | ADVANCED INTERCONNECT WITH AIR GAP - Ultra-low-k dielectric materials used as inter-layer dielectrics in high-performance integrated circuits are prone to be structurally unstable. The Young's modulus of such materials is decreased, resulting in porosity, poor film strength, cracking, and voids. An alternative dual damascene interconnect structure incorporates air gaps into a high modulus dielectric material to maintain structural stability while reducing capacitance between adjacent nanowires. Incorporation of an air gap having k=1.0 compensates for the use of a higher modulus film having a dielectric constant greater than the typical ultra-low-k (ULK) dielectric value of about 2.2. The higher modulus film containing the air gap is used as an insulator between adjacent metal lines, while a ULK film is retained to insulate vias. The dielectric layer between two adjacent metal lines thus forms a ULK/high-modulus dielectric bi-layer. | 06-11-2015 |
| 20150162248 | METHOD FOR THE FORMATION OF DIELECTRIC ISOLATED FIN STRUCTURES FOR USE, FOR EXAMPLE, IN FINFET DEVICES - On a substrate formed of a first semiconductor material, a first overlying layer formed of a second semiconductor material is deposited. A second overlying layer formed of a third semiconductor material is deposited over the first overlying layer. The first and second overlying layers are patterned to define fins, wherein each fin includes a first region formed of the third material over a second region formed of the second material. An oxide material fills the space between the fins. A thermal oxidation is then performed to convert the second region to a material insulating the first region formed of the third material from the substrate. As an optional step, the second region formed of the second material is horizontally thinned before the oxide material is deposited and the thermal oxidation is performed. Once the fins are formed and insulated from the substrate, conventional FinFET fabrication is performed. | 06-11-2015 |
| 20150162194 | PATTERNING THROUGH IMPRINTING - Embodiments of present invention provide a method of forming device pattern. The method includes defining a device pattern to be created in a device layer; forming a sacrificial layer on top of the device layer; identifying an imprinting mold that, at a position along a height thereof, has a horizontal cross-sectional shape that represents the device pattern; pushing the imprinting mold uniformly into the sacrificial layer until at least the position of the imprinting mold reaches a level inside the sacrificial layer that is being pushed by the imprinting mold; removing the imprinting mold away from the sacrificial layer; forming a hard mask in recesses created by the imprinting mold in the sacrificial layer, the hard mask has a pattern representing the device pattern; and transferring the pattern of the hard mask into underneath the device layer. | 06-11-2015 |
| 20150155176 | SIDEWALL HEIGHT NONUNIFORMITY REDUCTION FOR SIDEWALL IMAGE TRANSFER PROCESSES - A method and integrated circuit structure. The method includes reducing sidewall height nonuniformity in sidewall image transfer processes by depositing an organic planarization layer over the integrated circuit structure after sidewall definition, mandrel removal, and etch of exposed portions of a first underlying layer in a sidewall image transfer process that is thick enough to cover one or more first sidewalls having a first height and one or more second sidewalls having a second height with the first height greater than the second height, removing a part of the organic planarization layer leaving a first depth of the one or more first sidewalls exposed, removing the exposed first depth of the one or more first sidewalls, and removing the remaining organic planarization layer. | 06-04-2015 |
| 20150126003 | METHOD FOR THE FORMATION OF FIN STRUCTURES FOR FINFET DEVICES - A SOI substrate layer formed of a silicon semiconductor material includes adjacent first and second regions. A portion of the silicon substrate layer in the second region is removed such that the second region retains a bottom portion made of the silicon semiconductor material. An epitaxial growth of a silicon-germanium semiconductor material is made on the bottom portion to produce a silicon-germanium region. The silicon region is patterned to define a first fin structure of a FinFET of a first (for example, n-channel) conductivity type. The silicon-germanium region is also patterned to define a second fin structure of a FinFET of a second (for example, p-channel) conductivity type. | 05-07-2015 |
| 20150116090 | METHOD AND APPARATUS FOR INDUCTIVE COUPLING UTILIZING AN AMORPHOUS METAL BARRIER - A near-field magnetic induction system includes a metallic structure, an amorphous metal barrier and a near-field magnetic induction device. The device includes an antenna coupled to the amorphous metal barrier and a circuit electrically coupled to the antenna. In use, the antenna is separated from the metallic structure by the amorphous metal barrier. The amorphous metal barrier may be integrated with the near-field magnetic induction device or with the metallic structure. Inductive coupling with the near-field magnetic induction device may be used, for example, in communication or energy transfer applications such as RFID tags and inductive chargers. | 04-30-2015 |
| 20150115370 | SEMICONDUCTOR DEVICE PROVIDING ENHANCED FIN ISOLATION AND RELATED METHODS - A method for making a semiconductor device may include forming a first semiconductor layer on a substrate comprising a first semiconductor material, forming a second semiconductor layer on the first semiconductor layer comprising a second semiconductor material, and forming mask regions on the second semiconductor layer and etching through the first and second semiconductor layers to define a plurality of spaced apart pillars on the substrate. The method may further include forming an oxide layer laterally surrounding the pillars and mask regions, and removing the mask regions and forming inner spacers on laterally adjacent corresponding oxide layer portions atop each pillar. The method may additionally include etching through the second semiconductor layer between respective inner spacers to define a pair of semiconductor fins of the second semiconductor material from each pillar, and removing the inner spacers and forming an oxide beneath each semiconductor fin. | 04-30-2015 |
| 20150108573 | SEMICONDUCTOR DEVICE INCLUDING VERTICALLY SPACED SEMICONDUCTOR CHANNEL STRUCTURES AND RELATED METHODS - A method for making a semiconductor device may include forming, on a substrate, at least one stack of alternating first and second semiconductor layers. The first semiconductor layer may comprise a first semiconductor material and the second semiconductor layer may comprise a second semiconductor material. The first semiconductor material may be selectively etchable with respect to the second semiconductor material. The method may further include removing portions of the at least one stack and substrate to define exposed sidewalls thereof, forming respective spacers on the exposed sidewalls, etching recesses through the at least one stack and substrate to define a plurality of spaced apart pillars, selectively etching the first semiconductor material from the plurality of pillars leaving second semiconductor material structures supported at opposing ends by respective spacers, and forming at least one gate adjacent the second semiconductor material structures. | 04-23-2015 |
| 20150102496 | NOVEL METHOD TO MAKE HIGH ASPECT RATIO VIAS FOR HIGH PERFORMANCE DEVICES INTERCONNECTION APPLICATION - Metal interconnections are formed in an integrated circuit by forming a wide trench in a dielectric layer. A dielectric fin of a second dielectric material is formed in the trench. Conductive plugs and metal lines are formed on both sides of the fin. | 04-16-2015 |
| 20150102412 | SEMICONDUCTOR-ON-INSULATOR (SOI) DEVICE AND RELATED METHODS FOR MAKING SAME USING NON-OXIDIZING THERMAL TREATMENT - A method for making a semiconductor device may include forming, on a first semiconductor layer of a semiconductor-on-insulator (SOI) wafer, a second semiconductor layer comprising a second semiconductor material different than a first semiconductor material of the first semiconductor layer. The method may further include performing a thermal treatment in a non-oxidizing atmosphere to diffuse the second semiconductor material into the first semiconductor layer, and removing the second semiconductor layer. | 04-16-2015 |
| 20150102410 | SEMICONDUCTOR DEVICE INCLUDING STRESS LAYER ADJACENT CHANNEL AND RELATED METHODS - A method for making a semiconductor device may include forming a gate on a semiconductor layer, forming sidewall spacers adjacent the gate, and forming raised source and drain regions defining a channel in the semiconductor layer under the gate. The raised source and drain regions may be spaced apart from the gate by the sidewall spacers. The method may further include removing the sidewall spacers to expose the semiconductor layer between the raised source and drain regions and the gate, and forming a stress layer overlying the gate and the raised source and drain regions. The stress layer may contact the semiconductor layer between the raised source and drain regions and the gate. | 04-16-2015 |
| 20150099335 | METHOD OF MAKING A SEMICONDUCTOR DEVICE USING TRENCH ISOLATION REGIONS TO MAINTAIN CHANNEL STRESS - A method for forming a complementary metal oxide semiconductor (CMOS) semiconductor device includes forming laterally adjacent first and second active regions in a semiconductor layer of a silicon-on-insulator (SOI) wafer. A stress inducing layer is formed above the first active region to impart stress thereto. Trench isolation regions are formed bounding the first active region and adjacent portions of the stress inducing layer. The stress inducing layer is removed leaving the trench isolation regions to maintain stress imparted to the first active region. | 04-09-2015 |
| 20150099334 | METHOD OF MAKING A CMOS SEMICONDUCTOR DEVICE USING A STRESSED SILICON-ON-INSULATOR (SOI) WAFER - A method for forming a complementary metal oxide semiconductor (CMOS) semiconductor device includes providing a stressed silicon-on-insulator (sSOI) wafer comprising a stressed semiconductor layer having first and second laterally adjacent stressed semiconductor portions. The first stressed semiconductor portion defines a first active region. The second stressed semiconductor portion is replaced with an unstressed semiconductor portion. The unstressed semiconductor portion includes a first semiconductor material. The method further includes driving a second semiconductor material into the first semiconductor material of the unstressed semiconductor portion defining a second active region. | 04-09-2015 |
| 20150097289 | HYBRID PHOTONIC AND ELECTRONIC INTEGRATED CIRCUITS - A sequence of processing steps presented herein is used to embed an optical signal path within an array of nanowires, using only one lithography step. Using the techniques disclosed, it is not necessary to mask electrical features while forming optical features, and vice versa. Instead, optical and electrical signal paths can be created substantially simultaneously in the same masking cycle. This is made possible by a disparity in the widths of the respective features, the optical signal paths being significantly wider than the electrical ones. Using a damascene process, the structures of disparate widths are plated with metal that over-fills narrow trenches and under-fills a wide trench. An optical cladding material can then be deposited into the trench so as to surround an optical core for light transmission. | 04-09-2015 |
| 20150097244 | SEMICONDUCTOR DEVICE WITH A BURIED OXIDE STACK FOR DUAL CHANNEL REGIONS AND ASSOCIATED METHODS - A method for making a semiconductor device includes forming a buried oxide stack on a semiconductor wafer. The buried oxide stack includes a first oxide layer, a nitride layer on the first oxide layer, and a second oxide layer on the nitride layer. A semiconductor layer is formed on the second oxide layer. First and second channel regions are formed in the semiconductor layer. | 04-09-2015 |
| 20150097212 | SEMICONDUCTOR DEVICE WITH RELAXATION REDUCTION LINER AND ASSOCIATED METHODS - A method for forming a semiconductor device includes forming a mask layer on a stressed semiconductor layer of a stressed, semiconductor-on-insulator wafer. An isolation trench bounding the stressed semiconductor layer is formed. The isolation trench extends through the mask layer and into the SOI wafer past an oxide layer thereof. A dielectric body is formed in the isolation trench. A relaxation reduction liner is formed on the dielectric body and on an adjacent sidewall of the stressed semiconductor layer. The mask layer on the stressed semiconductor layer is removed. | 04-09-2015 |
| 20150096591 | POST-CMP HYBRID WAFER CLEANING TECHNIQUE - A brush-cleaning apparatus is disclosed for use in cleaning a semiconductor wafer after polishing. Embodiments of the brush-cleaning apparatus implemented with a multi-branch chemical dispensing unit are applied beneficially to clean semiconductor wafers, post-polish, using a hybrid cleaning method. An exemplary hybrid cleaning method employs a two-chemical sequence in which first and second chemical treatment modules are separate from one another, and are followed by a pH-neutralizing-rinse that occurs in a treatment module separate from the first and second chemical treatment modules. Implementation of such hybrid methods is facilitated by the multi-branch chemical dispensing unit, which provides separate chemical lines to different chemical treatment modules, and dispenses chemical to at least four different areas of each wafer during single-wafer processing in an upright orientation. The multi-branch chemical dispensing unit provides a flexible, modular building block for constructing various equipment configurations that use multiple chemical treatments and/or pH neutralization steps. | 04-09-2015 |
| 20150093861 | METHOD FOR THE FORMATION OF CMOS TRANSISTORS - An SOI substrate includes first and second active regions separated by STI structures and including gate stacks. A spacer layer conformally deposited over the first and second regions including the gate stacks is directionally etched to define sidewall spacers along the sides of the gate stacks. An oxide layer and nitride layer are then deposited. Using a mask, the nitride layer over the first active region is removed, and the mask and oxide layer are removed to expose the SOI substrate in the first active region. Raised source-drain structures are then epitaxially grown adjacent the gate stacks in the first active region and a protective nitride layer is deposited. The masking, nitride layer removal, and oxide layer removal steps are then repeated to expose the SOI in the second active region. Raised source-drain structures are then epitaxially grown adjacent the gate stacks in the second active region. | 04-02-2015 |
| 20150087205 | ADAPTIVE UNIFORM POLISHING SYSTEM - An adaptive uniform polishing system is equipped with feedback control to apply localized adjustments during a polishing operation. The adaptive uniform polishing system disclosed has particular application to the semiconductor industry. Such an adaptive uniform polishing system includes a rotatable head that holds a semiconductor wafer, and a processing unit structured to be placed in contact with an exposed surface of the wafer. The processing unit includes a rotatable macro-pad and a plurality of rotatable micro-pads that can polish different portions of the exposed surface at different rotation speeds and pressures. Thus, uniformity across the exposed surface can be enhanced by applying customized treatments to different areas. Customized treatments can include the use of different pad materials and geometries. Parameters of the adaptive uniform polishing system are programmable, based on in-situ data or data from other operations in a fabrication process, using advanced process control. | 03-26-2015 |
| 20150080722 | WEIGHT SCALE WITH ULTRASOUND IMAGING FOR ANKLE DISPLACEMENT MEASUREMENT - A device for correlating trend data with respect to a patient's weight and lower extremity displacement can identify conditions indicative of congestive heart failure. An imaging mechanism is operable to measure lower extremity displacement over a period of time. An over-time trend analysis of both the patient's weight and the lower extremity displacement measurements is performed to determine whether over a particular sample period an increase in a patient's lower extremity displacement can be correlated with an increase in the patient's weight. When such a correlation does not exist, an alert can be issued of conditions indicative of congestive heart failure. | 03-19-2015 |
| 20150076707 | INTEGRATED CIRCUIT VIA STRUCTURE AND METHOD OF FABRICATION - A method for creating one or more vias in an integrated circuit structure and the integrated circuit structure. The method includes depositing a coating layer over a hard mask layer on the integrated circuit structure; locating an initial via pattern layer over the coating layer; and etching the pattern of the one or more initial openings in the coating layer and through openings in the hard mask layer. The coating layer is a conformal deposition of an oxide, a boron nitride, or other nitride. The initial via pattern layer has one or more initial openings located therein. | 03-19-2015 |
| 20150076695 | SELECTIVE PASSIVATION OF VIAS - A method of forming an integrated circuit structure includes forming a cap layer above a first ILD layer of a first metal level, the first ILD layer includes a recess filled with a first conductive material to form a first interconnect structure. Next, a second ILD layer is formed above the cap layer and a via is formed within the second ILD layer as a second interconnect structure of a second metal level. The via is aligned with the first interconnect structure. Subsequently, a portion of the cap layer is removed to extend the via to expose a top portion of the first conductive material then a passivation cap is selectively formed at a bottom portion of the via in the second ILD layer and the passivation cap contacting the top portion of the first conductive material. The passivation cap includes a metal alloy to form an interface between the bottom portion of the via and the first conductive material. | 03-19-2015 |
| 20150076675 | LEADFRAME PACKAGE WITH WETTABLE SIDES AND METHOD OF MANUFACTURING SAME - Embodiments of the present disclosure are directed to leadframe packages with wettable sides and methods of manufacturing same. In one embodiment, the leads of the leadframe packages have recesses with a curved profile formed therein. The recesses are plated with a solder wettable layer of conductive material that enables solder to flow along the surface during surface mounting of the package to a board, such as a PCB. | 03-19-2015 |
| 20150076514 | METHOD TO INDUCE STRAIN IN FINFET CHANNELS FROM AN ADJACENT REGION - Methods and structures for forming strained-channel finFETs are described. Fin structures for finFETs may be formed using two epitaxial layers of different lattice constants that are grown over a bulk substrate. A first thin, strained, epitaxial layer may be cut to form strain-relieved base structures for fins. The base structures may be constrained in a strained-relieved state. Fin structures may be epitaxially grown in a second layer over the base structures. The constrained base structures can cause higher amounts of strain to form in the epitaxially-grown fins than would occur for non-constrained base structures. | 03-19-2015 |
| 20150071302 | SYSTEM AND METHOD FOR IMPROVED UPSTREAM TRANSMISSION - A system and method for improved upstream data transmission. In an embodiment, a cable modem includes a transceiver configured for transmitting data upstream once permission is granted. In between times when permission to transmit is granted, however, the cable modem is configured to prepare as much data as possible for immediate upstream transmission once that very permission is granted. Thus, prior to permission being granted, the cable modem assembles (pre-processes) the data into transmit frames such that the data frames may be stored in a local memory coupled to the transceiver in a “ready-to-go” format. In this manner, the entire amount of time/bandwidth allocated to the cable modem in response to its request for upstream data transmission may be dedicated to actually transmitting data upstream as opposed to consuming time and bandwidth processing the data into data frames after upstream data transmission has been granted. | 03-12-2015 |
| 20150071300 | SYSTEM AND METHOD FOR EFFICIENT UPSTREAM TRANSMISSION USING SUPPRESSION - A system and method suited for improved overall data transmission having a hardware-based transceiver configured for transmitting upstream data with suppressed data packets. In TCP sessions between devices, a server seeks an “acknowledgement” that the downstream data transmission has been received by a client. Some data packets sent upstream may contain only TCP acknowledgement data and therefore may be combined with other purely TCP acknowledgement data packets in order to reduce the impact of the TCP acknowledgement packets on the overall upstream data throughput. In addition, this results in increased TCP performance in the downstream transmission direction as well because the algorithm enables replacing earlier arriving ACK packets with later arriving ACK packets which allows the device to send all TCP ACK information known to the suppressor at the earliest possible time. | 03-12-2015 |
| 20150071283 | HARDWARE IMPLEMENTED ETHERNET MULTIPLE TUPLE FILTER SYSTEM AND METHOD - A filter in a DOCSIS bridge performs IP Filtering of incoming Ethernet packets in hardware. The filter includes a parser circuit which, in hardware, parses each of the incoming Ethernet packets and then utilizes the parsed information in combination with a content-addressable memory (CAM) that stores filtering information, to filter and route the incoming Ethernet packets. Detailed statistical data may also be generated to provide information on the type of filtering being performed by the DOCSIS bridge. | 03-12-2015 |
| 20150041898 | BULK FINFET SEMICONDUCTOR-ON-NOTHING INTEGRATION - Methods and structures for forming fully insulated finFETs beginning with a bulk semiconductor substrate are described. Fin structures for finFETs may be formed in two epitaxial layers that are grown over a bulk substrate. A first epitaxial layer may be sacrificial. A final gate structure may be formed around the fin structures, and the first epitaxial layer removed to form a void between a fin and the substrate. The void may be filled with an insulator to fully insulate the fin. | 02-12-2015 |
| 20150028349 | METHOD TO INDUCE STRAIN IN 3-D MICROFABRICATED STRUCTURES - Methods and structures for forming strained-channel finFETs are described. Fin structures for finFETs may be formed in two epitaxial layers that are grown over a bulk substrate. A first thin epitaxial layer may be cut and used to impart strain to an adjacent channel region of the finFET via elastic relaxation. The structures exhibit a preferred design range for increasing induced strain and uniformity of the strain over the fin height. | 01-29-2015 |
| 20150008521 | TRANSISTOR HAVING A STRESSED BODY - A transistor includes a body and a semiconductor region configured to stress a portion of the body. For example, stressing a channel of the transistor may increase the mobility of carriers in the channel, and thus may reduce the “on” resistance of the transistor. For example, the substrate, source/drain regions, or both the substrate and source/drain regions of a PFET may be doped to compressively stress the channel so as to increase the mobility of holes in the channel. Or, the substrate, source/drain regions, or both the substrate and source/drain regions of an NFET may be doped to tensile stress the channel so as to increase the mobility of electrons in the channel. | 01-08-2015 |
| 20140357060 | METHOD FOR THE FORMATION OF FIN STRUCTURES FOR FINFET DEVICES - A SOI substrate layer formed of a silicon semiconductor material includes adjacent first and second regions. A portion of the silicon substrate layer in the second region is removed such that the second region retains a bottom portion made of the silicon semiconductor material. An epitaxial growth of a silicon-germanium semiconductor material is made to cover the bottom portion. Germanium is then driven from the epitaxially grown silicon-germanium material into the bottom portion to convert the bottom portion to silicon-germanium. Further silicon-germanium growth is performed to define a silicon-germanium region in the second region adjacent the silicon region in the first region. The silicon region is patterned to define a first fin structure of a FinFET of a first (for example, n-channel) conductivity type. The silicon-germanium region is also patterned to define a second fin structure of a FinFET of a second (for example, p-channel) conductivity type. | 12-04-2014 |
| 20140357040 | METHOD OF MAKING A SEMICONDUCTOR DEVICE USING SPACERS FOR SOURCE/DRAIN CONFINEMENT - A method of making a semiconductor device includes forming a first spacer for at least one gate stack on a first semiconductor material layer, and forming a respective second spacer for each of source and drain regions adjacent the at least one gate. Each second spacer has a pair of opposing sidewalls and an end wall coupled thereto. The method includes filling the source and drain regions with a second semiconductor material while the first and second spacers provide confinement. | 12-04-2014 |
| 20140357036 | METHOD OF MAKING A SEMICONDUCTOR DEVICE INCLUDING AN ALL AROUND GATE - A method of making a semiconductor device includes forming an intermediate structure including second semiconductor fin portions above a first semiconductor layer, and top first semiconductor fin portions extending from respective ones of the second semiconductor fin portions. The second semiconductor fin portions are selectively etchable with respect to the top first semiconductor fin portions. A dummy gate is on the intermediate structure. The second semiconductor fin portions are selectively etched to define bottom openings under respective ones of the top first semiconductor fin portions. The bottom openings are filled with a dielectric material. | 12-04-2014 |
| 20140356991 | METHODS OF MAKING AN INKJET PRINT HEAD BY SAWING DISCONTINUOUS SLOTTED RECESSES - A method of making an inkjet print head may include forming, by sawing with a rotary saw blade, first discontinuous slotted recesses in a first surface of a wafer. The first discontinuous slotted recesses may be arranged in parallel, spaced apart relation. The method may further include forming, by sawing with the rotary saw blade, second discontinuous slotted recesses in a second surface of the wafer aligned and coupled in communication with the first continuous slotted recesses to define through-wafer channels. In another embodiment, the first and second plurality of discontinuous recesses may be formed by respective first and second rotary saw blades. | 12-04-2014 |
| 20140356990 | METHODS OF MAKING INKJET PRINT HEADS USING A SACRIFICIAL SUBSTRATE LAYER - A method of making inkjet print heads may include forming a first wafer including a sacrificial substrate layer, and a first dielectric layer thereon having first openings therein defining inkjet orifices. The method may also include forming a second wafer having inkjet chambers defined thereon, and joining the first and second wafers together so that each inkjet orifice is aligned with a respective inkjet chamber. The method may further include removing the sacrificial substrate layer thereby defining the inkjet print heads. | 12-04-2014 |
| 20140354736 | METHOD OF MAKING INKJET PRINT HEADS BY FILLING RESIDUAL SLOTTED RECESSES AND RELATED DEVICES - A method of making an inkjet print head may include forming, by sawing with a rotary saw blade, continuous slotted recesses in a first surface of a wafer. The continuous slotted recesses may be arranged in parallel, spaced apart relation, and each continuous slotted recess may extend continuously across the first surface. The method may further include forming discontinuous slotted recesses in a second surface of the wafer to be aligned and coupled in communication with the continuous slotted recesses to define alternating through-wafer channels and slotted recess portions. The method may further include selectively filling the residual slotted recess portions to define through-wafer ink channels. | 12-04-2014 |
| 20140353753 | FIN FIELD EFFECT TRANSISTOR DEVICE WITH REDUCED OVERLAP CAPACITANCE AND ENHANCED MECHANICAL STABILITY - Improved fin field effect transistor (FinFET) devices and methods for fabrication thereof. In one aspect, a method for fabricating a FinFET device comprises: a silicon substrate on which a silicon epitaxial layer is grown is provided. Sacrificial structures on the substrate are formed from the epitaxial layer. A blanket silicon layer is formed over the sacrificial structures and exposed substrate portions, the blanket silicon layer having upper and lower portions of uniform thickness and intermediate portions interposed between the upper and lower portions of non-uniform thickness and having an angle of formation. An array of semiconducting fins is formed from the blanket silicon layer and a non-conformal layer formed over the blanket layer. The sacrificial structures are removed and the resulting void filled with isolation structures under the channel regions. Source and drain are formed in the source/drain regions during a fin merge of the FinFET. | 12-04-2014 |
| 20140353718 | SILICON-ON-NOTHING TRANSISTOR SEMICONDUCTOR STRUCTURE WITH CHANNEL EPITAXIAL SILICON-GERMANIUM REGION - An improved transistor with channel epitaxial silicon and methods for fabrication thereof. In one aspect, a method for fabricating a transistor includes: forming a gate stack structure on an epitaxial silicon region, a width dimension of the epitaxial silicon region approximating a width dimension of the gate stack structure; encapsulating the epitaxial silicon region under the gate stack structure with sacrificial spacers formed on both sides of the gate stack structure and the epitaxial silicon region; forming a channel of the transistor having a width dimension that approximates that of the epitaxial silicon region and the gate stack structure, the epitaxial silicon region and the gate stack structure formed on the channel of the transistor; removing the sacrificial spacers; and growing a raised epitaxial source and drain from the silicon substrate, with portions of the raised epitaxial source and drain in contact with the epitaxial silicon region. | 12-04-2014 |
| 20140353717 | SILICON-ON-NOTHING TRANSISTOR SEMICONDUCTOR STRUCTURE WITH CHANNEL EPITAXIAL SILICON REGION - An improved transistor with channel epitaxial silicon. In one aspect, a method of fabrication includes: forming a gate stack structure on an epitaxial silicon region disposed on a substrate, a width dimension of the epitaxial silicon region approximating a width dimension of the gate stack structure; and growing a raised epitaxial source and drain from the substrate, the raised epitaxial source and drain in contact with the epitaxial silicon region and the gate stack structure. For a SRAM device, further: removing an epitaxial layer in contact with the silicon substrate and the raised source and drain and to which the epitaxial silicon region is coupled leaving a space above the silicon substrate and under the raised epitaxial source and drain; and filling the space with an insulating layer and isolating the raised epitaxial source and drain and a channel of the transistor from the silicon substrate. | 12-04-2014 |
| 20140347709 | METHOD AND APPARATUS FOR FORMING DIGITAL IMAGES - A method and apparatus for acquiring a corrected digital image of an object includes a digital camera operable to capture a plurality of color component images, an imager body and a support arm. The support arm is coupled to the imager body and adapted to support the digital camera. An image processor is provided to produce corrected color component images and an image combiner is provided to combine the corrected color component images to form the corrected digital image. The camera is moveable to more than one position to enable to formation of three-dimensional images or images with increased depth of focus. | 11-27-2014 |
| 20140347502 | METHOD AND APPARATUS FOR WAVELENGTH SPECIFIC CORRECTION OF DISTORTION IN DIGITAL IMAGES - A method and apparatus for digital image correction in which a plurality of received color component arrays received from a digital camera are each corrected for distortion dependent upon the color associated with the array. Other corrections may also be applied, such as for sensitivity non-uniformity in the sensing array or illumination non-uniformity. The corrected color component arrays for each of the plurality of color components are combined to form a corrected digital image. The method and apparatus may be integrated with digital cameras in a variety of applications including, but not limited to, digital document imaging. | 11-27-2014 |
| 20140340450 | INK JET PRINTHEAD DEVICE WITH COMPRESSIVE STRESSED DIELECTRIC LAYER - An ink jet printhead device includes a substrate and at least one first dielectric layer above the substrate. A resistive layer is above the at least one first dielectric layer. An electrode layer is above the resistive layer and defines first and second electrodes coupled to the resistive layer. At least one second dielectric layer is above the electrode layer and contacts the resistive layer through the at least one opening. The at least one second dielectric layer has a compressive stress magnitude of at least 340 MPa. | 11-20-2014 |
| 20140320007 | POWER CONVERTER FOR INTERFACING A FLUORESCENT LIGHTING BALLAST TO A LIGHT EMITTING DIODE LAMP - An AC/DC power converter is coupled between a fluorescent ballast circuit and a set of light emitting diodes (LEDs) forming an LED lamp. The power converter converts an AC output from the ballast circuit to a DC current applied to drive operation of the LEDs. The power converter transforms and rectifies the AC output from the ballast circuit to generate a DC output current. An open load protection circuit is coupled to protect the ballast circuit when the LED lamp is not connected. Current control is provided by a transistor having a source/drain conduction path coupled to shunt the DC output current in response to a control signal having a duty cycle generated as a function of a zero-crossing of the AC output and a sensed value of the DC output current applied to the LED lamp. | 10-30-2014 |
| 20140312461 | DEFECTIVE P-N JUNCTION FOR BACKGATED FULLY DEPLETED SILICON ON INSULATOR MOSFET - Methods for semiconductor fabrication include forming a well in a semiconductor substrate. A pocket is formed within the well, the pocket having an opposite doping polarity as the well to provide a p-n junction between the well and the pocket. Defects are created at the p-n junction such that a leakage resistance of the p-n junction is decreased. | 10-23-2014 |
| 20140312423 | SIMPLIFIED MULTI-THRESHOLD VOLTAGE SCHEME FOR FULLY DEPLETED SOI MOSFETS - A method for semiconductor fabrication includes providing channel regions on a substrate including at least one Silicon Germanium (SiGe) channel region, the substrate including a plurality of regions including a first region and a second region. Gate structures are formed for a first n-type field effect transistor (NFET) and a first p-type field effect transistor (PFET) in the first region and a second NFET and a second PFET in the second region, the gate structure for the first PFET being formed on the SiGe channel region. The gate structure for the first NFET includes a gate material having a first work function and the gate structures for the first PFET, second NFET and second PFET include a gate material having a second work function such that multi-threshold voltage devices are provided. | 10-23-2014 |
| 20140299938 | METHODS AND DEVICES FOR ENHANCING MOBILITY OF CHARGE CARRIERS - Methods and devices for enhancing mobility of charge carriers. An integrated circuit may include semiconductor devices of two types. The first type of device may include a metallic gate and a channel strained in a first manner. The second type of device may include a metallic gate and a channel strained in a second manner. The gates may include, collectively, three or fewer metallic materials. The gates may share a same metallic material. A method of forming the semiconductor devices on an integrated circuit may include depositing first and second metallic layers in first and second regions of the integrated circuit corresponding to the first and second gates, respectively. | 10-09-2014 |
| 20140299936 | INTEGRATED CIRCUIT DEVICES AND FABRICATION TECHNIQUES - Integrated circuit devices and fabrication techniques. A semiconductor device fabrication method may include doping, in a same processing step, first and second portions of a substrate of an integrated circuit. The first portion corresponds to a doped region of a semiconductor device. The second portion corresponds to a via contact. The method may further include, after the doping, forming the gate of the semiconductor device. | 10-09-2014 |
| 20140299880 | LAYER FORMATION WITH REDUCED CHANNEL LOSS - Insulating layers can be formed over a semiconductor device region and etched in a manner that substantially reduces or prevents the amount of etching of the underlying channel region. A first insulating layer can be formed over a gate region and a semiconductor device region. A second insulating layer can be formed over the first insulating layer. A third insulating layer can be formed over the second insulating layer. A portion of the third insulating layer can be etched using a first etching process. A portion of the first and second insulating layers beneath the etched portion of the third insulating layer can be etched using at least a second etching process different from the first etching process. | 10-09-2014 |
| 20140298122 | DUAL MASTER JTAG METHOD, CIRCUIT, AND SYSTEM - A dual-master controller includes a plurality of JTAG data registers including a controller-mode register that stores information indicating a standard JTAG or a processor-controlled mode of operation. A JTAG TAP controller receives control signals over a standard test access port and a processor controller receives processor control signals over an external processor bus. A selection multiplexer outputs either signals on the standard JTAG access port or the external processor bus responsive to a JTAG mode selection signal. A logic circuit activates the JTAG mode selection signal responsive to the force JTAG signal being active or information in the controller-mode register indicating the standard JTAG mode, and deactivates the JTAG mode selection signal responsive to the force JTAG signal being deactivated or the information in the controller-mode register indicating the processor-controller mode. An instruction decoder and multiplexer circuit applies control signals from the selection multiplexer to control the JTAG data registers. | 10-02-2014 |
| 20140293687 | SEMICONDUCTOR DEVICE WITH PCM MEMORY CELLS AND NANOTUBES AND RELATED METHODS - A semiconductor device may include a substrate, and an array of PCM memory cells above the substrate. Each PCM memory cell may include first and second vertically aligned electrodes, a first dielectric layer between the first and second electrodes, a carbon nanotube extending vertically through the first dielectric layer from the second electrode and toward the first electrode, and a PCM body between the first electrode and the at least one carbon nanotube. | 10-02-2014 |
| 20140291842 | ENHANCED FLIP-CHIP DIE ARCHITECTURE - A method of assembling a multi-chip electronic device into a thin electronic package entails inverting a flip-chip die arrangement over a hollow substrate, stacking additional dies on the hollow substrate to form a multi-chip electronic device, and encapsulating the multi-chip electronic device. Containment of the encapsulant can be achieved by joining split substrate portions, or by reinforcing a hollow unitary substrate, using a removable adhesive film. Use of the removable adhesive film facilitates surrounding the multi-chip electronic device with the encapsulant. The adhesive film can also prevent encapsulant from creeping around the substrate to an underside of the substrate that supports solder ball pads for subsequent attachment to a ball grid array (BGA) or a land grid array (LGA). | 10-02-2014 |
| 20140291750 | MEMORY DEVICE HAVING MULTIPLE DIELECTRIC GATE STACKS WITH FIRST AND SECOND DIELECTRIC LAYERS AND RELATED METHODS - A memory device may include a semiconductor substrate, and a memory transistor in the semiconductor substrate. The memory transistor may include source and drain regions in the semiconductor substrate and a channel region therebetween, and a gate stack having a first dielectric layer over the channel region, a second dielectric layer over the first dielectric layer, a first diffusion barrier layer over the second dielectric layer, a first electrically conductive layer over the first diffusion barrier layer, a second diffusion barrier layer over the first electrically conductive layer, and a second electrically conductive layer over the second diffusion barrier layer. The first and second dielectric layers may include different dielectric materials, and the first diffusion barrier layer may be thinner than the second diffusion barrier layer. | 10-02-2014 |
| 20140254292 | OVERLAPPING INTERCONNECT SIGNAL LINES FOR REDUCING CAPACITIVE COUPLING EFFECTS - Described herein are various principles for designing, manufacturing, and operating integrated circuits having functional components and one or more metal interconnect layers, where the dimensions of signal lines of the metal interconnect layers are larger than dimensions of the functional components. In some embodiments, a signal line may have a width greater than a width of a terminal of a functional component to which the signal line is connected. In some embodiments, two functional components formed in a same functional layer of the integrated circuit may be connected to metal signal lines in different metal interconnect layers. Further, the metal signal lines of the different metal interconnect layers may overlap some distance. | 09-11-2014 |
| 20140240863 | MAX-LOG-MAP EQUIVALENCE LOG LIKELIHOOD RATIO GENERATION SOFT VITERBI ARCHITECTURE SYSTEM AND METHOD - A modified soft output Viterbi algorithm (SOVA) detector receives a sequence of soft information values and determines a best path and an alternate path for each soft information value and further determines, when the best and alternate paths lead to the same value for a given soft information value, whether there is a third path departing from the alternate path that leads to an opposite decision with respect to the best path for a given soft information value. The SOVA detector then considers this third path when updating the reliability of the best path. The modified SOVA detector achieves max-log-map equivalence effectively through the Fossorier approach and includes modified reliability metric units for the first N stages of the SOVA detector, where N is the memory depth of a given path, and includes conventional reliability metric units for the remaining stages of the detector. | 08-28-2014 |
| 20140217943 | DETERMINING A POSITION OF A MOTOR USING AN ON-CHIP COMPONENT - An embodiment of a motor controller includes first and second supply nodes, a motor-coil node, an isolator, a motor driver, and a motor position signal generator. The isolator is coupled between the first and second supply nodes, and the motor driver is coupled to the second supply node and to the motor-coil node. The motor position signal generator is coupled to the isolator and is operable to generate, in response to the isolator, a motor-position signal that is related to a position of a motor having at least one coil coupled to the motor-coil node. By generating the motor-position signal in response to the isolator, the motor controller or another circuit may determine the at-rest or low-speed position of a motor without using an external coil-current-sense circuit. | 08-07-2014 |
| 20140217938 | MOTOR CONTROLLER WITH DRIVE-SIGNAL CONDITIONING - An embodiment of a motor controller includes a motor driver and a signal conditioner. The motor driver is operable to generate a motor-coil drive signal having a first component at a first frequency, and the signal conditioner is coupled to the motor driver and is operable to alter the first component. For example, if the first component of the motor-coil drive signal causes the motor to audibly vibrate (e.g., “whine”), then the signal conditioner may alter the amplitude or phase of the first component to reduce the vibration noise to below a threshold level. | 08-07-2014 |
| 20140210010 | METHOD TO FORM FINFET/TRIGATE DEVICES ON BULK SEMICONDUCTOR WAFERS - A method for fabricating a finFET device having an insulating layer that insulates the fin from a substrate is described. The insulating layer can prevent leakage current that would otherwise flow through bulk semiconductor material in the substrate. The structure may be fabricated starting with a bulk semiconductor substrate, without the need for a semiconductor-on-insulator substrate. Fin structures may be formed by epitaxial growth, which can improve the uniformity of fin heights in the devices. | 07-31-2014 |
| 20140185510 | WGA STA POWER SAVING - This invention relates to switching power saving modes and rescheduling communication frames for various periods of a beacon interval (BI) defined under WGA Draft Specification 0.8 for the personal basic service set (PBSS) and infrastructure BSS to achieve further power savings and other advantages. Stations can be awake during a contention-based period (CBP) if it is in active state and can schedule frames during a service period (SP) to allow the assigned receiver to transmit to the assigned initiator. Stations in a group can schedule a group address frame to be sent during the CBP and group SP of a specific periodic BI. Stations in peer-to-peer connection may directly notify its peer stations of its power saving mode and wakeup schedule. Stations of an infrastructure basic service set (BSS) can also use the same power saving mechanism as stations of a PBSS noting a difference where each BI will be an access point's (AP's) awake BI. | 07-03-2014 |
| 20140183735 | SYSTEM AND METHOD OF COMBINING DAMASCENES AND SUBTRACT METAL ETCH FOR ADVANCED BACK END OF LINE INTERCONNECTIONS - Metal interconnections are formed in an integrated by combining damascene processes and subtractive metal etching. A wide trench is formed in a dielectric layer. A conductive material is deposited in the wide trench. Trenches are etched in the conductive material to delineate a plurality of metal plugs each contacting a respective metal track exposed by the wide trench. | 07-03-2014 |
| 20140176587 | ELECTRONIC SYSTEM AND METHOD FOR SELECTIVELY ALLOWING ACCESS TO A SHARED MEMORY - An electronic system, an integrated circuit and a method for display are disclosed. The electronic system contains a first device, a memory and a video/audio compression/decompression device such as a decoder/encoder. The electronic system is configured to allow the first device and the video/audio compression/decompression device to share the memory. The electronic system may be included in a computer in which case the memory is a main memory. Memory access is accomplished by one or more memory interfaces, direct coupling of the memory to a bus, or direct coupling of the first device and decoder/encoder to a bus. An arbiter selectively provides access for the first device and/or the decoder/encoder to the memory based on priority. The arbiter may be monolithically integrated into a memory interface. The decoder may be a video decoder configured to comply with the MPEG-2 standard. The memory may store predicted images obtained from a preceding image. | 06-26-2014 |
| 20140175610 | ELECTROSTATIC DISCHARGE DEVICES FOR INTEGRATED CIRCUITS - A junction diode array for use in protecting integrated circuits from electrostatic discharge can be fabricated to include symmetric and/or asymmetric junction diodes of various sizes. The diodes can be configured to provide low voltage and current discharge via unencapsulated contacts, or high voltage and current discharge via encapsulated contacts. Use of tilted implants in fabricating the junction diode array allows a single hard mask to be used to implant multiple ion species. Furthermore, a different implant tilt angle can be chosen for each species, along with other parameters, (e.g., implant energy, implant mask thickness, and dimensions of the mask openings) so as to craft the shape of the implanted regions. Isolation regions can be inserted between already formed diodes, using the same implant hard mask if desired. A buried oxide layer can be used to prevent diffusion of dopants into the substrate beyond a selected depth. | 06-26-2014 |
| 20140175554 | FULLY SUBSTRATE-ISOLATED FINFET TRANSISTOR - Channel-to-substrate leakage in a FinFET device can be prevented by inserting an insulating layer between the semiconducting channel (fin) and the substrate. Similarly, source/drain-to-substrate leakage in a FinFET device can be prevented by isolating the source/drain regions from the substrate by inserting an insulating layer between the source/drain regions and the substrate. The insulating layer isolates the conduction path from the substrate both physically and electrically, thus preventing current leakage. If an array of semiconducting fins is made up of a multi-layer stack, the bottom material can be removed thus yielding a fin array that is suspended above the silicon surface. A resulting gap underneath the remaining top fin material can then be filled in with oxide to better support the fins and to isolate the array of fins from the substrate. The resulting FinFET device is fully substrate-isolated in both the gate region and the source/drain regions. | 06-26-2014 |
| 20140170834 | METHOD FOR MANUFACTURING A HYBRID SOI/BULK SEMICONDUCTOR WAFER - A method for manufacturing a hybrid SOI/bulk substrate, including the steps of starting from an SOI wafer comprising a single-crystal semiconductor layer called SOI layer, on an insulating layer, on a single-crystal semiconductor substrate; depositing on the SOI layer at least one masking layer and forming openings crossing the masking layer, the SOI layer, and the insulating layer, to reach the substrate; growing by a repeated alternation of selective epitaxy and partial etching steps a semiconductor material; and etching insulating trenches surrounding said openings filled with semiconductor material, while encroaching inwards over the periphery of the openings. | 06-19-2014 |
| 20140160801 | HIGH POWER FACTOR PRIMARY REGULATED OFFLINE LED DRIVER - A fly-back type switched current regulator includes a primary transformer winding coupled to receive a rectified DC signal derived from an AC signal. The drain of a power transistor is coupled to the primary winding, with the source of the power transistor coupled to an input of a comparison circuit and a primary transformer winding sense resistor. A control terminal of the power transistor is coupled to an output of the comparison circuit. A capacitor stores a variable reference signal for application at a first capacitor terminal to another input of the differential circuit. The variable reference signal is compared to a winding current signal generated by the sense resistor by the comparison circuit. An injection circuit applies an AC signal derived from the rectified DC signal to a second terminal of the capacitor so as to modulate the stored variable reference signal. The regulator is coupled to drive LEDs. | 06-12-2014 |
| 20140151759 | FACET-FREE STRAINED SILICON TRANSISTOR - The presence of a facet or a void in an epitaxially grown crystal indicates that crystal growth has been interrupted by defects or by certain material boundaries. Faceting can be suppressed during epitaxial growth of silicon compounds that form source and drain regions of strained silicon transistors. It has been observed that faceting can occur when epitaxial layers of certain silicon compounds are grown adjacent to an oxide boundary, but faceting does not occur when the epitaxial layer is grown adjacent to a silicon boundary or adjacent to a nitride boundary. Because epitaxial growth of silicon compounds is often necessary in the vicinity of isolation trenches that are filled with oxide, techniques for suppression of faceting in these areas are of particular interest. One such technique, presented herein, is to line the isolation trenches with SiN to provide a barrier between the oxide and the region in which epitaxial growth is intended. | 06-05-2014 |
| 20140151746 | FINFET DEVICE WITH ISOLATED CHANNEL - Despite improvements in FinFETs and strained silicon devices, transistors continue to suffer performance degradation as device dimensions shrink. These include, in particular, leakage of charge between the semiconducting channel and the substrate. An isolated channel FinFET device prevents channel-to-substrate leakage by inserting an insulating layer between the channel (fin) and the substrate. The insulating layer isolates the fin from the substrate both physically and electrically. To form the isolated FinFET device, an array of bi-layer fins can be grown epitaxially from the silicon surface, between nitride columns that provide localized insulation between adjacent fins. Then, the lower fin layer can be removed, while leaving the upper fin layer, thus yielding an interdigitated array of nitride columns and semiconducting fins suspended above the silicon surface. A resulting gap underneath the upper fin layer can then be filled in with oxide to isolate the array of fin channels from the substrate. | 06-05-2014 |
| 20140145666 | INTEGRATED CIRCUIT FOR MOTOR DRIVE CONTROLLER APPLICATIONS - An integrated circuit is configured for controlling automobile door lock motors. The circuit includes half-bridge driver circuits, with each half-bridge driver circuit having an output node configured to be coupled to a door lock motor. A control circuit is configured to control driver operation of the half-bridge driver circuits. A current regulator circuit senses current sourced by or sunk by at least one of the half-bridge circuits. The control circuit responds to the current regulator circuit and the sensed current by controlling the driver operation to provide for a regulated current to be sourced by or sunk by said half-bridge circuit. The control circuit further controls the half-bridge driver circuits to enter a tri-state mode in order to support the making of BEMF measurements on the motor. | 05-29-2014 |
| 20140141588 | STRAINED TRANSISTOR STRUCTURE - A strain enhanced transistor is provided having a strain inducing layer overlying a gate electrode. The gate electrode has sloped sidewalls over the channel region of the transistor. | 05-22-2014 |
| 20140140423 | PILOT PATTERN FOR OBSERVATION-SCALAR MIMO-OFDM - In an embodiment, a transmitter includes a transmission path configurable to generate first pilot clusters in response to a matrix, each first pilot cluster including a respective first pilot subsymbol in a first cluster position and a respective second pilot subsymbol in a second cluster position such that a vector formed by the first pilot subsymbols is orthogonal to a vector formed by the second pilot subsymbols, the matrix having a dimension related to a number of cluster positions in each of the first pilot clusters. For example, where such a transmitter transmits simultaneous orthogonal-frequency-division-multiplexed (OFDM) signals (e.g., MIMO-OFDM signals) over respective channels that may impart inter-carrier interference (ICI) to the signals due to Doppler spread, the pattern of the pilot symbols that compose the pilot clusters may allow a receiver of these signals to estimate the responses of these channels more accurately than conventional receivers. | 05-22-2014 |
| 20140138837 | SANDWICHED DIFFUSION BARRIER AND METAL LINER FOR AN INTERCONNECT STRUCTURE - A trench is opened in a dielectric layer. The trench is then lined with a sandwiched diffusion barrier and metal liner structure and a metal seed layer. The sandwiched diffusion barrier and metal liner structure includes a conformal metal liner layer sandwiched between a first diffusion barrier layer and a second diffusion barrier layer. The metal seed layer is at least lightly doped. The lined trench is then filled by electroplating with a metal fill material. A dielectric cap layer is then deposited over the metal filled trench. Dopant from the doped metal seed layer is then migrated to an interface between the metal filled trench and the dielectric cap layer to form a self-aligned metal cap. | 05-22-2014 |
| 20140138834 | PREVENTING SHORTING DENDRITIC MIGRATION BETWEEN ELECTRODES - In a general aspect, an integrated circuit package includes a first electrode and a second electrode on a support substrate. The first electrode and the second electrode are configured to be electrically coupled to a voltage differential. A dendritic migration of a migratory species can develop under the voltage differential and a non-hermetic environment. The dendritic migration is interrupted by a floating electrical barrier mounted onto the support substrate between the first electrode and the second electrode. The electrical barrier includes a dam for preventing the metal migration. The dam has a height approximately equal to or greater than the largest dimension of a single atom of the migratory species. The first electrode and the second electrode can be mounted on the same side of the support substrate, or on two opposite sides of the support substrate. | 05-22-2014 |
| 20140138832 | COPPER SEED LAYER FOR AN INTERCONNECT STRUCTURE HAVING A DOPING CONCENTRATION LEVEL GRADIENT - A trench is opened in a dielectric layer. The trench is then lined with a barrier layer and a metal seed layer. The metal seed layer is non-uniformly doped and exhibits a vertical doping gradient varying as a function of trench depth. The lined trench is then filled with a metal fill material. A dielectric cap layer is then deposited over the metal filled trench. Dopant from the non-uniformly doped metal seed layer is then migrated to an interface between the metal filled trench and the dielectric cap layer to form a self-aligned metal cap. | 05-22-2014 |
| 20140138775 | DUAL EPI CMOS INTEGRATION FOR PLANAR SUBSTRATES - Silicon germanium regions are formed adjacent gates electrodes over both n-type and p-type regions in an integrated circuit. A hard mask patterned by lithography then protects structures over the p-type region while the silicon germanium is selectively removed from over the n-type region, even under remnants of the hard mask on sidewall spacers on the gate electrode. Silicon germanium carbon is epitaxially grown adjacent the gate electrode in place of the removed silicon germanium, and source/drain extension implants are performed prior to removal of the remaining hard mask over the p-type region structures. | 05-22-2014 |
| 20140134808 | RECESSED GATE FIELD EFFECT TRANSISTOR - A semiconductor device having a gate positioned in a recess between the source region and a drain region that are adjacent either side of the gate electrode. A channel region is below a majority of the source region as well as a majority of the drain region and the entire gate electrode. | 05-15-2014 |
| 20140124865 | SEMICONDUCTOR DEVICE INCLUDING LOW-K DIELECTRIC CAP LAYER FOR GATE ELECTRODES AND RELATED METHODS - A semiconductor device may include a substrate, source and drain regions in the substrate, a recessed epitaxial channel layer in the substrate between the source and drain regions, and a high-K gate dielectric layer overlying the recessed epitaxial channel layer. The semiconductor device may further include a gate electrode overlying the high-K gate dielectric layer, a dielectric cap layer in contact with top and sidewall portions of the gate electrode, the dielectric cap layer having a lower dielectric constant than the high-K gate dielectric layer, and source and drain contacts coupled to the source and drain regions. | 05-08-2014 |
| 20140119268 | ROBUST UNICAST/BROADCAST/MULTICAST COMMUNICATION PROTOCOL - Methods and apparatus for implementing a robust unicast/broadcast/multicast protocol are provided. In one aspect, a method of avoiding collision of intra-basic service set unicast, broadcast or multicast transmissions notifies stations in the basic service set of a reserved transmit opportunity for a unicast, broadcast or multicast transmission. Transmissions from at least one station in the basic service set are deferred until after the reserved unicast, broadcast or multicast transmit opportunity. | 05-01-2014 |
| 20140114492 | System and Method for a Power Line Modem - In accordance with an embodiment, a method of operating an electronic system includes detecting an incoming transmission on a power line, and modifying a switching behavior of a switched-mode power supply coupled to the power line upon detecting the incoming transmission. Modifying reduces the level of interference produced by the switched-mode power supply. | 04-24-2014 |
| 20140111882 | CONSTRAINED ON-THE-FLY INTERLEAVER ADDRESS GENERATOR CIRCUITS, SYSTEMS, AND METHODS - An interleave address generation circuit includes a plurality of linear feedback shift registers operable to generate addresses for permuting a data block in a first domain to a data block in a second domain on a subword basis. The interleave address generation circuit is operable to generate the lane addresses for each subword and the linear feedback registers configured to generate circulant addresses and sub-circulant address to map bits in each subword in the data block in the first domain to a corresponding subword in the second domain. | 04-24-2014 |
| 20140106529 | FINFET DEVICE WITH SILICIDED SOURCE-DRAIN REGIONS AND METHOD OF MAKING SAME USING A TWO STEP ANNEAL - A thermal annealing flow process includes the steps of: depositing a metal or metal alloy on a silicon semiconductor structure, performing a first annealing of a rapid thermal anneal (RTA) type to produce a metal rich phase in a portion of the silicon semiconductor structure, removing unreacted metal or metal alloy and performing a second annealing as a millisecond annealing at a temperature that is below a melt temperature of the silicon material present in the silicon semiconductor structure. | 04-17-2014 |
| 20140105419 | ASYMMETRIC POLYNOMIAL PSYCHOACOUSTIC BASS ENHANCEMENT - Psychoacoustic bass audio signal enhancement can be accomplished using a monotonic, asymmetric polynomial distortion. A non-linear process applies a monotonic, asymmetric polynomial distortion function that has continuous first and second derivatives to generate even and odd harmonics of missing fundamental frequencies. This polynomial distortion produces the desired psychoacoustic effect with a fairly rapid roll-off so as to avoid unpleasant aliasing. Moreover, the lack of first-order discontinuities prevents clicks or glitches. | 04-17-2014 |
| 20140105418 | FREQUENCY DOMAIN MULTIBAND DYNAMICS COMPRESSOR WITH SPECTRAL BALANCE COMPENSATION - A multiband dynamics compressor implements a solution for minimizing unwanted changes to the long-term frequency response. The solution essentially proposes undoing the multiband compression in a controlled manner using much slower smoothing times. In this regard, the compensation provided acts more like an equalizer than a compressor. What is applied is a very slowly time-varying, frequency-dependent post-gain (make-up gain) that attempts to restore the smoothed long-term level of each compressor band. | 04-17-2014 |
| 20140105131 | FAST INITIAL LINK SETUP (FILS) FRAME CONTENT FOR A WIRELESS NETWORK - A wireless network access point generates a fast initial link setup (FILS) discovery frame for broadcast to one or more wireless stations. The wireless network access point supports many operating channels including a primary channel. The FILS discovery frame includes a data field populated with an identification of a channel number for that primary channel of the wireless network access point. The FILS discovery frame includes another data field populated with a primary channel operating class identification. The broadcast FILS discovery frame further includes data indicating whether indicating whether multiple BSSIDs are supported. An FD capability field of the FILS discovery frame includes sub-fields indicating one or more of operation channel width, PHY type of the wireless access point, number of spatial streams supported by the wireless access point and multiple BSSIDs support provided by the wireless access point. | 04-17-2014 |
| 20140105098 | FRAME SPECIFICATION FOR A WIRELESS NETWORK COMMUNICATION - A compressed header format is used for messages transmitted in a wireless network. The compressed header includes a first address field and a frame control field including at least one bit specifying whether the first address is for an access point of the wireless communications network. The frame control field may further include at least one additional bit identifying whether the frame is being relayed by a relay node positioned between the access point and a wireless station. The frame control field may further include at least one further bit identifying whether AID is used for the first address field. | 04-17-2014 |
| 20140104714 | HIGH-RATE REVESE-ORDER RUN-LENGTH-LIMITED CODE - A system and method for encoding a stream of bits with a run-length limited high-rate reverse order encoding schema. According to one embodiment, an RLL encoding block includes a receiver having a precoder operable to receive a stream of N-bits having symbols of M-bits in length, a histogram operable to identify an index symbol of M-bits that does not occur within the received stream of N-bits. It is this index symbol that may be used as the key to encoding a block of symbols so as to ensure unique decodability when RLL decoding. Finally, an encoder operable to perform an exclusive-or operation on each symbol with the next symbol stored in the stream. Such an encoding system only adds one symbol of M bits in length to a block of N bits and still results in a stream of bits sufficient to support high-rate requirements and strict timing loop control. | 04-17-2014 |
| 20140099773 | DUAL SHALLOW TRENCH ISOLATION LINER FOR PREVENTING ELECTRICAL SHORTS - A shallow trench is formed to extend into a handle substrate of a semiconductor-on-insulator (SOI) layer. A dielectric liner stack of a dielectric metal oxide layer and a silicon nitride layer is formed in the shallow trench, followed by deposition of a shallow trench isolation fill portion. The dielectric liner stack is removed from above a top surface of a top semiconductor portion, followed by removal of a silicon nitride pad layer and an upper vertical portion of the dielectric metal oxide layer. A divot laterally surrounding a stack of a top semiconductor portion and a buried insulator portion is filled with a silicon nitride portion. Gate structures and source/drain structures are subsequently formed. The silicon nitride portion or the dielectric metal oxide layer functions as a stopping layer during formation of source/drain contact via holes, thereby preventing electrical shorts between source/drain contact via structures and the handle substrate. | 04-10-2014 |
| 20140099769 | METHOD TO PROTECT AGAINST CONTACT RELATED SHORTS ON UTBB - Isolation trenches are etched through an active silicon layer overlying a buried oxide on a substrate into the substrate, and through any pad dielectric(s) on the active silicon layer. Lateral epitaxial growth of the active silicon layer forms protrusions into the isolation trenches to a lateral distance of at least about 5 nanometers, and portions of the isolation trenches around the protrusions are filled with dielectric. Raised source/drain regions are formed on portions of the active silicon layer including a dielectric. As a result, misaligned contacts passing around edges of the raised source/drain regions remain spaced apart from sidewalls of the substrate in the isolation trenches. | 04-10-2014 |
| 20140099763 | FORMING SILICON-CARBON EMBEDDED SOURCE/DRAIN JUNCTIONS WITH HIGH SUBSTITUTIONAL CARBON LEVEL - Embodiment of the present invention provides a method of forming a semiconductor device. The method includes providing a semiconductor substrate; epitaxially growing a silicon-carbon layer on top of the semiconductor substrate; amorphizing the silicon-carbon layer; covering the amorphized silicon-carbon layer with a stress liner; and subjecting the amorphized silicon-carbon layer to a solid phase epitaxy (SPE) process to form a highly substitutional silicon-carbon film. In one embodiment, the highly substitutional silicon-carbon film is formed to be embedded stressors in the source/drain regions of an nFET transistor, and provides tensile stress to a channel region of the nFET transistor for performance enhancement. | 04-10-2014 |
| 20140092797 | ENHANCEMENT OF LOW POWER MEDIUM ACCESS STAs - Enhanced low power medium access (LPMA) processes involve the enhanced LPMA STA indicating low power capabilities during association and being allocated an AID. The AID(s) for one or a group of enhanced LPMA STA(s) are included in one TIM sent during a different BEACON interval than the AID(s) for another or another group of enhanced LPMA STA(s). In addition, or alternatively, the AID(s) for enhanced LPMA STA(s) are located at an edge of the AID set within a TIM, a portion of the TIM that may be easily truncated and therefore not sent. The enhanced LPMA STAs and associated access point negotiate unique offset and sleepinterval periods for polling or data uplink by the enhanced LPMA STAs. | 04-03-2014 |
| 20140087524 | METHOD FOR PRODUCING A FIELD EFFECT TRANSISTOR WITH IMPLANTATION THROUGH THE SPACERS - The substrate successively includes a support substrate, an electrically insulating layer, a semiconductor material layer, and a gate pattern. The semiconductor material layer and gate pattern are covered by a covering layer. A first doping impurity is implanted in the semiconductor material layer through the covering layer so as to place the thickness of maximum concentration of the first doping impurity in the first layer. The covering layer is partly eliminated so as to form lateral spacers leaving source/drain electrodes free. | 03-27-2014 |
| 20140084465 | SYSTEM AND METHOD OF NOVEL MX TO MX-2 - A plurality of metal tracks are formed in an integrated circuit die in three metal layers stacked within the die. A protective dielectric layer is formed around metal tracks of an intermediate metal layer. The protective dielectric layer acts as a hard mask to define contact vias between metal tracks in the metal layers above and below the intermediate metal layer. | 03-27-2014 |
| 20140084372 | DUAL SHALLOW TRENCH ISOLATION LINER FOR PREVENTING ELECTRICAL SHORTS - A shallow trench is formed to extend into a handle substrate of a semiconductor-on-insulator (SOI) layer. A dielectric liner stack of a dielectric metal oxide layer and a silicon nitride layer is formed in the shallow trench, followed by deposition of a shallow trench isolation fill portion. The dielectric liner stack is removed from above a top surface of a top semiconductor portion, followed by removal of a silicon nitride pad layer and an upper vertical portion of the dielectric metal oxide layer. A divot laterally surrounding a stack of a top semiconductor portion and a buried insulator portion is filled with a silicon nitride portion. Gate structures and source/drain structures are subsequently formed. The silicon nitride portion or the dielectric metal oxide layer functions as a stopping layer during formation of source/drain contact via holes, thereby preventing electrical shorts between source/drain contact via structures and the handle substrate. | 03-27-2014 |
| 20140080304 | INTEGRATED TOOL FOR SEMICONDUCTOR MANUFACTURING - An integrated tool to reduce defects in manufacturing a semiconductor device by reducing queue times during a manufacturing process. The integrated tool may include at least one a polishing tool comprising at least one polishing module and at least one deposition tool comprising at least one deposition chamber. At least one pump-down chamber may connect the polishing tool to the deposition tool. The at least one pump-down chamber includes a passage through which the semiconductor device is passed. Defects in the semiconductor device are reduced by reducing the queue time at various stages of the fabrication process. | 03-20-2014 |
| 20140080229 | ADAPTIVE SEMICONDUCTOR PROCESSING USING FEEDBACK FROM MEASUREMENT DEVICES - A semiconductor processing device and a method of operating the same. The method may include measuring at least one property of a semiconductor wafer and determining a recipe for processing the semiconductor wafer based on the at least one property. The semiconductor wafer may be processed with a plurality of chemical mechanical polishing (CMP) modules based on the determined recipe, wherein the recipe comprises a value of at least one parameter for use by each of the plurality of CMP modules. The measurements may be made in situ or by an inline metrology device. The recipe and various parameters associated with the recipe may be determined by a controller of the semiconductor processing device. | 03-20-2014 |
| 20140078949 | EARLY ENDING OF FRAME RECEPTION - An additional cyclic redundancy check (CRC) is inserted in IEEE 802.11 beacon or data frames prior to the end of the frame, at a location following information sufficient for the receiving station to determine whether the frame is from an overlapping basic service set or intended for a different station and to extract other necessary or useful information such as a time of the next full beacon. Upon detecting the CRC, the receiving STA can terminate reception of the frame early to conserve power, and then enter a low power operational mode to further conserve power. | 03-20-2014 |
| 20140078495 | INLINE METROLOGY FOR ATTAINING FULL WAFER MAP OF UNIFORMITY AND SURFACE CHARGE - An apparatus for performing metrology of a wafer. The apparatus may include a substrate with a plurality of microprobes. A plurality of light sources may direct light onto each of the microprobes. Light reflected from the microprobes may be detected by a plurality of photodetectors thereby generating a detection signal associated with each of the microprobes. A controller may send a driving signal to each of the plurality of microprobes and determine a height profile and a surface charge profile of the wafer based on each of the detection signals. | 03-20-2014 |
| 20140077346 | METHOD AND SYSTEM FOR PRE-MIGRATION OF METAL IONS IN A SEMICONDUCTOR PACKAGE - Pre-migration of metal ions is achieved in a controlled manner to form a migrated metalover which an inhibitor is applied to prevent further migration. In a semiconductor circuit, pre-migration of metal ions is achieved by exposing a joined metal system to water, oxygen and an electrical field in a controlled manner. Conductors, joined to electrically isolating materials, are exposed to electrical fields in such a manner as to form one or more anodes to corresponding cathodes, thus liberating metal ions. The metal ions are then allowed to migrate in a controlled manner from the anode toward the cathode to form a pre-migrated metal. Finally, an inhibitor is applied on top of the pre-migrated metal to prevent further migration. | 03-20-2014 |
| 20140073131 | METHOD TO IMPROVE SEMICONDUCTOR SURFACES AND POLISHING - A method of forming a semiconductor device is disclosed. The method including providing a substrate with at least one insulating layer disposed thereon, the at least one insulating layer including a trench; forming at least one liner layer on the at least one insulating layer; forming a nucleation layer on the at least one liner layer; forming a first metal film on a surface of the nucleation layer; etching the first metal film; and depositing a second metal film on the etched surface of the first metal film, the second metal film substantially forming an overburden above the trench. | 03-13-2014 |
| 20140061824 | MEMS PACKAGING SCHEME USING DIELECTRIC FENCE - A packaging scheme for MEMS device is provided. A method of packaging MEMS device in a semiconductor structure includes forming an insulation fence that surrounds the MEMS device on the semiconductor structure. The method further includes attaching a wafer of dielectric material to the insulation fence. The lid wafer, the insulation fence, and the semiconductor structure enclose the MEMS device. | 03-06-2014 |
| 20140054715 | SEMICONDUCTOR DEVICE WITH AN INCLINED SOURCE/DRAIN AND ASSOCIATED METHODS - A semiconductor device includes a semiconductor substrate having a channel region therein, a gate structure above the channel region, and source and drain regions on opposite sides of the gate structure. A respective contact is on each of the source and drain regions. At least one of the source and drain regions has an inclined upper contact surface with the respective contact. The inclined upper contact surface has at least a 50% greater area than would a corresponding flat contact surface. | 02-27-2014 |
| 20140054706 | MULTI-FIN FINFET DEVICE INCLUDING EPITAXIAL GROWTH BARRIER ON OUTSIDE SURFACES OF OUTERMOST FINS AND RELATED METHODS - A multi-fin FINFET device may include a substrate and a plurality of semiconductor fins extending upwardly from the substrate and being spaced apart along the substrate. Each semiconductor fin may have opposing first and second ends and a medial portion therebetween, and outermost fins of the plurality of semiconductor fins may comprise an epitaxial growth barrier on outside surfaces thereof. The FINFET may further include at least one gate overlying the medial portions of the semiconductor fins, a plurality of raised epitaxial semiconductor source regions between the semiconductor fins adjacent the first ends thereof, and a plurality of raised epitaxial semiconductor drain regions between the semiconductor fins adjacent the second ends thereof. | 02-27-2014 |
| 20140054699 | ELECTRONIC DEVICE INCLUDING SHALLOW TRENCH ISOLATION (STI) REGIONS WITH BOTTOM OXIDE LINER AND UPPER NITRIDE LINER AND RELATED METHODS - An electronic device may include a substrate, a buried oxide (BOX) layer overlying the substrate, at least one semiconductor device overlying the BOX layer, and at least one shallow trench isolation (STI) region in the substrate and adjacent the at least one semiconductor device. The at least one STI region defines a sidewall surface with the substrate and may include an oxide layer lining a bottom portion of the sidewall surface, a nitride layer lining a top portion of the sidewall surface above the bottom portion, and an insulating material within the nitride and oxide layers. | 02-27-2014 |
| 20140054698 | ELECTRONIC DEVICE INCLUDING SHALLOW TRENCH ISOLATION (STI) REGIONS WITH BOTTOM NITRIDE LINER AND UPPER OXIDE LINER AND RELATED METHODS - An electronic device may include a substrate, a buried oxide (BOX) layer overlying the substrate, at least one semiconductor device overlying the BOX layer, and at least one STI region in the substrate and adjacent the at least one semiconductor device. The at least one STI region defines a sidewall surface with the substrate and may include a nitride layer lining a bottom portion of the sidewall surface, an oxide layer lining a top portion of the sidewall surface above the bottom portion, and an insulating material within the nitride and oxide layers. | 02-27-2014 |
| 20140051281 | Passive Cable Adaptor With Battery Charging Capability - A multimedia sink device comprises: 1) a connector configured to be connected to an adaptor cable; 2) detection circuitry configured to detect when the adaptor cable is connected to the connector; and 3) hot plug detection (HPD) circuitry configured to determine if a configuration circuit is coupled to an HPD line of the multimedia sink device. In response to a determination that the configuration circuit is coupled to the HPD line, the HPD circuitry determines if the configuration circuit is associated with the adaptor cable. The HPD circuitry reads configuration data from the configuration circuit associated with the adaptor cable. The configuration data indicates the configuration circuit is resident in the cable adaptor and causes the multimedia sink device to increase a voltage level of a power supply voltage provided by the multimedia sink device to a multimedia source device via the adaptor cable. | 02-20-2014 |
| 20140050221 | INTERCONNECT ARRANGEMENT - An interconnect arrangement includes a plurality of tag allocators. Each tag allocator is configured to receive at least one stream of a plurality of packet units and further configured to tag each packet unit. Each packet unit is tagged with one of a set of n tags where n is greater than two. At least one stream is tagged with a sequence of tags that is different from a sequence of tags used for at least one other of said streams. The interconnect arrangement also includes a router configured to receive a plurality of streams of tagged packet units and to arbitrate between the streams such that packet units having a same tag are output in a group. | 02-20-2014 |
| 20140048976 | METHOD AND SYSTEM FOR DETERMINING AND DISPENSING RESIN FOR A COMPRESSION MOLDING PROCESS FLOW - The present disclosure is directed to a system and method for forming a plurality of packaged dice on a carrier, the carrier including a storage medium configured to store an indication of a total number of unpackaged dice on the carrier. The forming includes providing a quantity of molding compound to a molding module based on the total number of the unpackaged dice on the carrier. The providing includes accessing the indication of the total number of the unpackaged dice on the carrier from the storage medium, determining the quantity of molding compound based on the indication of the total number of unpackaged dice on the carrier, and molding the unpackaged dice into the packaged dice using the quantity of molding compound. | 02-20-2014 |
| 20140032945 | Packet-Based Digital Display Interface Signal Mapping to Micro Serial Interface - A passive cable adaptor for connecting a data source device with a display device is described. The adaptor has a packet-based interface connector at one end, the connector having a positive main link pin, a negative main link pin, a positive auxiliary channel pin, and a negative auxiliary channel pin. At the other end is a micro serial interface connector, wherein multimedia content is transmitted over the cable adaptor and electrical power is supplied over the cable adaptor simultaneously. The cable adaptor has an auxiliary and hot plug detect (HPD) controller utilized to map the auxiliary channel and HPD signals of the packet-based digital display to the micro serial interface ID signal. | 01-30-2014 |
| 20140029597 | POWER EFFICIENT PS-POLL - A IEEE 802.11 Wireless Local Area Network (WLAN) system of an access point (AP) and one or more stations (STAB) reduces power consumption and increases battery life of power efficient low power STAB by decreasing the amount of time that a power efficient low power STA remains in an awake state. After indicating power efficient low power operation during association with an AP supporting such operation, the power efficient low power STA may enter the doze state from the time that the power efficient low power STA sends a PS-Poll until the power efficient low power STA receives the buffered DATA frame from the AP. While implementing the power efficient PS-Poll method, the AP can send the buffered DATA frame to the STA SIFS after the AP sends an ACK to the received PS-Poll from the STA. | 01-30-2014 |
| 20140029512 | SINGLE-SSID AND DUAL-SSID ENHANCEMENTS - A wireless local area network system establishes a PASSPOINT™ connection between a mobile station and a hotspot using an enhanced single SSID method or an enhanced dual SSID method. In the dual SSID method, an access point associates and authenticates a mobile device to a secondary SSID of the access point during enrollment and provisioning. After enrollment, the access point authenticates the mobile station to a primary SSID of the access point using the credential that the mobile station received from an online sign-up (“OSU”) server in connection with the secondary SSID. In the single SSID method, an access point performs two levels of authentication. During authentication, communications are limited to an 802.1x controlled port running on the mobile station and access point. After a first authentication, communications between the OSU server and the mobile station are unblocked. After the second authentication, all traffic from the mobile station is unblocked. | 01-30-2014 |
| 20140027933 | DEVICE AND METHOD FOR ALIGNMENT OF VERTICALLY STACKED WAFERS AND DIE - A device is provided that includes a first die having a first alignment structure that includes a plurality of first transmission columns arranged in a pattern and a second die positioned on the first die, the second die having a second alignment structure that includes a plurality of second transmission columns arranged in the same pattern as the first transmission columns. The first and second transmission columns are each coplanar with a first surface and a second surface of the first and second die, respectively. | 01-30-2014 |
| 20140024203 | SHALLOW HEAVILY DOPED SEMICONDUCTOR LAYER BY CYCLIC SELECTIVE EPITAXIAL DEPOSITION PROCESS - The deposition method comprises providing a substrate with a first mono-crystalline zone made of a semiconductor material and a second zone made of an insulating material. During a passivation step, a passivation atmosphere is applied on the substrate so as to cover the first zone with doping impurities. During a deposition step, gaseous silicon and/or germanium precursors are introduced and a doped semiconductor film is formed. The semiconductor film is mono-crystalline over the first zone and has a different texture over the second zone. During an etching step, a chloride gaseous precursor is applied on the substrate so as to remove the semiconductor layer over the second zone. | 01-23-2014 |
| 20130332498 | METHOD AND APPARATUS FOR EFFICIENT FREQUENCY-DOMAIN IMPLEMENTATION OF TIME-VARYING FILTERS - Embodiments are directed to efficient frequency-domain implementations of time-varying FIR filters. More specifically, time-varying FIR filters according to embodiments exploit the duality of the fast Fourier transform that windowing in the time domain equals convolution in the frequency domain. In one embodiment, convolution of the output of the FIR filter and a desired windowing function is performed in the frequency domain instead of taking the output of the FIR filter in the frequency domain, converting this output the time domain via an IFFT, and then windowing this output in the time domain before again converting back to the frequency domain. As long as the windowing function has certain characteristics, then the time-varying FIR filter is computationally efficient and introduces minimal audible artifacts into the output of the filter. Concepts described herein are discussed in terms of audio signals and systems but are not limited to audio signals and systems. | 12-12-2013 |
| 20130322636 | Diffusing Acoustical Crosstalk - When two loudspeakers play the same signal, a “phantom center” image is produced between the speakers. However, this image differs from one produced by a real center speaker. In particular, acoustical crosstalk produces a comb-filtering effect, with cancellations that may be in the frequency range needed for the intelligibility of speech. Methods for using phase decorrelation to fill in these gaps and produce a flatter magnitude response are described, reducing coloration and potentially enhancing dialogue clarity. These methods also improve headphone compatibility and reduce the tendency of the phantom image to move toward the nearest speaker. | 12-05-2013 |
| 20130318399 | VALIDATION OF A SYSTEM USING A DESIGN OF EXPERIMENTS PROCESSING TECHNIQUE - A validation system includes a test block that operates to apply a set of inputs to a system under test, such as a test system or an executable test algorithm, and receive from said system under test a first set of outputs produced by operation of the system under test in response to application of the set of inputs. The first set of outputs, as well as a second set of outputs reflecting output produced by operation of a reference system or executable reference algorithm in response to application of the same set of inputs, is processed to make a validation determination. A validation processing block compares the first and second sets of outputs to validate the system under test as an equivalent to the reference system. | 11-28-2013 |
| 20130312791 | DUAL MEDIUM FILTER FOR ION AND PARTICLE FILTERING DURING SEMICONDUCTOR PROCESSING - The present disclosure is directed to fluid filtering systems and methods for use during semiconductor processing. One or more embodiments are directed to fluid filtering systems and methods for filtering ions and particles from a fluid as the fluid is being provided to a semiconductor wafer processing tool, such as to a semiconductor wafer cleaning tool. | 11-28-2013 |
| 20130312051 | FAULT TOLERANT SYSTEM WITH EQUIVALENCE PROCESSING DRIVING FAULT DETECTION AND BACKUP ACTIVATION - A system includes a primary functionality and a backup functionality for the primary functionality. A measurement circuit measures operational parameter values of the primary functionality. A fault detection circuit determines a level of equivalence between the operation of the primary functionality and a reference functionality based on a weighted comparison of the measured operational parameter values of the primary functionality to corresponding reference operational parameter values for the reference functionality If the equivalence determination fails to find equivalence, the fault detection circuit signals a fault in the primary functionality and activates the backup functionality. | 11-21-2013 |
| 20130277842 | COPPER INTERCONNECT WITH CVD LINER AND METALLIC CAP - A structure having a diffusion barrier positioned adjacent to a sidewall and a bottom of an opening being etched in a layer of dielectric material. The structure also having a metal liner positioned directly on top of the diffusion barrier, a seed layer positioned directly on top of the metal liner, wherein the seed layer is made from a material comprising copper, a copper material positioned directly on top of the seed layer, a metallic cap positioned directly on top of and selective to the copper material, and a capping layer positioned directly on top of and adjacent to the metallic cap. | 10-24-2013 |
| 20130277747 | TRANSISTOR HAVING A STRESSED BODY - An embodiment of a transistor includes a body and a semiconductor region configured to stress a portion of the body. For example, stressing a channel of the transistor may increase the mobility of carriers in the channel, and thus may reduce the “on” resistance of the transistor. For example, the substrate, source/drain regions, or both the substrate and source/drain regions of a PFET may be doped to compressively stress the channel so as to increase the mobility of holes in the channel. Or, the substrate, source/drain regions, or both the substrate and source/drain regions of an NFET may be doped to tensile stress the channel so as to increase the mobility of electrons in the channel. | 10-24-2013 |
| 20130266136 | METHOD, SYSTEM, AND DEVICES FOR FAST SESSION TRANSFER OF WIRELESS DEVICES FROM ONE FREQUENCY BAND TO ANOTHER - Embodiments are directed to switching of stations STA, access points APs and PCPs that are communicating through a wireless link from one frequency band to another. One embodiment is directed to switching of stations STA that are communicating through a tunneled direct link setup (TDLS) link from one frequency band to another. A multiband element may be added to a TDLS discovery request and TDLS discovery response frames to allow each of the stations communications through a TDLS to determine if the other station has multiband capability. In one embodiment, a pairwise transient key (PTK) is created for both a current band in which the stations STA are communicating and a new band over which the stations may communicate in the future. In this way there is no need to calculate a new pairwise transient key PTK for the new frequency band. | 10-10-2013 |
| 20130262944 | SCAN CHAIN MODIFICATION FOR REDUCED LEAKAGE - A leakage power control vector is loaded into existing test scan chain elements for application to circuit elements of a circuit in which the leakage currents are to be controlled. The vector is designed to configure the circuit elements into states in which leakage currents are reduced. A multiplexer selects the power control vector for loading into the scan chain elements, and a clock generator clocks the configuration vector into the scan chain elements. A sleep mode detector may be provided to configure the multiplexer to select the power control vector and to operate the clock generator to clock the power control vector into the scan chain elements when a sleep mode of the circuit is detected. | 10-03-2013 |
| 20130244592 | RADIO FREQUENCY ARCHITECTURE FOR SPECTRUM ACCESS NETWORKS - Radio frequency (RF) architectures for spectrum access networks are provided. Embodiments of the invention generally provide a radio frequency (RF) architecture for customer premise equipment (CPE) for use in, for example, IEEE 802.22 wireless regional area networks (WRANs). In some embodiments, the CPE RF architecture includes two receive chains with a directional antenna and an omni-directional antenna, respectively. The CPE RF architecture facilitates opportunistic out-of-band spectrum sensing and WRAN signal receiving that are performed in parallel with data transmission. | 09-19-2013 |
| 20130241070 | OVERLAPPING CONTACTS FOR SEMICONDUCTOR DEVICE - A semiconductor device with overlapping contacts is provided. In one aspect, the semiconductor device includes a dielectric layer; a first contact located in the dielectric layer; and a second contact located in the dielectric layer adjacent to the first contact, wherein a portion of the second contact overlaps a top surface of the first contact. | 09-19-2013 |
| 20130228881 | HIGH ASPECT RATIO CAPACITIVELY COUPLED MEMS DEVICES - A method that includes forming an opening between at least one first electrode and a second electrode by forming a recess in a first electrode layer, the recess having sidewalls that correspond to a surface of the at least one first electrode, forming a first sacrificial layer on the sidewalls of the recess, the first sacrificial layer having a first width that corresponds to a second width of the opening, forming a second electrode layer in the recess that corresponds to the second electrode, and removing the first sacrificial layer to form the opening between the second electrode and the at least one first electrode. | 09-05-2013 |
| 20130227187 | Operation of Video Source and Sink With Hot Plug Detection Not Asserted - Methods and systems are described for displaying enabling the transmission, formatting, and display of multimedia data after a hot plug event during a start-up dead period. In particular, approaches for transmission, formatting, and display of multimedia data in the absence or non-operation of a hot plug detect system or signal, so that multimedia information can be displayed in a proper format even during the dead period when no hot plug detect signal is received. | 08-29-2013 |
| 20130219210 | Flat Panel Display Driver Method and System - Methods and systems are described for enabling display system data transmission during use. An integrated circuit package includes input interface circuitry configured to receive an audio-video data stream having a video signal and timing information and timing extraction circuitry that can identify blanking patterns for the video signal. The package includes input processing circuitry for receiving audio-video signal and converting the audio-video data stream input into a low voltage differential signal (LVDS). The package includes a timing controller having timing extraction circuitry, a set of symbol buffers, a scheduler, and timing control circuitry. All configured to implement LVDS data transfer and in some implementation enable point to point data transfer from data buffers to associated column drivers. | 08-22-2013 |
| 20130218316 | ENDPOINT DETECTOR FOR A SEMICONDUCTOR PROCESSING STATION AND ASSOCIATED METHODS - A semiconductor processing apparatus includes a semiconductor processing station for a semiconductor wafer, and an endpoint detector associated with the semiconductor processing station. The endpoint detector includes a non-contact probe configured to probe the semiconductor wafer, an optical transmitter configured to transmit an optical signal to the non-contact probe, and an optical receiver configured to receive a reflected optical signal from the non-contact probe. The controller controls the semiconductor processing station based on the reflected optical signal. | 08-22-2013 |
| 20130215873 | MULTI-CHANNEL INTER BASE-STATION COMMUNICATION - The invention relates to systems and methods for spectrum sharing and communication among several wireless communication networks with overlapping service areas (or cells), especially to Wireless Regional Area Networks (WRANs). Particular embodiments of the invention disclose using a conference channel to communicate between base stations. Other embodiments use slotted coexistence windows within frames to transmit and receive information, including for reserving transmission times within subsequent frames. | 08-22-2013 |
| 20130214756 | WIDE INPUT VOLTAGE RANGE POWER FACTOR CORRECTION CIRCUIT - A boost circuit is used for power factor correction (PFC). In a low power application, transition mode control is utilized. However, switching frequency varies with different input voltages, and over a wide input voltage range, the switching frequency can become too high to be practical. To address this issue, a boost circuit is provided whose effective inductance changes as a function of input voltage. By changing the inductance, control is exercised over switching frequency. | 08-22-2013 |
| 20130204202 | WIRELESS STRAIN GAUGE/FLOW SENSOR - A flow rate sensor is provided in a wireless, leadless package. The flow rate sensor includes a MEMs sensor coupled to an ASIC and an antenna. The flow rate sensor is powered by radiation received from a control module adjacent the flow rate sensor. The flow rate sensor is placed within a fluid and monitors the flow rate of the fluid. The control module is not in the fluid and receives flow rate data from the flow rate sensor. | 08-08-2013 |
| 20130201347 | PRESENCE DETECTION DEVICE - A user presence detection device includes a camera module with a silicon-based image sensor adapted to capture an image and a processing device configured to process the image to detect the presence of a user. The camera module further includes a light filter having a lower cut-off wavelength of between 550 nm and 700 nm and a higher cut-off wavelength of between 900 nm and 1100 nm. | 08-08-2013 |
| 20130199580 | DRYING APPARATUS WITH EXHAUST CONTROL CAP FOR SEMICONDUCTOR WAFERS AND ASSOCIATED METHODS - A drying apparatus for drying a semiconductor wafer includes a processing chamber including a rinsing section and a drying section adjacent thereto. The rinsing section has a chamber loading slot associated therewith for receiving the semiconductor wafer. The drying section has a chamber unloading slot associated therewith for outputting the semiconductor wafer. An exhaust control cap is carried by the processing chamber and includes a bottom wall, a top wall, at least one intermediate wall between the bottom and top walls, and a side wall coupled to the top, bottom and the at least one intermediate wall to define stacked exhaust sections. The exhaust control cap has a cap loading slot aligned with the chamber loading slot, a cap unloading slot aligned with the chamber unloading slot, and at least one exhaust port configured to be coupled to a vacuum source. | 08-08-2013 |
| 20130199563 | ADJUSTABLE BRUSH CLEANING APPARATUS FOR SEMICONDUCTOR WAFERS AND ASSOCIATED METHODS - A cleaning apparatus for cleaning a semiconductor wafer includes a rotary brush to be positioned to clean the semiconductor wafer, and an optical sensing device associated with the rotary brush to sense a separation distance between a reference position thereon and the semiconductor wafer. An actuator is coupled to the optical sensing device to position the rotary brush based upon the sensed separation distance. | 08-08-2013 |
| 20130194920 | VHT TDLS - TDLS support in VHT devices is enabled through the use of added VHT fields in the TDLS frames. A VHT TDLS direct link can be setup through a respective TDLS Setup Request/Response with added field announcing VHT Capabilities of the VHT device and the peer device. Added VHT Operation field in the TDLS Setup Confirm frame adds supports between VHT peer devices for non-VHT BSS and VHT BSS. Two VHT STAs can establish wider TDLS channel than BSS operating channel through TDLS establishment. VHT off channel support is enabled by adding Wide Bandwidth Channel Switch field in the TDLS Channel Switch Request frame and no changes to TDLS Channel Switch Response. A VHT Capabilities field is also added to TDLS Discovery Response frame to inform peer devices of device capabilities. | 08-01-2013 |
| 20130193514 | METHOD TO ENABLE THE FORMATION OF SILICON GERMANIUM CHANNEL OF FDSOI DEVICES FOR PFET THRESHOLD VOLTAGE ENGINEERING - An SOI substrate has a first region isolated from a second region. An SiGe layer is deposited on top of the SOI substrate in the second region. The substrate is subjected to a thermal oxidation process which drives in Ge from the SiGe layer to form an SiGeOI structure in the second region and an overlying oxide layer. If the SOI substrate is exposed in the first region, the thermal oxidation process further produces an oxide layer overlying the first region. The oxide layer(s) is(are) removed to expose an Si channel layer in the first region and an SiGe channel layer in the second region. Transistor gate stacks are formed over each of the Si channel layer and SiGe channel layer. Raised source and drain regions are formed from the Si channel layer and SiGe channel layer adjacent the transistor gate stacks. | 08-01-2013 |
| 20130193494 | TRANSISTOR WITH COUNTER-ELECTRODE CONNECTION AMALGAMATED WITH THE SOURCE/DRAIN CONTACT - The field effect device includes an active area made from semi-conducting material and a gate electrode separated from the active area by a dielectric gate material. A counter-electrode is separated from the active area by a layer of electrically insulating material. Two source/drain contacts are arranged on the active area on each side of the gate electrode. One of the source/drain contacts is made from a single material, overspills from the active area and connects the active area with the counter-electrode. The counter-electrode contact is delineated by a closed peripheral insulating pattern. | 08-01-2013 |
| 20130188522 | HIGH THROUGHPUT FEATURES IN 11S MESH NETWORKS - The addition of high throughput capability elements to beacon frames and peer link action frames in wireless mesh networks enable the utilization of desirable features without further modifications to the network. Rules can be established for high throughput mesh point protection in a mesh network, Space-time Block Code (STBC) operations and 20/40 MHz operation selections. However, features such as PSMP (power save multi-poll) and PCO (phased coexistence operations) are barred from implementation to prevent collisions. | 07-25-2013 |
| 20130186446 | THERMOELECTRIC DEVICE - A thermoelectric device includes a plurality of thin-film thermoelectric elements. Each thin-film thermoelectric element is a Seebeck-Peltier device. The thin-film thermoelectric elements are electrically coupled in parallel with each other. The thermoelectric device may be fabricated using conventional semiconductor processing technologies and may be a thin-film type device. | 07-25-2013 |
| 20130182523 | ROBUST SRAM MEMORY CELL CAPACITOR PLATE VOLTAGE GENERATOR - An SRAM having two capacitors connected in series between respective bit storage nodes of each memory cell. The two inverters of the memory cell are powered by a positive voltage and a low voltage. The two capacitors are connected to each other at a common node. A leakage current generator is coupled to the common node. The leakage current generator supplies to the common node a leakage current to maintain a voltage which is approximately halfway between the voltages of the high and low SRAM supplies. | 07-18-2013 |
| 20130176921 | VHT TXOP POWER SAVE - A wireless, specifically VHT, system that includes APs and STAs can power save during the TXOP. The AP in the system announces whether STAs in the system do SU or MU TXOP power save in a Beacon/Probe Response, and the STAs in the system transmit to the AP whether the STA is capable and willing to save power during a SU, MU, or SU+MU TXOP. For the AP, the process further involves buffering data frames for STAs that have entered doze mode until the end of TXOP. The AP further transmits to STAs a duration of TXOP in the Duration field of a RTS frame. The STA can inform the AP to enter TXOP PM mode in a bit in the HT Control field. | 07-11-2013 |
| 20130176057 | PROGRAMMABLE PULSE WIDTH DISCRIMINATOR - Disclosed is a programmable pulse width discriminator circuit operable to receive a set of parameters from a user and indicate when an input signal satisfies conditions set by the user-defined parameters. The input signal is sampled by the pulse width discriminator circuit to detect a desired state of the input signal. The user may set the parameters such that the pulse width discriminator indicates the condition wherein the number of consecutive samples for which the input signal is the desired state is (i) greater than a first threshold value, (ii) less than a second threshold value, or (iii) between the first and second threshold values. In these embodiments, the user sets the first and second threshold values and selects which set of conditions are indicated by the output of the circuit. | 07-11-2013 |
| 20130168743 | STRAINED TRANSISTOR STRUCTURE - A strain enhanced transistor is provided having a strain inducing layer overlying a gate electrode. The gate electrode has sloped sidewalls over the channel region of the transistor. | 07-04-2013 |
| 20130155953 | CHANNEL BANDWIDTH INDICATION AND TXOP PROTECTION - Methods and systems are disclosed for the operation of wireless communication networks, in which communication channels can have possibly overlapping bandwidths of different sizes, including sensor networks operating by the IEEE 802.11ah standard. A first method of signaling to negotiate the channel bandwidth conveys the needed information in the SIG field of the PPDUs of duplicate RTS/CTS frames, and uses the SIG field of PPDUs of duplicated data, control and management frames to perform transmit opportunity protection. A second method of signaling to negotiate the channel bandwidth conveys the needed information in the scrambling sequence field of PPDUs of duplicate RTS, and uses the scrambling sequence field of PPDUs of duplicated data, control and management frames to perform transmit opportunity protection. | 06-20-2013 |
| 20130155952 | SUB-1GHZ MAC FRAME HEADER COMPRESSION - Methods and systems are disclosed specifying the arrangement and content of the fields in data and management frames, which allow for greater payload efficiency in frame-based communication networks. The content of the fields is changed from the standard 802.11 arrangement to meet of the needs of networks such as Sub-1GHz networks, including those of the 802.11 ah standard, and sensor networks with a large number of stations transmitting at low data rates. In some embodiments, MAC header fields are reduced from standard 802.11 header fields by using only two fields for addressing and eliminating standard fields that are not used in sensor networks. | 06-20-2013 |
| 20130155930 | SUB-1GHZ GROUP POWER SAVE - Methods and systems are disclosed for reduced power consumption in communication networks, including sensor networks implemented according to IEEE 802.11ah, by organizing stations into groups having long sleep periods. By organizing the stations of the network into groups, the access point can match each group's traffic identification map with its target beacon transmit time. One embodiment organizes the stations sequentially by AID numbers. Other embodiments organize the stations by similar power save requirements and/or nearby geographical location. Forms of an Extended Traffic Identification Map are matched with an awaken Target Beacon Transmit Time of the group. | 06-20-2013 |
| 20130150790 | PIEZOELECTRIC MICROFLUIDIC PUMPING DEVICE AND METHOD FOR MAKING THE SAME - Disclosed herein is a microfluidic pumping device having a piezoelectric member positioned above a displaceable membrane. A voltage is applied across the piezoelectric member causing the piezoelectric member to displace the membrane. Displacement of the membrane increases and decreases pressure in a cavity that is below the membrane. The increases and decreases in pressure actuate cantilevered check valve members to facilitate unidirectional liquid flow through the pumping device. | 06-13-2013 |
