SK HYNIX INC. Patent applications |
Patent application number | Title | Published |
20160141014 | SEMICONDUCTOR INTEGRATED CIRCUIT - A semiconductor integrated circuit including first semiconductor chip and second semiconductor chip that are vertically stacked, wherein the first semiconductor chip includes a first column data driving circuit configured to transmit internal data to the second semiconductor chip in a DDR (double data rate) scheme based on an internal strobe signal, and a first column strobe signal driving circuit configured to generate first column strobe signals that are source-synchronized with first column data transmitted to the second semiconductor chip by the first column data driving circuit, based on the internal strobe signal, and transmit the first column strobe signals to the second semiconductor chip. | 05-19-2016 |
20160133607 | SEMICONDUCTOR SYSTEM - A semiconductor system may include first semiconductor device including a first pad, a second pad and a first test input pad, and suitable for storing data inputted in series through the first test input pad and outputting the stored data in parallel through the first pad and the second pad; a second semiconductor device including a third pad, a fourth pad and a second test output pad, and suitable for storing data inputted in parallel through the third pad and the fourth pad, a first through via connecting the first pad and the third pad so that the stored data outputted in parallel through the first pad is inputted in parallel through the third pad; and a second through via connecting the second pad and the fourth pad so that the stored data outputted in parallel through the second pad is inputted in parallel through the fourth pad. | 05-12-2016 |
20160133511 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes an interlayer insulating layer having openings, contact plugs formed in lower parts of the openings, wherein the contact plugs include a first conductive layer, and bit lines formed in upper parts of the openings and coupled to the contact plugs, wherein the bit lines include a second conductive layer. | 05-12-2016 |
20160133313 | SEMICONDUCTOR MEMORY AND METHOD FOR OPERATING THE SAME - A semiconductor memory may include: a storage unit suitable for storing a minimum operation interval between row command operations, a detection unit suitable for detecting whether row command signals inputted for the row command operations are activated at the minimum operation interval, a latching unit suitable for generating flag signals by latching the row command signals, and a shifting unit suitable for shifting the flag signals based on the minimum operation interval in response to an output signal of the detection unit, and generating an internal row command signals. | 05-12-2016 |
20160118474 | SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - A semiconductor device includes a semiconductor substrate including a trench, a gate insulation film located over a bottom and sidewall of the trench, a first gate formed over the gate insulation film and in a lower portion of the trench, a second gate formed over the first gate and in an upper portion of the trench, a multi-layered structure provided between the gate insulation film and the second gate. | 04-28-2016 |
20160118403 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a channel layer including a sidewall having protrusions and depressions alternating with each other in a direction in which the channel layer extends, a tunnel insulating layer surrounding the channel layer, first charge storage patterns surrounding the tunnel insulating layer formed in the depressions, blocking insulation patterns surrounding the first charge patterns formed in the depressions, wherein the blocking insulating patterns include connecting portions coupled to the tunnel insulating layer, and second charge storage patterns surrounding the tunnel insulating layer formed in the protrusions. | 04-28-2016 |
20160111535 | SEMICONDUCTOR DEVICE WITH ONE-SIDE-CONTACT AND METHOD FOR FABRICATING THE SAME - A method for fabricating a semiconductor device includes forming a first conductive layer doped with an impurity for forming a cell junction over a semiconductor substrate, forming a second layer over the first conductive layer, forming a plurality of active regions by etching the second layer and the first conductive layer, the plurality of the active regions being separated from one another by trenches, forming a side contact connected to a sidewall of the first conductive layer, and forming a plurality of metal bit lines each connected to the side contact and filling a portion of each trench. | 04-21-2016 |
20160111291 | SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - The present disclosure relates to a semiconductor memory, device and a method of forming a semiconductor memory device. The method of manufacturing a semiconductor memory device, includes forming a tunnel insulation layer and a floating gate on a semiconductor substrate of an active region, forming a trench in the semiconductor substrate of an isolation region, forming, in the trench, a sacrificial layer having an upper surface positioned higher than a surface of the semiconductor substrate, forming a capping layer over the sacrificial layer, and forming an air gap by removing the sacrificial layer without removing the capping layer. | 04-21-2016 |
20160111172 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a plurality of repair fuse circuits configured to each program a repair target address; and an enable signal generation circuit configured to generate at least one enable signal in response to a source signal and provide the enable signal to each of the repair fuse circuits in common. Since the semiconductor device may iteratively generate a rupture enable signal through a feedback scheme, the area occupied by a circuit, such as a shift register or a D flip-flop may be saved. | 04-21-2016 |
20160104764 | METHOD FOR FABRICATING CAPACITOR OF SEMICONDUCTOR DEVICE - A method for fabricating a capacitor of a semiconductor device includes forming a mold layer over a substrate, forming a plurality of preliminary openings by selectively etching the mold layer, forming a plurality of openings where each opening is formed to have a given linewidth by forming a sacrificial layer on sidewalls of the preliminary openings, and forming a plurality of storage nodes in the plurality of openings. | 04-14-2016 |
20160099152 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A method for fabricating a semiconductor device includes: implanting a first species into a substrate at a cold temperature to form a first region; and implanting a second species into the substrate at a hot temperature to form a second region that is adjacent to the first region. | 04-07-2016 |
20160099055 | EPROM CELL ARRAY, METHOD OF OPERATING THE SAME, AND MEMORY DEVICE INCLUDING THE SAME - A memory cell array includes local blocks disposed in parallel with rows and arrayed along a direction parallel with columns, first selection lines being parallel with the rows and including a couple of first selection lines connected to each of the local blocks, second selection lines disposed in parallel with the columns, and local block selectors disposed between the plurality of local blocks. Each of the local block selectors is disposed between a Q | 04-07-2016 |
20160093717 | DUAL WORK FUNCTION BURIED GATE TYPE TRANSISTOR AND METHOD FOR FABRICATING THE SAME - A transistor includes a substrate having an active region defined by an isolation layer; a first trench defined in the active region and a second trench defined in the isolation layer; a fin region formed under the first trench; and a buried gate electrode covering sidewalls of the fin region and filling the first and second trenches. The buried gate electrode includes a first work function layer formed on the sidewalls of the fin region; a second work function layer formed on sidewalls of the first trench and the second trench; a third work function layer positioned over the fin region and contacting the second work function layer; and a low resistance layer contacting the third work function layer and partially filling the first and second trenches. | 03-31-2016 |
20160093527 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE INCLUDING SILICON-CONTAINING LAYER AND METAL-CONTAINING LAYER, AND CONDUCTIVE STRUCTURE OF THE SAME - A method for fabricating a semiconductor device includes forming a silicon-containing layer; forming a metal-containing layer over the silicon-containing layer; forming an undercut prevention layer between the silicon containing layer and the metal containing layer; etching the metal-containing layer; and forming a conductive structure by etching the undercut prevention layer and the silicon-containing layer. | 03-31-2016 |
20160087006 | 3-DIMENSIONAL STACK MEMORY DEVICE - A 3-dimensional stack memory device includes a semiconductor substrate, a stacked active pattern configured so that a plurality of stripe shape active regions and insulation layers are stacked alternatively over the semiconductor substrate, a gate electrode formed in the stacked active pattern, a source and drain formed at both sides of the gate electrode in each of the plurality of active regions, a bit line formed on one side of the drain to be connected to the drain, a resistive device layer formed on one side of the source to be connected to the source, and a source line connected to the resistive device layer. The source is configured of an impurity region having a first conductivity type, and the drain is configured of an impurity region having a second conductivity type different from the first conductivity type. | 03-24-2016 |
20160086957 | SEMICONDUCTOR DEVICE WITH BURIED BIT LINE AND METHOD FOR FABRICATING THE SAME - A method for fabricating a semiconductor device includes etching semiconductor substrate to form bulb-type trenches that define a plurality of active regions in the semiconductor substrate; forming a supporter in each of the bulb-type trenches; dividing each active region, of the plurality of active regions, into a pair of body lines by forming a trench through each active region; and forming a bit line in each body line of the pair of body lines. | 03-24-2016 |
20160086663 | SEMICONDUCTOR SYSTEM INCLUDING SEMICONDUCTOR MEMORY APPARATUS AND TEMPERATURE CONTROL METHOD THEREOF - A semiconductor memory apparatus and a temperature control method thereof are provided. The semiconductor memory apparatus includes a temperature adjustment unit suitable for adjusting a temperature of a memory cell, and a temperature control unit suitable for sensing a temperature of the temperature adjustment unit, comparing a sensed temperature with a reference temperature range, and controlling the temperature adjustment unit to adjust the temperature thereof within the reference temperature range based on a comparison result. | 03-24-2016 |
20160086653 | SEMICONDUCTOR DEVICE HAVING TRANSISTOR AND SEMICONDUCTOR MEMORY DEVICE USING THE SAME - Semiconductor device capable of preventing off-leakage of the transistor may include a pulse voltage generator configured to generate a pulse voltage, and a transistor configured to have a gate provided with the pulse voltage. The transistor is in an off state in response to the pulse voltage. | 03-24-2016 |
20160079398 | SEMICONDUCTOR DEVICE HAVING FIN GATE, RESISTIVE MEMORY DEVICE INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME - A semiconductor device having a fin gate that improves an operation current, and a method of manufacturing the same. The semiconductor device includes an active pillar formed on a semiconductor substrate, the active pillar including an inner region and an outer region surrounding the inner region, and a fin gate overlapping an upper surface and a lateral surface of the active pillar. The inner portion of the active pillar includes a first semiconductor layer having a first lattice constant, and the outer region of the active pillar includes a second semiconductor layer having a second lattice constant smaller than the first lattice constant. | 03-17-2016 |
20160079390 | SEMICONDUCTOR INTEGRATED CIRCUIT APPARATUS AND METHOD OF MANUFACTURING THE SAME - A semiconductor integrated circuit apparatus and a method of manufacturing the same are provided. The semiconductor integrated circuit apparatus includes a semiconductor substrate having an active island, a gate buried in a predetermined portion of the active island, a source and a drain formed at both sides of the gate, and a current blocking layer formed in the active island corresponding to a lower portion of the drain. When current flows in from the drain, the current blocking layer is configured to discharge the current into the inside of the semiconductor substrate through a lower portion of the source. | 03-17-2016 |
20160079275 | THREE-DIMENSIONAL (3D) SEMICONDUCTOR DEVICE - A semiconductor device includes interlayer dielectrics stacked and spaced apart from each other, a channel layer passing through the interlayer dielectrics, line pattern regions each surrounding a sidewall of the channel layer to be disposed between the interlayer dielectrics, a barrier pattern formed along a surface of each of the line pattern regions and the sidewall of the channel layer, a reaction preventing pattern formed on the barrier pattern along a surface of a first region of each of the line pattern regions, the first region being adjacent to the channel layer, a protection pattern filled in the first region on the reaction preventing pattern, and a first metal layer filled in a second region of each of the line pattern regions. | 03-17-2016 |
20160078962 | ANTI-FUSE TYPE ONE-TIME PROGRAMMABLE MEMORY CELL AND ANTI-FUSE TYPE ONE-TIME PROGRAMMABLE MEMORY CELL ARRAYS - An anti-fuse type OTP memory cell includes a first anti-fuse transistor having a first channel width, a first selection transistor sharing a first active region with the first anti-fuse transistor and having a second channel width that is greater than the first channel width, a second anti-fuse transistor sharing a program gate with the first anti-fuse transistor and having a third channel width, and a second selection transistor sharing a second active region with the second anti-fuse transistor and having a fourth channel width that is greater than the third channel width. | 03-17-2016 |
20160071955 | SEMICONDUCTOR INTEGRATED CIRCUIT APPARATUS AND METHOD OF MANUFACTURING THE SAME - A semiconductor integrated circuit apparatus and a method of manufacturing the same are provided. The semiconductor integrated circuit apparatus includes a semiconductor substrate having an active island, a gate buried in a predetermined portion of the active island, a source and a drain formed at both sides of the gate, and a current blocking layer formed in the active island corresponding to a lower portion of the drain. When current flows in from the drain, the current blocking layer is configured to discharge the current into the inside of the semiconductor substrate through a lower portion of the source. | 03-10-2016 |
20160071564 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes a first signal generation unit configured to sequentially generate first and second delay signals in response to a first column control signal, the first and second delay signals having reflected a delay time and a multiplied delay time selected from a plurality of delay times in correspondence with an arrangement location of a unit memory region, through data is input/output, respectively, and a second signal generation unit configured to generate a second column control signal delayed by the selected delay time as compared with the first column control signal, to determine an activation time point of the second column control signal in response to the first delay signal, and to determine a deactivation time point of the second column control signal in response to the second delay signal. | 03-10-2016 |
20160064454 | 3D VARIABLE RESISTANCE MEMORY DEVICE HAVING JUNCTION FET AND DRIVING METHOD THEREOF - A 3D variable resistance memory device having a junction FET and a driving method thereof are provided. The variable resistance memory device includes a semiconductor substrate and a string selection switch formed on the semiconductor substrate. A channel layer is formed on the column string selection switch. A plurality of gates stacked along a length of the channel layer and each of the gates contacts an outer side of the channel layer. A variable resistance layer is formed on an inner side of the channel layer, and contacts the channel layer. | 03-03-2016 |
20160064072 | 3D VARIABLE RESISTANCE MEMORY DEVICE HAVING JUNCTION FET AND DRIVING METHOD THEREOF - A 3D variable resistance memory device having a junction FET and a driving method thereof are provided. The variable resistance memory device includes a semiconductor substrate and a string selection switch formed on the semiconductor substrate. A channel layer is formed on the column string selection switch. A plurality of gates stacked along a length of the channel layer and each of the gates contacts an outer side of the channel layer. A variable resistance layer is formed on an inner side of the channel layer, and contacts the channel layer. | 03-03-2016 |
20160056209 | THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND A SYSTEM HAVING THE SAME - A 3D semiconductor device and a system having the same are provided. The 3D semiconductor device includes a semiconductor substrate, a common source region formed on the semiconductor substrate and extending in a line shape, an active region formed on the common source region and including a lateral channel region, which is substantially in parallel to a surface of the semiconductor substrate, and source and drain regions that are branched from the lateral channel region to a direction substantially perpendicular to the surface of the semiconductor substrate, and a gate formed in a space between the source region and the drain region. | 02-25-2016 |
20160049446 | TRANSISTOR, RESISTANCE VARIABLE MEMORY DEVICE INCLUDING THE SAME, AND MANUFACTURING METHOD THEREOF - A resistance variable memory device including a vertical transistor includes an active pillar including a channel region, a source formed in one end of the channel region, and a lightly doped drain (LDD) region and a drain formed in the other end of the channel region, a first gate electrode formed to surround a periphery of the LDD region and having a first work function, and a second gate electrode formed to be connected to the first gate electrode and to surround the channel region and having a second work function that is higher than the first work function. | 02-18-2016 |
20160049409 | SEMICONDUCTOR DEVICE WITH AIR GAP AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a plurality of first conductive structures formed over a substrate, second conductive structures each formed between neighboring first conductive structures of the first conductive structures, air gaps each formed between the second conductive structures and the neighboring first conductive structures thereof, third conductive structures each capping a portion of the air gaps, and capping structures each capping the other portion of the air gaps. | 02-18-2016 |
20160047854 | SEMICONDUCTOR DEVICE WITH TEST MODE CIRCUIT - A semiconductor device includes a plurality of test entry selection units configured to selectively activate a plurality of test entry signals in response to a test entry code, and a plurality of test operation blocks, corresponding to the respective test entry signals, each configured to be reset in response to activation of the corresponding test entry signal to perform a set test operation corresponding to a test selection code. | 02-18-2016 |
20160043138 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a memory block including a transistor region and a memory region. A variable resistance layer of the memory region acts as a gate insulating layer in the transistor region. | 02-11-2016 |
20160035410 | MEMORY AND MEMORY SYSTEM INCLUDING THE SAME - A memory includes a first cell array including a plurality of first memory cells connected to a plurality of word lines, a bit line selection unit configured to select one or more bit lines among a plurality of bit lines based on repair information, a second cell array including a plurality of second memory cells connected to the plurality of word lines and the plurality of bit lines, wherein a group of the plurality of second memory cells connected to a corresponding word line stores the number of activations of the corresponding word line when the one or more connected bit lines are selected and an activation number update unit configured to update a value stored in the second memory cells, which are connected to the one or more selected bit lines and the activated word line among the plurality of word lines. | 02-04-2016 |
20160028010 | 3D VARIABLE RESISTANCE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A variable resistance memory device includes a plurality of cell gate electrodes extending in a first direction, wherein the plurality of cell gate electrodes are stacked in a second direction that is substantially perpendicular to the first direction. A gate insulating layer surrounds each cell gate electrode of the plurality of cell gate electrodes and a cell drain region is formed on two sides of the each cell gate electrode of the plurality of cell gate electrodes A channel layer extends in the second direction along the stack of the plurality of cell gate electrodes, and a variable resistance layer contacting the channel layer. | 01-28-2016 |
20160028006 | 3D VARIABLE RESISTANCE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A variable resistance memory device includes a plurality of cell gate electrodes extending in a first direction, wherein the plurality of cell gate electrodes are stacked in a second direction that is substantially perpendicular to the first direction, A gate insulating layer surrounds each cell gate electrode of the plurality of cell gate electrodes and a cell drain region is formed on two sides of the each cell gate electrode of the plurality of cell gate electrodes A channel layer extends in the second direction along the stack of the plurality of cell gate electrodes, and a variable resistance layer contacting the channel layer. | 01-28-2016 |
20160027505 | 3D VARIABLE RESISTANCE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A variable resistance memory device includes a plurality of cell gate electrodes extending in a first direction, wherein the plurality of cell gate electrodes are stacked in a second direction that is substantially perpendicular to the first direction, A gate insulating layer surrounds each cell gate electrode of the plurality of cell gate electrodes and a cell drain region is formed on two sides of the each cell gate electrode of the plurality of cell gate electrodes A channel layer extends in the second direction along the stack of the plurality of cell gate electrodes, and a variable resistance layer contacting the channel layer. | 01-28-2016 |
20160005859 | THREE DIMENSIONAL SEMICONDUCTOR INTEGRATED CIRCUIT HAVING GATE PICK-UP LINE AND METHOD OF MANUFACTURING THE SAME - A 3D semiconductor integrated circuit having a gate pick-up line and a method of manufacturing the same, wherein the semiconductor integrated circuit includes a plurality of active pillars formed in a gate pick-up region, buffer layers formed on the respective active pillars in the gate pick-up region, gates each surrounding an outer circumference of the corresponding active pillar and the corresponding buffer layer, and a gate pick-up line electrically coupled to the gates. | 01-07-2016 |
20160005794 | THREE DIMENSIONAL SEMICONDUCTOR INTEGRATED CIRCUIT HAVING GATE PICK-UP LINE AND METHOD OF MANUFACTURING THE SAME - A 3D semiconductor integrated circuit having a gate pick-up line and a method of manufacturing the same, wherein the semiconductor integrated circuit includes a plurality of active pillars formed in a gate pick-up region, buffer layers formed on the respective active pillars in the gate pick-up region, gates each surrounding an outer circumference of the corresponding active pillar and the corresponding buffer layer, and a gate pick-up line electrically coupled to the gates. | 01-07-2016 |
20160005754 | NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A nonvolatile memory device having a plurality of unit cells, each of the plurality of unit cells includes a first transistor suitable for having a fixed threshold voltage, and a second transistor suitable for coupling to the first transistor in parallel and having a variable threshold voltage. | 01-07-2016 |
20160005745 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a substrate having a cell region, wherein a contact region, page buffer regions, and a scribe lane region are defined around the cell region; a cell structure located in the cell region, including first conductive layers and first insulating layers which are alternately stacked, and having a non-stepped shape; a contact structure located in the contact region, including second conductive layers and second insulating layers which are alternately stacked, and having a stepped shape; a first dummy structure located in the page buffer region, including first sacrificial layers and third insulating layers which are alternately stacked, and having the non-stepped shape; and a second dummy structure located in the scribe lane region, including second sacrificial layers and fourth insulating layers which are alternately stacked, and having the stepped shape. | 01-07-2016 |
20160005743 | SEMICONDUCTOR DEVICE WITH AIR GAP AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a first conductive structure including a first conductive pattern that is formed over a substrate, a second conductive structure formed adjacent to a sidewall of the first conductive structure, and an insulation structure including an air gap that is formed between the first conductive structure and the second conductive structure, wherein the second conductive structure includes a second conductive pattern, an ohmic contact layer that is to formed over the second conductive pattern, and a third conductive pattern that is formed over the ohmic contact layer and is separated from the first conductive pattern through the air gap. | 01-07-2016 |
20160005443 | MEMORY AND MEMORY SYSTEM - A memory may include first to N | 01-07-2016 |
20150380426 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device that includes a plurality of first conductive patterns stacked over a substrate, dummy patterns formed in the first conductive patterns, respectively, first barrier patterns each surrounding the respective first conductive patterns and partially interposed between the respective first conductive patterns and the respective dummy patterns, second barrier patterns each surrounding the respective first barrier patterns and the respective dummy patterns, a second conductive pattern located over or under the first conductive patterns, and a third barrier pattern surrounding the second conductive pattern, wherein the second conductive pattern has a greater thickness than the first conductive patterns. | 12-31-2015 |
20150380089 | THREE DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE WITH LINE SHARING SCHEME - A semiconductor memory device includes a memory array including memory blocks stacked in a plurality of layers over a substrate and an operation circuit suitable for performing a read operation and a program loop to memory cells included in the memory blocks, wherein word lines of the memory blocks are coupled to each other and a pair of the memory blocks are arranged vertically adjacent to each other and share bit lines. | 12-31-2015 |
20150372117 | SEMICONDUCTOR DEVICE - A semiconductor device includes a plurality of epitaxial layers stacked over a supportive substrate, a first buried impurity region formed to share the supportive substrate with a lowermost epitaxial layer among the multiple epitaxial layers, one or more second buried impurity regions formed to be coupled with the first buried impurity region and share an N | 12-24-2015 |
20150372058 | METHOD FOR FABRICATING SEMICONDUCTOR APPARATUS - A method for fabricating a semiconductor apparatus includes forming a diffusion barrier film on a semiconductor substrate, forming a first film on a semiconductor substrate including a common source region, forming a second film on the first film, forming a conductive film on the second film, patterning the conductive film and the second film, to form an active pattern, and patterning the first film and the semiconductor substrate using the active pattern as a mask, to form a pillar; and forming a gate electrode on an outer circumference of the pillar. | 12-24-2015 |
20150372057 | THREE DIMENSIONAL SEMICONDUCTOR DEVICE HAVING LATERAL CHANNEL - A 3D semiconductor device and a method of manufacturing the same are provided. The 3D semiconductor device includes a semiconductor substrate, an active line formed on the insulating layer, including a source region, a drain region and a channel region positioned between the source region and the drain region, a gate electrode located on a portion of the active line, corresponding to a region between the source region and the drain region, and extending to a direction substantially perpendicular to the active line, and a line-shaped common source node formed to be electrically coupled to the source region and extending substantially in parallel to the gate electrode in a space between gate electrodes. The source region and the drain region of the active line are formed of a first material and the channel region of the active line is formed of a second material being different from the first material. | 12-24-2015 |
20150372050 | IMAGE SENSOR HAVING LENS TYPE COLOR FILTER AND METHOD FOR FABRICATING THE SAME - The image sensor includes lens-type color filters having a uniform shape for a plurality of pixels. The image sensor includes a plurality of pixels formed in a substrate, a plurality of color filter housings formed over outer boundaries of the respective pixels, and a plurality of color filters filled in spaces defined by the respective color filter housings, wherein the clock filter housings surround edges of the respective color filters with a given curvature. | 12-24-2015 |
20150371944 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a plurality of transistors formed over a substrate, a support body including a horizontal portion and protrusions, wherein the horizontal portion covers at least one of the transistors, and the protrusions are formed over the horizontal portion and located between the transistors, and conductive layers and insulating layers alternately stacked over the support body and protruding upwardly along the sidewalls of the protrusions. | 12-24-2015 |
20150371891 | SEMICONDUCTOR DEVICE WITH AIR GAP AND METHOD FOR FABRICATING THE SAME - A method for fabricating a semiconductor device includes forming an insulation layer over a substrate; forming an open portion in the insulation layer; forming a sacrificial spacer over sidewalls of the open portion; forming, over the sacrificial spacer, a first conductive pattern in a lower section of the open portion; forming an ohmic contact layer over the first conductive pattern; forming an air gap by removing the sacrificial spacer; capping the air gap by forming a barrier layer over the ohmic contact layer; and forming a second conductive pattern over the barrier layer to fill an upper section of the open portion. | 12-24-2015 |
20150357051 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes: a memory cell array region having a plurality of normal cell lines and a plurality of repair cell lines; a plurality of normal cell line selection units suitable for selecting the plurality of normal cell lines, respectively, in response to a local address; a plurality of repair cell line selection units suitable for selecting the plurality of repair cell lines, respectively, in place of normal cell line selection units corresponding to fail information of the local address; a fuse driving unit comprising a fuse array in which the fail information is programmed, suitable for disabling the normal cell line selection units corresponding to the fail information, and enabling normal cell line selection units unrelated to the fail information; and an address determination unit suitable for controlling the plurality of repair cell line selection units based on the fail information. | 12-10-2015 |
20150357037 | HIGH VOLTAGE GENERATING CIRCUIT FOR RESISTIVE MEMORY APPARATUS - A high voltage generating circuit for a resistive memory apparatus is provided. The high voltage generating circuit includes a capacitor spaced from a semiconductor substrate and electrically insulated from the semiconductor substrate. A switching device, which is electrically connected to the capacitor, is electrically insulated from the semiconductor substrate. | 12-10-2015 |
20150348992 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device and a method of manufacturing the same. The semiconductor device includes a channel, a gate, and a memory layer is interposed between the channel and the gate. The memory layer includes a tunnel insulating layer adjacent to the channel, a charge blocking layer adjacent to the gate, and a charge storing layer interposed between the tunnel insulating layer and the charge blocking layer. The tunnel insulating layer includes a first insulating layer adjacent to the channel and an air layer interposed between the first insulating layer and the charge storing layer. | 12-03-2015 |
20150348990 | NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - This technology relates to a nonvolatile memory device and a method for fabricating the same. The nonvolatile memory device may include a pipe connection gate electrode over a substrate, one or more pipe channel layers formed within the pipe connection gate electrode, pairs of main channel layers each connected with the pipe channel layer and extended in a direction substantially perpendicular to the substrate, a plurality of interlayer insulating layers and a plurality of cell gate electrodes alternately stacked along the main channel layers, and metal silicide layers configured to be in contact with the pipe connection gate electrode. The electric resistance of the pipe connection gate electrode may be greatly reduced without deteriorating the characteristics of the memory layers by forming the metal silicide layers coming in contact with the pipe connection gate electrode. | 12-03-2015 |
20150348980 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a substrate including a plurality of active regions divided by a plurality of trenches, a plurality of tunnel insulating layer patterns formed over the active regions, a plurality of conductive film patterns formed over the tunnel insulating film patterns, a plurality of first isolation layers formed on sidewalls and bottom surfaces of the trenches, and a plurality of second isolation layers formed between the conductive film patterns. | 12-03-2015 |
20150348622 | RESISTIVE MEMORY DEVICE, METHOD OF FABRICATING THE SAME, AND MEMORY APPARATUS AND DATA PROCESSING SYSTEM HAVING THE SAME - A resistive memory device capable of implementing a multi-level cell, a method of fabricating the same, and a memory apparatus and data processing system including the same are provided. The resistive memory device includes a lower electrode, a first phase-change material layer formed over the lower electrode, a second phase-change material layer formed to surround an outer sidewall of the first phase-change material layer, and an upper electrode formed over the first phase-change material layer and the second phase-change material layer. | 12-03-2015 |
20150348620 | SEMICONDUCTOR MEMORY DEVICE AND OPERATION METHOD THEREOF - A semiconductor memory device includes a memory cell suitable for having a predetermined cell state based on a data stored therein, a control signal generation unit suitable for generating a control signal for changing the cell state of the memory cell during a reading operation, an information storage unit suitable for storing a variation status information of the control signal to which a moment when the cell state of the memory cell changes is reflected, and an output unit suitable for outputting the variation status information of the control signal stored in the information storage unit as a signal corresponding to the data stored in the memory cell. | 12-03-2015 |
20150340998 | DIFFERENTIAL AMPLIFIER - A differential amplification circuit includes a first current control unit configured to control driving current in response to a voltage level difference between first input voltage and second input voltage, a second current control unit configured to control the driving current in response to a voltage level difference between the second input voltage independent from temperature and a temperature voltage depending on the temperature, and a signal output unit configured to generate a detection signal in response to the driving current. | 11-26-2015 |
20150340463 | THREE DIMENSIONAL SEMICONDUCTOR DEVICE HAVING LATERAL CHANNEL AND METHOD OF MANUFACTURING THE SAME - A 3D semiconductor device and a method of manufacturing the same are provided. The 3D semiconductor device includes a semiconductor substrate, an insulating layer formed on the semiconductor substrate, an active line including a source region and a drain region formed on the insulating layer, a gate electrode located on a portion of the active line, corresponding to a region between the source region and the drain region, and extending to a direction substantially perpendicular to the active line, and a line-shaped common source node formed to be electrically coupled to the source region and extending substantially in parallel to the gate electrode in a space between gate electrodes. | 11-26-2015 |
20150340407 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - A semiconductor device and a fabrication method thereof are provided The semiconductor device includes a local silicon-on-insulator (SOI) substrate in which a portion of a line-shaped active region is connected to a semiconductor substrate, and a remaining portion thereof is insulated from the semiconductor substrate, gate structures formed in a line shape to be substantially perpendicular to the active region on the active region insulated from the semiconductor substrate, and to surround a side and an upper surface of the active region, and having a stacking structure of a gate insulating layer, a liner conductive layer, a gate conductive layer, and a hard mask layer, a source region formed in the active region connected to the semiconductor substrate, and a drain region formed in the active region insulated from the semiconductor substrate between the gate structures. | 11-26-2015 |
20150333741 | SEMICONDUCTOR DEVICE WITH CLOCK-BASED SIGNAL INPUT CIRCUIT - A semiconductor device includes a signal input circuit suitable for synchronizing an input signal with a clock signal and receiving the clock signal as a power source when the input signal has a first phase, where the signal input circuit amplifies a swing width of the input signal based on a swing width of the clock. | 11-19-2015 |
20150318330 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a semiconductor substrate in which a word line region is formed, and a barrier metal layer arranged on the word line region and causing a Schottky junction. The barrier metal layer includes a first nitride material, in which a first material is nitrified, and a second nitride material, in which a second material is nitrified. The barrier metal layer is formed of a mixture of the first nitride material and the second nitride material. At least one of the first material or the second material is rich in a metal used to form the first nitride material or the second nitride material. | 11-05-2015 |
20150318329 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a semiconductor substrate in which a word line region is formed, and a barrier metal layer arranged on the word line region and causing a Schottky junction. The barrier metal layer includes a first nitride material, in which a first material is nitrified, and a second nitride material, in which a second material is nitrified. The barrier metal layer is formed of a mixture of the first nitride material and the second nitride material. At least one of the first material or the second material is rich in a metal used to form the first nitride material or the second nitride material. | 11-05-2015 |
20150311255 | VARIABLE RESISTIVE MEMORY DEVICE INCLUDING VERTICAL CHANNEL PMOS TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A semiconductor device having a vertical channel, a variable resistive memory device including the same, and a method of manufacturing the same are provided. The semiconductor device having a vertical channel includes a vertical pillar formed on a semiconductor substrate and including an inner portion and an outer portion surrounding the inner portion, junction regions formed in the outer portion of the vertical pillar, and a gate formed to surround the vertical pillar. The inner portion of the vertical pillar has a lattice constant smaller than that of the outer portion of the vertical pillar. | 10-29-2015 |
20150311209 | 3-D NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A three-dimensional (3-D) non-volatile memory device includes a plurality of word line structures extended in parallel and including a plurality of interlayer dielectric layers and a plurality of word lines that are alternately stacked over a substrate, a plurality of channels protruding from the substrate configured to penetrate the plurality of interlayer dielectric layers and the plurality of word lines, and an air gap formed between the plurality of word line structures. | 10-29-2015 |
20150310936 | MONITORING DEVICE OF INTEGRATED CIRCUIT - A semiconductor memory device includes a plurality of data input/output pads configured to transmit and receive data to and from memory cells, an alert pad configured to output data error information while the data is transmitted and received, and a monitoring device configured to output the data error information to the alert pad in a first mode and to output monitoring information to the alert pad in a second mode. | 10-29-2015 |
20150310935 | MONITORING DEVICE OF INTEGRATED CIRCUIT - A semiconductor memory device includes a plurality of data input/output pads configured to transmit and receive data to and from memory cells, an alert pad configured to output data error information while the data is transmitted and received, and a monitoring device configured to output the data error information to the alert pad in a first mode and to output monitoring information to the alert pad in a second mode. | 10-29-2015 |
20150270283 | NONVOLATILE MEMORY DEVICE, METHOD FOR OPERATING THE SAME, AND METHOD FOR FABRICATING THE SAME - A nonvolatile memory device includes a substrate including a plurality of active regions which are constituted by a P-type semiconductor; first and second vertical strings disposed over each active region, wherein each of the first and second strings includes a channel vertically extending from the substrate, a plurality of memory cells, and a select transistor, wherein the plurality of memory cells and the select transistor are located along the channel; and a bottom gate being interposed between a lowermost memory cell and the substrate, contacting the channel with a first gate dielectric layer interposed therebetween, and controlling connection of the first vertical string with the second vertical string. | 09-24-2015 |
20150270248 | SEMICONDUCTOR PACKAGE AND GUARD UNITS - A semiconductor package may include: a plurality of slave chips stacked over a master chip through a through silicon via (TSV); a first guard unit disposed around each of the slave chips; and a second guard unit formed at a first distance from the first guard unit and disposed at the master chip. | 09-24-2015 |
20150255717 | VARIABLE RESISTIVE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME AND METHOD OF DRIVING THE SAME - Provided are a variable resistive memory device, and methods of fabricating and driving the same. The variable resistive memory device includes a plurality of memory cells arranged in a first direction and in a second direction different from the first direction, each of the plurality of memory cells comprising a variable resistor and a selection device serially connected W the variable resistor. A common wiring is electrically connected to first ends of the plurality of memory cells to apply a common reference voltage, Each wiring line of a plurality of wiring lines is electrically connected to second ends of the plurality of memory cells arranged n the plurality of rows oriented in the first direction. A plurality of selection lines are respectively connected to the selection devices of the plurality of memory cells to select any one of the plurality of memory cells via the plurality of wiring lines. | 09-10-2015 |
20150249206 | ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME - This technology provides an electronic device and a method of fabricating the same. An electronic device in accordance with an implementation of this document includes semiconductor memory, and the semiconductor memory includes an interlayer dielectric layer formed over a substrate and having a contact hole; a lower contact filled in a part of the contact hole; and a variable resistance element which is disposed over and coupled to the lower contact, and has a first part filled in the contact hole and a second part disposed over the first part and protruding over the interlayer dielectric layer, wherein the first part includes a first metal which has a higher electron affinity than a component included in the second part, and an oxide of the first metal is an insulating material. | 09-03-2015 |
20150249095 | NONVOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - This technology relates to a nonvolatile memory device and a method of fabricating the same. The nonvolatile memory device may include a pipe connection gate electrode over a substrate, one or more pipe channel layers formed within the pipe connection gate electrode, pairs of main channel layers each coupled with the pipe channel layer and extended in a direction substantially perpendicular to the substrate, a plurality of interlayer insulating layers and a plurality of cell gate electrodes alternately stacked along the main channel layers, and etch stop layers including metal silicide and formed over the pipe connection gate electrode. | 09-03-2015 |
20150248938 | DATA STORAGE DEVICE - A data storage device that includes a nonvolatile memory device, a controller suitable for controlling the nonvolatile memory device and for reading and writing data to the nonvolatile memory device, and a power management unit suitable for supplying power to the nonvolatile memory device. The controller may control the power management unit to adjust the power supplied to the nonvolatile memory device. | 09-03-2015 |
20150236675 | SEMICONDUCTOR APPARATUS AND OPERATING METHOD THEREOF - A sense amplifier control circuit of a semiconductor apparatus includes a driving unit configured to apply a first voltage to a sense amplifier in response to a first driving signal. The driving unit may also be configured to apply a second voltage to the sense amplifier in response to a second driving signal. In addition, the driving unit may also be configured to apply a third voltage to the sense amplifier in response to a third driving signal. A switching unit may be configured to electrically couple a first node to a second node in response to a control signal. The first driving signal is output to the first node, and the second driving signal is output to the second node. | 08-20-2015 |
20150236154 | ANTI-FUSE AND METHOD FOR FORMING THE SAME - An anti-fuse includes a first gate structure disposed in a semiconductor substrate and a second gate structure that is spaced apart from the first gate structure by a distance and disposed in the semiconductor substrate. The first and second gate structures have different depths from each other in the semiconductor substrate. | 08-20-2015 |
20150236126 | SEMICONDUCTOR DEVICE HAVING VERTICAL CHANNEL, RESISTIVE MEMORY DEVICE INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME - A semiconductor device, a resistive memory device including the same, and a method of manufacturing the same are provided. The semiconductor device includes a pillar extending substantially perpendicular from a semiconductor substrate, the pillar including an inner portion and an outer portion surrounding the inner portion. A junction region is formed in an upper region and a lower region of the vertical pillar, and a gate surrounds the pillar. The inner portion of the pillar includes a semiconductor layer having a lattice constant that is larger than a lattice constant of the outer portion of the pillar. | 08-20-2015 |
20150236039 | NONVOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - This technology relates to a nonvolatile memory device and a method of fabricating the same. The nonvolatile memory device may include a pipe connection gate electrode configured to have a bottom buried in a groove formed in a substrate, one or more pipe channel layers formed within the pipe connection gate electrode, pairs of main channel layers each coupled to the pipe channel layer and extended in a direction substantially perpendicular to the substrate, and a plurality of interlayer insulating layers and a plurality of cell gate electrodes alternately stacked along the main channel layers, wherein the pipe connection gate electrode includes a metal silicide layer formed within the groove. The electric resistance of the pipe connection gate electrode may be greatly reduced without an increase in a substantial height by forming the metal silicide layer buried in the substrate under the pipe connection gate electrode. | 08-20-2015 |
20150236037 | NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A non-volatile memory device in accordance with one embodiment of the present invention includes a substrate including a P-type impurity-doped region, a channel structure comprising a plurality of interlayer insulating layers that are alternately stacked with a plurality of channel layers on the substrate, a P-type semiconductor pattern that contacts sidewalls of the plurality of channel layers, wherein a lower end of the P-type semiconductor pattern contacts the P-type impurity-doped region, and source lines that are disposed at both sides of the P-type semiconductor pattern and contact the sidewalls of the plurality of channel layers. | 08-20-2015 |
20150236036 | SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING AND OPERATING THE SAME - A semiconductor device includes a memory cell array including a vertical channel layer, two or more selection transistors, and a plurality of memory cells formed along the vertical channel; a peripheral circuit suitable for programming the two or more selection transistors and the memory cells; and a control circuit suitable for controlling the peripheral circuit to decrease a pass voltage applied to one word line adjacent to two or more selection lines coupled to the respective selection transistors, during a program operation in which the peripheral circuit applies a program voltage to the two or more selection lines and applies the pass voltage to a plurality of word lines connected to the memory cells. | 08-20-2015 |
20150235715 | STACKED SEMICONDUCTOR MEMORY APPARATUS AND TEST CIRCUIT THEREFOR - A stacked semiconductor memory apparatus includes a memory module including a plurality of memory chips; and a logic circuit block with the memory module stacked thereon, configured to be electrically coupled with an interface substrate through a first terminal group and a second terminal group and to communicate with a controller, and to include a test circuit that receives a first test signal through the first terminal group from the controller and outputs the first test signal through the second terminal group in a test mode. | 08-20-2015 |
20150235687 | SEMICONDUCTOR APPARATUS AND TESTING METHOD THEREOF - A semiconductor apparatus includes a plurality of memory blocks divided into an even mat group and an odd mat group; and an active control block configured to activate any one group of the even mat group and the odd mat group at a first timing in response to a plurality of test signals, and activate the other group at a second timing. | 08-20-2015 |
20150235685 | SEMICONDUCTOR DEVICE - A semiconductor device includes a driving signal generation unit configured to selectively drive a sub word line driving signal in response to a sub word line select signal. The semiconductor device also includes a sub word line driving unit configured to drive a sub word line in response to a main word line select signal and the sub word line driving signal. Further, the semiconductor device includes leakage path blocking unit configured to block a leakage path formed from the sub word line through the driving signal generation unit, in response to a test signal. | 08-20-2015 |
20150234010 | TEST CIRCUIT AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME - A test circuit of a semiconductor apparatus includes a plurality of pads, a pattern generator configured to generate at least one internal test pattern in response to at least one pattern select signal, and a plurality of test units configured to transmit the at least one internal test pattern through the plurality of pads in response to a self test mode signal, and to compare the at least one test pattern received via the plurality of pads with the at least one generated internal test pattern and generate at least one test determination value based on the comparison. | 08-20-2015 |
20150228890 | RESISTIVE MEMORY DEVICE - A resistive memory device includes: a resistive layer which includes a first magnetic layer, a second magnetic layer, and a tunnel insulating layer interposed between the first magnetic layer and the second magnetic layer, and is switched between different resistance states; and a strained film formed over a sidewall of the resistive layer and applying a strain to the resistive layer, wherein the strained film includes a semiconductor material containing ions implanted therein | 08-13-2015 |
20150228767 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor memory device and a method of manufacturing the same are provided. The device includes a semiconductor substrate in which active regions and isolation regions are alternately defined, and a support region is defined in a direction crossing the active regions and the isolation regions, first trenches formed in the isolation regions, second trenches formed under the first trenches in the active regions and the isolation regions; and a support layer formed under the first trenches in the support region. | 08-13-2015 |
20150228751 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device forms a salicide layer to surround an upper surface and a circumference of a lateral surface of a pillar. A contact area between the pillar and a lower electrode may be increased to reduce a contact resistance. | 08-13-2015 |
20150228750 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device forms a salicide layer to surround an upper surface and a circumference of a lateral surface of a pillar. A contact area between the pillar and a lower electrode may be increased to reduce a contact resistance. | 08-13-2015 |
20150228709 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Disclosed is a semiconductor device having a substrate including first and second regions. First interlayer insulation layers and conductive patterns alternately are stacked on a first region of the substrate. A second interlayer insulation layer covers the first interlayer insulation layers and the conductive patterns. A resistor is formed in the second interlayer insulation layer in the second region of the substrate. | 08-13-2015 |
20150228319 | INTERNAL ADDRESS GENERATION CIRCUITS - Internal address generation circuits are provided. The internal address generation circuit includes an aging detector and an address decoder. The aging detector generates an aging signal enabled when the number of times that an internal command signal for accessing memory cells is inputted is equal to or more than a reference number. The address decoder decodes an address signal in response to the aging signal to generate an internal address signal. | 08-13-2015 |
20150228311 | SEMICONDUCTOR MEMORY APPARATUS, AND REFERENCE VOLTAGE CONTROL CIRCUIT AND INTERNAL VOLTAGE GENERATION CIRCUIT THEREFOR - An internal voltage control circuit according to an embodiment may include a source power supply selection unit configured to receive a first internal power supply voltage and a second internal power supply voltage and selecting the first internal power supply voltage and the second internal power supply voltage as a source voltage in response to a test mode enable signal, a first reference voltage generation unit configured to receive the source voltage from the source power supply selection unit, and configured to generate a to first low reference voltage and a first high reference voltage. The reference voltage control circuit may also include a second reference voltage generation unit configured to receive the first internal power supply voltage and configured to generate a second low reference voltage and a second high reference voltage. | 08-13-2015 |
20150227417 | SEMICONDUCTOR MEMORY APPARATUS AND OPERATING METHOD THEREOF - A semiconductor memory apparatus may include an error check and correction circuit block configured to receive a plurality of cell data, and output error-checked data and error data discrimination signals after receiving an error check enable signal; and a data bus inversion circuit block configured to receive the plurality of cell data, and output the plurality of cell data by inverting or non-inverting the cell data after receiving a read data bus inversion enable signal, the error check enable signal and the error data discrimination signals. | 08-13-2015 |
20150221397 | SEMICONDUCTOR DEVICES - A semiconductor device includes a normal test signal generator and a termination signal generator. The normal test signal generator is suitable for generating a first enablement signal and a first pulse signal in response to an external command signal when a first code signal and a second code signal have a predetermined logic combination. Further, the normal test signal generator is suitable for decoding a first test address signal and a second test address signal to generate first to fourth normal test signals. The termination signal generator is suitable for receiving the first pulse signal during an enablement period of the first enablement signal to generate a first termination signal which is enabled when a predetermined signal among the first to fourth normal test signals is generated. | 08-06-2015 |
20150221395 | SEMICONDUCTOR DEVICES AND SEMICONDUCTOR SYSTEMS INCLUDING THE SAME - The semiconductor device includes a latch pulse generator and a data latch unit. The latch pulse generator generates a test section signal in response to a test pulse signal. Further, the latch pulse generator generates a first latch pulse signal in response to the test pulse signal and the test section signal. The data latch unit latches a selection data in response to the first latch pulse signal to generate a fuse data for programming a fuse array. | 08-06-2015 |
20150221394 | SEMICONDUCTOR DEVICES AND SEMICONDUCTOR SYSTEMS INCLUDING THE SAME - A semiconductor device including a first latch unit suitable for storing a first address of a first memory cell tested in a first cell array block, a second latch unit suitable for storing a second address of a second memory cell tested in a second cell array block, a first selector suitable for receiving a first selection signal or a second selection signal to output any one of the first address and the second address as a selected address, and a program controller suitable for determining whether the selected address has to be stored in a fuse array and to control an operation for programming the fuse array. | 08-06-2015 |
20150221393 | SEMICONDUCTOR DEVICE INCLUDING FUSE ARRAY - The semiconductor device includes a control signal driver, a control signal latch unit, an internal driver and a buffer. The control signal driver drives a control signal in response to a fuse reset signal, a fuse set signal and a fuse data. The control signal latch unit is suitable for latching the control signal. The internal driver drives an internal node in response to the control signal, an address signal and a write strobe signal. The buffer buffers a signal of the internal node to generate the redundancy signal. | 08-06-2015 |
20150221392 | SEMICONDUCTOR DEVICES INCLUDING E-FUSE ARRAYS - Semiconductor systems are provided. The semiconductor system includes a boot-up operation circuit and a timing sensor. The boot-up operation circuit transmits control data stored in a fuse array portion to a first data latch unit and a second data latch unit. The timing sensor detects timings of internal control signals to generate a restart signal. The boot-up operation circuit re-transmits the control data to the first and second data latch units. | 08-06-2015 |
20150221370 | MEMORY SYSTEM - The memory system includes at least one volatile memory configured to store data. The memory system also includes a non-volatile memory controller configured to provide a control signal to allow the data to be stored in a non-volatile memory during a power interruption mode. In addition, the memory system includes a termination resistor (TER) configured to control a data path in response to a power interruption signal. | 08-06-2015 |
20150221360 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes a memory cell array configured to include a plurality of word lines, a dock enable buffer configured to receive a clock enable signal, a plurality of command buffers configured to receive a plurality of commands, a refresh control unit configured to sequentially activate the plurality of word lines in a self-refresh mode, a command decoder configured to decode the clock enable signal and the plurality of commands, and to allow the refresh control unit to enter the self-refresh mode or exit from the self-refresh mode, and a buffer control unit configured to disable the plurality of command buffers when the clock enable signal is deactivated, and to enable the plurality of command buffers when the refresh control unit exits from the self-refresh mode. | 08-06-2015 |
20150221359 | SEMICONDUCTOR DEVICES - A semiconductor device includes a section signal generator and a decoder. The section signal generator generates a section signal by retarding a pre-section signal including a pulse created during a read operation or a write operation by a delay time that is set according to a level combination of first and second test mode signals. The decoder decodes address signals in response to a pulse of the section signal to generate column selection signals, one of which is selectively enabled, to store an external data in a memory cell of an internal circuit or to output a data stored in a memory cell of an internal circuit. | 08-06-2015 |
20150221353 | DATA SENSING CIRCUIT AND SEMICONDUCTOR APPARATUS USING THE SAME - A data sensing circuit may include a pair of first signal lines, and a pair of second signal lines precharged with a first power supply voltage. The data sensing circuit may also include a line level control block configured for applying a second power supply voltage to any one signal line of the pair of second signal lines in response to a read command. | 08-06-2015 |
20150221352 | SEMICONDUCTOR DEVICES INCLUDING E-FUSE ARRAYS - Semiconductor devices are provided. The semiconductor device includes a voltage generation control circuit, a read voltage generator, and a control data storage unit. The voltage generation control circuit generates a voltage control signal enabled during a boot-up operation and disabled after the boot-up operation. The read voltage generator generates a read voltage signal in response to a read signal and the voltage control signal. The control data storage unit executes the boot-up operation in response to the read voltage signal, a row address signal and a column address signal to transmit control data to a first data latch unit and a second data latch unit. | 08-06-2015 |
20150220102 | LEVEL DETECTION CIRCUITS AND SEMICONDUCTOR DEVICES INCLUDING THE SAME - Level detection circuit includes a reference voltage generator, a level signal generator, and a comparator. The reference voltage generator includes a temperature dependent element and generates a reference voltage signal whose level varies according to a temperature characteristic of the temperature dependent element. The level signal generator includes a temperature compensation element and generates a level signal from a target voltage signal. A level of the level signal varies according to a temperature characteristic of the temperature compensation element. The comparator compares a level of the level signal with a level of the reference voltage signal to generate a detection voltage signal. | 08-06-2015 |
20150220092 | INTERNAL VOLTAGE GENERATION CIRCUITS - Internal voltage generation circuits are provided. The internal voltage generation circuit includes a drive controller and an initialization unit. The drive controller detects a level of an internal voltage signal in response to a reference voltage signal to generate a drive signal and drives the internal voltage signal in response to the drive signal. The initialization unit initializes the drive signal in synchronization with an internal command signal and terminates an initialization of the drive signal during a predetermined period. | 08-06-2015 |
20150214360 | SEMICONDUCTOR DEVICE - The present invention provides a semiconductor device that ensures both the breakdown voltage characteristic and specific on-resistance characteristic required for a high-voltage semiconductor device and that includes a gate over a substrate, a source region formed at one side of the gate, a drain region formed at the other side of the gate, and a plurality of device isolation films formed between the source region and the drain region, below the gate. | 07-30-2015 |
20150214153 | SEMICONDUCTOR APPARATUS - A semiconductor apparatus has one or more semiconductor chips. The semiconductor apparatus may include a power supply pad; power lines disposed on one side of the power supply pad, and including a first power line and a second power line; and connection lines connecting the power supply pad and the power lines. The connection lines may include a plurality of first connection lines connecting the power supply pad and the first power line, and a plurality of second connection lines connecting the power supply pad and the second power line, and disposed between the first connection lines. One or more pair of adjacent first connection lines may have a connection part by which the pair of adjacent first connection lines are connected with each other. | 07-30-2015 |
20150213907 | SEMICONDUCTOR TEST DEVICE - A semiconductor test device performs a test using a high-speed internal clock. The semiconductor test device includes a clock generator suitable for generating an internal clock in response to a test mode signal during a test mode, a data generator suitable for generating internal data in response to the internal clock, and a data latch circuit suitable for latching the internal data in response to the internal clock, and outputting the latched data to an internal logic circuit. | 07-30-2015 |
20150213859 | BURST LENGTH CONTROL CIRCUIT - A burst length control circuit includes a burst length input circuit that outputs a mode register burst length signal and a burst length on-the-fly signal, a burst length generator circuit that outputs a burst length signal, and a burst length adjuster that delays the burst length signal by a write latency time to produce a write burst length control signal. A selection circuit selects any one of the burst length signal and the write burst length control signal according to a write read command signal and an on-the-fly signal received from the burst length input circuit, and outputs a burst length control signal. A burst stop counter counts the burst length control signal according to an internal write command signal and an internal read command signal, and outputs a burst stop signal corresponding to a selected burst length. | 07-30-2015 |
20150213856 | PRECHARGE CIRCUIT AND SEMICONDUCTOR MEMORY APPARATUS USING THE SAME - A precharge circuit may include a precharge control unit, a first precharge unit, and a second precharge unit. The precharge control unit may generate a read precharge signal and a write precharge signal in response to a read signal, a write signal, and a precharge signal. The first precharge unit may precharge a data input/output line to a first voltage level in response to the read precharge signal. The second precharge unit may precharge the data input/output line to either a second voltage level or a third voltage level in response to the write precharge signal. | 07-30-2015 |
20150213845 | SYSTEM USING MINIMUM OPERATION POWER AND POWER SUPPLY VOLTAGE SETTING METHOD OF MEMORY DEVICE - A system includes a memory device, a controller, and a power supply. The controller stores a write data in the memory device, and generates a voltage control signal by comparing a read data outputted from the memory device with the write data. The power supply controls a level of a power supply voltage supplied to the memory device in response to the voltage control signal. | 07-30-2015 |
20150207073 | SEMICONDUCTOR MEMORY APPARATUS AND FABRICATION METHOD THEREOF - Semiconductor memory apparatus and a method of fabricating the same are provided. The semiconductor memory apparatus includes a semiconductor substrate in which a cell area and a peripheral area are defined, a plurality of pillars formed in the a cell area of the semiconductor substrate to a first depth, a stepped part formed in the peripheral area to a height corresponding to the first depth, a recessed part formed in the stepped part to a second depth, and a core switching device formed in the recessed part. | 07-23-2015 |
20150207068 | RESISTIVE MEMORY DEVICE AND FABRICATION METHOD THEREOF - A resistive memory device and a fabrication method thereof are provided. The resistive memory device includes a bottom structure including a heating electrode, data storage materials, each of the data storage materials formed on the bottom structure in a confined structure perpendicular to the bottom structure, and having a lower diameter smaller than an upper diameter, an upper electrode formed on each of the data storage materials, and an insulation unit formed between adjacent data storage materials. | 07-23-2015 |
20150206867 | SEMICONDUCTOR APPARATUS HAVING PAD AND BUMP - A semiconductor apparatus may include a semiconductor chip, and the semiconductor chip may include a first pad, a second pad, and a bump. The first pad may be configured to receive a signal from an external device, and the second pad may include first and second metal layers electrically isolated from each other. The bump may be stacked over the second pad, and may be configured to receive a signal from a controller chip. | 07-23-2015 |
20150206805 | SEMICONDUCTOR DEVICE WITH METAL GATE AND HIGH-K MATERIALS AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a substrate including first and second regions. A first gate stack structure containing a first effective work function adjust species is formed over the first region and a second gate stack structure containing a second effective work function adjust species is formed over the second region. A channel region is formed under the first gate stack structure and contains a threshold voltage adjust species. | 07-23-2015 |
20150206591 | NONVOLATILE MEMORY DEVICE AND OPERATING METHOD THEREOF - A nonvolatile memory device includes a channel vertically extending from a substrate, a plurality of memory cells stacked along the channel; a source region connected to a first end portion of the channel, and a bit line connected to a second end portion of the channel, wherein the first end portion of the channel that adjoins the source region is formed as an undoped semiconductor layer or a semiconductor layer doped with P-type impurities. | 07-23-2015 |
20150206563 | SEMICONDUCTOR SYSTEM - A semiconductor system includes a first clock channel and a second clock channel. The first clock channel transmits a first clock signal from a controller to a memory. The second clock channel transmits a second clock signal with a phase difference of 90° from the first clock signal, from the controller to the memory. | 07-23-2015 |
20150200656 | DUTY CYCLE CORRECTION CIRCUIT AND OPERATION METHOD THEREOF - A duty cycle correction circuit includes a clock adjustment unit configured to adjust a duty ratio of an input clock signal in response to a duty control signal and generate an output clock signal, a tracking type setting unit configured to generate an tracking type selection signal for setting a first or second tracking type based on a duty locking state of the output clock signal, and a control signal generation unit configured to generate the duty control signal, into which the first or second tracking type is incorporated, in response to the tracking type selection signal and the output clock signal. | 07-16-2015 |
20150200655 | DUTY CYCLE CORRECTION CIRCUIT AND OPERATION METHOD THEREOF - A duty cycle correction circuit includes a clock adjustment unit configured to adjust a duty ratio of an input clock signal in response to a duty control signal and generate an output clock signal, a tracking type setting unit configured to generate an tracking type selection signal for setting a first or second tracking type based on a duty locking state of the output clock signal, and a control signal generation unit configured to generate the duty control signal, into which the first or second tracking type is incorporated, in response to the tracking type selection signal and the output clock signal. | 07-16-2015 |
20150200368 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING PHASE-CHANGE STRUCTURE AND METHOD OF MANUFACTURING THE SAME - A semiconductor integrated circuit device including a phase-change structure and a method of manufacturing the same are provided. The method includes providing a semiconductor substrate including a lower electrode, sequentially stacking a plurality of phase-change material layers on the semiconductor substrate, and patterning the stacked plurality of phase-change material layers in a stepwise manner to form a phase-change structure. | 07-16-2015 |
20150200358 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING VARIABLE RESISTIVE LAYER AND METHOD OF MANUFACTURING THE SAME - A semiconductor integrated circuit device includes a semiconductor substrate, a lower electrode disposed on the semiconductor substrate wherein an upper surface of the lower electrode has a recess, an interlayer insulating layer disposed on the semiconductor substrate and the lower electrode, the interlayer insulating layer including a variable resistive region exposing the upper surface of the lower electrode, and a variable resistive layer filled in the variable resistive region that contacts the recess of the lower electrode. The variable resistive layer is formed to have an increased width toward a top and a bottom thereof. | 07-16-2015 |
20150200088 | ACCESS DEVICE, FABRICATION METHOD THEREOF, AND SEMICONDUCTOR MEMORY DEVICE HAVING THE SAME - An access device having a reduced height and capable of suppressing leakage current, a method of fabricating the same, and a semiconductor memory device including the same, are provided. The access device may include a stacked structure including a first-type semiconductor layer having a first dopant, a second-type semiconductor layer having a second dopant, and a third-type semiconductor layer. A first counter-doping layer, having a counter-dopant to the first dopant, is interposed between the first-type semiconductor layer and the third-type semiconductor layer. A second counter-doping layer, having a counter-dopant to the second dopant, is interposed between the third-type semiconductor layer and the second-type semiconductor layer. | 07-16-2015 |
20150198968 | SEMICONDUCTOR DEVICES AND SEMICONDUCTOR SYSTEMS INCLUDING THE SAME - The semiconductor device includes a command generator, an information signal storage unit, a termination signal generator and a code generator. The command generator generates a mode register write command signal, a start command signal and a termination command signal from external command signals. The information signal storage unit extracts information signals from the external command signals to store the information signals and output the information signals. The termination signal generator generates a termination signal in response to the information signals. The code generator generates code signals to control a timing of a control signal. | 07-16-2015 |
20150194410 | CHIP STACK PACKAGES, METHODS OF FABRICATING THE SAME, ELECTRONIC SYSTEMS INCLUDING THE SAME AND MEMORY CARDS INCLUDING THE SAME - A chip stack package includes a first chip disposed over a substrate, a second chip disposed over the first chip and having an overhang, and a first supporter attached to a bottom surface of the overhang of the second chip and a sidewall of the first chip. The overhang of the second chip protrudes from the sidewall of the first chip. | 07-09-2015 |
20150194199 | SEMICONDUCTOR DEVICES AND SEMICONDUCTOR SYSTEMS INCLUDING THE SAME - The semiconductor device may include a first internal command generator suitable generating first internal command signals after decoding the external command signals in response to the external control signal, a column control signal generator suitable for generating a column control signal after decoding the external command signals in response to the external control signal, and a second internal command generator suitable for generating second internal command signals from the first internal command signals in response to the column control signal. Related systems are also provided. | 07-09-2015 |
20150188566 | APPARATUS AND METHOD FOR PROCESSING DATA - A data processing device includes a compression circuit and a padding circuit. The compression circuit is configured to compare pairs of two contiguous bits within data composed of 2n bits (where n is a natural number), and compress the data based on a result of the comparison. The padding circuit is configured to generate transmission data of 2n bits by padding the compressed data with a dummy pad. | 07-02-2015 |
20150188544 | SEMICONDUCTOR APPARATUS CROSS-REFERENCES TO RELATED APPLICATION - A semiconductor apparatus including an inverter chain including a plurality of inverters, wherein the plurality of inverters are electrically coupled in series, and at least one of the plurality of inverters includes at least two output nodes. | 07-02-2015 |
20150188542 | DATA TRANSMISSION CIRCUIT - A data transmission circuit may include a first driving block configured to drive an output terminal for a first time in response to a data driving signal and a level of the output terminal, and a second driving block configured to drive the output terminal for a second time after the first time, in response to the data driving signal. | 07-02-2015 |
20150188529 | SEMICONDUCTOR DEVICE - A semiconductor device including a common delay circuit configured to delay an input signal in response to a delay control code to output a first delayed input signal and a second delayed input signal; a first delay circuit configured to delay the first delayed input signal in response to the delay control code and to output a first output signal; and a second delay circuit configured to delay the second delayed input signal in response to the delay control code and to output a second output signal. | 07-02-2015 |
20150188526 | SEMICONDUCTOR APPARATUS - A delay circuit of a semiconductor apparatus includes a control signal generation block configured to output a control signal having an analog voltage level in response to an input signal, and an input/output block configured to delay the input signal by a delay amount based on the analog voltage level of the control signal, and output a resultant signal. | 07-02-2015 |
20150188518 | SEMICONDUTOR APPARATUS FOR CONTROLLING BACK BIAS - A semiconductor apparatus includes a back bias control block, a first back bias switching block and second back bias switching block. The back bias control block is configured to generate a first P channel control signal and a second N channel control signal. The first back bias switching block is configured to provide one of first and second high voltages as a first P channel back bias of a first circuit in response to the first P channel control signal, and to provide one of first and second low voltages as a first N channel back bias of the first circuit in response to the first N channel control signal. The second back bias switching block is configured to provide one of the first and second high voltages as a second P channel back bias of a second circuit in response to the second P channel control signal, and to provide one of the first and second low voltages as a second N channel back bias of the second circuit in response to the second N channel control signal. | 07-02-2015 |
20150187911 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - A semiconductor device includes a gate electrode formed on a sidewall of a structure extending from a semiconductor substrate. A junction region is form in the structure to a first depth from a top of the structure and formed to overlap the gate electrode. A protection layer is formed between an outer wall of the structure and the gate electrode to a second depth less than the first depth from the top of the structure. | 07-02-2015 |
20150187842 | NONVOLATILE MEMORY DEVICES - A nonvolatile memory device includes a plurality of first electrode lines including upper portions that have convex top surfaces. A plurality of second electrode lines are disposed over the plurality of first electrode lines to cross the plurality of first electrode lines, and a plurality of memory patterns are disposed between the plurality of first electrode lines and the plurality of second electrode lines. | 07-02-2015 |
20150187789 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device that includes a plurality of first conductive patterns stacked over a substrate, dummy patterns formed in the first conductive patterns, respectively, first barrier patterns each surrounding the respective first conductive patterns and partially interposed between the respective first conductive patterns and the respective dummy patterns, second barrier patterns each surrounding the respective first barrier patterns and the respective dummy patterns, a second conductive pattern located over or under the first conductive patterns, and a third barrier pattern surrounding the second conductive pattern, wherein the second conductive pattern has a greater thickness than the first conductive patterns. | 07-02-2015 |
20150187744 | 3D SEMICONDUCTOR APPARATUS FOR INITIALIZING CHANNELS - A semiconductor apparatus includes a plurality of stack dies which are formed with a predetermined number of channels. The semiconductor apparatus also includes a base die configured to initialize a channel not electrically coupled with the stack dies. | 07-02-2015 |
20150187705 | SEMICONDUCTOR PACKAGE HAVING EMI SHIELDING AND METHOD OF FABRICATING THE SAME - A semiconductor package includes a dielectric layer in which a chip is embedded, interconnection parts disposed on a first surface of the dielectric layer, through connectors each of which penetrates a portion of the dielectric layer over the chip to electrically couple the chip to a corresponding one of the interconnection parts, a shielding plate covering a second surface of the dielectric layer that is opposite to the first surface, and a shielding encapsulation part connected to one of the interconnection parts and covering sidewalls of the dielectric layer. The shielding encapsulation part includes a portion contacting the shielding plate. | 07-02-2015 |
20150187698 | SEMICONDUCTOR APPARATUS AND AN IMPROVED STRUCTURE FOR POWER LINES - A semiconductor apparatus includes a first power supply pad configured to supply a first power; a second power supply pad configured to supply a second power; a first power line configured to be directly electrically coupled to the first power supply pad; and a second power line configured to be directly electrically coupled to the second power supply pad. | 07-02-2015 |
20150187680 | SEMICONDUCTOR APPARATUS, MANUFACTURING METHOD THEREOF AND TESTING METHOD THEREOF - A semiconductor apparatus includes one or more semiconductor chips. Each semiconductor chip includes a semiconductor substrate formed with a through-silicon via, and a bottom wiring layer with a first dielectric layer formed on a bottom of the semiconductor substrate. A first opening is defined in the first dielectric layer. | 07-02-2015 |
20150187644 | SEMICONDUCTOR DEVICE WITH AIR GAP AND METHOD OF FABRICATING THE SAME - A method of fabricating a semiconductor device and a semiconductor device formed by the method. The method includes form a stack conductive structure by stacking a first conductive pattern and an insulation pattern over a substrate; forming a sacrificial pattern over sidewalls of the stack conductive structure; forming a second conductive pattern having a recessed surface lower than a top surface of the stack conductive structure; forming a sacrificial spacer to expose sidewalls of the insulation pattern by removing an upper portion of the sacrificial pattern; reducing a width of the exposed portion of the insulation patters; forming a capping spacer to cap the sidewalls of the insulation pattern having the reduced width over the sacrificial spacer; and forming an air gap between the first conductive pattern and the second conductive pattern by converting the sacrificial spacer to volatile byproducts | 07-02-2015 |
20150187438 | SEMICONDUCTOR MEMORY APPARATUS AND TEST METHOD USING THE SAME - A semiconductor memory apparatus includes first data outputted from a first data storage region; second data outputted from a second data storage region; a data comparison block configured to perform a comparison to determine whether the first data and the second data are the same, and generate a comparison result signal; a timing control block configured to latch the comparison result signal in response to a clock and a latency signal, and output a comparison signal; and a data output block configured to receive a test signal and invert the first data in response to the comparison signal and output data. | 07-02-2015 |
20150187434 | TEST CIRCUIT OF SEMICONDUCTOR APPARATUS - A test circuit of a semiconductor apparatus includes a plurality of memory blocks, and a comparison block configured to compare data of two memory blocks, wherein the two of the plurality of memory blocks do not share word lines. | 07-02-2015 |
20150187426 | MEMORY SYSTEM AND METHOD FOR OPERATING THE SAME - A memory system and a method for operating the same are provided. The memory system includes a semiconductor memory device suitable for performing an erase operation in response to a control signal, and if an erase command is input from a host, a controller suitable for temporarily storing erase block information according the erase command, and when a program command is input after the erase command is input, transmitting the control signal according to the erase command to the semiconductor memory device. | 07-02-2015 |
20150187422 | SEMICONDUCTOR DEVICE - A semiconductor device includes first memory strings coupled between a first common source line formed on a substrate and bit lines formed over the first common source line, and second memory strings coupled between the bit lines and a second common source line formed over the bit lines, wherein each of the bit lines includes a stacked structure of a conductive layer and a silicon layer formed on the conductive layer. | 07-02-2015 |
20150187408 | CIRCUIT FOR SMALL SWING DATA LINE AND METHOD OF OPERATING THE SAME - A circuit includes a first buffer configured to provide data on a signal line. The first buffer may be powered by a first power supply voltage. The circuit further includes a tri-state buffer coupled to receive the data provided on the signal line. The tri-state buffer may be powered by a second power supply voltage that has a magnitude greater than that of the first power supply voltage. During operation, the tri-state buffer may be activated for a predetermined period of time during which data is made available on the signal line. | 07-02-2015 |
20150187407 | POWER SUPPLY SCHEME FOR SMALL SWING DATA LINE AND METHOD OF OPERATING THE SAME - A circuit includes a plurality of buffers configured to provide data on a corresponding signal line. Each of the plurality of buffers may be coupled to a power supply voltage through a corresponding diode. A plurality of receiving circuits may be coupled to receive the data provided on a corresponding one of the plurality of signal lines. The plurality of receiving circuits may be directly powered by the power supply voltage. | 07-02-2015 |
20150187406 | ACTIVE CONTROL DEVICE, SEMICONDUCTOR DEVICE AND SYSTEM INCLUDING THE SAME - Disclosed herein are an active control device, a semiconductor device and system including the same. The active control device may include a refresh control unit configured for outputting a refresh signal by controlling a delay time for a refresh start time when a refresh operation is performed and a precharge signal generation unit configured for generating a bank precharge signal for precharging a bank in response to the refresh signal. The refresh control unit may include a refresh delay unit for delaying a bank-active signal for a specific time and outputting a delay signal, and the refresh delay unit may be operably coupled with a plurality of banks in common. | 07-02-2015 |
20150187405 | STACKED SEMICONDUCTOR APPARATUS FOR GENERATING REFRESH SIGNAL - A stacked semiconductor apparatus includes a plurality of chips which are stacked one upon the other. One chip of the plurality of chips may be configured to generate a plurality of refresh period signals for performing refresh operations within the plurality of chips, and may be configured to transmit the plurality of refresh period signals to the plurality of chips excluding the one chip. The plurality of chips may respectively receive refresh period signals allocated to them according to chip ID signals, and may perform the refresh operations. | 07-02-2015 |
20150187401 | SEMICONDUCTOR MEMORY APPARATUS - A semiconductor memory apparatus may include a clock buffer configured to receive an external clock signal, buffer the external clock signal in response to an activation control signal, and the clock buffer configured to output an internal clock signal in response to an activation control signal. The semiconductor memory apparatus may also include a delay-locked loop block configured to receive the internal clock signal outputted from the clock buffer and compare phases of the internal clock signal and a feedback clock signal, and responsively generate a delay-locked clock signal. The semiconductor memory apparatus may also include an operation control block configured to responsively generate the activation control signal which is received by the clock buffer in accordance with a result of comparing the phases of the internal clock signal and the feedback clock signal, in response to receiving a read signal. | 07-02-2015 |
20150187400 | DATA SENSING CIRCUIT OF SEMICONDUCTOR APPARATUS - A data sensing circuit of a semiconductor apparatus includes a sensing unit configured to drive a pair of output lines based on a voltage level difference between a pair of input/output lines in response to a pair of enable signals, a timing control unit configured to perform an equalizing operation between the pair of output lines while the pair of enable signals are in a deactivated state in response to a control signal, and to interrupt the equalizing operation between the pair of output lines when a predetermined period of time has passed following the activation of the pair of enable signals, and a control signal generation unit configured to generate the control signal in response to the enable signal. | 07-02-2015 |
20150186309 | APPARATUS AND METHOD FOR PROCESSING DATA - A data processing device includes a controller. The controller includes a compression circuit configured to compare a plurality of data groups, each of which has a first burst length and is transmitted in units of an input/output width, with a predetermined pattern, and perform data compression on the data groups based on a result of comparison. The controller further includes a compression data restructuring circuit configured to generate a transmission data group by restructuring the compressed data group to have a second burst length. | 07-02-2015 |
20150185796 | SEMICONDUCTOR APPARATUS - A power-up circuit of a semiconductor apparatus includes a detection block configured to detect a first target level of an external voltage and activate a power-up signal; and a bias block configured to divide the external voltage according to a division ratio that is variable in response to the power-up signal, and output a bias voltage. | 07-02-2015 |
20150185758 | RECEIVER CIRCUIT FOR CORRECTING SKEW, SEMICONDUCTOR APPARATUS AND SYSTEM INCLUDING THE SAME - A receiver circuit includes a deserialization unit, a sampling clock control unit and a sampling clock generation unit. The deserialization unit is configured to receive sampling clock signals, sample a plurality of input data signals, and generate a plurality of internal data signals. The sampling clock control unit is configured to generate a delay control signal and a synchronization completion signal in response to the plurality of internal data signals and a first group of clock signals. The sampling clock generation unit delays the first group of clock signals and provides the delayed first group of clock signals as the sampling clock signals in response to the delay control signal, and provides a second group of clock signals having a phase leading by a predetermined amount with respect to the first group of clock signals, as the sampling clock signals in response to the synchronization completion signal. | 07-02-2015 |
20150185745 | SEMICONDUCTOR APPARATUS - A voltage generation circuit of a semiconductor apparatus includes a first detection block configured to detect an output voltage and output a first detection signal; a second detection block configured to detect the output voltage and output a second detection signal; a signal generation block configured to generate a control signal in response to the first detection signal and the second detection signal; and a voltage generation block configured to generate the output voltage in response to the control signal, wherein responding speeds of the first detection block and the second detection block with respect to a variation in the output voltage are different. | 07-02-2015 |
20150179929 | PHASE-CHANGE MEMORY DEVICE AND FABRICATION METHOD THEREOF - A phase-change memory device and a method of fabricating the same are provided. The phase-change memory device includes a semiconductor substrate in which a word line is arranged, a diode line disposed over the word line and extending parallel to the word line, a phase-change line pattern disposed over the diode line, and a projection disposed between the diode line and the phase-change line pattern and protruding from the diode line. The diode line and the projection are formed of a single layer to be in continuity with each other. | 06-25-2015 |
20150179618 | PACKAGE-ON-PACKAGE MODULES, ELECTRONIC SYSTEMS INCLUDING THE SAME, AND MEMORY CARDS INCLUDING THE SAME - Package-on-package (PoP) modules are provided. The PoP module includes a lower package and an upper package disposed over the lower package. The lower package includes a lower substrate and a lower chip disposed over a top surface of the lower substrate. The upper package includes an upper substrate, a plurality of upper chips disposed over a top surface of the upper substrate, and an upper molding member disposed over the plurality of upper chips. The upper molding member is divided into at least two parts which are separated from each other by a trench. Related memory cards and related electronic systems are also provided. | 06-25-2015 |
20150179608 | EMBEDDED PACKAGES HAVING A CONNECTION JOINT GROUP - An embedded package includes a first semiconductor chip embedded in a package substrate, a second semiconductor chip disposed over a first surface of the package substrate, and a group of external connection joints disposed on the first surface of the package substrate and between a sidewall of the second semiconductor chip and an edge of the embedded package. Related memory cards and related electronic systems are also provided. | 06-25-2015 |
20150179564 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a stacked structure having first conductive layers stacked stepwise and first insulating layers interposed between the first conductive layers, wherein undercuts are formed under the first conductive layers and each of the first conductive layers includes a first region covered by the first conductive layer and a second region extending from the first region, contact pads coupled to the second regions of the respective first conductive layers, and a liner layer formed on the contact pads and filling the undercuts. | 06-25-2015 |
20150179545 | SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME - A semiconductor device includes a through electrode penetrating a substrate such that a first end portion of the through electrode protrudes from a first surface of the substrate, a passivation layer covering the first surface of the substrate and a sidewall of the first end portion of the through electrode, a bump having a lower portion penetrating the passivation layer and coupled to the first end portion of the through electrode, and a lower metal layer disposed between the bump and the first end portion of the through electrode. The lower metal layer extends onto a sidewall of the bump and has a concave shape. | 06-25-2015 |
20150179498 | NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A nonvolatile memory device includes gate structures formed over a substrate, each gate structure including a tunnel insulating layer, a floating gate, an inter-gate dielectric layer, and a control gate that are sequentially stacked, a protective layer formed on sidewalls of the floating gate, and a second insulating layer covering the gate structures and having an air gap formed between the gate structures, wherein an adhesive strength between the second insulating layer and the protective layer is smaller than an adhesive strength between the second insulating layer and the gate structure. | 06-25-2015 |
20150179283 | SEMICONDUCTOR DEVICES AND SEMICONDUCTOR SYSTEMS INCLUDING THE SAME - Semiconductor device includes a first data input/output (I/O) portion suitable for storing data inputted thereto through a first pad in a first cell block in synchronization with a test data strobe signal or a first data strobe signal and suitable for outputting the data stored in the first cell block to the first pad, a second data I/O portion suitable for storing data inputted thereto through a second pad in a second cell block in synchronization with the test data strobe signal or a second data strobe signal and suitable for outputting the data stored in the second cell block to the second pad, and a connection portion suitable for electrically connecting the first and second pads to each other in a test mode. Related semiconductor systems are also provided. | 06-25-2015 |
20150179266 | SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF - A semiconductor memory device and an operating method thereof are set forth. The semiconductor memory device includes a memory cell array with a string. The string comprises a first dummy memory cell and a second dummy memory cell. A circuit is configured to provide a program voltage and one or more operation voltages to the string during a program operation. Control logic is configured to control the circuit to increase a first threshold voltage of the first dummy memory cell and to increase a second threshold voltage of the second dummy memory cell. The first threshold voltage and a second threshold voltage increase by a hot carrier injection mechanism. | 06-25-2015 |
20150179249 | SEMICONDUCTOR DEVICES AND INTEGRATED CIRCUITS INCLUDING THE SAME - A first semiconductor device equalizes levels of a bit line and a complementary bit line of a high-order bit line pair in a first memory block using a first drive voltage signal whose level is controlled when a power-down mode or a self-refresh mode is activated according to a level combination of high-order command/address signals. A second semiconductor device equalizes levels of a bit line and a complementary bit line of a low-order bit line pair in a second memory block using a second drive voltage signal whose level is controlled when the power-down mode or the self-refresh mode is activated according to a level combination of low-order command/address signals. | 06-25-2015 |
20150179242 | ADDRESS DETECTION CIRCUIT AND MEMORY DEVICE INCLUDING THE SAME - An address detection circuit may include one or more address storage units, an initialization unit suitable for deleting an address stored in an address storage unit having a value greater than N, wherein the value is obtained by dividing a respective total input number that addresses have been inputted after the corresponding address is stored by a respective input number corresponding to the stored address, a detection unit suitable for detecting an address having an input number that is a reference number or more from the addresses stored in the one or more address storage units, and a selection unit suitable for selecting an address storage unit in which an address is not stored and storing an input address in the selected address storage unit. | 06-25-2015 |
20150179231 | SEMICONDUCTOR MEMORY APPARATUS - A semiconductor memory apparatus may include a program voltage generation block configured to generate a program voltage in response to program codes; a precharge voltage generation block configured to generate a precharge voltage in response to the program codes and addresses; and a main bit line configured to be applied with the program voltage and the precharge voltage. | 06-25-2015 |
20150178192 | NONVOLATILE MEMORY DEVICE AND DATA STORAGE DEVICE INCLUDING THE SAME - A data storage device including a first nonvolatile memory device having a first state information transmission block, a second nonvolatile memory device having a second state information transmission block, which shares a state information line with the first state information transmission block, and a controller having a state information reception block which is suitable for transmitting a control signal for controlling the first state information transmission block and the second state information transmission block to transmit a state information frame, and sequentially receiving a first state information frame transmitted from the first state information transmission block and a second state information frame transmitted from the second state information transmission block, through the state information line. | 06-25-2015 |
20150178156 | MEMORY SYSTEM - A memory system is provided. The memory system includes a memory device suitable for reading out data from memory cells by a plurality of read voltages having various levels, and a controller suitable for updating probabilistic information based on the read out data when the read out data is input to the controller, and performing an error correction operation by the updated probabilistic information, wherein the controller updates the probabilistic information a predetermined number of times that the memory device reads out the data. | 06-25-2015 |
20150178153 | MEMORY SYSTEM - Provided is a memory system having a memory device. The memory system includes a memory device suitable for performing an even read operation of even memory cells connected to a word line and an odd read operation of odd memory cells connected to the word line, and a controller suitable for performing an error correction operation on even data read out from the even memory cells according to even probability information and odd data read out from the odd memory cells according to odd probability information, and the controller is configured to correct the even probability information or the odd probability information according to characteristics of the even memory cells and the odd memory cells. | 06-25-2015 |
20150178009 | DATA STORAGE DEVICE AND DATA PROCESSING SYSTEM INCLUDING THE SAME - A data processing system includes a host device including a first volatile memory device, and a data storage device including a second volatile memory device and a nonvolatile memory device, and suitable for storing data to be accessed by the host device. The data storage device uploads data stored in the second volatile memory device to the first volatile memory device before the data storage device in a normal mode enters a power-save mode. | 06-25-2015 |
20150177777 | PULSE GENERATION CIRCUIT, BURST ORDER CONTROL CIRCUIT, AND DATA OUTPUT CIRCUIT - A pulse generation circuit includes a control unit configured to activate one or more of control clocks among a plurality of control clocks, and to activate one or more of select signals among a plurality of select signals, in response to one or more of sequence signals; a plurality of shifting units each configured to generate one or more of output signals, and to sequentially activate the one or more of output signal's by shifting an input pulse when a corresponding control clock among the plurality of control clocks is activated; and a signal transfer unit configured to transfer one or more of output signals of a shifting unit corresponding to an activated select signal among the plurality of shifting units, as one or more of pulses. | 06-25-2015 |
20150177769 | VOLTAGE GENERATION CIRCUITS AND SEMICONDUCTOR DEVICES INCLUDING THE SAME - Voltage generation circuits are provided. The voltage generation circuit includes a reference voltage generator suitable for generating a reference voltage signal having a constant level without a correspondence to a temperature variation. A comparator suitable for comparing a first drivability controlled by a level of the reference voltage signal with a second drivability controlled by a level of a comparison voltage signal to generate a comparison signal. A voltage controller may be configured to generate the comparison voltage signal whose level continuously increases until the comparison signal is enabled. | 06-25-2015 |
20150177763 | INITIALIZATION SIGNAL GENERATION CIRCUITS AND SEMICONDUCTOR DEVICES INCLUDING THE SAME - The initialization signal generation circuit includes a first driver and a second driver. The first driver includes at least one passive element and drives an initialization signal while a level of an external voltage signal reaches an initial level. The second driver drives the initialization signal in response to a control signal from a point of time that a level of the external voltage signal reaches the initial level. | 06-25-2015 |
20150177320 | SEMICONDUCTOR CHIP, STACK CHIP INCLUDING THE SAME, AND TESTING METHOD THEREOF - A semiconductor chip includes an input pad and an output pad formed on the semiconductor chip; at least one bump formed on the semiconductor chip; and a test scan chain configured to output data applied from the input pad, to a node which is electrically coupled with the bump, store data corresponding to capacitance of the node by floating the node for a predetermined time, and output data corresponding to the stored capacitance, to the output pad. | 06-25-2015 |
20150162911 | OPERATION MODE SETTING CIRCUIT OF SEMICONDUCTOR APPARATUS AND DATA PROCESSING SYSTEM USING THE SAME - An operation mode setting circuit of a semiconductor apparatus includes a mode register set configured to update an operation mode information generated internally at the semiconductor apparatus based on preliminary information data in response to a preliminary information setting signal and a preliminary information providing block configured to provide the preliminary information data selected from a plurality of pre-stored preliminary information data to the mode register setting response to the preliminary information setting signal, the selected preliminary information data corresponding to a detected operation parameter detected in response to the preliminary information setting signal. | 06-11-2015 |
20150162529 | ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME - An electronic device includes a switch element. The switch element includes a first electrode including a first metal nitride which is conductive, a second electrode, a switching layer interposed between the first electrode and the second electrode, and a first barrier layer which is interposed between the first electrode and the switching layer and includes a second metal nitride which is insulative, wherein a metal in the first metal nitride is the same as a metal in the second metal nitride, and a metal-to-nitrogen bonding ratio of the first metal nitride is different from a metal-to-nitrogen bonding ratio of the second metal nitride. | 06-11-2015 |
20150162345 | SEMICONDUCTOR MEMORY DEVICE INCLUDING A SLIT - A semiconductor device includes a first conductive layer, at least one first slit through the first conductive layer, and configured to divide the first conductive layer in the unit of a memory block, second conductive layers stacked on the first conductive layer, and a second slit through the second conductive layers at a different location from the first slit and configured to divide the second conductive layers in the unit of the memory block. | 06-11-2015 |
20150162342 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a first stacked structure having first conductive layers and first insulating layers formed alternately with each other, first semiconductor patterns passing through the first stacked structure, a coupling pattern coupled to the first semiconductor patterns, and a slit passing through the first stacked structure and the coupling pattern. | 06-11-2015 |
20150162341 | NON-VOLATILE MEMORY DEVICE HAVING INCREASED MEMORY CAPACITY - A non-volatile memory device according to an embodiment of the present invention includes a first memory layer including a plurality of memory cells stacked between a first conductive line and a second conductive line over a semiconductor substrate. In addition, a second memory layer including the plurality of memory cells stacked between the second conductive line and a third conductive line. Further, the second memory layer is extended over the page buffer and the peripheral circuit sequentially arranged from the first memory layer. | 06-11-2015 |
20150162268 | ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME - An electronic device includes a semiconductor memory unit. The semiconductor memory unit includes a plurality of conductive pillars stretching in a direction perpendicular to a substrate, the plurality of conductive pillars arranged in a first direction and a second direction intersecting the first direction, conductive patterns disposed between the conductive pillars, variable resistance layers each of which is disposed between a corresponding one of the conductive pillars and a corresponding one of the conductive patterns, said each of the variable resistance layers contacting the corresponding conductive pattern and the corresponding conductive pillar, first lines disposed between the conductive pillars in the second direction and stretch in the first direction, the first lines contacting the conductive patterns under the conductive patterns, and second lines disposed between the conductive pillars in the first direction and stretch in the second direction, the second lines contacting the conductive patterns over the conductive patterns. | 06-11-2015 |
20150162263 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - The semiconductor device includes first interlayer insulating layers and first conductive patterns which are alternately stacked; a second interlayer insulating layer formed on the first interlayer insulating layers and the first conductive patterns; and a slit passing through the second interlayer insulating layer, the first interlayer insulating layers and the first conductive patterns to divide the first interlayer insulating layers and the first conductive patterns into stack structures. | 06-11-2015 |
20150162237 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a first isolation layer formed in a trench in a substrate. The isolation layer includes a first oxide layer formed in the trench and a second oxide layer formed over the first oxide layer, wherein the first oxide layer and the second oxide layer have a same composition. | 06-11-2015 |
20150162094 | SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME - A semiconductor device includes at least one first row selection line, at least one column selection line that intersects with the first row selection line, and a first fuse circuit including a first fuse array, and suitable for outputting a first fuse signal programmed in the first fuse array by using an external voltage as a source voltage in a power-up mode, wherein the first fuse array includes at least one first fuse cell coupled with the first row selection line and the column selection line. | 06-11-2015 |
20150162073 | SEMICONDUCTOR DEVICES - The semiconductor device includes a pre-internal refresh signal generator and an internal refresh signal generator. The pre-internal refresh signal generator receives a first periodic signal during a refresh operation to generate a pre-internal refresh signal including pulses which are periodically created. The internal refresh signal generator receives a second periodic signal during the refresh operation to generate first and second internal refresh signals sequentially enabled by the pulses of the pre-internal refresh signal. | 06-11-2015 |
20150162071 | ADDRESS STORAGE CIRCUIT AND MEMORY AND MEMORY SYSTEM INCLUDING THE SAME - A memory including a plurality of word lines to which one or more memory cells are coupled, an address storage unit suitable for storing an input address corresponding to a first external signal that is inputted at a random time, and a control unit suitable for activating a word line corresponding to the input address of the plurality of word lines in response to an active command and refreshing one or more target word lines selected using an address stored in the address storage unit when performing a refresh operation. | 06-11-2015 |
20150162064 | REFRESH CONTROL CIRCUIT OF SEMICONDUCTOR APPARATUS AND REFRESH METHOD USING THE SAME - A refresh control circuit of a semiconductor apparatus includes a repair address processing unit configured to compare refresh addresses and repair information, activate a redundant enable signal, and convert the semiconductor apparatus into the same operation state as an initialization state of the repair information in response to activation of a repair initialization signal; a refresh counter configured to count the refresh addresses extended to a signal bit in response to activation of a redundant count enable signal; and a refresh control unit configured to activate the repair initialization signal and the redundant count enable signal when an additional refresh mode is set in response to a refresh command. | 06-11-2015 |
20150155869 | SEMICONDUCTOR APPARATUS AND REDUCED CURRENT AND POWER CONSUMPTION - A semiconductor apparatus may include a mode control circuit configured to output differential output signals which swing in a current mode logic (CML) area and a first control signal, in response to a power-down mode signal; a first circuit unit configured to be provided with the differential output signals, and operate in a power-down mode; and a second circuit unit configured to be provided with the differential output signals, and be interrupted in its operation in the power-down mode. | 06-04-2015 |
20150155861 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR SYSTEM INCLUDING THE SAME - A semiconductor device includes a first pad suitable for receiving a first clock that is inputted from an exterior, a second pad suitable for receiving a second clock that is inputted from the exterior, a differential clock recognition unit suitable for recognizing between the first clock and the second clock as a positive clock of differential clocks and recognizing the other as a negative clock of the differential clocks in response to a mirror function signal which represents whether a mirror function is enabled or not, an output unit suitable for outputting an internal signal as an output signal in response to the differential clocks and controlling an output moment of the output signal in response to the mirror function signal and an output moment control signal, and a third pad suitable for supplying the output signal to the exterior. | 06-04-2015 |
20150155857 | FLIP-FLOP CIRCUIT AND SEMICONDUCTOR APPARATUS USING THE SAME - A flip-flop circuit may include: a latch unit configured to latch an input signal in response to a clock signal; and a timing control unit configured to delay a signal provided from the latch unit by a predetermined time regardless of the clock signal. | 06-04-2015 |
20150155482 | ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME - An electronic device includes a semiconductor memory. The semiconductor memory includes a plurality of first planes and a plurality of second planes which are disposed over a substrate and alternately stacked in a vertical direction over the substrate, where each of the first planes includes a plurality of first lines which extends in a first direction parallel to the substrate and each of the second planes includes a plurality of second lines which extends in a second direction parallel to the substrate and intersecting with the first direction, a plurality of variable resistance patterns which is interposed between each of the first planes and each of the second planes, each of the variable resistance patterns being disposed at a cross point between a first line and a corresponding second lines, and an air-gap which is disposed between neighboring variable resistance patterns. | 06-04-2015 |
20150155371 | 3-DIMENSIONAL NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A non-volatile memory device comprising a plurality of strings each including a drain select transistor, drain-side memory cells, a pipe transistor, source-side memory cells, and a source select transistor coupled in series, wherein the plurality of strings are arranged in a first direction and a second direction, and the strings arranged in the second direction form each of string columns; a plurality of bit lines extended in the second direction and coupled to the drain select transistors of the strings included in each string column; and a plurality of source lines extended in the first direction and in common coupled to the source select transistors of strings adjacent to each other in the second direction, wherein strings included in one of the string columns are staggered in the first direction and each of the string columns are coupled to at least two of the bit lines. | 06-04-2015 |
20150155360 | NON-VOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A non-volatile memory device may include a first well of a first conductive type formed over a substrate, a second well of a second conductive type formed over the substrate to contact the first well, a trench formed over the substrate on a border formed by the contact of the first well and the second well, and a memory gate having a memory layer formed over a surface of the trench, and a gate electrode formed to fill the trench over the memory layer. | 06-04-2015 |
20150155335 | VARIABLE RESISTANCE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A variable resistance memory device includes a semiconductor substrate having a vertical transistor with a shunt gate that increases an area of a gate of the vertical transistor. | 06-04-2015 |
20150155296 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is a semiconductor device including a first stacked structure in which first conductive patterns and first interlayer insulating layers are alternately stacked, a second stacked structure formed on the first stacked structure and including second conductive patterns and second interlayer insulating layers, which are alternately stacked, an interfacial pattern formed between the first stacked structure and the second stacked structure, first through-areas passing through the first stacked structure and the interfacial pattern, and including first protrusions protruding toward a sidewall of the interfacial pattern, second through-areas passing through the second stacked structure and connected to the first through-areas, and through-structures formed along sidewalls of the first through-areas and the second through-areas. | 06-04-2015 |
20150155295 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes first semiconductor patterns with protrusions formed on the sidewalls thereof, and second semiconductor patterns respectively coupled to the first semiconductor patterns and increasing in width away from joining surfaces where the first semiconductor patterns and the second semiconductor patterns are coupled. | 06-04-2015 |
20150155278 | SEMICONDUCTOR APPARATUS - A semiconductor apparatus includes a reservoir capacitor, and the reservoir capacitor includes a plurality of MOS capacitors serially coupled to one another. The plurality of MOS capacitors are arranged in one well. | 06-04-2015 |
20150155274 | SEMICONDUCTOR APPARATUS INCLUDING DUMMY PATTERNS - A semiconductor apparatus and system including a semiconductor apparatus may include: a main pattern block having a plurality of main patterns formed to be coupled to a power source and one or more dummy pattern blocks formed around the main pattern block. Any one of the one or more dummy pattern blocks may include a protection part formed to protect the main pattern block. | 06-04-2015 |
20150155180 | FINE PATTERN STRUCTURES HAVING BLOCK CO-POLYMER MATERIALS - Various embodiments are directed to fine pattern structures, such as fine pattern structures having block co-polymer materials, methods of forming fine pattern structures with block co-polymer materials, and methods of fabricating semiconductor devices including fine pattern structures with block co-polymer materials. According to some embodiments, a method of fabricating a fine pattern structure includes providing a layer of alternating protrusion portions and recess portions, forming polymer patterns in recess regions formed in the recess portions, forming brush patterns on top surfaces of the protrusion portions, forming first polymer block patterns on the brush patterns and second polymer block patterns on the polymer patterns, and removing the second polymer block patterns and the polymer patterns. | 06-04-2015 |
20150155057 | ERROR DETECTION CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT USING THE SAME - The technology may include: a first error detection operation unit configured to perform a serial error detection operation on a data signal which is inputted in sequence through each of multiple input/output pads, and to generate multiple pieces of preliminary information; and a second error detection operation unit configured to perform a parallel error detection operation on the multiple pieces of preliminary information, and to generate an error detection code. | 06-04-2015 |
20150155054 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF WAFER BURN-IN TEST FOR THE SAME - A semiconductor memory device comprising a memory cell array with a plurality of word lines, first and second dummy word lines, and a dummy word line driver suitable for separately driving the first and second dummy word lines for a wafer burn-in test where the word lines are driven by group. | 06-04-2015 |
20150155051 | SEMICONDUCTOR DEVICE HAVING FUSE CIRCUIT - A semiconductor device includes a fuse array with a plurality of fuses, a common signal generation unit suitable for receiving a power-up signal and generating an inverted power-up signal and a reset signal, a plurality of fuse registers suitable for latching a plurality of fuse data for the plurality of fuses and commonly receiving the inverted power-up signal and the reset signal from the common signal generation unit by grouped fuse registers, and an output selection unit suitable for outputting the plurality of fuse data stored on the plurality of fuse registers according to a predetermined sequence. | 06-04-2015 |
20150155047 | SEMICONDUCTOR MEMORY DEVICE AND ERASING METHOD THEREOF - Provided is a semiconductor memory device and a method of erasing the same. The semiconductor memory device includes a memory cell array including a plurality of memory cells; and a peripheral circuit unit configured to apply a pre-erase voltage, an erase voltage, and an erase operation voltage to the memory cell array so as to erase data stored in the plurality of memory cells when an erase operation is performed. The memory cell array includes a plurality of source selection transistors, the plurality of memory cells, and a plurality of drain selection transistors that are connected between a source line and a bit line. When the pre-erase voltage is applied to the source line during the erase operation, different erase operation voltages are applied to an outermost source selection transistor adjacent to the source line among the plurality of source selection transistor and the other selection transistors. | 06-04-2015 |
20150155041 | SEMICONDUCTOR MEMORY DEVICE, MEMORY SYSTEM INCLUDING THE SAME AND OPERATING METHOD THEREOF - A semiconductor memory device, a memory system including the same and an operating method thereof are set forth. The semiconductor memory device includes a memory cell array having a plurality of memory cells, peripheral circuits configured to perform a program operation using an incremental step pulse programming (ISPP) method on selected memory cells from among the plurality of memory cells. The semiconductor memory device includes an additional program using set program voltages to set memory cells, and a control logic configured to control the peripheral circuits to perform the program in the manner of the ISPP method and the additional program. | 06-04-2015 |
20150155040 | SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF - Provided are a semiconductor memory device and an operating method thereof. The semiconductor memory device includes a memory cell array including a plurality of strings, wherein each of the plurality of strings includes a first memory cell group, and a second memory cell group and peripheral circuits configured to generate a first precharge voltage applied to the first memory cell group and a second precharge voltage applied to the second memory cell group when a channel precharge operation is performed during a program operation, and generate a program voltage to apply the program voltage to the memory cell array when a program voltage application is performed. | 06-04-2015 |
20150155030 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes a first bank, a second bank disposed separately from the first bank along a first direction, a third bank disposed separately from the first bank along a second direction substantially perpendicular to the first direction, a fourth bank disposed separately from the second bank along the second direction and from the third bank along the first direction, a first row control region, which is disposed between the first bank and the second bank, suitable for controlling a row decoding operation of the first bank and the second bank, a second row control region, which is disposed between the third bank and the fourth bank, suitable for controlling a row decoding operation of the third bank and the fourth bank, and a refresh control unit suitable for controlling a refresh operation of the first to fourth banks. | 06-04-2015 |