SILTRONIC AG Patent applications |
Patent application number | Title | Published |
20150083104 | METHOD FOR SIMULTANEOUSLY CUTTING A MULTIPLICITY OF WAFERS FROM A WORKPIECE - A method for simultaneously cutting a multiplicity of wafers from a cylindrical workpiece having an axis and a notch applied parallel to the axis in a lateral surface of the workpiece includes applying a cut-in beam on the workpiece where the cut-in beam has a head end and a foot end. The head end is inserted into the notch of the workpiece. The workpiece is held with a feed device so as to position an axis of the work piece parallel to the axes of cylindrical wire guide rollers of a wire saw. The cut-in beam is moved through a planar wire web, where the planar wire web has sections of wire arranged parallel to one another and perpendicular to the axes of the wire guide roller. The wire sections are moved the longitudinal wire direction in the presence of abrasives. | 03-26-2015 |
20150040820 | METHOD FOR MANUFACTURING SINGLE-CRYSTAL SILICON - The success rate of multi-pulled single crystal growth by the Czochralski method is enhanced by the use of a melt crucible having an amount of barium on an inner surface thereof which varies inversely with the diameter of the crucible. At least one single crystal is separated from the melt by a free span method. | 02-12-2015 |
20140360425 | Method For Controlling The Diameter Of A Single Crystal To A Set Point Diameter - The diameter of a single crystal is controlled to a set point diameter during pulling of the single crystal from a melt contained in a crucible and which forms a meniscus at a phase boundary on the edge of the single crystal, the meniscus having a height which corresponds to the distance between the phase boundary and a level of the surface of the melt outside the meniscus, comprising repeatedly:
| 12-11-2014 |
20140326173 | METHOD FOR MANUFACTURING SINGLE-CRYSTAL SILICON - Single crystal silicon ingots are grown by the multi-pulling method in a single crucible with minimization of dislocations by incorporating barium as a quartz crystallization inhibitor in amounts proportional to the diameter of the Czochralski crucible in which the crystal is grown. In at least one of the crystal pulling steps, a magnetic field is applied. | 11-06-2014 |
20140308878 | METHOD FOR POLISHING SEMICONDUCTOR WAFERS BY MEANS OF SIMULTANEOUS DOUBLE-SIDE POLISHING - A method of polishing a semiconductor wafer includes simultaneous double-side polishing the wafer in a gap of a polishing device between a lower polishing plate covered with a lower polishing pad and upper polishing plate covered with an upper polishing pad while supplying a polishing agent. A first of the upper and lower polishing pads is dressed using a dressing tool. The dressing tool is mounted in the gap so that it extends from the inner edge to the outer edge of the first polishing pad. The distance between the dressing tool and a second of the upper and lower polishing pads at the inner edge of the second polishing pad differs from a corresponding distance at the outer edge of the second polishing pad. After the dressing, the at least one semiconductor wafer in the gap is polished. | 10-16-2014 |
20140287656 | METHOD FOR POLISHING A SEMICONDUCTOR MATERIAL WAFER - A method for polishing at least one semiconductor wafer while supplying a polishing agent includes performing a first simultaneous double-side polishing of the front side and the back side of the at least one semiconductor wafer with first upper and lower polishing pads, edge-notch polishing the surface of the at least one semiconductor wafer, performing a second simultaneous double-side polishing of the front side and the back side of the at least on semiconductor wafer with second upper and lower polishing pads, where the upper and lower polishing pads for the first simultaneous double-side polishing are harder and less compressible than the upper and lower polishing pads for the second simultaneous double-side polishing and performing single-side polishing of the front side of the at least one semiconductor wafer. | 09-25-2014 |
20140264776 | Semiconductor Wafer With A LayerOf AlzGa1-zN and Process For Producing It - A semiconductor wafer contains the following layers in the given order:
| 09-18-2014 |
20140235143 | METHOD FOR CONDITIONING POLISHING PADS FOR THE SIMULTANEOUS DOUBLE-SIDE POLISHING OF SEMICONDUCTOR WAFERS - A method for conditioning polishing pads for the simultaneous double-side polishing of semiconductor wafer uses a double-side polishing device. The device has an annular lower polishing plate and an annular upper polishing plate, each covered with a polishing pad, as well as a rolling device for carrier disks. The method for conditioning polishing pads includes disposing at least one conditioning tool having external teeth and at least one spacer having external teeth in a working gap formed between the first and second polishing pad, where the thickness of at least one of the conditioning tools differs from the thickness of at least one of the spacers. At least one conditioning tool and one spacer are set, simultaneously, in a revolving movement about the axis of the rolling device and in rotation themselves so as to generate material abrasion of at least one of the polishing pads. | 08-21-2014 |
20140206261 | METHOD FOR POLISHING A SEMICONDUCTOR WAFER - A method for polishing at least one wafer composed of semiconductor material that has a front side and the rear side includes performing at least one first polishing step including simultaneously polishing both front and rear sides of the at least one wafer at a process temperature between an upper polishing plate and a lower polishing plate. Each of the upper polishing and lower polishing plates is covered with a polishing pad having an inner edge and an outer edge, a hardness of at least 80° Shore A, a compressibility of less than 2.5%, and respective upper and lower surfaces that come into contact with the wafer being polished. The upper and lower surfaces form a polishing gap extending from the inner edge to the outer edge. A height of the polishing gap at the inner edge differs linearly from the height of the polishing gap at the outer edge. | 07-24-2014 |
20140170942 | METHOD AND APPARATUS FOR TRIMMING THE WORKING LAYERS OF A DOUBLE-SIDE GRINDING APPARATUS - A trimming apparatus for trimming two working layers including bonded abrasive applied on mutually facing sides of an upper and a lower working disk of a grinding apparatus configured for simultaneous double-side processing of flat workpiece includes a trimming disk, a plurality of trimming bodies and an outer toothing, where the trimming bodies are configured to release abrasive substances upon contract with the working layers so as to effect material removal from the working layers. At least 80% of the area of the trimming bodies configured to come into contact with the working layers is arranged within a ring-shaped region on the trimming disk. The width of the ring-shaped region is between 1-25% of the diameters of the trimming disk and the area of the trimming bodies which comes into contact with the working layers occupies 20-90% of the total area of the ring-shaped region. | 06-19-2014 |
20140170939 | METHOD AND APPARATUS FOR TRIMMING THE WORKING LAYERS OF A DOUBLE-SIDE GRINDING APPARATUS - A method for trimming two working layers including bonded abrasive applied on mutually facing sides of an upper and a lower working disk of a grinding apparatus configured for simultaneous double-side processing of flat workpiece includes providing at least one trimming apparatus including a trimming disk, a plurality of trimming bodies and an outer toothing. The upper and lower working disks are rotated. The trimming apparatus is moved between the rotating working disks using a rolling apparatus and the outer toothing on cycloidal paths relative to working layers of the working disks. The working layers and the trimming body are brought into contact so as to release abrasive substances from the trimming bodies and so as to effect material removal from the working layers. The direction of the drives of the grinding apparatus is changed at least twice during trimming. | 06-19-2014 |
20140144420 | METHOD FOR RESUMING A WIRE SAWING PROCESS OF A WORKPIECE AFTER AN UNPLANNED INTERRUPTION - A method resumes an interrupted process for sawing a workpiece into wafers using a wire saw that includes advancing a wire web into existing sawing kerfs of the workpiece with a forward movement of the sawing wire with a first speed in the presence of a liquid sawing medium until the wire web or workpiece has reached a position corresponding to the interruption of the wire sawing process. The sawing wire is moved in defined time intervals by a forward movement of a particular length with a second speed and a backward movement of another length with a third speed, where the backward length is less than the forward length and the forward and backward movement correspond to a cycle. The wire length that is unwound during the forward movements is increased until the length during the forward movement corresponds to the length of the forward movement before the interruption. | 05-29-2014 |
20140141613 | PROCESS FOR POLISHING A SEMICONDUCTOR WAFER, COMPRISING THE SIMULTANEOUS POLISHING OF A FRONT SIDE AND OF A REVERSE SIDE OF A SUBSTRATE WAFER - A process for polishing a semiconductor wafer includes simultaneous polishing of a front side and of a reverse side of a substrate wafer in the presence of polishing medium so as to achieve material removal from the front side and the reverse side of the substrate wafer. The simultaneous polishing includes a first step and a second step. A speed of material removal in the first step is higher than in the second step. The first step includes the use of a first polishing slurry as a polishing medium and the second step includes a second polishing slurry as the polishing medium. The second polishing slurry differs from the first polishing slurry at least in that the second polishing slurry comprises a polymeric additive. | 05-22-2014 |
20140060421 | METHOD FOR PRODUCING A SILICON SINGLE CRYSTAL - A silicon single crystal is produced by a method wherein
| 03-06-2014 |
20140048848 | LAYERED SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING IT - A layered semiconductor substrate has a monocrystalline first layer based on silicon, having a first thickness and a first lattice constant a | 02-20-2014 |
20140044945 | Semiconductor Wafer Composed Of Monocrystalline Silicon And Method For Producing It - The invention relates to a semiconductor wafer of monocrystalline silicon, and to a method for producing it. The semiconductor wafer has a zone, DZ, which is free of BMD defects and extends from a front side of the semiconductor wafer into the bulk of the semiconductor wafer, and a region having BMD defects which extends from the DZ further into the bulk of the semiconductor wafer. A silicon single crystal is pulled by the Czochralski method and processed to form a polished monocrystalline silicon substrate wafer. The substrate wafer is treated by rapidly heating and cooling the substrate wafer, slowly heating the rapidly heated and cooled substrate wafer, and keeping the substrate wafer at a specific temperature and over a specific period. | 02-13-2014 |
20130312789 | ULTRASONIC CLEANING METHOD AND ULTRASONIC CLEANING APPARATUS - An ultrasonic cleaning method for cleaning an object in a liquid in which a gas is dissolved includes preparing the liquid in which the gas is dissolved and cleaning the object while irradiating the liquid with ultrasonic waves so that a region, where a spatial rate of change of a refractive index of the liquid in which the gas is dissolved is large relative to a case where ultrasonic waves are not applied, appears along a direction in which the ultrasonic waves travel. | 11-28-2013 |
20130312788 | ULTRASONIC CLEANING METHOD AND ULTRASONIC CLEANING APPARATUS - An ultrasonic cleaning method for cleaning an object in a liquid in which a first gas is dissolved includes preparing the liquid in which the first gas is dissolved and introducing a second gas into the liquid while irradiating the liquid with ultrasonic waves so as to realize a state where bubbles containing the first gas dissolved in the liquid continue to be generated. The object is cleaned in the state where the bubbles containing the first gas continue to be generated. | 11-28-2013 |
20130312786 | ULTRASONIC CLEANING METHOD AND ULTRASONIC CLEANING APPARATUS - An ultrasonic cleaning method for cleaning an object in a liquid in which a gas is dissolved includes preparing the liquid in which the gas is dissolved. The object is cleaned while applying ultrasonic waves to the liquid so that a ratio determined by dividing a vibration strength of the liquid at a fourth-order frequency of the ultrasonic waves by a vibration strength of the liquid at a fundamental frequency of the ultrasonic waves is larger than 0.8/1000. | 11-28-2013 |
20130312785 | ULTRASONIC CLEANING METHOD AND ULTRASONIC CLEANING APPARATUS - An ultrasonic cleaning method for cleaning an object in a liquid in which a gas is dissolved includes preparing the liquid in which the gas is dissolved and stirring the liquid while irradiating the liquid with the ultrasonic waves so as to realize a state where bubbles containing the gas dissolved in the liquid continue to be generated. The object is cleaned in the state where the bubbles containing the gas continue to be generated. | 11-28-2013 |
20130277809 | METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL, SILICON SINGLE CRYSTAL, AND WAFER - P-type silicon single crystals from which wafers having high resistivity, good radial uniformity of resistivity and less variation in resistivity can be obtained, are manufactured by the Czochralski method from an initial silicon melt in which boron and phosphorus are present, the boron concentration is not higher than 4E14 atoms/cm | 10-24-2013 |
20130273719 | METHOD OF MANUFACTURING ANNEALED WAFER - Annealed wafers having reduced residual voids after annealing and reduced deterioration of TDDB characteristics of an oxide film formed on the annealed wafer, while extending the range of nitrogen concentration contained in a silicon single crystal, are prepared by a method wherein crystal pulling conditions are controlled such that a ratio V/G between a crystal pulling rate V and an average axial temperature gradient G is ≧0.9×(V/G) | 10-17-2013 |
20130263887 | DISSOLVED NITROGEN CONCENTRATION MONITORING METHOD, SUBSTRATE CLEANING METHOD, AND SUBSTRATE CLEANING APPARATUS - A dissolved nitrogen concentration monitoring method is used for monitoring a dissolved nitrogen concentration of a cleaning liquid when an ultrasonic wave is irradiated onto the cleaning liquid in which a substrate is dipped. The method includes measuring an amount of increase of a dissolved oxygen concentration of the cleaning liquid resulting from an oxygen molecule generated from a water molecule as a result of a radical reaction caused by ultrasonic wave irradiation. A dissolved nitrogen concentration of the cleaning liquid is calculated from the measured amount of increase of dissolved oxygen concentration based on a predetermined relationship between a dissolved nitrogen concentration and an amount of increase of dissolved oxygen concentration. | 10-10-2013 |
20130220216 | METHOD AND AN APPARATUS FOR GROWING A SILICON SINGLE CRYSTAL FROM A MELT - Silicon single crystals are grown from the melt by providing the melt in a crucible; imposing a horizontal magnetic field on the melt; directing a gas between the single crystal and a heat shield to a melt free surface, and controlling the gas to flow over a region of the melt free surface extending in a direction substantially perpendicular to the magnetic induction. A suitable apparatus has a crucible for holding the melt; a heat shield surrounding the silicon single crystal having a lower end which is connected to a bottom cover facing a melt free surface and a non-axisymmetric shape with respect to a crucible axis, such that gas which is directed between the crystal and the heat shield to the melt free surface is forced to flow over a region of the melt which extends substantially perpendicular to the magnetic induction. | 08-29-2013 |
20130206126 | APPARATUS AND METHOD FOR SIMULTANEOUSLY SLICING A MULTIPLICITY OF SLICES FROM A WORKPIECE - A method and apparatus are used to simultaneously slice a multiplicity of slices from a workpiece. The workpiece is held with a feed device so as to position an axis of the workpiece parallel to axes of wire guide rolls of a wire saw and is moved from above through a web of the wire saw. A slurry is supplied as abrasive to wire sections of the web while the wire sections are moved relative to the workpiece. The relative movement guides the wire sections from an entry side to an exit side through the workpiece. A coolant is sprayed from the side and below through nozzles into slicing gaps in the workpiece. The nozzles are arranged below the web parallel to the axes of the wire guide rolls. The coolant is sprayed into the slicing gaps through a nozzle situated opposite the entry side of the respective wire section. | 08-15-2013 |
20130192628 | CLEANING APPARATUS, EQUIPMENT, AND METHOD - A cleaning apparatus for cleaning an object includes a cleaning tank holding a cleaning liquid, the object being cleanable by the cleaning liquid. A coupling tank holding an intermediate medium is in contact with a portion of the cleaning tank. An ultrasonic wave generation unit is disposed at the coupling tank and configured to ultrasonically vibrate the cleaning liquid via the intermediate medium. A modification unit is configured to modify a difference in sonic velocity between the cleaning liquid and the intermediate medium. | 08-01-2013 |
20130192627 | CLEANING METHOD - A cleaning method for cleaning an object includes preparing a cleaning liquid. A dissolved nitrogen concentration in the cleaning liquid is adjusted based on a size of a foreign substance to be removed from the object with a highest removal efficiency. The object is dipped in the cleaning liquid while irradiating the cleaning liquid with ultrasonic waves. | 08-01-2013 |
20130192518 | METHOD FOR PRODUCING A SINGLE CRYSTAL OF SEMICONDUCTOR MATERIAL - A single crystal of semiconductor material is produced by a method of melting semiconductor material granules by means of a first induction heating coil on a dish with a run-off tube consisting of the semiconductor material, forming a melt of molten granules which extends from the run-off tube in the form of a melt neck and a melt waist to a phase boundary, delivering heat to the melt by means of a second induction heating coil which has an opening through which the melt neck passes, crystallizing the melt at the phase boundary, and delivering a cooling gas to the run-off tube and to the melt neck in order to control the axial position of an interface between the run-off tube and the melt neck. | 08-01-2013 |
20130189904 | METHOD FOR POLISHING A SEMICONDUCTOR WAFER - A method of polishing a semiconductor wafer using a holding system including a lined cutout the size of the semiconductor wafer that is fixed to a carrier. The method includes holding the semiconductor wafer in the cutout through adhesion of a first side of the semiconductor wafer to a bearing surface in the cutout and polishing a second side of the held semiconductor wafer using a polishing pad that is fixed on a polishing plate while introducing a polishing agent between the second side of the semiconductor wafer and the polishing pad, the polishing pad including fixedly bonded abrasive materials. The carrier is guided during polishing such that a portion of the second side of the semiconductor wafer temporarily projects beyond a lateral edge of a surface of the polishing pad. | 07-25-2013 |
20130161793 | Silicon Single Crystal Substrate and Method Of Manufacturing The Same - Silicon single crystal substrates having uniform resistance, few BMDs in a surface layer and a moderate number of BMDs in a center of thickness of the substrate are formed from Czochralski silicon single crystals. The substrates have a resistivity in the center of a first main surface not lower than 50 Ω·cm and a rate of change in resistivity in the first main surface not higher than 3%, an average density of bulk micro defects in a region between the first main surface and a plane at a depth of 50 μm of less than 1×10 | 06-27-2013 |
20130160791 | ULTRASONIC CLEANING METHOD - An ultrasonic cleaning method for cleaning an object in a solution having a gas dissolved therein includes irradiating ultrasonic waves to the solution having a first dissolved gas concentration. While the ultrasonic waves are being irradiated to the solution, a dissolved gas concentration in the solution is changed from the first dissolved gas concentration to a second dissolved gas concentration that is lower than the first dissolved gas concentration such that sonoluminescence occurs. | 06-27-2013 |
20130160698 | Method and Apparatus For Producing A Single Crystal - Single crystals are produced by means of the floating zone method, wherein the single crystal crystallizes below a melt zone at a crystallization boundary, and the emission of crystallization heat is impeded by a reflector surrounding the single crystal, wherein the single crystal is heated in the region of an outer edge of the crystallization boundary by means of a heating device in a first zone, wherein a distance Δ between an outer triple point T | 06-27-2013 |
20130157543 | Polishing Pad and Method For Polishing A Semiconductor Wafer - A semiconductor wafer is polished, wherein in a first step, the rear side of the wafer is polished by a polishing pad comprising fixedly bonded abrasives having a grain size of 0.1-1.0 μm, while supplying a polishing agent free of solid materials having a pH of at least 11.8, and, in a second step, the front side of the semiconductor wafer is polished, wherein a polishing agent having a pH of less than 11.8 is supplied. A polishing pad for use in apparatuses for polishing semiconductor wafers, has a layer containing abrasives, a layer composed of a stiff plastic and also a compliant, non-woven layer, wherein the layers are bonded to one another by means of pressure-sensitive adhesive layers. | 06-20-2013 |
20130112900 | CLEANING APPARATUS, MEASUREMENT METHOD AND CALIBRATION METHOD - A calibration method for calibrating a measurement device for measuring a concentration of a gas dissolved in a liquid includes varying the concentration of the gas dissolved in the liquid, and predetermining, as a reference concentration, a concentration of the gas at which an intensity of luminescence produced when the liquid is irradiated with ultrasonic waves shows a peak. The liquid is illuminated with ultrasonic waves while varying the concentration of the gas in the liquid and a measured value is measured, using the measurement device, as a concentration of the gas in the liquid when the intensity of the luminescence shows a peak. The measurement device is calibrated based on the measured value and the reference concentration. | 05-09-2013 |
20130093058 | P-Type Silicon Single Crystal and Method Of Manufacturing The Same - Silicon wafers having a resistivity >6 Ωcm and axially uniform resistivity are grown by the Czochralski method from a melt containing boron as the main dopant, an n-type first sub-dopant with a segregation coefficient lower than boron, and a p-type second sub-dopant with a segregation coefficient lower than the first sub-dopant. | 04-18-2013 |
20130078743 | Method and Apparatus For Depositing A Layer On A Semiconductor Wafer by Vapor Deposition In A Process Chamber - A layer is deposited onto a semiconductor wafer by CVD in a process chamber having upper and lower covers, wherein the wafer front side temperature is measured; the wafer is heated to deposition temperature; the temperature of the upper process chamber cover is controlled to a target temperature by measuring the temperature of the center of the outer surface of the upper cover as the value of a controlled variable of an upper cover temperature control loop; a gas flow rate of process gas for depositing the layer is set; and a layer is deposited on the heated wafer front side during control of the upper cover temperature to the target temperature. A process chamber suitable therefor has a sensor for measuring the upper cover outer surface center temperature and a controller for controlling this temperature to a predetermined value. | 03-28-2013 |
20130072093 | METHOD FOR THE SIMULTANEOUS DOUBLE-SIDE MATERIAL-REMOVING PROCESSING OF AT LEAST THREE WORKPIECES - A method for simultaneous double-side material-removing processing of at least three workpieces includes disposing the workpieces in a working gap between rotating upper and lower working disks of a double-side processing apparatus. The workpieces lie in freely movable fashion in respective openings in a guide cage and are moved under pressure in the working gap using the guide cage. Upon attaining a preselected target thickness of the workpieces, a deceleration process is initiated that includes reducing an angular velocity ωi(t) of a respective drive i of each of the upper working disk, lower working disk and guide cage to a standstill. The reducing is carried out such that ratios of the angular velocities ω | 03-21-2013 |
20130072091 | METHOD FOR THE DOUBLE-SIDE POLISHING OF A SEMICONDUCTOR WAFER - A method of simultaneous double-side polishing of a front side and a rear side of at least one wafer composed of semiconductor material includes disposing each wafer in a respective suitably dimensioned cutout in a carrier plate. The at least one wafer is polished on the front side and on the rear side between an upper polishing plate covered with a first polishing pad and a lower polishing plate covered with a second polishing pad while supplying a polishing agent. A respective surface of each of the first and second polishing pads is interrupted by at least one respective channel-shaped depression running spirally from a center to an edge of the respective pad. | 03-21-2013 |
20130068262 | Method For The Treatment Of A Semiconductor Wafer - Semiconductor wafers are treated in a liquid container filled at least partly with a solution containing hydrogen fluoride, such that surface oxide dissolves, are transported out of the solution along a transport direction and dried, and are then treated with an ozone-containing gas to oxidize the surface of the semiconductor wafer, wherein part of the semiconductor wafer surface comes into contact with the ozone-containing gas while another part of the surface is still in contact with the solution, and wherein the solution and the ozone-containing gas are spatially separated such that they do not come into contact with one another. | 03-21-2013 |
20130061842 | SINGLE-LAYERED WINDING OF SAWING WIRE WITH FIXEDLY BONDED ABRASIVE GRAIN FOR WIRE SAWS FOR SLICING WAFERS FROM A WORKPIECE - Wire spools used for multiple wire saws for slicing one or more wafers from a workpiece composed of semiconductor material using a wire web including parallel wire sections coated with bonded abrasive grain. The wire spools include a first wire spool configured as a dispensing spool and a second wire spool configured as a receiver spool. A sawing wire coated with bonded abrasive grain runs from the first wire spool via at least one deflection roll to the wire web and from the wire web via at least one deflection roll to the second wire spool. The sawing wire enters into guide grooves of the deflection rolls at an alignment angle α | 03-14-2013 |
20130014695 | Ring-Shaped Resistance Heater For Supplying Heat To A Growing Single CrystalAANM Knerer; DieterAACI HaimingAACO DEAAGP Knerer; Dieter Haiming DEAANM Schachinger; WernerAACI SimbachAACO DEAAGP Schachinger; Werner Simbach DE - A ring-shaped resistance heater for supplying heat to a growing single crystal, comprising: | 01-17-2013 |
20130011227 | Device and Method For Buffer-Storing A Multiplicity of Wafer-Type Workpieces - A multiplicity of wafer-type workpieces are buffer stored in a device having,
| 01-10-2013 |
20120315428 | Method For Producing Semiconductor Wafers Composed Of Silicon Having A Diameter Of At Least 450 mm, and Semiconductor Wafer Composed Of Silicon Having A Diameter of 450 mm - Silicon semiconductor wafers are produced by:
| 12-13-2012 |
20120270407 | SUSCEPTOR FOR SUPPORTING A SEMICONDUCTOR WAFER AND METHOD FOR DEPOSITING A LAYER ON A FRONT SIDE OF A SEMICONDUCTOR WAFER - A susceptor for supporting a semiconductor wafer during deposition of a layer on a front side of the semiconductor wafer, the semiconductor wafer having a diameter D and, at its edge, a notch having a depth T, comprising:
| 10-25-2012 |
20120263875 | Method and Apparatus For Depositing A Material Layer Originating From Process Gas On A Substrate Wafer - An apparatus for depositing a material layer originating from process gas on a substrate wafer, contains:
| 10-18-2012 |
20120255535 | METHOD FOR CUTTING WORKPIECE WITH WIRE SAW - A method for cutting a workpiece with a wire saw includes running at least one saw wire in a lateral direction. A first abrasive grain slurry is supplied to the saw wire on two points that are separated by a predetermined distance in a lateral direction. Cutting of the workpiece is started by moving at least one of the workpiece and the saw wire relative to the other and bringing the workpiece into contact with the saw wire from above at a location between the two points on the saw wire where the first abrasive grain slurry is supplied. A second abrasive grain slurry is supplied to a part of an area where the saw wire meshes with the workpiece. | 10-11-2012 |
20120248068 | Process Module for the Inline-Treatment of Substrates - The present invention relates to an apparatus and a method for the fluidic inline-treatment of flat substrates with at least one process module. In particular, the invention relates to such a treatment during the gentle and controlled transport of the substrates, wherein the treatment can also just relate to the transport of the substrates. | 10-04-2012 |
20120240915 | METHOD FOR SLICING WAFERS FROM A WORKPIECE - A method for slicing wafers from a workpiece includes providing wire guide rolls that each have a grooved coating with a specific thickness, providing a fixed bearing respectively associated with each wire guide roll and providing a sawing wire including wire sections disposed in a parallel fashion. The wire sections are tensioned between the wire guide rolls and are moved relative to the workpiece so as to perform a sawing operation. The wire guide rolls cooled and the fixed bearings are cooled independently of the wire guide rolls. | 09-27-2012 |
20120240914 | METHOD FOR SLICING WAFERS FROM A WORKPIECE - A method for slicing wafers from a workpiece includes providing wire guide rolls each having a grooved coating with a specific thickness and providing rings at opposing ends of a first of the coatings of a respective wire guide roll. The rings are fixed exclusively to the first coating. A sawing wire including wire sections disposed in a parallel fashion is tensioned between the wire guide rolls. The wire sections of the sawing wire are moved relative to the workpiece so as to perform a sawing operation. A change in length of the first coating, brought about by a temperature change, is measured by measuring distances between sensors and the rings. The wire guide rolls are cooled in a manner dependent on the measured distances. | 09-27-2012 |
20120190277 | INSERT CARRIER AND METHOD FOR THE SIMULTANEOUS DOUBLE-SIDE MATERIAL-REMOVING PROCESSING OF SEMICONDUCTOR WAFERS - An insert carrier is configured to receive at least one semiconductor wafer for double-side processing of the wafer between two working disks of a lapping, grinding or polishing process. The insert carrier includes a core of a first material that has a first surface and a second surface, and at least one opening configured to receive a semiconductor wafer. A coating at least partially covers the first and second surfaces of the core. The coating includes a surface remote from the core that includes a structuring including elevations and depressions. A correlation length of the elevations and depressions is in a range of 0.5 mm to 25 mm and an aspect ratio of the structuring is in a range of 0.0004 to 0.4. | 07-26-2012 |
20120189777 | METHOD FOR PROVIDING A RESPECTIVE FLAT WORKING LAYER ON EACH OF THE TWO WORKING DISKS OF A DOUBLE-SIDE PROCESSING APPARATUS - A method provides a respective flat working layer on each of two working disks of a double-side processing apparatus including a ring-shaped upper working disk, a ring shaped lower working disk and a rolling apparatus that are rotatably mounted about an axis of symmetry of the double-side processing apparatus. The method includes applying a lower intermediate layer and upper intermediate layer on respective surfaces of the lower and upper working disks. Then, simultaneous leveling of both intermediate layers is performed by moving trimming apparatuses on cycloidal paths over the intermediate layers using the rolling apparatus and the respective outer toothing under pressure and with addition of a cooling lubricant, so as to provide a material removal from the intermediate layers. A lower working layer of uniform thickness is then applied to the lower intermediate layer and an upper working layer of uniform thickness is applied to the upper intermediate layer. | 07-26-2012 |
20120178346 | METHOD FOR COOLING A WORKPIECE MADE OF SEMICONDUCTOR MATERIAL DURING WIRE SAWING - A method for cooling a cylindrical workpiece during wire sawing includes applying a liquid coolant to a surface of the workpiece. The workpiece is made of semiconductor material having a surface including two end faces and a lateral face. The method includes sawing the workpiece with a wire saw including a wire web having wire sections arranged in parallel by penetrating the wire sections into the workpiece by an oppositely directed relative movement of the wire sections and the workpiece. Wipers are disposed so as to bear on the surface of the workpiece. The temperature of the workpiece is controlled during the wire sawing using a liquid coolant applied onto the workpiece above the wipers so as to remove the liquid coolant with the wipers bearing on the workpiece surface. | 07-12-2012 |
20120160156 | Method For Recharging Raw Material Polycrystalline Silicon - A method for recharging raw material polycrystalline silicon which enables large chunks of polycrystalline silicon to be recharged to a CZ ingot growth process while preventing the CZ crucible from being damaged and restricting a decline of the dislocation free rate and the quality of the grown ingot. Polycrystalline silicon chunks are recharged by first forming cushioning layer silicon of smaller chunks. The cushioning layer of polycrystalline silicon chunks are deposited on a surface of the residual silicon melt in a crucible. Subsequently, large-sized polycrystalline silicon chunks are introduced onto the cushioning layer, the cushioning layer cushioning the impact due to dropping of the large-sized polycrystalline silicon chunks. | 06-28-2012 |
20120160154 | Method For Producing Silicon Single Crystal Ingot - An ingot production method which makes it possible to greatly restrict formation of pinholes or substantially prevent them avoids the use of substantial amounts of small-sized polycrystalline silicon chunks of polycrystalline silicon chunks, only middle-sized polycrystalline silicon chunks and large-sized polycrystalline silicon chunks. In the step of filling polycrystalline silicon, the polycrystalline silicon chunks are randomly supplied into the crucible. | 06-28-2012 |
20120156970 | METHOD FOR THE SIMULTANEOUS MATERIAL-REMOVING PROCESSING OF BOTH SIDES OF AT LEAST THREE SEMICONDUCTOR WAFERS - A method for the simultaneous material-removing processing of both sides of at least three semiconductor wafers includes providing a double-side processing apparatus including two rotating ring-shaped working disks and a rolling apparatus. The carriers are arranged in the double-side processing apparatus and the openings are disposed in the carriers so as to satisfy the inequality: | 06-21-2012 |
20120152278 | METHOD FOR CLEANING A SEMICONDUCTOR WAFER COMPOSED OF SILICON DIRECTLY AFTER A PROCESS OF POLISHING OF THE SEMICONDUCTOR WAFER - A method for cleaning a semiconductor wafer composed of silicon directly after a process of chemical mechanical polishing of the semiconductor wafer includes transferring the semiconductor wafer from a polishing plate to a first cleaning module and spraying both side surfaces of the semiconductor wafer with water at a pressure no greater than 1000 Pa at least once while transferring the semiconductor wafer. The semiconductor wafer is then cleaned between rotating rollers with water. The side surfaces of the semiconductor wafer are sprayed with an aqueous solution containing hydrogen fluoride and a surfactant at a pressure no greater than 70,000 Pa. Subsequently, the side surfaces are sprayed with water at a pressure no greater than 20,000 Pa. The wafer is then dipped into an aqueous alkaline cleaning solution, and then cleaned between rotating rollers with a supply of water. The semiconductor wafer is then sprayed with water and dried. | 06-21-2012 |
20120149198 | METHOD FOR PRODUCING A SEMICONDUCTOR WAFER - A method for producing a semiconductor wafer includes a number of steps in order including a bilateral material-removing process followed by rounding off an edge of the wafer and grinding front and back sides of the wafer by holding one side and grinding the other. The front and back are then polished with a polishing cloth including bound abrasives and subsequently treated with an etching medium to carry out a material removal of no more than 1μm on each side. The front side is then polished using a polishing cloth including bound abrasives and the back side is simultaneously polished using a polishing cloth free of abrasives while a polish with abrasives is provided. The edge is then polished followed by polishing the back with a polishing cloth including bound abrasives and simultaneously polishing the front with a cloth free of abrasives while a polish including abrasives is provided. | 06-14-2012 |
20120098100 | Support Ring For Supporting A Semiconductor Wafer Composed Of Monocrystalline Silicon During A Thermal Treatment, Method For The Thermal Treatment of Such A Semiconductor Wafer, and Thermally Treated Semiconductor Wafer Composed of Monocrystalline Silicon - A support ring for supporting a monocrystalline silicon semiconductor wafer during a thermal treatment of the semiconductor wafer has outer and inner lateral surfaces and a curved surface extending from the outer lateral surface to the inner lateral surface, this curved surface serving for the placement of the semiconductor wafer. The curved surface has a radius of curvature of not less than 6000 mm and not more than 9000 mm for 300 mm diameter wafers, or a radius of curvature of not less than 9000 mm and not more than 14,000 mm for 450 mm diameter wafers. Use of the support ring during thermal treatment reduces slip and improves wafer nanotopography. | 04-26-2012 |
20120039786 | Silicon Wafer and Method For Producing It - Silicon wafers having an oxygen concentration of 5·10 | 02-16-2012 |
20120032229 | Silicon Wafer And Production Method Thereof - A silicon wafer contains: a silicon substrate; a first epitaxial layer on the silicon wafer, wherein the absolute value of the difference between donor and acceptor concentrations is ≧1×10 | 02-09-2012 |
20120031323 | Silicon Single Crystal Production Method - Silicon single crystals having suppressed deformation and dislocations and the successful omission of the tail section are produced by growing the straight-body section of the silicon single crystal under the influence of a horizontal magnetic field with a magnetic flux density at its magnetic center being ≧1000 Gauss, and ≦2000 Gauss, reducing the lifting speed of the silicon single crystal relative to the surface of the melt to 0 mm/minute, maintaining a static state until there is a decrease in the apparent weight of the silicon single crystal, then further maintaining the static state so that the entire growth front of the silicon single crystal forms a convex shape protruding in a direction opposite to the lifting direction of the silicon single crystal, and separating the silicon single crystal from the melt. | 02-09-2012 |
20120028546 | METHOD AND APPARATUS FOR TRIMMING THE WORKING LAYERS OF A DOUBLE-SIDE GRINDING APPARATUS - A method for trimming two working layers including bonded abrasive applied on mutually facing sides of an upper and a lower working disk of a grinding apparatus configured for simultaneous double-side processing of flat workpiece includes providing the grinding apparatus including the upper and lower working disks and providing at least one carrier including an outer toothing. The upper and lower working disks are rotated. The carrier is moved between the rotating working disks using a rolling apparatus and the outer toothing on cycloidal paths relative to working layers of the working disks. Loose abrasives are added to a working gap formed between the working layers. A carrier, without workpieces inserted therein, is moved in the working gap so as to effect material removal from the working layers. | 02-02-2012 |
20120007978 | Method and Apparatus For Examining A Semiconductor Wafer - The edges of semiconductor wafers are examined by an imaging method and the positions and forms of defects on the edge are determined, and in addition, a ring-shaped region on the flat area of the semiconductor wafer, the outer margin of which is ≦10 mm from the edge, is examined by means of photoelastic stress measurement and the positions of stressed regions in the ring-shaped region are determined, wherein the positions of the defects and the positions of the stressed regions are compared with one another, and the defects are classified in classes on the basis of their form and the results of the photoelastic stress measurement. | 01-12-2012 |
20110318546 | Monocrystalline Semiconductor Wafer Comprising Defect-Reduced Regions and Method For Producing It - Monocrystalline semiconductor wafers have defect-reduced regions, the defect-reduced regions having a density of GOI-relevant defects within the range of 0/cm | 12-29-2011 |
20110316128 | Semiconductor Wafers Of Silicon and Method For Their Production - Semiconductor wafers of silicon are produced by pulling a single crystal growing on a phase boundary from a melt contained in a crucible and cutting of semiconductor wafers therefrom, wherein during pulling of the single crystal, heat is delivered to a center of the phase boundary and a radial profile of a ratio V/G from the center to an edge of the phase boundary is controlled, G being the temperature gradient perpendicular to the phase boundary and V being the pull rate. The radial profile of the ratio V/G is controlled so that the effect of thermomechanical stress in the single crystal adjoining the phase boundary, is compensated with respect to creation of intrinsic point defects. The invention also relates to defect-free semiconductor wafers of silicon, which can be produced economically by this method. | 12-29-2011 |
20110316003 | Multilayered Semiconductor Wafer and Process For Manufacturing The Same - Silicon carbide substrate wafers are prepared by transferring a monocrystalline silicon layer from a donor wafer onto a handle wafer, the silicon layer being implanted with carbon and annealed to form a monocrystalline SiC layer prior to or after transfer of the silicon layer. | 12-29-2011 |
20110304081 | Method For Producing Semiconductor Wafers Composed Of Silicon - Silicon semiconductor wafers are produced by pulling a single crystal at a seed crystal from a melt heated in a crucible; supplying heat to the center of the crucible bottom with a heating power which, in the course of the growth of a cylindrical section of the single crystal, is increased at least once to not less than 2 kW and is then decreased again; and slicing semiconductor wafers from the pulled single crystal. | 12-15-2011 |
20110265940 | METHOD FOR PRODUCING A MULTIPLICITY OF SEMICONDUCTOR WAFERS BY PROCESSING A SINGLE CRYSTAL - A method for producing a plurality of semiconductor wafers includes processing a single crystal. The single crystal is provided in a grown state and has a central longitudinal axis with an orientation that deviates from a sought orientation of a crystal lattice of the semiconductor wafers. A block is sliced from the single crystal along cutting planes perpendicular to a crystallographic axis corresponding to the sought orientation of the crystal lattice of the semiconductor wafers. A lateral surface of the block is ground around the crystallographic axis. A plurality of semiconductor wafers are then sliced from the ground block along cutting planes perpendicular to the crystallographic axis. | 11-03-2011 |
20110244762 | METHOD FOR THE DOUBLE-SIDE POLISHING OF A SEMICONDUCTOR WAFER - A method for double-side polishing of a semiconductor wafer includes situating the semiconductor wafer in a cutout of a carrier that is disposed in a working gap between an upper polishing plate covered by a first polishing pad and a lower polishing plate covered by a second polishing pad. The first and second polishing pads each include tiled square segments that are formed by an arrangement of channels on the pads, where the square segments of the first pad are larger than the segments of the second pad. The square segments of the polishing pads include abrasives. During polishing, the carrier is guided such that a portion of the wafer temporarily projects laterally outside of the working gap. A polishing agent with a pH that is variable is supplied during polishing at a pH in a range of 11 to 12.5 during a first step and at a pH of at least 13 during a second step. | 10-06-2011 |
20110244760 | METHOD FOR POLISHING A SEMICONDUCTOR WAFER - A method of polishing a semiconductor wafer includes applying a polishing pad to the semiconductor wafer so as to subject the semiconductor wafer to a polishing process and supplying an aqueous polishing agent solution between the polishing pad and the semiconductor wafer. The polishing pad includes fixedly bonded abrasives of SiO | 10-06-2011 |
20110223841 | METHOD FOR POLISHING A SEMICONDUCTOR WAFER - A method of polishing a semiconductor wafer includes polishing a surface of the semiconductor wafer using a polishing pad while supplying a polishing agent slurry containing abrasives during a first step. The polishing pad is free of abrasives and includes a first surface that contacts the semiconductor wafer, the first surface having a surface structure including elevations. Supply of polishing agent slurry is subsequently ended and, in a second step, the surface of the semiconductor wafer is polished using the polishing pad while supplying a polishing agent solution having a pH value of at least 12 that is free of solids. | 09-15-2011 |
20110195251 | Method For Pulling A Single Crystal Composed Of Silicon From A Melt Contained In A Crucible, and Single Crystal Produced Thereby - Silicon single crystals are pulled from a melt in a crucible, the single crystal surrounded by a heat shield, the lower end of which is a distance h from the melt surface, wherein gas flows downward between the single crystal and the heat shield, outward between the lower end of the heat shield and the melt, and then upward in the region outside the heat shield. The internal diameter of the heat shield at its lower end is 55 mm or more than the diameter of the single crystal, and the radial width of the heat shield at its lower end is not more than 20% of the diameter of the single crystal. Highly doped single crystals pulled accordingly have a void concentration ≦50 m | 08-11-2011 |
20110192388 | METHOD FOR SLICING A MULTIPLICITY OF WAFERS FROM A CRYSTAL COMPOSED OF SEMICONDUCTOR MATERIAL - A method for slicing a plurality of wafers from a crystal includes providing a crystal of semiconductor material having a longitudinal axis, a cross section and at least one pulling edge. The crystal is fixed on a table and guided through a wire gang defined by sawing wire so as to form the wafers. The guiding is provided by a relative movement between the table and the wire gang such that entry sawing or exit sawing using the sawing wire occurs in a vicinity of the at least one pulling edge of the crystal. | 08-11-2011 |
20110192342 | Method Of Manufacturing Dislocation-Free Single-Crystal Silicon By Czochralski Method - Dislocation-free single-crystal silicon is manufactured by the Czochralski method, wherein silicon which does not contain particles with an average particle diameter smaller than 250 μm, is used as raw material for melting. | 08-11-2011 |
20110189842 | Method For Producing A Semiconductor Wafer Composed Of Silicon With An Epitaxially Deposited Layer - Semiconductor wafers composed of silicon with an epitaxially deposited layer, are prepared by:
| 08-04-2011 |
20110185963 | Method For Producing A Single Crystal Composed Of Silicon Using Molten Granules - Silicon single crystals are prepared from molten granules, by | 08-04-2011 |
20110183582 | METHOD FOR PRODUCING A SEMICONDUCTOR WAFER - A method of producing a semiconductor wafer includes a plurality of steps carried out in the following order. Simultaneous double-side material-removal processing is carried out on a semiconductor wafer sliced from a single crystal by processing the semiconductor wafer between two rotating ring-shaped working disks. Each working disk includes first abrasives having an average grain size in a range of 5.0 to 20.0 μm. Both sides of the semiconductor wafer are treated with an alkaline medium. Grinding of the front and rear sides of the semiconductor wafer is carried out. For the grinding of each side a first side is held using a wafer holder and the other side is processed using a grinding tool. The grinding tool includes second abrasives having an average grain size that is smaller than the average grain size of the first abrasives and having an average grain size being in a range of 1.0 to 10.0 μm. Both sides are polished using a polishing pad including third abrasives having an average grain size in a range of 0.1 to 1.0 μm. The front side is polished using a stock removal polishing pad that is free of abrasives and a polishing agent containing fourth abrasives. The front side is then chemical mechanical polished. | 07-28-2011 |
20110175202 | Method For Producing Semiconductor Wafers Composed Of Silicon Having A Diameter Of At Least 450 mm, and Semiconductor Wafer Composed Of Silicon Having A Diameter of 450 mm - Silicon semiconductor wafers are produced by:
| 07-21-2011 |
20110156222 | Silicon Wafer and Manufacturing Method Thereof - Silicon wafers, are manufactured with which a desired strength and electric resistance of a semiconductor device can be obtained. A non-oxidizing heat treatment for oxygen out-diffusion is performed wherein the desired amount of oxygen is discharged from the surface layer of the silicon substrate. By this heat treatment for oxygen out-diffusion, a surface layer having a low oxygen content is formed on the silicon substrate, the heat treatment of the silicon substrate being performed through an oxide film. | 06-30-2011 |
20110156216 | Silicon Wafer and Method For Producing The Same - Silicon wafers doped with nitrogen, hydrogen and carbon, have a plurality of voids, wherein 50% or more of the total number of voids are bubble-like shaped aggregates of voids;
| 06-30-2011 |
20110156215 | Silicone Wafer and Production Method Therefor - A silicon wafer includes BMDs with a diagonal length of from 10 nm to 50 nm, and has a density of BMD which exists at a depth of 50 μm and deeper from the surface of the silicon wafer which is greater than or equal to 1×10 | 06-30-2011 |
20110151650 | SEMICONDUCTOR LAYER STRUCTURE AND METHOD FOR FABRICATING A SEMICONDUCTOR LAYER STRUCTURE - Semiconductor layer structure and a method for producing a structure are provided, including a substrate made of semiconductor material, on which a layer made of a second semiconductor material is situated, furthermore a region ( | 06-23-2011 |
20110139064 | Graphite Crucible and Silicon Single Crystal Manufacturing Apparatus - A graphite crucible for silicon single crystal manufacturing by the Czochralski method, having a long life cycle, contains at least one gas venting hole provided in a corner portion of the crucible. Gas generated by reaction between the graphite crucible and a quartz crucible is released to the outside through the gas venting hole, and formation of SiC on the surface of the graphite crucible and deformation of the quartz crucible caused by the pressure of the generated gas are prevented. | 06-16-2011 |
20110133314 | METHOD FOR PRODUCING A SEMICONDUCTOR WAFER - A method for producing a semiconductor wafer includes pulling a single crystal of semiconductor material, slicing a semiconductor wafer from the single crystal and polishing the semiconductor wafer with the polishing pad and polishing agent. The polishing agent is free of solid materials having abrasive action and the polishing pad contains fixedly bonded solid materials with abrasive action. During polishing the polishing agent is supplied in a gap between the semiconductor wafer and polishing pad. The polishing agent has a pH value in a range of 9.5 to 12.5. | 06-09-2011 |
20110126757 | Method For Pulling A Single Crystal Composed Of Silicon With A Section Having A Diameter That Remains Constant - Single crystal composed of silicon with a section having a diameter that remains constant, are pulled by a method wherein the single crystal is pulled with a predefined pulling rate v | 06-02-2011 |
20110111677 | METHOD FOR POLISHING A SEMICONDUCTOR WAFER - A method for polishing a semiconductor wafer having a first side and a second side, the method includes polishing the first side using a Fixed Abrasive Polishing (FAP) with a polishing pad including fixedly bonded abrasives having an average particle size of 0.1-1.0 μm; applying a cement layer with a thickness of at most 3 μm to the polished first side; fixing the polished and cemented first side on a carrier plate of a polishing machine; and polishing the second side using a single-side chemical mechanical polishing. | 05-12-2011 |
20110107960 | Method For Producing A Single Crystal Composed Of Silicon By Remelting Granules - Silicon single crystals are grown by a method of remelting silicon granules, by crystallizing a conically extended section of the single crystal with the aid of an induction heating coil arranged below a rotating plate composed of silicon; feeding inductively melted silicon through a conical tube in the plate, the tube enclosing a central opening of the plate and extending below the plate, to a melt situated on the conically extended section of the single crystal in contact with a tube end of the conical tube, wherein by means of the induction heating coil below the plate, sufficient energy is provided to ensure that the external diameter of the tube end is not smaller than 15 mm as long as the conically extended section of the single crystal has a diameter of 15 to 30 mm. | 05-12-2011 |
20110104904 | METHOD OF PROCESSING SILICON WAFER - A method of processing a silicon wafer including sequentially carrying out the steps of (1) preparing a lapped semiconductor silicon wafer, (2) cleaning the wafer with a surfactant, (3) cleaning the wafer with alkali or acid, and (4) etching the wafer with high-purity sodium hydroxide. | 05-05-2011 |
20110097975 | METHOD FOR PRODUCING A SEMICONDUCTOR WAFER - A method for producing a semiconductor wafer sliced from a single crystal includes rounding an edge using a grinding disk containing abrasives with an average grain size of 20.0-60.0 μm. A first simultaneous double-side material-removing process is performed wherein the semiconductor wafers are processed between two rotating ring-shaped working disks, each working disk having a working layer containing abrasives having an average grain size of 5.0-20.0 μm, wherein the semiconductor wafer is placed in a cutout in one of a plurality of carriers rotatable by a rolling apparatus such that the semiconductor wafer lies in a freely movable manner in the carrier and the wafer is movable on a cycloidal trajectory. A second simultaneous double-side material-removing process is performed including processing the semiconductor wafers between two rotating ring-shaped working disks, each working disk having a working layer containing abrasives having an average grain size of 0.5-15.0 μm. | 04-28-2011 |
20110097974 | METHOD FOR POLISHING A SEMICONDUCTOR WAFER - A method of polishing a semiconductor wafer using a holding system including a lined cutout the size of the semiconductor wafer that is fixed to a carrier. The method includes holding the semiconductor wafer in the cutout through adhesion of a first side of the semiconductor wafer to a bearing surface in the cutout and polishing a second side of the held semiconductor wafer using a polishing pad that is fixed on a polishing plate while introducing a polishing agent between the second side of the semiconductor wafer and the polishing pad, the polishing pad including fixedly bonded abrasive materials. The carrier is guided during polishing such that a portion of the second side of the semiconductor wafer temporarily projects beyond a lateral edge of a surface of the polishing pad. | 04-28-2011 |
20110095018 | Device For Producing A Single Crystal Composed Of Silicon By Remelting Granules - A device for producing a silicon single crystal by remelting granules has a rotating plate of silicon having a central opening and having a silicon tubular extension which encloses the opening and extends below the plate; a first induction heating coil above the plate for melting granules; and a second induction heating coil below the plate for crystallizing the molten granules, wherein the second induction heating coil has, on its side lying opposite the silicon plate, a lower layer composed of a magnetically permeable material and an upper layer in which there is at least one cooling channel for conducting a coolant. | 04-28-2011 |
20110084366 | Epitaxial Wafer and Production Method Thereof - The epitaxial layer defects generated from voids of a silicon substrate wafer containing added hydrogen are suppressed by a method for producing an epitaxial wafer by: | 04-14-2011 |
20110081840 | METHOD FOR POLISHING SEMICONDUCTOR WAFERS - A method for polishing a plurality of semiconductor wafers includes providing a polishing pad containing an abrasive substance bonded in the polishing pad; providing an alkaline polishing agent at a volumetric flowrate greater than or equal to 5 liters/min.; polishing the plurality of semiconductor wafers using the polishing pad; and circulating the polishing agent in a polishing agent circuit during the polishing. | 04-07-2011 |
20110081836 | METHOD FOR GRINDING A SEMICONDUCTOR WAFER - A method for processing a semiconductor wafer includes bringing at least one grinding tool in contact with the semiconductor wafer; removing material from the semiconductor wafer using the grinding tool; disposing a liquid medium having a viscosity of at least 3×10 | 04-07-2011 |
20110073041 | Epitaxially Coated Semiconductor Wafer and Device and Method For Producing An Epitaxially Coated Semiconductor Wafer - In a method for producing epitaxially coated semiconductor wafers, a multiplicity of prepared, front side-polished semiconductor wafers are successively coated individually with an epitaxial layer on their polished front sides at temperatures of 800-1200° C. in a reactor, while supporting the prepared semiconductor wafer over a susceptor having a gas-permeable structure, on a ring placed on the susceptor which acts as a thermal buffer between the susceptor and the supported semiconductor wafer, the semiconductor wafer resting on the ring, and its backside facing but not contacting the susceptor, so that gaseous substances are delivered from a region over the backside of the semiconductor wafer by gas diffusion through the susceptor into a region over the backside of the susceptor, the semiconductor wafer contacting the ring only in an edge region of its backside, wherein no stresses measurable by means of photoelastic stress measurement (“SIRD”) occur in the semiconductor wafer. | 03-31-2011 |
20110039411 | Method For Producing A Polished Semiconductor Wafer - A polished semiconductor wafer of high flatness is produced by the following ordered steps:
| 02-17-2011 |
20100330885 | Method For Polishing The Edge Of A Semiconductor Wafer - A method for polishing the edge of a semiconductor wafer comprises (a) providing a semiconductor wafer which has been polished on its side surfaces and which has a rounded edge; (b) polishing the edge of the wafer by fixing the semiconductor wafer on a centrally rotating chuck, delivering the wafer to a centrally rotating polishing drum, which is inclined with respect to the chuck and to which a polishing pad containing fixedly bonded abrasives is applied, and pressing semiconductor wafer and polishing drum onto one another while a polishing agent solution containing no solids is continuously supplied. | 12-30-2010 |
20100330883 | Method For The Local Polishing Of A Semiconductor Wafer - The edge region of one side of a semiconductor wafer is polished by pressing the wafer by means of a rotatable polishing head against a polishing pad lying on a rotating polishing plate, and containing fixed abrasive. The polishing head is provided with a resilient membrane radially subdivided into a plurality of chambers by gas or liquid cushions, the polishing pressure independently selectable for each chamber. The wafer is held in position during polishing by a retainer ring pressed against the polishing pad with an application pressure, a polishing agent is introduced between the wafer and the polishing pad, and the polishing pressure exerted on the wafer in a chamber lying in the edge region of the wafer of the polishing head, and the application pressure of the retainer ring, are selected so that material is essentially removed only at the edge of the wafer. | 12-30-2010 |
20100330882 | Polishing Pad and Method For Polishing A Semiconductor Wafer - A semiconductor wafer is polished, wherein in a first step, the rear side of the wafer is polished by a polishing pad comprising fixedly bonded abrasives having a grain size of 0.1-1.0 μm, while supplying a polishing agent free of solid materials having a pH of at least 11.8, and, in a second step, the front side of the semiconductor wafer is polished, wherein a polishing agent having a pH of less than 11.8 is supplied. A polishing pad for use in apparatuses for polishing semiconductor wafers, has a layer containing abrasives, a layer composed of a stiff plastic and also a compliant, non-woven layer, wherein the layers are bonded to one another by means of pressure-sensitive adhesive layers. | 12-30-2010 |
20100330881 | Method For The Double Sided Polishing Of A Semiconductor Wafer - Semiconductor wafers are double sided polished by a method of polishing a frontside of the wafer in a first step with a polishing pad with fixed abrasive and simultaneously polishing a backside of the wafer with a polishing pad containing no abrasive, but during which an abrasive polishing agent is introduced between the polishing pad and the backside of the wafer, inverting the wafer, and then in a second step polishing the backside of the wafer with a polishing pad containing fixed abrasive and simultaneously polishing the frontside of the wafer with a polishing pad containing no fixed abrasive, a polishing agent containing abrasive being introduced between the polishing pad and the frontside of the semiconductor wafer. | 12-30-2010 |
20100330786 | Method For Producing An Epitaxially Coated Semiconductor Wafer - Epitaxially coated semiconductor wafers are produced by minimally the following steps in the order specified: (a) depositing an epitaxial layer on one side of a semiconductor wafer; (b) first polishing the epitaxially coated side of the semiconductor wafer with a polishing pad with fixed abrasive while supplying a polishing solution which is free of solids; (c) CMP polishing of the epitaxially coated side of the semiconductor wafer with a soft polishing pad which contains no fixed abrasive, while supplying a polishing agent suspension; (d) depositing another epitaxial layer on the previously epitaxially coated and polished side of the semiconductor wafer. | 12-30-2010 |
20100327414 | Method For Producing A Semiconductor Wafer - Semiconductor wafers are produced by a process of:
| 12-30-2010 |
20100323585 | Method For Chemically Grinding A Semiconductor Wafer On Both Sides - A semiconductor wafer processed on both sides simultaneously, the wafer lying in freely movable fashion in a cutout in one of a plurality of carriers that rotate by means of a rolling apparatus, and one thereby being moved on a cycloidal trajectory, the semiconductor wafer being processed in material-removing fashion between two rotating ring-shaped working disks, wherein each working disk comprises a working layer comprising abrasive material, and wherein an alkaline medium comprising no abrasive material is supplied during the processing. | 12-23-2010 |
20100316551 | Method For Pulling A Silicon Single Crystal - The invention relates to a method for pulling a silicon single crystal from a melt which is contained in a crucible, comprising immersion of a seed crystal into the melt; crystallization of the single crystal on the seed crystal by raising the seed crystal from the melt with a crystal pull speed; widening the diameter of the single crystal to a setpoint diameter in a conical section, comprising control of the crystal pull speed in such a way as to induce a curvature inversion of a growth front of the single crystal in the conical section. | 12-16-2010 |
20100294197 | Methods For Producing Epitaxially Coated Silicon Wafers - Epitaxially coated silicon wafers are produced by placing a wafer polished on its front side on a susceptor in an epitaxy reactor, first pretreating under a hydrogen atmosphere and in a second and a third step with addition of an etching medium to the hydrogen atmosphere, and subsequently providing an epitaxial layer, wherein during the first and second steps the hydrogen flow rate is 20-100 slm, during the second and third steps the flow rate of the etching medium is 0.5-1.5 slm, during the second step the average temperature in the reactor chamber is 950-1050° C., and the power of heating elements above and below the susceptor is regulated such that there is a temperature difference of 5-30° C. between a radially symmetrical region encompassing the central axis of and a part lying outside this region; and during the third step the hydrogen flow rate is reduced to 0.5-10 slm. In a second method, during the third pretreatment step the flow rate of the etching medium is increased to 1.5-5 slm, while the hydrogen flow rate does not have to be reduced. | 11-25-2010 |
20100291761 | Method For Producing A Wafer Comprising A Silicon Single Crystal Substrate Having A Front And A Back Side And A Layer of SiGe Deposited On The Front Side - A method for producing a wafer with a silicon single crystal substrate having a front and a back side and a layer of SiGe deposited on the front side, the method using steps in the following order:
| 11-18-2010 |
20100291756 | METHOD FOR THE PRODUCTION OF A SEMICONDUCTOR STRUCTURE - Semiconductor structures are produced by providing a 3C—SiC semiconductor layer containing a monocrystalline 3C—SiC layer by implantation of carbon in silicon on a first silicon substrate and applying an epitaxial layer of nitride compound semiconductor suitable for the generation of optoelectronic components onto the 3C—SiC semiconductor layer structure, wherein the epitaxial layer of nitride semiconductor is transferred onto a second substrate by bonding the nitride layer onto the second substrate surface and mechanically or chemically removing silicon and layers containing SiC, the second substrate being a metal with a reflectivity ≧80% or being substantially transparent. | 11-18-2010 |
20100288185 | Method And An Apparatus For Growing A Silicon Single Crystal From A Melt - Silicon single crystals are grown from the melt by providing the melt in a crucible; imposing a horizontal magnetic field on the melt; directing a gas between the single crystal and a heat shield to a melt free surface, and controlling the gas to flow over a region of the melt free surface extending in a direction substantially perpendicular to the magnetic induction. A suitable apparatus has a crucible for holding the melt; a heat shield surrounding the silicon single crystal having a lower end which is connected to a bottom cover facing a melt free surface and a non-axisymmetric shape with respect to a crucible axis, such that gas which is directed between the crystal and the heat shield to the melt free surface is forced to flow over a region of the melt which extends substantially perpendicular to the magnetic induction. | 11-18-2010 |
20100237474 | Unpolished Semiconductor Wafer and Method For Producing An Unpolished Semiconductor Wafer - Unpolished semiconductor wafers are produced by: (a) pulling a single crystal of a semiconductor material, (b) grinding the single crystal round, (c) separating a semiconductor wafer from this crystal, (d) rounding the edge of the semiconductor wafer, (e) surface-grinding at least one side of the semiconductor wafer, (f) treating the semiconductor wafer with an etchant, and (g) cleaning the semiconductor wafer. The unpolished semiconductor wafers have, on at least the front side, a reflectivity of 95% or more, a surface roughness of 3 nm or less, have a thickness of 80-2500 μm, an overall planarity value GBIR of 5 μm or less with an edge exclusion of 3 mm and a photolithographic resolution of at least 0.8 μm, and which furthermore contain a native oxide layer with a thickness of 0.5-3 nm on both sides. | 09-23-2010 |
20100224964 | Epitaxially coated silicon wafer and method for producing an epitaxially coated silicon wafer - Epitaxially coated silicon wafers have a rounded and polished edge region and a region adjacent to the edge having a width of 3 mm on the front and rear sides, a surface roughness in edge region of 0.1-1.5 nm RMS relative to a spatial wavelength range of 10-80 μm, and a variation of surface roughness of 1-10%. The wafer edges, after polishing, are examined for defects and roughness at the edge and surrounding region. Silicon wafers having a surface roughness of less than 1 nm RMS are pretreated in single wafer epitaxy reactors, first in a hydrogen atmosphere at a flow rate of 1-100 slm and in a second step, an etching medium with a flow rate of 0.5-5 slm is conducted onto the edge region of the wafer by a gas distribution device. The wafer is then epitaxially coated. | 09-09-2010 |
20100221869 | Semiconductor Wafer and Process For Its Production - A layered semiconductor wafer contains the following layers in the given order:
| 09-02-2010 |
20100216261 | METHOD FOR IDENTIFYING AN INCORRECT POSITION OF A SEMICONDUCTOR WAFER DURING A THERMAL TREATMENT - An incorrect position of a semiconductor wafer during thermal treatment in a process chamber heated by means of infrared emitters and transmissive to infrared radiation is identified, wherein the semiconductor wafer lies in a circular pocket of a rotating susceptor and is held at a predetermined temperature with the aid of the infrared emitters and a control system, and wherein thermal radiation is measured by a pyrometer, an amplitude of the fluctuations of the measurement signal is determined and an incorrect position of the semiconductor wafer is assumed if the amplitude exceeds a predetermined maximum value. The pyrometer is oriented such that the measurement spot detected by the pyrometer lies partly on the semiconductor wafer and partly outside the semiconductor wafer on the susceptor so that it is possible to identify an eccentric position of the semiconductor wafer within the pocket of the susceptor. | 08-26-2010 |
20100213168 | Method For Producing Epitaxially Coated Silicon Wafers - Epitaxially coated silicon wafers, are coated individually in an epitaxy reactor by a procedure in which a silicon wafer on a susceptor in the epitaxy reactor, is pretreated in a first step with a hydrogen flow rate of 1-100 slm and in a second step with hydrogen and an etching medium at a hydrogen flow rate of 1-100 slm, and an etching medium flow rate of 0.5-1.5 slm, at an average temperature of 950-1050° C., and is subsequently coated epitaxially, wherein, during the second pretreatment step, the power of heating elements is regulated such that there is a temperature difference of 5-30° C. between a radially symmetrical central region of the silicon wafer and an outer region of the silicon outside the central region. | 08-26-2010 |
20100176491 | Epitaxially Coated Silicon Wafer and Method For Producing Epitaxially Coated Silicon Wafers - Silicon wafers polished on their front sides are individually placed on a susceptor in an epitaxy reactor and firstly pretreated under a hydrogen atmosphere, and secondly with addition of an etching medium with a flow rate of 1.5-5 slm to the hydrogen atmosphere, the hydrogen flow rate being 1-100 slm in both steps, and subsequently epitaxially coated on the polished front side, and then removed from the reactor. In a second method, gas flows introduced into the reactor by injectors are distributed into outer and inner zones of the chamber, such that the inner zone gas flow acts on a wafer central region and the outer zone gas flow acts on a wafer edge region, the inner/outer distribution of the etching medium I/O=0-0.75. Silicon wafers having an epitaxial layer having global flatness value GBIR of 0.02-0.06 μm, relative to an edge exclusion of 2 mm are produced. | 07-15-2010 |
20100164071 | Silicon wafer and method for producing the same - Silicon wafers having excellent voltage resistance characteristics of an oxide film and high C-mode characteristics are derived from single crystal silicon ingots doped with nitrogen and hydrogen, characterized in that a plurality of voids constituting a bubble-like void aggregates are present ≧50% relative to total voids; a V1 region having a void density of over 2×10 | 07-01-2010 |
20100163807 | Silicon Wafer and Method Of Manufacturing The Same - A silicon wafer in which both occurrences of slip dislocation and warpage are suppressed in device manufacturing processes is a silicon wafer having BMDs having an octahedral shape, wherein BMDs located at a position below the silicon wafer surface to a depth of 20 μm and having a diagonal length of 200 nm or more are present at a concentration of ≦2×10 | 07-01-2010 |
20100163084 | Micro Bubble Generating Device and Silicon Wafer Cleaning Apparatus - A micro-bubble generating device is provided with a micro-bubble generating mechanism and a leading conduit provided with a widening section and a tube part, the widening section and the tube part in communication with each other in the leading conduit. The widening section has a hollow shape which has an axis Z as a central axis, and has base surfaces and a peripheral surface, and communicates with a nozzle of the micro-bubble-generating mechanism via one base surface of the widening section, and communicates with the tube part via the other base surface. The cross section orthogonal to a flow axis Z of the micro-bubbles of the widening section is larger than the cross section orthogonal to the flow axis Z of the tube part. | 07-01-2010 |
20100158783 | Process and Apparatus for Producing a Single Crystal of Semiconductor Material - A process for producing a single crystal of semiconductor material, in which fractions of a melt, are kept in liquid form by a pulling coil, solidify on a seed crystal to form the growing single crystal, and granules are melted in order to maintain the growth of the single crystal. The melting granules are passed to the melt after a delay. There is also an apparatus which Is suitable for carrying out the process and has a device which delays mixing of the molten granules and of the melt. | 06-24-2010 |
20100155903 | Annealed wafer and method for producing annealed wafer - An annealed wafer having enhanced gettering effects for Cu is produced by heating a silicon substrate containing a nitrogen concentration of 5×10 | 06-24-2010 |
20100139711 | Cleaning method of semiconductor wafer - A wax removal method uniformly removes wax adhering to a wafer surface and reduces the problems of re-adhesion of particles and filter clogging of a cleaning bath during cleaning. The method uses cleaning liquid which contains microbubbles. | 06-10-2010 |
20100139706 | Method For The Treatment Of A Semiconductor Wafer - Semiconductor wafers are treated in a liquid container filled at least partly with a solution containing hydrogen fluoride, such that surface oxide dissolves, are transported out of the solution along a transport direction and dried, and are then treated with an ozone-containing gas to oxidize the surface of the semiconductor wafer, wherein part of the semiconductor wafer surface comes into contact with the ozone-containing gas while another part of the surface is still in contact with the solution, and wherein the solution and the ozone-containing gas are spatially separated such that they do not come into contact with one another. | 06-10-2010 |
20100130012 | Method For Polishing A Semiconductor Wafer With A Strained-Relaxed Si1-xGex Layer - Semiconductor wafer provided with a strain-relaxed layer of Si | 05-27-2010 |
20100104806 | METHOD FOR POLISHING BOTH SIDES OF A SEMICONDUCTOR WAFER - Both sides of a large diameter semiconductor wafer are polished by the following ordered steps:
| 04-29-2010 |
20100099337 | Device For The Double-Sided Processing Of Flat Workpieces and Method For The Simultaneous Double-Sided Material Removal Processing Of A Plurality Of Semiconductor Wafers - A device for double-sided processing of flat workpieces has upper and lower working discs forming between them a working gap containing a carrier disc with cutout(s) for workpiece(s), the carrier disc having circumferential teeth by means of which it rolls on an inner and an outer gear wheel or pin ring, wherein the gear wheels or pin rings have a multiplicity of gear or pin arrangements which engage the teeth of the carrier discs during rolling, at least one of the pin arrangements having a guide which delimits movement of the margin of the carrier disc in at least one axial direction, the guide formed by a circumferential shoulder or a circumferential groove. | 04-22-2010 |
20100089209 | METHOD FOR SIMULTANEOUSLY CUTTING A COMPOUND ROD OF SEMICONDUCTOR MATERIAL INTO A MULTIPLICITY OF WAFERS - A method for simultaneously cutting a compound rod of semiconductor material into a multiplicity of wafers. The method includes selecting a first workpiece and a second workpiece, each having two end surfaces; grinding at least one of the two end surfaces of each workpiece so as to create a ground end surface on each workpiece; cementing the ground end surface of the first workpiece to the ground end surface of second workpiece using a fastener so as to produce a compound rod piece having a longitudinal axis, wherein the fastener is disposed between the workpieces so as create a distance between the workpieces; fixing the compound rod piece in a longitudinal direction on a mounting plate; clamping the mounting plate with the compound rod piece in a wire saw; and cutting the compound rod piece perpendicularly to the longitudinal axis using the wire saw. | 04-15-2010 |
20100064965 | DEVICE FOR PULLING A SINGLE CRYSTAL - A device for pulling a single crystal from a melt having a widened portion between an upper and a lower neck portion including a pulling device having a pulling device cable drum configured to wind a pulling cable, the pulling cable configured to pull the single crystal and a supporting device configured to relieve the upper neck portion of a weight of the single crystal. | 03-18-2010 |
20100059861 | SEMICONDUCTOR WAFER COMPOSED OF MONOCRYSTALLINE SILICON AND METHOD FOR PRODUCING ITo - Semiconductor wafers composed of monocrystalline silicon and doped with nitrogen contain an OSF region and a PV region, wherein the OSF region extends from the center radially toward the edge of the wafer as far as the P | 03-11-2010 |
20100056027 | Method For Polishing A Semiconductor Wafer - Semiconductor wafers are CMP polished by polishing the rear side of the semiconductor wafer by means of CMP with a material removal with a profile along the diameter of the wafer wherein material removal is higher at the center than at the edge of the rear side; and polishing the front side of the wafer by means of CMP with a material removal with a profile along the diameter of the wafer wherein material removal is lower in the center of the front side than in an edge region of the front side. | 03-04-2010 |
20100055908 | METHOD FOR PRODUCING A SEMICONDUCTOR WAFER - A method for producing a semiconductor wafer. The method includes placing the semiconductor wafer in a cutout in a carrier. Both sides of the semiconductor wafer are polished between an upper and a lower polishing plate with a polishing agent until the thickness of the center of the semiconductor wafer is less than the thickness of the carrier and from 10 μm to 30 μm of semiconductor wafer material is removed. The polishing agent contains 0.1 to 0.4% by weight of SiO | 03-04-2010 |
20100047563 | SILICON WAFER AND METHOD FOR MANUFACTURING THE SAME - Silicon wafers wherein slip dislocations and warpages during device production are suppressed, contain BMDs with an octahedral shape, and of BMDs at a depth greater than 50 μm from the surface of the wafer, the density of BMDs with diagonal size of 10 nm to 50 nm is ≧1×10 | 02-25-2010 |
20100037815 | Method For Producing A Single Crystal Of Semiconductor Material - A single crystal of semiconductor material is produced by a method of melting semiconductor material granules by means of a first induction heating coil on a dish with a run-off tube consisting of the semiconductor material, forming a melt of molten granules which extends from the run-off tube in the form of a melt neck and a melt waist to a phase boundary, delivering heat to the melt by means of a second induction heating coil which has an opening through which the melt neck passes, crystallizing the melt at the phase boundary, and delivering a cooling gas to the run-off tube and to the melt neck in order to control the axial position of an interface between the run-off tube and the melt neck. | 02-18-2010 |
20100019278 | Multilayer Structure Comprising A Substrate and A Layer Of Silicon and Germanium Deposited Heteroepitaxially Thereon, and A Process For Producing It - A multilayer structure, comprises a substrate and a layer of silicon and germanium (SiGe layer) deposited heteroepitaxially thereon having the composition Si | 01-28-2010 |
20100015402 | METHOD FOR DEPOSITING A LAYER ON A SEMICONDUCTOR WAFER BY MEANS OF CVD AND CHAMBER FOR CARRYING OUT THE METHOD - A method for depositing a layer on a semiconductor wafer using chemical vapor deposition (CVD). The method includes providing a chamber having an inlet opening and an outlet opening and a channel joining the inlet opening and the outlet opening, wherein the channel is bounded at the bottom by a plane and at the top by a window transmissive to thermal radiation. A semiconductor wafer is disposed so that a surface of the semiconductor lies in the plane, wherein the window has a center region disposed over the semiconductor wafer and an edge region surrounding the center region and not disposed over the semiconductor wafer. A distance between the plane and the window varies across the chamber, the distance being greater at the edge region than at the center region. A tangent applied to a radial profile of the distance at a boundary between the center region and the edge region forms an angle with the plane of not less than 15° and not more than 25°. A deposition gas is conducted through the channel from the gas inlet opening over the semiconductor wafer to the gas outlet opening, wherein a speed at which the deposition gas is conducted varies over the semiconductor wafer according to the varying distance between the plane and the window. | 01-21-2010 |
20090321747 | MULTILAYERED SEMICONDUCTOR WAFER AND PROCESS FOR MANUFACTURING THE SAME - The invention relates to a process for manufacturing a multilayered semiconductor wafer comprising a handle wafer ( | 12-31-2009 |
20090304994 | Epitaxially coated silicon wafer with 110 orientation and method for producing it - An epitaxially coated silicon wafer comprises a plane surface misoriented relative to a {110} crystal plane, wherein the <110> direction of the single silicon crystal is tilted away by the angle θ from the normal to the wafer surface and the projection of the tilted <110> direction forms an angle φ with the direction <−110> in the wafer, and θ is given by 0≦θ≦3° and 45°≦φ≦90°, as well as for all symmetrically equivalent directions. | 12-10-2009 |
20090277376 | Method for producing an epitaxially coated semiconductor wafer - Epitaxially coated semiconductor wafers are prepared by a process in which a semiconductor wafer polished at least on its front side is placed on a susceptor in a single-wafer epitaxy reactor and epitaxially coated on its polished front side at temperatures of 1000-1200° C., wherein, after coating, the semiconductor wafer is cooled in the temperature range from 1200° C. to 900° C. at a rate of less than 5° C. per second. In a second method for producing an epitaxially coated wafer, the wafer is placed on a susceptor in the epitaxy reactor and epitaxially coated on its polished front side at a deposition temperature of 1000-1200° C., and after coating, and while still at the deposition temperature, the wafer is raised for 1-60 seconds to break connections between susceptor and wafer produced by deposited semiconductor material before the wafer is cooled. | 11-12-2009 |
20090261456 | EPITAXIALLY COATED SILICON WAFER AND METHOD FOR PRODUCING EPITAXIALLY COATED SILICON WAFERS - A multiplicity of silicon wafers polished at least on their front sides are provided and successively coated individually in an epitaxy reactor by a procedure whereby one of the wafers is placed on a susceptor in the epitaxy reactor, is pretreated under a hydrogen atmosphere at a first hydrogen flow rate, and with addition of an etching medium to the hydrogen atmosphere at a reduced hydrogen flow rate in a second step, is subsequently coated epitaxially on its polished front side, and removed from the reactor. An etching treatment of the susceptor follows a specific number of epitaxial coatings. Silicon wafers produced thereby have a global flatness value GBIR of 0.07-0.3 μm relative to an edge exclusion of 2 mm. | 10-22-2009 |
20090236696 | Semiconductor Wafer With A Heteroepitaxial Layer and A Method For Producing The Wafer - A multilayer semiconductor wafer has a substrate wafer having a first side and a second side; a fully or partially relaxed heteroepitaxial layer deposited on the first side of the substrate wafer; and a stress compensating layer deposited on the second side of the substrate wafer. The multilayer semiconductor wafer is produced by a method including depositing on a first side of a substrate a fully or partially relaxed heteroepitaxial layer at a deposition temperature; and at the same temperature or before significantly cooling the wafer from the deposition temperature, providing a stress compensating layer on a second side of the substrate. | 09-24-2009 |
20090236695 | Semiconductor Wafer With A Heteroepitaxial Layer And A Method For Producing The Wafer - A multilayer semiconductor wafer has a substrate wafer having a first side and a second side; a fully or partially relaxed heteroepitaxial layer deposited on the first side of the substrate wafer; and a stress compensating layer deposited on the second side of the substrate wafer. The multilayer semiconductor wafer is produced by a method including depositing on a first side of a substrate a fully or partially relaxed heteroepitaxial layer at a deposition temperature; and at the same temperature or before significantly cooling the wafer from the deposition temperature, providing a stress compensating layer on a second side of the substrate. | 09-24-2009 |
20090203297 | Semiconductor Wafer, Apparatus and Process For Producing The Semiconductor Wafer - The invention relates to a process for producing a semiconductor wafer by double-side grinding of the semiconductor wafer, in which the semiconductor wafer is simultaneously ground on both sides, first by rough-grinding and then by finish-grinding, using a grinding tool. The semiconductor wafer, between the rough-grinding and the finish-grinding, remains positioned in the grinding machine, and the grinding tool continues to apply a substantially constant load during the transition from rough-grinding to finish-grinding. The invention also relates to an apparatus for carrying out the process and to a semiconductor wafer having a local flatness value on a front surface of less than 16 nm in a measurement window of 2 mm×2 mm area and of less than 40 nm in a measurement window of 10 mm×10 mm area. | 08-13-2009 |
20090145457 | Method For The Wet-Chemical Treatment Of A Semiconductor Wafer - A method for the wet-chemical treatment of a semiconductor wafer involves: a) rotating a semiconductor wafer; b) applying a cleaning liquid comprising gas bubbles having a diameter of 100 μm or less to the rotating wafer such that a liquid film forms on the wafer; c) exposing the rotating semiconductor wafer to a gas atmosphere containing a reactive gas; and d) removing the liquid film from the wafer. | 06-11-2009 |
20090130960 | Method For Producing A Semiconductor Wafer With A Polished Edge - The invention relates to a method for producing a semiconductor wafer with a polished edge, said method comprising the following steps:
| 05-21-2009 |
20090104852 | Carrier, Method For Coating A Carrier, and Method For The Simultaneous Double-Side Material-Removing Machining Of Semiconductor Wafers - Carriers suitable for receiving one or more semiconductor wafers for the machining thereof in lapping, grinding or polishing machines, comprise a core of a first material which has a high stiffness, the core being completely or partly coated with a second material, and also at least one cutout for receiving a semiconductor wafer, wherein the second material is a thermoset polyurethane elastomer having a Shore A hardness of 20-90. The carriers are preferably coated with the second material after chemical surface activation and application of adhesion promoter, and may be used for simultaneous double-side material-removing machining of a plurality of semiconductor wafers. | 04-23-2009 |
20090104846 | Simultaneous Double-Side Grinding Of Semiconductor Wafers - Correction of grinding spindle positions in double-side grinding machines for the simultaneous double-side machining of semiconductor wafers is achieved by torsionally coupling the two grinding spindles, each comprising a grinding disk flange for receiving a grinding disk, and providing a measuring unit with an inclinometer and two sensors for distance measurement, between the two grinding disk flanges such that the grinding spindles are essentially in the position they would have with mounted grinding disks during the grinding process, wherein the coupled grinding spindles are rotated while inclinometer and sensors determine radial and axial correction values of axial alignment to adjust the grinding spindles to a symmetrical orientation. The spindle positions may be corrected under the action of process forces. | 04-23-2009 |
20090084669 | PROCESS AND APPARATUS FOR PRODUCING A SINGLE CRYSTAL OF SEMICONDUCTOR MATERIAL - A process for producing a single crystal of semiconductor material, in which fractions of a melt, are kept in liquid form by a pulling coil, solidify on a seed crystal to form the growing single crystal, and granules are melted in order to maintain the growth of the single crystal. The melting granules are passed to the melt after a delay. There is also an apparatus which Is suitable for carrying out the process and has a device which delays mixing of the molten granules and of the melt. | 04-02-2009 |
20090071507 | PROCESS FOR CLEANING A SEMICONDUCTOR WAFER - Semiconductor wafers are cleaned by forming a first liquid film on a surface of the semiconductor wafer to be cleaned, the first liquid film containing hydrogen fluoride and ozone; replacing the first liquid film with a second aqueous liquid film which contains hydrogen fluoride and ozone, the concentration of hydrogen fluoride in the second liquid film being lower than in the first liquid film; and removing the second liquid film. | 03-19-2009 |
20090065891 | Semiconductor Substrate And Process For Producing It - A process for producing a semiconductor substrate comprising a carrier wafer and a layer of single-crystalline semiconductor material: | 03-12-2009 |
20090031945 | SINGLE CRYSTAL AND SEMICONDUCTOR WAFER AND APPARATUS AND METHOD FOR PRODUCING A SINGLE CRYSTAL - The disclosure relates to an apparatus and a method for producing a single crystal of semiconductor material. The apparatus comprises a chamber and a crucible which is arranged in the chamber and is enclosed by a crucible heater, a radiation shield for shielding a growing single crystal and thermal insulation between the crucible heater and an inner wall of the chamber. The apparatus may include a resilient seal which seals a gap between the inner wall and the thermal insulation and forms an obstacle for the transport of gaseous iron carbonyls to the single crystal. The disclosure also relates to a method for producing a single crystal of semiconductor material by using the apparatus, the single crystal which is produced and a semiconductor wafer cut therefrom. The single crystal and the semiconductor wafer are distinguished by an edge region, which extends from the circumference to a distance of up to R-5 mm radially into the single crystal or the semiconductor wafer and has an iron concentration, wherein the iron concentration in the edge region is less than 1*10 | 02-05-2009 |
20090029552 | Method For Polishing A Substrate Composed Of Semiconductor Material - Semiconductor material substrates are polished by a method including at least one polishing step A by means of which the substrate is polished on a polishing pad containing an abrasive material bonded in the polishing pad and a polishing agent solution is introduced between the substrate and the polishing pad during the polishing step; and at least one polishing step B by means of which the substrate is polished on a polishing pad containing an abrasive material-containing polishing pad and wherein a polishing agent slurry containing unbonded abrasive material is introduced between the substrate and the polishing pad during the polishing step. | 01-29-2009 |
20090011683 | Method For Grinding Semiconductor Wafers - Semiconductor wafers are processed so as to remove material on one or both sides by means of at least one grinding tool, with coolant supplied into a contact region between the semiconductor wafer and the at least one grinding tool, characterized in that the coolant flow rate is set as a function of a grinding tooth height of the at least one grinding tool and this coolant flow rate is reduced as the grinding tooth height decreases. | 01-08-2009 |
20090007940 | Process For Cleaning A Semiconductor Wafer Using A Cleaning Solution - Semiconductor wafers are cleaned using a cleaning solution containing an alkaline ammonium component in an initial composition, wherein the semiconductor wafer is brought into contact with the cleaning solution in an individual-wafer treatment, and in the course of cleaning hydrogen fluoride is added as further component to the cleaning solution, and the cleaning solution has at the end of cleaning, a composition that differs from the initial composition. | 01-08-2009 |
20080308122 | Process For Cleaning, Drying and Hydrophilizing A Semiconductor Wafer - Semiconductor wafers are cleaned, dried, and hydrophilized the following steps in the order stated:
| 12-18-2008 |
20080305722 | Method for the single-sided polishing of bare semiconductor wafers - Single-sided polishing of bare semiconductor wafers is accomplished by using a polishing head with a membrane made of a resilient material by which polishing pressure is transmitted onto the backside of the semiconductor wafer to be polished, wherein the semiconductor wafer is pressed against a polishing cloth with a smooth surface while supplying a polishing agent, and is prevented from sliding off the membrane by a retainer ring. The retainer ring is provided with channels on a side surface facing the polishing cloth. | 12-11-2008 |
20080302294 | Single Crystal Manufacturing Method - Single crystalline ingots can be stably pulled free from dislocation and with a good crystal shape by actuating a crystal driving unit so as to immerse a seed crystal in a silicon melt, and controlling the crystal driving unit and a crucible driving unit under predetermined conditions so as to pull the seed crystal. During pulling, a horizontal magnetic field positioning device applies a magnetic field in the horizontal direction to the inside of the silicon melt, fixing the magnetic field axis at a constant position from the liquid surface of the melt. Positional adjustment of the vertical position of the horizontal magnetic field is performed in advance by a magnetic field position adjusting device, and the magnetic field axis of the applied field is fixed at a constant distance lower than the liquid surface of the melt by more than 50 mm and at the same level or higher than a depth L from the melt surface at the point of tail-in. | 12-11-2008 |
20080286951 | Semiconductor Wafer With An Epitaxially Deposited Layer, And Process For Producing The Semiconductor Wafer - A semiconductor wafer is formed of a substrate wafer of single crystal silicon doped with dopant atoms of the n type or p type, with a front surface and a back surface, contains a layer deposited epitaxially on the front surface of the substrate wafer. The substrate wafer additionally includes an n | 11-20-2008 |
20080268613 | Semiconductor Substrate And Method For Production Thereof - Hetero-semiconductor structures possessing an SOI structure containing a silicon-germanium mixed crystal are produced at a low cost and high productivity. The semiconductor substrates comprise a first layer formed of silicon having germanium added thereto, a second layer formed of an oxide and adjoined to the first layer, and a third layer derived from the same source as the first layer, but having an enriched content of germanium as a result of thermal oxidation and thinning of the third layer. | 10-30-2008 |
20080265375 | Methods for the single-sided polishing of semiconductor wafers and semiconductor wafer having a relaxed Si1-x GEx Layer - Single-sided polishing of semiconductor wafers provided with a relaxed Si | 10-30-2008 |
20080264228 | Wire Guide Roll For Wire Saw - A wire guide roll for use in wire saws for simultaneously slicing a multiplicity of wafers from a cylindrical workpiece is provided with a coating having a thickness of at least 2 mm and at most 7.5 mm of a material which has a Shore A hardness of at least 60 and at most 99, and which contains a multiplicity of grooves through which the sawing wire is guided, the grooves each having a curved groove base with a radius of curvature which is 0.25-1.6 times the sawing wire diameter, and an aperture angle of 60-130°. A multiplicity of wafers are simultaneously sliced from a cylindrical workpiece by means of a wire saw using such wire guide rolls. | 10-30-2008 |
20080241519 | Semiconductor Wafer and Process For Its Production - A layered semiconductor wafer contains the following layers in the given order:
| 10-02-2008 |
20080233840 | Method For The Simultaneous Grinding Of A Plurality Of Semiconductor Wafers - Simultaneous double-side grinding of a plurality of semiconductor wafers involves positioning each wafer freely in a cutout of one of plural carriers which rotate on a cycloidal trajectory, wherein the wafers are machined between two rotating ring-shaped working disks, each disk having a working layer of bonded abrasive, wherein the form of the working gap between working layers is determined during grinding and the form of the working area of at least one disk is altered such that the gap has a predetermined form. The wafers, during machining, may temporarily overhang the gap. The carrier is optionally composed only of a first material, or is completely or partly coated with the first material such that during machining only the first material contacts the working layer, and the first material does not reduce the machining ability of the working layer. | 09-25-2008 |
20080210155 | SILICON SINGLE CRYSTAL AND PROCESS FOR PRODUCING IT - A silicon single crystal which has been produced using the Czochralski method has a <113> orientation. | 09-04-2008 |